Wafer inspection method and device

Abstract

A wafer inspection method and device. The method comprises maintaining rotation of a wafer (1) and moving a detector (4), so that the detector (4) moves between the edge of the wafer (1) and a position spaced from the edge of the wafer (1) by a first width (W). By detecting a color value of the wafer (1) falling within a detection area of the detector (4), whether a defect exists in the wafer (1) within the detection area is determined. During movement of the detector (4), a movement trajectory of the detection area on the wafer (1) is a spiral path, and the distance in the radial direction of the wafer (1) between two adjacent laps of the spiral path is less than or equal to zero. The wafer (1) inspection method and device can accurately detect whether the wafer (1) has a defect.

Description

Wafer Inspection Methods and Apparatus Technical Field

[0001] This application relates to the field of semiconductor technology, and more specifically, to a wafer inspection method and apparatus. Background Technology

[0002] With the increasing demand for high integration and high performance of VLSI (Very Large Scale Integration), semiconductor technology is developing towards smaller dimensions, and the impact of wafer defects on integrated circuit quality is becoming increasingly significant. Due to limitations in process technology, wafer edges are often regions with high defect rates. Defects at wafer edges can affect the yield of the wafer in multiple processes. For example, edge defects in the wafer seed layer can affect the wafer plating yield, and edge defects during wafer edge washing can affect the yield of the wafer in subsequent processes.

[0003] Existing wafer edge defect detection devices typically sample and inspect at the wafer edge, which cannot accurately detect wafer edge defects and is prone to misjudgment. Therefore, there is an urgent need for a device that accurately detects wafer edges to avoid the problems of reduced yield and increased costs caused by wafer edge defects. Summary of the Invention

[0004] Embodiments of this application provide a wafer inspection device that can accurately detect whether there are defects at the edge of a wafer.

[0005] In a first aspect, this application provides a wafer inspection method, including maintaining a wafer rotation, moving a detector such that the detector moves between the wafer edge and a position at a distance of a first width W from the wafer edge, and determining whether the wafer in the detection area has defects by detecting the color value of the wafer falling into the detection area of ​​the detector; wherein, during the movement of the detector, the movement trajectory of the detection area is spiral on the wafer, and the distance between two adjacent spiral movements in the radial direction of the wafer is less than or equal to zero.

[0006] Specifically, the color value of the wafer within the detection area and the detection position of the detection area are obtained; it is determined whether the color value is within the acceptable data range corresponding to the detection position. If the color value is within the acceptable data range, the wafer within the detection area is determined to be defect-free; if the color value is outside the acceptable data range, the wafer within the detection area is determined to be defective.

[0007] Specifically, the wafer is the wafer after removing the edge film layer with a width L, and the first width W is greater than or equal to the edge width L.

[0008] Specifically, the length of the detection area in the radial direction of the wafer is used as the detection width X, the detection position is the distance D between the detector and the wafer edge. When D ≤ L - X, the qualified data range is equal to the first value A. When L ≤ D ≤ W, the qualified data range is equal to the second value B. When L - X < D < L, the corresponding qualified data range is between the first value A and the second value B.

[0009] Specifically, when L - X < D < L, the qualified data range corresponding to the detection position = (the ratio of the area of the detection area between the wafer edge and the edge removal width L to the area of the detection area * A) + (the ratio of the area of the detection area between the edge removal width L and the first width W to the area of the detection area * B).

[0010] Specifically, the length of the detection area in the radial direction of the wafer is used as the detection width X, the detection position is the distance D between the detector and the wafer edge, and the edge removal width L has a qualified error δ. When D ≤ L - δ - X, the qualified data range is the first value A. When L + δ < D ≤ W, the qualified data range is the second value B. When L - δ - X < D < L + δ, the qualified data range is between A and B.

[0011] Specifically, if X ≤ 2δ, then when L - δ - X < D < L - δ, the qualified data range is between (the ratio of the area of the detection area between the wafer edge and L - δ to the area of the detection area * A) + (the ratio of the area of the detection area between L - δ and L + δ to the area of the detection area * B) and the first value A. When L + δ - X < D < L + δ, the qualified data range is between (the ratio of the area of the detection area between L - δ and L + δ to the area of the detection area * A) + (the ratio of the area of the detection area between L + δ and the first width W to the area of the detection area * B) and the second value B.

[0012] Specifically, if X > 2δ, then when L - δ - X < D < L + δ - X, the qualified data range is between the first value A and (the ratio of the area of the detection area between the wafer edge and L - δ to the area of the detection area * A) + (the ratio of the area of the detection area between L - δ and L + δ to the area of the detection area * B). When L + δ - X ≤ D ≤ L - δ, the qualified data range is between (the ratio of the area of the detection area between the wafer edge and L - δ to the area of the detection area * A) + (the ratio of the area of the detection area between L - δ and L + δ to the area of the detection area * A) + (the ratio of the area of the detection area between L + δ and the first width W to the area of the detection area * B) and (the ratio of the area of the detection area between the wafer edge and L - δ to the area of the detection area * A) + (the ratio of the area of the detection area between L - δ and L + δ to the area of the detection area * B) + (the ratio of the area of the detection area between L + δ and the first width W to the area of the detection area * B). When L - δ < D < L + δ, the qualified data range is between (the ratio of the area of the detection area between L - δ and L + δ to the area of the detection area * A) + (the ratio of the area of the detection area between L + δ and the first width W to the area of the detection area * B) and the second value B.

[0013] Specifically, the wafer detection method further includes moving the detector between a position at a first width W from the wafer edge and the wafer center. When the detection position is at the first width W and the wafer center, the qualified data range is equal to the second value.

[0014] Specifically, the wafer is a coated wafer, the first width W is equal to the wafer radius, the detection position is any position, and the qualified data range is equal to the third value.

[0015] Specifically, if there is a defect in the detection area, mark the detection area and continue the detection.

[0016] Specifically, if there is a defect in the detection area, stop moving the detector and give an alarm.

[0017] Specifically, the detector moves from the wafer edge to the position at a first width W from the wafer edge.

[0018] Specifically, the movement path of the detector is an arc.

[0019] Specifically, the detector moves along the radial direction of the wafer.

[0020] Secondly, this application provides a wafer inspection device, comprising: a rotation unit for rotating a wafer; a detector for detecting the color value of the wafer falling into a detection area of ​​the detector; and a control unit for moving the detector and obtaining the detection position of the detection area of ​​the detector; the wafer inspection device is configured to move the detector by the control unit such that the movement trajectory of the detection area on the wafer is spiral, the distance between two adjacent spiral movements on the wafer in the radial direction is less than or equal to zero, and to determine whether the wafer has defects based on the detection position and the color value.

[0021] Thirdly, this application provides a wafer inspection method, including maintaining wafer rotation, moving a detector to move the detector between the wafer edge and a position at a distance of a first width W from the wafer edge, and determining whether the wafer has defects by detecting the electromagnetic reflectivity of the wafer falling into the detection area of ​​the detector; wherein, during the movement of the detector, the movement trajectory of the detection area is spiral on the wafer, and the distance between two adjacent spiral movements in the radial direction of the wafer is less than or equal to zero.

[0022] The wafer inspection method and apparatus of this application use a movable inspection area to inspect the wafer edge, and restrict the movement trajectory of the inspection area, so that the inspection area can fully inspect the wafer edge and the position at a distance of a first width W from the wafer edge, and obtain more accurate inspection results.

[0023] Other features and advantages of this application will become apparent from the following detailed description, or may be learned in part from practice of this application.

[0024] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit this application.

[0025] Overview of the attached figures

[0026] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. It is obvious that the drawings described below are merely some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort. In the drawings:

[0027] Figure 1 schematically illustrates the structure of a wafer inspection device according to an embodiment of this application;

[0028] Figure 2 schematically illustrates a flowchart of a wafer inspection method according to an embodiment of this application;

[0029] Figure 3 schematically illustrates a flowchart of a method for determining whether a wafer covered by a detection area has defects according to an embodiment of this application;

[0030] Figure 4 schematically illustrates a flowchart of a wafer inspection method according to another embodiment of this application;

[0031] Figure 5 schematically illustrates a flowchart of a wafer inspection method according to another embodiment of this application.

[0032] Preferred embodiments of this application

[0033] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided to make this application more comprehensive and complete, and to fully convey the concept of the exemplary embodiments to those skilled in the art.

[0034] Furthermore, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of this application. However, those skilled in the art will recognize that the technical solutions of this application can be practiced without one or more of the specific details, or other methods, components, apparatuses, steps, etc., can be employed. In other instances, well-known methods, apparatuses, implementations, or operations are not shown or described in detail to avoid obscuring various aspects of this application.

[0035] Please refer to Figure 1. This embodiment provides a wafer inspection device for accurately detecting whether a wafer has defects.

[0036] As shown in Figure 1, the wafer inspection apparatus includes a chuck 2 for carrying a wafer 1, a rotating unit 3 for rotating the chuck 2, and a detector 4. The position on the wafer 1 aligned with the detector 4 is designated as the inspection area, and the detector 4 is used to detect the color value of the wafer covered by the inspection area. The detector 4 is mounted on a robotic arm 5, and the movement of the robotic arm 5 moves the detector 4 to increase its inspection range. The chuck 2 is a vacuum chuck or other chuck that does not obstruct the wafer edge to avoid affecting the inspection results. In other embodiments of this application, the color value can be replaced with electromagnetic reflectivity.

[0037] The wafer inspection device also includes a controller. The rotating unit 3 and the robotic arm 5 are both electrically connected to the controller. The controller sends a movement signal to the robotic arm 5 based on the rotational speed of the rotating unit 3 to control the movement speed of the inspection area. The controller is electrically connected to the detector 4 to obtain the color value of the wafer detected by the detector 4. The controller can also determine the inspection position of the inspection area based on the position of the robotic arm 5, so that the controller can obtain the corresponding acceptable data range based on the inspection position. The controller is also electrically connected to an alarm. If the controller determines that the color value of the wafer in the inspection area is not within the acceptable data range, it determines that the material of the wafer in the inspection area is inconsistent with the set material, thus determining that the wafer in the inspection area is defective, and the controller activates the alarm.

[0038] During the detection process by detector 4, the rotating unit 3 keeps the rotating wafer 1 in motion, while the robotic arm 5 continuously moves detector 4 so that it moves from the edge of the wafer along an arc to a position a first width W away from the edge of the wafer. The movement trajectory of the detection area is spiral-shaped on the wafer, and the distance between two adjacent spiral rotations in the radial direction of the wafer is less than or equal to zero. This ensures that when detector 4 moves from the edge of the wafer to the position a first width W away from the edge, all wafers from the edge of the wafer to the position a first width W away from the edge are detected by detector 4.

[0039] In other embodiments of this application, the robotic arm 5 may be replaced by a moving frame or other moving mechanism. In other embodiments of this application, the robotic arm 5 moves the detector 4 in a straight line. In other embodiments of this application, the detector 4 moves from a position at a distance of a first width W from the wafer edge to the wafer edge.

[0040] As shown in Figure 2, this embodiment also provides a wafer inspection method, executed by the aforementioned wafer inspection device, which can accurately detect whether there are processing defects on the wafer. The wafer inspection method includes the following steps:

[0041] S110: Keep the wafer rotating.

[0042] After processing the high-speed rotating wafer, its rotation is maintained during the deceleration process. For example, after removing the edge coating layer from a high-speed rotating coated wafer, the wafer is decelerated and inspected during this deceleration process to save time. In other embodiments of this application, the wafer is inspected during the deceleration process after coating on the high-speed rotating wafer. In other embodiments of this application, the wafer is not rotated or rotates at a low speed before inspection, and its high-speed or low-speed rotation is maintained during inspection.

[0043] S120: Continuously move detector 4 so that detector 4 moves from the edge of the wafer to a position at a distance of a first width W from the edge of the wafer. Determine whether there is a defect in the wafer by detecting the color value of the wafer covered by the detection area. The movement trajectory of the detection area is a spiral movement trajectory on the wafer. During the movement of the detection area, the distance between two adjacent loops of the movement trajectory in the radial direction of the wafer is less than or equal to zero.

[0044] The first width W is set according to process requirements. For example, when detecting defects in the process of removing the edge film layer from a coated wafer, if the set edge removal width L is 2.5mm and the allowable acceptance error is ±0.2mm, then the first width W is determined to be 3mm. The range of 2.3-2.7mm from the wafer edge is considered the boundary range allowing the film edge to appear. The first width W is slightly wider than the edge removal width L, enabling more accurate detection of whether the edge removal is acceptable. In other embodiments of this application, the detector 4 is moved from a position of the first width W from the wafer edge to the wafer edge.

[0045] The detector 4 moves along an arc-shaped path. By adjusting the wafer rotation speed or the moving speed of the detector 4, the distance between two adjacent rotation trajectories in the radial direction of the detection area is less than or equal to zero. In other embodiments of this application, the detector 4 moves along the radial direction of the wafer, and the moving path of the detector 4 is a straight line. The wafer inspection device also includes a housing, and the moving path of the detector 4 refers to the moving path of the detector 4 relative to the housing.

[0046] In this embodiment, by comparing the color value of the wafer covered by the detection area with the acceptable data range, it is determined whether the material of the wafer falling within the detection area is an ideal material, thereby determining whether the wafer covered by the detection area has defects. Furthermore, this embodiment moves the detector while rotating the wafer. By controlling the movement path of the detection area, the detector moves from the wafer edge to a position a first width W away from the wafer edge, fully covering the area from the wafer edge to the first width W away from the wafer edge, thus obtaining more accurate detection results.

[0047] In step S120, the detector is used to detect the color value of the wafer covered by the detection area to determine whether there is a defect in the wafer covered by the detection area, as shown in Figure 3. The process specifically includes the following steps:

[0048] S121: Obtain the color value of the wafer covered by the detection area and the detection position of the detection area;

[0049] S122: Determine whether the color value of the wafer covered by the detection area is within the qualified data range corresponding to the detection position. If the color value of the wafer covered by the detection area is within the qualified data range, it is determined that the wafer covered by the detection area is defect-free. If the color value of the wafer covered by the detection area is outside the qualified data range, it is determined that the wafer covered by the detection area is defective.

[0050] In this embodiment, when the wafers falling into the detection area are made of different materials, the color values ​​output by the detector are different. Therefore, the material of the wafers falling into the detection area can be determined by the color value of the wafers covered by the detection area, and thus the presence or absence of defects in the wafers can be determined based on the material of the wafers.

[0051] When the wafer covered by the detection area is entirely made of the first material, the color value detected by the detector is a first value A. For example, if the first material is silicon, the first value can be 100 or another value. When the wafer covered by the detection area is entirely made of the second material, the color value detected by the detector is a second value B. For example, if the second material is copper, the second value can be 200 or another value. When the detection area covers both the first and second materials, the color value detected by the detector for the wafer covered by the detection area is between the first value A and the second value B. The first and second values ​​are set according to process requirements.

[0052] Furthermore, when the detection area covers both the first and second materials, the detector determines the color value based on the area ratio of the first and second materials within the detection area, thereby more accurately determining whether the wafer falling into the detection area has defects. That is, color value = area ratio of the first material * first value A + area ratio of the second material * second value B. For example, if the detection area is covered by silicon and copper materials, each occupying 50% of the area, then the color value detected by the detector = 100 * 50% + 200 * 50%.

[0053] The qualified data range corresponding to the detection position in the detection area is set in advance. The detection position is the distance D between the detector and the wafer edge. When detecting whether there are defects in the process of removing the film layer from the edge of the coated wafer, when the detection position is between the wafer edge and the deburring width L, the ideal material of the wafer falling into the detection area is silicon material, and the qualified data range corresponding to the silicon material is the first value A. When the detection position is between the wafer center and the deburring width L, the ideal material falling into the detection area is the film layer material such as copper material, and the qualified data range corresponding to the film layer material is the second value B. The qualified data range corresponding to the detection position covering the film layer boundary is between the first value A and the second value B. That is, taking the length of the detection area in the radial direction of the wafer as the detection width X, when D ≤ L - X, the qualified data range is the first value A, when L ≤ D ≤ W, the qualified data range is the second value B, and when L - X < D < L, the corresponding qualified data range is between the first value A and the second value B. Among them, when L - X < D < L, the qualified data range corresponding to the detection position is determined according to the area ratio of the silicon material and the film layer material. That is, when L - X < D < L, the qualified data range corresponding to the detection position = (the area ratio of the detection area between the wafer edge and the deburring width L to the detection area * A) + (the area ratio of the detection area between the deburring width L and the first width W to the detection area * B).

[0054] Furthermore, the deburring width L has a qualified error δ, that is, the film layer boundary is allowed to appear within the range of L ± δ. When D ≤ L - δ - X, the qualified data range is the first value A, when L + δ < D ≤ W, the qualified data range is the second value B, and when L - δ - X < D < L + δ, the qualified data range is between A and B.

[0055] If X ≤ 2δ, then when L - δ - X < D < L - δ, the qualified data range is between (the area ratio of the detection area between the wafer edge and L - δ to the detection area * A) + (the area ratio of the detection area between L - δ and L + δ to the detection area * B) and the first value A, and when L + δ - X < D < L + δ, the qualified data range is between (the area ratio of the detection area between L - δ and L + δ to the detection area * A) + (the area ratio of the detection area between L + δ and the first width W to the detection area * B) and the second value B.

[0056] If X > 2δ, then when L - δ - X < D < L + δ - X, the qualified data range is between the first value A and (the ratio of the area of the detection area between the wafer edge and L - δ to the area of the detection area * A) + (the ratio of the area of the detection area between L - δ and L + δ to the area of the detection area * B). When L + δ - X ≤ D ≤ L - δ, the qualified data range is between (the ratio of the area of the detection area between the wafer edge and L - δ to the area of the detection area * A) + (the ratio of the area of the detection area between L - δ and L + δ to the area of the detection area * A) + (the ratio of the area of the detection area between L + δ and the first width W to the area of the detection area * B) and (the ratio of the area of the detection area between the wafer edge and L - δ to the area of the detection area * A) + (the ratio of the area of the detection area between L - δ and L + δ to the area of the detection area * B) + (the ratio of the area of the detection area between L + δ and the first width W to the area of the detection area * B). When L - δ < D < L + δ, the qualified data range is between (the ratio of the area of the detection area between L - δ and L + δ to the area of the detection area * A) + (the ratio of the area of the detection area between L + δ and the first width W to the area of the detection area * B) and the second value B.

[0057] For example, when detecting whether there are defects in the process of removing the edge film layer of a coated wafer, if the set edge removal width L is 2.5 mm and the allowed qualified error is ±0.2 mm, if the detection position is within a range greater than 2.7 mm from the wafer edge width, then the detection area should be all film layer materials, and the film layer material can be copper material, and the qualified data range of the detection area can be 200. If the detection area is within a range of 0 - 2.3 mm from the wafer edge width, then the detection area should be all silicon materials, and the qualified data range of the detection area can be 100. If the detection area is within a range of 2.3 - 2.7 mm from the wafer edge width, then silicon materials and copper materials are allowed to appear in the detection area, and the qualified data range of the detection area is 100 - 200. If half of the detection area is within a range of 2.3 - 2.7 mm from the wafer edge width, and the other half of the detection area is within a range of 0 - 2.3 mm, then the qualified data range of the detection area is from (0.5 * 100 + 0.5 * 100) to (0.5 * 200 + 0.5 * 100), that is, 100 - 150. If half of the detection area is within a range of 2.3 - 2.7 mm from the wafer edge width, and the other half of the detection area is within a range greater than 2.7 mm, then the qualified data range of the detection area is within (0.5 * 100 + 0.5 * 200) to (0.5 * 200 + 0.5 * 200), that is, 150 - 200.

[0058] In step S120, if the detector determines that a defect has occurred in the detection area during the process of the detection area moving from the wafer edge to a position a first width W away from the wafer edge, the detection area is marked as the defect location and the detection continues. In other embodiments of this application, in step S120, if the detector determines that a defect has occurred in the detection area during the process of the detection area moving from the wafer edge to a position a first width away from the wafer edge, an alarm is triggered and the detection ends.

[0059] There are one or more detectors, and each detector has one or more detection areas. When there are multiple detection areas, multiple locations in the edge region can be detected simultaneously. For any given detection area, the steps in Figure 2 are performed. Repeated detection of the wafer across multiple detection areas improves detection accuracy.

[0060] As shown in Figure 4, this embodiment also provides a wafer inspection method. Following step S120 in Figure 2, it further includes step S130: continuing to move the detector so that it moves from a position at a distance of a first width W from the wafer edge to the wafer center. When the detection position is between the first width W and the wafer center, the acceptable data range is a second value. The first width W is less than the wafer radius. In this embodiment, the detector detects the position from the wafer edge to a position at a distance of the first width W from the wafer edge, and then detects the position from the first width W from the wafer edge to the wafer center, to achieve full wafer inspection and obtain more accurate detection results. In other embodiments, the detector is moved from the wafer center to a position at a distance of the first width W from the wafer edge, and then the detector is moved from a position at a distance of the first width W from the wafer edge back to the wafer center.

[0061] When using the above wafer inspection method to detect defects in the coating layer of a coated wafer, the first width W is the wafer radius, the position of the first width W from the wafer edge is the wafer center, the inspection position is arbitrary, and the acceptable data range is the third value, which is set according to process requirements. For example, if the coating layer is copper, the acceptable data range for any position can be 200.

[0062] As shown in Figure 5, this embodiment also provides a wafer inspection method, executed by the aforementioned wafer inspection device, which can accurately detect whether there are processing defects on the wafer. The wafer inspection method includes the following steps:

[0063] S210: Keep the wafer rotating;

[0064] S220: The detector is continuously moved so that the detection area of ​​the detector moves from the edge of the wafer to a position at a distance of a first width W from the edge of the wafer. The electromagnetic reflectivity of the wafer falling into the detection area is detected to determine whether there is a defect in the wafer. The detection area moves in a spiral motion on the wafer, and the distance between two adjacent rotations of the detection area in the radial direction of the wafer is less than or equal to zero.

[0065] Because different materials have varying degrees of electromagnetic reflection, the material of the wafer in the detection area can be distinguished by its electromagnetic reflectivity. For example, if the wafer in the detection area is entirely made of silicon, the detector will detect an electromagnetic reflectivity of 50%. If the detection area is entirely made of copper, the detector will detect an electromagnetic reflectivity of 100%. When the detection area contains both silicon and copper, the detector determines the electromagnetic reflectivity of the detection area based on the area ratio of silicon and copper, in which case the electromagnetic reflectivity will be between 50% and 100%.

[0066] In step S220, the electromagnetic reflectivity of the detection area is detected to determine whether a defect exists in the detection area. This includes comparing the electromagnetic reflectivity of the wafer in the detection area with the acceptable electromagnetic range corresponding to the detection location. If the electromagnetic reflectivity of the detection area is within the acceptable electromagnetic range corresponding to the detection location, the detection area is determined to be defect-free. If the electromagnetic reflectivity of the detection area is outside the acceptable electromagnetic range corresponding to the detection location, the detection area is determined to be defective. The method for determining the acceptable electromagnetic range is the same as described above and will not be repeated here.

[0067] This implementation method compares the electromagnetic reflectivity of the wafer within the detection area with the acceptable electromagnetic range to determine whether the material in the detection area is ideal, thereby determining whether there are defects in the detection area.

[0068] Other embodiments of this application will readily occur to those skilled in the art upon consideration of the specification and practice of the embodiments disclosed herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein.

[0069] It should be understood that this application is not limited to the precise structure described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this application is limited only by the appended claims.

Claims

1. A wafer inspection method, characterized in that, Including: Keep the wafer rotating; Move the detector so that the detector moves between the wafer edge and a position at a first width W away from the wafer edge, and determine whether there is a defect in the wafer within the detection area of the detector by detecting the color value of the wafer falling within the detection area of the detector; Wherein, during the movement of the detector, the movement trajectory of the detection area on the wafer is spiral, and the distance between adjacent two turns of the spiral movement trajectory in the radial direction of the wafer is less than or equal to zero.

2. The wafer inspection method according to claim 1, characterized in that, The step of determining whether there is a defect in the wafer within the detection area of the detector by detecting the color value of the wafer falling within the detection area of the detector includes: Obtain the color value of the wafer within the detection area and the detection position of the detection area; Judge whether the color value is within the qualified data range corresponding to the detection position. If the color value is within the qualified data range, it is determined that there is no defect in the wafer within the detection area. If the color value is outside the qualified data range, it is determined that there is a defect in the wafer within the detection area.

3. The wafer inspection method according to claim 2, characterized in that, The wafer is a wafer after removing the edge film layer with an edge removal width L, and the first width W is greater than or equal to the edge removal width L.

4. The wafer inspection method according to claim 3, characterized in that, Taking the length of the detection area in the radial direction of the wafer as the detection width X, the detection position is the distance D between the detector and the wafer edge. When D ≤ L - X, the qualified data range is equal to the first value A. When L ≤ D ≤ W, the qualified data range is equal to the second value B. When L - X < D < L, the corresponding qualified data range is between the first value A and the second value B.

5. The wafer inspection method according to claim 4, characterized in that, When L - X < D < L, the qualified data range corresponding to the detection position = (the area ratio of the detection area between the wafer edge and the edge removal width L to the area of the detection area * A) + (the area ratio of the detection area between the edge removal width L and the first width W to the area of the detection area * B).

6. The wafer inspection method according to claim 3, characterized in that, Taking the length of the detection area in the radial direction of the wafer as the detection width X, the detection position is the distance D between the detector and the wafer edge, and the edge removal width L has a qualified error δ. When D ≤ L - δ - X, the qualified data range is equal to the first value A. When L + δ < D ≤ W, the qualified data range is equal to the second value B. When L - δ - X < D < L + δ, the qualified data range is between A and B.

7. The wafer inspection method according to claim 6, characterized in that, If X ≤ 2δ, then when L - δ - X < D < L - δ, the qualified data range is between (the area ratio of the detection area between the wafer edge and L - δ to the area of the detection area * A) + (the area ratio of the detection area between L - δ and L + δ to the area of the detection area * B) and the first value A. When L + δ - X < D < L + δ, the qualified data range is between (the area ratio of the detection area between L - δ and L + δ to the area of the detection area * A) + (the area ratio of the detection area between L + δ and the first width W to the area of the detection area * B) and the second value B.

8. The wafer inspection method according to claim 6, characterized in that, If X > 2δ, then when L - δ - X < D < L + δ - X, the qualified data range is between the first value A and (the ratio of the area of the detection area between the wafer edge and L - δ to the area of the detection area * A) + (the ratio of the area of the detection area between L - δ and L + δ to the area of the detection area * B). When L + δ - X ≤ D ≤ L - δ, the qualified data range is between (the ratio of the area of the detection area between the wafer edge and L - δ to the area of the detection area * A) + (the ratio of the area of the detection area between L - δ and L + δ to the area of the detection area * A) + (the ratio of the area of the detection area between L + δ and the first width W to the area of the detection area * B) and (the ratio of the area of the detection area between the wafer edge and L - δ to the area of the detection area * A) + (the ratio of the area of the detection area between L - δ and L + δ to the area of the detection area * B) + (the ratio of the area of the detection area between L + δ and the first width W to the area of the detection area * B). When L - δ < D < L + δ, the qualified data range is between (the ratio of the area of the detection area between L - δ and L + δ to the area of the detection area * A) + (the ratio of the area of the detection area between L + δ and the first width W to the area of the detection area * B) and the second value B.

9. The wafer inspection method according to claim 3, characterized in that, The wafer detection method further includes moving the detector between a position at a first width W from the wafer edge and the wafer center. When the detection position is at the first width W and the wafer center, the qualified data range is equal to the second value.

10. The wafer inspection method according to claim 2, characterized in that, The wafer is a coated wafer, the first width W is equal to the wafer radius, the detection position is any position, and the qualified data range is equal to the third value.

11. The wafer inspection method according to claim 1, characterized in that, If there is a defect in the detection area, mark the detection area and continue the detection.

12. The wafer inspection method according to claim 1, characterized in that, If there is a defect in the detection area, stop moving the detector and give an alarm.

13. The wafer inspection method according to claim 1, characterized in that, The detector moves from the wafer edge to a position at a first width W from the wafer edge.

14. The wafer inspection method according to claim 13, characterized in that, The movement path of the detector is an arc.

15. The wafer inspection method according to claim 13, characterized in that, The detector moves along the radial direction of the wafer.

16. A wafer inspection device, characterized in that, Includes: A rotation unit for rotating the wafer; A detector for detecting the color value of the wafer falling into the detection area of the detector; A control unit for moving the detector and obtaining the detection position where the detection area of the detector is located; The wafer detection device is configured to move the detector through the control unit so that the movement trajectory of the detection area on the wafer is spiral, the distance between adjacent two turns of the spiral movement trajectory in the radial direction of the wafer is less than or equal to zero, and determine whether the wafer is defective according to the detection position and the color value.

17. A wafer inspection method, characterized in that, The method includes: Keep the wafer rotating; Move the detector so that the detector moves between the wafer edge and a position at a first width W from the wafer edge, and determine whether the wafer is defective by detecting the electromagnetic reflectivity of the wafer falling into the detection area of the detector; Wherein, during the movement of the detector, the movement trajectory of the detection area on the wafer is spiral, and the distance between adjacent two turns of the spiral movement trajectory in the radial direction of the wafer is less than or equal to zero.

Images