P-type gallium oxide and preparation method for p-type gallium oxide

Abstract

A P-type gallium oxide and a preparation method for a P-type gallium oxide. The preparation method for a P-type gallium oxide comprises: providing a substrate, the material of which comprises β-gallium oxide; and co-doping the substrate with a shallow-level acceptor impurity and a deep-level acceptor impurity, wherein the shallow-level acceptor impurity and oxygen are congeners. During co-doping with the deep-level acceptor impurity and the shallow-level acceptor impurity, a deep-level acceptor of the deep-level acceptor impurity can work in conjunction with the acceptor level of the shallow-level acceptor impurity to further shift the Fermi level upward toward the valence band maximum, and the combination effect substantially improves the stability of the P-type electrical conductivity of the β-gallium oxide.

Description

p-type gallium oxide and its preparation method Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a P-type gallium oxide and a method for preparing P-type gallium oxide. Background Technology

[0002] β-gallium oxide (β-Ga₂O₃) possesses a wider bandgap, higher breakdown field strength, and can be grown into high-quality, large-size single crystals, making it a promising candidate for high-power devices. However, the relatively flat valence band, large effective mass, ease of self-trapped hole formation, and self-compensation effect of β-gallium oxide (β-Ga₂O₃) make it difficult to achieve stable p-type doping, thus limiting its application in practical devices. Summary of the Invention

[0003] Therefore, it is necessary to address the problem that β-gallium oxide (β-Ga2O3) is difficult to achieve stable P-type doping, which limits its application in practical devices, and to provide a method for preparing P-type gallium oxide.

[0004] According to a first aspect of this application, a method for preparing p-type gallium oxide is provided, comprising:

[0005] A substrate is provided, the substrate being made of a material including β-gallium oxide;

[0006] Co-doping of shallow-level acceptor impurities and deep-level acceptor impurities is formed on the substrate;

[0007] The shallow-level acceptor impurity and oxygen are elements from the same group.

[0008] In one embodiment, the shallow-level acceptor impurity is selenium, sulfur, or tellurium.

[0009] In one embodiment, the deep-level acceptor impurity is magnesium, beryllium, or calcium.

[0010] In one embodiment, the co-doping of shallow-level acceptor impurities and deep-level acceptor impurities on the substrate specifically includes: forming the co-doping of shallow-level acceptor impurities and deep-level acceptor impurities on the substrate by means of ion implantation.

[0011] The ion implantation dose of the shallow-level acceptor impurity is a, and the ion implantation dose of the deep-level acceptor impurity is b, with the ratio of a to b being 0.9-1.1.

[0012] In one embodiment, the ion implantation dose of the shallow-level acceptor impurity is 1 × 10⁻⁶. 16 ions / cm2 Up to 1×10 17 ions / cm 2 The ion implantation dose of the deep-level acceptor impurity is 1×10⁻⁶. 16 ions / cm 2 Up to 1×10 17 ions / cm 2 .

[0013] In one embodiment, the ion implantation energy of the shallow-level acceptor impurity is 10 kV-200 kV;

[0014] The ion implantation energy of the deep-level acceptor impurity is 10 kV-200 kV.

[0015] In one embodiment, the ion implantation energy of the shallow-level acceptor impurity is ckv, the ion implantation energy of the deep-level acceptor impurity is dkv, and the ratio of c to d is 2-3.

[0016] In one embodiment, the method for preparing p-type gallium oxide further includes annealing the substrate in an oxygen environment to activate the shallow-level acceptor impurities and the deep-level acceptor impurities.

[0017] In one embodiment, in the annealing process of the substrate to activate the shallow-level acceptor impurities and the deep-level acceptor impurities, the annealing time is 1 min to 5 min and the annealing temperature is 500℃ to 900℃.

[0018] According to a second aspect of this application, a P-type gallium oxide is provided, which is prepared using the preparation method of P-type gallium oxide of any of the above embodiments.

[0019] In the technical solution of this application, when shallow-level acceptor impurities are incorporated into the lattice of β-Ga₂O₃, acceptor levels are introduced near the top of the valence band. Since the shallow-level acceptor impurities and oxygen are in the same group, these acceptor levels are mainly composed of the 4s orbitals of the shallow-level acceptor impurities, effectively approaching the top of the valence band. This lowers the Fermi level, bringing it closer to the top of the valence band, providing potential acceptor levels for P-type conduction in the substrate. Furthermore, deep-level acceptor impurities are also incorporated into the substrate, forming deep-level acceptor defects. Although a single deep-level acceptor impurity may not be sufficient to form stable P-type conduction, when deep-level and shallow-level acceptor impurities are co-doped, the deep-level acceptors of the deep-level acceptor impurities can combine with the acceptor levels of the shallow-level acceptor impurities, further pushing the Fermi level towards the top of the valence band. This combination effect significantly improves the stability of β-gallium oxide P-type conduction. Attached Figure Description

[0020] Figure 1 shows a comparison of the doping concentration and electrical properties of shallow-level acceptor impurities and deep-level acceptor impurities at different ion implantation doses.

[0021] Figures 2 to 5 show the secondary ion mass spectra of shallow-level acceptor impurities and deep-level acceptor impurities at different ion implantation doses.

[0022] Figure 6 shows the simulated curves of the doping concentration of shallow-level acceptor impurities as a function of the doping depth of shallow-level acceptor impurities and the simulated curves of the doping concentration of deep-level acceptor impurities as a function of the doping depth of deep-level acceptor impurities.

[0023] Figure 7 shows the current-voltage curves of the blank sample and the p-type gallium oxide of this application.

[0024] Figure 8 shows a comparison table of the electrical properties of the blank sample and P-type gallium oxide. Detailed Implementation

[0025] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0026] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0027] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0028] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0029] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0030] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0031] One embodiment of this application provides a method for preparing p-type gallium oxide, comprising the following steps:

[0032] S10, Provide a substrate, the material of which includes β-gallium oxide.

[0033] Specifically, the substrate can be an undoped β-gallium oxide (β-Ga2O3) single crystal as the base material, with dimensions of 10×10 mm. 2 The substrate has a thickness of 0.5 mm and can be prepared using the guided growth method (EFG).

[0034] S20. Co-doping of shallow-level acceptor impurities and deep-level acceptor impurities is formed on the substrate. The shallow-level acceptor impurities are elements in the same group as oxygen. The shallow-level acceptor impurities are used to introduce acceptor levels into the substrate, and the deep-level acceptor impurities are used to introduce deep-level acceptor defects into the substrate.

[0035] Co-doping of shallow-level acceptor impurities and deep-level acceptor impurities can be formed on the substrate by ion implantation, or by epitaxial growth, such as by growing gallium selenide oxide and gallium magnesium oxide using molecular beam epitaxy (MBE) or vapor phase epitaxy (VPE).

[0036] From the properties of gallium oxide itself, gallium oxide has a flat valence band, low top dispersion, large effective mass, and high density of states, which easily leads to free holes being trapped by local lattice distortion, forming self-trapped holes, thus making it difficult to form p-type doping. When shallow-level acceptor impurities are incorporated into the lattice of β-Ga₂O₃, acceptor levels are introduced near the top of the valence band. Since the shallow-level acceptor impurities and oxygen are in the same group, these acceptor levels are mainly composed of the 4s orbitals of the shallow-level acceptor impurities, which can effectively approach the top of the valence band, thereby lowering the Fermi level and bringing it closer to the top of the valence band. This provides potential acceptor levels for p-type conductivity of the substrate. In addition, deep-level acceptor impurities are also doped into the substrate to form deep-level acceptor defects. Although a single deep-level acceptor impurity may not be enough to form a stable P-type conduction, when deep-level acceptor impurities are co-doped with shallow-level acceptor impurities, the deep-level acceptors of the deep-level acceptor impurities can combine with the acceptor levels of the shallow-level acceptor impurities, further pushing the Fermi level to the top of the valence band. This combination effect significantly improves the stability of β-gallium oxide P-type conduction.

[0037] In some embodiments, the shallow-level acceptor impurity is selenium, sulfur, or tellurium.

[0038] Selenium, sulfur, and tellurium are all elements in the same group as oxygen. Therefore, when shallow-level acceptor impurities are incorporated into the lattice of β-Ga2O3, acceptor levels are introduced near the top of the valence band. These acceptor levels are mainly composed of the 4s orbitals of selenium, sulfur, or tellurium ions, which can effectively approach the top of the valence band, thereby reducing the Fermi level and making it closer to the top of the valence band. This provides potential acceptor levels for the P-type conductivity of the substrate.

[0039] In some embodiments, the deep-level acceptor impurity is magnesium, beryllium, or calcium.

[0040] Magnesium ions, beryllium ions, or calcium ions can all form deep-level acceptor defects. When deep-level acceptor impurities are co-doped with shallow-level acceptor impurities, the deep-level acceptor of the shallow-level acceptor impurity can combine with the acceptor level of the shallow-level acceptor impurity, further pushing the Fermi level to the top of the valence band. This combination effect significantly improves the stability of β-gallium oxide P-type conductivity.

[0041] In some embodiments, co-doping of shallow-level acceptor impurities and deep-level acceptor impurities is formed on the substrate, specifically including: forming co-doping of shallow-level acceptor impurities and deep-level acceptor impurities on the substrate by ion implantation. The ion implantation dose of the shallow-level acceptor impurity is a, the ion implantation dose of the shallow-level acceptor impurity is b, and the ratio of a to b is 0.9-1.1.

[0042] For example, the ratio of a to b is 0.9, 1, or 1.1.

[0043] In other words, the ion implantation dose of shallow-level acceptor impurities tends to be equal to that of deep-level acceptor impurities, which is beneficial to improving the uniformity of co-doping. This allows the deep-level acceptors of shallow-level acceptor impurities to better combine with the acceptor levels of shallow-level acceptor impurities, thereby better improving the stability of β-gallium oxide P-type conductivity.

[0044] In some embodiments, the ion implantation dose of the shallow-level acceptor impurity is 1 × 10⁻⁶. 16 ions / cm 2 Up to 1×10 17 ions / cm 2 The ion implantation dose of the deep-level acceptor impurity is 1×10⁻⁶. 16 ions / cm 2 Up to 1×10 17 ions / cm 2 .

[0045] For example, the ion implantation dose of the shallow-level acceptor impurity is 1 × 10⁻⁶. 16 ions / cm 2 5×10 16 ions / cm 2 Or 1×10 17 ions / cm 2 .

[0046] For example, the ion implantation dose of the deep-level acceptor impurity is 1 × 10⁻⁶. 16 ions / cm 2 5×10 16 ions / cm 2 Or 1×10 17 ions / cm 2 .

[0047] Please refer to Figures 1 to 5. Figure 1 shows a comparison table of peak doping concentration and electrical properties of shallow-level acceptor impurities and deep-level acceptor impurities at different ion implantation doses. Figures 2 to 5 show the secondary ion mass spectra of shallow-level acceptor impurities and deep-level acceptor impurities at different ion implantation doses.

[0048] In Figures 2 to 5, selenium was selected as the shallow-level acceptor impurity and magnesium was selected as the deep-level acceptor impurity. In Figure 2, L11 and L12 represent the ion implantation doses of 1×10⁻⁶ for both the shallow-level and deep-level acceptor impurities. 15 ions / cm 2 Figure 3 shows the doping concentration of the shallow-level acceptor impurity versus its doping depth, and the doping concentration of the deep-level acceptor impurity versus its doping depth, respectively. In Figure 3, L21 and L22 represent the doping concentrations of the shallow-level and deep-level acceptor impurities, respectively, when the ion implantation doses are both 1×10⁻⁶. 16 ions / cm 2 Figure 4 shows the curves illustrating the variation of doping concentration of shallow-level acceptor impurities with doping depth, and the curves illustrating the variation of doping concentration of deep-level acceptor impurities with doping depth. In Figure 4, L31 and L32 represent the doping concentrations of shallow-level and deep-level acceptor impurities, respectively, when the ion implantation doses are both 5 × 10⁻⁶. 16 ions / cm 2 Figure 4 shows the curves illustrating the variation of doping concentration of shallow-level acceptor impurities with doping depth, and the variation of doping concentration of deep-level acceptor impurities with doping depth, respectively. In Figure 4, L41 and L42 represent the doping concentrations of shallow-level and deep-level acceptor impurities, respectively, when the ion implantation doses are both 1×10⁻⁶. 17 ions / cm 2 In the case of [condition], the curves showing the variation of the doping concentration of shallow-level acceptor impurities with the doping depth of shallow-level acceptor impurities, and the curves showing the variation of the doping concentration of deep-level acceptor impurities with the doping depth of deep-level acceptor impurities.

[0049] As shown in Figures 1 to 5, the ion implantation dose for both undoped substrates and shallow-level acceptor impurities and deep-level acceptor impurities is 1 × 10⁻⁶. 15 ions / cm 2 In the case of [unclear context], gallium oxide exhibits poor electrical performance. However, when the ion implantation dose of the shallow-level acceptor impurity is selected as 1×10 [unclear context], [unclear context]. 16 ions / cm 2 Up to 1×10 17 ions / cm 2 Furthermore, the ion implantation dose of the deep-level acceptor impurity was selected as 1×10⁻⁶. 16 ions / cm 2 Up to 1×10 17 ions / cm 2 At the same time, the P-type gallium oxide prepared by the method of this application has better electrical properties.

[0050] Of course, SRIM software can also be used to simulate the doping of shallow-level acceptor impurities so that appropriate ion implantation doses can be selected for both shallow-level and deep-level acceptor impurities.

[0051] In some embodiments, the ion implantation energy of shallow-level acceptor impurities is 10 kV-200 kV, and the ion implantation energy of deep-level acceptor impurities is 10 kV-200 kV.

[0052] For example, the ion implantation energy of shallow-level acceptor impurities is 10 kV, 50 kV, 60 kV, 90 kV, 100 kV, 150 kV, or 200 kV. For example, the ion implantation energy of deep-level acceptor impurities is 10 kV, 20 kV, 30 kV, 40 kV, 50 kV, 60 kV, 70 kV, 80 kV, 90 kV, 100 kV, 120 kV, 140 kV, 160 kV, 180 kV, or 200 kV.

[0053] Thus, selecting the ion implantation energy of shallow-level acceptor impurities and deep-level acceptor impurities within an appropriate range is beneficial for the shallow-level and deep-level acceptor impurities to be implanted into the substrate at a predetermined depth. This, in turn, helps to optimize the doping positions of shallow-level and deep-level acceptor impurities and improves the uniformity and effectiveness of doping.

[0054] In some embodiments, the ion implantation energy of the shallow-level acceptor impurity is ckv, the ion implantation energy of the deep-level acceptor impurity is dkv, and the ratio of c to d is 2-3.

[0055] For example, the ratio of c to d is 2, 2.5, or 3.

[0056] For example, the ion implantation energy for shallow-level acceptor impurities is 50 kV, and the ion implantation energy for deep-level acceptor impurities is 20 kV; another example is that the ion implantation energy for shallow-level acceptor impurities is 60 kV, and the ion implantation energy for deep-level acceptor impurities is 30 kV; yet another example is that the ion implantation energy for shallow-level acceptor impurities is 90 kV, and the ion implantation energy for deep-level acceptor impurities is 30 kV.

[0057] Since the atomic mass corresponding to the shallow-level acceptor impurity is greater than that corresponding to the deep-level acceptor impurity, setting the c to d ratio to 2-3 is beneficial for ensuring that the shallow-level and deep-level acceptor impurities are located at approximately the same predetermined depth in the substrate. This, in turn, helps to improve the uniformity and effectiveness of co-doping between the shallow-level and deep-level acceptor impurities, allowing the deep-level acceptors of the shallow-level acceptor impurities to better combine with the acceptor levels of the shallow-level acceptor impurities, thereby improving the stability of β-gallium oxide P-type conductivity.

[0058] In some embodiments, the ratio of c to d is selected using SRIM software to a suitable ratio, such as 2-3.

[0059] Figure 6 shows an example where the c / d ratio is 2. In this example, selenium is selected as the shallow-level acceptor impurity, and magnesium is selected as the deep-level acceptor impurity. The ion implantation energy for the shallow-level acceptor impurity is 50 kV, and the ion implantation energy for the deep-level acceptor impurity is 20 kV. In Figure 6, L51 represents the simulated curve of the doping concentration of the shallow-level acceptor impurity as a function of its doping depth, and L52 represents the simulated curve of the doping concentration of the deep-level acceptor impurity as a function of its doping depth. As shown in Figure 6, the peak doping concentrations of the shallow-level and deep-level acceptors roughly correspond to the same doping depth, approximately 200 Å. This indicates that by limiting the c / d ratio, the shallow-level and deep-level acceptors impurities can be located at approximately the same preset depth in the substrate. This is beneficial for improving the uniformity and effectiveness of co-doping with both shallow-level and deep-level acceptors, thereby better enhancing the stability of β-gallium oxide P-type conductivity.

[0060] In some embodiments, the method for preparing p-type gallium oxide further includes: S30, annealing the substrate in an oxygen environment to activate shallow-level acceptor impurities and deep-level acceptor impurities.

[0061] In step S30, the annealing time is 1 min to 5 min, and the annealing temperature is 500℃ to 900℃.

[0062] For example, the annealing time is 1 min, 2 min, 3 min, 4 min or 5 min, and the annealing temperature is 500℃, 600℃, 700℃, 800℃ or 900℃.

[0063] For example, step S30 includes: rapid annealing in an oxygen environment at 850°C to repair lattice damage generated during ion implantation and to activate the dopant element.

[0064] In this way, lattice damage generated during ion implantation can be effectively repaired, oxygen vacancies and other defects can be reduced, and shallow-level acceptor impurities and deep-level acceptor impurities can be effectively activated, thereby improving the electrical properties of the material.

[0065] After preparing P-type gallium oxide using the method described in this application, a metal contact layer, such as titanium and / or gold, can be deposited on the P-type gallium oxide (for example, the thickness of titanium is 20 nm and the thickness of gold is 80 nm), and rapid thermal annealing is performed in a nitrogen environment at 470 °C; the conductivity type and electrical properties of the P-type gallium oxide are evaluated by the van der Bauer method.

[0066] Figure 7 shows the current-voltage curves of the blank sample (undoped gallium oxide) and the p-type gallium oxide of this application. From this, it can be seen that the ion implantation dose of the shallow-level acceptor impurity is 1 × 10⁻⁶. 16 ions / cm 2 The ion implantation dose of the deep-level acceptor impurity is 1×10⁻⁶. 16 ions / cm 2 At this time, P-type gallium oxide exhibits P-type conductivity.

[0067] Measurements using the van der Berg method revealed that the ion implantation dose of the shallow-level acceptor impurity was 1 × 10⁻⁶. 16 ions / cm 2 The ion implantation dose of the deep-level acceptor impurity is 1×10⁻⁶. 16 ions / cm 2 At that time, the carrier concentration of p-type gallium oxide was 2.55 × 10⁻⁶. 16 cm -3 The Hall coefficient is 2.45 × 10⁻⁶. 3 With a resistivity of approximately 5731 Ω·cm, it is evident that the electrical performance of the P-type gallium oxide in this application is significantly superior to that of the blank sample (undoped gallium oxide).

[0068] In summary, the method for preparing p-type gallium oxide in this application, by selecting a ratio of ion implantation dose of shallow-level acceptor impurities to ion implantation dose of deep-level acceptor impurities of 0.9-1.1, is beneficial to improving the uniformity of co-doping and thus achieving better p-type doping effects. Furthermore, selecting a ratio of ion implantation energy of 2-3 for shallow-level and deep-level acceptor impurities is beneficial to achieving approximately the same preset depth for both in the substrate. This optimizes the doping position and concentration of shallow-level and deep-level acceptor impurities, rationally controls the introduction of defects, reduces the adverse effects of unnecessary defects on the material's conductivity, and improves the uniformity and effectiveness of co-doping. This, in turn, facilitates the modulation of the electronic structure of β-gallium oxide (β-Ga₂O₃), enhances the p-type conductivity of β-Ga₂O₃, and provides new possibilities for the development of high-performance semiconductor devices.

[0069] After co-doping, annealing can effectively repair the lattice damage generated during ion implantation, reduce oxygen vacancies and other defects, and effectively activate shallow and deep level acceptor impurities, thereby improving the electrical properties of the material.

[0070] An embodiment of this application also discloses a P-type gallium oxide, prepared using the preparation method of P-type gallium oxide in any of the above embodiments.

[0071] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0072] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A method for preparing p-type gallium oxide, characterized in that, include: A substrate is provided, the substrate being made of a material including β-gallium oxide; Co-doping of shallow-level acceptor impurities and deep-level acceptor impurities is formed on the substrate; Among them, the shallow-level acceptor impurity and oxygen are elements of the same group; The co-doping of shallow-level acceptor impurities and deep-level acceptor impurities on the substrate specifically includes: forming the co-doping of shallow-level acceptor impurities and deep-level acceptor impurities on the substrate by ion implantation. The ion implantation energy of the shallow-level acceptor impurity is ckv, and the ion implantation energy of the deep-level acceptor impurity is dkv. The ratio of c to d is 2-3, and the shallow-level acceptor impurity and the deep-level acceptor impurity reach approximately the same preset depth in the substrate.

2. The method for preparing p-type gallium oxide according to claim 1, characterized in that, The shallow-level acceptor impurity is selenium, sulfur, or tellurium.

3. The method for preparing p-type gallium oxide according to claim 1, characterized in that, The deep-level acceptor impurity is magnesium, beryllium, or calcium.

4. The method for preparing p-type gallium oxide according to claim 1, characterized in that, The ion implantation dose of the shallow-level acceptor impurity is a, and the ion implantation dose of the deep-level acceptor impurity is b, with the ratio of a to b being 0.9-1.

1.

5. The method for preparing p-type gallium oxide according to claim 4, characterized in that, The ion implantation dose of the shallow-level acceptor impurity is 1×10⁻⁶. 16 ions / cm 2 Up to 1×10 17 ions / cm 2 The ion implantation dose of the deep-level acceptor impurity is 1×10⁻⁶. 16 ions / cm 2 Up to 1×10 17 ions / cm 2 .

6. The method for preparing p-type gallium oxide according to claim 4, characterized in that, The ion implantation energy of the shallow-level acceptor impurity is 10 kV-200 kV; The ion implantation energy of the deep-level acceptor impurity is 10 kV-200 kV.

7. The method for preparing p-type gallium oxide according to claim 6, characterized in that, Shallow-level acceptor impurities and deep-level acceptor impurities reach approximately the same preset depth in the substrate.

8. The method for preparing p-type gallium oxide according to claim 4, characterized in that, The method for preparing p-type gallium oxide further includes annealing the substrate in an oxygen environment to activate the shallow-level acceptor impurities and the deep-level acceptor impurities.

9. The method for preparing p-type gallium oxide according to claim 8, characterized in that, In the annealing process for annealing the substrate to activate the shallow-level acceptor impurities and the deep-level acceptor impurities, the annealing time is 1 min to 5 min and the annealing temperature is 500℃ to 900℃.

10. A p-type gallium oxide, characterized in that, It is prepared by the method for preparing P-type gallium oxide according to any one of claims 1-9.

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