Unbalanced magnetron for high metal ionization in PVD magnetron sputtering

Abstract

Disclosed in the present application is an unbalanced magnetron for high metal ionization in PVD magnetron sputtering. The unbalanced magnetron comprises a magnetic yoke and a magnet block. The magnet block is mounted on the magnetic yoke, and the magnet block comprises an outer-ring magnet, an inner-ring magnet and a central magnet. A gap is provided between the outer side of the central magnet and the inner side of the outer-ring magnet. The inner-ring magnet is arranged in the gap between the outer-ring magnet and the central magnet. The outer-ring magnet has an N pole and an S pole, which are distributed opposite each other in a first direction. The central magnet has an N pole and an S pole, which are distributed opposite each other in the reverse of the first direction. The inner-ring magnet has an N pole and an S pole, which are distributed opposite each other in the radial direction of the inner-ring magnet. A magnetic pole on the outer side of the inner-ring magnet is the same as a magnetic pole at the end of the outer-ring magnet facing away from the magnetic yoke. A magnetic pole on the inner side of the inner-ring magnet is the same as a magnetic pole at the end of the central magnet facing away from the magnetic yoke. By means of providing the inner-ring magnet, which has a specific polarity configuration, between the outer-ring magnet and the central magnet, the present application renders the magnetic field strength on the side of the magnet block facing away from the magnetic yoke stronger, thereby being beneficial for improving plasma ignition.

Description

An unbalanced magnetron with high metal ionization achieved by PVD magnetron sputtering Technical Field

[0001] This application relates to the field of magnetron sputtering technology for semiconductor physical vapor deposition, and in particular to an unbalanced magnetron for PVD magnetron sputtering with high metal ionization. Background Technology

[0002] Magnetron sputtering is a common physical vapor deposition (PVD) process. It is frequently used for thin film deposition on semiconductor and electronic devices. The basic principle of magnetron sputtering thin film deposition is that argon gas is ionized in the deposition chamber to form plasma, and argon ions (Ar) in the plasma... + Under the influence of an electric field, the magnetron flies towards the target and sputters the target atoms. The sputtered or ionized target atoms are deposited on the substrate to form a thin film. To create the electric field, the target is negatively charged during the film deposition process, acting as the cathode, while the inner wall of the film deposition chamber is grounded. The magnetic field generated by the magnetron confines the charged particles, increasing the plasma density near the target surface and thus increasing the sputtering rate. The design of the magnetron and the optimization of its movement can help improve film uniformity and enhance full-area etching of the target.

[0003] TSV (Through Silicon Via) technology is a novel technical solution for interconnecting stacked chips in 3D integrated circuits. It involves creating vertical connections between chips and wafers to achieve interconnection. With the development of semiconductor technology, feature sizes have approached physical limits. Previous methods of reducing chip feature sizes are no longer sufficient to meet the demands of increasingly intelligent, compact, and integrated consumer electronics products. TSV-based 3D packaging provides the industry with a completely new approach, maximizing chip stacking density in three dimensions, minimizing interconnect lines, and reducing overall form factor, significantly improving chip speed and low-power performance.

[0004] Compared to traditional wire bonding (WB), tape auto-soldering (TAB), and flip chip (FC), TSV technology has the following advantages: (1) High-density integration: It can significantly improve the integration of electronic components, reduce the geometric size of the package, and meet the requirements of consumer electronics for multi-functionality and miniaturization; (2) Improved electrical performance: It can significantly shorten the length of electrical interconnects, reducing the wire length to the chip thickness and the transmission distance to one-thousandth, thereby reducing parasitic capacitance and power consumption; (3) Achievement of heterogeneous integration: It can integrate different functional chips (such as RF, memory, logic, digital, and MEMS) together to achieve multi-functionality of electronic components; (4) Reduced cost: Although the cost of 3D integration technology based on TSV is currently high in terms of process, it will be more cost-effective than 2D packaging in the future when the technology and equipment mature. Based on this, TSV is also known in the industry as the fourth generation of interconnect technology after wire bonding, tape auto-soldering, and flip chip, and is also known as the ultimate interconnect technology.

[0005] TSV technology was first applied to image sensors, and in the future, it will be widely used in logic chips, memory chips, CPUs, and even heterogeneous integration. Its application areas are constantly expanding, and its development prospects are very bright. After the insulating layer of the TSV is formed, a metal diffusion barrier layer and a seed layer are deposited using physical vapor deposition (PVD) to prepare for subsequent copper filling. If the filler material is polycrystalline silicon or tungsten, a seed layer is not required. Subsequent electroplating of copper requires continuous barrier and seed layers on the TSV sidewalls and bottom. The continuity and uniformity of the seed layer are considered the most important influencing factors for TSV copper filling. Depending on the shape, aspect ratio, and deposition method of the through-silicon via, the characteristics of the seed layer vary; the thickness, uniformity, and adhesion strength of the deposited seed layer are all important indicators.

[0006] In contrast to TSV, through-glass via (TGV) 3D interconnect technology, as a potential alternative to silicon-based interposers, is becoming a research hotspot due to its numerous advantages. Compared to silicon substrates, TGV's advantages are mainly reflected in: 1) Excellent high-frequency electrical characteristics. Glass is an insulating material with a dielectric constant only about 1 / 3 that of silicon, and its loss factor is 2-3 orders of magnitude lower than silicon, greatly reducing substrate loss and parasitic effects and ensuring the integrity of transmitted signals; 2) Large-size ultra-thin glass substrates are readily available. Glass manufacturers such as Corning, Asahi, and SCHOTT can provide ultra-large (>2m×2m) and ultra-thin (<50μm) panel glass and ultra-thin flexible glass materials; 3) Low cost. Benefiting from the availability of large-size ultra-thin panel glass and the elimination of the need for insulating layer deposition, the manufacturing cost of glass interposers is approximately 1 / 8 that of silicon-based interposers; 4) Simple process flow. There is no need to deposit insulating layers on the substrate surface and the inner wall of the TGV, and thinning is not required in ultra-thin interposers; 5) Strong mechanical stability. Even when the thickness of the adapter plate is less than 100μm, the warpage is still relatively small; 6) Wide range of applications. In addition to its promising application prospects in the high-frequency field, as a transparent material, it can also be used in the field of optoelectronic system integration. Its advantages in airtightness and corrosion resistance make glass substrates have great potential in the field of MEMS packaging.

[0007] For decades, the advancements in the semiconductor industry have been underpinned by a golden rule: Moore's Law. Moore's Law states that the number of transistors (components) that can be placed on an integrated circuit doubles approximately every 18-24 months. In other words, semiconductor manufacturing processes roughly advance to the next technology node every two years, and chip performance doubles accordingly. Moore's Law has charted the course and set the course for the chip industry's development. The iterations of chip manufacturing processes, from micrometers, submicrometers, and deep submicrometers, to 193nm, 157nm, 90nm, 65nm, 40nm, 28nm, 20nm, and more recently, 14nm, 12nm, 7nm, and 5nm, have all followed Moore's Law. As chip sizes approach their physical limits, the difficulty and cost of achieving performance improvements through process advancements are increasing. Semiconductor manufacturing is shifting from planar to three-dimensional, as exemplified by the currently popular 3D FinFET and 3D NAND. Simultaneously, cutting-edge packaging technologies such as 3D packaging are becoming crucial for improving the performance of complex chips, and the packaging and testing industry may well move towards a more technology-intensive direction in the future.

[0008] Whether it's advanced technology nodes in semiconductor manufacturing, or TSV or TGV, all require a continuous seed layer and a certain degree of uniformity on the sidewalls and bottom (if there is a bottom) of deep holes or trenches. For PVD magnetron sputtering, this means that during thin film deposition, high target atom ionization is needed, along with optimized ion guidance and the application of a negative bias voltage from the RF power supply to pull the ionized positive ions to the sidewalls and bottom of the deep holes or trenches. To achieve high target atom ionization, a high plasma density is required, allowing the sputtered target atoms to interact with Ar during their passage through the plasma. + Ionization occurs through collisions. High plasma density requires high target power and a relatively small magnetron size; that is, the target power per unit area of ​​the magnetron needs to be high. Therefore, the magnetron size must be relatively small. A smaller magnetron size presents the challenge of a weaker magnetic field, making plasma ignition and maintenance more difficult. To date, magnetron design optimization is far from meeting the stringent requirements of high target atomic ionization. Summary of the Invention

[0009] This application aims to address at least one of the technical problems existing in the prior art. To this end, this application proposes an unbalanced magnetron for PVD magnetron sputtering with high metal ionization. By placing an inner ring magnet with a specific polarity configuration between the outer ring magnet and the central magnet, the magnetic field strength of the magnet block in this design is stronger on the side away from the yoke, that is, the side closer to the PVD target. A stronger magnetic field facilitates plasma ignition at low pressure during magnetron sputtering and can maintain the plasma at relatively low pressures.

[0010] The PVD magnetron sputtering high metal ionization unbalanced magnetron according to the embodiments of this application includes:

[0011] Magnetic yoke;

[0012] A magnet block is mounted on a magnetic yoke. The magnet block includes an outer ring magnet, an inner ring magnet, and a central magnet. The central magnet is located inside the outer ring magnet. There is a gap between the outer side of the central magnet and the inner side of the outer ring magnet. The inner ring magnet is sandwiched in the gap between the outer ring magnet and the central magnet. The axis of the outer ring magnet is parallel to a first direction. The outer ring magnet has N poles and S poles that are relatively distributed along the first direction. The central magnet has N poles and S poles that are relatively distributed in opposite directions along the first direction.

[0013] The inner ring magnet has N and S poles that are distributed opposite to each other along its radial direction. The outer magnetic pole of the inner ring magnet is the same as the magnetic pole of the outer ring magnet at the end away from the yoke. The inner magnetic pole of the inner ring magnet is the same as the magnetic pole of the central magnet at the end away from the yoke. The outer magnetic pole of the inner ring magnet is opposite to its inner magnetic pole.

[0014] The PVD magnetron sputtering high metal ionization unbalanced magnetron according to the embodiments of this application has at least the following beneficial effects:

[0015] This application strengthens the magnetic field on one side of the magnet block by placing an inner ring magnet with a specific polarity configuration between the outer ring magnet and the central magnet. Specifically, the magnet block of this application includes an outer ring magnet, an inner ring magnet, and a central magnet. The central magnet is located inside the outer ring magnet, and the inner ring magnet is sandwiched between the outer ring magnet and the central magnet. The axis of the outer ring magnet is parallel to a first direction, and the outer ring magnet has N poles and S poles that are relatively distributed along the first direction. The central magnet has N poles and S poles that are relatively distributed in opposite directions along the first direction. Specifically, along the radial direction of the inner ring magnet, the outer side of the inner ring magnet has the N pole, and the inner side has the S pole.

[0016] The magnet block has two opposing sides along a first direction. On one side of the magnet block along the first direction, the N pole of the inner ring magnet is close to the N pole of the outer ring magnet, and the S pole of the inner ring magnet is close to the S pole of the central magnet. That is, after the magnetic fields of the outer ring magnet, the inner ring magnet, and the central magnet are superimposed, the N pole and the S pole of the magnet block on that side are strengthened, so the magnetic field strength on that side of the magnet block is stronger and the horizontal component is larger, making it easier for the plasma to ignite. Therefore, with this configuration, the magnetic field strength on one side of the magnetron is stronger when the magnetron size remains unchanged. During magnetron sputtering, the plasma is more likely to ignite on that side of the magnetron, thus the magnetron of this application can maintain plasma at a relatively low gas pressure.

[0017] In other embodiments of this application, the first plane is perpendicular to the first direction, and the ratio of the cross-sectional area S1 of the outer ring magnet cut by the first plane to the cross-sectional area S2 of the central magnet cut by the first plane satisfies the following:

[0018] Among them, R M It is the unbalance ratio of the magnetron, 1 <R M ≤4, more preferably, 1.5≤R M ≤3.

[0019] In other embodiments of this application, the inner ring magnet has an inner surface facing its own axis and an outer surface away from its own axis, the outer ring magnet has an inner surface facing its own axis, the outer surface of the inner ring magnet is attached to the inner surface of the outer ring magnet, or the inner ring magnet and the outer ring magnet are spaced apart, and the maximum gap between the outer surface of the inner ring magnet and the inner surface of the outer ring magnet does not exceed 10 mm.

[0020] The central magnet has an outer surface that is away from its own axis, the inner surface of the inner ring magnet is attached to the outer surface of the central magnet, or the central magnet and the inner ring magnet are spaced apart, and the maximum gap between the outer surface of the central magnet and the inner surface of the inner ring magnet does not exceed 10mm.

[0021] In other embodiments of this application, the central magnet is configured as a cylinder, the outer ring magnet is configured as a ring, the inner ring magnet is configured as a ring, and the centerlines of the central magnet, the outer ring magnet, and the inner ring magnet are all collinear.

[0022] In other embodiments of this application, the heights of the central magnet, outer ring magnet, and inner ring magnet are all equal and flush along the direction of the axis of the central magnet.

[0023] In other embodiments of this application, along the radial direction of the outer ring magnet, the thickness of the inner ring magnet is smaller than the diameter of the central magnet, and the thickness of the inner ring magnet is smaller than the thickness of the outer ring magnet.

[0024] In other embodiments of this application, the outer ring magnet is composed of a plurality of outer ring magnetic blocks, all of which are mounted on the magnetic yoke so that the outer ring magnet is connected to the magnetic yoke; and / or,

[0025] The inner ring magnet is composed of multiple inner ring magnetic blocks, all of which are mounted on the magnetic yoke so that the inner ring magnet is connected to the magnetic yoke; and / or,

[0026] The central magnet is composed of multiple central magnetic blocks, all of which are mounted on the magnetic yoke so that the central magnet is connected to the magnetic yoke.

[0027] In other embodiments of this application, the PVD magnetron sputtering high metal ionization unbalanced magnetron includes an electrically insulating layer, with an electrically insulating sheet located between the outer ring magnet, the inner ring magnet, and the central magnet; and / or,

[0028] The electrical insulation layer is located between two adjacent outer ring magnetic blocks; and / or,

[0029] The electrical insulation layer is located between two adjacent inner ring magnetic blocks; and / or,

[0030] The electrical insulation layer is located between two adjacent central magnetic blocks.

[0031] In other embodiments of this application, the outer ring magnetic block includes a plurality of first mounting holes and a plurality of connectors, wherein the plurality of first mounting holes are all adapted for the connectors to pass through, so that the outer ring magnetic block is connected to the magnetic yoke; and / or,

[0032] The inner ring magnet includes multiple second mounting holes, all of which are adapted for the passage of a connector to allow the inner ring magnet to connect to the yoke; and / or,

[0033] The central magnetic block includes multiple third mounting holes, all of which are suitable for the insertion of connectors to allow the central magnetic block to connect to the yoke.

[0034] In other embodiments of this application, the first mounting holes are evenly distributed at intervals on the outer ring magnet; and / or,

[0035] The second mounting holes are evenly distributed at intervals on the inner ring magnet; and / or,

[0036] The third mounting holes are evenly distributed at intervals on the central magnetic block.

[0037] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0038] The present application will be further described below with reference to the accompanying drawings and embodiments, wherein:

[0039] Figure 1 is a schematic diagram of the structure of a magnetron sputtering thin film deposition apparatus in the prior art;

[0040] Figure 2 is a schematic diagram of a magnetron in the prior art, in which there is a gap between the N pole and the S pole;

[0041] Figure 3 is a schematic diagram of a magnetron in the prior art, in which there is no gap between the N pole and the S pole;

[0042] Figure 4A is a schematic diagram of the magnetic field strength of a balanced magnetron;

[0043] Figure 4B is a schematic diagram of the magnetic field strength of an unbalanced magnetron;

[0044] Figure 5A is a schematic diagram of the magnetic field strength of an unbalanced magnetron with a gap between its two poles;

[0045] Figure 5B is a schematic diagram of the magnetic field strength of an unbalanced magnetron with no gap between its poles;

[0046] Figure 6 is a schematic diagram of the magnetron structure of this application;

[0047] Figure 7A shows the magnetic field distribution of the prior art magnetron in Figure 3;

[0048] Figure 7B is a magnetic field distribution diagram of the magnetron of this application (Figure 6).

[0049] Figure 8 shows the finite element calculation results for the optimized magnetic field strength;

[0050] Figure 9 shows a comparison of the magnetic field components parallel to the target surface of two magnetrons as shown in Figure 6.

[0051] Figure 10 is an assembly diagram of the magnetron shown in Figure 6.

[0052] Figure label:

[0053] Regarding the components shown in Figure 1: magnetron sputtering thin film deposition equipment 20, cavity 22, substrate stage 24, target material 26, main power supply 28, flow meter 30, vacuum pump 32, magnetron 34, substrate 36, top cover 38, insulating block 40, upper mask 42, lower mask 44, substrate pressure plate 46, collimator 48, DC bias voltage 50, electromagnetic coil 52, RF power supply 54, and matching unit 56;

[0054] Regarding Figure 2: magnetron 58, N-pole 60 of magnetron 58, and S-pole 62 of magnetron 58;

[0055] Regarding Figure 3: magnetron 64, N-pole 66 of magnetron 64, and S-pole 68 of magnetron 64;

[0056] Regarding the magnetron shown in Figure 4A: N pole 70, S pole 72, center line 74 of the gap between the two magnetic poles;

[0057] Regarding the magnetron shown in Figure 4B: the weaker magnetic pole 76, the stronger magnetic pole 78, and the location of maximum corrosion 80;

[0058] Regarding the magnetron shown in Figure 5A: N pole 82, S pole 84, and the location of maximum corrosion 86;

[0059] Regarding the magnetron shown in Figure 5B: N pole 88, S pole 90, and the location of maximum corrosion 92;

[0060] Regarding the magnetron shown in Figure 6: magnetron 94, outer ring magnet 96, center magnet 98, inner ring magnet 100;

[0061] Regarding the magnetron shown in Figure 10: magnetron 102, outer ring magnet 104, central magnet 106, inner ring magnet 108, yoke 110, connecting bolt 112, and magnet 114. Detailed Implementation

[0062] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0063] In the description of this application, it should be understood that the orientation descriptions, such as up, down, front, back, left, right, etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0064] In the description of this application, "several" means one or more, "multiple" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0065] In the description of this application, unless otherwise expressly defined, terms such as "setup," "installation," and "connection" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this application in conjunction with the specific content of the technical solution.

[0066] In the description of this application, the terms "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0067] As mentioned earlier, in related technologies, whether it's advanced technology nodes in semiconductor manufacturing or TSV or TGV, a continuous seed layer and a certain degree of uniformity are required on the sidewalls and bottom (if there is a bottom) of deep holes or trenches. For PVD magnetron sputtering, this means that high target atom ionization, optimized ion guidance, and the application of a negative bias voltage from the RF power supply are needed to pull the positively ionized target atoms to the sidewalls and bottom of the deep holes or trenches during thin film deposition. To achieve high target atom ionization, a high plasma density is required so that the sputtered target atoms have a chance to interact with Ar during their passage through the plasma. + Ionization occurs through collisions. High plasma density requires high target power and a relatively small magnetron size; that is, the target power per unit area of ​​the magnetron needs to be high. Therefore, the magnetron size must be relatively small. A smaller magnetron size presents the challenge of a weaker magnetic field, making plasma ignition and maintenance more difficult. To date, magnetron design optimization is far from meeting the stringent requirements of high target atomic ionization.

[0068] Before introducing the magnetron design of this application, the prior art magnetron sputtering thin film deposition equipment is described below. Figure 1 shows a prior art magnetron sputtering thin film deposition equipment 20. As shown in Figure 1, the magnetron sputtering thin film deposition equipment 20 includes a cavity 22, a substrate stage 24, a target 26, a main power supply 28, a flow meter 30, a vacuum pump 32, a magnetron 34, a substrate 36, a top cover 38, an insulating block 40, an upper mask 42, a lower mask 44, a substrate pressure plate 46, a collimator 48, a DC bias voltage 50, an electromagnetic coil 52, an RF power supply 54, and a matching unit 56. The target 26 is positioned facing the substrate stage 24. The main power supply 28 applies sputtering power to the target 26. The flow meter 30 controls the flow rate of the process cavity and controls the process gas pressure through the vacuum pump 32 and a gate valve. The target 26 is positioned directly above the substrate stage 24. The magnetron 34 can move relative to the target 26 under the drive of a driving device (not shown). The magnetron 34 is positioned above the target 26, that is, on the side of the target 26 facing away from the substrate stage 24. The function of the magnetron 34 will be described in detail below. The substrate stage 24 is used to support the substrate 36. A movable top cover 38 is provided on the top of the thin film deposition chamber 22, allowing the user to open the thin film deposition chamber 22, thereby facilitating the user to replace the target 26, perform maintenance on the magnetron sputtering thin film deposition equipment 20, and replace parts in the equipment. A sealing ring (not shown) may be provided between the thin film deposition chamber 22 and the top cover 38 to prevent the thin film deposition chamber 22 from communicating with the atmospheric environment.

[0069] The target material 26 is generally a conductor. The main power supply 28 is electrically connected to the target material 26, which is located at the target material mounting position, through a conductive wire, and the main power supply 28 can supply power to the target material 26. In Figure 1, the negative terminal of the main power supply 28 is connected to the target material 26, and the positive terminal of the main power supply 28 is grounded. The inner wall surface of the thin film deposition chamber 22 is also grounded. In this way, when the main power supply 28 supplies power to the target material 26, an electric field is formed between the target material 26 and the inner wall surface of the thin film deposition chamber 22. The substrate stage 24 used to support the substrate 36 can be grounded or electrically suspended.

[0070] Flow meter 30 is connected to thin film deposition chamber 22 and can be connected to an external gas source. The external gas source, not shown in Figure 1, is a container storing working gas and is connected to flow meter 30 via a pipe. The process gas can be argon. When flow meter 30 is activated, the process gas can be introduced into the interior of thin film deposition chamber 22; furthermore, the flow rate of the working gas can be adjusted via flow meter 30.

[0071] Vacuum pump 32 is connected to thin film deposition chamber 22. Vacuum pump 32 is used to remove gases, including air and process gases, from chamber 22. During the thin film deposition process on substrate 36 by magnetron sputtering thin film deposition equipment 20, the internal chamber of thin film deposition chamber 22 is isolated from the atmospheric environment, and the inside of thin film deposition chamber 22 is a vacuum. Vacuum pump 32 can remove gases from thin film deposition chamber 22, thereby achieving a vacuum state in thin film deposition chamber 22 and maintaining the vacuum level in thin film deposition chamber 22 within a suitable range.

[0072] The magnetron sputtering thin film deposition apparatus 20 also includes an insulating block 40 and a mask. The mask is detachably mounted inside the thin film deposition chamber 22 and is replaceable. The mask covers a portion of the inner wall surface of the thin film deposition chamber 22 to prevent atoms sputtered from the target 26 from adhering to the inner wall surface of the thin film deposition chamber 22. In Figure 1, two masks are provided, namely an upper mask 42 and a lower mask 44. A substrate clamp 46 presses down on the periphery of the substrate 36 during thin film deposition. The insulating block 40 is made of insulating material. The bottom surface of the insulating block 40 contacts the upper mask 42, and the top surface of the insulating block 40 contacts the edge of the target 26. The insulating block 40 supports the edge of the target 26 and separates the upper mask 42 and the target 26. The mask can be grounded or ungrounded.

[0073] The working principle of the magnetron sputtering thin film deposition apparatus 20 in Figure 1 is as follows. Process gas, such as argon, is introduced into the thin film deposition chamber 22. The main power supply 28 supplies power to the target 26, thereby generating an electric field inside the thin film deposition chamber 22. This electric field ionizes at least a portion of the argon gas. Specifically, electrons move in a spiral motion on the target surface under the influence of the electric and magnetic fields, or move from the target 26 towards the substrate 36 or the mask. During the movement of electrons, they collide with argon atoms, thereby ionizing the argon atoms to produce argon ions (Ar). + The positively charged argon ions move towards the target 26 and bombard its surface under the influence of an electric field, thus sputtering the target 26. The sputtered neutral atoms (neutral target atoms) or those sputtered out and ionized during their passage through the plasma deposit onto the substrate 36, forming a relatively uniform thin film on its surface. The electrons generated during sputtering and those generated during collisions are used to form and maintain the plasma on the target 26 surface, allowing the process of argon ionization and argon ion bombardment of the target 26 to be repeated, thereby enabling continuous magnetron sputtering thin film deposition.

[0074] Electrons generated during sputtering of the target 26, electrons ionized from argon atoms, and electrons generated from the ionization of sputtered neutral atoms are all subject to electric and magnetic fields, resulting in a drift in the direction indicated by E (electric field) × B (magnetic field) (referred to as E×B drift). The trajectory of these drifting electrons approximates a cycloid. If the magnetic field provided by the magnetron 34 is a toroidal magnetic field, the electrons will move in a toroidal spiral motion on the surface of the target 26 with an approximate cycloid trajectory. These electrons not only have long paths but are also confined to a plasma region close to the surface of the target 26. Furthermore, in this region, argon atoms ionize into a large number of argon ions, which bombard the target 26, thereby achieving a high deposition rate.

[0075] When the power of the target 26 is relatively high and the size of the toroidal magnetron 34 is relatively small, the density of the toroidal plasma is relatively high, and the sputtered target atoms have a chance to interact with Ar during the process of passing through the plasma. + The target atoms are ionized by collision. Deep hole trench filling materials are generally conductive metals. The ionization of target atoms is usually called metal ionization to distinguish it from the ionization of chemically inert process gases, such as argon. When metal ionization is insufficient, the angle between the unionized target atoms and the direction along the sidewall of the deep hole or trench may be large, making it impossible for them to deposit on the sidewall and bottom of the deep hole or trench. These target atoms with large angles to the direction along the sidewall of the deep hole or trench will accumulate at the opening of the deep hole or trench, sealing it off if the opening size is small, causing defects within the deep hole or trench. These target atoms with large angles to the direction along the sidewall of the deep hole or trench can be filtered out using the collimator 48 shown in Figure 1. The collimator 48 can be biased with a DC voltage of 50.

[0076] Once the target atoms from magnetron sputtering are ionized, they can be guided by the electromagnetic coil 52 or a permanent magnet to prevent them from being lost onto the lower mask 44. The magnetic field of the electromagnetic coil 52 or the permanent magnet pushes the metal ions towards the center of the cavity 22, or away from the lower mask 44; causing the metal ions to move towards the deep hole or trench in a direction nearly perpendicular to the substrate 36, that is, along the sidewall of the deep hole or trench. As the metal ions approach the substrate, they are attracted and accelerated by the bias voltage provided by the RF power supply 54 applied to the substrate stage 24, and finally deposited on the upper surface of the substrate 36 and the sidewall and bottom of the deep hole or trench. The RF power supply 54 is connected to the substrate stage through a matching unit 56.

[0077] Referring to Figures 1 to 3, the prior art magnetrons are described. The magnetron 34 in Figure 1 can be of various sizes and shapes. Figure 2 shows a prior art toroidal magnetron 58 used to improve metal ionization. In Figure 2, the gap d between the N pole 60 and the S pole 62 of the magnetron 58 is too large, resulting in an excessively large size for the magnetron 58. Such a structure does not contribute to increasing plasma density. Figure 3 shows a prior art small-sized toroidal magnetron 64. There is no gap between the N pole 66 and the S pole 68 of this magnetron, allowing for a very small outer diameter. In the magnetron 64 shown in Figure 3, the N pole 66 and the S pole 68 of the magnet block are in contact, with opposite magnetic field strengths at the contact point. These cancel each other out, resulting in a weakened magnetic field in the magnetron 64. A weak magnetic field is detrimental to plasma ignition and maintenance, requiring higher process gas pressures. In addition, as shown in Figure 3, there is no gap between the N pole 66 and the S pole 68 of the magnetron 64, which results in a relatively sharp bend in the magnetic field lines on the surface of the target 26 between the N pole 66 and the S pole 68 of the magnetron 64. That is, the range in which the component of the magnetic field lines parallel to the surface of the target 26 reaches a sufficient value is relatively short. This situation is not conducive to plasma ignition and plasma maintenance.

[0078] To address the aforementioned issues, this application proposes a non-equilibrium magnetron for PVD magnetron sputtering with high metal ionization. The magnetron in this application is a non-equilibrium magnetron; for comparison, a balanced magnetron is used first. Referring to Figure 4A, in a balanced magnetron, the magnetic field lines and plasma are symmetrical with respect to the center line of the gap between the two magnetic poles 70 and 72, with maximum erosion occurring at the center line 74 of the gap. The magnetic field also dissipates very quickly at a distance, resulting in less plasma heating on the substrate. Referring to Figure 4B, in a non-equilibrium magnetron, the magnetic field lines and plasma shift towards the weaker magnetic pole 76, or rather, away from the stronger magnetic pole 78. Maximum erosion occurs on the target material closer to the weaker magnetic pole 76, as shown in Figure 4B; the location 80 where maximum erosion occurs is closer to the weaker magnetic pole 76.

[0079] The unbalance ratio of an unbalanced magnetron is defined as the ratio of the cross-sections of the two magnetic poles. For the toroidal magnetrons in Figures 1 and 2, the unbalance ratio R is... M It is the ratio of the area of ​​the outer ring-shaped N pole to the area of ​​the inner cylindrical S pole.

[0080] The unbalance ratios of the toroidal magnetrons in Figures 1 and 2 are clearly greater than 1. Magnetrons with unbalance ratios greater than 1 have focused magnetic field lines, which reduces the loss of metal ions onto the mask. The balanced magnetron in Figure 4A has an unbalance ratio close to 1. The unbalance ratio of the unbalanced magnetron in Figure 4B is slightly less than 1, meaning the outer N poles are weak, while the central S pole is relatively stronger. Figure 5A shows an unbalanced magnetron with a gap between the poles and an unbalance ratio greater than 1. This magnetron includes an N pole 82, an S pole 84, and the location of maximum erosion 86; its unbalance ratio is 3.8. Figure 5B shows an unbalanced magnetron without a gap between the poles. This magnetron includes an N pole 88, an S pole 90, and the location of maximum erosion 92; its unbalance ratio is 3.5.

[0081] In summary, magnetrons have the following requirements:

[0082] First, the surface area of ​​the target material 26 is small, resulting in a small plasma size and high density.

[0083] Secondly, a strong magnetic field makes it easy for the plasma to ignite, and more importantly, it can maintain the plasma at relatively low pressure.

[0084] Third, a relatively high non-equilibrium ratio.

[0085] Fourth, the thicker the target material 26, the wider the distance between the two magnetic poles of the magnetron must be.

[0086] It should be noted that the first and second requirements mentioned above are contradictory. Taking into account the above requirements for the magnetron, a magnetron 94 of this application is shown in Figure 6. The magnetic field generated by the N pole (facing the target 26 below) of the outer ring magnet 96 and the S pole of the central magnet 98, and the magnetic field generated by the inner ring magnet 100, can be superimposed. Therefore, the horizontal magnetic field of the magnetron 94 of this application is enhanced, making it easier for the plasma to ignite.

[0087] It's important to note that magnetron sputtering at low pressures is problematic because particles (argon atoms) are less likely to collide. Since particles lose energy upon collision, the resulting film density is lower, leading to poorer film quality. Lower pressures reduce the chances of the metal atoms from the target colliding with other particles, allowing them to maintain higher energy levels and thus producing better film quality. Furthermore, the ionized metal ions from the target also prefer minimal collisions to revert to atoms. Therefore, magnetron sputtering is generally performed at low pressures.

[0088] Referring to Figure 6, this application strengthens the magnetic field strength on the side of the magnet block 114 facing the magnetron sputtering target by providing an inner ring magnet 100 with a specific polarity configuration between the outer ring magnet 96 and the central magnet 98. Specifically, in some embodiments, the magnet block 114 of this application includes an outer ring magnet 96, an inner ring magnet 100, and a central magnet 98. The central magnet 98 is located inside the outer ring magnet 96, and there is a gap between the outer side of the central magnet 98 and the inner side of the outer ring magnet 96. The inner ring magnet 100 is sandwiched in the gap between the outer ring magnet 96 and the central magnet 100. The axis of the outer ring magnet 96 is parallel to a first direction, and the outer ring magnet 96 has N poles and S poles that are relatively distributed along the first direction. The central magnet 98 has N poles and S poles that are relatively distributed in opposite directions along the first direction. The inner ring magnet 100 has N poles and S poles that are distributed opposite to each other along its radial direction. The outer magnetic poles of the inner ring magnet 100 are the same as the magnetic poles of the outer ring magnet 96 at the end away from the yoke. The inner magnetic poles of the inner ring magnet are the same as the magnetic poles of the central magnet 98 at the end away from the yoke. The outer magnetic poles of the inner ring magnet 100 are opposite to its inner magnetic poles.

[0089] Referring again to Figure 6, the magnet block 114 has two opposite sides along the first direction. One side of the upper surface faces the yoke, and the other side of the lower surface faces the target. On the side of the magnet block 114 facing the target along the first direction, i.e., the lower surface, the N pole of the inner ring magnet 100 is close to the N pole of the outer ring magnet 96, and the S pole of the inner ring magnet 100 is close to the S pole of the central magnet 98. That is, after the magnetic fields of the outer ring magnet 96, the inner ring magnet 100, and the central magnet 98 are superimposed, the N pole and S pole of the magnet block 114 on this side are strengthened, so the magnetic field strength of the magnet block 114 on this side is stronger and the horizontal component is larger, making it easier for the plasma to ignite and be maintained. Therefore, with this configuration, the magnetic field strength on the side of the magnetron 94 facing the target is stronger when the size of the magnetron 94 remains unchanged. During magnetron sputtering, the plasma is more likely to ignite on this side of the magnetron 94, and the magnetron 94 of this application can maintain the plasma at a relatively low gas pressure.

[0090] In some embodiments, the first plane is perpendicular to the first direction, and the ratio of the cross-sectional area S1 of the outer ring magnet 96 cut by the first plane to the cross-sectional area S2 of the central magnet 98 cut by the first plane satisfies the following:

[0091] Among them, R M It is the unbalance ratio of the magnetron, 1 <R M ≤4, more preferably, 1.5≤R M ≤3.

[0092] Referring to Figures 7A and 7B, Figure 7A is a magnetic field distribution diagram of the magnetron 64 in prior art Figure 2, where the magnetic field lines are symmetrical, meaning the magnetic field distribution above and below the magnetron 64 is symmetrical. Figure 7B is a magnetic field distribution diagram of the magnetron 94 of this application (see Figure 6), where the magnetic field strength is enhanced below (where the target 26 is located) and weakened above. Specifically, on the lower side of the magnetron 94, the N pole of the inner ring magnet 100 is close to the N pole of the outer ring magnet 96. The superposition of the N poles of the outer ring magnet 96 and the inner ring magnet 100 enhances the magnetic field strength. Similarly, the S pole of the inner ring magnet 100 is close to the S pole of the central magnet 98. The superposition of the S poles of the central magnet 98 and the inner ring magnet 100 enhances the magnetic field strength. Therefore, the magnetic field strength of the magnetron 94 towards the target 26 is enhanced, the magnetic field component parallel to the target sputtering surface is larger, the plasma is more easily ignited, and it is easier to maintain the plasma.

[0093] Referring to Figure 6, above the magnetron 94 (the side facing away from the target 26, i.e., the side to be connected to the yoke), the magnetic field above the magnetron 94 is weakened due to the superposition of the S pole of the outer ring magnet 96 and the N pole of the inner ring magnet 100, and the magnetic field above the center magnet 98 and the inner ring magnet 98. Therefore, the magnetic field above the magnetron 94 is weakened. This weakening of the magnetic field above the magnetron 94 helps reduce interference from magnetism on components such as sensors in the magnetron sputtering equipment 20, facilitating the operation of the magnetron sputtering thin film deposition equipment 20.

[0094] Referring to Figure 6, the inner ring magnet 100 has an inner surface facing its own axis and an outer surface facing away from its own axis, while the outer ring magnet 96 has an inner surface facing its own axis. The outer surface of the inner ring magnet 100 and the inner surface of the outer ring magnet 96 may or may not have a gap. Specifically, in some embodiments, the outer surface of the inner ring magnet 100 is attached to the inner surface of the outer ring magnet 96; in some embodiments, the inner ring magnet 100 and the outer ring magnet 96 are spaced apart, and the maximum gap between the outer surface of the inner ring magnet 100 and the inner surface of the outer ring magnet 96 does not exceed 10 mm. The central magnet 98 has an outer surface facing away from its own axis, and the outer surface of the central magnet 98 and the inner surface of the inner ring magnet 100 may or may not have a gap. Specifically, in some embodiments, the inner surface of the inner ring magnet 100 is attached to the outer surface of the central magnet 98; in some embodiments, the central magnet 98 and the inner ring magnet 100 are spaced apart, and the maximum gap between the outer surface of the central magnet 98 and the inner surface of the inner ring magnet 100 does not exceed 10 mm. This configuration results in a compact magnetron 94 structure, which is beneficial for improving plasma density and metal ionization rate.

[0095] Referring again to Figure 6, in some embodiments, the central magnet 98 is configured as a cylinder, the outer ring magnet 96 is configured as a ring, and the inner ring magnet 100 is configured as a ring, with the centerlines of the central magnet 98, outer ring magnet 96, and inner ring magnet 100 all collinear. Configuring the magnet block structure into cylindrical, ring, or other shapes makes the magnetron 94 structure more compact and simplified; it also reduces the manufacturing difficulty of the magnet block's related structures, thereby reducing manufacturing costs. The collinearity of the centerlines of the central magnet 98, outer ring magnet 96, and inner ring magnet 100 ensures a uniform distribution of the magnetic field in the sputtering region. This uniform magnetic field distribution helps improve magnetron sputtering efficiency and uniformity, thereby enhancing the quality and performance of the deposited film.

[0096] Referring again to Figure 6, in some embodiments, the heights of the central magnet 98, the outer ring magnet 96, and the inner ring magnet 100 are all equal along the direction of the axis of the central magnet 98.

[0097] Referring to Figure 10, in some embodiments, the outer ring magnet 96 is composed of multiple outer ring magnetic blocks 104, all of which are mounted on the yoke 110 so that the outer ring magnet 96 is connected to the yoke 110 via connecting bolts 112. The inner ring magnet 100 is composed of multiple inner ring magnetic blocks 108, all of which are mounted on the yoke 110 so that the inner ring magnet 100 is connected to the yoke 110. The central magnet 98 is composed of multiple central magnetic blocks 106, all of which are mounted on the yoke 110 so that the central magnet 98 is connected to the yoke 110. By designing the outer ring magnet 96, inner ring magnet 100, and central magnet 98 to be composed of multiple magnetic blocks, flexible assembly of the magnetron 102 is achieved.

[0098] In some embodiments, the PVD magnetron sputtered high-metal-ionization unbalanced magnetron 102 includes an electrically insulating layer, which may be composed of an electrically insulating sheet, an electrically insulating filler layer, or an electrically insulating coating. Specifically, when the electrically insulating layer is composed of an electrically insulating coating, the electrically insulating coating may also be an insulating layer similar to epoxy resin, which also has the function of bonding adjacent magnet blocks, making the entire magnetron 102 structure more robust and reliable. When the electrically insulating layer is composed of an electrically insulating sheet or an electrically insulating filler layer, the electrically insulating sheet or electrically insulating filler layer may be located between the outer ring magnet, the inner ring magnet, and the central magnet, or between two adjacent outer ring magnets 104, between two adjacent inner ring magnets 108, or between two adjacent central magnets 106. For convenience, the outer ring magnets 104, the central magnets 106, and the inner ring magnets 108 are collectively referred to as magnet blocks 114. The electrical insulating sheet or electrical insulating filling layer is located between two adjacent magnet blocks 114, which effectively prevents the eddy current generated by the magnetron 102 during high-speed movement from being directly transmitted between multiple magnet blocks 114, and reduces the risk of the magnetron 102 overheating.

[0099] Referring to Figure 10, in some embodiments, the outer ring magnet 104 includes a plurality of first mounting holes, all of which are adapted for the passage of a connector to connect the outer ring magnet 104 to the yoke 110. The inner ring magnet 108 includes a plurality of second mounting holes, all of which are adapted for the passage of a connector to connect the inner ring magnet 108 to the yoke 110. The central magnet 106 includes a plurality of third mounting holes, all of which are adapted for the passage of a connector to connect the central magnet 106 to the yoke 110. The use of mounting holes simplifies and speeds up the installation of the magnet 114. The arrangement of the multiple mounting holes improves the structural stability and reliability of the magnetron 102.

[0100] In summary, as a preferred embodiment, referring to Figure 10, due to the large size and high magnetic strength of the magnet block 114, the magnets of each magnetic pole are divided into four equal parts, and each small magnet block has three mounting holes. Bolts pass through the mounting holes to fix the magnet block 114 to the circular magnetic yoke 110. The four equal parts of the magnet block can be separated by an electrically insulating material to reduce excessive eddy currents generated when the magnetron 102 moves at high speed.

[0101] The following is a further explanation of the principle behind this scheme, based on which the optimal magnetron structure can be designed. Specifically, refer to Figure 8, which shows the finite element calculation results for magnetic field strength optimization. In some embodiments, the outer diameter of the magnetron 94 (110 mm) and the magnet height (30 mm) shown in Figure 6 are fixed, and the unbalance ratio R of the magnetron 94 is... M Set between 2 and 3, the central magnet 98 is cylindrical, and the radius R of the central magnet 98 is... o The gap d between the outer ring magnet 96 and the central magnet 98 are both variables. Figure 8 calculates the magnetic field components of the parallel target material on the surface of the target material 26, where the target material thickness is 26 mm and the distance between the magnetron 96 and the target material 26 is 2 mm. Specifically, B r It is the horizontal component of the magnetic field, measured in Tesla (T), and is perpendicular to the axis containing d and R. o The axis in question is within the range of 0 to 0.15; the variables corresponding to the X and Y axes are the radius R of the central magnet 98, respectively. o The distance d between the inner wall of the outer ring magnet 96 and the outer wall of the central magnet 98 is the width of the inner ring magnet 100. Figure 8 shows the change in the horizontal magnetic field strength of the magnetron 94 in Figure 6. Due to the constraint relationship, R M It falls between 2 and 3, so the data is only available within the coordinate region shown in Figure 8. Specifically, when d equals 0, R... o It cannot be less than 27mm. For example, when d equals 0, R... oIt can only be between 27 and 31.5 mm; when d equals 40, R0 is basically fixed at 10 mm (because it needs to satisfy R). M The constraint relationship, i.e., R M (Between 2 and 3). As shown in the figure, d is around 28. Draw a line and R. o The straight line B is parallel to the axis shown. r There is a peak when d equals 28.

[0102] Figure 8 shows the approximate range of the horizontal magnetic field strength B of the magnetron. r It is the highest, meaning it has the strongest horizontal magnetic field; through d and R o The relationship between the magnetic field strength B in the horizontal direction of the magnetron and the value of B. r It is the largest, thereby optimizing the design of the magnetron 94, making the magnetic field strength on the surface of the target material 26 the strongest, and the plasma ignition effect the best.

[0103] Referring to Figure 9, a comparison is made of the magnetic field components of the two magnetrons 94 shown in Figure 6, parallel to the surface of the target 26. By optimizing R... o The addition of 'd' can significantly increase the magnetic field strength. Specifically, "old" refers to a slit magnetron, and "new" refers to the magnetron of this application. For the X-axis of Figure 9, the origin 0 is the target center, and the X-axis represents a range from the target center along the target surface to 150 mm. For the Y-axis, the Y-axis shows the magnetic field strength, with the horizontal component representing the absolute value. Figure 9 illustrates the distribution of the magnetic field strength along the horizontal direction of the magnetron within a range from the target center to 150 mm.

[0104] Further explanation of Figure 9: The Y-axis in Figure 9 represents the magnetic field strength B in the horizontal direction of the magnetron. r The magnetron has a cylinder at its very center, surrounded by a ring. This can be understood as the center of the magnetron being the center magnet 98, and the outer ring being the outer ring magnet 96. The "old" magnetron lacks an inner ring magnet 100 to fill the gap between them, while the "new" magnetron has an inner ring magnet 100 filling the gap. Along the Y-axis, the horizontal component of the magnetic field strength at the very center is 0, with only a vertical component. The magnetic field lines are perpendicular to the surface of the magnet block, and the horizontal magnetic field strength B... r It is 0; then at a position between the gap between the central magnet 98 and the outer ring magnet 96, B r It is the highest; referring to Figure 5A, there is a gap between the inner cylindrical magnet and the outer ring magnet. At approximately a certain location within this gap, the horizontal magnetic field strength B... r It is the largest, as shown in Figure 9, the highest point of the convex curve is B.r The peak value. Referring to Figure 6, the magnetron of this application is configured such that the inner ring magnet 100 fills the gap between the columnar central magnet 98 and the outer ring magnet 96. At a certain position of the inner ring magnet 100, the horizontal magnetic field strength B r It is the largest, as shown in Figure 9, the highest point of the convex curve is B. r The peak value.

[0105] The embodiments of this application have been described in detail above with reference to the accompanying drawings. However, this application is not limited to the above embodiments. Within the scope of knowledge possessed by those skilled in the art, various changes can be made without departing from the spirit of this application. Furthermore, unless otherwise specified, the embodiments and features described in the embodiments of this application can be combined with each other.

Claims

1. A non-equilibrium magnetron for PVD magnetron sputtering with high metal ionization, characterized in that, include: Magnetic yoke; A magnet block is mounted on the magnetic yoke. The magnet block includes an outer ring magnet, an inner ring magnet, and a central magnet. The central magnet is located inside the outer ring magnet. There is a gap between the outer side of the central magnet and the inner side of the outer ring magnet. The inner ring magnet is sandwiched in the gap between the outer ring magnet and the central magnet. The axis of the outer ring magnet is parallel to a first direction. The outer ring magnet has N poles and S poles that are relatively distributed along the first direction. The central magnet has N poles and S poles that are relatively distributed in opposite directions along the first direction. The inner ring magnet has N poles and S poles that are distributed opposite to each other along its radial direction. The outer magnetic poles of the inner ring magnet are the same as the magnetic poles of the outer ring magnet at the end away from the yoke. The inner magnetic poles of the inner ring magnet are the same as the magnetic poles of the central magnet at the end away from the yoke. The outer magnetic poles of the inner ring magnet are opposite to the inner magnetic poles.

2. The PVD magnetron sputtering high metal ionization unbalanced magnetron according to claim 1, characterized in that, The first plane is perpendicular to the first direction, and the ratio of the cross-sectional area S1 of the outer ring magnet intercepted by the first plane to the cross-sectional area S2 of the central magnet intercepted by the first plane satisfies the following: Among them, R M It is the unbalance ratio of the magnetron, 1 <R M ≤4, more preferably, 1.5≤R M ≤3.

3. The PVD magnetron sputtering high metal ionization unbalanced magnetron according to claim 2, characterized in that, The inner ring magnet has an inner surface facing its own axis and an outer surface away from its own axis, the outer ring magnet has an inner surface facing its own axis, the outer surface of the inner ring magnet is attached to the inner surface of the outer ring magnet, or the inner ring magnet and the outer ring magnet are spaced apart, and the maximum gap between the outer surface of the inner ring magnet and the inner surface of the outer ring magnet does not exceed 10mm. The central magnet has an outer surface that is away from its own axis, the inner surface of the inner ring magnet is attached to the outer surface of the central magnet, or the central magnet and the inner ring magnet are spaced apart, and the maximum gap between the outer surface of the central magnet and the inner surface of the inner ring magnet does not exceed 10 mm.

4. The PVD magnetron sputtering high metal ionization unbalanced magnetron according to claim 3, characterized in that, The central magnet is configured as a cylinder, the outer ring magnet is configured as a ring, and the inner ring magnet is configured as a ring. The center lines of the central magnet, the outer ring magnet, and the inner ring magnet are all collinear.

5. The PVD magnetron sputtering high metal ionization unbalanced magnetron according to claim 4, characterized in that, Along the direction of the axis of the central magnet, the heights of the central magnet, the outer ring magnet, and the inner ring magnet are all equal and flush.

6. The PVD magnetron sputtering high metal ionization unbalanced magnetron according to claim 5, characterized in that, Along the radial direction of the outer ring magnet, the thickness of the inner ring magnet is smaller than the diameter of the central magnet, and the thickness of the inner ring magnet is smaller than the thickness of the outer ring magnet.

7. The PVD magnetron sputtering high metal ionization unbalanced magnetron according to claim 1, characterized in that, The outer ring magnet is composed of multiple outer ring magnetic blocks, all of which are mounted on the magnetic yoke so that the outer ring magnet is connected to the magnetic yoke; and / or The inner ring magnet is composed of multiple inner ring magnetic blocks, all of which are mounted on the magnetic yoke so that the inner ring magnet is connected to the magnetic yoke; and / or The central magnet is composed of multiple central magnetic blocks, all of which are mounted on the magnetic yoke so that the central magnet is connected to the magnetic yoke.

8. The PVD magnetron sputtering high metal ionization unbalanced magnetron according to claim 7, characterized in that, The PVD magnetron sputtering high metal ionization unbalanced magnetron includes an electrically insulating layer located between the outer ring magnet, the inner ring magnet, and the central magnet; and / or, The electrically insulating layer is located between two adjacent outer ring magnetic blocks; and / or, The electrically insulating layer is located between two adjacent inner ring magnetic blocks; and / or, The electrical insulating layer is located between two adjacent central magnetic blocks.

9. The PVD magnetron sputtering high metal ionization unbalanced magnetron according to claim 7, characterized in that, The outer ring magnetic block includes a plurality of first mounting holes and a plurality of connectors, wherein each of the plurality of first mounting holes is adapted to allow the connectors to pass through, so that the outer ring magnetic block is connected to the magnetic yoke; and / or The inner ring magnet includes a plurality of second mounting holes, each of which is adapted to allow the connector to pass through, so that the inner ring magnet connects to the magnetic yoke; and / or The central magnetic block includes a plurality of third mounting holes, all of which are adapted to allow the connector to pass through, so that the central magnetic block is connected to the magnetic yoke.

10. The PVD magnetron sputtering high metal ionization unbalanced magnetron according to claim 9, characterized in that, The first mounting holes are evenly distributed at intervals on the outer ring magnet; and / or, The second mounting holes are evenly distributed at intervals on the inner ring magnet; and / or, The third mounting holes are evenly distributed at intervals on the central magnetic block.

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