TGV substrate for alleviating thermal stress and manufacturing method thereof

Abstract

A through glass via (TGV) substrate according to an embodiment of the present invention may comprise: a glass substrate comprising a TGV; a polymer coating layer comprising a polymer material and coated on the inner wall of the TGV; and a conductive material disposed on the polymer coating layer and filling the TGV.

Description

Thermal stress relief TGV substrate and manufacturing method thereof

[0001] The present invention relates to a TGV substrate and a method for manufacturing the same, and is a TGV substrate technology that improves thermal durability by positioning a thermal expansion stress relief material between conductive material substrates in a TGV.

[0002] With the advancement of 2.5D and 3D stacking technologies in the semiconductor packaging field, interposer technology that meets the demands of high integration, low power, and miniaturization is attracting attention. Interposers have a structure that forms penetrating electrodes inside a substrate to implement electrical connections between dies, and the representative method for implementing this is Through Silicon Via (TSV) technology. Existing TSV technology has limitations in electrical loss and process cost because it uses a silicon substrate. In contrast, Through Glass Via (TGV) technology, which uses a glass substrate instead of silicon, is emerging as a next-generation packaging technology due to its advantages of excellent insulation properties, low dielectric loss, and low-cost mass production.

[0003] In the TGV structure, the interior of the vias in the glass substrate are filled with a metal material for electrical connection. However, if the coefficient of thermal expansion between the glass substrate and the filling metal is large, problems such as interface delamination, cracks, and mechanical damage may occur during high-temperature processes or repeated thermal shock environments. Various technologies are being studied to alleviate these problems in the existing TSV structure. However, these technologies are optimized for silicon substrate-based structures and have limitations in directly applying them to alleviate the thermal stress of TGVs. Therefore, a new structure and manufacturing method that can alleviate the mismatch in the coefficient of thermal expansion between the glass and the filling metal are required.

[0004] In order to solve the above-mentioned problem, the present invention provides a through glass via (TGV) substrate and a method for manufacturing the same, which can alleviate thermal stress caused by a difference in thermal expansion coefficient between a glass substrate and a conductive material by forming a polymer coating layer made of a polymer material on the inner wall of the TGV and filling a conductive material on the polymer coating layer.

[0005] A TGV substrate according to one embodiment of the present invention may include a glass substrate including a through glass via (TGV), a polymer coating layer including a polymer material coated on an inner wall of the through glass via, and a conductive material positioned on the polymer coating layer to fill the through glass via.

[0006] Additionally, according to one embodiment, the Young's Modulus of the polymer coating layer may be characterized as being lower than that of the conductive material and the glass substrate.

[0007] Additionally, in one embodiment, the challenge material may be characterized as being copper.

[0008] Additionally, according to one embodiment, the polymer material may be characterized as being parylene.

[0009] Additionally, according to one embodiment, the challenge material may be characterized in that it is filled based on the Ni seed layer after forming a Ni seed layer on the polymer coating layer.

[0010] Additionally, according to one embodiment, the Ni seed layer may be characterized as being deposited by electroless deposition.

[0011] Additionally, according to one embodiment, the polymer coating layer may be characterized as having hydrophilic properties.

[0012] Additionally, according to one embodiment, the polymer coating layer may be characterized as having hydrophilicity by performing an oxygen plasma process.

[0013] Additionally, according to one embodiment, the challenge material may be characterized by being filled by electro-deposition.

[0014] Additionally, according to one embodiment, the polymer coating layer may be characterized as being coated by chemical vapor deposition.

[0015] A TGV substrate according to one embodiment of the present invention may include a step of preparing a glass substrate, a step of forming a through glass via (TGV) in the glass substrate, a step of coating a polymer coating layer including a polymer material on an inner wall of the through glass via, and a step of filling a conductive material on the polymer coating layer to fill the through glass via.

[0016] Additionally, according to one embodiment, the Young's Modulus of the polymer coating layer may be characterized as being lower than that of the conductive material and the glass substrate.

[0017] Additionally, in one embodiment, the challenge material may be characterized as being copper.

[0018] Additionally, according to one embodiment, the polymer material may be characterized as being parylene.

[0019] In addition, according to one embodiment, the method for manufacturing a TGV substrate may further include a step of forming a Ni seed layer on a polymer coating layer prior to the step of filling a glass through-via, and the step of filling the glass through-via may be characterized by filling a conductive material based on the Ni seed layer.

[0020] Additionally, according to one embodiment, the step of forming a Ni seed layer may be characterized by depositing the Ni seed layer by electroless deposition.

[0021] Additionally, according to one embodiment, the polymer coating layer may be characterized as having hydrophilic properties.

[0022] Additionally, according to one embodiment, the method for manufacturing a TGV substrate may further include a step of performing an oxygen plasma process on the polymer coating layer prior to the step of forming the Ni seed layer.

[0023] Additionally, according to one embodiment, the step of filling the glass through via may be characterized by filling the conductive material by electro-deposition.

[0024] Additionally, according to one embodiment, the step of coating the polymer coating layer on the inner wall of the glass through-via may be characterized by coating the polymer coating layer by chemical vapor deposition.

[0025] According to the TGV substrate of the present invention and the method for manufacturing the same, a polymer coating layer made of a polymer material is formed on the inner wall of a through glass via (TGV), and a conductive material is filled on the polymer coating layer, thereby alleviating thermal stress caused by a difference in thermal expansion coefficient between the glass substrate and the conductive material.

[0026] Fig. 1 is a cross-sectional view of a TGV substrate according to one embodiment of the present invention.

[0027] Fig. 2 is a flowchart of a TGV substrate manufacturing method according to one embodiment.

[0028] Figure 3 is a flowchart of a TGV substrate manufacturing method according to another embodiment.

[0029] Figures 4 to 6 are EDS (Energy-Dispersive Spectroscopy) images after deposition of parylene according to each example.

[0030] Figure 7 is a graph showing TGA (Thermogravimetric Analysis) analysis after parylene deposition according to one embodiment.

[0031] FIGS. 8 and 9 are SEM (Scanning Electron Microscopy) images of a TGV substrate without parylene deposition according to one embodiment when heated at a high temperature (250°C), and FIGS. 10 and 11 are SEM images of a TGV substrate with parylene deposition according to another embodiment when heated at a high temperature.

[0032] Figures 12 to 23 are graphs showing the results of nanoindentation analysis according to the thickness of the paraffin deposition according to each example.

[0033] Figures 24 to 26 show the results of measuring the contact angle of a water droplet on a TGV substrate according to each embodiment.

[0034] The advantages and features of the present invention, and the methods for achieving them, will become clearer with reference to the embodiments described below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various different forms. These embodiments are provided solely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention. The present invention is defined solely by the scope of the claims.

[0035] The terms used in this specification will be briefly explained, and the present invention will be described in detail.

[0036] The terms used in this invention have been selected from widely used, current terms, taking into account the functions of the invention. However, these terms may vary depending on the intentions of those skilled in the art, precedents, the emergence of new technologies, etc. Furthermore, in certain cases, terms may be arbitrarily selected by the applicant, in which case their meanings will be described in detail in the relevant description of the invention. Therefore, the terms used in this invention should not be defined simply as names, but rather based on their inherent meanings and the overall content of the invention.

[0037] Below, with reference to the attached drawings, embodiments of the present invention are described in detail so that those skilled in the art can easily practice them. Furthermore, in order to clearly explain the present invention, portions irrelevant to the description are omitted in the drawings.

[0038] When a part of the specification is said to "include" a component, this does not mean that it excludes other components, but rather that it may include other components, unless otherwise specifically stated. Furthermore, terms such as "part," "module," and "unit" used in the specification may refer to a unit that processes at least one function or operation.

[0039] Terms including ordinal numbers, such as "first," "second," etc., may be used to describe various components, but the components are not limited by the terms. The terms are used solely to distinguish one component from another. For example, without departing from the scope of the present invention, the first component could be referred to as the second component, and similarly, the second component could also be referred to as the first component. The term "and / or" includes any combination of multiple related items or any one of multiple related items.

[0040]

[0041] Through Glass Via (TGV) technology fills microscopic holes through a glass substrate with conductive material to form electrical connections. It is a key technology for achieving high integration and low-power operation in semiconductor packaging. By utilizing glass substrates with excellent insulating and low dielectric loss characteristics, TGV can be applied to interposers and glass core substrates in next-generation 2.5D and 3D packaging structures.

[0042] However, in conventional TGV structures, differences in the coefficient of thermal expansion (CTE) between the glass substrate and the conductive material can lead to thermal stress concentration within the substrate during temperature changes. This thermal stress can cause structural damage, such as cracks, warpage, or copper pull-out, over long-term use. These problems can be particularly aggravated in high-temperature environments, potentially reducing the reliability and lifespan of the substrate.

[0043] To address the above-described issues, the present invention proposes a TGV structure comprising a polymer coating layer formed on the inner wall of a through-via of a glass substrate and a conductive material filled thereon. The polymer coating layer is uniformly formed on the inner wall of the glass through-via and can function as a buffer layer to alleviate stress caused by differences in thermal expansion coefficients between the glass substrate and the conductive material. This configuration has a relatively simple manufacturing process and can be readily applied to existing TGV structures.

[0044] The TGV substrate according to the present invention effectively alleviates thermal stress through a polymer coating layer, thereby maintaining excellent heat resistance and mechanical stability without cracking or deformation even in high-temperature environments. The TGV substrate according to the present invention can enable long-term, stable operation in fields requiring high integration and high reliability, such as high-performance semiconductors, power semiconductors, and 5G communication devices. Furthermore, the present invention can simultaneously improve durability and productivity compared to prior art.

[0045]

[0046] Hereinafter, the TGV substrate (1) of the present invention will be described.

[0047] Fig. 1 is a cross-sectional view of a TGV substrate (1) of the present invention according to one embodiment.

[0048] Referring to FIG. 1, the TGV substrate (1) of the present invention may include a glass substrate (10), a polymer coating layer (20), and a conductive material (30).

[0049] The glass substrate (10) is a substrate forming the base of the TGV substrate (1) of the present invention, and may be formed of a material having excellent insulating properties and low dielectric loss characteristics. A plurality of through glass vias (TGVs, 15) for electrical connection may be formed on the glass substrate (10), and these vias (15) may be implemented through a processing method such as laser processing, sapphire drilling, injection molding, or chemical etching. The glass substrate (10) may have an appropriate thickness so as to maintain mechanical strength even after the TGV is formed, and the diameter, depth, and aspect ratio of the vias (15) may vary depending on the requirements of the metal filling process and packaging structure.

[0050] A glass penetration via (15) is an opening penetrating a glass substrate (10) and can serve as a passage for electrically connecting both sides of the substrate. The glass penetration via (15) can be processed so that its internal surface condition for subsequent metal filling is maintained in good condition, and its diameter, depth, aspect ratio, etc. can be adjusted according to design specifications and electrical and mechanical requirements. In addition, the internal surface of the via (15) can undergo a pretreatment process such as cleaning and activation to ensure uniform deposition and stable formation of a polymer coating layer (20) described later.

[0051] The polymer coating layer (20) is formed on the inner wall of the glass penetration via (15) of the glass substrate (10), and can function as a buffer layer positioned between the glass substrate (10) and the conductive material (30). The polymer coating layer (20) can suppress distortion or cracking due to temperature change and improve the mechanical stability of the substrate by alleviating thermal stress caused by the difference in thermal expansion coefficient between the glass substrate (10) and the conductive material (30). In particular, the polymer coating layer (20) can minimize deformation of the substrate structure even during long-term operation in a high-temperature environment, thereby increasing the reliability of semiconductor packaging.

[0052] The polymer coating layer (20) may include various polymer materials. For example, materials having excellent insulation and heat resistance, such as polyimide, polytetrafluoroethylene (PTFE), and polyphenylene sulfide (PPS), and having mechanical elasticity that can alleviate stress caused by a difference in thermal expansion coefficient between the glass substrate (10) and the conductive material (30), may be used. These polymer materials may be advantageous in maintaining the structural stability of the substrate in an environment of thermal shock or repeated temperature changes. However, the polymer materials that can be utilized in the present invention are not limited to the examples described above, and various polymer materials that can simultaneously provide thermal stress alleviation and insulation may be applied without limitation.

[0053] In one embodiment, the polymer material of the present invention may be preferably parylene. Parylene is a polymer thin film formed by vaporizing a dimer precursor and then polymerizing it on the surface of a substrate, and can have a uniform thickness and defect-free coating properties. Types of parylene include parylene-C, parylene-N, and parylene-F, and can provide differentiated advantages in chemical resistance, electrical properties, and heat resistance. In particular, the polymer coating layer (20) of the present invention can form a uniform and dense buffer layer on the entire inner wall of a glass through-via (15) by including parylene, thereby preventing copper protrusion in a high-temperature environment and improving the long-term reliability of the substrate.

[0054] The polymer coating layer (20) can be uniformly deposited on the entire inner wall of the glass penetration via (15), and preferably, a chemical vapor deposition (CVD) process can be used as a formation method. The CVD process vaporizes a precursor of a polymer material, then diffuses it to the deposition location and polymerizes it on the surface. Through this method, a uniform polymer coating layer (20) can be formed without defects on the entire surface regardless of the depth and shape of the via (15). Compared to the physical vapor deposition method, the CVD method can coat even the inner corners, and thus can be advantageous in securing excellent adhesion and stability in the seed layer formation and conductive material (30) filling processes described below. However, the method of depositing the polymer coating layer (20) is not limited to CVD, and various deposition methods that can be generally utilized can be utilized without limitation.

[0055] It is preferable that the Young's modulus of the polymer coating layer (20) be lower than that of the conductive material (30) and the glass substrate (10). When the polymer coating layer (20) has relatively low rigidity and high elasticity, it can effectively absorb and disperse the stress caused by the difference in thermal expansion coefficient that occurs between the glass substrate (10) and the conductive material (30) according to temperature change. For example, since the glass substrate (10) has high rigidity and low thermal expansion coefficient, and the conductive material (30) such as copper has a higher thermal expansion coefficient than glass, if direct bonding occurs between the two, a large stress may be concentrated at the interface when the temperature changes. However, when the polymer coating layer (20) having a low Young's modulus exists as a buffer layer, this layer can alleviate stress transfer through deformation, thereby preventing interface damage and structural deformation.

[0056] The conductive material (30) can be positioned on the polymer coating layer (20) and fill the glass through via (15). The conductive material (30) can electrically connect both sides of the substrate by filling the glass through via (15), and any metal that can provide low electrical resistance and excellent reliability can be applied without limitation. The conductive material (30) can include, for example, copper (Cu), aluminum (Al), silver (Ag), gold (Au), etc. Among these, copper has high electrical conductivity and excellent price competitiveness, and can be applied to an electrolytic plating process suitable for mass production, so it can be used as the most preferable conductive material (30).

[0057] The conductive material (30) can be formed on the polymer coating layer (20) by electrolytic plating, electroless plating, deposition, or other methods, and the process conditions can be controlled so that the inside of the via (15) is filled without any gaps. In addition, the conductive material (30) forms a stable metallurgical bond with the polymer coating layer (20), thereby minimizing interface resistance and stably maintaining an electrical connection even in high temperature, high humidity, and thermal shock environments.

[0058]

[0059] Hereinafter, a method for manufacturing the TGV substrate (1) of the present invention will be described.

[0060] Fig. 2 is a flowchart of a method for manufacturing a TGV substrate (1) according to one embodiment.

[0061] Referring to FIG. 2, the method for manufacturing a TGV substrate (1) of the present invention may include a step of preparing a glass substrate (10) (S110), a step of forming a glass through-via (15) on the glass substrate (10) (S120), a step of coating a polymer coating layer (20) including a polymer material on the inner wall of the glass through-via (15) (S130), and a step of filling a conductive material (30) on the polymer coating layer (20) to fill the glass through-via (15) (S140).

[0062] According to one embodiment, the step (S120) of forming a glass through-via (15) is a process of processing a through-hole for electrically connecting both sides of a substrate, and can be performed through various methods such as laser drilling, sapphire drilling, mechanical drilling, sandblasting, chemical etching, etc. The formed glass through-via (15) is designed to be suitable for the deposition and filling processes of the polymer coating layer (20) and the conductive material (30), and the diameter, depth, and aspect ratio can be set in consideration of the required electrical characteristics and mechanical stability. In addition, after the formation of the via (15), a cleaning and pretreatment process can be performed to remove roughness or contaminants on the internal surface.

[0063] The step (S130) of coating the polymer coating layer (20) on the inner wall of the glass through-via (15) is a process of forming a polymer thin film with a uniform thickness on the entire inner surface of the through-hole of the glass substrate (10), and the chemical vapor deposition (CVD) method described above can preferably be used. The CVD process vaporizes a precursor of a polymer material, then diffuses it into the inside of the via (15) and polymerizes it on the inner wall surface, thereby enabling a continuous and dense coating layer to be implemented without defects even in a via (15) structure having a complex shape or a high aspect ratio.

[0064] The step (S140) of filling a glass penetration via (15) with a conductive material (30) is a process of filling a metal to form an electrical connection inside the via (15) on which a polymer coating layer (20) is formed, and can be performed using a metal deposition technique such as electro-deposition or electroless plating. As the conductive material (30), a metal with excellent electrical conductivity, such as copper (Cu), can be preferably used, and by controlling process conditions such as the composition, temperature, and current density of the plating solution, the via (15) can be filled uniformly and defect-free. Through this, the upper and lower surfaces of the substrate can be stably electrically connected, and excellent filling quality and mechanical reliability can be secured even in a via (15) structure with a high aspect ratio.

[0065] Fig. 3 is a flowchart of a method for manufacturing a TGV substrate (1) according to another embodiment.

[0066] Referring to FIG. 3, the method for manufacturing a TGV substrate (1) of the present invention may further include a step (S131) ​​of performing an oxygen plasma process on a polymer coating layer (20) and a step (S132) of forming a Ni (nickel) seed layer on the polymer coating layer (20). These steps may be performed after the polymer coating layer (20) is formed and before filling the glass through-via (15) with a conductive material (30).

[0067] The step (S131) ​​of performing an oxygen plasma process is a surface treatment step performed before filling the conductive material (30) after the polymer coating layer (20) is formed on the inner wall of the glass through-via (15). In the present invention, since a polymer material such as parylene is used as the polymer coating layer (20), its surface may have inherent hydrophobicity, and thus wettability with the metal plating solution may be low when the conductive material (30) is subsequently filled. In this case, the metal layer may be formed discontinuously or an interface peeling phenomenon may occur during the plating process. To prevent this, if an oxygen plasma process is performed, polar functional groups are introduced to the surface of the polymer coating layer (20), and surface energy may be increased, thereby imparting hydrophilicity. As a result, contact with the plating solution is improved in the subsequent seed layer deposition and filling process, and the metal layer (conductive material layer) may be uniformly formed.

[0068] Oxygen plasma processing is a surface treatment method that alters the chemical properties and physical structure of the surface of polymer materials, thereby improving adhesion to subsequent processes. Typically, oxygen plasma generates high-energy oxygen radicals and ions, which remove surface contaminants and simultaneously introduce polar functional groups to the polymer chains. This process increases surface energy and imparts hydrophilicity, which can improve the quality of subsequent processes that require wettability, such as metal deposition and plating.

[0069] In the present invention, the treatment conditions of the oxygen plasma process, such as plasma output, gas flow rate, pressure, and treatment time, can be set to suit the via (15) structure and polymer material properties, and it is preferable that surface modification be performed within a range that does not damage the polymer bulk properties. Under these conditions, the polymer coating layer (20) that has undergone oxygen plasma treatment can provide excellent interfacial adhesion and uniform metal growth properties during subsequent seed layer formation and metal filling processes.

[0070] The step of forming a Ni seed layer (S132) is performed on a polymer coating layer (20) whose surface is activated through oxygen plasma treatment, and may be performed before filling the inside of the glass through-via (15) with a conductive material (30). The step of forming a Ni seed layer forms a continuous, highly conductive metal thin film on the entire inner wall of the via (15), thereby enabling a uniform distribution of current in the subsequent electroplating process and inducing stable growth of the metal layer (conductive material).

[0071] The Ni seed layer is formed so that metal ions can be uniformly adsorbed, reduced, and precipitated on the polymer surface, thereby enabling the initial metal layer to be connected without interruption throughout the via (15). This continuity can prevent the occurrence of gaps or pores due to initial growth failure in a high aspect ratio via (15) structure, thereby ensuring subsequent filling quality.

[0072] Electroless plating can be preferably used as a method for forming a Ni seed layer. Electroless plating is a method of depositing metal ions on the surface through a chemical reduction reaction without using an external power source, and can form a metal layer with a uniform thickness even in complex shapes or deep vias (15). In addition, by controlling the plating solution composition, temperature, pH, reaction time, etc. during the deposition process, a dense and uniform nickel layer can be implemented on the entire inner wall of the via (15), and the Ni seed layer formed in this way can simultaneously serve as an electrode and as an interface adhesion enhancer in a subsequent filling process such as copper electroplating.

[0073]

[0074] Hereinafter, an experimental example of a TGV substrate (1) according to one embodiment of the present invention will be described. In this experimental example, an experiment was conducted on a TGV substrate (1) in which a polymer coating layer (20) was formed using parylene as a polymer material and Cu was filled as a conductive material (30).

[0075] Figures 4 to 6 are EDS (Energy-Dispersive Spectroscopy) images after deposition of parylene according to each example. Specifically, Figure 4 shows deposition of parylene-C, Figure 5 shows deposition of parylene-N, and Figure 6 shows deposition of parylene-F. (a) represents Si, (b) represents F, (c) represents Cu, and (d) represents Ni.

[0076] Referring to FIGS. 4 to 6, it can be seen that the C element is uniformly present inside the glass penetration via (15), indicating that the paraffin is uniformly deposited, and it can also be confirmed that the copper is filled without defects.

[0077] Fig. 7 is a graph analyzing TGA (Thermogravimetric Analysis) after deposition of parylene according to one embodiment. Specifically, Fig. 7 is a graph for confirming the temperature at which thermal decomposition occurs by analyzing a TGV substrate (1) according to the type of each deposited parylene by TGA.

[0078] Referring to Fig. 7, the mass reduction start temperatures of the TGV substrates (1) coated with parylene-C, N, and F, respectively, are 228°C, 254°C, and 362°C, confirming that parylene-F has the best heat resistance, i.e., thermal stability.

[0079] FIGS. 8 and 9 are SEM (Scanning Electron Microscopy) images of a TGV substrate (1) without parylene deposition according to one embodiment when heated at a high temperature (250°C), and FIGS. 10 and 11 are SEM images of a TGV substrate (1) with parylene deposition according to another embodiment when heated at a high temperature.

[0080] Referring to FIGS. 8 to 11, when parylene was not deposited, it was confirmed that copper protruded due to the difference in thermal stress between the glass substrate (10) and copper when heated to a high temperature, but when parylene was deposited, it was confirmed that copper did not protrude even at a high temperature because parylene alleviated the difference in thermal expansion coefficient between copper and the TGV substrate (1).

[0081] Figures 12 to 23 are graphs showing the results of nanoindentation analysis according to the thickness of the parylene deposition according to each example. Specifically, Figures 12 to 14 show the results of measuring the composite hardness (Martens Hardness, HM), the plastic hardness (Indentation Hardness, HIT), and the elastic modulus (Indentation Modulus, EIT) at different temperatures when the parylene deposition thickness is 0, Figures 15 to 17 show the results of measuring the thickness at 1 μm, Figures 18 to 20 show the results of measuring the thickness at 2 μm, and Figures 21 to 23 show the results of measuring the composite hardness (Martens Hardness, HM), the plastic hardness (Indentation Hardness, HIT), and the elastic modulus (Indentation Modulus, EIT) at different temperatures.

[0082] Referring to FIGS. 12 to 23, it can be seen that as the thickness of the paraffin deposition increases, the difference in the coefficient of thermal expansion between the glass substrate (10) and copper is alleviated, thereby reducing the differences in the composite hardness, plasticity warning, and elastic modulus values ​​depending on the temperature.

[0083] Figures 24 to 26 show the results of measuring the contact angle of a water droplet on a TGV substrate (1) according to each embodiment. Figure 24 shows the result before parylene coating, Figure 25 shows the result after parylene coating, and Figure 26 shows the result after performing an oxygen plasma process on the parylene coating layer.

[0084] Referring to FIGS. 24 to 26, it can be confirmed that the case after parylene coating exhibits a higher contact angle (CA) than the case before parylene coating. This may be because the parylene coating exhibits hydrophobicity. On the other hand, when an oxygen plasma process is performed on the parylene coating layer, it can be confirmed that the contact angle is greatly reduced, becoming lower than the case before parylene coating. This may be because the parylene coating is changed to have hydrophilicity through the oxygen plasma process. Therefore, when the oxygen plasma process is performed, the adhesion between the parylene coating layer and Ni can be improved.

[0085]

[0086] Although embodiments of the present invention have been described with reference to the attached drawings, those skilled in the art will appreciate that the present invention can be implemented in other specific forms without altering the technical spirit or essential characteristics of the present invention. Therefore, the embodiments described above should be understood to be illustrative in all respects and not restrictive.

[0087]

[0088] The TGV substrate of the present invention and its manufacturing method form a polymer coating layer made of a polymer material on the inner wall of a through glass via (TGV) and fill a conductive material on the polymer coating layer, thereby alleviating thermal stress caused by a difference in thermal expansion coefficient between the glass substrate and the conductive material, and thus has high industrial applicability.

Claims

1. A glass substrate including a through glass via (TGV); A polymer coating layer coated on the inner wall of the glass through-via, including a polymer material; and A conductive material positioned on the polymer coating layer and filling the glass through-via; TGV board.

2. In paragraph 1, The Young's Modulus of the above polymer coating layer is characterized by being lower than the above challenging material and the glass substrate. TGV board.

3. In paragraph 2, The above challenge material is, Characterized by being copper TGV board.

4. In paragraph 3, The above polymer material is, Characterized by being parylene TGV board.

5. In paragraph 4, The above challenge material is, After forming a Ni seed layer on the polymer coating layer, it is characterized in that it is filled based on the Ni seed layer. TGV board.

6. In paragraph 5, The above Ni seed layer is, characterized by being deposited by electroless deposition TGV board.

7. In paragraph 6, The above polymer coating layer is, Characterized by having hydrophilicity TGV board.

8. In paragraph 7, The above polymer coating layer is, It is characterized by having hydrophilicity by performing an oxygen plasma process. TGV board.

9. In paragraph 1, The above challenge material is, characterized by being filled by electro-deposition TGV board.

10. In paragraph 1, The above polymer coating layer is, Characterized by being coated by chemical vapor deposition TGV board.

11. Step of preparing a glass substrate; A step of forming a through glass via (TGV) in the above glass substrate; A step of coating a polymer coating layer containing a polymer material on the inner wall of the glass through-via; and A step of filling the glass through-via by filling a conductive material on the polymer coating layer; TGV substrate manufacturing method.

12. In paragraph 11, The Young's Modulus of the above polymer coating layer is characterized by being lower than the above challenging material and the glass substrate. TGV substrate manufacturing method.

13. In paragraph 12, The above challenge material is, Characterized by being copper TGV substrate manufacturing method.

14. In paragraph 13, The above polymer material is, Characterized by being parylene TGV substrate manufacturing method.

15. In paragraph 14, A step of forming a Ni seed layer on the polymer coating layer prior to the step of filling the glass through via, further comprising; The step of filling the above glass penetration via is: Characterized in that the conductive material is filled based on the Ni seed layer. TGV substrate manufacturing method.

16. In paragraph 15, The step of forming the above Ni seed layer is: characterized in that the Ni seed layer is deposited by electroless deposition. TGV substrate manufacturing method.

17. In paragraph 16, The above polymer coating layer is, Characterized by having hydrophilicity TGV substrate manufacturing method.

18. In paragraph 17, A step of performing an oxygen plasma process on the polymer coating layer prior to the step of forming the Ni seed layer; further comprising; TGV substrate manufacturing method.

19. In paragraph 11, The step of filling the above glass penetration via is: characterized in that the conductive material is filled by electro-deposition. TGV substrate manufacturing method.

20. In paragraph 11, The step of coating the polymer coating layer on the inner wall of the glass through-via is as follows: Characterized in that the polymer coating layer is coated by chemical vapor deposition. TGV substrate manufacturing method.

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