Electronic device including switching circuit

Abstract

The electronic device disclosed herein may include: a processor including a processing circuit; a radio frequency (RF) transceiver; a radio frequency front end (RFFE) circuit including an RF switching circuit and a coupler; an antenna connected to the coupler; and a filter circuit configured to pass a signal having a frequency lower than a specified frequency among RF signals from the coupler to the RF transceiver. The RF switching circuit may include a series transistor circuit for connecting an input terminal and an output terminal, a shunt transistor circuit for connecting a node between the input terminal and the output terminal and a ground, a first variable resistor circuit for each transistor of the series transistor circuit, and a second variable resistor circuit for each transistor of the shunt transistor circuit.

Description

Electronic device containing a switching circuit

[0001] The descriptions below relate to electronic devices containing switching circuits.

[0002] An electronic device may include a radio frequency front end (RFFE) circuit for transmitting or receiving a signal. The RFFE circuit may include at least one switching circuit. The switching circuit may electrically connect or disconnect two points. The switching circuit may be used to select one of a plurality of paths or to electrically connect a specific component to another component.

[0003] The above information may be provided as background art to aid in understanding the present disclosure. No claim or determination is made as to whether any of the above-described matters constitute prior art related to the present disclosure.

[0004] In embodiments of the present disclosure, an electronic device is provided. The electronic device may include a processor including a processing circuit; a radio frequency (RF) transceiver; a radio frequency front end (RFFE) circuit including an RF switching circuit and a coupler; an antenna connected to the coupler; and a filter circuit configured to pass a signal having a frequency lower than a designated frequency among RF signals from the coupler to the RF transceiver. The RF switching circuit may include a series transistor circuit for connecting an input terminal and an output terminal; a shunt transistor circuit for connecting a node between the input terminal and the output terminal and a ground; a first variable resistor circuit for each transistor of the series transistor circuit, and a second variable resistor circuit for each transistor of the shunt transistor circuit. The RF switching circuit may be controlled to set a first resistance value of the first variable resistor circuit and a second resistance value of the second variable resistor circuit in response to a strength of the signal having a strength greater than or equal to a threshold value, under the control of the processor or the RF transceiver.

[0005] In embodiments of the present disclosure, an electronic device is provided. The electronic device may include a processor including a processing circuit; a radio frequency (RF) transceiver; a radio frequency front end (RFFE) circuit including an RF switching circuit and a coupler; an antenna connected to the coupler; and a filter circuit configured to pass a signal having a frequency lower than a designated frequency among RF signals from the coupler to the RF transceiver. The RF switching circuit may include a series transistor circuit for connecting an input terminal and an output terminal; a shunt transistor circuit for connecting a node between the input terminal and the output terminal and a ground; a delay circuit for delaying an input control signal; and a control circuit for providing a first voltage to a gate of each transistor of the shunt transistor circuit and providing a second voltage to a gate of each transistor of the shunt transistor circuit according to the delayed input control signal. The RF switching circuit may be controlled to set a delay time of the input control signal according to control of the processor or the RF transceiver in response to the intensity of the signal having an intensity greater than a threshold value.

[0006] Figure 1 is a block diagram of an electronic device within a network environment.

[0007] Figure 2 illustrates an example of an electronic device including a radio frequency front end (RFFE) module.

[0008] Figures 3a and 3b are drawings for explaining the delay of an RF switching circuit.

[0009] Figures 4a and 4b show transient waveforms.

[0010] Fig. 5a shows an example of an RF switching circuit.

[0011] Figures 5b and 5c show the voltages at individual points in the RF switching circuit.

[0012] Figures 6a, 6b, 6c, and 6d illustrate examples of delay circuits including a variable resistor circuit and a variable capacitor circuit.

[0013] Figure 7 shows an example of a radio frequency front end (RFFE) module including an antenna switching circuit.

[0014] FIG. 8a, FIG. 8b, FIG. 8c, FIG. 8d, and FIG. 8e are drawings for explaining noise introduced into a receiving path due to switching in an antenna switching circuit.

[0015] Figure 9 shows the operation flow of an electronic device for controlling low-frequency noise.

[0016] The terms used in this disclosure are used only to describe specific embodiments and may not be intended to limit the scope of other embodiments. The singular expression may include plural expressions unless the context clearly indicates otherwise. Terms used herein, including technical or scientific terms, may have the same meaning as commonly understood by those of ordinary skill in the art described in this disclosure. Terms defined in general dictionaries among the terms used in this disclosure may be interpreted as having the same or similar meaning in the context of the relevant technology, and shall not be interpreted in an idealized or overly formal sense unless explicitly defined in this disclosure. In some cases, even if a term is defined in this disclosure, it cannot be interpreted to exclude embodiments of the present disclosure.

[0017] The various embodiments of the present disclosure described below illustrate a hardware-based approach as an example. However, since the various embodiments of the present disclosure include techniques utilizing both hardware and software, the various embodiments of the present disclosure do not exclude a software-based approach.

[0018] Terms referring to parts of electronic devices used in the following description (e.g., communication module, wireless communication module, substrate, PCB (printed circuit board), FPCB (flexible PCB), module, antenna, antenna element, circuit, processor, chip, component, device), terms referring to RF-related parts (FEM (front end module0), PAM (power amplifier module), FEMid (FEM including duplexer), PAMid (power amplifier module including duplexer), LPAMid (low noise amplifier PAM including duplexer), RFFE (radio frequency front end)), RFIC (radio frequency integrated circuit)), terms referring to the shape of parts (e.g., structure, structure, support, contact, or protrusion), terms referring to connections between structures (e.g., connection, contact, support, contact structure, conductive member, or assembly), terms referring to circuits (e.g., PCB, FPCB, signal line, feeding line, data line, RF signal line, antenna line, signal path, RF path, RF modules, RF circuits, splitters, dividers, couplers, or combiners are examples for convenience of explanation. Therefore, the present disclosure is not limited to the terms described below, and other terms having equivalent technical meanings may be used. In addition, terms such as '... part', '... device', '... object', or '... body' used below may mean at least one shape structure or a unit that processes a function.

[0019] In addition, in the present disclosure, expressions such as "more than" or "less than" may be used to determine whether a specific condition is satisfied or fulfilled, but this is merely a description for expressing an example and does not exclude descriptions such as "more than" or "less than." A condition described as "more than" may be replaced with "more than," a condition described as "less than" may be replaced with "less than," and a condition described as "more than and less than" may be replaced with "more than and less than." In addition, hereinafter, "A" to "B" mean at least one of elements from A (including A) to B (including B). hereinafter, "C" and / or "D" mean at least one of "C" or "D," that is, including {"C", "D", "C" and "D"}.

[0020] Figure 1 is a block diagram of an electronic device within a network environment.

[0021] Referring to FIG. 1, in a network environment (100), an electronic device (101) may communicate with an electronic device (102) via a first network (198) (e.g., a short-range wireless communication network), or may communicate with at least one of an electronic device (104) or a server (108) via a second network (199) (e.g., a long-range wireless communication network). According to one embodiment, the electronic device (101) may communicate with the electronic device (104) via the server (108). According to one embodiment, the electronic device (101) may include a processor (120), a memory (130), an input module (150), an audio output module (155), a display module (160), an audio module (170), a sensor module (176), an interface (177), a connection terminal (178), a haptic module (179), a camera module (180), a power management module (188), a battery (189), a communication module (190), a subscriber identification module (196), or an antenna module (197). In some embodiments, the electronic device (101) may omit at least one of these components (e.g., the connection terminal (178)), or may have one or more other components added. In some embodiments, some of these components (e.g., the sensor module (176), the camera module (180), or the antenna module (197)) may be integrated into one component (e.g., the display module (160)).

[0022] The processor (120) may, for example, execute software (e.g., a program (140)) to control at least one other component (e.g., a hardware or software component) of the electronic device (101) connected to the processor (120) and perform various data processing or calculations. According to one embodiment, as at least a part of the data processing or calculation, the processor (120) may store a command or data received from another component (e.g., a sensor module (176) or a communication module (190)) in a volatile memory (132), process the command or data stored in the volatile memory (132), and store the resulting data in a non-volatile memory (134). According to one embodiment, the processor (120) may include a main processor (121) (e.g., a central processing unit or an application processor) or a secondary processor (123) (e.g., a graphics processing unit, a neural processing unit (NPU), an image signal processor, a sensor hub processor, or a communication processor)) that can operate independently or together therewith. For example, if the electronic device (101) includes a main processor (121) and a secondary processor (123), the secondary processor (123) may be configured to use less power than the main processor (121) or to be specialized for a specified function. The secondary processor (123) may be implemented separately from the main processor (121) or as a part thereof.

[0023] The auxiliary processor (123) may control at least a portion of functions or states associated with at least one component (e.g., a display module (160), a sensor module (176), or a communication module (190)) of the electronic device (101), for example, on behalf of the main processor (121) while the main processor (121) is in an inactive (e.g., sleep) state, or together with the main processor (121) while the main processor (121) is in an active (e.g., application execution) state. In one embodiment, the auxiliary processor (123) (e.g., an image signal processor or a communication processor) may be implemented as a part of another functionally related component (e.g., a camera module (180) or a communication module (190)). In one embodiment, the auxiliary processor (123) (e.g., a neural network processing unit) may include a hardware structure specialized for processing artificial intelligence models. The artificial intelligence models may be generated through machine learning. This learning can be performed, for example, on the electronic device (101) itself where the artificial intelligence model is executed, or can be performed through a separate server (e.g., server (108)). The learning algorithm can include, for example, supervised learning, unsupervised learning, semi-supervised learning, or reinforcement learning, but is not limited to the examples described above. The artificial intelligence model can include multiple artificial neural network layers.The artificial neural network may be one of a deep neural network (DNN), a convolutional neural network (CNN), a recurrent neural network (RNN), a restricted Boltzmann machine (RBM), a deep belief network (DBN), a bidirectional recurrent deep neural network (BRDNN), a deep Q-network, or a combination of two or more of the above, but is not limited to the examples described above. In addition to, or alternatively to, a hardware structure, an artificial intelligence model may include a software structure.

[0024] The memory (130) can store various data used by at least one component (e.g., processor (120) or sensor module (176)) of the electronic device (101). The data can include, for example, software (e.g., program (140)) and input data or output data for commands related thereto. The memory (130) can include volatile memory (132) or non-volatile memory (134).

[0025] The program (140) may be stored as software in the memory (130) and may include, for example, an operating system (142), middleware (144), or an application (146).

[0026] The input module (150) can receive commands or data to be used in a component of the electronic device (101) (e.g., a processor (120)) from an external source (e.g., a user) of the electronic device (101). The input module (150) can include, for example, a microphone, a mouse, a keyboard, a key (e.g., a button), or a digital pen (e.g., a stylus pen).

[0027] The audio output module (155) can output audio signals to the outside of the electronic device (101). The audio output module (155) can include, for example, a speaker or a receiver. The speaker can be used for general purposes, such as multimedia playback or recording playback. The receiver can be used to receive incoming calls. In one embodiment, the receiver can be implemented separately from the speaker or as part of the speaker.

[0028] The display module (160) can visually provide information to an external party (e.g., a user) of the electronic device (101). The display module (160) may include, for example, a display, a holographic device, or a projector and a control circuit for controlling the device. In one embodiment, the display module (160) may include a touch sensor configured to detect a touch, or a pressure sensor configured to measure the intensity of a force generated by the touch.

[0029] The audio module (170) can convert sound into an electrical signal, or vice versa, convert an electrical signal into sound. According to one embodiment, the audio module (170) can acquire sound through the input module (150), output sound through the sound output module (155), or an external electronic device (e.g., electronic device (102)) (e.g., speaker or headphone) directly or wirelessly connected to the electronic device (101).

[0030] The sensor module (176) can detect the operating status (e.g., power or temperature) of the electronic device (101) or the external environmental status (e.g., user status) and generate an electrical signal or data value corresponding to the detected status. According to one embodiment, the sensor module (176) can include, for example, a gesture sensor, a gyro sensor, a barometric pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a proximity sensor, a color sensor, an IR (infrared) sensor, a biometric sensor, a temperature sensor, a humidity sensor, or an illuminance sensor.

[0031] The interface (177) may support one or more designated protocols that may be used to directly or wirelessly connect the electronic device (101) with an external electronic device (e.g., the electronic device (102)). In one embodiment, the interface (177) may include, for example, a high definition multimedia interface (HDMI), a universal serial bus (USB) interface, an SD card interface, or an audio interface.

[0032] The connection terminal (178) may include a connector through which the electronic device (101) may be physically connected to an external electronic device (e.g., electronic device (102)). According to one embodiment, the connection terminal (178) may include, for example, an HDMI connector, a USB connector, an SD card connector, or an audio connector (e.g., a headphone connector).

[0033] A haptic module (179) can convert electrical signals into mechanical stimuli (e.g., vibration or movement) or electrical stimuli that a user can perceive through tactile or kinesthetic sensations. In one embodiment, the haptic module (179) can include, for example, a motor, a piezoelectric element, or an electrical stimulation device.

[0034] The camera module (180) can capture still images and videos. According to one embodiment, the camera module (180) may include one or more lenses, image sensors, image signal processors, or flashes.

[0035] The power management module (188) can manage power supplied to the electronic device (101). According to one embodiment, the power management module (188) can be implemented, for example, as at least a part of a power management integrated circuit (PMIC).

[0036] A battery (189) may power at least one component of the electronic device (101). In one embodiment, the battery (189) may include, for example, a non-rechargeable primary battery, a rechargeable secondary battery, or a fuel cell.

[0037] The communication module (190) may support the establishment of a direct (e.g., wired) communication channel or a wireless communication channel between the electronic device (101) and an external electronic device (e.g., electronic device (102), electronic device (104), or server (108)), and the performance of communication through the established communication channel. The communication module (190) may operate independently from the processor (120) (e.g., application processor) and may include one or more communication processors that support direct (e.g., wired) communication or wireless communication. According to one embodiment, the communication module (190) may include a wireless communication module (192) (e.g., a cellular communication module, a short-range wireless communication module, or a global navigation satellite system (GNSS) communication module) or a wired communication module (194) (e.g., a local area network (LAN) communication module, or a power line communication module). Among these communication modules, the corresponding communication module can communicate with an external electronic device (104) via a first network (198) (e.g., a short-range communication network such as Bluetooth, wireless fidelity (WiFi) direct, or infrared data association (IrDA)) or a second network (199) (e.g., a long-range communication network such as a legacy cellular network, a 5G network, a next-generation communication network, the Internet, or a computer network (e.g., a LAN or WAN)). These various types of communication modules can be integrated into a single component (e.g., a single chip) or implemented as multiple separate components (e.g., multiple chips). The wireless communication module (192) can verify or authenticate the electronic device (101) within a communication network such as the first network (198) or the second network (199) by using subscriber information (e.g., an international mobile subscriber identity (IMSI)) stored in the subscriber identification module (196).

[0038] The wireless communication module (192) can support 5G networks and next-generation communication technologies following the 4G network, such as NR access technology (new radio access technology). NR access technology can support high-speed transmission of high-capacity data (eMBB (enhanced mobile broadband)), minimizing terminal power and connecting multiple terminals (mMTC (massive machine type communications)), or high reliability and low latency (URLLC (ultra-reliable and low-latency communications)). The wireless communication module (192) can support, for example, a high-frequency band (e.g., mmWave band) to achieve a high data transmission rate. The wireless communication module (192) can support various technologies for securing performance in a high-frequency band, such as beamforming, massive multiple-input and multiple-output (MIMO), full dimensional MIMO (FD-MIMO), array antenna, analog beam-forming, or large scale antenna. The wireless communication module (192) can support various requirements specified in the electronic device (101), an external electronic device (e.g., the electronic device (104)), or a network system (e.g., the second network (199)). According to one embodiment, the wireless communication module (192) can support a peak data rate (e.g., 20 Gbps or more) for eMBB realization, a loss coverage (e.g., 164 dB or less) for mMTC realization, or a U-plane latency (e.g., 0.5 ms or less for downlink (DL) and uplink (UL), or 1 ms or less for round trip) for URLLC realization.

[0039] The antenna module (197) can transmit or receive signals or power to or from an external device (e.g., an external electronic device). In one embodiment, the antenna module (197) may include an antenna including a radiator formed of a conductor or a conductive pattern formed on a substrate (e.g., a PCB). In one embodiment, the antenna module (197) may include a plurality of antennas (e.g., an array antenna). In this case, at least one antenna suitable for a communication method used in a communication network, such as the first network (198) or the second network (199), may be selected from the plurality of antennas by, for example, the communication module (190). A signal or power may be transmitted or received between the communication module (190) and an external electronic device through the selected at least one antenna. In some embodiments, in addition to the radiator, another component (e.g., a radio frequency integrated circuit (RFIC)) may be additionally formed as a part of the antenna module (197).

[0040] According to various embodiments, the antenna module (197) may form a mmWave antenna module. According to one embodiment, the mmWave antenna module may include a printed circuit board, an RFIC disposed on or adjacent a first side (e.g., a bottom side) of the printed circuit board and capable of supporting a designated high-frequency band (e.g., a mmWave band), and a plurality of antennas (e.g., an array antenna) disposed on or adjacent a second side (e.g., a top side or a side side) of the printed circuit board and capable of transmitting or receiving signals in the designated high-frequency band.

[0041] At least some of the above components can be interconnected and exchange signals (e.g., commands or data) with each other via a communication method between peripheral devices (e.g., a bus, GPIO (general purpose input and output), SPI (serial peripheral interface), or MIPI (mobile industry processor interface)).

[0042] According to one embodiment, commands or data may be transmitted or received between the electronic device (101) and an external electronic device (104) via a server (108) connected to a second network (199). Each of the external electronic devices (102 or 104) may be the same or a different type of device as the electronic device (101). According to one embodiment, all or part of the operations executed in the electronic device (101) may be executed in one or more of the external electronic devices (102, 104, or 108). For example, when the electronic device (101) is to perform a certain function or service automatically or in response to a request from a user or another device, the electronic device (101) may, instead of or in addition to executing the function or service itself, request one or more external electronic devices to perform the function or at least a part of the service. One or more external electronic devices that receive the request may execute at least a portion of the requested function or service, or an additional function or service related to the request, and transmit the result of the execution to the electronic device (101). The electronic device (101) may process the result as is or additionally and provide it as at least a portion of a response to the request. For this purpose, cloud computing, distributed computing, mobile edge computing (MEC), or client-server computing technology may be used, for example. The electronic device (101) may provide an ultra-low latency service by using distributed computing or mobile edge computing, for example. In another embodiment, the external electronic device (104) may include an Internet of Things (IoT) device. The server (108) may be an intelligent server using machine learning and / or a neural network. According to one embodiment, the external electronic device (104) or the server (108) may be included in the second network (199).The electronic device (101) can be applied to intelligent services (e.g., smart home, smart city, smart car, or healthcare) based on 5G communication technology and IoT-related technology.

[0043] FIG. 2 illustrates an example of an electronic device (e.g., electronic device (101)) including a radio frequency front end (RFFE) module.

[0044] Referring to FIG. 2, the electronic device (101) may include a processor (210), an RF transceiver (220), an RFFE (radio frequency front end) module (230), and / or an antenna (290). The electronic device (101) may include the processor (210). The processor (210) may include, for example, at least one of an AP (application processor) (e.g., the main processor (121) of FIG. 1)) or a CP (communication processor) (e.g., the auxiliary processor (123) of FIG. 1). For example, the processor (210) may include an AP and a CP. For example, the processor may include an AP. For example, the processor (210) may include a CP. The processor (210) may control the RF transceiver (220) via a control interface (211). For example, the processor (210) may generate a baseband signal. The processor (210) can control the RF transceiver (220) to process the generated baseband signal. The processor (210) can transmit a signal (213a) (e.g., analog data or digital data). For example, the signal (213a) can be a communication signal to be transmitted to an external electronic device (e.g., a base station, a satellite, a terminal, an electronic device (102), an electronic device (104), or a server (108)). The processor (210) can control the RF transceiver (220) to transmit the signal via an antenna (290). The processor (210) can receive a signal (213b) (e.g., analog data or digital data). For example, the signal (213b) can be a signal received from an external electronic device (e.g., a base station, a satellite, a terminal, an electronic device (102), an electronic device (104), or a server (108)) via an antenna (290). As another example, signal (213b) may include a signal for measuring transmission power (e.g., a feedback signal).The processor (210) can control the RF transceiver (220) to receive a signal (213b). For example, the processor (210) can obtain a feedback signal through one port (e.g., a feedback receive port (FBRX)) of the RF transceiver (220).

[0045] The electronic device (101) may include an RF transceiver (220). For example, the RF transceiver (220) may be implemented as a single chip (e.g., an RFIC chip) or as part of a single package. The RF transceiver (220) may include a digital to analog converter (DAC) for converting a digital signal to an analog signal. The RF transceiver (220) may include a mixer and an oscillator (e.g., a local oscillator (LO)) for up-conversion. The RF transceiver (220) may convert a baseband signal generated by the processor (210) into an RF signal. For example, the RF transceiver (220) may provide an RF transmission signal (261a) to the RFFE module (230). The RF transceiver (220) may include an analog to digital converter (ADC) for converting an analog signal into a digital signal. The RF transceiver (220) may include a mixer and an oscillator for down-conversion. The RF transceiver (220) may convert an RF signal received from the antenna (290) into a baseband signal so that the processor (210) can process it. For example, the RFFE module (230) may provide an RF receive signal (261b) to the RF transceiver (220). The RF transceiver (220) may include one or more transmit ports. The RF transceiver (220) may include one or more receive ports. The RF transceiver (220) may receive a feedback signal provided from a component (e.g., a coupler (280)) of the RFFE module (230) that is electrically connected to the antenna (290). For example, the RF transceiver (220) may include a feedback receive port (FBRX) for a feedback signal.The RF transceiver (220) can control at least a portion of the RFFE module (230) via a control interface (223) (e.g., mobile industry processor interface (MIPI)). For example, the RF transceiver (220) can transmit a control signal to a controller (237) of the RFFE module (230) via the control interface (223).

[0046] The electronic device (101) may include one or more RFFE modules to support various frequency bands. For example, the electronic device (101) may include an RFFE module (230). The RFFE module (230) may be referred to as an RFFE circuit. Wireless communication systems are evolving toward supporting higher data rates to meet the ever-increasing traffic demands of wireless data. To support various frequency combinations, components of a plurality of transmit (TX) / receive (RX) modules (e.g., RFFE module (230)) connected to an RF transceiver (220) may be arranged. For example, the RFFE module (230) may include a controller (237). The controller (237) may be configured to control components of the RFFE module (230) via a control interface (e.g., control interface (223)) with the processor (210) and / or the RF transceiver (220). The RFFE module (230) may include a power amplifier (PA) (not shown) for transmission. For example, the RFFE module (230) may be a PAMid including a power amplifier and RF components (e.g., a duplexer, a filter, or a switch) for transmission signal processing. For example, the RFFE module (230) may be an LPAMid including the power amplifier and a low noise amplifier (LNA). The RFFE module (230) may be configured to transmit a transmission signal (e.g., an RF transmission signal 261a) from the RF transceiver (220) to the antenna (290). The RF transmission signal (261a) from the RF transceiver (220) may be amplified by the power amplifier. The amplified RF signal may be radiated into the air through the antenna (290). The RFFE module (230) may include components for a reception path in addition to components for a transmission path.The RFFE module (230) may include a low noise amplifier (LNA) for reception. The RFFE module (230) may be configured to process a signal received through the antenna (290) and transmit the processed signal (e.g., RF reception signal (261b)) to the RF transceiver (220).

[0047] The RFFE module (230) may include an RF switching circuit (270). The RFFE module (230) may support one or more frequency bands. For example, the RF switching circuit (270) may be used to transmit or receive a signal of at least one frequency band among the one or more frequency bands. The RFFE module (230) may support signal processing in one or more signal paths. For example, the RF switching circuit (270) may be used to select a transmission path or a reception path. The RF switching circuit (270) may be controlled by a controller (237) within the RFFE module (230). In one embodiment, the operation of the RF switching circuit (270) may be performed under the control of the processor (210) or the RF transceiver (220). A MIPI signal may be provided to the controller (237) under the control of the processor (210) or the RF transceiver (220). The controller (237) can control the RF switching circuit (270) according to the MIPI signal. In the RF system, low-frequency noise may be generated depending on the operation of the RF switching circuit (270). As the state of the RF switching circuit (270) repeats an open state or a closed state, low-frequency noise (e.g., a noise signal having a frequency of less than about 100 MHz) may be generated. The low-frequency noise may be induced in a component (e.g., a PA, an LNA, a filter, a duplexer) or an element through a transmission path or a reception path within the RFFE module (230). Since the transmission path processes a signal of relatively high intensity, but the reception path processes a signal of relatively low intensity, if noise generated in the transmission path flows into the reception path, the communication performance may be degraded due to the noise. In embodiments of the present disclosure, a technique for reducing noise caused by the RF switching circuit (270) is described.

[0048] An electronic device (101) according to embodiments of the present disclosure may be configured to measure noise in an RFFE module (230) and attenuate noise in an RF switching circuit (270) within the RFFE module (230).

[0049] In one embodiment, to measure the noise, the electronic device (101) may include a filter circuit (250). The filter circuit (250) may be positioned between a coupler (280) for branching a signal and an RF transceiver (220) including a detection circuit for magnitude measurement. The filter circuit (250) may be used to measure low-frequency noise (e.g., less than about 100 MHz) that is different from an operating frequency (e.g., greater than about 600 MHz). The filter circuit (250) may be configured to pass only frequencies lower than a specified frequency. For example, the filter circuit (250) may be a low pass filter (LPF). As an example, the filter circuit (250) may be an LPF configured to pass signals with a frequency lower than about 100 MHz. The electronic device (101) may include at least one switching circuit to selectively measure the noise. The at least one switching circuit may include a first switching circuit (281a) and a second switching circuit (281b). The first switching circuit (281a) may be configured to selectively connect the coupler (280) to either the filter circuit (250) or the feedback line (288). The second switching circuit (281b) may be configured to selectively connect the coupler (280) to either the RF transceiver (220) or the feedback line (288).

[0050] When the electronic device (101) wants to measure noise in the RFFE module (230), it can control the first switching circuit (281a) and the second switching circuit (281b). Through the first switching circuit (281a) and the second switching circuit (281b), the filter circuit (250) can be electrically connected between the coupler (280) and the RF transceiver (220). The filter circuit (250) can be configured to pass only signals below a specific frequency (e.g., about 100 MHz) among the feedback signals from the coupler (280) to the RF transceiver (220). The RF transceiver (220) can measure the intensity of the passed signal. The RF transceiver (220) can determine the intensity of the noise based on the result of the measurement. The RF transceiver (220) can determine whether the intensity of the noise is greater than or equal to a threshold value. For example, the RF transceiver (220) may transmit a control signal to the RFFE module (230) based on a determination that the noise intensity is greater than or equal to a threshold value. Since the noise intensity is greater than or equal to the threshold value, the control signal may be transmitted to the RFFE module (230) to alleviate the noise intensity. The control signal may be used to change a setting value of a parameter in the RF switching circuit (270) of the RFFE module (230). The RF transceiver (220) may maintain the current setting based on a determination that the noise intensity is less than the threshold value. The RF transceiver (220) may not transmit a control signal to the RFFE module (230) to change the setting value of the parameter in the RF switching circuit (270).

[0051] According to embodiments of the present disclosure, as the setting value of a parameter in the RF switching circuit (270) is changed, noise in the RF switching circuit (270) can be reduced. The RF switching circuit (270) can include a plurality of transistors. The RF switching circuit (270) can be configured to transmit a signal in a desired direction depending on whether each of the plurality of transistors is turned on or off. According to one embodiment, the setting value of the parameter in the RF switching circuit (270) can be a delay time of a gate voltage applied to each transistor of the RF switching circuit (270). The state of the transistor can be changed from an on state to an off state or from an off state to an on state. When the state is changed, a delay may occur due to the time for which the transistor remains in a specific state. As the time for the delay (hereinafter, referred to as the delay time) is changed, noise in the RF switching circuit (270) can be reduced. The relationship between the delay time and noise is described in detail through FIGS. 3A and 3B. In addition, according to one embodiment, the setting value of the parameter in the RF switching circuit (270) may be a transient section of the gate voltage applied to each transistor of the RF switching circuit (270). For example, the more abrupt the change in the waveform in the transient section, the greater the influence due to noise may be. The more abrupt the change in the waveform, the shorter the transient section may be. For example, the more gradual the change in the waveform in the transient section, the less the influence due to noise may be. The more gradual the change in the waveform, the longer the transient section may be. Therefore, the longer the transient section is set, the less noise in the RF switching circuit (270) may be. The relationship between the transient section and noise is described in detail through FIGS. 4A and 4B.

[0052] FIG. 3a and FIG. 3b are drawings for explaining the delay of an RF switching circuit (e.g., RF switching circuit (270)).

[0053] Referring to FIG. 3A, an RF switching circuit (270) may be configured to connect or disconnect between two points. The RF switching circuit (270) may include a plurality of transistors. The RF switching circuit (270) may include a series transistor circuit (301) arranged in series between the two points and a shunt transistor circuit (302) arranged between a node between the two points and ground. The series transistor circuit (301) may be referred to as a series switch. The shunt transistor circuit (302) may be referred to as a shunt switch. Hereinafter, for convenience of description, a transistor circuit including one switch is exemplified in the present disclosure, but each transistor circuit may include a plurality of transistors. The series transistor circuit (301) may include a plurality of series transistors. The plurality of series transistors may be arranged in series between the two points. The shunt transistor circuit (302) may include a plurality of shunt transistors. The above plurality of shunt transistors can be arranged in series between the node and ground between the two points.

[0054] The state of the RF switching circuit (270) can be changed from an open state (e.g., a first state (311)) to a closed state (e.g., a third state (313)). In the first state (311), the shunt transistor circuit (302) can operate in a closed state. In the first state (311), the series transistor circuit (301) can operate in an open state. The shunt transistor circuit (302) can operate in a closed state for a predetermined period of time. The series transistor circuit (301) can operate in an open state for a predetermined period of time. The predetermined period of time can be referred to as a shunt-dwell. In the second state (312), the shunt transistor circuit (302) can operate in an open state. In the second state (312), the series transistor circuit (301) can operate in an open state. Both the series transistor circuit (301) and the shunt transistor circuit (302) can operate in an open state for a predetermined period of time. The above period of time may be referred to as open-dwell. In the third state (313), the series transistor circuit (301) may operate in a closed state. In the third state (313), the shunt transistor circuit (302) may operate in an open state. The series transistor circuit (301) may operate in a closed state for a period of time. The shunt transistor circuit (302) may operate in an open state for a period of time. The above period of time may be referred to as series-dwell.

[0055] When the state of the RF switching circuit (270) changes from an open state (e.g., a first state (311)) to a closed state (e.g., a third state (313)), the open delay time between the first state (311) and the second state (312) or the series delay time between the second state (312) and the third state (313) can be utilized. The RFFE module (230) can reduce frequency noise by adjusting the delay time within the timing specification when changing the state of the RF switching circuit (270) from the open state to the closed state. As the open-dwell increases, the transient time increases and the waveform changes slowly, but if the operating time becomes excessively long, the latency may increase. Based on this trade-off relationship, an optimal delay time for the RF switching circuit (270) can be set.

[0056] Referring to FIG. 3b, the state of the RF switching circuit (270) can be changed from a closed state (e.g., a first state (361)) to an open state (e.g., a third state (363)). In the first state (361), the series transistor circuit (301) can operate in a closed state. In the first state (361), the shunt transistor circuit (302) can operate in an open state. The series transistor circuit (301) can operate in a closed state for a predetermined period of time. The shunt transistor circuit (302) can operate in an open state for a predetermined period of time. The predetermined period of time can be referred to as a series-dwell. In the second state (362), the shunt transistor circuit (302) can operate in an open state. In the second state (362), the series transistor circuit (301) can operate in an open state. Both the series transistor circuit (301) and the shunt transistor circuit (302) can operate in an open state for a predetermined period of time. The above period of time may be referred to as an open-dwell. In the third state (363), the shunt transistor circuit (302) may operate in a closed state. In the third state (363), the series transistor circuit (301) may operate in an open state. The shunt transistor circuit (302) may operate in a closed state for a period of time. The series transistor circuit (301) may operate in an open state for a period of time. The above period of time may be referred to as a shunt-dwell.

[0057] When the state of the RF switching circuit (270) changes from a closed state (e.g., a first state (361)) to an open state (e.g., a third state (363)), the open delay time between the first state (361) and the second state (362) or the shunt delay time between the second state (362) and the third state (363) can be utilized. The RFFE module (230) can reduce frequency noise by adjusting the delay time within the timing specification when changing the state of the RF switching circuit (270) from the closed state to the open state. As the open-dwell increases, the transient time increases and the waveform changes slowly, but if the operating time becomes excessively long, the latency may increase. Based on this trade-off relationship, an optimal delay time for the RF switching circuit (270) can be set.

[0058] Figures 4a and 4b illustrate transient waveforms. The RF switching circuit (270) may include a series transistor circuit (e.g., a series transistor circuit (301)) and a shunt transistor circuit (e.g., a shunt transistor circuit (302)).

[0059] Referring to FIG. 4A, a graph (401) represents a waveform of a gate voltage having a first transient time. The horizontal axis of the graph (401) represents time (unit: seconds), and the vertical axis of the graph (401) represents a gate voltage (unit: V (voltage)). A first line (411) represents a gate voltage applied to each transistor of a series transistor circuit (301). A second line (412) represents a gate voltage applied to each transistor of a shunt transistor circuit (302). A graph (402) represents a waveform of a gate voltage having a second transient time. The second transient time may be longer than the first transient time. The horizontal axis of the graph (402) represents time (unit: seconds), and the vertical axis of the graph (402) represents a gate voltage (unit: V). A first line (421) represents a gate voltage applied to each transistor of a series transistor circuit (301). The second line (422) represents the gate voltage applied to each transistor of the shunt transistor circuit (302).

[0060] Referring to graphs (401) and (402), the first line (411) may increase rapidly in the transition section (415), while the first line (421) may increase gradually in the transition section (425). Referring to graphs (401) and (402), the second line (412) may decrease rapidly in the transition section (415), while the second line (422) may decrease gradually in the transition section (425).

[0061] Referring to FIG. 4B, graph (451) represents the noise level of the RF switching circuit (270) having the first transient time. The horizontal axis of graph (451) may represent frequency (unit: GHz (gigahertz)) and the vertical axis of graph (451) may represent noise level (e.g., dBm (decibel milliwatt)). Graph (452) represents the noise level of RF switching circuit (270) having the second transient time. The horizontal axis of graph (452) may represent frequency (unit: GHz) and the vertical axis of graph (452) may represent noise level (e.g., dBm). Referring to graph (451) and graph (452), it can be confirmed that the noise level relatively decreases as the transient time becomes longer.

[0062] The RF switching circuit (270) must complete switching according to the switching time standard set according to the communication standard used in the RFFE module (230). The switching of the RF switching circuit (270) must be performed within a specific time (e.g., approximately several nanoseconds (ns) to several microseconds (us)). However, if the transient time is set too short and the waveform changes abruptly, low-frequency noise may be generated significantly. Therefore, the RFFE module (230) according to embodiments of the present disclosure can change the setting values ​​of parameters so that the transient waveform is formed smoothly within the range set according to the standard, according to the control of the processor (210) or the RF transceiver (220). According to one embodiment, the transient time can be set to be long by changing the resistance value connected to the gate of the transistor. As a non-limiting example, the lower the resistance value of the variable resistance circuit, the shorter the transient time can be. As the transient time becomes shorter, a gate voltage with a rapid change (i.e., a gate voltage with a large voltage slope versus time) can be applied to the transistor's gate. The higher the resistance value of the variable resistor circuit, the longer the transient time can be. As the transient time becomes longer, a gate voltage with a gentle change (i.e., a gate voltage with a small voltage slope versus time) can be applied to the transistor's gate.

[0063] FIG. 5a shows an example of an RF switching circuit (e.g., RF switching circuit (270)).

[0064] Referring to FIG. 5A, the RF switching circuit (270) may be configured to electrically connect or disconnect a first point (501) and a second point (502). The RF switching circuit (270) may include a series transistor circuit (510) and a shunt transistor circuit (520). For the series transistor circuit (510), reference may be made to the description of the series transistor circuit (301) of FIGS. 3A and 3B. For the shunt transistor circuit (520), reference may be made to the description of the shunt transistor circuit (302) of FIGS. 3A and 3B. The series transistor circuit (510) may include transistors arranged in series between the first point (501) and the second point (502). The shunt transistor circuit (520) may include transistors arranged in series between the first point (501) and ground.

[0065] The RF switching circuit (270) may include a control circuit (530). The control circuit (530) may control a first voltage (531a) for the gate of each transistor of the series transistor circuit (510). The control circuit (530) may control a second voltage (531b) for the gate of each transistor of the shunt transistor circuit (520). The control circuit (530) may generate a first voltage (531a) based on an input signal and output the first voltage (531a). The first voltage (531a) may be provided to the gate of each transistor of the series transistor circuit (510) through a first variable resistor circuit (560a). The waveform of the first voltage (531a) may be modified through the first variable resistor circuit (560a). A gate voltage according to the modified waveform may be supplied to the gate of each transistor of the series transistor circuit (510). The control circuit (530) can generate a second voltage (531b) based on an input signal and output the second voltage (531b). The second voltage (531b) can be provided to the gate of each transistor of the shunt transistor circuit (510) through the second variable resistor circuit (560b). The waveform of the second voltage (531b) can be modified through the second variable resistor circuit (560b). A gate voltage according to the modified waveform can be supplied to the gate of each transistor of the shunt transistor circuit (520). According to one embodiment, the resistance value of the variable resistor circuit (e.g., the first variable resistor circuit (560a), the second variable resistor circuit (560b)) connected to each transistor can be set according to the control of a processor (e.g., the processor (210)) or an RF transceiver (e.g., the RF transceiver (220)). The resistance value can affect the waveform of the gate voltage in a transient time.In terms of supplying a voltage corresponding to on or off to each gate, the control circuit (530) may be referred to as a voltage supply circuit, a voltage control circuit, a voltage provider, a level shifter, a level shifter circuit, a voltage level circuit, an on-off control circuit, and / or equivalent technical terms.

[0066] An input control signal (551) can be obtained through decoding (550) of a control signal (e.g., a signal received through a MIPI interface) provided to the RFFE module (230). The input control signal can be transmitted to a delay circuit (540). The input control signal can be used to control on or off of each transistor of the series transistor circuit (510) and / or the shunt transistor circuit (520). The delay circuit (540) can delay the input control signal. The delay circuit (540) can provide the delayed input control signal to the control circuit (530). According to one embodiment, the delay time in the delay circuit (540) can be set according to the control of a processor (e.g., processor (210)) or an RF transceiver (e.g., RF transceiver (220)). The delay circuit (540) may include a variable resistor circuit (541) and a variable capacitor circuit (542) for delaying the input control signal. The variable resistor circuit (541) may be arranged in series between the input and the output of the delay circuit (540), and the variable capacitor circuit (542) may be arranged in parallel to the output. The variable capacitor circuit (542) may be arranged between the node between the input and the output and ground.

[0067] In the RF switching circuit (270), the delay time and the waveform in the transient section (hereinafter, the transient waveform) can be adjusted. In order to check the input control signal, the delayed input control signal, and the gate voltage in the RF switching circuit (270), the waveforms at three points (e.g., the first point (581), the second point (582), the third point (583), and the fourth point (584)) can be checked. Hereinafter, FIG. 5b shows the waveform at each point according to the first input control signal having a high level, and FIG. 5c shows the waveform at each point according to the second input control signal having a low level.

[0068] Figures 5b and 5c show voltages at individual points in an RF switching circuit (e.g., RF switching circuit (270)).

[0069]

[0070] The first graph (591) represents the voltage of the first input control signal at the first point (581) of the RF switching circuit (270) of Fig. 5a. The horizontal axis of the first graph (591) represents time (unit: ns), and the vertical axis of the first graph (591) represents voltage (unit: V). The second graph (592) corresponds to the voltage at the second point (582) of the RF switching circuit (270) of Fig. 5a and represents the voltage of the first input control signal delayed by the delay circuit (540). The horizontal axis of the second graph (592) represents time (unit: ns), and the vertical axis of the second graph (592) represents voltage (unit: V). The third graph (593) corresponds to the voltage at the third point (583) of the RF switching circuit (270) of Fig. 5a and represents the gate voltage provided to the gate of each transistor of the series transistor circuit. The horizontal axis of the third graph (593) represents time (unit: ns), and the vertical axis of the third graph (593) represents voltage (unit: V). The fourth graph (594) corresponds to the voltage at the fourth point (584) of the RF switching circuit (270) of FIG. 5A and represents the gate voltage provided to the gate of each transistor of the shunt transistor circuit. The horizontal axis of the fourth graph (594) represents time (unit: ns), and the vertical axis of the fourth graph (594) represents voltage (unit: V). Comparing the first graph (591) and the second graph (592), it can be confirmed that the transient section is delayed by a certain amount of time by the delay circuit (540). Comparing the second graph (592) and the third graph (593), it can be confirmed that the waveform is modified in the transient section.

[0071]

[0072] The fifth graph (595) represents the voltage of the second input control signal at the first point (581) of the RF switching circuit (270) of Fig. 5a. The horizontal axis of the fifth graph (595) represents time (unit: ns), and the vertical axis of the fifth graph (595) represents voltage (unit: V). The sixth graph (596) corresponds to the voltage at the second point (582) of the RF switching circuit (270) of Fig. 5a and represents the voltage of the second input control signal delayed by the delay circuit (540). The horizontal axis of the sixth graph (596) represents time (unit: ns), and the vertical axis of the sixth graph (596) represents voltage (unit: V). The seventh graph (597) corresponds to the voltage at the third point (583) of the RF switching circuit (270) of Fig. 5a and represents the gate voltage provided to the gate of each transistor of the series transistor circuit. The horizontal axis of the seventh graph (597) represents time (unit: ns), and the vertical axis of the seventh graph (597) represents voltage (unit: V). The eighth graph (598) corresponds to the voltage at the fourth point (584) of the RF switching circuit (270) of FIG. 5A and represents the gate voltage provided to the gate of each transistor of the shunt transistor circuit. The horizontal axis of the eighth graph (598) represents time (unit: ns), and the vertical axis of the eighth graph (598) represents voltage (unit: V). Comparing the fifth graph (595) and the sixth graph (596), it can be confirmed that the transient section is delayed by a certain amount of time by the delay circuit (540). Comparing the sixth graph (596) and the seventh graph (597), it can be confirmed that the waveform is modified in the transient section.

[0073] An input control signal can be delayed through a delay circuit (540) including a variable resistor circuit (541) connected in series and a variable capacitor circuit (542) arranged in parallel. The graphs above describe examples in which a rising waveform (i.e., a first input control signal) and a falling waveform (i.e., a second input control signal) are provided. According to one embodiment, the delay circuit (540) may be configured to delay only the first input control signal. For example, at the second point (582), the first input control signal may increase in voltage in the range of about 840 ns to 920 ns, as in the second graph (592). On the other hand, at the second point (582), the second input control signal may increase in voltage in the range of about 760 ns to 840 ns, unlike the sixth graph (596). The delay time by the delay circuit (540) can be determined according to the resistance value of the variable resistor circuit (541) and the capacitance of the variable capacitor circuit (542). Hereinafter, examples of a delay circuit (540) including a variable resistor circuit (541) and a variable capacitor circuit (542) are described through FIGS. 6A to 6D.

[0074] FIGS. 6a, 6b, 6c, and 6d illustrate examples of a delay circuit (e.g., delay circuit (540)) including a variable resistor circuit and a variable capacitor circuit.

[0075] Referring to FIG. 6A, the delay circuit (540) may include a variable resistor circuit (541) and a variable capacitor circuit (542). The delay circuit (540) may include an input terminal (601) for receiving an input control signal and an output terminal (602) for outputting a delayed input control signal. The variable resistor circuit (541) may be arranged in series between the input terminal (601) and the output terminal (602). The variable resistor circuit (541) may include a plurality of resistors (e.g., a first resistor (611a), a second resistor (611b), a third resistor (611c), a fourth resistor (611d)) arranged in parallel and a plurality of switches (e.g., a first switch (621a), a second switch (621b), a third switch (621c), a fourth switch (621d)). The plurality of switches may be connected in series to the plurality of resistors, respectively. The above-described plurality of switches may include a switch for selectively connecting each resistor to an output terminal (602). A first resistor (611a) and a first switch (621a) may be disposed between an input terminal (601) and an output terminal (602). When the first switch (621a) is on, the first resistor (611a) may connect the input terminal (601) and the output terminal (602). A second resistor (611b) and a second switch (621b) may be disposed between the input terminal (601) and the output terminal (602). When the second switch (621b) is on, the second resistor (611b) may connect the input terminal (601) and the output terminal (602). A third resistor (611c) and a third switch (621c) may be disposed between the input terminal (601) and the output terminal (602). When the third switch (621c) is on, the third resistor (611c) can connect the input terminal (601) and the output terminal (602). The fourth resistor (611d) and the fourth switch (621d) can be placed between the input terminal (601) and the output terminal (602). When the fourth switch (621d) is on, the fourth resistor (611d) can connect the input terminal (601) and the output terminal (602).

[0076] A variable capacitor circuit (542) may be arranged in parallel at a node (603) between an input terminal (601) and an output terminal (602). The variable capacitor circuit (542) may include a plurality of capacitors arranged in parallel (e.g., a first capacitor (612a), a second capacitor (612b), a third capacitor (612c), and a fourth capacitor (612d)) and a plurality of switches (e.g., a first switch (622a), a second switch (622b), a third switch (622c), and a fourth switch (622d)). The plurality of switches may be connected in series to the plurality of capacitors, respectively. Each capacitor may be connected to ground. The plurality of switches may include a switch for selectively connecting each capacitor to the output terminal (602). The first capacitor (612a) and the first switch (622a) may be arranged between the ground and the node (603). When the first switch (622a) is on, the first capacitor (612a) can connect the node (603) to the ground. The second capacitor (612b) and the second switch (622b) can be disposed between the ground and the node (603). When the second switch (622b) is on, the second capacitor (612b) can connect the node (603) to the ground. The third capacitor (612c) and the third switch (622c) can be disposed between the ground and the node (603). When the third switch (622c) is on, the third capacitor (612c) can connect the node (603) to the ground. The fourth capacitor (612d) and the fourth switch (622d) can be disposed between the ground and the node (603). When the fourth switch (622d) is on, the fourth capacitor (612d) can connect the node (603) to the ground.

[0077] When using individual switches for each element, the resistance value of the variable resistor circuit (541) or the capacitance of the variable capacitor circuit (542) can be adaptively changed according to the control signal. In one embodiment, the electronic device (101) (e.g., RF transceiver (220)) can measure the intensity of noise from the feedback signal through a filter circuit (e.g., filter circuit (250), LPF). When the intensity of the noise is greater than a threshold value, the RF transceiver (220) can change the delay time by changing a setting value for the delay circuit (540). The setting value can be a resistance value and / or capacitance of the delay circuit (540). As the delay time of the waveform is changed, the delay time of the transistor operation (e.g., the operation of the transistor associated with a state change (which can be predefined) that causes a lot of noise) can be adjusted. For example, only a high-level signal (e.g., the first input control signal) may be delayed by a certain amount of time, and a low-level signal (e.g., the second input control signal) may not be delayed. As a result, the time it takes for the transistor of the series transistor circuit to turn on may become longer, and the time it takes for the transistor of the shunt transistor circuit to turn off may become longer. Due to this time delay, the transient time may be changed. As the transient time is set to be appropriate for the state of the circuit design of the RF switching circuit (270), noise may be reduced according to the change in the transient time. According to the repetitive switching in each path, a combination of resistance values ​​and capacitances for reducing noise may be identified. The RFFE module (230) may be controlled by the processor (210) or the RF transceiver (220) so that the variable resistance circuit (541) provides the resistance value. The RFFE module (230) can be controlled by the processor (210) or the RF transceiver (220) to provide the capacitance of the variable capacitor circuit (542).

[0078] Referring to Fig. 6b, the delay circuit (540) may include a variable resistor circuit (541) and a variable capacitor circuit (542). The delay circuit (540) may include an input terminal (601) for receiving an input control signal and an output terminal (602) for outputting a delayed input control signal. The variable resistor circuit (541) may be arranged in series between the input terminal (601) and the output terminal (602). A fuse may be used instead of a switch. Instead of adaptive switching through a control code, a fuse may be used. When the fuse burns, the corresponding path is electrically connected, but the resistance value or capacitance may be fixedly set due to the fuse. The circuit structure of Fig. 6b may be used to optimize circuit design in a manufacturing process.

[0079] A variable resistor circuit (541) may include a plurality of resistors (e.g., a first resistor (611a), a second resistor (611b), a third resistor (611c), and a fourth resistor (611d)) and a plurality of fuses (e.g., a first fuse (631a), a second fuse (631b), a third fuse (631c), and a fourth fuse (631d)). The plurality of fuses may be connected in series to the plurality of resistors, respectively. A variable capacitor circuit (542) may be arranged in parallel at a node (603) between an input terminal (601) and an output terminal (602). The plurality of fuses may include a fuse for selectively connecting each resistor to the output terminal (602). The variable capacitor circuit (542) may include a plurality of capacitors (e.g., a first capacitor (612a), a second capacitor (612b), a third capacitor (612c), and a fourth capacitor (612d)) and a plurality of fuses (e.g., a first fuse (632a), a second fuse (632b), a third fuse (632c), and a fourth fuse (632d)). The plurality of fuses may be connected in series to the plurality of capacitors, respectively. Each capacitor may be connected to ground. The plurality of fuses may include a fuse for selectively connecting each capacitor to an output terminal (602).

[0080] According to one embodiment, the electronic device (101) (e.g., RF transceiver (220)) can measure the intensity of noise from a feedback signal through a filter circuit (e.g., filter circuit (250), LPF). At this time, a test path between an input terminal (601) and an output terminal (602) and a test path between a node (603) and a ground can be used. In a state where the test paths are connected (the fuse is not in use), the electronic device (101) (e.g., RF transceiver (220)) can measure the intensity of noise from a feedback signal through a filter circuit (e.g., filter circuit (250), LPF). When the intensity of the noise is greater than a threshold value, the RF transceiver (220) can change the delay time by changing a setting value for the delay circuit (540). Once the fuse is blown, the circuit connection can be fixed. The RF transceiver (220) can generate a control signal so as to operate at a set value defined according to the measured noise intensity among the set values ​​of a predefined table. The set value may be a resistance value and / or capacitance of the delay circuit (540). The RF transceiver (220) can transmit the control signal to the RFFE module (230). The RFFE module (230) can operate each fuse in the RF switching circuit (270) according to the control signal.

[0081] Referring to FIG. 6C, the delay circuit (540) may include a variable resistor circuit (541) and a variable capacitor circuit (542). For the delay circuit (540) and individual switches, the descriptions of FIG. 6A may be referred to. The variable resistor circuit (541) may be arranged in series between the input terminal (601) and the output terminal (602). The variable resistor circuit (541) may include a plurality of resistors (e.g., a first resistor (641a), a second resistor (641b), a third resistor (641c), a fourth resistor (641d)) arranged in series and a plurality of switches (e.g., a first switch (651a), a second switch (651b), a third switch (651c), a fourth switch (651d)). The plurality of switches may be connected in parallel to the plurality of resistors, respectively. The plurality of switches may include a switch for selectively activating each resistor. A variable capacitor circuit (542) may be arranged in parallel at a node (603) between an input terminal (601) and an output terminal (602). The variable capacitor circuit (542) may include a plurality of capacitors arranged in series (e.g., a first capacitor (642a), a second capacitor (642b), a third capacitor (642c), and a fourth capacitor (642d)) and a plurality of switches (e.g., a first switch (652a), a second switch (652b), a third switch (652c), and a fourth switch (652d)). The plurality of switches may be connected in parallel to the plurality of capacitors, respectively. The first capacitor (642a) may be connected to the node (603). The fourth capacitor (642d) may be connected to ground. The plurality of switches may include a switch for selectively activating each capacitor.

[0082] Referring to FIG. 6d, the delay circuit (540) may include a variable resistor circuit (541) and a variable capacitor circuit (542). For the delay circuit (540) and individual fuses, the descriptions of FIG. 6a may be referred to. The variable resistor circuit (541) may be arranged in series between the input terminal (601) and the output terminal (602). The variable resistor circuit (541) may include a plurality of resistors (e.g., a first resistor (641a), a second resistor (641b), a third resistor (641c), and a fourth resistor (641d)) arranged in series and a plurality of fuses (e.g., a first fuse (661a), a second fuse (661b), a third fuse (661c), and a fourth fuse (661d)). The plurality of fuses may be connected in parallel to the plurality of resistors, respectively. The plurality of fuses may include a fuse for selectively activating each resistor. A variable capacitor circuit (542) may be arranged in parallel at a node (603) between an input terminal (601) and an output terminal (602). The variable capacitor circuit (542) may include a plurality of capacitors arranged in series (e.g., a first capacitor (642a), a second capacitor (642b), a third capacitor (642c), and a fourth capacitor (642d)) and a plurality of fuses (e.g., a first fuse (662a), a second fuse (662b), a third fuse (662c), and a fourth fuse (662d)). The plurality of fuses may be connected in parallel to the plurality of capacitors, respectively. The first capacitor (642a) may be connected to the node (603). The fourth capacitor (642d) may be connected to ground. The plurality of fuses may include a fuse for selectively activating each capacitor.

[0083] The circuit design for the variable resistance circuit (541) in FIGS. 6a, 6b, 6c, and 6d can be equally applied to the variable resistance circuits (e.g., the first variable resistance circuit (560a), the second variable resistance circuit (560b)) connected to the gates of each transistor of the RF switching circuit (270). According to one embodiment, the electronic device (101) (e.g., the RF transceiver (220)) can measure the intensity of noise from the feedback signal through a filter circuit (e.g., the filter circuit (250), LPF). When the intensity of the noise is greater than a threshold value, the RF transceiver (220) can change the voltage waveform in the transient section by changing the setting value for the delay circuit (540). The setting value can be the resistance value of the variable resistance circuit (e.g., the first variable resistance circuit (560a), the second variable resistance circuit (560b)). The RF transceiver (220) can generate a control signal for controlling the variable resistance circuit to provide the resistance value. The RF transceiver (220) can transmit the control signal to the RFFE module (230). The RFFE module (230) can operate each switch or fuse in the RF switching circuit (270) according to the control signal.

[0084] FIG. 7 illustrates an example of a radio frequency front end (RFFE) module (e.g., RFFE module (230)) including an antenna switching circuit.

[0085] Referring to FIG. 7, the electronic device (101) may include a processor (210), an RF transceiver (220), an RFFE module (230), a filter circuit (250), a first switching circuit (281a), a second switching circuit (281b), and / or an antenna (290). For each component, the descriptions of FIG. 2 may be referred to.

[0086] The RFFE module (230) may include components of a first RF path. For example, the RFFE module (230) may include a first PA (711) for transmission, a first LNA (712) for reception, a first switch (715), and a first filter (717). The RFFE module (230) may include components of a second RF path. For example, the RFFE module (230) may include a second PA (721) for transmission, a second LNA (722), a second switch (725), and a second filter (727). The RFFE module (230) may include components of a third RF path. For example, the RFFE module (230) may include a third PA (731) for transmission, a third LNA (732), a third switch (735), and a third filter (737). In addition, the RFFE module (230) may include a controller (237) for controlling components within the RFFE module (230). For the controller (237), the descriptions of FIG. 2 may be referred to.

[0087] The RFFE module (230) may include an antenna switching circuit (770) for connecting one of the RF paths to one of the antennas. The antenna switching circuit (770) may be referred to as an antenna switching module (ASM) to transmit signals of multiple RF bands through a limited number of antennas. For example, the electronic device (101) may selectively electrically connect one of the filters of multiple RF bands to an antenna through the antenna switching circuit (770). As an example, the antenna switching circuit (770) may selectively connect one of the first filter (717), the second filter (727), and the third filter (737) to the antenna (290). One of the filter (717), the second filter (727), and the third filter (737) may be connected to the antenna (290) via the antenna switching circuit (770) and the coupler (280). The antenna switching circuit (770) may correspond to an nPmT switch. The antenna switching circuit (770) may have n poles and m throws. n may be an integer greater than or equal to 1. m may be an integer greater than or equal to 1. One pole and one throw may be understood as one unit switching circuit. For example, one pole and one throw in the antenna switching circuit (770) may be referred to as the RF switching circuit (270) described through FIGS. 2 to 6D.

[0088] FIG. 8a, FIG. 8b, FIG. 8c, FIG. 8d, and FIG. 8e are drawings for explaining noise introduced into a receiving path due to switching in an antenna switching circuit (e.g., antenna switching circuit (770)).

[0089] Referring to FIG. 8A, an RFFE circuit (e.g., an RFFE module (230)) of an electronic device (101) may include an antenna switching circuit (770). The antenna switching circuit (770) may be connected to five paths and two antennas. The five paths may include a first RF path (811), a second RF path (812), a third RF path (813), a fourth RF path (814), and a fifth RF path (815). The first RF path (811) may include a first switching circuit (821). The first switching circuit (821) may include a series switching circuit (821a) and a shunt switching circuit (821b). The second RF path (812) may include a transmit filter (822). The third RF path (813) may include a receive filter (823). The fourth RF path (814) may include a duplexer (824). The transmit path (814a) of the fourth RF path (814) and the receive path (814b) of the fourth RF path (814) may be connected to the duplexer (824). The fifth RF path (815) may include a duplexer (825). The transmit path (815a) of the fifth RF path (815) and the receive path (815b) of the fifth RF path (815) may be connected to the duplexer (825). The two antennas may include a first antenna (891) and a second antenna (892).

[0090] The first RF path (811) may be connected to the first antenna (891), the second antenna (892), or neither antenna via switches within the antenna switching circuit (770). The switches may include a first series switching circuit (831a), a second series switching circuit (831b), and a shunt switching circuit (831c). Each of the first series switching circuit (831a), the second series switching circuit (831b), and the shunt switching circuit (831c) may include a plurality of transistors. For the first series switching circuit (831a) and the second series switching circuit (831b), reference may be made to the description of the series transistor circuit (510). For the shunt switching circuit (831c), reference may be made to the description of the shunt transistor circuit (520). When the first RF path (811) is connected to the first antenna (891) (e.g., the series switching circuit (821a) is on, the shunt switching circuit (821b) is off), the first series switching circuit (831a) may be on and the second series switching circuit (831b) and the shunt switching circuit (831c) may be off. When the first RF path (811) is connected to the second antenna (892), the second series switching circuit (831b) may be on and the first series switching circuit (831a) and the shunt switching circuit (831c) may be off. When the first RF path (811) is not connected to any antenna, the shunt switching circuit (831c) may be on and the first series switching circuit (831a) and the second series switching circuit (831b) may be off.

[0091] The second RF path (812) may be connected to the first antenna (891), the second antenna (892), or neither antenna via switches within the antenna switching circuit (770). The switches may include a first series switching circuit (832a), a second series switching circuit (832b), and a shunt switching circuit (832c). Each of the first series switching circuit (832a), the second series switching circuit (832b), and the shunt switching circuit (832c) may include a plurality of transistors. For the first series switching circuit (832a) and the second series switching circuit (832b), reference may be made to the description of the series transistor circuit (510). For the shunt switching circuit (832c), reference may be made to the description of the shunt transistor circuit (520). When the second RF path (812) is connected to the first antenna (891), the first series switch (832a) may be in an on state and the second series switch (832b) and the shunt switch (832c) may be in an off state. When the second RF path (812) is connected to the second antenna (892), the second series switch (832b) may be in an on state and the first series switch (832a) and the shunt switch (832c) may be in an off state. When the second RF path (812) is not connected to any antenna, the shunt switch (832c) may be in an on state and the first series switch (832a) and the second series switch (832b) may be in an off state.

[0092] The third RF path (813) may be connected to the first antenna (891), the second antenna (892), or neither antenna via switches within the antenna switching circuit (770). The switches may include a first series switching circuit (833a), a second series switching circuit (833b), and a shunt switching circuit (833c). Each of the first series switching circuit (833a), the second series switching circuit (833b), and the shunt switching circuit (833c) may include a plurality of transistors. For the first series switching circuit (833a) and the second series switching circuit (833b), reference may be made to the description of the series transistor circuit (510). For the shunt switching circuit (833c), reference may be made to the description of the shunt transistor circuit (520). When the third RF path (813) is connected to the first antenna (891), the first series switch (833a) may be in an on state and the second series switch (833b) and the shunt switch (833c) may be in an off state. When the third RF path (813) is connected to the second antenna (892), the second series switch (833b) may be in an on state and the first series switch (833a) and the shunt switch (833c) may be in an off state. When the third RF path (813) is not connected to any antenna, the shunt switch (833c) may be in an on state and the first series switch (833a) and the second series switch (833b) may be in an off state.

[0093] The fourth RF path (814) may be connected to the first antenna (891), the second antenna (892), or neither antenna via switches within the antenna switching circuit (770). The switches may include a first series switching circuit (834a), a second series switching circuit (834b), and a shunt switching circuit (834c). Each of the first series switching circuit (834a), the second series switching circuit (834b), and the shunt switching circuit (834c) may include a plurality of transistors. For the first series switching circuit (834a) and the second series switching circuit (834b), reference may be made to the description of the series transistor circuit (510). For the shunt switching circuit (834c), reference may be made to the description of the shunt transistor circuit (520). When the fourth RF path (814) is connected to the first antenna (891), the first series switch (834a) may be in an on state and the second series switch (834b) and the shunt switch (834c) may be in an off state. When the fourth RF path (814) is connected to the second antenna (892), the second series switch (834b) may be in an on state and the first series switch (834a) and the shunt switch (834c) may be in an off state. When the fourth RF path (814) is not connected to any antenna, the shunt switch (834c) may be in an on state and the first series switch (834a) and the second series switch (834b) may be in an off state.

[0094] The fifth RF path (815) may be connected to the first antenna (891), the second antenna (892), or neither antenna via switches within the antenna switching circuit (770). The switches may include a first series switching circuit (835a), a second series switching circuit (835b), and a shunt switching circuit (835c). Each of the first series switching circuit (835a), the second series switching circuit (835b), and the shunt switching circuit (835c) may include a plurality of transistors. For the first series switching circuit (835a) and the second series switching circuit (835b), reference may be made to the description of the series transistor circuit (510). For the shunt switching circuit (835c), reference may be made to the description of the shunt transistor circuit (520). When the fifth RF path (815) is connected to the first antenna (891), the first series switch (835a) may be in an on state and the second series switch (835b) and the shunt switch (835c) may be in an off state. When the fifth RF path (815) is connected to the second antenna (892), the second series switch (835b) may be in an on state and the first series switch (835a) and the shunt switch (835c) may be in an off state. When the fifth RF path (815) is not connected to any antenna, the shunt switch (835c) may be in an on state and the first series switch (835a) and the second series switch (835b) may be in an off state.

[0095] Referring to FIG. 8B, a fourth RF path (814) may be connected to a first antenna (891). The first series switch (834a) may be in an on state, and the second series switch (834b) and the shunt switch (834c) may be in an off state. While the fourth RF path (814) is connected to the first antenna (891), other RF paths may not be connected to the antenna. In other RF paths, the shunt switch may be closed for switch isolation. For example, for the first RF path (811), the shunt switching circuit (831c) may be in an on state, and the first series switching circuit (831a) and the second series switching circuit (831b) may be in an off state. For example, for the second RF path (812), the shunt switch (832c) may be on and the first series switch (832a) and the second series switch (832b) may be off. For example, for the third RF path (813), the shunt switch (833c) may be on and the first series switch (833a) and the second series switch (833b) may be off. For example, for the fifth RF path (815), the shunt switch (835c) may be on and the first series switch (835a) and the second series switch (835b) may be off.

[0096] The fourth RF path (814) may be used to transmit or receive a signal in an FDD frequency band. For example, the RFFE module (230) may support EN-DC (EUTRAN (evolved UMTS terrestrial radio access network) NR (new radio) DC (dual connectivity)). The FDD frequency band may be an anchor band of the EN-DC. A transmission signal (861) in the FDD frequency band may be transmitted to the first antenna (891) through the fourth RF path (814). The transmission signal (861) may be provided to the first antenna (891) along a flow (863) via the first series switch (834a). A reception signal (862) in the FDD frequency band may be received from the first antenna (891) through the fourth RF path (814).

[0097] Referring to FIG. 8c, the first RF path (811) may be connected to the second antenna (892). The second series switching circuit (831b) may be in an on state, and the first series switch (831a) and the shunt switch (831c) may be in an off state. While the first RF path (811) is connected to the second antenna (892) and the fourth RF path (814) is connected to the first antenna (891), the other RF paths may not be connected to the antennas. In the other RF paths, the shunt switch may be closed for switch isolation. For example, for the second RF path (812), the shunt switch (832c) may be in an on state, and the first series switch (832a) and the second series switch (832b) may be in an off state. For example, for the third RF path (813), the shunt switch (833c) may be on and the first series switch (833a) and the second series switch (833b) may be off. For example, for the fifth RF path (815), the shunt switch (835c) may be on and the first series switch (835a) and the second series switch (835b) may be off. The first RF path (811) may be used to transmit or receive a signal in a TDD frequency band. For example, the TDD frequency band may be an NR frequency band of the EN-DC. As an example, an SRS signal may be transmitted through the second antenna (892) via the first RF path (811). A transmission signal (877) in the TDD frequency band may be transmitted to the second antenna (892). The transmission signal (877) can be provided to the second antenna (892) via the second series switch (831b).

[0098] In a TDD frequency band, the downlink and uplink periods are temporally distinct. For example, the electronic device (101) may transmit a signal in the uplink period and then receive or wait for a signal in the downlink period. After the uplink period has elapsed, the electronic device (101) may control the antenna switching circuit (770) to disconnect the path used to transmit the uplink signal. In addition, for example, when transmitting multiple SRSs for SRS antenna switching, the electronic device (101) may transmit the SRS through the second antenna (892) and then disconnect the path connected to the second antenna (892) in order to transmit the SRS through another antenna. The electronic device (101) may control the antenna switching circuit (770) to disconnect the used path. Such switching may cause a switching delay, as described in FIGS. 3A and 3B .

[0099] Referring to FIG. 8d, the connection between the first RF path (811) and the second antenna (892) may be disconnected. The series switching circuit (821a) may be turned off. The shunt switching circuit (821b) may be turned off. The second series switching circuit (831b) in the antenna switching circuit (770) may be turned off. The shunt series switching circuit (831c) in the antenna switching circuit (770) may be turned off. This state may be referred to as an open-dwell (e.g., the second state (362) in FIG. 3b). Due to the state change of the switching circuit, noise may be generated. For example, a noise signal (888) may be generated. The noise signal (888) may be introduced into the path connected to the first antenna (891). The noise signal (888) may pass through the first series switching circuit (834a) and be introduced into the duplexer (824). The noise signal (888) can be introduced into the transmit path (814a) or the receive path (814b).

[0100] Referring to FIG. 8e, after the connection between the first RF path (811) and the second antenna (892) is disconnected, the shunt switching circuit (821b) may be turned on. In the antenna switching circuit (770), the shunt series switching circuit (831c) may be turned on. This state may be referred to as a shunt-dwell (e.g., the third state (362) of FIG. 3b). The switching circuit connecting the first RF path (811) and the second antenna (892) operates in the third state (363) via the second state (362) of FIG. 3b. Due to the state change of the switching circuit, noise may be generated. The noise generated in the second state (362) may be introduced into the receiving path (814b).

[0101] The electronic device (101) according to embodiments of the present disclosure can reduce the influence of the above-described noise by controlling the setting values ​​of the parameters of the switching circuit (e.g., the second series switching circuit (831b), the shunt switching circuit (831c)) for connection between the first RF path (811) and the second antenna (892) in the antenna switching circuit (770). According to one embodiment, the electronic device (101) can control the resistance value of the variable resistor connected to the gate of each transistor of the switching circuit (e.g., the second series switching circuit (831b), the shunt switching circuit (831c)) between the first RF path (811) and the second antenna (892). For example, the electronic device (101) can control a switch or a fuse in the variable resistor through a control signal provided to the RFFE module (230). As the resistance value in the variable resistor changes, the transient waveform can change smoothly. Due to the smooth transient waveform, the intensity of the introduced noise may be reduced. According to one embodiment, the electronic device (101) may control a delay time (e.g., a time constant) in a delay circuit of a level shifter that supplies voltage to the gate of each transistor of a switching circuit (e.g., a second series switching circuit (831b), a shunt switching circuit (831c)) between the first RF path (811) and the second antenna (892). For example, the delay circuit may include an RC circuit. Through a control signal provided to the RFFE module (230), the electronic device (101) may set the resistance value of a variable resistor circuit (e.g., a variable resistor circuit (541)) and the capacitance of a variable capacitor circuit (e.g., a variable capacitor circuit (542)) in the RC circuit. According to the control signal, a switch may be operated or a fuse may be activated so that an intended resistance value and capacitance are provided. As the delay time varies, a sufficient transient time may be secured. As the transient time increases, the intensity of noise introduced into the receiving path may decrease.

[0102] Fig. 9 shows the operation flow of an electronic device (e.g., electronic device (101)) for controlling low-frequency noise.

[0103] Referring to FIG. 9, in operation (901), an electronic device (101) (e.g., a processor (210), an RF transceiver (220)) can measure noise in a low frequency band. The electronic device (101) can obtain a noise signal from a feedback signal from a coupler (e.g., a coupler (280)) through a filter circuit (e.g., a filter circuit (250)) configured to pass only frequencies below a specified frequency (e.g., about 100 MHz). The electronic device (101) can determine the intensity of the noise signal.

[0104] In operation (903), the electronic device (101) (e.g., processor (210), RF transceiver (220)) can determine whether the noise intensity is greater than or equal to a threshold value. Since noise in the RF switching circuit (270) degrades communication performance, it is necessary to reduce the noise. If the noise intensity is greater than or equal to the threshold value, the electronic device (101) can perform operation (1005). If the noise intensity is less than the threshold value, the electronic device (101) can terminate the procedure for controlling the noise.

[0105] In operation (905), the electronic device (101) (e.g., processor (210), RF transceiver (220)) may set a value of a variable element for determining a delay time of a delay circuit (e.g., delay circuit (540)) of an RF switching circuit (e.g., RF switching circuit (270)). The delay circuit (540) may be configured to delay an input control signal applied to the RF switching circuit (270). For example, the delay circuit (540) may be configured to delay an input control signal of a rising pattern (e.g., a first input control signal) and pass an input control signal of a falling pattern (e.g., a second input control signal) as is. As another example, the delay circuit (540) may be configured to delay an input control signal of a falling pattern (e.g., a second input control signal) and pass an input control signal of a rising pattern (e.g., a first input control signal) as is. The delay circuit (540) may be an RC circuit having a resistance value (R) and a capacitance (C). The delay circuit (540) may include a variable resistor circuit (e.g., a variable resistor circuit (541)) and a variable capacitor circuit (542). According to one embodiment, a delay time (e.g., a time constant) of the delay circuit (540) may be determined through the resistance value of the variable resistor circuit (541) and the capacitance of the variable capacitor circuit (542). The electronic device (101) may determine the delay time to reduce the noise. The electronic device (101) may set the value (e.g., a resistance value, a capacitance) of a variable element providing the delay time to the RFFE module (230). For example, the electronic device (101) (e.g., an RF transceiver (220)) may transmit a control signal to the RFFE module (230) to set the value of the variable element.

[0106] In operation (907), the electronic device (101) (e.g., processor (210), RF transceiver (220)) may set the resistance value of a variable resistance circuit (e.g., first variable resistance circuit (560a), second variable resistance circuit (560b)) connected to the gate of the transistor. The resistance value connected to the gate of the transistor may affect the waveform in the transient section when the state of the transistor changes. The more rapidly the voltage of the waveform changes within a limited time, the greater the influence of noise may be. In order to reduce the influence of noise, the electronic device (101) may set the degradation value. Meanwhile, since there is an upper limit of the switching time according to the communication standard, the resistance value may be set to smooth the waveform within the upper limit. The electronic device (101) may set the RFFE module (230) to provide the resistance value. For example, an electronic device (101) (e.g., an RF transceiver (220)) can transmit a control signal to an RFFE module (230) to set a resistance value of a variable resistance circuit (e.g., a first variable resistance circuit (560a), a second variable resistance circuit (560b)).

[0107] In RF switching circuits, low-frequency noise may be generated as transistors are repeatedly turned on and off. For example, in miniaturized RFFE modules, the noise may occur frequently due to insufficient electrical / physical separation between the multiple built-in switches. Generally, in order to eliminate the low-frequency noise, it is inevitable to redesign the RFFE module. The electronic device (101) according to embodiments of the present disclosure can measure low-frequency noise in a specific process or in real time. When the intensity of the low-frequency noise is higher than a threshold, it is possible to monitor whether the intensity of the low-frequency noise is lower than the threshold within the timing specification by changing the transient waveform and the delay time in the delay circuit. Since the parameters for the transient waveform (e.g., the resistance value connected to the gate) and the delay time in the delay circuit (e.g., the resistance value and capacitance of the RC circuit) are set in the RF switching circuit according to the noise condition, the noise performance of the RF system can be improved. Rather than relying on fixed circuit design in electronic devices, parameter values ​​are set within the RF switching circuit based on the intensity of the noise being measured, allowing for optimized noise settings for each device.

[0108] The effects that can be obtained from the present disclosure are not limited to the effects mentioned above, and other effects that are not mentioned can be clearly understood by a person having ordinary skill in the art to which the present disclosure belongs from the description below.

[0109]

[0110] The electronic device (101) can transmit or receive a signal in an operating frequency band. The operating frequency band may correspond to one of frequency bands of about 600 MHz or more. Meanwhile, the noise measured in the present disclosure is a low-frequency signal corresponding to a frequency of less than about 100 MHz, which is noise within an RFFE circuit (e.g., RFFE module (230)). Therefore, when the cutoff frequency of a filter circuit (e.g., filter circuit (250), LPF) connected to a coupler (e.g., coupler (280)) and an RF transceiver (e.g., RF transceiver (220)) within the electronic device (101) is around about 100 MHz, the implementation of the present disclosure can be confirmed. In addition, since the LPF operates only to measure noise, the implementation of the present disclosure can be confirmed based on whether a switching circuit (e.g., first switching circuit (281a) and second switching circuit (281b)) connected to the LPF is turned on or off. In addition, since the values ​​of parameters within the RFFE circuit are changed based on noise having an intensity greater than a threshold value, the implementation of the present disclosure can be confirmed based on a control signal (e.g., MIPI) signal transmitted to the RFFE circuit after the LPF operation. It can be confirmed that a transient waveform or a delay time is changed according to the control signal, or it can be confirmed that a resistance value of a variable resistor circuit or a capacitor of a variable capacitor circuit is changed through the control signal.

[0111] In embodiments of the present disclosure, an electronic device (101) is provided. The electronic device (101) may include a processor (210) including a processing circuit; an RF (radio frequency) transceiver (220); an RF switching circuit (270) and a radio frequency front end (RFFE) circuit including a coupler; an antenna connected to the coupler; and a filter circuit (250) configured to pass a signal having a frequency lower than a designated frequency among RF signals from the coupler to the RF transceiver (220). The RF switching circuit (270) may include a series transistor circuit (510) for connecting an input terminal and an output terminal; a shunt transistor circuit (520) for connecting a node between the input terminal and the output terminal and a ground; a first variable resistor circuit (560a) for each transistor of the series transistor circuit (510), and a second variable resistor circuit (560b) for each transistor of the shunt transistor circuit (520). The RF switching circuit (270) may be controlled to set the first resistance value of the first variable resistance circuit (560a) and the second resistance value of the second variable resistance circuit (560b) in response to the intensity of the signal having an intensity greater than a threshold value, under the control of the processor (210) or the RF transceiver (220).

[0112] For example, the RF switching circuit (270) may include a delay circuit for delaying an input control signal; and a control circuit (530) for providing a first voltage to the gate of each transistor of the series transistor circuit (510) through the first variable resistor circuit (560a) and providing a second voltage to the gate of each transistor of the shunt transistor circuit (520) through the second variable resistor circuit (560b) according to the delayed input control signal. The RF switching circuit (270) may be controlled to set a delay time of the input control signal according to the control of the processor (210) or the RF transceiver (220) in response to a signal having an intensity greater than or equal to the threshold value.

[0113] For example, the delay circuit may be configured to provide a delayed control signal to the control circuit (530) according to the delay time in response to the input control signal. The delay circuit may include a variable resistor circuit and a variable capacitor circuit. The resistance value of the variable resistor circuit and the capacitance of the variable capacitor circuit may be used to determine the delay time.

[0114] For example, the variable resistance circuit may include a plurality of resistors and a switch for selectively connecting each of the plurality of resistors to the control circuit (530).

[0115] For example, the variable resistance circuit may include a plurality of resistors and a fuse for selectively connecting each of the plurality of resistors to the control circuit (530).

[0116] For example, the delay circuit may include a first node for receiving the input control signal and a second node for outputting the delayed input control signal. The variable resistor circuit may be arranged between the first node and the second node, and the variable capacitor circuit may be arranged between the second node and ground.

[0117] For example, the RF switching circuit (270) may include an antenna switching circuit for connecting an RF path within the RFFE circuit to one of the plurality of antennas. One of the poles of the antenna switching circuit may correspond to the input terminal. One of the throws of the antenna switching circuit may correspond to the output terminal.

[0118] For example, the input terminal of the RF switching circuit (270) may be connected to a switching circuit for a time division duplex (TDD) frequency band. The output terminal of the RF switching circuit (270) may be connected to the antenna used for antenna switching for SRS (sounding reference signal) transmission.

[0119] For example, another pole among the poles of the antenna switching circuit may be connected to a duplexer for an FDD (frequency division duplex) frequency band. Another throw among the throws of the antenna switching circuit may be connected to a second antenna different from the antenna. The FDD frequency band and the TDD frequency band may be used for EN-DC (EUTRAN (evolved UMTS terrestrial radio access network) NR (new radio) DC (dual connectivity)).

[0120] For example, the electronic device (101) may include a first switching circuit (281a) configured to selectively connect the coupler to one of the filter circuit (250) or the feedback line; and a second switching circuit (281b) configured to selectively connect the RF transceiver (220) to one of the filter circuit (250) or the feedback line.

[0121] For example, when a feedback signal having an intensity lower than the threshold value is detected through the filter circuit (250) after the first resistance value of the first variable resistance circuit (560a) and the second resistance value of the second variable resistance circuit (560b) are set, the RF transceiver (220) can control the first switching circuit (281a) to connect the coupler and the feedback line, and control the second switching circuit (281b) to connect the RF transceiver (220) and the feedback line.

[0122] For example, the RF transceiver (220) may control the first switching circuit (281a) to connect the coupler and the filter circuit (250) when a feedback signal having an intensity greater than the threshold value is detected through the filter circuit (250) after the first resistance value of the first variable resistance circuit (560a) and the second resistance value of the second variable resistance circuit (560b) are set, and may control the second switching circuit (281b) to connect the RF transceiver (220) and the filter circuit (250).

[0123] For example, the RF transceiver (220) may be configured to generate a control signal in response to the signal having an intensity greater than or equal to the threshold value, and transmit the control signal to the RFFE circuit via a mobile industry processor interface (MIPI) interface. The RFFE circuit may be configured to control the first variable resistor circuit (560a) to provide the first resistance value and to control the second variable resistor circuit (560b) to provide the second resistance value in response to the control signal from the RF transceiver (220).

[0124] For example, the first variable resistance circuit (560a) may include a plurality of resistors and a switch for connecting each of the plurality of resistors to a gate of a corresponding transistor. The second variable resistance circuit (560b) may include a plurality of resistors and a switch for connecting each of the plurality of resistors to a gate of a corresponding transistor.

[0125] For example, the above-mentioned frequency may correspond to 100 MHz (megahertz). The filter circuit (250) may include a low pass filter (LPF).

[0126] In embodiments of the present disclosure, an electronic device (101) is provided. The electronic device (101) may include a processor (210) including a processing circuit; an RF (radio frequency) transceiver (220); an RF switching circuit (270) and a radio frequency front end (RFFE) circuit including a coupler; an antenna connected to the coupler; and a filter circuit (250) configured to pass a signal having a frequency lower than a designated frequency among RF signals from the coupler to the RF transceiver (220). The RF switching circuit (270) may include a series transistor circuit (510) for connecting an input terminal and an output terminal; a shunt transistor circuit (520) for connecting a node between the input terminal and the output terminal and a ground; a delay circuit for delaying an input control signal; And, according to the delayed input control signal, the shunt transistor circuit (520) may include a control circuit (530) for providing a first voltage to the gate of each transistor and providing a second voltage to the gate of each transistor of the shunt transistor circuit (520). The RF switching circuit (270) may be controlled to set a delay time of the input control signal according to the control of the processor (210) or the RF transceiver (220) in response to the intensity of the signal having an intensity greater than or equal to a threshold value.

[0127] For example, the delay circuit may be configured to provide a delayed control signal to the control circuit (530) according to the delay time in response to the input control signal. The delay circuit may include a variable resistor circuit and a variable capacitor circuit. The resistance value of the variable resistor circuit and the capacitance of the variable capacitor circuit may be used to determine the delay time.

[0128] For example, the variable resistance circuit may include a plurality of resistors; and a switch or fuse for selectively connecting each of the plurality of resistors to the control circuit (530).

[0129] For example, the RF switching circuit (270) may include an antenna switching circuit for connecting an RF path within the RFFE circuit to one of the plurality of antennas. A first pole corresponding to the input terminal among the poles of the antenna switching circuit may be connected to a switching circuit for a time division duplex (TDD) frequency band. A first throw corresponding to the output terminal among the throws of the antenna switching circuit may be connected to the antenna used for antenna switching for sounding reference signal (SRS) transmission. A second pole among the poles of the antenna switching circuit may be connected to a duplexer for a frequency division duplex (FDD) frequency band. A second throw among the throws of the antenna switching circuit may be connected to a second antenna different from the antenna. The FDD frequency band and the TDD frequency band may be used for EN-DC (EUTRAN (evolved UMTS terrestrial radio access network) NR (new radio) DC (dual connectivity)).

[0130] For example, the electronic device may include a first switching circuit (281a) configured to selectively connect the coupler with one of the filter circuit (250) or the feedback line; and a second switching circuit (281b) configured to selectively connect the RF transceiver (220) with one of the filter circuit (250) or the feedback line. When a feedback signal having an intensity less than the threshold value is detected through the filter circuit (250) after the first resistance value of the first variable resistor circuit (560a) and the second resistance value of the second variable resistor circuit (560b) are set, the RF transceiver (220) may control the first switching circuit (281a) to connect the coupler with the feedback line, and control the second switching circuit (281b) to connect the RF transceiver (220) with the feedback line.

[0131] For one or more embodiments, at least one of the components described in one or more of the preceding drawings may be configured to perform one or more operations, techniques, processes, and / or methods as described herein. For example, a processor (e.g., a baseband processor) described herein with respect to one or more of the preceding drawings may be configured to operate according to one or more examples described herein. For another example, circuitry associated with a user equipment (UE), a base station, a network element, and the like, as described above with respect to one or more of the preceding drawings, may be configured to operate according to one or more examples described herein.

[0132] Any of the embodiments described above may be combined with any other embodiment (or combination of embodiments) unless explicitly stated otherwise. The foregoing description of one or more implementations provides examples and descriptions, but is not intended to be exhaustive or limit the scope of the embodiments to the precise forms disclosed. Modifications and variations are possible in light of the above teachings or may be learned from practicing various embodiments.

[0133] Electronic devices according to the various embodiments disclosed in this document may take various forms. Electronic devices may include, for example, portable communication devices (e.g., smartphones), computer devices, portable multimedia devices, portable medical devices, cameras, electronic devices, or home appliances. Electronic devices according to the embodiments of this document are not limited to the aforementioned devices.

[0134] The various embodiments of this document and the terminology used therein are not intended to limit the technical features described in this document to specific embodiments, but should be understood to include various modifications, equivalents, or substitutes of the embodiments. In connection with the description of the drawings, similar reference numerals may be used for similar or related components. The singular form of a noun corresponding to an item may include one or more of the items, unless the context clearly indicates otherwise. In this document, each of the phrases "A or B", "at least one of A and B", "at least one of A or B", "A, B, or C", "at least one of A, B, and C", and "at least one of A, B, or C" can include any one of the items listed together in the corresponding phrase among those phrases, or all possible combinations thereof. Terms such as "first," "second," or "first" or "second" may be used merely to distinguish one component from another, and do not limit the components in any other respect (e.g., importance or order). When a component (e.g., a first component) is referred to as "coupled" or "connected" to another component (e.g., a second component), with or without the terms "functionally" or "communicatively," it means that the component can be connected to the other component directly (e.g., wired), wirelessly, or through a third component.

[0135] The term "module" used in various embodiments of this document may include a unit implemented in hardware, software, or firmware, and may be used interchangeably with terms such as logic, logic block, component, or circuit. A module may be an integral component, or a minimum unit or part of such a component that performs one or more functions. For example, according to one embodiment, a module may be implemented in the form of an application-specific integrated circuit (ASIC).

[0136] Various embodiments of the present document may be implemented as software (e.g., a program (140)) including one or more instructions stored in a storage medium (e.g., an internal memory (136) or an external memory (138)) readable by a machine (e.g., an electronic device (101)). For example, a processor (e.g., a processor (120)) of the machine (e.g., an electronic device (101)) may call at least one instruction among the one or more instructions stored from the storage medium and execute it. This enables the machine to operate to perform at least one function according to the at least one called instruction. The one or more instructions may include code generated by a compiler or code executable by an interpreter. The machine-readable storage medium may be provided in the form of a non-transitory storage medium. Here, 'non-transitory' simply means that the storage medium is a tangible device and does not contain signals (e.g., electromagnetic waves), and the term does not distinguish between cases where data is stored semi-permanently or temporarily on the storage medium.

[0137] According to one embodiment, the method according to various embodiments disclosed in the present document may be provided as a computer program product. The computer program product may be traded as a product between a seller and a buyer. The computer program product may be distributed in the form of a machine-readable storage medium (e.g., compact disc read-only memory (CD-ROM)), or may be distributed online (e.g., downloaded or uploaded) via an application store (e.g., Play Store™) or directly between two user devices (e.g., smart phones). In the case of online distribution, at least a portion of the computer program product may be temporarily stored or temporarily generated in a machine-readable storage medium, such as the memory of a manufacturer's server, an application store's server, or an intermediary server.

[0138] According to various embodiments, each component (e.g., a module or a program) of the above-described components may include one or more entities, and some of the entities may be separated and placed in other components. According to various embodiments, one or more components or operations of the aforementioned components may be omitted, or one or more other components or operations may be added. Alternatively or additionally, a plurality of components (e.g., a module or a program) may be integrated into a single component. In such a case, the integrated component may perform one or more functions of each of the plurality of components identically or similarly to those performed by the corresponding component among the plurality of components prior to the integration. According to various embodiments, the operations performed by a module, program, or other component may be executed sequentially, in parallel, iteratively, or heuristically, or one or more of the operations may be executed in a different order, omitted, or one or more other operations may be added.

Claims

1. In electronic devices, A processor comprising a processing circuit; RF(radio frequency) transmitter and receiver; Radio frequency front end (RFFE) circuit including RF switching circuit and coupler; an antenna connected to the above coupler; and A filter circuit configured to pass a signal having a frequency lower than a specified frequency among RF signals from the coupler to the RF transceiver, The above RF switching circuit, A series transistor circuit for connecting input and output terminals; A shunt transistor circuit for connecting a node between the input terminal and the output terminal and ground; A first variable resistor circuit for each transistor of the above series transistor circuit and a second variable resistor circuit for each transistor of the above shunt transistor circuit are included, The RF switching circuit is controlled to set a first resistance value of the first variable resistor circuit and a second resistance value of the second variable resistor circuit in response to the intensity of the signal having an intensity greater than a threshold value, according to the control of the processor or the RF transceiver. Electronic devices.

2. In claim 1, The above RF switching circuit, a delay circuit for delaying an input control signal; and In accordance with the delayed input control signal, a control circuit is included for providing a first voltage to the gate of each transistor of the series transistor circuit through the first variable resistor circuit and providing a second voltage to the gate of each transistor of the shunt transistor circuit through the second variable resistor circuit. The RF switching circuit is controlled to set a delay time of the input control signal according to the control of the processor or the RF transceiver in response to a signal having an intensity greater than the threshold value. Electronic devices.

3. In claim 2, The delay circuit is configured to provide a delayed control signal to the control circuit according to the delay time in response to the input control signal, The above delay circuit includes a variable resistor circuit and a variable capacitor circuit, The resistance value of the variable resistor circuit and the capacitance of the variable capacitor circuit are used to determine the delay time. Electronic devices.

4. In claim 3, The variable resistance circuit includes a plurality of resistors and a switch for selectively connecting each of the plurality of resistors to the control circuit. Electronic devices.

5. In claim 3, The variable resistance circuit includes a plurality of resistors and a fuse for selectively connecting each of the plurality of resistors to the control circuit. Electronic devices.

6. In claim 3, The delay circuit includes a first node for receiving the input control signal and a second node for outputting the delayed input control signal, The variable resistor circuit is disposed between the first node and the second node, and the variable capacitor circuit is disposed between the second node and ground. Electronic devices.

7. In claim 1, The RF switching circuit includes an antenna switching circuit for connecting an RF path within the RFFE circuit to one of the plurality of antennas, One of the poles of the above antenna switching circuit corresponds to the above input terminal, One of the throws of the above antenna switching circuit corresponds to the above output terminal, Electronic devices.

8. In claim 7, The input terminal of the above RF switching circuit is connected to a switching circuit for a TDD (time division duplex) frequency band, The output terminal of the above RF switching circuit is connected to the antenna used for antenna switching for SRS (sounding reference signal) transmission. Electronic devices.

9. In claim 8, Another pole of the above antenna switching circuit is connected to a duplexer for an FDD (frequency division duplex) frequency band, Another throw among the throws of the above antenna switching circuit is connected to a second antenna different from the above antenna, The above FDD frequency band and the above TDD frequency band are used for EN-DC (EUTRAN (evolved UMTS terrestrial radio access network) NR (new radio) DC (dual connectivity)). Electronic devices.

10. In claim 1, a first switching circuit configured to selectively connect the coupler to one of the filter circuit or the feedback line; and Further comprising a second switching circuit configured to selectively connect the RF transceiver to one of the filter circuit or the feedback line. Electronic devices.

11. In claim 10, The above RF transceiver: When a feedback signal having an intensity lower than the threshold value is detected through the filter circuit after the first resistance value of the first variable resistor circuit and the second resistance value of the second variable resistor circuit are set: Controlling the first switching circuit to connect the coupler and the feedback line, Controlling the second switching circuit to connect the RF transceiver and the feedback line, Electronic devices.

12. In claim 11, The above RF transceiver: When a feedback signal having a strength greater than the threshold value is detected through the filter circuit after the first resistance value of the first variable resistor circuit and the second resistance value of the second variable resistor circuit are set: Controlling the first switching circuit to connect the coupler and the filter circuit, Controlling the second switching circuit to connect the RF transceiver and the filter circuit; Electronic devices.

13. In claim 1, The above RF transceiver comprises: In response to the signal having a strength greater than the threshold value, a control signal is generated, It is configured to transmit the above control signal to the RFFE circuit through a MIPI (mobile industry processor interface) interface, The RFFE circuit, in response to the control signal from the RF transceiver: Controlling the first variable resistor circuit to provide the first resistance value; configured to control the second variable resistor circuit to provide the second resistance value; Electronic devices.

14. In claim 1, The first variable resistor circuit includes a plurality of resistors and a switch for connecting each of the plurality of resistors to the gate of the corresponding transistor, The second variable resistor circuit includes a plurality of resistors and a switch for connecting each of the plurality of resistors to the gate of the corresponding transistor. Electronic devices.

15. In claim 1, The above specified frequency corresponds to 100 MHz (megahertz), The above filter circuit includes a LPF (low pass filter). Electronic devices.

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