Magnetic levitation thermal management system and method

Abstract

A semiconductor substrate transport apparatus includes a vacuum chamber, an array of electromagnets, a substrate handler, and a controller. The substrate handler includes at least one reaction platen disposed to cooperate with electromagnets of the array of electromagnets to controllably levitate and propel the substrate handler and an end effector for carrying a substrate. The controller is operably coupled to the array of electromagnets and a power source so as to move the reaction platen for transporting the substrate according to a process plan that describes static positions and moves of the substrate handler. The controller identifies an opportunity cooling period for opportunistic cooling of the substrate handler from the process plan where the substrate handler is in one of the static positions, and changes operation of the array of electromagnets and power source to effect the opportunistic cooling of the substrate handler in the identified opportunity cooling period.

Description

Atty. Docket No. 390P017238-WO (PCT) / Br3242MAGNETIC LEVITATION THERMAL MANAGEMENT SYSTEM AND METHODCROSS-REFERENCE TO RELATED APPLICATION(S)

[0001] This application is a non-provisional of and claims the benefit of United States provisional patent application number 63 / 689,424 filed on August 30, 2024, the disclosure of which is incorporated herein by reference in its entirety.BACKGROUND1. Field

[0002] The present disclosure generally relates to substrate processing apparatus, and more particularly, to structure of the substrate processing apparatus.2. Brief Description of Related Developments

[0003] Levitated substrate handlers for transporting substrates in an interior environment of transfer chambers are prone to overheating due to limited cooling capabilities. Overheating can result in de-magnetization of the substrate handlers due to magnets exceeding Curie temperatures. When substrate handlers reach temperature limits that could result in de-magnetization, there becomes a need to replace the substrate handler with a new substrate handler in order to reduce disruption of processing of wafers, which increases cost and efficiency of the system.

[0004] Accordingly, the present disclosure addresses a number of those issues.Atty. Docket No. 390P017238-WO (PCT) / Br3242BRIEF DESCRIPTION OF THE DRAWINGS

[0005] The foregoing aspects and other features of the present disclosure are explained in the following description, taken in connection with the accompanying drawings, wherein:

[0006] Fig. 1A is a schematic cross sectional illustration of a substrate transfer chamber, in accordance with the present disclosure;

[0007] Fig. IB is an exemplary perspective illustration of a substrate handler of the substrate transfer chamber of Fig. 1A, in accordance with the present disclosure;

[0008] Fig. 2 is an exemplary illustration of operation of the substrate transfer chamber of Fig. 1A, in accordance with the present disclosure;

[0009] Fig. 3 is an exemplary graph detailing levitation duty cycle vs transfer chamber length, in accordance with the present disclosure;

[0010] Fig. 4 is an exemplary graph detailing temperature of substrate handlers over time, in accordance with the present disclosure;

[0011] Fig. 5 is an exemplary graph detailing levitation duty cycle vs transfer chamber length, in accordance with the present disclosure;

[0012] Fig. 6 is an exemplary schematic block diagram of a substrate processing apparatus including the transport chamber of Fig. 1 A, in accordance with the present disclosure; and

[0013] Fig. 7 is an exemplary flow diagram of a method in accordance with the present disclosure.Atty. Docket No. 390P017238-WO (PCT) / Br3242DETAILED DESCRIPTION

[0014] The following detailed description is meant to assist the understanding of one skilled in the art, and is not intended in any way to unduly limit claims connected or related to the present disclosure.

[0015] The following detailed description references various figures, where like reference numbers refer to like components and features across various figures, whether specific figures are referenced, or not.

[0016] The word “each” as used herein refers to a single object (i.e., the object) in the case of a single object or each object in the case of multiple objects. The words “a,” “an,” and “the” as used herein are inclusive of “at least one” and “one or more” so as not to limit the object being referred to as being in its “singular” form.

[0017] Spatial terms such as “left,” “right,” “top,” “bottom,” “upper,” “lower,” “front,” “back,” “vertical,” and “horizontal” as may be used herein are by way of example and illustration only are not meant to limit the description and may be exchanged in position and orientation.

[0018] The terms “substantially” and “about” as may be used herein refer to a feature that may be varied within an acceptable manufacturing tolerance for a given application.

[0019] Figs. 1A and IB illustrates an exemplary semiconductor substrate transport vacuum chamber 100 (also referred to herein as a substrate transport chamber for convenience) in accordance with the present disclosure. Although the present disclosure will be described with reference to the drawings, it should be understood that the present disclosure can be embodied in many forms. In addition, any suitable size, shape or type of elements or materials could be used.

[0020] Referring also to Fig. 6, the substrate transport chamber 100 may be employed within any suitable substrate or workpiece processing / transport apparatus 800 (also referred to herein as a semiconductor substrate transport apparatus). The substrate processing apparatus 800 may beAtty. Docket No. 390P017238-WO (PCT) / Br3242 configured to process or otherwise transport any suitable substrates W (also referred to herein as workpieces) that may be transported to and from the substrate processing apparatus 800 in containers or earners 810. The substrates W may be semiconductor wafer, flat panels for flat panel displays, solar panels, reticles, edge rings, metrology wafers, nonproduction substrates, consumables, receptors (e.g., photo-resist) or any other suitable object.

[0021] Referring to Figs. 1A, IB, and 6, as will be described herein, the substrate processing apparatus 800 includes the substrate transport chamber 100, an array of electromagnets 102CE, a substrate handler 110, and a controller 899.

[0022] The substrate transport chamber 100 has a plurality of transport ports 100PRT that are each adapted to connect to a respective processing chamber or module PM. The substrate transport chamber 100 has a top 100T, side walls 100SW, and a bottom 100B. The bottom 100B is substantially level inside the substrate transport chamber 100. The substrate transport chamber 100 is capable of being sealed from an external atmosphere EXT in vacuum VAC (e.g., the interior of the substrate transport chamber 100 is capable of being sealed to hold a vacuum environment therein).

[0023] The array of electromagnets 102CE is connected to the substrate transport chamber 100 to form a drive plane DP at a predetermined height H relative to the substantially level bottom 100B. The array of electromagnets 102CE is arranged so that a series of electromagnets SER of the array of electromagnets 102CE define at least one drive line (e.g., along which the substrate handler 110 travels) within the drive plane DP. Each of the electromagnets in the array of electromagnets 102CE is coupled to a power source PS that energizes each electromagnet in the array of electromagnets 102CE.

[0024] The substrate handler 110 includes at least one reaction platen 111 (which may be referred to as a levitated body or base) constructed of any suitable conductive material. The at least one reaction platen 111 is disposed to cooperate with the electromagnets of the array of electromagnetsAtty. Docket No. 390P017238-WO (PCT) / Br3242102CEso that excitation of a plurality of the electromagnets generates levitation and propulsion forces against the at least one reaction platen 111 that controllably levitate and propel the substrate handler 110 along the at least one drive line, in a controlled attitude relative to the drive plane DP.

[0025] The substrate handler 110 includes an end effector 113 for carrying a substrate or substrate W. The end effector 113 is configured to stably hold the substrate or substrate W for transport through the substrate transport chamber 100, by way of movement of a respective reaction platen 111, according to a semiconductor process plan SPP.

[0026] The controller 899 is operably coupled to the array of electromagnets 102CE and the power source PS so as to move the reaction platen 111 along the at least one drive line for transporting the substrate according to the semiconductor process plan SPP. The semiconductor process plan SPP (which may be stored in a memory of the controller 899 or in a memory accessible by the controller 899) describes static positions of the substrate handler 110 and moves of the substrate handler 110 between the static positions. The controller 899 is configured to identify an opportunity cooling period for opportunistic (does not affect / decrease throughput of the substrate processing apparatus 800) cooling of the substrate handler 110, from the semiconductor process plan SPP where the substrate handler 110 is in one of the static positions. The controller 899 is configured to change the operation of the array of electromagnets 102CE and power source PS so as to effect the opportunistic cooling of the substrate handler 110 in the identified opportunity cooling period.

[0027] As will be described herein, the substrate processing apparatus 800 may include one or more of, employed individually, in any suitable combination thereof, and / or in any suitable combination with the features described herein: the controller 899 changes operation of the array of electromagnets 102CE and power source PS so that the reaction platen 111, levitating in the static position, is set down onto the bottom 100B of the substrate transport chamber 100, with the reaction platen 111 in contact, at least in part, with a thermal sink 105 region of the bottom 100B so that opportunity cooling is effected at least in part via heat conduction between reaction platenAtty. Docket No. 390P017238-WO (PCT) / Br324211 land thermal sink 105 region; the controller 899 is configured to determine a duration of the identified opportunity cooling period based on a duty cycle of the substrate handler 110 described by the semiconductor process plan SPP; the duty cycle is based, at least in pail, on a transport distance, of the transport of the substrate handler 110 in the substrate transport chamber 100, and of a dynamic constraint applied to the substrate handler movement in transport; the dynamic constraint is acceleration of the substrate handler 110 (see. e.g., Fig. 5); the duty cycle is affected by opportunistic cooling of the substrate handler 110, and wherein opportunistic cooling of the substrate handler 110, at least in part via the heat conduction, enables higher duty cycles characterized by longer transport distance compared to another transport distance of a radiantly cooled, levitated substrate handler lacking opportunistic cooling at least in part by heat conduction (see, e.g., Fig. 5); opportunistic cooling of the substrate handler 110, at least in part via the heat conduction, enables longer length substrate transport chamber 100 compared to another transport vacuum chamber with a radiantly cooled, levitated substrate handler lacking opportunity cooling at least in part by heat conduction (see, e.g., Fig. 5); the duty cycle is based at least in part on levitation duration at the predetermined levitation height, and opportunistic cooling of the substrate handler 110, at least in part via the heat conduction, enables higher duty cycles characterized by longer duration at the predetermined height, or higher height for a predetermined duration compared to another levitation duration, and height of a radiantly cooled, levitated substrate handler lacking opportunity cooling at least in part by heat conduction; the determined duration maintains the substrate handler at a temperature below a Curie temperature; the change in operation of the array of electromagnets 102CE and the power source PS effects contact between the at least one reaction platen 111 and the bottom 100B, where a contact area between the at least one reaction platen 111 and the bottom 100B comprises at least about 0.2% of the area of the at least one reaction platen 111; the contact area effects a duty cycle of the substrate handler 110 between about 75% and about 90%; another substrate handler 110 wherein, the substrate handler 110 is opportunistically cooled within a duration of substrate transport of the other substrate handler 110; the substrate handler 110 is opportunistically cooled within a duration of a processing operation of the substrate; the change in operation of the array of electromagnets 102CE and the powerAtty. Docket No. 390P017238-WO (PCT) / Br3242 source PS effects contact between the at least one reaction platen 111 and the bottom 100B, where contact between the at least one reaction platen and the bottom comprises a point contact; and levitation of the substrate handler is an electrodynamic levitation or an electromagnetic levitation.

[0028] Still referring to Figs. 1 and 6, the substrate processing apparatus 800 includes a front end 801 and a process section 820. The front end 801 generally includes a load port module 805 and a mini-environment 806 such as for example an equipment front-end module (EFEM). The load port module 805 may be box opener / loader to tool standard (BOLTS) interfaces that conform to SEMI standards E15.1, E47.1, E62, El 9.5 or El.9 for 300 mm load ports, front opening or bottom opening boxes / pods and cassettes. The load port modules may be configured as 200 mm wafer / substrate interfaces, 450 mm wafer / substrate interfaces or any other suitable substrate interfaces such as for example larger or smaller semiconductor wafers / substrates, flat panels for flat panel displays, solar panels, reticles or any other suitable object such as described herein. Any suitable number of load ports modules 805 may be provided. The load port module 805 may be configured to receive the containers or carriers 810 from an overhead transport system, automatic guided vehicles, person guided vehicles, rail guided vehicles or from any other suitable transport method. The load port module 805 may interface with the mini-environment 806 through one or more load ports 807 of the load port module(s) 805. The load ports 807 may allow the passage of substrates W between the containers 810 and the mini-environment 806.

[0029] The mini-environment 806 generally includes any suitable transport apparatus 808, such as any suitable automated transport robot / apparatus 808 for transporting substrates W to and from the containers 810 through respective load ports 807. The transport apparatus 808 may be a track mounted robot such as that described in, for example, United States Patents 6,002,840 issued on December 14, 1999; 8,419,341 issued April 16, 2013; and 7,648,327 issued on January 19, 2010, the disclosures of which are incorporated by reference herein in their entireties, although the transport apparatus 808 may not be track mounted. The mini-environment 806 may provide a controlled, clean zone for substrate transfer between one or multiple load port modules and the process section 820.Atty. Docket No. 390P017238-WO (PCT) / Br3242

[0030] The process section 820 may operate on the substrates W through various deposition, etching, or other types of high vacuum processes to form electrical circuitry or other desired structure on the substrates W. Typical processes include but are not limited to thin film processes that use a vacuum such as plasma etch or other etching processes, chemical vapor deposition (CVD), plasma vapor deposition (PVD), implantation such as ion implantation, metrology, rapid thermal processing (RTP), dry strip atomic layer deposition (ALD), oxidation / diffusion, forming of nitrides, vacuum lithography, epitaxy (EPI), wire bonder and evaporation or other thin film processes that use vacuum pressures. The process section 820 may include suitable transport apparatus and / or other automation for transporting and processing the substrates W.

[0031] The process section 820 includes one or more load locks 850 and a substrate transport chamber 100. The transport chamber 100 has an isolated environment therein and the load locks 850 are cycled between the isolated environment of the transfer chamber 100 and the environment of the mini-environment 806 for transferring substrates W to and from the transport chamber 100; although the load locks 850 may be coupled directly to the interior of the container(s) 810, where an interior environment of the container(s) 810 is the same as the isolated environment to substantially reduce or eliminate cycling of the load lock 850 during substrate W processing. The transfer chamber 100 may have an elongated substantially hexahedron shape with processing chambers or modules PM arrayed along one or more sides of the transfer chamber 100. Any suitable number of process modules PM may be coupled to the transfer chamber 100 through a corresponding number of transport ports 100PRT (see Fig. 1 A), which transport ports 100PRT are sealable such as with a respective slot valve SV or in any other suitable manner. Any suitable substrate transport apparatus 888 may be provided, at least partially, within the isolated environment of the transfer chamber 100 for transporting substrates W between the process modules PM and the load locks 850 (or directly to the containers 810).

[0032] The controller 899 may be coupled to the substrate processing apparatus 800 for effecting processing of substrates W through the operation (e.g., under control of the controller 899) of at least the process modules PM and substrate transport apparatus 808, 888.Atty. Docket No. 390P017238-WO (PCT) / Br3242

[0033] Referring again to Figs. 1 A and IB, the substrate transport chamber 100 may be employed to transport any suitable substrates including, but not limited to, semiconductor substrates, flat panels for flat panel displays, non-production substrates, reticles, and other substrates as noted above. The substrate transport chamber 100 includes an interior 101 having an interior environment and a drive section 102 (the drive section 102 may form at least a portion of the transport apparatus 888). The interior environment of the interior 101 may be any suitable isolated environment including, but not limited to, a vacuum environment, inert gas environment, and controlled air environment. The drive section 102 is a coil drive system 102C that is configured to levitate (e.g., in any suitable manner including but not limited to electrodynamic levitation, electromagnetic levitation, etc.) one or more substrate handlers 110 (the substrate handlers 110 may form at least a portion of the transport apparatus 888) within the interior 101, where the substrate handlers 110 effect transport of the substrates W.

[0034] Each of the substrate handlers 110 includes the reaction platen 111 and the end effector 113 where the end effector 113 is connected to the reaction platen 111 in any suitable manner, such as by a wrist plate 112 or directly to the reaction platen 111, so as to move in unison with the reaction platen 111. The end effector 113 includes a substrate holding station SHS configured to hold a substrate W. The substrate W may be a “hot” substrate having a temperature substantially similar to or the same as a process temperature at which the substrate W was processed in a process module PM or a “cold” substrate (not yet processed in the substrate processing apparatus 800).

[0035] The interior 101 of the substrate transport chamber 100, and the interior environment thereof, is isolated from the coil drive system 102C by any suitable isolation wall 150. The isolation wall 150 may be constructed of any suitable non-magnetic material, including but not limited to stainless steel, so as not to interfere with the magnetic field produced by the coil drive system 102C to levitate the substrate handlers 110. The isolation wall 150 may form at least a portion of the bottom 100B of the substrate transport chamber 100 and be constructed of a thermally conductive material, including but not limited to stainless steel and may allow for heat to dissipate from, for example, a side of the isolation wall 150 (e.g., the bottom 100B) exposed toAtty. Docket No. 390P017238-WO (PCT) / Br3242 the interior environment of the interior 101 to the exterior environment, the exterior environment being exterior to the interior 101 (e.g., such as an atmospheric environment in which the array of electromagnets 102CE of the coil drive system 102C is disposed). The isolation wall 150, as described herein, may include a combination of materials that are structurally bonded and may yield mechanical, thermal, and magnetic properties to at least effect thermal / heat dissipation or transfer from, for example, the substrate handlers 110 to any suitable cooling medium (e.g., cooling fluid) within the exterior environment and / or within the isolation wall 150. Suitable examples of isolation walls are described in United States Provisional Application Number 63 / 689,374 filed on August 30, 2024, and its corresponding International patent application titled “Isolation Wall and Transfer Chamber including the Isolation Wall,” filed on August 29, 2025 and having application number PCT / US25 / 44127 and Attorney Docket Number 390P017237-WO (PCT), the disclosures of which are incorporated herein by reference in their entireties.

[0036] As may be realized, during operation of the one or more substrate handlers 110 (i.e., with the reaction platen 111 being levitated by the coil drive system 102C), Eddy Currents induced on the reaction platen 111 (or heat generated by other types of levitation) and hot substrates W positioned on the end effector 113 may cause an increase in temperature of the one or more substrate handlers 110. An increase in temperature of the one or more substrate handlers 110, and particularly the reaction platen 111, increases electrical resistivity, which in turn reduces the efficiency of the coil drive system 102C system (i.e., reduces the induction of Eddy Currents and the levitation force exerted on the reaction platen 111 by the coil drive system 102C). In order to reduce overheating and / or de-magnetization of the reaction platen 111 as a result of levitation or handling hot substrates W, the present disclosure provides opportunistic cooling of the one or more substrate handlers 110 via a thermal management strategy as described herein. The thermal management strategy may be based on motion scheduling of the semiconductor process plan SPP that enables the reaction platen 111 to cool down during dwell times inherent from a typical substrate W processing flow of the semiconductor process plan SPP. For example, dwell time opportunities may exist during one or more of: a duration for a substrate swap at a substrate holdingAtty. Docket No. 390P017238-WO (PCT) / Br3242 station, a duration in which a slot valve is opened and / or closed, a processing time of a substrate W in a process module PM, etc. During these, what may be referred to as dwell times, the one or more substrate handlers 110 may be disposed at a corresponding static position (e.g., not moving at a position adjacent a transport port 100PRT or other predetermined position) and controlled to opportunistically “land” or otherwise contact / set down, at least in part, on the bottom 100B (e.g., in a thermal sink 105 region) of the transfer chamber 100. The bottom 100B may be formed by the isolation wall 150 which, as noted above, may act as a thermal sink 105 to opportunistically dissipate or draw heat from, or otherwise cool, the reaction platen 111 of the one or more substrate handlers 110.

[0037] In accordance with the present disclosure, the substrate processing apparatus 100 described herein is configured with a thermal management protocol TMP (see Fig. 6), which may be a part of the semiconductor process plan SPP or be effected in conjunction with or separate from, but informed by, the semiconductor process plan SPP. The thermal management protocol TMP is configured to effect temperature control (e.g., thermal management) of the one or more substrate handlers 110. The thermal management protocol TMP may account for any impact a length of the transport chamber 100 has on the levitation duty cycle of the one or more substrate handlers 110 (see Fig. 3) so that the duty cycle of the one or more substrate handlers 110, with the thermal management protocol TMP active, meets or exceeds a required duty cycle for the given transport chamber 100 length (see also Fig. 5). As illustrated in Fig. 5, the duty cycle may be based, at least in part, on a transport distance, of the transport of the substrate handler 110 in the substrate transport chamber 100, and of a dynamic constraint applied to the substrate handler movement in transport. The dynamic constraint is acceleration (shown as 0.1 G and 0.3G but may be more than 0.3G or less than 0.1G or therebetween) of the substrate handler 110. As illustrated in Fig. 5, the duty cycle may be affected by opportunistic cooling of the substrate handler 110, where opportunistic cooling of the substrate handler 110, at least in part via the heat conduction, enables higher duty cycles characterized by longer transport distance compared to another transport distance of a radiantly cooled, levitated substrate handler lacking opportunistic cooling at least inAtty. Docket No. 390P017238-WO (PCT) / Br3242 part by heat conduction. The opportunistic cooling of the substrate handler 110, at least in part via the heat conduction, enables longer length substrate transport chamber 100 (with chamber lengths illustrated as being up to and including 8m but longer lengths are possible as evidenced by the slope of the line corresponding to the required duty cycle at 0.1G and 0.3G acceleration - see also Fig. 3) compared to another transport vacuum chamber with a radiantly cooled, levitated substrate handler lacking opportunity cooling at least in part by heat conduction. The duty cycle may be based at least in part on levitation duration at the predetermined levitation height H (see Fig. 1A), and opportunistic cooling of the substrate handler 110, at least in part via the heat conduction, enables higher duty cycles characterized by longer duration at the predetermined height H, or higher height for a predetermined duration compared to another levitation duration, and height of a radiantly cooled, levitated substrate handler lacking opportunity cooling at least in part by heat conduction.

[0038] The thermal management protocol TMP may be effected by the controller 899 in any suitable manner, such as through (at least in part) control of the coil drive system 102C. A temperature of the reaction platen 111 of the one or more substrate handlers 110 is thermally managed so as to maintain a predetermined levitation efficiency. The controller 899 includes or is configured with the thermal management protocol TMP to effect a cooling cycle(s) of the one or more substrate handlers 110 to, at least, maintain the reaction platen 111 within a predetermined temperature range (e.g., a temperature range that is below, for example the Curie temperature where the coil drive system 102C employs some form of magnetization, or below any other suitable temperature so that any suitable levitation of the substrate handlers 110 (e.g., electromagnetic levitation, electrodynamic levitation, superconductor-based levitation, diamagnetic levitation, inductive levitation, etc.) provided by the coil drive system 102C remains at an optimal efficiency).

[0039] The thermal management protocol TMP controls the temperature of the reaction platen 111 via (e.g., with) conduction from the reaction platen 111 to a thermal sink 105 region (which may be passive conductive cooling from the bottom 100B or active cooling of the bottom 100B)Atty. Docket No. 390P017238-WO (PCT) / Br3242 commensurate with (e.g., within a time of) at least a processing operation (such as described herein) of the substrate W. The controller 899 may activate (or deactivate) the coil drive system 102C (or a portion thereof) so that the reaction platen 111 lowers to seat (e.g., land or set down) on the bottom 100B of the transport chamber 100 with the reaction platen 111 in contact, at least in part, with the thermal sink 105 region of the bottom 100B. Heat is dissipated from the reaction platen 111 to the bottom 100B via conduction from the reaction platen 111 through the bottom 100B (e.g., where, as noted herein, the isolation wall 150 forms the floor 105) towards the atmospheric side of the bottom 100B where the coil drive system 102C is disposed.

[0040] The bottom 100B may include cooling lines provided in and / or around the drive section 102 so as to cool (such as by convection) one or more of the coils of the coil drive system 102C and the isolation wall 150 (which forms at last part of the bottom 100B including the thermal sink 105 region). Cooling of the isolation wall 150 may provide for active cooling of the reaction platen 111 in contact with the bottom 100B. The cooling lines may be arranged so that cooling fluid passing through the cooling lines flows from a cooling fluid inlet, into and in between (such as through a wall, that may be the same or different than the isolation wall 150, that separates) the interior 101 of the substrate transfer chamber 100 and the interior of the drive section 102, and to a cooling fluid outlet. Suitable examples of cooling lines are described in United States Provisional Application Number 63 / 689,374 filed on August 30, 2024, and its corresponding International patent application titled “Isolation Wall and Transfer Chamber including the Isolation Wall,” filed on August 29, 2025 and having application number PCT / US25 / 44127 and Attorney Docket Number 390P017237-WO (PCT), the disclosures of which were previously incorporated herein by reference in their entireties.

[0041] As seen in Figs. 2-6, the cooling of the reaction platen 111 may occur opportunistically such as during a wafer exchange operation (e.g., a swapping or transfer of one or more wafers at any suitable substrate holding station (load lock, process module, etc.). For example, where the transfer chamber 100 includes two substrate handlers 110A, 110B (which are the same as / similar to substrate handler 110 described herein), one of the substrate handlers 110A (e.g., which may beAtty. Docket No. 390P017238-WO (PCT) / Br3242 dedicated to the handling of unprocessed substrates WA) may wait or sit idle while another of the substrate handlers HOB (e.g., which may be dedicated the handling of processed substrates WB) completes a pick / place operation at the load lock 850 or process module PM. With the substrate handler 110A picking / placing the unprocessed substrate WA, the idle substrate handler HOB is lowered to set down on the bottom so as to cool the reaction platen 111 of the substrate handler 110B. Similarly, with the substrate handler 110B picking / placing the processed substrate WB, the idle substrate handler 110A is lowered so as to set down on the bottom 100B to cool off the reaction platen 111 of the substrate handler 110A.

[0042] In general, referring to Figs. 1A, IB, 2, and 6, an exemplary operation of processing a substrate W may occur as follows, in accordance with the semiconductor process plan SPP: the load lock 850 is opened and substrate handler 110A moves to pick an unprocessed substrate WA while substrate handler 110B is waiting (dwells) to place a processed wafer in the load lock 850. During this dwell time, substrate handler HOB is set down on the bottom 100B so as to conductively cool the reaction platen 111 of the substrate handler HOB. Upon picking of the unprocessed substrate WA by the substrate handler 110A, both substrate handlers 110A, 110B become active in transporting substrates so as to pick / place a respectively held substrate WA, WB. Once substrate handler 110A reaches the process module PM, the substrate handler 110A waits / dwells during opening of the process module PM transport port 100PRT. During this dwell time, the substrate handler 110A is set down on the bottom 100B so as to cool the reaction platen 111 of the substrate handler 110A. Once the process module PM transport port 100PRT is open, substrate handler 110A is raised / levitated by the coil drive system 102C to transfer / place the wafer WA to the process module PM and return to the load lock 850 to pick another unprocessed substrate WA. Upon processing of the substrate WA (now substrate WB), the substrate handler 110B is controlled by the coil drive system 102C (operating under the control of controller 899) to pick the processed wafer WB. The substrate handler 110B travels to the process module PM. Upon reaching the process module PM, the substrate handler 110B waits / dwells while waiting for the process module PM transport port 100PRT to open. During this dwell time, the substrateAtty. Docket No. 390P017238-WO (PCT) / Br3242 handler 110B is set down on the bottom 100B so as to cool the reaction platen 111 of the substrate handler HOB. With the process module PM transport port 100PRT open, substrate handler HOB is raised / levitated by the coil drive system 102C so as to move to pick and transfer the processed wafer WB from the process module PM to the load lock 850. During each of these dwell times, e.g., during wafer swap at a station, during load lock opening and closing durations, during processing times in the process module PM, etc., the controller 899 executes the thermal management protocol TMP to control the substrate handlers 110, 110A, HOB contact with the bottom 100B so as to cool the substrate handlers 110, 110A, HOB and maintain the substrate handlers 110, 110A, 110B below the predetermined temperature.

[0043] The duration that the reaction platen 111 is in contact with the bottom 100B may be the entire duration of the dwell time or less than the dwell time. The controller 899 is configured to determine the duration of the identified opportunity cooling period (such as described above with the thermal management plan TMP based on the substrate process plan SPP or in any other suitable manner) based on a duty cycle of the substrate handler 110 described by the semiconductor process plan SPP.

[0044] Fig. 4 illustrates an exemplary thermal cycle of a substrate handler 110 for varying degrees (percentages) of contact between the reaction platen 111 of the substrate handler 110 and the bottom 100B. As illustrated in Fig. 4, the predetermined temperature (e.g., maximum temperature) which the reaction platen 111 may not exceed may be between about 100°C and about 95°C although, the predetermined temperature may be any suitable temperature more than 100°C or less than about 95°C. With the reaction platen 111 of the substrate handler 110 at the predetermined temperature and with no contact between the reaction platen 111 and the bottom 100B, the time to cool the reaction platen 111 to a temperature of 85°C or less is greater than a given dwell time (as noted above) of the substrate handler 110, which may result in an overheating of the reaction platen 111 above the predetermined temperature and / or a decrease in throughput of the substrate processing apparatus 800. With at least a contact area of about 0.2% (of the area of the reaction platen 111) or greater between the reaction platen 111 and the bottom 100B, the time to cool theAtty. Docket No. 390P017238-WO (PCT) / Br3242 reaction platen 111 from the predetermined temperature to a temperature of 85°C or less is within a given dwell time (as noted above) of the substrate handler 110. As illustrated in Fig. 5, increasing the contact area between the reaction platen 111 and the bottom 100B increases the duty cycle of the substrate handler 110 for a given transport chamber 100 length so that with contact of the reaction platen 111 with the bottom 100B with a contact area of about 0.2% (of the area of the reaction platen 111) provides a levitation duty cycle of about 75% which exceeds a required duty cycle of the substrate handler 110 for movement within a transport chamber 100 having a length of at least about 8 m. A contact area of about 100% between the reaction platen 111 and the bottom 100B provides a levitation duty cycle of about 90%. The contact between the reaction platen 111 and the bottom may be effected with a point contact, such as a point contact of about 3 mm although, the point contact may be more or less than about 3 mm.

[0045] Referring to Figs. 1A-7, an exemplary method will be described in accordance with the present disclosure. The method includes providing the substrate processing apparatus 800 (Fig. 7, Block 700). As described herein, the substrate processing apparatus 800 includes the substrate transport chamber 100, an array of electromagnets 102CE, a substrate handler 110, and the controller 899.

[0046] The substrate transport chamber 100 has a plurality of transport ports 100PRT that are each adapted to connect to a respective processing chamber or module PM. The substrate transport chamber 100 has a top 100T, side walls 100SW, and a bottom 100B. The bottom 100B is substantially level inside the substrate transport chamber 100. The substrate transport chamber 100 is capable of being sealed from an external atmosphere EXT in vacuum VAC (e.g., the interior of the substrate transport chamber 100 is capable of being sealed to hold a vacuum environment therein).

[0047] The array of electromagnets 102CE is connected to the substrate transport chamber 100 to form a drive plane DP at a predetermined height H relative to the substantially level bottom 100B. The array of electromagnets 102CE is arranged so that a series of electromagnets SER of the arrayAtty. Docket No. 390P017238-WO (PCT) / Br3242 of electromagnets 102CE define at least one drive line (e.g., along which the substrate handler 110 travels) within the drive plane DP. Each of the electromagnets in the array of electromagnets 102CE is coupled to a power source PS that energizes each electromagnet in the array of electromagnets 102CE.

[0048] The substrate handler 110 includes at least one reaction platen 111 (which may be referred to as a levitated body or base) constructed of any suitable conductive material. The at least one reaction platen 111 is disposed to cooperate with the electromagnets of the array of electromagnets 102CEso that excitation of a plurality of the electromagnets generates levitation and propulsion forces against the at least one reaction platen 111 that controllably levitate and propel the substrate handler 110 along the at least one drive line, in a controlled attitude relative to the drive plane DP.

[0049] The substrate handler 110 includes an end effector 113 for carrying a substrate or substrate W. The end effector 113 is configured to stably hold the substrate or substrate W for transport through the substrate transport chamber 100, by way of movement of a respective reaction platen 111, according to a semiconductor process plan SPP.

[0050] The controller 899 is operably coupled to the array of electromagnets 102CE and the power source PS so as to move the reaction platen 111 along the at least one drive line for transporting the substrate according to the semiconductor process plan SPP. The semiconductor process plan SPP (which may be stored in a memory of the controller 899 or in a memory accessible by the controller 899) describes static positions of the substrate handler 110 and moves of the substrate handler 110 between the static positions.

[0051] The method includes identifying, with the controller 899, an opportunity cooling period (Fig. 7, Block 720) for opportunistic cooling of the substrate handler 110, from the semiconductor process plan SPP where the substrate handler 110 is in one of the static positions. The controller 899 changes the operation of the array of electromagnets 102CE and power source PS so as toAtty. Docket No. 390P017238-WO (PCT) / Br3242 effect the opportunistic cooling (Fig. 7, Block 730) of the substrate handler 110 in the identified opportunity cooling period.

[0052] The method may include one or more of, employed individually, in any suitable combination thereof, and / or in any suitable combination with the features described herein: the controller 899 changes operation of the array of electromagnets 102CE and power source PS so that the reaction platen 111, levitating in the static position, is set down onto the bottom 100B of the substrate transport chamber 100, with the reaction platen 111 in contact, at least in part, with a thermal sink 105 region of the bottom 100B so that opportunity cooling is effected at least in part via heat conduction between reaction platen 111 and thermal sink 105 region; the controller 899 is configured to determine a duration of the identified opportunity cooling period based on a duty cycle of the substrate handler 110 described by the semiconductor process plan SPP; the duty cycle is based, at least in part, on a transport distance, of the transport of the substrate handler 110 in the substrate transport chamber 100, and of a dynamic constraint applied to the substrate handler movement in transport; the dynamic constraint is acceleration of the substrate handler 110 (see. e.g., Fig. 5); the duty cycle is affected by opportunistic cooling of the substrate handler 110, and wherein opportunistic cooling of the substrate handler 110, at least in part via the heat conduction, enables higher duty cycles characterized by longer transport distance compared to another transport distance of a radiantly cooled, levitated substrate handler lacking opportunistic cooling at least in part by heat conduction (see, e.g., Fig. 5); opportunistic cooling of the substrate handler 110, at least in part via the heat conduction, enables longer length substrate transport chamber 100 compared to another transport vacuum chamber with a radiantly cooled, levitated substrate handler lacking opportunity cooling at least in part by heat conduction (see, e.g., Fig. 5); the duty cycle is based at least in pail on levitation duration at the predetermined levitation height, and opportunistic cooling of the substrate handler 110, at least in part via the heat conduction, enables higher duty cycles characterized by longer duration at the predetermined height, or higher height for a predetermined duration compared to another levitation duration, and height of a radiantly cooled, levitated substrate handler lacking opportunity cooling at least in part by heat conduction; theAtty. Docket No. 390P017238-WO (PCT) / Br3242 determined duration maintains the substrate handler at a temperature below a Curie temperature; the change in operation of the array of electromagnets 102CE and the power source PS effects contact between the at least one reaction platen 111 and the bottom 100B, where a contact area between the at least one reaction platen 111 and the bottom 100B comprises at least about 0.2% of the area of the at least one reaction platen 111; the contact area effects a duty cycle of the substrate handler 110 between about 75% and about 90%; another substrate handler 110 wherein, the substrate handler 110 is opportunistically cooled within a duration of substrate transport of the other substrate handler 110; the substrate handler 110 is opportunistically cooled within a duration of a processing operation of the substrate; the change in operation of the array of electromagnets 102CE and the power source PS effects contact between the at least one reaction platen 111 and the bottom 100B, where contact between the at least one reaction platen and the bottom comprises a point contact; and levitation of the substrate handler is an electrodynamic levitation or an electromagnetic levitation.

[0053] The following are provided in accordance with the present disclosure and may be employed individually, in any suitable combination with each other, and / or in any suitable combination with the features described herein:

[0054] A semiconductor substrate transport apparatus includes: a semiconductor substrate transport vacuum chamber, having a plurality of transport ports that are each adapted to connect to a respective processing chamber, the semiconductor substrate transport vacuum chamber comprising a top, side walls, and a bottom that is substantially level inside the semiconductor substrate transport vacuum chamber, and being capable of being sealed from an external environment in vacuum; an array of electromagnets, connected to the semiconductor substrate transport vacuum chamber to form a drive plane at a predetermined height relative to the substantially level bottom, the array of electromagnets being arranged so that a series of electromagnets of the array of electromagnets define at least one drive line within the drive plane, and each of the electromagnets being coupled to a power source energizing each electromagnet; and a substrate handler, comprising: at least one reaction platen of conductive material, disposedAtty. Docket No. 390P017238-WO (PCT) / Br3242 to cooperate with the electromagnets of the array of electromagnets so that excitation of a plurality of the electromagnets generates levitation and propulsion forces against the at least one reaction platen that controllably levitate and propel the substrate handler along the at least one drive line, in a controlled attitude relative to the drive plane, and an end effector for carrying a substrate, the end effector being configured to stably hold the substrate for transport through the semiconductor substrate transport vacuum chamber, by way of movement of a respective reaction platen, according to a semiconductor process plan. The semiconductor substrate transport apparatus includes a controller operably coupled to the array of electromagnets and the power source so as to move the reaction platen along the at least one drive line for transporting the substrate according to the semiconductor process plan that describes static positions of the substrate handler and moves of the substrate handler between the static positions, the controller being configured to identify an opportunity cooling period for opportunistic cooling of the substrate handler, from the semiconductor process plan where the substrate handler is in one of the static positions, and wherein the controller changes operation of the array of electromagnets and power source so as to effect the opportunistic cooling of the substrate handler in the identified opportunity cooling period.

[0055] The semiconductor substrate transport apparatus may include one or more of, employed individually, in any suitable combination thereof, and / or in any suitable combination with the features described herein: the controller changes operation of the array of electromagnets and power source so that the reaction platen, levitating in the static position, is set down onto the bottom of the semiconductor substrate transport vacuum chamber, with the reaction platen in contact, at least in part, with a thermal sink region of the bottom so that opportunity cooling is effected at least in part via heat conduction between reaction platen and thermal sink region; the controller is configured to determine a duration of the identified opportunity cooling period based on a duty cycle of the substrate handler described by the semiconductor process plan; the determined duration maintains the substrate handler at a temperature below a Curie temperature; the change in operation of the array of electromagnets and the power source effects contactAtty. Docket No. 390P017238-WO (PCT) / Br3242 between the at least one reaction platen and the bottom, where a contact area between the at least one reaction platen and the bottom comprises at least about 0.2% of the area of the at least one reaction platen; the contact area effects a duty cycle of the substrate handler between about 75% and about 90%; another substrate handler wherein, the substrate handler is opportunistically cooled within a duration of substrate transport of the other substrate handler; the substrate handler is opportunistically cooled within a duration of a processing operation of the substrate; the change in operation of the array of electromagnets and the power source effects contact between the at least one reaction platen and the bottom, where contact between the at least one reaction platen and the bottom comprises a point contact; and levitation of the substrate handler is an electrodynamic levitation or an electromagnetic levitation.

[0056] A method includes providing a semiconductor substrate transport apparatus comprising: a semiconductor substrate transport vacuum chamber, having a plurality of transport ports that are each adapted to connect to a respective processing chamber, the semiconductor substrate transport vacuum chamber comprising a top, side walls, and a bottom that is substantially level inside the semiconductor substrate transport vacuum chamber, and being capable of being sealed from an external environment in vacuum; an array of electromagnets, connected to the semiconductor substrate transport vacuum chamber to form a drive plane at a predetermined height relative to the substantially level bottom, the array of electromagnets being arranged so that a series of electromagnets of the array of electromagnets define at least one drive line within the drive plane, and each of the electromagnets being coupled to a power source energizing each electromagnet; a substrate handler, comprising: at least one reaction platen of conductive material, disposed to cooperate with the electromagnets of the array of electromagnets so that excitation of a plurality of the electromagnets generates levitation and propulsion forces against the at least one reaction platen that controllably levitate and propel the substrate handler along the at least one drive line, in a controlled attitude relative to the drive plane, and an end effector for carrying a substrate, the end effector being configured to stably hold the substrate for transport through the semiconductor substrate transport vacuum chamber, by way of movement of a respective reaction platen,Atty. Docket No. 390P017238-WO (PCT) / Br3242 according to a semiconductor process plan; and a controller operably coupled to the array of electromagnets and the power source so as to move the reaction platen along the at least one drive line for transporting the substrate according to the semiconductor process plan that describes static positions of the substrate handler and moves of the substrate handler between the static positions. The method includes identifying, with the controller, an opportunity cooling period for opportunistic cooling of the substrate handler, from the semiconductor process plan where the substrate handler is in one of the static positions; and changing, with the controller, operation of the array of electromagnets and power source so as to effect the opportunistic cooling of the substrate handler in the identified opportunity cooling period.

[0057] The semiconductor substrate transport apparatus may include one or more of, employed individually, in any suitable combination thereof, and / or in any suitable combination with the features described herein: the controller changes operation of the array of electromagnets and power source so that the reaction platen, levitating in the static position, is set down onto the bottom of the semiconductor substrate transport vacuum chamber, with the reaction platen in contact, at least in part, with a thermal sink region of the bottom so that opportunity cooling is effected at least in part via heat conduction between reaction platen and thermal sink region; the controller is configured to determine a duration of the identified opportunity cooling period based on a duty cycle of the substrate handler described by the semiconductor process plan; the determined duration maintains the substrate handler at a temperature below a Curie temperature; the change in operation of the array of electromagnets and the power source effects contact between the at least one reaction platen and the bottom, where a contact area between the at least one reaction platen and the bottom comprises at least about 0.2% of the area of the at least one reaction platen; the contact area effects a duty cycle of the substrate handler between about 75% and about 90%; another substrate handler wherein, the substrate handler is opportunistically cooled within a duration of substrate transport of the other substrate handler; the substrate handler is opportunistically cooled within a duration of a processing operation of the substrate; the change in operation of the array of electromagnets and the power source effects contact between the at leastAtty. Docket No. 390P017238-WO (PCT) / Br3242 one reaction platen and the bottom, where contact between the at least one reaction platen and the bottom comprises a point contact; and levitation of the substrate handler is an electrodynamic levitation or an electromagnetic levitation.

[0058] It should be understood that the foregoing description is only illustrative of the present disclosure. Various alternatives and modifications can be devised by those skilled in the art without departing from the present disclosure. Accordingly, the present disclosure is intended to embrace all such alternatives, modifications and variances that fall within the scope of any claims appended hereto. Further, the mere fact that different features are recited in mutually different dependent or independent claims does not indicate that a combination of these features cannot be advantageously used, such a combination remaining within the scope of the present disclosure.

[0059] What is claimed is:

Claims

Atty. Docket No. 390P017238-WO (PCT) / Br3242CLAIMS1. A semiconductor substrate transport apparatus comprising: a semiconductor substrate transport vacuum chamber, having a plurality of transport ports that are each adapted to connect to a respective processing chamber, the semiconductor substrate transport vacuum chamber comprising a top, side walls, and a bottom that is substantially level inside the semiconductor substrate transport vacuum chamber, and being capable of being sealed from an external environment in vacuum; an array of electromagnets, connected to the semiconductor substrate transport vacuum chamber to form a drive plane at a predetermined height relative to the substantially level bottom, the array of electromagnets being arranged so that a series of electromagnets of the array of electromagnets define at least one drive line within the drive plane, and each of the electromagnets being coupled to a power source energizing each electromagnet; a substrate handler, comprising: at least one reaction platen of conductive material, disposed to cooperate with the electromagnets of the array of electromagnets so that excitation of a plurality of the electromagnets generates levitation and propulsion forces against the at least one reaction platen that controllably levitate and propel the substrate handler along the at least one drive line, in a controlled attitude relative to the drive plane, and an end effector for carrying a substrate, the end effector being configured to stably hold the substrate for transport through the semiconductor substrate transport vacuum chamber, by way of movement of a respective reaction platen, according to a semiconductor process plan; and a controller operably coupled to the array of electromagnets and the power source so as to move the reaction platen along the at least one drive line for transporting the substrate according to theAtty. Docket No. 390P017238-WO (PCT) / Br3242 semiconductor process plan that describes static positions of the substrate handler and moves of the substrate handler between the static positions, the controller being configured to identify an opportunity cooling period for opportunistic cooling of the substrate handler, from the semiconductor process plan where the substrate handler is in one of the static positions, and wherein the controller changes operation of the array of electromagnets and power source so as to effect the opportunistic cooling of the substrate handler in the identified opportunity cooling period.

2. The semiconductor substrate transport apparatus of claim 1, wherein the controller changes operation of the array of electromagnets and power source so that the reaction platen, levitating in the static position, is set down onto the bottom of the semiconductor substrate transport vacuum chamber, with the reaction platen in contact, at least in part, with a thermal sink region of the bottom so that opportunity cooling is effected at least in part via heat conduction between reaction platen and thermal sink region.

3. The semiconductor substrate transport apparatus of claim 1, wherein the controller is configured to determine a duration of the identified opportunity cooling period based on a duty cycle of the substrate handler described by the semiconductor process plan.

4. The semiconductor substrate transport apparatus of claim 3, wherein the duty cycle is based, at least in part, on a transport distance, of the transport of the substrate handler in the semiconductor substrate transport vacuum chamber, and of a dynamic constraint applied to the substrate handler movement in transport.

5. The semiconductor substrate transport apparatus of claim 4, wherein the dynamic constraint is acceleration of the substrate handler.

6. The semiconductor substrate transport apparatus of claim 3, wherein the duty cycle is affected by opportunistic cooling of the substrate handler, and wherein opportunistic cooling of the substrate handler, at least in part via the heat conduction, enables higher duty cyclesAtty. Docket No. 390P017238-WO (PCT) / Br3242 characterized by longer transport distance compared to another transport distance of a radiantly cooled, levitated substrate handler lacking opportunistic cooling at least in part by heat conduction.

7. The semiconductor substrate transport apparatus of claim 1, wherein opportunistic cooling of the substrate handler, at least in pail via the heat conduction, enables longer length transport vacuum chamber compared to another transport vacuum chamber with a radiantly cooled, levitated substrate handler lacking opportunity cooling at least in part by heat conduction.

8. The semiconductor substrate transport apparatus of claim 1 , wherein the duty cycle is based at least in part on levitation duration at the predetermined levitation height, and opportunistic cooling of the substrate handler, at least in part via the heat conduction, enables higher duty cycles characterized by longer duration at the predetermined height, or higher height for a predetermined duration compared to another levitation duration, and height of a radiantly cooled, levitated substrate handler lacking opportunity cooling at least in part by heat conduction.

9. The semiconductor substrate transport apparatus of claim 1, wherein the change in operation of the array of electromagnets and the power source effects contact between the at least one reaction platen and the bottom, where a contact area between the at least one reaction platen and the bottom comprises at least about 0.2% of the area of the at least one reaction platen.

10. The semiconductor substrate transport apparatus of claim 9, wherein the contact area effects a duty cycle of the substrate handler between about 75% and about 90%.

11. A method comprising: providing a semiconductor substrate transport apparatus comprising: a semiconductor substrate transport vacuum chamber, having a plurality of transport ports that are each adapted to connect to a respective processing chamber, the semiconductor substrate transport vacuum chamber comprising a top, side walls, and a bottom that isAtty. Docket No. 390P017238-WO (PCT) / Br3242 substantially level inside the semiconductor substrate transport vacuum chamber, and being capable of being sealed from an external environment in vacuum; an array of electromagnets, connected to the semiconductor substrate transport vacuum chamber to form a drive plane at a predetermined height relative to the substantially level bottom, the array of electromagnets being arranged so that a series of electromagnets of the array of electromagnets define at least one drive line within the drive plane, and each of the electromagnets being coupled to a power source energizing each electromagnet; a substrate handler, comprising: at least one reaction platen of conductive material, disposed to cooperate with the electromagnets of the array of electromagnets so that excitation of a plurality of the electromagnets generates levitation and propulsion forces against the at least one reaction platen that controllably levitate and propel the substrate handler along the at least one drive line, in a controlled attitude relative to the drive plane, and an end effector for carrying a substrate, the end effector being configured to stably hold the substrate for transport through the semiconductor substrate transport vacuum chamber, by way of movement of a respective reaction platen, according to a semiconductor process plan; and a controller operably coupled to the array of electromagnets and the power source so as to move the reaction platen along the at least one drive line for transporting the substrate according to the semiconductor process plan that describes static positions of the substrate handler and moves of the substrate handler between the static positions; identifying, with the controller, an opportunity cooling period for opportunistic cooling of the substrate handler, from the semiconductor process plan where the substrate handler is in one of the static positions; andAtty. Docket No. 390P017238-WO (PCT) / Br3242 changing, with the controller, operation of the array of electromagnets and power source so as to effect the opportunistic cooling of the substrate handler in the identified opportunity cooling period.

12. The method of claim 11, wherein the controller changes operation of the array of electromagnets and power source so that the reaction platen, levitating in the static position, is set down onto the bottom of the semiconductor substrate transport vacuum chamber, with the reaction platen in contact, at least in part, with a thermal sink region of the bottom so that opportunity cooling is effected at least in part via heat conduction between reaction platen and thermal sink region.

13. The method of claim 11, wherein the controller is configured to determine a duration of the identified opportunity cooling period based on a duty cycle of the substrate handler described by the semiconductor process plan.

14. The semiconductor substrate transport apparatus of claim 13, wherein the duty cycle is based, at least in part, on a transport distance, of the transport of the substrate handler in the semiconductor substrate transport vacuum chamber, and of a dynamic constraint applied to the substrate handler movement in transport.

15. The semiconductor substrate transport apparatus of claim 14, wherein the dynamic constraint is acceleration of the substrate handler.

16. The semiconductor substrate transport apparatus of claim 13, wherein the duty cycle is affected by opportunistic cooling of the substrate handler, and wherein opportunistic cooling of the substrate handler, at least in part via the heat conduction, enables higher duty cycles characterized by longer transport distance compared to another transport distance of a radiantly cooled, levitated substrate handler lacking opportunistic cooling at least in part by heat conduction.Atty. Docket No. 390P017238-WO (PCT) / Br324217. The semiconductor substrate transport apparatus of claim 11, wherein opportunistic cooling of the substrate handler, at least in part via the heat conduction, enables longer length transport vacuum chamber compared to another transport vacuum chamber with a radiantly cooled, levitated substrate handler lacking opportunity cooling at least in part by heat conduction.

18. The semiconductor substrate transport apparatus of claim 11, wherein the duty cycle is based at least in part on levitation duration at the predetermined levitation height, and opportunistic cooling of the substrate handler, at least in part via the heat conduction, enables higher duty cycles characterized by longer duration at the predetermined height, or higher height for a predetermined duration compared to another levitation duration, and height of a radiantly cooled, levitated substrate handler lacking opportunity cooling at least in pail by heat conduction.

19. The semiconductor substrate transport apparatus of claim 11, wherein the change in operation of the array of electromagnets and the power source effects contact between the at least one reaction platen and the bottom, where a contact area between the at least one reaction platen and the bottom comprises at least about 0.2% of the area of the at least one reaction platen.

20. The method of claim 19, wherein the contact area effects a duty cycle of the substrate handler between about 75% and about 90%.

Images