Bonding apparatus and bonding method

Abstract

A bonding apparatus according to one aspect of the present disclosure comprises a first holding unit, a second holding unit, at least three imaging units, a moving mechanism, and a control unit. The first holding unit holds a first substrate. The second holding unit holds a second substrate. The moving mechanism moves the first holding unit or the second holding unit. The control unit executes: a first imaging process for capturing an image of an outer peripheral portion of the first substrate by using the at least three imaging units; and a second imaging process for capturing an image of an outer peripheral portion of the second substrate by using the at least three imaging units. The control unit also executes: a calculation process for calculating a positional deviation amount in the horizontal direction between the first substrate and the second substrate on the basis of the images captured through the first imaging process and the second imaging process; and a horizontal position adjusting process for controlling the moving mechanism to move the first holding unit or the second holding unit in the horizontal direction on the basis of the positional deviation amount obtained through the calculation process.

Description

Bonding device and bonding method

[0001] The present disclosure relates to a bonding apparatus and a bonding method.

[0002] Patent Document 1 discloses a bonding device for bonding substrates together.

[0003] International Publication No. 2018 / 088094

[0004] The present disclosure provides a technique that can adjust the position of a substrate while simplifying the configuration of a bonding device.

[0005] A bonding device according to one aspect of the present disclosure includes a first holding unit, a second holding unit, at least three imaging units, a movement mechanism, and a control unit. The first holding unit holds a first substrate from above. The second holding unit is positioned lower than the first holding unit and holds a second substrate from below to be bonded to the first substrate. The movement mechanism moves the first holding unit or the second holding unit. After the first substrate is held by the first holding unit and the second substrate is held by the second holding unit, the control unit executes a first imaging process in which an outer periphery of the first substrate is imaged using at least three imaging units. The control unit also controls the movement mechanism to move the first holding unit or the second holding unit so that a portion of the outer periphery of the second substrate falls within the field of view of one of the at least three imaging units, and then executes a second imaging process in which a process in which an image of a portion of the outer periphery of the second substrate is imaged using the one imaging unit for each of the at least three imaging units. The control unit also executes a calculation process to calculate the amount of horizontal positional deviation between the first substrate and the second substrate based on at least three images captured by the first imaging process, at least three images captured by the second imaging process, and information related to the movement of the movement mechanism in the second imaging process. The control unit also executes a horizontal position adjustment process to control the movement mechanism to move the first holding unit or the second holding unit in the horizontal direction based on the amount of positional deviation calculated in the calculation process.

[0006] According to the present disclosure, it is possible to adjust the position of a substrate while simplifying the configuration of a bonding device.

[0007] FIG. 1 is a schematic diagram showing the configuration of a bonding system according to an embodiment. FIG. 2 is a schematic diagram showing a state of a first substrate and a second substrate according to an embodiment before bonding. FIG. 3 is a schematic diagram showing an example of how a bonding area expands. FIG. 4 is a schematic diagram showing the configuration of a bonding device according to an embodiment. FIG. 5 is a plan view of a first holding unit according to an embodiment as viewed from above. FIG. 6 is a flowchart showing the procedure of a process executed by the bonding system according to an embodiment. FIG. 7 is a flowchart showing an overview of the procedure of a position adjustment process executed by the bonding system according to an embodiment. FIG. 8 is a schematic diagram showing how the first substrate is imaged by the first imaging process. FIG. 9 is a schematic diagram showing how the second substrate is imaged by the second imaging process. FIG. 10 is a schematic diagram showing how the second substrate is imaged by the second imaging process. FIG. 11 is a schematic diagram showing how the second substrate is imaged by the second imaging process. FIG. 12 is a schematic diagram for explaining a horizontal position adjustment process. FIG. 13 is a schematic diagram for explaining a rotational position adjustment process.

[0008] Hereinafter, a detailed description will be given of a mode for carrying out a joining device according to the present disclosure (hereinafter referred to as an "embodiment") with reference to the drawings. Note that the joining device and joining method according to the present disclosure are not limited to the embodiment. Furthermore, each embodiment can be appropriately combined within a range that does not cause contradictions in the processing content. Furthermore, the same components in each of the following embodiments are given the same reference numerals, and redundant explanations will be omitted.

[0009] Furthermore, in the following embodiments, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not necessarily mean "constant," "orthogonal," "perpendicular," or "parallel" in the strict sense. In other words, the above expressions allow for deviations due to, for example, manufacturing precision, installation precision, etc.

[0010] In the drawings referred to below, for ease of understanding, the X-axis, Y-axis, and Z-axis directions are defined as being orthogonal to each other, and an orthogonal coordinate system is shown in which the positive Z-axis direction is the vertically upward direction. The rotation direction around the vertical axis is also referred to as the θ direction.

[0011] <Configuration of Bonding System> First, the configuration of the bonding system according to the first embodiment will be described with reference to Fig. 1 and Fig. 2. Fig. 1 is a schematic diagram showing the configuration of the bonding system according to the embodiment. Fig. 2 is a schematic diagram showing the state before bonding of the first substrate and the second substrate according to the embodiment.

[0012] The bonding system 1 shown in FIG. 1 forms a laminated substrate T by bonding a first substrate W1 and a second substrate W2 together (see FIG. 2).

[0013] The first substrate W1 and the second substrate W2 are, for example, single-crystal silicon wafers, and have multiple electronic circuits formed on their surfaces. The first substrate W1 and the second substrate W2 have approximately the same diameter. Note that one of the first substrate W1 and the second substrate W2 may be a substrate on which no electronic circuits are formed.

[0014] 2, of the surfaces of the first substrate W1, the surface that is bonded to the second substrate W2 will be referred to as the "bonding surface W1j," and the surface opposite the bonding surface W1j will be referred to as the "non-bonding surface W1n." Furthermore, of the surfaces of the second substrate W2, the surface that is bonded to the first substrate W1 will be referred to as the "bonding surface W2j," and the surface opposite the bonding surface W2j will be referred to as the "non-bonding surface W2n."

[0015] 1, the bonding system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 is disposed on the negative X-axis direction side of the processing station 3 and is integrally connected thereto.

[0016] The loading / unloading station 2 includes a mounting table 10 and a transport area 20. The mounting table 10 includes a plurality of mounting plates 11. Each mounting plate 11 is mounted with cassettes C1 to C4, each of which stores a plurality of substrates (e.g., 25 substrates) in a horizontal position. Cassette C1 can store a plurality of first substrates W1, cassette C2 can store a plurality of second substrates W2, and cassette C3 can store a plurality of superimposed substrates T. Cassette C4 is, for example, a cassette for recovering substrates that have developed defects. Note that the number of cassettes C1 to C4 placed on the mounting plate 11 is not limited to that shown in the figure.

[0017] The transport region 20 is disposed adjacent to the mounting table 10 on the positive side of the X axis. The transport region 20 is provided with a transport path 21 extending in the Y axis direction and a transport device 22 that is movable along the transport path 21. The transport device 22 is movable not only in the Y axis direction but also in the X axis direction and is rotatable around the Z axis. The transport device 22 transports the first substrate W1, the second substrate W2, and the laminated substrate T between the cassettes C1 to C4 placed on the mounting plate 11 and a third processing block G3 of the processing station 3, which will be described later.

[0018] For example, three processing blocks G1, G2, and G3 are provided in the processing station 3. The first processing block G1 is located on the rear side of the processing station 3 (the positive Y-axis side in FIG. 1 ). The second processing block G2 is located on the front side of the processing station 3 (the negative Y-axis side in FIG. 1 ), and the third processing block G3 is located on the load / unload station 2 side of the processing station 3 (the negative X-axis side in FIG. 1 ).

[0019] The first processing block G1 is provided with a surface modification device 30 for modifying the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2. The surface modification device 30 modifies the SiO ２ The bond is cut to form single-bonded SiO, thereby modifying the bonding surfaces W1j and W2j so that they are easily hydrophilized thereafter.

[0020] Specifically, in the surface modification apparatus 30, for example, oxygen gas or nitrogen gas serving as a processing gas is excited to form plasma and ionized in a reduced pressure atmosphere. The oxygen ions or nitrogen ions are then irradiated onto the bonding surfaces W1j, W2j of the first substrate W1 and the second substrate W2, thereby subjecting the bonding surfaces W1j, W2j to plasma processing and modification. Note that the processing gas is not limited to oxygen gas, and may be, for example, nitrogen gas, argon gas, helium gas, or the like.

[0021] The first processing block G1 also includes a surface hydrophilization device 40. The surface hydrophilization device 40 hydrophilizes the bonding surfaces W1j, W2j of the first substrate W1 and the second substrate W2 using, for example, pure water, and cleans the bonding surfaces W1j, W2j. Specifically, the surface hydrophilization device 40 supplies pure water onto the first substrate W1 or the second substrate W2 while rotating the first substrate W1 or the second substrate W2 held by, for example, a spin chuck. As a result, the pure water supplied onto the first substrate W1 or the second substrate W2 spreads over the bonding surfaces W1j, W2j of the first substrate W1 or the second substrate W2, thereby hydrophilizing the bonding surfaces W1j, W2j.

[0022] Here, an example is shown in which the surface modification device 30 and the surface hydrophilization device 40 are arranged side by side, but the surface hydrophilization device 40 may be stacked above or below the surface modification device 30.

[0023] The second processing block G2 is provided with a bonding device 41. The bonding device 41 bonds the hydrophilized first substrate W1 and the second substrate W2 together by intermolecular forces. The specific configuration of the bonding device 41 will be described later.

[0024] A transfer region 60 is formed in an area surrounded by the first processing block G1, the second processing block G2, and the third processing block G3. A transfer device 61 is disposed in the transfer region 60. The transfer device 61 has a transfer arm that is movable, for example, vertically, horizontally, and about a vertical axis. The transfer device 61 moves within the transfer region 60 and transfers the first substrate W1, the second substrate W2, and the laminated substrate T to predetermined devices in the first processing block G1, the second processing block G2, and the third processing block G3 adjacent to the transfer region 60.

[0025] The bonding system 1 also includes a control unit 70. The control unit 70 controls the operation of the bonding system 1. The control unit 70 is, for example, a computer, and includes a control unit and a storage unit (not shown). The control unit includes a microcomputer having a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, etc., and various circuits. The CPU of the microcomputer realizes the control described below by reading and executing a program stored in the ROM. The storage unit is realized, for example, by a semiconductor memory element such as RAM or flash memory, or a storage device such as a hard disk or optical disk.

[0026] The program may be recorded on a computer-readable recording medium and installed from the recording medium into the storage unit of the control unit 70. Examples of computer-readable recording media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

[0027] <Outline of Bonding Process> Next, an outline of the bonding process performed by the bonding device 41 will be described with reference to Fig. 3. Fig. 3 is a schematic diagram showing an example of how the bonding region expands. Note that, although a negative Miller index is usually expressed by adding a "-" (bar) above the number, in this specification it is expressed by adding a negative sign before the number.

[0028] 3, the first substrate W1 and the second substrate W2 are single-crystal silicon wafers having a

[100] crystal orientation perpendicular to the surface. The notch portions N of the first substrate W1 and the second substrate W2 are formed on the outer edges of the

[011] crystal orientation of the first substrate W1 and the second substrate W2. The diameters of the first substrate W1 and the second substrate W2 are, for example, 300 mm.

[0029] The bonding device 41 positions the first substrate W1 and the second substrate W2 facing each other with a gap between them, and then presses down the center of the first substrate W1 to bring it into contact with the center of the second substrate W2. As a result, the centers of the first substrate W1 and the second substrate W2 are bonded together by intermolecular forces, forming a bonding area A in the centers of both substrates W1 and W2, as shown in Fig. 3. A bonding wave is then generated in which the bonding area A expands from the centers of both substrates toward their outer peripheries, bonding the entire surfaces of the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2 together.

[0030] The first substrate W1 and the second substrate W2 have different physical properties, such as Young's modulus and Poisson's ratio, in the 90-degree direction and the 45-degree direction. The 90-degree directions are directions with a 90-degree period (the 0-degree, 90-degree, 180-degree, and 270-degree directions shown in FIG. 3 ) based on the direction from the center of the first substrate W1 toward the [0-11] crystal direction parallel to the surface of the first substrate W1. The 45-degree directions are directions with a 90-degree period (the 45-degree, 135-degree, 225-degree, and 315-degree directions shown in FIG. 3 ) based on the direction from the center of the first substrate W1 toward the

[010] crystal direction parallel to the surface of the first substrate W1.

[0031] Specifically, the Young's modulus of the single crystal silicon wafer is highest in the 90-degree direction and lowest in the 45-degree direction. Furthermore, the Poisson's ratio and shear modulus are highest in the 45-degree direction and lowest in the 90-degree direction. Therefore, a difference in the amount of expansion and contraction occurs in the first substrate W1 between the 90-degree direction and the 45-degree direction. Specifically, the first substrate W1 expands more in the 90-degree direction than in the 45-degree direction, and the difference in the amount of expansion between the 90-degree direction and the 45-degree direction of the first substrate W1 increases toward the outer edge of the first substrate W1.

[0032] In the bonding system 1, the positions of the first substrate W1 and the second substrate W2 are adjusted prior to bonding the first substrate W1 and the second substrate W2. Specifically, as will be described later, adjustment is made to the horizontal positional misalignment between the first substrate W1 and the second substrate W2 and the rotational positional misalignment around the vertical axis.

[0033] A conventional bonding apparatus is provided with an imaging unit that images the first substrate W1 and an imaging unit that images the second substrate W2. This conventional bonding apparatus moves the imaging unit horizontally within a planar area between a holder that holds the first substrate W1 and a holder that holds the second substrate W2 to capture images of the alignment marks formed on the bonding surfaces of the first substrate W1 and the second substrate W2. The conventional bonding apparatus then adjusts the horizontal position and orientation of the holder that holds the first substrate W1 based on the detection results of the captured alignment marks, thereby adjusting the positional misalignment between the first substrate W1 and the second substrate W2.

[0034] However, in conventional bonding apparatuses, a camera with relatively high imaging resolution and imaging sensitivity is used as the imaging unit so that the alignment marks formed on the bonding surfaces of the first substrate W1 and the second substrate W2 can be recognized. Also, in conventional bonding apparatuses, the holding unit that holds the first substrate W1 and the second substrate W2 and the imaging unit are provided independently so that the imaging units can move independently.

[0035] On the other hand, in the bonding apparatus 41 according to the present embodiment, at least three imaging units are provided in the holder that holds the first substrate W1, and the at least three imaging units respectively capture images of the outer peripheries of the first substrate W1 and the second substrate W2. Then, based on the captured images, the misalignment between the first substrate W1 and the second substrate W2 is adjusted. According to the present embodiment, the misalignment between the first substrate W1 and the second substrate W2 can be adjusted by capturing images of the outer peripheries of the substrates, which are relatively easy to recognize. Therefore, compared to conventional bonding apparatuses, the performance requirements for the imaging units, such as imaging resolution and imaging sensitivity, can be relaxed.

[0036] Furthermore, according to this embodiment, the imaging unit can be fixed to the holder that holds the first substrate W1. This makes it possible to adjust the positional misalignment by moving the holder that holds the first substrate W1 or the holder that holds the second substrate W2. Therefore, the configuration of the bonding device 41 can be simplified compared to conventional bonding devices.

[0037] <Configuration of welding device> Next, the configuration of the welding device 41 will be described with reference to Figures 4 and 5. Figure 4 is a schematic diagram showing the configuration of the welding device 41 according to the embodiment. Figure 5 is a plan view of the first holding unit 140 according to the embodiment as seen from above.

[0038] As shown in FIG. 4, the welding device 41 includes a first holding unit 140, a second holding unit 141, a striker 190, and a moving mechanism (not shown).

[0039] The first holding part 140 is a member that holds the first substrate W1 from above. The first holding part 140 has a main body part 170 that has a diameter larger than that of the first substrate W1. A through-hole 176 that passes through the main body part 170 in the vertical direction is formed in the main body part 170. The position of the through-hole 176 corresponds to the center of the first substrate W1 that is held by suction on the first holding part 140. A pressing pin 191 of a striker 190 is inserted into the through-hole 176.

[0040] The main body 170 has a plurality of through holes 177 formed therein that pass through the main body 170 in the vertical direction. The positions of the plurality of through holes 177 correspond to the area in which the outer periphery of the first substrate W1 is located when the first holding unit 140 holds the first substrate W1. The imaging unit 500, which will be described later, is disposed above the through holes 177.

[0041] The first holding unit 140 is supported by a movement mechanism (not shown). The movement mechanism can move the first holding unit 140 in the horizontal direction (here, in the XY plane) and the vertical direction (here, the Z-axis direction) under the control of the control unit 70. The movement mechanism can also rotate the first holding unit 140 around the vertical axis (here, the Z-axis) under the control of the control unit 70.

[0042] The striker 190 is disposed on the upper surface of the main body 170, and includes a pressing pin 191, an actuator 192, and a linear motion mechanism 193. The pressing pin 191 is a cylindrical member that extends vertically, and is supported by the actuator 192.

[0043] The actuator unit 192 generates a constant pressure in a certain direction (vertically downward in this case) using air supplied from, for example, an electropneumatic regulator (not shown). The actuator unit 192 contacts the center of the first substrate W1 using the air supplied from the electropneumatic regulator, and is able to control the pressure load applied to the center of the first substrate W1. Furthermore, the tip of the actuator unit 192 is inserted through the through-hole 176 and can be raised and lowered vertically using the air from the electropneumatic regulator.

[0044] The actuator section 192 is supported by a linear motion mechanism 193. The linear motion mechanism 193 moves the actuator section 192 in the vertical direction by means of a drive section incorporating a motor, for example.

[0045] The striker 190 controls the movement of the actuator part 192 by the linear motion mechanism 193, and controls the pressing load on the first substrate W1 by the pressing pin 191 by the actuator part 192. In this way, the striker 190 presses the center of the first substrate W1 held by suction on the first holding part 140, bringing it into contact with the second substrate W2.

[0046] A plurality of pins 171 that come into contact with the upper surface (non-bonding surface W1n) of the first substrate W1 are provided on the lower surface of the main body 170. The pins 171 have a diameter of, for example, 0.1 mm to 1 mm and a height of several tens of μm to several hundreds of μm. The pins 171 are evenly arranged at intervals of, for example, 1 to 10 mm.

[0047] The first holding unit 140 has a plurality of suction units that suction the first substrate W1 in a portion of the region where the plurality of pins 171 are provided. Specifically, an outer suction unit 301 and an inner suction unit 302 that suction the first substrate W1 by vacuuming are provided on the underside of the main body 170 of the first holding unit 140. The outer suction unit 301 and the inner suction unit 302 have suction regions that are arc-shaped in plan view. The outer suction unit 301 and the inner suction unit 302 have the same height as the pins 171.

[0048] The outer suction section 301 is disposed on the outer periphery of the main body 170. The outer suction section 301 is connected to a suction device (not shown) such as a vacuum pump, and sucks the outer periphery of the first substrate W1 by vacuuming.

[0049] The inner suction portion 302 is disposed closer to the center of the main body 170 than the outer suction portion 301. The inner suction portion 302 is connected to a suction device (not shown) such as a vacuum pump, and sucks the area between the outer periphery and the center of the first substrate W1 by vacuuming.

[0050] In this embodiment, the first holding unit 140 has only two suction units, the outer suction unit 301 and the inner suction unit 302, but this is not limiting, and the first holding unit 140 may have three or more suction units. That is, the first holding unit 140 may further have one or more suction units in addition to the outer suction unit 301 and the inner suction unit 302. Such a suction unit may have an suction region that is arc-shaped in plan view.

[0051] At least three imaging units 500 for imaging the first substrate W1 and the second substrate W2 are provided on the upper surface of the main body 170 (see FIG. 5 ). Specifically, each imaging unit 500 is provided above the outer peripheries of the first substrate W1 and the second substrate W2, i.e., above a through-hole 177 of the main body 170, with its optical axis perpendicular to the first substrate W1 and the second substrate W2. The imaging units 500 may be, for example, visible light cameras.

[0052] In this embodiment, three imaging units 500 are provided circumferentially at 90-degree intervals in a plan view of the first holding unit 140 (see FIG. 5 ). Specifically, when the positive X-axis direction is defined as 0 degrees in a plan view of the first holding unit 140, a first imaging unit 510 is provided at a 180-degree position, a second imaging unit 520 is provided at a 270-degree position, and a third imaging unit 530 is provided at a 360-degree position. Note that in the following description, the first imaging unit 510, the second imaging unit 520, and the third imaging unit 530 may be referred to as imaging units 500 without distinction.

[0053] In this embodiment, an example is described in which three imaging units 500 are arranged circumferentially at 90-degree intervals in a planar view of the first holding unit 140, but the three imaging units 500 may also be arranged circumferentially at 120-degree intervals, for example.

[0054] The imaging unit 500 images the outer periphery of the first substrate W1, which is held by suction on the underside of the main body 170, from above the through hole 177 of the main body 170. The imaging unit 500 also images the outer periphery of the second substrate W2, which is held by a second holding unit 141 (described below), from above the through hole 177 of the main body 170. The diameter of the through hole 177 is formed large enough so as not to obstruct the imaging field of the imaging unit 500.

[0055] Image data captured by the imaging units 500 is output to the control unit 70. At least three imaging units 500 are fixed to the first holding unit 140, and therefore can be moved horizontally and vertically by moving the first holding unit 140. This allows the outer periphery of the second substrate W2 to be imaged by moving a part of the outer periphery of the second substrate W2 into the imaging field of view of the imaging units 500. Details of the imaging procedure by the imaging units 500 will be described later.

[0056] The second holding part 141 has a main body part 200 having a diameter that is approximately the same as or larger than that of the second substrate W2. Here, the second holding part 141 having a diameter larger than that of the second substrate W2 is shown. The upper surface of the main body part 200 is an opposing surface that faces the lower surface (non-bonding surface W2n) of the second substrate W2.

[0057] A plurality of pins 201 that come into contact with the lower surface (non-bonding surface W2n) of the second substrate W2 are provided on the upper surface of the main body 200. The pins 201 have a diameter of, for example, 0.1 mm to 1 mm and a height of several tens of μm to several hundreds of μm. The pins 201 are evenly arranged at intervals of, for example, 1 to 10 mm.

[0058] Furthermore, on the upper surface of the main body 200, a peripheral rib 202 is provided circumferentially around the outside of the plurality of pins 201. The peripheral rib 202 is an annular member.

[0059] Furthermore, a central rib 203 is provided circumferentially on the upper surface of the main body 200, more inward than the peripheral rib 202. The central rib 203 is an annular member that is arranged concentrically with the peripheral rib 202.

[0060] On the top surface of the main body 200, the area inside the peripheral rib 202 is divided by the peripheral rib 202 and the central rib 203. That is, the area inside the peripheral rib 202 is divided into an area R1 inside the central rib 203 (hereinafter referred to as the "first suction area") and an area R2 between the central rib 203 and the peripheral rib 202 (hereinafter referred to as the "second suction area").

[0061] The main body 200 has a suction port 204. The suction port 204 is provided in the first suction region R1. The suction port 204 is connected to a suction device 205 via a suction pipe 204a. The suction device 205 is, for example, a vacuum pump.

[0062] The second holding unit 141 suctions the suction regions R1 and R2 via the suction ports 204, thereby reducing the pressure in the suction regions R1 and R2. At this time, because the atmosphere outside the suction regions R1 and R2 is at atmospheric pressure, the second substrate W2 is pushed toward the suction regions R1 and R2 by the atmospheric pressure due to the reduced pressure. As a result, the second substrate W2 is suction-held by the second holding unit 141. The height of the central rib 203 is set lower than the height of the peripheral rib 202. This creates a gap between the central rib 203 and the second substrate W2, allowing the pressure in the suction regions R1 and R2 to be reduced by suction via the suction ports 204.

[0063] Although the present embodiment shows an example in which the suction regions R1 and R2 are evacuated using one suction port 204, the suction regions R1 and R2 may be evacuated individually. That is, the second holding unit 141 may be configured to have a plurality of suction ports provided corresponding to the respective suction regions.

[0064] Although not shown here, the bonding device 41 includes a transition, an inversion mechanism, a position adjustment mechanism, and the like, upstream of the first holding unit 140 and the second holding unit 141 shown in Fig. 4. The transition temporarily places the first substrate W1, the second substrate W2, and the overlapped substrate T. The position adjustment mechanism adjusts the horizontal orientations of the first substrate W1 and the second substrate W2. The inversion mechanism inverts the first substrate W1.

[0065] <Specific Operation of Bonding System> Next, specific operation of the bonding system 1 will be described with reference to Fig. 6. Fig. 6 is a flowchart showing the procedure of processing executed by the bonding system 1 according to this embodiment. The various processes shown in Fig. 6 are executed based on control by the control unit 70.

[0066] First, a cassette C1 containing a plurality of first substrates W1, a cassette C2 containing a plurality of second substrates W2, and an empty cassette C3 are placed on a predetermined loading plate 11 in the load / unload station 2. Then, the first substrates W1 in the cassette C1 are removed by the transport device 22 and transported to a transition device arranged in the third processing block G3.

[0067] Next, the first substrate W1 is transported by the transport device 61 to the surface modification device 30 in the first processing block G1. In the surface modification device 30, oxygen gas, which is a processing gas, is excited to plasma and ionized in a predetermined reduced-pressure atmosphere. The oxygen ions are irradiated onto the bonding surface of the first substrate W1, and the bonding surface is plasma-processed. This modifies the bonding surface of the first substrate W1 (step S101). Note that the processing gas is not limited to oxygen gas, and may be, for example, nitrogen gas, argon gas, helium gas, or the like.

[0068] Next, the first substrate W1 is transported by the transport device 61 to the surface hydrophilization device 40 in the second processing block G1. In the surface hydrophilization device 40, pure water is supplied onto the first substrate W1 while the first substrate W1 held by the spin chuck is being rotated. This makes the bonding surface of the first substrate W1 hydrophilic. The bonding surface of the first substrate W1 is also cleaned with the pure water (step S102).

[0069] Next, the first substrate W1 is transported to the bonding device 41 in the second processing block G2 by the transport device 61. After being loaded into the bonding device 41, the first substrate W1 is transported via a transition to the position adjustment mechanism, where its horizontal orientation is adjusted by the position adjustment mechanism (step S103).

[0070] Thereafter, the first substrate W1 is transferred from the position adjustment mechanism to the reversing mechanism, which then reverses the first substrate W1 upside down (step S104). Specifically, the bonding surface W1j of the first substrate W1 faces downward.

[0071] Thereafter, the first substrate W1 is transferred from the reversing mechanism to the first holding part 140, and the first substrate W1 is held by suction by the first holding part 140 (step S105).

[0072] The processing of the second substrate W2 overlaps with the processing of steps S101 to S105 for the first substrate W1. First, the transport device 22 removes the second substrate W2 from the cassette C2 and transports it to the transition device arranged in the third processing block G3.

[0073] Next, the second substrate W2 is transported by the transport device 61 to the surface modification device 30, where the bonding surface W2j of the second substrate W2 is modified (step S106). Thereafter, the second substrate W2 is transported by the transport device 61 to the surface hydrophilization device 40, where the bonding surface W2j of the second substrate W2 is hydrophilized and cleaned (step S107).

[0074] Thereafter, the second substrate W2 is transported by the transport device 61 to the bonding device 41. The second substrate W2 that has been carried into the bonding device 41 is transported via the transition to the position adjustment mechanism. The horizontal orientation of the second substrate W2 is then adjusted by the position adjustment mechanism (step S108).

[0075] The second substrate W2 is then transported to the second holding unit 141 and suction-held by the second holding unit 141 with the notch N facing a predetermined direction (step S109). Specifically, the second holding unit 141 activates the suction device 205 to suction the second substrate W2 through the suction port 204 in the suction region R1. Here, the first suction region R1 and the second suction region R2 are partitioned by the peripheral rib 202 and the central rib 203, which are non-contact ribs. Therefore, when suction from the suction port 204 begins, suction is performed in the order of suction regions R1 and R2. The negative pressures in the suction regions R1 and R2 approach atmospheric pressure in this order. As a result, the second substrate W2 is suction-held by the first suction region R1, and then by the second suction region R2.

[0076] Next, the horizontal positions of the first substrate W1 held by the first holding unit 140 and the second substrate W2 held by the second holding unit 141 are adjusted (step S110). In step S110, the imaging unit 500 first images the outer peripheries of the first substrate W1 and the second substrate W2 and outputs the image data to the control unit 70. The control unit 70 then calculates the amount of horizontal misalignment between the first substrate W1 and the second substrate W2 from the output image data. The control unit 70 then controls the movement mechanism to move the first holding unit 140 in the horizontal direction based on the calculated amount of horizontal misalignment, thereby adjusting the horizontal misalignment between the first substrate W1 and the second substrate W2. The procedure for this horizontal position adjustment will be described later with reference to FIGS. 7 to 12.

[0077] Next, the rotational positions of the first substrate W1 held by the first holding unit 140 and the second substrate W2 held by the second holding unit 141 are adjusted (step S111). In step S111, the control unit 70 calculates the amount of misalignment in the rotational direction between the first substrate W1 and the second substrate W2 from the image data output in step S110. Next, the control unit 70 controls the movement mechanism to rotate the first holding unit 140 around the vertical axis based on the calculated amount of misalignment in the rotational direction, thereby adjusting the misalignment in the rotational direction between the first substrate W1 and the second substrate W2. The procedure for adjusting the rotational positions will be described later with reference to FIG. 13 .

[0078] Next, the vertical positions of the first substrate W1 held by the first holding part 140 and the second substrate W2 held by the second holding part 141 are adjusted (step S112). Specifically, the control part 70 controls the above-mentioned movement mechanism to move the first holding part 140 in the vertical direction, thereby bringing the first substrate W1 closer to the second substrate W2.

[0079] Thereafter, the first substrate W1 and the second substrate W2 are bonded together (step S113). Specifically, when the center of the first substrate W1 comes into contact with the center of the second substrate W2 and the centers of the first substrate W1 and the second substrate W2 are pressed together with a predetermined force by the striker 190, bonding begins between the pressed centers of the first substrate W1 and the second substrate W2. That is, because the bonding surface W1j of the first substrate W1 and the bonding surface W2j of the second substrate W2 have been modified in steps S101 and S106, respectively, van der Waals forces (intermolecular forces) are first generated between the bonding surfaces W1j and W2j, and the bonding surfaces W1j and W2j are bonded together. Furthermore, because the bonding surface W1j of the first substrate W1 and the bonding surface W2j of the second substrate W2 have been hydrophilized in steps S102 and S107, respectively, the hydrophilic groups between the bonding surfaces W1j and W2j form hydrogen bonds, firmly bonding the bonding surfaces W1j and W2j. In this manner, a bonding region A (see FIG. 3 ) is formed. Then, a bonding wave is generated between the first substrate W1 and the second substrate W2, expanding the bonding region from the center toward the periphery of the first substrate W1 and the second substrate W2. Then, the bonding surface W1j of the first substrate W1 and the bonding surface W2j of the second substrate W2 abut on their entire surfaces, forming a laminated substrate T.

[0080] Thereafter, the pressure applied by the striker 190 is released, and the suction and holding of the second substrate W2 by the second holding part 141 is released. Thereafter, the laminated substrate T is carried out of the bonding device 41 by the transport device 61. In this way, a series of bonding processes is completed.

[0081] In this embodiment, an example has been shown in which the position adjustments are performed in the order of horizontal position adjustment in step S110, rotational position adjustment in step S111, and vertical position adjustment in step S112, but the order of the position adjustment processes is not limited to this. For example, the horizontal and vertical position adjustments may be performed first, followed by rotational position adjustment. Alternatively, the horizontal and vertical position adjustments may be performed first, followed by rotational position adjustment. Furthermore, the vertical position adjustment may be performed first, followed by horizontal position adjustment.

[0082] <Position Adjustment Procedure> Next, an outline of the procedure for the position adjustment process for the first substrate W1 and the second substrate W2 executed by the bonding system 1 will be described in detail with reference to Fig. 7. Note that the position adjustment process referred to here includes the horizontal position adjustment of step S110 in Fig. 6 and the rotational position adjustment of step S111. Fig. 7 is a flowchart showing an outline of the procedure for the position adjustment process executed by the bonding system 1 according to the embodiment. The various processes shown in Fig. 7 are executed based on control by the control unit 70.

[0083] In the position adjustment process, first, a first imaging process is performed (step S301). In the first imaging process, the bonding device 41 uses the first imaging unit 510, the second imaging unit 520, and the third imaging unit 530 to capture images of the outer periphery of the first substrate W1 held by the first holding unit 140. The image data captured in the first imaging process is output to the control unit 70. Specifically, image data of the outer periphery of the first substrate W1 in a 180-degree direction captured by the first imaging unit 510, image data of the outer periphery of the first substrate W1 in a 270-degree direction captured by the second imaging unit 520, and image data of the outer periphery of the first substrate W1 in a 360-degree direction captured by the third imaging unit 530 are output to the control unit 70.

[0084] As described above, a notch portion N is formed in the outer periphery of the first substrate W1, and any one of the first imaging unit 510, the second imaging unit 520, and the third imaging unit 530 is provided at a position where it can image the notch portion N of the first substrate W1. In other words, one of the three image data captured in the first imaging process is image data that includes the notch portion N of the first substrate W1.

[0085] Next, a second imaging process is performed (step S302). In the second imaging process, the bonding device 41 uses the first imaging unit 510, the second imaging unit 520, and the third imaging unit 530 to capture images of the outer periphery of the second substrate W2 held by the second holding unit 141. In the second imaging process, the control unit 70 controls the movement mechanism so that part of the outer periphery of the second substrate W2 falls within the field of view of one of the first imaging unit 510, the second imaging unit 520, and the third imaging unit 530, moves the first holding unit 140, and then performs a process for each imaging unit to capture an image of part of the outer periphery of the second substrate W2 using the one imaging unit.

[0086] The image data captured in the second imaging process is output to the control unit 70. Specifically, the image data of the outer periphery of the second substrate W2 in the 180-degree direction captured by the first imaging unit 510, the image data of the outer periphery of the second substrate W2 in the 270-degree direction captured by the second imaging unit 520, and the image data of the outer periphery of the second substrate W2 in the 360-degree direction captured by the third imaging unit 530 are output to the control unit 70.

[0087] As described above, a notch portion N is formed on the outer periphery of the second substrate W2, and any one of the first imaging unit 510, the second imaging unit 520, and the third imaging unit 530 is provided at a position where it can image the notch portion N of the second substrate W2. In other words, one of the three image data captured in the second imaging process is image data that includes the notch portion N of the second substrate W2.

[0088] Next, a calculation process is performed (step S303). In the calculation process, the control unit 70 calculates the amount of horizontal positional deviation between the first substrate W1 and the second substrate W2 based on the three sets of image data captured in the first imaging process, the three sets of image data captured in the second imaging process, and information related to the movement of the movement mechanism in the second imaging process.

[0089] Specifically, the control unit 70 analyzes the image data captured in the first and second imaging processes, for example, and acquires the coordinates of the outer periphery points in the 180-degree, 270-degree, and 360-degree directions of the first substrate W1 and the coordinates of the outer periphery points in the 180-degree, 270-degree, and 360-degree directions of the second substrate W2. The control unit 70 then calculates the horizontal positional deviation amount based on the coordinates of the outer periphery points and, for example, information on the movement amount and movement direction of the first holding unit 140 in the second imaging process.

[0090] Next, a horizontal position adjustment process is performed (step S304). In the horizontal position adjustment process, the control unit 70 controls the above-mentioned movement mechanism to move the first holding unit 140 in the horizontal direction, based on the horizontal positional deviation amount calculated in the calculation process. By this horizontal position adjustment process, the horizontal positional deviation amount between the first substrate W1 and the second substrate W2 is adjusted.

[0091] Next, a rotational position adjustment process is performed (step S305). In the rotational position adjustment process, the control unit 70 controls the movement mechanism to move the first holding unit 140 in the rotational direction based on image data including the notch portion N of the first substrate W1 imaged in the first imaging process, image data including the notch portion N of the second substrate W2 imaged in the second imaging process, and the horizontal positional deviation amount calculated in the calculation process. Specifically, the control unit 70 controls the movement mechanism to rotate the first holding unit 140 in the rotational direction based on, for example, the coordinates of the notch portion N of the first substrate W1 and the coordinates of the notch portion N of the second substrate W2 obtained by image analysis, and the horizontal positional deviation amount.

[0092] Furthermore, if the bonding apparatus 41 has four or more imaging units 500, the outer peripheries of the first substrate W1 and the second substrate W2 may be imaged using the four or more imaging units 500. In such a case, image data of the outer peripheries of the first substrate W1 and the second substrate W2 imaged by each imaging unit 500 may be output to the control unit 70, and the processing of steps S303 to S305 described above may be performed using such image data.

[0093] Furthermore, in the first imaging process (and the second imaging process), a process may be performed as appropriate to adjust the focal points of the first imaging unit 510, the second imaging unit 520, and the third imaging unit 530 to the outer periphery of the first substrate W1 (and the second substrate W2) by vertically moving the first holding unit 140. In this way, by adjusting the focal point of the imaging unit 500 to the outer periphery of the first substrate W1 and the second substrate W2 before imaging, analysis defects and the like are less likely to occur in the image analysis by the control unit 70.

[0094] In this embodiment, an example is shown in which the horizontal position adjustment in step S304 is followed by the rotational position adjustment in step S305, but the horizontal position adjustment may be performed after the rotational position adjustment.

[0095] <Example of Specific Operation in Position Adjustment> Next, an example of specific operation in the position adjustment process of the first substrate W1 and the second substrate W2 executed by the bonding system 1 will be described in detail with reference to FIGS. 8 to 13. FIG.

[0096] First, a specific operation of the first imaging process will be described. Fig. 8 is a schematic diagram showing how the first substrate W1 is imaged by the first imaging process. In Fig. 8, the positions of the first substrate W1 and the second substrate W2 correspond to the positions of the first substrate W1 and the second substrate W2 before the position adjustment process is performed. In the following description, the positions of the first substrate W1 and the second substrate W2 before the position adjustment process is performed may be referred to as the initial state.

[0097] As shown in Figure 8, the first substrate W1 held by the first holding unit 140 and the second substrate W2 held by the second holding unit 141 are misaligned in the horizontal direction (XY plane direction) and rotational direction (rotational direction around the Z axis) in a plan view. Below, we will explain an example in which the first substrate W1 is misaligned in the negative X-axis direction and the negative Y-axis direction with respect to the position of the second substrate W2, and the first substrate W1 is misaligned in the clockwise rotational direction with respect to the second substrate W2, as shown in Figure 8. In this embodiment, the first substrate W1 and the second substrate W2 have the same diameter. The rectangular areas in Figure 8 indicate the imaging fields of view of each imaging unit 500.

[0098] 8, in the first imaging process, the first imaging unit 510, the second imaging unit 520, and the third imaging unit 530 each capture an image of the outer periphery of the first substrate W1. The captured image data is output to the control unit 70. The control unit 70 analyzes the image data and calculates coordinates A of the outer periphery points of the first substrate W1 in the 180-degree direction. １ = (A １Ｘ , A １Ｙ ), coordinates A of the outer periphery point of the first substrate W1 in the 270-degree direction ２ = (A ２Ｘ , A ２Ｙ ), coordinates A of the outer periphery points of the first substrate W1 in the 360-degree direction ３ = (A ３Ｘ , A ３Ｙ ) is acquired. Specifically, the above-mentioned outer periphery point corresponds to a point on the outer edge of the first substrate W1. The square points in FIG. 8 indicate such outer periphery points of the first substrate W1.

[0099] The coordinates of each of the outer periphery points may be determined as coordinates in an orthogonal coordinate system defined with the center of the first holding unit 140 in a plan view as the origin. The triangulation points shown in Fig. 8 indicate outer periphery points in the 90-degree, 270-degree, and 360-degree directions on the second substrate W2.

[0100] As described above, one of the three image data captured in the first imaging process includes the notch portion N of the first substrate W1. The control unit 70 calculates the coordinates A of the notch portion N of the first substrate W1 from the image data including the notch portion N. Ｎ = (A ＮＸ , A ＮＹ ) may be acquired. Ｎ is used in the rotational position adjustment process, as will be described later.

[0101] Next, a specific operation in the second imaging process will be described. Figures 9 to 11 are schematic diagrams showing how the second substrate W2 is imaged in the second imaging process.

[0102] As shown in FIG. 9, in the second imaging process, first, under the control of the control unit 70, the first holding unit 140 that holds the first substrate W1 moves a distance δ in the positive X-axis direction from the initial position. １1. As a result, a part of the outer periphery of the second substrate W2 in the 180-degree direction is positioned within the imaging field of the first imaging unit 510. Next, the first imaging unit 510 images the outer periphery of the second substrate W2 in the 180-degree direction. When the imaging is completed, the first holding unit 140 returns to the initial state position. The image data thus captured is output to the control unit 70. The control unit 70 analyzes the image data and calculates the coordinates B of the outer periphery point of the second substrate W2 in the 180-degree direction. １ = (B １Ｘ , B １Ｙ ) to obtain the

[0103] Next, in the second imaging process, as shown in FIG. 10, under the control of the control unit 70, the first holding unit 140 that holds the first substrate W1 moves a distance δ in the positive Y-axis direction from the initial position. ２ As a result, a part of the outer periphery of the second substrate W2 in the 270-degree direction is positioned within the imaging field of the second imaging unit 520. Next, the second imaging unit 520 images the outer periphery of the second substrate W2 in the 270-degree direction. When the imaging is completed, the first holding unit 140 returns to the initial state position. The image data thus captured is output to the control unit 70. The control unit 70 analyzes the image data and calculates the coordinates B of the outer periphery point of the second substrate W2 in the 270-degree direction. ２ = (B ２Ｘ , B ２Ｙ ) to obtain the

[0104] Next, in the second imaging process, as shown in FIG. 11, under the control of the control unit 70, the first holding unit 140 that holds the first substrate W1 moves a distance δ in the negative X-axis direction from the initial position. ３ (Here, δ ３ = 0). As a result, a part of the outer periphery of the second substrate W2 in the 360-degree direction is positioned within the imaging field of the third imaging unit 530. Next, the third imaging unit 530 images the outer periphery of the second substrate W2 in the 360-degree direction. When imaging is complete, the first holding unit 140 returns to its initial position. Each image data piece that has been captured is output to the control unit 70. The control unit 70 analyzes the image data and calculates the coordinates B of the outer periphery points of the second substrate W2 in the 360-degree direction. ３ = (B ３Ｘ , B ３Ｙ ) to obtain the

[0105] As described above, one of the three image data captured in the second imaging process includes the notch portion N of the second substrate W2. The control unit 70 calculates the coordinates B of the notch portion N of the second substrate W2 from the image data including the notch portion N. Ｎ = (B ＮＸ , B ＮＹ ) may be acquired. Ｎ is used in the rotational position adjustment process, as will be described later.

[0106] In the first imaging process, coordinate A １ ~A ３ The outer periphery points of the first substrate W1 corresponding to the positions indicated by the arrows are always located within the imaging field of view of each imaging unit 500. In other words, the first imaging unit 510, the second imaging unit 520, and the third imaging unit 530 are provided at positions where they can capture images of the outer periphery of the first substrate W1 held by the first holding unit 140.

[0107] Next, a specific example of the calculation process will be described. The control unit 70 calculates the movement amount δ of the first holding unit 140 in the second imaging process. １ ~δ ３ and A, which is the coordinate of the outer periphery point of the first substrate W1. １ ~A ３ and B, which is the coordinate of the outer periphery point of the second substrate W2. １ ~B ３ Therefore, Δ １ ~Δ ３ Calculate Δ １ is the coordinate A in the initial state １ Coordinate B for １ is a vector that represents the positional deviation of Δ ２ is the coordinate A in the initial state ２ Coordinate B for ２ is a vector that represents the positional deviation of Δ ３ is the coordinate A in the initial state ３ Coordinate B for ３ is a vector that represents the positional deviation of

[0108] Specifically, the above Δ １ ~Δ ３ Each vector in, for example, Δ １ = [(B １Ｘ +δ １ )-A１Ｘ , 0], Δ ２ = [0, (B ２Ｙ +δ ２ )-A ２Ｙ ], Δ ３ = [(B ３Ｘ -δ ３ )-A ３Ｘ , 0]. １ ~Δ ３ Each vector in the above Δ is a two-dimensional vector in the above orthogonal coordinate system. １ ~Δ ３ The X component of each vector is Δ １Ｘ , Δ ２Ｘ , Δ ３Ｘ , Y components are respectively Δ １Ｙ , Δ ２Ｙ , Δ ３Ｙ It may be described as such.

[0109] Next, the control unit 70 calculates Δ １ ~Δ ３ is a vector P that represents the positional deviation in the X-axis direction of the second substrate W2 relative to the first substrate W1 in the initial state. Ｘ and P is a vector representing the positional deviation of the second substrate W2 relative to the first substrate W1 in the initial state. Ｙ Specifically, P Ｘ is a vector representing the positional deviation in the X-axis direction of the virtual center point of the second substrate W2 relative to the virtual center point of the first substrate W1 in the initial state. Ｘ For example, P Ｘ =[(Δ １Ｘ +Δ ３Ｘ ) / 2,0]. Ｙ is a vector representing the positional deviation in the Y-axis direction of the virtual center point of the second substrate W2 relative to the virtual center point of the first substrate W1 in the initial state. Ｙ For example, P Ｙ = [0, Δ ２Ｙ ]. In addition, the above P Ｘ and P Ｙ is a two-dimensional vector in the above Cartesian coordinate system.

[0110] In addition, P Ｘ Is, P Ｘ=[Δ １Ｘ , 0] or P Ｘ =[Δ ３X , 0], but as mentioned above, P Ｘ = (Δ １Ｘ +Δ ３Ｘ ) / 2, it is possible to adjust the positional deviation in the X-axis direction with higher accuracy.

[0111] Next, the horizontal position adjustment process will be described with reference to Fig. 12. Fig. 12 is a schematic diagram for explaining the horizontal position adjustment process. As shown in Fig. 12, in the horizontal position adjustment process, for example, the first holding unit 140 is moved from the initial position to the P Ｘ +P Ｙ = [(Δ １Ｘ +Δ ３Ｘ ) / 2, Δ ２Ｙ ]. This adjusts the horizontal position of the first substrate W1 so that the virtual center point of the first substrate W1 held by the first holding unit 140 coincides with the center point of the second substrate W2.

[0112] Next, the rotational position adjustment process will be described. Fig. 13 is a schematic diagram for explaining the rotational position adjustment process. The rotational position adjustment process is performed, for example, after the horizontal position adjustment of the first substrate W1 and the second substrate W2 is completed by the horizontal position adjustment process. The following description will be given taking as an example a case where the notch portions N of the first substrate W1 and the second substrate W2 are formed in the 270-degree direction.

[0113] In the rotational position adjustment process, the control unit 70 first calculates the coordinate A of the notch portion N on the first substrate W1. Ｎ and the coordinate B of the notch portion N of the second substrate W2 Ｎ The amount of misalignment S in the X-axis direction between the notch N of the first substrate W1 and the notch N of the second substrate W2 after the horizontal position adjustment process is completed is calculated using the coordinates A Ｎ A is the X component of ＮＸ and coordinate B Ｎ B is the X component of ＮＸ For example, S=|B ＮＸ -A ＮＸ |-|P Ｘ | is calculated as

[0114] Next, the control unit 70 calculates, as the amount of positional deviation in the rotational direction, the angle Δθ of the apex angle of an isosceles triangle as shown in Fig. 13. Specifically, as shown in Fig. 13, the control unit 70 assumes an isosceles triangle in which the length of the hypotenuse is R, the length of the perpendicular line drawn from the vertex having the base angle to the opposing hypotenuse is S, and the angle of the apex angle is Δθ, and calculates Δθ calculated by Sin(Δθ)=S / R as the amount of positional deviation in the rotational direction between the first substrate W1 and the second substrate W2.

[0115] As shown in FIG. 13, in this case, the angle Δθ of the apex angle is, for example, Ｗ It can be seen that this corresponds to the amount of deviation in the rotation angle between the first substrate W1 and the second substrate W2. Note that R is the radius of the first substrate W1 and the second substrate W2. R may be a preset fixed value, for example, R = 150 mm. Next, the control unit 70 rotates the first holding unit 140 by the above-mentioned Δθ around the vertical axis. This adjusts the amount of positional deviation in the rotation direction between the first substrate W1 and the second substrate W2.

[0116] So far, we have described an example of specific operations in the position adjustment process for the first substrate W1 and the second substrate W2 executed by the bonding system 1. In the present embodiment, we have described an example in which the three imaging units 500 are arranged circumferentially at 90-degree intervals in a plan view, but this is not limiting, and the three imaging units 500 may be arranged circumferentially at 120-degree intervals in a plan view. Even in such a case, the position adjustment process can be performed using a procedure similar to the example of the specific operations described above.

[0117] Furthermore, for example, if the bonding device 41 has four or more imaging units 500, position adjustment can be performed using the image data of the outer periphery imaged by each imaging unit 500, the coordinates of the outer periphery points of four or more first substrates W1, and the coordinates of the outer periphery points of four or more second substrates W2, in a procedure similar to the example of the specific operation described above.

[0118] As described above, according to the bonding apparatus 41 of this embodiment, the horizontal and rotational positions of the first substrate W1 and the second substrate W2 can be adjusted by capturing images of only the outer peripheries of the first substrate W1 and the second substrate W2 using the imaging unit 500. As a result, compared to conventional bonding apparatuses, even a camera with low performance, such as low imaging resolution and imaging sensitivity, can be used as the imaging unit 500. Specifically, a relatively inexpensive, small visible light camera or the like can be used as the imaging unit 500. Therefore, the manufacturing cost and size of the bonding apparatus 41 can be reduced.

[0119] Furthermore, according to the bonding apparatus 41 of this embodiment, as described above, the imaging unit 500 can be fixed to the first holding unit 140. Therefore, as described above, the positions of the first substrate W1 and the second substrate W2 can be adjusted without having to independently move the imaging unit as in conventional bonding apparatuses. This simplifies the configuration of the bonding apparatus 41. Note that, according to this embodiment, the imaging unit 500 captures images of only the outer peripheries of the first substrate W1 and the second substrate W2. Therefore, the position of the imaging unit 500 provided on the first holding unit 140 does not interfere with the positions of the outer suction unit 301 and the inner suction unit 302 provided on the first holding unit 140 for suction-holding the first substrate W1. This makes it easy to manufacture the bonding apparatus 41.

[0120] Furthermore, according to the bonding apparatus 41 of this embodiment, the above-mentioned vertical position adjustment (step S112) can be performed in addition to the horizontal and rotational position adjustments by moving only the first holding unit 140. Therefore, according to this embodiment, the control process of the position adjustment by the control unit 70 can be simplified in adjusting the positions of the first substrate W1 and the second substrate W2.

[0121] In this embodiment, an example has been described in which the first holding unit 140 is provided so as to be movable by a movement mechanism, but this is not limiting, and the second holding unit 141 may be provided so as to be movable by a movement mechanism. In such a case, the series of position adjustments in steps S110 to S112 described above can also be performed by moving the second holding unit 141.

[0122] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0123] The present technology may also be configured as follows: (1) A control device including: a first holding unit that holds a first substrate from above; a second holding unit that is disposed below the first holding unit and holds a second substrate that is bonded to the first substrate from below; at least three imaging units that are provided on the first holding unit and that image the first substrate and the second substrate; a movement mechanism that moves the first holding unit or the second holding unit; and a control unit, wherein the control unit performs: a first imaging process of imaging an outer periphery of the first substrate using the at least three imaging units after the first substrate is held by the first holding unit and the second substrate is held by the second holding unit; and a second imaging process of controlling the movement mechanism to move the first holding unit or the second holding unit so that a part of the outer periphery of the second substrate falls within a field of view of one of the at least three imaging units, and then performing a process of imaging a part of the outer periphery of the second substrate using the one imaging unit for each of the at least three imaging units. a bonding device that performs a calculation process of calculating a horizontal positional deviation amount between the first substrate and the second substrate based on at least three images captured by the first imaging process, at least three images captured by the second imaging process, and information related to movement of a movement mechanism in the second imaging process, and a horizontal position adjustment process of controlling the movement mechanism to move the first holding unit or the second holding unit in the horizontal direction based on the positional deviation amount calculated in the calculation process. (2) The bonding device described in (1), wherein the at least three imaging units are provided above outer peripheries of the first substrate and the second substrate so that optical axes of the imaging units are perpendicular to the first substrate and the second substrate. (3) The bonding device described in (1) or (2), wherein the at least three imaging units are provided circumferentially at 90-degree intervals in a plan view of the first holding unit.(4) The bonding device according to any one of (1) to (3), wherein one of the at least three imaging units is provided at a position where it can capture images of the notches formed in the first substrate and the second substrate, the movement mechanism is capable of rotating the first holding unit or the second holding unit about a vertical axis, and the control unit further performs a rotational position adjustment process to rotate the first holding unit or the second holding unit about the vertical axis based on an image including the notch of the first substrate captured by the first imaging process, an image including the notch of the second substrate captured by the second imaging process, and the horizontal positional deviation calculated by the calculation process. (5) The bonding device according to (4), wherein the movement mechanism moves the first holding unit or the second holding unit in a horizontal direction and rotates it about the vertical axis. (6) The bonding device according to (4), wherein the movement mechanism moves the first holding unit in a horizontal direction and rotates it about the vertical axis.(7) A bonding method for a bonding device having a first holding section that holds a first substrate from above, a second holding section that is arranged below the first holding section and holds a second substrate to be bonded to the first substrate from below, at least three image capturing sections that are provided on the first holding section and capture images of the first substrate and the second substrate, and a movement mechanism that moves the first holding section or the second holding section, the method comprising: a first step of capturing images of an outer periphery of the first substrate using the at least three image capturing sections after the first substrate is held by the first holding section and the second substrate is held by the second holding section; and a second step of controlling the movement mechanism to move the first holding section or the second holding section so that a portion of the outer periphery of the second substrate falls within a field of view of one of the at least three image capturing sections, and then performing a process of capturing an image of a portion of the outer periphery of the second substrate using the one image capturing section for each of the at least three image capturing sections. a third step of calculating a horizontal positional deviation amount between the first substrate and the second substrate based on at least three images taken in the first step, at least three images taken in the second step, and information related to the movement of a movement mechanism in the second step; and a fourth step of controlling the movement mechanism to move the first holding unit or the second holding unit in the horizontal direction based on the positional deviation amount calculated in the third step, thereby adjusting the horizontal positions of the first substrate and the second substrate.

[0124] REFERENCE SIGNS LIST 1 Bonding system 41 Bonding device 70 Control unit 140 First holding unit 141 Second holding unit 176, 177 Through hole 190 Striker 301 Outer suction unit 302 Inner suction unit 500 Imaging unit 510 First imaging unit 520 Second imaging unit 530 Third imaging unit N Notch unit W1 First substrate W2 Second substrate T Laminated substrate

Claims

1. A system comprising: a first holding section that holds a first substrate from above; a second holding section that is positioned below the first holding section and holds a second substrate that is to be bonded to the first substrate from below; at least three imaging sections that are provided on the first holding section and that capture images of the first substrate and the second substrate; a movement mechanism that moves the first holding section or the second holding section; and a control section, wherein the control section performs: a first imaging process in which, after the first substrate is held by the first holding section and the second substrate is held by the second holding section, an image of an outer periphery of the first substrate is captured using the at least three imaging sections; and a second imaging process in which, after the control section controls the movement mechanism to move the first holding section or the second holding section so that a portion of the outer periphery of the second substrate falls within the field of view of one of the at least three imaging sections, an image of a portion of the outer periphery of the second substrate is captured using the one imaging section for each of the at least three imaging sections. A bonding device that performs a calculation process to calculate the amount of horizontal positional deviation between the first substrate and the second substrate based on at least three images captured by the first imaging process, at least three images captured by the second imaging process, and information regarding the movement of a movement mechanism in the second imaging process; and a horizontal position adjustment process to control the movement mechanism to move the first holding unit or the second holding unit in the horizontal direction based on the amount of positional deviation calculated in the calculation process.

2. The bonding apparatus according to claim 1, wherein the at least three imaging units are provided above the outer periphery of the first substrate and the second substrate, such that the optical axis of each imaging unit is perpendicular to the first substrate and the second substrate.

3. The joining device according to claim 2, wherein the at least three imaging units are arranged circumferentially at 90-degree intervals in a plan view of the first holding unit.

4. A joining device as described in claim 1, wherein one of the at least three imaging units is provided at a position where it can image the notches formed on the first substrate and the second substrate, the moving mechanism is capable of rotating the first holding unit or the second holding unit around a vertical axis, and the control unit further executes a rotational position adjustment process to rotate the first holding unit or the second holding unit around the vertical axis based on an image including the notch of the first substrate imaged by the first imaging process, an image including the notch of the second substrate imaged by the second imaging process, and the horizontal positional deviation amount calculated by the calculation process.

5. The joining device according to claim 4, wherein the moving mechanism moves the first holding part or the second holding part horizontally and rotates it around a vertical axis.

6. The joining device according to claim 4, wherein the moving mechanism moves the first holding portion horizontally and rotates it around a vertical axis.

7. A bonding method for a bonding device having a first holding section that holds a first substrate from above, a second holding section that is positioned below the first holding section and holds a second substrate to be bonded to the first substrate from below, at least three image capturing sections that are provided on the first holding section and capture images of the first substrate and the second substrate, and a movement mechanism that moves the first holding section or the second holding section, comprising: a first step of capturing images of an outer periphery of the first substrate using the at least three image capturing sections after the first substrate is held by the first holding section and the second substrate is held by the second holding section; and a second step of controlling the movement mechanism to move the first holding section or the second holding section so that a portion of the outer periphery of the second substrate falls within the field of view of one of the at least three image capturing sections, and then performing a process of capturing an image of a portion of the outer periphery of the second substrate using the one image capturing section for each of the at least three image capturing sections. a third step of calculating a horizontal positional deviation amount between the first substrate and the second substrate based on at least three images taken in the first step, at least three images taken in the second step, and information related to the movement of a movement mechanism in the second step; and a fourth step of controlling the movement mechanism to move the first holding unit or the second holding unit in the horizontal direction based on the positional deviation amount calculated in the third step, thereby adjusting the horizontal positions of the first substrate and the second substrate.

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