Semiconductor module

Abstract

A semiconductor module comprises: a heat dissipation member that has a support surface oriented toward one side in a first direction; a base material that faces the support surface; a first semiconductor element that is positioned on the opposite side from the heat dissipation member with respect to the base material and is mounted on the base material; a first electric power terminal that is electrically connected to the first semiconductor element; an encapsulating resin that covers the first semiconductor element; and a bonding material that bonds the support surface and the base material. The bonding material is an insulator. The thermal conductivity of the bonding material is higher than the thermal conductivity of the encapsulating resin. The first electric power terminal has a first outer portion that is positioned further outward than the encapsulating resin when viewed in the first direction. When viewed in the first direction, the first outer portion overlaps each of the heat dissipation member and the bonding material.

Description

Semiconductor Module

[0001] The present disclosure relates to a semiconductor module.

[0002] Patent Document 1 discloses an example of a semiconductor module equipped with a cooler and a semiconductor device. The cooler equipped in the semiconductor module includes a housing having a hollow region and a heat sink. The housing has an opening that leads to the hollow region. The heat sink is attached to the housing so as to close the opening. The semiconductor device is joined to a portion of the heat sink that protrudes from the hollow region. When the hollow region is filled with a liquid refrigerant, the refrigerant comes into contact with the heat sink. This allows the semiconductor device to be cooled.

[0003] In the heat sink of the semiconductor module disclosed in Patent Document 1, the portion that protrudes from the hollow region is close to the semiconductor device. This may cause leakage current from the exposed terminals of the semiconductor device toward the protruding portion. In other words, there is a concern that the dielectric strength of the semiconductor device may decrease.

[0004] International Publication No. 2017 / 094370

[0005] [Summary] An object of the present disclosure is to provide an improved semiconductor module compared to conventional semiconductor modules. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor module that can suppress a decrease in dielectric strength voltage while improving heat dissipation.

[0006] A semiconductor module provided by one aspect of the present disclosure includes a heat dissipation member having a support surface facing one side in a first direction, a base material facing the support surface, a first semiconductor element located on the opposite side of the base material from the heat dissipation member and mounted on the base material, a first power terminal electrically connected to the first semiconductor element, a sealing resin covering the first semiconductor element, and a bonding material that is an insulator and bonds the support surface to the base material. The thermal conductivity of the bonding material is higher than the thermal conductivity of the sealing resin. The first power terminal has a first outer portion located outward from the sealing resin when viewed in the first direction. When viewed in the first direction, the first outer portion overlaps both the heat dissipation member and the bonding material.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0008] FIG. 1 is a plan view of a semiconductor module according to a first embodiment of the present disclosure. FIG. 2 is a cross-sectional view taken along line II-II in FIG. 1. FIG. 3 is a cross-sectional view taken along line III-III in FIG. 1. FIG. 4 is a partially enlarged view of FIG. 2. FIG. 5 is a plan view of a semiconductor device included in the semiconductor module shown in FIG. 1. FIG. 6 is a plan view corresponding to FIG. 5, seen through the sealing resin. FIG. 7 is a bottom view of the semiconductor device shown in FIG. 5. FIG. 8 is a right side view of the semiconductor device shown in FIG. 5. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 6. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 6. FIG. 11 is a partially enlarged view of FIG. 9, showing a first semiconductor element and its vicinity. FIG. 12 is a partially enlarged view of FIG. 9, showing a second semiconductor element and its vicinity. FIG. 13 is a plan view of a semiconductor module according to a second embodiment of the present disclosure. FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 13. FIG. 13 is a partially enlarged cross-sectional view of a semiconductor module according to a third embodiment of the present disclosure. FIG. 16 is a plan view of a semiconductor module according to a fourth embodiment of the present disclosure. FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. 16. FIG. 18 is a plan view of a semiconductor module according to a fifth embodiment of the present disclosure. FIG. 19 is a cross-sectional view taken along line XIX-XIX in FIG. 18. FIG. 20 is a cross-sectional view taken along line XX-XX in FIG. 18. FIG. 21 is a plan view of a semiconductor module according to a sixth embodiment of the present disclosure. FIG. 22 is a cross-sectional view taken along line XXII-XXII in FIG. 21. FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 21. FIG. 24 is a plan view of a semiconductor device included in the semiconductor module shown in FIG. 21. FIG. 25 is a plan view corresponding to FIG. 24, seen through the sealing resin. FIG. 26 is a partially enlarged view of FIG. 25. Fig. 27 is a plan view corresponding to Fig. 24, with the sealing resin and second conductive member omitted. Fig. 28 is a bottom view of the semiconductor device shown in Fig. 24. Fig. 29 is a right side view of the semiconductor device shown in Fig. 24. Fig. 30 is a left side view of the semiconductor device shown in Fig. 24. Fig. 31 is a cross-sectional view taken along line XXXI-XXXI in Fig. 25. Fig. 32 is a partial enlarged view of the first semiconductor element and its periphery shown in Fig. 31. Fig. 33 is a partial enlarged view of the second semiconductor element and its periphery shown in Fig. 31.Fig. 34 is a cross-sectional view taken along line XXXIV-XXXIV in Fig. 25. Fig. 35 is a cross-sectional view taken along line XXXV-XXXV in Fig. 25.

[0009] DETAILED DESCRIPTION The present disclosure will be described in detail with reference to the accompanying drawings.

[0010] First Embodiment: A semiconductor module A10 according to a first embodiment of the present disclosure will be described with reference to Figures 1 to 12. The semiconductor module A10 includes a semiconductor device B10, a bonding material 70, and a heat dissipation member 80.

[0011] In the description of the semiconductor module A10, for convenience, the normal direction of a support surface 801 of a heat dissipation member 80 (described later) will be referred to as the "first direction z." Furthermore, for example, the direction perpendicular to the first direction z will be referred to as the "second direction x." Furthermore, for example, the direction perpendicular to the first direction z and the second direction x will be referred to as the "third direction y."

[0012] First, a semiconductor device B10 included in the semiconductor module A10 will be described with reference to FIGS. 5 to 12. The semiconductor device B10 is used in a power conversion circuit such as an inverter. The semiconductor device B10 includes a substrate 11, two first semiconductor elements 21, a first power terminal 12, a second power terminal 13, a first signal terminal 161, a third signal terminal 171, a first conductive member 33, a second conductive member 34, a third conductive member 35, and a sealing resin 50. For ease of understanding, FIG. 6 shows the sealing resin 50 in a perspective view. In FIG. 6, the transparent sealing resin 50 is indicated by an imaginary line (two-dot chain line).

[0013] 9, the sealing resin 50 covers the two first semiconductor elements 21. The sealing resin 50 is an insulator and is made of a material containing, for example, black epoxy resin.

[0014] 8, sealing resin 50 has a top surface 51, a bottom surface 52, a first side surface 53, a second side surface 54, and a protrusion 55. As shown in Figures 9 and 10, top surface 51 faces one side in first direction z. Bottom surface 52 faces the opposite side to top surface 51 in first direction z.

[0015] 5, 7, and 8, the first side surface 53 and the second side surface 54 face opposite each other in the second direction x. The first side surface 53 and the second side surface 54 are connected to the top surface 51 and the bottom surface 52, respectively. As shown in FIGS. 8 to 10, the protrusion 55 protrudes from the bottom surface 52 in the first direction z.

[0016] As shown in FIGS. 9 and 10 , the base material 11 is located on one side of the two first semiconductor elements 21 in the first direction z. In the semiconductor device B10, the base material 11 is made of a substrate formed by, for example, active metal brazing (AMB). As shown in FIG. 10 , the base material 11 includes an insulating layer 111, a first conductive layer 112, a heat dissipation layer 114, and a relay layer 115. The base material 11 is covered with a sealing resin 50 except for a heat dissipation surface 114A of the heat dissipation layer 114, which will be described later.

[0017] The insulating layer 111 is made of a material with a relatively high thermal conductivity, such as a ceramic material containing either silicon nitride (Si3N4) or aluminum nitride (AlN).

[0018] 9 and 10 , the first conductive layer 112 is located between the insulating layer 111 and the two first semiconductor elements 21 in the first direction z. The first conductive layer 112 is bonded to the insulating layer 111. As viewed in the first direction z, the first conductive layer 112 is located inward from the periphery 111A of the insulating layer 111. The first conductive layer 112 is covered with a sealing resin 50. The first conductive layer 112 contains copper (Cu). The dimension of the first conductive layer 112 in the first direction z is larger than the dimension of the insulating layer 111 in the first direction z.

[0019] 6 and 9 , the first conductive layer 112 has a first mounting surface 112A. The first mounting surface 112A faces the same side as the top surface 51 of the sealing resin 50 in the first direction z. The first mounting surface 112A faces each of the two first semiconductor elements 21.

[0020] 9 and 10 , the heat dissipation layer 114 is located on the opposite side of the insulating layer 111 from the first conductive layer 112. The heat dissipation layer 114 is bonded to the insulating layer 111. When viewed in the first direction z, the heat dissipation layer 114 is located inward from the periphery 111A of the insulating layer 111. The heat dissipation layer 114 contains copper. The dimension of the heat dissipation layer 114 in the first direction z is larger than the dimension of the insulating layer 111 in the first direction z.

[0021] As shown in Figures 6 and 10, the relay layer 115 is located on the same side as the first conductive layer 112 with respect to the insulating layer 111. The relay layer 115 is bonded to the insulating layer 111. The relay layer 115 is located next to the first conductive layer 112 in the second direction x. The relay layer 115 extends in the third direction y. When viewed in the first direction z, the relay layer 115 is located inward from the periphery 111A of the insulating layer 111. The relay layer 115 is covered with a sealing resin 50. The relay layer 115 contains copper.

[0022] As shown in FIGS. 9 and 10 , the two first semiconductor elements 21 are mounted on the first mounting surface 112A of the first conductive layer 112. The two first semiconductor elements 21 are, for example, metal-oxide-semiconductor field-effect transistors (MOSFETs). Alternatively, the two first semiconductor elements 21 may be field-effect transistors including metal-insulator-semiconductor field-effect transistors (MISFETs) or bipolar transistors such as insulated gate bipolar transistors (IGBTs). Furthermore, the two first semiconductor elements 21 may be various diodes including Schottky barrier diodes. In the description of the semiconductor device B10, the two first semiconductor elements 21 are n-channel MOSFETs with a vertical structure. The two first semiconductor elements 21 include a compound semiconductor substrate. The compound semiconductor substrate contains silicon carbide (SiC).

[0023] 6 and 9, the two first semiconductor elements 21 include a first element 21A and a second element 21B. The first element 21A and the second element 21B are spaced apart from each other in the third direction y. As shown in FIGS. 11 and 12, each of the first element 21A and the second element 21B includes a first electrode 211, two second electrodes 212, and a first gate electrode 213.

[0024] As shown in FIGS. 11 and 12 , the first electrode 211 is located on one side in the first direction z. The first electrode 211 faces the first mounting surface 112A of the first conductive layer 112. The first electrode 211 is conductively bonded to the first mounting surface 112A via a conductive bonding layer 29. This provides electrical continuity between the first electrode 211 and the first conductive layer 112. The conductive bonding layer 29 is, for example, solder. Alternatively, the conductive bonding layer 29 may be a sintered metal containing silver (Ag). In each of the first element 21A and the second element 21B, a current flows from the first electrode 211 toward the interior of the element. Therefore, the first electrode 211 corresponds to the drain of each of the first element 21A and the second element 21B.

[0025] 11 and 12 , the two second electrodes 212 are located on the opposite side of the first electrode 211 in the first direction z. As shown in Fig. 6 , the two second electrodes 212 are spaced apart from each other in the second direction x. In each of the first element 21A and the second element 21B, a current flows from the inside of the element toward the two second electrodes 212. Therefore, the two second electrodes 212 correspond to the sources of the first element 21A and the second element 21B.

[0026] 6 , 11 , and 12 , the first gate electrode 213 is located on the same side as the two second electrodes 212 in the first direction z. A gate voltage for driving either the first element 21A or the second element 21B is applied to the first gate electrode 213. The first gate electrode 213 is electrically connected to the relay layer 115. As shown in FIG. 6 , the area of ​​the first gate electrode 213 is smaller than the area of ​​each of the two second electrodes 212 when viewed in the first direction z.

[0027] 6 , the first power terminal 12 is located on one side of the two first semiconductor elements 21 in the second direction x. The first power terminal 12 is electrically connected to the first electrodes 211 of the two first semiconductor elements 21. Therefore, the first power terminal 12 corresponds to the drain terminal of the semiconductor device B10. The first power terminal 12 contains copper.

[0028] 6 and 10 , the first power terminal 12 has a first inner part 121 and a first outer part 122. The first inner part 121 is covered with a sealing resin 50. The first inner part 121 is conductively joined to the first mounting surface 112A of the first conductive layer 112 via a conductive joining layer 29. Alternatively, the first inner part 121 may be conductively joined to the first conductive layer 112 by welding.

[0029] 6 and 10 , the first outer part 122 is connected to the first inner part 121. As shown in Fig. 5 , when viewed in the first direction z, the first outer part 122 is located outward from the sealing resin 50. The first outer part 122 protrudes from the first side surface 53 of the sealing resin 50.

[0030] 6 and 9 , the second power terminal 13 is conductively bonded to the two second electrodes 212 of each of the two first semiconductor elements 21. This allows the second power terminal 13 to be electrically connected to the two second electrodes 212 of each of the two first semiconductor elements 21. Therefore, the second power terminal 13 corresponds to the source terminal of the semiconductor device B10. The second power terminal 13 contains copper.

[0031] 6 and 10 , the second power terminal 13 has a second inner part 131 and a second outer part 132. The second inner part 131 is covered with the sealing resin 50 and is separated from the substrate 11. The second inner part 131 is conductively bonded to the two second electrodes 212 of the first element 21A via a conductive bonding layer 29. In addition, the second inner part 131 is conductively bonded to the two second electrodes 212 of the second element 21B via the conductive bonding layer 29.

[0032] 6 and 10 , the second outer part 132 is connected to the second inner part 131. As shown in Fig. 5 , the second outer part 132 is located outward from the sealing resin 50 when viewed in the first direction z. The second outer part 132 is located on the opposite side of the sealing resin 50 in the second direction x from the first outer part 122 of the first power terminal 12. The second outer part 132 protrudes from the second side surface 54 of the sealing resin 50.

[0033] 5 and 6 , the first signal terminal 161 is located on one side of the second power terminal 13 in the second direction x. The first signal terminal 161 is electrically connected to the relay layer 115. Therefore, the first signal terminal 161 is electrically connected to the first gate electrodes 213 of the two first semiconductor elements 21. Therefore, the first signal terminal 161 corresponds to the gate terminal of the semiconductor device B10. The first signal terminal 161 contains copper.

[0034] As shown in Figures 5 and 6, the first signal terminal 161 has an inner part 161A and an outer part 161B. The inner part 161A is covered with the sealing resin 50 and is separated from the base material 11. The outer part 161B is connected to the inner part 161A. As viewed in the first direction z, the outer part 161B is located outward from the sealing resin 50. The outer part 161B is located on the same side as the second outer part 132 of the second power terminal 13 with respect to the sealing resin 50 in the second direction x. The outer part 161B protrudes from the second side surface 54 of the sealing resin 50. As shown in Figure 8, the outer part 161B includes a portion extending along the first direction z.

[0035] As shown in FIG. 5 , the third signal terminal 171 includes a portion covered with the sealing resin 50 and a portion protruding from the second side surface 54 of the sealing resin 50. The third signal terminal 171 is located between the second power terminal 13 and the first signal terminal 161 in the third direction y. The third signal terminal 171 is connected to the second inner portion 131 of the second power terminal 13. This establishes electrical continuity between the third signal terminal 171 and the two second electrodes 212 of each of the two first semiconductor elements 21. A voltage having the same potential as the voltage applied to each of the two second electrodes 212 is applied to the third signal terminal 171. The third signal terminal 171 includes copper. Similar to the outer portion 161B of the first signal terminal 161, the portion of the third signal terminal 171 protruding from the second side surface 54 includes a portion extending along the first direction z.

[0036] 6, the first conductive member 33 is conductively bonded to the first gate electrode 213 of the first element 21A and the relay layer 115. This allows the relay layer 115 to be electrically connected to the first gate electrode 213 of the first element 21A. The first conductive member 33 is covered with a sealing resin 50. The first conductive member 33 is, for example, a wire containing either aluminum (Al) or gold (Au).

[0037] 6, the second conductive member 34 is conductively bonded to the first gate electrode 213 of the second element 21B and the relay layer 115. This provides electrical continuity between the relay layer 115 and the first gate electrode 213 of the second element 21B. The second conductive member 34 is covered with a sealing resin 50. The second conductive member 34 is, for example, a wire containing either aluminum or gold.

[0038] 6 , the third conductive member 35 is conductively bonded to the relay layer 115 and the inner portion 161A of the first signal terminal 161. This allows the relay layer 115 to be electrically connected to the first signal terminal 161. The third conductive member 35 is covered with a sealing resin 50. The third conductive member 35 is, for example, a wire containing either aluminum or gold. The third conductive member 35 is connected to the second conductive member 34.

[0039] Next, the overall configuration of the semiconductor module A10 will be described with reference to FIGS.

[0040] The heat dissipation member 80 is used to cool the semiconductor device B10. The heat dissipation member 80 contains metal. For example, the heat dissipation member 80 is made of a material containing aluminum.

[0041] As shown in FIGS. 2 and 3 , the heat dissipation member 80 has a support portion 81 and a heat dissipation portion 82. In the semiconductor module A10, the support portion 81 is flat. The support portion 81 has a support surface 801 facing one side in the first direction z. The heat dissipation surface 114A of the heat dissipation layer 114 (substrate 11) of the semiconductor device B10 and the bottom surface 52 of the sealing resin 50 of the semiconductor device B10 each face the support surface 801. The heat dissipation portion 82 is located on the opposite side of the substrate 11 of the semiconductor device B10 with respect to the support portion 81. The heat dissipation portion 82 is connected to the support portion 81. The dimension of the heat dissipation portion 82 in the first direction z is larger than the dimension of the support portion 81 in the first direction z.

[0042] 2 and 3 , in the semiconductor module A10, the heat dissipation portion 82 is a plurality of fins. The plurality of fins are arranged along the second direction x. Each of the plurality of fins extends in the third direction y. Alternatively, the heat dissipation portion 82 may be a plurality of pins or the like.

[0043] 1 and 2 , the support surface 801 includes a first edge 801A and a second edge 801B. The first edge 801A is located on the opposite side of the sealing resin 50 of the semiconductor device B10 from the first outer part 122 of the first power terminal 12 of the semiconductor device B10 in the second direction x. The second edge 801B is located on the opposite side of the sealing resin 50 from the second outer part 132 of the second power terminal 13 of the semiconductor device B10 in the second direction x. Each of the first edge 801A and the second edge 801B extends in the third direction y.

[0044] 2 , the support portion 81 has a first end surface 802 and a second end surface 803. The first end surface 802 faces one side in the second direction x and is connected to a first edge 801A of the support surface 801. The second end surface 803 faces the opposite side from the first end surface 802 in the second direction x and is connected to a second edge 801B of the support surface 801.

[0045] As shown in FIGS. 2 and 3 , the bonding material 70 bonds the support surface 801 of the heat dissipation member 80 to the heat dissipation layer 114 of the semiconductor device B10. The bonding material 70 covers the entire heat dissipation surface 114A of the heat dissipation layer 114. The bonding material 70 is an insulator. The bonding material 70 is, for example, a thermal interface material (TIM) containing resin. The thermal conductivity of the bonding material 70 is higher than that of the sealing resin 50 of the semiconductor device B10. The thermal conductivity of the heat dissipation member 80 is higher than that of the bonding material 70. As shown in FIGS. 1 and 2 , the bonding material 70 contacts each of a first edge 801A and a second edge 801B of the support surface 801.

[0046] 2 and 3, the bonding material 70 covers the bottom surface 52 and the protrusion 55 of the sealing resin 50 of the semiconductor device B10. As shown in FIGS. 2 and 4, the bonding material 70 includes a first portion 701 and a second portion 702. The first portion 701 is sandwiched between the support surface 801 of the heat dissipation member 80 and the heat dissipation surface 114A of the heat dissipation layer 114 of the semiconductor device B10. The second portion 702 is connected to the first portion 701 and is sandwiched between the support surface 801 and the bottom surface 52. As shown in FIG. 4, the dimension d1 of the first portion 701 in the first direction z is smaller than the dimension d2 of the second portion 702 in the first direction z.

[0047] 1 and 2 , when viewed in the first direction z, the first outer part 122 of the first power terminal 12 of the semiconductor device B10 overlaps with the support part 81 of the heat dissipation member 80 and the bonding material 70. When viewed in the first direction z, the second outer part 132 of the second power terminal 13 of the semiconductor device B10 overlaps with the support part 81 and the bonding material 70. When viewed in the first direction z, the outer part 161B of the first signal terminal 161 of the semiconductor device B10 overlaps with the support part 81 and the bonding material 70. When viewed in the first direction z, the first outer part 122, the second outer part 132, and the outer part 161B each overlap with the support surface 801 of the heat dissipation member 80.

[0048] Next, the effects of the semiconductor module A10 will be described.

[0049] The semiconductor module A10 includes a heat dissipation member 80, a base material 11, a first semiconductor element 21, a first power terminal 12, a sealing resin 50, and a bonding material 70. The bonding material 70 is an insulator. The thermal conductivity of the bonding material 70 is higher than that of the sealing resin 50. The first power terminal 12 has a first outer part 122 located outward from the sealing resin 50 in the first direction z. The first outer part 122 overlaps both the heat dissipation member 80 and the bonding material 70 in the first direction z. With this configuration, heat generated from the first semiconductor element 21 is conducted to the heat dissipation member 80 via the base material 11 and the bonding material 70. Furthermore, the bonding material 70, which is an insulator, increases the creepage distance from the first outer part 122 to the heat dissipation member 80. Therefore, with this configuration, the semiconductor module A10 can improve heat dissipation while suppressing a decrease in dielectric strength.

[0050] The thermal conductivity of the heat dissipation member 80 is higher than the thermal conductivity of the bonding material 70. By adopting this configuration, the heat conducted from the first semiconductor element 21 to the bonding material 70 via the base material 11 can be conducted to the heat dissipation member 80 more quickly.

[0051] The support surface 801 of the heat dissipation member 80 includes a first edge 801A located on the opposite side of the sealing resin 50 from the first outer part 122 of the first power terminal 12 in the second direction x. The bonding material 70 is in contact with the first edge 801A. With this configuration, the creepage distance from the first outer part 122 to the heat dissipation member 80 is further increased by the bonding material 70. This effectively prevents a decrease in the dielectric strength voltage of the semiconductor module A10.

[0052] The sealing resin 50 has a protrusion 55 protruding from the bottom surface 52. The base material 11 includes a heat dissipation layer 114 having a heat dissipation surface 114A. The heat dissipation surface 114A is exposed from the protrusion 55. The bonding material 70 covers the protrusion 55. With this configuration, the sealing resin 50 exhibits an anchor effect with respect to the bonding material 70. This can improve the bonding strength of the sealing resin 50 to the bonding material 70.

[0053] The bonding material 70 includes a first portion 701 sandwiched between a support surface 801 of the heat dissipation member 80 and the heat dissipation surface 114A of the heat dissipation layer 114, and a second portion 702 sandwiched between the support surface 801 and the bottom surface 52 of the sealing resin 50. A dimension d1 in the first direction z of the first portion 701 is smaller than a dimension d2 in the first direction z of the second portion 702. This configuration can improve both the bonding strength of the sealing resin 50 to the bonding material 70 and the heat dissipation properties.

[0054] Second Embodiment: A semiconductor module A20 according to a second embodiment of the present disclosure will be described with reference to Figures 13 and 14. In this figure, elements that are the same as or similar to those in the semiconductor module A10 and semiconductor device B10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted.

[0055] In the semiconductor module A20, the configuration of the bonding material 70 is different from that of the semiconductor module A10.

[0056] 13 and 14 , the bonding material 70 has a main portion 71, a first end portion 72, and a second end portion 73. The main portion 71 covers at least a portion of the support surface 801 of the heat dissipation member 80. The first portion 701 and the second portion 702 of the bonding material 70 are included in the main portion 71.

[0057] 13 and 14 , the first end 72 is located on one side in the second direction x of the main portion 71. The first end 72 overlaps with a first end surface 802 of the heat dissipation member 80 as viewed in the second direction x, and covers at least a portion of the first end surface 802. As shown in Fig. 14 , in a cross section having the first direction z and the second direction x as in-plane directions, the first end 72 is convex in the second direction x.

[0058] 13 and 14 , the second end 73 is located on the opposite side of the first end 72 from the main portion 71 in the second direction x. The second end 73 overlaps with a second end surface 803 of the heat dissipation member 80 as viewed in the second direction x, and covers at least a portion of the second end surface 803. As shown in Fig. 14 , in a cross section having the first direction z and the second direction x as in-plane directions, the second end 73 is convex in the second direction x.

[0059] Next, the effects of the semiconductor module A20 will be described.

[0060] The semiconductor module A20 includes a heat dissipation member 80, a substrate 11, a first semiconductor element 21, a first power terminal 12, a sealing resin 50, and a bonding material 70. The bonding material 70 is an insulator. The thermal conductivity of the bonding material 70 is higher than that of the sealing resin 50. The first power terminal 12 has a first outer portion 122 located outward from the sealing resin 50 as viewed in the first direction z. As viewed in the first direction z, the first outer portion 122 overlaps both the heat dissipation member 80 and the bonding material 70. Therefore, with this configuration, the semiconductor module A20 can also improve heat dissipation while suppressing a decrease in dielectric strength voltage. Furthermore, by sharing a configuration common to the semiconductor module A10, the semiconductor module A20 achieves the same effects as the semiconductor module A10.

[0061] In the semiconductor module A20, the bonding material 70 has a first end 72 that overlaps a first end surface 802 of the heat dissipation member 80 when viewed in the second direction x and covers at least a portion of the first end surface 802. In a cross section with the first direction z and the second direction x as in-plane directions, the second end 73 is convex toward the second direction x. With this configuration, the creepage distance from the first outer part 122 of the first power terminal 12 to the heat dissipation member 80 is further increased by the first end 72. This more effectively suppresses a decrease in the dielectric strength voltage of the semiconductor module A20.

[0062] Third Embodiment: A semiconductor module A30 according to a third embodiment of the present disclosure will be described with reference to Figure 15. In this figure, elements that are the same as or similar to those in the semiconductor module A10 and semiconductor device B10 described above are designated by the same reference numerals, and redundant description will be omitted. The cross-sectional position in Figure 15 corresponds to the cross-sectional position in Figure 4, which shows the semiconductor module A10.

[0063] In the semiconductor module A30, the configuration of the heat dissipation layer 114 of the semiconductor device B10 is different from that of the semiconductor module A10.

[0064] As shown in FIG. 15, the surface roughness of the heat dissipation surface 114A of the heat dissipation layer 114 of the semiconductor device B10 is greater than the surface roughness of the support surface 801 of the heat dissipation member 80.

[0065] Next, the effects of the semiconductor module A30 will be described.

[0066] The semiconductor module A30 includes a heat dissipation member 80, a substrate 11, a first semiconductor element 21, a first power terminal 12, a sealing resin 50, and a bonding material 70. The bonding material 70 is an insulator. The thermal conductivity of the bonding material 70 is higher than that of the sealing resin 50. The first power terminal 12 has a first outer portion 122 located outward from the sealing resin 50 as viewed in the first direction z. As viewed in the first direction z, the first outer portion 122 overlaps both the heat dissipation member 80 and the bonding material 70. Therefore, with this configuration, the semiconductor module A30 can also improve heat dissipation while suppressing a decrease in dielectric strength voltage. Furthermore, by sharing a configuration common to the semiconductor module A10, the semiconductor module A30 achieves the same effects as the semiconductor module A10.

[0067] In the semiconductor module A30, the surface roughness of the heat dissipation surface 114A of the heat dissipation layer 114 is greater than the surface roughness of the support surface 801 of the heat dissipation member 80. With this configuration, the bonding material 70 exhibits an anchoring effect on the heat dissipation surface 114A, thereby effectively preventing the bonding material 70 from peeling off from the heat dissipation surface 114A.

[0068] 16 and 17, a semiconductor module A40 according to a fourth embodiment of the present disclosure will be described. In the figures, elements that are the same as or similar to those in the semiconductor module A10 and semiconductor device B10 described above are designated by the same reference numerals, and redundant description will be omitted.

[0069] In the semiconductor module A40, the configuration of the heat dissipation member 80 is different from that of the semiconductor module A10.

[0070] 16 and 17 , the support portion 81 of the heat dissipation member 80 has two engaging portions 81A provided on the support surface 801. The two engaging portions 81A are spaced apart from each other in the second direction x. Each of the two engaging portions 81A extends in the third direction y. When viewed in the first direction z, the two engaging portions 81A overlap the bottom surface 52 of the sealing resin 50 of the semiconductor device B10. The bonding material 70 is in contact with each of the two engaging portions 81A. In the semiconductor module A40, each of the two engaging portions 81A is recessed from the support surface 801. Therefore, the bonding material 70 recesses into each of the two engaging portions 81A.

[0071] Next, the effects of the semiconductor module A40 will be described.

[0072] The semiconductor module A40 includes a heat dissipation member 80, a substrate 11, a first semiconductor element 21, a first power terminal 12, a sealing resin 50, and a bonding material 70. The bonding material 70 is an insulator. The thermal conductivity of the bonding material 70 is higher than that of the sealing resin 50. The first power terminal 12 has a first outer portion 122 located outward from the sealing resin 50 as viewed in the first direction z. As viewed in the first direction z, the first outer portion 122 overlaps both the heat dissipation member 80 and the bonding material 70. Therefore, with this configuration, the semiconductor module A40 can also improve heat dissipation while suppressing a decrease in dielectric strength voltage. Furthermore, by sharing a configuration common to the semiconductor module A10, the semiconductor module A40 achieves the same effects as the semiconductor module A10.

[0073] In the semiconductor module A40, the heat dissipation member 80 has an engaging portion 81A provided on the support surface 801. The bonding material 70 is in contact with the engaging portion 81A. With this configuration, the bonding material 70 exhibits an anchoring effect with respect to the support surface 801. This effectively prevents the bonding material 70 from peeling off from the support surface 801.

[0074] Fifth embodiment: A semiconductor module A50 according to a fifth embodiment of the present disclosure will be described with reference to Figures 18 to 20. In these figures, elements that are the same as or similar to those in the semiconductor module A10 and semiconductor device B10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted.

[0075] In the semiconductor module A50, the configuration of the heat dissipation member 80 is different from that of the semiconductor module A10.

[0076] 18 to 20 , the support portion 81 of the heat dissipation member 80 has a base portion 811 and a seat portion 812. The heat dissipation portion 82 of the heat dissipation member 80 is connected to the base portion 811. The base portion 811 has a base surface 811A that faces the same side as the support surface 801 in the first direction z. The bonding material 70 covers at least a portion of the base surface 811A.

[0077] 18 and 19 , the seat portion 812 protrudes from a base surface 811A of the base portion 811. The seat portion 812 includes a support surface 801. When viewed in the first direction z, the seat portion 812 is located between the first outer portion 122 of the first power terminal 12 of the semiconductor device B10 and the second outer portion 132 of the second power terminal 13 of the semiconductor device B10.

[0078] Next, the effects of the semiconductor module A50 will be described.

[0079] The semiconductor module A50 includes a heat dissipation member 80, a substrate 11, a first semiconductor element 21, a first power terminal 12, a sealing resin 50, and a bonding material 70. The bonding material 70 is an insulator. The thermal conductivity of the bonding material 70 is higher than that of the sealing resin 50. The first power terminal 12 has a first outer portion 122 located outward from the sealing resin 50 as viewed in the first direction z. As viewed in the first direction z, the first outer portion 122 overlaps both the heat dissipation member 80 and the bonding material 70. Therefore, with this configuration, the semiconductor module A50 can also improve heat dissipation while suppressing a decrease in dielectric strength voltage. Furthermore, by sharing a configuration common to the semiconductor module A10, the semiconductor module A50 achieves the same effects as the semiconductor module A10.

[0080] Sixth embodiment: A semiconductor module A60 according to a sixth embodiment of the present disclosure will be described with reference to Figures 21 to 35. In these figures, elements that are the same as or similar to those in the semiconductor module A10 and semiconductor device B10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted.

[0081] The semiconductor module A60 differs from the semiconductor module A10 in that it includes a semiconductor device B20 instead of the semiconductor device B10.

[0082] First, the semiconductor device B20 included in the semiconductor module A60 will be described with reference to FIGS. 24 to 35. The semiconductor device B20 is primarily used in inverters. The semiconductor device B20 includes a substrate 11, a first power terminal 12, two second power terminals 13, a third power terminal 14, a fourth power terminal 15, a plurality of first semiconductor elements 21, a plurality of second semiconductor elements 22, a first conductive member 31, a second conductive member 32, and a sealing resin 50. The semiconductor device B20 further includes a first signal terminal 161, a second signal terminal 162, a third signal terminal 171, a fourth signal terminal 172, two fifth signal terminals 18, a sixth signal terminal 19, a thermistor 23, a first wiring 61, and a second wiring 62. For ease of understanding, FIGS. 25 and 26 show the sealing resin 50 in a see-through manner. In FIG. 25, the see-through sealing resin 50 is indicated by imaginary lines. For ease of understanding, the sealing resin 50 and the second conductive member 32 are omitted from FIG.

[0083] The semiconductor device B20 converts DC power input to the first power terminal 12, the third power terminal 14, and the fourth power terminal 15 into AC power using a plurality of first semiconductor elements 21 and a plurality of second semiconductor elements 22. The converted AC power is input from each of the two second power terminals 13 to a power supply target such as a motor.

[0084] 31 , 34 , and 35 , the base material 11 is located on one side in the first direction z of each of the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22. As shown in FIG. 31 , the base material 11 includes an insulating layer 111, a first conductive layer 112, a second conductive layer 113, and a heat dissipation layer 114.

[0085] 31 , the insulating layer 111 includes a portion interposed in the first direction z between the heat dissipation layer 114 and the first and second conductive layers 112 and 113. The dimension of the insulating layer 111 in the first direction z is smaller than the dimension of each of the first and second conductive layers 112 and 113 in the first direction z.

[0086] As shown in FIGS. 31 , 34 , and 35 , the first conductive layer 112 and the second conductive layer 113 are located between the insulating layer 111 and the multiple first semiconductor elements 21 and multiple second semiconductor elements 22 in the first direction z. The first conductive layer 112 and the second conductive layer 113 are bonded to the insulating layer 111. The second conductive layer 113 contains copper. The first conductive layer 112 and the second conductive layer 113 are spaced apart from each other in the second direction x. As shown in FIGS. 31 and 34 , the first conductive layer 112 has a first mounting surface 112A facing the first direction z. The first mounting surface 112A faces the multiple first semiconductor elements 21. As shown in FIGS. 31 and 35 , the second conductive layer 113 has a second mounting surface 113A facing the same side as the first mounting surface 112A in the first direction z. The second mounting surface 113A faces the plurality of second semiconductor elements 22. When viewed in the first direction z, the second conductive layer 113 is located inward from a periphery 111A of the insulating layer 111. The second conductive layer 113 is covered with a sealing resin 50.

[0087] 31 , the heat dissipation layer 114 is located on the opposite side of the insulating layer 111 in the first direction z from the first conductive layer 112 and the second conductive layer 113. As shown in FIG. 28 , the heat dissipation layer 114 is exposed from the bottom surface 52 of the sealing resin 50. The dimension of the heat dissipation layer 114 in the first direction z is larger than the dimension of the insulating layer 111 in the first direction z.

[0088] As shown in FIGS. 27 and 34 , the multiple first semiconductor elements 21 are mounted on the first mounting surface 112A of the first conductive layer 112. The multiple first semiconductor elements 21 are arranged along the third direction y. As shown in FIGS. 27 and 35 , the multiple second semiconductor elements 22 are mounted on the second mounting surface 113A of the second conductive layer 113. The multiple second semiconductor elements 22 are arranged along the third direction y. The multiple first semiconductor elements 21 and the multiple second semiconductor elements 22 are, for example, MOSFETs. Alternatively, the multiple first semiconductor elements 21 and the multiple second semiconductor elements 22 may be switching elements such as IGBTs. Furthermore, the multiple first semiconductor elements 21 may be configured to include multiple switching elements and multiple freewheel diodes individually connected in parallel to these switching elements. Similarly, the multiple second semiconductor elements 22 may be configured to include multiple switching elements and multiple freewheel diodes individually connected in parallel to these switching elements. The free wheel diode is, for example, a Schottky barrier diode. In the description of the semiconductor device B20, the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22 are n-channel MOSFETs with a vertical structure. The plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22 include a compound semiconductor substrate. The compound semiconductor substrate contains silicon carbide.

[0089] As shown in FIGS. 27 and 32 , each of the plurality of first semiconductor elements 21 has a first electrode 211 , a second electrode 212 , a first gate electrode 213 and a first detection electrode 214 .

[0090] 32 , the first electrode 211 faces the first mounting surface 112A of the first conductive layer 112. In each of the multiple first semiconductor elements 21, a current flows from the first electrode 211 toward the inside of the element. Therefore, the first electrode 211 corresponds to the drain of each of the multiple first semiconductor elements 21. The first electrode 211 is conductively bonded to the first mounting surface 112A via the conductive bonding layer 29. As a result, the first electrode 211 of each of the multiple first semiconductor elements 21 is electrically connected to the first conductive layer 112.

[0091] 32 , the second electrode 212 is located on the side of the first conductive layer 112 opposite to the side facing the first mounting surface 112A in the first direction z. Therefore, the first electrode 211 and the second electrode 212 are located on opposite sides of each other in the first direction z. In each of the multiple first semiconductor elements 21, a current flows from the inside of the element toward the second electrode 212. Therefore, the second electrode 212 corresponds to the source of each of the multiple first semiconductor elements 21.

[0092] 27 , the first gate electrode 213 is located on the same side as the second electrode 212 in the first direction z. A gate voltage for driving the first semiconductor element 21 is applied to the first gate electrode 213. As shown in FIG. 27 , the area of ​​the first gate electrode 213 is smaller than the area of ​​the second electrode 212 when viewed in the first direction z.

[0093] 27 , the first detection electrode 214 is located on the same side as the second electrode 212 and the first gate electrode 213 in the first direction z. The first detection electrode 214 is located adjacent to the first gate electrode 213 in the third direction y. A voltage equivalent to the voltage applied to the second electrode 212 is applied to the first detection electrode 214. When viewed in the first direction z, the area of ​​the first detection electrode 214 is approximately equal to the area of ​​the first gate electrode 213.

[0094] As shown in FIGS. 27 and 33 , each of the plurality of second semiconductor elements 22 has a third electrode 221 , a fourth electrode 222 , a second gate electrode 223 and a second detection electrode 224 .

[0095] 33 , the third electrode 221 faces the second mounting surface 113A of the second conductive layer 113. In each of the multiple second semiconductor elements 22, a current flows from the third electrode 221 toward the inside of the element. Therefore, the third electrode 221 corresponds to the drain of each of the multiple second semiconductor elements 22. The third electrode 221 is conductively bonded to the second mounting surface 113A via the conductive bonding layer 29. As a result, the third electrode 221 of each of the multiple second semiconductor elements 22 is electrically connected to the second conductive layer 113.

[0096] 33 , the fourth electrode 222 is located on the side of the second conductive layer 113 opposite to the side facing the second mounting surface 113A in the first direction z. Therefore, the third electrode 221 and the fourth electrode 222 are located on opposite sides of each other in the first direction z. In each of the multiple second semiconductor elements 22, a current flows from the inside of the element toward the fourth electrode 222. Therefore, the fourth electrode 222 corresponds to the source of each of the multiple second semiconductor elements 22.

[0097] 27 , the second gate electrode 223 is located on the same side as the fourth electrode 222 in the first direction z. A gate voltage for driving the second semiconductor element 22 is applied to the second gate electrode 223. As shown in FIG. 27 , the area of ​​the second gate electrode 223 is smaller than the area of ​​the fourth electrode 222 when viewed in the first direction z.

[0098] 27 , the second detection electrode 224 is located on the same side as the fourth electrode 222 and the second gate electrode 223 in the first direction z. The second detection electrode 224 is located on both sides of the second gate electrode 223 in the third direction y. A voltage equivalent to the voltage applied to the fourth electrode 222 is applied to the second detection electrode 224. When viewed in the first direction z, the area of ​​the second detection electrode 224 is approximately equal to the area of ​​the second gate electrode 223.

[0099] As shown in FIGS. 27 and 31 , the first power terminal 12 is located on the opposite side of the second semiconductor elements 22 from the first semiconductor elements 21 in the second direction x. The first power terminal 12 is conductively bonded to the first conductive layer 112. This electrically connects the first power terminal 12 to the first electrodes 211 of the first semiconductor elements 21 via the first conductive layer 112. The first power terminal 12 is a P terminal (positive electrode) to which DC power to be converted is input. The first power terminal 12 extends from the first conductive layer 112 in the second direction x. As shown in FIGS. 25 and 31 , the first power terminal 12 has a first inner portion 121 and a first outer portion 122. The first inner portion 121 is conductively bonded to the first conductive layer 112 and is covered with a sealing resin 50. The first outer part 122 extends from the first inner part 121 in the second direction x and protrudes from the first side surface 53 of the sealing resin 50 .

[0100] As shown in FIG. 27 , each of the two second power terminals 13 is located on the opposite side of the first conductive layer 112 from the second conductive layer 113 in the second direction x. As shown in FIG. 31 , each of the two second power terminals 13 is conductively joined to the second conductive layer 113. This allows each of the two second power terminals 13 to be electrically connected to the third electrodes 221 of the second semiconductor elements 22 via the second conductive layer 113. AC power converted by the first semiconductor elements 21 and the second semiconductor elements 22 is output from each of the two second power terminals 13. In the semiconductor device B20, the two second power terminals 13 are spaced apart from each other in the third direction y. As shown in FIGS. 25 and 31 , each of the two second power terminals 13 has a second inner portion 131 and a second outer portion 132. The second inner part 131 is conductively joined to the second conductive layer 113 and is covered with the sealing resin 50. The second outer part 132 extends from the second inner part 131 in the second direction x and protrudes from the second side surface 54 of the sealing resin 50.

[0101] As shown in FIG. 27 , the third power terminal 14 is located on the opposite side of the second semiconductor elements 22 from the first semiconductor elements 21 in the second direction x. The third power terminal 14 is located on one side of the first power terminal 12 in the third direction y. The third power terminal 14 is electrically connected to the fourth electrodes 222 of the second semiconductor elements 22. The third power terminal 14 is an N-terminal (negative electrode) to which DC power to be converted is input. As shown in FIG. 25 , the third power terminal 14 has a third inner part 141 and a third outer part 142. The third inner part 141 is spaced apart from the first conductive layer 112 and is covered with the sealing resin 50. The third outer part 142 extends from the third inner part 141 in the second direction x and protrudes from the first side surface 53 of the sealing resin 50.

[0102] As shown in FIG. 27 , the fourth power terminal 15 is located on the opposite side of the second semiconductor elements 22 from the first semiconductor elements 21 in the second direction x. The fourth power terminal 15 is located on the opposite side of the third power terminal 14 from the first power terminal 12 in the third direction y. Therefore, the first power terminal 12 is located between the third power terminal 14 and the fourth power terminal 15 in the third direction y. The fourth power terminal 15 is electrically connected to the fourth electrodes 222 of the second semiconductor elements 22. Like the third power terminal 14, the fourth power terminal 15 is the N-terminal described above. As shown in FIG. 25 , the fourth power terminal 15 has a fourth inner portion 151 and a fourth outer portion 152. The fourth inner portion 151 is separated from the first conductive layer 112 and is covered with the sealing resin 50. The fourth outer part 152 extends from the fourth inner part 151 in the second direction x and protrudes from the first side surface 53 of the sealing resin 50 .

[0103] As shown in Fig. 31 , the first wiring 61 is bonded to the first mounting surface 112A of the first conductive layer 112. The first wiring 61 is located on the opposite side of the plurality of second semiconductor elements 22 with respect to the plurality of first semiconductor elements 21 in the second direction x. The first wiring 61 is electrically connected to the plurality of first semiconductor elements 21 and the first conductive layer 112. As shown in Figs. 3 and 31 , the first wiring 61 has a first mounting layer 611, a first metal layer 612, two first gate wiring layers 613, a first detection wiring layer 614, and a second detection wiring layer 616.

[0104] 26 , the first mounting layer 611 mounts two first gate wiring layers 613, a first detection wiring layer 614, and a second detection wiring layer 616. The first mounting layer 611 is an insulator. The first mounting layer 611 is made of, for example, ceramics. Alternatively, the first mounting layer 611 may be made of an insulating resin sheet.

[0105] 31 , the first metal layer 612 is located on a side facing the first mounting surface 112A of the first conductive layer 112 with the first mounting layer 611 as a reference in the first direction z. The first metal layer 612 is bonded to the first mounting layer 611. The first metal layer 612 contains copper. The first metal layer 612 is bonded to the first mounting surface 112A via a first bonding layer 68. The first bonding layer 68 is, for example, solder.

[0106] 26 and 31 , the two first gate wiring layers 613 are located on the opposite side of the first metal layer 612 with respect to the first mounting layer 611. The two first gate wiring layers 613 are bonded to the first mounting layer 611. A plurality of first wires 41 are conductively bonded to one of the two first gate wiring layers 613. The plurality of first wires 41 are individually conductively bonded to the first gate electrodes 213 of the plurality of first semiconductor elements 21. Furthermore, a plurality of sixth wires 46 are conductively bonded to each of the two first gate wiring layers 613. As a result, each of the two first gate wiring layers 613 is electrically connected to the first gate electrodes 213 of the plurality of first semiconductor elements 21.

[0107] 26 and 31 , the first detection wiring layer 614 is located on the opposite side of the first metal layer 612 with respect to the first mounting layer 611. The first detection wiring layer 614 is bonded to the first mounting layer 611. A plurality of second wires 42 are conductively bonded to the first detection wiring layer 614. Furthermore, the plurality of second wires 42 are individually conductively bonded to the first detection electrodes 214 of the plurality of first semiconductor elements 21. As a result, the first detection wiring layer 614 is electrically connected to the first detection electrodes 214 of the plurality of first semiconductor elements 21.

[0108] 26 and 31 , the second detection wiring layer 616 is located on the opposite side of the first metal layer 612 with respect to the first mounting layer 611. The second detection wiring layer 616 is bonded to the first mounting layer 611. A third wire 43 is conductively bonded to the second detection wiring layer 616. The third wire 43 is further conductively bonded to the first mounting surface 112A of the first conductive layer 112. This provides electrical continuity between the second detection wiring layer 616 and the first conductive layer 112.

[0109] 31 , the second wiring 62 is bonded to the second mounting surface 113A of the second conductive layer 113. The second wiring 62 is located on the opposite side of the plurality of first semiconductor elements 21 with respect to the plurality of second semiconductor elements 22 in the second direction x. The second wiring 62 is electrically connected to the plurality of second semiconductor elements 22 and the second conductive layer 113. As shown in FIGS. 3 and 31 , the second wiring 62 has a second mounting layer 621, a second metal layer 622, two second gate wiring layers 623, a third detection wiring layer 624, and two temperature detection wiring layers 625.

[0110] 26 , the second mounting layer 621 includes two second gate wiring layers 623, a third detection wiring layer 624, and two temperature detection wiring layers 625. The second mounting layer 621 is an insulator. The second mounting layer 621 is made of, for example, ceramics. Alternatively, the second mounting layer 621 may be made of an insulating resin sheet.

[0111] 31 , the second metal layer 622 is located on the side facing the second mounting surface 113A of the second conductive layer 113 with the second mounting layer 621 as the reference in the first direction z. The second metal layer 622 is bonded to the second mounting layer 621. The second metal layer 622 contains copper. The second metal layer 622 is bonded to the second mounting surface 113A via the first bonding layer 68.

[0112] 26 and 31 , the two second gate wiring layers 623 are located on the opposite side of the second metal layer 622 with respect to the second mounting layer 621. The two second gate wiring layers 623 are bonded to the second mounting layer 621. A plurality of fourth wires 44 are conductively bonded to one of the two second gate wiring layers 623. The plurality of fourth wires 44 are individually conductively bonded to the second gate electrodes 223 of the second semiconductor elements 22. Furthermore, a plurality of seventh wires 47 are conductively bonded to each of the two second gate wiring layers 623. As a result, each of the two second gate wiring layers 623 is electrically connected to the second gate electrodes 223 of the second semiconductor elements 22.

[0113] 26 and 31 , the third detection wiring layer 624 is located on the opposite side of the second metal layer 622 with respect to the second mounting layer 621. The third detection wiring layer 624 is bonded to the second mounting layer 621. A plurality of fifth wires 45 are conductively bonded to the third detection wiring layer 624. Furthermore, the plurality of fifth wires 45 are individually conductively bonded to the second detection electrodes 224 of the plurality of second semiconductor elements 22. As a result, the third detection wiring layer 624 is electrically connected to the second detection electrodes 224 of the plurality of second semiconductor elements 22.

[0114] 26 and 31 , the two temperature detection wiring layers 625 are located on the opposite side of the second mounting layer 621 from the second metal layer 622. The two temperature detection wiring layers 625 are bonded to the second mounting layer 621. The two temperature detection wiring layers 625 are adjacent to each other in a direction perpendicular to the first direction z.

[0115] 31 , each of the multiple sleeves 63 is conductively bonded to either the first wiring 61 or the second wiring 62 via a second bonding layer 69. The second bonding layer 69 is, for example, solder. The multiple sleeves 63 are made of a conductive material such as metal. Each of the multiple sleeves 63 has a cylindrical shape extending in the first direction z.

[0116] 26, the thermistor 23 is conductively joined to the two temperature detection wiring layers 625 of the second wiring 62. The thermistor 23 is used as a temperature detection sensor for the semiconductor device B20.

[0117] As shown in FIG. 24 , the first signal terminal 161, the second signal terminal 162, the third signal terminal 171, the fourth signal terminal 172, the two fifth signal terminals 18, and the sixth signal terminal 19 are formed as metal pins extending in the first direction z. These terminals protrude from a top surface 51 of a sealing resin 50 (described later). Furthermore, these terminals are individually press-fitted into a plurality of sleeves 63. As a result, each of these terminals is supported by one of the plurality of sleeves 63 and is electrically connected to one of the first wiring 61 and the second wiring 62.

[0118] 26 , the first signal terminal 161 is press-fitted into one of the multiple sleeves 63 that is conductively joined to one of the two first gate wiring layers 613 of the first wiring 61. This allows the first signal terminal 161 to be electrically connected to the first gate electrodes 213 of the multiple first semiconductor elements 21 via the two first gate wiring layers 613. A gate voltage for driving the multiple first semiconductor elements 21 is applied to the first signal terminal 161.

[0119] 26 , the second signal terminal 162 is press-fitted into one of the multiple sleeves 63 that is conductively joined to one of the two second gate wiring layers 623 of the second wiring 62. This allows the second signal terminal 162 to be electrically connected to the second gate electrodes 223 of the multiple second semiconductor elements 22 via the two second gate wiring layers 623. A gate voltage for driving the multiple second semiconductor elements 22 is applied to the second signal terminal 162.

[0120] As shown in Fig. 24 , the third signal terminal 171 is located adjacent to the first signal terminal 161 in the third direction y. As shown in Figs. 3 and 31 , the third signal terminal 171 is press-fitted into one of the multiple sleeves 63 that is conductively joined to the first detection wiring layer 614 of the first wiring 61. This allows the third signal terminal 171 to be electrically connected to the first detection electrodes 214 of each of the multiple first semiconductor elements 21 via the first detection wiring layer 614. A voltage equivalent to the voltage applied to the first detection electrodes 214 of each of the multiple first semiconductor elements 21 is applied to the third signal terminal 171.

[0121] As shown in Fig. 24 , the fourth signal terminal 172 is located adjacent to the second signal terminal 162 in the third direction y. As shown in Figs. 3 and 31 , the fourth signal terminal 172 is press-fitted into one of the multiple sleeves 63 that is conductively joined to the third detection wiring layer 624 of the second wiring 62. This allows the fourth signal terminal 172 to be electrically connected to the second detection electrodes 224 of each of the multiple second semiconductor elements 22 via the third detection wiring layer 624. A voltage equivalent to the voltage applied to the second detection electrodes 224 of each of the multiple second semiconductor elements 22 is applied to the fourth signal terminal 172.

[0122] As shown in Fig. 24 , the two fifth signal terminals 18 are located on the opposite side of the second signal terminal 162 from the fourth signal terminal 172 in the third direction y. The two fifth signal terminals 18 are adjacent to each other in the third direction y. As shown in Fig. 3 , the two fifth signal terminals 18 are individually press-fitted into two of the multiple sleeves 63 that are individually conductively joined to the two temperature detection wiring layers 625 of the second wiring 62. As a result, the two fifth signal terminals 18 are electrically connected to the thermistor 23.

[0123] As shown in Fig. 24 , the sixth signal terminal 19 is located on the opposite side of the first signal terminal 161 in the third direction y with respect to the third signal terminal 171. As shown in Fig. 3 , the sixth signal terminal 19 is press-fitted into one of the multiple sleeves 63 that is conductively joined to the second detection wiring layer 616 of the first wiring 61. This provides electrical continuity between the sixth signal terminal 19 and the first conductive layer 112 via the second detection wiring layer 616. A voltage equivalent to the DC power input to the first power terminal 12 and the two third power terminals 14 is applied to the sixth signal terminal 19.

[0124] As shown in FIGS. 27 and 32 , the first conductive member 31 is conductively bonded to the second electrodes 212 of the multiple first semiconductor elements 21 and the second mounting surface 113A of the second conductive layer 113. This allows the second electrodes 212 of each of the multiple first semiconductor elements 21 to be electrically connected to the second conductive layer 113. The first conductive member 31 contains copper. The first conductive member 31 is a metal clip. As shown in FIG. 27 , the first conductive member 31 has a first main portion 311, multiple first bonding portions 312, multiple first connecting portions 313, multiple second bonding portions 314, and multiple second connecting portions 315.

[0125] The first main portion 311 forms a main portion of the first conductive member 31. As shown in Fig. 27 , the first main portion 311 extends in the third direction y. As shown in Fig. 31 , the first main portion 311 straddles between the first conductive layer 112 and the second conductive layer 113.

[0126] As shown in FIGS. 27 and 32 , each of the multiple first bonding portions 312 is conductively bonded to the second electrode 212 of one of the multiple first semiconductor elements 21 .

[0127] 27 , the plurality of first connecting portions 313 are connected to the first main portion 311 and the plurality of first joint portions 312. The plurality of first connecting portions 313 are spaced apart from one another in the third direction y. As shown in FIG. 32 , when viewed in the third direction y, the plurality of first connecting portions 313 are inclined in a direction away from the first mounting surface 112A of the first conductive layer 112 as they extend from the plurality of first joint portions 312 toward the first main portion 311.

[0128] 27 and 31 , the plurality of second bonding portions 314 are conductively bonded to the second mounting surface 113A of the second conductive layer 113. The second bonding portions 314 are arranged along the third direction y.

[0129] 27 and 31 , one side of each of the plurality of second connecting portions 315 in the second direction x is connected to the first main portion 311. In addition, the other side of each of the plurality of second connecting portions 315 in the second direction x is individually connected to the plurality of second joint portions 314. When viewed in the third direction y, the second connecting portion 315 is inclined in a direction away from the second mounting surface 113A of the second conductive layer 113 as it extends from the second joint portion 314 toward the first main portion 311.

[0130] 32 , a conductive bonding layer 29 is located between the second electrode 212 of each of the multiple first semiconductor elements 21 and each of the multiple first bonding portions 312. The conductive bonding layer 29 conductively bonds one of the multiple first bonding portions 312 to one of the multiple first semiconductor elements 21. As shown in FIG. 31 , the conductive bonding layer 29 is located between the second mounting surface 113A of the second conductive layer 113 and each of the multiple second bonding portions 314. The conductive bonding layer 29 conductively bonds the second mounting surface 113A to the multiple second bonding portions 314.

[0131] As shown in FIG. 33 , the second conductive member 32 is conductively bonded to the second electrodes 212 of the plurality of second semiconductor elements 22 and the third inner portions 141 of the two third power terminals 14. As a result, the second electrodes 212 of each of the plurality of second semiconductor elements 22 are electrically connected to the two third power terminals 14. The second conductive member 32 contains copper. The second conductive member 32 is a metal clip. As shown in FIG. 3 , the second conductive member 32 has two second main portions 321, a plurality of third joint portions 322, a plurality of third connecting portions 323, two fourth joint portions 324, two fourth connecting portions 325, a plurality of intermediate portions 326, and a cross beam portion 327.

[0132] 26 , the two second main portions 321 are spaced apart from each other in the third direction y. The two second main portions 321 extend in the second direction x. As shown in FIG. 31 , the two second main portions 321 are located on the opposite side of the first conductive layer 112 and the second conductive layer 113 from the first conductive member 31 in the first direction z.

[0133] 26 , the multiple intermediate portions 326 are located between two second main portions 321 in the third direction y. The multiple intermediate portions 326 are arranged along the third direction y. Each of the multiple intermediate portions 326 extends in the second direction x.

[0134] As shown in FIGS. 31 and 33 , each of the plurality of third bonding portions 322 is conductively bonded to one of the second electrodes 212 of the plurality of second semiconductor elements 22 .

[0135] 26 , one side of each of the plurality of third connecting portions 323 in the third direction y is connected to one of the plurality of third joint portions 322. In addition, the other side of each of the plurality of third connecting portions 323 in the third direction y is connected to one of the two second main portions 321 and one of the plurality of intermediate portions 326. When viewed in the second direction x, each of the plurality of third connecting portions 323 is inclined in a direction away from the second mounting surface 113A of the second conductive layer 113 as it moves from one of the plurality of third joint portions 322 toward one of the two second main portions 321 and one of the plurality of intermediate portions 326.

[0136] As shown in FIG. 26 , the two fourth joint portions 324 are conductively joined to the third inner portion 141 of the third power terminal 14 and the fourth inner portion 151 of the fourth power terminal 15 , respectively.

[0137] 26 , one side of each of the two fourth connecting portions 325 in the second direction x is connected to two fourth joint portions 324. In addition, the other side of each of the two fourth connecting portions 325 in the second direction x is individually connected to two second main portions 321. When viewed in the third direction y, the two fourth connecting portions 325 are inclined in a direction away from the first mounting surface 112A of the first conductive layer 112 as they move from the two fourth joint portions 324 toward the two second main portions 321.

[0138] 26 , the cross beam portion 327 is located between the two second main portions 321 in the third direction y. The cross beam portion 327 extends in the third direction y. Both sides of the cross beam portion 327 in the third direction y are connected to the two second main portions 321. When viewed in the first direction z, the cross beam portion 327 overlaps the first conductive member 31. A plurality of intermediate portions 326 are connected to the side of the cross beam portion 327 in the second direction x where the plurality of second semiconductor elements 22 are located.

[0139] 33 , a conductive bonding layer 29 is located between the fourth electrode 222 of each of the multiple second semiconductor elements 22 and each of the multiple third bonding portions 322. The conductive bonding layer 29 conductively bonds one of the multiple third bonding portions 322 to one of the multiple second semiconductor elements 22.

[0140] 24 and 28 , the sealing resin 50 has two recesses 56. The two recesses 56 are recessed from the first side surface 53 in the second direction x. The two recesses 56 extend from the top surface 51 to the bottom surface 52 in the first direction z. The two recesses 56 are located on both sides of the first power terminal 12 in the third direction y.

[0141] Next, the overall configuration of the semiconductor module A60 will be described with reference to FIGS.

[0142] In the semiconductor module A60, the configurations of the bonding material 70 and the heat dissipation member 80 are the same as those of the semiconductor module A10.

[0143] 21 , when viewed in the first direction z, the third outer part 142 of the third power terminal 14 of the semiconductor device B10 overlaps with each of the support part 81 of the heat dissipation member 80 and the bonding material 70. When viewed in the first direction z, the fourth outer part 152 of the fourth power terminal 15 of the semiconductor device B10 overlaps with each of the support part 81 and the bonding material 70. When viewed in the first direction z, each of the third outer part 142 and the fourth outer part 152 overlaps with the support surface 801 of the heat dissipation member 80.

[0144] Next, the effects of the semiconductor module A60 will be described.

[0145] The semiconductor module A60 includes a heat dissipation member 80, a substrate 11, a first semiconductor element 21, a first power terminal 12, a sealing resin 50, and a bonding material 70. The bonding material 70 is an insulator. The thermal conductivity of the bonding material 70 is higher than that of the sealing resin 50. The first power terminal 12 has a first outer portion 122 located outward from the sealing resin 50 as viewed in the first direction z. As viewed in the first direction z, the first outer portion 122 overlaps both the heat dissipation member 80 and the bonding material 70. Therefore, with this configuration, the semiconductor module A60 can also improve heat dissipation while suppressing a decrease in dielectric strength voltage. Furthermore, by incorporating a configuration common to the semiconductor module A10, the semiconductor module A60 achieves the same effects as the semiconductor module A10.

[0146] The semiconductor module A60 further includes a first signal terminal 161 that is electrically connected to the first gate electrode 213 of the first semiconductor element 21. A portion of the first signal terminal 161 protrudes from the top surface 51 of the sealing resin 50. With this configuration, when a control board that is electrically connected to the first signal terminal 161 is arranged in the semiconductor module A60, the arrangement of the control board becomes more compact.

[0147] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0148] In the semiconductor modules A10 to A50 according to the present disclosure, a plurality of semiconductor devices B10 may be provided in place of the semiconductor device B10. In this case, the plurality of semiconductor devices B10 are arranged along the third direction y with respect to the support surface 801 of the heat dissipation member 80. Similarly, in the semiconductor module A60 according to the present disclosure, a plurality of semiconductor devices B20 may be provided in place of the semiconductor device B20.

[0149] The present disclosure includes embodiments described in the following supplementary notes. Supplementary note 1. A semiconductor module (A10) comprising: a heat dissipation member (80) having a support surface (801) facing one side in a first direction (z); a base (11) facing the support surface; a first semiconductor element (21) located on the opposite side of the base from the heat dissipation member and mounted on the base; a first power terminal (12) conducting to the first semiconductor element; a sealing resin (50) covering the first semiconductor element; and a bonding material (70) that is an insulator and bonds the support surface and the base, wherein the thermal conductivity of the bonding material is higher than the thermal conductivity of the sealing resin, and the first power terminal has a first outer part (122) located outward of the sealing resin when viewed in the first direction, and the first outer part overlaps the heat dissipation member and the bonding material when viewed in the first direction. Supplementary note 2. The semiconductor module (A10) according to Supplementary Note 1, wherein the thermal conductivity of the heat dissipation member (80) is higher than the thermal conductivity of the bonding material (70).Supplementary Note 3. The semiconductor module (A10) according to Supplementary Note 2, wherein the first outer part (122) overlaps the support surface (801) when viewed in the first direction (z).Supplementary Note 4. The semiconductor module (A10) according to Supplementary Note 3, wherein the support surface (801) includes a first edge (801A) located on the opposite side of the sealing resin (50) with respect to the first outer part (122) in a second direction (x) perpendicular to the first direction (z), and the bonding material (70) is in contact with the first edge.Supplementary Note 5. The semiconductor module (A20) according to Supplementary Note 4, wherein the heat dissipation member (80) has a first end surface (802) facing the second direction (x) and connected to the first edge (801A), and the bonding material (70) covers at least a portion of the first end surface.Supplementary Note 6. The semiconductor module (A20) according to Supplementary Note 5, wherein the bonding material (70) has a first end portion (72) overlapping the first end surface (802) when viewed in the second direction (x), and in a cross section having the first direction (z) and the second direction as in-plane directions, the first end portion is convex toward the second direction.Supplementary Note 7. The semiconductor module (A10) according to any one of Supplementary Notes 4 to 6, wherein the base material (11) includes an insulating layer (111), a first conductive layer (112) located between the insulating layer and the first semiconductor element (21) in the first direction (z) and bonded to the insulating layer, and a heat dissipation layer (114) located on the opposite side of the insulating layer from the first conductive layer and bonded to the insulating layer, the first semiconductor element is conductively bonded to the first conductive layer, the heat dissipation layer faces the support surface (801) and has a heat dissipation surface (114A) exposed from the sealing resin (50), and the bonding material (70) covers the heat dissipation surface. The semiconductor module (A10) according to Appendix 7, wherein the sealing resin (50) has a bottom surface (52) facing the support surface (801) and surrounding the heat dissipation surface (114A), and the bonding material (70) covers the bottom surface. Appendix 9. The semiconductor module (A10) according to Appendix 8, wherein the sealing resin (50) has a convex portion (55) protruding from the bottom surface (52), the heat dissipation surface (114A) is exposed from the convex portion, and the bonding material (70) covers the convex portion. Appendix 10. The semiconductor module (A10) according to Appendix 9, wherein the bonding material (70) includes a first portion (701) sandwiched between the support surface (801) and the heat dissipation surface (114A), and a second portion (702) connected to the first portion and sandwiched between the support surface and the bottom surface (52), and the dimension of the first portion in the first direction (z) is smaller than the dimension of the second portion in the first direction. Appendix 11. The semiconductor module (A10) according to Appendix 8, wherein the surface roughness of the heat dissipation surface (114A) is larger than the surface roughness of the support surface (801). Appendix 12. The semiconductor module (A40) according to Appendix 8, wherein the heat dissipation member (80) has an engaging portion (81A) provided on the support surface (801), and the bonding material (70) is in contact with the engaging portion. Appendix 13. The semiconductor module (A10) described in Appendix 8, wherein the first semiconductor element (21) has a first electrode (211) and a second electrode (212) positioned opposite each other in the first direction (z), and the first electrode is conductively joined to the first conductive layer (112).Appendix 14. The semiconductor module (A10) according to Appendix 13, wherein the first power terminal (12) has a first inner part (121) connected to the first outer part (122) and covered with the sealing resin (50), and the first inner part is conductively joined to the first conductive layer (112). Appendix 15. The semiconductor module (A10) according to Appendix 14 further includes a second power terminal (13) electrically connected to the second electrode (212), the second power terminal having a second outer part (132) positioned outward from the sealing resin (50) as viewed in the first direction (z), and a second inner part (131) connected to the second outer part and covered with the sealing resin, the second outer part being positioned on the opposite side of the sealing resin from the first outer part (122) in the second direction (x), and the second outer part overlaps both the support surface (801) and the bonding material (70) as viewed in the first direction. Appendix 16. The semiconductor module (A10) according to Appendix 15, wherein the second inner part (131) is conductively joined to the second electrode (212). Appendix 17. Attachment 16: The semiconductor module (A10) according to attachment 16, further comprising a first signal terminal (161) electrically connected to the first semiconductor element (21), wherein the first signal terminal has an outer portion (161B) located outward from the sealing resin (50) as viewed in the first direction (z), and an inner portion (161A) connected to the outer portion and covered by the sealing resin, wherein the outer portion overlaps each of the support surface (801) and the bonding material (70) as viewed in the first direction. Attachment 18: The semiconductor module (A10) according to attachment 17, wherein the outer portion (161B) is located on the same side as the second outer portion (132) with respect to the sealing resin (50) as a reference in the second direction (x).Appendix 19. The semiconductor module (A60) according to Appendix 15, further comprising a second semiconductor element (22) electrically connected to the second electrode (212) and the second power terminal (13), wherein the base material (11) includes a second conductive layer (113) located on the same side as the first conductive layer (112) with respect to the insulating layer (111) in the first direction (z) and bonded to the insulating layer, and wherein the second semiconductor element and the second inner portion (131) are each conductively bonded to the second conductive layer. Appendix 20. The semiconductor module (A60) according to Appendix 19 further includes a third power terminal (14) electrically connected to the second semiconductor element (22), the third power terminal having a third outer part (142) positioned outward of the sealing resin (50) as viewed in the first direction (z), the third outer part being positioned on the same side as the first outer part (122) with respect to the sealing resin as a reference in the second direction (x), and the third outer part overlaps each of the support surface (801) and the bonding material (70) as viewed in the first direction. Appendix 21. The semiconductor module (A40) according to Appendix 12, wherein the engaging part (81A) is recessed from the support surface (801). Appendix 22. The semiconductor module (A10) according to Appendix 15, wherein the support surface (801) includes a second edge (801B) located on the opposite side of the sealing resin (50) with respect to the second outer part (132) in the second direction (x), and the bonding material (70) is in contact with the second edge. Appendix 23. The semiconductor module (A20) according to Appendix 22, wherein the heat dissipation member (80) has a second end surface (803) facing the second direction (x) and connected to the second edge (801B), and the bonding material (70) covers at least a portion of the second end surface. Appendix 24. The semiconductor module (A20) described in Appendix 23, wherein the bonding material (70) has a second end (73) that overlaps the second end surface (803) when viewed in the second direction (x), and in a cross section with the first direction (z) and the second direction as in-plane directions, the second end is convex toward the second direction.Supplementary Note 25. The semiconductor device (A10) according to Supplementary Note 15, wherein the heat dissipation member (80) has a support portion (81) including the support surface (801), and a heat dissipation portion (82) located on the opposite side of the support portion from the base material (11) and connected to the support portion, and wherein a dimension of the heat dissipation portion in the first direction (z) is larger than a dimension of the support portion in the first direction.Supplementary Note 26. The semiconductor module (A60) according to Supplementary Note 20, further comprising a first signal terminal (161) electrically connected to the first semiconductor element (21), wherein the sealing resin (50) has a top surface (51) facing opposite to the bottom surface (52) in the first direction (z), and a portion of the first signal terminal protrudes from the top surface in the first direction.

[0150] A10 to A60: semiconductor modules, B10, B20: semiconductor device, 11: base material, 111: insulating layer, 111A: periphery, 112, 113: first conductive layer, second conductive layer, 112A, 113A: first mounting surface, second mounting surface, 114: heat dissipation layer, 114A: heat dissipation surface, 115: relay layer, 12: first power terminal, 121: first inner part, 122: first outer part, 13: second power terminal, 131: second inner part, 132: second outer part, 14: third power terminal, 141: third inner part, 142: third outer part, 15: fourth power terminal, 151: fourth inner part, 152: fourth outer part, 161, 162: first signal terminal, second signal terminal, 161A: inner part, 161B: outer part, 171, 172: third signal terminal, fourth signal terminal, 18, 19: fifth signal terminal, sixth signal terminal, 21: first semiconductor element, 21A, 21B: first element, second element, 211: first electrode, 212: second electrode, 213: first gate electrode, 214: first detection electrode, 22: second semiconductor element, 221: third electrode, 222: fourth electrode, 223: second gate electrode, 224: second detection electrode, 23: thermistor, 29: conductive bonding layer, 31: First conductive member, 311: first main portion, 312: first joint portion, 313: first connecting portion, 314: second joint portion, 315: second connecting portion, 32: second conductive member, 321: second main portion, 322: third joint portion, 323: third connecting portion, 324: fourth joint portion, 325: fourth connecting portion, 326: intermediate portion, 327: cross beam portion, 33, 34, 35: first conductive member, second conductive member, third conductive member, 41 to 47: first wire to seventh wire, 50: sealing resin, 51: top surface, 52: bottom surface, 53, 54: first side surface, second side surface, 55: convex portion, 56: concave portion, 61: first wiring, 61 1: first mounting layer, 612: first metal layer, 613: first gate wiring layer, 614: first detection wiring layer, 616: second detection wiring layer, 62: second wiring, 621: second mounting layer, 622: second metal layer, 623: second gate wiring layer, 624: third detection wiring layer, 625: temperature detection wiring layer, 63: sleeve, 68, 69: first bonding layer, second bonding layer, 70: bonding material, 701: first part, 702: second part, 71: main part, 72, 73: first end, second end, 80: heat dissipation member, 801: support surface, 801A, 801B: first edge, second edge, 802, 803: first end surface,Second end face, 81: Support part, 81A: Assembly part, 811: Base part, 811A: Base surface, 812: Seat part, 82: Heat dissipation part, d1, d2: Dimensions, z, x, y: First direction, Second direction, Third direction

Claims

a heat dissipation member having a support surface facing one side in the first direction; a substrate facing the support surface; a first semiconductor element mounted on the base, the first semiconductor element being located on the opposite side of the base from the heat dissipation member; a first power terminal electrically connected to the first semiconductor element; a sealing resin that covers the first semiconductor element; a bonding material that is an insulator and bonds the support surface and the base material, the thermal conductivity of the bonding material is higher than the thermal conductivity of the sealing resin, the first power terminal has a first outer portion located outward of the sealing resin when viewed in the first direction; When viewed in the first direction, the first outer portion overlaps each of the heat dissipation member and the bonding material. 　 The semiconductor module according to claim 1 , wherein the heat dissipation member has a thermal conductivity higher than that of the bonding material. 　 The semiconductor module according to claim 2 , wherein the first outer portion overlaps the support surface when viewed in the first direction. 　 the support surface includes a first edge located on the opposite side of the sealing resin with respect to the first outer portion in a second direction perpendicular to the first direction, The semiconductor module according to claim 3 , wherein the bonding material is in contact with the first edge. 　 the heat dissipation member has a first end surface facing the second direction and connected to the first edge, The semiconductor module according to claim 4 , wherein the bonding material covers at least a portion of the first end surface. 　 the bonding material has a first end portion overlapping the first end surface when viewed in the second direction, The semiconductor module according to claim 5 , wherein in a cross section having the first direction and the second direction as in-plane directions, the first end portion has a convex shape facing the second direction. 　 the base material includes an insulating layer, a first conductive layer located between the insulating layer and the first semiconductor element in the first direction and bonded to the insulating layer, and a heat dissipation layer located on the opposite side of the insulating layer from the first conductive layer and bonded to the insulating layer, the first semiconductor element is conductively bonded to the first conductive layer; the heat dissipation layer has a heat dissipation surface facing the support surface and exposed from the sealing resin; 7. The semiconductor module according to claim 4, wherein the bonding material covers the heat dissipation surface. 　 the sealing resin has a bottom surface facing the support surface and surrounding the heat dissipation surface; The semiconductor module according to claim 7 , wherein the bonding material covers the bottom surface. 　 the sealing resin has a protrusion protruding from the bottom surface, the heat dissipation surface is exposed from the protrusion, The semiconductor module according to claim 8 , wherein the bonding material covers the protrusion. 　 the bonding material includes a first portion sandwiched between the support surface and the heat dissipation surface, and a second portion connected to the first portion and sandwiched between the support surface and the bottom surface, The semiconductor module according to claim 9 , wherein a dimension of the first portion in the first direction is smaller than a dimension of the second portion in the first direction. 　 The semiconductor module according to claim 8 , wherein the surface roughness of the heat dissipation surface is greater than the surface roughness of the support surface. 　 the heat dissipation member has an engagement portion provided on the support surface, The semiconductor module according to claim 8 , wherein the bonding material is in contact with the engaging portion. 　 the first semiconductor element has a first electrode and a second electrode positioned opposite to each other in the first direction; The semiconductor module according to claim 8 , wherein the first electrode is conductively bonded to the first conductive layer. 　 the first power terminal has a first inner portion connected to the first outer portion and covered with the sealing resin, The semiconductor module according to claim 13 , wherein the first inner portion is conductively joined to the first conductive layer. 　 a second power terminal electrically connected to the second electrode; the second power terminal has a second outer portion located outward of the sealing resin when viewed in the first direction, and a second inner portion connected to the second outer portion and covered with the sealing resin, the second outer part is located on the opposite side of the sealing resin from the first outer part in the second direction, The semiconductor module according to claim 14 , wherein the second outer portion overlaps both the support surface and the bonding material when viewed in the first direction. 　 The semiconductor module according to claim 15 , wherein the second inner portion is conductively joined to the second electrode. 　 a first signal terminal electrically connected to the first semiconductor element; the first signal terminal has an outer portion located outward of the sealing resin when viewed in the first direction, and an inner portion connected to the outer portion and covered with the sealing resin, The semiconductor module according to claim 16 , wherein the outer portion overlaps both the support surface and the bonding material when viewed in the first direction. 　 The semiconductor module according to claim 17 , wherein the outer part is located on the same side as the second outer part with respect to the sealing resin in the second direction. 　 a second semiconductor element electrically connected to the second electrode and the second power terminal; the base material includes a second conductive layer located on the same side as the first conductive layer with respect to the insulating layer in the first direction and bonded to the insulating layer; The semiconductor module according to claim 15 , wherein the second semiconductor element and the second inner portion are each conductively bonded to the second conductive layer. 　 a third power terminal electrically connected to the second semiconductor element; the third power terminal has a third outer portion located outward of the sealing resin when viewed in the first direction, the third outer part is located on the same side as the first outer part with respect to the sealing resin in the second direction, The semiconductor module according to claim 19 , wherein the third outer portion overlaps both the support surface and the bonding material when viewed in the first direction.

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