Atomization core, atomizer and electronic atomization device

Abstract

The present application belongs to the field of electronic atomization. Disclosed are an atomization core, an atomizer and an electronic atomization device. The atomization core comprises a semiconductor substrate, which has a liquid absorption surface and an atomization surface that are opposite each other, wherein the semiconductor substrate has a plurality of first liquid-conducting through holes penetrating from the liquid absorption surface to the atomization surface, the first liquid-conducting through holes being used for conveying an atomization substrate; a semiconductor heating layer, which is arranged on the atomization surface and has a plurality of second liquid-conducting through holes, wherein the second liquid-conducting through holes and the first liquid-conducting through holes are aligned on a one-to-one basis and are in communication with each other; and an electrode, which is at least partially arranged on the atomization surface and is electrically connected to the semiconductor heating layer.

Description

Atomizer coils, atomizers, and electronic atomization devices

[0001] This application claims priority to Chinese Patent Application No. 202422255906.X, filed on September 12, 2024, entitled "Atomizing Core, Atomizer and Electronic Atomizing Device", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of electronic atomization, and in particular to an atomizing core, an atomizer, and an electronic atomization device. Background Technology

[0003] Currently, most atomizing coils are made of cotton or ceramic. An atomizing coil consists of a liquid guiding element and a heating element. The liquid guiding element is made of ceramic or cotton materials, including but not limited to pure cotton fibers and linen. The heating element is made of metal materials such as a printed film, metal mesh, or spring wire.

[0004] Both cotton wicks and ceramic wicks are porous media with disordered internal pores. Cotton wicks are relatively soft and prone to deformation during assembly. Different wick materials and different levels of compression result in different pore sizes, affecting the safety, flavor, and atomization of the e-cigarette. While porous ceramic wicks have relatively fixed pore sizes, they still contain extra-large pores, extra-small pores, and blind pores. These abnormal pores can cause problems such as carbon buildup and burnt wicks, affecting the safety and user experience of the e-cigarette.

[0005] Application content

[0006] This application provides an atomizing core, an atomizer, and an electronic atomizing device to improve the atomization performance of the atomizing core.

[0007] In a first aspect, this application discloses an atomizing core, including a semiconductor substrate, a semiconductor heating layer, and electrodes; the semiconductor substrate has a liquid-absorbing surface and an atomizing surface opposite each other; the semiconductor substrate has a plurality of first liquid-guiding through holes extending from the liquid-absorbing surface to the atomizing surface, the first liquid-guiding through holes being used to conduct the atomizing matrix; the semiconductor heating layer is disposed on the atomizing surface and has a plurality of second liquid-guiding through holes; the second liquid-guiding through holes are aligned and connected to the first liquid-guiding through holes one by one; the electrodes are at least partially disposed on the atomizing surface and electrically connected to the semiconductor heating layer.

[0008] In one embodiment, a sink is formed on the atomization surface of the semiconductor substrate; the semiconductor heating layer is a doped semiconductor substrate, which is embedded in the sink and in contact with the bottom wall of the sink; a second liquid guiding hole penetrates the doped semiconductor substrate.

[0009] In an embodiment, the sink groove is open at both ends along a first direction; two side walls of the sink groove along a second direction respectively form a limiting area; the first direction and the second direction are arranged intersectingly; the shape and size of the doped semiconductor substrate are adapted to the shape and size of the sink groove.

[0010] In an embodiment, the limiting area of the semiconductor substrate and the part of the doped semiconductor substrate in the limiting area are non-porous areas; the first liquid guide through hole is only arranged in the sink groove area; the number of electrodes is two, arranged on opposite sides of the atomization surface along the second direction; part of each electrode is arranged on the surface of the semiconductor substrate, and part of each electrode is arranged on the surface of the non-porous area of the doped semiconductor substrate.

[0011] In an embodiment, the semiconductor substrate is an intrinsic semiconductor substrate; the atomization surface of the intrinsic semiconductor substrate is locally doped to form a semiconductor heating layer; the thickness of the semiconductor heating layer is less than the thickness of the intrinsic semiconductor substrate; the first liquid guide through hole and the corresponding second liquid guide through hole are different hole sections of the same through hole of the intrinsic semiconductor substrate.

[0012] In an embodiment, the semiconductor substrate is an intrinsic silicon substrate, and the semiconductor heating layer is a doped conductive silicon layer or a doped non-silicon semiconductor layer; the thickness of the semiconductor heating layer is less than the thickness of the semiconductor substrate and is less than or equal to 10 microns.

[0013] In an embodiment, the resistivity of the semiconductor heating layer is less than the resistivity of the semiconductor substrate.

[0014] In an embodiment, the first liquid guide through hole and the second liquid guide through hole are straight through holes; the aperture of the straight through hole is 5 microns to 100 microns.

[0015] In an embodiment, the atomization core further comprises a substrate arranged on the liquid absorption surface; the substrate comprises a glass substrate, a quartz substrate or a dense ceramic substrate; the substrate has a plurality of third liquid guide through holes arranged in one-to-one correspondence with the second liquid guide through holes and in communication with the second liquid guide through holes; the aperture of the third liquid guide through hole is greater than or equal to the aperture of the second liquid guide through hole and greater than or equal to the aperture of the first liquid guide through hole.

[0016] In an embodiment, the aperture of the third liquid guide through hole is less than or equal to 100 microns.

[0017] In a second aspect, the application further discloses an atomizer comprising a liquid storage cavity and the atomization core of the first aspect; the liquid storage cavity is used for storing an atomization substrate and is in communication with the atomization core.

[0018] In a third aspect, the application further discloses an electronic atomization device comprising a battery assembly and the atomizer of the second aspect.

[0019] The application provides an atomizing core, an atomizer and an electronic atomization device. The atomizing core comprises a semiconductor substrate, a semiconductor heating layer and an electrode. The semiconductor substrate has opposite liquid suction surfaces and atomizing surfaces. The semiconductor substrate has a plurality of first liquid conducting through holes penetrating from the liquid suction surface to the atomizing surface, and the first liquid conducting through holes are used for conducting an atomization base. The semiconductor heating layer is arranged on the atomizing surface and has a plurality of second liquid conducting through holes. The second liquid conducting through holes are arranged in one-to-one correspondence with the first liquid conducting through holes and are communicated with the first liquid conducting through holes. The electrode is arranged at least partially on the atomizing surface and is electrically connected with the semiconductor heating layer. The semiconductor substrate in the application plays a role of conducting liquid in the atomizing core. Compared with a traditional ceramic liquid conducting piece, the semiconductor substrate obtains the first liquid conducting through holes by using a MEMS processing technology. The first liquid conducting through holes are ordered, the apertures are relatively fixed and straight, and the first liquid conducting through holes are beneficial to the transmission of the atomization base, so that the transmission efficiency is high and the taste restoration is good. In addition, the semiconductor heating layer replaces the traditional metal heating piece. The semiconductor material is doped by using a semiconductor technology to have conductivity. The problems such as metal corrosion can be avoided during atomization, so that the heavy metal can be greatly reduced or even eliminated, and the safety is improved. In addition, the second liquid conducting through holes are beneficial to the uniform distribution of the atomization base in the semiconductor heating layer, and the consistency of heating is improved.

[0020] The above description is only a summary of the technical scheme of the application. In order to more clearly understand the technical means of the application, the specific embodiments of the application can be implemented according to the content of the description, and in order to make the above and other purposes, characteristics and advantages of the application more obvious and easy to understand, the following will specifically describe the embodiments of the application. BRIEF DESCRIPTION OF DRAWINGS

[0021] In order to more clearly illustrate the technical scheme of the embodiments of the application, the following will briefly introduce the drawings needed in the embodiments. Obviously, the drawings in the following description are some embodiments of the application, and those skilled in the art can also obtain other drawings according to these drawings without creating any creative labor.

[0022] Fig. 1 is a structural schematic view of an embodiment of the atomizing core provided by the application;

[0023] Fig. 2 is an exploded view of the first embodiment of the atomizing core provided by the application;

[0024] Fig. 3 is a top view of an embodiment of the atomizing core provided by the application;

[0025] Fig. 4 is a sectional view of E-E in Fig. 3;

[0026] Fig. 5 is an exploded view of the second embodiment of the atomizing core provided by the application;

[0027] Fig. 6 is a structural schematic view of an embodiment of the atomizer provided by the application;

[0028] FIG. 7 is a structural schematic diagram of an embodiment of an electronic atomization device provided by the present application.

[0029] BRIEF DESCRIPTION OF DRAWINGS

[0030] 1, atomization core; 10, semiconductor substrate; 10A, liquid absorption surface; 10B, atomization surface; 11, first liquid guide through hole; 12, sink; 121, limiting area; 122, opening; 13, non-porous area; 20, semiconductor heating layer; 21, second liquid guide through hole; 30, electrode; 40, substrate; 41, third liquid guide through hole;

[0031] D1, first direction; D2, second direction; L1 / L2 / L3 / L4, length; W, width; 100, atomizer; 2, liquid storage cavity; 300, electronic atomization device; 200, battery assembly. DETAILED DESCRIPTION

[0032] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described below in a clear and complete manner with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some but not all of the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0033] In the related art, an atomization core includes a heating element and a liquid guide element. The atomization core is mostly a cotton core or a ceramic core. The liquid guide element is a ceramic material or a cotton material, where the cotton includes but is not limited to pure cotton fiber, linen material, etc. The heating element is a metal material such as a printed film, a metal mesh, a spring wire, etc. Such an atomization core has the following several pain points:

[0034] 1. There is a risk that the heating element and the liquid guide element are not tightly fitted. The thick film printing of the ceramic has a risk of falling off due to poor adhesion. The heating element may also not be tightly fitted with the cotton core during assembly. The tight fitting of the liquid guide element and the heating element will cause dry burning, thereby affecting the user experience and safety.

[0035] 2. The cotton core and the ceramic are porous medium structures, and the inner holes are disordered. The cotton core is relatively soft and is prone to deformation during assembly. Different incoming materials and different compression degrees will cause the cotton core to have different pore sizes, affecting the safety, taste, and atomization state of the electronic atomization device. Although the porous ceramic has relatively fixed pore sizes, there are still large pores, small pores, or blind holes inside. These abnormal pores will cause the atomization core to have problems such as carbon deposition and core clogging, affecting the safety of the electronic atomization device and the user experience.

[0036] 3. Current heating elements are all metals or substances with metal as the main component. During the soaking or atomization of tobacco tar, chemical or electrochemical corrosion is easy to occur, leading to the precipitation of heavy metals, and thus affecting the safety of electronic atomization devices.

[0037] 4. The current porous medium atomization core may have problems such as adsorption of essence and spices, resulting in poor taste restoration. In addition, long-term accumulation of essence, spices, and macromolecular sweeteners may also reduce the service life of the atomization core, causing problems such as carbon deposition and excessive aldehyde and ketone in the atomization core.

[0038] Please refer to FIGS. 1-4. FIG. 1 is a structural schematic diagram of an embodiment of the atomization core provided by the present application. FIG. 2 is an exploded view of the first embodiment of the atomization core provided by the present application. FIG. 3 is a top view of the structural schematic diagram of an embodiment of the atomization core provided by the present application. FIG. 4 is a cross-sectional structural schematic diagram of E-E in FIG. 3.

[0039] The embodiments of the present application disclose an atomization core 1, an atomizer 100, and an electronic atomization device 300. First, the atomization core 1 disclosed by the present application will be described in detail.

[0040] The present application discloses an atomization core 1. The atomization core 1 comprises a semiconductor substrate 10, a semiconductor heating layer 20, and an electrode 30. The semiconductor substrate 10 has opposite liquid suction surfaces 10A and atomization surfaces 10B. The semiconductor substrate 10 has a plurality of first liquid guide through holes 11 that penetrate from the liquid suction surface 10A to the atomization surface 10B, and the first liquid guide through holes 11 are used to conduct the atomization substrate. The semiconductor heating layer 20 is arranged on the atomization surface 10B and has a plurality of second liquid guide through holes 21. The second liquid guide through holes 21 are arranged in one-to-one correspondence with the first liquid guide through holes 11 and are in communication. The electrode 30 is at least partially arranged on the atomization surface 10B and is electrically connected with the semiconductor heating layer 20.

[0041] The semiconductor substrate 10 in the present application plays a role of guiding liquid in the atomization core 1. Compared with the traditional ceramic liquid guide, the semiconductor substrate 10 uses the MEMS (Micro-Electro-Mechanical Systems) processing technology to obtain the first liquid guide through holes 11. The first liquid guide through holes 11 are orderly arranged, the pores are fixed and straight, which is conducive to the transmission of the atomization substrate, ensures high transmission efficiency, and good taste restoration. Secondly, the semiconductor heating layer 20 replaces the traditional metal heating element. The semiconductor material is doped by using semiconductor technology to make it have conductivity. During atomization, the problem of metal corrosion can be avoided, so that the heavy metals can be greatly reduced or even eliminated, and thus the safety can be improved. In addition, the arrangement of the second liquid guide through holes 21 facilitates the uniform distribution of the atomization substrate in the semiconductor heating layer 20, which is conducive to improving the consistency of heating.

[0042] The semiconductor substrate 10 can be used as a conduction structure and a storage structure for conducting the atomized substrate to the semiconductor heating layer 20. The semiconductor heating layer 20 is used for heating the atomized substrate to generate aerosol.

[0043] In some embodiments, the semiconductor substrate 10 is an intrinsic silicon substrate, and the semiconductor heating layer 20 is a doped conductive silicon layer or a doped non-silicon semiconductor layer. The thickness of the semiconductor heating layer 20 is less than the thickness of the semiconductor substrate 10 and is less than or equal to 10 microns. The semiconductor heating layer 20 is relatively thin, so that the second liquid conducting through hole 21 is relatively short, and there is almost no space to store the atomized substrate, so that the atomized substrate conducted from the semiconductor substrate 10 to the semiconductor heating layer 20 can be directly heated and atomized each time, without being cyclically heated, thereby ensuring the consistency and freshness of the aerosol taste.

[0044] In some embodiments, the semiconductor substrate 10 can be one of a germanium, gallium arsenide, gallium nitride, silicon carbide, etc. The semiconductor heating layer 20 is an electrocaloric material made of a semiconductor substrate doped with metal atoms. In addition, the semiconductor substrate 10 can also be replaced by a conductive ceramic or conductive glass.

[0045] In some embodiments, the semiconductor heating layer 20 can be an electrocaloric material made of a single crystal silicon or polycrystalline silicon substrate doped with metal atoms. The doped metal atoms include one or more of copper atoms, zinc atoms, manganese atoms, aluminum atoms, gallium atoms, and antimony atoms, but are not limited thereto.

[0046] In other embodiments, the semiconductor heating layer 20 can be an electrocaloric material made of a single crystal silicon or polycrystalline silicon substrate doped with non-metal atoms. The doped non-metal atoms include one or more of phosphorus, arsenic, and boron, but are not limited thereto.

[0047] The resistivity of the semiconductor heating layer 20 is less than the resistivity of the semiconductor substrate 10, so that the semiconductor heating layer 20 has better heating efficiency. The resistivity of the semiconductor heating layer 20 and the semiconductor substrate 10 is not limited herein and can be selected according to actual needs.

[0048] The semiconductor substrate 10 has two opposite surfaces in the thickness direction, which are an atomization surface 10B and a liquid absorption surface 10A. The liquid absorption surface 10A serves as an input surface for the atomized substrate. Due to the relatively thin semiconductor heating layer 20, the atomization surface 10B can also be regarded as an output surface for the aerosol.

[0049] The cross section of the semiconductor substrate 10 can be rectangular, circular, parallelogram, irregular polygon, etc.

[0050] In this embodiment, the semiconductor substrate 10 is taken as a cuboid for illustration. That is, the cross section of the semiconductor substrate 10 is rectangular.

[0051] The shape of the semiconductor substrate 10 is not limited to a cuboid, and the external structure thereof can be designed into other shapes according to the structural assembly requirements, for example, a cube, a cylinder, a prismatic body with rounded corners, and the like.

[0052] The first liquid guiding through hole 11 can serve as a liquid guiding structure and a storage structure of the atomization substrate, and is used to guide the atomization substrate on the liquid absorbing surface 10A to the atomization surface 10B.

[0053] The cross section of the first liquid guiding through hole 11 can be designed into a circular shape, a square shape, a triangular shape, or an irregular polygonal shape, and the like.

[0054] In the embodiment, the cross section of the first liquid guiding through hole 11 is circular, and the first liquid guiding through holes 11 are arranged in an array.

[0055] The plurality of first liquid guiding through holes 11 can adopt other arrangement modes such as a radial arrangement, and are not limited to the above embodiment.

[0056] The first liquid guiding through hole 11 and the second liquid guiding through hole 21 are both prepared by using the MEMS processing technology. By using the MEMS processing technology, the uniformity of the plurality of first liquid guiding through holes 11 in the semiconductor substrate 10 can be better, and the occurrence of abnormal holes can be effectively avoided. Secondly, the first liquid guiding through hole 11 and the second liquid guiding through hole are both ordered holes, and the fixed hole diameter can avoid problems such as the occurrence of carbon deposition and the like. In addition, the semiconductor substrate 10 has better hardness than a cotton core, and the hole diameter of the first liquid guiding through hole 11 is not easy to deform in the assembly process, so that the consistency of the first liquid guiding through hole 11 is better, which is conducive to improving the safety, taste, and atomization state of the atomization core 1.

[0057] In some embodiments, the first liquid guiding through hole 11 and the second liquid guiding through hole 21 are both straight through holes, and the hole diameter of the straight through hole is 5 microns to 100 microns. For example, the hole diameter of the straight through hole can be 5 microns, 10 microns, 15 microns, 20 microns, 30 microns, 40 microns, 50 microns, 60 microns, 70 microns, 80 microns, 90 microns, 100 microns, and the like. The manufacturing process of the straight through hole is relatively simple, and batch production is easy to realize. Secondly, the flow path of the atomization substrate in the straight through hole is simple and direct, which reduces the flow resistance and residence time thereof, and is helpful to improve the liquid guiding efficiency.

[0058] The hole diameters of the first liquid guiding through hole 11 and the second liquid guiding through hole 21 can be the same or different.

[0059] In a preferred embodiment, the second liquid guide through hole 21 has a smaller diameter than the first liquid guide through hole 11, so that the atomized substrate in the first liquid guide through hole 11 can flow smoothly into the second liquid guide through hole 21, ensuring smooth supply of the atomized substrate and preventing clogging of the first liquid guide through hole 11; at the same time, it can also avoid storing atomized substrate in the second liquid guide through hole 21 to affect the taste of aerosol, and make the aerosol atomized from the second liquid guide through hole 21 more delicate.

[0060] In other embodiments, the second liquid guide through hole 21 can have a larger diameter than the first liquid guide through hole 11.

[0061] In a preferred embodiment, the diameter of the through hole is 10-50 microns.

[0062] The semiconductor heating layer 20 is arranged in close contact with the atomization surface 10B to avoid dry burning of the semiconductor heating layer 20, thereby affecting the use experience and safety.

[0063] In some embodiments, a sink 12 is formed on the atomization surface 10B of the semiconductor substrate 10. The semiconductor heating layer 20 is a doped semiconductor substrate, which is embedded in the sink 12 and arranged in contact with the bottom wall of the sink 12. The second liquid guide through hole 21 penetrates the doped semiconductor substrate.

[0064] The semiconductor substrate 10 and the semiconductor heating layer 20 can be connected by bonding, adhesion, and lamination, etc.

[0065] In some embodiments, since both the semiconductor substrate 10 and the semiconductor heating layer 20 use semiconductor materials, they have better interface compatibility and better bonding consistency, which can further reduce dry burning and improve the use experience and safety.

[0066] In some embodiments, there is a gap between the side surface of the sink 12 and the side surface of the doped semiconductor substrate, and the gap is filled with a bonding material, so that the semiconductor heating layer 20 can be bonded not only to the bottom wall of the sink 12 but also to the side wall of the sink 12, to better fix the semiconductor heating layer 20 to the atomization surface 10B of the semiconductor substrate 10, avoid dry burning, and facilitate installation of the semiconductor heating layer 20 in the sink 12.

[0067] In some embodiments, the depth of the sink 12 is equal to the thickness of the doped semiconductor substrate, to ensure that the semiconductor substrate is flush with the surface of the semiconductor substrate 10, with better flatness, and to facilitate subsequent installation of the electrode 30 on the surface of the semiconductor heating layer 20 and the atomization surface 10B.

[0068] In other embodiments, the depth of the sink 12 can be less than or greater than the thickness of the doped semiconductor substrate, as desired. There can also be no gap between the sides of the sink 12 and the sides of the doped semiconductor substrate.

[0069] In one embodiment, the sink 12 is open at both ends 122 in the first direction D1. The sink 12 is enclosed by side walls on both sides in the second direction D2 to form a limiting area 121. The first direction D1 intersects the second direction D2. The shape and size of the doped semiconductor substrate are adapted to the shape and size of the sink 12.

[0070] The sink 12 is open at both ends 122 in the first direction D1, which can reduce the alignment requirements and facilitate the installation of the semiconductor heating layer 20 in the sink 12. The limiting area 121 can limit the semiconductor heating layer 20 in the first direction D1, which facilitates the fixation of the semiconductor heating layer 20 in the sink 12.

[0071] The shape and size of the doped semiconductor substrate are adapted to the shape and size of the sink 12, that is, the semiconductor heating layer 20 has the same shape and size as the space enclosed by the sink 12.

[0072] It should be understood that, for ease of assembly, the size of the semiconductor heating layer 20 can be slightly smaller than the size of the space enclosed by the sink 12.

[0073] In some embodiments, the limiting area 121 of the semiconductor substrate 10 and the portion of the doped semiconductor substrate located in the limiting area 121 are non-porous areas 13. The first liquid guide through hole 11 is only provided in the sink 12 area. The number of electrodes 30 is two, which are arranged on opposite sides of the atomization surface 10B in the second direction D2. Part of each electrode 30 is arranged on the surface of the semiconductor substrate 10, and part of each electrode 30 is arranged on the surface of the non-porous area 13 of the doped semiconductor substrate.

[0074] It should be noted that the non-porous area 13 of the present application does not provide the first liquid guide through hole 11 and the second liquid guide through hole 21. The first liquid guide through hole 11 is provided in the area of the sink 12 other than the limiting area 121. That is, the semiconductor substrate 10 is not fully porous. In addition, the semiconductor heating layer 20 is not fully porous, and the portion located in the non-porous area 13 does not provide the second liquid guide through hole 21.

[0075] The electrode 30 is partially arranged on the surface of the non-porous area 13 to avoid covering the second liquid guide through hole 21 and blocking the aerosol.

[0076] In some embodiments, the first direction D1 is perpendicular to the second direction D2. The size of the semiconductor substrate 10 in the second direction D2 is greater than the size in the first direction D1. The width of the sink 12 in the second direction D2 is greater than the width in the first direction D1.

[0077] In some embodiments, the semiconductor substrate 10 is a cuboid with a rectangular cross section, the length L1 of the semiconductor substrate 10 is 2-9 mm, the width W of the semiconductor substrate 10 is 1-6 mm, and the thickness of the semiconductor substrate 10 is not greater than 0.8 mm.

[0078] In a specific embodiment, the semiconductor substrate 10 is a cuboid with a rectangular cross section, the long side direction of the rectangle is the second direction D2, the short side direction of the rectangle is the first direction D1, the length L1 of the semiconductor substrate 10 is 4.7 mm, and the width W1 of the semiconductor substrate 10 is 3 mm. The cross section of the semiconductor heating layer 20 is a symmetrical octagon, the octagon has two side edges arranged in parallel along the first direction D1, and the length L2 of the two side edges is 3.3 mm. The cross section of each electrode 30 is a rectangle, and the size of the two electrodes 30 is the same, the long side length L3 of the rectangle along the first direction D1 is 2 mm, and the short side length L4 of the rectangle along the second direction D2 is 0.7 mm. The distance between the two electrodes 30 is 3.3 mm. In the thickness direction, one side surface of the electrode 30 is arranged in alignment with one side surface of the semiconductor substrate 10, and the side surface of the semiconductor heating layer 20 along the first direction D1 is arranged in alignment with the side surface of the semiconductor substrate 10 along the first direction D1.

[0079] In other embodiments, the semiconductor substrate 10, the semiconductor heating layer 20, and the electrode 30 can have other sizes, which can be selected according to actual needs.

[0080] Part of each electrode 30 is arranged on the surface of the semiconductor substrate 10 to reserve a contact area on the electrode 30, the contact area is projected on the surface of the semiconductor substrate 10 but not on the surface of the semiconductor heating layer 20. By connecting the contact area with an external power supply, the influence of thermal stress is reduced and the service life of the electrode 30 is prolonged.

[0081] The electrode 30 is a metal material, which includes but is not limited to silver, gold, nickel, aluminum, and other high-conductivity materials. The electrode 30 can be made separately or plated on the semiconductor substrate 10 as a whole.

[0082] The semiconductor substrate 10, the semiconductor heating layer 20, and the electrode 30 have a laminated structure, which can be processed and packaged by using a semiconductor process to achieve modular production.

[0083] In some embodiments, the atomization core 1 further comprises a substrate 40 disposed on the liquid absorbing surface 10A. The substrate 40 comprises a glass substrate, a quartz substrate, or a dense ceramic substrate. The substrate 40 has a plurality of third liquid conducting through holes 41 disposed in alignment with and communicating with the second liquid conducting through holes 21. The third liquid conducting through holes 41 have a hole diameter greater than or equal to the hole diameter of the second liquid conducting through holes 21 and greater than or equal to the hole diameter of the first liquid conducting through holes 11, so as to facilitate the third liquid conducting through holes 41 to conduct the atomization substrate to the second liquid conducting through holes 21.

[0084] The substrate 40 serves as a flow guiding structure and a storage structure for conducting the atomization substrate to the semiconductor substrate 10. The substrate 40 can also serve as a support for the semiconductor substrate 10.

[0085] In some embodiments, the third liquid conducting through holes 41 have a hole diameter less than or equal to 100 microns.

[0086] Referring to FIG. 1, FIG. 3, and FIG. 5, FIG. 5 is an exploded view of a second embodiment of the atomization core provided by the present application.

[0087] The second embodiment of the atomization core 1 provided by the present application has a similar structure to the first embodiment of the atomization core 1 provided by the present application, except that the semiconductor substrate 10 and the semiconductor heating layer 20 are an integral structure.

[0088] In some embodiments, the semiconductor substrate 10 is an intrinsic semiconductor substrate 10. The semiconductor heating layer 20 is formed by locally doping on the atomization surface 10B of the intrinsic semiconductor substrate 10. The thickness of the semiconductor heating layer 20 is less than the thickness of the intrinsic semiconductor substrate 10. The semiconductor substrate 10 and the semiconductor heating layer 20 are an integral structure formed by one-step molding, which can reduce assembly; and there is no need to process a metal conductive element pattern on the surface of the substrate as a heating element, which can avoid the heating element on the surface of the substrate from falling off due to poor adhesion.

[0089] The first liquid conducting through hole 11 and the aligned second liquid conducting through hole 21 are different hole sections of the same through hole of the intrinsic semiconductor substrate 10, which can simplify the preparation process of the liquid conducting through hole and reduce the alignment requirement of the first liquid conducting through hole 11 and the second liquid conducting through hole 21. The first liquid conducting through hole 11 and the second liquid conducting through hole 21 have the same hole diameter.

[0090] The thickness of the semiconductor heating layer 20 is less than the thickness of the intrinsic semiconductor substrate 10, so as to retain the liquid guiding and storing effect of the intrinsic semiconductor substrate 10, and avoid the whole semiconductor substrate 10 being doped into the semiconductor heating layer 20. It should be understood that the whole semiconductor substrate 10 forms the semiconductor heating layer 20, and the semiconductor substrate 10 has a certain thickness, so that the semiconductor heating layer 20 has a liquid storing effect, which causes the atomized substrate in the semiconductor heating layer 20 to be repeatedly heated, affecting the taste of the aerosol. If the semiconductor heating layer 20 is directly communicated with the liquid storage cavity 2 (see FIG. 5) storing the atomized substrate, the cavity explosion phenomenon will also occur.

[0091] The semiconductor heating layer 20 is directly doped on the intrinsic semiconductor substrate 10, and the dry heating phenomenon of the semiconductor heating layer 20 does not exist.

[0092] Please refer to FIG. 6, which is a structural schematic diagram of an embodiment of the atomizer provided in the present application.

[0093] The present application provides an atomizer 100. The atomizer 100 comprises a liquid storage cavity 2 and the above-mentioned atomizer core 1.

[0094] The liquid storage cavity 2 is used for storing the atomized substrate, and is communicated with the atomizer core 1. The liquid storage cavity 2 is communicated with the second liquid guiding through hole of the semiconductor substrate.

[0095] In the embodiment, the atomizer core 1 is arranged below the liquid storage cavity 2, and is horizontally arranged.

[0096] The atomizer core 1 can also be vertically arranged, or arranged obliquely. For example, the atomizer core 1 can be arranged at a certain angle with the horizontal plane, or can also be arranged at a certain angle with the circumference of the atomizer 100. That is, the present application does not limit the arrangement angle of the atomizer core 1.

[0097] In other embodiments, the atomizer core 1 can also be arranged on the side of the liquid storage cavity 2, and can also be partially embedded in the liquid storage cavity 2. That is, the atomizer core 1 and the liquid storage cavity 2 can also be arranged in other ways, which are not limited herein, and can be selected according to actual assembly requirements.

[0098] Please refer to FIG. 7, which is a structural schematic diagram of an embodiment of the electronic atomization device provided in the present application.

[0099] The present application provides an electronic atomization device 300. The electronic atomization device 300 comprises a battery assembly 200 and the above-mentioned atomizer 100. The battery assembly 200 is used for supplying power to the atomizer 100, so as to work the atomizer 100. The battery assembly 200 is electrically connected with the electrode, so as to form a path between the electrode and the semiconductor heating layer, so that the semiconductor heating layer generates Joule heat as a resistor.

[0100] The electronic atomization device 300 can further include a shell, a suction nozzle, a microphone, and the like, which are not described in detail herein. Detailed structural features of the electronic atomization device 300 are within the understanding of those skilled in the art and are not described herein. The structure of the electronic atomization device 300 can be various structures and forms, as long as the atomization core structure in the embodiments of the present application is utilized, which should be included in the protection scope of the present application.

[0101] The device embodiments described above are merely illustrative, wherein the units described as separate components can or can not be physically separate, and the components shown as units can or can not be physical units, i.e., can be located in one place, or can be distributed on multiple network units. Part or all of the modules can be selected to achieve the purpose of the embodiments according to actual needs. Those skilled in the art can understand and implement without creative labor.

[0102] As used herein, "one embodiment", "an embodiment", or "one or more embodiments" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the application. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment.

[0103] In the specification provided herein, a large number of specific details are described. However, it can be understood that the embodiments of the present application can be practiced without these specific details. In some instances, well-known methods, structures and techniques are not described in detail in order not to obscure the understanding of the specification.

[0104] In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The application can be implemented by means of both hardware and software, and any combination thereof. In a unit claim, several elements can be presented in a dependent manner, meaning that any of these elements can be present on their own in one implementation or several elements can be present in a same item. The use of the words first, second and third does not indicate any order. These words are to be interpreted as names.

[0105] Finally, it should be noted that the above embodiments are merely used to illustrate the technical solutions of the present application, rather than limiting the technical solutions of the present application; even though the technical solutions of the present application have been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can be made to the technical solutions recorded in the foregoing embodiments, or equivalent replacements can be made to part of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. An atomizing core, wherein, The application relates to an atomizing core. The atomizing core comprises: a semiconductor substrate having opposite liquid absorption surface and atomization surface; the semiconductor substrate has a plurality of first liquid conducting through holes penetrating from the liquid absorption surface to the atomization surface, and the first liquid conducting through holes are used for conducting an atomization substrate; a semiconductor heating layer arranged on the atomization surface and having a plurality of second liquid conducting through holes; the second liquid conducting through holes are arranged in one-to-one correspondence with the first liquid conducting through holes and are communicated with the first liquid conducting through holes; 2. The atomizer wick of claim 1, wherein, an electrode arranged at least partially on the atomization surface and electrically connected with the semiconductor heating layer.

3. The atomizer wick of claim 2, wherein, The atomization surface of the semiconductor substrate is provided with a sink; the semiconductor heating layer is a doped semiconductor substrate, the doped semiconductor substrate is embedded in the sink and is arranged in contact with the bottom wall of the sink; and the second liquid conducting through holes penetrate the doped semiconductor substrate. The sink is open at both ends along a first direction; the sink is provided with limiting areas formed by the side walls along a second direction; and the first direction intersects with the second direction.

4. The atomizer core of claim 3, wherein, The shape and size of the doped semiconductor substrate are matched with the shape and size of the sink.

5. The atomizer wick of claim 1, wherein, The limiting area of the semiconductor substrate and the part of the doped semiconductor substrate located in the limiting area are non-penetrating areas; the first liquid conducting through holes are arranged only in the sink area; the number of the electrodes is two, and the electrodes are arranged on opposite sides of the atomization surface along the second direction; part of each electrode is arranged on the surface of the semiconductor substrate, and part of each electrode is arranged on the surface of the non-penetrating area of the doped semiconductor substrate. The semiconductor substrate is an intrinsic semiconductor substrate; the semiconductor heating layer is formed by locally doping the atomization surface of the intrinsic semiconductor substrate; and the thickness of the semiconductor heating layer is smaller than the thickness of the intrinsic semiconductor substrate.

6. The atomizer wick of any one of claims 1-4, wherein, The first liquid conducting through hole and the corresponding second liquid conducting through hole are different hole sections of the same through hole of the intrinsic semiconductor substrate.

7. The atomizer wick of claim 6, wherein, The semiconductor substrate is an intrinsic silicon substrate, the semiconductor heating layer is a doped conductive silicon layer or a doped non-silicon semiconductor layer; the thickness of the semiconductor heating layer is smaller than the thickness of the semiconductor substrate and is less than or equal to 10 microns.

8. The atomizer wick of any one of claims 1-4, wherein, The resistivity of the semiconductor heating layer is smaller than the resistivity of the semiconductor substrate.

9. The atomizer wick of any one of claims 1-4, wherein, The first liquid conducting through hole and the second liquid conducting through hole are straight through holes; and the aperture of the straight through hole is 5 microns to 100 microns.

10. The atomizer core of claim 9, wherein, The atomizing core further comprises a substrate arranged on the liquid absorption surface; the substrate comprises a glass substrate, a quartz substrate or a dense ceramic substrate; the substrate has a plurality of third liquid conducting through holes arranged in one-to-one correspondence with the second liquid conducting through holes and communicated with the second liquid conducting through holes; the aperture of the third liquid conducting through hole is greater than or equal to the aperture of the second liquid conducting through hole and greater than or equal to the aperture of the first liquid conducting through hole.

11. An atomiser, wherein, The aperture of the third liquid conducting through hole is less than or equal to 100 microns. The application further relates to an atomizer comprising a battery assembly and the atomizing core.

12. An electronic atomizing device, wherein, The storage cavity is used for storing an atomization substrate and is communicated with the atomizing core.

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