Atomization core and electronic atomization device

Abstract

The present application provides an atomization core and an electronic atomization device. The provision of second liquid guiding through holes facilitates uniform distribution of an atomization substrate within a semiconductor heating layer, which is beneficial to improving the heating uniformity. The semiconductor heating layer is designed with a hollowed-out structure, so that the heating area is reduced without reducing a border size of the entire semiconductor heating layer, and thus heating is more concentrated to achieve a better atomization temperature, thereby improving taste and the aerosol amount.

Description

Atomizing core and electronic atomizing device

[0001] Cross-reference to related applications

[0002] This application claims priority to Chinese patent application 202422241907.9, filed on September 12, 2024, the entire contents of which are incorporated herein by reference. TECHNICAL FIELD

[0003] The present application relates to the field of electronic atomization, in particular to an atomizing core and an electronic atomizing device. BACKGROUND

[0004] The atomizing core generally comprises a heating element and a liquid guiding element.

[0005] The conventional sheet-shaped heating element, generally, when atomizing, heat will spread to cover the entire heating element, causing the temperature of the entire heating element to be basically consistent, making it difficult to achieve a good atomizing temperature, thereby making it difficult to achieve a good aerosol amount and taste. SUMMARY

[0006] The present application provides an atomizing core and an electronic atomizing device to solve the problem of how to improve the atomizing performance of the atomizing core.

[0007] To solve the above technical problems, the first technical solution provided by the present application is to provide an atomizing core, comprising:

[0008] A semiconductor substrate having opposite liquid absorbing surfaces and atomizing surfaces; the semiconductor substrate has a plurality of first liquid guiding through holes penetrating from the liquid absorbing surface to the atomizing surface, and the first liquid guiding through holes are used for conducting the atomizing substrate;

[0009] A semiconductor heating layer disposed on the atomizing surface and having a plurality of second liquid guiding through holes; the second liquid guiding through holes are in communication with the first liquid guiding through holes; and the semiconductor heating layer has a plurality of hollow parts;

[0010] An electrode at least partially disposed on the atomizing surface and electrically connected to the semiconductor heating layer.

[0011] The semiconductor substrate has a plurality of openings, and the hollow parts are one-to-one aligned and communicated with the openings; and the hollow parts and the openings are overlapped in the thickness direction of the semiconductor substrate.

[0012] The semiconductor substrate has a plurality of openings, and the hollow parts are one-to-one aligned and communicated with the openings; and the hollow parts and the openings are overlapped in the thickness direction of the semiconductor substrate.

[0013] The opening is a through slot, and the through slot penetrates the liquid absorbing surface and the atomizing surface; and the second liquid guiding through hole and the first liquid guiding through hole are one-to-one aligned and communicated.

[0014] Or,

[0015] The opening is a blind groove, and the blind groove is communicated with the atomization surface; the number of the second liquid guiding through holes is less than the number of the first liquid guiding through holes, and each opening is respectively communicated with a plurality of first liquid guiding through holes.

[0016] The semiconductor heating layer has a resistivity less than that of the semiconductor substrate; the semiconductor heating layer comprises a frame region and a mesh region, the frame region is arranged around the mesh region and connected with the mesh region; the mesh region comprises a plurality of strip-shaped heating portions, the strip-shaped heating portions are longitudinally and transversely staggered to define a plurality of hollow portions, and the second liquid guiding through hole is at least formed in the mesh region and penetrates the strip-shaped heating portions.

[0017] The semiconductor substrate is provided with a sink groove on the atomization surface; the semiconductor heating layer is a doped semiconductor substrate, the doped semiconductor substrate is embedded in the sink groove and arranged in contact with the bottom wall of the sink groove; the second liquid guiding through hole penetrates the doped semiconductor substrate; and the opening is communicated with the bottom wall of the sink groove.

[0018] The sink groove is open at both ends along a first direction; the sink groove is surrounded by two side walls along a second direction to form a limiting region; and the first direction and the second direction are arranged intersectingly.

[0019] The shape and size of the doped semiconductor substrate are adapted to those of the sink groove.

[0020] The semiconductor substrate is an intrinsic semiconductor substrate; the semiconductor heating layer is formed by locally doping the atomization surface of the intrinsic semiconductor substrate; and the thickness of the semiconductor heating layer is less than that of the intrinsic semiconductor substrate.

[0021] The first liquid guiding through hole and the corresponding second liquid guiding through hole are different hole segments of the same through hole of the intrinsic semiconductor substrate.

[0022] The hollow portion and the corresponding opening are different hole segments of the same through hole of the intrinsic semiconductor substrate.

[0023] The distance from the surface of the semiconductor heating layer close to the liquid absorbing surface to the liquid absorbing surface is less than or equal to 0.5 mm.

[0024] The thickness of the semiconductor substrate is less than or equal to 1 mm.

[0025] The first liquid guiding through hole and the second liquid guiding through hole are straight through holes; and the aperture of the straight through hole is 5-100 microns.

[0026] The atomization core further comprises a substrate, and the substrate is arranged on the liquid absorbing surface; the substrate comprises a glass substrate, a quartz substrate or a dense ceramic substrate.

[0027] The substrate has a plurality of third liquid guiding through holes, the number of the third liquid guiding through holes is greater than or equal to the number of the second liquid guiding through holes, and one second liquid guiding through hole is only aligned with and communicated with one third liquid guiding through hole.

[0028] The third liquid guiding through hole has a hole diameter greater than or equal to the hole diameter of the second liquid guiding through hole and greater than or equal to the hole diameter of the first liquid guiding through hole, and the hole diameter of the third liquid guiding through hole is less than or equal to 100 microns.

[0029] To solve the above technical problems, a second technical solution provided by the application is to provide an electronic atomization device, which comprises a liquid storage cavity and the atomization core described above.

[0030] The liquid storage cavity is used for storing an atomization substrate and is in communication with the atomization core.

[0031] The semiconductor substrate in the application plays a role of guiding liquid in the atomization core. Compared with a traditional ceramic liquid guiding piece, the semiconductor substrate uses a MEMS processing technology to obtain the first liquid guiding through hole. The first liquid guiding through hole is orderly, the pore is relatively fixed and straight, which is conducive to the transmission of the atomization substrate, ensures high transmission efficiency and good taste restoration. Secondly, the semiconductor heating layer replaces the traditional metal heating piece. The semiconductor material is doped to have conductivity by using semiconductor technology, which can avoid metal corrosion and other problems during atomization, so as to greatly reduce or even eliminate heavy metals and improve safety. The second liquid guiding through hole is arranged to facilitate the uniform distribution of the atomization substrate in the semiconductor heating layer, which is conducive to improving the consistency of heating. In addition, the semiconductor heating layer is designed to be hollow. Without reducing the frame size of the whole semiconductor heating layer, the heating area is reduced, the heating is more concentrated, the atomization temperature is better, and the taste and aerosol amount are improved. BRIEF DESCRIPTION OF DRAWINGS

[0032] To more clearly illustrate the technical solutions in the embodiments of the application, the following will briefly introduce the drawings needed to be used in the embodiment description. Obviously, the drawings in the following description are only some embodiments of the application, and other drawings can be obtained by those skilled in the art without any creative labor.

[0033] FIG. 1 is a structural schematic diagram of an embodiment of the atomization core provided by the application;

[0034] FIG. 2 is an exploded structural schematic diagram of an embodiment of the atomization core provided by the application;

[0035] FIG. 3 is a top view structural schematic diagram of an embodiment of the atomization core provided by the application;

[0036] FIG. 4 is a cross-sectional structural schematic diagram of an embodiment of the atomization core provided by the application;

[0037] FIG. 5 is a local enlarged structural schematic diagram of E in FIG. 4;

[0038] FIG. 6 is an exploded structural schematic diagram of another embodiment of the atomization core provided by the application;

[0039] Fig. 7 is a top view of another embodiment of an atomization core provided by the present application;

[0040] Fig. 8 is a cross-sectional view of another embodiment of an atomization core provided by the present application;

[0041] Fig. 9 is an enlarged view of a portion of Fig. 8;

[0042] Fig. 10 is a structural schematic of an embodiment of an electronic atomization device provided by the present application;

[0043] Fig. 11 is a structural schematic of another embodiment of an electronic atomization device provided by the present application.

[0044] Brief Description of the Drawings: 1, atomization core; 10, semiconductor substrate; 10A, liquid absorption surface; 10B, atomization surface; 11, first liquid guide through hole; 12, sink; 121, limiting area; 122, opening; 13, non-perforated area; 14, opening; 20, semiconductor heating layer; 21, second liquid guide through hole; 22, frame area; 23, mesh area; 231, strip-shaped heating portion; 232, hollow portion; 30, electrode; 40, substrate; 41, third liquid guide through hole; D1, first direction; D2, second direction; 100, atomizer; 2, liquid storage cavity; 300, electronic atomization device; 200, battery assembly. DETAILED DESCRIPTION

[0045] The technical solutions of the embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0046] In the following description, specific details are set forth in order to provide a thorough understanding of the present application. However, persons having ordinary skill in the art will appreciate that the present application can be practiced without some or all of the specific details.

[0047] The technical solutions of the embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0048] The terms "first", "second", "third" in the present application are only for descriptive purpose, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second", "third" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise explicitly and specifically limited. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present application are only used to explain the relative position relationship, movement condition, etc. between the components, and if the specific posture changes, the directional indications will also change accordingly. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device including a series of steps or units is not limited to the listed steps or units, but can optionally include steps or units not listed, or can optionally include other steps or units inherent to the process, method, product or device.

[0049] Reference herein to "embodiment" means that the particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearance of the phrase in various places in the specification is not necessarily all referring to the same embodiment, nor is it necessarily referring to a separate or alternative embodiment to the other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with each other.

[0050] In the related art, the atomization core includes a heating element and a liquid guiding element. The atomization core is generally a cotton core or a ceramic core. The liquid guiding element is a ceramic material or a cotton material, and the cotton herein includes but is not limited to pure cotton fiber, linen material, etc. The heating element is a printed thick film, a thin film, or a metal mesh, a spring wire, etc. Such an atomization core has the following problems:

[0051] 1. There is a risk that the heating element and the liquid guiding element are not tightly fitted. The thick film printing of the ceramic has a risk of falling off due to poor adhesion. The heating element may also not be tightly fitted with the cotton core during assembly. The poor fit between the liquid guiding element and the heating element will cause dry burning, thereby affecting the use experience and safety.

[0052] 2. The cotton core and the ceramic are porous medium structures, and the inner holes are disordered. The cotton core is relatively soft and is prone to deformation during assembly. Different raw materials and different compression degrees will result in different pore sizes, and will also affect safety, taste, atomization state, and consistency. Although the pore size of the porous ceramic is relatively fixed, there are still large pores or small pores inside, and there are also many blind holes. These abnormal pores will cause problems such as carbon deposition and paste core, affecting safety and use experience.

[0053] 3. Current heating elements are all metals or substances with metal as the main component. During the soaking or atomization of tobacco tar, chemical corrosion or electrochemical corrosion is easy to occur, leading to the precipitation of heavy metals, and further affecting safety.

[0054] 4. The porous medium atomization core currently has problems such as adsorption of flavors and fragrances, resulting in poor taste restoration. In addition, long-term accumulation of flavors and fragrances or macromolecular sweeteners can also reduce the service life of the atomization core, causing problems such as carbon deposition or excessive aldehydes and ketones.

[0055] In related technologies, when the heating element is a whole piece of silicon-based material, such an atomization core has the following problems:

[0056] 1. Due to the high thermal conductivity of silicon-based materials, the temperature of the whole piece of silicon-based heating element will generally tend to be uniform during atomization. If the heating area is too large, the heat will also spread to the entire heating element, making it difficult to achieve a good atomization temperature, thereby making it difficult to achieve a good aerosol amount and taste. If the temperature of the heating element is uniform and there is no temperature gradient, the taste cannot be guaranteed to be good.

[0057] 2. If the silicon-based heating element is made small to avoid the problem of excessive heating area, the structure is difficult to seal, therefore, the larger the silicon-based heating element, the more friendly it is to the structure assembly and sealing.

[0058] Please refer to FIG. 1 and FIG. 2, FIG. 1 is a structural schematic diagram of an embodiment of the atomization core provided by the present application, and FIG. 2 is an exploded structural schematic diagram of an embodiment of the atomization core provided by the present application.

[0059] Therefore, in order to solve the problems in related technologies, the present application provides an atomization core 1. The atomization core 1 comprises a semiconductor substrate 10, a semiconductor heating layer 20 and an electrode 30. The semiconductor substrate 10 has opposite liquid suction surfaces 10A and atomization surfaces 10B. The semiconductor substrate 10 has a plurality of first liquid conducting through holes 11 penetrating from the liquid suction surface 10A to the atomization surface 10B, and the first liquid conducting through holes 11 are used for conducting the atomization matrix. The semiconductor heating layer 20 is arranged on the atomization surface 10B and has a plurality of second liquid conducting through holes 21. The second liquid conducting through holes 21 communicate with the first liquid conducting through holes 11. The semiconductor heating layer 20 has a plurality of hollow parts 232. The electrode 30 is at least partially arranged on the atomization surface 10B and electrically connected with the semiconductor heating layer 20.

[0060] The semiconductor substrate 10 in the present application plays a role of guiding liquid in the atomization core 1. Compared with the traditional ceramic liquid guide, the semiconductor substrate 10 uses the MEMS (Micro-Electro-Mechanical Systems) processing technology to obtain the first liquid guide through hole 11. The first liquid guide through hole 11 is orderly, the aperture is relatively fixed and straight through, which is beneficial to the transmission of the atomization matrix, ensures high transmission efficiency, and good taste restoration. Secondly, the semiconductor heating layer 20 replaces the traditional metal heating element. The semiconductor material is doped to have conductivity by using semiconductor technology, which can avoid metal corrosion and other problems during atomization, thereby greatly reducing or even eliminating heavy metals, and further improving safety. The second liquid guide through hole 21 is arranged to facilitate the uniform distribution of the atomization matrix in the semiconductor heating layer 20, which is beneficial to improve the consistency of heating. In addition, the semiconductor heating layer 20 is designed to be hollow, which reduces the heating area without reducing the frame size of the whole semiconductor heating layer 20, so that the heating is more concentrated to achieve a better atomization temperature, thereby improving the taste and aerosol amount.

[0061] The semiconductor substrate 10 can be used as a flow guide structure and a storage structure to conduct the atomization matrix to the semiconductor heating layer 20. The semiconductor heating layer 20 is used to heat the atomization matrix to generate aerosol.

[0062] In some embodiments, the semiconductor substrate 10 is an intrinsic silicon substrate, and the semiconductor heating layer 20 is a doped conductive silicon layer or a doped non-silicon semiconductor layer. The thickness of the semiconductor heating layer 20 is less than the thickness of the semiconductor substrate 10.

[0063] In some embodiments, the semiconductor substrate 10 can be one of a germanium, gallium arsenide, gallium nitride, silicon carbide, or the like. In addition, the semiconductor substrate 10 can also be replaced by a conductive ceramic substrate or a conductive glass substrate. The semiconductor heating layer 20 is an electrocaloric material made of a doped semiconductor substrate.

[0064] In some embodiments, the semiconductor heating layer 20 can be an electrocaloric material made of a single crystal silicon or polycrystalline silicon substrate doped with metal atoms. The doped metal atoms include one or more of copper atoms, zinc atoms, manganese atoms, aluminum atoms, gallium atoms, and antimony atoms, but are not limited thereto.

[0065] In other embodiments, the semiconductor heating layer 20 can be an electrocaloric material made of a single crystal silicon or polycrystalline silicon substrate doped with non-metal atoms. The doped non-metal atoms include one or more of phosphorus, arsenic, and boron, but are not limited thereto.

[0066] In some embodiments, the semiconductor heating layer 20 has a resistivity less than that of the semiconductor substrate 10. The semiconductor heating layer 20 includes a frame region 22 and a mesh region 23, the frame region 22 being disposed around the mesh region 23 and connected to the mesh region 23. The mesh region 23 includes a plurality of strip-shaped heating portions 231, the strip-shaped heating portions 231 being arranged in a crisscross manner to define a plurality of hollow portions 232. The second liquid-conducting through hole 21 is at least provided in the mesh region 23 and penetrates the strip-shaped heating portions 231.

[0067] The size of the hollow portion 232 is much larger than that of the second liquid-conducting through hole 21.

[0068] It should be noted that the hollow portion 232 is not designed for conducting the atomized substrate, but for reducing the heating area of the semiconductor heating layer 20. The frame region 22 is beneficial to the structural stability of the entire semiconductor heating layer 20.

[0069] In some embodiments, the projection pattern of the hollow portion 232 close to the frame region 22 is a triangle, and the projection pattern of the hollow portion 232 away from the frame region 22 is a diamond.

[0070] In other embodiments, the projection pattern of the hollow portion 232 can be a regular pattern such as a diamond, a triangle, a trapezoid, a pentagon, a hexagon, an ellipse, a circle, a sector, etc., or an irregular pattern such as a water drop shape, a star shape, etc.

[0071] The semiconductor heating layer 20 has a resistivity less than that of the semiconductor substrate 10, so that the semiconductor heating layer 20 has a better heating efficiency. Here, the resistivity of the semiconductor heating layer 20 and the semiconductor substrate 10 is not limited, and can be selected according to actual needs.

[0072] The second liquid-conducting through hole 21 penetrates the strip-shaped heating portion 231 in the thickness direction of the semiconductor substrate 10, so that the atomized substrate is conducted into the strip-shaped heating portion 231 through the second liquid-conducting through hole 21, and the atomized substrate can be uniformly distributed in the strip-shaped heating portion 231.

[0073] In some embodiments, the second liquid-conducting through hole 21 can be located in the frame region 22 in addition to being located in the mesh region 23.

[0074] In some embodiments, the thickness of the semiconductor substrate 10 is less than or equal to 1 millimeter.

[0075] In some embodiments, the thickness of the semiconductor substrate 10 is less than or equal to 0.5 millimeter.

[0076] In some embodiments, the thickness of the semiconductor heating layer 20 is about 100 microns. The semiconductor heating layer 20 is relatively thin, so that the second liquid guiding through hole 21 is relatively short, and there is almost no space to store the atomized substrate, so that the atomized substrate introduced from the semiconductor substrate 10 to the semiconductor heating layer 20 can be directly heated and atomized each time, and will not be cyclically heated, thereby ensuring the consistency and freshness of the aerosol taste.

[0077] The cross section of the semiconductor substrate 10 can be rectangular, circular, parallelogram, irregular polygon, etc.

[0078] In the present embodiment, the semiconductor substrate 10 is taken as a cuboid for example. That is, the cross section of the semiconductor substrate 10 is rectangular.

[0079] The shape of the semiconductor substrate 10 is not limited to a cuboid, and the external structure thereof can be designed into other shapes according to the structure assembly requirements, such as a square, a cylinder, a prismatic body with rounded corners, etc.

[0080] The first liquid guiding through hole 11 can serve as a liquid guiding structure and a storage structure of the atomized substrate, and is used to guide the atomized substrate on the liquid absorbing surface 10A to the atomizing surface 10B.

[0081] The cross section of the first liquid guiding through hole 11 can be designed into a circular shape, a square shape, a triangular shape, or an irregular polygonal shape, etc.

[0082] In the present embodiment, the cross section of the first liquid guiding through hole 11 is taken as a circular shape for example. The plurality of first liquid guiding through holes 11 are arranged in a matrix.

[0083] In other embodiments, the plurality of first liquid guiding through holes 11 can adopt other arrangement manners such as a radial arrangement, and are not limited to the above-mentioned embodiments.

[0084] The first liquid guiding through hole 11 and the second liquid guiding through hole 21 are both prepared by using the MEMS processing technology. By using the MEMS processing technology, the uniformity of the plurality of first liquid guiding through holes 11 in the semiconductor substrate 10 can be better, and the occurrence of abnormal holes can be effectively avoided. Secondly, the first liquid guiding through hole 11 and the second liquid guiding through hole 21 are both ordered holes, and the fixed hole diameter can avoid the problems such as the occurrence of carbon deposition paste cores. In addition, the semiconductor substrate 10 has better hardness than the cotton core, and the hole diameter of the first liquid guiding through hole 11 is not easy to deform in the assembly process, so that the consistency of the first liquid guiding through hole 11 is better, which is conducive to improving the safety, taste and atomization state of the atomization core 1.

[0085] In some embodiments, the first liquid guiding through hole 11 and the second liquid guiding through hole 21 are both straight through holes, and the diameter of the straight through hole is 5-100 microns. For example, the diameter of the straight through hole can be 5 microns, 10 microns, 15 microns, 20 microns, 30 microns, 40 microns, 50 microns, 60 microns, 70 microns, 80 microns, 90 microns, 100 microns, and the like. The manufacturing process of the straight through hole is relatively simple, and batch production is easy to realize. In addition, the flow path of the atomized substrate in the straight through hole is simple and direct, which reduces the flow resistance and residence time, and helps to improve the liquid guiding efficiency.

[0086] The diameters of the first liquid guiding through hole 11 and the second liquid guiding through hole 21 can be the same or different.

[0087] In some embodiments, the diameter of the second liquid guiding through hole 21 is smaller than that of the first liquid guiding through hole 11, so that the atomized substrate in the first liquid guiding through hole 11 can flow smoothly into the second liquid guiding through hole 21, ensuring smooth supply of the atomized substrate and preventing the first liquid guiding through hole 11 from being blocked; at the same time, it can also avoid storing the atomized substrate in the second liquid guiding through hole 21 to affect the taste of the aerosol, and make the aerosol atomized from the second liquid guiding hole more delicate.

[0088] In other embodiments, the diameter of the second liquid guiding through hole 21 can be larger than that of the first liquid guiding through hole 11.

[0089] In some embodiments, the diameter of the straight through hole is 10-50 microns.

[0090] The semiconductor heating layer 20 is arranged in close contact with the atomization surface 10B to avoid dry burning of the semiconductor heating layer 20, thereby affecting the use experience and safety.

[0091] Please refer to FIGS. 1-5, FIG. 3 is a top view structural schematic diagram of an embodiment of the atomization core provided by the present application, FIG. 4 is a cross-sectional structural schematic diagram of an embodiment of the atomization core provided by the present application, and FIG. 5 is a local enlarged structural schematic diagram of E in FIG. 4.

[0092] In some embodiments, the semiconductor substrate 10 has a plurality of openings 14, and the hollowed parts 232 are arranged in one-to-one correspondence with the openings 14 and communicate with the openings 14. The semiconductor substrate 10 has a high thermal conductivity and is arranged in contact with the semiconductor heating layer 20, so that the heat on the semiconductor heating layer 20 can also be quickly transferred to the semiconductor substrate 10. The closer the semiconductor substrate 10 is to the semiconductor heating layer 20, the faster the heat transfer speed and the higher the temperature. By arranging the openings 14 on the semiconductor substrate 10, the temperature of the opening 14 area, i.e., the area with relatively low temperature during heating, is relatively low, so as to increase the height difference between the semiconductor substrate 10 and the semiconductor heating layer 20 in the opening 14 area, increase the heat transfer path, and block the atomized substrate conducted in the opening 14 area from being heated and atomized. At the same time, the concentrated heating area is limited to the area where the semiconductor heating layer 20 is in contact with the semiconductor substrate 10. Since the concentrated heating area where the semiconductor heating layer 20 is located has the highest temperature, a good atomization temperature can be achieved during heating, thereby improving the taste and aerosol amount.

[0093] In some embodiments, in the thickness direction of the semiconductor substrate 10, the hollowed parts 232 are arranged in overlap with the openings 14, so as to arrange and communicate the first liquid guide through holes 11 and the second liquid guide through holes 21 in one-to-one correspondence, thereby ensuring the supply rate of the atomized substrate in the concentrated heating area.

[0094] In other embodiments, the hollowed parts 232 can cover the aligned openings 14 or be located in the aligned openings 14 in the orthographic projection pattern of the semiconductor substrate 10, which is selected according to actual needs.

[0095] In some embodiments, the openings 14 are through grooves that penetrate the liquid suction surface 10A and the atomization surface 10B. The second liquid guide through holes 21 are arranged and communicated in one-to-one correspondence with the first liquid guide through holes 11. The number of the first liquid guide through holes 11 is equal to the number of the second liquid guide through holes 21. The openings 14 penetrate the semiconductor substrate 10 in the thickness direction to maximally block the atomized substrate conducted in the opening 14 area from being heated and atomized.

[0096] In some embodiments, a sink 12 is arranged on the atomization surface 10B of the semiconductor substrate 10. The semiconductor heating layer 20 is a doped semiconductor substrate, and the doped semiconductor substrate is embedded in the sink 12 and arranged in contact with the bottom wall of the sink 12. The second liquid guide through holes 21 penetrate the doped semiconductor substrate. The openings 14 communicate with the bottom wall of the sink 12. It should be noted that in this embodiment, the semiconductor substrate 10 and the doped semiconductor substrate are separately prepared, and then the doped semiconductor substrate is embedded in the sink 12. That is, the semiconductor substrate 10 and the doped semiconductor substrate are not an integrally formed whole structure, but a combined structure connected by embedding.

[0097] The semiconductor substrate 10 and the semiconductor heating layer 20 can be connected by bonding, adhesion, and lamination.

[0098] In some embodiments, since both the semiconductor substrate 10 and the semiconductor heating layer 20 adopt semiconductor substrates, better interface compatibility exists between the two, better bonding consistency is achieved, dry burning phenomenon is further reduced, and use experience and safety are improved.

[0099] In some embodiments, the sink 12 is open at both ends in the first direction D1. The two side walls of the sink 12 along the second direction D2 are respectively surrounded to form a limiting area 121. The first direction D1 and the second direction D2 are arranged intersecting each other. The shape and size of the doped semiconductor substrate are adapted to the shape and size of the sink 12. The depth of the sink 12 is equal to the thickness of the doped semiconductor substrate.

[0100] The two ends of the sink 12 in the first direction D1 are open 122, which can reduce the alignment requirement and facilitate the installation of the semiconductor heating layer 20 in the sink 12. The limiting area 121 can limit the semiconductor heating layer 20 in the first direction D1, which facilitates the fixation of the semiconductor heating layer 20 in the sink 12.

[0101] The shape and size of the doped semiconductor substrate are adapted to the shape and size of the sink 12, that is, the shape of the space surrounded by the semiconductor heating layer 20 and the sink 12 is the same, and the size is the same.

[0102] It should be understood that, in order to facilitate assembly, the size of the semiconductor heating layer 20 can be slightly smaller than the size of the space surrounded by the sink 12.

[0103] The depth of the sink 12 is equal to the thickness of the doped semiconductor substrate, so as to ensure that the semiconductor substrate is flush with the surface of the semiconductor substrate 10, the flatness is better, and the subsequent installation of the electrode 30 on the surface of the semiconductor heating layer 20 and the atomization surface 10B is facilitated.

[0104] In some embodiments, there is a gap between the side surface of the sink 12 and the side surface of the doped semiconductor substrate, and the gap is filled with a bonding material, so that the semiconductor heating layer 20 can not only be bonded with the bottom wall of the sink 12, but also be bonded with the side wall of the sink 12, so as to better fix the semiconductor heating layer 20 on the atomization surface 10B of the semiconductor substrate 10, avoid dry burning, and facilitate the installation of the semiconductor heating layer 20 in the sink 12.

[0105] In other embodiments, the depth of the sink 12 can be less than or greater than the thickness of the doped semiconductor substrate, which is selected according to actual needs. There can also be no gap between the side surface of the sink 12 and the side surface of the doped semiconductor substrate.

[0106] In some embodiments, the limiting area 121 of the semiconductor substrate 10 and the doped semiconductor substrate are non-porous areas 13. The first liquid guiding through holes 11 are only provided in the sink 12 area. The number of electrodes 30 is two, which are arranged on opposite sides of the atomization surface 10B along the second direction D2. Part of each electrode 30 is arranged on the surface of the semiconductor substrate 10, and part of each electrode 30 is arranged on the surface of the non-porous area 13 of the doped semiconductor substrate.

[0107] It should be noted that the non-porous area 13 of the present application does not provide the first liquid guiding through hole 11 and the second liquid guiding through hole 21. The first liquid guiding through hole 11 is provided in the area of the sink 12 except the limiting area 121. That is, the semiconductor substrate 10 is not fully porous. In addition, the semiconductor heating layer 20 is not fully porous, and the part in the non-porous area 13 does not provide the second liquid guiding through hole 21.

[0108] Part of the electrode 30 is arranged on the surface of the non-porous area 13 to avoid the electrode 30 covering the second liquid guiding through hole 21 and blocking the aerosol.

[0109] Part of each electrode 30 is arranged on the surface of the semiconductor substrate 10 to reserve a contact area on the electrode 30, which is projected on the surface of the semiconductor substrate 10, not on the surface of the semiconductor heating layer 20. By connecting the contact area with an external power supply, the influence of thermal stress is reduced and the service life of the electrode 30 is prolonged.

[0110] The electrode 30 is a metal material, which includes but is not limited to silver, gold, nickel, aluminum and other high conductivity materials. The electrode 30 can be made separately or plated on the semiconductor substrate 10 as a whole.

[0111] The semiconductor substrate 10, the semiconductor heating layer 20 and the electrode 30 are a laminated structure, which can be processed and packaged by using semiconductor technology, and can realize modular production.

[0112] In some embodiments, the semiconductor substrate 10 is a doped semiconductor substrate 10. The semiconductor heating layer 20 is formed on the atomization surface 10B of the doped semiconductor substrate 10. The thickness of the semiconductor heating layer 20 is less than the thickness of the doped semiconductor substrate 10. The semiconductor substrate 10 and the semiconductor heating layer 20 are an integral structure, which can reduce assembly; and, the semiconductor heating layer 20 does not need to be processed on the surface of the substrate as a heating element, which can avoid the heating element on the surface of the substrate from falling off due to poor adhesion. It should be noted that in this embodiment, the semiconductor substrate 10 and the semiconductor heating layer 20 are an integral structure. The atomization surface 10B of the semiconductor substrate 10 is doped to a certain depth in the direction of the liquid absorption surface 10A to form the semiconductor heating layer 20. It can be seen that the semiconductor heating layer 20 is part of the semiconductor substrate 10. That is, before and after doping, the semiconductor heating layer 20 and the semiconductor substrate 10 are an integral structure.

[0113] The first liquid guide through hole 11 and the corresponding second liquid guide through hole 21 are different hole sections of the same through hole of the intrinsic semiconductor substrate 10, which can simplify the preparation process of the liquid guide through hole and reduce the alignment requirement of the first liquid guide through hole 11 and the second liquid guide through hole 21. That is, the first liquid guide through hole 11 and the second liquid guide through hole 21 have the same hole diameter.

[0114] Similarly, the hollow part 232 and the corresponding opening 14 are different hole sections of the same through hole of the intrinsic semiconductor substrate 10, which can simplify the preparation process of the hollow part 232 and the opening 14 and reduce the alignment requirement of the hollow part 232 and the opening 14.

[0115] The thickness of the semiconductor heating layer 20 is less than the thickness of the intrinsic semiconductor substrate 10, so as to retain the liquid guiding and storing function of the intrinsic semiconductor substrate 10 and avoid the entire semiconductor substrate 10 being doped as a semiconductor heating layer 20. It should be understood that if the entire semiconductor substrate 10 forms a semiconductor heating layer 20, the semiconductor substrate 10 has a certain thickness, so that the semiconductor heating layer 20 has a liquid storage function, which causes the atomization substrate in the semiconductor heating layer 20 to be repeatedly heated, affecting the taste of the aerosol. If the semiconductor heating layer 20 is directly communicated with the liquid storage cavity 2 storing the atomization substrate, the cavity explosion phenomenon will occur.

[0116] The semiconductor heating layer 20 is directly doped on the intrinsic semiconductor substrate 10, and the semiconductor heating layer 20 does not have a dry heating phenomenon.

[0117] In some embodiments, the distance from the surface of the semiconductor heating layer 20 close to the liquid absorption surface 10A to the liquid absorption surface 10A is less than or equal to 0.5 millimeters.

[0118] In some embodiments, the atomization core 1 further comprises a substrate 40 disposed on the liquid absorbing surface 10A. The substrate 40 comprises a glass substrate, a quartz substrate or a dense ceramic substrate. The substrate 40 has a plurality of third liquid guiding through holes 41, the number of the third liquid guiding through holes 41 is greater than or equal to the number of the second liquid guiding through holes 21, and one second liquid guiding through hole 21 is only aligned with and communicated with one third liquid guiding through hole 41. The aperture of the third liquid guiding through hole 41 is greater than or equal to the aperture of the second liquid guiding through hole 21 and greater than or equal to the aperture of the first liquid guiding through hole 11, so as to facilitate the third liquid guiding through hole 41 to conduct the atomization substrate to the second liquid guiding through hole 21.

[0119] The substrate 40 serves as a flow guiding structure and a storage structure for conducting the atomization substrate to the semiconductor substrate 10. The substrate 40 can also serve as a support for the semiconductor substrate 10.

[0120] In some embodiments, the aperture of the third liquid guiding through hole 41 is less than or equal to 100 microns.

[0121] Please refer to FIG. 2, FIG. 6 to FIG. 9, FIG. 6 is an exploded structural schematic diagram of another embodiment of the atomization core provided by the present application, FIG. 7 is a top structural schematic diagram of another embodiment of the atomization core provided by the present application, FIG. 8 is a sectional structural schematic diagram of another embodiment of the atomization core provided by the present application, and FIG. 9 is a local enlarged structural schematic diagram at F in FIG. 8.

[0122] In other embodiments, the opening 14 is a blind groove communicated with the atomization surface 10B. The number of the second liquid guiding through hole 21 is less than the number of the first liquid guiding through hole 11, and each opening 14 is respectively communicated with a plurality of first liquid guiding through holes 11. That is, the opening 14 region is also provided with the first liquid guiding through hole 11, so that the number of the second liquid guiding through hole 21 is less than the number of the first liquid guiding through hole 11. The first liquid guiding through hole 11 in the opening 14 region is exposed by the hollow part 232.

[0123] One second liquid guiding through hole 21 is only provided in alignment with and communicated with one first liquid guiding through hole 11, so as to ensure that the atomization substrate can be sequentially conducted to the semiconductor heating layer 20 through the second liquid guiding through hole 21 and the first liquid guiding through hole 11, and ensure the smooth supply of the atomization substrate.

[0124] It should be noted that when the opening 14 is a blind groove or a through groove, the semiconductor heating layer 20 and the semiconductor substrate 10 can be separately prepared, that is, the semiconductor heating layer 20 can be embedded in the semiconductor substrate 10. For the above description, it will not be repeated here.

[0125] When the opening 14 is a blind groove or a through groove, the semiconductor heating layer 20 and the semiconductor substrate 10 can also be an integrated structure. For the above description, it will not be repeated here.

[0126] Please refer to FIG. 10, which is a structural schematic diagram of an embodiment of the electronic atomization device provided in the present application.

[0127] The present application provides an electronic atomization device 300. The electronic atomization device 300 comprises a liquid storage cavity 2 and the atomization core 1 described above. The liquid storage cavity 2 is used for storing an atomization substrate, and is in communication with the atomization core 1 to supply the atomization substrate to the atomization core 1.

[0128] In some embodiments, the electronic atomization device 300 can be an atomizer 100 comprising the liquid storage cavity 2 and the atomization core 1 described above.

[0129] In the present embodiment, the atomization core 1 is arranged below the liquid storage cavity 2 and is horizontally arranged.

[0130] The atomization core 1 can also be vertically arranged or arranged obliquely. For example, the atomization core 1 can be arranged at an angle with respect to a horizontal plane, or can also be arranged at an angle with respect to the circumference of the atomizer 100. That is, the present application does not limit the angle at which the atomization core 1 is arranged.

[0131] In other embodiments, the atomization core 1 can also be arranged on the side of the liquid storage cavity 2, or can be partially embedded in the liquid storage cavity 2. That is, the atomization core 1 and the liquid storage cavity 2 can also be arranged in other manners, which are not limited herein and can be selected according to actual assembly requirements.

[0132] Please refer to FIG. 11, which is a structural schematic diagram of another embodiment of the electronic atomization device provided in the present application.

[0133] In other embodiments, the electronic atomization device 300 further comprises a battery assembly 200. That is, the electronic atomization device 300 can also be a device comprising the battery assembly 200 and the atomizer 100 described above. The battery assembly 200 is used for supplying power to the atomizer 100 to enable the atomizer 100 to work. The battery assembly 200 is electrically connected to the electrode in the atomization core 1 to supply power to the atomizer 100, so that the electrode in the atomization core 1 forms a path with the semiconductor heating layer to enable the semiconductor heating layer to generate Joule heat as a resistor, which can heat the atomization substrate to generate aerosol.

[0134] The electronic atomization device 300 can also comprise a housing, a suction nozzle, a microphone, and other structures, which are not described in detail herein. The detailed structural features of the electronic atomization device 300 are within the understanding of those skilled in the art, and are not described herein again. The structure of the electronic atomization device 300 can be various structures and forms, as long as it utilizes the atomization core structure in the embodiments of the present application, which should be included in the protection scope of the present application.

[0135] In the above embodiments, the description of each embodiment has its own focus, and the parts not described in detail in a certain embodiment can be referred to the relevant description of other embodiments.

Claims

1. An atomizing core, wherein, The atomization core comprises: a semiconductor substrate having opposite liquid absorption surface and atomization surface; the semiconductor substrate has a plurality of first liquid conducting through holes penetrating from the liquid absorption surface to the atomization surface, and the first liquid conducting through holes are used for conducting atomization matrix; a semiconductor heating layer arranged on the atomization surface and having a plurality of second liquid conducting through holes; the second liquid conducting through holes are communicated with the first liquid conducting through holes; the semiconductor heating layer has a plurality of hollow parts; an electrode arranged at least partially on the atomization surface and electrically connected with the semiconductor heating layer.

2. The atomizer wick of claim 1, wherein, The semiconductor substrate has a plurality of openings, the hollow parts are arranged and communicated with the openings one by one; the hollow parts and the openings are arranged in overlap in the thickness direction of the semiconductor substrate.

3. The atomization core according to claim 2, wherein the openings are through grooves penetrating the liquid absorption surface and the atomization surface; the second liquid conducting through holes are arranged and communicated with the first liquid conducting through holes one by one; or the openings are blind grooves communicated with the atomization surface; the number of the second liquid conducting through holes is less than the number of the first liquid conducting through holes; each of the openings is respectively communicated with a plurality of the first liquid conducting through holes.

4. The atomizer wick of claim 2, wherein, The resistivity of the semiconductor heating layer is less than the resistivity of the semiconductor substrate; the semiconductor heating layer comprises a frame region and a mesh region; the frame region is arranged around the mesh region and connected with the mesh region; the mesh region comprises a plurality of strip heating parts; the strip heating parts are longitudinally and transversely staggered to define a plurality of the hollow parts; the second liquid conducting through holes are arranged at least in the mesh region and penetrate the strip heating parts.

5. The atomizer wick of claim 3, wherein, The atomization surface of the semiconductor substrate is provided with a sink; the semiconductor heating layer is a doped semiconductor substrate; the doped semiconductor substrate is embedded in the sink and arranged in contact with the bottom wall of the sink; the second liquid conducting through holes penetrate the doped semiconductor substrate; the openings are communicated with the bottom wall of the sink.

6. The atomizer wick of claim 5, wherein, The sink is open at both ends along a first direction; the sink is respectively surrounded by two side walls along a second direction to form limiting regions; the first direction and the second direction are arranged in intersection; the shape and size of the doped semiconductor substrate are adapted to the shape and size of the sink.

7. The atomizer wick of claim 3, wherein, The semiconductor substrate is an intrinsic semiconductor substrate; the semiconductor heating layer is formed by locally doping the atomization surface of the intrinsic semiconductor substrate; the thickness of the semiconductor heating layer is less than the thickness of the intrinsic semiconductor substrate; the first liquid conducting through hole and the corresponding second liquid conducting through hole are different hole sections of the same through hole of the intrinsic semiconductor substrate; the hollow part and the corresponding opening are different hole sections of the same through hole of the intrinsic semiconductor substrate.

8. The atomizer core of claim 7, wherein, The distance from the surface of the semiconductor heating layer close to the liquid absorption surface to the liquid absorption surface is less than or equal to 0.5 mm.

9. The atomizer wick of claim 8, wherein, The thickness of the semiconductor substrate is less than or equal to 1 mm.

10. The atomizer wick of claim 8 or 9, wherein, The first liquid conducting through hole and the second liquid conducting through hole are straight through holes; the aperture of the straight through hole is 5-100 microns.

11. The atomizer wick of any of claims 1-10, wherein, The atomization core further comprises a substrate arranged on the liquid absorption surface; the substrate comprises a glass substrate, a quartz substrate or a dense ceramic substrate.

12. The atomizer core of claim 11, wherein, The substrate has a plurality of third liquid guiding through holes, the number of the third liquid guiding through holes is greater than or equal to the number of the second liquid guiding through holes, and one second liquid guiding through hole is only aligned and communicated with one third liquid guiding through hole.

13. The atomizer core of claim 12, wherein, The third liquid guiding through hole has a hole diameter greater than or equal to the hole diameter of the second liquid guiding through hole and greater than or equal to the hole diameter of the first liquid guiding through hole; the hole diameter of the third liquid guiding through hole is less than or equal to 100 microns.

14. An electronic atomizing device, wherein, The aerosol generating article comprises a liquid storage cavity and the aerosol generating core according to any one of claims 1-13. The liquid storage cavity is used for storing an aerosol substrate and is communicated with the aerosol generating core.

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