CVD reactor

Abstract

The invention relates to an apparatus and a method for depositing layers on one or more substrates (21), wherein a process chamber (12) arranged in a housing (2) having housing walls (3, 4, 5) is bounded at the top by a process chamber ceiling (13) and at the bottom by a susceptor arrangement (14, 15, 16) for receiving the one or more substrates (21), and a process gas provided by a gas mixing system (10) can be fed into said process chamber (12) by a gas inlet element (6), wherein the susceptor arrangement (14, 15, 16) is heatable by a heating device (17) to a process temperature of > 800°C, wherein the process chamber ceiling (13) is at such a vertical distance from the susceptor arrangement (14, 15, 16) that the process chamber ceiling (13) reaches a temperature of at least 500°C, and having an optical device (22) that interacts with the surface of the substrate (21) or of the susceptor arrangement (14, 15, 16) via an optical path (25) through an opening (23) in the housing wall (3). According to the invention, the optical device (22) shall have an optical waveguide (101, 101') which is formed in particular by a fibre optic cable and connects the opening (23) to an optical element (103) positioned in an optics module (102) at a distance from the opening (23).

Description

Description CVD reactor field of technology

[0001] The invention relates to a CVD reactor and a method for depositing layers on one or more substrates in a CVD reactor. State of the art

[0002] CVD reactors are particularly well known from the DE 102022 132776 Al, DE 10 2022101 806 Al, DE 102022 101 809 Al, DE 102022 114 717 Al, DE 10 2021 114 868 Al, DE 102021 110305 Al, DE 102022 103245 Al, DE 10 2020 126 597 Al, DE 102020 123546 Al, DE 102020 112569 Al, DE 10 2019131 794 Al, DE 102019 117479 Al, DE 102018 130 140 Al, DE 10 2018 130 139 Al, DE 102016 110884 Al, DE 102014 106871 Al, DE 10 2013 101 777 Al and DE 10 2011 002 146 Al. Summary of the invention

[0003] The invention is based on the objective of further developing the technical design of a CVD reactor.

[0004] This application provides a variety of solutions to this problem, described below:

[0005] A CVD reactor, as technically developed by the disclosure content of this patent application, possesses at least one or some of the following features: 31324R6PCT - 11.09.2025

[0006] A gas inlet device for feeding a process gas into a process chamber is located in a stainless steel housing that is gas-tight from the environment. Such a CVD reactor with a gas inlet device is described in DE 102018 130 139 Al. The process gas consists of several reactive gases and at least one inert gas. The reactive gases are stored in a gas mixing system which includes mass flow controllers and valves with which several gas flows can be generated into the gas inlet device. In one process according to the invention, III-V layers are deposited, in particular, on substrates that can consist of a III-V material or a IV material. Another process according to the invention relates to the deposition of II-VI layers on corresponding substrates. Suitable reactive gases include hydrides of elements from Group V and organometallic compounds of elements from Group III.The gas inlet element can have several vertically arranged gas distribution chambers. The gas inlet element can be located in the center of a CVD reactor housing and surrounded by the process chamber. The cylindrical gas inlet element can have gas outlet openings on its outer surface through which the reactive gases are fed into the process chamber separately, each together with an inert gas, such as hydrogen or nitrogen. The gas inlet element can be made of graphite, metal, or a ceramic material. Preferably, the gas inlet element is made of quartz.

[0007] The process chamber can have a process chamber ceiling made of a ceramic material or a coated graphite plate. The process chamber ceiling can rest on the gas inlet device. Alternatively, it can be attached to an upper housing wall using special fasteners. The process chamber ceiling can be attached to a housing top wall. The housing top wall can be detached from the rest of the housing. The housing top wall essentially forms a housing lid. 31324R6PCT - 11.09.2025 The gas inlet device and the process chamber ceiling, which may be formed by a ceiling plate, can be attached to the upper wall of the housing.

[0008] The substrates to be coated are placed on a susceptor assembly. The susceptor assembly can consist of a graphite susceptor. The susceptor, like the process chamber ceiling, can be formed from one or more coated graphite plates. The susceptor assembly can also include cover plates that rest on the upper surface of the susceptor facing the process chamber. These cover plates can surround openings, each containing a substrate. Alternatively, the cover plates can surround openings containing a substrate holder, on which one or more substrates can be placed. There can be radially inner and radially outer cover plates arranged around a gas inlet located in the center of the process chamber.

[0009] The substrate holders, arranged in a circular line around the center of the process chamber, can also be made of graphite or coated graphite. A CVD reactor with a susceptor is described in DE 102009 044276 A1. The top of the susceptor forms pockets. A substrate holder can be arranged in each pocket. Outlet openings for the release of a carrier gas can be provided in the bottom of the pockets. The carrier gas creates a gas cushion between the underside of the substrate holder and the bottom of the pocket, on which the substrate holder can float. The outlet openings can direct the gas flow fed into the space between the substrate holder and the susceptor, thus rotating the substrate holder. The susceptor 31324R6PCT - 11.09.2025 The susceptor assembly is supported by a central shaft that can rotate around a pivot axis. The shaft can be driven by a motor, allowing the susceptor to be rotated during the deposition of layers onto the substrate surfaces.

[0010] The circular susceptor assembly is surrounded by a gas outlet. The gas outlet is ring-shaped and has openings facing the process chamber, through which inert gas, unused reactive gas, and reaction products, fed into the process chamber via the gas inlet, can be removed. The gas outlet is connected to a waste gas line with a pump and a gas purification system. The pump stabilizes the pressure within the process chamber at values ​​between 1 mbar and 1000 mbar.

[0011] A heating device is provided below the susceptor assembly. The heating device can be a flat coil. A protective plate can extend between the heating device and the susceptor assembly, its purpose being to prevent the transport of reactive gases into the section of the housing where the heating device is located. The coil can be a hollow coil. A cooling fluid can flow through the hollow coil. Such a coil can generate an alternating electromagnetic field that induces eddy currents in the susceptor, thus heating the susceptor to a process temperature. The process chamber ceiling can also be heated. Preferably, however, the process chamber ceiling is heated by thermal radiation from the susceptor. 31324R6PCT - 11.09.2025

[0012] Other heating devices can also be used to heat the susceptor assembly to a process temperature, for example an infrared heater or a resistance heater.

[0013] The aforementioned graphite parts can be coated with silicon carbide or tantalum carbide.

[0014] The CVD reactor can include an optical device. This optical device can be a sensor for detecting light. The sensor can be an imaging sensor. Preferably, the sensor is a pyrometer capable of measuring light within a narrowly defined wavelength range. Multiple pyrometers can be provided to measure light of different wavelengths. The sensor can determine both the intensity and wavelength of the light. For example, such an optical device can be used to measure the temperature of a substrate resting on a substrate holder or to determine the layer thickness of a substrate. Preferably, the optical device can also be used to determine emissivity and reflectance values.Particularly for determining reflectance values, the optical device can additionally include a light source, for example a laser or an LED, with which a substrate surface is irradiated. The reflected light is then measured by the sensor, for example a pyrometer. Such an optical device and a related method are disclosed in DE 102022 101 809 A1. The pyrometers according to the invention can measure light in the UV range, in the visible range, and also in the IR range.

[0015] The optical device can also include a light source with which a substrate or a section of the susceptor assembly is illuminated with energy. 31324R6PCT - 11.09.2025 irradiated to locally heat the substrate or susceptor assembly.

[0016] The optical device can interact with the susceptor or the substrate resting on it via an optical path. This optical path can cross the process chamber and extend through an opening in the process chamber ceiling as well as an opening in the housing.

[0017] One variant of a CVD reactor according to the invention can have a rectangular plan. The susceptor or susceptor assembly then has the shape of a rectangle. The gas inlet is located at one edge of the rectangle. The gas outlet is located at the opposite edge of the rectangle. Here, too, the gas inlet can have a plurality of gas distribution chambers arranged one above the other. Reference is also made to the features described above, which this CVD reactor can also possess. It differs from the variant described at the outset essentially in that the flow lines along which the process gas flows through the process chamber run parallel, whereas in the variant described at the outset, the flow lines run in a star-shaped pattern.

[0018] An alternative CVD reactor according to the invention can be a so-called "showhead reactor" in which the gas inlet element is formed by the process chamber ceiling. This ceiling has a plurality of uniformly distributed gas outlet openings through which one or more process gases flow into the process chamber. The substrates can be arranged uniformly distributed over the entire surface of the susceptor. Such a susceptor is described, for example, in DE 102014 100 024 A1. 31324R6PCT - 11.09.2025

[0019] A CVD reactor according to the invention can be part of a cluster system with a plurality of CVD reactors or other units. To enable automated loading and unloading of the process chamber of a CVD reactor, one housing wall has a loading and unloading opening. A transfer chamber of a transfer module can be adjacent to this housing opening. A robot is arranged in this transfer chamber and has a gripper that can be moved through the housing opening into the process chamber to pick up or place a substrate. Preferably, the substrates are supported by substrate holders that have an annular projection which can be gripped by two arms of the gripper. Each substrate carrier can then be handled by the gripper. The gripper can be attached to two arms articulated together. Such a substrate carrier is described, for example, in DE 102020 122198 A1.

[0020] An apparatus according to the invention can include a control unit with which a plurality of process steps are carried out sequentially according to a recipe. In at least some of these process steps, a layer can be deposited on one of the substrates. The recipe controls the mass flow controllers and the valves to feed a suitable gas mixture into the process chamber. The control unit can also regulate the process chamber temperature. The measured value for the process chamber temperature can be determined by the optical device. The control unit is also capable of controlling the robot. Brief description of the drawings

[0021] Exemplary embodiments of reactors according to the invention are explained below with reference to Figures 1 to 9. These show: 31324R6PCT - 11.09.2025 Fig. 1 shows a cross-section through a planetary reactor in which several substrate holders 20, each carrying a substrate 21, are arranged in a circle around a center of a susceptor 14. Fig. 2 shows the view of the susceptor 14, Fig. 3 enlarges the section III in Figure 1, Fig. 4 enlarges section III in Figure 1, Fig. 6 shows a cross-section through a horizontal reactor in which the susceptor 14 has a rectangular shape, Fig. 7 shows a view of the susceptor 14 of a horizontal reactor according to Figure 6, Fig. 8 shows an embodiment of a device in which a CVD reactor 1 is connected to a transfer module 45, Fig. 9 shows a representation according to Figure 1 of a “showerhead reactor”. Description of the embodiments

[0022] The embodiment shown in Figures 1 to 5 is a so-called planetary reactor, in which a [material] made, for example, of quartz [material] is used. The gas inlet device 6 is arranged in the center of a process chamber 12. The process chamber 12 is bounded at the top by a process chamber ceiling 13 made of coated graphite or a ceramic material. The process chamber 12 is bounded at the bottom by a [missing information - likely a specific feature or element] running parallel to the [missing information - likely a specific feature or element]. 31324R6PCT - 11.09.2025 The susceptor arrangement is limited by the susceptor ceiling 12. The susceptor arrangement can consist of a one-piece or multi-piece susceptor 14 – the susceptor 14 can, for example, have a single plate or several plates, such as ring-shaped nested plates – and one or more cover plates 15, 16 arranged on the top of the susceptor 14. A typical arrangement of the cover plates is shown in Figure 2. There are radially inner cover plates 15 and radially outer cover plates 16, with several cover plates 15, 16 of each being arranged in an azimuthal direction around the center of the susceptor 14.

[0023] The cover plates 15, 16 surround circular openings in which a substrate holder 20 is located, which in the exemplary embodiment carries a substrate 21.

[0024] Figure 3 shows an enlarged view of a substrate holder 20 arranged in a pocket 34, which is suspended by a gas stream that creates a gas cushion. The gas stream, flowing through a supply line 32, is directed by the orientation of the opening 33 in such a way as to cause the substrate holder 20 to rotate. As a result, an underside of the substrate holder 20 moves away vertically from a base 34' of the pocket 34.

[0025] Below the susceptor arrangement 14, 15, 16 is a heating device 17, which consists of a flat, hollow coil that generates alternating electromagnetic fields. These fields induce eddy currents in the susceptor 14, which in turn heat the susceptor 14. A coolant can flow through the hollow coil. 31324R6PCT - 11.09.2025

[0026] A plate 31, which acts as a diffusion barrier, can be arranged between the heating device 17 and the underside of the susceptor 14.

[0027] The heating device 14 is arranged around a shaft 28 which can be driven by rotation and which carries the susceptor arrangement 14, 15, 16, so that when layers are deposited on the substrates 21 not only the substrate holders 20 and the substrates 21 resting on them, but also the susceptor 14 or the susceptor arrangement rotates.

[0028] The gas inlet device 6, shown in more detail in Figure 4, is fixedly connected to the housing. The gas inlet device 6 is supplied by a multitude of supply lines 7 via a gas mixing system 10. The supply lines 7 each open into one of several vertically arranged gas distribution chambers 8. Each of the gas distribution chambers 8 extends over a vertical section of a gas outlet surface running along the outer surface of a cylinder. The gas outlet surface has a multitude of uniformly distributed gas outlet openings 9 through which the process gas supplied to the gas distribution chambers 8 can exit into the process chamber 12.

[0029] A bottom chamber or another chamber of the gas inlet device 6 can be a cooling chamber 29 through which a coolant can flow. The corresponding supply and discharge lines are not shown in the drawings.

[0030] The gas mixing system 10 has mass flow controllers and valves (not shown) with which a process gas can be mixed from gas sources (also not shown). The process gas contains several reactive gases, which are separated from each other, each together with an inert gas, by means of a 31324R6PCT - 11.09.2025 Various gas distribution chambers 8 are fed into the process chamber 12. The inert gas can be hydrogen, nitrogen, argon, or another noble gas. The reactive gases can be gases of elements from Group 13 and Group 15. The reactive gases can also contain a dopant.

[0031] The susceptor 14, or the susceptor arrangement 14, 15, 16, is surrounded by an annular gas outlet element 18, which has openings 19 through which waste gas can be removed from the process chamber 12. For this purpose, a gas outlet (not shown) may be provided, to which a vacuum pump is connected, with which a total pressure within the process chamber 12 can be set in a range between 1 mbar and 1000 mbar. The process chamber 12 may have a side wall 27, which closes the process chamber 12 radially. The side wall 27 may connect a radially outer edge of the process chamber ceiling 13 with a radially outer edge of the gas outlet element 18. The side wall 27 may be made of graphite or coated graphite.

[0032] The susceptor 14 or the susceptor arrangement 14, 15, 16 can be rotated relative to the gas inlet element 6. For this purpose, it is advantageous if a section of the susceptor 14 arranged below the gas inlet element 6 has a vertical distance to the underside of the gas inlet element 6.

[0033] Reference numeral 22 denotes an optical device, for example a light source, a laser, or a sensor, such as a pyrometer. The optical device 22, which is shown in more detail in Figure 5, has a measuring device 36, for example the aforementioned pyrometer. The optical device 22 operates via an optical path 25 through an aperture 23. 31324R6PCT - 11.09.2025 the housing wall 3 meets the surface of the substrate 21 or the susceptor arrangement 14, 15, 16. The optical path 25 also passes through an opening 26 in the process chamber ceiling 13.

[0034] A transparent sealing element 24, for example a quartz plate, is provided for the gas-tight closure of the opening 23. This can be attached to a housing wall 3 by means of a holder 37. Seals 38, 39, for example O-rings, can be provided between the sealing element 24 and the housing wall 3 or the holder 37 for sealing purposes.

[0035] Figure 8 shows the combination of a CVD reactor 1 with a transfer module 45, which has a transfer chamber 46. A robot 47, which can be controlled by the control unit 11, is located in the transfer chamber 46. The robot 47 has one or more robot arms 48 that are articulated to one another. A gripper 49 with two gripping arms 50 is provided, which can reach through a loading / unloading opening in a housing wall 4 of the housing 2 to handle substrates 21 or substrate holders. The robot 47 can be used to load or unload the susceptor with substrates 21 or substrate holders 20.

[0036] Figure 9 shows another embodiment in which the gas inlet element 6 is designed as a "showerhead". The gas inlet element 6 extends over the entire upper surface of the susceptor 14 facing the process chamber 12 and has gas outlet openings 9 evenly distributed over the entire underside facing the process chamber 12, from which different gases from two or more gas distribution chambers 8 can flow into the process chamber 12. 31324R6PCT - 11.09.2025

[0037] The susceptor 14 has uniformly distributed storage places for one substrate 21 each on its surface facing the process chamber 12.

[0038] Below the susceptor 14 is a heating element 17, which heats the susceptor 14. The heating element 17 can have several radially nested heating zones. The gas inlet element 6 and the susceptor 14 have a circular disk-shaped plan. The susceptor 14 is surrounded by a gas outlet element 18.

[0039] Regarding the other properties of this CVD reactor, reference is made to the above statements.

[0040] The invention relates to the following individual components: 1. CVD reactor with an optical device, in particular a measuring device, in which light is transported through a light guide.

[0041] The device according to the invention for depositing substrates onto one or more substrates has a housing with housing walls. Inside the housing is a process chamber, which is bounded at the top by a process chamber ceiling and at the bottom by a susceptor arrangement for receiving the one or more substrates. A process gas supplied by a gas mixing system is fed into a gas inlet device. Through gas outlet openings of the gas inlet device, the process gas enters the process chamber, where one or more substrates are located on a susceptor assembly. The susceptor assembly is heated to temperatures exceeding 800°C by a heating device located beneath it. The process chamber ceiling has a very low vertical slope. 31324R6PCT - 11.09.2025 The susceptor assembly is spaced so that at least its surface facing the process chamber is heated to a temperature of at least 500°C by thermal radiation from the susceptor assembly. The walls of the housing can also be heated by radiant heat.

[0042] In the prior art, the elements of the optical system, such as light sources or light sensors, are arranged directly on the reactor lid or directly connected to the reactor wall. This can have disadvantages if these elements need to be replaced and are located in a difficult-to-access area within the overall device. If such an optical element is attached to the reactor lid, opening the reactor becomes cumbersome because the additional weight makes handling the lid more difficult. The attached element also makes the reactor lid bulky.

[0043] To counteract this problem, the invention proposes that the optical device has a light guide.

[0044] According to a preferred embodiment of the invention, it is proposed that the light guide be a flexible conductor, for example, formed from a single optical fiber or a bundle of optical fibers. Furthermore, it can be provided that the light guide connects the opening of the housing or the opening of the process chamber ceiling to a remote optical element, for example, a light source or a light sensor of the type described above. The optical element can be mounted remotely from the reactor housing on a machine housing or a frame. The flexible light guide can be of sufficient length to allow the optical element to be positioned in a maintenance-friendly location or to allow the optical element to be accessed from the reactor housing. 31324R6PCT - 11.09.2025 The reactor lid, free of optical elements, has sufficient maneuvering space.

[0045] The optical element can be arranged in an optical module and, for example, be one of the pyrometers described above. Such an optical module can also interact with two measuring points in one or more reactors. For this purpose, the optical module can be connected via multiple optical fibers to openings in different process chambers of different housings. Each of these housings can have at least one process chamber. The optical module can be configured to include one optical device connected to an optical fiber, several optical devices each connected to an optical fiber, or at least one optical device connected to multiple optical fibers, for example, via a multiplexer. This optical device can then be used to perform measurements sequentially at two measuring points in the same process chamber or in different process chambers.For this purpose, the multiplexer alternately establishes a light connection between the optical device and one of several light guides. With such a multiplexer, a light source can also sequentially illuminate the process chamber or a substrate in several different areas.

[0046] The light guide can be routed through an opening in the housing and terminate in an opening in the process chamber ceiling. The light guide is then made of a material that remains light-conducting at least at 600°C. 31324R6PCT - 11.09.2025

[0047] It may also be provided that the light guide terminates in an opening, an opening in a side wall, a process chamber ceiling or a susceptor. Brief description of the drawings

[0048] Exemplary embodiments of this invention are explained with reference to Figures 10 to 14. They show: Fig. 10 shows a first embodiment in which two flexible light guides 101, 101' are each connected to an optical element 103, 103', wherein the flexible light guides 101, 101' open into different openings 23, 23' of a plate, which can be an upper housing wall 3 or a process chamber ceiling 13, Fig. 11 shows a second embodiment in which two flexible light guides 101, 101' are each connected to openings 23 of different CVD reactors 1, 1', Fig. 12 shows a third embodiment in which two flexible optical fibers 101, 101' are connected via a multiplexer 104 to a common optical element 3, Fig. 13 shows a fourth embodiment in which a flexible light guide 101 opens through an opening 23 in a side wall 27 of the process chamber, 31324R6PCT - 11.09.2025 Fig. 14 shows another embodiment in which the susceptor 14 has an observation opening 105 into which a light guide 101 opens. Description of the embodiments

[0049] In the embodiment shown in Figure 10, an upper housing wall 3 of a CVD reactor 1 shown in Figures 1 and 5 or 6 has two openings 23, 23', in each of which one end of a flexible optical fiber 101, 101', for example a bundle of optical fibers, is located. The end face of the optical fiber 101, 101' is directed towards the underlying substrate 21.

[0050] The other end of the flexible optical fiber 101, 101' is connected to an optical element 103, 103'. The two optical elements 103, 103' belong to an optical module 102, which is mounted on a machine frame at a remote location from the housing 1 of the CVD reactor. The optical module 102, or the optical elements 103, 103', can be connected to an evaluation unit, such as the control unit, via signal lines (not shown).

[0051] The two optical elements 103, 103' can be a light source, for example a laser. They can also be a light sensor, for example a pyrometer. In particular, the optical elements 103, 103' can form the optical elements described above. They are used for temperature measurement or layer thickness measurement. They can also be used for local heating of the substrate 21.

[0052] Alternatively, the light guides 101, 101' can also be installed in an opening 26, 26' of a process chamber ceiling 13, for example a ceiling panel, 31324R6PCT - 11.09.2025 The optical fibers 101, 101' are then guided through additional openings 23, 23' in the housing wall 3. Since the process chamber ceiling 13 can heat up to 600°C, the optical fiber is preferably made of a material that is light-conducting at least at 600°C.

[0053] The embodiment shown in Figure 12 differs from the embodiment shown in Figure 10 essentially in that the two openings 23 are not assigned to the same CVD reactor, but rather the optical fibers 101, 101' interact with different CVD reactors 1, 1'. Here, a common optical module 102 is provided, which interacts with several different CVD reactors 1, 1' in which the same or different processes for depositing layers can be carried out simultaneously.

[0054] The embodiment shown in Figure 12 differs from the embodiments shown in Figures 10 and 11 in that an optical element 103, for example a light source or a light sensor, is optically coupled to different optical fibers 101, 101' sequentially, so that an optical element 103 can interact with two different locations on a substrate 21 or a susceptor surface sequentially. The multiplexer 104, controlled by the control unit, can sequentially establish an optical connection with an optical element 103, for example designed as a pyrometer, using two different optical fibers 101, 101'.

[0055] The embodiment shown in Figure 13 differs from the embodiments shown in Figures 10 to 12 essentially in that the access opening 23, through which the flexible light guide 101 is guided, is not associated with an upper housing wall 3, but 31324R6PCT - 11.09.2025 a side housing wall 4. Here too, it can be provided that the end of the light guide 101 opens into an opening 27 of a process chamber boundary, which is formed here by the side wall 27.

[0056] The embodiment shown in Figure 14 has a susceptor 14 with an observation aperture 105, which interacts with one end of an optical fiber 101. This device allows the optical properties of the underside of the substrate 21, which lies above the observation aperture 105, to be measured. 2. CVD reactor with an optical device, in particular a measuring device, in which the optical path is guided through a susceptor aperture.

[0057] The device according to the invention for depositing layers onto one or more substrates has a housing with housing walls that surround a process chamber. The process chamber is bounded at the top by a process chamber ceiling and at the bottom by a susceptor arrangement. One or more substrates to be coated can be placed on the susceptor arrangement. A process gas supplied by a gas mixing system can be fed into the process chamber via a gas inlet device. An optical device is provided which interacts with the surface of the substrate or the susceptor arrangement via an optical path through an opening.

[0058] In the state of the art, the temperature of a substrate holder or a substrate is measured using an optical device. This is done by 31324R6PCT - 11.09.2025 through the trial chamber. This requires an opening in the ceiling of the trial chamber. The task is to propose an alternative.

[0059] The problem is solved by the invention specified in the claims, in particular claims 3 to 5, wherein the dependent claims represent not only advantageous further developments but also independent solutions to the problem.

[0060] First and essentially, it is proposed that the opening is located in the susceptor assembly. The susceptor assembly can comprise a single- or multi-part susceptor, which is heated by a heating device as described above. The susceptor assembly can be a single plate or a multi-part assembly. The susceptor assembly has a plurality of storage positions, each of which can hold a substrate for treatment in a single step within the CVD reactor. The storage position can be a recess in the upper surface of the susceptor facing the process chamber. The plan view of the recess corresponds approximately to the plan view of a substrate. Preferably, the recess has a circular plan view. The edge of the substrate can then rest against the edge of the recess, thus fixing the substrate in position at the storage position.However, it is also possible that the storage space is formed by a substrate holder, which is a separate component and can be located in a pocket on the top of the susceptor.

[0061] According to the invention, an observation opening is provided on the rear side of the susceptor. This is preferably on the underside of the susceptor, facing a heating element. Through this observation opening- 31324R6PCT - 11.09.2025 An optical path leads to the substrate. Along this optical path, an optical element can interact with either the underside of the substrate or the underside of a substrate holder. The optical element can be a light source, for example, a laser, which can locally illuminate the underside of the substrate or the underside of the substrate holder. By supplying energy, the underside of the substrate or the underside of the substrate holder can be locally heated. The optical element can also be a sensor, for example, a light sensor, and in particular, a pyrometer. The optical device can include several pyrometers that are sensitive to different wavelengths. With this optical element, optical properties of the substrate can be measured. Particularly preferably, the reflection and emission properties of the substrate are measured. This can be done at different wavelengths.It is therefore possible to optically measure the temperature of the substrate's underside or the underside of the substrate holder through the susceptor. The optical measuring device can be permanently attached to the CVD reactor housing. For example, it can be mounted on the bottom of the housing. Alternatively, the measuring device can be located outside the housing, with the optical path passing through the susceptor, the heating element (e.g., through the space between two turns of a coil), and the bottom of the housing. The optical path can be straight. It can be deflected by mirrors or similar devices. It can also be guided by an optical fiber. For this purpose, an optical fiber can extend into an opening in the susceptor.

[0062] According to a further development of the invention, it is proposed that each of the several storage locations is assigned at least one opening, in particular an observation opening, which is equipped with one or more optical inlets. 31324R6PCT - 11.09.2025 directions are connected. It can also be provided that, with an optical device, an interaction between the optical device and the substrate or the substrate holder can take place via a corresponding division of the optical path at several storage locations or at several points of a storage location, for example measuring points.

[0063] In a preferred embodiment, the susceptor arrangement comprises the one or more pockets described above, each of which holds a substrate holder mounted on a gas cushion. The substrate holder can also be rotated by the gas cushion. It may be provided that at least one observation aperture is arranged in the bottom of the pocket, through which an optical device can interact with the underside of the substrate holder. During rotation of the substrate holder, the point at which, for example, a temperature measurement can be taken, moves along a circular path on the underside of the substrate holder. Alternatively, the observation aperture can be located in the center of the pocket, so that the optical path always intersects the substrate holder at the same point.

[0064] In one embodiment, one or more observation openings may be arranged eccentrically to the center of the pocket. These openings may have the same radial distance from the center. However, they may also each have a different radial distance from the center, so that the temperature of the underside of the substrate holder can be measured along multiple circular paths. In other embodiments of the invention, the substrate itself may also be suspended on a gas cushion, so that the temperature can be measured directly on the underside of the substrate.

[0065] In another variant, the substrate holder can also have eccentric openings that periodically open during the rotation of the substrate holder. 31324R6PCT - 11.09.2025 The optical element is aligned with an observation opening in the bottom of the pocket. When the two openings are aligned, the optical element, as part of an optical device, can interact directly with the underside of the substrate, for example, to pyrometrically measure its temperature. Several openings can be arranged in a common circular path around the center of rotation of the substrate holder.

[0066] To generate the gas cushion, a gas outlet opening is provided through which gas can be introduced into the space between the underside of the substrate holder and the bottom of the pocket. The optical path can pass through this gas outlet opening located in the bottom of the pocket. The observation aperture is then formed by a section of the gas supply line through which the gas generating the gas cushion is introduced into the pocket.

[0067] The invention further relates to a method for depositing layers onto one or more substrates, in which an underside of the one or more substrates faces a susceptor arrangement. The upper side of the substrates faces the process chamber. During deposition, an optical device interacts with the surface of the substrate or the surface of the susceptor arrangement through an opening; for example, the surface is observed to measure a temperature. According to the invention, the optical device interacts with the underside of a substrate holder or a substrate using the device described above.

[0068] An embodiment of the invention is explained below with reference to Figures 15 to 18. These show: 31324R6PCT - 11.09.2025 Fig. 15 shows a second embodiment in which straight optical paths 14, 15, 16 pass through openings 111, 112 and 113 of a susceptor 14, Fig. 16 schematically shows a susceptor 14 of a third embodiment, in which the susceptor 14 has pockets 34 each for storing a substrate holder 20, Fig. 17 schematically shows a substrate holder 20 for storage in one of the pockets 34, Fig. 18 shows a representation according to Figure 3, but of the third embodiment.

[0069] Figure 15 shows an embodiment in which three optical elements 117, 118, 119 are arranged inside the housing 2, each interacting with an optical path 114, 115, 116 passing freely through the cavity of the housing 2 and with undersides 21' of a substrate 21. For this purpose, the susceptor 14 has openings 111, 112 and 113 that connect a top side of the susceptor 14 with a bottom side of the susceptor 14, so that the optical path 114, 115 and 116 can pass freely through the openings 111, 112 and 113.

[0070] The optical arrangements in which the optical elements 117, 118, 119 are arranged can also be located outside the housing 2. The underside 5 of the housing 2 can then have additional openings, which are closed, for example, by a transparent window, through which the optical paths 114, 115 pass. 31324R6PCT - 11.09.2025

[0071] The embodiment shown in Figures 16 to 18 has a susceptor arrangement 14, 15, 16 in which several cover plates 15, 16 rest on a susceptor 14, surrounding a pocket 34 with a pocket base 34'. A gas outlet opening (not shown in Figure 23) for a purge gas opens into the pocket base 34'. This gas gas creates the gas cushion between the underside of a substrate holder 20 located in the pocket 34 and the pocket base 34', which not only lifts the substrate holder 20 but also sets it into rotation.

[0072] Each pocket 34 has a centrally located opening 112 and two eccentrically arranged openings 111, 113. In the illustrated embodiment, the eccentrically arranged openings 111, 113 have the same radial distance from the center. In an embodiment not shown, however, the openings 111, 113 have different radial distances from the center.

[0073] The gas inlet element 6 used in this embodiment can be a showerhead, as shown in Figure 9. However, it is also possible to use a process chamber, as shown in Figures 1 to 7. The susceptor arrangement can also be rotatable, as shown in Figure 1. In this case, a measurement through the openings 105 or 111 to 116 can only be performed if the opening coincides with the path of the optical path.

[0074] In the embodiment shown in Figure 17, the substrate holder 20 has four openings 120 evenly distributed around the center, which have the same radial distance to the eccentric openings 111, 113. In an embodiment not shown, however, the radial distances can be different and each can be associated with at least one opening 111, 113. 31324R6PCT - 11.09.2025 When the substrate holder 20 rotates, optical paths 112 and 113 align. Optical paths 114 and 116 can pass through openings 111 and 120, respectively, and 113 and 120, respectively. As the substrate holder 20 rotates, the optical path 114, 116 periodically reaches the underside 21' of the substrate. During this time, the optical path 114, 116 intersects the underside of the substrate holder 20.

[0075] In the exemplary embodiment, the optical path 115, arranged in the center, passes through the central opening 112 and reaches the underside of the substrate holder 20. In an exemplary embodiment not shown, the substrate holder 20 can also have a central opening, so that the optical path 115 extends to the underside of the substrate 21.

[0076] With optical elements 117, 118, 119 not shown in Figure 18, the undersides of the substrate 21 or of the substrate holder 20 can be measured with suitable pyrometers during the rotation of the substrate holder 20.

[0077] Light can also be shone through the openings to, for example, locally illuminate the substrate holder 20 or the substrate 21.

[0078] In an embodiment not shown, the substrate 21 can be suspended in the pocket 34 instead of the substrate holder 20.

[0079] The gas flow, which keeps the substrate 21 or the substrate holder 20 suspended in the pocket 34, can be fed into the pocket 34 through the openings 111, 112, 113. 31324R6PCT - 11.09.2025 3. Gripper with an optical element arranged in a transfer chamber

[0080] The device according to the invention for depositing layers onto one or more substrates comprises a CVD reactor with a process chamber in which the substrates are coated. A transfer chamber of a transfer module is adjacent to the housing of the CVD reactor. A robot equipped with a gripper is located in the transfer chamber. This gripper can reach through a loading / unloading opening in the housing of the CVD reactor or the transfer chamber. The gripper can load substrates into storage locations on a susceptor arrangement within the process chamber. Processed substrates can also be removed from the process chamber using the gripper. The gripper can engage the substrates directly, for example, by gripping underneath them. However, it is also possible for the substrates to rest on substrate holders or transfer rings, which the gripper can then grip underneath.The substrates can be temporarily stored in cassettes or similar containers.

[0081] The invention also relates to a method for treating a substrate, wherein the surface of the substrate is observed with a sensor device before or after the deposition of a layer.

[0082] The prior art describes CVD reactors that incorporate an optical element for determining optical properties, temperatures, or other conditions within a process chamber. Such optical elements can also be used to determine the correct arrangement of substrates within the process chamber or the rotational position of a rotatable susceptor within the process chamber. 31324R6PCT - 11.09.2025

[0083] The invention is based on the objective of increasing the application range of the robot.

[0084] The problem is solved by the invention specified in the claims, in particular claims 6 to 9. The dependent claims not only represent advantageous developments of the dependent claims, but also independent solutions to the problem.

[0085] First and foremost, it is proposed that the robot incorporate an optical element. Specifically, the robot's optical element is designed to detect conditions within a process chamber of a CVD reactor or properties of the substrate when a robot arm or a gripper attached to the robot arm is moved. For this purpose, it is specifically proposed that the optical element be located on the gripper. The optical element can be a sensor or a light source located on the gripper. The sensor can be an imaging sensor, but a photodiode or photocell is sufficient. The light source can be a laser. The sensor and light source can form a light barrier. Alternatively, the optical element can be an optical fiber with an exit pupil connected to a sensor or light source.The optical element can, for example, be the end of a flexible optical fiber, the other end of which is connected to a sensor. It can also be attached to a gripper arm of the gripper. The optical element can function as a particle sensor. A sensor formed by the optical element can receive light emitted by a light source. A gripper can have two gripper arms, one arm containing the light source and the other arm containing a sensor that interacts with the light source. A light barrier can thus be formed between the two gripper arms. 31324R6PCT - 11.09.2025

[0086] It is also possible for an optical element designed as a sensor to only receive light reflected from a substrate surface. For example, a gripper arm can have a light source, such as a laser, that emits a light beam in a direction with a component extending perpendicular to the plane in which the gripper arms extend. This light, preferably emitted obliquely from the gripper plane, can be reflected from a surface within the process chamber, such as a cover plate, a susceptor, or the surface of a substrate. However, a light beam illuminating the surface can also be perpendicular to the surface. The optical path along which an optical measurement is performed can also be perpendicular to the surface. The light reflected in this way can be received by the sensor.The robot arm's movement allows the sensor array mounted on the gripper to be moved through the loading / unloading opening into the CVD reactor's process chamber. This enables optical measurements to be taken on a surface, for example, to detect particles or determine an optical property of the substrate. Light transmission from the gripper to the sensor, or from the light source to the gripper, can be achieved via a flexible light guide, such as a fiber optic cable.

[0087] By appropriately arranging the optical element(s) or elements, the substrate temperature can also be measured using the optical elements assigned to the gripper. Similarly, the deflection of the substrate can be determined. For this purpose, it is advantageous if the optical elements interact in the manner of a light barrier. 31324R6PCT - 11.09.2025

[0088] An embodiment of the invention is explained below with reference to Figures 19 to 21. These show: Fig. 19 schematically shows a robot 47 arranged in a transfer chamber 46 with one or more arms 48, which are connected to each other, in particular by means of joints, and which can be positioned in a horizontal plane via a rotary drive. At the end of one of the arms 48 is a gripper 49 with two gripping arms 50, 50' extending parallel in one plane. An optical fiber 101 is connected to an optical module 102, in which a light source 126 or a sensor 125 may be located. One end of the optical fiber 101 is connected to one of the gripping arms 50. Fig. 20 schematically shows a gripper 49 with two gripping arms 50, 50', each of which is assigned a light guide 101, 101', Fig. 21 schematically shows a light barrier formed by optical elements 130, 131.

[0089] Figure 20 schematically shows a top view of the arrangement depicted in Figure 19, showing that the end of a light guide 101, 101' is arranged on each of the two gripping arms 50, 50', such that a light beam generated by a light source 126 runs along an optical path 127, starting from an optical element 130 formed by the end of the light guide 101, and an optical path 128 leads to an optical element 131 embodied by the end of the light guide 101'. 31324R6PCT - 11.09.2025

[0090] Figure 21 shows that the two optical paths 127 and 128 intersect at a point 129. In Figures 20 and 21, the optical paths 127 and 128 are represented by dashed lines. However, the optical paths 127 and 128 can also be wider and cone-shaped, so that the point 129 is not a point but forms a cross-sectional area.

[0091] If the gripper 49 is moved into a position above a surface, for example the surface of a substrate 21 shown in Figure 21, an optical property of the substrate surface, such as a reflection, can be measured in the cutting volume 129. This device can also be used to determine the properties of other surfaces within a process chamber.

[0092] In another embodiment, the sensor can be an imaging sensor connected to an evaluation unit either via a data line or an optical fiber. The evaluation unit can perform image recognition to determine, for example, the position of a substrate 21 in a process chamber 21. The sensor arrangement associated with the gripper 49 can then detect any misalignment of a substrate 21 in a pocket 34. Furthermore, the susceptor 14 or the susceptor arrangement 14 to 16 (not shown in the drawings) can have markings that can be detected by the sensor arrangement to determine the rotational position of the susceptor arrangement 14, 16 in the process chamber.This is particularly advantageous if the same gripper 49 is subsequently used to either place a substrate 21 or a substrate holder 20 at a storage location or to remove a substrate 21 or a substrate holder 20 from a storage location. 31324R6PCT - 11.09.2025

[0093] A laser or an LED can generate a beam of light that is reflected from the surface of a substrate 21. The light can be guided via a light guide 101, 101'. The light source can also be located in the gripper 49.

[0094] An optical sensor, such as a pyrometer, can be used to measure the light reflected from the surface of the substrate 21; for example, its wavelength or intensity can be measured. The optical sensor can be located on the gripper 49. However, it can also be located remotely from the gripper 49 and communicate with it via an optical fiber, such as a glass fiber. 4. Device for determining the electrical band gap of a layer during its growth and using such a value to control a heating device

[0095] The invention relates to a device for depositing layers onto one or more substrates, wherein a susceptor arrangement carries one or more substrates within a housing of a CVD reactor. A process gas containing one or more reactive gases and an inert gas is supplied by a gas mixing system. The process gas is fed into the process chamber via a gas inlet device. Optical properties of the substrate surface can be determined by means of an optical device having an optical path that interacts with a surface of the substrate or the susceptor arrangement through an opening in the housing wall or an opening in the process chamber ceiling. 31324R6PCT - 11.09.2025

[0096] The invention further relates to a method for depositing semiconductor layers, in which optical properties of substrates or of layers deposited on substrates are measured with optical sensors during the deposition of the semiconductor layers and these properties are used for temperature control.

[0097] In the prior art, such a sensor arrangement measures the reflectance and emissivity of a substrate surface. The surface temperature of the substrate is then determined from these reflectance and emissivity values. A control unit regulates a heating device to maintain the substrate surface temperature against a setpoint.

[0098] The goal of the deposition process is to create semiconductor layers with defined electrical properties, where one essential electrical property is the electrical band gap of the layer.

[0099] The invention is based on the objective of further developing the aforementioned device in order to improve the process result.

[0100] The problem is solved by the invention specified in the claims, in particular claims 10 to 12. The dependent claims not only represent advantageous developments of the dependent claims, but also independent solutions to the problem.

[0101] First and foremost, it is proposed that the optical device be a sensor for optically determining the electrical band gap of at least one of the deposited layers. It is advantageous if the sensor is a pyrometer capable of measuring the wavelength of one of the 31324R6PCT - 11.09.2025 The optical device measures the wavelength of light emitted from the layer. It may also include a light source with which the layer can be optically excited so that the wavelength characteristic of the electrical band gap can be determined from the wavelength of the light received by the sensor. The device preferably includes a signal evaluation unit with which the signal detected by the optical sensor can be converted into a value for the electrical band gap. The optical device preferably detects a direct or indirect band transition in the semiconductor layer. Luminescence can be excited with a laser and observed with the optical device.

[0102] In a preferred embodiment of the invention, the signal representing the electrical band gap is fed to a control device. This control device can then control a heating device. Unlike in the prior art, the heating device is not used to regulate a substrate temperature to a setpoint. The controlled variable here is the band gap of the layer determined by the optical device. The actuator is the heating device, which receives a manipulated variable from the control device, which in this case can be heating power or electrical power.

[0103] The invention further relates to a method in which the controlled variable is a band gap of the deposited layer determined by means of a sensor. The heating power of the heating device is optionally varied using a control curve or a control table such that the measured band gap is controlled against an actual value by varying the heating power. 31324R6PCT - 11.09.2025

[0104] An embodiment of the invention is explained below with reference to the accompanying drawings. These show: Fig. 22 is a representation according to Figure 5.

[0105] An optical device 22, comprising an excitation laser and a pyrometer, is located on the upper housing wall 3. The laser is capable of optically exciting the surface of the substrate 21, or the layer deposited on the substrate 21, along an optical path 25, such that the uppermost layer, namely the growing layer, luminesces at the excitation point. The luminescence signal is received by the sensor.

[0106] By means of a signal evaluation unit 137, the signal received from the sensor can be converted into a numerical value of an electrical band gap. This value can be transmitted digitally or analogously as current or voltage via the measuring section 135 to the control unit 11. The control unit 11 is able, using a control function or control table via the control section 136, to operate the heating device 17 with variable power such that the value of the electrical band gap is regulated against a setpoint.

[0107] According to the invention, the heating device 17 is controlled in such a way that the electrical band gap of the layer deposited on the substrate 21 at the time of control is kept at a setpoint value. 5. A transparent window sealing an opening in the housing wall of a CVD reactor, which influences the path of a light beam or optical path by means of a local displacement. 31324R6PCT - 11.09.2025

[0108] The invention relates to a device for treating one or more substrates in a CVD reactor. The CVD reactor has a housing with housing walls. Inside the housing is a process chamber with a process chamber ceiling and a susceptor. Substrates can be placed on the susceptor and coated with a layer, in particular a semiconductor layer. For this purpose, reactive gases are fed into the process chamber, where they decompose. The decomposition products of these gases are deposited as a layer on the substrates. An optical device allows observation of the surface of the substrate or the susceptor assembly from the outside through an opening in the housing wall. The opening is closed with a transparent window, for example made of glass or quartz, so that no reactive gases can escape from inside the housing, but light can pass through the housing.

[0109] There is a need to be able to influence the optical path along which light propagates within the reactor housing. With current technology, this requires spatially relocating an optical element, such as a sensor or a light source.

[0110] The invention is based on the objective of providing means by which the optical path can be changed using simple means.

[0111] The problem is solved by the invention specified in the claims, in particular claims 13 to 15, wherein the dependent claims not only represent further developments of the invention specified in the subordinate claims, but also independent solutions to the problem. 31324R6PCT - 11.09.2025

[0112] First and foremost, a transparent element is proposed, configured to alter the path of a light beam relative to the housing. By relocating this element, the path of the optical path can be changed. Particularly preferably, the transparent element is a window configured to focus, diverge, deflect, or otherwise influence the path of a light beam, such that relocating the window, for example, changes the direction of the optical path. For instance, the window can function as a lens, such as a convex or concave lens, or as a prism, so that relocating the window in a plane can change the position of a focal point or the point of incidence of an optical path on a surface of the substrate or a susceptor arrangement.The window's movement can be linear or rotational. It can also be designed so that a vertical movement of the window affects the path of the light beam.

[0113] The window can be attached to the housing wall by a bracket capable of shifting or rotating the window in the plane of the housing wall while maintaining its sealing function. The bracket can also be designed to allow the window to pivot about a vertical or horizontal axis. Furthermore, the bracket can be designed to allow the window to be displaced vertically. A surface of the window through which the optical path passes can be curved. This surface can be convex or concave. Additionally, a surface can be provided that slopes obliquely to the plane of the opening that the window closes. Preferably, this surface is the surface of the window facing the process chamber. 31324R6PCT - 11.09.2025

[0114] According to a further development of the invention, a control device interacts with actuators, for example, stepper motors, which allow the relative position of the window to be changed with respect to the housing, in order to change the position of a contact point of an optical path with the surface of the substrate or a surface of the susceptor arrangement. The actuators can, for example, be electric motors, in particular stepper motors, which can be driven by a control device to change the direction of the optical path.

[0115] The invention further relates to a method in which an optical element interacts at a point of contact of an optical path with a surface of the substrate or a surface of the susceptor assembly, for example, to locally heat the surface or to determine an optical property of the surface. The optical element can be a light source, for example, a laser. The optical element can also be a sensor, for example, a pyrometer. An actuator can be used to change the position of the point of contact even during the deposition of a layer, in order to optimally position the point of contact or the measurement point. With the method according to the invention, it is possible to act on a surface of the susceptor assembly or a substrate surface at different locations during a single process step, or to obtain information from different locations.

[0116] The transparent element can be a prism or a lens, which is present in addition to the window closing the opening, in order to influence the course of the optical path by displacing the transparent element. 31324R6PCT - 11.09.2025

[0117] Exemplary embodiments of the invention are shown with reference to Figures 23 to 27 described. They show: Fig. 23 shows a cross-section through a window 24 of a first embodiment, which is attached to a housing wall 3 by a bracket 37, Fig. 24 is a top view in the direction of arrow XXIV in Figure 23, Fig. 25 shows a representation according to Figure 23 of a second embodiment, Fig. 26 shows a representation according to Figure 23 of a third embodiment and Fig. 27 shows a representation according to Figure 23 of a fourth embodiment.

[0118] In the housing 3 of the CVD reactor 1 housing, there is an opening 23. An optical path 25 runs through the opening 23. The opening 23 is closed by a window 24. The window 24 is held by a bracket 37. The window 24 is located on the outside of the housing 3. However, it can also be located on the inside. The window has a circular plan. However, the plan can also be polygonal. The window 24 is held by a bracket 37. A mounting surface 142 of the window, which can be a circumferential surface, is connected to a surface of the bracket 37. Opposite the housing wall 3, the frame- 31324R6PCT - 11.09.2025 The bracket 37 is sealed with seals 38. Fastening elements (not shown) are provided for attaching the bracket to the housing. The fastening elements are designed so that the bracket 37, together with the window 24, can be moved in the direction of arrow 149. This can be done using an actuator 147, which, for example, has a stepper motor. The actuator 147 can be controlled by a control unit 11 to move the window 24 within the opening 23.

[0119] The bracket 37 forms a frame comprising a radially outer region 145, a central region 144, and a radially inner region 143. The radially inner region 143 can be bonded or fused to the window 24. The radially outer region 145 can be a mounting area by which the bracket 37 is attached to the housing wall 3.

[0120] The window 24 of the first to third embodiments has an outwardly facing surface 141 that lies in a plane. An optical path 25 passes through this surface. The optical path 25 emerges from the transparent window 24 on the opposite surface 140, which faces the process chamber. At least one of the surfaces 140, 141 is designed such that the angle of the surface 140 to the direction of extension of the optical path 25 changes when the window 24 or the support 37 holding the window 24 is pivoted or moved.

[0121] In the embodiment shown in Figure 23, the surface 140 is convexly shaped and is in a position to focus a measuring beam.

[0122] In the embodiment shown in Figure 25, the surface 140 is concave and is able to widen a light beam. 31324R6PCT - 11.09.2025

[0123] In the embodiment shown in Figure 26, the surface 140 is inclined. The surface normal of the flat surface 140 runs at an angle of inclination other than 90° to the course of the optical path 25. The optical path 25 therefore bends (not shown) at the surface 140 relative to its course within the window 24, so that a rotation of the window 24 or the holder 37 results in a displacement of an impact point (also not shown) on the surface of a substrate or a susceptor arrangement.

[0124] When using the device designed in this way, the point of impact of an optical path 25 on a substrate can be changed by actuating an actuator 147. If the optical path interacts with a sensor, for example a pyrometer, the position of a measuring point can be changed, for example to measure a temperature.

[0125] The invention can be used in conjunction with reactors in which a susceptor 14 supporting the substrates 21 rotates. However, the invention can also be used in CVD reactors in which the susceptor does not rotate. In both cases, it is possible to provide measurements or effects by changing the position of the window at different points on different substrates or on a single substrate. 6. A transparent window sealing an opening in the housing wall of a CVD reactor, the passage area for an optical path being surrounded by a thermal insulation zone.

[0126] The invention relates to a device for treating one or more substrates, wherein a susceptor arrangement with bearings is housed in a casing. 31324R6PCT - 11.09.2025 The housing is arranged in positions for one or more substrates. The housing has at least one wall with an opening for an optical path running between an optical device and one of the storage positions, allowing the optical device to interact with a substrate resting on the storage position. The opening is closed by a window. The window has a transparent body that is attached to the housing wall by a bracket. A heating device is located inside the housing to bring the substrate to a process temperature.

[0127] A process gas, consisting of one or more reactive gases and a carrier gas, is introduced into the housing. Decomposition products of the reactive gases not only deposit as a layer on the substrate but also form a parasitic coating on a surface of the window facing the substrate, reducing its transparency. This reduction in transparency affects the interaction of the optical device with the substrate, which is considered a disadvantage.

[0128] The invention is based on the objective of counteracting this disadvantage.

[0129] The problem is solved by the invention specified in the claims, in particular claims 16 to 18, wherein the dependent claims represent not only advantageous further developments of the invention specified in the dependent claims, but also independent solutions to the problem. 31324R6PCT - 11.09.2025

[0130] First and foremost, it is proposed that the passage area through which the optical path passes through the window be thermally insulated from its surroundings in such a way that the surface of the window facing the substrate or susceptor assembly heats up to a higher temperature in the passage area than in a section of the window surrounding the passage area. This heating can be achieved by thermal radiation from the susceptor, which is heated by a heating device. To promote this heating, a thermal insulation zone is proposed, positioned between the passage area and the mounting bracket. The mounting bracket can be made of metal. The window can have a transparent body made of glass or quartz. This body is attached to the housing by the mounting bracket in such a way that the housing opening through which the optical path passes is sealed.

[0131] The insulation zone can be a zone surrounding the penetration area in which the material thickness of the window is reduced relative to the penetration area, or in which the material thickness of the bracket is reduced relative to a radially outer area where the bracket is attached to the housing wall. The penetration area can be surrounded by an annular groove forming the insulation zone. The edge of the window can be bonded to the bracket by material or force. In a preferred embodiment, the window is fused to the bracket. The window can have a rotationally symmetrical body with a circumferential wall extending along the outer surface of a cylinder. This circumferential wall is connected to a circumferential wall of the bracket extending along the inner surface of a cylinder, for example, by material bonding. 31324R6PCT - 11.09.2025

[0132] According to a further preferred embodiment, the window has several zones extending around the penetration area. In the penetration area, the window can have a maximum material thickness measured in the direction of the optical path. The isolation zone can be characterized by a material thickness of lesser than that of the window in the penetration area. The bracket can have a maximum material thickness in its radially outer region, where it is attached to the housing wall. It can be provided that the material thickness of the bracket, i.e., the thickness of the bracket measured in the direction of the optical path, has a minimum in a contact zone with the window.

[0133] The invention utilizes the finding that the parasitic buildup on the surface of the window facing the susceptor assembly is due to condensation of decomposition products of the reactive gases. This condensation can be reduced by increasing the surface temperature of the window.

[0134] Exemplary embodiments of the invention are described below with reference to Figures 23 to 27. These show: Fig. 23 shows a cross-section through a window 24 of a first embodiment, which is attached to a housing wall 3 by a bracket 37, Fig. 24 is a top view in the direction of arrow XXIV in Figure 23, Fig. 25 shows a representation according to Figure 23 of a second embodiment, 31324R6PCT - 11.09.2025 Fig. 26 shows a representation according to Figure 23 of a third embodiment and Fig. 27 shows a representation according to Figure 23 of a fourth embodiment.

[0135] The window 24 shown in the figures closes an opening 23 in a housing wall 3 of the housing 2. The window 24 is made of a transparent material, for example glass or quartz, so that light can pass through the window along an optical path 25 through a passage area 164.

[0136] In the exemplary embodiment, the window 24 is designed as a rotationally symmetric body and is attached to the outside of the housing wall 3 by means of a bracket 37, which forms a frame. Fastening screws can be provided for this purpose, which pass through fastening openings in the bracket 37. The bracket 37 is gas-tightly connected to the housing wall 3 by means of seals 38.

[0137] According to the invention, a thermal insulation zone 148 is located between a fastening section formed by an edge section 145 of the bracket 37 and the passage area 164. In the exemplary embodiments, the thermal insulation zone 148 is designed as an annular groove in which the thickness of either the window 24 or the bracket 37, measured in the direction of the optical path 25, is reduced.

[0138] When using the CVD reactor to deposit layers on substrates 21 arranged on storage sites of the susceptor arrangement 14, 15, 16, a mixture consisting of reactive gases and an inert gas is used. 31324R6PCT - 11.09.2025 Process gas is fed into a process chamber 12 through a gas inlet device 6. The reactive gases decompose due to high temperatures generated by a heating device 17. The decomposition products are also transported by diffusion or other transport mechanisms to the surface 140 of the window 24, which faces the susceptor 14.

[0139] This surface 140 is heated to an increased temperature due to the heating power generated by the heating device 17, for example by thermal radiation, but also by thermal conduction. Due to the increased temperature, the decomposition products condense to a lesser extent on the surface 140, so that the degree of transparency of the window can be maintained at a higher value for a longer period than is the case with a non-thermally insulated penetration area 164.

[0140] In the embodiment shown in Figures 23 and 24, the bracket 37 has the form of a circular ring. The ring has an edge section 145 by which the bracket 37 is attached to the housing wall 3. Radially inward from the edge section 145 extends a central section 144, which has a smaller material thickness than the edge section 145. The central section 144 surrounds a radially inner section 143, which has a greater material thickness. The material thickness of the radially inner section 143 is greater than both the material thickness of the central section 144 and the material thickness of the edge section 145.

[0141] The wall of the radially inner section 143, facing the center of the bracket 37, forms a mounting surface 142 to which the cylindrical body of the window 24 is fully attached. The window 24 can be bonded to the bracket 37. It can be fused with the material of the bracket. The material thickness of the window 24 can be greater here. 31324R6PCT - 11.09.2025 be smaller than or identical to the material thickness of the radially inner section 143. The window 24 can extend into the cross-sectional area of ​​the opening 23.

[0142] The bracket 37 can be made of metal, for example aluminum or stainless steel. The material of the bracket 37 has a higher thermal conductivity than the material of the window 24.

[0143] The middle section 144 forms an annular groove 148, which forms a thermal insulation zone.

[0144] In the embodiments shown in Figures 23 to 25, the length of the mounting surface 142, measured in the direction of the optical path 25, is greater than the material thickness of the closure element, consisting of window 24 and bracket 37, in the area of ​​the insulation zone 148. According to a preferred embodiment, however, this length of the mounting surface 142 is less than the maximum material thickness of the closure element. Preferably, the material thickness, measured in the direction of the optical path 25, i.e., along an axis of the closure element, has a minimum in the area of ​​the mounting surface 142.

[0145] Figures 26 to 27 show examples of this.

[0146] In the embodiment shown in Figure 26, the window 24 has a maximum material thickness d2 in the passage area 164. In the section 144 surrounding a central section of the window 24, the window 24 has a minimum material thickness d3. The latter is smaller than the former. 31324R6PCT - 11.09.2025

[0147] Section 144 is materially bonded to the annular bracket 37 in the area of ​​the now minimized mounting surface 142. Its material thickness dl is greater than the minimum material thickness d3 of the window 24. In the exemplary embodiment, the material thickness dl of the bracket 37, which has a rectangular cross-section, is less than the maximum material thickness d2 of the window 24.

[0148] In the embodiment shown in Figure 27, the window 24 has the shape of a cylinder with an axial length d2. The bracket 37 has an L-shaped cross-section and forms a radially outer region 145 with which the bracket 37 is attached to the housing wall 3. In this region 145, the bracket 37 has a thickness dl that is greater than the thickness d3 of a central section 144 that runs above an insulation zone 148. Here, too, the window 24 has a thickness d2 that is greater than the maximum thickness dl of the bracket 37.

[0149] An annular groove 148 is formed, creating the thermal insulation zone. A central section 144 of the closure element, consisting of window 24 and bracket 37, which closes the annular groove 148 on its side facing away from the inside of the housing, can be formed by either window 24 or bracket 37. In an embodiment not shown, the central section 144 can also be formed by a portion of window 24 and a portion of bracket 37. The mounting surface 142 can thus extend along either side of the annular groove 148. Alternatively, the mounting surface 142 can also extend between the two sides of the annular groove 148, for example, in its center. 31324R6PCT - 11.09.2025 7. A window that closes an opening in the housing wall of a CVD reactor, wherein different zones can be brought into a passage area of ​​an optical path by moving the window.

[0150] The invention relates to a device and a method for depositing layers onto one or more substrates. An opening, closed by a transparent window, is located in a housing wall. An optical path runs through the window between an optical device, for example, an optical sensor such as a pyrometer, and a substrate support position. The support position is located on a susceptor assembly, which can be heated to a process temperature by means of a heating device. A process gas containing reactive gases is fed into a process chamber of the device through a gas inlet. The reactive gases decompose at the process temperature and deposit a layer on the substrate surface. It is unavoidable that reactive gases also reach the surface of the window facing the substrate and form a layer there as well.This layer affects the transparency of the window.

[0151] In some applications, the optical device measures the current temperature of a substrate. The measured temperature is used to control the heating device. A coating on the window leads to inaccurate measurements. To avoid this disadvantage, it has already been proposed, for example by JP 60128265 A, that the window has several zones that are sequentially moved into an operating position in which the optical path passes through the respective zone. Until then, one or more zones are kept in a protected position in which the reactive gases or their decomposition products cannot reach the surface. 31324R6PCT - 11.09.2025

[0152] The invention is based on the objective of further developing such a window, which can be moved between several operating positions, in a way that is advantageous for use.

[0153] The problem is solved by the invention specified in the claims, in particular claims 19 to 21, wherein the dependent claims represent advantageous further developments of the invention specified in the subordinate claims, but also independent solutions to the problem.

[0154] First and essentially, it is proposed that an intermediate zone be arranged between a first zone, which lies within the optical path's passage area in a first operating position, and a second zone, which only lies within the optical path's passage area in a second operating position and is covered by a cover in the first operating position. According to the invention, the at least two zones do not directly adjoin each other, but are spaced apart by an intermediate zone.

[0155] The intermediate zone can be an opaque area of ​​the window. Within this intermediate zone, the window surface facing the substrate storage area can have a coating. Preferably, the surface of the intermediate zone is designed to promote targeted parasitic growth. The intermediate zone can be a condensation zone, which is more attractive to parasitic growth than the transparent surface of the window. For this purpose, the window surface in the area of ​​the intermediate zone can have a suitable coating. The coating can consist of the same material as the layer to be deposited on the substrate in the process chamber. 31324R6PCT - 11.09.2025 consists of. The coating may also consist of a similar material with which the reactive gases or their decomposition products can react.

[0156] The intermediate zone can also be a diffusion zone, which inhibits the transport of reactive gases or their decomposition products from the free surface of the window to the surface covered by the cover. This diffusion zone can also be formed by a coating. The diffusion zone can also absorb reactive gases or decomposition products to prevent them from condensing on the window surface. Alternatively, the diffusion zone can form a diffusion barrier, reducing the gap between the window surface and the surface of the cover facing the window. For example, the window can have a slightly greater material thickness in the area of ​​the intermediate zone. The intermediate zone then forms a contact surface that rests against a mating surface of the cover.

[0157] For the implementation of the inventive method, in which the window changes its operating position when a limit value of turbidity of the surface of the window is exceeded, it is advantageous if an actuator can be attached to the window which, controlled by the control device, moves the window from one operating position to another operating position.

[0158] The window can be shifted linearly. In this case, the different zones of the window are arranged in a straight line, one behind the other. Alternatively, the window can be rotated around an axis. In this case, the different zones of the window are arranged in an azimuthal direction around a center of rotation of the window. 31324R6PCT - 11.09.2025

[0159] Exemplary embodiments of the invention are explained below with reference to Figures 28 to 31. These show: Fig. 28 shows a first arrangement of a sliding window 24 in a first operating position, Fig. 29 shows the window depicted in Figure 28, but in a second operating position, Fig. 30 shows a top view of a window 24 of a second embodiment, which can be linearly displaced by an actuator 167. Fig. 31 shows a top view of a window 24 of a third embodiment, which can be rotated by an actuator 167.

[0160] The window 24 described above has, according to the invention, several distinct zones. It has transparent zones 161, 162, 163, each of which is spatially separated from the others by an intermediate zone 165. The window 24 has a surface facing outwards from the interior of the housing and a surface 24' facing towards the substrate 21 to be coated in the housing. An optical path 25 can pass through the transparent zones 161, 162, 163, optically connecting an optical device 22, for example a pyrometer, to a point, for example a measuring point, on a surface in the process chamber, for example a surface of a substrate. 31324R6PCT - 11.09.2025

[0161] The reactive gases fed into the process chamber 12 also reach the window 24 by diffusion or another transport mechanism and can be deposited on the inner surface 24' of the window, thus clouding it. The window 24 interacts with a cover 160 in such a way that, in one of several operating positions, only a transparent zone 161, 162, 163 is present in a passage area 164 of the optical path 25. An optical measuring device operates along the optical path. This can be the same optical measuring device formed by the optical device 22. The degree of clouding of the window 24 can be determined using the optical measuring device.

[0162] If the opacity of window 24 reaches a limit value, window 24 is moved by an actuator 167, which may include a stepper motor, such that the opaque transparent zone 161 of the window is moved out of the passage area 164 and another zone 162 is moved into the passage area 164. In this way, the effective service life of window 24 can be gradually extended.

[0163] The intermediate zone 165 arranged between the transparent zones 161, 162, 163 has several design forms according to the invention.

[0164] First, the intermediate zone 165 spatially separates two transparent zones 161 and 162 from each other.

[0165] The intermediate zones 165 can be made of a non-transparent material. For example, they can be made of a different material than the transparent zones. However, it is also possible for the intermediate zones 165 to be made of the same material as the transparent zones. For example, window 24 can be made in one piece from quartz or glass. 31324R6PCT - 11.09.2025 be manufactured. In the area of ​​the intermediate zones 165, one of the two surfaces, preferably the surface 24' facing the process chamber 12, can be coated.

[0166] The surface of the intermediate zone 165 preferably has a property that promotes the condensation of the reactive gases or their decomposition products. The surface then forms an area that is energetically more favorable for the adhesion of the reactive gases or their decomposition products than the surface of the transparent zones. The unwanted deposits then occur more frequently in the area of ​​the intermediate zone 165 than in the area of ​​the transparent zones. For this purpose, it is advantageous if the intermediate zone 165, which is adjacent to the transparent zone through which the optical path 25 currently passes, has at least a portion, but preferably a large portion, of a free surface facing the process chamber. The intermediate zone then forms a sink for the absorption of the reactive gases or their decomposition products.The intermediate zone 165 can be coated with a material to which the reactive gases or their decomposition products preferentially adhere, for example, the same material as the layer to be deposited in the process chamber. However, the coating can also have a similar composition to the layer to be deposited.

[0167] According to one variant of the invention, the intermediate zone is provided to form a diffusion barrier.

[0168] While a first transparent zone 161, which, for example, is in the operating position shown in Figure 50, in which the optical path 25 passes through this transparent zone 161, all other transparent zones 162, 163 are covered by a cover 160, which can be a cover plate. A gap between the surface facing the cover 160 31324R6PCT - 11.09.2025 The gap between window 24 and surface 160 of cover 160 is fundamentally unavoidable. Through this gap, a reactive gas or a decomposition product of the reactive gas can enter, potentially clouding even transparent zones 162 and 163 that are held in a confined position.

[0169] Here, it initially proves advantageous if the intermediate zone 165 forms a diffusion zone to which the reactive gases or their decomposition products can diffuse. Since the reactive gases or their decomposition products preferentially accumulate there, the gap width is reduced by the parasitic growth on the intermediate zone 165.

[0170] The intermediate zone 165 preferably acts as a diffusion barrier, preventing the entry of reactive gases or their decomposition products into the gap. For example, the window 24 may have a greater material thickness in the area of ​​the intermediate zone 165 than in the area of ​​the transparent zones 161, 162, 163. When the window 24 is moved, for example, from the operating position shown in Figure 28 to the operating position shown in Figure 29, the surfaces of the intermediate zones 165 can slide along the surface 160' of the cover 160.

[0171] In the embodiment shown in Figures 28 and 29, the window 24 is arranged on the inside of the housing wall 3. However, it is also possible for the window 24 to be arranged on the outside of the housing. The cover 160 can then be formed from a section of the outer wall of the housing 2.

[0172] Figure 30 shows that the window 24 can have an elongated rectangular shape, with the transparent zones 161, 162, 163 31324R6PCT - 11.09.2025 They can be square or rectangular. The area of ​​the transparent zones 161, 162, 163 can be larger than the area of ​​an intermediate zone 165.

[0173] Figure 31 shows a circular window 24, in the center of which a rotary drive 167 is arranged to rotate the window 24 by one step when changing the operating position.

[0174] Window 24 can be multi-part; for example, the transparent areas 162 can be made of glass or quartz, and the intermediate zones 165 of a ceramic material or metal. The intermediate zones 165 can be formed by a frame with openings, into which transparent bodies are inserted. The frame can be formed by a flat body that has a greater material thickness than the transparent bodies inserted into the openings of the frame. 8. Use of chlorine or HCl to clean a window of a CVD reactor

[0175] The invention relates to a device and a method for depositing layers onto one or more substrates in a CVD Reactor. The CVD reactor has a housing with a wall featuring a window. The window is transparent. An optical path runs through the window, connecting an optical device, such as a sensor, to a substrate storage location. For example, the sensor could be a pyrometer, which measures the temperature of the substrate or a surface temperature of the susceptor assembly. This temperature can then be used to control a heating device, regulating the measured temperature against a setpoint. A process gas, consisting of one or more reactive components, is fed into the process chamber of the CVD reactor. 31324R6PCT - 11.09.2025 gases. These reactive gases or their decomposition products can also reach the surface of the window, forming a deposit that reduces the window's transparency.

[0176] It is therefore necessary to clean the window at regular intervals using a cleaning gas. For this purpose, the cleaning gas is introduced via a gas supply line to the vicinity of the inside of the window. The cleaning gas can remove at least some of the deposits.

[0177] The invention is based on the objective of improving this cleaning method or such a device for cleaning the inside of a window.

[0178] A reactor opening being purged with a purge gas is shown in US 7,534,469 A and WO 2023 / 194371 Al.

[0179] The problem is solved by the invention specified in the claims, and in particular in claims 22 and 23. The dependent claims not only represent advantageous further developments of the invention specified in the dependent claims, but also independent solutions to the problem.

[0180] It is proposed that the cleaning gas contain at least one halogen. For this purpose, the gas mixing system has a source for the halogen. Specifically, it is envisaged that the gas mixing system includes a source, for example, a container, in which gaseous chlorine is stored. However, it is also envisaged that the gas mixing system includes a source for HCl. The halogen, in particular chlorine or HCl, is used as the cleaning gas and is supplied to the inside of the window via the gas line for cleaning the... 31324R6PCT - 11.09.2025 The gas mixture system is applied to the inside of the window. For this purpose, it has at least one valve and one mass flow regulator to control the mass flow of the cleaning gas.

[0181] The use of a halogen, especially chlorine or HCl, is particularly advantageous if layers of elements from groups III and V, such as GaN, GaAl, InP, or mixed crystals, have previously been deposited in the CVD reactor. This selection of purification gases has proven to be highly efficient.

[0182] Figure 5 shows an embodiment of the invention, wherein the gas supply line 40 is connected to a gas source in which a halogen, in particular chlorine or HCl, is provided. During the deposition of a layer, a purge gas can flow through the gas supply line 40, so that the gas supply line is a purge gas supply line 40. The purge gas can be hydrogen. By means of valves (not shown), the cleaning step can be carried out after the substrates have been removed from the process chamber, in which the purge gas is replaced by the cleaning gas. 9. CVD reactor with a process chamber with cover plates of varying material thicknesses to influence the process chamber height.

[0183] The invention relates to a device for depositing layers onto one or more substrates, in which a process chamber is arranged in a housing, the process chamber having a process chamber ceiling and a process chamber floor, wherein the process chamber floor is formed by a susceptor arrangement having storage places for substrates that are to be thermally treated in the device, for example, a semiconductor layer is to be deposited onto the substrates. A gas inlet device is used to introduce the necessary gases. 31324R6PCT - 11.09.2025 A process gas is fed into the process chamber, particularly through several vertically arranged gas inlet zones. The process gas flows through the process chamber and exits through a gas outlet. The vertically arranged gas inlet zones allow different reactive gases of the process gas to be fed into the process chamber separately. A portion of the process gas fed in through the lowest gas inlet zone forms a natural diffusion barrier for another portion of the process gas fed into the process chamber through a higher gas inlet zone.

[0184] The susceptor assembly is heated to a process temperature by means of a heating device. The process gas flowing into the process chamber through the gas inlet is heated. Depending on the type of reactive gas, for example, whether it is a hydride of an element from group V or a metal-organic compound of an element from group III, the reactive gas has a different thermal stability. The more thermally stable reactive gas is therefore fed in through the lowest gas inlet zone, while a more thermally unstable gas, such as the metal-organic compound, is fed in at a higher vertical level. This prevents decomposition products of the less stable gas from depositing on the surface of the susceptor or a cover plate covering the susceptor in a pre-treatment zone upstream of a growth zone containing the one or more substrates.

[0185] On the other hand, the metal-organic compound must be available in sufficient quantity in the growth zone so that, for example, a III-V layer can be deposited on the substrate. It is therefore a particular challenge to design the geometry of the process chamber accordingly. 31324R6PCT - 11.09.2025 to design the system so that the flow is as laminar as possible and the reactants are available in sufficient quantity in the growth zone on the surface of the substrate.

[0186] The partial pressure of the reactive gases and their decomposition products within the process chamber decreases in the direction of flow due to the condensation of these products on the surface. To nevertheless deposit a homogeneous layer on the substrates, the substrate holders on which the substrates rest are rotated around a vertical axis. A prerequisite for depositing a layer with a uniform thickness across its entire surface is a linear depletion curve of the reactant concentration in the direction of flow above the substrate, i.e., in the growth zone. In particular, the concentration of an element from group III must decrease linearly across the entire growth zone. Edge effects were also observed on layers deposited on the substrates, which are attributable to a flow profile within the process chamber.

[0187] The flow profile within the flow channel formed by the process chamber depends on the one hand on its geometry and on the other hand on the flow velocities and, in particular, the mass flows of the gases that are fed into the process chamber through the various gas inlet zones. Since the gases heat up as they pass through the process chamber, and especially at the bottom near the susceptor assembly, more so than at the slightly cooler top of the process chamber, high turbulence can occur if the flow velocity or the process chamber volume is too low; this turbulence should be avoided. 31324R6PCT - 11.09.2025

[0188] Different materials, especially feedstocks introduced into the process chamber as reactive gases, require different process chamber temperatures. Consequently, different material pairings of feedstocks may also necessitate different optimal flow channel geometries.

[0189] Furthermore, there is evidence that the course of the concentration decrease of the reactants in the growth zone can be influenced not only by height differences of the process chamber in the direction of flow, but also by height differences of the process chamber perpendicular to the direction of flow.

[0190] The invention is based on the objective of providing means by which the process chamber can be adapted to changing hydromechanical conditions.

[0191] The problem is solved by the invention specified in the claims, and in particular in claims 24 and 25. The dependent claims not only represent advantageous further developments of the invention specified in the dependent claims, but also independent solutions to the problem.

[0192] First and foremost, it is proposed that the height of the process chamber be adjusted by the type of cover plates resting on the susceptor. Cover plates with different effective material thicknesses can be used, or they can have a top surface facing the process chamber that has different vertical distances from a bottom surface that supports the susceptor. For example, the top surface facing the process chamber can be... 31324R6PCT - 11.09.2025 The top surface of the cover plate lies in a single plane, while the underside is profiled or only supported at a few points on the susceptor. Hereinafter, the term "material thickness" refers to the effective material thickness with which the process chamber height can be locally altered by appropriately selecting a cover plate. Additionally, the process chamber height can also be influenced by a suitable structuring of the process chamber ceiling. Thus, "material thickness" refers specifically to the distance between the support area where the cover plate rests on the susceptor and the free surface of the cover plate, and more generally, to the vertical level of the free surface of the cover plate relative to another cover plate.

[0193] The process chamber can be rectangular. A gas inlet can be arranged at one edge of the process chamber, from which the process gas exits and flows along parallel streamlines to a gas outlet located at the opposite edge of the process chamber. Alternatively, the process chamber can be circular, surrounding a gas inlet located in the center of the process chamber, from which the process gas flows along star-shaped streamlines to a gas outlet surrounding the process chamber. In both cases, cover plates with varying distances of their free upper surfaces from the susceptor, for example, with different material thicknesses, can be arranged one behind the other in the direction of flow. For example, a different process chamber height can be set using cover plates arranged in front of the substrates in the direction of flow than with cover plates arranged behind the substrates in the direction of flow. 31324R6PCT - 11.09.2025

[0194] In a preferred embodiment, a multitude of substrates are arranged side by side in a circular arrangement surrounding the gas inlet element. Here, it can be provided that adjacent cover plates also define different process chamber heights.

[0195] It is also possible for a cover plate to have a structured free surface rather than a flat one; for example, the free surface of the cover plate may be curved. The curvature may extend circumferentially, so that the surface of the cover plate has the shape of a shallow channel in the flow direction. The process chamber height may be reduced in the region of an edge of the substrate. The process chamber height may have a minimum in the midpoint between two circumferentially adjacent substrates. The process chamber height may have a maximum along a flow line passing through the center of the substrate.It is also provided that the process chamber height has a minimum along a flow line passing through the center of the substrate and rises to a maximum in the azimuthal direction in an area located between two adjacent substrates. In particular, it is provided that the height structure of the upper surface of the cover plates, relative to a line connecting the center of the gas inlet element with the center of the substrate, is flap-symmetrical and, for example, has a rounded shape.

[0196] However, it can also be designed so that the material thickness of the cover plates changes continuously in the direction of flow, for example, steadily decreasing or increasing in a gas inlet zone between the gas inlet device and a growth zone where the substrate is located. It can also be designed to 31324R6PCT - 11.09.2025 The material thickness of the cover plates located downstream of the substrate changes continuously in the direction of flow. Here too, as with the material thickness profile in the azimuthal direction, the surface of the cover plate can exhibit a curvature or form an inclined plane.

[0197] It is considered advantageous that the process chamber height can be locally adjusted to the hydromechanical conditions required for optimal process control simply by exchanging cover plates with different material thicknesses or height structures.

[0198] Exemplary embodiments of the invention are described below with reference to Figures 32 to 36. These show: Fig. 32 shows the top view of the cover plates 15, 16, which rest on a susceptor 14, Fig. 33 shows the section along line XXXIII-XXXIII in Figure 32 of a first embodiment, Fig. 34 shows a representation according to Figure 33 of a second embodiment, Fig. 35 shows the view in the direction of arrow XXXV, Fig. 36 shows a representation according to Figure 33 of a third embodiment. 31324R6PCT - 11.09.2025

[0199] In the exemplary embodiments, a gas inlet element 6 is located in the center of a process chamber 12, which has a process chamber ceiling 13 with a flat underside. The cover plates 15, 16 rest on a flat upper surface of the susceptor 16 with a support area formed by the underside of the cover plate 15, 16. Due to varying distances between the free surface of the cover plates 15, 16 facing the process chamber 12 and the upper surface of the susceptor 16 (i.e., the support area), the height of the process chamber H1, H2, H3 can be configured differently in various areas. Without cover plates, the distance between the upper surface of the susceptor 16 and the underside of the process chamber ceiling is the same everywhere.By selecting suitable cover plates 15, 16 with different material thicknesses 170, 171, 172, the process chamber height H1, H2, H3 can be changed by simply exchanging cover plates 15, 16 and adapted to specific requirements for optimizing the flow profile of the gas flow in the process chamber 12.

[0200] In the embodiment shown in Figure 33, the cover plates are depicted as being made of solid material. However, the cover plates 15, 16 can also have a different cross-section. The cover plates 15, which are closest to the gas inlet element 6, have a material thickness 170, which is greater than the material thickness 171 of the cover plates 16 located downstream of the substrate 21 or the substrate holder 20 supporting the substrate 21. Viewed in the direction of flow, the process chamber has three distinct zones, each with a different process chamber height H1, H2, H3. The height H1 measured above the inner cover plate 15 is less than the height H3 measured above the outer cover plate 16. The heights H1 and H3 are also greater than the height H2 above the substrate. In this embodiment, the surfaces of the cover plates 15, 16 facing the process chamber ceiling 13 run on planes that 31324R6PCT - 11.09.2025 parallel to a flat top surface of the susceptor 14 or a flat bottom surface of the process chamber ceiling 13.

[0201] In the embodiment shown in Figure 34, the upper surfaces of the cover plates 15, 16 facing the process chamber 12 have a height structure that deviates from a flat surface. The cover plates 15, which are immediately adjacent to the gas inlet element 6, have a considerable material thickness 170 in their upstream region, so that the process chamber height Hl' is minimal in this area. The height of the process chamber 12 increases in the direction of flow. The surface of the cover plate 15 slopes downwards in the direction of flow. The surface is curved. The material thickness of the inner cover plate 15 reaches a minimum at its edge adjacent to the substrate 21. At the edge adjacent to the substrate 21, the process chamber 12 has a height Hl", which corresponds approximately to the height H2 that the process chamber 12 has above the substrate 21. Between the two edges, the process chamber 12 has a height Hl.

[0202] The radially outer cover plate 16 has a material thickness 171, which has a minimum at the edge of the cover plate 16 adjacent to the substrate 21 and then, like the inner cover plate 15, does not run linearly in the flow direction. While the material thickness of the inner cover plate 15 decreases in the flow direction, the material thickness of the radially outer cover plate 16 increases in the flow direction. Here, too, the process chamber 12 has a process chamber height H3' at the edge adjacent to the substrate 21, which corresponds to the process chamber height H2 above the substrate 21. The process chamber height H3 then decreases until it reaches a minimum H3" at the outermost edge of the susceptor arrangement 14, 15, 16. 31324R6PCT - 11.09.2025

[0203] The previously described embodiments show that the cover plates 15, 16 can have a characteristic profile extending in the direction of flow.

[0204] Figure 35 shows that the cover plates 15, 16 can also be profiled transversely to the flow direction. Only the cross-sectional profile of the radially inner cover plate 15 is shown here. The radially outer cover plate 16 can, however, have a similar cross-sectional profile. Crucially, the material thickness 170 of the cover plate 15, 16 has a minimum at its center, where a flow line passes through the center of the substrate 21. From this center, the material thickness increases towards both sides. In the exemplary embodiment, the cross-sectional line of the upper surface follows a curved line. In a region of a flow line that passes approximately centrally through an intermediate zone between two substrates 21, particularly along an edge of the cover plates 15, 16 extending in the flow direction, the material thickness 171 of the cover plates 15, 16 has a maximum.

[0205] Figure 36 shows an embodiment in which the cover plates 15, 16 are supported by feet 173, 174. The feet 173, 174 can have different heights, so that the height H1, H3 of the process chamber in the radially inner region and in the radially outer region is defined not only by the thickness of a solid body, each forming a cover plate 15, 16, but also by the height of one or more feet 173, 174, which are supported on the top of the susceptor 14 and on which the solid bodies are arranged. 31324R6PCT - 11.09.2025

[0206] According to the invention, the height of the process chamber 12 can be locally changed by modifying the configuration of the process chamber 12 with different cover plates 15, 16. This increases the application range of a CVD reactor because different material pairings in the reactive gases require differently shaped flow channels. 10. CVD reactor with a process chamber ceiling consisting of several vertically movable elements

[0207] The invention relates to a device for depositing layers onto one or more substrates, in which a process chamber is arranged in a housing. The process chamber chamber has a ceiling and a floor, the floor forming a susceptor arrangement on which storage areas for substrates are located. In the device, the substrates are thermally treated; for example, a semiconductor layer is deposited onto the substrates. A gas mixing system provides a process gas, consisting of one or more reactive gases, which is fed into the process chamber through gas outlet openings of a gas inlet device. The different reactive gases are fed into the process chamber through vertically stacked gas inlet zones.Part of the process gas, which is fed in through a lowest gas inlet zone, forms a diffusion barrier for another part of the process gas, which is fed into the process chamber through a gas inlet zone above it.

[0208] The susceptor assembly is heated to a process temperature by means of a heating device. The process gas flowing into the process chamber through the gas inlet is heated. Depending on the type of reactive gas, for example, whether it is a hydride of an element from group V or 31324R6PCT - 11.09.2025 Since the reactive gas is a metal-organic compound of an element from group III, it has a different thermal stability. Therefore, the more thermally stable reactive gas is fed in through the lowest gas inlet zone, while a more thermally unstable gas, such as the metal-organic compound, is fed in at a higher vertical level. This prevents decomposition products of the less stable gas from depositing on the surface of the susceptor or a cover plate covering the susceptor in a pre-flow zone upstream of a growth zone containing the one or more substrates.

[0209] On the other hand, the metal-organic compound must be available in sufficient quantity in the growth zone so that, for example, a III-V layer can be deposited on the substrate. It is therefore a particular challenge to design the geometry of the process chamber in such a way that the flow is as laminar as possible and the reactants are available in sufficient quantity in the growth zone on the surface of the substrate.

[0210] The partial pressure of the reactive gases or their decomposition products within the process chamber decreases in the direction of flow due to the condensation of the decomposition products on the surface. To nevertheless deposit a homogeneous layer on the substrates, the substrate holders on which the substrates rest are rotated around a vertical axis. A prerequisite for depositing a layer with a uniform thickness across its entire surface is a linear depletion curve of the reactant concentration in the direction of flow above the substrate, i.e., in the growth zone. In particular, the concentration of an element from group III must decrease linearly across the entire surface. 31324R6PCT - 11.09.2025 The entire growth zone falls away. Edge effects were also observed on layers deposited on the substrates, which are attributed to a flow profile in the process chamber.

[0211] The flow profile within the flow channel formed by the process chamber depends on the one hand on its geometry and on the other hand on the flow velocities and, in particular, the mass flows of the gases that are fed into the process chamber through the various gas inlet zones. Since the gases heat up as they pass through the process chamber, and especially at the bottom near the susceptor assembly, more so than at the slightly cooler top of the process chamber, high turbulence can occur if the flow velocity or the process chamber volume is too low; this turbulence should be avoided.

[0212] Furthermore, the molecular weight of the gases also influences the mass transport perpendicular to the flow direction and thus the growth rate of a layer on the substrate.

[0213] Different materials, especially feedstocks introduced into the process chamber as reactive gases, require different process chamber temperatures. Consequently, different material pairings of feedstocks may also necessitate different optimal flow channel geometries.

[0214] Furthermore, there is evidence that the course of the reactant concentration decrease in the growth zone is not only determined by altitude- 31324R6PCT - 11.09.2025 The process chamber can be influenced not only by differences in the direction of flow, but also by differences in height of the process chamber perpendicular to the direction of flow.

[0215] The invention is based on the objective of providing means by which the process chamber can be adapted to changing hydromechanical conditions.

[0216] The problem is solved by the invention specified in the claims, and in particular in claims 26 to 28. The dependent claims not only represent advantageous further developments of the invention specified in the dependent claims, but also independent solutions to the problem.

[0217] First and foremost, it is proposed that the process chamber ceiling comprises process chamber ceiling elements that are displaceable, at least in the vertical direction. The susceptor assembly can include a susceptor that can be rotated about a vertical axis. The plane of rotation in which the susceptor rotates is fixed relative to the housing. A non-rotatable susceptor has a plane of extension, which may be a horizontal plane. The process chamber ceiling elements can be displaced relative to this plane, or relative to the housing, such that the process chamber height can be changed locally. The process chamber ceiling elements can be arranged in a ring around a gas inlet located in the center of the process chamber. The process chamber ceiling elements can be arranged side by side in the circumferential direction and be individually adjustable in the vertical direction.This can be achieved using an actuator, such as a stepper motor. 31324R6PCT - 11.09.2025 Vertical adjustment can also be performed manually, for example, using adjusting screws. It is also possible for the one or more vertically adjustable process chamber ceiling elements to be arranged one behind the other in the direction of flow, so that the height of the flow channel can be varied in the direction of flow. Here, too, it is possible for the vertical adjustment to be made outside the housing. In this case, it is even possible for the process chamber ceiling elements to be adjusted during a deposition process in which layers with different compositions are deposited onto the substrate.

[0218] The invention thus also relates to a method for depositing layers in which, in an intermediate time between the depositing of two layers or even during the depositing of one layer, at least one process chamber ceiling element is vertically displaced.

[0219] Exemplary embodiments of the invention are explained below with reference to Figures 37 to 40. These show: Fig. 37 shows a cross-section through a process chamber 12, Fig. 38 shows a top view of a process chamber arrangement according to arrow XXVIII in Figure 37 of a first embodiment, Fig. 39 shows a representation according to Figure 38 of a second embodiment, 31324R6PCT - 11.09.2025 Fig. 40 shows a representation according to Figure 38 of a third embodiment.

[0220] In the embodiments shown in Figures 37 to 40, the process chamber ceiling 3 consists of several process chamber ceiling elements 181, 183, 185. Each of these process chamber ceiling elements can be adjusted vertically to change the height H1, H2, H3 of the process chamber 12. This can be done with an actuator 180, 182, 184. The actuators can be arranged outside the housing of the CVD reactor. Alternatively, they can be arranged inside the housing. The actuators can have stepper motors, so that the vertical height of the process chamber H1, H2, H3 can be changed by adjusting the process chamber ceiling elements 181, 183, 185 even during a deposition process, for example, when a layer with a different composition is to be deposited on a substrate.The actuator 180, 182, 184 can also be an adjusting screw, by turning which the vertical position of the process chamber ceiling element 181, 183, 185 can be changed relative to the susceptor arrangement 14, 15, 16.

[0221] Figure 38 shows an embodiment in which the process chamber ceiling elements 181, 183, 185 have a ring shape. Several ring-shaped process chamber ceiling elements are arranged around an inlet element 6 located in the center of the process chamber 12, which has a plurality of vertically arranged gas distribution chambers 8, into each of which a different reactive gas can be fed, so that the process gas flows into the process chamber 12 as vertically layered individual gas flows. 31324R6PCT - 11.09.2025

[0222] Figure 39 shows an embodiment in which the process chamber ceiling elements 181, 183, 185 are additionally separated in the azimuthal direction, i.e., circumferentially around the gas inlet element 6. The annular process chamber ceiling elements shown in Figure 38 are here divided according to the number of storage locations for substrates 21 extending in a circular arrangement around the center of the process chamber 12, so that each of the several storage locations is individually assigned several process chamber ceiling elements 181, 183, 185. With this arrangement, the flow profile can be individually optimized for each of the substrates 21 by changing the process chamber height H1, H2, H3.

[0223] Figure 37, referenced at 186, shows the concentration profile of a decomposition product of one of the reactive starting materials, which is significant for the growth rate of the layer. In a pre-flow zone between the gas inlet 6 and the substrate holder 20, the availability of a decomposition product that has a layer-forming effect increases sharply until it reaches a maximum value. The concentration curve should then decrease as linearly as possible above the substrate 21 in order to produce a layer of homogeneous thickness, especially with respect to the substrate rotating during the deposition process.

[0224] With the device described above, the profile of the flow channel through which the process gas flows, and thus also the concentration profile 186 of one of the reactive gases or a component of this reactive gas above a growth zone extending over the substrates 21, can be optimized such that the concentration decreases linearly in the direction of flow. In a particularly preferred embodiment, it is even possible to optimize the concentration profile for each storage location, for example, for each substrate holder 20 on which one or more substrates 21 rest. 31324R6PCT - 11.09.2025 optimize. In the method according to the invention, the profile of the flow channel can be changed during a deposition process.

[0225] Figure 40 shows an embodiment in which each of the storage places for the one or more substrates 21 is locally assigned only one process chamber ceiling element 181. 11. CVD reactor with process chamber elements that can be individually removed from the reactor housing

[0226] The invention relates to a device and a method for depositing layers onto one or more substrates, comprising a process chamber ceiling and a process chamber floor arranged in a housing for receiving the substrates. A robot gripper arm can reach into the interior of the housing through a closable loading / unloading opening in a wall of the reactor housing to load or unload the susceptor with substrates. The gripper arm can directly handle the substrates. However, it is also possible to grip support rings or plates on which one or more substrates rest. The invention is based on the objective of providing measures by which parts of the process chamber can also be exchanged during loading / unloading.

[0227] The problem is solved by the invention specified in the claims, in particular claims 29 and 30.

[0228] First and foremost, a mechanical coupling of a process chamber ceiling element with a susceptor element arranged below the process chamber ceiling element is provided. In this As- 31324R6PCT - 11.09.2025 According to the invention, the process chamber can consist of process chamber ceiling elements arranged side by side in the circumferential direction. It is not necessary for several process chamber ceiling elements to be arranged one behind the other in the flow direction. The essential point is that the process chamber ceiling element and the susceptor element are connected to each other, for example via connecting elements, such that an ensemble consisting of a process chamber ceiling element with an associated susceptor element can be removed from the housing of the CVD reactor. The assembly can be removed from the housing and reinserted for loading / unloading the process chamber with substrates. Preferably, the process chamber ceiling element and the associated susceptor element extend over an identical azimuthal angle.Each of these units, consisting of a process chamber ceiling element and a susceptor element, can additionally include a gas outlet element extending over the respective azimuthal angle. In this embodiment, the gas outlet element can consist of a plurality of gas outlet elements arranged one behind the other in the azimuthal direction, which are separable from one another.

[0229] Exemplary embodiments of the invention are explained below with reference to Figures 41 to 44. These show: Fig. 41 shows a cross-section through a process chamber 12, Fig. 42 shows a top view of a process chamber arrangement, Fig. 43 shows a representation according to Figure 41 of a second embodiment, and 31324R6PCT - 11.09.2025 Fig. 44 shows a representation according to Figure 41 of a third embodiment.

[0230] Figures 41 to 44 illustrate an invention which is an optimization of the loading and unloading of the process chamber with substrates 21.

[0231] The process chamber ceiling 13 consists of several process chamber ceiling elements 191 arranged circumferentially around the gas inlet device 6, wherein each storage location for one or more substrates 21 and in particular each substrate 21 or substrate holder 20 is assigned a process chamber ceiling element 191.

[0232] The susceptor 14 has susceptor elements 190, with one susceptor element 190 assigned to each storage location or substrate 21. As in the previously described embodiments, the number of process chamber ceiling elements 191 can correspond to the number of storage locations for each substrate 21 or to the number of substrate holders 20 on which one or more substrates 21 are located. The number of susceptor elements 190 can correspond to the number of process chamber ceiling elements 191.

[0233] The process chamber ceiling elements 191 lie congruently on each susceptor element 190. The respective process chamber ceiling element 191 is connected to the susceptor element 190 below it by connecting elements 192, 193, so that each process chamber ceiling element 191 with a susceptor element 190 can be removed as a unit from the housing 2 of the CVD reactor 1, for example through a loading / unloading opening 44, and can also be reinserted into the housing 2 through this loading / unloading opening 44. 31324R6PCT - 11.09.2025

[0234] The connecting elements 192, 193 can be connecting rods that extend in a vertical direction between susceptor element 190 and process chamber ceiling elements 191.

[0235] In the embodiment shown in Figures 43 and 44, the gas outlet element 18 is additionally divided into several gas outlet elements 194. Each of the previously described ensembles, consisting of a process chamber ceiling element 191 and a susceptor element 190, is locally assigned a gas outlet element 194, so that the unit removable from the housing 2 also has a gas outlet element 194. The individual elements 191, 190, 194, which extend over a circular segment, together form a circular object. Several arc-shaped gas outlet elements 194 are provided, which are separate from one another and, in an assembled state, form a gas outlet element 18 extending along a circular arc.

[0236] The device described above can shorten a cleaning step in which the process chamber is cleaned by introducing a cleaning gas, by combining the susceptor element 190, the process chamber ceiling element 191 and, optionally, the gas outlet element. 12. Process chamber of a CVD reactor with several vertically stacked gas outlet devices

[0237] The invention relates to a device for depositing layers onto one or more substrates. A process chamber is located in a housing, with a process chamber ceiling that limits the process chamber from above and a susceptor arrangement that limits the process chamber from below and has storage places for placing substrates which are in the 31324R6PCT - 11.09.2025 The device is thermally treated. A process gas, supplied by a gas mixing system and containing one or more reactive gases and at least one carrier gas, is fed into the process chamber via a gas inlet device. Reaction products exit the process chamber through a gas outlet device located at the vertical level of the susceptor assembly.

[0238] In such a CVD reactor, the reactive gases are fed separately into the process chamber through vertically stacked gas inlet zones. A key requirement for process control in the deposition of semiconductor layers onto substrates is achieving consistent homogeneity of both layer composition and layer thickness across the entire substrate surface. The hydromechanical flow profile within the process chamber has a significant influence on this homogeneity.

[0239] The invention is therefore based on the objective of specifying measures by which the flow profile can be influenced.

[0240] The problem is solved by the invention specified in the claims, and in particular in claims 31 to 35. The dependent claims not only represent advantageous embodiments of the invention specified in the dependent claims, but also independent solutions to the problem.

[0241] The first and main proposal is that a second gas outlet device be provided. This second gas outlet device should be located at a different vertical height. 31324R6PCT - 11.09.2025

[0242] Each of the two gas outlet devices creates a negative pressure at a different vertical height. This negative pressure is capable of influencing the flow profile within the process chamber. The CVD reactor can be a so-called horizontal reactor, in which the process chamber has a rectangular footprint, with the gas inlet and gas outlet devices positioned opposite each other. Preferably, the CVD reactor is a so-called planetary reactor, in which the process chamber surrounds a central gas inlet device, such that the two gas outlet devices form a ring around the process chamber. It is particularly preferred if the second gas inlet device is located at the vertical height of the process chamber ceiling. The second gas outlet device, like the first gas outlet device, can have a gas collection channel that extends over the entire circumference of the gas outlet device.While the gas outlet openings of the first gas outlet, which connect the gas collection channel to the process chamber, are located above the gas collection channel, the gas outlet openings of the second gas outlet can be located below the gas collection channel. It is particularly advantageous if each of the two gas outlets is connected to an individual exhaust port for discharging the exhaust gases. A throttle valve and a pressure sensor can be installed in each of these ports. The throttle valve allows the gas flow through the ports to be controlled. The pressure sensor allows a negative pressure to be set, which can then be used to influence the flow profile in the process chamber. The two ports can be connected to the same pump. However, it is also possible to have two or more pumps, with each port connected to a different pump.

[0243] It may also be provided that the second gas outlet device is vertically displaceable relative to the first gas outlet device 18. Actuators, such as stepper motors, may be provided for this purpose. 31324R6PCT - 11.09.2025

[0244] The invention further relates to a method by which the flow profile within the process chamber is influenced by varying the gas flow through the drains.

[0245] According to a further aspect of the invention, the susceptor assembly can optionally be lowered with a heating device that heats the susceptor assembly to a process temperature. At a lower vertical level, the housing wall of the reactor housing can have a loading / unloading opening that is closed by a door. With the door open, the gripper arm of a robot can engage in the reactor housing to load the susceptor assembly with substrates or substrate holders.

[0246] The invention further relates to a method for loading and unloading a process chamber in which the susceptor assembly is lowered. The susceptor assembly is lowered below the vertical level of the lower gas outlet device.

[0247] Exemplary embodiments of the invention are explained below with reference to Figures 45 to 49. These show: Fig. 45 in a representation according to Figure 1 or 6 shows a first embodiment of the invention, in which a second gas outlet 200 is arranged above a first gas outlet 18, Fig. 46 shows a representation according to Figure 45 of a second embodiment, 31324R6PCT - 11.09.2025 Fig. 47 schematically represents a gas drainage system, Fig. 48 shows a variant of the gas drainage system shown in Figure 47, Fig. 49 shows a representation according to Figure 45 of a variant in which the second gas outlet device 200 can be moved vertically with an actuator 209.

[0248] According to the invention, in an embodiment illustrated in Figures 1, 6, or 9, a second gas inlet element 200 can be provided in addition to a lower gas inlet element 18. This second gas inlet element 200 is arranged at a different vertical level relative to the lower gas inlet element 18, and in particular, is arranged above the lower gas inlet element 18. In these embodiments, the second gas outlet element 200 is arranged at the level of the process chamber ceiling 13.

[0249] According to an alternative, the second gas outlet device 200 can also be adjusted in a vertical direction.

[0250] The second gas outlet device 200 can have essentially the same shape as the first gas outlet device 18. In both the first gas outlet device 18 and the second gas outlet device 200, the gas outlet openings 19, 202, which connect the volume of the process chamber 12 with a gas collecting channel 201 each, can lie in a plane in which the floor of the process chamber or the ceiling of the process chamber 12 extends. 31324R6PCT - 11.09.2025

[0251] The second gas outlet device 200, like the first gas outlet device 18, can surround the process chamber 12 in a circular fashion.

[0252] The gas collection channels 201 of the two gas outlet devices 18, 22 can each be connected to separate lines 203, 204, through which the exhaust gases from the first gas outlet device 18 and from the second gas outlet device 22, respectively, can be extracted. For this purpose, the two lines 203, 204 are connected to a pump 207 (Figure 47) or each to a separate pump 207, 208 (Figure 48). A pressure sensor 210 (not shown) and a throttle valve 205, 206 can be arranged in each of the two lines 203, 204. The throttle valves are connected to the control unit 11. The control unit 11 can include a control device with which the throttle valves 205, 206 are actuated such that a negative pressure in the respective gas collection channel 201 is maintained at a setpoint value.

[0253] By appropriately setting this negative pressure, the flow profile within the process chamber 12 can be influenced.

[0254] Figure 47 shows a variant of the embodiment illustrated in Figure 46, in which an arrangement consisting of the susceptor 14, cover plates 15, 16 resting on the susceptor 14, a substrate holder 20, and a substrate 21 resting on the substrate holder 20 can be lowered from a process position (see Figure 45) to a loading / unloading position. In this loading / unloading position, a loading / unloading opening 44 can be opened so that a substrate 21 or a substrate holder 20 can be removed from the susceptor 14 by means of the gripper 49. 31324R6PCT - 11.09.2025

[0255] Figure 49 shows an embodiment with a gas outlet device 200 that has a ring shape. In this embodiment, the gas outlet openings 202 are arranged on a vertically extending side wall, specifically on the radially inwardly directed side wall.

[0256] The vertical position of the gas outlet element 200 can be changed by means of an actuator 209, which may be a servo motor or an adjusting screw. The gas outlet element 200 can thus be arranged at various vertical positions between the process chamber ceiling 13 and the susceptor 14 in order to influence the flow profile. 13. Process chamber of a CVD reactor with a large number of individually heated substrate holders

[0257] The invention relates to a device for depositing layers onto one or more substrates. The device includes a susceptor assembly comprising at least two substrate holders, each holding at least one substrate. The substrate holders can be driven, in particular, by rotation about an axis of rotation. For this purpose, they can be located in a pocket of the susceptor into which a gas is supplied, forming a gas cushion on which the substrate holder floats and which rotates the substrate holder. A heating device is provided for heating the substrates or the process chamber to a process temperature at which reactive gases or decomposition products of the gases, supplied to the process chamber via a gas inlet device, deposit a layer onto the substrates. Measuring devices are provided for measuring the temperature of the substrate holder or the substrate.A control device can maintain this temperature at a setpoint by varying the heating power fed into the heating system. 31324R6PCT - 11.09.2025

[0258] The process chamber can be rectangular. A gas inlet can then extend along one edge of the rectangle. A gas outlet can extend along the opposite edge. The process chamber can also be circular with a gas inlet located in the center and a gas outlet surrounding the chamber. The gas inlet can also be formed from the ceiling of the process chamber in the form of a showerhead.

[0259] Prior art has already implemented measures, such as injecting gases with different thermal conductivities into the pocket used to create the gas cushion, to individually adjust the substrate holder temperature or the substrate temperature of the substrates resting on the substrate holders when multiple substrate holders are arranged in a process chamber. Another way to individually vary the substrate temperature is by varying the vertical height of the gas cushion.

[0260] The invention is based on the objective of providing a simple way to individually vary the substrate temperature.

[0261] The problem is solved by the invention specified in the claims and in particular in claims 36 to 38, wherein the dependent claims are not only advantageous further developments of the invention specified in the subordinate claims, but also independent solutions to the problem.

[0262] First and foremost, it is proposed that each substrate holder be assigned its own heating element, which can be individually controlled by the control unit to a predefined temperature. A preferred 31324R6PCT - 11.09.2025 An embodiment of this invention has a susceptor that remains stationary at least during operation of the CVD reactor for layer deposition. It may be possible to rotate the susceptor stepwise into unloading positions for loading and unloading.

[0263] As in the prior art, the substrate holders can rest on a gas cushion that rotates them. However, it is also possible to use other means to rotate the substrate holders. For example, the substrate holder can be driven by a gear drive. Such a mechanical drive can be located below the susceptor. It can have a drive gear whose teeth mesh with a mating gear in the substrate holder. Alternatively, each substrate holder can be individually driven by another means.

[0264] The heating elements can be coils. Alternatively, they can be lamps or IR emitters. These heating elements can generate thermal radiation. It is also possible for the coil to generate an alternating electromagnetic field (RF field) that induces eddy currents in the susceptor and / or the substrate holder.

[0265] The surface temperatures of the substrates are individually measured using measuring devices, which are primarily optical measuring devices and preferably pyrometers. For this purpose, the process chamber ceiling or the reactor housing ceiling can have openings through which an optical path runs. The optical path can also run through flexible light guides, such as optical fibers. Several flexible light guides can be functionally combined, for example with a multiplexer, to form a 31324R6PCT - 11.09.2025 The sensor array is connected so that temperatures on the different substrates can be measured sequentially through separate process chamber openings. The control unit then allows the heating elements to be individually supplied with heating power, ensuring that the surface temperature of each substrate can be regulated to a specific target temperature.

[0266] Exemplary embodiments of the invention are explained below with reference to the accompanying drawings. These show: Fig. 50 schematically shows a process chamber of a CVD reactor with several substrate holders 20 and a heating device 17 with heating elements 213 of a first embodiment, Fig. 51 schematically shows a section according to the arrows LI-LI in Figure 50, Fig. 52 schematically shows a section according to arrows LII-LII in Figure 50, Fig. 53 shows a heating device 213 of the embodiment, Fig. 54 shows a representation according to Figure 51 of a third embodiment, Fig. 55 shows a representation according to Figure 52 of the second embodiment. 31324R6PCT - 11.09.2025 Fig. 56 shows a section through a susceptor 14 of a third embodiment in which the substrate holders 20 are driven by a mechanical transmission.

[0267] The embodiment shown in Figures 50 to 53 is a so-called planetary reactor in which a plurality of substrate holders 20 are arranged in a circular arrangement around a central gas inlet element 6. In an embodiment not shown, the gas inlet element 6 is located in the ceiling of the process chamber and forms a showerhead.

[0268] Below the susceptor 14, which in the illustrated embodiment carries substrate holders 20 arranged only on a circular arc, a heating device 17 is arranged. In an embodiment not shown, the substrates can be arranged evenly distributed on the upper surface of the susceptor 14.

[0269] Each of the substrates 21, or each of the substrate holders 20, has its own functionally individual heating element 213 located below the substrate holder 20. The heating element 213 can be a coil, for example an RF coil, which generates heat within the substrate holder 20. However, the heating element 213 can also be an IR heater or a lamp heater. The heating element 213 shown in Figure 53 extends over a circular segment and is formed by a coil 214. The coil has an approximately triangular base. However, the coil 214 can also have a circular base.

[0270] The heating device 17, which may have several heating elements 213, can be arranged in a non-rotatable position in the housing 2 of the CVD reactor 1. 31324R6PCT - 11.09.2025 The susceptor 14, or a susceptor assembly comprising a susceptor 14 and having additional cover plates on the top of the susceptor 14, can be arranged in the housing 2 in a rotationally fixed manner. However, it can also be provided that the susceptor 14 or the susceptor assembly can be rotated stepwise into different loading positions for loading and unloading the process chamber with substrates 21.

[0271] The embodiment shown in Figures 54 and 55 is a so-called horizontal reactor, which has a process chamber with a rectangular base plan. In this embodiment, two substrate holders 20 are arranged side by side, with each substrate holder 20 having a circular coil 214 as a heating element 213.

[0272] The substrate holders 20 can be rotaryally driven in a planetary reactor. The rotary drive can be a gas cushion on which one substrate holder 20 floats.

[0273] Figure 56 shows an alternative rotary drive. A central gear 209 can be rotated by a rotary drive (not shown). The teeth of the gear mesh with the teeth of a smaller gear 208, which is non-rotatably connected to the substrate holder 20. The substrate holder 20 is inserted into an opening 207 in the susceptor 14, which is open both upwards and downwards.

[0274] Each of the heating devices 213 can be individually supplied with heating power by the control unit 11. An opening 26 can be arranged in a process chamber ceiling 13 above each of the substrates 21 or substrate holders 20. An optical path 25 runs through this opening 26. The opening 26 can also be an opening for a showerhead or the 31324R6PCT - 11.09.2025 The optical path 25 connects a measuring point on the surface of the substrate 21 to an optical sensor 22, which can be a pyrometer, with which the temperature of the substrate 21 can be measured individually. Means for deflecting the optical path can be provided, allowing the measuring point to move across the surface of the substrate 21 during the measurement in order to measure temperatures at different locations on the surface of the substrate 21 and to calculate an average value from these measurements.

[0275] The control unit 11 has a control device which is set up to supply power to a heating element 213 assigned to the substrate 21 using the temperature setpoint of each substrate 21 supplied by the optical sensor 22, such that the temperature is regulated against an actual value. 14. Process chamber of a CVD reactor in which an area of ​​the process chamber ceiling or floor is flexible

[0276] The invention relates to a device for depositing layers onto one or more substrates. A process chamber is located within a housing. The process chamber has a ceiling that defines its upper boundary and a susceptor assembly that defines its lower boundary and provides storage positions for substrates that are thermally treated within the device. A process gas, supplied by a gas mixing system and containing one or more reactive gases and at least one carrier gas, is fed into the process chamber via a gas inlet. Reaction products exit the process chamber through a gas outlet located at the vertical level of the susceptor assembly. 31324R6PCT - 11.09.2025

[0277] In such a CVD reactor, the reactive gases are fed separately into the process chamber through vertically stacked gas inlet zones. A key requirement for process control in the deposition of semiconductor layers onto substrates is achieving consistent homogeneity across the entire substrate surface, both in terms of layer composition and layer thickness. The hydromechanical flow profile within the process chamber has a significant influence on this homogeneity. The flow profile is also affected by the height profile of the flow channel formed by the process chamber.

[0278] US patent 2023 / 0265580 Al describes a CVD reactor with a process chamber that has a gas inlet zone whose height is variable.

[0279] CN 101748377 B describes a CVD reactor with a process chamber wall formed by a flexible element.

[0280] The invention is therefore based on the objective of specifying measures by which the flow profile can be influenced.

[0281] The problem is solved by the invention specified in the claims, and in particular in claims 39 to 41. The dependent claims not only represent advantageous developments of the dependent claims, but also independent solutions to the problem.

[0282] First and foremost, it is proposed that at least one The area of ​​the process chamber ceiling or floor is made of a flexible and / or bendable, possibly also stretchable, material. 31324R6PCT - 11.09.2025 The process chamber consists of a channel or is designed such that the angle of this area relative to a reference plane, for example, a horizontal plane, a plane of rotation of a rotatable susceptor, or a plane to which a gas outlet surface of a gas inlet device is perpendicular, can be adjusted. As a result of this measure, it is possible to lower or raise individual areas of the process chamber ceiling or floor without creating a step in the flow channel. Instead of a step, a ramp is created, or the angle of an existing ramp changes.

[0283] The area forming this ramp can be a flexible, elastic, and / or stretchable section. It can be made of a flexible material. It can be formed from a membrane. This deformable or ramp-forming section can connect the gas inlet device to a susceptor assembly, such that an inclined section of the bottom, immediately adjacent to the gas inlet device, can be angle-changed when a downstream section of the bottom is vertically displaced. For this purpose, it is particularly advantageous if one end of this section is fixed to the housing, for example, to a cover of the CVD reactor housing, to a gas inlet device, or to a fixed section of the susceptor. The other end is connected to a vertically displaceable area of ​​the process chamber ceiling or the bottom of the process chamber, for example, the susceptor.

[0284] An actuator, for example a servo motor with a gearbox, or even just an adjusting screw, can be provided, preferably from the outside, to allow a section of the floor or ceiling of the process chamber to be moved vertically. The section forming the ramp is then connected to this section. 31324R6PCT - 11.09.2025

[0285] The process chamber ceiling can have two zones separated by the ramp-forming area, which can be designed, for example, as rigid bodies. One of these rigid bodies can be displaced relative to the other by means of an actuator. Alternatively, both rigid bodies can be displaced relative to each other if multiple actuators are provided. Between the rigid bodies is the preferably flexible element, which can form an inclined section of the floor or the process chamber ceiling.

[0286] In an inventive method for depositing layers on one or more substrates, it can be provided that the height of the process chamber is changed during a deposition process in which one or more layers are deposited on the substrates or during a deposition step in which only one layer is deposited on the substrates, wherein the angle of a surface facing the process chamber changes at a section of the process chamber height.

[0287] Exemplary embodiments of the invention are described below with reference to Figures 57 to 61. These show: Fig. 57 shows a first embodiment in which, for example, a flexible element 220 is arranged between the gas inlet element 6 and the susceptor 14. Fig. 58 shows a second embodiment in which, for example, a flexible element 221 is arranged between the gas inlet device 6 and a section of the process chamber ceiling 13. 31324R6PCT - 11.09.2025 Fig. 59 shows a third embodiment in which the entire process chamber ceiling is formed by a flexible element 220, Fig. 60 shows a fourth embodiment in which the flexible element 223, 224 can assume two angles, Fig. 61 shows a fifth embodiment of the invention, in which the element 221 which changes its angular position is arranged between two rigid elements 225 and 227.

[0288] The CVD reactors depicted in the exemplary embodiments can be so-called horizontal reactors, which have a rectangular process chamber in plan view, in which a gas inlet element 6 extends along one side of the rectangle and a gas outlet element 18 extends along the opposite side of the rectangle. Alternatively, they can be so-called planetary reactors, in which a gas inlet element 6 is arranged in the center of a process chamber 12 that surrounds the gas inlet element 6.

[0289] In the first embodiment shown in Figure 57, the process chamber ceiling 13 is rigid. The susceptor 14, which carries the one or more substrates 21, surrounds the gas inlet element 6 in an annular shape. A gas stream flows from the gas inlet element through the process chamber 12 in one direction. The susceptor is formed by a rigid body that carries an upstream cover plate 15 and a downstream cover plate 16. The substrate 21 is located between the cover plates 15 and 16 and is supported by a substrate holder 20 as described above. The substrate holder 20 can be rotated during the deposition of the layers. 31324R6PCT - 11.09.2025

[0290] Between a lower section of the gas inlet element 6, for example a cooling element 29, or a lowermost gas distribution chamber 8, and the vertically displaceable susceptor 14 by means of an actuator 226, there is a ramp element 220. Its upstream end is fixed to the housing 2, for example to the gas inlet element 6, and its upstream end is attached to the susceptor 14. In a horizontal reactor, this element 220 can be a rigid body or several bodies that can slide relative to each other. In a planetary reactor, the element 220 can be configured in the same way. It is thus a ramp element 220 that is flexible with respect to its surface area.

[0291] According to a variant of the invention, this ramp element 220 can also be made of a flexible material and, for example, have a microstructure, such as a wave structure, that allows the ramp element 220 to change its surface area. As a result of this microstructure, the ramp element 220 is a stretchable element. Figure 57 shows, as an example, a wave-shaped profiled metal sheet that forms the ramp element 220.

[0292] When the actuator 226 raises or lowers the susceptor 14, an angle α of a surface of the element 220 pointing towards the process chamber 12 changes to a horizontal plane 234.

[0293] In the embodiment shown in Figure 58, a ramp element 221 is provided which can have the properties previously described with regard to the ramp element 220. This ramp element 21 is located between an upper section of the gas inlet device 6, for example 31324R6PCT - 11.09.2025 The ramp element 221 is connected above a gas distribution chamber 8 located at the top and to a rigid section 225 of a process chamber ceiling 13, which can be moved vertically by means of an actuator 226. When the rigid section 225 is raised or lowered, the angle α that the surface of the ramp element 221 facing the process chamber makes, for example, with respect to the rigid section 225 or to a horizontal plane 234, changes. In this embodiment, the ramp element 221 is a flexible or stretchable ramp element and can have the previously described wave structure. However, the microstructure can also have a trapezoidal cross-section or a zigzag cross-sectional line.

[0294] In the embodiment shown in Figure 59, the entire process chamber ceiling 13 is formed by a ramp element 222, which can have the aforementioned properties. An actuator 226 is attached to one end of the ramp element 222. The other end of the element 222 is fixed in position. Here, too, the angle α can be changed by vertically displacing the end of the ramp element 220. This angle is the inclination angle by which the entire process chamber ceiling 13 is inclined relative to a horizontal plane 234.

[0295] In the embodiment shown in Figure 60, an actuator 226 engages approximately in the middle of a ramp element according to the invention. The ramp element consists of two parts, namely element 223 and element 224, both of which are ceiling elements of the process chamber ceiling 13 and are connected to each other. An actuator 226 can engage at the connection point. One end of each of elements 223 and 224 is fixedly connected to the housing or to a part of the process chamber that is fixedly connected to the housing. However, it is also provided that 31324R6PCT - 11.09.2025 that another actuator can be attached at the downstream end of element 224 in order to also change the process chamber height there.

[0296] In the embodiment shown in Figure 61, the process chamber ceiling 13 has a first rigid process chamber ceiling element 225, which can be rigidly connected to the housing, for example, rigidly connected to the gas inlet device 6. Alternatively, the actuator 226 shown in Figure 61 can be provided to displace this section 225 in a vertical direction. An upstream end of a ramp element 221 is connected to this section 225. A downstream end of this ramp element 221 is connected to another rigid process chamber ceiling element 227 of the process chamber ceiling 13. This process chamber ceiling element 227 can also be vertically displaced by an actuator 226, so that when the relative height of the two process chamber ceiling elements 225, 227 changes, the angle α of the ramp element 221 changes. 15. Process chamber of a CVD reactor in which the susceptor or the process chamber ceiling can be brought into a position that shades a gas outlet opening of a gas inlet device.

[0297] The invention relates to a device and a method for depositing a layer onto one or more substrates. The device has a gas inlet element with several vertically arranged gas distribution chambers, each of which has a feed line through which a reactive gas, an inert gas, or a mixture of a reactive gas and an inert gas can be fed into the gas distribution chamber. For this purpose, the feed line is connected to a gas mixing system that supplies the gases. The gas distribution chambers each have gas outlet openings that lead into the process chamber. In such a CVD reactor 31324R6PCT - 11.09.2025 Semiconductor layers are deposited, particularly III-V semiconductor layers. Depending on the material pairing, different reactive gases are used. The reactive gases are fed separately into the process chamber through the gas outlet openings assigned to the various gas distribution chambers. The reactive gases mix within the process chamber. Reactive gases introduced at a higher vertical level must diffuse through one or more gas layers introduced at a lower vertical level to reach the substrate. For some material pairings, it is advantageous to introduce a V-compound through one gas distribution chamber at the bottom and another at the top, while a III-compound can be introduced into the process chamber through a middle gas distribution chamber.For other material pairings, however, it is more advantageous to use more than three gas distribution chambers. For example, additional gas distribution chambers, arranged between two existing gas distribution chambers, introduce reactive gases into the process chamber, while inert gases are introduced into the process chamber. It can also be advantageous to use, for example, five vertically stacked gas distribution chambers, alternately introducing a different reactive gas or a mixture of different reactive gases into the process chamber.

[0298] US 2015 / 0232988 Al describes a CVD reactor with a vertically movable process chamber ceiling.

[0299] US 2010 / 0282170 Al describes a CVD reactor with a vertically movable susceptor. 31324R6PCT - 11.09.2025

[0300] US 2012 / 0309175 Al describes a CVD reactor with a vertically movable susceptor that covers a gas inlet opening in an operating position.

[0301] Furthermore, there is a need to be able to vary the height of the process chamber because the process chamber height also influences the flow profile of a process gas flowing through the process chamber.

[0302] The invention is based on the objective of increasing the application range of such a CVD reactor.

[0303] The problem is solved by the invention specified in the claims, and in particular in claims 42 to 44. The dependent claims not only represent advantageous developments of the dependent claims, but also independent solutions to the problem.

[0304] First and essentially, it is proposed that some of the multiple superimposed gas outlet openings be concealed in different operating positions. According to the invention, either the process chamber ceiling or the susceptor assembly is used for this purpose. The process chamber ceiling or the susceptor assembly can assume different operating positions. In these different operating positions, the process chamber ceiling or the susceptor assembly can assume a different vertical orientation. In these operating positions, at least some of the gas outlet openings can be concealed by the process chamber ceiling or the susceptor assembly. In the different operating positions, the number of exposed gas outlet openings, or the number concealed by a narrow side of the process chamber ceiling or the susceptor assembly, varies. 31324R6PCT - 11.09.2025 The process chamber ceiling or the susceptor assembly can assume an initial operating position in which all gas outlet openings to the process chamber ceiling are unobstructed. In this operating position, a deposition process can be carried out in the process chamber to deposit a layer, utilizing all available gas distribution chambers. By changing the vertical position of the process chamber ceiling or susceptor assembly, the process chamber ceiling can be moved in front of the gas outlet openings of the uppermost gas distribution chamber, so that, for example, a narrow surface of the process chamber ceiling, directed towards a gas outlet surface of the gas inlet device, covers the gas outlet openings of the uppermost gas distribution chamber. Similarly, a susceptor forming the bottom of the process chamber can be moved vertically upwards so that it covers the gas outlet openings of the lowest gas distribution chamber.For this purpose, the susceptor or susceptor arrangement can have a narrow surface that is directed towards the gas outlet surface of the gas inlet device.

[0305] The gas outlet surface of the gas inlet device can be a cylindrical surface. The narrow surface of the susceptor or the process chamber ceiling opposite this gas outlet surface can be a hollow cylinder inner surface with a small radial distance to the gas outlet surface. This narrow surface preferably forms a sealing surface with which the gas outlet openings can be covered. It is then possible to block gas flow through the gas outlet openings of one of the gas distribution chambers simply by repositioning either the process chamber ceiling or the susceptor. Crucially, however, the covered gas outlet openings lose their function when the process chamber ceiling or the susceptor is moved vertically into the second operating position. An inert gas can then be fed into the process chamber through the uppermost or lowest gas distribution chamber, with this inert gas coming from the covered gas outlet openings. 31324R6PCT - 11.09.2025 Gas escapes through the gas outlet openings and enters the process chamber through the remaining gap between the narrow surface and the gas outlet surface. According to a preferred embodiment, the gap distance between the narrow surface and the outer surface of the gas inlet element is at least so small that the gas flow through the concealed gas outlet opening is inhibited.

[0306] The process chamber ceiling and / or the susceptor can be moved vertically between several operating positions by means of an actuator, for example a setscrew, or an electric drive, for example a stepper motor. The process chamber ceiling or the susceptor can be a rigid, ring-shaped body. By moving the process chamber ceiling or susceptor, the number of effective vertical levels at which different reactive gases can be introduced into the process chamber can be varied, along with the height of the process chamber.

[0307] An embodiment of the invention is explained below with reference to the accompanying drawings. These show:

[0308] An embodiment of the invention is explained below with reference to the accompanying drawings 62 to 64. These show: Fig. 62 shows an embodiment of the invention in a first operating position in which all gas outlet openings 9 of six vertically arranged gas distribution chambers 8 to the process chamber 12 are free, Fig. 63 shows the embodiment in a second operating position in which the process chamber ceiling 13 has been lowered in such a way, 31324R6PCT - 11.09.2025 that a narrow surface 230 of the process chamber ceiling 13 covers the gas outlet openings 9 of the gas distribution chamber 8 arranged at the top, Fig. 64 shows the embodiment depicted in Figure 62 in an alternative operating position in which the susceptor 14 has been raised in such a way that a narrow side 231 of the susceptor 14 covers the gas outlet openings 9 of the gas distribution chamber 8 arranged at the bottom.

[0309] The embodiment can be a CVD reactor as shown in Figures 1 to 6. Unlike the figures shown there, however, the process chamber ceiling 13 can be moved vertically by means of an actuator 232, so that the process chamber height H can be changed.

[0310] Depending on the type of CVD reactor, the gas inlet element 6 can have a gas outlet surface extending in a vertical plane, in which the gas outlet openings 9 are arranged, through which the gases fed into the various gas distribution chambers 8 can enter the process chamber 12. The process chamber ceiling 13 has a narrow surface 230 facing the gas outlet surface, which is only a short distance from the gas outlet surface.

[0311] Unlike the embodiment shown in Figures 1 to 6, here the susceptor 14 can also be moved vertically by means of an actuator 233, thus changing the process chamber height H. The susceptor 14 has a narrow surface 231 directed towards the gas outlet surface, which is only a small distance from the gas outlet surface. 31324R6PCT - 11.09.2025

[0312] In another type of CVD reactor, the gas outlet surface of the gas inlet element extends onto a cylindrical shell surface. In this type, the gas inlet element 6 has a circular plan. In this embodiment, the narrow surface 230 of the process chamber ceiling 13 or the narrow surface 231 of the susceptor 14 extends onto the inner surface of a hollow cylinder. Here, too, the narrow surface 230 or 231 is only slightly separated from the gas outlet surface of the gas inlet element.

[0313] The distance between the narrow surfaces 230 or 231 and the gas outlet surface can also be chosen such that the narrow surface 230 or 231, in the operating positions shown in Figures 96 and 97, inhibits the escape of a gas through the gas outlet openings 9, which are covered by the narrow surfaces 230 or 231.

[0314] The ability to change the number of effective gas outlet openings 9 allows for the optimization of growth processes with different gases. Furthermore, it may be possible, for example, to change the vertical position of the susceptor 14 or the process chamber ceiling 13 for cleaning the process chamber 12.

[0315] The invention thus also relates to a method for depositing layers in which at least some of the gas outlet openings 9 of one or more gas distribution chambers 8 are shaded by a vertical displacement of the process chamber ceiling and / or the susceptor arrangement. With the invention, it is therefore possible to modify the number of effective gas distribution chambers 8 without replacing a gas inlet element 6. 16. Process chamber of a CVD reactor in which the vertical distance between gas outlet openings of a gas inlet device is variable. 31324R6PCT - 11.09.2025

[0316] The invention relates to a device and a method for depositing layers onto one or more substrates. The device has a gas inlet element comprising several vertically arranged gas distribution chambers. Each gas distribution chamber is connected to a gas mixing system via an associated supply line. The gas mixing system can provide reactive gases and at least one inert gas. Different gases or gas mixtures can be individually fed into a process chamber through individual gas distribution chambers and gas outlet openings associated with each gas distribution chamber.

[0317] Semiconductor layers, particularly III-V semiconductor layers, can be deposited in such a CVD reactor. Different reactive gases are used depending on the material pairing of the semiconductor layer. The process temperatures also vary. One parameter for optimizing the deposition process is the process chamber height. Therefore, there is a need to modify the process chamber height.

[0318] The prior art includes US 4,839,145 A, US 2011 / 0107968 Al, KR 10-0806144 Bl and CN 116988000 A.

[0319] DE 10 2019133 023 Al describes a gas inlet device for a CVD reactor in which the effective vertical height of individual gas distribution chambers can be changed stepwise.

[0320] The invention is based on the objective of providing means by which the vertical height of individual gas distribution chambers can be changed more sensitively. 31324R6PCT - 11.09.2025

[0321] The problem is solved by the invention specified in the claims, in particular claims 45 to 47. The dependent claims not only represent advantageous embodiments of the invention specified in the dependent claims, but also independent solutions to the problem.

[0322] First and foremost, it is proposed that the vertical height of at least some of the gas distribution chambers be continuously variable. For this purpose, the outer wall of the gas inlet element can be provided to be vertically compressible. The outer wall can be made of an elastically deformable, in particular flexurally elastic, material. The vertical distance between gas outlet openings belonging to different gas distribution chambers can preferably be changed by vertically compressing or stretching the gas inlet element. The outer wall of the gas inlet element can consist of several vertically stacked surface elements that run in a zigzag or arc-shaped pattern in the plane of a vertical section. Surface sections of the surface elements can be inclined to a vertical direction. The angle of inclination can change during vertical compression or stretching.In a cross-sectional plane, the outer wall can follow a zigzag or wavy line. The gas inlet element can be bellows-shaped. The gas inlet element can then have surface elements that extend onto truncated conical surfaces. These surface elements can be rounded. The surface elements can connect partition plates. Deformation of the surface elements changes the distance between the partition plates that separate adjacent gas distribution chambers.

[0323] An upper end of the gas inlet device can be connected to a process chamber ceiling, in particular a ceiling panel. A lower end of the 31324R6PCT - 11.09.2025 The gas inlet device can be connected to a susceptor assembly, in particular a susceptor. The ceiling plate or the susceptor assembly can be repositioned by means of an actuator. Such repositioning changes the height of the process chamber. Simultaneously, the gas inlet device is compressed or extended, thus changing the distance between the partition plates.

[0324] With the device according to the invention, it is possible to modify the height of the process chamber, whereby the height of the individual gas distribution chambers changes simultaneously. However, the number of effective gas distribution chambers remains the same.

[0325] Exemplary embodiments of the invention are described below with reference to Figures 65 to 67. These show: Fig. 65 shows a first embodiment of the invention in a first operating position, Fig. 66 shows the first embodiment, wherein the process chamber height H has been reduced by changing the distance from the process chamber ceiling 13 to the susceptor, Fig. 67 shows a second embodiment.

[0326] The embodiments relate to a CVD reactor as shown in Figures 1 to 7. 31324R6PCT - 11.09.2025

[0327] The process chamber height H can be increased or decreased here by a vertical displacement of the process chamber ceiling 13 or the susceptor 14.

[0328] According to the invention, the gas inlet element 6 is designed such that the distance K between the separating plates 245, which separate two vertically arranged gas distribution chambers 8, can be continuously varied. This occurs when the gas inlet element 6 is stretched or compressed in the vertical direction. According to the invention, the outer wall of the gas inlet element 6 is manufactured in the form of a bellows. In the embodiment shown in Figures 65 and 66, the outer wall of the gas inlet element 6 runs along a zigzag line in a cross-sectional plane.

[0329] The gas inlet device 6 can be used on a so-called horizontal reactor, whose susceptor 14 has a rectangular plan.

[0330] In such a gas inlet element 6, whose gas outlet surface lies in a plane, each gas distribution chamber 8 can have two surface elements 241, 242 that are angled relative to each other. The surface elements 241, 242 can be rectangular strips. They are connected to each other at a radially outer edge 244 and at a radially inner edge 243. One of these edges 244, 243 can be connected to the partition plate 245. When the gas inlet element 6 is compressed or stretched, the angle between the surface elements 241, 242 changes. A plurality of gas outlet openings 9 can be arranged in the surface of the surface elements 241, 242. The gas outlet openings 9 can also be arranged in the region of an edge 243, 244. 31324R6PCT - 11.09.2025

[0331] The gas inlet element 6 according to the invention can also be used in a so-called planetary reactor, in which the gas inlet element 6 is arranged in the center of a process chamber 12. In such a gas inlet element 6, whose gas outlet surface extends onto a circular cylinder surface, the surface elements 241, 242 can extend onto conical surfaces. Here too, the angle between the surface elements 241, 242 changes when the gas inlet element 6 is compressed or stretched. The surface elements 241, 242 can also each extend onto a torus surface. When the gas inlet element 6 is compressed or stretched, the radius of curvature of the torus surface 244 changes.

[0332] In order to achieve the operating position shown in Figure 66, the gas inlet device 6 must be compressed, for example by a vertical displacement of the susceptor 14 upwards or a vertical displacement of the process chamber ceiling 13 upwards, so that the height K of each of the gas distribution chambers 8 is reduced.

[0333] The material from which the gas inlet device 6 is made can be a metal, in particular stainless steel.

[0334] The embodiment shown in Figure 67 differs from the embodiment shown in Figures 65 and 66 only in the shape of the gas outlet surface. Here, it has a wave-like shape. 17. CVD reactor with a gas inlet device with gas distribution chamber segments arranged side by side in a horizontal plane, which can be optionally connected to different gas sources. 31324R6PCT - 11.09.2025

[0335] The invention relates to a device and a method for depositing layers onto one or more substrates. A gas inlet element with several vertically arranged gas inlet zones is located in the housing of a CVD reactor. The gas inlet zones have gas distribution chambers into which a process gas is fed via a supply line. The process gas consists of several reactive gases and an inert gas. The various reactive gases can be fed separately into individual gas distribution chambers. However, it is also possible to feed mixtures of reactive gases into a single gas distribution chamber. The gas inlet element has a gas outlet surface that faces a process chamber. Gas outlet openings are located in the gas outlet surface through which the gas fed into the gas distribution chamber can exit into the process chamber.The process chamber contains one or more substrates onto which the layer is to be deposited. The process gas is supplied by a gas mixing system, which has multiple gas sources that can be connected to the supply lines to the gas distribution chambers via valves and mass flow controllers. The valves and mass flow controllers are switched according to a predefined sequence to deposit one or more layers onto the substrates.

[0336] A MOCVD reactor for depositing III-V layers, in which the substrates resting on a susceptor are heated by a heating device, is known from US 8,815,717 B2.

[0337] US patent 2017 / 0314131 Al also discloses a MOCVD reactor for depositing III-V layers. The gas inlet device disclosed here has a gas distribution chamber with several gas distribution segments arranged azimuthally around a center of the gas inlet device. Through the 31324R6PCT - 11.09.2025 Gas distribution segments can feed different reactive gases into the process chamber at a vertical level.

[0338] The invention is based on the objective of improving the device described above for depositing layer structures that have one or more III-V layers, II-VI layers or IV-IV layers.

[0339] The problem is solved by the invention specified in the claims and in particular in claims 48 to 50, wherein the dependent claims are not only advantageous further developments of the invention specified in the subordinate claims, but also represent independent solutions to the problem.

[0340] First and essentially, it is proposed that a supply line to a gas distribution segment includes a valve arrangement with which the gas distribution segment can be selectively connected to one of several gas sources. Preferably, the gas sources that can be selectively connected to the gas distribution segment are a gas source of a first reactive gas and a gas source of a second reactive gas, for example, a metal-organic compound of an element of group III or II or a hydride of an element of group V or VI. The reactive gases can also be different chemical compounds of an element of group IV. The valve arrangement allows this gas distribution segment to be alternately connected to one of several gas sources. 31324R6PCT - 11.09.2025 Ill

[0341] The mixing system may also include a gas source for an inert gas. Additional valves may be provided to allow the inert gas to be fed into one of the gas distribution segments alongside the reactive gases.

[0342] The gas distribution segments extend over a circumferential angle around the center of the gas inlet element. The gas inlet element can be a cylindrical body with several vertically stacked gas distribution chambers. An uppermost and a lowermost gas distribution chamber can be a single unit connected only by a single feed line through which, for example, a hydride of an element from Group III can be fed into the process chamber. A gas distribution chamber comprising a group of gas distribution segments can be arranged between these two gas distribution chambers. Several groups can be arranged one behind the other circumferentially around the center of the gas inlet element. For example, each group can extend over a circumferential angle of 90°, resulting in a total of four groups of gas distribution segments arranged around the center.Each group can also extend over a circumferential angle of 60°, resulting in a total of six groups of gas distribution segments arranged around the center. Each group of gas distribution segments can contain at least three gas distribution segments. The gas distribution segments can be arranged circumferentially in the same sequence. The gas distribution segments can extend over the same circumferential angle, for example, 30°. However, it is also possible for the different gas distribution segments to extend over different circumferential angles around the center, for example, 25°, 30°, and 35°. In addition to a four-part symmetry, the groups can also be arranged in a three-part, five-part, or six-part symmetry. In the latter case, each gas distribution segment can extend over 20°. 31324R6PCT - 11.09.2025

[0343] The gas inlet element has a gas outlet surface extending over a cylindrical surface, which features a plurality of gas outlet openings. Each gas distribution segment has at least one gas outlet opening. Preferably, however, each gas distribution segment has a plurality of gas outlet openings. At least one supply line can open into each gas distribution segment.

[0344] The device according to the invention enables switching during a deposition process, particularly after the deposition of a first layer on a substrate and before the deposition of a second layer on the substrate. During a first process step, a first gas distribution segment can be connected to a metal-organic source. A second gas distribution segment can be connected to a hydride source. The third gas distribution segment can be connected to either the metal-organic source or the hydride source. Additionally, the three gas distribution segments can be connected to an inert gas source with which the reactive gas can be diluted.

[0345] During a second process step, the first gas distribution segment can remain connected to the metal-organic source. The second gas distribution segment can remain connected to the hydride source. The third gas distribution segment can now be connected to the hydride source by switching. The process according to the invention allows deposition processes to be carried out more efficiently and leads to greater uniformity of the layers deposited on the substrates.

[0346] The first and second gas distribution segments can each be connected to a different metal-organic source. The third gas distribution segment can then be optionally connected to either of the two metal-organic sources. 31324R6PCT - 11.09.2025

[0347] The process chamber may have a ceiling. The floor of the process chamber is formed by a susceptor or susceptor assembly on which the substrates are arranged. During the deposition process, the susceptor or susceptor assembly can be rotated around the gas inlet. The substrates are arranged in a circular configuration around the gas inlet. They may be mounted on substrate holders that can be driven to rotate around a rotary axis.

[0348] An embodiment of the invention is explained below with reference to the accompanying Figures 68 to 71. These show: Fig. 68 shows a cross-section through a gas inlet device 6 along the line LXVIII-LXVIII in Figure 70, Fig. 69 schematically shows a gas mixing system 10, Fig. 70 shows a gas inlet device 6 with three gas distribution levels arranged one above the other according to arrow LXX in Figure 68, Fig. 71 shows a representation according to Figure 69 of a second embodiment.

[0349] A gas inlet element, such as that shown in Figure 1, is further developed according to the invention by further subdividing at least one of the vertically arranged gas distribution chambers 8. In the gas distribution chamber 8, several radially extending partitions extend between an upper partition 263 and a lower partition 263. 31324R6PCT - 11.09.2025 Partition walls 262, which divide a gas distribution chamber 8 into several gas distribution segments 250, 251 and 252.

[0350] The three gas distribution segments 250, 251, 252 form a group of gas distribution segments, the gas distribution segments being arranged in groups. In the exemplary embodiment, six groups of three gas distribution segments 250, 251, 252 each are arranged circumferentially around the center of the gas inlet element 6.

[0351] A common supply line 257 may be provided, with which each group's first gas distribution segment 250 is connected to a first gas source. 254 is connected. A further common supply line 258 allows a second gas distribution segment 251 of each group to be connected to a second gas source. 255. With a further common supply line 259, a third gas distribution segment 252 of each group can be optionally connected to either the first gas source 254 or the second gas source 255 by means of a valve arrangement 261', 261".

[0352] The gas mixing system 10, which has valves 261, 261', 261", 265, 265' and 264, 264' that can be controlled by a control unit 110, also has mass flow controllers 260 with which a mass flow of the reactive gases, but also of an inert gas that is provided by a third gas source 256, can be set.

[0353] Gas outlet openings 9 are located in the gas outlet surface of an outer wall 240 of the gas inlet element 6, which extends over a cylindrical surface, with each gas distribution segment 250, 251, 252 having a plurality of gas outlet openings 9. The gas outlet openings 9 are arranged uniformly across the gas outlet surface. 31324R6PCT - 11.09.2025

[0354] The following procedure can be carried out with the device:

[0355] In a first process step, a hydride, for example AsHβ or NH3, is fed into a gas distribution chamber 8 located at the top and another located at the bottom, each together with an inert gas, for example hydrogen. The gas distribution chamber 8 located in the vertical center feeds both the hydride and a metal-organic compound, for example TMGa, into the process chamber. For this purpose, the metal-organic compound is fed into the first gas distribution segment 250, the hydride into the second gas distribution segment 251, and the metal-organic compound also into the third gas distribution segment 252. For this, valve 261" is open and valve 261' is closed.

[0356] During the first process step, the susceptor is rotated around a susceptor rotation axis and brought to a first process temperature by means of a heating device 17.

[0357] The first process step can be followed by a second process step in which hydrogen and a hydride are fed into both the uppermost and the lowermost gas distribution chambers. Hydrides and a metal-organic compound are again fed into the gas distribution chamber 8 located in the vertical center. For this purpose, the first gas distribution segment 250 is connected to the first gas source 254, and the second gas distribution segment 251 is connected to the second gas source 255. The third gas distribution chamber 252 can be connected to the second gas source 255, which contains the hydride, during this process step. For this, valve 261" is closed and valve 261' is open. 31324R6PCT - 11.09.2025

[0358] Figure 71 shows a further embodiment of a gas mixing system 10, which has a fourth gas source 255', with which a further reactive gas is provided. This reactive gas can be, for example, a hydride of group V or a metal-organic compound of an element of group III.

[0359] With an additional valve 261"', the third gas distribution segment 252 can optionally also be flow-connected to this further reactive gas, so that in one process step for depositing a layer, either several reactive gases containing an element of the III main group together with a gas containing an element of the V main group or several reactive gases containing an element of the V main group together with a gas containing an element of the III main group can be fed separately into the process chamber through the gas distribution chamber having the gas distribution segments arranged in groups. 18. CVD reactor with a gas inlet device having several vertically arranged gas distribution chambers, wherein a cleaning gas can be fed into a process chamber through a central gas distribution chamber.

[0360] The invention relates to a device and a method for depositing layers onto one or more substrates. A gas inlet element is located in the housing of a CVD reactor. The gas inlet element can be located in the center of a circular process chamber. Alternatively, the gas inlet element can be located at the edge of a process chamber with a rectangular plan view. The gas inlet element has several vertically arranged gas inlet zones, each gas inlet zone containing a gas distribution chamber. 31324R6PCT - 11.09.2025 The gas distribution chambers have gas outlet openings through which the gas fed into them can exit into the process chamber, optionally together with an inert gas. The gas inlet element has a gas outlet surface on which the gas outlet openings are arranged in a substantially uniform manner. Substrates are placed on a susceptor assembly, which is heated by a heating device, and are coated by feeding reactive gases through the gas inlet element. Different reactive gases can be fed into the process chamber through separate gas distribution chambers.

[0361] US patents 11,551,950 B2 and 2006 / 0060143 Al describe a CVD reactor for depositing layers onto substrates.

[0362] German patent DE 10 2015 101 462 A1 describes a MOCVD reactor with a gas mixing system comprising multiple gas sources that can be selectively connected, via valves and mass flow controllers, to vertically stacked gas distribution chambers of a gas inlet device. A cleaning gas distribution chamber, connected to a cleaning supply line, is located in an area of ​​the process chamber ceiling adjacent to the gas inlet device. The cleaning gas distribution chamber has gas outlet openings through which the cleaning gas can exit into the process chamber for cleaning purposes.

[0363] The additional cleaning gas distribution chamber requires, on the one hand, increased design effort and, on the other hand, is spatially separated from the floor of the process chamber, so that the cleaning gas can only have an insufficient effect there. 31324R6PCT - 11.09.2025

[0364] The invention is based on the objective of increasing performance in a cleaning step with less design effort.

[0365] The problem is solved by the invention specified in the claims, in particular in claims 51 to 54. The dependent claims are not only advantageous further developments of the invention specified in the dependent claims, but also represent independent solutions to the problem.

[0366] In the process according to the invention, a layer, for example a III-V layer, is deposited on one or more substrates in a process chamber in a single process step. For this purpose, reactive gases are fed into the process chamber through the gas inlet device, which is heated to a process temperature by means of a heating device. At the process temperature, the reactive gases decompose and deposit a layer on the substrate. Decomposition products of the reactive gases also deposit at other locations within the process chamber. These parasitic coatings are removed in a subsequent cleaning step by introducing a cleaning gas, for example chlorine. To avoid cross-reactions, it is advantageous not to introduce the cleaning gas into the process chamber through a gas distribution chamber through which a reactive gas, for example a hydride of an element of class V, has flowed in the previous process step.Main group or a metal-organic compound of an element of the III main group.

[0367] According to the invention, the cleaning gas is fed in through a cleaning gas distribution chamber formed by the gas inlet element. For this purpose, the invention proposes that a cleaning gas supply line, connected to a cleaning gas source and through which the gas is distributed, is provided. 31324R6PCT - 11.09.2025 A cleaning gas can flow through one or more valves controlled by the control unit and a mass flow controller, and is connected to one of the vertically stacked gas distribution chambers of the gas inlet device. As in the prior art, the control unit can control a switching device that allows either the cleaning gas or an inert gas to flow through the cleaning gas supply line, so that during a process step an inert gas can flow into the process chamber through the gas outlet openings of the cleaning gas distribution chamber. However, during the cleaning step, the cleaning gas, for example chlorine or HCl, can flow into the process chamber.

[0368] The cleaning gas distribution chamber can be the uppermost gas distribution chamber. It can also be the lowermost gas distribution chamber. Alternatively, the cleaning gas distribution chamber can be a middle gas distribution chamber. A gas distribution chamber can be arranged directly above or directly below the cleaning gas distribution chamber, through which a reactive gas, for example, a hydride from group V or a metal-organic compound of an element from group III, can be introduced into the process chamber during the process step. During the cleaning step, an inert gas can flow into the process chamber through these gas distribution chambers instead of the reactive gas.

[0369] Exemplary embodiments of the invention are explained below with reference to the accompanying Figures 72 to 74. These show: Fig. 72 schematically shows a part of a gas mixing system and a CVD reactor of a first embodiment of the invention, Fig. 73 shows a second embodiment of the invention, 31324R6PCT - 11.09.2025 Fig. 74 shows a third embodiment of the invention.

[0370] The figures show part of a gas mixing system comprising a first gas source 274, which provides a metal-organic gas, for example TMGa or TMA1. The gas mixing system has a second gas source 275, which can provide a hydride, for example AsH₂ or NH₃. A third gas source, designated by reference numeral 276, can provide an inert gas, for example hydrogen, for a process step in which a layer is deposited, or nitrogen for a purification step in which chlorine is introduced into the process chamber. The gas mixing system has a fourth gas source 277, which is a purification gas source, providing a purification gas, for example chlorine or HCl.

[0371] The CVD reactor has a process chamber assembly with a susceptor 14 and cover plates 15, 16 resting on the susceptor 14. As described above, a substrate holder 20 is rotatably mounted in a pocket 34 of the susceptor 14. A process chamber 12 extends between the susceptor assembly and a process chamber ceiling 13, into which the process gas can be fed by means of a gas inlet device 6.

[0372] The gas inlet device 6 has several vertically arranged gas distribution chambers. The hydride can be fed into the process chamber 12 through a gas distribution chamber 271. The metal-organic compound can be fed into the process chamber 12 through a gas distribution chamber 172. This is done in each case together with an inert gas. For this purpose, a supply line 278 is connected to the gas via a mass flow controller 281 and valves 282. 31324R6PCT - 11.09.2025 Source 274 is connected. Another supply line 280 also connects the gas distribution chamber 271 to the gas source 275 via mass flow controllers 281 and valves 282.

[0373] A cleaning gas distribution chamber 270 is connected to the cleaning gas source 277 via a cleaning gas supply line 279 and valves 282 and a mass flow controller 281.

[0374] In the embodiment shown in Figure 72, the cleaning gas distribution chamber 270 is arranged in the vertical center between the gas distribution chamber 271 and the gas distribution chamber 272.

[0375] In the embodiment shown in Figure 73, the cleaning gas distribution chamber 270 is arranged at the top.

[0376] In the embodiment shown in Figure 74, the cleaning gas distribution chamber 270 is arranged at the bottom.

[0377] With the devices described above, a layer can be deposited on the substrate 21 in a single process step. For this purpose, the cleaning gas supply line 279 is connected to the inert gas source 276 by appropriately positioning the valves 282. The supply line 278 is connected to the gas source 274, which provides the metal-organic compound. The supply line 279 is connected to the gas source 275, which provides the hydride.

[0378] After the process step, the supply lines 278 and 279 are each connected to an inert gas source 276. This inert gas source 276 can be a nitrogen source or a hydrogen source. 31324R6PCT - 11.09.2025 The process depends on which cleaning gas is used. The supply line 280 is connected to the cleaning gas source 277, so that a cleaning gas is fed into the process chamber 12, which is heated to a cleaning temperature, via the cleaning gas distribution chamber 270.

[0379] All disclosed features are essential to the invention (individually, but also in combination with one another). The disclosure of this application hereby incorporates in full the disclosure content of the associated / attached priority documents (copy of the earlier application), also for the purpose of including features of these documents in the claims of the present application. The dependent claims, even without the features of a referenced claim, characterize independent inventive developments of the prior art, in particular for the purpose of filing divisional applications based on these claims. The invention specified in each claim may additionally include one or more of the features described above, in particular those identified by reference numerals and / or listed in the reference numeral list.The invention also relates to design forms in which individual features mentioned in the preceding description are not realized, in particular insofar as they are recognizably unnecessary for the respective purpose or can be replaced by other technically equivalent means. 31324R6PCT - 11.09.2025 List of reference symbols 1 CVD reactor 24 transparent closure elements 2 housing elements, windows 3 upper case wall 24' surface 4 side housing wall 25 optical path 5 lower housing wall 26 opening 6 Gas inlet device 27 Side wall 7 Lead wire 28 Shaft 8 Gas distribution chamber 29 Cooling element 9 Gas outlet opening 30 Heating device 10 Gas mixing system 31 Plate 11 Control unit, control unit 32 Supply line towards 33 Outlet 12 Process Chamber 34 Bag 13 Process chamber ceiling 34 ' floor 14 Susceptor 35 Gas cushion 15 Cover plate 36 Measuring device, pyrometer 16 Cover plate 37 Bracket 17 Heating device 38 Seal 18 Gas outlet 39 Seal 19 Opening 40 Purge gas supply line 20 substrate holders, 41 gas outlet area 20 ' Underside 42 Separation plane 20" top 43 cooling chamber 21 Substrate 44 Loading / unloading opening 21' Underside 45 Transfer module 21" top side 46 transfer chamber 22 optical devices, sensor 47 robots 23 Opening 48 Arm 31324R6PCT - 11.09.2025 Gripper 142 mounting surface Gripper arm 143 radial inner section ' Gripper arm 144 middle section 1 flexible light guide, fiber optic 145 edge section 2 optical module 146 bore 3 optical element, light source, 147 actuator laser, sensor, pyrometer 148 annular groove, thermal insulation 4 multiplexer zone 1 opening 149 direction of movement 2 opening 150 axis of rotation 3 opening 160 cover, cover plate 4 optical path 160' surface 5 optical path 161 transparent area, first 6 optical path zone 7, 118, 119 optical element, 162 transparent area, second light source, laser, sensor, pyrometer 163 transparent area,third opening Zone 5 Sensor 164 Passage area 6 Light source 165 Intermediate zone 7 Optical path 166 End zone 8 Optical path 167 Actuator 9 Measuring point 170 Material thickness 0 Optical element 171 Material thickness 1 Optical element 172 Material thickness 5 Measuring distance 173 Foot 6 Control distance 180 Actuator 7 Signal evaluation device 181 Process chamber ceiling element 0 Surface 182 Actuator 1 Surface 183 Process chamber ceiling element, 31324R6PCT - 11.09.2025 Actuator 231 Narrow surface process chamber ceiling element 232 Actuator concentration profile 233 Actuator susceptor element 234 Horizontal plane process chamber ceiling element 240 Outer wall connecting element 241 Surface element connecting element 242 Surface element gas outlet element 243 Radial inner edge gas outlet organ 244 Radial outer edge gas collection channel 245 Separating plate gas outlet opening 250 First gas distribution segment discharge 251 Second gas distribution segment discharge 252 Third gas distribution segment throttle valve 254 First gas source, metal-organic throttle valve gas source pump 255 Second gas source, hydride gas pump source actuator 255 Third gas source, reactive gas pressure sensor 256 Fourth gas source, intergas heating element source coil 257 Supply line opening 258 Supply line gear 259 Supply line gear 260 Mass flow controller Rotary axis 261 Valve -224 Flexible element 26 F Valve Rigid ceiling panel 261" Valve Actuator 26 F" Valve Rigid element 262 Partition wall Narrow surface 264 Valve 31324R6PCT - 11.09.2025 64' Valve 65 Valve 65' Valve 70 Cleaning gas distribution chamber 71 Gas distribution chamber 72 Gas distribution chamber 274 first gas source, with organic gas source 275 second gas source, hydride gas source 276 third gas source, Intergas source 277 fourth gas source, purification gas source 278 Supply line 279 Cleaning gas supply line 280 supply line 281 Mass Flow Controller 282 Valve H Height (Process Chamber) K vertical height a angle 31324R6PCT - 11.09.2025

Claims

Claims 1. Device for depositing layers onto one or more substrates (21), wherein a process chamber (12) is arranged in a housing (2) with housing walls (3, 4, 5), the process chamber being bounded at the top by a process chamber ceiling (13) and at the bottom by a susceptor arrangement (14, 15, 16) for receiving the one or more substrates (21), into which a process gas supplied by a gas mixing system (10) can be fed via a gas inlet device (6), wherein the susceptor arrangement (14, 15, 16) can be heated by a heating device (17) to a process temperature of >800°C, wherein the process chamber ceiling (13) has such a small vertical distance from the susceptor arrangement (14, 15, 16) that the process chamber ceiling (13) reaches a temperature of at least 500°C, and with an optical device (22) which has an optical path (25) through an opening (23) in the housing wall (3) with the surface of the substrate (21) or the susceptor arrangement (14, 15,16) interacts, characterized in that the optical device (22) has a light guide (101, 101').

2. Device according to claim 1, characterized in that the light guide (101, 101') is a flexible light guide and in particular is an optical fiber, and / or that the light guide (101, 101') connects the opening (23) to an optical element (103) which is arranged remotely from the opening (23) in an optical module (102), wherein it is particularly provided that the optical element (103) is a sensor, for example a pyrometer, or a light source, for example a laser, 31324R6PCT - 11.09.2025 and / or that an optical module (102) is connected via several light guides (101, 101') to an opening (23), and / or that an optical module (102) is connected via several light guides (101, 101') to openings (23) of different housings (2), each having a process chamber (12), and / or that several light guides (101, 101') are connected via a multiplexer (104) to a common optical element (103), and / or that the light guide is made of a material that is light-conducting at least 600°C, and / or that the light guide (101) opens into an opening (26) of a side wall (27), a process chamber ceiling (13) or a susceptor (14).

3. Device for depositing layers on one or more substrates (21), wherein a process chamber (12) is arranged in a housing (2) with housing walls (3, 4, 5), which is bounded upwards by a process chamber ceiling (13) and downwards by a susceptor arrangement (14, 15, 16) for receiving the one or more substrates (21), into which a process gas supplied by a gas mixing system can be fed via a gas inlet device (6), with an optical device (22) which interacts with the surface of the substrate (21) or the susceptor arrangement (14, 15, 16) via an optical path (25) through an opening (105), characterized in that the opening (111, 112, 113) is located in the susceptor arrangement (14, 15, 16).

4. Device according to one of the preceding claims, characterized in that the optical device is a pyrometer. 31324R6PCT - 11.09.2025 and / or that the opening (111, 112, 113) is arranged in a susceptor (14) of the susceptor assembly, and / or that the susceptor assembly (14, 15, 16) has one or more pockets (34) in each of which a substrate holder (20) for receiving the substrate (21) is located, and the opening (111, 112, 113) is arranged in a base (34') of the pocket, and / or that a further opening (120) is arranged in the substrate holder (20), wherein the two openings (111, 113; 105, 120) are equidistant from a center of the substrate holder (20) or the pocket (34), and / or that the two openings (111, 112, 113; 105, 120) are located at the center of the substrate holder (20) or the pocket (34) lie, and / or that the opening (105) is the outlet opening (33) of a gas supply line (32).

5. A method for depositing layers onto one or more substrates (21), wherein a bottom surface (21') of the one or more substrates (21) faces a susceptor arrangement (14, 15, 16) and a top surface (21") faces a process chamber (12), wherein during deposition an optical device (22) is operated which interacts with the surface of the substrate (21) or the susceptor arrangement (14, 15, 16) via an optical path (25) through an opening (111, 112, 113), characterized in that the opening (111, 112, 113) is located in the susceptor arrangement (14, 15, 16) and the optical device (22) interacts with the bottom surface (21') of the substrate (21) or a bottom surface (20') of a substrate located in a pocket (34) of a susceptor (14) of the Susceptor arrangement of lying substrate holder (20) interacts. 31324R6PCT - 11.09.2025 6. Device for depositing layers onto one or more substrates (21), comprising a CVD reactor (1) having a process chamber (13) in which the substrates (21) are coated, with a transfer chamber (46) of a transfer module (45) adjoining a housing (2) of the CVD reactor (1), in which a robot (47) is arranged having a gripper (49) which can reach through a loading / unloading opening (44) of the housing (2) to load the process chamber (13) with substrates (21) or to unload the process chamber (21), characterized in that the robot (47) has an optical element (130, 131).

7. Device according to claim 6, characterized in that the optical element (130, 131) interacts with an optical sensor (125) or is an optical sensor, and / or that the optical sensor (125) is a pyrometer or an imaging sensor, and / or that the optical element is an end (130, 131) of a particularly flexible light guide (101, 100') the other end of which is connected to a sensor (125, 126), and / or that the optical element (130, 131) is arranged on a gripping arm (50, 50') of the gripper (49), and / or that the optical element (130, 131) is part of a particle sensor, and / or that the optical element (130, 131) has a light source (126) that emits light which is received by the sensor (125), and / or that the optical element (130) of a first The gripper arm (50) of the gripper (49) emits light and the optical element (131) of a second gripper arm (50') of the gripper (49) receives light, 31324R6PCT - 11.09.2025 131 and / or that two gripper arms of the gripper form a light barrier.

8. Method for treating a substrate (21) in a process chamber (13) of a CVD reactor (1), wherein a gripper (49) of a robot (47) is brought into the process chamber (13) through a loading / unloading opening (44), characterized in that the gripper has an optical element (130, 131) with which optically detectable states or properties within the process chamber (12) are determined.

9. Method according to claim 8, characterized in that the properties are optical properties of a surface, in particular a substrate surface or a surface of a susceptor arrangement, and / or that light is emitted from a light source (126) which is reflected at a surface and the reflected light is received by a sensor (125), and / or that a deflection of the substrate or its temperature is measured with the optical element (130, 131).

10. Device for depositing layers onto one or more substrates (21), wherein a process chamber (12) is arranged in a housing (2) with housing walls (3, 4, 5), the process chamber being bounded at the top by a process chamber ceiling (13) and at the bottom by a susceptor arrangement (14, 15, 16) for receiving the one or more substrates (21), into which a process gas supplied by a gas mixing system (10) can be fed via a gas inlet device (6), with a heating device (17) for heating the susceptor arrangement (14, 15, 16) and 31324R6PCT - 11.09.2025 132 with an optical device (22) which interacts with the surface of the substrate (21) or the susceptor arrangement (14, 15, 16) via an optical path (25) through an opening (23) in the housing wall (3), characterized in that the optical device is a sensor (22) for optically determining the electrical band gap of at least one of the deposited layers.

11. Device according to claim 10, characterized in that the sensor (22) interacts with a signal evaluation device (137) which determines the band gap of the layer from the sensor data supplied by the optical sensor (22), and / or that the sensor (22) interacts with a control device (11) which controls the heating device (17) in such a way that an actual value of a band gap of the layer measured by the optical sensor (22) is regulated against a setpoint by changing the heating power of the heating device (17).

12. Method for depositing layers on one or more substrates (21), wherein the substrates are heated to a process temperature by means of a heating device (17), wherein the heating device (17) is controlled by a control device (11), wherein a process gas consisting of one or more reactive gases is fed into a process chamber (12) through a gas inlet device (6), wherein components of the process gases are deposited as a layer on surfaces (21") of the substrates (21), 31324R6PCT - 11.09.2025 133 wherein the layer is a semiconductor layer with an electrical band gap, characterized in that by varying the heating power of the heating device (17) a setpoint of an actual value of the band gap determined by means of an optical sensor (22) is controlled against a setpoint.

13. Device for treating one or more substrates (21), wherein a process chamber (12) for receiving the one or more substrates (21) is arranged in a housing (2) with housing walls (3, 4, 5), the process chamber being bounded at the top by a process chamber ceiling (13) and at the bottom by a susceptor arrangement (14, 15, 16), with an optical device (22) which interacts with the surface of the substrate (21) or the susceptor arrangement (14, 15, 16) via an optical path (25) through an opening (23) in the housing wall (3), wherein a transparent element (24) is provided through which the optical path (25) passes, characterized in that the transparent element (24) is designed such that it focuses, widens, deflects or otherwise influences the path of a light beam, and / or that the window (24) is positioned relative to the housing (2) It is relocatable.

14. Device according to claim 13, characterized in that the transparent element (24) is a window (24) closing the opening (23), and / or that the window (24) is a convex or concave lens or a prism, and / or that actuators are provided with which the window (24) can be linearly displaced in a plane of extension of the housing wall (3) and / or perpendicular to the plane of extension of the housing wall (3), 31324R6PCT - 11.09.2025 134 and / or that actuators are provided with which the window (24) can be rotated about a rotational axis or pivoted about a horizontal axis.

15. Method for treating one or more substrates (21), wherein a bottom side (21') of the one or more substrates (21) faces a susceptor arrangement (14, 15, 16) and a top side (21") faces a process chamber (12), wherein during deposition an optical device (22) is operated which interacts with the surface of the substrate (21) or the susceptor arrangement (14, 15, 16) via an optical path (25) through an opening (23) of a housing (2) and a transparent element (24), characterized in that the transparent element (24) is configured to focus, widen, deflect, or otherwise influence the path of a light beam, and the transparent element (24) is displaced relative to the housing (2) during the treatment of the layers, wherein it is particularly provided that the transparent element forms a window closing the opening (23). (24) is.

16. Device for treating one or more substrates (21), wherein a susceptor arrangement (14, 15, 16) for receiving the one or more substrates (21) is arranged in a housing (2) and at least one housing wall (3) of the housing (2) has an opening (23) closed by a transparent window (24), wherein the window (24) has a passage area (46) through which an optical path (25) runs between an optical device (22) and a storage place for a substrate (21), 31324R6PCT - 11.09.2025 135 wherein the window (24) is attached to the housing wall (3) by a bracket (37), and wherein a heating device (14) is arranged in the housing (2), characterized by a thermal insulation zone (148) between the passage area (164) and the bracket (37).

17. Device according to claim 16, characterized in that the holder (37) is made of metal and a transparent body of the window (24) made of glass or quartz is attached to the housing (2), and / or that the insulation zone (148) is a zone surrounding the passage area (164) in which the material thickness of the window (24) measured in the direction of the optical path (25) is reduced compared to the passage area (164), and / or that the insulation zone (148) is a zone of the holder (37) surrounding the passage area (164) in which the material thickness of the holder (37) measured in the direction of the optical path (25) is reduced compared to a radially outer area with which the holder (37) is attached to the housing wall (3), and / or that the passage area (164) is surrounded by an annular groove (148), and / or that an edge (108) of the window (24) is bonded or is positively connected to the holder (37),and / or that a thickness (d2) of the window (24) measured in the direction of the optical path (25) is less than a thickness (dl) of the support (37) measured in the direction of the optical path (25), and / or that at least in a contact area (142) where the window (24) abuts the support (37), the thickness (d3) of the window (24) is less than the thickness (d2) of the window (24) in the passage area. 31324R6PCT - 11.09.2025 136 18. Method for treating one or more substrates (21) with a device according to one of claims 16 or 17, characterized in that a process gas containing one or more reactive gases is fed into the housing (2) by means of a gas inlet device (6), so that decomposition products of the reactive gases are deposited as a layer on the substrate and are also transported to the window (24), characterized in that the surface of the window (24) facing the susceptor arrangement (14, 15, 16) is heated to a higher temperature at least in the passage area (164) than in a section (144) surrounding the passage area (64).

19. Device for depositing layers onto one or more substrates (21), wherein an opening (23) of a housing wall (3) of a housing (2) is closed by a transparent window (24) and an optical path (25) runs through the window (24) between an optical device (22) and a storage location for a substrate (21) on a susceptor arrangement (14, 15, 16), wherein the window (24) is displaceable relative to the opening (23) such that in a first operating position a first zone (161) of the window (24) lies in the passage area (164) of the optical path (25) and in a second operating position a second zone (162) of the window (24), spatially separated from the first zone, lies in the passage area (164) of the optical path (25), wherein the second zone in the first operating position is covered by a cover (160) in the direction of the process chamber (12), thereby characterizedthat an intermediate zone (165) is arranged between the first zone and the second boundary zone. 31324R6PCT - 11.09.2025 137 20. Device according to claim 19, characterized in that the intermediate zone (165) is an active condensation zone on which decomposition products of the process gas are deposited, and / or that the intermediate zone (165) forms a diffusion barrier, and / or that an actuator (167) is provided with which the window (24) can be moved during a deposition process in which several layers are deposited on the substrate, or during a process step in which a layer is deposited on the substrate, and / or that the intermediate zone (165) forms a frame made of an opaque material and has openings in which a transparent body is arranged, which in particular has a lesser material thickness than the substantially flat frame.

21. Method for depositing layers on one or more substrates (21), wherein a bottom side (21') of the one or more substrates (21) faces a susceptor arrangement (14, 15, 16) and a top side (21") faces a process chamber (12), wherein a process gas containing one or more reactive gases is fed into the process chamber (12), the reactive gases forming a layer on the substrate (21) and, in a first operating position, a parasitic coating is deposited on a first zone (161) of a window (24) that closes an opening (23) of a housing wall (3) and through which an optical path (25) passes, wherein, after reaching a limit value of turbidity of the surface (24') of the window (24), the window (24) is moved to a second operating position in which the optical path (25) passes through a second zone (162) of the window (24). 31324R6PCT - 11.09.2025 138 characterized in that an intermediate zone (165) is arranged between the first zone (161) and the second zone (162), which forms the function of a condensation zone, where decomposition products are selectively deposited, or of a diffusion barrier, which, in conjunction with a cover (160) covering the second zone in the first operating position, inhibits the diffusion of decomposition products into a gap between window (24) and cover (160).

22. Device for depositing layers onto one or more substrates (21), wherein a transparent window (24) is arranged in a housing wall (3) of a housing (2), through which an optical path (25) runs, connecting an optical device (22) with a storage location of a substrate on a susceptor arrangement (14, 15, 16), wherein a cleaning gas can be supplied through an opening of a gas supply line (40) in the area of ​​a surface of the window (24) facing into the interior of the housing (2), which is provided by a gas mixing system (10), characterized in that the gas mixing system (10) has a source of a halogen, in particular chlorine or HCl, and this source can be connected to the gas supply line (40) by means of a valve and a mass flow controller.

23. Method for cleaning the inside of a transparent window (24) arranged in a housing wall (3) of a housing (2) of a CVD reactor with a cleaning gas supplied to the area of ​​the inside of the window (24) via a gas supply line (40), characterized in that the cleaning gas is a halogen, in particular chlorine or HCl. 31324R6PCT - 11.09.2025 24. Device for depositing layers onto one or more substrates (21), wherein a process chamber (12) is arranged in a housing (2), the process chamber being bounded upwards by a process chamber ceiling (13) and downwards by a susceptor arrangement (14, 15, 16) supporting the one or more substrates (21), the susceptor arrangement (14, 15, 16) comprising a susceptor (14) forming a support surface on which cover plates (15, 16) each have a support area, comprising a gas inlet element (6) having gas outlet openings (9) directed towards the process chamber (12), through which a process gas consisting of one or more reactive gases supplied by a gas mixing system (10) flows into the process chamber (12), and comprising a gas outlet element (18) with which decomposition products of the process gas and an inert gas fed into the process chamber (12) together with the process gas are removed from the process chamber (12),wherein a height of the process chamber (12) defined by a distance of a free surface of cover plates (15, 16) of the process chamber arrangement (14, 15, 16) facing the process chamber (12) to a free surface of the process chamber ceiling (13) facing the process chamber (12) has locally different values, characterized in that the free surface of the cover plates (15, 16) have different distances to the support area.

25. Device according to claim 24, characterized in that a cover plate (15) adjacent to the gas inlet element (6) has a different material thickness (170, 171) than a cover plate (16) adjacent to the gas outlet element (18), 31324R6PCT - 11.09.2025 and / or that the gas inlet element (6) is arranged in the center of a process chamber (12) and several cover plates (15, 16) are arranged one behind the other in the radial direction, which have at least partially different material thicknesses (170, 171), and / or that the gas inlet element (6) is arranged in the center of a process chamber (12) and several cover plates (15, 16) are arranged next to each other in the azimuthal direction, which have at least partially different material thicknesses (170, 171), and / or that the cover plates (15, 16) have a locally varying material thickness (170, 171, 172), wherein it is particularly provided that a lower surface of the cover plates (15, 16) facing a susceptor (14) is flat and the upper surface of the cover plates (15, 16) facing the process chamber (12) has a height structure, and / or that a height structure of the top of the cover plates (15,16) with respect to a line connecting the center of the gas inlet organ (6) with the center of a substrate (21), is symmetrical and, for example, has a curve.

26. Device for depositing layers onto one or more substrates (21), wherein a process chamber (12) is arranged in a housing (2), the process chamber being bounded upwards by a process chamber ceiling (13) and downwards by a susceptor arrangement (14, 15, 16) supporting the one or more substrates (21), with a gas inlet element (6) having gas outlet openings (9) directed towards the process chamber (12), through which a process gas consisting of one or more reactive gases provided by a gas mixing system (10) flows into the process chamber (12), and 31324R6PCT - 11.09.2025 with a gas outlet device (18) with which decomposition products of the process gas and an inert gas fed into the process chamber (12) together with the process gas are removed from the process chamber (12), wherein a height (H1, H2, H3) of the process chamber (12) defined by a distance of a free surface of the process chamber arrangement (14, 15, 16) facing the process chamber (12) to a free surface of the process chamber ceiling (13) facing the process chamber (12) has locally different values, characterized in that the process chamber ceiling (12) has process chamber ceiling elements (181, 183, 185) which are displaceable at least in the vertical direction.

27. Device according to claim 26, characterized in that several vertically displaceable process chamber ceiling elements (181, 183, 185) are arranged in a ring around the gas inlet element (6) located in the center of the process chamber (12), and / or that several vertically displaceable process chamber ceiling elements (181, 183, 185) are arranged next to each other in a circumferential direction around a center of the process chamber (12), and / or that at least some of the process chamber ceiling elements are assigned actuators (180, 182, 184) with which the respective process chamber ceiling element (181, 183, 185) can be displaced vertically.

28. Method for depositing layers on one or more substrates (21) in a device according to one of claims 26 or 27, characterized in that during the deposition of a layer, cider is deposited in an intermediate time between the deposition of two layers. 31324R6PCT - 11.09.2025 142 or more process chamber ceiling elements (181, 183, 185) are moved vertically.

29. Device for depositing layers onto one or more substrates (21), wherein a process chamber (12) is arranged in a housing (2), which is bounded upwards by a process chamber ceiling (13) having several process chamber ceiling elements (191), and which is bounded downwards by a susceptor arrangement (14, 15, 16) supporting the one or more substrates (21) and having several susceptor elements (190), characterized in that each susceptor element (190) is mechanically connected to a process chamber ceiling element (191) and can be removed from the housing (2) and reinserted into the housing (2) as a unit.

30. Device according to claim 29, characterized in that the susceptor element (190) and the associated process chamber ceiling element (191) are parts of a process chamber outer wall (27) and a gas outlet device (18), and / or that the susceptor element (90) and the process chamber ceiling element (191) associated with it extend over an identical azimuthal angle and are arranged vertically one above the other.

31. Method for loading and unloading a device according to one of claims 29 or 30, characterized in that a unit consisting of a susceptor element (190) and a process chamber ceiling element (191) connected thereto is handled by means of a gripper. 31324R6PCT - 11.09.2025 143 32. Device for depositing layers onto one or more substrates (21), wherein a process chamber (12) is arranged in a housing (2), which is bounded upwards by a process chamber ceiling (13) and downwards by a susceptor arrangement (14, 15, 16) supporting the one or more substrates (21), with a heating device (17) for heating the susceptor arrangement (14, 15, 16), with a gas inlet element (6) for feeding a process gas provided by a gas mixing system (10) into the process chamber (12) and with a lower gas outlet element (18) arranged at the vertical height of the susceptor arrangement (14, 15, 16), characterized in that a second gas outlet element (200) is arranged at another vertical height.

33. Device according to claim 32, characterized in that the second gas outlet element (200) is arranged at the vertical height of the process chamber ceiling (13), and / or that the second gas outlet element (200) surrounds the process chamber (12) arranged circularly around the gas inlet element (6), and / or that the second gas outlet element (200) has a gas collecting channel (201) into which gas outlet openings (202) open, the gas collecting channel (201) being arranged above the gas outlet openings (202), and / or that a side wall (27) of the process chamber (12) connects the first gas outlet element (18) with the second gas outlet element (200), and / or that the susceptor arrangement (14, 15, 16) can be lowered from a process position to a loading / unloading position at a height at which a loading / unloading area can be located. discharge opening (201) is located in a housing wall (4) 31324R6PCT - 11.09.2025 144 and / or that the gas outlet devices (18, 200) are connected to a pump (207) or to separate pumps (207, 208) via separate lines (203, 204) in each of which a throttle valve (205, 206) is arranged, and / or that the second gas outlet device (200) is vertically displaceable, in particular by means of an actuator (209).

34. Method for depositing layers on one or more substrates (21) in a device according to claim 32 or 33, characterized in that the susceptor arrangement (14, 15, 16) together with the heating device (17) is lowered from a process position to a loading / unloading position in which the susceptor arrangement (14, 15, 16) is located below that of the lower gas outlet device (18).

35. Method for depositing layers on one or more substrates (21) in a device according to claim 32 or 33, characterized in that the gas outlet devices (18, 200) with separate lines (203, 204) in which a throttle valve (205, 206) is arranged are connected to a pump (207) or to separate pumps (207, 208), wherein a flow profile within the process chamber (12) is influenced by varying the gas flows through the lines (203, 204).

36. Device for depositing layers onto one or more substrates (21), comprising a susceptor arrangement (14, 15, 16) arranged in a housing (2) with at least two substrate holders (20), comprising a heating device (17) for heating the substrate holders (20), 31324R6PCT - 11.09.2025 145 with a measuring device (22) for measuring the temperature of the substrate holder (20) or of a substrate (21) carried by the substrate holder (20) and with a control device (11) for controlling the temperature to a process temperature, characterized in that each substrate holder (20) is assigned a heating element (213) which can be individually controlled by the control device (11) to an individually specified process temperature.

37. Device according to claim 36, characterized in that the substrate holders (20) are rotatably mounted about a vertical axis and are in particular supported by a rotary-driven gas cushion, and / or that the susceptor arrangement (14, 15, 16) is stationary during operation of the device, and / or that the susceptor arrangement (14, 15, 16) has a disk-shaped susceptor (14) surrounding the gas inlet element (18), and / or that the susceptor arrangement (14, 15, 16) has a substantially rectangular susceptor (14), and / or that the substrate holders (20) are rotatably driven by a gas cushion, and / or that the substrate holders (20) are rotatably driven by a mechanical transmission (216, 217, 218), in particular a gear transmission, and / or that the heating device (17) has several, each locally has coils (206) associated with a substrate holder (20).

38. Method for depositing layers on one or more substrates (21) using a device according to claim 36 or 37, characterized in that the temperature of each substrate holder (20) or each 31324R6PCT - 11.09.2025 146 of the substrate carried by the substrate holder (21) is individually measured with the measuring device (22) and is individually controlled to a process temperature.

39. Device for depositing layers onto one or more substrates (21), comprising a susceptor arrangement (14, 15, 16) arranged in a housing (2) and forming the bottom of a process chamber (12) for receiving the one or more substrates (21), a process chamber ceiling (13) and a gas inlet element (6) for supplying a process gas into the process chamber (12), wherein a height (H) of the process chamber (12) measured between the susceptor arrangement (14, 15, 16) and the process chamber ceiling is variable, characterized in that at least one section (220, 221, 222, 223, 224) of the bottom or the process chamber ceiling (13) consists of a flexible material or is designed as a flexible ramp element (220) and / or that at least one section (220, 221, 222, 223, 224) of the floor or the process chamber ceiling (13) forms a ramp element whose surface facing the process chamber (12) has a variable angle (a) to a horizontal plane (234).

40. Device according to claim 39, characterized in that the flexible or flexurally elastic section (220-224) is formed by a membrane, and / or that the section (220-224) connects the gas inlet element (6) to the susceptor arrangement (14, 15, 16) or to a rigid ceiling plate (225), wherein it is particularly provided that the section (220-224) is fixedly attached to the housing (2) with an end section and 31324R6PCT - 11.09.2025 147 is attached to a vertically movable section of the floor or the process chamber ceiling (13) with another end section, and / or that the entire process chamber ceiling (13) is formed by a flexible bending-elastic element, and / or that an actuator (226) is provided with which at least one section of the process chamber ceiling (13) and / or the process chamber arrangement (14, 15, 16) can be vertically changed.

41. Method for depositing layers on one or more substrates 21 with a device according to claim 39 or 40, characterized in that the height (H) of the process chamber (12) is changed during a deposition process in which one or more layers are deposited on the substrates (21), or during a deposition step in which a layer is deposited on the substrates (21).

42. Device for depositing layers onto one or more substrates (21), comprising a gas inlet element (6) having several vertically arranged gas distribution chambers (8), each of which has a supply line (7) connected to a gas mixing system (10) in which a gas to be fed into the gas distribution chamber (8) is provided, wherein each of the gas distribution chambers (8) has gas outlet openings (9) through which the gas flows into a process chamber (12), wherein the process chamber (12) is bounded upwards by a process chamber ceiling (13) and downwards by a susceptor arrangement (14, 15, 16) on which a substrate (21) to be coated can be placed. 31324R6PCT - 11.09.2025 148 wherein the susceptor arrangement (14, 15, 16) and / or the process chamber ceiling (13) are vertically displaceable to change the height (H) of a process chamber, characterized in that the process chamber ceiling (13) and / or the susceptor arrangement (14, 15, 16) can be displaced from a first operating position in which the gas outlet openings (9) of a first number of gas distribution chambers (8) are free in the direction of the process chamber (12) to a second operating position in which a number of the gas outlet openings (9) of the gas distribution chambers (8) are covered by a narrow surface (230, 231) of the process chamber ceiling (13) and / or the susceptor arrangement (14, 15, 16).

43. Device according to claim 42, characterized in that the process chamber ceiling (13) has, at least in an area adjacent to the gas inlet element (6), a narrow surface (230) extending parallel to and with a small gap to an outer surface (234) of the gas inlet element (6), which in the second operating position inhibits gas flow through the concealed gas outlet opening (9), and / or that a susceptor (14) of the susceptor arrangement (14, 15, 16) has, at least in an area adjacent to the gas inlet element (6), a narrow surface (231) extending parallel to and with a small gap to an outer surface (234) of the gas inlet element (6), which in the second operating position inhibits gas flow through the concealed gas outlet opening (9), and / or that the susceptor arrangement (14, 15, 16) has a rigid body which forms the narrow surface (231) forms, has, which can be displaced in a vertical direction by means of an actuator (233),and / or that the process chamber ceiling (13) has a rigid body forming the narrow surface (230) which can be displaced in a vertical direction by means of an actuator (232), 31324R6PCT - 11.09.2025 149 and / or that the process chamber ceiling (13) and / or the susceptor arrangement (14, 15, 16) can be displaced in such a way that, in a position further displaced compared to the second operating position, the gas outlet openings (9) of several gas distribution chambers (8) are covered by the process chamber ceiling (13) or the susceptor arrangement (14, 15, 16).

44. Method for depositing layers on one or more substrates (21) with a device according to one of claims 42 or 43, characterized in that at least some of the gas outlet openings (9) of one or more gas distribution chambers (8) are shaded by a vertical displacement of the process chamber ceiling (13) or the susceptor arrangement (14, 15, 16).

45. Device for depositing layers onto one or more substrates (21), comprising a gas inlet element (6) having several vertically arranged gas distribution chambers (8) connected to a gas mixing system (10) in which a gas to be fed into the gas distribution chamber (8) is provided, wherein the gas distribution chambers (8) have gas outlet openings (9) in an outer wall (240) through which the gas flows into a process chamber (12), wherein the process chamber (12) is bounded at the top by a process chamber ceiling (13) and at the bottom by a susceptor arrangement (14, 15, 16) on which a substrate (21) to be coated can be placed, wherein the susceptor arrangement (14, 15, 16) and / or the process chamber ceiling (13) can be moved vertically to change the height (H) of the process chamber. 31324R6PCT - 11.09.2025 150 characterized in that a vertical height (K) of at least some of the gas distribution chambers (8) is continuously variable.

46. ​​Device according to claim 45, characterized in that the outer wall (240) is compressible in the vertical direction, and / or that the outer wall (240) is made of an elastically deformable material, and / or that the outer wall (240) extends in a zigzag or wave-like manner in a vertical section plane and consists of surface elements (241, 242) inclined to a vertical line and extending obliquely or in a wave-like manner, and / or that the outer wall (240) consists of surface elements (241, 242) arranged in a zigzag pattern in a section plane, wherein adjacent surface elements (241, 242) form a radially inner edge (243) and a radially outer edge (244) are connected to each other, and / or that the outer wall runs along a wavy line in a section plane, and / or that the gas outlet openings (9) are arranged in one of the surface elements (241, 242) or in the region of the radially inner edge (243) or the radially outer edge (244), and / or that adjacent gas distribution chambers (8) are separated from each other by separating plates (245) extending in a separating plane (42), wherein a radially outer edge of the separating plate (245) is connected to a radially inner or outer edge of a surface element (241, 242) which extends on a truncated cone surface and is flexible in such a way that the cone angle of the truncated cone surface increases, in particular elastically, during a vertical compression of the gas inlet element (6). 31324R6PCT - 11.09.2025 151 and / or that the gas inlet device (6) has a circular plan, and / or that the outer wall (240) is formed by a bellows.

47. Method for depositing layers on one or more substrates (21) with a device according to one of claims 45 or 46, characterized in that a vertical distance between gas outlet openings (9) belonging to different gas distribution chambers (8) is changed by a vertical compression or stretching of the gas inlet element (6).

48. Device for depositing layers onto one or more substrates (21), comprising a gas inlet element (6) having one or more gas distribution chambers (8), wherein the at least one gas distribution chamber (8) comprises a group of several gas distribution segments (250, 251, 252) arranged in an azimuthal direction around a center of the gas inlet element (6), each of which has a supply line (7) open into it, which is connected to a gas mixing system (10) by which a gas to be fed into the gas distribution segments (250, 251, 252) is provided, wherein the group comprises a first gas distribution segment (250) which is flow-connected to a first gas source (254) via a first supply line (257) and a mass flow controller (260) and a valve (264) arranged therein, and a second gas distribution segment (251) which is connected to a second supply line (258) and a mass flow controller (260) and a valve (265) arranged therein is connected to a second gas source (255) via flow, and 31324R6PCT - 11.09.2025 152 a third gas distribution segment (252) which is flow-connected to a third supply line (259) and a mass flow controller (260) and a valve arrangement (261', 261") arranged therein, wherein each of the gas segments (250, 251, 252) has gas outlet openings (9) arranged in an outer wall (240) through which the gas flows into a process chamber (12) in which a substrate (21) can be placed, characterized in that the third gas distribution segment (252) can be flow-connected to the valve arrangement (261', 261") optionally at least to the first gas source (254) or the second gas source (255).

49. Device according to claim 48, characterized in that the first gas source (254) contains a metal-organic gas and the second gas source (255) contains a hydride, and / or that of a plurality of vertically arranged gas distribution chambers (8), at least some have a uniform gas distribution volume which is supplied by only one supply line (7), and / or that the gas distribution chambers (8) having a uniform gas distribution volume are arranged vertically below and / or vertically above the gas distribution chamber (8) having the group-wise arranged gas distribution segments (250, 251, 252), and / or that a gas distribution chamber (8) having a uniform gas distribution volume is connected to a hydride gas source (255) by a gas distribution chamber (8) arranged at the top and a gas distribution chamber (8) arranged at the bottom, each having a uniform gas distribution volume, and / or that the gas distribution segments (254, 255, 256) assigned to a group are arranged with different azimuthal extend at angles around the center, 31324R6PCT - 11.09.2025 153 and / or that the third gas distribution segment (256) can be connected to a valve (261") or optionally to a fourth gas source (255') of a reactive gas.

50. Method for depositing layers on one or more substrates (21) with a device according to claim 48 or 49, characterized in that between a first process step in which a first layer is deposited on the substrate (21) and a second process step in which a second layer is deposited on the substrate, or during a first process step in which a first layer is deposited on the substrate (21), a flow connection of the third gas distribution segment (252) with the first gas source (254) is separated and a flow connection of the third gas distribution segment (252) with the second gas source (255) is established by switching the valve arrangement (261', 261").

51. Device for depositing layers onto one or more substrates (21), comprising a gas inlet element (6) having several vertically arranged gas distribution chambers (270, 271, 272), each having a gas outlet opening (9) for the discharge of a gas into a process chamber (12) in which the substrate (21) can be placed, wherein some of the gas distribution chambers (271, 272) are connected by flow to a gas source (274, 275) containing a reactive gas for depositing the layers, and to a supply line (280, 287) and a mass flow controller (281) and a valve (282) arranged therein. 31324R6PCT - 11.09.2025 154 and with a cleaning gas supply line (279) opening into the process chamber (12), a mass flow controller (281) which is connected to a cleaning gas source (277) via a cleaning gas supply line (279), a mass flow controller (281) and a valve (282), characterized in that one of the gas distribution chambers forms a cleaning gas distribution chamber (270) into which the cleaning gas supply line (279) opens.

52. Device according to claim 51, characterized in that the cleaning gas distribution chamber (270) is arranged vertically between an uppermost gas distribution chamber and a lowermost gas distribution chamber, or that the cleaning gas distribution chamber (270) is a lowermost gas distribution chamber or an uppermost gas distribution chamber, and / or that the supply lines (278, 279, 280) are connected to an inert gas source (276) via a mass flow controller (281) and a valve (282).

53. Method for depositing layers on one or more substrates (21) with a device according to claim 51 or 52, characterized in that before or after a process step in which the reactive gases are fed into the process chamber (12) through the gas distribution chambers (271, 272) associated with them together with an inert gas, a cleaning step is carried out in which the cleaning gas is fed into the process chamber (12) through the cleaning gas distribution chamber (270). 31324R6PCT - 11.09.2025 155 54. Method according to claim 53, characterized in that, during the cleaning step, an inert gas flows into the process chamber (12) through the gas distribution chambers (271, 272), through which a reactive gas flows during the process step.

55. Device or method characterized by one or more of the characterizing features of one of the preceding claims. 31324R6PCT - 11.09.2025

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