High frequency module

Abstract

A high frequency module (1) is provided with: transmission filters (311, 321) for bands (A, B) included in a low-band group; transmission filters (331, 341) for bands (C, D) included in a mid-band group; a semiconductor component (60a) disposed on a main surface (90a) of a module substrate (90); and a semiconductor component (60b) disposed on the main surface (90a) of the module substrate (90). The semiconductor component (60a) includes a switch circuit (61) and a digital control circuit (65a) configured to control the switch circuit (61), and the semiconductor component (60b) includes a switch circuit (62) and a digital control circuit (65b) configured to control the switch circuit (62). The digital control circuits (65a, 65b) are disposed between the switch circuits (61, 62) in a plan view of the module substrate (90).

Description

High-frequency module

[0001] The present invention relates to a high-frequency module.

[0002] In mobile communication devices such as mobile phones, in particular, with the progress of multi-band, the layout configuration of circuit elements constituting the high-frequency front-end circuit has become complicated. In Patent Document 1, a high-frequency module has been proposed in which a metal shield plate is arranged between a power amplifier corresponding to a low-band group and a power amplifier corresponding to a middle-band group and a high-band group, so that deterioration of the quality of a transmission signal can be suppressed.

[0003] International Publication No. 2022 / 044456

[0004] However, in a high-frequency module corresponding to a plurality of band groups, further suppression of deterioration of the quality of a transmission signal is desired.

[0005] Therefore, the present invention provides a high-frequency module corresponding to a plurality of band groups, which can suppress deterioration of the quality of a transmission signal.

[0006] A high-frequency module according to one aspect of the present invention includes a module substrate having a first main surface and a second main surface facing each other, a first power amplifier circuit and a second power amplifier circuit disposed on the module substrate, a first transmit filter disposed on the module substrate and having a passband including the transmit bandwidth of a first band included in a first band group, a second transmit filter disposed on the module substrate and having a passband including the transmit bandwidth of a second band included in a first band group, a third transmit filter disposed on the module substrate and having a passband including the transmit bandwidth of a third band included in a second band group that is higher than the first band group, a fourth transmit filter disposed on the module substrate and having a passband including the transmit bandwidth of a fourth band included in a second band group, a first semiconductor component disposed on one of the first and second main surfaces of the module substrate, and a module The module comprises a first main surface and a second main surface of a substrate, the first semiconductor component comprising a first switch circuit including a first common terminal connected to the output terminal of a first power amplifier circuit, a first select terminal connected to a first transmit filter, and a second select terminal connected to a second transmit filter, and a first digital control circuit configured to control the first switch circuit, the second semiconductor component comprising a second switch circuit including a second common terminal connected to the output terminal of a second power amplifier circuit, a third select terminal connected to a third transmit filter, and a fourth select terminal connected to a fourth transmit filter, and a second digital control circuit configured to control the second switch circuit, the first digital control circuit and the second digital control circuit being arranged between the first switch circuit and the second switch circuit in a plan view of the module substrate.

[0007] A high-frequency module according to one aspect of the present invention includes a module substrate having a first main surface and a second main surface facing each other, a first power amplifier circuit and a second power amplifier circuit disposed on the module substrate, a first transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a first band included in a first band group, a second transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a second band included in a first band group, a third transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a third band included in a second band group that is higher than the first band group, and a second band The module comprises: a fourth transmit filter having a passband that includes the transmit bandwidth of a fourth band included in the group; a first semiconductor component disposed on one of the first and second main surfaces of the module board, which includes a first common terminal connected to the output terminal of a first power amplifier circuit, a first select terminal connected to the first transmit filter, and a second select terminal connected to the second transmit filter; and a second semiconductor component disposed on the other of the first and second main surfaces of the module board, which includes a second common terminal connected to the output terminal of a second power amplifier circuit, a third select terminal connected to the third transmit filter, and a fourth select terminal connected to the fourth transmit filter.

[0008] According to the present invention, in a high-frequency module that supports multiple band groups, it is possible to suppress the degradation of the quality of the transmitted signal.

[0009] Figure 1 is a configuration diagram of a communication device according to Embodiment 1. Figure 2 is a circuit configuration diagram of a high-frequency module according to Embodiment 1. Figure 3 is a plan view of a high-frequency module according to Embodiment 1. Figure 4 is a plan view of a high-frequency module according to Embodiment 1. Figure 5 is a partial cross-sectional view of a high-frequency module according to Embodiment 1. Figure 6 is a plan view of a semiconductor component according to Embodiment 1. Figure 7 is a plan view of a high-frequency module according to Modification 1 of Embodiment 1. Figure 8 is a partial cross-sectional view of a high-frequency module according to Modification 2 of Embodiment 1. Figure 9 is a plan view of a semiconductor component according to Modification 3 of Embodiment 1. Figure 10 is a plan view of a high-frequency module according to Modification 4 of Embodiment 1. Figure 11 is a plan view of a high-frequency module according to Modification 4 of Embodiment 1. Figure 12 is a plan view of a high-frequency module according to Embodiment 2. Figure 13 is a plan view of a high-frequency module according to Embodiment 2. Figure 14 is a partial cross-sectional view of a high-frequency module according to Embodiment 2. Figure 15 is a partial cross-sectional view of a high-frequency module according to Embodiment 2.

[0010] The embodiments of the present invention will be described in detail below with reference to the drawings. Note that the embodiments described below are all general or specific examples. The numerical values, shapes, materials, components, arrangement of components, and connection configurations shown in the following embodiments are examples only and are not intended to limit the present invention.

[0011] The figures are schematic diagrams that have been appropriately emphasized, omitted, or had their proportions adjusted to illustrate the present invention, and are not necessarily strictly accurate representations. Actual shapes, positional relationships, and proportions may differ. In each figure, substantially identical components are denoted by the same reference numerals, and redundant explanations may be omitted or simplified.

[0012] In the following figures, the x and y axes are mutually orthogonal axes on a plane parallel to the main surface of the module board. The z axis is perpendicular to the main surface of the module board, with its positive direction indicating upwards and its negative direction indicating downwards.

[0013] In the following explanation, "connected" includes not only cases where there is a direct connection via terminals and / or wiring conductors, but also cases where there is an electrical connection via other circuit elements. "C is connected between A and B" means that one end of C is connected to A and the other end of C is connected to B, and that C is arranged in series in the path between A and B. "Path between A and B" means a path consisting of conductors that electrically connect A to B.

[0014] The "passband of a filter" is defined as the portion of the frequency spectrum transmitted by the filter, specifically the frequency band where the output power does not attenuate by more than 3 dB below the maximum output power. Therefore, the passband of a band-pass filter is defined as the frequency range between two points where the output power is attenuated by 3 dB below the maximum output power.

[0015] "Transmitting band" refers to the frequency band used for transmission in a communication device, and "receiving band" refers to the frequency band used for reception in a communication device. For example, in frequency division duplex (FDD) bands, different frequency bands (uplink band and downlink band) are used as the transmitting band and the receiving band. Also, for example, in time division duplex (TDD) bands, the same frequency band is used for both the transmitting and receiving bands.

[0016] The term "harmonic band of a specified frequency band" refers to the frequency band from n times the low-frequency end of the specified frequency band to n times the high-frequency end of the specified frequency band, where n is a natural number greater than or equal to 2. For example, the second harmonic band of a specified frequency band is the frequency band from twice the low-frequency end to twice the high-frequency end of the specified frequency band, and the third harmonic band of a specified frequency band is the frequency band from three times the low-frequency end to three times the high-frequency end of the specified frequency band. If no order is specified, "harmonic band" refers to the harmonic bands of all orders.

[0017] A "terminal" refers to the point where a conductor within an element terminates. However, if the impedance of the conductors between elements is sufficiently low, a terminal can be interpreted not only as a single point, but as any point on the conductor between elements, or even the entire conductor.

[0018] "A component is placed on a substrate" includes a component being placed on the main surface of the substrate, and a component being placed within the substrate. "A component is placed on the main surface of the substrate" includes a component being placed in contact with the main surface of the substrate, as well as a component being placed above the main surface without contact with it (for example, a component being stacked on top of another component placed in contact with the main surface). Furthermore, "a component is placed on the main surface of the substrate" may also include a component being placed in a recess formed in the main surface. "A component is placed within the substrate" includes a component being encapsulated within the substrate, as well as a component being entirely placed between the two main surfaces of the substrate but with part of the component not covered by the substrate, and a component being placed within the substrate only.

[0019] "A is located between B and C" means that at least one of the line segments connecting any point in B and any point in C passes through A. "A is located closer to C than B" means that the distance between A and C is shorter than the distance between B and C. Here, "the distance between A(B) and C" means the length of the shortest line segment (i.e., the shortest distance) among the line segments connecting any point on the surface of A(B) and any point on the surface of C.

[0020] "Plan view of the module board" means viewing an object by orthogonally projecting it onto the xy-plane in the negative z-axis direction. "In the plan view of the module board, A overlaps with B" means that the region of A projected onto the xy-plane overlaps with the region of B projected onto the xy-plane.

[0021] Furthermore, terms indicating relationships between elements such as "parallel" and "perpendicular," terms indicating the shape of elements such as "straight line," and numerical ranges do not represent only strict meanings, but also include substantially equivalent ranges, such as errors of a few percent.

[0022] (Embodiment 1) Embodiment 1 will be described below.

[0023] [1.1. Configuration of the Communication Device] First, the configuration of the communication device 5 according to this embodiment will be described with reference to Figure 1. Figure 1 is a diagram of the configuration of the communication device 5 according to this embodiment.

[0024] Figure 1 shows an exemplary configuration, and the communication device 5 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the communication device 5 provided below should not be interpreted as restrictive.

[0025] The communication device 5 can be used to provide wireless connectivity. For example, the communication device 5 can be implemented in a UE (User Equipment) on a cellular network (also called a mobile network) such as a mobile phone, smartphone, tablet computer, or wearable device. In another example, by implementing the communication device 5, wireless connectivity can be provided to IoT (Internet of Things) sensor devices, medical / healthcare devices, cars, unmanned aerial vehicles (UAVs) (so-called drones), and automated guided vehicles (AGVs). In yet another example, by implementing the communication device 5, wireless connectivity can also be provided in a wireless access point or wireless hotspot.

[0026] The communication device 5 comprises a high-frequency module 1, antennas 2a, 2b, 2c, and 2d, an RFIC (Radio Frequency Integrated Circuit) 3, and a BBIC (Baseband Integrated Circuit) 4.

[0027] The high-frequency module 1 can transmit high-frequency signals between antennas 2a to 2d and RFIC 3. The circuit configuration of the high-frequency module 1 will be described later with reference to Figure 2.

[0028] Antennas 2a to 2d are connected to the high-frequency module 1. Antennas 2a to 2d can receive high-frequency signals from the high-frequency module 1 and transmit them to the outside of the communication device 5. Furthermore, antennas 2a to 2d can receive high-frequency signals from outside the communication device 5 and supply them to the high-frequency module 1. Note that some or all of antennas 2a to 2d do not need to be included in the communication device 5. In addition, the communication device 5 may be equipped with one or more antennas in addition to antennas 2a to 2d.

[0029] RFIC3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, RFIC3 can process the transmission signal input from BBIC4 by upconversion or the like, and output the high-frequency transmission signal generated by this signal processing to the high-frequency module 1. Furthermore, RFIC3 can also process the high-frequency reception signal input via the high-frequency module 1 by downconversion or the like, and output the reception signal generated by this signal processing to BBIC4. RFIC3 may also have a control unit that controls switches and amplifiers, etc., of the high-frequency module 1. Note that some or all of the control unit functions of RFIC3 may be included outside of RFIC3, for example, in BBIC4 or the high-frequency module 1.

[0030] BBIC4 is a baseband signal processing circuit that processes signals using a frequency band lower than the high-frequency signal transmitted by the high-frequency module 1. Examples of signals processed by BBIC4 include image signals for image display and / or voice signals for communication via a speaker. Note that BBIC4 does not necessarily have to be included in the communication device 5.

[0031] [1.2. Circuit Configuration of High-Frequency Module 1] Next, the circuit configuration of the high-frequency module 1 according to this embodiment will be described with reference to Figure 2. Figure 2 is a circuit diagram of the high-frequency module 1 according to this embodiment.

[0032] Figure 2 shows an exemplary circuit configuration, and the high-frequency module 1 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be interpreted as restrictive.

[0033] The high-frequency module 1 includes power amplification circuits 11, 12, 13 and 14, baluns 15, 16, 17 and 18, low-noise amplification circuits 21, 22, 23, 24, 25 and 26, duplexers 31, 32, 33 and 34, transmit / receive filters 35, 36, 37 and 38, matching circuits 41, 42, 43 and 44, switch circuits 51, 52, 53, 54, 61, 62, 63 and 64, antenna connection terminals 101, 102, 103 and 104, high-frequency input terminals 111, 112, 113 and 114, high-frequency output terminals 121, 122, 123, 124, 125 and 126, and a digital control terminal 130.

[0034] Antenna connection terminals 101 to 104 are external connection terminals of the high-frequency module 1. Antenna connection terminals 101 and 102 are examples of first and second antenna connection terminals, respectively. Antenna connection terminals 101 to 104 are connected to antennas 2a to 2d outside the high-frequency module 1, and to switch circuits 51 to 54 inside the high-frequency module 1, respectively.

[0035] The high-frequency input terminals 111 to 114 are external connection terminals of the high-frequency module 1 and are terminals for receiving high-frequency signals from the RFIC 3. The high-frequency input terminals 111 to 114 are connected to the RFIC 3 outside the high-frequency module 1 and are connected to the power amplification circuits 11 to 14 inside the high-frequency module 1, respectively.

[0036] The high-frequency output terminals 121 to 126 are external connection terminals of the high-frequency module 1 and are terminals for supplying high-frequency signals to the RFIC 3. The high-frequency output terminals 121 to 126 are connected to the RFIC 3 outside the high-frequency module 1 and are connected to the low-noise amplification circuits 21 to 26 inside the high-frequency module 1, respectively.

[0037] The digital control terminal 130 is an external connection terminal of the high-frequency module 1 and is a terminal for receiving digital control signals from the RFIC 3. The digital control terminal 130 is connected to the RFIC 3 outside the high-frequency module 1 and to the PA control circuit 70 inside the high-frequency module 1. In this embodiment, a source-synchronous serial data signal is used as the digital control signal. Alternatively, a clock-embedded serial data signal may be used as the digital control signal.

[0038] The power amplifier circuit 11 is an example of a first power amplifier circuit and is connected between the high-frequency input terminal 111 and the balun 15. Specifically, the input terminal of the power amplifier circuit 11 is connected to the high-frequency input terminal 111, and the output terminal of the power amplifier circuit 11 is connected to the balun 15. The power amplifier circuit 11 can amplify the transmitted signals of bands A and B using power supplied from a power source (not shown).

[0039] In this embodiment, the power amplifier circuit 11 is a multi-stage amplifier circuit and a differential amplifier type amplifier circuit. The power amplifier circuit 11 includes power amplifiers T11, T12 and T13 and a balun B14.

[0040] The power amplifier T11 is a drive stage amplifier and is connected between the high-frequency input terminal 111 and the balun B14. Specifically, the input terminal of the power amplifier T11 is connected to the high-frequency input terminal 111, and the output terminal of the power amplifier T11 is connected to the balun B14.

[0041] Power amplifiers T12 and T13 are power stage amplifiers, a pair of power amplifiers connected in parallel. Power amplifiers T12 and T13 are connected between balun B14 and balun 15. Specifically, the input terminals of power amplifiers T12 and T13 are connected to balun B14, and the output terminals of power amplifiers T12 and T13 are connected to balun 15.

[0042] The balun B14 includes a primary coil L141 and a secondary coil L142 that can be electromagnetically coupled to the primary coil L141. One end of the primary coil L141 is connected to the output end of the power amplifier T11, and the other end of the primary coil L141 is connected to the ground. One end of the secondary coil L142 is connected to the input end of the power amplifier T12, and the other end of the secondary coil L142 is connected to the input end of the power amplifier T13. The balun B14 can convert the unbalanced signal (single-ended signal) amplified by the power amplifier T11 into a balanced signal (differential signal) and supply the balanced signal to the two power amplifiers T12 and T13 respectively.

[0043] Note that the circuit configuration of the power amplification circuit 11 is not limited to the configuration shown in FIG. 2. For example, the power amplification circuit 11 may not be a multi-stage amplification circuit and may be a single-stage amplification circuit. In this case, the power amplification circuit 11 may not include the power amplifier T11. Also, for example, the power amplification circuit 11 may not be a differential amplification type amplification circuit and may be a Doherty amplification circuit. Also, for example, in the power amplification circuit 11, the phase difference between the two high-frequency signals amplified by the power amplifiers T12 and T13 may not be 180 degrees and may be 90 degrees. In this case, each of the baluns B14 and 15 may be replaced with a quadrature hybrid coupler. Also, for example, the power amplification circuit 11 may amplify and output the unbalanced signal as it is. In this case, the power amplification circuit 11 may not include the power amplifier T13 and the balun B14, and the high-frequency module 1 may not include the balun 15.

[0044] The power amplification circuit 12 is an example of a second power amplification circuit and is connected between the high-frequency input terminal 112 and the balun 16. Specifically, the input end of the power amplification circuit 12 is connected to the high-frequency input terminal 112, and the output end of the power amplification circuit 12 is connected to the balun 16. The power amplification circuit 12 can amplify the transmission signals in bands C and D using the power supplied from a power source (not shown).

[0045] In the present embodiment, the power amplification circuit 12 is a multi-stage amplification circuit and is also a differential amplification type amplification circuit. The power amplification circuit 12 includes power amplifiers T21, T22, and T23 and a balun B24.

[0046] The power amplifier T21 is a drive-stage amplifier and is connected between the high-frequency input terminal 112 and the balun B24. Specifically, the input end of the power amplifier T21 is connected to the high-frequency input terminal 112, and the output end of the power amplifier T21 is connected to the balun B24.

[0047] The power amplifiers T22 and T23 are power-stage amplifiers and are a pair of power amplifiers connected in parallel. The power amplifiers T22 and T23 are connected between the balun B24 and the balun 16. Specifically, the input ends of the power amplifiers T22 and T23 are connected to the balun B24, and the output ends of the power amplifiers T22 and T23 are connected to the balun 16.

[0048] The balun B24 includes a primary coil L241 and a secondary coil L242 that can be electromagnetically coupled to the primary coil L241. One end of the primary coil L241 is connected to the output end of the power amplifier T21, and the other end of the primary coil L241 is connected to the ground. One end of the secondary coil L242 is connected to the input end of the power amplifier T22, and the other end of the secondary coil L242 is connected to the input end of the power amplifier T23. The balun B24 can convert the unbalanced signal amplified by the power amplifier T21 into a balanced signal and supply the balanced signal to the two power amplifiers T22 and T23 respectively.

[0049] Note that the circuit configuration of the power amplification circuit 12 is not limited to the configuration shown in FIG. 2. For example, the power amplification circuit 12 may not be a multi-stage amplification circuit and may be a single-stage amplification circuit. In this case, the power amplification circuit 12 may not include the power amplifier T21. Also, for example, the power amplification circuit 12 may not be a differential amplification type amplification circuit and may be a Doherty amplification circuit. Also, for example, in the power amplification circuit 12, the phase difference between the two high-frequency signals amplified by the power amplifiers T22 and T23 may not be 180 degrees and may be 90 degrees. In this case, each of the baluns B24 and 16 may be replaced with a quadrature hybrid coupler. Also, for example, the power amplification circuit 12 may amplify and output the unbalanced signal as it is. In this case, the power amplification circuit 12 may not include the power amplifier T23 and the balun B24, and the high-frequency module 1 may not include the balun 16.

[0050] The power amplifier circuit 13 is an example of a third power amplifier circuit and is connected between the high-frequency input terminal 113 and the balun 17. Specifically, the input terminal of the power amplifier circuit 13 is connected to the high-frequency input terminal 113, and the output terminal of the power amplifier circuit 13 is connected to the balun 17. The power amplifier circuit 13 can amplify the transmitted signals of bands E and F using power supplied from a power source (not shown). Note that the power amplifier circuit 13 does not necessarily have to be included in the high-frequency module 1.

[0051] In this embodiment, the power amplifier circuit 13 is a multi-stage amplifier circuit and a differential amplifier type amplifier circuit. The power amplifier circuit 13 includes power amplifiers T31, T32 and T33 and a balun B34.

[0052] The power amplifier T31 is a driver stage amplifier and is connected between the high-frequency input terminal 113 and the balun B34. Specifically, the input terminal of the power amplifier T31 is connected to the high-frequency input terminal 113, and the output terminal of the power amplifier T31 is connected to the balun B34.

[0053] Power amplifiers T32 and T33 are power stage amplifiers, a pair of power amplifiers connected in parallel. Power amplifiers T32 and T33 are connected between balun B34 and balun 17. Specifically, the input terminals of power amplifiers T32 and T33 are connected to balun B34, and the output terminals of power amplifiers T32 and T33 are connected to balun 17.

[0054] Balun B34 includes a primary coil L341 and a secondary coil L342 that can be electromagnetically coupled to the primary coil L341. One end of the primary coil L341 is connected to the output terminal of power amplifier T31, and the other end of the primary coil L341 is connected to ground. One end of the secondary coil L342 is connected to the input terminal of power amplifier T32, and the other end of the secondary coil L342 is connected to the input terminal of power amplifier T33. Balun B34 can convert the unbalanced signal amplified by power amplifier T31 into a balanced signal and supply the balanced signal to the two power amplifiers T32 and T33, respectively.

[0055] Note that the circuit configuration of the power amplifier circuit 13 is not limited to the configuration shown in Figure 2. For example, the power amplifier circuit 13 does not have to be a multi-stage amplifier circuit, but may be a single-stage amplifier circuit. In this case, the power amplifier circuit 13 does not have to include the power amplifier T31. Also, for example, the power amplifier circuit 13 does not have to be a differential amplifier type amplifier circuit, but may be a Doherty amplifier circuit. Also, for example, in the power amplifier circuit 13, the phase difference between the two high-frequency signals amplified by the power amplifiers T32 and T33 does not have to be 180 degrees, but may be 90 degrees. In this case, each of the baluns B34 and 17 may be replaced with a quadrature hybrid coupler. Also, for example, the power amplifier circuit 13 may amplify and output an unbalanced signal as is. In this case, the power amplifier circuit 13 does not have to include the power amplifier T33 and the balun B34, and the high-frequency module 1 does not have to include the balun 17.

[0056] The power amplifier circuit 14 is an example of a fourth power amplifier circuit and is connected between the high-frequency input terminal 114 and the balun 18. Specifically, the input terminal of the power amplifier circuit 14 is connected to the high-frequency input terminal 114, and the output terminal of the power amplifier circuit 14 is connected to the balun 18. The power amplifier circuit 14 can amplify the transmitted signals of bands G and H using power supplied from a power source (not shown). Note that the power amplifier circuit 14 does not necessarily have to be included in the high-frequency module 1.

[0057] In this embodiment, the power amplifier circuit 14 is a multi-stage amplifier circuit and a differential amplifier type amplifier circuit. The power amplifier circuit 14 includes power amplifiers T41, T42 and T43 and a balun B44.

[0058] The power amplifier T41 is a driver stage amplifier and is connected between the high-frequency input terminal 114 and the balun B44. Specifically, the input terminal of the power amplifier T41 is connected to the high-frequency input terminal 114, and the output terminal of the power amplifier T41 is connected to the balun B44.

[0059] Power amplifiers T42 and T43 are power stage amplifiers, a pair of power amplifiers connected in parallel. Power amplifiers T42 and T43 are connected between balun B44 and balun 18. Specifically, the input terminals of power amplifiers T42 and T43 are connected to balun B44, and the output terminals of power amplifiers T42 and T43 are connected to balun 18.

[0060] Balun B44 includes a primary coil L441 and a secondary coil L442 that can be electromagnetically coupled to the primary coil L441. One end of the primary coil L441 is connected to the output terminal of power amplifier T41, and the other end of the primary coil L441 is connected to ground. One end of the secondary coil L442 is connected to the input terminal of power amplifier T42, and the other end of the secondary coil L442 is connected to the input terminal of power amplifier T43. Balun B44 can convert the unbalanced signal amplified by power amplifier T41 into a balanced signal and supply the balanced signal to the two power amplifiers T42 and T43, respectively.

[0061] Note that the circuit configuration of the power amplifier circuit 14 is not limited to the configuration shown in Figure 2. For example, the power amplifier circuit 14 does not have to be a multi-stage amplifier circuit, but may be a single-stage amplifier circuit. In this case, the power amplifier circuit 14 does not have to include the power amplifier T41. Also, for example, the power amplifier circuit 14 does not have to be a differential amplifier type amplifier circuit, but may be a Doherty amplifier circuit. Also, for example, in the power amplifier circuit 14, the phase difference between the two high-frequency signals amplified by the power amplifiers T42 and T43 does not have to be 180 degrees, but may be 90 degrees. In this case, each of the baluns B44 and 18 may be replaced with a quadrature hybrid coupler. Also, for example, the power amplifier circuit 14 may amplify and output an unbalanced signal as is. In this case, the power amplifier circuit 14 does not have to include the power amplifier T43 and the balun B44, and the high-frequency module 1 does not have to include the balun 18.

[0062] The balun 15 includes a primary coil 151 and a secondary coil 152 that can be electromagnetically coupled to the primary coil 151. One end of the primary coil 151 is connected to the output terminal of the power amplifier T12, and the other end of the primary coil 151 is connected to the output terminal of the power amplifier T13. One end of the secondary coil 152 is connected to the matching circuit 41, and the other end of the secondary coil 152 is connected to ground. The balun 15 can convert the balanced signal amplified by the power amplifier circuit 11 into an unbalanced signal. Note that if the power amplifier circuit 11 outputs an unbalanced signal, the balun 15 does not need to be included in the high-frequency module 1.

[0063] The balun 16 includes a primary coil 161 and a secondary coil 162 that can be electromagnetically coupled to the primary coil 161. One end of the primary coil 161 is connected to the output terminal of the power amplifier T22, and the other end of the primary coil 161 is connected to the output terminal of the power amplifier T23. One end of the secondary coil 162 is connected to the matching circuit 42, and the other end of the secondary coil 162 is connected to ground. The balun 16 can convert the balanced signal amplified by the power amplifier circuit 12 into an unbalanced signal. Note that if the power amplifier circuit 12 outputs an unbalanced signal, the balun 16 does not need to be included in the high-frequency module 1.

[0064] The balun 17 includes a primary coil 171 and a secondary coil 172 that can be electromagnetically coupled to the primary coil 171. One end of the primary coil 171 is connected to the output terminal of the power amplifier T32, and the other end of the primary coil 171 is connected to the output terminal of the power amplifier T33. One end of the secondary coil 172 is connected to the matching circuit 43, and the other end of the secondary coil 172 is connected to ground. The balun 17 can convert the balanced signal amplified by the power amplification circuit 13 into an unbalanced signal. Note that if the power amplification circuit 13 outputs an unbalanced signal, the balun 17 does not need to be included in the high-frequency module 1.

[0065] The balun 18 includes a primary coil 181 and a secondary coil 182 that can be electromagnetically coupled to the primary coil 181. One end of the primary coil 181 is connected to the output terminal of the power amplifier T42, and the other end of the primary coil 181 is connected to the output terminal of the power amplifier T43. One end of the secondary coil 182 is connected to the matching circuit 44, and the other end of the secondary coil 182 is connected to ground. The balun 18 can convert the balanced signal amplified by the power amplification circuit 14 into an unbalanced signal. Note that if the power amplification circuit 14 outputs an unbalanced signal, the balun 18 does not need to be included in the high-frequency module 1.

[0066] The low-noise amplification circuit 21 is connected between the duplexer 31 and the high-frequency output terminal 121. Specifically, the input terminal of the low-noise amplification circuit 21 is connected to the duplexer 31, and the output terminal of the low-noise amplification circuit 21 is connected to the high-frequency output terminal 121. The low-noise amplification circuit 21 can amplify the received signal of band A using power supplied from a power source (not shown).

[0067] The low-noise amplification circuit 22 is connected between the duplexer 32 and the high-frequency output terminal 122. Specifically, the input terminal of the low-noise amplification circuit 22 is connected to the duplexer 32, and the output terminal of the low-noise amplification circuit 22 is connected to the high-frequency output terminal 122. The low-noise amplification circuit 22 can amplify the received signal in band B using power supplied from a power supply (not shown).

[0068] The low-noise amplification circuit 23 is connected between the duplexer 33 and the high-frequency output terminal 123. Specifically, the input terminal of the low-noise amplification circuit 23 is connected to the duplexer 33, and the output terminal of the low-noise amplification circuit 23 is connected to the high-frequency output terminal 123. The low-noise amplification circuit 23 can amplify the received signal in band C using power supplied from a power supply (not shown).

[0069] The low-noise amplification circuit 24 is connected between the duplexer 34 and the high-frequency output terminal 124. Specifically, the input terminal of the low-noise amplification circuit 24 is connected to the duplexer 34, and the output terminal of the low-noise amplification circuit 24 is connected to the high-frequency output terminal 124. The low-noise amplification circuit 24 can amplify the received signal in band D using power supplied from a power supply (not shown).

[0070] The low-noise amplification circuit 25 is connected between the switch circuit 63 and the high-frequency output terminal 125. Specifically, the input terminal of the low-noise amplification circuit 25 is connected to the switch circuit 63, and the output terminal of the low-noise amplification circuit 25 is connected to the high-frequency output terminal 125. The low-noise amplification circuit 25 can amplify the received signals of bands E and F using power supplied from a power supply (not shown).

[0071] The low-noise amplification circuit 26 is connected between the switch circuit 64 and the high-frequency output terminal 126. Specifically, the input terminal of the low-noise amplification circuit 26 is connected to the switch circuit 64, and the output terminal of the low-noise amplification circuit 26 is connected to the high-frequency output terminal 126. The low-noise amplification circuit 26 can amplify the received signals of bands G and H using power supplied from a power supply (not shown).

[0072] Furthermore, some or all of the low-noise amplification circuits 21 to 26 do not need to be included in the high-frequency module 1.

[0073] The duplexer 31 is connected between the antenna connection terminal 101 and the power amplification circuit 11 and the low-noise amplification circuit 21. The duplexer 31 includes a transmit filter 311 and a receive filter 312, and can separate the transmit signal and the receive signal of band A.

[0074] The transmit filter 311 is an example of a first transmit filter and is a bandpass filter having a passband that includes the transmit bandwidth (A-Tx) of band A. The transmit filter 311 can pass signals within the transmit bandwidth of band A and attenuate signals outside the transmit bandwidth of band A. One end of the transmit filter 311 is connected to the select terminal 511 of the switch circuit 51, and the other end of the transmit filter 311 is connected to the select terminal 611 of the switch circuit 61.

[0075] The receiving filter 312 is an example of a first receiving filter and is a bandpass filter having a passband that includes the receiving band (A-Rx) of band A. The receiving filter 312 can pass signals within the receiving band of band A and attenuate signals outside the receiving band of band A. One end of the receiving filter 312 is connected to the selection terminal 511 of the switch circuit 51, and the other end of the receiving filter 312 is connected to the low-noise amplification circuit 21. Note that the receiving filter 312 does not necessarily have to be included in the high-frequency module 1.

[0076] The duplexer 32 is connected between the antenna connection terminal 101 and the power amplification circuit 11 and the low-noise amplification circuit 22. The duplexer 32 includes a transmit filter 321 and a receive filter 322, which can separate the transmit and receive signals of band B.

[0077] The transmit filter 321 is an example of a second transmit filter and is a bandpass filter having a passband that includes the transmit bandwidth (B-Tx) of band B. The transmit filter 321 can pass signals within the transmit bandwidth of band B and attenuate signals outside the transmit bandwidth of band B. One end of the transmit filter 321 is connected to the select terminal 512 of the switch circuit 51, and the other end of the transmit filter 321 is connected to the select terminal 612 of the switch circuit 61.

[0078] The receiving filter 322 is a bandpass filter having a passband that includes the receiving band of band B (B-Rx). The receiving filter 322 can pass signals within the receiving band of band B and attenuate signals outside the receiving band of band B. One end of the receiving filter 322 is connected to the selection terminal 512 of the switch circuit 51, and the other end of the receiving filter 322 is connected to the low-noise amplifier circuit 22. Note that the receiving filter 322 does not necessarily have to be included in the high-frequency module 1.

[0079] The duplexer 33 is connected between the antenna connection terminal 102 and the power amplification circuit 12 and the low-noise amplification circuit 23. The duplexer 33 includes a transmit filter 331 and a receive filter 332, which can separate the transmit and receive signals of band C.

[0080] The transmit filter 331 is an example of a third transmit filter and is a bandpass filter having a passband that includes the transmit bandwidth (C-Tx) of band C. The transmit filter 331 can pass signals within the transmit bandwidth of band C and attenuate signals outside the transmit bandwidth of band C. One end of the transmit filter 331 is connected to the select terminal 521 of the switch circuit 52, and the other end of the transmit filter 331 is connected to the select terminal 621 of the switch circuit 62.

[0081] The receiving filter 332 is a bandpass filter having a passband that includes the receiving band (C-Rx) of band C. The receiving filter 332 can pass signals within the receiving band of band C and attenuate signals outside the receiving band of band C. One end of the receiving filter 332 is connected to the select terminal 521 of the switch circuit 52, and the other end of the receiving filter 332 is connected to the low-noise amplifier circuit 23. Note that the receiving filter 332 does not necessarily have to be included in the high-frequency module 1.

[0082] The duplexer 34 is connected between the antenna connection terminal 102 and the power amplification circuit 12 and the low-noise amplification circuit 24. The duplexer 34 includes a transmit filter 341 and a receive filter 342, which can separate the transmit and receive signals of band D.

[0083] The transmit filter 341 is an example of a fourth transmit filter and is a bandpass filter having a passband that includes the transmit bandwidth (D-Tx) of band D. The transmit filter 341 can pass signals within the transmit bandwidth of band D and attenuate signals outside the transmit bandwidth of band D. One end of the transmit filter 341 is connected to the select terminal 522 of the switch circuit 52, and the other end of the transmit filter 341 is connected to the select terminal 622 of the switch circuit 62.

[0084] The receiving filter 342 is a bandpass filter having a passband that includes the receiving band (D-Rx) of band D. The receiving filter 342 can pass signals within the receiving band of band D and attenuate signals outside the receiving band of band D. One end of the receiving filter 342 is connected to the selection terminal 522 of the switch circuit 52, and the other end of the receiving filter 342 is connected to the low-noise amplification circuit 24. Note that the receiving filter 342 does not necessarily have to be included in the high-frequency module 1.

[0085] The transmit / receive filter 35 is an example of a fifth transmit filter and is connected between the antenna connection terminal 103 and the power amplifier circuit 13 and the low-noise amplifier circuit 25. The transmit / receive filter 35 is a bandpass filter having a passband that includes the transmit band and receive band (E-TRx) of band E. The transmit / receive filter 35 can pass signals within the transmit band and receive band of band E and attenuate signals outside the transmit band and receive band of band E. One end of the transmit / receive filter 35 is connected to the select terminal 531 of the switch circuit 53, and the other end of the transmit / receive filter 35 is connected to the select terminal 631 of the switch circuit 63. Note that the transmit / receive filter 35 does not necessarily have to be included in the high-frequency module 1.

[0086] The transmit / receive filter 36 is an example of a sixth transmit filter and is connected between the antenna connection terminal 103 and the power amplifier circuit 13 and the low-noise amplifier circuit 25. The transmit / receive filter 36 is a bandpass filter having a passband that includes the transmit band and receive band (F-TRx) of band F. The transmit / receive filter 36 can pass signals within the transmit band and receive band of band F and attenuate signals outside the transmit band and receive band of band F. One end of the transmit / receive filter 36 is connected to the select terminal 532 of the switch circuit 53, and the other end of the transmit / receive filter 36 is connected to the select terminal 632 of the switch circuit 63. Note that the transmit / receive filter 36 does not necessarily have to be included in the high-frequency module 1.

[0087] The transmit / receive filter 37 is an example of a seventh transmit filter and is connected between the antenna connection terminal 104 and the power amplifier circuit 14 and the low-noise amplifier circuit 26. The transmit / receive filter 37 is a bandpass filter having a passband that includes the transmit band and receive band (G-TRx) of band G. The transmit / receive filter 37 can pass signals within the transmit band and receive band of band G and attenuate signals outside the transmit band and receive band of band G. One end of the transmit / receive filter 37 is connected to the select terminal 541 of the switch circuit 54, and the other end of the transmit / receive filter 37 is connected to the select terminal 641 of the switch circuit 64. Note that the transmit / receive filter 37 does not necessarily have to be included in the high-frequency module 1.

[0088] The transmit / receive filter 38 is an example of an eighth transmit filter and is connected between the antenna connection terminal 104 and the power amplifier circuit 14 and the low-noise amplifier circuit 26. The transmit / receive filter 38 is a bandpass filter having a passband that includes the transmit band and receive band (H-TRx) of band H. The transmit / receive filter 38 can pass signals within the transmit band and receive band of band H and attenuate signals outside the transmit band and receive band of band H. One end of the transmit / receive filter 38 is connected to the select terminal 542 of the switch circuit 54, and the other end of the transmit / receive filter 38 is connected to the select terminal 642 of the switch circuit 64. Note that the transmit / receive filter 38 does not necessarily have to be included in the high-frequency module 1.

[0089] Note that the filters described above are not limited to bandpass filters. Some or all of the filters may be band-elimination filters, high-pass filters, or low-pass filters.

[0090] The matching circuit (matching network) 41 is connected between the power amplifier circuit 11 and the transmit filters 311 and 321. Specifically, one end of the matching circuit 41 is connected to the power amplifier circuit 11 via the balun 15, and the other end of the matching circuit 41 is connected to the transmit filters 311 and 321 via the switch circuit 61. The matching circuit 41 may include an inductor and / or a capacitor. The matching circuit 41 can achieve impedance matching between the power amplifier circuit 11 and the transmit filters 311 and 321. Note that the matching circuit 41 does not necessarily have to be included in the high-frequency module 1.

[0091] The matching circuit (matching network) 42 is connected between the power amplifier circuit 12 and the transmit filters 331 and 341. Specifically, one end of the matching circuit 42 is connected to the power amplifier circuit 12 via the balun 16, and the other end of the matching circuit 42 is connected to the transmit filters 331 and 341 via the switch circuit 62. The matching circuit 42 may include an inductor and / or a capacitor. The matching circuit 42 can achieve impedance matching between the power amplifier circuit 12 and the transmit filters 331 and 341. Note that the matching circuit 42 does not necessarily have to be included in the high-frequency module 1.

[0092] The matching circuit (matching network) 43 is connected between the power amplifier circuit 13 and the transmit / receive filters 35 and 36. Specifically, one end of the matching circuit 43 is connected to the power amplifier circuit 13 via the balun 17, and the other end of the matching circuit 43 is connected to the transmit / receive filters 35 and 36 via the switch circuit 63. The matching circuit 43 may include an inductor and / or a capacitor. The matching circuit 43 can achieve impedance matching between the power amplifier circuit 13 and the transmit / receive filters 35 and 36. Note that the matching circuit 43 does not necessarily have to be included in the high-frequency module 1.

[0093] The matching circuit (matching network) 44 is connected between the power amplifier circuit 14 and the transmit / receive filters 37 and 38. Specifically, one end of the matching circuit 44 is connected to the power amplifier circuit 14 via the balun 17, and the other end of the matching circuit 44 is connected to the transmit / receive filters 37 and 38 via the switch circuit 64. The matching circuit 44 may include an inductor and / or a capacitor. The matching circuit 44 can achieve impedance matching between the power amplifier circuit 14 and the transmit / receive filters 37 and 38. Note that the matching circuit 44 does not necessarily have to be included in the high-frequency module 1.

[0094] Switch circuit 51 is an example of a fifth switch circuit and is connected between the antenna connection terminal 101 and the duplexers 31 and 32. Switch circuit 51 includes a common terminal 510 and select terminals 511 and 512. Common terminal 510 is an example of a fifth common terminal and is connected to the antenna connection terminal 101. Select terminal 511 is an example of a ninth select terminal and is connected to the duplexer 31. Select terminal 512 is an example of a tenth select terminal and is connected to the duplexer 32. In this connection configuration, switch circuit 51 can selectively connect the common terminal 510 to select terminals 511 and 512 based on, for example, a digital control signal from RFIC 3. Switch circuit 51 is composed of, for example, an SPDT (Single-Pole Double-Throw) type switch circuit.

[0095] Switch circuit 52 is an example of a sixth switch circuit and is connected between the antenna connection terminal 102 and the duplexers 33 and 34. Switch circuit 52 includes a common terminal 520 and select terminals 521 and 522. Common terminal 520 is an example of a sixth common terminal and is connected to the antenna connection terminal 102. Select terminal 521 is an example of an eleventh select terminal and is connected to the duplexer 33. Select terminal 522 is an example of a twelfth select terminal and is connected to the duplexer 34. In this connection configuration, switch circuit 52 can selectively connect the common terminal 520 to select terminals 521 and 522 based on, for example, a digital control signal from RFIC 3. Switch circuit 52 is composed of, for example, an SPDT type switch circuit.

[0096] The switch circuit 53 is connected between the antenna connection terminal 103 and the transmit / receive filters 35 and 36. The switch circuit 53 includes a common terminal 530 and select terminals 531 and 532. The common terminal 530 is connected to the antenna connection terminal 103. The select terminal 531 is connected to the transmit / receive filter 35. The select terminal 532 is connected to the transmit / receive filter 36. In this connection configuration, the switch circuit 53 can selectively connect the common terminal 530 to the select terminals 531 and 532 based, for example, on a digital control signal from the RFIC 3. The switch circuit 53 is composed of, for example, an SPDT type switch circuit.

[0097] The switch circuit 54 is connected between the antenna connection terminal 104 and the transmit / receive filters 37 and 38. The switch circuit 54 includes a common terminal 540 and select terminals 541 and 542. The common terminal 540 is connected to the antenna connection terminal 104. The select terminal 541 is connected to the transmit / receive filter 37. The select terminal 542 is connected to the transmit / receive filter 38. In this connection configuration, the switch circuit 54 can selectively connect the common terminal 540 to the select terminals 541 and 542, for example, based on a digital control signal from the RFIC 3. The switch circuit 54 is composed of, for example, an SPDT type switch circuit.

[0098] Note that some or all of the switch circuits 51 to 54 do not need to be included in the high-frequency module 1.

[0099] Switch circuit 61 is an example of a first switch circuit and is connected between the power amplifier circuit 11 and the transmit filters 311 and 321. Switch circuit 61 includes a common terminal 610 and select terminals 611 and 612. Common terminal 610 is an example of a first common terminal and is connected to the power amplifier circuit 11 via the matching circuit 41 and the balun 15. Select terminal 611 is an example of a first select terminal and is connected to the transmit filter 311. Select terminal 612 is an example of a second select terminal and is connected to the transmit filter 321. In this connection configuration, switch circuit 61 can selectively connect the common terminal 610 to select terminals 611 and 612 based, for example, on a digital control signal from RFIC 3. Switch circuit 61 is composed of, for example, an SPDT type switch circuit.

[0100] Switch circuit 62 is an example of a second switch circuit and is connected between the power amplifier circuit 12 and the transmit filters 331 and 341. Switch circuit 62 includes a common terminal 620 and select terminals 621 and 622. Common terminal 620 is an example of a second common terminal and is connected to the power amplifier circuit 12 via the matching circuit 42 and the balun 16. Select terminal 621 is an example of a third select terminal and is connected to the transmit filter 331. Select terminal 622 is an example of a fourth select terminal and is connected to the transmit filter 341. In this connection configuration, switch circuit 62 can selectively connect the common terminal 620 to select terminals 621 and 622 based, for example, on a digital control signal from RFIC 3. Switch circuit 62 is composed of, for example, an SPDT type switch circuit.

[0101] Switch circuit 63 is an example of a third switch circuit and is connected between the power amplifier circuit 13 and the low-noise amplifier circuit 25 and the transmit / receive filters 35 and 36. Switch circuit 63 includes common terminals 630 and 633 and select terminals 631 and 632. Common terminal 630 is an example of a third common terminal and is connected to the power amplifier circuit 13. Common terminal 633 is connected to the low-noise amplifier circuit 25. Select terminal 631 is an example of a fifth select terminal and is connected to the transmit / receive filter 35. Select terminal 632 is an example of a sixth select terminal and is connected to the transmit / receive filter 36. In this connection configuration, switch circuit 63 can selectively connect common terminal 630 to select terminals 631 and 632, and can selectively connect common terminal 633 to select terminals 631 and 632, for example, based on a digital control signal from RFIC 3. Conversely, the switch circuit 63 can selectively connect the selection terminal 631 to the common terminals 630 and 633, and can selectively connect the selection terminal 632 to the common terminals 630 and 633. The switch circuit 63 is composed of, for example, a DPDT (Double-Pole Double-Throw) type switch circuit.

[0102] Switch circuit 64 is an example of a fourth switch circuit and is connected between the power amplifier circuit 14 and the low-noise amplifier circuit 26 and the transmit / receive filters 37 and 38. Switch circuit 64 includes common terminals 640 and 643 and select terminals 641 and 642. Common terminal 640 is an example of a fourth common terminal and is connected to the power amplifier circuit 14. Common terminal 643 is connected to the low-noise amplifier circuit 26. Select terminal 641 is an example of a seventh select terminal and is connected to the transmit / receive filter 37. Select terminal 642 is an example of an eighth select terminal and is connected to the transmit / receive filter 38. In this connection configuration, switch circuit 64 can selectively connect common terminal 640 to select terminals 641 and 642, and can selectively connect common terminal 643 to select terminals 641 and 642, for example, based on a digital control signal from RFIC 3. Conversely, the switch circuit 64 can selectively connect the selection terminal 641 to the common terminals 640 and 643, and can selectively connect the selection terminal 642 to the common terminals 640 and 643. The switch circuit 64 is composed of, for example, a DPDT type switch circuit.

[0103] Note that some or all of the switch circuits 63 and 64 do not need to be included in the high-frequency module 1.

[0104] The PA control circuit 70 can control the power amplifier circuits 11 to 14. Specifically, the PA control circuit 70 outputs control signals to the power amplifier circuits 11 to 14 based on, for example, a digital control signal from the RFIC 3. This controls, for example, the bias current supplied to the power amplifier circuits 11 to 14. Note that the PA control circuit 70 does not necessarily have to be included in the high-frequency module 1.

[0105] [1.3. Frequency Bands] Next, the frequency bands according to this embodiment will be described. Bands A to H are frequency bands for communication systems constructed using Radio Access Technology (RAT). Bands A to H are predefined by standardization organizations (for example, 3GPP (registered trademark) (3rd Generation Partnership Project) and IEEE (Institute of Electrical and Electronics Engineers), etc.). Examples of communication systems include 5GNR (5th Generation New Radio) systems, 4GLTE (4th Generation Long Term Evolution) systems, and 2GGSM (2nd Generation Global System for Mobile communications) systems.

[0106] Bands A and B are examples of the first and second bands, respectively, and are distinct FDD bands included in the low band group (LB). The low band group refers to a frequency range that includes multiple frequency bands for 4GLTE and / or 5GNR. The low band group is an example of the first band group and is defined in the frequency range of 617 to 960 MHz. For example, any two of Bands 5, 8, 26, and 28 for 4GLTE, and n5, n8, n26, and n28 for 5GNR can be used as Bands A and B, but are not limited to these.

[0107] Bands C and D are examples of the third and fourth bands, respectively, and are distinct FDD bands included in the Midband Group (MB). The Midband Group refers to a higher frequency range than the Lowband Group, including multiple frequency bands for 4GLTE and / or 5GNR. The Midband Group is an example of the Second Band Group and is defined in the frequency range of 1427 to 2200 MHz. For example, any two of Bands 1, 3, 25, and 66 for 4GLTE, and n1, n3, n25, and n66 for 5GNR can be used as Bands C and D, but are not limited to these. At least one transmit band of Bands C and D may overlap at least partially with the harmonic band of at least one transmit band of Bands A and B.

[0108] Bands E and F are examples of the fifth and sixth bands, respectively, and are distinct TDD bands included in the High Band Group (HB). The High Band Group refers to a frequency range higher than the Mid Band Group, including multiple frequency bands for 4GLTE and / or 5GNR. The High Band Group is an example of the Third Band Group and is defined in the frequency range of 2300–2690 MHz. For example, any two of Bands 40 and 41 for 4GLTE, and n40 and n41 for 5GNR can be used as Bands E and F, but are not limited to these. At least one transmit band of Bands E and F may overlap at least partially with the harmonic band of at least one transmit band of Bands A and B.

[0109] Bands G and H are examples of the 7th and 8th bands, respectively, and are distinct TDD bands included in the Ultra High Bands (UHB). The Ultra High Bands refer to a higher frequency range than the High Bands, including multiple frequency bands for 4GLTE and / or 5GNR. The Ultra High Bands are an example of the 4th Band and are defined in the frequency range of 3300–5000 MHz. For example, any two of n77, n78, and n79 for 5GNR can be used as bands G and H, but are not limited to these. At least one transmit band of bands G and H may at least partially overlap with the harmonic band of at least one transmit band of bands C, D, E, and F.

[0110] In this embodiment, bands A to D are FDD bands and bands E to H are TDD bands, but the embodiment is not limited to these. For example, bands E and / or F may be FDD bands. In this case, the transmit / receive filters 35 and / or 36 may be replaced with duplexers. Furthermore, the first to fourth band groups are not limited to the low band group, mid-band group, high band group, and ultra-high band group. For example, the fourth band group may be a band group included in FR3 (Frequency Range 3) (7.125 GHz to 24.25 GHz) or FR2 (Frequency Range 2) (24.25 GHz to 71 GHz).

[0111] [1.4. Implementation Example of High-Frequency Module 1] Next, an implementation example of the high-frequency module 1 having the circuit configuration described above will be explained with reference to Figures 3 to 6. Figure 3 is a plan view of the high-frequency module 1 according to this embodiment. Figure 4 is a plan view of the high-frequency module 1 according to this embodiment, and is a view from the positive z-axis side through to the main surface 90b side of the module substrate 90. Figure 5 is a partial cross-sectional view of the high-frequency module 1 according to this embodiment. The cross-section of the high-frequency module 1 in Figure 5 is the cross-section along the v-v line in Figures 3 and 4. Figure 6 is a plan view of semiconductor components 60a and 60b according to this embodiment, and is a view from the positive z-axis side through to the lower surface side of semiconductor components 60a and 60bz showing the arrangement of component terminals.

[0112] In Figure 3, to facilitate understanding of the arrangement of each component, the illustration of the resin member covering multiple circuit components and the metal shield covering the resin member are omitted, and each component is labeled. Note that in reality, these labels may not be attached to the individual components. Also, in Figure 3, components hatched with diagonal lines represent optional components not essential to this embodiment.

[0113] Figures 3 to 6 show an example of the implementation of the high-frequency module 1, and the high-frequency module 1 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be interpreted as restrictive.

[0114] In addition to the multiple circuit components shown in Figure 2, the high-frequency module 1 includes a module substrate 90, metal shields 911, 912, 913, and 914, a resin member 92, a metal shield 93, and multiple external connection terminals 96.

[0115] The module substrate 90 has two opposing main surfaces 90a and 90b. The main surfaces 90a and 90b are examples of a first main surface and a second main surface, respectively. Wirings 941, 942, and 943, as well as a ground electrode 95, are formed inside and / or on the module substrate 90.

[0116] As the module substrate 90, for example, a low-temperature co-fired ceramics (LTCC) substrate or a high-temperature co-fired ceramics (HTCC) substrate having a laminated structure of multiple dielectric layers, a component-embedded substrate, a substrate having a redistribution layer (RDL), or a printed circuit board can be used, but is not limited to these.

[0117] Each of the power amplifier circuits 11 (LB PA), 12 (MB PA), 13 (HB PA), and 14 (UHB PA) is mounted as a semiconductor component on the main surface 90a of the module substrate 90. For example, silicon germanium (SiGe) or gallium arsenide (GaAs) can be used as the semiconductor material for the power amplifier circuits 11 to 14. In this case, some or all of the power amplifiers included in the power amplifier circuits 11 to 14 can be composed of heterojunction bipolar transistors (HBTs). Alternatively, gallium nitride (GaN) or silicon carbide (SiC) can be used as the semiconductor material for the power amplifier circuits 11 to 14. In this case, some or all of the power amplifiers included in the power amplifier circuits 11 to 14 can be composed of HEMTs (High Electron Mobility Transistors) or MESFETs (Metal-Semiconductor Field Effect Transistors). Furthermore, silicon single crystal (Si) can be used as the semiconductor material for power amplifier circuits 11 to 14. In this case, some or all of the power amplifiers included in power amplifier circuits 11 to 14 may be composed of CMOS (Complementary Metal Oxide Semiconductor) and may be manufactured by an SOI (Silicon on Insulator) process. Each of the power amplifier circuits 11 to 14 may be divided and mounted on multiple semiconductor components. Also, any combination of power amplifier circuits 11 to 14 may be included in a single semiconductor component.

[0118] Each of the baluns 15 to 18 is formed on the main surface 90a of the module substrate 90 and / or within the module substrate 90 by pattern wiring. Some or all of the baluns 15 to 18 may be mounted as surface mount devices (SMDs).

[0119] The matching circuits 41 to 44 are mounted on the main surface 90a of the module board 90 using chip inductors and / or chip capacitors. Alternatively, the matching circuits 41 to 44 may be mounted using integrated passive devices (IPDs) instead of, or in addition to, chip inductors and / or chip capacitors.

[0120] The semiconductor component 20 is an example of a fifth semiconductor component and is arranged on the main surface 90a of the module substrate 90. The semiconductor component 20 includes low-noise amplification circuits 21 to 26 (LNAs) and a digital control circuit 27 (DCTL).

[0121] The digital control circuit 27 is an example of a fifth digital control circuit and can control the low-noise amplifier circuits 21-26 based on the digital control signal from the RFIC 3. The digital control circuit 27 is positioned closer to the digital control circuit 65b included in the semiconductor component 60b, which will be described later, than to the low-noise amplifier circuits 21-26. In other words, the distance D3 between the digital control circuit 27 and the digital control circuit 65b is shorter than the distance D4 between the low-noise amplifier circuits 21-26 and the digital control circuit 65b. This makes it possible to shorten the wiring (not shown) for the digital control signal connecting the digital control circuit 27 and the digital control circuit 65b. Furthermore, the isolation of the low-noise amplifier circuits 21-26 can be improved.

[0122] As the semiconductor material for the semiconductor component 20, for example, silicon single crystal (Si), gallium nitride (GaN), or silicon carbide (SiC) can be used. In this case, some or all of the multiple amplifying transistors included in the semiconductor component 20 can be composed of field-effect transistors (FETs). Bipolar transistors may be used instead of FETs. Furthermore, the semiconductor component 20 may be divided into multiple semiconductor components.

[0123] Duplexers 31 and 32 (LB DPX), duplexers 33 and 34 (MB DPX), transmit / receive filters 35 and 36 (HB TRX), and transmit / receive filters 37 and 38 (UHB TRX) are arranged on the main surface 90a of the module substrate 90. Surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) filters, LC filters, or dielectric filters, or any combination thereof may be used for the duplexers 31 to 34 and the transmit / receive filters 35 to 38, and are not limited thereto.

[0124] The semiconductor component 50 is an example of a third semiconductor component and is arranged on the main surface 90a of the module substrate 90. The semiconductor component 50 includes switch circuits 51 to 54 (ASW) and a digital control circuit 55 (DCTL).

[0125] The digital control circuit 55 is an example of a third digital control circuit and can control the switch circuits 51-54 based on digital control signals from the RFIC 3. The digital control circuit 55 is positioned closer to the digital control circuit 65b included in the semiconductor component 60b, which will be described later, than to the switch circuits 51-54. In other words, the distance D1 between the digital control circuit 55 and the digital control circuit 65b is shorter than the distance D2 between the switch circuits 51-54 and the digital control circuit 65b. This makes it possible to shorten the wiring (not shown) for the digital control signals connecting the digital control circuit 55 and the digital control circuit 65b. Furthermore, it is possible to improve the isolation of the switch circuits 51-54.

[0126] The semiconductor component 60a is an example of a first semiconductor component and is arranged on the main surface 90a of the module substrate 90. The semiconductor component 60a includes switch circuits 61 (LB BSSW) and 64 (UHB BSSW), a digital control circuit 65a (DCTL), and component terminals 661a, 662a, and 663a.

[0127] The digital control circuit 65a is an example of a first digital control circuit and can control switch circuits 61 and 64 based on digital control signals from RFIC 3.

[0128] The component terminal 661a is an example of a first component terminal and is an external connection terminal of the semiconductor component 60a. The component terminal 661a is connected to the digital control circuit 65a within the semiconductor component 60a, and outside the semiconductor component 60a, the component terminal 661b of the semiconductor component 60b is connected via wiring 941.

[0129] Component terminal 662a is an example of a second component terminal and is an external connection terminal of semiconductor component 60a. Component terminal 662a is connected to the selection terminal 611 of the switch circuit 61 within semiconductor component 60a, and outside semiconductor component 60a, it is connected to the transmit filter 311 of the duplexer 31 via wiring 942.

[0130] Component terminal 663a is an example of a third component terminal and is an external connection terminal for semiconductor component 60a. Component terminal 663a is connected to the ground electrode 95 outside of semiconductor component 60a. As shown in Figure 6, in a plan view of the module substrate 90, component terminal 663a is positioned between component terminals 661a and 662a. Furthermore, component terminal 663a extends in a direction (x direction) that intersects the direction (y direction) connecting component terminals 661a and 662a. This suppresses interference between the digital control signal flowing through component terminal 661a and wiring 941 and the band A transmission signal flowing through component terminal 662a and wiring 942.

[0131] Note that the shape and arrangement of component terminals 661a, 662a, and 663a are not limited to those shown in Figure 6. For example, component terminal 663a does not have to extend in the x direction. Also, component terminal 663a does not have to be positioned between component terminals 661a and 662a.

[0132] The semiconductor component 60b is an example of a second semiconductor component and is arranged on the main surface 90a of the module substrate 90. The semiconductor component 60b includes switch circuits 62 (MB BSSW) and 63 (HB BSSW), a digital control circuit 65b (DCTL), and component terminals 661b, 662b, and 663b.

[0133] The digital control circuit 65b is an example of a second digital control circuit and can control switch circuits 62 and 63 based on digital control signals from RFIC 3.

[0134] The component terminal 661b is an example of a fourth component terminal and is an external connection terminal of the semiconductor component 60b. The component terminal 661b is connected to the digital control circuit 65b within the semiconductor component 60b and is connected to the component terminal 661a of the semiconductor component 60a outside the semiconductor component 60b via wiring 941.

[0135] Component terminal 662b is an example of a fifth component terminal and is an external connection terminal of semiconductor component 60b. Component terminal 662b is connected to the select terminal 621 of the switch circuit 62 within semiconductor component 60b and to the transmit filter 331 of the duplexer 33 via wiring 943 outside of semiconductor component 60b.

[0136] Component terminal 663b is an example of a sixth component terminal and is an external connection terminal for semiconductor component 60b. Component terminal 663b is connected to the ground electrode 95 outside of semiconductor component 60b. As shown in Figure 6, in a plan view of the module substrate 90, component terminal 663b is positioned between component terminals 661b and 662b. Furthermore, component terminal 663b extends in a direction (x direction) that intersects the direction (y direction) connecting component terminals 661b and 662b. This suppresses interference between the digital control signal flowing through component terminal 661b and wiring 941 and the band B transmission signal flowing through component terminal 662b and wiring 943.

[0137] Note that the shape and arrangement of component terminals 661b, 662b, and 663b are not limited to those shown in Figure 6. For example, component terminal 663b does not have to extend in the x direction. Also, component terminal 663b does not have to be positioned between component terminals 661b and 662b.

[0138] For example, silicon single crystal (Si), gallium nitride (GaN), or silicon carbide (SiC) can be used as the semiconductor material for semiconductor components 50, 60a, and 60b.

[0139] As shown in Figure 3, in a plan view of the module board 90, the digital control circuits 65a and 65b are positioned between the switch circuits 61 and 64 and the switch circuits 62 and 63. That is, at least one of the multiple line segments connecting any point in the switch circuits 61 and 64 to any point in the switch circuits 62 and 63 passes through the digital control circuits 65a and 65b. This improves the isolation between the switch circuits 61 and 64 and the switch circuits 62 and 63. Furthermore, the wiring 941 for the digital control signal connecting the digital control circuits 65a and 65b can be shortened, thereby reducing digital noise.

[0140] The PA control circuit 70 (PAC) is positioned on the main surface 90a of the module board 90. The PA control circuit 70 is connected to the digital control terminals 130 included in a plurality of external connection terminals 96 via wiring (not shown) within and / or on the module board 90. Furthermore, the PA control circuit 70 is connected to the semiconductor component 60b via wiring (not shown) within and / or on the module board 90, and supplies digital control signals from the RFIC 3 to the digital control circuit 65b.

[0141] Each of the metal shields 911, 912, 913, and 914 is a metal wall and is erected in the z-direction from the main surface 90a of the module substrate 90. While copper or aluminum can be used as the metal material for the metal shields 911 to 914, the metal material is not limited to these. Furthermore, the shape of the metal shields 911 to 914 is not limited to a plate shape. For example, part or all of the metal shields 911 to 914 may consist of multiple post electrodes.

[0142] The metal shield 911 is connected to ground and is placed on the main surface 90a of the module substrate 90. In a plan view of the module substrate 90, the metal shield 911 is placed between the power amplifier circuits 11 and 14 and the power amplifier circuits 12 and 13. This allows the metal shield 911 to improve the isolation between the power amplifier circuits 11 and 14 and the power amplifier circuits 12 and 13. In particular, since all or part of the harmonic bands of the transmission bandwidths of bands A and B included in the low band group may overlap with the transmission bandwidths of bands C and D included in the mid band group, and the transmission bandwidths of bands E and F included in the high band group, the effect of improving the quality of the transmitted signal by improving the isolation between the power amplifier circuit 11 and the power amplifier circuits 12 and 13 is significant. Furthermore, since all or part of the transmission bandwidths of bands A and B included in the low-band group may overlap with the harmonic bandwidths of the transmission bandwidths of bands C and D included in the mid-band group, and the harmonic bandwidths of the transmission bandwidths of bands E and F included in the high-band group, the effect of improving the quality of the transmitted signal by improving the isolation between power amplifier circuit 14 and power amplifier circuits 12 and 13 is also significant.

[0143] The metal shield 912 is connected to ground and is positioned on the main surface 90a of the module board 90. In a plan view of the module board 90, the metal shield 912 is positioned between the power amplifier circuits 11-14, baluns 15-18, and matching circuits 41-44 and the low-noise amplifier circuits 21-26, duplexers 31-34, transmit / receive filters 35-38, and switch circuits 51-54 and 61-64. As a result, the metal shield 912 can suppress coupling of the matching circuits 41-44 and others to circuit components on the receiving path, thereby improving isolation between the transmitting and receiving paths.

[0144] The metal shield 913 is connected to ground and is positioned on the main surface 90a of the module substrate 90. In a plan view of the module substrate 90, the metal shield 913 is positioned between semiconductor components 60a and 60b, between duplexers 31 and 32 and duplexers 33 and 34, and between duplexers 31 and 32 and transmit / receive filters 35 and 36. As a result, the metal shield 913 can suppress the leakage of harmonics from bands A and B, which are included in the low band group, into the signal paths of bands C to F, which are included in the mid-band group and high band group.

[0145] The metal shield 914 is connected to ground and is positioned on the main surface 90a of the module board 90. In a plan view of the module board 90, the metal shield 914 is positioned between the low-noise amplification circuits 21-26 and the duplexers 31 and 32, as well as the transmit / receive filters 37 and 38. This ensures that the metal shield 914 provides isolation for the low-noise amplification circuits 21-26, thereby improving the noise figure (NF).

[0146] Furthermore, some or all of the metal shields 911 to 914 do not need to be included in the high-frequency module 1.

[0147] The resin member 92 covers at least a portion of the main surface 90a of the module substrate 90 and the components on the main surface 90a. The material of the resin member 92 can be, for example, epoxy resin, but is not limited thereto. The resin member 92 has the function of ensuring the reliability of the components on the main surface 90a, such as mechanical strength and moisture resistance. Note that the resin member 92 does not necessarily have to be included in the high-frequency module 1.

[0148] The metal shield 93 is a thin metal film formed on the surface of the resin member 92, for example, by sputtering. The metal shield 93 is formed to cover at least a portion (the top and side surfaces) of the surface of the resin member 92. The metal shield 93 is connected to metal shields 911 to 914. The metal shield 93 is connected to ground and can suppress external noise from entering the electronic components constituting the high-frequency module 1, and from noise generated in the high-frequency module 1 interfering with other modules or other equipment. Note that the metal shield 93 does not necessarily have to be included in the high-frequency module 1.

[0149] Wiring 941 is an example of first wiring and is formed inside and / or on the module board 90. Wiring 941 connects the digital control circuit 65a to the digital control circuit 65b. The digital control signal supplied from the RFIC 3 to the PA control circuit 70 via the digital control terminal 130 is transmitted to the digital control circuit 65b via wiring (not shown), and further transmitted to the digital control circuit 65a via wiring 941.

[0150] Wiring 942 is an example of a second wiring and is formed inside and / or on the module board 90. Wiring 942 connects the switch circuit 61 to the transmit filter 311 of the duplexer 31. The transmit signal of band A, amplified by the power amplifier circuit 11, is transmitted from the switch circuit 61 to the transmit filter 311 via wiring 942.

[0151] Wiring 943 is an example of a third wiring and is formed inside and / or on the module board 90. Wiring 943 connects the switch circuit 62 to the transmit filter 331 of the duplexer 33. The transmit signal of band B, amplified by the power amplifier circuit 12, is transmitted from the switch circuit 62 to the transmit filter 321 via wiring 943.

[0152] The ground electrode 95 is formed inside and / or on the module substrate 90 and connected to ground. The ground electrode 95 is positioned between the wirings 942 and 943. This allows the ground electrode 95 to improve the isolation between the wirings 942 and 943. However, the ground electrode 95 does not necessarily have to be positioned between the wirings 942 and 943.

[0153] The multiple external connection terminals 96 include antenna connection terminals 101 to 104, high-frequency input terminals 111 to 114, high-frequency output terminals 121 to 126, a digital control terminal 130, and a ground terminal. The multiple external connection terminals 96 are connected to input / output terminals and / or ground terminals, etc., on a mother board (not shown) located outside the high-frequency module 1 in the negative z-axis direction of the high-frequency module 1. In addition, the multiple external connection terminals 96 are connected to components located on the main surface 90a inside the high-frequency module 1 via via conductors formed in the module board 90.

[0154] [1.5. Summary] As described above, the high-frequency module 1 according to this embodiment comprises a module substrate 90 having main surfaces 90a and 90b facing each other, power amplifier circuits 11 and 12 arranged on the module substrate 90, a transmit filter 311 arranged on the module substrate 90 and having a passband that includes the transmit band of band A included in the low band group, a transmit filter 321 arranged on the module substrate 90 and having a passband that includes the transmit band of band B included in the low band group, a transmit filter 331 arranged on the module substrate 90 and having a passband that includes the transmit band of band C included in the mid-band group which is higher than the low band group, a transmit filter 341 arranged on the module substrate 90 and having a passband that includes the transmit band of band D included in the mid-band group, a semiconductor component 60a arranged on one of the main surfaces 90a and 90b of the module substrate 90, and The module substrate 90 includes a semiconductor component 60b disposed on one of the main surfaces 90a and 90b of the Joule substrate 90. The semiconductor component 60a includes a switch circuit 61 which includes a common terminal 610 connected to the output terminal of the power amplifier circuit 11, a select terminal 611 connected to the transmit filter 311, and a select terminal 612 connected to the transmit filter 321, and a digital control circuit 65a configured to control the switch circuit 61. The semiconductor component 60b includes a switch circuit 62 which includes a common terminal 620 connected to the output terminal of the power amplifier circuit 12, a select terminal 621 connected to the transmit filter 331, and a select terminal 622 connected to the transmit filter 341, and a digital control circuit 65b configured to control the switch circuit 62. The digital control circuits 65a and 65b are disposed between the switch circuit 61 and the switch circuit 62 in a plan view of the module substrate 90.

[0155] According to this, the switch circuit 61 for the frequency bands included in the low band group (bands A and B) and the switch circuit 62 for the frequency bands included in the mid-band group (bands C and D) are contained in separate semiconductor components 60a and 60b. Furthermore, digital control circuits 65a and 65b are arranged between the switch circuits 61 and 62. Therefore, the switch circuit 62 is located relatively far from the switch circuit 61, and the digital control circuit 65a is located relatively close to the digital control circuit 65b. This improves the isolation between the switch circuits 61 and 62. In addition, the wiring for transmitting digital control signals between the digital control circuits 65a and 65b can be shortened, reducing digital noise. As a result, the degradation of the transmitted signal quality can be suppressed in the high-frequency module 1 corresponding to the low band group and the mid-band group.

[0156] Furthermore, for example, in the high-frequency module 1 according to this embodiment, the harmonic band of at least one transmission band of bands A and B may overlap at least partially with at least one transmission band of bands C and D.

[0157] According to this, improving the isolation between switch circuits 61 and 62 has a significant effect in suppressing the degradation of the quality of the transmitted signals in bands C and / or D.

[0158] For example, the high-frequency module 1 according to this embodiment may further include a metal shield 913 disposed between semiconductor components 60a and 60b in a plan view of the module substrate 90.

[0159] According to this, the metal shield 913 can further improve the isolation between the switch circuits 61 and 62, and in the high-frequency module 1 corresponding to the low-band and mid-band groups, the degradation of the transmitted signal quality can be further suppressed.

[0160] For example, in the high-frequency module 1 according to this embodiment, the metal shield 913 may be a metal wall disposed on one of the main surfaces 90a and 90b of the module substrate 90.

[0161] According to this, the metal wall can improve the isolation between the switch circuits 61 and 62, and in the high-frequency module 1 corresponding to the low-band and mid-band groups, the degradation of the transmitted signal quality can be suppressed.

[0162] Furthermore, for example, in the high-frequency module 1 according to this embodiment, the semiconductor component 60a may further include component terminals 661a, 662a, and 663a, the semiconductor component 60b may further include component terminals 661b, 662b, and 663b, component terminal 661a may be connected to the digital control circuit 65a within the semiconductor component 60a and to component terminal 661b outside the semiconductor component 60a via wiring 941, component terminal 662a may be connected to the selection terminal 611 of the switch circuit 61 within the semiconductor component 60a and to the transmit filter 311 outside the semiconductor component 60a via wiring 942, component terminal 663a may be connected to the ground electrode 95 outside the semiconductor component 60a, and component terminal 661b may be connected to the digital control circuit 65b within the semiconductor component 60b The component terminals 661a may be connected to component terminal 661a via wiring 941 outside semiconductor component 60b, component terminal 662b may be connected to select terminal 621 of switch circuit 62 inside semiconductor component 60b, and component terminal 663b may be connected to transmit filter 331 via wiring 943 outside semiconductor component 60b, component terminal 663b may be connected to ground electrode 95 outside semiconductor component 60b, in a plan view of module substrate 90, component terminal 663a may be positioned between component terminals 661a and 662a, and component terminal 663b may be positioned between component terminals 661b and 662b, component terminal 663a may extend in a direction intersecting the direction connecting component terminals 661a and 662a, and component terminal 663b may extend in a direction intersecting the direction connecting component terminals 661b and 662b.

[0163] According to this, since the component terminal 663a connected to the ground electrode 95 is positioned between the component terminal 661a for the digital control signal and the component terminal 662a for the band A transmission signal, the isolation between component terminals 661a and 662a can be improved, and the degradation of the band A transmission signal quality can be suppressed. In particular, the isolation improvement effect can be enhanced by having component terminal 663a extend in a direction intersecting the direction connecting component terminals 661a and 662a. Similarly, since the component terminal 663b connected to the ground electrode 95 is positioned between the component terminal 661b for the digital control signal and the component terminal 662b for the band B transmission signal, the isolation between component terminals 661b and 662b can be improved, and the degradation of the band A transmission signal quality can be suppressed. In particular, the isolation improvement effect can be enhanced by having component terminal 663b extend in a direction intersecting the direction connecting component terminals 661b and 662b.

[0164] For example, in the high-frequency module 1 according to this embodiment, the ground electrode 95 may be positioned between wirings 941 and 942, and also between wirings 941 and 943.

[0165] According to this, since the ground electrode 95 is placed between the wiring 941 that transmits the digital control signal and the wiring 942 that transmits the band A transmission signal, the isolation between wirings 941 and 942 can be improved, and the degradation of the band A transmission signal can be suppressed. Similarly, since the ground electrode 95 is placed between the wiring 941 that transmits the digital control signal and the wiring 943 that transmits the band B transmission signal, the isolation between wirings 941 and 943 can be improved, and the degradation of the band B transmission signal can be suppressed.

[0166] For example, the high-frequency module 1 according to this embodiment may further include a power amplification circuit 13 disposed on the module board 90, a transmit / receive filter 35 disposed on the module board 90 and having a passband that includes the transmit bandwidth of band E, which is included in the high-band group higher than the mid-band group, and a transmit / receive filter 36 disposed on the module board 90 and having a passband that includes the transmit bandwidth of band F, which is included in the high-band group. The semiconductor component 60b may further include a switch circuit 63 including a common terminal 630 connected to the output terminal of the power amplification circuit 13, a select terminal 631 connected to the transmit / receive filter 35, and a select terminal 632 connected to the transmit / receive filter 36. The digital control circuit 65b may further be configured to control the switch circuit 63. The digital control circuits 65a and 65b may be arranged between the switch circuits 61 and 63 in a plan view of the module board 90.

[0167] According to this, the switch circuit 61 for the frequency bands included in the low band group (bands A and B) and the switch circuit 63 for the frequency bands included in the high band group (bands E and F) are contained in separate semiconductor components 60a and 60b. Furthermore, digital control circuits 65a and 65b are placed between the switch circuits 61 and 63. Therefore, the switch circuit 63 is placed relatively far from the switch circuit 61, and the digital control circuit 65a is placed relatively close to the digital control circuit 65b. This improves the isolation between the switch circuits 61 and 63. Furthermore, the wiring for transmitting digital control signals between the digital control circuits 65a and 65b can be shortened, reducing digital noise. As a result, degradation of the transmitted signal quality can be suppressed in the high-frequency module 1 corresponding to the low band group and the high band group. Note that the frequency bands included in the high band group may overlap with the harmonic bands (especially the second harmonic band) of the frequency bands included in the low band group, so improving the isolation between the switch circuits 61 and 63 is effective in suppressing degradation of the transmitted signal quality.

[0168] Furthermore, for example, in the high-frequency module 1 according to this embodiment, the harmonic band of at least one transmission band of bands A and B may overlap at least partially with at least one transmission band of bands E and F.

[0169] According to this, improving the isolation between switch circuits 61 and 63 has a significant effect in suppressing the degradation of the quality of the transmitted signal in bands E and / or F.

[0170] For example, the high-frequency module 1 according to this embodiment may further include a power amplification circuit 14 disposed on the module substrate 90, a transmit / receive filter 37 disposed on the module substrate 90 and having a passband that includes the transmit bandwidth of band G, which is included in the ultra-high band group, which is higher than the high band group, and a transmit / receive filter 38 disposed on the module substrate 90 and having a passband that includes the transmit bandwidth of band H, which is included in the ultra-high band group. The semiconductor component 60a may further include a switch circuit 64 including a common terminal 640 connected to the output terminal of the power amplification circuit 14, a select terminal 641 connected to the transmit / receive filter 37, and a select terminal 642 connected to the transmit / receive filter 38. The digital control circuit 65b may further be configured to control the switch circuit 64. The digital control circuits 65a and 65b may be disposed between the switch circuits 62 and 63 and the switch circuit 64 in a plan view of the module substrate 90.

[0171] According to this, the switch circuit 64 for the frequency bands included in the ultra-high band group (bands G and H) and the switch circuit 62 for the frequency bands included in the mid-band group (bands C and D) are contained in separate semiconductor components 60a and 60b. Furthermore, digital control circuits 65a and 65b are arranged between the switch circuits 62 and 63 and the switch circuit 64. Therefore, the switch circuit 64 is located relatively far from the switch circuits 62 and 63, and the digital control circuit 65a is located relatively close to the digital control circuit 65b. This improves the isolation between the switch circuits 62 and 63 and the switch circuit 64. In addition, the wiring for transmitting digital control signals between the digital control circuits 65a and 65b can be shortened, and digital noise can be reduced. As a result, the degradation of the transmitted signal quality can be suppressed in the high-frequency module 1 corresponding to the mid-band group, high-band group, and ultra-high band group.

[0172] Furthermore, for example, in the high-frequency module 1 according to this embodiment, the harmonic band of at least one transmission band of bands C, D, E, and F may overlap at least partially with at least one transmission band of bands G and H.

[0173] According to this, improving the isolation between switch circuits 62 and 63 and switch circuit 64 has a significant effect in suppressing the degradation of the quality of the transmitted signal in bands G and / or H.

[0174] For example, the high-frequency module 1 according to this embodiment may further include semiconductor components 50 arranged on the module substrate 90, and the semiconductor components 50 may include a switch circuit 51 including a common terminal 510 connected to the antenna connection terminal 101, a select terminal 511 connected to the transmit filter 311, and a select terminal 512 connected to the transmit filter 321; a switch circuit 52 including a common terminal 520 connected to the antenna connection terminal 102, a select terminal 521 connected to the transmit filter 331, and a select terminal 522 connected to the transmit filter 341; and a digital control circuit 55 configured to control the switch circuits 51 and 52, and the digital control circuit 55 may be arranged closer to the digital control circuit 65b than the switch circuits 51 and 52.

[0175] According to this, the digital control circuit 55 is positioned relatively close to the digital control circuit 65b. Therefore, the wiring for transmitting digital control signals between the digital control circuits 55 and 65b can be shortened, and digital noise can be reduced.

[0176] For example, the high-frequency module 1 according to this embodiment may further include a receiving filter 312 disposed on a module substrate 90 and having a passband that includes the receiving band of band A, and semiconductor components 20 disposed on the module substrate 90, wherein the semiconductor components 20 may include a low-noise amplification circuit 21 connected to the receiving filter 312 and a digital control circuit 27 configured to control the low-noise amplification circuit 21, and the digital control circuit 27 may be disposed closer to the digital control circuit 65b than the low-noise amplification circuit 21.

[0177] According to this, the digital control circuit 27 is positioned relatively close to the digital control circuit 65b. Therefore, the wiring for transmitting digital control signals between the digital control circuits 27 and 65b can be shortened, and digital noise can be reduced.

[0178] For example, the high-frequency module 1 according to this embodiment may further include a plurality of external connection terminals 96 arranged on the main surface 90b, and the power amplification circuits 11 and 12, the transmitting filters 311, 321, 331 and 341, and the semiconductor components 60a and 60b may be arranged on the main surface 90a.

[0179] According to this, circuit components can be mounted only on the main surface 90a of the module board 90, simplifying the mounting process.

[0180] (Modification 1 of Embodiment 1) Next, Modification 1 of Embodiment 1 will be described. In this modification, the structure of the metal shield differs mainly from that of Embodiment 1. Below, this modification will be described with reference to Figure 7, focusing on the differences from Embodiment 1.

[0181] The circuit configuration of the communication device 5 and high-frequency module 1 in this modified example is the same as that of the communication device 5 and high-frequency module 1 in Embodiment 1, so their illustration and description are omitted.

[0182] [1.6. Implementation Example of High-Frequency Module 1] Figure 7 is a plan view of the high-frequency module 1 according to this modified example. Note that Figure 7 shows one example of implementation of the high-frequency module 1, and the high-frequency module 1 can be implemented using any of the many different circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 according to this modified example provided below should not be interpreted restrictively.

[0183] The high-frequency module 1 according to this modified example further includes a metal shield 913A. Similar to the metal shield 913 in Embodiment 1, the metal shield 913A is positioned between semiconductor components 60a and 60b in a plan view of the module substrate 90. However, the metal shield 913A is not a metal wall, but rather a plurality of bonding wires extending from the main surface 90a of the module substrate 90 to the metal shield 93. As a result, the metal shield 913A can suppress leakage of harmonics of bands A and B included in the low-band group into the signal paths of bands C to F included in the mid-band group and high-band group.

[0184] [1.7. Summary] As described above, in the high-frequency module 1 according to this modified example, the metal shield 913A may be a plurality of bonding wires extending from one of the main surfaces 90a and 90b of the module substrate 90.

[0185] According to this, the isolation between switch circuits 61 and 62 can be improved by using multiple bonding wires, and the degradation of the transmitted signal quality can be suppressed in the high-frequency module 1 corresponding to the low-band and mid-band groups.

[0186] (Modification 2 of Embodiment 1) Next, Modification 2 of Embodiment 1 will be described. In this modification, the structure of the metal shield differs mainly from that of Embodiment 1. Below, this modification will be described with reference to Figure 8, focusing on the differences from Embodiment 1.

[0187] The circuit configuration of the communication device 5 and high-frequency module 1 in this modified example is the same as that of the communication device 5 and high-frequency module 1 in Embodiment 1, so their illustration and description are omitted.

[0188] [1.8. Implementation Example of High-Frequency Module 1] Figure 8 is a partial cross-sectional view of the high-frequency module 1 according to this modified example. Note that Figure 8 shows one example of implementation of the high-frequency module 1, and the high-frequency module 1 can be implemented using any of the many different circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 according to this modified example provided below should not be interpreted as restrictive.

[0189] The high-frequency module 1 according to this modified example further includes a metal shield 913B. The metal shield 913B is a metal film formed on the mutually facing sides of the semiconductor components 60a and 60b. As a result, the metal shield 913B can suppress the leakage of harmonics of bands A and B included in the low-band group into the signal paths of bands C to F included in the mid-band group and high-band group.

[0190] [1.9. Summary] As described above, in the high-frequency module 1 according to this modified example, the metal shield 913B may be a metal film formed on at least one side surface of the semiconductor components 60a and 60b.

[0191] According to this, the isolation between the switch circuits 61 and 62 can be improved by shielding at least one side of the semiconductor components 60a and 60b, and the degradation of the transmitted signal quality can be suppressed in the high-frequency module 1 corresponding to the low-band and mid-band groups.

[0192] (Modification 3 of Embodiment 1) Next, Modification 3 of Embodiment 1 will be described. In this modification, the switch circuits 51 to 54 are mounted on two separate semiconductor components, which is the main difference from Embodiment 1. Below, this modification will be described with reference to Figure 9, focusing on the differences from Embodiment 1.

[0193] The circuit configuration of the communication device 5 and high-frequency module 1 in this modified example is the same as that of the communication device 5 and high-frequency module 1 in Embodiment 1, so their illustration and description are omitted.

[0194] [1.10. Implementation Example of High-Frequency Module 1] Figure 9 is a plan view of semiconductor components 50a and 50b according to this modified example. Note that Figure 9 shows one example of implementation of the high-frequency module 1, and the high-frequency module 1 can be implemented using any of the many different circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 according to this modified example provided below should not be interpreted restrictively.

[0195] The high-frequency module 1 according to this modified example includes semiconductor components 50a and 50b instead of semiconductor component 50.

[0196] The semiconductor component 50a includes switch circuits 51 (LB ASW) and 54 (UHB ASW) and a digital control circuit 55a. The digital control circuit 55a is an example of a third digital control circuit and can control the switch circuits 51 and 54 based on digital control signals from the RFIC 3.

[0197] The semiconductor component 50b includes switch circuits 52 (MB ASW) and 53 (HB ASW) and a digital control circuit 55b. The digital control circuit 55b is an example of a fourth digital control circuit and can control the switch circuits 52 and 53 based on digital control signals from the RFIC 3.

[0198] The digital control circuits 55a and 55b are positioned between the switch circuits 51 and 52 in a plan view of the module board 90. Furthermore, the digital control circuits 55a and 55b are positioned between the switch circuit 53 and the switch circuit 54 in a plan view of the module board 90.

[0199] [1.11. Summary] As described above, the high-frequency module 1 according to this modified example may further include semiconductor components 50a and 50b arranged on the module substrate 90. Semiconductor component 50a may include a switch circuit 51 including a common terminal 510 connected to the antenna connection terminal 101, a select terminal 511 connected to the transmit filter 311, and a select terminal 512 connected to the transmit filter 321, and a digital control circuit 55a configured to control the switch circuit 51. Semiconductor component 50b may include a switch circuit 52 including a common terminal 520 connected to the antenna connection terminal 102, a select terminal 521 connected to the transmit filter 331, and a select terminal 522 connected to the transmit filter 341, and a digital control circuit 55b configured to control the switch circuit 52. The digital control circuits 55a and 55b may be arranged between the switch circuits 51 and 52 in a plan view of the module substrate 90.

[0200] According to this, the switch circuit 51 for the frequency bands included in the low band group (bands A and B) and the switch circuit 52 for the frequency bands included in the mid-band group (bands C and D) are included in separate semiconductor components 50a and 50b. Furthermore, digital control circuits 55a and 55b are arranged between the switch circuit 51 and the switch circuit 52. Therefore, the switch circuit 52 is arranged relatively far away from the switch circuit 51. As a result, the isolation between the switch circuits 51 and 52 can be improved, and the degradation of the transmitted signal quality can be suppressed in the high-frequency module 1 corresponding to the low band group and the mid-band group. Note that the frequency bands included in the mid-band group may overlap with the harmonic bands (especially the second harmonic band) of the frequency bands included in the low band group, so improving the isolation between the switch circuits 51 and 52 is effective in suppressing the degradation of the transmitted signal quality.

[0201] (Modification 4 of Embodiment 1) Next, Modification 4 of Embodiment 1 will be described. In this modification, the main difference from Embodiment 1 is that semiconductor components 60a including switch circuits 61 and 64 and semiconductor components 60b including switch circuits 62 and 63 are arranged on the main surface 90b of the module substrate 90. Below, this modification will be described with reference to the drawings, focusing on the differences from Embodiment 1.

[0202] The circuit configuration of the communication device 5 and high-frequency module 1 in this modified example is the same as that of the communication device 5 and high-frequency module 1 in Embodiment 1, so their illustration and description are omitted.

[0203] [1.12. Implementation Example of High-Frequency Module 1] An implementation example of the high-frequency module 1 according to this modified example will be described with reference to Figures 10 and 11. Figure 10 is a plan view of the high-frequency module 1 according to this modified example. Figure 11 is a plan view of the high-frequency module 1 according to this modified example, and is a view from the positive z-axis side towards the main surface 90b side of the module substrate 90.

[0204] In Figures 10 and 11, the illustration of the resin member covering multiple circuit components and the metal shield covering the resin member is omitted so that the arrangement of each component can be easily understood, and each component is labeled to represent it. However, in reality, these labels do not need to be attached to each component. Also, in Figure 10, the components hatched with diagonal lines represent optional components that are not essential to this modification.

[0205] Figures 10 and 11 show an example of the implementation of the high-frequency module 1, and the high-frequency module 1 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be interpreted as restrictive.

[0206] In addition to the multiple circuit components shown in Figure 2, the high-frequency module 1 includes a module substrate 90, metal shields 911, 912, 913, and 914, a resin member 92, a metal shield 93, and multiple external connection terminals 96.

[0207] The semiconductor component 20 is an example of a fifth semiconductor component and is arranged on the main surface 90b of the module substrate 90. The semiconductor component 20 includes low-noise amplification circuits 21-26 (LNAs) and a digital control circuit 27 (DCTL).

[0208] The digital control circuit 27 is positioned closer to the digital control circuit 65b than the low-noise amplification circuits 21-26. In other words, the distance D3 between the digital control circuit 27 and the digital control circuit 65b is shorter than the distance D4 between the low-noise amplification circuits 21-26 and the digital control circuit 65b. This allows for shorter wiring (not shown) for the digital control signals connecting the digital control circuit 27 and the digital control circuit 65b, thereby reducing digital noise. Furthermore, it improves the isolation of the low-noise amplification circuits 21-26.

[0209] The semiconductor component 50 is an example of a third semiconductor component and is arranged on the main surface 90b of the module substrate 90. The semiconductor component 50 includes switch circuits 51 to 54 (ASW) and a digital control circuit 55 (DCTL).

[0210] The digital control circuit 55 is positioned closer to the digital control circuit 65b than the switch circuits 51-54. In other words, the distance D1 between the digital control circuit 55 and the digital control circuit 65b is shorter than the distance D2 between the switch circuits 51-54 and the digital control circuit 65b. This allows for shorter wiring (not shown) for the digital control signals connecting the digital control circuit 55 and the digital control circuit 65b, thereby reducing digital noise. Furthermore, it improves the isolation of the switch circuits 51-54.

[0211] The semiconductor component 60a is an example of a first semiconductor component and is arranged on the main surface 90b of the module substrate 90. The semiconductor component 60a includes switch circuits 61 (LB BSSW) and 64 (UHB BSSW) and a digital control circuit 65a (DCTL).

[0212] The semiconductor component 60b is an example of a second semiconductor component and is arranged on the main surface 90b of the module substrate 90. The semiconductor component 60b includes switch circuits 62 (MB BSSW) and 63 (HB BSSW) and a digital control circuit 65b (DCTL).

[0213] The PA control circuit 70 (PAC) is located on the main surface 90b of the module board 90. The PA control circuit 70 is connected to the digital control terminals 130 included in a plurality of external connection terminals 96 via wiring (not shown) within and / or on the module board 90.

[0214] [1.13. Summary] As described above, the high-frequency module 1 according to this modified example further includes a plurality of external connection terminals 96 arranged on the main surface 90b, the power amplification circuits 11 and 12, and the transmitting filters 311, 321, 331 and 341 are arranged on the main surface 90a, and the semiconductor components 60a and 60b are arranged on the main surface 90b.

[0215] According to this, circuit components can be mounted on the main surfaces 90a and 90b of the module substrate 90, thereby improving the mounting density.

[0216] (Embodiment 2) Next, Embodiment 2 will be described. This embodiment differs from Embodiment 1 in that semiconductor components 60a including switch circuits 61 and 64 and semiconductor components 60b including switch circuits 62 and 63 are arranged on two different main surfaces 90a and 90b of the module substrate 90. This embodiment will be described below with reference to the drawings, focusing on the differences from Embodiment 1.

[0217] The circuit configuration of the communication device 5 according to this embodiment is the same as that of the communication device 5 according to Embodiment 1, except that the high-frequency module 1 is replaced by the high-frequency module 1A, so its illustration and description are omitted. Similarly, the circuit configuration of the high-frequency module 1A according to this embodiment is the same as that of the high-frequency module 1 according to Embodiment 1, so its illustration and description are omitted.

[0218] [2.1. Implementation Example of High-Frequency Module 1A] An implementation example of the high-frequency module 1A according to this embodiment will be described with reference to Figures 12, 13, 14, and 15. Figure 12 is a plan view of the high-frequency module 1A according to this embodiment. Figure 13 is a plan view of the high-frequency module 1A according to this embodiment, and is a view from the positive z-axis side towards the main surface 90b side of the module substrate 90. Figures 14 and 15 are partial cross-sectional views of the high-frequency module 1A according to this embodiment. The cross-section of the high-frequency module 1A in Figure 14 is the cross-section along the xiv-xiv line in Figures 12 and 13, and the cross-section of the high-frequency module 1A in Figure 15 is the cross-section along the xv-xv line in Figures 12 and 13.

[0219] In Figures 12 and 13, the illustration of the resin member covering multiple circuit components and the metal shield covering the resin member is omitted so that the arrangement of each component can be easily understood, and each component is labeled to represent it. However, in reality, these labels do not need to be attached to each component. Also, in Figure 12, the components hatched with diagonal lines represent optional components that are not essential to this embodiment.

[0220] Figures 12 to 15 show an example of the implementation of the high-frequency module 1A, and the high-frequency module 1A can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1A provided below should not be interpreted as restrictive.

[0221] In addition to the multiple circuit components shown in Figure 2, the high-frequency module 1A includes a module substrate 90, metal shields 911, 912, and 913, a resin member 92, a metal shield 93, and multiple external connection terminals 96.

[0222] The module substrate 90 has two main surfaces 90a and 90b that face each other. Wirings 941, 942, 943, and 944, as well as a ground electrode 95, are formed inside and / or on the module substrate 90.

[0223] Each of the power amplifier circuits 11 (LB PA), 12 (MB PA), 13 (HB PA), and 14 (UHB PA) is mounted as a semiconductor component on the main surface 90a of the module substrate 90, similar to the first embodiment.

[0224] Each of the baluns 15 to 18 is formed by pattern wiring on the main surface 90a of the module substrate 90 and / or within the module substrate 90, similar to the first embodiment.

[0225] Matching circuits 41 to 44 are mounted on the main surface 90a of the module board 90 using chip inductors and / or chip capacitors, similar to the first embodiment.

[0226] The semiconductor component 20 is arranged on the main surface 90a of the module substrate 90, similar to the first embodiment. The semiconductor component 20 includes low-noise amplification circuits 21-26 (LNAs) and a digital control circuit 27 (DCTL). The digital control circuit 27 can control the low-noise amplification circuits 21-26 based on digital control signals from the RFIC 3.

[0227] Duplexers 31 and 32 (LB DPX) and transmit / receive filters 37 and 38 (UHB TRX) are arranged on the main surface 90b of the module board 90. Duplexers 33 and 34 (MB DPX) and transmit / receive filters 35 and 36 (HB TRX) are arranged on the main surface 90a of the module board 90.

[0228] The semiconductor component 50a is an example of a third semiconductor component and is arranged on the main surface 90b of the module substrate 90. The semiconductor component 50a includes switch circuits 51 (LB ASW) and 54 (UHB ASW) and a digital control circuit 55a (DCTL). The digital control circuit 55a is an example of a third digital control circuit and can control the switch circuits 51 and 54 based on digital control signals from the RFIC 3.

[0229] The semiconductor component 50b is an example of a fourth semiconductor component and is arranged on the main surface 90a of the module substrate 90. The semiconductor component 50b includes switch circuits 52 (MB ASW) and 53 (HB ASW) and a digital control circuit 55b (DCTL). The digital control circuit 55b is an example of a fourth digital control circuit and can control the switch circuits 52 and 53 based on digital control signals from the RFIC 3.

[0230] In a plan view of the module board 90, the digital control circuit 55a overlaps with the digital control circuit 55b at least partially. This allows the wiring 944 for the digital control signals connecting the digital control circuit 55a and the digital control circuit 55b to be shortened, thereby reducing digital noise. However, the digital control circuit 55a does not necessarily have to overlap with the digital control circuit 55b in a plan view of the module board 90.

[0231] Furthermore, in a plan view of the module board 90, the digital control circuits 55a and 55b are positioned between the switch circuits 51 and 54 and the switch circuits 52 and 53. This improves the isolation between the switch circuits 51 and 54 and the switch circuits 52 and 53. Note that the digital control circuits 55a and 55b do not necessarily have to be positioned between the switch circuits 51 and 54 and the switch circuits 52 and 53 in a plan view of the module board 90.

[0232] The semiconductor component 60a is an example of a first semiconductor component and is arranged on the main surface 90b of the module substrate 90. The semiconductor component 60a includes switch circuits 61 (LB BSSW) and 64 (UHB BSSW) and a digital control circuit 65a (DCTL). The digital control circuit 65a is an example of a first digital control circuit and can control the switch circuits 61 and 64 based on digital control signals from the RFIC 3.

[0233] The semiconductor component 60b is an example of a second semiconductor component and is arranged on the main surface 90a of the module substrate 90. The semiconductor component 60b includes switch circuits 62 (MB BSSW) and 63 (HB BSSW) and a digital control circuit 65b (DCTL). The digital control circuit 65b is an example of a second digital control circuit and can control the switch circuits 62 and 63 based on digital control signals from the RFIC 3.

[0234] In a plan view of the module board 90, the digital control circuit 65a overlaps with the digital control circuit 65b at least partially. This allows the wiring 941 for the digital control signals connecting the digital control circuit 65a and the digital control circuit 65b to be shortened, thereby reducing digital noise. However, the digital control circuit 65a does not necessarily have to overlap with the digital control circuit 65b in a plan view of the module board 90.

[0235] Furthermore, in a plan view of the module board 90, the digital control circuits 65a and 65b are positioned between the switch circuits 61 and 64 and the switch circuits 62 and 63. This improves the isolation between the switch circuits 61 and 64 and the switch circuits 62 and 63. Note that the digital control circuits 65a and 65b do not necessarily have to be positioned between the switch circuits 61 and 64 and the switch circuits 62 and 63 in a plan view of the module board 90.

[0236] The PA control circuit 70 (PAC) is located on the main surface 90b of the module board 90. The PA control circuit 70 is connected to the digital control terminals 130 included in a plurality of external connection terminals 96 via wiring (not shown) within and / or on the module board 90.

[0237] Each of the metal shields 911, 912, and 913 is a metal wall and is erected in the z-direction from the main surface 90a of the module substrate 90.

[0238] The metal shield 911 is connected to ground and is positioned on the main surface 90a of the module substrate 90. In a plan view of the module substrate 90, the metal shield 911 is positioned between the power amplifier circuits 11 and 14 and the power amplifier circuits 12 and 13. This allows the metal shield 911 to improve the isolation between the power amplifier circuits 11 and 14 and the power amplifier circuits 12 and 13.

[0239] The metal shield 912 is connected to ground and is positioned on the main surface 90a of the module board 90. In a plan view of the module board 90, the metal shield 912 is positioned between the power amplifier circuits 11-14, baluns 15-18 and matching circuits 41-44 and the low-noise amplifier circuits 21-26, duplexers 33 and 34, transmit / receive filters 35 and 36, and switch circuits 52 and 53. As a result, the metal shield 912 can suppress coupling of the matching circuits 41-44 and others to circuit components on the receiving path, thereby improving isolation between the transmit and receive paths.

[0240] The metal shield 913 is connected to ground and is positioned on the main surface 90a of the module board 90. In a plan view of the module board 90, the metal shield 913 is positioned between the low-noise amplification circuits 21-26 and the duplexers 33 and 34, as well as the transmit / receive filters 35 and 36. This allows the metal shield 914 to ensure the isolation of the low-noise amplification circuits 21-26 and improve the noise figure (NF).

[0241] The resin member 92 covers at least a portion of the main surfaces 90a and 90b of the module substrate 90 and the components on the main surfaces 90a and 90b. The material of the resin member 92 can be, for example, epoxy resin, but is not limited thereto. The resin member 92 has the function of ensuring the reliability of the components on the main surfaces 90a and 90b, including mechanical strength and moisture resistance.

[0242] The metal shield 93 is a thin metal film formed, for example, by a sputtering method. The metal shield 93 is formed to cover at least a portion (top and side) of the surface of the resin member 92. The metal shield 93 is connected to metal shields 911 to 913. The metal shield 93 is connected to ground and can suppress external noise from entering the electronic components constituting the high-frequency module 1A, and from noise generated in the high-frequency module 1A interfering with other modules or other equipment.

[0243] The wiring 941 is formed inside and / or on the module board 90. The wiring 941 connects the digital control circuit 65a to the digital control circuit 65b. The digital control signal supplied from the RFIC 3 to the PA control circuit 70 via the digital control terminal 130 is transmitted to the digital control circuit 65a via wiring (not shown), and further transmitted to the digital control circuit 65b via wiring 941.

[0244] The wiring 942 is formed inside and / or on the module board 90. The wiring 942 connects the switch circuit 61 to the transmit filter 311 of the duplexer 31. The transmit signal of band A, amplified by the power amplifier circuit 11, is transmitted from the switch circuit 61 to the transmit filter 311 via the wiring 942.

[0245] The wiring 943 is formed inside and / or on the module board 90. The wiring 943 connects the switch circuit 62 to the transmit filter 321 of the duplexer 32. The transmit signal of band B, amplified by the power amplifier circuit 12, is transmitted from the switch circuit 62 to the transmit filter 321 via the wiring 943.

[0246] The wiring 944 is formed inside and / or on the module board 90. The wiring 944 connects the digital control circuit 55a to the digital control circuit 55b. The digital control signal supplied from the RFIC 3 to the PA control circuit 70 via the digital control terminal 130 is transmitted to the digital control circuit 55b via wiring (not shown), and further transmitted to the digital control circuit 55a via wiring 944.

[0247] The ground electrode 95 is formed within and / or on the module substrate 90 and connected to ground. The ground electrode 95 is positioned between the wirings 942 and 943. This allows the ground electrode 95 to improve isolation between the wirings 942 and 943.

[0248] The multiple external connection terminals 96 include antenna connection terminals 101 to 104, high-frequency input terminals 111 to 114, high-frequency output terminals 121 to 126, a digital control terminal 130, and a ground terminal. The multiple external connection terminals 96 are connected to input / output terminals and / or ground terminals, etc., on a mother board (not shown) located in the negative z-axis direction of the high-frequency module 1A, outside the high-frequency module 1A. The multiple external connection terminals 96 are also connected to components located on the main surfaces 90a and 90b of the module board 90 via via conductors and wiring formed inside and on the module board 90, inside the high-frequency module 1A.

[0249] [2.2. Summary] As described above, the high-frequency module 1A according to this embodiment comprises a module substrate 90 having mutually opposing main surfaces 90a and 90b, a power amplifier circuit 11 and a power amplifier circuit 12 disposed on the module substrate 90, a transmit filter 311 disposed on the module substrate 90 and having a passband that includes the transmit band of band A included in the low band group, a transmit filter 321 disposed on the module substrate 90 and having a passband that includes the transmit band of band B included in the low band group, a transmit filter 331 disposed on the module substrate 90 and having a passband that includes the transmit band of band C included in the mid-band group which is higher than the low band group, and a mid-band module disposed on the module substrate 90. The module board 90 comprises a transmit filter 341 having a passband that includes the transmit band of band D included in the band group, a switch circuit 61 including a common terminal 610 connected to the output terminal of the power amplifier circuit 11, a select terminal 611 connected to the transmit filter 311, and a select terminal 612 connected to the transmit filter 321, and semiconductor components 60a arranged on one of the main surfaces 90a and 90b of the module board 90, and a switch circuit 62 including a common terminal 620 connected to the output terminal of the power amplifier circuit 12, a select terminal 621 connected to the transmit filter 331, and a select terminal 622 connected to the transmit filter 341, and semiconductor components 60b arranged on the other main surface 90a and 90b of the module board 90.

[0250] According to this, the switch circuit 61 for the frequency bands included in the low-band group (bands A and B) and the switch circuit 62 for the frequency bands included in the mid-band group (bands C and D) are contained in separate semiconductor components 60a and 60b. Furthermore, the semiconductor components 60a and 60b are arranged on different main surfaces 90a and 90b of the module substrate 90. Therefore, the isolation between the switch circuits 61 and 62 can be improved, and the degradation of the transmitted signal quality can be suppressed in the high-frequency module 1A corresponding to the low-band group and the mid-band group.

[0251] Furthermore, for example, in the high-frequency module 1A according to this embodiment, the harmonic band of at least one transmission band of bands A and B may overlap at least partially with at least one transmission band of bands C and D.

[0252] According to this, improving the isolation between switch circuits 61 and 62 has a significant effect in suppressing the degradation of the quality of the transmitted signals in bands C and / or D.

[0253] For example, in the high-frequency module 1A according to this embodiment, the semiconductor component 60a may further include a digital control circuit 65a configured to control the switch circuit 61, and the semiconductor component 60b may further include a digital control circuit 65b configured to control the switch circuit 62, and the digital control circuit 65a may at least partially overlap the digital control circuit 65b in a plan view of the module substrate 90.

[0254] According to this, the digital control circuit 65a is positioned relatively close to the digital control circuit 65b. Therefore, the wiring for transmitting digital control signals between the digital control circuits 65a and 65b can be shortened, and digital noise can be reduced.

[0255] For example, in the high-frequency module 1A according to this embodiment, the digital control circuits 65a and 65b may be arranged between the switch circuits 61 and 62 in a plan view of the module board 90.

[0256] According to this, the switch circuit 62 is positioned relatively far from the switch circuit 61, thereby improving the isolation between the switch circuits 61 and 62. Furthermore, since the digital control circuit 65a is positioned relatively close to the digital control circuit 65b, the wiring for transmitting digital control signals between the digital control circuits 65a and 65b can be shortened, thereby reducing digital noise.

[0257] For example, the high-frequency module 1A according to this embodiment may further include a power amplification circuit 13 disposed on the module board 90, a transmit / receive filter 35 disposed on the module board 90 and having a passband that includes the transmit bandwidth of band E, which is included in the high-band group higher than the mid-band group, and a transmit / receive filter 36 disposed on the module board 90 and having a passband that includes the transmit bandwidth of band F, which is included in the high-band group. The semiconductor component 60b may further include a switch circuit 63 that includes a common terminal 630 connected to the output terminal of the power amplification circuit 13, a select terminal 631 connected to the transmit / receive filter 35, and a select terminal 632 connected to the transmit / receive filter 36. The digital control circuit 65b may further be configured to control the switch circuit 63.

[0258] According to this, the switch circuit 61 for the frequency bands included in the low band group (bands A and B) and the switch circuit 63 for the frequency bands included in the high band group (bands E and F) are contained in separate semiconductor components 60a and 60b. Furthermore, the semiconductor components 60a and 60b are arranged on different main surfaces 90a and 90b of the module substrate 90. Therefore, the isolation between the switch circuits 61 and 63 can be improved, and the degradation of the transmitted signal quality can be suppressed in the high-frequency module 1A corresponding to the low band group and the high band group.

[0259] Furthermore, for example, in the high-frequency module 1A according to this embodiment, the harmonic band of at least one transmission band of bands A and B may overlap at least partially with at least one transmission band of bands E and F.

[0260] According to this, improving the isolation between switch circuits 61 and 63 has a significant effect in suppressing the degradation of the quality of the transmitted signal in bands E and / or F.

[0261] For example, the high-frequency module 1A according to this embodiment may further include a power amplification circuit 14 disposed on the module board 90, a transmit / receive filter 37 disposed on the module board 90 and having a passband that includes the transmit bandwidth of band G, which is included in the ultra-high band group, which is higher than the high band group, and a transmit / receive filter 38 disposed on the module board 90 and having a passband that includes the transmit bandwidth of band H, which is included in the ultra-high band group. The semiconductor component 60a may further include a switch circuit 64 including a common terminal 640 connected to the output terminal of the power amplification circuit 14, a select terminal 641 connected to the transmit / receive filter 37, and a select terminal 642 connected to the transmit / receive filter 38. The digital control circuit 65a may further be configured to control the switch circuit 64.

[0262] According to this, the switch circuit 64 for the frequency bands included in the ultra-high band group (bands G and H), and the switch circuits 62 and 63 for the frequency bands included in the mid-band group (bands C and D) and the frequency bands included in the high-band group (bands E and F) are contained in separate semiconductor components 60a and 60b. Furthermore, the semiconductor components 60a and 60b are arranged on different main surfaces 90a and 90b of the module substrate 90. Therefore, the isolation between the switch circuits 62 and 63 and the switch circuit 64 can be improved, and the degradation of the transmitted signal quality can be suppressed in the high-frequency module 1A corresponding to the mid-band group, high-band group, and ultra-high band group.

[0263] Furthermore, for example, in the high-frequency module 1A according to this embodiment, the harmonic band of at least one transmission band of bands C, D, E, and F may overlap at least partially with at least one transmission band of bands G and H.

[0264] According to this, improving the isolation between switch circuits 62 and 63 and switch circuit 64 has a significant effect in suppressing the degradation of the quality of the transmitted signal in bands G and / or H.

[0265] For example, the high-frequency module 1A according to this embodiment may further include a switch circuit 51 which includes a common terminal 510 connected to the antenna connection terminal 101, a select terminal 511 connected to the transmit filter 311, and a select terminal 512 connected to the transmit filter 321, and a semiconductor component 50a arranged on the main surface 90b, and a switch circuit 52 which includes a common terminal 520 connected to the antenna connection terminal 102, a select terminal 521 connected to the transmit filter 331, and a select terminal 522 connected to the transmit filter 341, and a semiconductor component 50b arranged on the main surface 90a.

[0266] According to this, the switch circuit 51 for the frequency bands included in the low band group (bands A and B) and the switch circuit 52 for the frequency bands included in the mid-band group (bands C and D) are included in separate semiconductor components 50a and 50b. Furthermore, the semiconductor components 50a and 50b are arranged on different main surfaces 90a and 90b of the module substrate 90. Therefore, the isolation between the switch circuits 51 and 52 can be improved, and the degradation of the transmitted signal quality can be suppressed in the high-frequency module 1A corresponding to the low band group and the mid-band group. Note that the frequency bands included in the mid-band group may overlap with the harmonic bands (especially the second harmonic band) of the frequency bands included in the low band group, so improving the isolation between the switch circuits 51 and 52 is effective in suppressing the degradation of the transmitted signal quality.

[0267] For example, in the high-frequency module 1A according to this embodiment, the semiconductor component 50a may further include a digital control circuit 55a configured to control the switch circuit 51, and the semiconductor component 50b may further include a digital control circuit 55b configured to control the switch circuit 52, and in a plan view of the module substrate 90, the digital control circuit 55a may at least partially overlap with the digital control circuit 55b.

[0268] According to this, the digital control circuit 55a is positioned relatively close to the digital control circuit 55b. Therefore, the wiring for transmitting digital control signals between the digital control circuits 55a and 55b can be shortened, and digital noise can be reduced.

[0269] For example, in the high-frequency module 1A according to this embodiment, the digital control circuits 55a and 55b may be arranged between the switch circuits 51 and 52 in a plan view of the module board 90.

[0270] According to this, the switch circuit 52 is positioned relatively far from the switch circuit 51, thereby improving the isolation between the switch circuits 51 and 52. Furthermore, since the digital control circuit 55a is positioned relatively close to the digital control circuit 55b, the wiring for transmitting digital control signals between the digital control circuits 55a and 55b can be shortened, thereby reducing digital noise.

[0271] (Other Embodiments) The high-frequency module according to the present invention has been described above based on embodiments, but the high-frequency module according to the present invention is not limited to the above embodiments. Other embodiments realized by combining any of the components in the above embodiments, modified versions obtained by applying various modifications to the above embodiments that a person skilled in the art can conceive of without departing from the spirit of the present invention, and various devices incorporating the above high-frequency module are also included in the present invention.

[0272] For example, in the circuit configuration of the high-frequency module according to each of the above embodiments, other circuit elements and wiring may be inserted between the paths connecting each circuit element and signal path disclosed in the drawings. For example, an impedance matching circuit may be connected between the duplexers 31-34 and the transmit / receive filters 35-38 and the switch circuits 51-54. Also, for example, a coupler may be connected between the switch circuits 51-54 and the antenna connection terminals 101-104.

[0273] Furthermore, for example, in each of the above embodiments, the high-frequency modules 1 and 1A may be provided with a low-pass filter for the 2GGSM. In that case, the low-pass filter for the 2GGSM may be connected between switch circuits 51 and 61 and / or between switch circuits 52 and 62.

[0274] In the embodiments described above, the digital control terminal 130 was connected to the PA control circuit 70, but this is not limited to that. For example, the digital control terminal 130 may be directly connected to the digital control circuits 27, 55, 65a, 65b, or any combination thereof, in addition to or instead of the PA control circuit 70.

[0275] The features of the high-frequency modules described based on the above embodiments are shown below.

[0276] <1> A module substrate having a first main surface and a second main surface facing each other; a first power amplifier circuit and a second power amplifier circuit disposed on the module substrate; a first transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a first band included in a first band group; a second transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a second band included in the first band group; a third transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a third band included in a second band group that is higher than the first band group; a fourth transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a fourth band included in a second band group; a first semiconductor component disposed on one of the first main surface and the second main surface of the module substrate; and a second semiconductor component disposed on one of the first main surface and the second main surface of the module substrate, wherein the first semiconductor component includes a first switch circuit including a first common terminal connected to the output terminal of the first power amplifier circuit, a first select terminal connected to the first transmit filter, and a second select terminal connected to the second transmit filter. A high-frequency module comprising: a first digital control circuit configured to control the first switch circuit, the second semiconductor component comprising: a second switch circuit including a second common terminal connected to the output terminal of the second power amplifier circuit, a third select terminal connected to the third transmit filter, and a fourth select terminal connected to the fourth transmit filter; and a second digital control circuit configured to control the second switch circuit, wherein the first digital control circuit and the second digital control circuit are arranged between the first switch circuit and the second switch circuit in a plan view of the module substrate.

[0277] <2> The high-frequency module according to <1>, wherein the harmonic bandwidth of at least one transmission band of the first band and the second band overlaps at least partially with at least one transmission band of the third band and the fourth band.

[0278] <3> The high-frequency module according to <1> or <2>, further comprising a metal shield disposed between the first semiconductor component and the second semiconductor component in a plan view of the module substrate.

[0279] <4> The first semiconductor component further includes a first component terminal, a second component terminal and a third component terminal; the second semiconductor component further includes a fourth component terminal, a fifth component terminal and a sixth component terminal; the first component terminal is connected to the first digital control circuit within the first semiconductor component and to the fourth component terminal outside the first semiconductor component via a first wire; the second component terminal is connected to the first select terminal of the first switch circuit within the first semiconductor component and to the first transmit filter outside the first semiconductor component via a second wire; the third component terminal is connected to the ground electrode outside the first semiconductor component; the fourth component terminal is connected to the second digital control circuit within the second semiconductor component and to the first component terminal outside the second semiconductor component via a first wire; the fifth component terminal is connected to the third select terminal of the second switch circuit within the second semiconductor component and to the third transmit filter outside the second semiconductor component via a third wire; the sixth component terminal is connected to the ground electrode outside the second semiconductor component. In a plan view of the module substrate, the third component terminal is positioned between the first component terminal and the second component terminal, and the sixth component terminal is positioned between the fourth component terminal and the fifth component terminal, the third component terminal extends in a direction intersecting the direction connecting the first component terminal and the second component terminal, and the sixth component terminal extends in a direction intersecting the direction connecting the fourth component terminal and the fifth component terminal, the high-frequency module according to any one of <1> to <3>.

[0280] <5> The high-frequency module further comprises: a third power amplifier circuit disposed on the module substrate; a fifth transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a fifth band included in the third band group which is higher than the second band group; and a sixth transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a sixth band included in the third band group, wherein the second semiconductor component further includes a third switch circuit including a third common terminal connected to the output terminal of the third power amplifier circuit, a fifth select terminal connected to the fifth transmit filter, and a sixth select terminal connected to the sixth transmit filter, wherein the second digital control circuit is further configured to control the third switch circuit, and the first digital control circuit and the second digital control circuit are disposed between the first switch circuit and the third switch circuit in a plan view of the module substrate, the high-frequency module according to any one of <1> to <4>.

[0281] <6> The high-frequency module according to <5>, wherein the harmonic bandwidth of at least one transmission band of the first band and the second band overlaps at least partially with at least one transmission band of the fifth band and the sixth band.

[0282] <7> The high-frequency module further comprises: a fourth power amplifier circuit disposed on the module substrate; a seventh transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a seventh band included in the fourth band group which is higher than the third band group; and an eighth transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of an eighth band included in the fourth band group, wherein the first semiconductor component further includes a fourth switch circuit including a fourth common terminal connected to the output terminal of the fourth power amplifier circuit, a seventh select terminal connected to the seventh transmit filter, and an eighth select terminal connected to the eighth transmit filter, the second digital control circuit further configured to control the fourth switch circuit, and the first digital control circuit and the second digital control circuit are disposed between the second switch circuit and the fourth switch circuit in a plan view of the module substrate, the high-frequency module according to <5> or <6>.

[0283] <8> The high-frequency module according to <7>, wherein the harmonic bandwidth of at least one transmission band of the third band and the fourth band overlaps at least partially with at least one transmission band of the seventh band and the eighth band.

[0284] <9> The high-frequency module further comprises a third semiconductor component and a fourth semiconductor component disposed on the module substrate, the third semiconductor component includes a fifth switch circuit including a fifth common terminal connected to a first antenna connection terminal, a ninth select terminal connected to a first transmit filter, and a tenth select terminal connected to a second transmit filter, and a third digital control circuit configured to control the fifth switch circuit, the fourth semiconductor component includes a sixth switch circuit including a sixth common terminal connected to a second antenna connection terminal, an eleventh select terminal connected to a third transmit filter, and a twelfth select terminal connected to a fourth transmit filter, and a fourth digital control circuit configured to control the sixth switch circuit, the third digital control circuit and the fourth digital control circuit being disposed between the fifth switch circuit and the sixth switch circuit in a plan view of the module substrate, the high-frequency module according to any one of <1> to <8>.

[0285] <10> A module substrate having a first main surface and a second main surface facing each other; a first power amplifier circuit and a second power amplifier circuit disposed on the module substrate; a first transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a first band included in a first band group; a second transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a second band included in a first band group; a third transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a third band included in a second band group that is higher than the first band group; a fourth transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a fourth band included in a second band group; a first switch circuit including a first common terminal connected to the output terminal of the first power amplifier circuit, a first select terminal connected to the first transmit filter, and a second select terminal connected to the second transmit filter, and a first semiconductor component disposed on one of the first main surface and the second main surface of the module substrate, A high-frequency module comprising a second switch circuit including a second common terminal connected to the output terminal of the second power amplifier circuit, a third select terminal connected to the third transmit filter, and a fourth select terminal connected to the fourth transmit filter, and a second semiconductor component disposed on the other side of the first and second main surfaces of the module board.

[0286] <11> The high-frequency module according to <10>, wherein the harmonic bandwidth of at least one transmission band of the first band and the second band overlaps at least partially with at least one transmission band of the third band and the fourth band.

[0287] <12> The high-frequency module according to <10> or <11>, wherein the first semiconductor component further includes a first digital control circuit configured to control the first switch circuit, and the second semiconductor component further includes a second digital control circuit configured to control the second switch circuit, and in a plan view of the module substrate, the first digital control circuit at least partially overlaps the second digital control circuit.

[0288] <13> The high-frequency module according to <12>, wherein the first digital control circuit and the second digital control circuit are arranged between the first switch circuit and the second switch circuit in a plan view of the module board.

[0289] <14> The high-frequency module further comprises: a third power amplifier circuit disposed on the module board; a fifth transmit filter disposed on the module board and having a passband that includes the transmit bandwidth of a fifth band included in the third band group which is higher than the second band group; and a sixth transmit filter disposed on the module board and having a passband that includes the transmit bandwidth of a sixth band included in the third band group, wherein the second semiconductor component further includes a third switch circuit including a third common terminal connected to the output terminal of the third power amplifier circuit, a fifth select terminal connected to the fifth transmit filter, and a sixth select terminal connected to the sixth transmit filter, and the second digital control circuit is further configured to control the third switch circuit, the high-frequency module according to <12> or <13>.

[0290] <15> The high-frequency module according to <14>, wherein the harmonic bandwidth of at least one transmission band of the first band and the second band overlaps at least partially with at least one transmission band of the fifth band and the sixth band.

[0291] <16> The high-frequency module further comprises: a fourth power amplifier circuit disposed on the module substrate; a seventh transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a seventh band included in the fourth band group which is higher than the third band group; and an eighth transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of an eighth band included in the fourth band group, wherein the first semiconductor component further includes a fourth switch circuit including a fourth common terminal connected to the output terminal of the fourth power amplifier circuit, a seventh select terminal connected to the seventh transmit filter, and an eighth select terminal connected to the eighth transmit filter, and the first digital control circuit is further configured to control the fourth switch circuit, the high-frequency module according to <14> or <15>.

[0292] <17> The high-frequency module according to <16>, wherein the harmonic bandwidth of at least one of the transmission bands of the third band, the fourth band, the fifth band, and the sixth band overlaps at least partially with at least one of the transmission bands of the seventh band and the eighth band.

[0293] <18> The high-frequency module further comprises: a third semiconductor component disposed on the second main surface, which includes a fifth switch circuit including a fifth common terminal connected to a first antenna connection terminal, a ninth select terminal connected to the first transmit filter, and a tenth select terminal connected to the second transmit filter; and a fourth semiconductor component disposed on the first main surface, which includes a sixth switch circuit including a sixth common terminal connected to the second antenna connection terminal, an eleventh select terminal connected to the third transmit filter, and a twelfth select terminal connected to the fourth transmit filter.

[0294] <19> The high-frequency module according to <18>, wherein the third semiconductor component further includes a third digital control circuit configured to control the fifth switch circuit, and the fourth semiconductor component further includes a fourth digital control circuit configured to control the sixth switch circuit, and in a plan view of the module substrate, the third digital control circuit at least partially overlaps the fourth digital control circuit.

[0295] <20> The high-frequency module according to <19>, wherein the third digital control circuit and the fourth digital control circuit are arranged between the fifth switch circuit and the sixth switch circuit in a plan view of the module board.

[0296] This invention can be widely used in communication devices such as mobile phones as a high-frequency module positioned in the front end.

[0297] 1, 1A High-frequency module 2a, 2b, 2c, 2d Antenna 3 RFIC 4 BBIC 5 Communication device 11, 12, 13, 14 Power amplifier circuit 15, 16, 17, 18, B14, B24, B34, B44 Balun 20, 50, 50a, 50b, 60a, 60b Semiconductor component 21, 22, 23, 24, 25, 26 Low-noise amplifier circuit 27, 55, 55a, 55b, 65a, 65b Digital control circuit 31, 32, 33, 34 Duplexer 35, 36, 37, 38 Transceiver filter 41, 42, 43, 44 Matching circuit 51, 52, 53, 54, 61, 62, 63, 64 Switch circuit 70 PA control circuit 90 Module board 90a, 90b Main surface 92 Resin component 93, 911, 912, 913, 913A, 913B, 914 Metal shield 95 Ground electrode 96 External connection terminals 101, 102, 103, 104 Antenna connection terminals 111, 112, 113, 114 High-frequency input terminals 121, 122, 123, 124, 125, 126 High-frequency output terminals 130 Digital control terminals 151, 161, 171, 181, L141, L241, L341, L441 Primary coil 152, 162, 172, 182, L142, L242, L342, L442 Secondary coil 311, 321, 331, 341 Transmitting filter 312, 322, 332, 342 Receiving filters 510, 520, 530, 540, 610, 620, 630, 633, 640, 643 Common terminals 511, 512, 521, 522, 531, 532, 541, 542, 611, 612, 621, 622, 631, 632, 641, 642 Selecting terminals 661a, 661b, 662a, 662b, 663a, 663b Component terminals 941, 942, 943, 944 Wiring A, B, C, D, E, F, G, H Bands D1, D2, D3, D4 Distance T11, T12, T13, T21, T22, T23, T31, T32, T33, T41, T42, T43 Power Amplifiers

Claims

1. A module substrate having a first main surface and a second main surface facing each other; a first power amplifier circuit and a second power amplifier circuit disposed on the module substrate; a first transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a first band included in a first band group; a second transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a second band included in the first band group; a third transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a third band included in a second band group that is higher than the first band group; a fourth transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a fourth band included in a second band group; a first semiconductor component disposed on one of the first main surface and the second main surface of the module substrate; and a second semiconductor component disposed on one of the first main surface and the second main surface of the module substrate, wherein the first semiconductor component includes a first switch circuit including a first common terminal connected to the output terminal of the first power amplifier circuit, a first select terminal connected to the first transmit filter, and a second select terminal connected to the second transmit filter. A high-frequency module comprising: a first digital control circuit configured to control the first switch circuit, the second semiconductor component comprising: a second switch circuit including a second common terminal connected to the output terminal of the second power amplifier circuit, a third select terminal connected to the third transmit filter, and a fourth select terminal connected to the fourth transmit filter; and a second digital control circuit configured to control the second switch circuit, wherein the first digital control circuit and the second digital control circuit are arranged between the first switch circuit and the second switch circuit in a plan view of the module substrate.

2. The high-frequency module according to claim 1, wherein the harmonic bandwidth of at least one transmission band of the first band and the second band at least partially overlaps with at least one transmission band of the third band and the fourth band.

3. The high-frequency module according to claim 1 or 2, further comprising a metal shield disposed between the first semiconductor component and the second semiconductor component in a plan view of the module substrate.

4. The first semiconductor component further includes a first component terminal, a second component terminal and a third component terminal; the second semiconductor component further includes a fourth component terminal, a fifth component terminal and a sixth component terminal; the first component terminal is connected to the first digital control circuit within the first semiconductor component and to the fourth component terminal outside the first semiconductor component via a first wire; the second component terminal is connected to the first select terminal of the first switch circuit within the first semiconductor component and to the first transmit filter outside the first semiconductor component via a second wire; the third component terminal is connected to the ground electrode outside the first semiconductor component; the fourth component terminal is connected to the second digital control circuit within the second semiconductor component and to the first component terminal outside the second semiconductor component via a first wire; the fifth component terminal is connected to the third select terminal of the second switch circuit within the second semiconductor component and to the third transmit filter outside the second semiconductor component via a third wire; the sixth component terminal is connected to the ground electrode outside the second semiconductor component. In a plan view of the module substrate, the third component terminal is positioned between the first component terminal and the second component terminal, and the sixth component terminal is positioned between the fourth component terminal and the fifth component terminal, the third component terminal extends in a direction intersecting the direction connecting the first component terminal and the second component terminal, and the sixth component terminal extends in a direction intersecting the direction connecting the fourth component terminal and the fifth component terminal, the high-frequency module according to any one of claims 1 to 3.

5. The high-frequency module further comprises: a third power amplifier circuit disposed on the module substrate; a fifth transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a fifth band included in the third band group which is higher than the second band group; and a sixth transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a sixth band included in the third band group, wherein the second semiconductor component further includes a third switch circuit including a third common terminal connected to the output terminal of the third power amplifier circuit, a fifth select terminal connected to the fifth transmit filter, and a sixth select terminal connected to the sixth transmit filter, the second digital control circuit further configured to control the third switch circuit, and the first digital control circuit and the second digital control circuit are disposed between the first switch circuit and the third switch circuit in a plan view of the module substrate, the high-frequency module according to any one of claims 1 to 4.

6. The high-frequency module according to claim 5, wherein the harmonic bandwidth of at least one transmission band of the first band and the second band at least partially overlaps with at least one transmission band of the fifth band and the sixth band.

7. The high-frequency module further comprises: a fourth power amplifier circuit disposed on the module substrate; a seventh transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a seventh band included in the fourth band group which is higher than the third band group; and an eighth transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of an eighth band included in the fourth band group, wherein the first semiconductor component further includes a fourth switch circuit including a fourth common terminal connected to the output terminal of the fourth power amplifier circuit, a seventh select terminal connected to the seventh transmit filter, and an eighth select terminal connected to the eighth transmit filter, the second digital control circuit further configured to control the fourth switch circuit, and the first digital control circuit and the second digital control circuit are disposed between the second switch circuit and the third switch circuit and the fourth switch circuit in a plan view of the module substrate, the high-frequency module according to claim 5 or 6.

8. The high-frequency module according to claim 7, wherein the harmonic bandwidth of at least one transmission band of the third band and the fourth band at least partially overlaps with at least one transmission band of the seventh band and the eighth band.

9. The high-frequency module further comprises a third semiconductor component and a fourth semiconductor component disposed on the module substrate, wherein the third semiconductor component includes a fifth switch circuit including a fifth common terminal connected to a first antenna connection terminal, a ninth select terminal connected to a first transmit filter, and a tenth select terminal connected to a second transmit filter, and a third digital control circuit configured to control the fifth switch circuit, and the fourth semiconductor component includes a sixth switch circuit including a sixth common terminal connected to a second antenna connection terminal, an eleventh select terminal connected to a third transmit filter, and a twelfth select terminal connected to a fourth transmit filter, and a fourth digital control circuit configured to control the sixth switch circuit, wherein the third digital control circuit and the fourth digital control circuit are disposed between the fifth switch circuit and the sixth switch circuit in a plan view of the module substrate, the high-frequency module according to any one of claims 1 to 8.

10. A module substrate having a first main surface and a second main surface facing each other; a first power amplifier circuit and a second power amplifier circuit disposed on the module substrate; a first transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a first band included in a first band group; a second transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a second band included in the first band group; a third transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a third band included in a second band group that is higher than the first band group; a fourth transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a fourth band included in a second band group; a first switch circuit including a first common terminal connected to the output terminal of the first power amplifier circuit, a first select terminal connected to the first transmit filter, and a second select terminal connected to the second transmit filter, and a first semiconductor component disposed on one of the first main surface and the second main surface of the module substrate, A high-frequency module comprising a second switch circuit including a second common terminal connected to the output terminal of the second power amplifier circuit, a third select terminal connected to the third transmit filter, and a fourth select terminal connected to the fourth transmit filter, and a second semiconductor component disposed on the other side of the first and second main surfaces of the module board.

11. The high-frequency module according to claim 10, wherein the harmonic bandwidth of at least one transmission band of the first band and the second band at least partially overlaps with at least one transmission band of the third band and the fourth band.

12. The high-frequency module according to claim 10 or 11, wherein the first semiconductor component further includes a first digital control circuit configured to control the first switch circuit, and the second semiconductor component further includes a second digital control circuit configured to control the second switch circuit, and the first digital control circuit at least partially overlaps the second digital control circuit in a plan view of the module substrate.

13. The high-frequency module according to claim 12, wherein the first digital control circuit and the second digital control circuit are arranged between the first switch circuit and the second switch circuit in a plan view of the module substrate.

14. The high-frequency module further comprises: a third power amplifier circuit disposed on the module substrate; a fifth transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a fifth band included in the third band group which is higher than the second band group; and a sixth transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a sixth band included in the third band group, wherein the second semiconductor component further includes a third switch circuit including a third common terminal connected to the output terminal of the third power amplifier circuit, a fifth select terminal connected to the fifth transmit filter, and a sixth select terminal connected to the sixth transmit filter, and the second digital control circuit is further configured to control the third switch circuit, the high-frequency module according to claim 12 or 13.

15. The high-frequency module according to claim 14, wherein the harmonic bandwidth of at least one transmission bandwidth of the first band and the second band at least partially overlaps with at least one transmission bandwidth of the fifth band and the sixth band.

16. The high-frequency module further comprises: a fourth power amplifier circuit disposed on the module substrate; a seventh transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of a seventh band included in the fourth band group which is higher than the third band group; and an eighth transmit filter disposed on the module substrate and having a passband that includes the transmit bandwidth of an eighth band included in the fourth band group, wherein the first semiconductor component further includes a fourth switch circuit including a fourth common terminal connected to the output terminal of the fourth power amplifier circuit, a seventh select terminal connected to the seventh transmit filter, and an eighth select terminal connected to the eighth transmit filter, and the first digital control circuit is further configured to control the fourth switch circuit, the high-frequency module according to claim 14 or 15.

17. The high-frequency module according to claim 16, wherein the harmonic bandwidth of at least one transmission band of the third band, the fourth band, the fifth band, and the sixth band at least partially overlaps with at least one transmission band of the seventh band and the eighth band.

18. The high-frequency module according to any one of claims 10 to 17, further comprising: a third semiconductor component disposed on the second main surface, which includes a fifth switch circuit including a fifth common terminal connected to a first antenna connection terminal, a ninth select terminal connected to the first transmit filter, and a tenth select terminal connected to the second transmit filter; and a fourth semiconductor component disposed on the first main surface, which includes a sixth switch circuit including a sixth common terminal connected to the second antenna connection terminal, an eleventh select terminal connected to the third transmit filter, and a twelfth select terminal connected to the fourth transmit filter.

19. The high-frequency module according to claim 18, wherein the third semiconductor component further includes a third digital control circuit configured to control the fifth switch circuit, and the fourth semiconductor component further includes a fourth digital control circuit configured to control the sixth switch circuit, and in a plan view of the module substrate, the third digital control circuit at least partially overlaps the fourth digital control circuit.

20. The high-frequency module according to claim 19, wherein the third digital control circuit and the fourth digital control circuit are arranged between the fifth switch circuit and the sixth switch circuit in a plan view of the module board.

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