Semiconductor reaction device and use method therefor

Abstract

The present application relates to the technical field of semiconductor processing, and in particular to a semiconductor reaction device and a use method therefor. The semiconductor reaction device comprises a cavity, a stage, a blocking plate, and a plurality of small baffles. The cavity comprises a housing and an inner cavity, a gas inlet in communication with the inner cavity is formed in the housing, and the gas inlet is used for introducing a process gas into the inner cavity; the stage is located inside the inner cavity and faces the gas inlet, and is used for carrying a wafer; the blocking plate is arranged around the edge of the wafer and moves up and down relative to the stage, and the blocking plate moves to adjust the distribution of the process gas at the edge of the wafer, thereby controlling the reaction rate at the edge of the wafer; and the plurality of small baffles are rotatably arranged on the upper surface of the blocking plate, a rotating shaft is arranged between the upper surface of the blocking plate and each small baffle, the small baffles are rotatably connected to the blocking plate by means of the rotating shafts, and the small baffles rotate to finely adjust the distribution of the process gas at the edge of the wafer. The semiconductor reaction device provided in the present application realizes fine regulation and control of the reaction rate at the edge of the wafer.

Description

A semiconductor reaction apparatus and method of use thereof CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority to Chinese application No. 202411295605.8, filed on September 18, 2024. The contents of the aforementioned application are hereby incorporated by reference. TECHNICAL FIELD

[0002] The present application relates to the technical field of semiconductor processing, in particular to a semiconductor reaction apparatus and method of use thereof. BACKGROUND

[0003] With the continuous advancement of semiconductor manufacturing technology to the micro-nanometer and even atomic scale, high consistency of process in each region of the wafer surface is required. In the key process stages of semiconductor manufacturing, such as plasma stripping, plasma etching and plasma thin film deposition, it is particularly crucial to control the process reaction rate of the wafer edge in the reaction chamber of the equipment.

[0004] Traditional semiconductor reaction chamber design usually focuses on the uniformity of overall gas flow, but the control measures for the micro-environment of the wafer edge are limited, mainly relying on static edge rings or edge shields to improve edge effects. These methods have limited adjustment capabilities and are difficult to meet the increasingly sophisticated needs of semiconductor manufacturing. In particular, with the rapid development of semiconductor manufacturing technology, chip feature sizes continue to shrink to the nanometer level, which poses unprecedented challenges to precision control during processing. At such a small scale, even slight inconsistencies in edge reactions can cause significant differences in circuit performance, affecting product yield and reliability.

[0005] Therefore, how to design a semiconductor reaction apparatus capable of fine regulation of the wafer edge reaction rate is a technical problem that needs to be solved urgently. SUMMARY

[0006] The purpose of the embodiments of the present application is to provide a semiconductor reaction apparatus that solves the problem of difficulty in fine regulation of the process reaction rate of the wafer edge region in the traditional reaction chamber.

[0007] To achieve the above object, the first aspect of the present application provides a semiconductor reaction device. The semiconductor reaction device comprises a cavity, a carrier, a blocking plate and a plurality of small blocking plates. The cavity comprises a shell and an inner cavity, the shell is provided with a gas inlet communicating with the inner cavity, the gas inlet is used for introducing process gas into the inner cavity; the carrier is located inside the inner cavity and faces the gas inlet, and is used for carrying a wafer; the blocking plate is arranged around the edge of the wafer and moves up and down relative to the carrier, the movement of the blocking plate adjusts the distribution of the process gas at the edge of the wafer, thereby controlling the reaction rate of the edge of the wafer; the plurality of small blocking plates are rotatably arranged on the upper surface of the blocking plate, and a rotating shaft is arranged between the upper surface of the blocking plate and the small blocking plates, the small blocking plates are rotatably connected to the blocking plate through the rotating shaft, and the rotation of the small blocking plates finely adjusts the distribution of the process gas at the edge of the wafer.

[0008] In addition, the second aspect of the present application also provides a use method of the semiconductor reaction device, which performs a pre-reaction experiment before the main reaction, and determines the optimal height of the blocking plate and the optimal rotation angle of the small blocking plate according to the gas reaction effect on the wafer measured by the experiment.

[0009] The semiconductor reaction device and the use method provided by the embodiments of the present application are provided with the blocking plate moving up and down relative to the carrier and the rotatable small blocking plate arranged on the blocking plate, the height of the blocking plate is adjusted by moving up and down at different heights, and the rotation angle of the small blocking plate is adjusted, so as to dynamically change the gas flow path and distribution around the outer edge region of the wafer, accurately control the reaction rate of the edge of the wafer, ensure the consistency of the reaction of the edge and the center region of the wafer in the reaction cavity, and meet the increasingly fine semiconductor manufacturing requirements.

[0010] Optionally, the rotating shaft is vertically arranged relative to the upper surface of the blocking plate or horizontally arranged relative to the upper surface of the blocking plate.

[0011] Optionally, the blocking plate is vertically embedded and installed on the carrier.

[0012] Optionally, the blocking plate is provided with a support column at the bottom, the support column is vertically and penetrates through the carrier, and drives the blocking plate to move up and down.

[0013] Optionally, the support column is in the shape of a flat cuboid, and the long side thereof faces the wafer.

[0014] Optionally, the blocking plate has a first position, a second position and a third position relative to the wafer, the distance between the upper surface of the blocking plate and the upper surface of the wafer when the blocking plate is in the first position is less than the distance when the blocking plate is in the second position, and the distance when the blocking plate is in the second position is less than the distance when the blocking plate is in the third position.

[0015] Optionally, the semiconductor reaction device further comprises a first motor, a second motor and a device controller, the first motor is connected with the support column to drive the blocking plate to move up and down, the second motor is connected with the rotating shaft to drive the rotation of the small blocking plate, and the device controller is in communication connection with the first motor and the second motor.

[0016] Optionally, the bottom of the shell is provided with an air outlet. BRIEF DESCRIPTION OF DRAWINGS

[0017] One or more embodiments are illustrated by way of example in the figures that form a part of this patent document, these example are not intended to limit the embodiments, elements having the same reference numbers in the figures indicate like elements, unless otherwise specifically noted, the figures in the drawings are not to scale.

[0018] Fig. 1 is a structural schematic view of a semiconductor reaction device according to some embodiments of the present application when the blocking plate is in a first position;

[0019] Fig. 2 is a structural schematic view of a semiconductor reaction device according to some embodiments of the present application when the blocking plate is in a second position;

[0020] Fig. 3 is a structural schematic view of a semiconductor reaction device according to some embodiments of the present application when the blocking plate is in a third position;

[0021] Fig. 4 is a schematic view of a semiconductor reaction device according to some embodiments of the present application when the small blocking plate is connected with the second motor;

[0022] Fig. 5 is a schematic view of a semiconductor reaction device according to some embodiments of the present application when the small blocking plate is vertically installed on the blocking plate;

[0023] BRIEF DESCRIPTION OF DRAWINGS

[0024] 11, cavity; 111, shell; 112, inner cavity; 113, air inlet; 114, air outlet; 12, object table; 13, blocking plate; 14, small blocking plate; 141, rotating shaft; 15, support column; 16, first motor; 17, second motor; 18, wafer. DETAILED DESCRIPTION

[0025] In order to make the purpose, technical scheme and advantages of the embodiments of the present application more clear, the embodiments of the present application will be described in detail below with reference to the drawings. However, those skilled in the art can understand that in the embodiments of the present application, many technical details are proposed in order to make the readers better understand the present application. However, even without these technical details and based on various changes and modifications of the following embodiments, the technical scheme claimed by the present application can be realized. The following embodiments are divided for the convenience of description, and should not constitute any limitation on the specific implementation of the present application, and the embodiments can be combined and quoted with each other without contradiction.

[0026] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of this application; the use of the terms "including," "comprising," "having" and variations thereof herein is meant to encompass the items listed thereafter and equivalents thereof as well as additional items.

[0027] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the technical features indicated. In the description of the embodiments of the present application, the meaning of "a plurality of" is two or more, unless otherwise explicitly specified and limited.

[0028] In the description of the embodiments of the present application, unless otherwise explicitly specified and limited, the technical terms "mounting", "connection", "connection" and the like should be understood in a broad sense, for example, it can be fixed connection, or detachable connection, or integral; it can be mechanical connection, or electrical connection; it can be direct connection, or indirect connection through an intermediate medium, or internal communication of two elements or interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0029] The current semiconductor manufacturing technology is developing rapidly, and higher requirements are put forward for the miniaturization and processing precision of devices. In this context, the processing of the edge region of the wafer becomes a key factor affecting the overall chip performance. Although the traditional reaction chamber design has paid attention to the uniformity of the overall gas flow, it is slightly insufficient in dealing with the special needs of the microenvironment of the wafer edge. The commonly used static edge ring and edge shielding technology can reduce the edge effect to some extent, such as reducing excessive deposition and uneven etching at the edge, but the adjustment flexibility and precision of these fixed structures are poor, which is difficult to adapt to the increasingly fine semiconductor process nodes.

[0030] The inherent limitations of static edge control methods mainly lie in the inability to dynamically adjust according to specific process steps and the inability to accurately match the edge gas management needs under different wafer thicknesses or complex process conditions. This leads to the fact that in the field of advanced semiconductor manufacturing, the inconsistency of edge reaction rate is still a key bottleneck affecting product yield and performance uniformity. With the continuous shrinking of technology nodes, the accuracy requirement of edge effect control is increasingly strict, and there is an urgent need for an advanced edge gas management scheme that can accurately adjust to achieve high uniformity processing of the wafer as a whole and ensure high-quality manufacturing of semiconductor devices.

[0031] In order to realize the accurate regulation of the wafer edge reaction rate, some embodiments of the present application provide a semiconductor reaction device, which establishes a close connection relationship with the blocking plate and the small blocking plate inside the reaction cavity through the motor as the main driving element. The motor receives the accurate instruction signals from the device controller, and adjusts the height position of the blocking plate and the rotation amplitude of the small blocking plate on the blocking plate in real time according to the signals, so as to change the gas flow path and distribution state of the wafer edge region in the reaction cavity, and further refine the regulation of the wafer edge reaction rate. Through such design, the present application realizes the accurate regulation of the wafer edge reaction rate, thereby significantly improving the uniformity of wafer edge processing and product quality in the semiconductor manufacturing process.

[0032] In order to better understand the technical solutions and technical effects of the present application, the specific embodiments of the semiconductor reaction device will be described in detail below in combination with FIG. 1, FIG. 2, FIG. 3, FIG. 4 and FIG. 5.

[0033] The semiconductor reaction device provided by some embodiments of the present application includes a cavity 11, a carrier 12, a blocking plate 13 and a plurality of small blocking plates 14. The cavity includes a shell 111 and an inner cavity 112, and the shell 111 is provided with a gas inlet 113 communicating with the inner cavity 112, which is used for introducing process gas into the inner cavity 112; the carrier 12 is located inside the inner cavity 112 and faces the gas inlet 113, and is used for carrying a wafer 18; the blocking plate 13 is arranged around the edge of the wafer 18 and moves up and down relative to the carrier 12, and the movement of the blocking plate 13 adjusts the distribution of the process gas at the edge of the wafer 18, thereby controlling the reaction rate of the edge of the wafer 18; the plurality of small blocking plates 14 are rotatably arranged on the upper surface of the blocking plate 13, and a rotating shaft 141 is arranged between the upper surface of the blocking plate 13 and the small blocking plate 14, and the small blocking plate 14 is rotatably connected with the blocking plate 13 through the rotating shaft 141, and the rotation of the small blocking plate 14 finely adjusts the distribution of the process gas at the edge of the wafer 18.

[0034] It should be noted that the inner cavity 112 surrounded by the cavity 11 provides a closed and stable working space for the wafer 18 processing, ensuring the isolation and purity of the process. The carrier 12 is located at the middle position of the bottom of the inner cavity 112, which not only provides stable support for the wafer 18, but also provides suitable temperature for the reaction. The configuration of the gas inlet 113 is accurately calibrated, and forms a top-to-bottom corresponding relationship with the carrier 12 below. Such layout arrangement makes use of the characteristics of natural gas flow, promotes the smoothness and uniformity of gas inlet, ensures that fresh reaction gas can reach the surface of the wafer 18 along the appropriate path, and at the same time reduces the gas concentration fluctuation in the local area, creating a balanced and highly controllable gaseous reaction environment for wafer 18 processing.

[0035] In addition, the blocking plate 13 and the small blocking plate 14 are made of high-temperature-resistant and corrosion-resistant materials. The semiconductor processing involves various extreme conditions, including high-temperature processing steps such as annealing, chemical vapor deposition, and etching and cleaning processes using strong corrosive chemicals. Therefore, the high-temperature-resistant and corrosion-resistant materials used by the blocking plate 13 and the small blocking plate 14 ensure that they remain structurally stable and functionally complete under continuous exposure to high temperatures and chemical corrosion environments. Such materials not only withstand and disperse the thermal load during processing to prevent deformation or damage, but also effectively resist chemical erosion, prolong the service life of the components, and reduce maintenance costs and the risk of production interruptions.

[0036] At the same time, the blocking plate 13 is circumferentially closed and arranged outside the wafer 18, and the small blocking plate 14 is circumferentially and uniformly distributed on the upper surface of the blocking plate 13. The blocking plate 13 is circumferentially tightly and continuously surrounded by the wafer 18, forming a closed ring structure, which not only ensures the omnidirectional accurate control of the gas flow to the edge of the wafer 18, but also provides a continuous and uniform interface for adjusting the gas distribution. On this basis, the small blocking plate 14 is uniformly installed on the top surface of the blocking plate 13 in the circumferential direction, and through the coordinated rotation of the small blocking plate 14, further fine adjustment of the direction and rate of gas flow is realized. The number of small blocking plates 14 is greater than or equal to three, and the smaller the size of the small blocking plate 14, the more fine the adjustment.

[0037] The semiconductor reaction device provided by some embodiments of the present application adjusts the reaction rate of the edge of the wafer 18 by adjusting the gas flow direction and distribution through the blocking plate 13 arranged around the edge of the wafer 18, and adjusts the gas flow direction and distribution through the small blocking plate 14 rotatably installed on the upper surface of the blocking plate 13, and cooperates with the lifting plate to realize high-precision control of the gas flow in the reaction chamber.

[0038] In some embodiments of the present application, the rotating shaft 141 is arranged vertically relative to the upper surface of the blocking plate 13 or horizontally relative to the upper surface of the blocking plate 13.

[0039] It should be noted that the rotating shaft 141 is carefully designed in two ways to maximize the flexibility and accuracy of gas flow regulation. One way is to arrange the rotating shaft 141 vertically relative to the upper surface of the blocking plate 13, which ensures that the small blocking plate 14 moves along the vertical axis when rotating, accurately adjusts the angle and magnitude of the gas flow to the surface of the wafer 18. Another way is to arrange the rotating shaft 141 horizontally relative to the upper surface of the blocking plate 13, which allows the small blocking plate 14 to rotate at different angles with the horizontal plane of the wafer 18, achieving more delicate gas distribution regulation.

[0040] Specifically, when the small baffle 14 rotates to the maximum shielding position along the rotation shaft 141, more gas above the blocking plate 13 is affected by the small baffle 14 and rebounds to the edge or sub-edge position of the wafer 18, thereby affecting the reaction rate of the edge of the wafer 18. When the small baffle 14 rotates to the minimum shielding position along the rotation shaft 141, the gas above the blocking plate 13 affected by the small baffle 14 is the least, and the gas rebounded to the edge or sub-edge position of the wafer 18 by the small baffle 14 is also the least, and the influence on the reaction rate of the edge of the wafer 18 is the least. Therefore, the small baffle 14 can rotate back and forth between the maximum shielding position and the minimum shielding position, guide the gas flow, and different rotation angles achieve different effects, thereby achieving fine adjustment of the edge reaction of the wafer 18.

[0041] In some embodiments of the present application, the blocking plate 13 is vertically embedded and installed on the object table 12.

[0042] It should be noted that the thickness of the wafer 18 is very thin, generally hundreds of microns, not more than 1 mm, and the wafer 18 is placed on the object table 12. The blocking plate 13 is embedded into the object table 12, so that the lowest position of the blocking plate 13 can extend into the object table 12, and the blocking plate 13 has more different heights relative to the wafer 18, which is beneficial to adjust the different distribution of the gas at the edge of the wafer 18, thereby increasing the adjustment range of the gas reaction rate at the edge of the wafer 18. The blocking plate 13 can be lower than the upper surface of the wafer 18, at this time the blocking plate 13 is completely embedded in the object table 12, and the rotation of the small baffle 14 can be used to block or guide the gas flow, and the distribution of the gas at the edge of the wafer 18 can be adjusted.

[0043] In actual situations, the blocking plate 13 can be designed to be tiltable or have an adjustable angle function, so as to flexibly change the relative position between the blocking plate 13 and the surface of the wafer 18 according to different process requirements. This design can further refine the control of the gas distribution at the edge of the wafer 18, thereby more finely regulating the reaction rate of different parts of the wafer 18.

[0044] In addition, the upper surface of the blocking plate 13 can be irregular, so that the blocking plate 13 can adapt to the special geometric structure of the wafer 18 surface or the processing requirements of the specific area, such as special protection for the edge of the wafer 18, local area enhanced cooling or gas guiding at a specific position. At the same time, the small baffle 14 is arranged on the irregular surface of the blocking plate 13 according to the specific requirements of the wafer 18 processing, to achieve the functions of auxiliary guiding, local isolation or enhanced gas flow.

[0045] In some embodiments of the present application, the blocking plate 13 is provided with a support column 15, the support column 15 is vertical and penetrates through the object table 12, and drives the blocking plate 13 to move up and down.

[0046] It should be noted that the support column 15 has multiple, vertically integrated into the stage 12 and can be partially exposed, located at the bottom of the blocking plate 13 and connected with the bottom of the blocking plate 13, providing the blocking plate 13 with lifting guidance. The support column 15 is vertically integrated into the internal structure of the stage 12, and is designed to be partially exposed to the platform surface, which not only ensures the stability of the structure, but also does not affect the layout of the wafer 18 processing area. The support column 15 is located at the bottom of the blocking plate 13 and is closely connected therewith, forming a stable connection interface.

[0047] In some embodiments of the present application, the support column 15 is a flat cuboid shape, with the long side facing the wafer 18.

[0048] It should be noted that the support column 15 can be a flat cuboid shape, with the long side facing the wafer 18. In order to avoid the support column 15 affecting the distribution of the gas when adjusting the position of the blocking plate 13 in the case of the support column 15 leaking out of the stage 12. The support column 15 can also be an elongated cylinder, in order to avoid the support column 15 affecting the distribution of the gas, the diameter of the support column 15 should not be too thick. The support column 15 can also be a flattened cylinder, which is approximately the shape of a rugby ball in cross-section. In order to avoid the support column 15 affecting the distribution of the gas, the shorter arc side or the side with a larger arc of the rugby-shaped support column 15 faces the wafer 18.

[0049] In some embodiments of the present application, the blocking plate 13 has a first position, a second position and a third position relative to the wafer 18. The distance between the upper surface of the blocking plate 13 and the upper surface of the wafer 18 when the blocking plate 13 is in the first position is less than the distance when the blocking plate 13 is in the second position, and the distance when the blocking plate 13 is in the second position is less than the distance when the blocking plate 13 is in the third position.

[0050] It should be noted that, as shown in Figure 1, the upper surface of the blocking plate 13 is in the first position (i.e. the lowest position) with the smallest distance from the upper surface of the wafer 18. At this time, the upper surface of the blocking plate 13 is close to but slightly higher than the edge of the wafer 18, which is conducive to guiding the gas in contact with the blocking plate 13 to bounce to the edge of the wafer 18, so that the gas distribution affects the edge of the wafer 18, and promotes the reaction rate of the edge of the wafer 18; the blocking plate 13 continues to move upward; as shown in Figure 2, when the upper surface of the blocking plate 13 reaches the second position (i.e. the middle position), it is conducive to guiding the gas in contact with the blocking plate 13 to bounce to the edge and the next edge of the wafer 18, so that the reaction rate affects the edge and the next edge of the wafer 18; the blocking plate 13 continues to move upward; as shown in Figure 3, when the upper surface of the blocking plate 13 reaches the third position (i.e. the highest position), it is conducive to guiding the gas in contact with the blocking plate 13 to bounce to a position closer to the center of the wafer 18, affecting the reaction rate of a larger range of the wafer 18 surface.

[0051] In some embodiments of the present application, the semiconductor reaction device further comprises a first motor 16, a second motor 17, and a device controller, the first motor 16 is connected with the support column 15 to drive the up-and-down movement of the blocking plate 13, the second motor 17 is connected with the rotating shaft 141 of the small blocking plate 14 to drive the rotation of the small blocking plate 14, and the device controller is in communication connection with the first motor 16 and the second motor 17.

[0052] It should be noted that the first motor 16 is directly connected with the support column 15 to accurately drive the lifting action of the blocking plate 13, thereby ensuring the instant response and accuracy of the height adjustment. At the same time, the second motor 17 is connected with the rotating shaft 141 of the small blocking plate 14 to control the flexible rotation of the small blocking plate 14, so as to realize the fine adjustment of the gas flow path. All these actions are completed under the unified control of the device controller, which not only establishes communication connection with the two motors to monitor and command their operation in real time, but also has intelligent analysis function.

[0053] In some embodiments of the present application, the bottom of the shell 111 is provided with an exhaust port 114.

[0054] It should be noted that the bottom of the cavity 11 is provided with the exhaust port 114, which can form an effective pressure difference with the top gas inlet 113, so as to promote the rapid extraction of the reacted gas and by-products from the bottom. The exhaust port 114 can also be arranged at the side wall of the cavity 11, so that the best extraction position can be flexibly selected according to the specific process requirements and the simulation results of the internal gas flow of the reaction cavity, the gas flow mode is optimized, and the gas can be uniformly and quickly extracted to avoid the accumulation of unnecessary reaction by-products or unreacted gas in the cavity 11.

[0055] A method using any one of the above semiconductor reaction devices, before the main reaction, a pre-reaction experiment is carried out, according to the gas reaction effect on the wafer 18 measured by the experiment, the best height of the blocking plate 13 and the best rotation angle of the small blocking plate 14 are determined.

[0056] It should be noted that different thicknesses of wafers 18 and different gas reaction processes require different heights of blocking plates 13 and different rotation angles of small blocking plates 14 for the best reaction effect. The reaction effect is the reaction rate distribution required by the process, some processes require uniform reaction rate, some processes require faster edge, some processes require slower edge, some processes require faster or slower sub-edge, which needs to be adjusted according to the actual process requirements. Before the main reaction, a pre-reaction experiment is carried out under the same conditions as the main reaction, the height of the blocking plate 13 and the angle of the small blocking plate 14 are determined. After the main reaction starts, the semiconductor processing process is carried out with the height of the blocking plate 13 and the angle of the small blocking plate 14 determined by the experiment, so as to ensure that the reaction efficiency of the wafer 18 and the quality of the product are the best.

[0057] The above merely provides the preferred embodiment of the present application, and is not intended to limit the present application. Although the present application has been described in terms of preferred embodiments, it is not intended to limit the present application. Any modifications, equivalent replacements, and changes made within the spirit and principle of the present application should be construed as falling within the scope of the present application.

Claims

1. A semiconductor reaction apparatus characterized by comprising: The utility model relates to a kind of equipment for the edge of wafer, including: Cavity, including shell and inner cavity, the shell is provided with air inlet with the inner cavity communication, the air inlet is used to pass into process gas in the inner cavity; Substage, located inside the inner cavity and towards the air inlet, for carrying wafer; Barrier plate, be provided around the edge of wafer, and move up and down relative to the substage, the movement of the barrier plate adjusts the distribution of process gas in the edge of wafer, in turn control the reaction rate of the edge of wafer; Multiple small baffle, rotatably provided on the upper surface of the barrier plate, the upper surface of the barrier plate and the small baffle between being provided with rotating shaft, the small baffle is rotatably connected with the barrier plate by the rotating shaft, the rotation of the small baffle finely adjusts the distribution of process gas in the edge of wafer.

2. The semiconductor reaction apparatus according to claim 1, characterized by The rotating shaft is vertically arranged relative to the upper surface of the barrier plate or horizontally arranged relative to the upper surface of the barrier plate.

3. The semiconductor reaction apparatus according to claim 1, wherein The barrier plate is vertically embedded and installed on the substage.

4. The semiconductor reaction apparatus according to claim 3, wherein The barrier plate bottom is provided with support column, the support column is vertically and passes through the substage, and drives the barrier plate to move up and down.

5. The semiconductor reaction apparatus according to claim 4, wherein The support column is flat cuboid shape, wherein the elongated side is opposite to the wafer.

6. The semiconductor reaction apparatus according to claim 4, wherein The barrier plate has first position, second position and third position relative to the wafer, the distance between the upper surface of the barrier plate and the upper surface of the wafer when the barrier plate is in first position is less than the distance when the barrier plate is in second position, the distance when the barrier plate is in second position is less than the distance when the barrier plate is in third position.

7. The semiconductor reaction apparatus according to claim 4, wherein Also including first motor, second motor, equipment controller, the first motor is connected with the support column to drive the barrier plate to move up and down, the second motor is connected with the rotating shaft to drive the rotation of the small baffle, the equipment controller is connected with the first motor, the second motor communication.

8. The semiconductor reaction apparatus according to claim 4, wherein The bottom of the shell is provided with suction port.

9. A method of using a semiconductor reaction apparatus as claimed in any one of claims 1 to 8, characterized by, Before main reaction, do pre-reaction experiment first, according to the gas reaction effect on the wafer measured by experiment, determine the best height of the barrier plate and the best rotation angle of the small baffle.

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