Metal mask, internal electrode member for multilayer ceramic capacitor, and method for manufacturing internal electrode member for multilayer ceramic capacitor

Abstract

In a metal mask (1) for manufacturing an internal electrode of a multilayer ceramic capacitor, a through hole (1a) having a rectangular shape in a plan view is formed in a metal base material. The area of a penetration portion of the through hole in a plan view is 20,000 μm2 or less. The step height h1 in the short side direction of the through hole is 15.6 μm or less. The taper angle θ in the short side direction is 34.9° or more.

Description

Metal mask, internal electrode member for multilayer ceramic capacitor, and method for manufacturing the internal electrode member for multilayer ceramic capacitor.

[0001] The present invention relates to a metal mask, more particularly to a metal mask suitable for forming components of a multilayer ceramic capacitor (MLCC). The invention also refers to an internal electrode component for an MLCC constructed using this metal mask, and a method for manufacturing the same. This application claims priority based on Japanese Patent Application No. 2024-161423 filed in Japan on 18 September 2024, Japanese Patent Application No. 2024-212998 filed in Japan on 6 December 2024, Japanese Patent Application No. 2025-039242 filed in Japan on 12 March 2025, and Japanese Patent Application No. 2025-093149 filed in Japan on 4 June 2025, the contents of which are incorporated herein by reference.

[0002] MLCCs are chip-type capacitors in which sheets of internal electrodes and dielectric material (sometimes called green sheets) are stacked in multiple layers. While MLCCs are becoming smaller, they also need to have sufficient capacitance. To increase capacitance without increasing size, it is necessary to thin the film thickness of the internal electrodes and increase the number of layers. Conventionally, screen printing has been used to form the internal electrodes, but by using a sputtering method, it is expected that the internal electrodes can be formed thinner and the number of layers can be increased compared to conventional methods (for example, Patent Document 1).

[0003] Furthermore, one method for fabricating a metal mask used in sputtering involves wet etching a thin-film metal substrate (see, for example, Patent Document 2). The material launched from the target passes through through holes formed by etching, thereby forming a film at a predetermined location with predetermined dimensions and shape.

[0004] International Publication No. 2005 / 117040, Japanese Patent No. 6168944

[0005] In MLCCs, a capacitor is formed by stacking components consisting of internal electrodes and dielectric sheets. The performance of the capacitor is determined by the area of ​​the overlapping portion of the internal electrodes of the stacked components when viewed from the stacking direction. For this reason, the rectangular shape in plan view is important for the metal thin film used as the internal electrode. This is because if the corners (edges) of the internal electrode, which has a rectangular shape in plan view, are rounded, the overlapping area decreases by the amount of rounding, resulting in losses.

[0006] The inventors have conducted various studies on the shape of through-holes in the metal mask from the viewpoint of improving the rectangularity of the formed metal thin film in a plan view, and have completed the present invention.

[0007] Based on the above circumstances, the present invention aims to provide a metal mask capable of forming a thin metal film with good rectangularity in a plan view, an internal electrode member for a multilayer ceramic capacitor, and a method for manufacturing the internal electrode member for a multilayer ceramic capacitor.

[0008] A first aspect of the present invention is a metal mask for manufacturing internal electrodes of a multilayer ceramic capacitor, wherein a rectangular through-hole is formed in a metal substrate. In this metal mask, the planar area of ​​the through-hole is 20,000 μm². ２ The following conditions apply: the step height in the short-side direction of the through hole is 15.6 μm or less, and the taper angle in the short-side direction is 34.9° or greater.

[0009] A second aspect of the present invention is a method for manufacturing an internal electrode member for a multilayer ceramic capacitor, comprising forming a thin metal film on a dielectric sheet using a metal mask according to the first aspect.

[0010] A third aspect of the present invention is a metal mask for manufacturing internal electrodes of a multilayer ceramic capacitor, wherein a rectangular through-hole is formed in a metal substrate. In this metal mask, the planar area of ​​the through-hole is 20,000 μm². ２ The following conditions apply: the step height in the long-side direction of the through hole is 12.9 μm or less, and the taper angle in the long-side direction is 41.8° or more.

[0011] A fourth aspect of the present invention is a method for manufacturing an internal electrode member for a multilayer ceramic capacitor, comprising forming a thin metal film on a dielectric sheet using a metal mask according to the fourth aspect.

[0012] A fifth aspect of the present invention is a metal mask for manufacturing internal electrodes of a multilayer ceramic capacitor, wherein a rectangular through-hole is formed in a metal substrate, and the planar area of ​​the through-hole is 20,000 μm². ２ The metal mask is as follows: the step height at the corner of the through hole is 16.4 μm or less, and the taper angle at the corner is 34.4° or greater.

[0013] A sixth aspect of the present invention is a metal mask for manufacturing internal electrodes of a multilayer ceramic capacitor, wherein a rectangular through-hole is formed in a metal substrate, and the area of ​​the through-hole in plan view is x (μm²). ２ The metal mask satisfies the relationship SH ≤ 5.9399e^(5E-05x) between the through-hole and the step height SH (μm) at the corner of the through-hole.

[0014] A seventh aspect of the present invention is a metal mask for manufacturing internal electrodes of a multilayer ceramic capacitor, wherein a rectangular through-hole is formed in a metal substrate, and the area of ​​the through-hole in plan view is x (μm²). ２ The metal mask satisfies the relationship SW ≤ 4.8184e^(6E-05x) between the through-hole and the step width SW (μm) at the corner of the through-hole.

[0015] An eighth aspect of the present invention is a metal mask for manufacturing internal electrodes of a multilayer ceramic capacitor, wherein a rectangular through-hole is formed in a metal substrate, and the area of ​​the through-hole in plan view is x (μm²). ２ The metal mask satisfies the relationship TA ≥ -7.407ln(x) + 107.52 between the through hole and the taper angle TA (°) at the corner of the through hole.

[0016] A ninth aspect of the present invention is an internal electrode member for a multilayer ceramic capacitor in which a metal thin film is provided on a dielectric sheet, wherein a schematic shape of the metal thin film in a plan view is a rectangle with rounded corners, and the difference between the area of the metal thin film in the plan view and the area of an ideal rectangle having the same dimensions as the long side and the short side of the rectangle is 4% or less of the area of the ideal rectangle.

[0017] A tenth aspect of the present invention is a method for manufacturing an internal electrode member for a multilayer ceramic capacitor, in which a metal thin film is formed on a dielectric sheet using the metal mask according to any one of the fifth to eighth aspects.

[0018] According to the present invention, it is possible to provide a metal mask capable of forming a metal thin film having good rectangularity in a plan view, an internal electrode member for a multilayer ceramic capacitor, and a method for manufacturing an internal electrode member for a multilayer ceramic capacitor.

[0019] It is a schematic cross-sectional view showing a sputtering apparatus using a metal mask. It is a diagram showing the relationship between the cross-sectional shape of a metal mask through-hole and a film-formed product. It is a table showing the area loss rate of a nickel film according to the study for each step height. It is a table showing the corner R of the nickel film according to the study for each step height. A graph showing the relationship between the taper angle and the loss rate when the planar view area of the through-hole portion of the metal mask is 20,000 μm ２ is shown. A graph showing the relationship between the taper angle and the area loss rate when the planar view area of the through-hole portion is 15,000 μm ２ is shown. A graph showing the relationship between the taper angle and the area loss rate when the planar view area of the through-hole portion is 12,000 μm ２ is shown. A graph showing the relationship between the taper angle and the area loss rate when the planar view area of the through-hole portion is 10,000 μm ２ is shown. A graph showing the relationship between the taper angle and the area loss rate when the planar view area of the through-hole portion is 8,000 μm ２ is shown. A graph showing the relationship between the taper angle and the area loss rate when the planar view area of the through-hole portion is 6,000 μm ２ is shown. A graph showing the relationship between the taper angle and the area loss rate when the planar view area of the through-hole portion is 4,000 μm ２This graph shows the relationship between the taper angle and the area loss rate at that time. The planar area of ​​the penetration point is 3,000 μm². ２ This graph shows the relationship between the taper angle and the area loss rate at that time. This graph shows an example of the relationship between the taper angle in the short-side direction and the planar area of ​​the through-hole at an area loss rate of 4% in the study. This graph shows an example of the relationship between the corner radius and the planar area of ​​the through-hole at an area loss rate of 4% in the study. The planar area of ​​the through-hole of the metal mask is 20,000 μm². ２ This graph shows the relationship between step height and area loss rate at the time of the penetration. The planar area of ​​the penetration site is 15,000 μm². ２ This graph shows the relationship between step height and area loss rate at the time of the penetration. The planar area of ​​the penetration site is 12,000 μm². ２ This graph shows the relationship between step height and area loss rate at the time of the penetration. The planar area of ​​the penetration point is 10,000 μm². ２ This graph shows the relationship between step height and area loss rate at the time of the penetration. The planar area of ​​the penetration site is 8,000 μm². ２ This graph shows the relationship between step height and area loss rate at the time of the penetration. The planar area of ​​the penetration site is 6,000 μm². ２ This graph shows the relationship between step height and area loss rate at the time of the penetration. The planar area of ​​the penetration site is 4,000 μm². ２ This graph shows the relationship between step height and area loss rate at the time of the penetration. The planar area of ​​the penetration site is 3,000 μm². ２ This graph shows the relationship between step height and area loss rate at a given time. It also shows an example of the relationship between the step height in the short-side direction and the planar area of ​​the through-hole in the metal mask when the area loss rate is 4%. ２ This graph shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the penetration point is 15,000 μm². ２ This graph shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the penetration point is 12,000 μm². ２ This graph shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the penetration point is 10,000 μm². ２This graph shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the penetration point is 8,000 μm². ２ This graph shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the penetration point is 6,000 μm². ２ This graph shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the penetration point is 4,000 μm². ２ This graph shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the penetration point is 3,000 μm². ２ This graph shows the relationship between the step width and the area loss rate at that time. This graph shows an example of the relationship between the step width in the short-side direction and the planar area of ​​the through-hole at an area loss rate of 4% in the study. This is a schematic plan view showing an internal electrode member for a multilayer ceramic capacitor according to one embodiment of the present invention. This is a table showing the area loss rate of the nickel film under study for each step height. This is a table showing the corner radius of the nickel film under study for each step height. The planar area of ​​the through-hole of the metal mask is 20,000 μm². ２ This graph shows the relationship between the taper angle and the loss rate at that time. The planar area of ​​the penetration point is 15,000 μm². ２ This graph shows the relationship between the taper angle and the area loss rate at that time. The planar area of ​​the penetration point is 12,000 μm². ２ This graph shows the relationship between the taper angle and the area loss rate at that time. The planar area of ​​the penetration point is 10,000 μm². ２ This graph shows the relationship between the taper angle and the area loss rate at that time. The planar area of ​​the penetration point is 8,000 μm². ２ This graph shows the relationship between the taper angle and the area loss rate at that time. The planar area of ​​the penetration point is 6,000 μm². ２ This graph shows the relationship between the taper angle and the area loss rate at that time. The planar area of ​​the penetration point is 4,000 μm². ２ This graph shows the relationship between the taper angle and the area loss rate at that time. The planar area of ​​the penetration point is 3,000 μm². ２This graph shows the relationship between the taper angle and the area loss rate. It is an example of the relationship between the taper angle in the long-side direction and the planar area of ​​the through-hole when the area loss rate is 4% in the study. The planar area of ​​the through-hole in the metal mask is 20,000 μm². ２ This graph shows the relationship between step height and area loss rate at the time of the penetration. The planar area of ​​the penetration site is 15,000 μm². ２ This graph shows the relationship between step height and area loss rate at the time of the penetration. The planar area of ​​the penetration site is 12,000 μm². ２ This graph shows the relationship between step height and area loss rate at the time of the penetration. The planar area of ​​the penetration point is 10,000 μm². ２ This graph shows the relationship between step height and area loss rate at the time of the penetration. The planar area of ​​the penetration site is 8,000 μm². ２ This graph shows the relationship between step height and area loss rate at the time of the penetration. The planar area of ​​the penetration site is 6,000 μm². ２ This graph shows the relationship between step height and area loss rate at the time of the penetration. The planar area of ​​the penetration site is 4,000 μm². ２ This graph shows the relationship between step height and area loss rate at the time of the penetration. The planar area of ​​the penetration site is 3,000 μm². ２ This graph shows the relationship between step height and area loss rate at a given time. It also shows an example of the relationship between the step height in the long-side direction and the planar area of ​​the through-hole at a 4% area loss rate in the study. The planar area of ​​the through-hole in the metal mask is 20,000 μm². ２ This graph shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the penetration point is 15,000 μm². ２ This graph shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the penetration point is 12,000 μm². ２ This graph shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the penetration point is 10,000 μm². ２ This graph shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the penetration point is 8,000 μm². ２ This graph shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the penetration point is 6,000 μm². ２This graph shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the penetration point is 4,000 μm². ２ This graph shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the penetration point is 3,000 μm². ２ This graph shows the relationship between the step width and the area loss rate at that time. This graph shows an example of the relationship between the step width in the long side direction and the planar area of ​​the through-hole at an area loss rate of 4% in the study. This is a schematic plan view showing an example of a corner portion of a metal mask according to this embodiment. This is a schematic plan view showing an example of a corner portion of a member formed using the metal mask according to this embodiment. This is a table showing the loss rate of the nickel film studied for each step height. This figure shows the relationship between the average loss rate and the variation in loss rate (3σ) at each level. The planar area of ​​the through-hole of the metal mask is 20,000 μm². ２ This figure shows the relationship between step height and area loss rate at the time of the through-hole in the metal mask. The planar area of ​​the through-hole is 15,000 μm². ２ This figure shows the relationship between step height and area loss rate at the time of the through-hole in the metal mask. The planar area of ​​the through-hole is 12,000 μm². ２ This figure shows the relationship between step height and area loss rate at the time of the through-hole in the metal mask. The planar area of ​​the through-hole is 10,000 μm². ２ This figure shows the relationship between step height and area loss rate at the time of the through-hole in the metal mask. The planar area of ​​the through-hole is 8000 μm². ２ This figure shows the relationship between step height and area loss rate at the time of the through-hole in the metal mask. The planar area of ​​the through-hole is 6000 μm². ２ This figure shows the relationship between step height and area loss rate at the time of the through-hole in the metal mask. The planar area of ​​the through-hole is 4000 μm². ２ This figure shows the relationship between step height and area loss rate at the time of the through-hole in the metal mask. The planar area of ​​the through-hole is 3000 μm². ２ This figure shows the relationship between step height and area loss rate at a given time. This figure also shows the relationship between the planar area of ​​the through-hole in the metal mask and the step height when the area loss rate is 4%. The planar area of ​​the through-hole in the metal mask is 20,000 μm². ２This figure shows the relationship between the taper angle and the area loss rate at that time. The planar area of ​​the through-hole of the metal mask is 20,000 μm². ２ This figure shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the through-hole in the metal mask is 15,000 μm². ２ This figure shows the relationship between the taper angle and the area loss rate at that time. The planar area of ​​the through-hole of the metal mask is 15,000 μm². ２ This figure shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the through-hole of the metal mask is 12,000 μm². ２ This figure shows the relationship between the taper angle and the area loss rate at that time. The planar area of ​​the through-hole of the metal mask is 12,000 μm². ２ This figure shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the through-hole in the metal mask is 10,000 μm². ２ This figure shows the relationship between the taper angle and the area loss rate at that time. The planar area of ​​the through-hole of the metal mask is 10,000 μm². ２ This figure shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the through-hole in the metal mask is 8000 μm². ２ This figure shows the relationship between the taper angle and the area loss rate at that time. The planar area of ​​the through-hole of the metal mask is 8000 μm². ２ This figure shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the through-hole of the metal mask is 6000 μm². ２ This figure shows the relationship between the taper angle and the area loss rate at that time. The planar area of ​​the through-hole of the metal mask is 6000 μm². ２ This figure shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the through-hole of the metal mask is 4000 μm². ２ This figure shows the relationship between the taper angle and the area loss rate at that time. The planar area of ​​the through-hole of the metal mask is 4000 μm². ２ This figure shows the relationship between the step width and the area loss rate at that time. The planar area of ​​the through-hole of the metal mask is 3000 μm². ２ This figure shows the relationship between the taper angle and the area loss rate at that time. The planar area of ​​the through-hole of the metal mask is 3000 μm².２ This figure shows the relationship between the step width and the area loss rate at that time. This figure shows the relationship between the planar area of ​​the through-hole of the metal mask and the taper angle when the area loss rate is 4% in the study. This figure shows the relationship between the planar area of ​​the through-hole of the metal mask and the step width when the area loss rate is 4% in the study.

[0020] A first embodiment of the present invention will be described with reference to Figures 1 to 33. Figure 1 is a schematic cross-sectional view of a sputtering apparatus 200 using a metal mask, showing the positional relationship of the metal mask and the like during film formation. The metal mask 1 according to this embodiment is placed on top of the dielectric sheet 100, which serves as a substrate, as schematically shown in Figure 1. In the sputtering process, which is a type of physical vapor phase growth method, the vacuum chamber (not shown) of the sputtering apparatus 200 is evacuated with a vacuum pump to create a vacuum, a small amount of inert gas such as argon is added, and then a voltage of several hundred volts is applied with the vacuum chamber side as the anode and the target side as the cathode. Upon application, the argon, which is an inert gas, discharges and becomes positive ions, which are rapidly attracted to the target T, which is the cathode, and collide with the target T. As a result, the film formation material on the surface of the target T is ejected, and of the material that flies from the target T toward the metal mask 1, only the material that passes through the through-hole 1a is deposited on the dielectric sheet 100 and formed as a thin conductive film 101 (see Figure 2).

[0021] The material constituting the conductive film can be selected as a metal. Examples of metals that can be used include nickel, or nickel alloys primarily composed of nickel, containing aluminum, silver, copper, platinum, etc.

[0022] Figure 2 is an enlarged cross-sectional view showing the relationship between a through-hole 1a in the metal mask 1 and the deposited film. The through-hole 1a is formed by etching the sheet-like metal member constituting the metal mask (hereinafter simply referred to as the "substrate") from both sides in the thickness direction. When the through-hole 1a is formed by wet etching, etching is often performed in two stages. Specifically, first, the first surface 2a of the substrate 2, which is in close contact with the dielectric sheet 100, is etched, and then the second surface 2b, which is on the target T side, is etched to form the through-hole 1a. The first surface 2a and the second surface 2b are located on both sides in the thickness direction of the substrate.

[0023] Etching is isotropic. Therefore, the planar dimensions of the through-holes 1a are larger closer to the first surface 2a and the second surface 2b of the substrate, and smaller as they move away from the surface. Consequently, when two-stage etching is performed on the first surface 2a and the second surface 2b of the substrate when fabricating the metal mask 1, the planar dimensions of the formed through-holes are smallest at the through-hole portion 1b in the middle of the substrate's thickness direction, and the planar shape and dimensions at this portion define the planar shape of the film-forming structure.

[0024] Since etching proceeds isotropically, it is impossible to make the planar shape of the through-hole 1b, when viewed in the direction normal to the sheet-like metal mask 1, a perfect rectangle, but it is possible to form a nearly rectangular through-hole.

[0025] The through-hole 1b, which has the smallest planar dimensions, is formed at the point where etching from the first surface 2a and the second surface 2b collide. Therefore, the position of the through-hole 1b in the thickness direction of the substrate (hereinafter simply referred to as the "thickness direction") changes depending on the extent of etching from each surface. The film deposition material flies radially from the target. Therefore, if the film deposition material enters the through-hole 1a at an angle, as shown by arrow Ta in Figure 2, it may fly beyond the range of the through-hole in the planar view after passing through the through-hole 1b and reach the dielectric sheet 100. This phenomenon is sometimes called the "shadow effect." The probability of this phenomenon occurring increases as the through-hole 1b moves further away from the dielectric sheet 100. In other words, it increases as the step height h1 (details described later), which is the dimension in the thickness direction from the first surface 2a of the substrate to the through-hole 1b, increases. Furthermore, due to the shadow effect, the planar shape of the through-hole 1b does not directly correspond to the planar shape of the deposited film, and the degree of curvature of the four corners of the rectangle is also affected and changes.

[0026] Based on this, the inventors evaluated the relationship between the step height (shown as h1 in Figure 2), which is the distance from the first surface 2a of the metal mask 1 to the through-hole 1b, the taper angle (shown as θ in Figure 2), and the step width (shown as w1 in Figure 2), which is the distance in the planar direction between the periphery of the through-hole 1a on the first surface 2a and the through-hole 1b, and the formed thin film, and investigated the conditions for a metal mask suitable for manufacturing internal electrodes for MLCCs.

[0027] (Preparation of Metal Mask Samples) A ​​50 μm thick SUS430 stainless steel sheet was prepared as the substrate. The substrate was etched on both sides in a two-stage process to create numerous through-holes at a constant pitch. By changing the amount of etching from both sides, a group of through-holes with 11 different combinations of step height, taper angle (hereinafter sometimes referred to as "taper angle"), and step width in the short-side direction of the through-hole was created. The values ​​of step height, taper angle, and step width in the short-side direction were confirmed by cross-sectional measurement using laser confocal scanning with a Keyence VK-X3000 laser microscope. In this embodiment, the description of the short-side direction may be omitted, but in the study, the values ​​for step height, taper angle, and step width of each through-hole are used on both sides in the short-side direction. The through-holes in this embodiment are substantially rectangular holes with a long side and a short side in a plan view seen in the direction normal to the metal mask. The "short side direction" refers to the direction parallel to the short side of the approximate rectangle described above. Furthermore, "approximate rectangle" does not mean a mathematical rectangle with right angles at its four corners, but can be appropriately modified depending on the shape of the metal thin film to be deposited. In the following explanation, "approximate rectangle" may sometimes be simply referred to as "rectangle."

[0028] For each combination of step height, taper angle, and step width, the following eight types of planar area (μm) are available. ２ A through-hole of the following size was formed. Since the general shape of the through-hole in plan view is rectangular in all cases, the dimensions (μm) of the long and short sides are also shown. As a result, there are 11 levels for each plan view area, and a total of 88 levels were examined. 20000 (200 × 100) 15000 (173.2 × 86.6) 12000 (154.9 × 77.5) 10000 (141.4 × 70.7) 8000 (126.5 × 63.2) 6000 (109.5 × 54.8) 4000 (89.4 × 44.7) 3000 (77.5 × 38.7)

[0029] (Film deposition and measurement using a metal mask sample) As the dielectric sheet, a layer with a thickness of 1 μm was formed by coating the surface of a PET sheet with a slurry mainly composed of barium titanate using die coating and drying it. The dielectric sheet was placed in the sputtering apparatus 200 and the metal mask sample was brought into close contact with it, and film deposition was performed on the dielectric sheet under the following conditions: Target material: Nickel Ultimate pressure: 1.0 × 10⁻⁵ Pa or less Film deposition pressure: 0.65 Pa Input voltage (power): 1.0 kW Input gas type: Argon Input gas flow rate: 100 sccm Film thickness: 150 nm (target value)

[0030] Next, the rectangularity of the nickel film at each level was measured. A Keyence VK-X3000 laser microscope was used as the measuring device. A planar view image of the nickel film was acquired, and the contour was extracted using image processing with white light interference. Then, the inscribed circle corresponding to the rounding of the corners was determined, and its radius was defined as the "corner radius." At each level, the corner radii were obtained from four locations on five randomly selected deposited films, and the arithmetic mean of these radii was taken as the corner radius value for that level.

[0031] At each level, the difference between the area of ​​an ideal rectangle (S1) with identical dimensions for both long and short sides and sharp corners, and the area of ​​a rounded rectangle (S2) with rounded corners was calculated. Based on this, the area loss rate of the formed nickel film ((S1 - S2) / S1) was obtained. The area S1 described above is approximately equivalent to the planar area of ​​the through-hole portion 1b of the metal mask. The area S2 described above is an estimated planar area of ​​the nickel film.

[0032] Figure 3 shows the area loss rate for each level for each step height in the short-side direction. Figure 4 shows the corner radius for each level for each step height in the short-side direction. When examining the relationship between the area loss rate value and its variation (3σ), it was found that when the average area loss rate exceeded 4%, the variation also exceeded 4%, which is considered undesirable for achieving high-capacity and miniaturization high-performance features by increasing the number of layers through thinning the internal electrode of the MLCC.

[0033] Note that for some levels that are far from the boundary between good and bad levels, the values ​​are omitted because it is obvious that they are bad.

[0034] In Figure 4, it was thought that the optimal range for the corner radius might differ depending on the area of ​​the nickel film, so the optimal range for each area was investigated. In Figure 5, the planar area of ​​the through-hole portion of the metal mask is 20,000 μm². ２ The results of the study at that time are shown below. When the taper angle at which the area loss rate is 4.0% was calculated from the equation obtained by approximating the plotted data with a curve, it was found to be 34.9°.

[0035] Figure 6 shows that the planar area of ​​the penetration point is 15,000 μm². ２ The results of the study at that time are shown. From the curve approximation equation of the plotted data, the taper angle at which the area loss rate is 4.0% was calculated to be 36.9°. Figure 7 shows the planar area of ​​the penetration point at 12,000 μm². ２ The results of the study at that time are shown. When the taper angle at which the area loss rate is 4.0% was calculated from the equation obtained by approximating the plotted data by a curve, it was found to be 38.8°.

[0036] Figure 8 shows that the planar area of ​​the penetration point is 10,000 μm². ２ The results of the investigation at that time are shown. From the curve approximation equation of the plotted data, the taper angle at which the area loss rate is 4.0% was calculated to be 40.5°. Figure 9 shows the planar area of ​​the penetration point at 8000 μm². ２ The results of the investigation at that time are shown below. When the taper angle at which the area loss rate is 4.0% was calculated from the equation obtained by approximating the plotted data by a curve, it was found to be 40.2°.

[0037] Figure 10 shows that the planar area of ​​the penetration point is 6000 μm². ２ The results of the study at that time are shown. The taper angle at which the area loss rate is 4.0% was calculated from the curve approximation equation of the plotted data, and it was found to be 44.2°. Figure 11 shows the planar area of ​​the penetration point at 4000 μm². ２ The results of the study at that time are shown. The taper angle at which the area loss rate is 4.0% was calculated from the curve approximation equation of the plotted data, and it was found to be 47.1°. Figure 12 shows the planar area of ​​the penetration point at 3000 μm².２ The results of the study at that time are shown. When the taper angle at which the area loss rate is 4.0% was calculated from the curve approximation formula of the plotted data, it was found to be 50.4°. In the eight types of planar viewing areas mentioned above, it was observed that as the planar viewing area decreases, the effect of the decrease in rectangularity in the planar view due to exceeding the area loss rate of 4.0% becomes larger. From this perspective, it can be said that the importance of keeping the taper angle within the above range increases as the planar viewing area decreases.

[0038] The inventors plotted eight points from Figure 5 to Figure 12 where the area loss rate is 4.0% as shown in Figure 13, and calculated the curve passing through all points. They found that the value of the taper angle (y) at which the area loss rate is 4.0% for any planar area (x) can be expressed by the following equation (A): y = -7.956lnx + 113.340 …(A) Therefore, the inventors' studies revealed that when the planar area x and the taper angle y satisfy the following equation (1), the metal mask can be suitably used for manufacturing components of MLCCs. y ≥ -7.956ln(x) + 113.340 …(1)

[0039] Similarly, when the corner radius R at which the area loss rate is 4.0% was plotted as shown in Figure 14 and the curve passing through all points was calculated, it was found that the value of the corner radius R (z) at which the area loss rate is 4.0% for any planar area (x) can be expressed by the following equation (B): z = 6.5999lnx - 41.327 …(B) Therefore, the inventors' investigation revealed that when the planar area x and the corner radius R z satisfy the following equation (2), the metal mask can be suitably used for manufacturing components of MLCCs: z ≤ 6.5999ln(x) - 41.327 …(2)

[0040] Similar studies were conducted for the step height and step width in the short-side direction. Figure 15 shows the planar area of ​​the through-hole of the metal mask, which is 20,000 μm². ２shows the examination results at that time. When calculating the step height at which the area loss rate becomes 4.0% from the equation obtained by curve fitting the plotted data, it was 15.6 μm. In Fig. 16, the planar area of the penetration part of the through hole of the metal mask is 15,000 μm ２ shows the examination results at that time. When calculating the step height at which the area loss rate becomes 4.0% from the equation obtained by curve fitting the plotted data, it was 12.8 μm. In Fig. 17, the planar area of the penetration part of the through hole of the metal mask is 12,000 μm ２ shows the examination results at that time. When calculating the step height at which the area loss rate becomes 4.0% from the equation obtained by curve fitting the plotted data, it was 11.1 μm. In Fig. 18, the planar area of the penetration part of the through hole of the metal mask is 10,000 μm ２ shows the examination results at that time. When calculating the step height at which the area loss rate becomes 4.0% from the equation obtained by curve fitting the plotted data, it was 8.5 μm.

[0041] In Fig. 19, the planar area of the penetration part of the through hole of the metal mask is 8,000 μm ２ shows the examination results at that time. When calculating the step height at which the area loss rate becomes 4.0% from the equation obtained by curve fitting the plotted data, it was 6.5 μm. In Fig. 20, the planar area of the penetration part of the through hole of the metal mask is 6,000 μm ２ shows the examination results at that time. When calculating the step height at which the area loss rate becomes 4.0% from the equation obtained by curve fitting the plotted data, it was 6.2 μm. In Fig. 21, the planar area of the penetration part of the through hole of the metal mask is 4,000 μm ２ shows the examination results at that time. When calculating the step height at which the area loss rate becomes 4.0% from the equation obtained by curve fitting the plotted data, it was 6.0 μm. In Fig. 22, the planar area of the penetration part of the through hole of the metal mask is 3,000 μm ２ shows the examination results at that time. When calculating the step height at which the area loss rate becomes 4.0% from the equation obtained by curve fitting the plotted data, it was 5.6 μm.

[0042] Eight points from FIGS. 15 to 22 where the area loss rate is 4.0% were plotted as shown in FIG. 23, and when a curve passing through all the points was calculated, it was found that the value of the step height (ySH) at which the area loss rate is 4.0% for an arbitrary planar area (x) can be expressed by the following formula (C). ySH = 4.4232e7E - 05x... (C) Therefore, as a result of the inventors' study, it became clear that when the planar area x and the step height ySH are in a relationship satisfying the following formula (3), the metal mask can be suitably used for the purpose of manufacturing a component of an MLCC. ySH ≤ 4.4232e7E - 05x... (3)

[0043] FIG. 24 shows the results of the study when the planar area of the through-hole portion of the metal mask is 20,000 μm ２ . When the step width at which the area loss rate is 4.0% was calculated from the formula obtained by curve-fitting the plotted data, it was 10.4 μm. FIG. 25 shows the results of the study when the planar area of the through-hole portion of the metal mask is 15,000 μm ２ . When the step width at which the area loss rate is 4.0% was calculated from the formula obtained by curve-fitting the plotted data, it was 8.0 μm. FIG. 26 shows the results of the study when the planar area of the through-hole portion of the metal mask is 12,000 μm ２ . When the step width at which the area loss rate is 4.0% was calculated from the formula obtained by curve-fitting the plotted data, it was 6.7 μm. FIG. 27 shows the results of the study when the planar area of the through-hole portion of the metal mask is 10,000 μm ２ . When the step width at which the area loss rate is 4.0% was calculated from the formula obtained by curve-fitting the plotted data, it was 5.2 μm.

[0044] FIG. 28 shows the results of the study when the planar area of the through-hole portion of the metal mask is 20,000 μm ２ . When the step width at which the area loss rate is 4.0% was calculated from the formula obtained by curve-fitting the plotted data, it was 4.0 μm. FIG. 29 shows the results of the study when the planar area of the through-hole portion of the metal mask is 15,000 μm ２The results of the study at that time are shown. From the curve approximation equation of the plotted data, the step width at which the area loss rate was 4.0% was calculated to be 3.4 μm. Figure 30 shows the planar area of ​​the through-hole portion of the metal mask at 12,000 μm². ２ The results of the study at that time are shown. From the equation obtained by approximating the plotted data by a curve, the step width at which the area loss rate is 4.0% was calculated to be 3.2 μm. Figure 31 shows the planar area of ​​the through-hole portion of the metal mask at 10,000 μm. ２ The results of the study at that time are shown below. From the equation obtained by approximating the plotted data by a curve, the step width at which the area loss rate was 4.0% was calculated to be 3.0 μm.

[0045] The inventors plotted eight points from Figure 24 to Figure 31 where the area loss rate is 4.0% as shown in Figure 32, and calculated the curve passing through all points. They found that the value of the step width (ySw) at which the area loss rate is 4.0% for any planar area (x) can be expressed by the following equation (D): ySw = 2.3008e8E-05x …(D) Therefore, the inventors' studies revealed that when the planar area x and the step width ySw satisfy the following equation (4), the metal mask can be suitably used for manufacturing components of MLCCs. ySw ≤ 2.3008e8E-05x …(4)

[0046] In this study, it was considered that good rectangularity is achieved when two of the three parameters related to the through-hole shape, namely the step height in the short-side direction and the taper angle in the short-side direction, or the two of the same, namely the step width in the short-side direction and the taper angle in the short-side direction, are within the range described above. It was also considered that the rectangularity is further improved when the step height in the short-side direction, the taper angle in the short-side direction, and the step width in the short-side direction are all within the range described above. Figure 33 shows an internal electrode member for a multilayer ceramic capacitor formed using the metal mask according to this embodiment based on the above findings. The internal electrode member 50 shown in Figure 33 has a thin metal film 52 formed by sputtering on a dielectric sheet 100. The general shape of the thin metal film 52 in plan view is a rectangle with rounded corners, and the difference (area loss rate) between the area of ​​the thin metal film 52 in plan view and the area of ​​the ideal rectangle IL shown by the dashed line in Figure 33 is 4.0% or less. In this embodiment, the internal electrode member 50 can be laminated as is if the dimensions of the metal thin film 52 are equivalent to one MLCC, or if the dimensions are equivalent to two MLCCs, the metal thin film 52 can be divided into two equal parts in the longitudinal direction and laminated, thereby contributing to the production of an MLCC with good electrical performance.

[0047] Although the present invention has been described above, the specific configuration is not limited to these embodiments, and modifications and combinations of the configuration that do not depart from the spirit of the present invention are also included.

[0048] For example, the substrate of the metal mask according to the present invention is not limited to magnetic stainless steel such as SUS430 used in the above-mentioned study. For example, other magnetic metal substrates made of alloys such as Invar or SuperInvar may be used. When the thin-film metal substrate is formed of a magnetic metal material as described above, there is the advantage that it can be fixed to the film deposition apparatus using magnetic force. If the substrate can be fixed by a method other than magnetic attraction, the substrate may be a non-magnetic stainless steel such as SUS304. Furthermore, the thickness of the substrate is not limited to 50 μm as described above, and even with a different thickness, as long as the step height and taper angle in the short-side direction, or the step width and taper angle in the short-side direction, are within the range described above, the same effect will be achieved.

[0049] In addition, when the metal mask according to the present invention is attached to a film deposition apparatus, either surface in the thickness direction can be positioned facing the substrate, and the step height will change accordingly. However, in this invention, the step height is defined as the lower of the above values.

[0050] (Second Embodiment) A second embodiment of the present invention will be described with reference to Figures 34 to 62. The basic configuration of the sputtering apparatus using a metal mask in the second embodiment is the same as in the first embodiment. In the first embodiment, a group of through holes with step height, taper angle, and step width in the short-side direction of the through hole was produced, but in this embodiment, a group of through holes with step height, taper angle, and step width in the long-side direction of the through hole was produced. The following description of the same configuration and conditions as in the first embodiment will be omitted.

[0051] (Preparation of Metal Mask Samples) In this embodiment, a group of through-holes was prepared, each having 11 different combinations of step height, taper angle (hereinafter sometimes referred to as "taper angle"), and step width in the direction of the long side of the through-hole. The values ​​of step height, taper angle, and step width in the direction of the long side were confirmed by cross-sectional measurement using laser confocal scanning with a VK-X3000 laser microscope manufactured by Keyence Corporation. In this embodiment, the description of the direction of the long side may be omitted, but in the study, the values ​​for the step height, taper angle, and step width of each through-hole were used on both sides in the direction of the long side. The "direction of the long side" refers to the direction parallel to the long side of the above-mentioned approximate rectangle.

[0052] For each combination of step height, taper angle, and step width, there are eight types of planar viewing areas (μm²). ２ A through-hole of the following size was formed. Eight types of planar area (μm) were formed. ２The through holes are the same as in the first embodiment. As a result, there are 11 levels in each planar viewing area, and a total of 88 levels were examined, as in the first embodiment. 20000 (200 × 100) 15000 (173.2 × 86.6) 12000 (154.9 × 77.5) 10000 (141.4 × 70.7) 8000 (126.5 × 63.2) 6000 (109.5 × 54.8) 4000 (89.4 × 44.7) 3000 (77.5 × 38.7)

[0053] (Film deposition and measurement using a metal mask sample) A dielectric sheet was placed in the sputtering apparatus 200 and a metal mask sample was brought into close contact with it, and a film was deposited on the dielectric sheet under the same conditions as in the first embodiment.

[0054] Figure 34 shows the area loss rate at each level for each step height in the long side direction. Figure 35 also shows the corner radius at each level for each step height in the long side direction. When examining the relationship between the area loss rate value and its variation (3σ), it was found that when the average area loss rate exceeds 4%, the variation also exceeds 4%, which is considered undesirable for achieving high-capacity and miniaturization high-performance features by increasing the number of layers through thinning the internal electrode of the MLCC.

[0055] Note that for some levels that are far from the boundary between good and bad levels, the values ​​are omitted because it is obvious that they are bad.

[0056] In Figure 35, it was thought that the optimal range for the corner radius might differ depending on the area of ​​the nickel film, so the optimal range for each area was investigated. In Figure 36, the planar area of ​​the through-hole portion of the metal mask is 20,000 μm². ２ The results of the study at that time are shown. When the taper angle at which the area loss rate is 4.0% was calculated from the equation obtained by approximating the plotted data by curve, it was found to be 41.8°.

[0057] Figure 37 shows that the planar area of ​​the penetration point is 15,000 μm². ２ The results of the study at that time are shown. The taper angle at which the area loss rate is 4.0% was calculated from the curve approximation equation of the plotted data, and it was found to be 42.6°. Figure 38 shows the planar area of ​​the penetration point at 12,000 μm².２ The results of the study at that time are shown below. When the taper angle at which the area loss rate is 4.0% was calculated from the equation obtained by approximating the plotted data with a curve, it was found to be 44.3°.

[0058] Figure 39 shows that the planar area of ​​the penetration point is 10,000 μm². ２ The results of the study at that time are shown. The taper angle at which the area loss rate is 4.0% was calculated from the curve approximation equation of the plotted data, and it was found to be 47.0°. Figure 40 shows the planar area of ​​the penetration point at 8000 μm². ２ The results of the study at that time are shown below. When the taper angle at which the area loss rate is 4.0% was calculated from the equation obtained by approximating the plotted data by a curve, it was found to be 47.2°.

[0059] Figure 41 shows that the planar area of ​​the penetration point is 6000 μm². ２ The results of the study at that time are shown. The taper angle at which the area loss rate is 4.0% was calculated from the curve approximation equation of the plotted data, and it was found to be 47.3°. Figure 42 shows the planar area of ​​the penetration point at 4000 μm². ２ The results of the study at that time are shown. The taper angle at which the area loss rate is 4.0% was calculated from the curve approximation equation of the plotted data, and it was found to be 49.5°. Figure 43 shows the planar area of ​​the penetration point at 3000 μm². ２ The results of the study at that time are shown. When the taper angle at which the area loss rate is 4.0% was calculated from the curve approximation formula of the plotted data, it was found to be 54.2°. In the eight types of planar viewing areas mentioned above, it was observed that as the planar viewing area decreases, the effect of the decrease in rectangularity in the planar view due to exceeding the area loss rate of 4.0% becomes larger. From this perspective, it can be said that the importance of keeping the taper angle within the above range increases as the planar viewing area decreases.

[0060] The inventors plotted eight points from Figure 36 to Figure 43 where the area loss rate is 4.0% as shown in Figure 44, and calculated the curve passing through all points. They found that the value of the taper angle (y) at which the area loss rate is 4.0% for any planar area (x) can be expressed by the following equation (E): y = -5.879lnx + 99.725 …(E) Therefore, the inventors' studies revealed that when the planar area x and the taper angle y satisfy the following equation (5), the metal mask can be suitably used for manufacturing components of MLCCs. y ≥ -5.879lnx + 99.725 …(5)

[0061] Similar studies were conducted for the step height and step width in the long-side direction. Figure 45 shows the planar area of ​​the through-hole of the metal mask, which is 20,000 μm². ２ The results of the study at that time are shown. The step height at which the area loss rate is 4.0% was calculated from the curve approximation equation of the plotted data, and it was found to be 12.9 μm. Figure 46 shows that the planar area of ​​the through-hole portion of the metal mask is 15,000 μm. ２ The results of the study at that time are shown. The step height at which the area loss rate is 4.0% was calculated from the curve approximation equation of the plotted data, and it was found to be 10.7 μm. Figure 47 shows that the planar area of ​​the through-hole portion of the metal mask is 12,000 μm. ２ The results of the study at that time are shown. The step height at which the area loss rate is 4.0% was calculated from the curve approximation equation of the plotted data, and it was found to be 9.7 μm. Figure 48 shows the planar area of ​​the through-hole portion of the metal mask at 10,000 μm. ２ The results of the study at that time are shown. When the step height at which the area loss rate is 4.0% was calculated from the curve approximation equation of the plotted data, it was found to be 7.6 μm.

[0062] Figure 49 shows that the planar area of ​​the through-hole in the metal mask is 8,000 μm². ２ The results of the study at that time are shown. The step height at which the area loss rate is 4.0% was calculated from the curve approximation equation of the plotted data, and it was found to be 6.2 μm. Figure 50 shows that the planar area of ​​the through-hole portion of the metal mask is 6,000 μm. ２The results of the study at that time are shown. The step height at which the area loss rate is 4.0% was calculated from the curve approximation equation of the plotted data, and it was found to be 5.9 μm. Figure 51 shows that the planar area of ​​the through-hole of the metal mask is 4,000 μm. ２ The results of the study at that time are shown. The step height at which the area loss rate is 4.0% was calculated from the curve approximation equation of the plotted data, and it was found to be 5.2 μm. Figure 52 shows the planar area of ​​the through-hole portion of the metal mask at 3,000 μm. ２ The results of the study at that time are shown. When the step height at which the area loss rate is 4.0% was calculated from the equation obtained by approximating the plotted data with a curve, it was found to be 4.4 μm.

[0063] The inventors plotted eight points from Figure 45 to Figure 52 where the area loss rate is 4.0% as shown in Figure 53, and calculated the curve passing through all points. They found that the value of the step height (ySH) at which the area loss rate is 4.0% for any planar area (x) can be expressed by the following equation (G): ySH = 3.9379e6E-05x …(G) Therefore, the inventors' studies revealed that when the planar area x and the step height ySH satisfy the following equation (6), the metal mask can be suitably used for manufacturing components of MLCCs. ySH ≤ 3.9379e6E-05x …(6)

[0064] Figure 54 shows that the planar area of ​​the through-hole in the metal mask is 20,000 μm². ２ The results of the study at that time are shown. From the curve approximation equation of the plotted data, the step width at which the area loss rate is 4.0% was calculated to be 6.8 μm. Figure 55 shows the planar area of ​​the through-hole portion of the metal mask at 15,000 μm². ２ The results of the study at that time are shown. From the curve approximation equation of the plotted data, the step width at which the area loss rate is 4.0% was calculated to be 5.3 μm. Figure 56 shows the planar area of ​​the through-hole portion of the metal mask at 12,000 μm². ２The results of the study at that time are shown. From the curve approximation equation of the plotted data, the step width at which the area loss rate is 4.0% was calculated to be 4.5 μm. Figure 57 shows the planar area of ​​the through-hole portion of the metal mask at 10,000 μm. ２ The results of the study at that time are shown below. When the step width at which the area loss rate is 4.0% was calculated from the equation obtained by approximating the plotted data with a curve, it was found to be 3.2 μm.

[0065] Figure 58 shows that the planar area of ​​the through-hole in the metal mask is 8,000 μm². ２ The results of the study at that time are shown. From the equation obtained by approximating the plotted data by a curve, the step width at which the area loss rate is 4.0% was calculated to be 2.5 μm. Figure 59 shows the planar area of ​​the through-hole portion of the metal mask at 6,000 μm. ２ The results of the study at that time are shown. From the curve approximation equation of the plotted data, the step width at which the area loss rate is 4.0% was calculated to be 2.0 μm. Figure 60 shows the planar area of ​​the through-hole portion of the metal mask at 4,000 μm. ２ The results of the study at that time are shown. From the curve approximation equation of the plotted data, the step width at which the area loss rate was 4.0% was calculated to be 1.8 μm. Figure 61 shows the planar area of ​​the through-hole portion of the metal mask at 3,000 μm. ２ The results of the study at that time are shown below. When the step width at which the area loss rate was 4.0% was calculated from the equation obtained by approximating the plotted data with a curve, it was found to be 1.6 μm.

[0066] The inventors plotted eight points from Figure 54 to Figure 61 where the area loss rate is 4.0% as shown in Figure 62, and calculated the curve passing through all points. They found that the value of the step width (ySw) at which the area loss rate is 4.0% for any planar area (x) can be expressed by the following equation (G): ySw = 1.2517e9E-05x …(G) Therefore, the inventors' studies revealed that when the planar area x and the step width ySw satisfy the following equation (7), the metal mask can be suitably used for manufacturing components of MLCCs. ySw ≤ 1.2517e9E-05x …(7)

[0067] In this study, it was considered that good rectangularity is achieved when two of the three parameters related to the through-hole shape—the step height and taper angle in the long-side direction, or the step width and taper angle in the long-side direction—are within the aforementioned ranges. It was also considered that the rectangularity is further improved when all three parameters—the step height, taper angle, and step width in the long-side direction—are within the aforementioned ranges. For example, the thickness of the substrate is not limited to 50 μm as in the above study; even with different thicknesses, similar effects are achieved as described above when the step height and taper angle in the long-side direction, or the step width and taper angle in the long-side direction, are within the aforementioned ranges.

[0068] (Third Embodiment) A third embodiment of the present invention will be described with reference to Figures 63A to 92. The basic configuration of the sputtering apparatus using a metal mask in the third embodiment is the same as in the first and second embodiments. In the first and second embodiments, through-hole groups with step height, taper angle, and step width in the short and long sides of the through-hole were produced, but in this embodiment, through-hole groups with step height, taper angle, and step width at the corners of the through-holes were produced. The following description of the same configuration and conditions as in the first and second embodiments will be omitted.

[0069] (Preparation of Metal Mask Samples) In this embodiment, a group of through-holes was prepared, each having 11 different combinations of step height, taper angle (hereinafter sometimes referred to as "taper angle"), and step width at the corners of the through-holes. The values ​​of step height, taper angle, and step width at the corners were confirmed by cross-sectional measurement using a VK-X3000 laser microscope manufactured by Keyence Corporation. In this embodiment, the description of the corners may be omitted, but in the study, the values ​​at each corner were used as the step height, taper angle, and step width of the through-holes.

[0070] After each sample was completed, the metal mask was cut. For the step height, the thickness dimension of the step height was measured using a laser confocal scan with a measuring instrument (Keyence VK-X3000) while observing the dimensions from the side of the through-hole, in directions where the long and short sides intersect at 45° at the corners (see Figure 63A). For the taper angle, the metal mask was measured across the through-hole in directions where the long and short sides intersect at 45°, in directions where it was observable from the second surface 2b side, which is the target flight side, using the same measuring instrument (Keyence VK-X3000) for laser confocal scanning. After acquiring the cross-sectional profile data, the taper angle θ was calculated by processing the data. Furthermore, regarding the step width, the step width w1 was calculated by laser confocal scanning using the same measuring instrument (Keyence VK-X3000) while observing the metal mask from both the second surface 2b (the target flight side) and the first surface 2a (the opposite side) across the through-hole, with the metal mask intersecting the long and short sides at 45° angles. Cross-sectional profile data was acquired and then processed to calculate the step width w1.

[0071] For each combination of step height, taper angle, and step width, there are eight types of planar viewing area (μm²). ２ A through-hole of the following size was formed. Eight types of planar area (μm) were formed. ２ The through holes are the same as in the first and second embodiments. As a result, there are 11 levels in each set, and a total of 88 levels were considered, similar to the first and second embodiments. 20000 (200 × 100) 15000 (173.2 × 86.6) 12000 (154.9 × 77.5) 10000 (141.4 × 70.7) 8000 (126.5 × 63.2) 6000 (109.5 × 54.8) 4000 (89.4 × 44.7) 3000 (77.5 × 38.7)

[0072] (Film deposition and measurement using a metal mask sample) A dielectric sheet was placed in the sputtering apparatus 200 and a metal mask sample was brought into close contact with it, and a film was deposited on the dielectric sheet under the same conditions as in the first and second embodiments.

[0073] In this embodiment, the corner radius R was measured at a position that intersects the long and short sides of the inscribed circle arc at a 45° angle from the arc center of the inscribed circle at the corner, as shown in Figure 63B.

[0074] Figure 64 shows the loss rate at each level for each step height, taper angle, and step width of the corner section. Figure 65 shows the relationship between the average loss rate and the loss rate variability (3σ) at each level. When examining the relationship between the loss rate value and its variability (3σ), it was found that when the average loss rate was 4% or less, the maximum variability was 1.9%, while when the average loss rate was 5% or less, the maximum variability was 4.0%. When the average loss rate exceeds 4%, the variability becomes large, which is undesirable for achieving high-capacity and miniaturization by increasing the number of layers through thinning the internal electrode of the MLCC. Therefore, to reduce the loss rate, the upper limit of the average loss rate is set to 4%.

[0075] Based on this finding, in Figure 64, cells with a loss rate of 4.0% or less (good levels) are given a gray background color, while cells with an average loss rate exceeding 4.0% (bad levels) are shown in white. Note that for some levels far from the boundary between good and bad levels, the values ​​are omitted because it is obvious that they are bad.

[0076] In Figure 64, it was thought that the optimal ranges for step height, taper angle, and step width at the corners might differ depending on the area of ​​the nickel film. Therefore, the optimal ranges for step height, taper angle, and step width were examined for each area. The step height at the corners was defined as SH (μm), the taper angle as TA (°), and the step width as SW (μm).

[0077] Figure 66 shows that the planar area of ​​the through-hole in the metal mask is 20,000 μm². ２The relationship between the step height SH (μm) and the area loss rate is shown. From the curve approximation equation of the plotted data, the step height SH at which the loss rate is 4.0% was calculated to be 16.4 μm. Figure 67 shows the planar area of ​​the through-hole of the metal mask at 15,000 μm. ２ The relationship between the step height SH (μm) and the area loss rate is shown. Using a curve approximation of the plotted data, the step height SH at which the loss rate is 4.0% was calculated to be 13.6 μm.

[0078] Figure 68 shows that the planar area of ​​the through-hole in the metal mask is 12,000 μm². ２ The relationship between the step height SH (μm) and the area loss rate is shown. From the curve approximation equation of the plotted data, the step height SH at which the loss rate is 4.0% was calculated to be 12.0 μm. Figure 69 shows the planar area of ​​the through-hole of the metal mask at 10,000 μm. ２ The relationship between the step height SH (μm) and the area loss rate is shown. Using a curve approximation of the plotted data, the step height SH at which the loss rate is 4.0% was calculated to be 9.6 μm.

[0079] Figure 70 shows that the planar area of ​​the through-hole in the metal mask is 8000 μm². ２ The relationship between the step height SH (μm) and the area loss rate is shown. From the curve approximation equation of the plotted data, the step height SH at which the loss rate is 4.0% was calculated to be 8.2 μm. Figure 71 shows the planar area of ​​the through-hole of the metal mask at 6000 μm². ２ The relationship between the step height SH (μm) and the area loss rate is shown. Using a curve approximation of the plotted data, the step height SH at which the loss rate is 4.0% was calculated to be 8.1 μm.

[0080] Figure 72 shows that the planar area of ​​the through-hole in the metal mask is 4000 μm². ２The relationship between the step height SH (μm) and the area loss rate is shown. From the curve approximation equation of the plotted data, the step height SH at which the loss rate is 4.0% was calculated to be 7.5 μm. Figure 73 shows the planar area of ​​the through-hole of the metal mask at 3000 μm. ２ The relationship between the step height SH (μm) and the area loss rate is shown. Using a curve approximation of the plotted data, the step height SH at which the loss rate is 4.0% was calculated to be 7.1 μm.

[0081] Figure 74 shows the relationship between the planar area of ​​the through-hole in a metal mask and the step height SH. Eight points from Figures 66 to 73, where the loss rate is 4.0%, were plotted as shown in Figure 74. A curve passing through all these points was calculated, revealing that for any planar area (x), the step height SH (μm) at which the loss rate is 4.0% can be expressed by the following equation (H): SH = 5.9399e^(5E-05x) ... (H). Therefore, the inventors' investigation revealed that if the planar area x and the step height SH satisfy the following relationship (8), the metal mask can be suitably used for manufacturing components of MLCCs. SH ≤ 5.9399e^(5E-05x) ... (8)

[0082] Similarly, Figure 75 shows that the planar area of ​​the through-hole in the metal mask is 20,000 μm². ２ The relationship between the taper angle TA (°) and the area loss rate is shown in Figure 76, where the planar area of ​​the through-hole of the metal mask is 20,000 μm². ２ The relationship between the step width SW (μm) and the area loss rate is shown. Using a curve approximation equation based on the plotted data, the taper angle TA at which the loss rate is 4.0% was calculated to be 34.4°. Furthermore, using a curve approximation equation based on the plotted data, the step width SW at which the loss rate is 4.0% was calculated to be 14.7 μm.

[0083] Figure 77 shows that the planar area of ​​the through-hole in the metal mask is 15,000 μm². ２The relationship between the taper angle TA (°) and the area loss rate is shown in Figure 78, where the planar area of ​​the through-hole of the metal mask is 15,000 μm². ２ The relationship between the step width SW (μm) and the area loss rate is shown. Using a curve approximation equation based on the plotted data, the taper angle TA at which the loss rate is 4.0% was calculated to be 35.9°. Furthermore, using a curve approximation equation based on the plotted data, the step width SW at which the loss rate is 4.0% was calculated to be 11.9 μm.

[0084] Figure 79 shows that the planar area of ​​the through-hole in the metal mask is 12,000 μm². ２ The relationship between the taper angle TA (°) and the area loss rate is shown in Figure 80, where the planar area of ​​the through-hole of the metal mask is 12,000 μm². ２ The relationship between the step width SW (μm) and the area loss rate is shown. Using a curve approximation equation based on the plotted data, the taper angle TA at which the loss rate is 4.0% was calculated to be 37.9°. Furthermore, using a curve approximation equation based on the plotted data, the step width SW at which the loss rate is 4.0% was calculated to be 10.3 μm.

[0085] Figure 81 shows that the planar area of ​​the through-hole in the metal mask is 10,000 μm². ２ The relationship between the taper angle TA (°) and the area loss rate is shown in Figure 82, where the planar area of ​​the through-hole of the metal mask is 10,000 μm². ２ The relationship between the step width SW (μm) and the area loss rate is shown. Using a curve approximation equation based on the plotted data, the taper angle TA at which the loss rate is 4.0% was calculated to be 39.7°. Furthermore, using a curve approximation equation based on the plotted data, the step width SW at which the loss rate is 4.0% was calculated to be 7.9 μm.

[0086] Figure 83 shows that the planar area of ​​the through-hole in the metal mask is 8000 μm². ２ The relationship between the taper angle TA (°) and the area loss rate is shown in Figure 84, where the planar area of ​​the through-hole of the metal mask is 8000 μm². ２The relationship between the step width SW (μm) and the area loss rate is shown. Using a curve approximation equation based on the plotted data, the taper angle TA at which the loss rate is 4.0% was calculated to be 41.7°. Furthermore, using a curve approximation equation based on the plotted data, the step width SW at which the loss rate is 4.0% was calculated to be 7.2 μm.

[0087] Figure 85 shows that the planar area of ​​the through-hole in the metal mask is 6000 μm². ２ The relationship between the taper angle TA (°) and the area loss rate is shown in Figure 86, where the planar area of ​​the through-hole of the metal mask is 6000 μm². ２ The relationship between the step width SW (μm) and the area loss rate is shown. Using a curve approximation equation based on the plotted data, the taper angle TA at which the loss rate is 4.0% was calculated to be 42.0°. Furthermore, using a curve approximation equation based on the plotted data, the step width SW at which the loss rate is 4.0% was calculated to be 7.1 μm.

[0088] Figure 87 shows that the planar area of ​​the through-hole in the metal mask is 4000 μm². ２ The relationship between the taper angle TA (°) and the area loss rate is shown in Figure 88, where the planar area of ​​the through-hole of the metal mask is 4000 μm². ２ The relationship between the step width SW (μm) and the area loss rate is shown. Using a curve approximation equation based on the plotted data, the taper angle TA at which the loss rate is 4.0% was calculated to be 45.2°. Furthermore, using a curve approximation equation based on the plotted data, the step width SW at which the loss rate is 4.0% was calculated to be 6.9 μm.

[0089] Figure 89 shows that the planar area of ​​the through-hole in the metal mask is 3000 μm². ２ The relationship between the taper angle TA (°) and the area loss rate is shown in Figure 90, where the planar area of ​​the through-hole of the metal mask is 3000 μm². ２The relationship between the step width SW (μm) and the area loss rate is shown. Using a curve approximation equation based on the plotted data, the taper angle TA at which the loss rate is 4.0% was calculated to be 49.2°. Furthermore, using a curve approximation equation based on the plotted data, the step width SW at which the loss rate is 4.0% was calculated to be 5.1 μm.

[0090] Figure 91 shows the relationship between the planar area of ​​the through-hole in the metal mask and the taper angle TA. Figure 92 shows the relationship between the planar area of ​​the through-hole in the metal mask and the step width SW. Similar to the step height SH, for the taper angle TA (°) at which the loss rate is 4.0%, eight points (Figures 75, 77, 79, 81, 83, 85, 87, 89) were plotted as shown in Figure 91, and a curve passing through all points was calculated. It was found that the value of the taper angle TA (°) at which the loss rate is 4.0% for any planar area (x) can be expressed by the following formula (I): TA = -7.407ln(x) + 107.52 …(I) Therefore, the inventors' studies revealed that if the planar area x and the taper angle TA satisfy the relationship in the following formula (9), the metal mask can be suitably used for manufacturing components of MLCCs. TA≧-7.407ln(x)+107.52...(9)

[0091] For a step width SW (μm) that results in a loss rate of 4.0%, eight points (Figures 76, 78, 80, 82, 84, 86, 88, and 90) were plotted as shown in Figure 92. A curve passing through all these points was calculated, revealing that for any planar area (x), the value of the step width SW (μm) that results in a loss rate of 4.0% can be expressed by the following equation (J): SW = 4.8184e^(6E-05x) …(J). Therefore, the inventors' investigation revealed that if the planar area x and the step width SW satisfy the following relationship (10), the metal mask can be suitably used for manufacturing components of MLCCs: SW ≤ 4.8184e^(6E-05x) …(10).

[0092] Preferred embodiments of the present invention have been described above with reference to the attached drawings, but the present invention is not limited to these examples. The shapes and combinations of the constituent members shown in the above examples are merely examples, and can be modified in various ways based on design requirements, etc., without departing from the spirit of the present invention.

[0093] 1 Metal mask 1a Through hole 50 Internal electrode material for multilayer ceramic capacitor 52 Metal thin film 100 Dielectric sheet (substrate) 101 Thin film (internal electrode) h1, SH Step height IL Ideal rectangle w1, SW Step width θ, TA Taper angle

Claims

1. A metal mask for manufacturing internal electrodes of a multilayer ceramic capacitor, wherein a rectangular through-hole is formed in a metal substrate, and the planar area of ​​the through-hole is 20,000 μm². ２ A metal mask having the following characteristics: the step height in the short-side direction of the through hole is 15.6 μm or less, and the taper angle in the short-side direction is 34.9° or more.

2. A metal mask for manufacturing internal electrodes of a multilayer ceramic capacitor, wherein a rectangular through-hole is formed in a metal substrate, and the planar area of ​​the through-hole is 20,000 μm². ２ A metal mask having the following characteristics: the step width in the short-side direction of the through hole is 10.4 μm or less, and the taper angle in the short-side direction is 34.9° or more.

3. The planar viewing area is 15,000 μm² ２ The metal mask according to claim 1, wherein the step height in the short-side direction is 12.8 μm or less, and the taper angle in the short-side direction is 36.9° or more.

4. The planar viewing area is 15,000 μm² ２ The metal mask according to claim 2, wherein the step width in the short-side direction is 8.0 μm or less, and the taper angle in the short-side direction is 36.9° or more.

5. The planar area is 12,000 μm² ２ The metal mask according to claim 1, wherein the step height in the short-side direction is 11.1 μm or less, and the taper angle in the short-side direction is 38.8° or more.

6. The planar viewing area is 12,000 μm² ２ The metal mask according to claim 2, wherein the step width in the short-side direction is 6.7 μm or less, and the taper angle in the short-side direction is 38.8° or more.

7. The planar viewing area is 10,000 μm² ２ The metal mask according to claim 1, wherein the step height in the short-side direction is 8.5 μm or less, and the taper angle in the short-side direction is 40.5° or more.

8. The planar area is 10,000 μm² ２ The metal mask according to claim 2, wherein the step width in the short-side direction is 5.2 μm or less, and the taper angle in the short-side direction is 40.5° or more.

9. The planar view area is 8,000 μm ２ or less, the step height in the short side direction is 6.5 μm or less, and the taper angle in the short side direction is 40.2° or more. The metal mask according to claim 1.

10. The planar viewing area is 8,000 μm² ２ The metal mask according to claim 2, wherein the step width in the short-side direction is 4.0 μm or less, and the taper angle in the short-side direction is 40.2° or more.

11. The planar area is 6,000 μm² ２ The metal mask according to claim 1, wherein the step height in the short-side direction is 6.2 μm or less, and the taper angle in the short-side direction is 44.2° or more.

12. The planar area is 6,000 μm² ２ The metal mask according to claim 2, wherein the step width in the short-side direction is 3.4 μm or less, and the taper angle in the short-side direction is 44.2° or more.

13. The planar area is 4,000 μm² ２ The metal mask according to claim 1, wherein the step height in the short-side direction is 6.0 μm or less, and the taper angle in the short-side direction is 47.1° or more.

14. The planar area is 4,000 μm² ２ The metal mask according to claim 2, wherein the step width in the short-side direction is 3.2 μm or less, and the taper angle in the short-side direction is 47.1° or more.

15. The planar area is 3,000 μm² ２ The metal mask according to claim 1, wherein the step height in the short-side direction is 5.6 μm or less, and the taper angle in the short-side direction is 50.4° or more.

16. The planar area is 3,000 μm² ２ The metal mask according to claim 2, wherein the step width in the short-side direction is 3.0 μm or less, and the taper angle in the short-side direction is 50.4° or more.

17. A metal mask for manufacturing internal electrodes of a multilayer ceramic capacitor, wherein a rectangular through-hole is formed in a metal substrate, and the planar area of ​​the through-hole is x (μm²). ２ The taper angle y (°) in the short-side direction of the through hole satisfies the following equation (1), and the planar area x (μm) of the through hole. ２ A metal mask in which the step height ySH (μm) in the short-side direction of the through hole satisfies the following equation (2): y ≥ -7.956ln(x) + 113.340 ... (1) ySH ≤ 4.4232e7E - 05x ... (2) 18. A metal mask for manufacturing internal electrodes of a multilayer ceramic capacitor, wherein a rectangular through-hole is formed in a metal substrate, and the planar area of ​​the through-hole is x (μm²). ２ The taper angle y (°) in the short-side direction of the through hole satisfies the following equation (1), and the planar area x (μm) of the through hole. ２ A metal mask in which the length of the through hole and the step width ySw (μm) in the short-side direction of the through hole satisfy the following equation (3): y ≥ -7.956ln(x) + 113.340…(1) ySw ≤ 2.3008e8E-05x…(3) 19. An internal electrode member for a multilayer ceramic capacitor, wherein a thin metal film is provided on a dielectric sheet, and the plan view of the thin metal film is a rectangle with rounded corners, and the area x (μm²) of an ideal rectangle having the same dimensions as the rectangle's long and short sides is the same as the rectangle's area. ２ An internal electrode member for a multilayer ceramic capacitor, wherein the radius z (μm) of the circle inscribed in the rounded corner of the metal thin film satisfies the following equation: z ≤ 6.5999ln(x) - 41.327 20. A method for manufacturing an internal electrode member for a multilayer ceramic capacitor, wherein a thin metal film is provided on a dielectric sheet, and the thin metal film is formed on the dielectric sheet using a metal mask according to any one of claims 1 to 18.

21. A metal mask for manufacturing internal electrodes of a multilayer ceramic capacitor, wherein a rectangular through-hole is formed in a metal substrate, and the planar area of ​​the through-hole is 20,000 μm². ２ A metal mask having the following characteristics: the step height in the long-side direction of the through hole is 12.9 μm or less, and the taper angle in the long-side direction is 41.8° or more.

22. A metal mask for manufacturing internal electrodes of a multilayer ceramic capacitor, wherein a rectangular through-hole is formed in a metal substrate, and the planar area of ​​the through-hole is 20,000 μm². ２ A metal mask having the following characteristics: the step width in the long-side direction of the through hole is 6.8 μm or less, and the taper angle in the long-side direction is 41.8° or more.

23. The planar area is 15,000 μm² ２ The metal mask according to claim 21, wherein the step height in the long side direction is 10.7 μm or less, and the taper angle in the long side direction is 42.6° or more.

24. The planar area is 15,000 μm² ２ The metal mask according to claim 22, wherein the step width in the long side direction is 5.3 μm or less, and the taper angle in the long side direction is 42.6° or more.

25. The planar area is 12,000 μm² ２ The metal mask according to claim 21, wherein the step height in the long side direction is 9.7 μm or less, and the taper angle in the long side direction is 44.3° or more.

26. The planar area is 12,000 μm² ２ The metal mask according to claim 22, wherein the step width in the long side direction is 4.5 μm or less, and the taper angle in the long side direction is 44.3° or more.

27. The planar area is 10,000 μm² ２ The metal mask according to claim 21, wherein the step height in the long side direction is 7.6 μm or less, and the taper angle in the long side direction is 47.0° or more.

28. The planar area is 10,000 μm² ２ The metal mask according to claim 22, wherein the step width in the long side direction is 3.2 μm or less, and the taper angle in the long side direction is 47.0° or more.

29. The planar area is 8,000 μm² ２ The metal mask according to claim 21, wherein the step height in the long side direction is 6.2 μm or less, and the taper angle in the long side direction is 47.2° or more.

30. The planar viewing area is 8,000 μm² ２ The metal mask according to claim 22, wherein the step width in the long side direction is 2.5 μm or less, and the taper angle in the long side direction is 47.2° or more.

31. The planar area is 6,000 μm² ２ The metal mask according to claim 21, wherein the step height in the long side direction is 5.9 μm or less, and the taper angle in the long side direction is 47.3° or more.

32. The planar area is 6,000 μm² ２ The metal mask according to claim 22, wherein the step width in the long side direction is 2.0 μm or less, and the taper angle in the long side direction is 47.3° or more.

33. The planar area is 4,000 μm² ２ The metal mask according to claim 21, wherein the step height in the long side direction is 5.2 μm or less, and the taper angle in the long side direction is 49.5° or more.

34. The planar area is 4,000 μm² ２ The metal mask according to claim 22, wherein the step width in the long side direction is 1.8 μm or less, and the taper angle in the long side direction is 49.5° or more.

35. The planar area is 3,000 μm² ２ The metal mask according to claim 21, wherein the step height in the long side direction is 4.4 μm or less, and the taper angle in the long side direction is 54.2° or more.

36. The planar area is 3,000 μm² ２ The metal mask according to claim 22, wherein the step width in the long side direction is 1.6 μm or less, and the taper angle in the long side direction is 54.2° or more.

37. A metal mask for manufacturing internal electrodes of a multilayer ceramic capacitor, wherein a rectangular through-hole is formed in a metal substrate, and the planar area of ​​the through-hole is x (μm²). ２ The taper angle y (°) in the direction of the long side of the through hole satisfies the following equation (5), and the planar area x (μm) of the through hole ２ A metal mask in which the step height ySH (μm) in the long-side direction of the through hole satisfies the following equation (6): y ≥ -5.879 lnx + 99.725 ... (5) ySH ≤ 3.9379 e6E - 05x ... (6) 38. A metal mask for manufacturing internal electrodes of a multilayer ceramic capacitor, wherein a rectangular through-hole is formed in a metal substrate, and the planar area of ​​the through-hole is x (μm²). ２ The taper angle y (°) in the direction of the long side of the through hole satisfies the following equation (5), and the planar area x (μm) of the through hole ２ A metal mask in which the step width ySw (μm) in the long-side direction of the through hole satisfies the following equation (7): y ≥ -5.879lnx + 99.725…(5) ySw ≤ 1.2517e9E-05x…(7) 39. A method for manufacturing an internal electrode member for a multilayer ceramic capacitor, wherein a thin metal film is provided on a dielectric sheet, and the thin metal film is formed on the dielectric sheet using a metal mask according to any one of claims 21 to 38.

40. A metal mask for manufacturing internal electrodes of a multilayer ceramic capacitor, wherein a rectangular through-hole is formed in a metal substrate, and the planar area of ​​the through-hole is 20,000 μm². ２ A metal mask having the following characteristics: the step height at the corner of the through hole is 16.4 μm or less, and the taper angle at the corner is 34.4° or more.

41. The metal mask according to claim 40, wherein the step width at the corner portion is 14.7 μm or less.

42. The planar area of ​​the through-hole is 15,000 μm². ２ The metal mask according to claim 40, wherein the step height at the corner portion is 13.6 μm or less, and the taper angle at the corner portion is 35.9° or more.

43. The metal mask according to claim 42, wherein the step width at the corner portion is 11.9 μm or less.

44. The planar area of ​​the through-hole is 12,000 μm². ２ The metal mask according to claim 40, wherein the step height at the corner portion is 12.0 μm or less, and the taper angle at the corner portion is 37.9° or more.

45. The metal mask according to claim 44, wherein the step width at the corner portion is 10.3 μm or less.

46. ​​The planar area of ​​the through-hole is 10,000 μm². ２ The metal mask according to claim 40, wherein the step height at the corner portion is 9.6 μm or less, and the taper angle at the corner portion is 39.7° or more.

47. The metal mask according to claim 46, wherein the step width at the corner portion is 7.9 μm or less.

48. The planar area of ​​the through-hole is 8,000 μm². ２ The metal mask according to claim 40, wherein the step height at the corner portion is 8.2 μm or less, and the taper angle at the corner portion is 41.7° or more.

49. The metal mask according to claim 48, wherein the step width at the corner portion is 7.2 μm or less.

50. The planar area of ​​the through-hole is 6,000 μm². ２ The metal mask according to claim 40, wherein the step height at the corner portion is 8.1 μm or less, and the taper angle at the corner portion is 42.0° or more.

51. The metal mask according to claim 50, wherein the step width at the corner portion is 7.1 μm or less.

52. The planar area of ​​the through-hole is 4,000 μm². ２ The metal mask according to claim 40, wherein the step height at the corner portion is 7.5 μm or less, and the taper angle at the corner portion is 45.2° or more.

53. The metal mask according to claim 52, wherein the step width at the corner portion is 6.9 μm or less.

54. The planar area of ​​the through-hole is 3,000 μm². ２ The metal mask according to claim 40, wherein the step height at the corner portion is 7.1 μm or less, and the taper angle at the corner portion is 49.2° or more.

55. The metal mask according to claim 54, wherein the step width at the corner portion is 5.1 μm or less.

56. A metal mask for manufacturing internal electrodes of a multilayer ceramic capacitor, wherein a rectangular through-hole is formed in a metal substrate, and the planar area of ​​the through-hole is x (μm²). ２ A metal mask in which the step height SH (μm) at the corner portion of the through hole satisfies the relationship SH ≤ 5.9399e^(5E-05x).

57. A metal mask for manufacturing internal electrodes of a multilayer ceramic capacitor, wherein a rectangular through-hole is formed in a metal substrate, and the planar area of ​​the through-hole is x (μm²). ２ A metal mask in which the step width SW (μm) at the corner portion of the through hole satisfies the relationship SW ≤ 4.8184e^(6E-05x).

58. A metal mask for manufacturing internal electrodes of a multilayer ceramic capacitor, wherein a rectangular through-hole is formed in a metal substrate, and the planar area of ​​the through-hole is x (μm²). ２ A metal mask in which the angle of the through hole and the taper angle TA (°) at the corner of the through hole satisfy the relationship TA ≥ -7.407ln(x) + 107.

52.

59. An internal electrode member for a multilayer ceramic capacitor, wherein a thin metal film is provided on a dielectric sheet, the general shape of the thin metal film in plan view is a rectangle with rounded corners, and the difference between the area of ​​the thin metal film in plan view and the area of ​​an ideal rectangle having the same dimensions for both its long and short sides is 4% or less of the area of ​​the ideal rectangle.

60. A method for manufacturing an internal electrode member for a multilayer ceramic capacitor, wherein a thin metal film is provided on a dielectric sheet, and the thin metal film is formed on the dielectric sheet using a metal mask according to any one of claims 40 to 58.

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