Electric-field control element and electroplating apparatus

Abstract

Provided in the present application are an electric-field control element and an electroplating apparatus. The electric-field control element is used for allowing an ionic current to pass through the electric-field control element and flow to a substrate during substrate electroplating. The substrate comprises a plurality of grains and a plurality of recessed features located within each grain and used for forming a plating pattern within the substrate. The electric-field control element is of a plate-shaped structure, and the electric-field control element is provided with a plurality of apertures. The porosity of the electric-field control element is positively correlated with the plating rate on the substrate, such that a desired plating thickness is achieved on the substrate.

Description

Electric field control element and electroplating device

[0001] This application claims priority to Chinese Patent Application No. 202411396225.3, filed September 30, 2024, the contents of which are incorporated herein by reference in their entirety. TECHNICAL FIELD

[0002] The present application belongs to the field of semiconductor technology, and relates to an electric field control element and an electroplating device. BACKGROUND

[0003] In semiconductor device manufacturing, electroplating is often used to deposit a conductive material (e.g., copper) onto a metal seed layer to fill one or more recessed features on a semiconductor wafer substrate. Electroplating is an optional method of depositing metal into vias and trenches of a wafer during a damascene process, and is also used in wafer level packaging (WLP) applications to form metal pillars and metal lines on a wafer substrate.

[0004] In some electroplated substrates, a portion of the seed layer is covered by a non-conductive masking material, such as photoresist, while another portion of the seed layer is exposed. On such substrates with partially masked seed layers, electroplating occurs only on the exposed portion of the seed layer, while the covered portion of the seed layer is protected from electroplating. Electroplating on substrates with seed layers coated with a patterned masking material (e.g., photoresist) is referred to as through-mask electroplating, which is commonly used in WLP applications.

[0005] In a horizontal electroplating process, using existing uniform flow boats results in non-uniform plating film thickness on the substrate, and the desired pattern structure on the substrate is also of varying sizes and complex, which cannot meet the complex recessed features to achieve uniform hole filling depth, resulting in very poor product performance after electroplating, which cannot meet the demand.

[0006] Therefore, in view of the problems existing in the prior art, the present applicant, based on years of experience in this industry, actively researches and improves, and thus provides the electric field control element and the electroplating device. SUMMARY

[0007] In view of the above-mentioned shortcomings of the prior art, the present application aims to provide an electric field control element and an electroplating device to solve the problem that the electroplating film thickness on the substrate surface cannot reach the desired thickness in the prior art.

[0008] To achieve the above object and other related objects, the present application provides an electric field control element for allowing ion current to pass through the electric field control element and flow to a substrate during electroplating of the substrate, the substrate including a plurality of dies and a plurality of recessed features in each die and used to form a plating pattern in the substrate, the electric field control element having a plate structure, the electric field control element having a plurality of apertures, the aperture ratio of the electric field control element being positively correlated to the plating ratio of the substrate so that the plating on the substrate reaches a desired thickness.

[0009] Optionally, each die has a plurality of plating pattern partitions obtained by partitioning according to the density of the plurality of recessed features, wherein recessed features of the same density are located in the same plating pattern partition, the electric field control element including a plurality of regions, each region one-to-one corresponding in size and position to one of the plurality of dies, each region being divided into a plurality of sub-regions, each sub-region being one-to-one corresponding in space to each plating pattern partition during electroplating, the aperture ratio of each sub-region being positively correlated to the plating ratio in the corresponding plating pattern partition so that the plating on the substrate reaches a desired thickness.

[0010] Optionally, the sub-region includes an aperture pattern composed of a plurality of apertures, and the plating pattern is configured to be different from the aperture pattern.

[0011] Optionally, the sub-region has the same plating ratio as the corresponding plating pattern partition, but has a different plating pattern.

[0012] Optionally, each sub-region varies in size, density, or a combination of both, of the apertures to match the plating ratio in the corresponding plating pattern partition.

[0013] Optionally, the aperture ratio of the apertures located on both sides of the junction between two adjacent sub-regions in the same region is the same or similar.

[0014] Optionally, the aperture ratio in each sub-region gradually changes towards the junction.

[0015] Optionally, a seed layer that can be plated during electroplating is provided between the two adjacent plating pattern partitions corresponding to the two adjacent sub-regions in the same region.

[0016] Optionally, the electric field control element includes a main body made of metal and an insulating coating covering the surface of the metal.

[0017] Optionally, the electric field control element further includes a shielding member for blocking the apertures to change the aperture ratio of the electric field control element.

[0018] Optionally, the substrate is square, the grains in the substrate are square, the electric field control element is square in shape matching the shape of the substrate, and the plurality of regions in the electric field control element are square in shape matching the grains.

[0019] Optionally, the substrate is circular, the grains in the substrate are circular or square, the electric field control element is circular in shape matching the shape of the substrate, and the plurality of regions in the electric field control element are circular or square in shape matching the grains.

[0020] The present application also provides an electroplating device, comprising a substrate holder for holding and rotating a substrate, an electroplating cavity for storing an electroplating solution, and a diffusion plate installed in the electroplating cavity, wherein the diffusion plate comprises a plurality of channels for allowing the electroplating solution to pass through and an electric field control element connected to the substrate holder, and the electric field control element is as described above.

[0021] Optionally, the electric field control element is disposed below the substrate holder, and a gap for filling the electroplating solution is provided between the substrate holder and the electric field control element.

[0022] Optionally, the gap is 2-10 mm.

[0023] Optionally, a gap is provided between the diffusion plate and the electric field control element.

[0024] As described above, the overall porosity of the electric field control element and the overall plating rate on the substrate are positively correlated in the present application, the electric field strength is adjusted according to the desired plating thickness and plating area, so that the overall plating on the substrate reaches the desired thickness, and the porosity of each sub-region on the electric field control element and the plating rate in the corresponding plating pattern partition are positively correlated, the electric field strength is adjusted according to the desired plating thickness and plating area in the plating pattern partition, so that the plating in the plating pattern partition on the substrate reaches the desired thickness.

[0025] SUMMARY

[0026] The features and performances of the present application are further described in the following examples and drawings.

[0027] FIG. 1 is a structural schematic diagram of a substrate with non-conductive masks and recessed features in an embodiment of the present application.

[0028] FIG. 2 is a structural schematic diagram of an electroplating device in the prior art.

[0029] FIG. 3 is a structural schematic diagram of an electroplating device in an embodiment of the present application.

[0030] FIG. 4 is a structural schematic diagram of a square substrate with square grains in an embodiment of the present application.

[0031] FIG. 5 is a magnified view of the grain at B in FIG. 4.

[0032] FIG. 6 is a structural schematic diagram of a grain according to another embodiment of the present application.

[0033] FIG. 7 is a structural schematic diagram of an electric field control element according to the present application, which matches the substrate in FIG. 4.

[0034] FIG. 8(a) is a structural schematic diagram of a region in an electric field control element according to an embodiment of the present application, which matches the grain in FIG. 5, and FIG. 8(b) is a structural schematic diagram of a region in an electric field control element according to another embodiment of the present application.

[0035] FIG. 9 is a structural schematic diagram of an electric field control element according to yet another embodiment of the present application, which matches the grain in FIG. 5.

[0036] FIG. 10(a) is a structural schematic diagram of a circular substrate having square grains according to an embodiment of the present application, and FIG. 10(b) is a structural schematic diagram of one of the grains in FIG. 10(a).

[0037] FIG. 11(a) is a structural schematic diagram of an electric field control element according to an embodiment of the present application, which matches the substrate in FIG. 10(a), and FIG. 11(b) is a structural schematic diagram of an electric field control element according to an embodiment of the present application, which matches the grain in FIG. 10(b).

[0038] FIG. 12 is a structural schematic diagram of a plating apparatus according to an embodiment of the present application.

[0039] Preferred embodiments of the present application

[0040] The present application is described and explained with additional specificity and detail through the use of the accompanying drawings in which:

[0041] In describing embodiments of the present application, specific terminology is employed for the sake of clarity. The description is not intended to be limited to the details of the specification, including exemplary descriptions of the preferred embodiments. Rather, the description is intended to provide an overview for the understanding of the present application and the scope of the claims. Although the description of the present application has been in the specific context of at least one embodiment of the application, those skilled in the art will recognize that the application describes only a few of the various ways to implement two-way communication systems that employ the principles described. Those skilled in the art will recognize or be able to ascertain with consideration of the disclosure of the present application many alternatives to the present application described specifically herein.

[0042] For convenience sake, spatial relationship words such as "under", "below", "lower", "lower than", "underneath", "above", "upper", "on", and the like can be used herein to describe a relationship of one element or feature to other elements or features as illustrated in the drawings. It will be understood that these spatial relationship words are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the drawings. In addition, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers can also be present. As used herein, "between" is intended to include both endpoints.

[0043] In the context of the present application, a structure described as having a first feature "on" a second feature can include embodiments in which the first and second features are formed in direct contact, and can also include embodiments in which additional features are formed between the first and second features such that the first and second features can not be in direct contact.

[0044] It is noted that the diagrams in the present embodiments only schematically illustrate the basic concept of the present application, and thus only show components related to the present application in the diagrams, rather than being drawn according to the number, shape and size of components in actual implementation. The shape, number and proportion of components in actual implementation can be arbitrarily changed, and the layout pattern of components can be more complex.

[0045] The present application provides an electric field control element and a plating device for realizing that the film thickness of multiple dies on a substrate surface is up to the desired thickness. When the substrate is plated by using the specific electric field strength plating adjusting unit in the present application, the film thickness at different positions on the substrate surface is controllable, so that the pattern thickness formed by the film on the substrate surface can be the same or different. The substrate usually includes multiple dies, each of which has a desired specific pattern, and the specific pattern of the dies can be repeated or not repeated on the entire substrate, which is not limited by the present application.

[0046] Typically, the substrate is a semiconductor substrate, and the substrate for electroplating includes an electrically conductive seed layer exposed at least at some locations on the surface of the substrate. The seed layer is typically a metal layer, which can be, for example, a copper layer (including pure copper and its alloys), a nickel layer (including NiB and NiP layers), a ruthenium layer, etc. The substrate typically has a plurality of recessed features on its surface, which are to be filled in the electroplating process. Examples of metals that can be electroplated using the provided method include, but are not limited to, copper, silver, tin, indium, chromium, tin-lead compositions, tin-silver compositions, nickel, cobalt, alloys of nickel and / or cobalt with each other and with tungsten, tin-copper compositions, tin-silver-copper compositions, gold, palladium, and various alloys including these metals and compositions. As shown in FIG. 1, the substrate 1 includes a silicon layer 101, an electrically conductive seed layer 102 overlying the silicon layer 101, and a patterned non-conductive mask 103 (e.g., photoresist) overlying the electrically conductive seed layer 102. The patterned non-conductive mask 103 includes a plurality of recessed features 104, 106, 107 therein. The plurality of recessed features 104, 106, 107 exposes the electrically conductive seed layer material at the bottom of the recessed features 104, 106, 107. The electrically conductive seed layer 102 present directly underneath the non-conductive mask 103 is shielded and does not contact the electroplating solution during electroplating. During the electroplating process, the electroplating face of the substrate is in contact with the electroplating solution, and metal is only electrodeposited in the recessed features to fill the recessed features. Since the non-conductive mask 103 is not electrically conductive, metal is not electrodeposited on the non-conductive mask 103, so the distribution of ionic current will be controlled primarily by the distribution of the exposed portions of the electrically conductive seed layer 102 on the surface of the substrate. After the electroplating is completed, the non-conductive mask 103 is removed, leaving behind electrodeposited metal posts and / or metal lines on the substrate 1, which are collectively referred to as plated bumps hereinafter, and the plated bumps constitute different plated patterns according to different distributions on the substrate.

[0047] Figure 2 shows a prior art electroplating apparatus, including a substrate holder 2 that holds and rotates a substrate 1, an electroplating chamber 3 that stores an electroplating solution, and a diffusion plate 4 installed in the electroplating chamber 3, and the diffusion plate 4 includes a plurality of passages that allow the electroplating solution to pass through. During the electroplating process, a conductive seed layer 102 (refer to Figure 1) of the substrate 1 is electrically connected to the cathode of a power supply, the substrate 1 is placed in the electroplating chamber 3 opposite to the anode (not shown), and the electroplating surface of the substrate 1 is immersed in the electroplating solution containing the metal to be plated. During the electroplating process, the substrate W is rotated around the Z axis so that the electroplating surface of the substrate 1 is more uniformly in contact with the electroplating solution. The distribution of the recessed features on the substrate matches the desired plating pattern on the substrate, however, when the patterned substrate 1 in Figure 1 is electroplated using the electroplating apparatus in Figure 2, the thickness of the plating film formed in the different recessed features cannot be uniform due to the fact that the density of the passages on the diffusion plate 4 does not necessarily match the distribution density of the different recessed features, and therefore different current densities need to be matched to the different density of the recessed features (the density of the recessed features corresponds to the plating rate below) so that the recessed features are filled to the desired height and the desired plating pattern is formed by electro-deposition.

[0048] To form a plating film of uniform thickness in different recessed features, the present application provides an electric field control element and an electroplating apparatus. The electric field control element is customized for a specific substrate so that the porosity on the electric field control element is positively correlated to the corresponding plating rate on the substrate, so that a plating film pattern of uniform thickness is formed on the surface of the substrate by electro-deposition.

[0049] The electric field control element is a component of the electroplating apparatus that provides additional resistance in the path of the ion current flowing towards the substrate, and allows the ion current to flow through the electric field control element and move towards the substrate during the electroplating process. The electric field control element is a porous plate structure, where the body of the porous plate is made of a resistive material, and the pores of the resistive material allow ions to move through the plate towards the substrate. The electric field control element is generally made of an ion-resistant material, such as polyethylene, polypropylene, polyvinylidene fluoride (PVDF), polytetrafluoroethylene, polysulfone, polyvinyl chloride (PVC), polycarbonate, and the like. In some embodiments, the electric field control element can also be made of a metal for increased rigidity, but an insulating coating needs to be added to the surface of the metal to avoid affecting the electroplating of the substrate.

[0050] As shown in FIG. 3, the present application provides a plating device comprising an electric field control element 5, which is positioned in close proximity to the substrate 1 but does not contact the substrate 1. There is a gap G between the electric field control element 5 and the substrate 1, so that the plating solution fills and flows between the electric field control element 5 and the substrate 1. The size of the gap G is such that the electric field control element 5 is in close proximity to the substrate 1, so that the ion current does not diffuse in the gap G and affect the local current density. In some embodiments, the size of the gap G is 2mm-10mm. The electric field control element 5 is connected below the substrate holder 2 and can rotate synchronously with the substrate 1 around the Z axis with the substrate holder 2. During plating, the plating solution containing metal ions to be plated in the plating cavity 3 uniformly passes through the channels of the diffusion plate 4 and moves towards the substrate 1 through the patterned electric field control element 5. In some embodiments, there is a gap between the diffusion plate 4 and the electric field control element 5, and the size of the gap is 1mm-5mm. During plating, the specific resistance pattern and aperture pattern on the electric field control element 5 change the current density flowing through the electric field control element 5 and flowing to the plating surface of the substrate 1 when the ion current passes through the electric field control element 5. The specific pattern formed by filling in the recessed features makes the grains on the entire substrate surface reach a uniform desired thickness. The electric field control element will be described in detail below.

[0051] The electric field control element is configured to allow ion current to flow through the element and to the substrate during electroplating. The electric field control element in the present application is customized to match a particular pattern of the substrate, which has a particular grain distribution and a particular intra-grain pattern. The electric field control element includes a resistive pattern and a porosity pattern, so the pattern of the electric field control element in the present application is not only the resistive pattern. The electric field control element includes a plurality of regions, each of which includes a plurality of sub-regions, each region on the electric field control element corresponds to each grain on the substrate. The substrate includes a plurality of grains, each of which corresponds to a region of the electric field control element. The pattern of the electric field control element matches (i.e. is related to) the particular pattern on the substrate, and corresponds to the pattern on the substrate in space during electroplating. As shown in FIG. 4, the substrate 1 includes a plurality of grains 11, and FIG. 5 is an enlarged view B of one grain 11 in FIG. 4, which contains a desired plating pattern. The desired plating bumps in each grain are divided into zones according to the density of the plating bumps, wherein the plating bumps of the same density are divided into the same zone. In the embodiment shown in FIG. 5, the plating bumps M in one grain are divided into four plating pattern zones according to different densities, which are a first plating pattern zone A1, a second plating pattern zone A2, a third plating pattern zone A3, and a fourth plating pattern zone A4. It should be understood that the grains can also be divided into other numbers of zones according to the density of the plating bumps, which is not limited in the present application. The electric field control element is also divided into corresponding regions according to the distribution of the grains and the intra-grain zones. As shown in FIG. 7 and FIG. 8(a), the electric field control element 5 is divided into a plurality of regions 51 according to the desired distribution of the grains 11 in FIG. 4, and the regions 51 in the electric field control element are divided into a plurality of sub-regions according to the division of the desired plating pattern in the grain 11 in FIG. 5, which are a first sub-region D1 matching the first plating pattern zone A1, a second sub-region D2 matching the second plating pattern zone A2, a third sub-region D3 matching the third plating pattern zone A3, and a fourth sub-region D4 matching the fourth plating pattern zone A4. It should be understood that only one embodiment of the division of the electric field control element 5 is shown in FIG. 7 and FIG. 8(a), and other corresponding divisions can also be made in other embodiments not shown in order to match different desired grain distributions and desired intra-grain plating pattern distributions of different substrates. The electric field control element has regions corresponding to the positions of the grains on the substrate in space, each region has sub-regions corresponding to the positions of the intra-grain zones in space, and the porosity of each sub-region changes according to the plating rate of the corresponding zone. Specifically, the greater the desired plating rate of the plating pattern in each zone on the substrate, the greater the porosity of the corresponding sub-region in space, i.e. the porosity of each sub-region is positively correlated with the plating rate of the corresponding one of the plurality of zones in the grain. The plating rate is the amount of deposited film material per unit time in each zone.It should be understood that the plating rate is related to the plating area and plating thickness in the sub-area. In some embodiments, the desired plating thickness on the same substrate is the same, the plating rate is related to the plating pattern area, and it should be noted that the plating rate is particularly related to the proportion of the plating pattern area to the total area of the specific region. In the embodiment shown in FIG. 5, the plating thickness of each sub-area is the same, and the plating rate is then related to the proportion of the plating pattern area, and the proportion of the plating area in each sub-area to the total area of the sub-area is in the order of A4>A3>A1>A2, and then the plating rate is in the order of A4>A3>A1>A2, so that the porosity of each sub-area in FIG. 8(a) is in the order of D4>D3>D1>D2. It can be seen that the fourth plating pattern sub-area A4 with the highest plating rate in the grain matches the fourth sub-area D4 with the highest porosity in the region corresponding to the space. In contrast, the second plating pattern sub-area A2 with the lowest plating rate matches the second sub-area D2 with the lowest porosity. Because the greater the porosity in each sub-area, the smaller the resistivity, the higher the current density through the corresponding sub-area, and the stronger the electric field strength, the sub-area corresponding to the plating rate of the grain can achieve the desired uniform plating thickness. It should be understood that the porosity pattern obtained in each sub-area and the plating pattern obtained in the corresponding sub-area according to the desired film distribution can be designed to be the same or different, as long as the porosity in the sub-area matches the plating rate of the corresponding sub-area in space, and can be designed as in FIG. 8(a) the pore diameters of the pores in each sub-area are the same, but the densities of the pores in each sub-area are different, or as in FIG. 8(b) the pore diameters of the pores in each sub-area are different, but the densities of the pores in each sub-area are the same, or as in FIG. 9 the pore diameters and densities of the pores in each sub-area are different. Only the embodiment in FIG. 9 is specifically described below, and the porosities of the sub-areas E1, E2, E3, and E4 in FIG. 9 are the same as the porosities of the corresponding sub-areas D1, D2, D3, and D4 in FIG. 8(a), i.e., porosities E1=D1, E2=D2, E3=D3, and E4=D4, so that the corresponding sub-areas in FIG. 9 can also match the sub-areas in FIG. 5, and the plating pattern obtained when the sub-areas in FIG. 8(a) correspond to the plating rate and the plating are uniform. It should be understood that the plating rate of the sub-area with the same porosity in the grain is the same, but the plating pattern in the matching sub-area can be different. As shown in FIG. 5, the plating rates of the sub-areas are the same as the plating rates of the corresponding sub-areas in FIG. 6, i.e., plating rates A1=F1, A2=F2, A3=F3, and A4=F4. The porosities of the sub-areas in FIG. 8(a) match the sub-areas in FIG. 5, and the porosities of the sub-areas in FIG. 8(a) also match the sub-areas in FIG. 6, but the plating patterns of the corresponding sub-areas A1 and F1, A2 and F2, A3 and F3, and A4 and F4 are not the same.In some other embodiments, to achieve different film thicknesses in different sub-zones of the substrate, the film deposition rate can be changed by changing the porosity of the corresponding sub-zone in the electric field control element, thereby changing the film thickness in the specific area of the substrate, so that the film in different sub-zones of the substrate is deposited according to the desired thickness. Here, the thickness of the substrate surface is not uniform, but according to the specific needs, the desired film thickness is deposited in the specific area. As shown in the embodiment of FIG. 5, to make the film thickness in the fourth film pattern sub-zone A4 the thickest in the grain, the porosity of the corresponding sub-zone D4 in the electric field control element is increased according to the increased film thickness in the above embodiment.

[0052] The porosity of each sub-zone of the electric field control element is changed by changing the size of the pores, the density of the pores, or a combination of the two. Therefore, the density and diameter of the pores in the same sub-zone can be designed to be the same or different according to the needs, which is not limited in the present application. Since the porosity of the electric field control element between adjacent sub-zones in the same area may be too different to affect the film thickness of the adjacent two sub-zones near the junction in the corresponding grain, the porosity near the junction between adjacent sub-zones is designed to be the same or similar under the condition that the porosity in each sub-zone is unchanged. In some embodiments, the porosity is similar when the porosity deviation is less than 20%, and further, the porosity deviation is less than 10%, which has less effect on the film thickness near the junction of the adjacent two sub-zones. Preferably, the porosity of adjacent sub-zones gradually changes towards the junction of adjacent two sub-zones, and the porosity near the junction is the same.

[0053] As shown in FIG. 4, the substrate can be square, and as shown in FIG. 5, the grains distributed on the substrate are also square. FIG. 7 illustrates an electric field control element which matches the substrate in FIG. 4. The electric field control element in FIG. 7 is similar to the substrate, including a plurality of rectangular regions 51 which match the size of the grains, and as shown in FIG. 8(a), each region 51 has a specific resistance pattern.

[0054] As shown in Fig. 10(a), the substrate can be circular, and the grains distributed on the substrate can be square (as shown in Fig. 10(b)) or circular (not shown). As shown in Fig. 11(a), the electric field control element 5 is similar to the substrate, and the outer contour is circular, and includes a plurality of rectangular regions 51 (as shown in Fig. 11(b)) or circular regions (not shown), which are matched with the size of the grains, and each region 51 has a specific resistance pattern. The design of the electric field control element has been described in the above embodiments, and will not be repeated here. The desired height of the plating pattern of the same substrate can be the same or different. If the same, the plating thickness of the pattern on the same substrate is uniform. In order to change the porosity of the electric field control element to adapt to the substrate of different desired patterns, the porosity of the electric field control element can be adjusted. As shown in Fig. 12, a specific shield 6 can be stacked on the electric field control element 5 to block the specific partial porosity on the electric field control element 5, and the corresponding porosity is selected to be opened or blocked during part of the time in the electroplating process to control the thickness of the corresponding pattern on the substrate. It should be understood that the change of the porosity of the ion electron element can also be realized by stacking a specific shield on the electric field control element to block the corresponding porosity, so that the electric field control element is not replaced when the porosity is changed, and the change of the corresponding porosity can also be realized by simply stacking a specific shield. The material of the shield can be selected according to the electric field control element.

[0055] In the electroplating process, the resistance of the mask between the two adjacent grains will affect the shape of the plating protrusion formed at the junction of the adjacent grains, such as causing the loss of the shape of the plating protrusion at the adjacent boundary line. Therefore, the present application is provided with a recess feature in the mask between the two adjacent grains to expose the seed layer, and a matching porosity is provided at the corresponding position of the electric field control element, so that the ion current flows through the porosity during electroplating and forms a plating film in the matched recess feature, thereby avoiding the loss of the shape of the plating protrusion at the adjacent boundary line.

[0056] In the present application, the porosity on the electric field control element is the same as or similar to the plating rate on the substrate, so that the plating on the substrate reaches the uniform desired thickness.

[0057] The above embodiments are only illustrative of the principles and effects of the present application, and are not intended to limit the present application. Any person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical thought disclosed in the present application should be covered by the claims of the present application.

Claims

1. An electric field control element for allowing ion current to pass through the electric field control element and flow to a substrate during electroplating of the substrate, the substrate comprising a plurality of grains and a plurality of recessed features located within each grain and used to form a plated film pattern within the substrate, characterized in that, The electric field control element is a plate structure, and a plurality of apertures are formed on the electric field control element. The aperture ratio of the electric field control element is positively correlated with the plating film ratio on the substrate, so that the plating film on the substrate reaches a desired thickness.

2. The electric field control element according to claim 1, characterized by Each of the crystal grains has a plurality of plating film pattern partitions obtained by partitioning according to the density of the plurality of recessed features. The electric field control element includes a plurality of regions, each of which corresponds to one of the plurality of crystal grains in size and position. Each of the regions is divided into a plurality of sub-regions, each of which corresponds to each of the plating film pattern partitions in space during electroplating. The aperture ratio of each of the sub-regions is positively correlated with the plating film ratio in the corresponding plating film pattern partition, so that the plating film on the substrate reaches a desired thickness.

3. The electric field control element according to claim 2, characterized by The sub-regions include an aperture pattern composed of a plurality of apertures, and the plating film pattern is configured to be different from the aperture pattern.

4. The electric field control element according to claim 2, characterized by The sub-regions have the same plating film ratio as the plating film ratio of the corresponding plating film pattern partition, but have different plating film patterns.

5. The electric field control element according to claim 2, wherein Each of the sub-regions changes to match the plating film ratio in the corresponding plating film pattern partition according to the size of the apertures, the density of the apertures, or a combination of both.

6. The electric field control element according to claim 2, wherein The aperture ratios of two adjacent sub-regions in the same region are the same or similar on both sides of the junction between the two adjacent sub-regions.

7. The electric field control element according to claim 6, characterized by The aperture ratio in each of the sub-regions gradually changes in the direction approaching the junction.

8. The electric field control element according to claim 2, characterized by A seed layer that can be plated during electroplating is provided between the two adjacent plating film pattern partitions corresponding to the two adjacent regions.

9. The electric field control element according to claim 1, characterized by The electric field control element includes a main body made of metal and an insulating coating covering the metal surface.

10. The electric field control element according to claim 1, characterized by The electric field control element further includes a shielding member for blocking the apertures to change the aperture ratio of the electric field control element.

11. The electric field control element according to claim 2, characterized by The substrate is square, the crystal grains in the substrate are square, the shape of the electric field control element is square matching the shape of the substrate, and the shape of the plurality of regions in the electric field control element is square matching the shape of the square crystal grains.

12. The electric field control element according to claim 2, characterized by The substrate is circular, the crystal grains in the substrate are circular or square, the shape of the electric field control element is circular matching the shape of the substrate, and the shape of the plurality of regions in the electric field control element is circular or square matching the shape of the crystal grains.

13. An electroplating apparatus characterized by comprising: A substrate holding member for holding and rotating a substrate, an electroplating cavity for storing an electroplating solution, and a diffusion plate installed in the electroplating cavity are provided. The diffusion plate includes a plurality of passages allowing the electroplating solution to pass through and an electric field control element connected to the substrate holding member. The electric field control element is any one of the electric field control elements described in claims 1-12.

14. The electroplating apparatus of claim 13, wherein The electric field control element is arranged below the substrate holding member, and a gap for filling the electroplating solution is provided between the substrate holding member and the electric field control element.

15. The electroplating apparatus of claim 14, wherein, The gap is 2-10 mm.

16. The electroplating apparatus of claim 13, wherein A gap is provided between the diffusion plate and the electric field control element.

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