Semiconductor device, and sensing apparatus comprisng semiconductor device

Abstract

Provided in the present disclosure is a semiconductor device. The semiconductor device comprises a first pixel, a second pixel and a third pixel, wherein the first pixel comprises a first SPAD unit, which is configured to sense light in a first wavelength range for depth measurement, the first SPAD unit comprising one or more SPADs; the second pixel comprises a second SPAD unit, which is configured to sense light in a second wavelength range, the second SPAD unit comprising one or more SPADs; and the third pixel comprises a third SPAD unit, which is configured to sense light in a third wavelength range, the third SPAD unit comprising one or more SPADs, and the third wavelength range being greater than the first wavelength range and the second wavelength range. The semiconductor device in the embodiments of the present disclosure can be used for measuring depth information, and can also be used for sensing other information of a surrounding environment, including but not limited to color information and light intensity information.

Description

Semiconductor device and sensing apparatus comprising the same

[0001] This application claims priority to Chinese Patent Application No. 202411391418.X, filed September 30, 2024, entitled “Semiconductor Device, Sensing Apparatus and Electronic Device,” Chinese Patent Application No. 202411998704.2, filed December 31, 2024, entitled “Semiconductor Device and Sensing Apparatus Comprising the Same,” Chinese Patent Application No. 202411998679.8, filed December 31, 2024, entitled “Semiconductor Device and Sensing Apparatus Comprising the Same,” Chinese Patent Application No. 202411998662.2, filed December 31, 2024, entitled “Sensing Apparatus,” the contents of which are incorporated by reference in their entirety in the present disclosure. TECHNICAL FIELD

[0002] The present disclosure relates to the field of photodetection, and in particular, to a semiconductor device and a sensing apparatus comprising the same. BACKGROUND

[0003] Sensing technology converts physical quantities, chemical quantities, or biological quantities in the environment into measurable signals, such as electrical signals, to perceive objects in the environment. The signals can be used as inputs for machines or devices, so that the machines or devices perform one or more functions such as measurement, analysis, recording, or control based on the signals.

[0004] In visual sensing technology, two-dimensional image data has been unable to meet the needs of visual sensing. The introduction of three-dimensional depth data can increase the richness of the environmental data provided by visual sensing technology, but the sensing efficiency or performance still needs to be improved.

[0005] Single Photon Avalanche Diode (SPAD) is a commonly used detector, which has advantages such as high sensitivity, high sampling rate, and high integration, and is commonly used as a photon detection device in laser radar to detect distance (e.g., depth) information of objects in the environment, but it is generally unable to obtain more types of environmental information.

[0006] SPAD can be used to detect the distance of objects in the environment by time of flight (ToF). The ToF-based ranging system requires the detector to have a relatively high time resolution and a certain spatial resolution. In order to realize the measurement of objects with different distances and different reflectivities, the light intensity received by the detector of the ToF-based ranging system varies in a relatively large range, so there is also a high requirement for the dynamic range of the detector.

[0007] The structured light system usually includes a projection unit and an image collector. The projection unit projects a preset light signal (for example, a pattern of dot array or stripe) onto the surface of an object and a background, and the image collector collects the pattern of the surface of the object and the background. The position or depth information of the object is calculated according to the change of the light signal caused by the object. The existing structured light system requires the image collector to have a high spatial resolution. By capturing the structured light pattern projected by the projection unit at a high resolution, the structured light pattern projected on the surface of the object is accurately analyzed, so as to realize high-precision measurement. Unlike the system based on ToF ranging, the structured light system usually does not rely on time measurement, so the receiving end of the structured light system has a low requirement on time resolution. The image collector of the commonly used structured light system includes a CMOS, a CCD and the like.

[0008] The ToF ranging system usually adopts a SPAD, a SiPM and an APD, and the structured light system usually adopts a CMOS and a CCD. The sensing devices used by the two systems are different. There is a lack of an integrated sensing device that combines the advantages of both the ToF ranging system and the structured light system in the prior art.

[0009] The SPAD can also be used to sense ambient light. The working parameters of the SPAD are related to the reverse bias voltage applied across the SPAD. For example, when the reverse bias voltage across the SPAD is increased, the photon detection efficiency (PDE) and the time resolution of the SPAD will increase, but the power consumption and the heat generation of the SPAD will also increase.

[0010] Therefore, how to adjust the overall power consumption and heat generation while meeting the working performance requirements of the SPAD is a problem that needs to be solved in the industry. SUMMARY

[0011] In view of one or more defects in the prior art, the present disclosure provides a semiconductor device including a first pixel, a second pixel and a third pixel. The first pixel includes a first SPAD unit configured to sense light in a first wavelength range to measure depth, wherein the first SPAD unit includes one or more SPADs. The second pixel includes a second SPAD unit configured to sense light in a second wavelength range, wherein the second SPAD unit includes one or more SPADs. The third pixel includes a third SPAD unit configured to sense light in a third wavelength range, wherein the third SPAD unit includes one or more SPADs. The third wavelength range is greater than the first wavelength range, and the third wavelength range is greater than the second wavelength range.

[0012] Optionally, the first pixel further comprises a first filter disposed on a side of the first SPAD cell, the first filter configured to allow light of the first wavelength range to pass through and be incident on the first SPAD cell.

[0013] Optionally, the second pixel comprises a second filter disposed on a side of the second SPAD cell, the second filter configured to allow light of a second wavelength range to pass through and be incident on the second SPAD cell.

[0014] Optionally, the third pixel comprises a third filter disposed on a side of the third SPAD cell, the third filter configured to allow light of a third wavelength range to pass through and be incident on the third SPAD cell.

[0015] Optionally, the third pixel does not comprise a filter.

[0016] Optionally, the first SPAD cell of the first pixel, the second SPAD cell of the second pixel, and the third SPAD cell of the third pixel are formed on a same circuit layer.

[0017] Optionally, the semiconductor device comprises a plurality of first pixels, a plurality of second pixels, and a plurality of third pixels. Among the plurality of first pixels, the plurality of second pixels, and the plurality of third pixels, a proportion of the plurality of third pixels is greater than 30% and less than or equal to 90%.

[0018] Optionally, the semiconductor device comprises a plurality of first pixels, a plurality of second pixels, and a plurality of third pixels. Among the plurality of first pixels, the plurality of second pixels, and the plurality of third pixels, a proportion of the plurality of third pixels is greater than 50% and less than or equal to 70%.

[0019] Optionally, the semiconductor device comprises a plurality of third pixels, the semiconductor device comprises a first region and a second region, the first region is closer to a center of the semiconductor device than the second region, and a proportion of the third pixels in the second region is higher than a proportion of the third pixels in the first region.

[0020] Optionally, the semiconductor device comprises a plurality of first pixels, a plurality of second pixels, and a plurality of third pixels, and the plurality of first pixels and the plurality of second pixels are uniformly dispersed in the plurality of third pixels.

[0021] Optionally, the first pixel is surrounded by 4-9 third pixels; or the second pixel is surrounded by 4-9 third pixels.

[0022] Optionally, the first pixel is surrounded by 6-8 third pixels; or the second pixel is surrounded by 6-8 third pixels.

[0023] Optionally, the semiconductor device comprises a plurality of second pixels, the plurality of second pixels forming a second pixel cluster, wherein the second pixel cluster is surrounded by at least 6 third pixels.

[0024] Optionally, the semiconductor device comprises a plurality of first pixels, the plurality of first pixels forming a first pixel cluster, wherein the first pixel is surrounded by at least 6 third pixels.

[0025] Optionally, the second wavelength range comprises a first sub-band, a second sub-band or a third sub-band, the second pixel comprises any one of a first sub-pixel, a second sub-pixel and a third sub-pixel, wherein the first sub-pixel comprises a first sub-filter configured to allow light of the first sub-band to pass through; the second sub-pixel comprises a second sub-filter configured to allow light of the second sub-band to pass through; the third sub-pixel comprises a third sub-filter configured to allow light of the third sub-band to pass through.

[0026] Optionally, the first SPAD cell is formed on a first circuit layer, the second SPAD cell and the third SPAD cell are formed on a second circuit layer, wherein the second circuit layer is stacked on the first circuit layer, wherein a projection of the first SPAD cell on a plane perpendicular to the stacking direction overlaps at least partially with a projection of the second SPAD cell and the third SPAD cell on the plane.

[0027] Optionally, the second pixel comprises a second filter disposed on a side of the second SPAD cell, the second filter configured to allow light of the first wavelength range and the second wavelength range to pass through.

[0028] Optionally, the first SPAD cell and the second SPAD cell comprise a shared SPAD.

[0029] Optionally, a filter is disposed on a side of the shared SPAD, the filter configured to allow light of the first wavelength range and light of the second wavelength range to pass through, the shared SPAD cell configured to sense light of the first wavelength range in a first time period and sense light of the second wavelength range in a second time period.

[0030] Optionally, the first SPAD cell and the third SPAD cell comprise a shared SPAD.

[0031] Optionally, a filter is disposed on a side of the shared SPAD, the filter configured to allow light of the first wavelength range and light of the third wavelength range to pass through, the shared SPAD cell configured to sense light of the first wavelength range in a third time period and sense light of the third wavelength range in a fourth time period.

[0032] Optionally, the third wavelength range at least partially overlaps with a wavelength range of visible light.

[0033] The present disclosure also provides a sensing device, comprising: a semiconductor device as described above and a data processing device configured to receive signals output by the first pixel, the second pixel and the third pixel of the semiconductor device to determine information of a surrounding environment.

[0034] Optionally, the data processing device is configured to determine color information based at least on the signal output by the second pixel and determine light intensity information based at least on the signal output by the third pixel.

[0035] Optionally, the sensing device further comprises an emitter, the emitting unit is configured to emit a light beam, a wavelength of the light beam is within the first wavelength range, and the data processing device is configured to determine depth information according to a time when the light beam is emitted and a time when the first pixel receives light of the first wavelength range.

[0036] Optionally, the data processing device is configured to determine color information of the first pixel and the third pixel based at least on the signal output by the second pixel.

[0037] Optionally, the data processing device is configured to determine brightness information of the second pixel based at least on the signal output by the third pixel.

[0038] Optionally, the data processing device is configured to determine color information of the first pixel based at least on the signals output by the second pixel and the third pixel.

[0039] Optionally, the data processing device is configured to determine color information of the first pixel and the third pixel based at least on the signal output by the second pixel and the signal output by the first pixel.

[0040] Optionally, the data processing device is configured to generate image data according to the signal output by the second pixel, color information of the first pixel and color information of the third pixel.

[0041] Optionally, the data processing device is configured to generate image data in a macro-pixel, the macro-pixel comprises at least two of the first pixel, the second pixel and the third pixel, the data processing device is configured to determine depth information of the macro-pixel according to the signal output by the first pixel, determine color information of the macro-pixel according to the signal output by the second pixel, and determine brightness information of the macro-pixel according to the signal output by the third pixel.

[0042] Optionally, the sensing device comprises a plurality of macro-pixels, a center distance between adjacent macro-pixels is less than a size of the macro-pixel.

[0043] Through the semiconductor device of the embodiment of the present disclosure, in addition to being able to be used for measuring depth information, other information of the surrounding environment can also be sensed, including but not limited to color information, light intensity information, etc.

[0044] The present disclosure provides a semiconductor device, comprising a first pixel and a second pixel. The first pixel comprises a first SPAD unit configured to sense light of a first wavelength range to determine a time of flight, the first SPAD unit comprising one or more SPADs. The second pixel comprises a second SPAD unit configured to sense light of a second wavelength range to determine a structured light pattern, the second SPAD unit comprising one or more SPADs.

[0045] Optionally, the first pixel further comprises a first optical filter disposed on one side of the first SPAD unit, the first optical filter being configured to allow light of the first wavelength range to pass through and be incident on the first SPAD unit.

[0046] Optionally, the second pixel comprises a second optical filter disposed on one side of the second SPAD unit, the second optical filter being configured to allow light of the second wavelength range to pass through and be incident on the second SPAD unit.

[0047] Optionally, the wavelength of the structured light source is within the second wavelength range.

[0048] Optionally, the second wavelength range comprises a first sub-band, a second sub-band or a third sub-band, and the second pixel comprises any one of a first sub-pixel, a second sub-pixel and a third sub-pixel, wherein the first sub-pixel comprises a first sub-filter configured to allow light of the first sub-band to pass through; the second sub-pixel comprises a second sub-filter configured to allow light of the second sub-band to pass through; and the third sub-pixel comprises a third sub-filter configured to allow light of the third sub-band to pass through.

[0049] Optionally, the semiconductor device further comprises a third pixel configured to sense light of a third wavelength range, the third wavelength range being greater than the second wavelength range and the first wavelength range.

[0050] Optionally, the second pixel does not comprise an optical filter.

[0051] Optionally, the second wavelength range is greater than the first wavelength range, and the semiconductor device comprises a plurality of first pixels and a plurality of second pixels; among the plurality of first pixels and the plurality of second pixels, the proportion of the second pixels is greater than or equal to 50% and less than or equal to 90%.

[0052] Optionally, the semiconductor device comprises a plurality of first pixels and a plurality of second pixels; the plurality of first pixels are uniformly dispersed in the plurality of second pixels.

[0053] Optionally, the semiconductor device comprises a plurality of second pixels; the first pixel is surrounded by 4-9 second pixels.

[0054] Optionally, the semiconductor device comprises a plurality of first pixels, the plurality of first pixels form a first pixel cluster, wherein the first pixel cluster is surrounded by at least eight second pixels.

[0055] Optionally, the first SPAD cell and the second SPAD cell are formed on the same circuit layer.

[0056] Optionally, the first SPAD cell is formed on a first circuit layer, and the second SPAD cell is formed on a second circuit layer, wherein the second circuit layer is stacked on the first circuit layer, and a projection of the first SPAD cell and the second SPAD cell on a plane perpendicular to the stacking direction at least partially overlaps.

[0057] Optionally, the semiconductor device further comprises a third pixel, the third pixel comprises a third SPAD cell configured to sense light in a third wavelength range, wherein the third SPAD cell comprises one or more SPADs.

[0058] Optionally, the first SPAD cell, the second SPAD cell, and the third SPAD cell are formed on the same circuit layer; or the first SPAD cell is formed on a first circuit layer, and the second SPAD cell and the third SPAD cell are formed on a second circuit layer, wherein the second circuit layer is stacked on the first circuit layer, and a projection of the first SPAD cell and at least one of the second SPAD cell and the third SPAD cell on a plane perpendicular to the stacking direction at least partially overlaps.

[0059] Optionally, the third wavelength range comprises a first sub-waveband, a second sub-waveband, or a third sub-waveband, the third pixel comprises any one of a fourth sub-pixel, a fifth sub-pixel, and a sixth sub-pixel, wherein the fourth sub-pixel comprises a fourth sub-filter configured to allow light in the first sub-waveband to pass through; the fifth sub-pixel comprises a fifth sub-filter configured to allow light in the second sub-waveband to pass through; and the sixth sub-pixel comprises a sixth sub-filter configured to allow light in the third sub-waveband to pass through.

[0060] Optionally, the third wavelength range is greater than the second wavelength range and the first wavelength range.

[0061] The present disclosure also provides a sensing device, comprising: a semiconductor device as described above and a processing device. The processing device is configured to receive signals output by the first pixel and the second pixel of the semiconductor device to determine information of a surrounding environment.

[0062] Optionally, the processing device is configured to determine a time of flight according to the signals output by the first pixel and determine a structured light pattern according to the signals output by the second pixel.

[0063] Optionally, the sensing device further comprises a first light source configured to emit a first light beam, the wavelength of the first light beam being within the first wavelength range, and a second light source configured to emit a second light beam, the wavelength of the second light beam being within the second wavelength range, wherein the processing device is configured to determine the time of flight based on a time of emission of the first light beam and a time of reception of light within the first wavelength range by the first pixel, and determine the structured light pattern according to the signals output by the second pixel.

[0064] Optionally, the sensing device further comprises a third light source configured to emit the first light beam and the second light beam, the wavelength of the first light beam being within the first wavelength range, and the wavelength of the second light beam being within the second wavelength range, wherein the processing device is configured to determine the time of flight based on a time of emission of the first light beam and a time of reception of light within the first wavelength range by the first pixel, and determine the structured light pattern according to the signals output by the second pixel.

[0065] Optionally, the difference between the wavelength of the first light beam and the wavelength of the second light beam is within a preset range.

[0066] Optionally, when the second light source or the third light source is configured to project a structured light to a surface of an object, the processing device is configured to determine the structured light pattern according to the signals output by the first pixel and the second pixel.

[0067] Optionally, the difference between the wavelength of the first light beam and the wavelength of the second light beam is greater than a preset threshold.

[0068] Optionally, the first pixel and the second pixel form a macro-pixel.

[0069] Optionally, the macro-pixel is configured to switch between a first mode and a second mode, wherein in the first mode, the processing device determines a depth value based on at least the output signal of the first pixel of the macro-pixel, and in the second mode, the processing device determines a depth value based on at least the second pixel of the macro-pixel.

[0070] Optionally, the processing device is configured to switch the macro-pixel to the second mode when a depth value determined based at least on the output signal of the first pixel is below a first threshold.

[0071] Optionally, the processing device is configured to switch the macro-pixel to the first mode when a depth value determined based at least on the output signal of the second pixel is greater than a second threshold.

[0072] Optionally, the sensing device is configured to switch between the first mode and the second mode, wherein the processing device determines a depth value based at least on the output signal of the first pixel; in the second mode, the processing device determines a depth value based at least on the second pixel.

[0073] Optionally, the processing device is configured to switch the macro-pixel to the second mode when a depth value determined based at least on the output signal of the first pixel is below a first threshold.

[0074] Optionally, the processing device is configured to switch the macro-pixel to the first mode when a depth value determined based at least on the output signal of the second pixel is greater than a second threshold.

[0075] By embodiments of the present disclosure, an integrated sensing device is provided, which can be used for both ToF ranging and structured light sensing, combining the advantages of ToF ranging system and structured light system.

[0076] The present disclosure provides a sensing device, comprising:

[0077] a first pixel comprising a first SPAD cell configured to sense light in a first wavelength range for measuring depth, wherein the first SPAD cell comprises one or more SPADs;

[0078] a second pixel comprising a second SPAD cell configured to sense light in a second wavelength range, wherein the second SPAD cell comprises one or more SPADs; and

[0079] a voltage source coupled to the first SPAD cell and the second SPAD cell and configured to apply a first bias voltage to the SPADs of the first SPAD cell and a second bias voltage to the SPADs of the second SPAD cell,

[0080] wherein the first bias voltage is different from the second bias voltage.

[0081] Optionally, the first pixel further comprises a first optical filter disposed on a side of the first SPAD cell, the first optical filter configured to allow light in the first wavelength range to pass through and be incident on the first SPAD cell.

[0082] Optionally, the second pixel comprises a second filter disposed on a side of the second SPAD cell, the second filter configured to allow light of a second wavelength range to pass and be incident on the second SPAD cell.

[0083] Optionally, the voltage source comprises a first voltage source, a second voltage source, a third voltage source and a fourth voltage source, wherein the first end of the SPAD of the first SPAD cell is coupled to the first voltage source, the second end of the SPAD of the first SPAD cell is coupled to the second voltage source, the first end of the SPAD of the second SPAD cell is coupled to the third voltage source, and the second end of the SPAD of the second SPAD cell is coupled to the fourth voltage source.

[0084] Optionally, the first bias voltage being different from the second bias voltage comprises at least one of:

[0085] the voltage of the first voltage source being different from the voltage of the third voltage source;

[0086] the voltage of the second voltage source being different from the voltage of the fourth voltage source.

[0087] Optionally, the sensing device comprises a plurality of first pixels and a plurality of second pixels, wherein the plurality of first pixels are uniformly dispersed in the plurality of second pixels.

[0088] Optionally, the sensing device comprises a plurality of first pixels and a plurality of second pixels, wherein the first pixel has 4-8 second pixels around it, or the second pixel has 2-5 first pixels around it.

[0089] Optionally, the first SPAD cell of the first pixel and the second SPAD cell of the second pixel are formed on the same circuit layer.

[0090] Optionally, the second wavelength range comprises a first sub-waveband, a second sub-waveband or a third sub-waveband, the second pixel comprises any one of a first sub-pixel, a second sub-pixel and a third sub-pixel, wherein the first sub-pixel comprises a first sub-filter configured to allow light of the first sub-waveband to pass; the second sub-pixel comprises a second sub-filter configured to allow light of the second sub-waveband to pass; and the third sub-pixel comprises a third sub-filter configured to allow light of the third sub-waveband to pass.

[0091] Optionally, the second bias voltage applied to the first sub-pixel, the second bias voltage applied to the second sub-pixel and the third bias voltage applied to the third sub-pixel are different from each other.

[0092] Optionally, the second wavelength range is the first sub-wavelength range, the second sub-wavelength range, or the third sub-wavelength range.

[0093] Optionally, the first bias voltage is higher than the second bias voltage.

[0094] Optionally, the first bias voltage is lower than the second bias voltage.

[0095] Optionally, the sensing device further comprises a controller configured to adjust at least one of the first bias voltage or the second bias voltage according to at least one of the measurement parameter or the environmental parameter.

[0096] Optionally, the voltage source comprises a first sub-voltage source and a second sub-voltage source, wherein the SPAD of the first SPAD cell is coupled to the first sub-voltage source through a first switch, the SPAD of the first SPAD cell is coupled to the second sub-voltage source through a second switch, and the controller is configured to determine the turn-on and turn-off of the first switch and the second switch according to at least one of the measurement parameter or the environmental parameter.

[0097] Optionally, the voltage source comprises a third sub-voltage source and a fourth sub-voltage source, wherein the SPAD of the second SPAD cell is coupled to the third sub-voltage source through a third switch, the SPAD of the second SPAD cell is coupled to the fourth sub-voltage source through a fourth switch, and the controller is configured to determine the turn-on and turn-off of the third switch and the fourth switch according to at least one of the measurement parameter or the environmental parameter.

[0098] Optionally, the voltage source comprises a third sub-voltage source, wherein the SPAD of the second SPAD cell is coupled to the third sub-voltage source through a third switch, the SPAD of the third SPAD cell is coupled to the second sub-voltage source through a fourth switch, and the controller is configured to determine the turn-on and turn-off of the third switch and the fourth switch according to at least one of the measurement parameter or the environmental parameter.

[0099] Optionally, the environmental parameter comprises an ambient light intensity, and the controller determines the ambient light intensity based on the signal output by the second SPAD cell.

[0100] Optionally, the sensing device further comprises a processor configured to determine information of the surrounding environment based on the signals output by the first pixel and the second pixel.

[0101] Optionally, the processor is configured to determine color information based on at least the signal output by the second pixel.

[0102] Optionally, the sensing device further comprises a transmitter configured to emit a light beam, the light beam having a wavelength in the first wavelength range, the processor is configured to determine the depth information according to a time of emission of the light beam and a time of reception of the light in the first wavelength range by the first pixel.

[0103] The present disclosure also provides a sensing device, comprising:

[0104] a third pixel comprising a third SPAD cell, wherein the third SPAD cell comprises one or more SPADs; and

[0105] a voltage source coupled to the third SPAD cell and configured to apply a third bias voltage or a fourth bias voltage to the SPADs of the third SPAD cell to cause the third pixel to operate in a first mode or a second mode, wherein in the first mode, the third SPAD cell senses light in a first wavelength range to measure depth, and in the second mode, the third SPAD cell senses light in a second wavelength range to generate a pattern, wherein the third bias voltage is different from the fourth bias voltage.

[0106] Through the sensing device comprising SPADs of the embodiments of the present disclosure, in addition to being able to measure depth information through the first pixel, other information of the surrounding environment, including but not limited to color information, light intensity information, etc., can also be sensed through the second pixel, and by making the first bias voltage different from the second bias voltage, the overall power consumption and heat of the sensing device can be effectively controlled under the premise of meeting the measurement requirements.

[0107] The present disclosure provides a semiconductor device, comprising: a first circuit layer comprising a first photodetection region; a second circuit layer located above the first circuit layer, comprising a second photodetection region; a filter layer located above the second circuit layer, comprising a filter region; wherein the filter region is configured to transmit light of a first waveband and light of a second waveband in incident light; the second photodetection region is configured to transmit the light of the first waveband and convert the light of the second waveband into a second electrical signal; the first photodetection region is configured to convert the light of the first waveband into a first electrical signal; the first electrical signal is used for depth measurement, and the second electrical signal is used for measurement of light intensity of the second waveband.

[0108] The present disclosure can integrate a first circuit layer, a second circuit layer and a filter layer in one semiconductor device. The first circuit layer integrates a first photoelectric detection region, which can be used for photoelectric conversion to convert light of a first waveband into a first electrical signal for depth measurement. The second circuit layer integrates a second photoelectric detection region, which can be used for photoelectric conversion to convert light of a second waveband into a second electrical signal for measurement of light intensity of the second waveband. The filter layer is integrated above the second circuit layer, which can filter out light of non-target waveband in incident light so that light of a target waveband can reach the first circuit layer and the second circuit layer. In this way, one semiconductor device can be used for simultaneous light intensity sensing and depth sensing of incident light, which has a high degree of integration, is conducive to miniaturization of a sensing device, and has a low cost. In addition, the above semiconductor device is equivalent to using a single sensing system to realize multiple sensing functions, for example, the semiconductor device can simultaneously realize sensing of light intensity and depth, which can reduce the requirements for spatial calibration and time synchronization in subsequent data fusion process, thereby reducing the complexity of subsequent data processing, improving sensing efficiency, and having better sensing performance. In addition, compared with a three-dimensional camera of a dual-sensor system, the semiconductor device used in a sensing device can reduce the number of devices, simplify the installation of devices, and thereby save the manufacturing cost of the sensing device.

[0109] Optionally, the light of the first waveband includes short-wave infrared light; and the light of the second waveband includes light of a target sub-waveband in a visible light waveband.

[0110] Optionally, the second photoelectric detection region includes a silicon-based detector.

[0111] Optionally, the filter layer includes an array of filter regions, the second circuit layer includes an array of second photoelectric detection regions, and the first circuit layer includes an array of first photoelectric detection regions; the filter region is one of the array of filter regions; the second photoelectric detection region is one of the array of second photoelectric detection regions; the first photoelectric detection region is one of the array of first photoelectric detection regions; and the filter region, the second photoelectric detection region, and the first photoelectric detection region are arranged in a stacking manner in a direction perpendicular to a substrate of the semiconductor device.

[0112] Optionally, the second waveband of light includes a first sub-waveband of light, a second sub-waveband of light, and a third sub-waveband of light; the array of light filtering regions includes a first light filtering region, a second light filtering region, and a third light filtering region, the first light filtering region is configured to transmit the first sub-waveband of light, the second light filtering region is configured to transmit the second sub-waveband of light, and the third light filtering region is configured to transmit the third sub-waveband of light; the array of second photodetecting regions includes a first photodetector, a second photodetector, and a third photodetector, wherein the first photodetector is configured to convert the first sub-waveband of light into a first sub-signal, the second photodetector is configured to convert the second sub-waveband of light into a second sub-signal, and the third photodetector is configured to convert the third sub-waveband of light into a third sub-signal; the second electrical signal includes the first sub-signal, the second sub-signal, and the third sub-signal.

[0113] Optionally, in the array of light filtering regions, a ratio of a number of the first light filtering regions, a number of the second light filtering regions, and a number of the third light filtering regions includes 1:2:1, or 2:1:1.

[0114] Optionally, the light filtering regions and the array of second photodetecting regions are aligned in a direction perpendicular to a substrate of the semiconductor device.

[0115] Optionally, the first photodetecting regions and the second photodetecting regions are aligned in a direction perpendicular to a substrate of the semiconductor device.

[0116] Optionally, the semiconductor device further includes a third circuit layer including an integrated circuit, the integrated circuit is configured to receive the first electrical signal and the second electrical signal, determine the sensing data based on the first electrical signal and the second electrical signal; wherein the first circuit layer is located above the third circuit layer; the third circuit layer is electrically connected with the first circuit layer and the second circuit layer.

[0117] Optionally, the integrated circuit includes a light intensity determination circuit configured to determine light intensity data based on the first electrical signal; a depth determination circuit configured to determine depth data based on the second electrical signal; a processing circuit configured to determine the sensing data based on the light intensity data and the depth data; and an interface circuit configured to output the sensing data.

[0118] Optionally, the integrated circuit is configured to receive the first electrical signal and the second electrical signal in a unit of pixel, in a unit of pixel group, or in a unit of pixel cluster, wherein a pixel corresponds to a pixel structure, the pixel structure includes the array of light filtering regions, the array of second photodetecting regions, and the array of first photodetecting regions in a corresponding position; a pixel group includes pixels corresponding to pixel structures in a same column or a same row; a pixel cluster includes pixels corresponding to pixel structures in multiple columns or multiple rows.

[0119] Optionally, the integrated circuit is configured to determine point cloud data with color intensity information based on the first electrical signal and the second electrical signal.

[0120] Optionally, the semiconductor device further comprises a band-stop filter layer above the first circuit layer, configured to filter out light of the first infrared waveband and to transmit short-wave infrared light.

[0121] Optionally, the first infrared waveband comprises a near-infrared waveband.

[0122] The present disclosure provides a sensing device comprising the semiconductor device as provided in the first aspect above.

[0123] Optionally, the sensing device further comprises a band-stop filter configured to filter out light of the first infrared waveband and to transmit short-wave infrared light.

[0124] Optionally, the first infrared waveband comprises a near-infrared waveband.

[0125] In a third aspect, the present disclosure provides an electronic device comprising the sensing device as provided in the second aspect above. BRIEF DESCRIPTION OF DRAWINGS

[0126] The accompanying drawings are included to provide a further understanding of the present disclosure and are incorporated in and constitute a part of the specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the present disclosure, but do not limit the present disclosure.

[0127] FIG. 1 shows a schematic diagram of an exemplary semiconductor device, consistent with some embodiments of the present disclosure.

[0128] FIG. 2 shows a schematic diagram of an exemplary semiconductor device, consistent with some embodiments of the present disclosure.

[0129] FIG. 3 shows a schematic diagram of an exemplary semiconductor device, consistent with some embodiments of the present disclosure.

[0130] FIG. 4 shows an exemplary semiconductor device, consistent with some embodiments of the present disclosure.

[0131] FIG. 5 shows an exemplary semiconductor device, consistent with some embodiments of the present disclosure.

[0132] FIG. 6 shows an exemplary semiconductor device, consistent with some embodiments of the present disclosure.

[0133] FIG. 7 shows an exemplary semiconductor device, consistent with some embodiments of the present disclosure.

[0134] FIG. 8 shows an exemplary semiconductor device, consistent with some embodiments of the present disclosure.

[0135] FIGS. 9A and 9B show an exemplary semiconductor device, consistent with some embodiments of the present disclosure.

[0136] FIG. 10A shows an expanded view of an exemplary semiconductor device, consistent with some embodiments of the present disclosure.

[0137] FIG. 10B illustrates a side view of a portion of SPAD cells in a semiconductor device.

[0138] FIG. 11 illustrates a schematic diagram of a first SPAD cell sharing a SPAD with a second SPAD cell, consistent with some embodiments of the present disclosure.

[0139] FIG. 12 illustrates an example sensing device, consistent with some embodiments of the present disclosure.

[0140] FIG. 13 illustrates an example sensing device, consistent with some embodiments of the present disclosure.

[0141] FIG. 14 illustrates an arrangement of macro-pixels, consistent with some embodiments of the present disclosure.

[0142] FIG. 15 illustrates a schematic diagram of an example semiconductor device, consistent with some embodiments of the present disclosure.

[0143] FIG. 16 illustrates a schematic diagram of an example semiconductor device, consistent with some embodiments of the present disclosure.

[0144] FIG. 17 illustrates a schematic diagram of an example semiconductor device, consistent with some embodiments of the present disclosure.

[0145] FIG. 18A illustrates a schematic diagram of an example semiconductor device, consistent with some embodiments of the present disclosure.

[0146] FIG. 18B illustrates a schematic diagram of an arrangement of a first pixel, a second pixel, and a third pixel in a semiconductor device, consistent with some embodiments of the present disclosure.

[0147] FIG. 19 illustrates a schematic diagram of an example semiconductor device, consistent with some embodiments of the present disclosure.

[0148] FIG. 20 illustrates a schematic diagram of an example semiconductor device, consistent with some embodiments of the present disclosure.

[0149] FIG. 21 illustrates a schematic diagram of an example semiconductor device, consistent with some embodiments of the present disclosure.

[0150] FIG. 22A illustrates an expanded view of an example semiconductor device, consistent with some embodiments of the present disclosure.

[0151] FIG. 22B illustrates a side view of a portion of SPAD cells in the semiconductor device of FIG. 22A.

[0152] FIG. 23 illustrates a schematic diagram of an example 900, consistent with some embodiments of the present disclosure.

[0153] FIG. 24 illustrates a side view of a portion of SPAD cells in an exemplary semiconductor device, consistent with some embodiments of the present disclosure.

[0154] FIG. 25 illustrates an exemplary sensing device, consistent with some embodiments of the present disclosure.

[0155] FIG. 26 illustrates an exemplary sensing device, consistent with some embodiments of the present disclosure.

[0156] FIG. 27 illustrates an exemplary sensing device, consistent with some embodiments of the present disclosure.

[0157] FIG. 28 illustrates an arrangement of exemplary macro-pixels, consistent with some embodiments of the present disclosure.

[0158] FIG. 29A illustrates a schematic diagram of an exemplary sensing device, consistent with some embodiments of the present disclosure.

[0159] FIG. 29B illustrates a schematic diagram of a first pixel and a second pixel in a sensing device.

[0160] FIG. 30 illustrates a schematic diagram of an exemplary sensing device, consistent with some embodiments of the present disclosure.

[0161] FIG. 31 illustrates a schematic diagram of an exemplary sensing device, consistent with some embodiments of the present disclosure.

[0162] FIG. 32 illustrates a schematic diagram of an exemplary sensing device, consistent with some embodiments of the present disclosure.

[0163] FIGS. 33A and 33B illustrate a schematic diagram of an exemplary sensing device, consistent with some embodiments of the present disclosure.

[0164] FIG. 34A illustrates an expanded view of an exemplary sensing device, consistent with some embodiments of the present disclosure.

[0165] FIG. 34B illustrates a side view of a portion of SPAD cells in the sensing device of FIG. 34A.

[0166] FIG. 35 illustrates a schematic diagram of an exemplary sensing device, consistent with some embodiments of the present disclosure.

[0167] FIG. 36 illustrates a schematic diagram of an exemplary sensing device, consistent with some embodiments of the present disclosure.

[0168] FIGS. 37A and 37B illustrate a schematic diagram of an exemplary sensing device, consistent with some embodiments of the present disclosure.

[0169] FIG. 38 illustrates a schematic diagram of an exemplary sensing device, consistent with some embodiments of the present disclosure.

[0170] FIG. 39 shows a schematic diagram of an exemplary sensing device, consistent with some embodiments of the present disclosure.

[0171] FIG. 40 shows an exemplary diagram of a structure of a semiconductor device, consistent with some embodiments of the present disclosure.

[0172] FIG. 41 shows an exemplary diagram of a structure of another semiconductor device, consistent with some embodiments of the present disclosure.

[0173] FIG. 42 shows an exemplary diagram of a structure of an integrated circuit, consistent with some embodiments of the present disclosure.

[0174] FIG. 43 shows an exemplary diagram of a structure of another integrated circuit, consistent with some embodiments of the present disclosure.

[0175] FIG. 44 shows an exemplary diagram of a readout scheme, consistent with some embodiments of the present disclosure.

[0176] FIG. 45 shows an exemplary diagram of another readout scheme, consistent with some embodiments of the present disclosure.

[0177] FIG. 46 shows an exemplary diagram of yet another readout scheme, consistent with some embodiments of the present disclosure. DETAILED DESCRIPTION

[0178] In the following description, certain specific examples will be described in simple terms. As those skilled in the art will appreciate, the described examples can be modified in various different ways without departing from the scope of the present disclosure. Accordingly, the drawings and description are to be regarded as illustrative in nature and not restrictive.

[0179] In the description of the present disclosure, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are merely used for convenience in describing the present disclosure and simplifying the description, and are not intended to indicate or imply that a referred device or element must have a particular orientation, be constructed and operated in a particular orientation, and thus cannot be understood as limiting the present disclosure. In addition, the terms "first", "second", are used only for the purpose of description, and cannot be understood as indicating or implying relative importance or implying an indication of the number of the technical features indicated. Therefore, the features defined as "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "a plurality of" is two or more, unless otherwise specifically limited.

[0180] In the description of the disclosure, it should be explained that, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connection" should be understood in a broad sense, for example, it can be fixed connection, or detachable connection, or integral connection; it can be mechanical connection, or electrical connection or can communicate with each other; it can be direct connection, or indirect connection through intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the disclosure can be understood according to the specific circumstances.

[0181] In the disclosure, unless otherwise explicitly specified and limited, the first feature is "on" or "under" the second feature, which can include that the first and second features are in direct contact, or the first and second features are not in direct contact but are in contact through another feature between them. Moreover, the first feature "on", "above" and "over" the second feature includes that the first feature is directly above and obliquely above the second feature, or only indicates that the first feature is higher than the second feature in horizontal height. The first feature "under", "below" and "under" the second feature includes that the first feature is directly below and obliquely below the second feature, or only indicates that the first feature is lower than the second feature in horizontal height.

[0182] In the disclosure, the term "or" and "and / or" describes the relationship between the related objects, and indicates a non-exclusive inclusion. For example, "A and / or B" and "A or B" can include: only "A", only "B", and "A" and "B" exist at the same time, where "A" and "B" can be singular or plural. For another example, "A, B and / or C" and "A, B or C" can include: only "A", only "B", only "C", "A" and "B" exist at the same time, "A" and "C" exist at the same time, "B" and "C" exist at the same time, and "A", "B" and "C" exist at the same time, where "A", "B" and "C" can be singular or plural. In addition, the symbol " / " in the disclosure indicates that there is an "or" relationship between the related objects before and after the symbol. In the disclosure, the term "at least one A or B" has the same meaning as "A or B" described above. The term "at least one A, B or C" has the same meaning as "A, B or C" described above.

[0183] The disclosure below provides many different embodiments or examples for implementing different structures of the disclosure. For the purpose of simplicity, the description below of a particular embodiment or example refers to the use of the words "example", "implementation", or "exemplary" to describe different features or aspects of that embodiment or example. This is used merely for purposes of distinguishing one or more embodiments or examples of the disclosure from another, rather than to portray each individual embodiment in a separate kingdom of embodiments and / or settings. The disclosure is not to be limited in scope or spirit to any of the embodiments or examples described below. Furthermore, many of the components and / or settings described below can be used in a variety of contexts, according to the principles of the present disclosure. In addition, the disclosure provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize that other processes can be applied and / or other materials used without departing from the teachings of the present disclosure.

[0184] Embodiments of the present disclosure are described herein with reference to the drawings, which are intended to be illustrative only and not limiting of the present disclosure. The following detailed description is presented in connection with these drawings.

[0185] According to an aspect of the present disclosure, some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a first pixel, a second pixel, and a third pixel. The first pixel includes a first SPAD cell that senses light in a first wavelength range to measure depth, the first SPAD cell including one or more SPADs. The second pixel includes a second SPAD cell that senses light in a second wavelength range, the second SPAD cell including one or more SPADs. The third pixel includes a third SPAD cell that senses light in a third wavelength range, the third SPAD cell including one or more SPADs. The third wavelength range is greater than the first wavelength range, and the third wavelength range is greater than the second wavelength range.

[0186] Through the semiconductor device of the embodiments of the present disclosure, in addition to being able to be used to measure depth information, other information of the surrounding environment can also be sensed, including but not limited to color information, light intensity information, etc. Details are described below with reference to the drawings.

[0187] Figure 1 shows a schematic diagram of an exemplary semiconductor device 100, including a first pixel 101, a second pixel 103, and a third pixel 105, consistent with some embodiments of the present disclosure. The first pixel 101 includes a first SPAD cell 107, the second pixel 103 includes a second SPAD cell 109, and the third pixel 105 includes a third SPAD cell 111. The first SPAD cell 107 can sense light in a first wavelength range for measuring depth. The second SPAD cell can sense light in a second wavelength range. The third SPAD cell can sense light in a third wavelength range. The third wavelength range is greater than the first wavelength range and the second wavelength range. The first SPAD cell 107, the second SPAD cell 109, or the third SPAD cell 111 can include one or more SPADs. In Figure 1, the first SPAD cell 107, the second SPAD cell 109, and the third SPAD cell 111 are shown to each include a 3*3 SPAD array, but the present disclosure is not limited thereto. The first SPAD cell 107, the second SPAD cell 109, or the third SPAD cell 111 can also include one SPAD, or other row and column number of SPAD arrays, such as 1*3, 2*3, 2*4, 2*5, and other row and column numbers of SPAD arrays. In addition, the first SPAD cell 107, the second SPAD cell 109, and the third SPAD cell 111 can have the same row and column number of SPAD arrays, or different row and column numbers of SPAD arrays.

[0188] When determining the number of SPADs in a SPAD cell, the number can be determined according to system requirements. For example, when it is necessary to improve the dynamic range, the number of SPADs in a SPAD cell can be increased, and the output of multiple SPADs can be used to determine the light signal incident on the SPAD cell, so that a clear response signal can be obtained in a weak light environment, thereby improving the dynamic range. When it is necessary to improve the resolution, the number of SPADs in a SPAD cell can be reduced, so as to reduce the pixel size and improve the resolution, and the dynamic range can be improved by multiple exposure.

[0189] Figure 2 shows a schematic diagram of an exemplary semiconductor device 200, including a first pixel 201, a second pixel 203, and a third pixel 205, consistent with some embodiments of the present disclosure. The first pixel 201 includes a first SPAD cell 207, the second pixel 203 includes a second SPAD cell 209, and the third pixel 205 includes a third SPAD cell 211. The first pixel 201 can be the first pixel 101 of the embodiment shown in Figure 1, the second pixel 203 can be the second pixel 103 of the embodiment shown in Figure 1, and the third pixel 205 can be the first pixel 105 of the embodiment shown in Figure 1. The first SPAD cell 207 can be the first SPAD cell 107 of the embodiment shown in Figure 1, the second SPAD cell 209 can be the second SPAD cell 109 of the embodiment shown in Figure 1, and the third SPAD cell 211 can be the third SPAD cell 111 of the embodiment shown in Figure 1.

[0190] As shown in FIG. 2, according to an embodiment of the present disclosure, the first pixel 201 further comprises a first filter 213 disposed on one side of the first SPAD cell 207. The first filter 213 is disposed on the side of the first SPAD cell 207 that receives the incident light beam. The first filter 213 can allow light of the first wavelength range to pass and be incident on the first SPAD cell 207. As shown in FIG. 2, the light incident on the first pixel 201 comprises light of a wavelength within the first wavelength range wb1 and light of a wavelength outside the first wavelength range wb1. The first filter 213 can only allow light of the wavelength within the first wavelength range wb1 to pass and be incident on the first SPAD cell 207, and light of a wavelength outside the first wavelength range wb1 will be blocked by the first filter 213 and cannot be transmitted. The first SPAD cell 107 senses light of the first wavelength range wb1 and outputs an electrical signal, which is used to measure the depth, the first wavelength range being, for example, 905 nm ± 5 nm, or 905 nm ± 10 nm, or 905 nm ± 40 nm, or 905 nm ± 60 nm, or 905 nm ± 100 nm, or 1550 nm ± 5 nm, or 1550 nm ± 10 nm, or 1550 nm ± 40 nm, or 1550 nm ± 60 nm, or 1550 nm ± 100 nm. When the exemplary semiconductor device 200 shown in FIG. 2 is used for a laser radar, the first wavelength range can be determined according to the wavelength of the probe light beam of the laser radar. For example, when the laser radar uses a probe light beam of 905 nm, the first wavelength range is, for example, 905 nm ± 5 nm, or 905 nm ± 10 nm, or 905 nm ± 40 nm, or 905 nm ± 60 nm, or 905 nm ± 100 nm, so that the first SPAD cell 207 of the first pixel 201 only receives the first wavelength range of the laser radar probe light beam, and light beams of other wavelengths outside the first wavelength range will be blocked by the first filter 213, so that the signal-to-noise ratio of the detection signal of the laser radar can be improved. When used for a laser radar, the distance of the obstacle in the environment can be calculated by calculating the time difference between the time when the first pixel receives the photons and the time when the laser radar emits the photons.

[0191] As can be understood by those skilled in the art, "allowing" to pass or transmit in the context of the present disclosure means that the transmittance of light of a certain wavelength range is greater than a predetermined threshold, for example, 99%, 95%, 90%, 85%, 80%, or 70%. Similarly, "blocking" in the context of the present disclosure means that the transmittance of light of a certain wavelength range is less than a predetermined threshold, for example, 1%, 5%, 10%, 15%, 20%, or 30%.

[0192] As shown in FIG. 2, according to an embodiment of the present disclosure, the second pixel 203 includes a second filter 215 disposed on a side of the second SPAD cell 209, e.g., on a side of the second SPAD cell 209 that receives an incident light beam. The second filter 215 can allow light having a wavelength in a second wavelength range to pass through and be incident on the second SPAD cell 209. As shown in FIG. 2, light incident on the second pixel 203 includes light having a wavelength in a first wavelength range wb2 and light having a wavelength outside the second wavelength range wb2, where the second filter 215 can allow only light having a wavelength in the second wavelength range wb2 to pass through and be incident on the second SPAD cell 209, and light having a wavelength outside the second wavelength range wb2 will be blocked by the second filter 215 and not transmitted. According to an embodiment of the present disclosure, the second wavelength range can include a wavelength range of one or more colors of visible light, e.g., one or more of a wavelength range of red, green, or blue, such that the second SPAD cell 209 of the second pixel 203 is capable of sensing visible light of that color and determining color information. Specific embodiments will be described in detail below. In addition, the second wavelength range of the present disclosure is not limited to one or more of a wavelength range of red, green, or blue, and other wavelength ranges can be utilized, e.g., to achieve multispectral imaging with a custom color filter array (CFA).

[0193] As shown in FIG. 2, according to an embodiment of the present disclosure, the third pixel 205 includes a third filter 217 disposed on a side of the third SPAD cell 211, e.g., on a side of the third SPAD cell 211 that receives an incident light beam. The third filter 217 can allow light having a wavelength in a third wavelength range to pass through and be incident on the third SPAD cell 211. As shown in FIG. 2, light incident on the third pixel 205 includes light having a wavelength in a third wavelength range wb3 and light having a wavelength outside the third wavelength range wb3, where the third filter 217 can allow only light having a wavelength in the third wavelength range wb3 to pass through and be incident on the third SPAD cell 211, and light having a wavelength outside the third wavelength range wb3 will be blocked by the third filter 217 and not transmitted. According to an embodiment of the present disclosure, the third wavelength range can correspond to or include a wavelength range of visible light, such that the third SPAD cell 211 of the third pixel 205 is capable of sensing an intensity of ambient light. Specific embodiments will be described in detail below.

[0194] Fig. 3 shows a schematic diagram of an exemplary semiconductor device 300, which includes a first pixel 301, a second pixel 303, and a third pixel 305, consistent with some embodiments of the present disclosure. The first pixel 301 includes a first SPAD cell 307, the second pixel 303 includes a second SPAD cell 309, and the third pixel 305 includes a third SPAD cell 311. The first pixel 301 can be the first pixel 101, 201 of the embodiments shown in Figs. 1 and 2, the second pixel 303 can be the second pixel 103, 203 of the embodiments shown in Figs. 1 and 2, the first SPAD cell 307 can be the first SPAD cell 107, 207 of the embodiments shown in Figs. 1 and 2, the second SPAD cell 309 can be the second SPAD cell 109, 209 of the embodiments shown in Figs. 1 and 2, and the third SPAD cell 311 can be the third SPAD cell 111, 211 of the embodiments shown in Figs. 1 and 2.

[0195] As shown in Fig. 3, according to embodiments of the present disclosure, the third pixel 305 does not include a filter, and thus incident light of different wavelengths can reach the third SPAD cell 311. In this case, the third wavelength range can include multiple wavelength bands, such as visible light band, infrared light band, ultraviolet light band, etc.

[0196] In the embodiment shown in Fig. 2, the third pixel 205 includes a third filter 217 that allows light of wavelengths in a third wavelength range to pass through. In the embodiment shown in Fig. 3, the third pixel 305 does not include a filter, and thus is capable of receiving incident light of different wavelengths, and the third wavelength range covers at least the wavelength range of the visible spectrum. The third wavelength range is larger than the second wavelength range, and thus the third pixel is capable of receiving light of a larger range of different wavelengths, and can capture more photons, with a higher photon collection efficiency. Even in a weak light environment, the third pixel is capable of capturing more photons due to the limited number of photons, and outputs a stronger signal than the second pixel, with a higher signal-to-noise ratio. Moreover, the photon count sensed by the third pixel is not affected by the color of the object, and can directly reflect the total intensity of the incident light and the light intensity variation in the scene, thus providing accurate and comprehensive scene brightness information. At the same time, the third pixel is sensitive to photons of multiple wavelengths, and can effectively reduce part of the color-related additional noise or distortion.

[0197] According to an embodiment of the present disclosure, as shown in FIG. 2 and FIG. 3, the first SPAD unit 207 (307) of the first pixel 201 (301), the second SPAD unit 209 (309) of the second pixel 203 (303), and the third SPAD unit 211 (311) of the third pixel 205 (305) are formed on the same circuit layer. The first SPAD unit, the second SPAD unit, and the third SPAD unit can also be formed on different circuit layers. Details will be described later.

[0198] Although the first pixel includes the first filter and the second pixel includes the second filter are shown in FIG. 2 and FIG. 3, those skilled in the art can understand that only one filter can also be provided, for example, only the first filter or only the second filter. These are within the scope of the present disclosure. In addition, although the first pixel, the second pixel, and the third pixel are shown to be the same size in FIG. 1, FIG. 2, and FIG. 3, the present disclosure does not limit the size relationship of the three pixels.

[0199] FIG. 4 shows an exemplary semiconductor device 400 including a plurality of first pixels 401, a plurality of second pixels 403, and a plurality of third pixels 405, consistent with some embodiments of the present disclosure. The first pixel 401 can be the first pixel 101 of the embodiment shown in FIG. 1, the second pixel 403 can be the second pixel 103 of the embodiment shown in FIG. 1, and the third pixel 405 can be the third pixel 105 of the embodiment shown in FIG. 1.

[0200] According to an embodiment of the present disclosure, in the plurality of first pixels, the plurality of second pixels, and the plurality of third pixels, the proportion of the plurality of third pixels is greater than 30% and less than or equal to 90%. The proportion can be the proportion of the number of third pixels in the total number of pixels, or the proportion of the area of the third pixels in the total pixel area.

[0201] According to another embodiment of the present disclosure, in the plurality of first pixels, the plurality of second pixels, and the plurality of third pixels, the proportion of the plurality of third pixels is greater than 50% and less than or equal to 70%. In the embodiment shown in FIG. 4, the area of one first pixel 401, second pixel 403, and third pixel 405 is the same, the number of first pixels 401 accounts for 11.1%, the number of second pixels 403 accounts for 19.8%, and the number of third pixels 405 accounts for 69.1%. The first pixel, the second pixel, and the third pixel can also be set to have different areas, so that the area of the first pixel 401 accounts for 11.1%, the area of the second pixel 403 accounts for 19.8%, and the area of the third pixel 405 accounts for 69.1% in total.

[0202] Figure 5 shows an exemplary semiconductor device 500 including a plurality of first pixels 501, a plurality of second pixels 503, and a plurality of third pixels 505, consistent with some embodiments of the present disclosure. The first pixels 501 can be the first pixels 101 of the embodiment shown in Figure 1, the second pixels 503 can be the second pixels 103 of the embodiment shown in Figure 1, and the third pixels 505 can be the third pixels 105 of the embodiment shown in Figure 1. In the embodiment shown in Figure 5, the area of one first pixel 401, one second pixel 403, and one third pixel 405 is the same, the number ratio of the plurality of first pixels 401 is 4.9%, the number ratio of the plurality of second pixels 403 is 19.8%, and the number ratio of the plurality of third pixels 405 is 80.2%. The first pixels, the second pixels, and the third pixels can also be configured to have different areas, and in general, the area ratio of the first pixels 401 is 4.9%, the area ratio of the second pixels 403 is 19.8%, and the area ratio of the third pixels 405 is 80.2%.

[0203] In the embodiments shown in Figures 4 and 5, a scheme of sparse first and second pixel distribution and dense third pixel distribution is adopted, the third pixels have a high ratio, and the first and second pixels are interspersed among the third pixels. The ratio of the third pixels can be set based on actual requirements. Increasing the ratio of the third pixels can improve the dynamic range of the semiconductor device and the imaging quality in a weak light environment. The ratio of the third pixels can be greater than or equal to 30%, 40%, 50%, or 60%. When the ratio of the third pixels is too large, it can affect the ratio of the second pixels, leading to color distortion. Therefore, the ratio of the third pixels can be set to be less than or equal to 90%, 80%, or 70%.

[0204] According to one embodiment of the present disclosure, the semiconductor device includes a first region and a second region, the first region is closer to the center of the semiconductor device than the second region, and the proportion of the third pixels in the second region is higher than that in the first region. For example, in the embodiment shown in FIG. 4, the inner circle rectangle and the outer circle rectangle are shown by dashed lines, wherein the first region includes the area of the semiconductor device 400 within the inner circle rectangle, the second region includes the area of the semiconductor device 400 between the inner circle rectangle and the outer circle rectangle, i.e. the edge region of the semiconductor device, and the first region is surrounded by the second region. In the first region, the proportion of the third pixels 405 is 65.3%; in the second region, the proportion of the third pixels 405 is 75%. For another example, in the embodiment shown in FIG. 5, the inner circle rectangle and the outer circle rectangle are shown by dashed lines, wherein the first region includes the area of the semiconductor device 500 within the inner circle rectangle, the second region includes the area of the semiconductor device 500 between the inner circle rectangle and the outer circle rectangle, i.e. the edge region of the semiconductor device, and the first region is surrounded by the second region. The second region is entirely composed of the third pixels 505, with a proportion of 100%. The first pixels and the second pixels are both distributed in the first region. The proportion of the third pixels in the first region is 67.3%. In use, the amount of light incident at the edge position of the semiconductor device is relatively small, and since the third pixels correspond to a wider third wavelength range, by arranging more third pixels in the first region close to the edge, the light incident at the edge position can be more fully detected.

[0205] According to one embodiment of the present disclosure, as shown in FIG. 4 and FIG. 5, the plurality of first pixels 401 (501) and the plurality of second pixels 403 (503) are uniformly dispersed in the plurality of third pixels 405 (505), so that the semiconductor device 400 (500) can relatively evenly sense light of the first wavelength range, the second wavelength range and the third wavelength range.

[0206] As described above, according to the embodiments of the present disclosure, the second pixels can sense visible light of a specific color. By uniformly arranging the second pixels in the third pixels, it is beneficial to improve the accuracy of the overall color. In addition, the first pixels are used to detect depth information, and by uniformly arranging the first pixels in the third pixels, it is helpful to provide depth information and light intensity information of different target points. In addition, according to the embodiments of the present disclosure, the arrangement of the first pixels can also be adjusted based on the needs of detection. For example, the first pixels are arranged only at positions where depth (e.g. distance) detection is needed, and no first pixels or only a small number of first pixels are arranged at other positions.

[0207] According to one embodiment of the present disclosure, the first pixel has 4-9 third pixels around it, or has 6-8 third pixels around it. The second pixel has 4-9 third pixels around it, or has 6-8 third pixels around it. In the embodiment shown in FIG. 4, taking the first pixel 401 (labeled with “D”) and the second pixel 403 (labeled with “C”) in the middle as examples, the first pixel 401 has four third pixels 405 around it, and the second pixel 403 has seven third pixels 405 around it. In the embodiment shown in FIG. 5, taking the first pixel 501 (labeled with “D”) and the second pixel 503 (labeled with “C”) in the middle as examples, the first pixel 501 has eight third pixels 505 around it, and the second pixel 503 has eight third pixels 505 around it. In addition, those skilled in the art can understand that “around” in some embodiments of the present disclosure includes the adjacent position relationship in the up, down, left, right, upper left, lower left, upper right, and lower right directions. In other embodiments of the present disclosure, “around” can also represent other position relationships, for example, the adjacent position relationship in the up, down, left, right directions, and for example, any one or more of the adjacent position relationships in the up, down, left, right, upper left, lower left, upper right, and lower right directions. In the present disclosure, “adjacent” can mean close or the distance between pixels is less than a threshold value, which can be represented by the number of pixels, for example, 1 pixel, 2 pixels, or other number of pixels.

[0208] Figure 6 illustrates an exemplary semiconductor device 600 including a plurality of first pixels 601, a plurality of second pixels 603, and a plurality of third pixels 605, consistent with some embodiments of the present disclosure. The first pixels 601 can be the first pixels 101 of the embodiment illustrated in Figure 1, the second pixels 603 can be the second pixels 103 of the embodiment illustrated in Figure 1, and the third pixels 605 can be the third pixels 105 of the embodiment illustrated in Figure 1. As shown in Figure 6, the plurality of second pixels 603 forms a second pixel cluster. In the semiconductor device 600 shown in the figure, four second pixel clusters are formed. One second pixel cluster includes four second pixels 603 arranged in a 2*2 arrangement, and the second pixel cluster is surrounded by eight third pixels 605. In some embodiments, the plurality of second pixel clusters can all include four second pixels 603 arranged in a 2*2 arrangement. In some embodiments, each second pixel cluster can include four second pixels 603 arranged in a 2*2 arrangement. The second pixel cluster can also include other numbers of second pixels arranged in other arrangements, such as two second pixels 603 arranged in a 1*2 arrangement, or three second pixels arranged in a 1*3 arrangement, or six second pixels 603 arranged in a 2*3 arrangement. In addition, in Figure 6, each second pixel cluster is surrounded by four first pixels 601 and eight third pixels 605. In some embodiments, the plurality of second pixel clusters can all be surrounded by four first pixels 601 and eight third pixels 605. In some embodiments, each second pixel cluster can be surrounded by four first pixels 601 and eight third pixels 605. One skilled in the art can also adjust the arrangement of the first pixels 601 and the third pixels 605 such that each second pixel cluster is surrounded by six, seven, nine, or more third pixels 605. These variations are within the scope of the present disclosure. In addition, in the semiconductor device, the plurality of second pixel clusters can have the same number and the same arrangement of second pixels 603, as in the case shown in Figure 6, or can have different numbers and / or different arrangements of second pixels 603.

[0209] Figure 7 illustrates an exemplary semiconductor device 700 including a plurality of first pixels 701, a plurality of second pixels 703, and a plurality of third pixels 705, consistent with some embodiments of the present disclosure. The first pixels 701 can be the first pixels 101 of the embodiment illustrated in Figure 1, the second pixels 703 can be the second pixels 103 of the embodiment illustrated in Figure 1, and the third pixels 705 can be the third pixels 105 of the embodiment illustrated in Figure 1. As shown in Figure 7, in the semiconductor device 700, two clusters of second pixels are formed, and further includes a plurality of second pixels 703 distributed individually. One cluster of second pixels includes seven second pixels 703 arranged in 1*7, and has 20 third pixels 705 around the cluster of second pixels. In some embodiments, each of the plurality of clusters of second pixels can include seven second pixels 703 arranged in 1*7, and has 20 third pixels 705 around the cluster of second pixels. In some embodiments, each of the plurality of clusters of second pixels can include seven second pixels 703 arranged in 1*7, and has 20 third pixels 705 around the cluster of second pixels.

[0210] Figure 8 illustrates an exemplary semiconductor device 800 including a plurality of first pixels 801, a plurality of second pixels 803, and a plurality of third pixels 805, consistent with some embodiments of the present disclosure. The first pixels 801 can be the first pixels 101 of the embodiment illustrated in Figure 1, the second pixels 803 can be the second pixels 103 of the embodiment illustrated in Figure 1, and the third pixels 805 can be the third pixels 105 of the embodiment illustrated in Figure 1. As shown in Figure 8, the plurality of first pixels 801 form a cluster of first pixels, the cluster of first pixels (taking the cluster of first pixels located in the center as an example) has eight third pixels 805 around the cluster of first pixels, and has four second pixels 803.

[0211] In the semiconductor device 800 shown in FIG. 8, one first pixel cluster includes four first pixels 801 arranged in a 2*2 pattern. In some embodiments, multiple first pixel clusters can all include four first pixels 801 arranged in a 2*2 pattern. A first pixel cluster can also include a different number of first pixels arranged in a different pattern, such as two first pixels 801 arranged in a 1*2 pattern, or three first pixels arranged in a 1*3 pattern, or six first pixels 603 arranged in a 2*3 pattern. In addition, in FIG. 8, the central first pixel cluster is surrounded by four second pixels 803 and eight third pixels 805. One skilled in the art can also modify the arrangement of the second pixels 803 and the third pixels 805 so that the first pixel cluster is surrounded by six, seven, nine, or more third pixels 805. These variations are within the scope of the present disclosure. In addition, in a semiconductor device, multiple first pixel clusters can have the same number and the same arrangement of first pixels 801, as in the case shown in FIG. 8, or can have different numbers and / or different arrangements of first pixels 801. By arranging the first pixel clusters, the dynamic range of the first pixels can be effectively improved.

[0212] FIGS. 4-8 show various pixel arrangements according to embodiments of the present disclosure. The arrangement of the pixels is not limited to the schemes of FIGS. 4-8, and the proportion and arrangement of the first pixels, the second pixels, and the third pixels can be adjusted according to actual application requirements.

[0213] According to one embodiment of the present disclosure, the second wavelength range can include a first sub-band, a second sub-band, or a third sub-band. The first sub-band, the second sub-band, and the third sub-band, for example, respectively include the wavelength ranges of red light, green light, and blue light in visible light, where the wavelength range of red light is, for example, 625-740 nm, the wavelength range of green light is, for example, 500-565 nm, and the wavelength range of blue light is, for example, 440-485 nm. In other embodiments, the second wavelength range can include more or fewer sub-bands, and the sub-bands can include the wavelength ranges of other colors of visible light. Correspondingly, the second pixel includes any one of a first sub-pixel, a second sub-pixel, and a third sub-pixel. The first sub-pixel includes a first sub-filter that allows light of the first sub-band to pass through. The second sub-pixel includes a second sub-filter that can allow light of the second sub-band to pass through. The third sub-pixel includes a third sub-filter that can allow light of the third sub-band to pass through. As an example, R will be used to represent the first sub-pixel, G will be used to represent the second sub-pixel, and B will be used to represent the third sub-pixel in the drawings and the description.

[0214] FIG. 9A illustrates an exemplary semiconductor device 900 including a plurality of first pixels 901, a plurality of second pixels 903, and a plurality of third pixels 905, consistent with some embodiments of the present disclosure. The first pixels 901 can be the first pixels 101 of the embodiment illustrated in FIG. 1, and the third pixels 905 can be the third pixels 105 of the embodiment illustrated in FIG. 1. In the embodiment of FIG. 9A, the first sub-pixel R, the second sub-pixel G, and the third sub-pixel B are evenly dispersed in the third pixel 905.

[0215] FIG. 9B illustrates an exemplary semiconductor device including a plurality of first pixels, a plurality of second pixels, and a plurality of third pixels, consistent with some embodiments of the present disclosure. In the embodiment of FIG. 9B, four second pixels form a second pixel cluster, and in one second pixel cluster, one first sub-pixel R, two second sub-pixels G, and one third sub-pixel B are included.

[0216] In the embodiments illustrated in FIGS. 2 and 3 above, the first SPAD cell 207 (307), the second SPAD cell 209 (309), and the third SPAD cell 211 (311) are formed on the same circuit layer. According to embodiments of the present disclosure, the three can also be formed on different circuit layers. FIG. 10A illustrates an expanded view of an exemplary semiconductor device 1000, and FIG. 10B illustrates a side view of a portion of SPAD cells in the semiconductor device 1000, consistent with some embodiments of the present disclosure, which are described in detail below with reference to FIGS. 10A and 10B.

[0217] The semiconductor device 1000 shown in FIGS. 10A and 10B includes a plurality of first pixels 1001, a plurality of second pixels 1003, and a plurality of third pixels 1005. The first pixels 1001 can be the first pixels 101 of the embodiment shown in FIG. 1, the second pixels 1003 can be the second pixels 103 of the embodiment shown in FIG. 1, and the third pixels 1005 can be the third pixels 105 of the embodiment shown in FIG. 1. As shown in FIG. 10B, the first SPAD units 1007 are formed on one circuit layer (referred to as a “first circuit layer”), and the second SPAD units 1009 and the third SPAD units 1011 are collectively formed on another circuit layer (referred to as a “second circuit layer”). The second circuit layer is stacked on the first circuit layer in a stacking direction indicated by an arrow R in FIG. 10B. The projection of the first SPAD units 1007 on a plane perpendicular to the stacking direction at least partially overlaps or aligns with the projection of the second SPAD units 1009 and the third SPAD units 1011 on the plane. In FIGS. 10A and 10B, there is one first SPAD unit 1007 under each of the second SPAD unit 1009 and the third SPAD unit 1011, but the present disclosure is not limited thereto, and the corresponding first SPAD unit 1007 can be provided only under a part of the second SPAD units 1009 and the third SPAD units 1011. In this way, at least part of the second pixels and the third pixels are stacked above the corresponding first pixels, that is, at least part of the second pixels and the third pixels can obtain accurate depth (distance) information while performing self-sensing. The duty ratio of the second pixels and the third pixels is not affected by the arrangement of the first pixels, which is beneficial to improving image quality.

[0218] According to an embodiment of the present disclosure, as shown in FIG. 10B, the second pixel 1003 includes a second filter 1015 disposed on one side of the second SPAD unit 1009. The second filter 1015 can allow light in the first wavelength range and the second wavelength range to pass through. As shown in FIG. 10B, the light incident on the second pixel 1003 includes light with a wavelength in the first wavelength range wb1, light with a wavelength in the second wavelength range wb2, and light with other wavelengths, wherein the second filter 1015 can allow light with a wavelength in the first wavelength range wb1 and the second wavelength range wb2 to pass through and be incident on the second SPAD unit 1009, and light with other wavelengths will be blocked by the second filter 1015 and cannot be transmitted. The second SPAD unit 1009 senses light in the second wavelength range wb2 and outputs an electrical signal, and light with a wavelength in the first wavelength range wb1 will continue to propagate through the second SPAD unit 1009 and be incident on the first pixel 1001.

[0219] According to an embodiment of the present disclosure, as shown in FIG. 10B, the third pixel 1005 includes a third SPAD unit 1011 and does not include a filter. Therefore, incident light of different wavelengths can all reach the third SPAD unit 1011. After the incident light is partially sensed by the third SPAD unit 1011, the incident light continues to propagate through the third SPAD unit 1011 and is incident on the first pixel 1001. In addition, although the third pixel 1005 does not include a filter in the embodiment shown in FIG. 10B, those skilled in the art can understand that a filter can also be provided on the third SPAD unit 1011, which allows light of the first wavelength range wb1 and light of the third wavelength range wb3 to pass through, and blocks light beams of other wavelengths.

[0220] In the embodiment shown in FIG. 10B, the first pixel can include a first filter 1013 that allows only light with a wavelength within the first wavelength range wb1 to pass through and be incident on the first SPAD unit 1007. According to an embodiment of the present disclosure, the SPADs in the first SPAD unit 1007 and the second SPAD unit 1009 can be formed of different materials. According to an embodiment of the present disclosure, the SPADs in the first SPAD unit 1007 can be indium gallium arsenide-based SPADs, tellurium cadmium mercury-based SPADs, or indium telluride-based SPADs, and the SPADs in the second SPAD unit 1009 can be silicon-based SPADs. According to another embodiment of the present disclosure, the SPADs in the first SPAD unit 1007 can be silicon-based SPADs, and the SPADs in the second SPAD unit 1009 can be indium gallium arsenide-based SPADs, tellurium cadmium mercury-based SPADs, or indium telluride-based SPADs.

[0221] In the above embodiments, the first SPAD unit, the second SPAD unit, and the third SPAD unit are each formed of an independent SPAD. According to other embodiments of the present disclosure, the first SPAD unit, the second SPAD unit, and the third SPAD unit can also share at least part of the SPADs, for example, the first SPAD unit and the second SPAD unit can include a shared SPAD, and the first SPAD unit and the third SPAD unit can include a shared SPAD. Details are described below.

[0222] FIG. 11 shows a schematic diagram of a first SPAD cell sharing a SPAD with a second SPAD cell, consistent with some embodiments of the present disclosure. As shown in FIG. 11, the first SPAD cell and the second SPAD cell include a shared SPAD (or SPAD array) that can sense light in a first wavelength range and light in a second wavelength range. According to embodiments of the present disclosure, as shown in FIG. 11, the shared SPAD is provided with a filter on one side, which can allow light in the first wavelength range and light in the second wavelength range to pass through. The shared SPAD cell can work in time division. For example, the shared SPAD cell can be used as a first SPAD cell in a first time period, and can be used as a second SPAD cell in a second time period. As shown in FIG. 11, the light incident on the filter includes light in a first wavelength range wb1, light in a second wavelength range wb2, and light of other wavelengths, wherein the filter can allow light in the first wavelength range wb1 and the second wavelength range wb2 to pass through and be incident on the shared SPAD, and light of other wavelengths will be blocked by the filter and cannot be transmitted. The first wavelength range wb1 can include the wavelength range emitted by the lidar. In a ranging time period, the emitter emits a light beam with a wavelength in the first wavelength range, and the shared SPAD can sense light in the first wavelength range in the ranging time period, so its output signal can be used to calculate the distance of the obstacle. In other time periods, the emitter can or can not emit a light beam, and the shared SPAD can sense light in the second wavelength range, e.g., to determine color information.

[0223] In this way, the shared SPAD (array) can be used as both a first SPAD cell and a second SPAD cell. When the semiconductor device of the present disclosure is used as an RGB camera, the resolution and arrangement of the second pixel are not affected by the first pixel, and the overall resolution is higher and more uniform.

[0224] FIG. 11 shows a case where the first SPAD unit shares a SPAD with the second SPAD unit. Similarly, the first SPAD unit and the third SPAD unit can also include a shared SPAD, and a filter can be disposed on one side of the shared SPAD, which can allow light in the first wavelength range and light in the third wavelength range to pass through. The shared SPAD unit can be used as the first SPAD unit in a third time period and as the third SPAD unit in a fourth time period, and the specific structure is similar to that of FIG. 11, which will not be described here. According to another embodiment of the present disclosure, a filter can not be disposed on one side of the shared SPAD, and incident light of different wavelengths can all reach the shared SPAD. In the third time period, the emitter emits a light beam, and the wavelength of the light beam is in the first wavelength range, so the shared SPAD can sense the light beam within the first wavelength range and the light beam outside the first wavelength range. The subsequent data processing device can process the output signal of the shared SPAD in the third time period to determine the depth information. In the fourth time period, the emitter can emit a light beam or can not emit a light beam, and the shared SPAD can sense light in the third wavelength range, for example, to determine ambient light intensity information.

[0225] According to an embodiment of the present disclosure, the third wavelength range at least partially overlaps with the wavelength range of visible light, or the third wavelength range includes the wavelength range of visible light, or corresponds to the wavelength range of visible light.

[0226] The present disclosure also provides a sensing device applying the semiconductor device as described above. FIG. 12 shows a sensing device 1200 consistent with some embodiments of the present disclosure. The following will be described in detail with reference to FIG. 12.

[0227] As shown in FIG. 12, the sensing device 1200 includes a semiconductor device 1201 and a data processing device 1203. The semiconductor device 1201 can be any one of the semiconductor devices 100, 200, 300, 400, 500, 600, 700, 800, 900, and 1000 as described above.

[0228] The data processing apparatus 1203 can receive signals output by the first pixel, the second pixel and the third pixel of the semiconductor device to determine information of the surrounding environment. In some embodiments, the data processing apparatus 1202 can include a control circuit, a central processing unit (CPU), a micro control unit (MCU), a digital signal processor (DSP), other general purpose processors, an application specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a complex programmable logic device (CPLD) or other programmable logic devices, discrete gate or transistor logic, discrete hardware components, etc.

[0229] According to embodiments of the present disclosure, the data processing apparatus 1203 can determine color information based on at least the signal output by the second pixel, and determine light intensity information based on at least the signal output by the third pixel.

[0230] FIG. 13 shows a sensing device 1300 consistent with some embodiments of the present disclosure. The sensing device 1300 includes a semiconductor device 1301, a data processing apparatus 1303 and a transmitter 1305, wherein the semiconductor device 1301 is the same as the semiconductor device 1201 of the embodiment shown in FIG. 12, and the data processing apparatus 1303 is the same as the data processing apparatus 1203 of the embodiment shown in FIG. 12.

[0231] The transmitter 1305 can emit a light beam L, and the wavelength of the light beam L is within the first wavelength range wb1. The data processing apparatus 1303 can determine depth information according to the emission time of the light beam and the receiving time of the first pixel receiving light of the first wavelength range. As shown in FIG. 13, the data processing apparatus 1303 is coupled with the transmitter 1305, so that the emission time of the light beam L emitted by the transmitter 1305 can be obtained. The data processing apparatus 1303 is coupled with the semiconductor device 1301 (for example, coupled with the first pixel in the semiconductor device 1301), and determines the receiving time of the first pixel receiving light of the first wavelength range according to the electrical signal output by the first pixel. According to the time difference between the emission time and the receiving time, the time of flight (ToF) of the light beam L emitted and returned to the sensing device 1300 can be determined, and according to the product of half of the time of flight and the speed of light c, the distance information of the obstacle, i.e. the depth information, can be determined.

[0232] In some embodiments, the transmitter can include a transmit circuit, a vertical-cavity surface-emitting laser (VCSEL), an edge-emitting laser (EEL), a distributed feedback laser (DFB), a fiber laser, or the like.

[0233] According to an embodiment of the present disclosure, the data processing apparatus 1203 can determine color information based on the signal output by the second pixel, and determine light intensity information based on the signal output by the third pixel. According to an embodiment of the present disclosure, the data processing apparatus 1203 can also determine at least one of the color information or the light intensity information based on the outputs of the second pixel and the third pixel. According to an embodiment of the present disclosure, for one of the first pixel, the second pixel, and the third pixel, the depth information, the color information, and the light intensity information of the pixel can be established. For one pixel, the data processing apparatus 1203 can determine one of the information based on the output signal of the pixel, for example, determine the depth information based on the output signal of the first pixel, determine the color information based on the output signal of the second pixel, and determine the light intensity information based on the output signal of the third pixel, while the other information cannot be directly obtained from the output signal of the pixel itself, and can be obtained by means of the output signal of other pixels.

[0234] According to an embodiment of the present disclosure, the data processing apparatus 1203 can determine the color information of the first pixel and the third pixel based on at least the signal output by the second pixel. According to an embodiment of the present disclosure, the data processing apparatus can determine the brightness information of the second pixel based on at least the signal output by the third pixel. According to an embodiment of the present disclosure, the data processing apparatus can determine the color information of the first pixel based on at least the signals output by the second pixel and the third pixel, for example, by interpolation. According to an embodiment of the present disclosure, the data processing apparatus can determine the color information of the first pixel and the third pixel based on at least the output signal of the second pixel and the output signal of the first pixel. Details are described below.

[0235] For example, the output signal of the third pixel reflects the light intensity information. The data processing device can select one or more second pixels adjacent to the third pixel, and obtain the color information of the third pixel by color interpolation or color reproduction.

[0236] As described above, the output signal of the second pixel can reflect color information. The data processing device can determine the luminance information of the second pixel based on at least the signal output by the third pixel. Specifically, the data processing device can estimate the luminance information of the second pixel by interpolation or the like based on the luminance information of the third pixel adjacent to the second pixel, so that the luminance values of the pixels in the image are more accurate.

[0237] According to an embodiment of the present disclosure, the data processing device 1303 can generate image data according to the signal output by the second pixel, the color information of the first pixel, and the color information of the third pixel.

[0238] According to an embodiment of the present disclosure, the data processing apparatus 1303 generates image data in units of pixels, i.e., the first pixel, the second pixel and the third pixel correspond to one pixel in the image data respectively. According to another embodiment of the present disclosure, the data processing apparatus 1303 generates image data in units of macro-pixels, wherein a macro-pixel comprises at least two of the first pixel, the second pixel and the third pixel, or comprises at least one first pixel, at least one second pixel and at least one third pixel. The data processing apparatus 1303 determines the depth information of the macro-pixel according to the output signal of the first pixel, determines the color information of the macro-pixel according to the output signal of the second pixel, and determines the brightness information of the macro-pixel according to the output signal of the third pixel. According to an embodiment of the present disclosure, the data processing apparatus 1303 can determine the depth information of the macro-pixel according to the output signal of the first pixel, and determine at least one of the color information or the brightness information of the macro-pixel based on the output signals of the second pixel and the third pixel.

[0239] FIG. 14 shows the arrangement of macro-pixels according to some embodiments of the present disclosure. Macro-pixels PX11, PX21, PX31, PX14 and PX12 are shown in FIG. 14, and one macro-pixel comprises a 4*4 pixel array. According to an embodiment of the present disclosure, one macro-pixel can also comprise a pixel array with other number of rows and columns, and different macro-pixels can have the same number of rows and columns, or different number of rows or columns. In some embodiments, different macro-pixels can have different shapes. One macro-pixel comprises a first pixel, a second pixel and a third pixel, wherein the data processing apparatus 1303 can determine the depth information of the macro-pixel according to the output signal of the first pixel in the macro-pixel, determine the color information of the macro-pixel according to the output signal of the second pixel, and determine the brightness information of the macro-pixel according to the output signal of the third pixel. According to an embodiment of the present disclosure, the data processing apparatus 1303 can determine the depth information of the macro-pixel according to the output signal of the first pixel, and determine at least one of the color information or the brightness information of the macro-pixel based on the output signals of the second pixel and the third pixel. The center-to-center distance between adjacent macro-pixels is one pixel. According to an embodiment of the present disclosure, the center-to-center distance between adjacent macro-pixels can also be set to other values less than the size of the macro-pixel, such as two pixels or three pixels.

[0240] According to another embodiment of the present disclosure, a macro-pixel can also comprise only two of the first pixel, the second pixel and the third pixel, and the methods described above are provided to obtain the depth information, the color information and the light intensity information of the macro-pixel.

[0241] Embodiments of the present disclosure provide a sensing device including a SPAD, which can measure depth information by time of flight under the condition of active light emission, and can also sense the color and intensity of ambient light, i.e., realize color image sensing. In a weak light environment (e.g., at night), the noise influence of color light on time of flight ranging is reduced. Therefore, in a weak light environment, the first pixel can cooperate with the emitter to actively emit a detection pulse to realize ranging. At the same time, in a weak light environment, the first pixel can also perform imaging, and the emitter can actively emit a detection light, which can be continuous light or pulsed light, thereby providing light for imaging.

[0242] According to an aspect of the present disclosure, FIG. 15 shows a schematic diagram of an exemplary semiconductor device 1500 including a first pixel 1501 and a second pixel 1503, consistent with some embodiments of the present disclosure. The first pixel 1501 includes a first SPAD cell 1505, which can sense light in a first wavelength range to determine a time of flight (ToF) for measuring distance or depth. The output signal of the first SPAD cell 1505 can be output to a subsequent signal processing circuit for determining the reception time of the light in the first wavelength range received by the first SPAD cell 1505. According to the reception time, in combination with the emission time of the light in the first wavelength range, the time of flight (ToF) can be determined, and further the distance information can be determined. The second pixel 1503 includes a second SPAD cell 1507, which can sense light in a second wavelength range to determine a structured light pattern. The second SPAD cell 1507 can capture a structured light pattern, which includes but is not limited to dot matrix, stripe, and the like. According to embodiments of the present disclosure, the second pixel 1503 can work in cooperation with a structured light projection light source, which projects a specific structured light pattern onto the surface of an object. The second pixel 1503 images the structured light pattern, and a subsequent signal processing circuit can determine the depth information and surface topography of the object based on the changes in the structured light pattern in the imaging. The wavelength of the light beam emitted by the structured light projection light source is, for example, in the visible light band or the infrared band.

[0243] The first SPAD unit 1505 and the second SPAD unit 1507 each include one or more SPADs. In FIG. 15, a case is shown in which the first SPAD unit 1505 and the second SPAD unit 1507 each include a 3*3 SPAD array, but the present disclosure is not limited thereto, and the first SPAD unit 1505 and the second SPAD unit 1507 can each include one SPAD, or can include other numbers of rows and columns of SPAD arrays, such as 1*3, 2*3, 2*4, 2*5, and other numbers of rows and columns of SPAD arrays. In addition, the first SPAD unit 1505 and the second SPAD unit 1507 can have the same number of rows and columns of SPAD arrays, or can have different numbers of rows and columns of SPAD arrays.

[0244] The number of SPADs in the first SPAD unit 1505 and the second SPAD unit 1507 can be determined according to system requirements. For example, when it is necessary to improve the dynamic range, the number of SPADs in the SPAD unit can be increased, and the output of multiple SPADs can be used to determine the optical signal incident on the SPAD unit, so that a clear response signal can be obtained in a weak light environment, thereby improving the dynamic range of the SPAD unit. When it is necessary to improve the spatial resolution, the number of SPADs in the SPAD unit can be reduced, thereby reducing the pixel size and improving the spatial resolution.

[0245] FIG. 16 shows a schematic diagram of an exemplary semiconductor device 1600 including a first pixel 1601 and a second pixel 1603, consistent with some embodiments of the present disclosure. The first pixel 1601 includes a first SPAD unit 1605, and the second pixel 1603 includes a second SPAD unit 1607. The first pixel 1601 can be the first pixel 1501 of the embodiment shown in FIG. 15, the second pixel 1603 can be the second pixel 1503 of the embodiment shown in FIG. 15, the first SPAD unit 1605 can be the first SPAD unit 1505 of the embodiment shown in FIG. 15, and the second SPAD unit 1607 can be the second SPAD unit 1507 of the embodiment shown in FIG. 15.

[0246] As shown in FIG. 16, according to an embodiment of the present disclosure, the first pixel 1601 further comprises a first filter 1609 disposed on one side of the first SPAD cell 1605. The first filter 1609 is disposed on the side of the first SPAD cell 1605 that receives the incident light beam. The first filter 1609 can allow light in the first wavelength range wb1 to pass and be incident on the first SPAD cell. As shown in FIG. 16, the light incident on the first pixel 1601 includes light with a wavelength in the first wavelength range wb1 and light with a wavelength outside the first wavelength range wb1, wherein the first filter 1609 can only allow light with a wavelength in the first wavelength range wb1 to pass and be incident on the first SPAD cell 1605, and light with a wavelength outside the first wavelength range wb1 will be blocked by the first filter 1609 and cannot be transmitted. The first SPAD cell 1605 senses the light in the first wavelength range wb1 and outputs an electrical signal, which is used to determine the time of flight (ToF). The first wavelength range is, for example, 905 nm ± 5 nm, or 905 nm ± 10 nm, or 905 nm ± 40 nm, or 905 nm ± 60 nm, or 905 nm ± 100 nm, or 1550 nm ± 5 nm, or 1550 nm ± 10 nm, or 1550 nm ± 40 nm, or 1550 nm ± 60 nm, or 1550 nm ± 100 nm. When the exemplary semiconductor device 1600 shown in FIG. 16 is used for a laser radar, the first wavelength range can be determined according to the wavelength of the probe light beam of the laser radar. For example, when the laser radar uses a probe light beam with a wavelength of 905 nm, the first wavelength range is, for example, 905 nm ± 5 nm, or 905 nm ± 10 nm, or 905 nm ± 40 nm, or 905 nm ± 60 nm, or 905 nm ± 100 nm, so that the first SPAD cell 1605 of the first pixel 1601 only receives the echo within the first wavelength range of the probe light beam of the laser radar, and light beams with other wavelengths outside the first wavelength range will be blocked by the first filter 1609, thereby improving the signal-to-noise ratio of the detection signal of the laser radar. When used for a laser radar, the distance of the obstacle in the environment can be determined by calculating the time difference between the time when the first pixel 1601 receives the echo and the time when the laser radar emits the probe light beam.

[0247] As understood by those skilled in the art, “allowing” to pass or transmit in the context of the present disclosure means that the transmittance of light in a certain wavelength range is greater than a preset threshold, which is, for example, 99%, 95%, 90%, 85%, 80%, or 70%. Similarly, “blocking” in the context of the present disclosure means that the transmittance of light in a certain wavelength range is less than a preset threshold, which is, for example, 1%, 5%, 10%, 15%, 20%, or 30%.

[0248] In addition, in some embodiments, the first filter 1609 shown in FIG. 16 can be omitted. In the case of omitting the first filter 1609, the time of flight can also be calculated. For example, when the first filter 1609 is omitted, the time of flight can be calculated based on the signal output by the first SPAD unit 1605 to determine the distance of the obstacle during a period when ambient light is relatively weak (e.g., at night). In addition, when the first filter 1609 is omitted, the subsequent signal processing circuit can also filter the signal output by the first SPAD unit 1605 to filter out the component of ambient light, thereby obtaining an effective echo signal.

[0249] As shown in FIG. 16, according to embodiments of the present disclosure, the second pixel 1603 includes a second filter 1611 disposed on one side of the second SPAD unit 1607, for example, on the side of the second SPAD unit 1607 that receives the incident light beam. The second filter 1611 can allow light having a wavelength within a second wavelength range to pass and be incident on the second SPAD unit 1607. As shown in FIG. 16, the light incident on the second pixel 1603 includes light having a wavelength within a second wavelength range wb2 and light having a wavelength outside the second wavelength range wb2, wherein the second filter 1611 can only allow light having a wavelength within the second wavelength range wb2 to pass and be incident on the second SPAD unit 1607, and light having a wavelength outside the second wavelength range wb2 will be blocked by the second filter 1611 and cannot be transmitted. According to embodiments of the present disclosure, the second wavelength range can be a wavelength range of one or more colors of visible light, or include a wavelength range of multiple colors of visible light, so that the second SPAD unit 1607 of the second pixel 1603 can sense the brightness of the environment while being able to collect a structured light pattern. Specific embodiments will be described in detail hereinafter.

[0250] FIG. 17 shows a schematic diagram of an exemplary semiconductor device 1700 including a first pixel 1701 and a second pixel 1703, consistent with some embodiments of the present disclosure. The first pixel 1701 includes a first SPAD unit 1705, and the second pixel 1703 includes a second SPAD unit 1707. The first pixel 1701 can be the first pixel 1501, 1601 of the embodiments shown in FIGS. 15 and 16, the first SPAD unit 1705 can be the first SPAD unit 1505, 1605 of the embodiments shown in FIGS. 15 and 16, and the second SPAD unit 1707 can be the second SPAD unit 1507, 1607 of the embodiments shown in FIGS. 15 and 16.

[0251] As shown in FIG. 17, according to an embodiment of the present disclosure, the filter of the second pixel 1703 can be omitted, and thus the second SPAD unit 1707 can receive light of multiple wavelengths incident thereon. In this case, the second wavelength range can include multiple wavebands, such as a visible light waveband, an infrared light waveband, an ultraviolet light waveband, and the like. In the embodiment shown in FIG. 17, the second pixel 1703 does not include a filter, and the second SPAD unit 1707 is capable of receiving light beams of different wavelengths, and thus the second SPAD unit 1707 of the second pixel 1703 is capable of capturing more photons and obtaining higher detection efficiency in a weak light environment. In addition, the output signal of the second pixel 1703 is capable of directly reflecting the total intensity of incident light and the light intensity change in the scene, and is capable of outputting an accurate and high-resolution scene brightness (gray scale) image, which can be used for structured light measurement.

[0252] According to an embodiment of the present disclosure, when the semiconductor device 1500, 1600, or 1700 is used for sensing surrounding environment information, the light source wavelength of the structured light can be determined first, and then the second wavelength range wb2 is determined so that the light source wavelength of the structured light falls within the second wavelength range wb2. In the embodiment shown in FIG. 17, the second pixel 1703 does not include a filter, and thus the second SPAD 1707 is capable of receiving and sensing light beams of the light source wavelength of the structured light, thereby collecting a structured light pattern. In the embodiment shown in FIG. 16, the second pixel 1603 includes a second filter 1611, and when the second filter 1611 is selected, the light source wavelength of the structured light can be made to fall within the bandpass range of the second filter 1611, i.e., within the second wavelength range wb2, and the second SPAD unit 1607 receives light beams within the second wavelength range wb2, while light beams outside the second wavelength range wb2 will be blocked by the second filter 1611 and cannot be incident on the second SPAD unit 1607, and thus the signal-to-noise ratio of structured light sensing can be improved.

[0253] According to embodiments of the present disclosure, the second wavelength range includes a first sub-band, a second sub-band, or a third sub-band. The first sub-band, the second sub-band, and the third sub-band, for example, respectively include wavelength ranges of red light, green light, and blue light in visible light, where the wavelength range of red light can be 625-740 nm, the wavelength range of green light can be 500-565 nm, and the wavelength range of blue light can be 440-485 nm. In other embodiments, the second wavelength range can include more or fewer sub-bands, and the sub-bands can correspond to wavelength ranges of other colors of visible light. Correspondingly, the second pixel includes any one of a first sub-pixel, a second sub-pixel, and a third sub-pixel, where the first sub-pixel includes a first sub-filter that allows light of the first sub-band to pass through; the second sub-pixel includes a second sub-filter that can allow light of the second sub-band to pass through; and the third sub-pixel includes a third sub-filter that can allow light of the third sub-band to pass through. As an example, R will be used to represent the first sub-pixel, G will be used to represent the second sub-pixel, and B will be used to represent the third sub-pixel in the accompanying drawings and the description.

[0254] For example, in the embodiment shown in FIG. 16, the second filter 1611 is a first sub-filter. The second wavelength range includes a first sub-band. The first sub-band includes a wavelength range of red light (e.g., 625-740 nm). The second filter 1611 (i.e., the first sub-filter) and the second SPAD cell 1607 form a first sub-pixel. In this case, the first sub-pixel can sense a structured light pattern in the red light band, and can also sense the intensity of red light in ambient light. According to embodiments of the present disclosure, the semiconductor device 1600 shown in FIG. 16 can further include a second sub-pixel or a third sub-pixel.

[0255] According to embodiments of the present disclosure, the semiconductor device further includes a third pixel that can sense light of a third wavelength range, the third wavelength range being greater than the second wavelength range and the first wavelength range. For example, the first pixel can sense light of the first wavelength range to determine a time of flight, the second pixel can sense light of the second wavelength range to determine a structured light pattern, and the third pixel can sense light of the third wavelength range to determine a brightness of a surrounding environment. Details are described below.

[0256] FIG. 18A shows a schematic diagram of an exemplary semiconductor device 1800, including a first pixel 1801, a second pixel 1803, and a third pixel 1815, consistent with some embodiments of the present disclosure. The first pixel 1801 includes a first SPAD cell 1805, the second pixel 1803 includes a second SPAD cell 1807, and the third pixel 1815 includes a third SPAD cell 1817. The first pixel 1801 can be the first pixel 1501, 1601 of the embodiments shown in FIGS. 15 and 16, the first SPAD cell 1805 can be the first SPAD cell 1505, 1605 of the embodiments shown in FIGS. 15 and 16, and the second SPAD cell 1807 can be the second SPAD cell 1507, 1607 of the embodiments shown in FIGS. 15 and 16. As shown in FIG. 18A, the second pixel 1803 includes the second SPAD cell 1807 and a second sub-filter 1813, which can allow light of the second sub-wavelength band wb22 to pass through. The second sub-wavelength band wb22 includes, for example, a wavelength range of green light (e.g., 500-565 nm). The third pixel 1815 includes the third SPAD cell 1817, and no filter is shown in the third pixel 1815, which can receive incident light beams of different wavelengths (i.e., the third wavelength range can include multiple wavelength bands, such as visible light wavelength band, infrared light wavelength band, ultraviolet light wavelength band, etc.), without limitation, and the third pixel 1815 can also include a filter located on a side of the third SPAD cell 1817, in which case the third wavelength range includes a passband range of the filter.

[0257] In the embodiment shown in FIG. 18A, the output signal of the first pixel 1801 can be used to determine a time-of-flight (ToF) to calculate the distance of an obstacle. The output signal of the second pixel 1803 can be used to determine a structured light pattern of a specific color (e.g., green) to determine the position and / or depth information of an object. Since the third wavelength range is larger than the first wavelength range and the second wavelength range, the third SPAD cell of the third pixel 1815 can sense light signals in a wider range, and thus can more accurately determine the brightness of the surrounding environment.

[0258] In addition, in the embodiments shown in FIGS. 15-18A, only one of the first pixel, the second pixel (or the first sub-pixel, the second sub-pixel, the third sub-pixel), and the third pixel is shown, and those skilled in the art can understand that FIGS. 15-18 are only used to schematically illustrate the structure of the semiconductor device of the present disclosure, and do not limit the number of the first pixel, the second pixel, and the third pixel. Embodiments including multiple first pixels, second pixels (or first sub-pixels, second sub-pixels, third sub-pixels), and third pixels in the semiconductor device will be described in detail below.

[0259] FIG. 18B shows a schematic diagram of the arrangement of the plurality of first pixels 1801, the plurality of second pixels 1803 and the plurality of third pixels 1815 in the semiconductor device 1800. As shown in FIG. 18, the plurality of second pixels 1803 includes a first sub-pixel R, a second sub-pixel G and a third sub-pixel B, which are arranged uniformly in the array of the plurality of first pixels 1801 and the plurality of third pixels 1815.

[0260] In the embodiments shown in FIG. 18A and FIG. 18B, the third pixels 1815 can play multiple roles. Firstly, the third pixels 1815 can be used to generate a grayscale image of the surrounding environment (equivalent to a grayscale camera), while in combination with the second pixels 1803, a color pattern of the surrounding environment can be obtained. Secondly, the third pixels 1815 can also be used to sense a structured light pattern, and the third pixels 1815 can further include a filter, the passband of the filter including the light source wavelength of the structured light, so that the third pixels 1815 can constitute a structured light pixel, improving the signal-to-noise ratio of the structured light measurement. Thirdly, in a weak light environment (for example, at night), the third pixels can also perform time-of-flight measurement, providing supplemental measurement for the first pixels, and improving the spatial resolution of the time-of-flight measurement. According to embodiments of the present disclosure, the second wavelength range wb2 is greater than the first wavelength range wb1. For example, the first wavelength range wb1 is, for example, 905 nm ± 5 nm or 905 nm ± 10 nm, and the length of the first wavelength range wb1 is 10 nm or 20 nm, respectively. The second wavelength range wb2 includes, for example, the wavelength range of light of a specific color, for example, the wavelength range of red light is 625-740 nm, the wavelength range of green light is 500-565 nm, and the wavelength range of blue light is 440-485 nm, and the size of the second wavelength range is 115 nm, 165 nm and 45 nm, respectively, all of which are greater than the size of the first wavelength range wb1.

[0261] According to embodiments of the present disclosure, the semiconductor device includes a plurality of first pixels and a plurality of second pixels, and in the plurality of first pixels and the plurality of second pixels, the proportion of the second pixels is greater than or equal to 50% and less than or equal to 90%. The proportion can be the proportion of the number of the second pixels in the total number of pixels, or the proportion of the area of the second pixels in the total pixel area.

[0262] FIG. 19 shows a schematic diagram of an exemplary semiconductor device 1900 including first pixels 1901 and second pixels 1903, where the first pixels 1901 can be the first pixels 1501, 1601 of the embodiments shown in FIGS. 15 and 16, and the second pixels 1903 can be the second pixels 1503, 1603 of the embodiments shown in FIGS. 15 and 16, consistent with some embodiments of the present disclosure. As shown in FIG. 19, the first pixels 1901 and the second pixels 1903 are arranged uniformly with a 50% ratio of the second pixels 1903. In the embodiment shown in FIG. 19, the area of one first pixel 1901 is the same as the area of one second pixel 1903. In other embodiments, the first pixels 1901 and the second pixels 1903 can be configured to have different areas, with a total area ratio of 50% for the first pixels 1901 and 50% for the second pixels 1903.

[0263] FIG. 20 shows a schematic diagram of an exemplary semiconductor device 2000 including first pixels 2001 and second pixels 2003, where the first pixels 2001 can be the first pixels 1501, 1601 of the embodiments shown in FIGS. 15 and 16, and the second pixels 2003 can be the second pixels 1503, 1603 of the embodiments shown in FIGS. 15 and 16, consistent with some embodiments of the present disclosure. As shown in FIG. 20, the first pixels 2001 have a ratio of 16%, and the second pixels 2003 have a ratio of 84%. In the embodiment shown in FIG. 20, the area of one first pixel 2001 is the same as the area of one second pixel 2003. In other embodiments, the first pixels and the second pixels can be configured to have different areas, with a total area ratio of 16% for the first pixels 2001 and 84% for the second pixels 2003.

[0264] According to embodiments of the present disclosure, the ratio of the second pixels can be further increased based on the embodiment shown in FIG. 20. For example, based on the layout of FIG. 20, a layer of second pixels can be further arranged at the periphery of the second pixels 2003 at the edges, forming a 7*7 pixel array, where the ratio of the first pixels is 8.2% (4 / 49 ~ 8.2%), and the ratio of the second pixels will reach 91.8% (45 / 49 ~ 91.8%). By increasing the ratio of the second pixels, the spatial resolution of the grayscale image during structured light measurement can be further improved, satisfying the measurement requirements of the structured light mode. At the same time, since the time-of-flight measurement has relatively low requirements for spatial resolution, even if the ratio of the first pixels is reduced, the measurement requirements of the time-of-flight measurement can still be satisfied.

[0265] In the embodiments shown in FIG. 19 and FIG. 20, the first pixels and the second pixels are interleaved, wherein the output signals of the first pixels are used to calculate the time of flight, and the output signals of the second pixels are used to perform high-precision imaging, determine the structured light pattern, and determine the depth information or surface topography of the target.

[0266] According to one embodiment of the present disclosure, the semiconductor device includes a first region and a second region, the first region is closer to the center of the semiconductor device than the second region, and the proportion of the second pixels in the second region is higher than the proportion of the second pixels in the first region. For example, the inner rectangle and the outer rectangle are shown by the dashed lines in FIG. 20, wherein the first region includes the area of the semiconductor device 2000 within the inner rectangle, and the second region includes the area of the semiconductor device 2000 between the inner rectangle and the outer rectangle, i.e., the edge region of the semiconductor device. In the first region, the proportion of the second pixels 2003 is 55.6%. In the second region, the proportion of the second pixels 2003 is 100%, i.e., the second region is entirely composed of the second pixels. In use, the amount of light incident at the edge position of the semiconductor device is relatively small, and since the second wavelength range corresponding to the second pixels is relatively wide, by arranging more second pixels in the second region close to the edge, the light incident at the edge position can be more fully detected.

[0267] According to an embodiment of the present disclosure, in the semiconductor devices 1900 and 2000 shown in FIG. 19 and FIG. 20, the second pixels 1903 and 2003 can not include a filter, can include a filter, or can include a filter in part of the second pixels, and the passband range of the filter includes the wavelength of the light beam emitted by the structured light projection light source, thereby being able to improve the signal-to-noise ratio of the structured light measurement.

[0268] According to embodiments of the present disclosure, as shown in FIG. 19 and FIG. 20, the plurality of first pixels 1901, 2001 are evenly dispersed in the plurality of second pixels 1903, 2003. In the embodiment of FIG. 19, taking the first pixel 1901 in the middle (which is marked with “D”) as an example, the first pixel 1901 has four second pixels 1903 around it. In the embodiment of FIG. 20, taking one of the first pixels 2001 (which is marked with “D”) as an example, the first pixel 2001 has eight second pixels 2003 around it. By adjusting the distribution of the first pixels and the second pixels, the number and the ratio of the two can also be changed, for example, the first pixel can have 5, 6, 7, or 9 second pixels around it. In addition, those skilled in the art can understand that “around” in some embodiments of the present disclosure includes the adjacent position relationship in the up, down, left, right, top-left, top-right, bottom-left, and bottom-right directions. In other embodiments of the present disclosure, “around” can also represent other position relationships, for example, the adjacent position relationship in the up, down, left, and right directions, and for example, any one or more of the adjacent position relationships in the up, down, left, right, top-left, top-right, bottom-left, and bottom-right directions. In the present disclosure, “adjacent” can mean close or the distance between pixels is less than a threshold value, which can be represented by the number of pixels, for example, 1 pixel, 2 pixels, or other number of pixels.

[0269] In the embodiments of FIG. 19 and FIG. 20, the first pixels 1901 and 2001 are all spaced apart from each other. According to embodiments of the present disclosure, the plurality of first pixels can also be adjacent to each other, forming a first pixel cluster. FIG. 21 shows a schematic diagram of an exemplary semiconductor device 2100 including first pixels 2101 and second pixels 2103, consistent with some embodiments of the present disclosure, where the first pixels 2101 can be the first pixels 1501, 1601 of the embodiments shown in FIG. 15 and FIG. 16, and the second pixels 2103 can be the first pixels 1503, 1603 of the embodiments shown in FIG. 15 and FIG. 16. As shown in FIG. 21, in the semiconductor device 2100 shown in the figure, four first pixel clusters are formed. Taking one of the first pixel clusters as an example (where each first pixel is labeled with “D”), the first pixel cluster includes four first pixels 2101 arranged in a 2*2 arrangement, and the first pixel cluster is surrounded by 12 second pixels 2103. In some embodiments, the plurality of first pixel clusters can all include four first pixels 2101 arranged in a 2*2 arrangement. In some embodiments, each first pixel cluster can include four first pixels 2101 arranged in a 2*2 arrangement. The first pixel cluster can also include a different number of first pixels arranged in a different arrangement, such as two first pixels 2101 arranged in a 1*2 arrangement, or three first pixels 2101 arranged in a 1*3 arrangement, or six first pixels 2101 arranged in a 2*3 arrangement. In addition, in FIG. 21, each first pixel cluster is surrounded by 12 second pixels 2103. In some embodiments, the plurality of first pixel clusters are all surrounded by 12 second pixels 2103. In some embodiments, each first pixel cluster is surrounded by 12 second pixels 2103. Those skilled in the art can also adjust the arrangement of the first pixels 2101 and the second pixels 2103 so that the first pixel cluster is surrounded by 8, 9, 10, 11, or more second pixels 2103. These variations are within the scope of the present disclosure. In addition, in the semiconductor device, the plurality of first pixel clusters can have the same number and the same arrangement of first pixels 2101, as shown in FIG. 21, or can have different numbers and / or different arrangements of first pixels 2101.

[0270] FIGS. 19-21 show various pixel arrangements according to embodiments of the present disclosure. The arrangement of pixels is not limited to the schemes of FIGS. 19-21, and the proportion and arrangement of the first pixels and the second pixels can be adjusted according to actual application requirements. In addition, according to embodiments of the present disclosure, the first pixels can also be adjusted based on the needs of detection. For example, the first pixels are only provided at positions where depth (e.g., distance) detection is needed, and no first pixels or only a small number of first pixels are provided at other positions.

[0271] In the embodiments shown in FIG. 16 and FIG. 17 above, the first SPAD cell 1605 (1705) and the second SPAD cell 1607 (1707) are formed on the same circuit layer. According to embodiments of the present disclosure, they can also be formed on different circuit layers. FIG. 22A shows an unfolded view of an exemplary semiconductor device 2200, and FIG. 22B shows a side view of part of the SPAD cells in the semiconductor device 2200, consistent with some embodiments of the present disclosure, which are described in detail below with reference to FIG. 22A and 22B.

[0272] The semiconductor device 2200 shown in FIG. 22A and 22B includes a plurality of first pixels 2201 and a plurality of second pixels 2203. The first pixels 2201 can be the first pixels 1501 and 1601 of the embodiments shown in FIG. 15 and FIG. 16, and the second pixels 2203 can be the second pixels 1503 and 1603 of the embodiments shown in FIG. 15 and FIG. 16. The first pixels 2201 include first SPAD cells 2207, and the second pixels 2203 include second SPAD cells 2209. As shown in FIG. 22B, the first SPAD cells 2207 are formed on one circuit layer (referred to as “first circuit layer”), and the second SPAD cells 2209 are formed on another circuit layer (referred to as “second circuit layer”). The second circuit layer is stacked on the first circuit layer, and the stacking direction is shown by the arrow R in FIG. 22B. And the projection of the first SPAD cells 2207 and the second SPAD cells 2209 on a plane perpendicular to the stacking direction at least partially overlaps or aligns. In FIG. 22A and 22B, there is one first SPAD cell 2207 under one second SPAD cell 2209. In other embodiments, there can be only a part of the second SPAD cells 2209 under which the first SPAD cells 2207 are arranged. In this way of layering arrangement, at least part of the second pixels 2203 are stacked above the first pixels 2201, and in the overlapping part, both the structured light pattern can be determined by the second pixels and the time of flight can be determined by the first pixels, so that accurate depth (distance) information can be obtained. At the same time, the duty cycle of the second pixels will not be affected by the arrangement of the first pixels, which is conducive to improving the image quality.

[0273] According to embodiments of the present disclosure, as shown in FIG. 22B, the second pixel 2203 further includes a second filter 2215 disposed on one side of the second SPAD cell 2209, the second filter 2215 can allow light of the first wavelength range and the second wavelength range to pass through. As shown in FIG. 22B, the light incident on the second pixel 2203 includes light with a wavelength within the first wavelength range wb1, light with a wavelength within the second wavelength range wb2, and light with the rest of the wavelengths, wherein the second filter 2215 can allow light with a wavelength within the first wavelength range wb1 and the second wavelength range wb2 to pass through and be incident on the second SPAD cell 2209, and light with the rest of the wavelengths will be blocked by the second filter 2215 and cannot be transmitted. The second SPAD cell 2209 senses light of the second wavelength range wb2 and outputs an electrical signal, light with a wavelength within the first wavelength range wb1 will pass through the second SPAD cell 2209 and continue to propagate, and be incident on the first pixel 2201.

[0274] In the embodiment shown in FIG. 22B, the first pixel 2201 can include a first filter 2213 that only allows light with a wavelength within the first wavelength range wb1 to pass through and be incident on the first SPAD cell 2207. Therefore, in the embodiments shown in FIGS. 22A and 8B, at one pixel position, the structure light pattern can be determined by the second pixel, and the time of flight can be determined by the first pixel, and accurate depth (distance) information can be obtained.

[0275] FIG. 23 shows a schematic diagram of an exemplary semiconductor device 2300 including a first pixel 2301, a second pixel 2303, and a third pixel 2315, consistent with some embodiments of the present disclosure. The first pixel 2301 includes a first SPAD cell 2305 that can sense light of a first wavelength range to determine time of flight. The second pixel 2303 includes a second SPAD cell 2307 that can sense light of a second wavelength range to determine a structure light pattern. The third pixel 2315 includes a third SPAD cell 2317 that can sense light of a third wavelength range. The first pixel 2301 can be the first pixel 1501, 1601 of the embodiments shown in FIGS. 15 and 16, the first SPAD cell 2305 can be the first SPAD cell 1505, 1605 of the embodiments shown in FIGS. 15 and 16, and the second SPAD cell 2307 can be the second SPAD cell 1507, 1607 of the embodiments shown in FIGS. 15 and 16.

[0276] In the embodiment shown in FIG. 23, the third pixel 2315 can sense visible light to determine the brightness of the surrounding environment, or can sense a specific color of visible light to determine the intensity of that color of light in the surrounding environment. As shown in FIG. 23, the third pixel 2315 can include a filter 2319 to allow light of a third wavelength range wb3, e.g., including a wavelength range of visible light, to pass through. According to embodiments of the present disclosure, the third wavelength range is greater than the first wavelength range and the second wavelength range.

[0277] In the embodiments described above, the second wavelength range can include a first sub-band, a second sub-band, or a third sub-band, e.g., including a wavelength range of red light, green light, and blue light in visible light, respectively, and the second pixel includes any one of a first sub-pixel (first sub-band), a second sub-pixel (second sub-band), and a third sub-pixel (third sub-band). A similar implementation can also be employed for the third pixel 2315 of the embodiment shown in FIG. 23. According to embodiments of the present disclosure, the third wavelength range wb3 includes a first sub-band, a second sub-band, or a third sub-band, e.g., corresponding to a wavelength range of red light, green light, and blue light in visible light, respectively, where the wavelength range of red light is 625-740 nm, the wavelength range of green light is 500-565 nm, and the wavelength range of blue light is 440-485 nm. In other embodiments, the third wavelength range can include more or less sub-bands, and the sub-bands can correspond to wavelength ranges of other colors of visible light. Correspondingly, the third pixel 2305 includes any one of a fourth sub-pixel, a fifth sub-pixel, and a sixth sub-pixel, where the fourth sub-pixel includes a fourth sub-filter that can allow light of the first sub-band to pass through, the fifth sub-pixel includes a fifth sub-filter that can allow light of the second sub-band to pass through, and the sixth sub-pixel includes a sixth sub-filter that can allow light of the third sub-band to pass through.

[0278] In the embodiment of FIG. 23, the first SPAD cell 2305, the second SPAD cell 2307, and the third SPAD cell 2317 are formed on the same circuit layer. They can also be formed on different circuit layers, e.g., the second SPAD cell and the third SPAD cell are formed on the same circuit layer, and the first SPAD cell is formed on a different circuit layer, similar to the cases shown in FIGS. 22A and 22B. FIG. 24 shows a side view of a portion of a SPAD cell in an exemplary semiconductor device 2400, consistent with some embodiments of the present disclosure. Details are described below with reference to FIG. 24.

[0279] The semiconductor device 2400 shown in FIG. 24 includes a plurality of first pixels 2401, a plurality of second pixels 2403, and a plurality of third pixels 2415. The first pixels 2401 can be the first pixels 1501 of the embodiment shown in FIG. 15, the second pixels 2403 can be the second pixels 1503 of the embodiment shown in FIG. 15, and the third pixels 2415 can be the third pixels 2315 of the embodiment shown in FIG. 23. The first pixels 2401 include first SPAD cells 2405, the second pixels 2403 include second SPAD cells 2407, and the third pixels 2415 include third SPAD cells 2407. Those skilled in the art can understand that, for the sake of clarity, the optical filters are not shown in FIG. 24. The optical filters can be provided or omitted in the first pixels 2401, the second pixels 2403, and the third pixels 2415 as needed.

[0280] As shown in FIG. 24, the first SPAD cells 2405 are formed on one circuit layer (referred to as a “first circuit layer”), and the second SPAD cells 2407 and the third SPAD cells 2417 are formed on another circuit layer (referred to as a “second circuit layer”), wherein the second circuit layer is stacked on the first circuit layer in a stacking direction as shown by the arrow R in FIG. 24. And the projection of the first SPAD cells 2405 on a plane perpendicular to the stacking direction at least partially overlaps with at least one of the second SPAD cells 2407 and the third SPAD cells 2417. In FIG. 24, there is a first SPAD cell 2405 under one second SPAD cell 2407 and one third SPAD cell 2417. In other embodiments, the first SPAD cells 2405 can be provided only under a portion of the second SPAD cells 2407 and the third SPAD cells 2417. In this way of layering arrangement, at the overlapping pixel position, both the second pixel and the third pixel can determine the structured light pattern or the color information or the light intensity information, and the first pixel can determine the time of flight, so that accurate depth (distance) information can be obtained. At the same time, the duty cycle of the second pixel and the third pixel will not be affected by the first pixel, which is beneficial to improve the image quality.

[0281] In addition, although the first pixels, the second pixels, and the third pixels are shown as being the same size in FIGS. 15-24, the disclosure does not limit the size relationship of the three types of pixels.

[0282] The disclosure also provides a sensing device applying the semiconductor device as described above. FIG. 25 shows a sensing device 2500 consistent with some embodiments of the disclosure. The following describes in detail with reference to FIG. 25.

[0283] As shown in FIG. 25, the sensing device 2500 includes a semiconductor device 2501 and a data processing device 2503. The semiconductor device 2501 can be any one of the semiconductor devices 1500, 1600, 1700, 1800, 1900, 2000, 2100, 2200, 2300, or 2400 as described above.

[0284] The data processing device 2503 can receive signals output by the first pixel and the second pixel of the semiconductor device to determine information of the surrounding environment. In some embodiments, the data processing device 2503 can include a control circuit, a central processing unit (CPU), a micro control unit (MCU), a digital signal processor (DSP), other general purpose processors, an application specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a complex programmable logic device (CPLD) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, etc.

[0285] According to embodiments of the present disclosure, the data processing device 2503 can determine a time of flight according to the signals output by the first pixel, and determine a structured light pattern according to the signals output by the second pixel.

[0286] Figure 26 illustrates a sensing device 2600 consistent with some embodiments of the present disclosure. The sensing device 2600 comprises a semiconductor device 2601, which is similar to the semiconductor device 2501 of the embodiment shown in Figure 25, and a data processing device 2603, which is similar to the data processing device 2503 of the embodiment shown in Figure 25. The sensing device 2600 further comprises a first light source 2605 and a second light source 2607. The first light source 2605 can emit a first light beam L1, which has a wavelength within the first wavelength range wb1. The data processing device 2603 can determine the time of flight based on a time of emission of the first light beam L1 and a time of reception of light of the first wavelength range by the first pixel of the semiconductor device 2601. In some embodiments, the data processing device 2603 is coupled to the first light source 2605 so as to be able to determine or obtain the time of emission of the first light beam L1. The data processing device 2603 is coupled to the semiconductor device 2601 so as to be able to determine the time of reception of light of the first wavelength range from a signal output by the first pixel of the semiconductor device 2601. From the time difference between the time of reception and the time of emission, the time of flight ToF can be determined. Further, the data processing device 2603 can determine distance information, i.e. depth information, of the obstacle from a product of half of the time of flight ToF and the speed of light c.

[0287] The second light source 2607 can emit a second light beam L2, which has a wavelength within the second wavelength range wb2. The data processing device can determine the structured light pattern from a signal output by the second pixel. In some embodiments, the second light beam L2 can comprise a continuous wave light beam or a pulsed light beam.

[0288] In the embodiment of Figure 26, the sensing device 2600 comprises a first light source 2605 and a second light source 2607 for emitting the first light beam L1 and the second light beam L2, respectively. It is also possible that the first light beam L1 and the second light beam L2 are emitted by a common light source. This is described below with reference to Figure 27. In some embodiments, the first light source and the second light source can comprise an emission circuit, a vertical-cavity surface-emitting laser (VCSEL), an edge-emitting laser (EEL), a distributed feedback laser (DFB), a fiber laser or a similar device.

[0289] Figure 27 shows a sensing device 2700 consistent with some embodiments of the present disclosure. The sensing device 2700 comprises a semiconductor device 2701, which is the same as the semiconductor device 2501 of the embodiment shown in Figure 25, and a data processing device 2703, which is the same as the data processing device 2503 of the embodiment shown in Figure 25. The sensing device 2700 further comprises a third light source 2705.

[0290] The third light source 2705 can emit a first light beam L1 and a second light beam L2, the first light beam L1 having a wavelength within the first wavelength range wb1, and the second light beam L2 having a wavelength within the second wavelength range wb2. According to embodiments of the present disclosure, the third light source can be a modulatable laser, which can selectively emit continuous wave or pulsed light.

[0291] The data processing device 2703 can determine the time of flight based on a time of emission of the first light beam L1 and a time of reception of light of the first wavelength range by the first pixel. The processing device 2703 can determine the structured light pattern from the signal output by the second pixel, which is the same as or similar to that described with reference to the embodiment shown in Figure 26, and will not be described again here.

[0292] According to embodiments of the present disclosure, the difference between the wavelength of the first light beam L1 and the wavelength of the second light beam L2 is within a preset range. The wavelength of the first light beam L1 and the wavelength of the second light beam L2 are, for example, the same, or differ by within a range of 5 nm, or differ by within a range of 10 nm, 15 nm or 20 nm.

[0293] According to embodiments of the present disclosure, when the wavelength of the first light beam L1 and the wavelength of the second light beam L2 are the same or close, the structured light measurement and the time of flight measurement can be performed asynchronously. In addition, the output of the first pixel can also be used to supplement or enhance the structured light measurement of the second pixel. Specifically, since the wavelength of the first light beam L1 and the wavelength of the second light beam L2 are the same or close, the first pixel can also sense the light pattern projected by the structured light, and when generating the structured light grayscale image based on the second pixel, the output of the first pixel can be combined to further improve the spatial resolution of the structured light grayscale image.

[0294] According to embodiments of the present disclosure, the difference between the wavelength of the first light beam L1 and the wavelength of the second light beam L2 is greater than a preset threshold. At this time, the structured light measurement and the time of flight measurement can be performed synchronously, further improving the acquisition frequency of the structured light image and the time of flight measurement. According to embodiments of the present disclosure, the third light source 2705 comprises, for example, a tunable laser, which can emit a laser beam having a wavelength that can be adjusted within a certain range, so as to emit the first light beam L1 and the second light beam L2.

[0295] According to an embodiment of the present disclosure, the data processing apparatus 2703 can generate image data in pixel units, i.e., the first pixel and the second pixel correspond to one pixel in the image data. According to another embodiment of the present disclosure, the data processing apparatus 2703 can generate image data in macro-pixel units, wherein a macro-pixel comprises a first pixel and a second pixel. The data processing apparatus 2703 determines the time-of-flight information of the macro-pixel according to the output signal of the first pixel, and determines the structured light pattern information of the macro-pixel according to the output signal of the second pixel. In this way, the gray scale information and the depth information of one macro-pixel can be obtained simultaneously, and the time-of-flight measurement mode and the structured light measurement mode can be adapted simultaneously.

[0296] FIG. 28 shows the arrangement of macro-pixels according to some embodiments of the present disclosure. In FIG. 28, macro-pixels PX11, PX12, PX13, PX21 are shown, each of which comprises a first pixel and a second pixel. The data processing apparatus 2703 can determine the time-of-flight information of a macro-pixel according to the output signal of the first pixel in the macro-pixel, and determine the structured light pattern information of the macro-pixel according to the output signal of the second pixel.

[0297] According to an embodiment of the present disclosure, a macro-pixel can switch between a first mode (e.g., a time-of-flight measurement mode) and a second mode (e.g., a structured light measurement mode). In the first mode, the processing apparatus determines a depth value based at least on the output signal of the first pixel of the macro-pixel. In the second mode, the processing apparatus determines a depth value based at least on the output signal of the second pixel of the macro-pixel.

[0298] According to an embodiment of the present disclosure, when the depth value determined based at least on the output signal of the first pixel is lower than a first threshold value, the processing apparatus switches the macro-pixel to the second mode. When the depth value determined based at least on the output signal of the second pixel is greater than a second threshold value, the processing apparatus can switch the macro-pixel to the first mode. According to another embodiment of the present disclosure, the mode of other macro-pixels can also be switched according to the output of one macro-pixel. For example, when the depth value determined according to the output signal of the first pixel of one macro-pixel is lower than a first threshold value, the adjacent macro-pixel is switched to the second mode; when the depth value determined according to the output signal of the first pixel of one macro-pixel is greater than a second threshold value, the adjacent macro-pixel is switched to the first mode.

[0299] In this way, the macro-pixel can switch between a first mode (e.g., a time-of-flight measurement mode) and a second mode (e.g., a structured light measurement mode). When the object is close, the macro-pixel switches to the structured light measurement mode, which is good at measuring depth at close distances. When the object is far, the macro-pixel switches to the time-of-flight measurement mode, which is good at measuring depth at medium and far distances. Thus, embodiments of the present disclosure combine the advantages of the time-of-flight ranging mode and the structured light ranging mode.

[0300] According to embodiments of the present disclosure, the sensing device can also switch between a first mode (e.g., a time-of-flight measurement mode) and a second mode (e.g., a structured light measurement mode). In the first mode, the processing device determines a depth value based at least on the output signal of the first pixel; in the second mode, the processing device determines a depth value based at least on the second pixel. According to embodiments of the present disclosure, when the depth value determined based at least on the output signal of the first pixel is below a first threshold, the processing device switches the macro-pixel to the second mode. According to embodiments of the present disclosure, when the depth value determined based at least on the output signal of the second pixel is greater than a second threshold, the processing device can switch the macro-pixel to the first mode.

[0301] According to an aspect of the present disclosure, some embodiments of the present disclosure provide a sensing device. The sensing device includes a first pixel, a second pixel, and a voltage source. The first pixel includes a first SPAD unit, which can sense light in a first wavelength range to measure depth. The second pixel includes a second SPAD unit, which can sense light in a second wavelength range. The first SPAD unit and the second SPAD unit each include one or more SPADs. The voltage source is coupled to the first SPAD unit and the second SPAD unit, and can apply a first bias voltage to the SPADs of the first SPAD unit and a second bias voltage to the SPADs of the second SPAD unit. The first bias voltage is different from the second bias voltage.

[0302] Through the sensing device including SPADs according to embodiments of the present disclosure, depth information can be measured by the first pixel, and other information of the surrounding environment, including but not limited to color information, light intensity information, etc., can be sensed by the second pixel. By making the first bias voltage different from the second bias voltage, the overall power consumption and heat of the sensing device can be effectively controlled while meeting the measurement requirements. Details are described below with reference to the accompanying drawings.

[0303] FIG. 29A shows a schematic diagram of an exemplary sensing device 2900 according to some embodiments of the present disclosure, and FIG. 29B shows a schematic diagram of a first pixel and a second pixel in the sensing device 2900.

[0304] As shown in FIG. 29A, the sensing device 2900 includes a first pixel 2901, a second pixel 2903, and a voltage source 2905. The voltage source 2905 is coupled to the first pixel 2901 and the second pixel 2903, thereby providing operating voltages for the first pixel 2901 and the second pixel 2903.

[0305] As shown in FIG. 29B, the first pixel 2901 includes a first SPAD cell 2907, and the second pixel 2903 includes a second SPAD cell 2909. The first SPAD cell 2907 can sense light in a first wavelength range for measuring depth. The second SPAD cell 2909 can sense light in a second wavelength range. The first SPAD cell 2907 or the second SPAD cell 2909 includes one or more SPADs. In FIG. 29B, the first SPAD cell 2907 and the second SPAD cell 2909 are shown to include a 3*3 SPAD array, but the present disclosure is not limited thereto. The first SPAD cell 2907 or the second SPAD cell 2909 can also include one SPAD, or other row and column numbers of SPAD arrays, such as 1*3, 2*3, 2*4, 2*5, and other row and column numbers of SPAD arrays. In addition, the first SPAD cell 2907 and the second SPAD cell 2909 can have the same row and column numbers of SPAD arrays, or different row and column numbers of SPAD arrays.

[0306] The number of SPADs in the first SPAD cell 2907 and the second SPAD cell 2909 can be determined according to system requirements. For example, when it is necessary to improve the dynamic range, the number of SPADs in the SPAD cell can be increased, and the output of multiple SPADs is used to determine the light signal incident on the SPAD cell, so that a clear response signal can be obtained in a weak light environment, thereby improving the dynamic range of the SPAD cell. When it is necessary to improve the spatial resolution, the number of SPADs in the SPAD cell can be reduced, thereby reducing the pixel size and improving the spatial resolution.

[0307] As shown in FIG. 29A and FIG. 29B, the voltage source 2905 is coupled to the first SPAD cell 2907 of the first pixel 2901 and the second SPAD cell 2909 of the second pixel 2903, and can apply a first bias voltage Vb1 to the SPADs of the first SPAD cell 2907 and a second bias voltage Vb2 to the SPADs of the second SPAD cell 2909. The first bias voltage Vb1 is different from the second bias voltage Vb2. The first bias voltage Vb1 can be greater than the second bias voltage Vb2, or can be less than the second bias voltage Vb2. Different embodiments of the present disclosure will be described in detail below.

[0308] Figure 30 shows a schematic diagram of an exemplary sensing device 31000, including a first pixel 3001 and a second pixel 3003, consistent with some embodiments of the present disclosure. The first pixel 3001 includes a first SPAD cell 3007, and the second pixel 3003 includes a second SPAD cell 3009. The first pixel 3001 can be the first pixel 2901 of the embodiments shown in Figures 29A and 29B, and the second pixel 3003 can be the second pixel 2903 of the embodiments shown in Figures 29A and 29B, the first SPAD cell 3007 can be the first SPAD cell 2907 of the embodiments shown in Figures 29A and 29B, and the second SPAD cell 3009 can be the second SPAD cell 2909 of the embodiments shown in Figures 29A and 29B.

[0309] As shown in FIG. 30, according to an embodiment of the present disclosure, the first pixel 3001 further comprises a first filter 3011 disposed on one side of the first SPAD cell 3007. The first filter 3011 is disposed on the side of the first SPAD cell 3007 that receives the incident light beam. The first filter 3011 can allow light in the first wavelength range wb1 to pass and be incident on the first SPAD cell 3007. As shown in FIG. 30, the light incident on the first pixel 3001 includes light with wavelengths in the first wavelength range wb1 and light with wavelengths outside the first wavelength range wb1, wherein the first filter 3011 can only allow light with wavelengths in the first wavelength range wb1 to pass and be incident on the first SPAD cell 3007, and light with wavelengths outside the first wavelength range wb1 will be blocked by the first filter 3011 and cannot be transmitted. The first SPAD cell 3007 senses the light in the first wavelength range wb1 and outputs an electrical signal, which can be used to determine the time of flight (ToF). The first wavelength range is, for example, 905 nm ± 5 nm, or 905 nm ± 10 nm, or 905 nm ± 40 nm, or 905 nm ± 60 nm, or 905 nm ± 100 nm, or 1550 nm ± 5 nm, or 1550 nm ± 10 nm, or 1550 nm ± 40 nm, or 1550 nm ± 60 nm, or 1550 nm ± 100 nm. When the exemplary sensing device 31000 shown in FIG. 30 is used for a laser radar, the first wavelength range can be determined according to the wavelength of the probe light beam of the laser radar. For example, when the laser radar uses a probe light beam with a wavelength of 905 nm, the first wavelength range is, for example, 905 nm ± 5 nm, or 905 nm ± 10 nm, or 905 nm ± 40 nm, or 905 nm ± 60 nm, or 905 nm ± 100 nm, so that the first SPAD cell 3007 of the first pixel 3001 only receives the echoes containing the first wavelength range of the probe light beam of the laser radar, and light beams with other wavelengths outside the first wavelength range will be blocked by the first filter 3011, thereby improving the signal-to-noise ratio of the detection signal of the laser radar. When used for a laser radar, the distance of the obstacle in the environment can be determined by determining the time difference between the time when the first pixel 3001 receives the echo and the time when the laser radar emits the probe light beam.

[0310] As understood by those skilled in the art, “allowing” to pass or transmit in the context of the present disclosure means that the transmittance of light in a certain wavelength range is greater than a predetermined threshold, for example, 99%, 95%, 90%, 85%, 80%, or 70%. Similarly, “blocking” in the context of the present disclosure means that the transmittance of light in a certain wavelength range is less than a predetermined threshold, for example, 1%, 5%, 10%, 15%, 20%, or 30%.

[0311] In addition, those skilled in the art can understand that the first filter 3011 shown in FIG. 30 can be omitted. In the case of omitting the first filter 3011, the time of flight can also be determined. For example, when the first filter 3011 is omitted, the time of flight can be determined based on the signal output by the first SPAD unit 3007 to determine the distance of the obstacle during a period when the ambient light is relatively weak, such as at night. In addition, when the first filter 3011 is omitted, the subsequent signal processing circuit can also filter the signal output by the first SPAD unit 3007 to filter out the component of ambient light, thereby obtaining an effective echo signal.

[0312] As shown in FIG. 30, according to an embodiment of the present disclosure, the second pixel 3003 includes a second filter 3013 disposed on one side of the second SPAD unit 3009, for example, on the side of the second SPAD unit 3009 that receives the incident light beam. The second filter 3013 can allow light having a wavelength in a second wavelength range to pass and be incident on the second SPAD unit 3009. As shown in FIG. 30, the light incident on the second pixel 3003 includes light having a wavelength within the second wavelength range wb2 and light having a wavelength outside the second wavelength range wb2, wherein the second filter 3013 can only allow light having a wavelength within the second wavelength range wb2 to pass and be incident on the second SPAD unit 3009, and light having a wavelength outside the second wavelength range wb2 will be blocked by the second filter 3013 and cannot be transmitted. According to an embodiment of the present disclosure, the second wavelength range can be a wavelength range of one or more colors of visible light, or a wavelength range including multiple colors of visible light, so that the second SPAD unit 3009 of the second pixel 3003 can sense the brightness of the environment. Specific embodiments will be described in detail later. In addition, the second wavelength range of the present disclosure is not limited to one or more of the wavelength ranges of red, green, and blue, and other wavelength ranges can be used, such as a custom color filter array (CFA) to achieve multispectral imaging.

[0313] In addition, although not shown in FIG. 30, those skilled in the art can understand that the sensing device 31000 also includes a voltage source that is the same as or similar to the voltage source 2905 shown in the embodiment shown in FIG. 29, which is coupled to the first SPAD unit 3007 of the first pixel 3001 and the second SPAD unit 3009 of the second pixel 3003, and can apply a first bias voltage Vb1 to the SPAD of the first SPAD unit 3007 and a second bias voltage Vb2 to the SPAD of the second SPAD unit 3009, wherein the first bias voltage Vb1 is different from the second bias voltage Vb2.

[0314] FIG. 31 shows a schematic diagram of an exemplary sensing device 3100 including a first pixel 3101 and a second pixel 3103, consistent with some embodiments of the present disclosure. The first pixel 3101 includes a first SPAD cell 3107, and the second pixel 3103 includes a second SPAD cell 3109. The first pixel 3101 can be the first pixel 3001 in the embodiments shown in FIGS. 29A, 29B, and 30, the first SPAD cell 3107 can be the first SPAD cell 2907, 3007 in the embodiments shown in FIGS. 29A, 29B, and 30, and the second SPAD cell 3109 can be the second SPAD cell 3009, 2909 in the embodiments shown in FIGS. 29A, 29B, and 30.

[0315] As shown in FIG. 31, according to embodiments of the present disclosure, the filter of the second pixel 3103 can be omitted, so that incident light of multiple wavelengths can reach the second SPAD cell 3109. In this case, the second wavelength range can include multiple wavelength bands, such as visible light band, infrared light band, ultraviolet light band, etc. In the embodiment shown in FIG. 31, the second pixel 3103 does not include a filter, and the second SPAD cell 3109 is capable of receiving light beams of different wavelengths, so that the second SPAD cell 3109 of the second pixel 3103 is capable of capturing more photons and obtaining higher detection efficiency in a weak light environment. In addition, the output signal of the second pixel 3103 can directly reflect the total intensity of incident light and the light intensity change in the scene.

[0316] The sensing device 3100 shown in FIG. 31 also includes a voltage source not shown. The voltage source is coupled to the first SPAD cell 3107 of the first pixel 3101 and the second SPAD cell 3109 of the second pixel 3103, and can apply a first bias voltage Vb1 to the SPAD of the first SPAD cell 3107 and a second bias voltage Vb2 to the SPAD of the second SPAD cell 3109, wherein the first bias voltage Vb1 is different from the second bias voltage Vb2.

[0317] FIG. 32 shows a schematic diagram of an exemplary sensing device 3200 including a first pixel and a second pixel, consistent with some embodiments of the present disclosure. The first pixel includes a first SPAD cell including a first SPAD 3215. The second pixel includes a second SPAD cell including a second SPAD 3217. The first pixel can be the first pixel 2901, 3001 of the embodiments shown in FIGS. 29A, 29B, and 30, and the second pixel can be the second pixel 2903, 3003 of the embodiments shown in FIGS. 29A, 29B, and 30, the first SPAD cell can be the first SPAD cell 2907, 3007 of the embodiments shown in FIGS. 29A, 29B, and 30, and the second SPAD cell can be the second SPAD cell 2909, 3009 of the embodiments shown in FIGS. 29A, 29B, and 30.

[0318] The first SPAD 3215 and the second SPAD 3217 are shown in FIG. 32 by way of example. The same applies to cases where the first SPAD cell and the second SPAD cell include multiple SPADs.

[0319] A SPAD can be simplified in circuitry to the form of a photodiode, which is placed under the action of a reverse bias voltage (i.e., the voltage of the cathode of the photodiode is higher than the voltage of the anode) when detecting photons, and the reverse bias voltage is greater than the avalanche breakdown voltage, so that an avalanche effect can be generated when receiving incident photons.

[0320] As shown in FIG. 32, the voltage source includes a first voltage source 3219, a second voltage source 3221, a third voltage source 3223, and a fourth voltage source 3225. A first end (e.g., anode or cathode) of the first SPAD 3215 of the first SPAD cell is coupled to the first voltage source 3219, and the voltage thereof is U1. A second end (e.g., cathode or anode) of the first SPAD 3215 of the first SPAD cell is coupled to the second voltage source 3221, and the voltage thereof is U2. A first end (e.g., anode or cathode) of the second SPAD 3217 of the second SPAD cell is coupled to the third voltage source 3223, and the voltage thereof is U3. A second end (e.g., cathode or anode) of the second SPAD 3217 of the second SPAD cell is coupled to the fourth voltage source 3225, and the voltage thereof is U4.

[0321] In the embodiment shown in FIG. 32, the voltage source applies a first bias voltage Vb1 = U2 - U1 to the first SPAD 3215 of the first SPAD cell, and a second bias voltage Vb2 = U4 - U3 to the second SPAD 3217 of the second SPAD cell.

[0322] According to embodiments of the present disclosure, the first bias voltage Vb1 can be made different from the second bias voltage Vb2 in different ways, including at least one of the following:

[0323] The voltage U1 of the first voltage source 3219 is different from the voltage U3 of the third voltage source 3223.

[0324] The voltage U2 of the second voltage source 3221 is different from the voltage U4 of the fourth voltage source 3225.

[0325] According to embodiments of the present disclosure, the first voltage source 3219 and the third voltage source 3223 can be the same, i.e., the voltage U1 and the voltage U3 are equal. In this case, the voltage U2 of the second voltage source 3221 is different from the voltage U4 of the fourth voltage source 3225.

[0326] According to embodiments of the present disclosure, as shown in FIG. 32, the first SPAD 3215 of the first SPAD unit and the second SPAD 3217 of the second SPAD unit are respectively coupled to the second voltage source and the fourth voltage source through quenching resistors and switches. In FIG. 32, the second end (e.g., cathode or anode) of the first SPAD 3215 of the first SPAD unit is coupled to the second voltage source 3221 through a quenching resistor R1 and a switch K1, where the switch K1 is used to control whether the voltage U2 of the second voltage source 3221 is applied to the second end (e.g., cathode or anode) of the first SPAD 3215 of the first SPAD unit. When the switch K1 is turned on, the voltage U2 of the second voltage source 3221 is applied to the second end (e.g., cathode or anode) of the first SPAD 3215 of the first SPAD unit through the quenching resistor R1, and the first SPAD 3215 works in the Geiger state, so that it can make an avalanche response to the photons incident thereon. When the switch K1 is turned off, the voltage U2 of the second voltage source 3221 is disconnected from the second end (e.g., cathode or anode) of the first SPAD 3215 of the first SPAD unit, and the first SPAD 3215 cannot work in the reverse bias state, so it cannot make an avalanche response to the photons incident thereon.

[0327] According to embodiments of the present disclosure, as shown in FIG. 32, an output signal S1 (e.g., a voltage signal) is led out from the second end (e.g., cathode or anode) of the first SPAD 3215 of the first SPAD unit. When the first SPAD 3215 works in the Geiger state, the photons incident thereon will trigger an avalanche effect and generate a current, the current flows through the quenching resistor R1, the output signal S1 will change, and the current will generate a voltage drop on the quenching resistor R1, so that the bias voltage across the first SPAD 3215 is reduced below the breakdown voltage, and the avalanche process is quenched.

[0328] Similarly, the second SPAD 3217 of the second SPAD cell is coupled to the fourth voltage source 3225 through the quenching resistor R2 and the switch K2. The switch K2 is used to control whether the voltage U4 of the fourth voltage source 3225 is applied to the second end (e.g., cathode or anode) of the second SPAD 3217 of the second SPAD cell. When the switch K2 is on, the voltage U4 of the fourth voltage source 3225 is applied to the second end (e.g., cathode or anode) of the second SPAD 3217 of the second SPAD cell through the quenching resistor R2, and the second SPAD 3217 works in the Geiger mode, so that it can make an avalanche response to the photons incident thereon. When the switch K2 is off, the voltage U4 of the fourth voltage source 3225 is disconnected from the second end (e.g., cathode or anode) of the second SPAD 3217 of the second SPAD cell, and the second SPAD 3217 cannot work in the reverse bias state, so it cannot make an avalanche response to the photons incident thereon. As shown in FIG. 32, an output signal S2 (e.g., a voltage signal) is led out from the second end (e.g., cathode or anode) of the second SPAD 3217 of the second SPAD cell. When the second SPAD 3217 works in the Geiger mode, the photons incident thereon will trigger an avalanche effect and generate a current, the current flows through the quenching resistor R2, the output signal S2 will change, and the current will generate a voltage drop on the quenching resistor R2, so that the bias voltage across the second SPAD 3217 is reduced below the breakdown voltage, and the avalanche process is quenched.

[0329] In the embodiments shown in FIGS. 29-32, only one first pixel and one second pixel are shown, and those skilled in the art can easily understand that FIGS. 29-32 are only used to schematically illustrate the structure of the sensing device of the present disclosure, and do not limit the number of the first pixels and the second pixels. Embodiments including multiple first pixels and multiple second pixels in the sensing device will be described in detail below.

[0330] FIGS. 33A and 33B show schematic diagrams of an exemplary sensing device 3300 including a first pixel 3301 and a second pixel 3303, consistent with some embodiments of the present disclosure. The first pixel 3301 can be the first pixel 2901, 3001 of the embodiments shown in FIGS. 29 and 30, and the second pixel 3303 can be the second pixel 2903, 3003 of the embodiments shown in FIGS. 29 and 30. FIG. 33A shows a schematic diagram of one arrangement of the first pixel 3301 and the second pixel 3303 in the sensing device 3300. As shown in FIG. 33A, the sensing device 3300 includes a plurality of first pixels 3301 and a plurality of second pixels 3303, wherein the first pixels 3301 are uniformly arranged in an array of the second pixels 3303.

[0331] In the embodiment shown in FIG. 33A, taking one first pixel 3301 in the middle as an example, which is marked with "D", the first pixel 3301 is surrounded by eight second pixels 3303. In the embodiment shown in FIG. 33A, taking one second pixel 3303 in the middle as an example, which is marked with "C1", the second pixel 3303 is surrounded by four first pixels 3301. Taking another second pixel 3303 in the middle as an example, which is marked with "C2", the second pixel 3303 is surrounded by two first pixels 3301

[0332] In addition, those skilled in the art can understand that "surrounded by" in some embodiments of the present disclosure includes the adjacent positional relationship in the up, down, left, right, upper left, lower left, upper right, and lower right directions. In other embodiments of the present disclosure, "surrounded by" can also represent other positional relationships, for example, the adjacent positional relationship in the up, down, left, and right directions, and for example, any one or more of the adjacent positional relationships in the up, down, left, right, upper left, lower left, upper right, and lower right directions. In the present disclosure, "adjacent" can mean close or the distance between pixels is less than a threshold value, which can be represented by the number of pixels, for example, 1 pixel, 2 pixels, or other number of pixels.

[0333] In the embodiment shown in FIG. 33B, taking one first pixel 3301 in the middle as an example, which is marked with "D", the first pixel 3301 is surrounded by four second pixels 3303, and taking one second pixel 3303 as an example, which is marked with "C", the second pixel 3303 is surrounded by four first pixels 3301.

[0334] FIGS. 33A and 33B only show two possible arrangements of the first pixels 3301 and the second pixels 3303. By adjusting the distribution of the first pixels and the second pixels, the number and ratio relationship between the two can also be changed, for example, the first pixel can be surrounded by 5, 6, or 7 second pixels, and the second pixel can be surrounded by 3, 5 first pixels. The arrangement of the pixels is not limited to the scheme of FIGS. 33A-33B, and the arrangement of the first pixels and the second pixels can be adjusted according to the actual application requirements. In addition, according to the embodiments of the present disclosure, the arrangement of the first pixels can also be adjusted based on the needs of detection. For example, the first pixels are only arranged at positions where depth (distance) detection is needed, and no first pixels or only a small number of first pixels are arranged at other positions.

[0335] In the embodiments shown in FIG. 30 and FIG. 31 above, the first SPAD cell 3007 (or 3107) and the second SPAD cell 3009 (or 3109) are formed on the same circuit layer. According to embodiments of the present disclosure, they can also be formed on different circuit layers. FIG. 34A shows an unfolded view of an exemplary sensing device 3400 consistent with some embodiments of the present disclosure, and FIG. 34B shows a side view of part of the SPAD cells in the sensing device 3400, which are described in detail below with reference to FIG. 34A and 34B.

[0336] The sensing device 3400 shown in FIG. 34A and 34B includes a plurality of first pixels 3401 and a plurality of second pixels 3403. The first pixels 3401 can be the first pixels 2901 and 3001 of the embodiments shown in FIG. 29 and FIG. 30, and the second pixels 3403 can be the second pixels 2903 and 3003 of the embodiments shown in FIG. 29 and FIG. 30. The first pixels 3401 include first SPAD cells 3407. The second pixels 3403 include second SPAD cells 3409. As shown in FIG. 34B, the first SPAD cells 3407 are formed on one circuit layer (referred to as “first circuit layer”), and the second SPAD cells 3409 are formed on another circuit layer (referred to as “second circuit layer”). The second circuit layer is stacked on the first circuit layer in the stacking direction shown by the arrow R in FIG. 34B. And the projection of the first SPAD cells 3407 and the second SPAD cells 3409 on a plane perpendicular to the stacking direction at least partially overlaps or aligns. In FIG. 34A and 34B, there is one first SPAD cell 3407 under one second SPAD cell 3409. In other embodiments, there can be only a part of the second SPAD cells 3409 under which the first SPAD cells 3407 are arranged. In this way of stacking arrangement, at least part of the second pixels 3403 are stacked above the first pixels 3401, and in the overlapping part, both the light intensity or color information can be determined by the second pixels and the time of flight can be determined by the first pixels, so that accurate depth (distance) information can be obtained. At the same time, the duty cycle of the second pixels will not be affected by the arrangement of the first pixels, which is beneficial to improve the image quality.

[0337] According to embodiments of the present disclosure, as shown in FIG. 34B, the second pixel 3403 further includes a second filter 3413 disposed on one side of the second SPAD cell 3409, and the second filter 3413 can allow light of the first wavelength range and the second wavelength range to pass through. As shown in FIG. 34B, the light incident on the second pixel 3403 includes light with a wavelength within the first wavelength range wb1, light with a wavelength within the second wavelength range wb2, and light with other wavelengths, wherein the second filter 3413 can allow light with a wavelength within the first wavelength range wb1 and the second wavelength range wb2 to pass through and be incident on the second SPAD cell 3409, and light with other wavelengths will be blocked by the second filter 3413 and cannot be transmitted. The second SPAD cell 3409 senses light of the second wavelength range wb2 and outputs an electrical signal, and light with a wavelength within the first wavelength range wb1 will continue to propagate through the second SPAD cell 3409 and be incident on the first pixel 3401.

[0338] In the embodiment shown in FIG. 34B, the first pixel 3401 includes a first filter 3411 that only allows light with a wavelength within the first wavelength range wb1 to pass through and be incident on the first SPAD cell 3407. Therefore, in the embodiments shown in FIGS. 34A and 34B, at one pixel position, the light intensity or color pattern can be determined by the second pixel, and the time of flight can be determined by the first pixel, and accurate depth (e.g., distance) information can be obtained.

[0339] According to embodiments of the present disclosure, the second wavelength range includes a first sub-band, a second sub-band, or a third sub-band. The first sub-band, the second sub-band, and the third sub-band, for example, respectively include wavelength ranges of red light, green light, and blue light in visible light, wherein the wavelength range of red light is 625-740 nm, the wavelength range of green light is 500-565 nm, and the wavelength range of blue light is 440-485 nm. In other embodiments, the second wavelength range can include more or fewer sub-bands, and the sub-bands can correspond to wavelength ranges of other colors of visible light. Correspondingly, the second pixel includes any one of a first sub-pixel, a second sub-pixel, and a third sub-pixel, wherein the first sub-pixel includes a first sub-filter that allows light of the first sub-band to pass through; the second sub-pixel includes a second sub-filter that can allow light of the second sub-band to pass through; and the third sub-pixel includes a third sub-filter that can allow light of the third sub-band to pass through. As an example, R will be used to represent the first sub-pixel, G will be used to represent the second sub-pixel, and B will be used to represent the third sub-pixel in the drawings and the description.

[0340] Those skilled in the art can understand that the "second wavelength range includes the first sub-band, the second sub-band or the third sub-band" in the present disclosure covers the following two cases: the second wavelength range is larger than the sum of the first sub-band, the second sub-band or the third sub-band; the second wavelength range is one sub-band selected from the first sub-band, the second sub-band or the third sub-band, for example, the wavelength range corresponding to red light, green light or blue light, respectively. In the former case, the second wavelength range includes, for example, the wavelength range of visible light, so the brightness of the surrounding environment can be determined according to the output of the second pixel. In the latter case, the second wavelength range is the first sub-wavelength range, the second sub-wavelength range or the third sub-wavelength range, and one second pixel can sense the incident light of one sub-band, for example, to determine the intensity of one color light. For example, in the embodiment shown in FIG. 30, the second filter 3013 is a first sub-filter. The second wavelength range includes the first sub-band. The first sub-band includes the wavelength range of red light (for example, 625-740 nm). The second filter 3013 (i.e., the first sub-filter) and the second SPAD unit 3009 form a first sub-pixel. In this case, the second sub-pixel can sense the intensity of red light in the ambient light.

[0341] FIG. 35 shows a schematic diagram of an exemplary sensing device 3500 including a first pixel 3501 and a second pixel 3503, consistent with some embodiments of the present disclosure. The first pixel 3501 can be the first pixel 2901 and 3001 of the embodiments shown in FIGS. 29 and 30, and the second pixel 3503 can be the second pixel 2903 and 3003 of the embodiments shown in FIGS. 29 and 30. The second pixel 3503 includes a first sub-pixel R for sensing red light with a wavelength range of 625-740 nm, a second sub-pixel G for sensing green light with a wavelength range of 500-565 nm, and a third sub-pixel B for sensing blue light with a wavelength range of 440-485 nm. According to embodiments of the present disclosure, the first pixel 3501 is uniformly arranged in an array of the first sub-pixel R, the second sub-pixel G and the third sub-pixel B.

[0342] According to embodiments of the present disclosure, the second bias voltage applied to the first sub-pixel R, the second bias voltage applied to the second sub-pixel G, and the third bias voltage applied to the third sub-pixel B are different from each other, thereby improving the detection performance of each sub-pixel for the respective sensed wavelength range. For example, for SPADs, the photon detection efficiency PDE thereof is not the same for different wavelengths of light in the case of the same reverse bias voltage, and therefore the bias voltage applied to the SPADs of the first sub-pixel, the second sub-pixel, and the third sub-pixel can be controlled / adjusted respectively. For example, different bias voltages are applied to the SPADs of the first sub-pixel R, the second sub-pixel G, and the third sub-pixel B, the photon detection efficiency is optimized independently for each channel, and the RGB response curve is balanced, so that the color captured by the imaging system is more consistent with the human eye perception. For example, a smaller bias voltage can be provided to the SPADs of the second sub-pixel G having a relatively high PDE, further reducing power consumption and heat generation. At the same time, the bias voltage of each channel can also be dynamically configured according to different lighting environments, improving the performance of the imaging system in different lighting environments.

[0343] In embodiments of the present disclosure, the first bias voltage Vb1 is different from the second bias voltage Vb2. In some embodiments, the first bias voltage Vb1 can be greater than the second bias voltage Vb2. For the SPADs of the second pixel (e.g., the first sub-pixel R, the second sub-pixel G, or the third sub-pixel B), applying a smaller reverse bias voltage can effectively reduce the dark count rate of the SPADs, shorten the recovery time of the SPADs, and improve the imaging quality of the SPADs. Especially when the proportion of the second pixel is high, by reducing the second bias voltage Vb2, the overall power consumption and heat generation of the device can be effectively reduced, and the increase in the dark count rate with the increase in heat generation is also effectively reduced. In addition, applying a relatively high reverse bias voltage to the SPADs of the first pixel can improve the photon detection efficiency thereof, improve the distance measurement capability, and also accelerate the start of the avalanche effect, further improve the time resolution capability of the first pixel, and improve the distance measurement accuracy.

[0344] In some other embodiments of the present disclosure, the first bias voltage Vb1 can be less than the second bias voltage Vb2, so that the reverse bias voltage of the SPADs of the second pixel is greater than that of the SPADs of the first pixel. By applying a relatively low reverse bias voltage to the SPADs of the first pixel, the power consumption of the device can be reduced to a certain extent. At the same time, in a weak light environment, a lower reverse bias voltage can effectively reduce the recovery time and improve the dynamic range of the SPADs of the first pixel in a weak light environment. In addition, for the SPADs of the second pixel, a larger reverse bias voltage can further improve the photon detection efficiency in the visible light band, and further enhance the dynamic range and imaging quality of the SPADs of the second pixel in a weak light environment.

[0345] In addition, although the first pixel and the second pixel are shown as having the same size in FIGS. 29-35, the present disclosure does not limit the size relationship between the two types of pixels. According to an embodiment of the present disclosure, the SPADs in the first SPAD unit and the second SPAD unit can be formed of different materials. According to an embodiment of the present disclosure, the first SPADs in the first SPAD unit can employ indium gallium arsenide-based SPADs, mercury cadmium telluride-based SPADs, or indium telluride-based SPADs, and the second SPADs in the second SPAD unit can employ silicon-based SPADs. According to another embodiment of the present disclosure, the first SPADs in the first SPAD unit can employ silicon-based SPADs, and the second SPADs in the second SPAD unit can employ indium gallium arsenide-based SPADs, mercury cadmium telluride-based SPADs, or indium telluride-based SPADs.

[0346] According to an embodiment of the present disclosure, at least one of the first bias voltage Vb1 and the second bias voltage Vb2 applied to the first SPAD unit and the second SPAD unit by the voltage source is adjustable. FIG. 36 shows a schematic diagram of an exemplary sensing device 3600, which includes a first pixel 3601, a second pixel 3603, and a voltage source 3605, consistent with some embodiments of the present disclosure. The first pixel 3601 can be the first pixel 2901, 3001 of the embodiments shown in FIGS. 29 and 30, the second pixel 3605 can be the second pixel 2903, 3003 of the embodiments shown in FIGS. 29 and 30, and the voltage source 3605 can be the voltage source 2905 of the embodiments shown in FIG. 29.

[0347] As shown in FIG. 36, the sensing device 3600 further includes a controller 3627, which can adjust at least one of the first bias voltage Vb1 or the second bias voltage Vb2 according to at least one of a measurement parameter or an environmental parameter.

[0348] According to an embodiment of the present disclosure, the measurement parameter includes a target detection distance of the first pixel of the sensing device. When the target detection distance is large (e.g., greater than a distance threshold), the first bias voltage Vb1 can be increased to increase the photon detection efficiency PDE of the first SPAD unit of the first pixel, so that a weak echo returned by a distant obstacle can be sensed. When the target detection distance is small (e.g., less than the distance threshold), the first bias voltage Vb1 can be decreased. According to an embodiment of the present disclosure, the measurement parameter can also include a reflectivity of an obstacle. When the reflectivity of the obstacle is high (e.g., greater than a reflectivity threshold), the first bias voltage Vb1 can be decreased; when the reflectivity of the obstacle is low (e.g., less than the reflectivity threshold), the first bias voltage Vb1 can be increased.

[0349] According to embodiments of the present disclosure, the environmental parameter comprises an ambient light intensity. The controller 3627 can determine the ambient light intensity based on the signal output by the second SPAD unit of the second pixel 3603. The second pixel 3603 can be the second pixel 3003 with the second filter 3013 as shown in the embodiment of FIG. 30, or the second pixel 3103 without a filter as shown in the embodiment of FIG. 31. When the second pixel 3603 does not include a filter, light beams of different wavelengths can be incident on the second SPAD unit of the second pixel 3603, including light beams in the visible light band, and thus the controller 3627 can determine the ambient light intensity based on the signal output by the second SPAD unit of the second pixel 3603. When the second pixel 3603 includes a filter and the passband range of the filter includes the visible light band, the controller 3627 can directly determine the ambient light intensity based on the signal output by the second SPAD unit of the second pixel 3603. When the second pixel 3603 is the second pixel 3503 (including a first sub-pixel R, a second sub-pixel G, and a third sub-pixel B) as shown in the embodiment of FIG. 35, the controller 3627 can determine the ambient light intensity based on the output signals of the first sub-pixel R, the second sub-pixel G, and the third sub-pixel B.

[0350] In the embodiment shown in FIG. 32, the voltage source includes a first voltage source 3219, a second voltage source 3221, a third voltage source 3223, and a fourth voltage source 3225, wherein a first end (e.g., anode or cathode) of the first SPAD 3215 of the first SPAD unit is coupled to the first voltage source 3219, the voltage of which is U1, a second end (e.g., cathode or anode) of the first SPAD 3215 of the first SPAD unit is coupled to the second voltage source 3221, the voltage of which is U2, and the first bias voltage Vb1 applied to the first SPAD 3215 of the first SPAD unit by the voltage source is Vb1 = U2 - U1. In order to adjust the first bias voltage Vb1, at least one of the first voltage source 3219 and the second voltage source 3221 can include a switchable sub-voltage source. The following is described by way of example with the second voltage source including a switchable sub-voltage source.

[0351] FIGS. 37A and 37B show schematic diagrams of an exemplary sensing device 3700 including a first pixel and a second pixel, consistent with some embodiments of the present disclosure. The first pixel includes a first SPAD cell including one or more SPADs 3715, and the second pixel includes a second SPAD cell including one or more SPADs 3717. The first pixel can be the first pixel 2901, 3001 of the embodiments shown in FIGS. 29A, 29B, and 30, and the second pixel can be the second pixel 2903, 3003 of the embodiments shown in FIGS. 29A, 29B, and 30, the first SPAD cell can be the first SPAD cell 2907, 3007 of the embodiments shown in FIGS. 29A, 29B, and 30, and the second SPAD cell can be the second SPAD cell 2909, 3009 of the embodiments shown in FIGS. 29A, 29B, and 30.

[0352] In FIG. 37, one SPAD is shown for illustrative purposes. The same applies to the case where the first SPAD cell and the second SPAD cell include multiple SPADs.

[0353] In addition, in the embodiments of FIGS. 37A and 37B, the sensing device 3700 includes quenching resistors R1 and R2, and the output signal S1 is drawn from the second end (e.g., cathode or anode) of the SPAD 3715 of the first SPAD cell, and the output signal S2 is drawn from the second end (e.g., cathode or anode) of the SPAD 3717 of the second SPAD cell. The working principle is similar to the embodiment shown in FIG. 32, which will not be repeated here.

[0354] As shown in FIG. 37A, the voltage source includes a first voltage source 3719, the voltage of which is U1, and the anode of the SPAD 3715 of the first SPAD unit is coupled to the first voltage source 3719. The voltage source further includes a first sub-voltage source 3729 and a second sub-voltage source 3731, and the sensing device 3700 further includes a controller 3727. The voltage of the first sub-voltage source 3729 is U21, and the voltage of the second sub-voltage source 3731 is U22. The cathode of the SPAD 3715 of the first SPAD unit is coupled to the first sub-voltage source 3729 through a first switch K11, and the cathode of the SPAD 3715 of the first SPAD unit is coupled to the second sub-voltage source 3731 through a second switch K12, and the anode of the SPAD 3715 of the first SPAD unit is coupled to the first voltage source 3719. The controller 3727 can determine the conduction and disconnection of the first switch K11 and the second switch K12 according to at least one of the measurement parameters or the environmental parameters. As shown in FIG. 37A, the controller 3727 is coupled to the control terminals of the first switch K11 and the second switch K12, respectively, so as to control the conduction and disconnection of the first switch K11 and the second switch K12 according to at least one of the measurement parameters or the environmental parameters. It can be understood by those skilled in the art that the first switch K11 and the second switch K12 are not simultaneously conductive. When the first switch K11 is conductive and the second switch K12 is disconnected, the cathode of the SPAD 3715 of the first SPAD unit is coupled to the first sub-voltage source 3729, and at this time the first bias voltage Vb1 applied to the SPAD 3715 of the first SPAD unit by the voltage source is Vb1 = U21-U1. When the first switch K11 is disconnected and the second switch K12 is conductive, the cathode of the SPAD 3715 of the first SPAD unit is coupled to the second sub-voltage source 3731, and at this time the first bias voltage Vb1 applied to the SPAD 3715 of the first SPAD unit by the voltage source is Vb1 = U22-U1.

[0355] As shown in FIG. 37B, the voltage source includes a third voltage source 3723, the voltage of which is U3, and the anode of the SPAD 3717 of the second SPAD unit is coupled to the third voltage source 3723. The voltage source further includes a third sub-voltage source 3733 and a fourth sub-voltage source 3735, the voltage of the third sub-voltage source 3733 is U41, and the voltage of the fourth sub-voltage source 3735 is U42. Wherein the cathode of the SPAD 3717 of the second SPAD unit is coupled to the third sub-voltage source 3733 through a third switch K21, and the cathode of the SPAD 3717 of the second SPAD unit is coupled to the fourth sub-voltage source 3735 through a fourth switch K22, and the anode of the SPAD 3717 of the second SPAD unit is coupled to the third voltage source 3723. The controller 3727 can determine the turn-on and turn-off of the third switch K21 and the fourth switch K22 according to at least one of the measurement parameters or the environmental parameters. As shown in FIG. 37B, the controller 3727 is coupled to the control terminals of the third switch K21 and the fourth switch K22 respectively, so as to control the turn-on and turn-off of the third switch K21 and the fourth switch K22 according to at least one of the measurement parameters or the environmental parameters. It can be understood by those skilled in the art that the third switch K21 and the fourth switch K22 are not turned on at the same time. When the third switch K21 is turned on and the fourth switch K22 is turned off, the cathode of the SPAD 3717 of the second SPAD unit is coupled to the third sub-voltage source 3733, at this time the second bias voltage Vb2 applied to the SPAD 3717 of the second SPAD unit by the voltage source is Vb2=U41-U3. When the third switch K21 is turned off and the fourth switch K22 is turned on, the cathode of the SPAD 3717 of the second SPAD unit is coupled to the fourth sub-voltage source 3735, at this time the second bias voltage Vb2 applied to the SPAD 3717 of the second SPAD unit by the voltage source is Vb2=U42-U1.

[0356] According to embodiments of the present disclosure, as shown in FIG. 37A, in order to ensure unidirectional current flow, a diode D1 is arranged between the first switch K11 and the quenching resistor R1, and a diode D2 is arranged between the second switch K12 and the quenching resistor R1. As shown in FIG. 37B, a diode D3 is arranged between the third switch K21 and the quenching resistor R2, and a diode D4 is arranged between the fourth switch K22 and the quenching resistor R2.

[0357] According to embodiments of the present disclosure, U21

[0358] Optionally, U22=U41, that is, the SPAD 3715 of the first pixel and the SPAD 3717 of the second pixel can share the same voltage.

[0359] In the embodiments shown in FIGS. 37A and 37B, the cathode of the SPAD 3715 of the first SPAD unit is coupled to a different sub-voltage source, and the cathode of the SPAD 3717 of the second SPAD unit is coupled to a different sub-voltage source. Those skilled in the art can understand that the present disclosure is not limited thereto, and the anode of the SPAD 3715 of the first SPAD unit can be coupled to a different sub-voltage source, the anode of the SPAD 3717 of the second SPAD unit can be coupled to a different sub-voltage source, while the cathode of the SPAD 3715 of the first SPAD unit is coupled to a fixed voltage source, and the cathode of the SPAD 3717 of the second SPAD unit is coupled to a fixed voltage source. The anode of the SPAD 3715 is coupled to a different sub-voltage source and the anode of the SPAD 3717 is coupled to a different sub-voltage source by the switch, so as to adjust the reverse bias voltage of the SPAD 3715 and the SPAD 3717. Details are not described herein.

[0360] FIG. 38 shows a schematic diagram of an exemplary sensing device 3800, which includes a first pixel 3801, a second pixel 3803, and a voltage source 3805, and includes a controller 3827, consistent with some embodiments of the present disclosure. The first pixel 3801 can be the first pixel 2901, 3001 of the embodiments shown in FIGS. 29 and 30, the second pixel 3803 can be the second pixel 2903, 3003 of the embodiments shown in FIGS. 29 and 30, the voltage source 3805 can be the voltage source 2905 of the embodiments shown in FIG. 29, and the controller 3827 can be the controller 3627 of the embodiments shown in FIG. 36.

[0361] The controller 3827 (or the controller 3627, 3727) can be disposed on the sensing device, or can also be disposed on a vehicle, a server, a computer, or the like. The controller can include a control circuit, a central processing unit (CPU), and can also include other general-purpose processors, digital signal processors (DSPs), application specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs) or other programmable logic devices, discrete gates or transistor logic components, discrete hardware components, and the like. The general-purpose processor can be a microprocessor or any conventional processor, etc.

[0362] As shown in FIG. 38, the sensing device 3800 further includes a processor 3839 coupled with the first pixel 3801 and the second pixel 3803, and can determine information of the surrounding environment based on signals output by the first pixel 3801 and the second pixel 3803.

[0363] In embodiments of the present disclosure, the processor can be a circuit having a processing capability of signals. For example, the processor can be a circuit having an instruction reading and running capability, such as a central processing unit (CPU), a microprocessor, a graphics processing unit (GPU), a digital signal processor (DSP), or the like. For another example, the processor can realize its functions through a logic relationship of a hardware circuit, which is fixed or can be reconfigured, such as an application specific integrated circuit (ASIC) or a programmable logic device (PLD) implemented hardware circuit, such as a field programmable gate array (FPGA). In the reconfigurable hardware circuit, the processor loads a configuration document to realize the process of hardware circuit configuration, which can be understood as the process of the processor loading instructions to realize its functions.

[0364] According to embodiments of the present disclosure, the processor 3839 can determine color information based on at least the signal output by the second pixel 3803, and determine depth information according to the signal output by the first pixel 3801.

[0365] According to embodiments of the present disclosure, the sensing device 3800 further includes an emitter 3841. The emitter 3841 can emit a light beam L1, the wavelength of the light beam L1 being within the first wavelength range Wb1, and the processor 3839 can determine depth information according to a time of emission of the light beam L1 and a time of reception of light within the first wavelength range received by the first pixel 3801. As shown in FIG. 38, the processor 3839 is coupled with the emitter 3841, so as to obtain or instruct the emitter 3841 to emit the light beam L1. In some embodiments, the light beam L1 can include a continuous wave light beam or a pulsed light beam.

[0366] In some embodiments, the transmitter 3841 can include a transmit circuit, a vertical-cavity surface-emitting laser (VCSEL), an edge-emitting laser (EEL), a distributed feedback laser (DFB), a fiber laser, or similar devices. Multiple transmit circuits or lasers can be arranged in a one-dimensional array or a two-dimensional array.

[0367] The sensing device in the above embodiments includes a first pixel for sensing light in a first wavelength range to measure depth and a second pixel for sensing light in a second wavelength range. The present disclosure also provides a sensing device in which the same pixel can be applied with different bias voltages to work in different modes. Details are described below with reference to the accompanying drawings.

[0368] FIG. 39 shows a schematic diagram of an exemplary sensing device 3900 including a third pixel 3943 and a voltage source 3905, consistent with some embodiments of the present disclosure. The third pixel 3943 includes a third SPAD cell including one or more SPADs.

[0369] As shown in FIG. 39, the voltage source 3905 is coupled to the third SPAD cell of the third pixel 3943 and can apply a third bias voltage Vb3 or a fourth bias voltage Vb4 to the SPADs of the third SPAD cell to cause the third pixel 3943 to work in a first mode or a second mode, where in the first mode the third SPAD cell senses light in a first wavelength range Wb1 to measure depth and in the second mode the third SPAD cell senses light in a second wavelength range Wb2 to generate a pattern, and the third bias voltage Vb3 is different from the fourth bias voltage Vb4.

[0370] According to embodiments of the present disclosure, the sensing device 3900 further includes a controller 3927. The controller 3927 is coupled to the voltage source 3905 and can control the voltage source 3905 to output the third bias voltage Vb3 or the fourth bias voltage Vb4 to the third SPAD cell of the third pixel 3943 to cause the third pixel 3943 to work in the first mode or the second mode.

[0371] According to embodiments of the present disclosure, as shown in FIG. 39, the sensing device 3900 further includes a processor 3939 coupled to the third pixel 3943 and can determine information of a surrounding environment based on signals output by the third pixel 3943.

[0372] According to an embodiment of the present disclosure, as shown in FIG. 39, the processor 3939 can determine color information based on at least the signal output by the third pixel 3943 in the second mode, and determine depth information according to the signal output by the third pixel 3943 in the first mode.

[0373] According to an embodiment of the present disclosure, as shown in FIG. 39, the sensing device 3900 further comprises a transmitter 3941. The transmitter 3941 can emit a light beam L1, the wavelength of the light beam L1 being within the first wavelength range Wb1, and the processor 3939 can determine depth information according to the emission time of the light beam L1 and the receiving time of the third pixel 3943 receiving light within the first wavelength range. As shown in FIG. 39, the processor 3939 is coupled to the transmitter 3941, so that the processor 3939 can obtain or instruct the transmitter 3941 to emit the light beam L1. In some embodiments, the light beam L1 can include a continuous wave light beam or a pulsed light beam.

[0374] In addition, those skilled in the art can understand that the features in the embodiments described above with reference to FIGS. 29-38 can be applied to the embodiment of FIG. 39 unless they contradict the features of FIG. 39. Details are not repeated here.

[0375] According to an aspect of the present disclosure, three-dimensional (3D) vision sensing technology can provide a three-dimensional sensing capability for machines or devices, providing rich environmental data. It has broad application prospects in the fields of robot navigation, autonomous driving, augmented reality, virtual reality, object recognition or motion capture, etc.

[0376] Currently, in the 3D vision sensing technology, image data can be acquired by using an image sensor. For example, the image data includes RGB image data. Depth data can be acquired by using a depth sensor, which can represent the distance from the sensor to the object surface. For example, the depth sensor can include a time of flight (ToF) sensor, which determines the distance from the sensor to the object surface by measuring the time of flight of a light pulse. For example, the sensor emits a light pulse, the light pulse encounters an object, and at least part of the reflected light can be received by the sensor. The time from the emission of the light pulse to the return of the light pulse to the sensor is the time of flight, and the depth of the object surface can be determined by using the time of flight and the speed of light. For another example, the depth sensor can include a structured light sensor, which can project structured light of a known pattern to the object surface, and determine the depth of the object surface based on the deformation of the pattern in the imaging relative to the known pattern by capturing the imaging of the structured light on the object surface. For another example, the depth sensor can include a multi-view camera. Taking a binocular camera as an example, two cameras with a known distance between them can be used to capture images of an object, and the depth of the object surface can be determined by triangulation.

[0377] A three-dimensional camera combines an image sensor and a depth sensor to form a dual-sensor system, and uses the dual-sensor system to acquire three-dimensional image data, such as RGBD (red-green-blue-depth) image data. Taking an RGBD three-dimensional camera as an example, the RGBD three-dimensional camera obtains RGB image data and depth data from the image sensor and the depth sensor respectively, and fuses the RGB image data and the depth data to obtain RGBD image data. When fusing, the RGB image data and the depth data at the same spatial position can be associated by spatial calibration. For analysis in a dynamic scene, the RGB image data and the depth data captured at the same time can be associated by time synchronization. Moreover, when using the above dual-sensor system, the three-dimensional camera has high accuracy requirements for the installation position of the image sensor and the depth sensor, and the error of the installation position can affect the matching of the image data and the depth data, causing the reliability of the three-dimensional camera to decrease. As can be seen, although the above three-dimensional camera with a dual-sensor system can simultaneously acquire image data and depth data of an object, the calibration or synchronization of the data during the data fusion process has high requirements, resulting in a complex data processing process of the system, limited sensing efficiency, and possibly affected sensing performance. In addition, the hardware structure has high installation requirements, which increases the manufacturing cost of the sensing device.

[0378] In view of this, several technical solutions are provided in the embodiments of the present disclosure, including a semiconductor device, a sensing device, and an electronic device, etc. The semiconductor device can be used to simultaneously sense image data and depth data, reduce the complexity of subsequent data processing, reduce errors in the data fusion process, and improve sensing efficiency. The semiconductor device can also achieve concurrent sensing at the pixel level through a stacked structure, with high integration and low complexity, to improve sensing efficiency and performance.

[0379] FIG. 40 shows a structural example of a semiconductor device, consistent with some embodiments of the present disclosure. Referring to FIG. 40, the semiconductor device 4000 includes a first circuit layer 4020, a second circuit layer 4040, and a filter layer 4060. The first circuit layer 4020 includes a first photodetection region 4022. The second circuit layer 4040 is located above the first circuit layer 4020 and includes a second photodetection region 4042. The filter layer 4060 is located above the second circuit layer 4040 and includes a filter region 4062. The filter region 4062 can transmit light w1 of a first wavelength band and light w21 or w22 of a second wavelength band in incident light. The second photodetection region 4042 can transmit the light w1 of the first wavelength band and convert the light w21 or w22 of the second wavelength band into a second electrical signal. The first photodetection region 4022 can convert the light w1 of the first wavelength band into a first electrical signal. The first electrical signal is used for depth measurement, and the second electrical signal is used for measurement of light intensity of the second wavelength band.

[0380] The light w1 of the first wavelength band and the light w21 or w22 of the second wavelength band can be referred to as light of a target wavelength band, and the target wavelength band can include a wavelength band for depth measurement and a wavelength band for light intensity measurement. The filter layer 4060 can allow light of the target wavelength band to pass by filtering out light w01 or w02 of a non-target wavelength band. The light w01 or w02 of the non-target wavelength band can include one or more wavelength bands. The filter layer 4060 can have different filter regions 4062, for example, the filter regions 4062 with different fill patterns in FIG. 40 represent different filter regions, and different filter regions can filter out different non-target wavelength bands, allowing different second wavelength bands to pass through, so that different second wavelength bands of light intensity can be sensed. For example, the filter region 4062 filled with vertical lines can filter out the light w01 of the non-target wavelength band, allowing the light w21 of the second wavelength band to pass through. The filter region 4062 filled with diagonal lines can filter out the light w02 of the non-target wavelength band, allowing the light w22 of the second wavelength band to pass through. In some embodiments, filtering out light of a wavelength band can be understood as allowing the light of the wavelength band to pass through at a transmittance lower than a preset transmittance. In some embodiments, the preset transmittance can be 50%, 40%, 30%, 20%, 10%, 5%, 3%, 1%, 0.5%, 0.1%, etc.

[0381] In the above embodiments, the first circuit layer, the second circuit layer and the filter layer can be integrated in one semiconductor device. The first circuit layer integrates the first photodetector region, and the first photodetector region can be used for photoelectric conversion to convert light of the first wavelength band into a first electrical signal for depth measurement. The second circuit layer integrates the second photodetector region, and the second photodetector region can be used for photoelectric conversion to convert light of the second wavelength band into a second electrical signal for measurement of the light intensity of the second wavelength band. The filter layer is integrated on the second circuit layer, and can filter out light of non-target wavelength band in the incident light so that light of the target wavelength band reaches the first circuit layer and the second circuit layer. In this way, one semiconductor device can be used to simultaneously perform light intensity sensing and depth sensing on the incident light, has a high degree of integration, is conducive to miniaturization of the sensing device, and has a low cost. In addition, the above semiconductor device is equivalent to using a single sensing system to realize multiple sensing functions, for example, the semiconductor device can simultaneously realize sensing of light intensity and depth, which can reduce the requirements for spatial calibration and time synchronization in subsequent data fusion process, thereby reducing the complexity of subsequent data processing, improving sensing efficiency, and having better sensing performance. In addition, compared with a three-dimensional camera of a dual-sensor system, when the semiconductor device is used in a sensing device, the number of devices can be reduced, the installation of the device is simplified, and the manufacturing cost of the sensing device is saved.

[0382] Please continue to refer to FIG. 40. The first photodetector region 4022 can include one or more detectors 40222, and the second photodetector region 4042 includes one or more detectors 40422. For example, the detector includes but is not limited to one or more of a photodetector circuit, a PIN photodiode (PIN PD), an avalanche photodiode (APD), a single photon avalanche diode (SPAD), a silicon photomultiplier (SiPM), or the like. The types of the detectors 40222 and the detectors 40422 can be the same or different, and the number of the detectors 40222 included in the first photodetector region 4022 and the number of the detectors 40422 included in the second photodetector region 4042 can be the same or different.

[0383] In some embodiments, the first circuit layer 4020 can include a plurality of first photodetecting regions 4022, which can be arranged in an array. The second circuit layer 4040 can include a plurality of second photodetecting regions 4042, which can be arranged in an array. The filter layer 4060 can include a plurality of filter regions, which can be arranged in an array. Any of the above arrays can be a one-dimensional array or a two-dimensional array. A first photodetecting region 4022 can correspond to one second photodetecting region 4042 in position, and one second photodetecting region 4042 can correspond to one filter region 4062 in position. In some embodiments, two or more photodetecting regions corresponding in position can be understood as the two or more photodetecting regions having the same or similar positions in at least one direction (e.g., the direction of light incidence or a direction having an included angle with the direction of light incidence).

[0384] Please continue to refer to FIG. 40. In some embodiments, the filter region 4062 and the second photodetecting region 4042 are aligned in a direction perpendicular to the substrate of the semiconductor device 4000. This alignment structure can make the second photodetecting region 4042 be dedicated to the detection of the second waveband light transmitted by the filter region 4062, reduce the light interference between different second photodetecting regions 4042 in the second circuit layer 4040, make the light intensity measurement of different second photodetecting regions more accurate, and further improve the sensing performance of the semiconductor device 4000. In some embodiments, the first photodetecting region 4022 and the second photodetecting region 4042 can be aligned in a direction perpendicular to the substrate of the semiconductor device 4000. This alignment structure can make the first photodetecting region 4022 be dedicated to the detection of the first waveband light transmitted by the second photodetecting region 4042 aligned therewith, reduce the light interference between different first photodetecting regions 4022 in the first circuit layer 4020, make the depth measurement of different first photodetecting regions more accurate, and further improve the sensing performance of the semiconductor device 4000. In addition, this alignment structure is conducive to the design of the readout circuit of the first electrical signal and the second electrical signal, can reduce the wiring complexity of the readout circuit, and thus reduce the manufacturing cost of the semiconductor device.

[0385] In some embodiments, the first circuit layer 4020 and the second circuit layer 4040 can be formed in the same or different chips (or dies, wafers). For example, the first circuit layer 4020 can be formed in a first chip (or die, wafer), and the second circuit layer 4040 can be formed in a second chip (or die, wafer).

[0386] The structure type of the first circuit layer 4020 and the second circuit layer 4040 can be various. For example, the structure type of the first circuit layer 4020 can include a front-side illumination (FSI) structure or a back-side illumination (BSI) structure. For example, the structure type of the second circuit layer 4040 can include an FSI structure or a BSI structure. The structure type of the first circuit layer 4020 and the structure type of the second circuit layer 4040 can be the same or different.

[0387] The connection manner between the first circuit layer 4020 and the second circuit layer 4040 can be various, for example, the connection manner can adopt a through-silicon via (TSV) or other equivalent manners. For another example, the connection manner can adopt a hybrid bonding or other equivalent manners. When the first circuit layer 4020 and the second circuit layer 4040 are located in different chips, the second circuit layer 4040 can be stacked on the first circuit layer 4020 by using a hybrid bonding technology. The hybrid bonding technology can realize high-density and high-performance interconnection between chips (or dies, wafers) at the same time. In the case of not using a solder bump, the chips (or dies, wafers) are directly connected, which greatly reduces the distance between the chips and improves the integration. In addition, the hybrid bonding technology has a good effect on the stacking of heterogeneous chips (or dies, wafers), and for the first circuit layer 4020 and the second circuit layer 4040 realized by using heterogeneous chips (or wafers), the hybrid bonding connection manner can provide better connection performance.

[0388] In some embodiments, the first band of light w1 includes short-wave infrared (SWIR) light or near infrared (NIR) light. The second band of light w21 or w22 can include light of a target sub-band of the visible light band. Infrared (IR) light is between microwaves and visible light, for example, the band can include 0.75um-1000um. IR light can include NIR light, SWIR light, mid wave infrared (MWIR) light, long wave infrared (LWIR) light, etc. For example, the band of NIR light includes 0.75um to 1.1um. For example, the band of SWIR light includes 1.1um to 2.5um, which can be optionally extended to 3um. For example, the band of MWIR light includes 3um to 5um. For example, the band of LWIR light includes 7um to 14um. Selecting SWIR light or NIR light for the first band of light facilitates low-cost implementation of the second photodetection region for the transmission of the first band of light. For example, the detector 40422 of the second photodetection region 4042 can employ a silicon-based detector (e.g., a silicon-based SPAD), silicon is almost transparent to light with a wavelength of about 1 micron or more than 1 micron, and the use of a silicon-based detector can achieve photoelectric conversion of the visible light band and efficient transmission of SWIR light or NIR light at a lower cost.

[0389] In some embodiments, the first band of light w1 includes SWIR light, the power density in the SWIR band is significantly lower than that in the NIR band, and eye safety regulations allow the sensing device to emit much higher energy in the SWIR band than in the NIR band. The use of SWIR light can enable the semiconductor device to have higher eye safety performance when applied, and obtain better sensing performance by emitting higher energy.

[0390] In some embodiments, the detector 40222 of the first photodetection region 4022 can employ a silicon-germanium (SiGe) detector (e.g., a silicon-germanium SPAD). The SiGe detector can work in the SWIR band range and can effectively detect SWIR band photons to achieve sensing of depth.

[0391] The target sub-waveband can be selected in multiple ways. For example, the target sub-waveband can include any of the blue light waveband, the green light waveband, and the red light waveband, and the first electrical signal can be used to represent the intensity of the blue light, the green light, or the red light. The semiconductor device 4000 can be configured to have one detection region group for one pixel, and the detection region group can include a plurality of second photodetection regions 4042, which can include at least one second photodetection region for detecting the blue light waveband, at least one second photodetection region for detecting the green light waveband, and at least one second photodetection region for detecting the red light waveband. The RGB image data of one pixel can be obtained by using the detection region group. The following description is made with reference to the accompanying drawings.

[0392] FIG. 41 shows a structural example of another semiconductor device, consistent with some embodiments of the present disclosure. A pixel structure of the semiconductor device is shown in FIG. 41, which includes a corresponding first photodetection region array 4120, a second photodetection region array 4140, and a filter region array 4160 in position. One pixel structure corresponds to one pixel, and the output signal can be used to determine the sensing data of the pixel. For example, the pixel structure can output a first electrical signal and a second electrical signal. The first electrical signal can be used for depth measurement to determine the depth data of the pixel, and the second electrical signal can be used for light intensity measurement to determine the RGB image data of the pixel. The semiconductor device can include a plurality of pixel structures to determine the sensing data of a plurality of pixels. Referring to FIG. 41, the semiconductor device 4100 includes a first circuit layer, a second circuit layer, and a filter layer. The first circuit layer can include the first photodetection region array 4120, the second circuit layer can include the second photodetection region array 4140, and the filter layer can include the filter region array 4160. The filter region described in the above embodiments can be one filter region in the filter region array 4160. The second photodetection region can be one second photodetection region in the second photodetection region array 4140. The first photodetection region can be one first photodetection region in the first photodetection region array 4120. The filter region, the second photodetection region, and the first photodetection region are stacked in a direction perpendicular to the base of the semiconductor device 4100.

[0393] In the pixel structure, the first photodetection region array 4120, the second photodetection region array 4140, and the filter region array 4160 can have the same or approximate size, resolution, or coordinates. The same or approximate size can facilitate the alignment between the first photodetection region array 4120, the second photodetection region array 4140, and the filter region array 4160. For example, the same or approximate resolution includes the same or approximate number and type of detectors included in the first photodetection region and the second photodetection region. The same or approximate resolution can further reduce the complexity in subsequent processing, such that the data processing of different pixels can use the same or similar method. The same coordinates can enable the position alignment between the first photodetection region array 4120, the second photodetection region array 4140, and the filter region array 4160.

[0394] One filter region array 4160 corresponds to one second photodetection region array 4140 in position. One second photodetection region array 4140 corresponds to one first photodetection region array 4120 in position. In some embodiments, two or more photodetection region arrays correspond in position can be understood as that the two or more photodetection region arrays have the same or approximate position in at least one direction (e.g., the direction of light incidence or the direction having an angle with the direction of light incidence).

[0395] The second photodetection region array 4140 can include a plurality of second photodetection regions 4142. The first photodetection region array 4120 can include a plurality of first photodetection regions 4122. The first photodetection region 4122 can include one or more detectors that can convert the light signal in the SWIR waveband into a first electrical signal in response to the light signal. The second photodetection region 4142 can include one or more detectors that can convert the light signal in the visible light waveband into a second electrical signal in response to the light signal. The filter region array 4160 can include a plurality of filter regions for transmitting different wavebands of visible light.

[0396] In some embodiments, the first waveband of light can include one or more of a first sub-waveband of light, a second sub-waveband of light, or a third sub-waveband of light. For example, the light filtering region array 4160 can include a first light filtering region 41621, a second light filtering region 41622, and a third light filtering region 41623. The first light filtering region 41621 can transmit the first sub-waveband of light, the second light filtering region 41622 can transmit the second sub-waveband of light, and the third light filtering region 41623 can transmit the third sub-waveband of light. The second photodetector region array 4140 includes a first detector 41421 that can convert the first sub-waveband of light into a first sub-signal, a second detector 41422 that can convert the second sub-waveband of light into a second sub-signal, and a third detector 41423 that can convert the third sub-waveband of light into a third sub-signal. The second electrical signal can include the first sub-signal, the second sub-signal, and the third sub-signal.

[0397] Taking RGB image sensing as an example, the first sub-waveband of light can include green waveband of visible light, the second sub-waveband of light can include red waveband of visible light, and the third sub-waveband of light can include blue waveband of visible light. The first light filtering region 41621 of the light filtering region array 4160 can transmit green waveband of visible light. The second light filtering region 41622 can transmit red waveband of visible light. The third light filtering region 41623 can transmit blue waveband of visible light. The first detector 41421 can convert green waveband of light signal into a first sub-signal, the second detector 41422 can convert red waveband of light signal into a second sub-signal, and the third detector 41423 can convert blue waveband of light signal into a third sub-signal. For example, the third light filtering region 41623 filters out non-blue waveband of visible light in incident light, for example, filters out red waveband of light R and green waveband of light G. Blue waveband of light B is transmitted through the third light filtering region 41623 and incident to the third detector 41423, which converts the blue waveband of light signal into a third sub-signal. In addition, the SWIR waveband of light SR is transmitted through the third light filtering region 41623 and the third detector 41423 and incident to the first photodetector region 4122. The detector 41222 in the first photodetector region 4122 can convert the SWIR waveband of light signal into a first electrical signal.

[0398] The above structure can output the first electrical signal and the second electrical signal, and subsequent circuitry can determine RGB image data and depth data of the pixel corresponding to the structure based on the first electrical signal and the second electrical signal. The RGB image data and the depth data are obtained based on the same pixel structure and have a corresponding relationship by nature, reducing the requirement for spatial alignment and time synchronization of the RGB image data and the depth data in subsequent processing, and facilitating the improvement of sensing efficiency and performance.

[0399] In some embodiments, the light filtering region array 4160 can include a primary bandpass and a secondary bandpass. The primary bandpass is configured to pass visible light of at least one sub-band. The secondary bandpass is configured to pass light of the SWIR band or the NIR band. The light filtering region array 4160 may, for example, include a color filter array (CFA). For example, the first light filtering region 41621 may, for example, include a green filter, the second light filtering region 41622 may, for example, include a red filter, and the third light filtering region 41623 may, for example, include a blue filter.

[0400] In some embodiments, the ratio of the number of the first light filtering regions 41621, the number of the second light filtering regions 41622, and the number of the third light filtering regions 41623 in the light filtering region array 4160 can include 1:2:1 or 2:1:1. Still taking RGB as an example, the light filtering region array 4160 in FIG. 41 is described taking RGGB as an example, which is merely an example, and embodiments of the present disclosure are not limited thereto. For example, the above ratio setting manner can also realize the sensing structure of the light intensity of RRGB, RGRB, RGBB, etc.

[0401] In some embodiments, part of the first photodetecting region array 4120 can also be configured to measure the light intensity of the first band. By measuring the light intensity of the first band, the light intensity of the first band in the environment where the sensing device is located can be determined, and more abundant environmental data can be obtained.

[0402] Please continue to refer to FIG. 40 or FIG. 41. In some embodiments, the semiconductor device 4000 or 4100 can further include a third circuit layer 4010 or 4110. The third circuit layer 4010 or 4110 can include an integrated circuit. The integrated circuit can receive the first electrical signal and the second electrical signal, and determine the sensing data based on the first electrical signal and the second electrical signal. The first circuit layer 4020 or 4120 can be located above the third circuit layer 4010 or 4110.

[0403] The third circuit layer 4010 or 4110 is electrically connected with the first circuit layer 4020 or 4120 and the second circuit layer 4040 or 4140.

[0404] The first circuit layer 4020 or 4120 can be configured to be through-connected or dedicated-connected. In the through-connection, the first circuit layer 4020 or 4120 allows the probes in the second circuit layer 4040 or 4140 to be connected to the integrated circuit of the third circuit layer 4010 or 4110. In the dedicated-connection, the probes in the first circuit layer 4020 or 4120 are connected to the integrated circuit of the third circuit layer 4010 or 4110, which is not multiplexed by the probes in the second circuit layer 4040 or 4140. That is, the probes in the first circuit layer 4020 or 4120 can be independently wired to the lower layer.

[0405] The integrated circuit can output the sensing data directly or indirectly. In the direct output, the integrated circuit can generate the sensing data based on the first electrical signal and the second electrical signal, and output the sensing data to the external circuit after format conversion. In the indirect output, the integrated circuit can generate the sensing data after processing the first electrical signal and the second electrical signal, and store the sensing data. When the sensing data is output, the stored sensing data can be output to the external circuit after format conversion.

[0406] The connection between the third circuit layer 4010 or 4110 and the first circuit layer 4020 or 4120 can be various, and the connection between the third circuit layer 4010 or 4110 and the second circuit layer 4040 or 4140 can also be various. The connection mode can refer to the description of the connection between the first circuit layer 4020 or 4120 and the second circuit layer 4040 or 4140 in the above embodiments. For example, in some embodiments, the third circuit layer 4010 or 4110 and the first circuit layer 4020 or 4120 can be electrically connected by hybrid bonding technology. The third circuit layer 4010 or 4110 and the second circuit layer 4040 or 4140 can be electrically connected by hybrid bonding technology. The third circuit layer 4010 or 4110 may, for example, include a logic chip implemented by a complementary metal oxide semiconductor (CMOS) process, which can be a heterogeneous chip with the first chip including the first circuit layer 4020 or 4120, and can have better connection performance by hybrid bonding technology. Similarly, it can be a heterogeneous chip with the second chip including the second circuit layer 4040 or 4140, and can have better connection performance by hybrid bonding technology.

[0407] The integrated circuit can integrate the functions of light intensity sensing, depth sensing, data processing, and peripheral connection, etc. to read the output signals of the first and second photodetection regions, perform sensing operation, and process the results of the sensing operation, and communicate with the circuits or devices in the sensing device through the interface circuit. For example, FIG. 42 shows a structural example diagram of an integrated circuit consistent with some embodiments of the present disclosure. Referring to FIG. 42, the integrated circuit 4200 can include a light intensity determination circuit 4220, a depth determination circuit 4240, a processing circuit 4260, and an interface circuit 4280. The light intensity determination circuit 4220 can determine light intensity data D1 based on the first electrical signal C1. The depth determination circuit 4240 can determine depth data D2 based on the second electrical signal C2. The processing circuit 4260 can determine sensing data D3 based on the light intensity data D1 and the depth data D2. The interface circuit 4280 can output sensing data D4.

[0408] In some embodiments, the light intensity determination circuit can be implemented by a counting circuit, and multiple counting circuits can be set to determine the light intensity data of multiple wavebands. For example, FIG. 43 shows a structural example diagram of another integrated circuit consistent with some embodiments of the present disclosure. Referring to FIG. 43, the integrated circuit 4300 can include a counting circuit 4321, a counting circuit 4322, and a counting circuit 4323. The counting circuit 4321 can record the number of triggers of the first sub-signal in a sensing period, the counting circuit 4322 can record the number of triggers of the second sub-signal in the sensing period, and the counting circuit 4323 can record the number of triggers of the third sub-signal in the sensing period. The number of triggers of different sub-signals can represent the light intensity of visible light of different sub-wavebands. The size of the sensing period can be various, and can be set according to the needs in actual applications. The processing circuit 4360 can determine the light intensity data based on the light intensity of visible light of different sub-wavebands. The format or content of the light intensity data can be various, for example, the light intensity data includes RAW image data, RGB image data, or YUV image data, etc. For example, the processing circuit 4360 can output the light intensity data of visible light of different sub-wavebands as pixel values of different channels of pixels. The sensing data can include pixel values of multiple channels, for example, the RGB image data includes pixel values of different channels such as R, G, and B. Alternatively, the processing circuit 4360 can convert the light intensity data of visible light of different sub-wavebands into image brightness (Y) components and color (U, V) components, and output them as pixel values of pixels. The sensing data can include brightness components and color components.

[0409] In some embodiments, the integrated circuit 4300 can further include a counting circuit 4324. The counting circuit 4324 can record the number of triggers of the second electrical signal in the first photodetection region in the first photodetection region array for light intensity measurement.

[0410] For example, the second array of photodetection regions can include a SPAD1, and the filter region corresponding to the SPAD1 can be transparent to red light. The counting circuit 4321 can be electrically connected to the SPAD1, and count the number of photons of red light detected by the SPAD1. The second array of photodetection regions can further include a SPAD2, and the filter region corresponding to the SPAD2 can be transparent to green light. The counting circuit 4322 can be electrically connected to the SPAD2, and count the number of photons of green light detected by the SPAD2. The second array of photodetection regions can further include a SPAD3, and the filter region corresponding to the SPAD3 can be transparent to blue light. The counting circuit 4323 can be electrically connected to the SPAD3, and count the number of photons of blue light detected by the SPAD3. Optionally, the first array of photodetection regions can include a SPAD4. The counting circuit 4324 can be electrically connected to the SPAD4, and count the number of photons of SWIR light detected by the SPAD4.

[0411] The depth determination circuit 4325 can receive the second electrical signal and process the second electrical signal into depth data. For example, the depth determination circuit 4325 can determine the depth data based on a time-of-flight method. The time-of-flight determination method can have various implementations, such as one or more of time-correlated single photon counting (TCSPC), single photon single detection (SPSD), time-to-digital converter (TDC), time-to-amplitude converter (TAC), analog-to-digital converter (ADC), indirect time of flight (i-ToF), or direct time of flight (d-ToF). The present disclosure does not limit the circuit structure in the depth determination circuit 4325 or the way for depth measurement.

[0412] The processing circuit 4360 receives the light intensity data and the depth data, and outputs the sensing data after processing the light intensity data and the depth data. The processing circuit 4360 can perform processing such as multi-channel fusion or output format conversion, for example. With the above semiconductor device structure, the light intensity data and the depth data can be collected simultaneously, and the processing circuit 4360 can achieve the association of the light intensity data and the depth data in space or time by simple time window alignment. The data processing complexity is low, and the overhead is relatively small. The processing circuit 4360 can perform multi-channel fusion in a pixel unit: matching the light intensity data of a pixel with the depth data corresponding thereto to obtain three-dimensional image data of the pixel including the light intensity data and the depth data. For example, assuming that the light intensity data of a pixel 1 includes (R = 255, G = 128, B = 64) and the depth data includes 2.5 meters, the fused data format can include {"pixel":{"R":255,"G":128,"B":64,"D":2.5}} for example. The processing circuit 4360 fuses the light intensity data and the depth data to generate more accurate three-dimensional image data such as RGBD data. The three-dimensional image data can provide more abundant environmental data, greatly improving the sensing ability of the sensing device to the environment.

[0413] The interface circuit 4380 can be used to communicate with other circuits or devices in the sensing device. The communication protocol supported by the interface circuit can be set based on the bus type to which the interface circuit 4380 is connected with other circuits or devices, and the present disclosure does not make any limitation thereto.

[0414] The integrated circuit can have various reading modes for pixels, which can include independent reading, column or row-based reading, or cluster reading, for example. Independent reading is a reading mode in a pixel unit. In independent reading, a pixel can be read by an independent circuit resource. For example, sub-circuits in the integrated circuit can be connected with each other through a bus interface and a synchronization signal to implement a high-resolution and high-precision RGBD imaging system. In column or row-based reading, pixels in the same column or row share circuit resources such as data bus resources. This mode can be suitable for a rolling shutter method and improve data reading efficiency. In cluster reading, pixels share resources on a cluster basis to further improve data reading efficiency. A cluster can include multiple columns or multiple rows of pixels, and can also be referred to as a pixel cluster.

[0415] For example, in some embodiments, the integrated circuit can receive the first electrical signal and the second electrical signal in units of pixels, in units of pixel groups, or in units of pixel clusters. Similar to the above description, a pixel corresponds to a pixel structure. A pixel group includes pixels corresponding to pixel structures in the same column or the same row. A pixel cluster includes pixels corresponding to pixel structures in multiple columns or multiple rows. The description of the pixel structure can refer to the description of the embodiment shown in FIG. 41 above. That is, the pixel structure includes an array of light filtering regions, an array of second photodetecting regions, and an array of first photodetecting regions corresponding in position.

[0416] FIG. 44 shows an example diagram of a readout mode consistent with some embodiments of the present disclosure. Referring to FIG. 44, the readout mode corresponds to receiving the first electrical signal and the second electrical signal in units of pixels. Referring to FIG. 44, a box represents a pixel, and a pixel in the pixel array can be read by independent circuit traces. FIG. 45 shows an example diagram of another readout mode consistent with some embodiments of the present disclosure. Referring to FIG. 45, the readout mode corresponds to receiving the first electrical signal and the second electrical signal in units of pixel groups. For example, the pixel group includes pixels in the same column, and the pixels in the same column share data bus resources. FIG. 46 shows an example diagram of yet another readout mode consistent with some embodiments of the present disclosure. Referring to FIG. 46, the readout mode corresponds to receiving the first electrical signal and the second electrical signal in units of pixel clusters. The pixels share resources on a cluster basis, and the pixels in a cluster share resources for data reading and processing.

[0417] In some embodiments, the integrated circuit is configured to determine point cloud data with color intensity information based on the first electrical signal C1 and the second electrical signal C2. The semiconductor device provided by the embodiments of the present disclosure can be used in a laser receiving circuit of a laser radar (light detection and ranging, LiDAR) to obtain point cloud data with color intensity information, thereby increasing the detection performance of the laser radar.

[0418] In some embodiments, the semiconductor device can further include a band rejection filter layer. The band rejection filter layer can filter out light in the first infrared waveband and transmit SWIR light. Referring to FIG. 41, the band rejection filter layer can be located above the first circuit layer, for example, between the first circuit layer and the second circuit layer, or between the second circuit layer and the filter layer, or above the filter layer. The light in the first infrared waveband is non-target infrared light, for example, the non-target infrared light includes light other than SWIR light or NIR in the infrared light. In some embodiments, the light in the first waveband includes SWIR light, and the light in the first infrared waveband can include NIR light. Although most of the non-target infrared near-infrared light can be absorbed in the filter layer, the band rejection filter layer can further reduce the non-target infrared light from entering the first circuit layer. In some embodiments, the band rejection filter layer can include a near-infrared band rejection filter layer.

[0419] Based on similar technical concepts, the present disclosure further provides a sensing device including any one of the semiconductor devices disclosed in the above embodiments. For example, the sensing device includes a three-dimensional vision sensor.

[0420] In some embodiments, the band rejection filter layer can not be provided in the semiconductor device. Alternatively, a band rejection filter can be provided in the sensing device, which can filter out light in the first infrared waveband from the semiconductor device and transmit short-wave infrared light. For example, a near-infrared band rejection filter can be added to the lens of the sensing device.

[0421] Based on similar technical concepts, the present disclosure further provides an electronic device including the sensing device disclosed in the above embodiments. The type of electronic device can be various, for example, the electronic device can include consumer electronics (for example, a mobile phone, a computer, or a smart wearable device, etc.), a laser radar, a security device, a photography or video device, an industrial terminal, or a medical device, etc.

[0422] Finally, it should be noted that the above only describes the embodiments of the present disclosure and is not intended to limit the present disclosure. Although the present disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent replacements to some technical features. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A semiconductor device, comprising a first pixel, a second pixel and a third pixel, wherein the first pixel comprises a first SPAD cell configured to sense light of a first wavelength range to measure depth, wherein the first SPAD cell comprises one or more SPADs; the second pixel comprises a second SPAD cell configured to sense light of a second wavelength range, wherein the second SPAD cell comprises one or more SPADs, the third pixel comprises a third SPAD cell configured to sense light of a third wavelength range, wherein the third SPAD cell comprises one or more SPADs, wherein the third wavelength range is greater than the first wavelength range, and the third wavelength range is greater than the second wavelength range.

2. The semiconductor device of claim 1, wherein the third pixel does not comprise a filter.

3. The semiconductor device of any one of claims 1-2, wherein the first SPAD cell of the first pixel, the second SPAD cell of the second pixel and the third SPAD cell of the third pixel are formed on a same circuit layer.

4. The semiconductor device of any one of claims 1-3, wherein the semiconductor device comprises a plurality of first pixels, a plurality of second pixels and a plurality of third pixels, and a proportion of the plurality of third pixels is greater than 30% and less than or equal to 90% among the plurality of first pixels, the plurality of second pixels and the plurality of third pixels.

5. The semiconductor device of claim 4, wherein the proportion of the plurality of third pixels is greater than 50% and less than or equal to 70%.

6. The semiconductor device of any one of claims 1-2, wherein the semiconductor device comprises a plurality of third pixels, the semiconductor device comprises a first region and a second region, the first region is closer to a center of the semiconductor device than the second region, and a proportion of the plurality of third pixels in the second region is higher than a proportion of the plurality of third pixels in the first region.

7. The semiconductor device of any one of claims 1-2, wherein the semiconductor device comprises a plurality of first pixels, a plurality of second pixels and a plurality of third pixels, and the plurality of first pixels and the plurality of second pixels are uniformly dispersed in the plurality of third pixels.

8. The semiconductor device of any one of claims 1-2, wherein the first pixel is surrounded by 4-9 third pixels; or the second pixel is surrounded by 4-9 third pixels.

9. The semiconductor device of claim 8, wherein the first pixel is surrounded by 6-8 third pixels; or the second pixel is surrounded by 6-8 third pixels.

10. The semiconductor device of any one of claims 1-2, wherein the semiconductor device comprises a plurality of second pixels, the plurality of second pixels form a second pixel cluster, and the second pixel cluster is surrounded by at least 6 third pixels; or the semiconductor device comprises a plurality of first pixels, the plurality of first pixels form a first pixel cluster, and the first pixel is surrounded by at least 6 third pixels.

11. The semiconductor device of claim 1, the first SPAD cell formed on a first circuit layer, the second and third SPAD cells formed on a second circuit layer, wherein the second circuit layer is stacked on the first circuit layer, wherein a projection of the first SPAD cell on a plane perpendicular to a stacking direction overlaps at least partially with a projection of the second and third SPAD cells on the plane.

12. The semiconductor device of claim 11, wherein the second pixel comprises a second filter disposed on a side of the second SPAD cell, the second filter configured to allow light of the first and second wavelength ranges to pass through.

13. The semiconductor device of claim 1, wherein the first and second SPAD cells comprise a shared SPAD.

14. The semiconductor device of claim 13, wherein a filter is disposed on a side of the shared SPAD, the filter configured to allow light of the first and second wavelength ranges to pass through, the shared SPAD cell configured to sense light of the first wavelength range in a first time period and sense light of the second wavelength range in a second time period.

15. The semiconductor device of claim 1, wherein the first and third SPAD cells comprise a shared SPAD.

16. The semiconductor device of claim 15, wherein a filter is disposed on a side of the shared SPAD, the filter configured to allow light of the first and third wavelength ranges to pass through, the shared SPAD cell configured to sense light of the first wavelength range in a third time period and sense light of the third wavelength range in a fourth time period.

17. The semiconductor device of any one of claims 1-2, wherein the third wavelength range at least partially overlaps with a wavelength range of visible light.

18. A sensing device, comprising: a semiconductor device as claimed in any one of claims 1-17; and a data processing device configured to receive signals output by the first, second, and third pixels of the semiconductor device to determine information of a surrounding environment.

19. The sensing device of claim 18, wherein the data processing device is configured to determine color information based at least on the signals output by the second pixel; determine light intensity information based at least on the signals output by the third pixel.

20. The sensing device of claim 18, further comprising an emitter, the emitting unit configured to emit a light beam, a wavelength of the light beam being within the first wavelength range, the data processing device configured to determine depth information based on a time instance when the light beam is emitted and a time instance when the first pixel receives light of the first wavelength range.

21. The sensing device of claim 18, wherein the data processing device is configured to perform at least one of: determine color information of the first and third pixels based at least on the signals output by the second pixel; determining luminance information of the second pixel based on at least the signal output by the third pixel; determining color information of the first pixel based on at least the signals output by the second and third pixels; or determining color information of the first and third pixels based on at least the signal output by the second pixel and the signal output by the first pixel.

22. The sensing device of claim 21, wherein the data processing device is configured to generate image data from the signal output by the second pixel, the color information of the first pixel, and the color information of the third pixel.

23. The sensing device of claim 22, wherein the data processing device is configured to generate image data in terms of macro-pixels, wherein a macro-pixel comprises at least two of the first pixel, the second pixel, and the third pixel; the data processing device is configured to determine depth information of the macro-pixel from the signal output by the first pixel, to determine color information of the macro-pixel from the signal output by the second pixel, and to determine luminance information of the macro-pixel from the signal output by the third pixel.

24. The sensing device of claim 23, wherein the sensing device comprises a plurality of macro-pixels, and a center-to-center spacing between adjacent macro-pixels is less than a size of the macro-pixels.

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