Light detection device, imaging device, and electronic apparatus

Abstract

The present disclosure pertains to a light detection device, an imaging device, and an electronic apparatus with which it is possible to improve sensitivity and acquire appropriate phase difference information while suppressing color mixing. A reflection wall having a refractive index lower than a predetermined refractive index is provided between respective color filters of pixels including a regular pixel and a phase difference pixel having a light shielding film for detecting phase difference. An end part of the light shielding film is formed so as to extend below the reflection wall, where the incidence direction of incident light on a pixel is from above to below. The present disclosure can be applied to a light detection device.

Description

Optical detection device, imaging device, and electronic device

[0001] The present disclosure relates to an optical detection device, an imaging device, and an electronic device, and particularly to an optical detection device, an imaging device, and an electronic device that can suppress color mixing, improve sensitivity, and obtain appropriate phase difference information.

[0002] In a solid-state imaging device such as a CMOS image sensor, light incident on the on-chip lens (microlens) of a certain pixel is subject to color mixing and a decrease in sensitivity associated with color mixing due to oblique light incident obliquely on an adjacent pixel. This phenomenon occurs in all pixels. For example, the same phenomenon also occurs in phase difference pixels, so appropriate phase difference information may not be obtained, and there is a risk that focus adjustment cannot be performed properly.

[0003] Therefore, a technique has been proposed in which a light shielding wall is provided between pixels to improve color mixing caused by oblique light, obtain phase difference information in phase difference pixels, and focus (see, for example, Patent Document 1).

[0004] International Publication No. 2016 / 114154

[0005] However, in the case of the invention described in Patent Document 1 mentioned above, although color mixing is suppressed by the light shielding wall, since part of the light is absorbed by the light shielding wall, there is a limit to improving sensitivity.

[0006] The present disclosure has been made in view of such a situation, and particularly aims to suppress color mixing, improve sensitivity, and obtain appropriate phase difference information.

[0007] The optical detection device, imaging device, and electronic device according to the first aspect of the present disclosure include a phase difference pixel having a light shielding film for detecting a phase difference, a normal pixel, and a reflection wall having a refractive index lower than a predetermined refractive index between color filters for each pixel including the phase difference pixel and the normal pixel. When the incident direction of light incident on the pixel is from above to below, the end of the light shielding film is formed so as to dive below the reflection wall.

[0008] In a first aspect of this disclosure, a reflective wall having a refractive index lower than a predetermined refractive index is provided between a phase difference pixel having a light-shielding film for detecting a phase difference, a normal pixel, and a color filter for each pixel including the phase difference pixel and the normal pixel, and when the direction of incidence of light to the pixel is from top to bottom, the end of the light-shielding film is formed to tuck into the lower part of the reflective wall.

[0009] The photodetector, imaging device, and electronic device of the second aspect of the present disclosure comprises an OCL (On Chip Lens), a pixel unit consisting of at least one pixel, and a light-shielding film formed on the outer periphery where the pixel unit is arranged, wherein the light-shielding film is formed between a first intersection where inter-pixel separation structures separating the pixels intersect, and a second intersection adjacent to the first intersection, within the range of the outer periphery where the pixel unit is formed.

[0010] In a second aspect of this disclosure, the same OCL (On Chip Lens), a pixel unit consisting of at least one pixel, and a light-shielding film formed on the outer periphery where the pixel unit is arranged are provided, wherein the light-shielding film is formed between a first intersection where inter-pixel separation structures separating the pixels intersect, and a second intersection adjacent to the first intersection, within the range of the outer periphery where the pixel unit is formed.

[0011] This is a diagram illustrating an example configuration of the light detection device of the present disclosure. This is a diagram illustrating the circuit configuration of a pixel of the present disclosure. This is a side cross-sectional view of the pixel structure of the first embodiment of the present disclosure. This is a top view of the pixel structure of the first embodiment of the present disclosure. This is a top view of the pixel structure of the first modified example of the first embodiment of the present disclosure. This is a side cross-sectional view of the pixel structure of the second modified example of the first embodiment of the present disclosure. This is a top view of the pixel structure of the second modified example of the first embodiment of the present disclosure. This is a side cross-sectional view of the pixel structure of the third modified example of the first embodiment of the present disclosure. This is a side cross-sectional view of the pixel structure of the fourth modified example of the first embodiment of the present disclosure. This is a side cross-sectional view of the pixel structure of the second embodiment of the present disclosure. This is a top view of the pixel structure of the second embodiment of the present disclosure. This is a top view of the pixel structure of the first modified example of the second embodiment of the present disclosure. This is a side cross-sectional view of the pixel structure of the second modified example of the second embodiment of the present disclosure. This is a top view of the pixel structure of the second modified example of the second embodiment of the present disclosure. This is a side cross-sectional view of the pixel structure of the third modified example of the second embodiment of the present disclosure. This is a side cross-sectional view of the pixel structure of the fourth modified example of the second embodiment of the present disclosure. This is a side cross-sectional view of a pixel structure according to the third embodiment of the present disclosure. This is a side cross-sectional view of a pixel structure according to the fourth embodiment of the present disclosure. This is a side cross-sectional view of a pixel structure according to the fifth embodiment of the present disclosure. This is a side cross-sectional view of a pixel structure according to the sixth embodiment of the present disclosure. This is a side cross-sectional view of a pixel structure according to the seventh embodiment of the present disclosure. This is a side cross-sectional view of a pixel structure according to the eighth embodiment of the present disclosure. This is a top view of a pixel structure according to the eighth embodiment of the present disclosure. This is a top view of a pixel structure according to the first modified example of the eighth embodiment of the present disclosure. This is a side cross-sectional view of a pixel structure according to the second modified example of the eighth embodiment of the present disclosure. This is a top view of a pixel structure according to the second modified example of the eighth embodiment of the present disclosure. This is a side cross-sectional view of a pixel structure according to the third modified example of the eighth embodiment of the present disclosure. This is a side cross-sectional view of a pixel structure according to the fourth modified example of the eighth embodiment of the present disclosure. This is a side cross-sectional view of a pixel structure according to the ninth embodiment of the present disclosure. This is a top view of a pixel structure according to the ninth embodiment of the present disclosure. This is a top view of a pixel structure according to the first modified example of the ninth embodiment of the present disclosure. This is a side cross-sectional view of a pixel structure according to the tenth embodiment of the present disclosure. This is a side cross-sectional view of a pixel structure of a first modified example of the tenth embodiment of the present disclosure.This is a side cross-sectional view of a pixel structure of a second modification of the tenth embodiment of the present disclosure. This is a side cross-sectional view of a pixel structure of an eleventh embodiment of the present disclosure. This is a side cross-sectional view of a pixel structure of a first modification of the eleventh embodiment of the present disclosure. This is a side cross-sectional view of a pixel structure of a second modification of the eleventh embodiment of the present disclosure. This is a side cross-sectional view of a pixel structure of a twelfth embodiment of the present disclosure. This is a side cross-sectional view illustrating the effect of the pixel structure of the twelfth embodiment of the present disclosure. This is a side cross-sectional view of a pixel structure of a first modification of the twelfth embodiment of the present disclosure. This is a side cross-sectional view of a pixel structure of a second modification of the twelfth embodiment of the present disclosure. This is a side cross-sectional view of a pixel structure of a thirteenth embodiment of the present disclosure. This is a side cross-sectional view of a pixel structure of a fourteenth embodiment of the present disclosure. This is a diagram illustrating a method for manufacturing a photodetector of the pixel structure of the first embodiment of the present disclosure. This is a diagram illustrating a method for manufacturing a photodetector top view illustrating a pixel unit of the present disclosure. This is a top view and side cross-sectional view of the layer on which the light-shielding film is formed in the pixel structure of the fifteenth embodiment of the present disclosure. Figure 50 illustrates the areas where the light-shielding film of the pixel structure is not properly formed. This is a top view of the layer on which the light-shielding film of the pixel structure of the 16th embodiment of this disclosure is formed. This is a top view of the layer on which the light-shielding film of the pixel structure of the first modified example of the 16th embodiment of this disclosure is formed. This is a top view and side cross-sectional view of the layer on which the light-shielding film of the pixel structure of the second modified example of the 16th embodiment of this disclosure is formed. This is a top view and side cross-sectional view of the layer on which the light-shielding film of the pixel structure of the third modified example of the 16th embodiment of this disclosure is formed. This is a top view of the layer on which the light-shielding film of the pixel structure of the fourth modified example of the 16th embodiment of this disclosure is formed. This is a top view of the layer on which the light-shielding film of the pixel structure of the fifth modified example of the 16th embodiment of this disclosure is formed. This is a side cross-sectional view of the pixel structure of the 17th embodiment of this disclosure. This is a side cross-sectional view of the pixel structure of the seventeen eighteenth embodiment of this disclosure. This is a side cross-sectional view of the pixel structure of the nineteenth embodiment of this disclosure. This is a side cross-sectional view of the pixel structure of the twentieth embodiment of this disclosure. This is a side cross-sectional view of a pixel structure according to the 21st embodiment of the present disclosure.This is a side cross-sectional view of a pixel structure according to the 22nd embodiment of this disclosure. This is a side cross-sectional view of a pixel structure according to the 23rd embodiment of this disclosure. This is a top view of the layer on which a light-shielding film is formed for a pixel structure according to the 24th embodiment of this disclosure. This is a top view of the layer on which a light-shielding film is formed for a first modified pixel structure according to the 24th embodiment of this disclosure. This is a top view of the layer on which a light-shielding film is formed for a second modified pixel structure according to the 24th embodiment of this disclosure. This is a top view of the layer on which a light-shielding film is formed for a third modified pixel structure according to the 24th embodiment of this disclosure. This is a top view and side cross-sectional view of the layer on which a light-shielding film is formed for a pixel structure according to the 25th embodiment of this disclosure. This is a top view of the layer on which a light-shielding film is formed for a pixel structure according to the 26th embodiment of this disclosure. This is a diagram showing an example of the configuration of an imaging device in the 27th embodiment. This is a diagram showing an example of the arrangement of phase difference detection pixels in the 27th embodiment. This is a diagram showing an example of the planar configuration of phase difference detection pixels in the 27th embodiment. This is a diagram illustrating an example of the cross-sectional configuration of a phase difference detection pixel in the 27th embodiment. This is a diagram illustrating an example of the cross-sectional configuration of a phase difference detection pixel in the 27th embodiment. This is a diagram illustrating the shape of the notch. This is a diagram illustrating the shape of the notch. This is a diagram illustrating an example of the planar configuration of a phase difference detection pixel in the 28th embodiment. This is a diagram illustrating an example of the cross-sectional configuration of a phase difference detection pixel in the 28th embodiment. This is a diagram illustrating the effect of configuring it in a tapered shape. This is a diagram illustrating an example of the configuration of a phase difference detection pixel in the 29th embodiment. This is a diagram illustrating an example of the cross-sectional configuration of a phase difference detection pixel in the 29th embodiment. This is a diagram illustrating the manufacturing of a phase difference detection pixel. This is a diagram illustrating an example of the cross-sectional configuration of a phase difference detection pixel in the 30th embodiment. This is a diagram illustrating an example of the cross-sectional configuration of a phase difference detection pixel in the 31st embodiment. This is a diagram illustrating an example of the cross-sectional configuration of a phase difference detection pixel in the 31st embodiment. This is a diagram illustrating an example of the cross-sectional configuration of a phase difference detection pixel in the 32nd embodiment. This is a diagram illustrating an example of the cross-sectional configuration of a phase difference detection pixel in the 32nd embodiment.This figure shows an example of a cross-sectional configuration of a phase difference detection pixel in the 32nd embodiment. This figure shows an example of a planar configuration of a phase difference detection pixel in the 33rd embodiment. This figure shows an example of a cross-sectional configuration of a phase difference detection pixel in the 33rd embodiment. This figure shows an example of a planar configuration of a phase difference detection pixel in the 33rd embodiment. This figure shows an example of a planar configuration of a phase difference detection pixel in the 33rd embodiment. This figure shows an example of a planar configuration of a phase difference detection pixel in the 33rd embodiment. This figure shows an example of a planar configuration of a phase difference detection pixel in the 33rd embodiment. This figure is for explaining the image height. This figure shows an example of the configuration of a phase difference detection pixel in the 34th embodiment. This figure shows an example of the configuration of a phase difference detection pixel in the 34th embodiment. This figure shows an example of a cross-sectional configuration of a phase difference detection pixel in the 35th embodiment. This figure shows an example of a cross-sectional configuration of a phase difference detection pixel in the 36th embodiment. This figure shows an example of a cross-sectional configuration of a phase difference detection pixel in the 36th embodiment. This figure shows an example of a cross-sectional configuration of a phase difference detection pixel in the 36th embodiment. This figure shows an example of a cross-sectional configuration of a phase difference detection pixel in the 37th embodiment. This figure shows an example of the cross-sectional configuration of a phase difference detection pixel in the 37th embodiment. This figure shows an example of the cross-sectional configuration of a phase difference detection pixel in the 37th embodiment. This block diagram shows an example of the configuration of an imaging device as an electronic device to which the optical detection device of the present disclosure is applied. This figure illustrates an example of the use of an optical detection device to which the technology of the present disclosure is applied. This figure shows an example of the schematic configuration of an endoscopic surgical system. This block diagram shows an example of the functional configuration of a camera head and a CCU. This block diagram shows an example of the schematic configuration of a vehicle control system. This is an explanatory diagram showing an example of the installation position of an external information detection unit and an imaging unit.

[0012] Preferred embodiments of this disclosure will be described in detail below with reference to the attached drawings. In this specification and the drawings, components having substantially the same functional configuration are denoted by the same reference numerals, and redundant descriptions will be omitted.

[0013] The following describes embodiments for implementing this technology. The description will proceed in the following order: 1. First Embodiment 1-1. First Modification of the First Embodiment 1-2. Second Modification of the First Embodiment 1-3. Third Modification of the First Embodiment 1-4. Fourth Modification of the First Embodiment 2. Second Embodiment 2-1. First Modification of the Second Embodiment 2-2. Second Modification of the Second Embodiment 2-3. Third Modification of the Second Embodiment 2-4. Fourth Modification of the Second Embodiment 3. Third Embodiment 4. Fourth Embodiment 5. Fifth Embodiment 6. Sixth Embodiment 7. Seventh Embodiment 8. Eighth Embodiment 8-1. First Modification of the Eighth Embodiment 8-2. Second Modification of the Eighth Embodiment 8-3. Third Modification of the Eighth Embodiment 8-4. Fourth Modification of the Eighth Embodiment 9. Ninth Embodiment 9-1. 10. First Modification of the Ninth Embodiment 10-1. First Modification of the Tenth Embodiment 10-2. Second Modification of the Tenth Embodiment 11. 11-1. First Modification of the Eleventh Embodiment 11-2. Second Modification of the Eleventh Embodiment 12. 12-1. First Modification of the Twelfth Embodiment 12-2. Second Modification of the Twelfth Embodiment 13. 14. 14. 15. Method for Manufacturing a Photodetector 16. 15. Fifteenth Embodiment 17. 16. 17-1. First Modification of the Sixteenth Embodiment 17-2. Second Modification of the Sixteenth Embodiment 17-3. Third Modification of the Sixteenth Embodiment 17-4. Fourth Modification of the Sixteenth Embodiment 17-5. 18. Fifth modification of the 16th embodiment 18-1. Modification of the 17th embodiment 19. 18th embodiment 20. 19th embodiment 21. 20th embodiment 22. 21st embodiment 23. 22nd embodiment 24. 23rd embodiment 25. 24th embodiment 25-1. First modification of the 24th embodiment 25-2. Second modification of the 24th embodiment25-3. Third Modification of the 24th Embodiment 26. 25th Embodiment 27. 26th Embodiment 28. 27th Embodiment 29. 28th Embodiment 30. 29th Embodiment 31. 30th Embodiment 32. 31st Embodiment 33. 32nd Embodiment 34. 33rd Embodiment 35. 34th Embodiment 36. 35th Embodiment 37. 36th Embodiment 38. 37th Embodiment 39. Application to Electronic Devices 40. Example of Use of Photodetector 41. Example of Application to Endoscopic Surgical Systems 42. Example of Application to Mobile Devices

[0014] <<1. First Embodiment>> <Configuration of Photodetector> Figure 1 is a diagram showing an example of the configuration of a photodetector according to the present disclosure. The photodetector 1 in Figure 1 consists of a pixel region (so-called imaging region) 3 in which a plurality of pixels 13 containing photoelectric conversion elements are regularly arranged in two dimensions on a semiconductor substrate 2, for example, a silicon substrate, and a peripheral circuit section.

[0015] Pixel 13 is composed of, for example, a photodiode, which acts as a photoelectric conversion element, and a plurality of pixel transistors (so-called MOS transistors). The plurality of pixel transistors are, for example, a transfer transistor, a capacitive switching transistor, a reset transistor, an amplification transistor, and a selection transistor. Pixel 13 can also be a shared pixel structure. This shared pixel structure is composed of a single floating diffusion region shared by a plurality of photodiodes and a plurality of transfer transistors, and one other pixel transistor shared by each of these regions.

[0016] The peripheral circuit section consists of a vertical drive circuit 4, a column signal processing circuit 5, a horizontal drive circuit 6, an output circuit 7, and a control circuit 8.

[0017] The control circuit 8 receives the input clock and data that commands the operating mode, and outputs data such as internal information of the light detection device 1. In other words, the control circuit 8 generates clock signals and control signals that serve as the reference for the operation of the vertical drive circuit 4, column signal processing circuit 5, and horizontal drive circuit 6, etc., based on the vertical synchronization signal, horizontal synchronization signal, and master clock. The control circuit 8 then inputs these signals to the vertical drive circuit 4, column signal processing circuit 5, horizontal drive circuit 6, etc.

[0018] The vertical drive circuit 4 is composed of, for example, a shift register, and selects the pixel drive wiring 12, supplies pulses to the selected pixel drive wiring to drive the pixels, and drives the pixels row by row. That is, the vertical drive circuit 4 sequentially selects and scans each pixel 13 of the pixel region 3 in the vertical direction row by row, and supplies a pixel signal based on the signal charge generated in accordance with the amount of light received in, for example, a photodiode which is a photoelectric conversion element of each pixel 13, through the vertical signal line 9 to the column signal processing circuit 5.

[0019] The column signal processing circuit 5 is arranged for each pixel 13, for example, in each column, and performs signal processing such as noise reduction on the signals output from each row of pixels 13 for each pixel column. In other words, the column signal processing circuit 5 performs signal processing such as CDS (Correlated Double Sampling) to remove fixed pattern noise specific to the pixels 13, signal amplification, and AD conversion. A horizontal selection switch (not shown) is provided at the output stage of the column signal processing circuit 5, connected to the horizontal signal line 10.

[0020] The horizontal drive circuit 6 is composed of, for example, a shift register, and sequentially outputs horizontal scanning pulses to select each of the column signal processing circuits 5 in order, causing each of the column signal processing circuits 5 to output a pixel signal to the horizontal signal line 10.

[0021] The output circuit 7 processes the signals supplied sequentially from each of the column signal processing circuits 5 through the horizontal signal line 10 and outputs them. For example, it may only perform buffering, or it may perform black level adjustment, column variation correction, and various digital signal processing. The input / output terminal 11 exchanges signals with the outside.

[0022] <Example of Circuit Configuration of Light Detection Device> Next, an example of the circuit configuration of the pixel 13 constituting the light detection device 1 will be described with reference to Figure 2. Figure 2 is a circuit diagram showing an example of the circuit configuration of the pixel 13 of this disclosure.

[0023] The pixel 13 in Figure 1 comprises a photoelectric conversion unit (PD) 21, a transfer transistor (TRG) 22, a charge holding unit (FD) 23, a capacitance switching transistor (FDG) 24, an additional capacitance unit 25, a reset transistor (RST) 26, a power supply (VDD) that supplies power to the pixel 13, an amplification transistor (AMP) 27, and a selection transistor (SEL) 28.

[0024] The anode of the photoelectric conversion unit 21 is grounded, and its cathode is connected to the source of the transfer transistor 22. The drain of the transfer transistor 22 is connected via the charge holding unit 23 to the source of the reset transistor 26, the gate of the amplification transistor 27, and the source of the capacitance switching transistor 24. The drain of the capacitance switching transistor 24 is connected to one end of the additional capacitance unit 25. The other end of the additional capacitance unit 25 is grounded. The drain of the reset transistor 26 is connected to the power supply VDD. The drain of the amplification transistor 27 is connected to the power supply VDD, and its source is connected to the drain of the selection transistor 28. The source of the selection transistor 28 is connected to the signal line (VSL) 9.

[0025] The photoelectric conversion unit 21 performs photoelectric conversion of incident light and can be composed of a photodiode formed on a semiconductor substrate. The photoelectric conversion unit 21 performs photoelectric conversion of incident light during the exposure period and retains the charge generated by the photoelectric conversion.

[0026] The charge holding section 23 holds the charge generated by the photoelectric conversion section 21. The charge holding section 23 can be composed of a floating diffusion region (FD), which is a semiconductor region formed on a semiconductor substrate.

[0027] The transfer transistor 22 is responsible for transferring electric charge. The transfer transistor 22 transfers the charge generated by the photoelectric conversion of the photoelectric conversion unit 21 to the charge holding unit 23. The transfer transistor 22 transfers the charge by creating electrical conductivity between the photoelectric conversion unit 21 and the charge holding unit 23. The control signals of the transfer transistor 22 are transmitted via signal lines TRG.

[0028] An additional capacitance unit 25 is further connected to the charge holding unit 23 via a capacitance switching transistor 24. The capacitance switching transistor 24 is controlled to be on or off in accordance with the drive signal FDG, thereby switching the charge holding unit 23 and the additional capacitance unit 25 between an electrically connected state and an unconnected state.

[0029] As a result, when the drive signal FDG is supplied to the gate electrode constituting the capacitance switching transistor 24 and controlled to turn on, the potential directly below the capacitance switching transistor 24 deepens, and the charge holding unit 23 and the additional capacitance unit 25 become electrically connected.

[0030] On the other hand, if the drive signal FDG is not supplied to the gate electrode constituting the capacitance switching transistor 24 and it is controlled to be off, the potential directly below the capacitance switching transistor 24 becomes shallower, and the charge holding unit 23 and the additional capacitance unit 25 become electrically disconnected (disconnected).

[0031] Therefore, by controlling the capacitance switching transistor 24 to be on or off by the drive signal FDG, it is possible to switch between a state in which the capacitance of the additional capacitance unit 25 is added to the capacitance of the charge holding unit 23, or a state in which it is not added, thereby switching the pixel sensitivity (switching the conversion efficiency).

[0032] In the example circuit configuration of pixel 13 in Figure 2, a configuration is shown in which a capacitance switching transistor 24 and an additional capacitance unit 25 are provided to enable switching of pixel sensitivity. However, if it is not necessary to switch the pixel sensitivity, the capacitance switching transistor 24 and the additional capacitance unit 25 may be omitted.

[0033] The reset transistor 26 resets the charge holding unit 23 (and, if the capacitance switching transistor 24 is on, the additional capacitance unit 25 as well). This reset is performed by conducting electricity between the charge holding unit 23 (and the additional capacitance unit 25) and the power supply VDD to discharge the charge from the charge holding unit 23 (and the additional capacitance unit 25). The control signal for the reset transistor 26 is transmitted via the signal line RST.

[0034] The amplifying transistor 27 amplifies the voltage of the charge holding section 23 (and the additional capacitance section 25). The gate of the amplifying transistor 27 is connected to the charge holding section 23 (and the additional capacitance section 25). Therefore, an image signal of a voltage corresponding to the charge held in the charge holding section 23 (and the additional capacitance section 25) is generated at the source of the amplifying transistor 27. Furthermore, by making the selection transistor 28 conduct, this image signal can be output to the signal line (VSL) 9. The control signal of the selection transistor 28 is transmitted via the signal line SEL.

[0035] In the above, the pixels 13 have been described as having a uniform configuration that generates a pixel signal corresponding to the amount of incident light. However, the pixels 13 include at least those that generate a normal pixel signal, those that generate a phase difference signal, and those that generate a pixel signal in the dark. Hereafter, in addition to the normal pixels that generate a normal pixel signal, pixels that generate phase difference information will be called phase difference pixels, and pixels that generate pixel signals in the dark will also be called light-shielding pixels (OPB (Optical Black) pixels).

[0036] Furthermore, most of the pixels 13 formed in the pixel region 3 are normal pixels. In addition, a phase-difference pixel is a pixel in which a light-shielding region is formed on either the left or right side of the incident surface in the pixel structure.

[0037] More specifically, the phase difference pixels come in two types: Type A, in which the left half of the light-receiving surface of the photodiode PD forming the photoelectric conversion unit 21 is opened by a light-shielding film 58 (Figure 3), and Type B, in which the right half is opened. These two types are paired and arranged at predetermined positions in the pixel region 3.

[0038] Due to the difference in the aperture formation position, image shift occurs between the pixel signals from Type A and Type B. By calculating the phase shift amount from this image shift and determining the defocus amount, autofocus can be achieved by adjusting (moving) the focus lens.

[0039] Furthermore, in the op-op pixel (OPB), a light-shielding region is set across the entire light-receiving surface of the photodiode PD that forms the photoelectric conversion unit 21. The pixel signal is always detected in the dark, and the pixel signal generated by thermal noise is determined and used as an offset in the normal pixel.

[0040] <Example of Pixel Physical Configuration> Next, with reference to Figures 3 and 4, the pixel structure, which is the physical configuration of pixel 13, will be described.

[0041] Figures 3 and 4 are a side cross-sectional view and a top view of a pixel structure 31, respectively, which includes a pixel 13s consisting of a phase difference pixel (left side in the figure) and a pixel 13 consisting of a normal pixel (right side in the figure). More specifically, Figure 3 is a side cross-sectional view of the pixel 13s consisting of a phase difference pixel (left side in the figure) and a pixel 13 consisting of a normal pixel (right side in the figure), which is the AB section in Figure 4. Figure 4 is a top view of the pixel structure 31 as seen from the direction of incidence of incident light, in the case where a total of four pixels 13, 13s are arranged in a 2x2 grid horizontally x vertically, with one pixel 13s consisting of a phase difference pixel located in the lower left of the figure, and the other three pixels being normal pixels.

[0042] Furthermore, in the following, in order to distinguish between normal pixels and phase-difference pixels, normal pixels will also be referred to as pixel 13 or normal pixel 13, and phase-difference pixels will also be referred to as pixel 13s or phase-difference pixel 13s.

[0043] Pixels 13 and 13s are composed of a lens 51, a waveguide 52, a wall base film 53, a planarization film 54, a CF (Color Filter) 55, a first semiconductor region 56, and a second semiconductor region 57. Furthermore, for pixel 13s, which is a phase difference pixel shown in the left part of Figure 3 and the lower left part of Figure 4, a light-shielding film 58 is formed thereon.

[0044] The first semiconductor region 56 and the second semiconductor region 57 are, for example, composed of a p-type (first conductivity type) and an n-type (second conductivity type). By forming the second semiconductor region 57 in units of pixels 13, a photoelectric conversion unit 21 is formed and functions as a photodiode PD.

[0045] The lens 51 is a so-called OCL (On Chip Lens), which condenses incident light from above in the figure and focuses it on the light receiving surface of the second semiconductor region 57 (photoelectric conversion unit 21).

[0046] The CF 55 transmits only light in a predetermined wavelength band among the light transmitted through the lens 51. The CF 55 transmits light in a predetermined wavelength band such as RGB, for example.

[0047] A planarization film 54 is formed at the boundary between the CF 55 and the second semiconductor region 57. As shown in FIG. 4, a waveguide 52 is formed so as to surround the periphery in units of pixels 13, 13s on the square on the planarization film 54. Further, as shown in FIG. 3, the waveguide 52 is formed on the wall base film 53.

[0048] With such a configuration, in the pixel 13, which is one of the three normal pixels other than the pixel 13 on the right side in the figure in FIG. 3 and the pixel 13s in the lower left part in FIG. 4, when incident light enters from the upper surface in FIG. 3 (when incident in the paper surface direction in FIG. 4), it is condensed by the lens 51, light in a predetermined wavelength band is transmitted through the CF 55, the incident light enters the second semiconductor region 57 that functions as the photoelectric conversion unit 21, and a pixel signal corresponding to the light amount is detected.

[0049] On the other hand, in the phase difference pixels, which are the pixel 13s on the left side in the figure in FIG. 3 and the pixel 13s in the lower left part in the figure in FIG. 4, a light shielding film 58 is formed on the planarization film 54 so as to cover approximately the right half region in the plan view in the figure in the square opening region where the incident light constituting the pixel 13 can enter. The wall base film 53 and the light shielding film 58 are composed of an inorganic material that can be a light absorber such as tungsten W, titanium Ti, or titanium nitride TiN, for example.

[0050] With this configuration, in pixel 13s, which functions as a phase difference pixel, half of the incident light is blocked, and a phase difference signal corresponding to the amount of incident light is detected.

[0051] Furthermore, as shown in Figure 3, the boundary portion 53a of the wall base film 53 with the light-shielding film 58 is formed in a state where it overlaps the edge of the light-shielding film 58. In addition, the edge of the light-shielding film 58 that forms the boundary with the waveguide 52 is configured to tuck under the waveguide 52 with the boundary portion 53a of the wall base film 53 overlapping the edge of the light-shielding film 58.

[0052] Thus, the boundary between the light-shielding film 58 and the wall base film 53 is structured to prevent the transmission of incident light. This prevents incident light from leaking from the boundary between the light-shielding film 58 and the wall base film 53 and entering the second semiconductor region 57 that forms the photoelectric conversion unit 21, thereby preventing the detection of an invalid phase difference signal.

[0053] Furthermore, the waveguide 52 is composed of a reflective wall made of a low refractive index material, such as fine particles of silicon dioxide (SiO2). As a result, the waveguide 52 can appropriately transmit incident light to the second semiconductor region 57 within CF 55 and suppress the intrusion of adjacent oblique light. This allows for improved sensitivity and suppression of color mixing due to oblique light, while appropriately acquiring phase difference information. Moreover, it is possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixel.

[0054] In the pixel structure 31, the light-shielding film 58 is set to be slightly larger than half the size of the rectangular light-receiving surface of the pixel 13s. This is because, even if half is covered, in reality, incident light can penetrate from more than half of the area due to oblique light, etc.

[0055] <<1-1. First Modification of the First Embodiment>> In the above, an example has been described in which the size of the phase difference pixels is the same as that of the normal pixels. However, in order to improve the sensitivity of the phase difference signal, the size of the phase difference pixels may be larger than that of the normal pixels. For example, it may be the same size as two normal pixels 13 placed side by side in the horizontal direction.

[0056] Furthermore, in the following, configurations with the same function as those in Figures 3 and 4 will be given the same name and the same reference numerals. For configurations that are the same but require distinction, additional reference numerals such as "'" or A, B, C, ... will be added to distinguish them from the numerals used in Figures 3 and 4.

[0057] Figure 5 shows the pixel structure 31' when the size of the phase difference pixels is set to the same size as two normal pixels 13 placed side by side in the horizontal direction.

[0058] In other words, in the phase difference pixel 13ss of Figure 5, a waveguide 52 is not formed in the space where two normal pixels 13 are arranged horizontally.

[0059] Furthermore, instead of the lenses 51 that were provided for each of the two horizontally arranged normal pixels 13, an elliptical lens 51' is formed.

[0060] Furthermore, a light-shielding film 58' is formed so as to cover approximately half (the right half in the figure) of the phase difference pixel 13ss.

[0061] In the pixel structure 31' of Figure 5, although not shown, similar to Figure 3, the boundary portion 53a of the wall base film 53 with the light-shielding film 58' is formed in a state where it overlaps the edge of the light-shielding film 58'. Furthermore, the edge of the light-shielding film 58' that forms the boundary with the waveguide 52 is configured so that the boundary portion 53a overlaps and tucks under the waveguide 52.

[0062] With this configuration, the boundary between the light-shielding film 58' and the wall base film 53 is configured not to transmit incident light. This prevents incident light from leaking from the boundary between the light-shielding film 58' and the wall base film 53 and entering the second semiconductor region 57 that forms the photoelectric conversion unit 21, thereby preventing the detection of an invalid phase difference signal.

[0063] Similarly, since the waveguide 52 is composed of reflective walls made of a low refractive index material, such as silicon dioxide (SiO2) fine particles, it is possible to appropriately acquire phase difference information while improving sensitivity and suppressing color mixing due to oblique light, and furthermore, it is possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixel.

[0064] <<1-2. Second Modification of the First Embodiment>> In the above, we have described an example in which the size of the phase difference pixel is equivalent to the size of two normal pixels 13 arranged horizontally. However, for the phase difference pixel, a configuration in which second semiconductor regions 57 (photoelectric conversion section 21) are formed separately on the left and right for phase difference detection is also possible.

[0065] Figures 6 and 7 illustrate the pixel structure 31A when second semiconductor regions 57L and 57R (each a photoelectric conversion unit 21) are formed separately on the left and right sides for phase difference detection in a phase difference pixel.

[0066] In other words, in the phase difference pixel 13As shown in Figure 6, second semiconductor regions 57L and 57R are individually formed in the area where the second semiconductor region 57 of the normal pixel 13A is formed, and two photoelectric conversion units 21 for detecting the phase difference signal are formed.

[0067] In the phase difference pixels 13As shown in Figures 6 and 7, a light-shielding film 58A is formed to cover approximately half (the right half in the figures).

[0068] In the pixel structure 31A of Figures 6 and 7, the boundary portion 53a of the wall base film 53 with the light-shielding film 58 is formed in a state where it is riding on the edge of the light-shielding film 58. Furthermore, the edge of the light-shielding film 58 that forms the boundary with the waveguide 52 is configured so that the boundary portion 53a is riding on top of the waveguide 52 and tucks under the waveguide 52.

[0069] With this configuration, the boundary between the light-shielding film 58 and the wall base film 53 is configured not to transmit incident light. Therefore, it is prevented that incident light leaks from the boundary between the light-shielding film 58 and the wall base film 53 and enters the second semiconductor region 57 that forms the photoelectric conversion unit 21, thereby preventing the detection of an invalid phase difference signal.

[0070] Similarly, since the waveguide 52 is composed of reflective walls made of a low refractive index material, such as silicon dioxide (SiO2) fine particles, it is possible to appropriately acquire phase difference information while improving sensitivity and suppressing color mixing due to oblique light, and furthermore, it is possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixel.

[0071] In the pixel structure 31A, the light-shielding film 58 is slightly smaller than the light-shielding film 58 in the pixel structure 31 described with reference to Figures 3 and 4, and is approximately half the size of the rectangular light-receiving surface of the pixel 13As. This is because the second semiconductor regions 57L and 57R are formed, and the photoelectric conversion units 21 for detecting the phase difference signal are formed separately on the left and right sides. In other words, it is possible to use the respective pixel signals of the second semiconductor regions 57L and 57R, depending on the presence or absence of the light-shielding film 58, as separate phase difference signals.

[0072] <<1-3. Third Modification of the First Embodiment>> In the above, we have described a configuration in which the phase difference pixels have second semiconductor regions 57 (photoelectric conversion section 21) formed separately on the left and right for phase difference detection. However, a pixel structure in which pupil correction is performed by shifting the position of the lens 51 to the central position and shifting the planarization film 54, the first semiconductor region 56 and the second semiconductor region 57 away from the central position is also acceptable.

[0073] Now, let's explain pupil correction. Pixels closer to the edge of the pixel region 3 need to receive oblique light with a large angle of incidence. Therefore, pupil correction is a correction method that makes it easier to receive oblique light by shifting the lens 51 to the center of the pixel region 3, using the positions of the waveguide 52, wall base film 53, CF 55, and light-shielding film 58 as references, while simultaneously shifting the planarization film 54, the first semiconductor region 56, and the second semiconductor region 57 away from the center of the pixel region 3.

[0074] Figure 8 is a side cross-sectional view of the pixel structure 31B with pupil correction applied. In Figure 8, the rightward direction in the figure is the direction of the center of the pixel region 3.

[0075] In Figure 8, the same reference numerals are used because the positions of the waveguide 52, wall base film 53, CF 55, and light-shielding film 58 in the pixel structure 31 of Figures 3 and 4 are used as a reference. Furthermore, the lens 51B is positioned so as to be closer to the center of the pixel region 3 with respect to the positions of the waveguide 52, wall base film 53, CF 55, and light-shielding film 58. In addition, the planarization film 54B, the first semiconductor region 56B, and the second semiconductor region 57B are positioned so as to be further away from the center of the pixel region 3 with respect to the positions of the waveguide 52, wall base film 53, CF 55, and light-shielding film 58.

[0076] The amount of shift of the lens 51B toward the center position of the pixel region 3, relative to the waveguide 52, the wall base film 53, CF 55, and the light-shielding film 58, and the amount of shift of the planarization film 54B, the first semiconductor region 56B, and the second semiconductor region 57B toward the center position of the pixel region 3 are mutually corresponding amounts of shift, and are values ​​corresponding to the distance from the center position of the pixel region 3.

[0077] In the pixel structure 31B of Figure 8, the boundary portion 53a of the wall base film 53 with the light-shielding film 58 is formed in a state where it is overlapping the edge of the light-shielding film 58. Furthermore, the edge of the light-shielding film 58 that forms the boundary with the waveguide 52 is configured so that the boundary portion 53a overlaps and tucks under the waveguide 52.

[0078] With this configuration, the boundary between the light-shielding film 58 and the wall base film 53 is configured not to transmit incident light. Therefore, it is prevented that incident light leaks from the boundary between the light-shielding film 58 and the wall base film 53 and enters the second semiconductor region 57B that forms the photoelectric conversion section 21 in the phase difference pixel 13Bs, thereby preventing the detection of an invalid phase difference signal.

[0079] Similarly, since the waveguide 52 is composed of reflective walls made of a low refractive index material, such as silicon dioxide (SiO2) fine particles, it is possible to appropriately acquire phase difference information while improving sensitivity and suppressing oblique color mixing, and furthermore, it is possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixel.

[0080] <<1-4. Fourth Modification of the First Embodiment>> In the above, we have described a pixel structure in which pupil correction is performed. Furthermore, pupil correction may be performed by forming a light-transmitting material with a predetermined refractive index, such as glass, directly beneath the lens 51.

[0081] Figure 9 is a side cross-sectional view of a pixel structure 31C in which a light-transmitting material with a predetermined refractive index is formed directly beneath the lens 51 to perform pupil correction.

[0082] In Figure 9, the lens 51C is formed shifted toward the center of the pixel region 3 with respect to its position relative to the waveguide 52, wall base film 53, CF 55, and light-shielding film 58. Furthermore, a light-transmitting material 61 with a predetermined refractive index is formed directly beneath the lens 51C. The planarization film 54C, the first semiconductor region 56C, and the second semiconductor region 57C are formed shifted away from the center of the pixel region 3 with respect to its position relative to the waveguide 52, wall base film 53, CF 55, and light-shielding film 58.

[0083] In the pixel structure 31C of Figure 9, the boundary portion 53a of the wall base film 53 with the light-shielding film 58 is formed in a state where it is overlapping the edge of the light-shielding film 58. Furthermore, the edge of the light-shielding film 58 that forms the boundary with the waveguide 52 is configured so that the boundary portion 53a overlaps and tucks under the waveguide 52.

[0084] As a result, even in the pixel structure 31C of Figure 9, it is possible to prevent the detection of invalid phase difference signals in the phase difference pixels 13Cs. Furthermore, the low refractive index waveguide 52 allows for the acquisition of phase difference information appropriately while improving sensitivity and suppressing oblique color mixing, and it is also possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixels.

[0085] <<2. Second Embodiment>> In the above, we have described an example in which the boundary portion 53a of the wall base film 53 with the light-shielding film 58 is formed in a state where it is riding on the edge of the light-shielding film 58, and furthermore, the edge of the light-shielding film 58A that forms the boundary with the waveguide 52 is configured to tuck under the waveguide 52.

[0086] However, it is sufficient to prevent incident light from leaking from the boundary between the light-shielding film 58 and the wall base film 53 and entering the second semiconductor region 57 that forms the photoelectric conversion unit 21, thereby suppressing the detection of an incorrect phase difference signal. Therefore, the light-shielding film 58 and the wall base film 53 may be arranged in a structure where they are adjacent to each other in contact.

[0087] Figure 10 is a side cross-sectional view of the pixel structure 31D, which is a structure in which the light-shielding film 58 and the wall base film 53 are adjacent in contact with each other, and is a cross-sectional view of the A and B sections in Figure 11. Figure 11 is a top view of the pixel structure 31D as seen from the direction of incidence of incident light, when a total of four pixels 13D, 13Ds are arranged in a 2x2 arrangement in the horizontal x vertical direction, with one pixel 13Ds consisting of a phase difference pixel located in the lower left of the figure, and the other three being normal pixels 13D.

[0088] In the pixel structure 31D shown in Figures 10 and 11, as indicated by the dotted circle in Figure 10, the light-shielding film 58D and the wall base film 53 are adjacent to each other in a touching state, so that the transmission of incident light from the boundary between the light-shielding film 58D and the wall base film 53 is suppressed. As a result, leakage of incident light from the boundary between the light-shielding film 58D and the wall base film 53 into the second semiconductor region 57 that forms the photoelectric conversion section 21 in the phase difference pixel 13Ds is suppressed, making it possible to suppress the detection of an invalid phase difference signal.

[0089] Furthermore, the low refractive index waveguide 52 allows for improved sensitivity and suppression of oblique color mixing while appropriately acquiring phase difference information. In addition, it makes it possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixel.

[0090] <<2-1. First Modification of the Second Embodiment>> In the above, we have described an example in which the size of the phase difference pixels is the same as that of the normal pixels. However, in order to improve the sensitivity of the phase difference signal, the size of the phase difference pixels may be, for example, the same as the size of two normal pixels 13 placed side by side in the horizontal direction.

[0091] Figure 12 is a top view of the pixel structure 31D' when the size of the phase difference pixels is set to the same size as two normal pixels 13 placed side by side horizontally.

[0092] In other words, in the phase difference pixel 13Dss' of Figure 12, a waveguide 52 is not formed in the space where two normal pixels 13D are arranged horizontally.

[0093] Furthermore, instead of the lens 51 provided in each of the two horizontally arranged normal pixels 13D, an elliptical lens 51' is formed.

[0094] Furthermore, a light-shielding film 58D' is formed to cover approximately half (the right half in the figure) of the phase difference pixel 13Dss'.

[0095] In the pixel structure 31D' of Figure 12, although not shown, the boundary between the wall base film 53 and the light-shielding film 58' is formed in a state of being adjacent and in contact, similar to Figure 10.

[0096] This configuration prevents incident light from leaking from the boundary between the light-shielding film 58D' and the wall base film 53 and entering the second semiconductor region 57 that forms the photoelectric conversion unit 21, thereby suppressing the detection of an invalid phase difference signal.

[0097] Similarly, the low refractive index waveguide 52 allows for improved sensitivity and suppression of oblique color mixing while appropriately acquiring phase difference information, and furthermore, it makes it possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixel.

[0098] <<2-2. Second Modification of the Second Embodiment>> In the above, we have described an example in which the size of the phase difference pixel is equivalent to the size of two normal pixels 13 arranged horizontally. However, for the phase difference pixel, a configuration in which second semiconductor regions 57 (photoelectric conversion section 21) are formed separately on the left and right for phase difference detection is also possible.

[0099] Figures 13 and 14 show a side cross-sectional view and a top view of the pixel structure 31E when the phase difference pixels are configured such that second semiconductor regions 57L and 57R (each a photoelectric conversion unit 21) are formed separately on the left and right sides for phase difference detection.

[0100] In other words, in the phase difference pixel 13Es of Figure 13, second semiconductor regions 57L and 57R are formed separately within the range in which the second semiconductor region 57 of the normal pixel 13E is formed, and photoelectric conversion units 21 for detecting the phase difference signal are formed separately on the left and right sides.

[0101] In the phase difference pixels 13Es shown in Figures 13 and 14, a light-shielding film 58E is formed to cover approximately half (the right half in the figures).

[0102] In the pixel structures 31E shown in Figures 13 and 14, the boundary between the wall base film 53 and the light-shielding film 58E is formed in a state of being adjacent and in contact with each other.

[0103] This configuration prevents incident light from leaking from the boundary between the light-shielding film 58E and the wall base film 53 and entering the second semiconductor region 57 that forms the photoelectric conversion unit 21, thereby suppressing the detection of an invalid phase difference signal.

[0104] Similarly, the low refractive index waveguide 52 allows for improved sensitivity and suppression of oblique color mixing while appropriately acquiring phase difference information, and furthermore, it makes it possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixel.

[0105] <<2-3. Third Modification of the Second Embodiment>> In the above, we have described a configuration in which a second semiconductor region 57 (photoelectric conversion unit 21) is formed separately for the left and right for phase difference detection in the phase difference pixels, but a pixel structure with pupil correction is also acceptable.

[0106] Figure 15 is a side cross-sectional view of the pixel structure 31F with pupil correction applied. In Figure 15, the rightward direction in the figure is the direction of the center of the pixel region 3.

[0107] In Figure 15, the same reference numerals are used because the positions of the waveguide 52, wall base film 53, CF 55, and light-shielding film 58 in the pixel structure 31D of Figures 10 and 11 are used as a reference. Furthermore, the lens 51F is formed shifted to the right toward the center of the pixel region 3 with respect to the positions of the waveguide 52, wall base film 53, CF 55, and light-shielding film 58. In addition, the planarization film 54F, the first semiconductor region 56F, and the second semiconductor region 57F are formed shifted to the left toward the center of the pixel region 3 with respect to the positions of the waveguide 52, wall base film 53, CF 55, and light-shielding film 58.

[0108] In the pixel structure 31F of Figure 15, the boundary between the wall base film 53 and the light-shielding film 58F is formed in a state of being adjacent and in contact with each other.

[0109] This configuration prevents incident light from leaking from the boundary between the light-shielding film 58F and the wall base film 53 and entering the second semiconductor region 57F that forms the photoelectric conversion section 21 in the phase difference pixel 13Fs, thereby suppressing the detection of an invalid phase difference signal.

[0110] Similarly, the low refractive index waveguide 52 allows for improved sensitivity and suppression of oblique color mixing while appropriately acquiring phase difference information, and furthermore, it makes it possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixel.

[0111] <<2-4. Fourth Modification of the Second Embodiment>> In the above, we have described a pixel structure in which pupil correction is performed. Furthermore, pupil correction may be performed by forming a light-transmitting material with a predetermined refractive index, such as glass, directly beneath the lens 51.

[0112] Figure 16 is a side cross-sectional view of a pixel structure 31G in which a light-transmitting material with a predetermined refractive index is formed directly beneath the lens 51G to perform pupil correction.

[0113] In Figure 16, the lens 51G is formed shifted to the right toward the center of the pixel region 3 with respect to its position relative to the waveguide 52, wall base film 53, CF 55, and light-shielding film 58. Furthermore, a light-transmitting material 61G with a predetermined refractive index is formed directly beneath the lens 51G. The planarization film 54G, the first semiconductor region 56G, and the second semiconductor region 57G are formed shifted away from the center of the pixel region 3 with respect to its position relative to the waveguide 52, wall base film 53, CF 55, and light-shielding film 58.

[0114] In the pixel structure 31G of Figure 16, the boundary between the wall base film 53 and the light-shielding film 58G is formed in a touching and adjacent state. This makes it possible to suppress the detection of invalid phase difference signals in the phase difference pixels 13Gs. Furthermore, the low refractive index waveguide 52 allows for the acquisition of phase difference information appropriately while improving sensitivity and suppressing oblique color mixing, and also makes it possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixels.

[0115] <<3. Third Embodiment>> In the above, an example has been described in which the light-shielding film 58 is formed from a single material, but it may also be constructed by laminating multiple materials.

[0116] Figure 17 is a side cross-sectional view of a pixel structure 31H in which the light-shielding film 58 is constructed by laminating multiple materials. Note that the side cross-sectional view in Figure 17 corresponds, for example, to the side cross-sectional view of the A and B sections of the pixel structure 31 in Figure 4.

[0117] In the pixel structure 31H shown in Figure 17, the light-shielding film 58H is configured by stacking two materials 58Ha and 58Hb. The materials 58Ha and 58Hb may be composed of any two of the following: tungsten W, titanium Ti, and titanium nitride TiN. In Figure 17, the light-shielding film 58H is shown as a two-layer structure consisting of two materials 58Ha and 58Hb, but it may also consist of three or more layers.

[0118] In the pixel structure 31H of Figure 17, it is possible to prevent the detection of invalid phase difference signals in the phase difference pixels 13Hs. Furthermore, the low refractive index waveguide 52 allows for the acquisition of phase difference information appropriately while improving sensitivity and suppressing oblique color mixing, and it is also possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixels.

[0119] <<4. Fourth Embodiment>> In the above, an example has been described in which the wall base film 53 is formed from a single material, but it may also be constructed by laminating multiple materials.

[0120] Figure 18 is a side cross-sectional view of a pixel structure 31I in which the wall base film 53 is constructed by laminating multiple materials. Note that the side cross-sectional view in Figure 18 corresponds, for example, to the side cross-sectional view consisting of section A and B in the pixel structure 31 of Figure 4.

[0121] In the pixel structure 31I shown in Figure 18, the wall base film 53I is constructed by laminating two materials 53Ia and 53Ib. The materials 53Ia and 53Ib may be composed of any two of the following: tungsten W, titanium Ti, and titanium nitride TiN. In Figure 18, the wall base film 53I is shown as a two-layer structure consisting of two materials 53Ia and 53Ib, but it may also consist of three or more layers.

[0122] With this configuration, even in the pixel structure 31I of Figure 18, it is possible to prevent the detection of invalid phase difference signals in the phase difference pixels 13Is. Furthermore, the low refractive index waveguide 52 allows for the acquisition of phase difference information appropriately while improving sensitivity and suppressing oblique color mixing, and it is also possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixels.

[0123] <<5. Fifth Embodiment>> In the above, we have described an example in which a wall base film 53 is formed on the planarization film 54, and further, a waveguide 52 is formed on the wall base film 53 (in the direction of the light source of the incident light). However, the waveguide 52 may be formed directly on the planarization film 54.

[0124] Figure 19 is a side cross-sectional view of a pixel structure 31J in which a waveguide 52 is directly formed on a planarized film 54. The side cross-sectional view in Figure 19 corresponds, for example, to the side cross-sectional view consisting of section A and B in the pixel structure 31 of Figure 4.

[0125] In the pixel structure 31J of Figure 19, there is no structure corresponding to the wall base film 53, and the waveguide 52 is directly formed on the planarization film 54. Furthermore, the end 58Ja of the light-shielding film 58J on the waveguide 52 side is formed to be submerged beneath the waveguide 52. In other words, the boundary between the light-shielding film 58J and the waveguide 52 is configured not to transmit incident light.

[0126] With this configuration, even in the pixel structure 31J of Figure 19, it is possible to prevent the detection of invalid phase difference signals in the phase difference pixels 13Js. Furthermore, the low refractive index waveguide 52J allows for the proper acquisition of phase difference information while improving sensitivity and suppressing oblique color mixing, and it is also possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixels.

[0127] <<6. Sixth Embodiment>> In the above, we have described an example in which only the waveguide 52 is formed, but a protective film may be formed on the surface of the waveguide 52.

[0128] Figure 20 is a side cross-sectional view of a pixel structure 31K in which a protective film is formed on the surface of the waveguide 52. Note that the side cross-sectional view in Figure 20 corresponds, for example, to the side cross-sectional view consisting of section A and B in the pixel structure 31 of Figure 4.

[0129] In the pixel structure 31K of Figure 20, a waveguide 52K is provided in place of waveguide 52. Waveguide 52K has a protective film 52Ka made of silicon dioxide (SiO2) or the like formed on the surface of waveguide 52. Furthermore, the inside of the protective film 52Ka of waveguide 52K is composed of fine particles of silicon dioxide (SiO2) or the like and air pores. As a result, waveguide 52K functions as a low refractive index reflective wall.

[0130] With this configuration, even in the pixel structure 31K of Figure 20, it is possible to prevent the detection of invalid phase difference signals in the phase difference pixel 13Ks. Furthermore, the low refractive index waveguide 52K allows for the proper acquisition of phase difference information while improving sensitivity and suppressing oblique color mixing, and it is also possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixel.

[0131] <<7. Seventh Embodiment>> In the above, an example has been described in which a protective film 52Ka is formed on the surface of the waveguide 52, but a configuration in which the wall base film 53 is not formed is also possible.

[0132] Figure 21 is a side cross-sectional view of a pixel structure 31L in which a protective film is formed on the surface of the waveguide 52, but no wall base film 53 is formed. Note that the side cross-sectional view in Figure 21 corresponds, for example, to the side cross-sectional view consisting of section A and B in the pixel structure 31 of Figure 4.

[0133] In the pixel structure 31L of Figure 21, a waveguide 52L is provided instead of waveguide 52. Waveguide 52L has a configuration similar to waveguide 52K (Figure 20), in which a protective film 52La made of silicon dioxide (SiO2) or the like is provided on waveguide 52. Furthermore, the inside of the protective film 52La of waveguide 52L is composed of fine particles of silicon dioxide (SiO2) or the like and air pores. As a result, waveguide 52L functions as a low refractive index reflective wall.

[0134] The pixel structure 31L in Figure 21, like the pixel structure 31J in Figure 19, lacks a configuration corresponding to the wall base film 53, and the waveguide 52L is directly formed on the planarization film 54. Furthermore, the end 58La of the light-shielding film 58L on the waveguide 52L side is formed to tuck beneath the waveguide 52L. Therefore, the boundary between the light-shielding film 58L and the waveguide 52L is configured to prevent the transmission of incident light.

[0135] With this configuration, even in the pixel structure 31L of Figure 21, it is possible to prevent the detection of invalid phase difference signals in the phase difference pixels 13Ls. Furthermore, the low refractive index waveguide 52L allows for the acquisition of phase difference information appropriately while improving sensitivity and suppressing oblique color mixing, and it is also possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixels.

[0136] <<8. Eighth Embodiment>> In the above, examples have been described in which the boundary between the wall base film 53 and the light-shielding film 58 is formed with the wall base film 53 overlapping the edge of the light-shielding film 58, or in which they are joined together without any gaps.

[0137] However, the light-shielding film 58 and the wall base film 53 may be arranged so that they do not overlap and are separated by a predetermined distance.

[0138] Figure 22 is a side cross-sectional view of the A and B sections in Figure 23 of a pixel structure 31M in which the light-shielding film 58 and the wall base film 53 do not overlap and are separated by a predetermined distance. Figure 23 is a top view of the pixel structure 31M from the direction of incident light when a total of four pixels 13M, 13Ms are arranged in a 2x2 configuration in the horizontal x vertical direction, with one pixel 13Ms consisting of a phase difference pixel located in the lower left of the figure, and the other three being normal pixels.

[0139] As shown by the dotted circle in Figure 22, the light-shielding film 58M and the wall base film 53 do not overlap and are separated by a predetermined distance. The predetermined distance between the light-shielding film 58M and the wall base film 53 is an extremely small distance. Furthermore, the wall base film 53 is not configured to overlap the edge of the light-shielding film 58M, nor is the light-shielding film 58M routed under the waveguide 52. For this reason, although there is a possibility that incident light may penetrate the phase difference pixel 13Ms at the boundary between the wall base film 53 and the edge of the light-shielding film 58M, the distance between the wall base film 53 and the edge of the light-shielding film 58M is extremely small, and the amount of transmitted incident light can also be kept to an extremely small amount.

[0140] In the pixel structure 31M shown in Figures 22 and 23, the detection of invalid phase difference signals in the phase difference pixel 13Ms can be reduced. Furthermore, the low refractive index waveguide 52 allows for the acquisition of phase difference information appropriately while improving sensitivity and suppressing oblique color mixing, and also makes it possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixel.

[0141] <<8-1. First Modification of the Eighth Embodiment>> In the above, we have described an example in which the size of the phase difference pixels is the same as the size of the normal pixels. However, in order to improve the sensitivity of the phase difference signal, the size of the phase difference pixels may be, for example, the same as the size of two normal pixels 13 placed side by side in the horizontal direction.

[0142] Figure 24 shows the pixel structure 31M' when the size of the phase difference pixels is set to the same size as two normal pixels 13 placed side by side in the horizontal direction.

[0143] In other words, in the phase difference pixel 13Mss' shown in Figure 24, a waveguide 52 is not formed in the space where two normal pixels 13M are arranged horizontally.

[0144] Furthermore, instead of the lenses 51 that were provided for each of the two horizontally arranged normal pixels 13M, an elliptical lens 51' is formed.

[0145] Furthermore, a light-shielding film 58M' is formed to cover approximately half of the phase difference pixel 13Mss (the right half in the figure).

[0146] In the pixel structure 31M' of Figure 24, although not shown, similar to Figure 22, the boundary between the wall base film 53 and the light-shielding film 58' is formed without overlapping, but separated by a very small predetermined distance.

[0147] This configuration reduces the amount of incident light leaking from the boundary between the light-shielding film 58M' and the wall base film 53, thereby reducing its penetration into the second semiconductor region 57 that forms the photoelectric conversion unit 21, and thus reducing the detection of abnormal phase difference signals.

[0148] Similarly, by using a waveguide 52 made of a low refractive index material, it is possible to appropriately acquire phase difference information while improving sensitivity and suppressing oblique color mixing, and furthermore, it is possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixel.

[0149] <<8-2. Second Modification of the Eighth Embodiment>> In the above, we have described an example in which the size of the phase difference pixel is equivalent to the size of two normal pixels 13 arranged horizontally. However, for the phase difference pixel, a configuration in which second semiconductor regions 57 (photoelectric conversion section 21) are formed separately on the left and right for phase difference detection is also possible.

[0150] Figures 25 and 26 show the pixel structure 31N when the phase difference pixels are configured such that second semiconductor regions 57L and 57R (each a photoelectric conversion unit 21) are formed separately on the left and right sides for phase difference detection.

[0151] In other words, in the phase difference pixel 13Ns of Figure 25, second semiconductor regions 57L and 57R are formed separately within the range in which the second semiconductor region 57 of the normal pixel 13N is formed, and photoelectric conversion units 21 for detecting the phase difference signal are formed separately on the left and right sides.

[0152] In the phase difference pixels 13Ns shown in Figures 25 and 26, a light-shielding film 58N is formed to cover approximately half (the right half in the figures).

[0153] In the pixel structure 31N shown in Figures 25 and 26, the boundary between the wall base film 53 and the light-shielding film 58E is formed without overlapping, separated by a predetermined distance.

[0154] This configuration reduces the intrusion of incident light from the boundary between the light-shielding film 58E and the wall base film 53 into the second semiconductor region 57 that forms the photoelectric conversion unit 21, thereby reducing the detection of incorrect phase difference signals.

[0155] Similarly, the low refractive index waveguide 52 allows for improved sensitivity and suppression of color mixing due to oblique light, while also enabling the appropriate acquisition of phase difference information. Furthermore, it makes it possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixel.

[0156] <<8-3. Third Modification of the Eighth Embodiment>> In the above, we have described a configuration in which a second semiconductor region 57 (photoelectric conversion unit 21) is formed separately for the left and right for phase difference detection in the phase difference pixels, but a pixel structure with pupil correction is also acceptable.

[0157] Figure 27 is a side cross-sectional view of the pixel structure 31O with pupil correction applied. In Figure 27, the rightward direction in the figure is the direction of the center of the pixel region 3.

[0158] In Figure 27, the same reference numerals are used because the positions of the waveguide 52, wall base film 53, CF 55, and light-shielding film 58 in the pixel structure 31D of Figures 10 and 11 are used as a reference. Furthermore, the lens 51O is formed shifted to the right toward the center of the pixel region 3 with respect to the positions of the waveguide 52, wall base film 53, CF 55, and light-shielding film 58. In addition, the planarization film 54O, the first semiconductor region 56O, and the second semiconductor region 57O are formed shifted to the left toward the center of the pixel region 3 with respect to the positions of the waveguide 52, wall base film 53, CF 55, and light-shielding film 58.

[0159] In the pixel structure 31O of Figure 27, the boundary between the wall base film 53 and the light-shielding film 58O is formed without overlapping, separated by a predetermined distance.

[0160] With this configuration, incident light leaking from the boundary between the light-shielding film 58F and the wall base film 53 is reduced, and the intrusion of light into the second semiconductor region 57O that forms the photoelectric conversion section 21 in the phase difference pixel 13Os is reduced, thereby reducing the detection of invalid phase difference signals.

[0161] Similarly, the low refractive index waveguide 52 allows for improved sensitivity and suppression of oblique color mixing while appropriately acquiring phase difference information, and furthermore, it makes it possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixel.

[0162] <<8-4. Fourth Modification of the Eighth Embodiment>> In the above, we have described a pixel structure in which pupil correction is performed. Furthermore, pupil correction may be performed by forming a light-transmitting material with a predetermined refractive index, such as glass, directly beneath the lens 51.

[0163] Figure 28 is a side cross-sectional view of a pixel structure 31P in which a light-transmitting material with a predetermined refractive index is formed directly beneath the lens 51 to perform pupil correction.

[0164] In Figure 28, the lens 51P is formed shifted to the right toward the center of the pixel region 3 with respect to its position relative to the waveguide 52, wall base film 53, CF 55, and light-shielding film 58. Furthermore, a medium 61P with the same refractive index as the lens 51 is formed directly beneath the lens 51P, increasing the optical shift amount (distance) from the lens 51 to the CF 52. The planarization film 54P, the first semiconductor region 56P, and the second semiconductor region 57P are formed shifted away from the center of the pixel region 3 with respect to its position relative to the waveguide 52, wall base film 53, CF 55, and light-shielding film 58.

[0165] In the pixel structure 31P of Figure 28, the boundary between the wall base film 53 and the light-shielding film 58P is formed without overlapping, separated by a predetermined distance.

[0166] In the pixel structure 31P of Figure 28, the boundary between the wall base film 53 and the light-shielding film 58P is formed with a predetermined distance between them, but without overlapping. This makes it possible to reduce the detection of invalid phase difference signals in the phase difference pixels 13Ps. Furthermore, the low refractive index waveguide 52 allows for the acquisition of phase difference information appropriately while improving sensitivity and suppressing oblique color mixing, and also makes it possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixel.

[0167] <<9. Ninth Embodiment>> In the above, we have described an example in which the thickness of the waveguide 52 is uniform. However, for waveguides 52 adjacent to the light-shielding film 58, the thickness may be increased so as to protrude towards the light-shielding film 58, and the light-shielding film 58 may be formed to tuck beneath the waveguide 52.

[0168] Figure 29 is a side cross-sectional view of the pixel structure 31Q, consisting of the A and B sections in Figure 30. The structure is such that the thickness of the waveguide 52 adjacent to the light-shielding film 58 is increased so that it protrudes towards the light-shielding film 58, and the light-shielding film 58 is formed so that it is positioned beneath the waveguide 52. Figure 30 is a top view of the pixel structure 31Q when viewed from the direction of incidence of incident light, in a case where pixels 13Q and 13Qs, consisting of a total of 4 pixels in a 2x2 arrangement in the horizontal x vertical direction, are arranged such that one pixel 13Qs consisting of a phase difference pixel is arranged in the lower left of the figure, and the remaining three are arranged as pixels 13Q consisting of normal pixels.

[0169] As shown in Figures 29 and 30, the thickness of the waveguide 52 that is not adjacent to the light-shielding film 58Q is D1, while the thickness of the waveguide 52Q adjacent to the light-shielding film 58Q is D2 (>D1). Furthermore, the thickness of waveguide 52Q is increased so as to protrude towards the light-shielding film 58Q side. Due to this configuration, as shown by the dotted circle in Figure 29, the boundary portion 53a of the wall base film 53 overlaps the end of the light-shielding film 58 on the wall base film 53 side. Also, the end of the light-shielding film 58 on the wall base film 53 side is formed to tuck under the waveguide 52Q with the boundary portion 53a of the wall base film 53 overlapping it.

[0170] This prevents incident light from leaking from the boundary between the light-shielding film 58Q, the wall base film 53, and the waveguide 52 and entering the second semiconductor region 57 that forms the photoelectric conversion unit 21, thereby preventing the detection of an invalid phase difference signal.

[0171] Similarly, since waveguides 52 and 52Q are composed of reflective walls made of a low refractive index material, such as silicon dioxide (SiO2), it is possible to appropriately acquire phase difference information while improving sensitivity and suppressing oblique color mixing, and furthermore, it is possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixel.

[0172] <<9-1. First Modification of the Ninth Embodiment>> In the above, we have described an example in which the size of the phase difference pixels is the same as that of the normal pixels. However, in order to improve the sensitivity of the phase difference signal, the size of the phase difference pixels may be larger than that of the normal pixels. For example, it may be the same size as two normal pixels 13 placed side by side in the horizontal direction.

[0173] Figure 31 is a top view of the pixel structure 31Q' when the size of the phase difference pixels is set to the same size as two normal pixels 13 placed side by side horizontally.

[0174] In other words, in the phase difference pixel 13Qss' of Figure 31, a waveguide 52 is not formed in the space where two normal pixels 13Q are arranged horizontally.

[0175] Furthermore, instead of the lenses 51 that were provided for each of the two horizontally arranged normal pixels 13Q, an elliptical lens 51' is formed.

[0176] Furthermore, a light-shielding film 58Q' is formed to cover approximately half (the right half in the figure) of the phase difference pixel 13Qss'.

[0177] In the pixel structure 31Q' of Figure 31, the thickness of the waveguide 52 that is not adjacent to the light-shielding film 58Q' is D1, while the thickness of the waveguide 52Q' adjacent to the light-shielding film 58Q' is D2 (>D1). Furthermore, the waveguide 52Q' has a thickness increased by D2 (>D1) compared to the waveguide 52, which has a thickness of D1, so that it protrudes towards the light-shielding film 58Q. With this configuration, similar to the pixel structure 31Q in Figures 29 and 30, the end of the light-shielding film 58Q' is formed to tuck under the waveguide 52Q' with the wall base film 53 riding on top of it.

[0178] This prevents incident light from leaking from the boundary between the light-shielding film 58Q', the wall base film 53, and the waveguide 52Q' and entering the second semiconductor region 57 that forms the photoelectric conversion unit 21, thereby preventing the detection of an invalid phase difference signal.

[0179] Similarly, since waveguides 52 and 52Q' are composed of reflective walls made of a low refractive index material, such as silicon dioxide (SiO2) fine particles, it is possible to appropriately acquire phase difference information while improving sensitivity and suppressing color mixing due to oblique light, and furthermore, it is possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixel.

[0180] <<10. Tenth Embodiment>> In the above, an example has been described in which the light-shielding film 58 is formed on the surface of the planarization film 54 (on the surface facing the direction of incidence of the incident light). However, the light-shielding film 58 may also be formed within the planarization film 54.

[0181] Figure 32 is a side cross-sectional view of a pixel structure 31R in which the light-shielding film 58R is formed within the planarization film 54. Note that Figure 32 is a side cross-sectional view corresponding to the side cross-sectional view of Figure 3, which is the AB section of Figure 4.

[0182] More specifically, in the pixel structure 31R of Figure 32, the light-shielding film 58R is formed within the planarization film 54, directly above the first semiconductor region 56 and the second semiconductor region 57 in the figure. Furthermore, the light-shielding film 58R covers approximately half of the phase difference pixels 13Rs and straddles the boundary between CF 55 and the wall base film 53 and waveguide 52, with its end positioned to tuck beneath the wall base film 53 and waveguide 52.

[0183] This configuration prevents incident light from leaking from the boundary between the light-shielding film 58R, the wall base film 53, and the waveguide 52 and entering the second semiconductor region 57 that forms the photoelectric conversion unit 21, thereby preventing the detection of an invalid phase difference signal.

[0184] Furthermore, the low refractive index waveguide 52 allows for improved sensitivity and suppression of color mixing due to oblique light, while enabling the appropriate acquisition of phase difference information.

[0185] <<10-1. First Modification of the Tenth Embodiment>> In the above, we have described a pixel structure in which the light-shielding film 58 is formed within the planarization film 54, but a pixel structure with pupil correction may also be used.

[0186] Figure 33 is a side cross-sectional view of the pixel structure 31S with pupil correction applied. In Figure 33, the rightward direction in the figure is the direction of the center of the pixel region 3.

[0187] In Figure 33, the same reference numerals are used because the positions of the waveguide 52, wall base film 53, and CF 55 in the pixel structure 31D of Figures 10 and 11 are used as a reference. Furthermore, the lens 51S is formed shifted to the right toward the center of the pixel region 3 with respect to the positions of the waveguide 52, wall base film 53, and CF 55. In addition, the planarization film 54S, the first semiconductor region 56S, the second semiconductor region 57S, and the light-shielding film 58S are formed shifted to the left toward the center of the pixel region 3 with respect to the positions of the waveguide 52, wall base film 53, and CF 55.

[0188] In the pixel structure 31S of Figure 33, the light-shielding film 58S is formed within the planarization film 54S, directly above the first semiconductor region 56S and the second semiconductor region 57S. Furthermore, the light-shielding film 58S covers approximately half of the phase difference pixels 13Ss and straddles the boundary between CF 55 and the wall base film 53 and waveguide 52, with its end positioned to tuck beneath the wall base film 53 and waveguide 52.

[0189] This configuration prevents incident light from leaking from the boundary between the light-shielding film 58S, the wall base film 53, and the waveguide 52 and entering the second semiconductor region 57S that forms the photoelectric conversion unit 21, thereby preventing the detection of an invalid phase difference signal.

[0190] Similarly, the low refractive index waveguide 52 allows for improved sensitivity and suppression of oblique color mixing while appropriately acquiring phase difference information.

[0191] <<10-2. Second Modification of the Tenth Embodiment>> In the above, a pixel structure with pupil correction has been described, but pupil correction may be further applied by forming a light-transmitting material with a predetermined refractive index, such as glass, directly beneath the lens 51.

[0192] Figure 34 is a side cross-sectional view of a pixel structure 31T in which a light-transmitting material with a predetermined refractive index is formed directly beneath the lens 51 to perform pupil correction.

[0193] In Figure 34, the lens 51T is formed shifted to the right toward the center of the pixel region 3 with respect to its position relative to the waveguide 52, the wall base film 53, and the CF 55. Furthermore, a light-transmitting material 61T with a predetermined refractive index is formed directly beneath the lens 51T. The planarization film 54T, the first semiconductor region 56T, the second semiconductor region 57T, and the light-shielding film 58T are formed shifted away from the center of the pixel region 3 with respect to its position relative to the waveguide 52, the wall base film 53, and the CF 55.

[0194] In the pixel structure 31T of Figure 34, the light-shielding film 58T is formed within the planarization film 54T, directly above the first semiconductor region 56T and the second semiconductor region 57T in the figure. Furthermore, the light-shielding film 58T covers approximately half of the phase difference pixels 13Ts and straddles the boundary between CF 55 and the wall base film 53 and waveguide 52, with its end positioned to tuck beneath the wall base film 53 and waveguide 52.

[0195] This configuration prevents incident light from leaking from the boundary between the light-shielding film 58T, the wall base film 53, and the waveguide 52 and entering the second semiconductor region 57T that forms the photoelectric conversion unit 21, thereby preventing the detection of an invalid phase difference signal.

[0196] Similarly, since the waveguide 52 is composed of reflective walls made of a low refractive index material, such as silicon dioxide (SiO2) fine particles, it is possible to appropriately acquire phase difference information while improving sensitivity and suppressing oblique color mixing.

[0197] <<11. Eleventh Embodiment>> In the above, an example has been described in which the light-shielding film 58 is formed within the planarization film 54. However, it is also possible to further form the light-shielding film 58 below the waveguide 52 and the wall base film 53, which form the boundary between pixels 13 within the planarization film 54, in order to reduce the effect of color mixing due to oblique light not only on the phase difference pixels 13s but also on the normal pixels 13.

[0198] Figure 35 is a side cross-sectional view of a pixel structure 31R' in which a light-shielding film 58R is formed within the planarization film 54, and further, a separate light-shielding film 58R' is formed below the waveguide 52 and the wall base film 53, which form the boundary between all pixels 13 within the planarization film 54. In Figure 35, components of the pixel structure 31R' that have basically the same function as those of the pixel structure 31R in Figure 32 are denoted by the same reference numerals, and their explanations are omitted.

[0199] In the pixel structure 31R' of Figure 35, the difference from the pixel structure 31R of Figure 32 is that a light-shielding film 58R' is provided below the waveguide 52 and the wall base film 53, which form the boundary between pixels 13 within the planarization film 54.

[0200] This configuration not only reduces the effect of color mixing due to oblique light in the phase-difference pixels 13Rs of the pixel structure 32R shown in Figure 32, but also further reduces the effect of color mixing due to oblique light in the normal pixels 13R.

[0201] <<11-1. First Modification of the Eleventh Embodiment>> In the above, we have described an example in which a light-shielding film 58R' is formed between all pixels, including not only the phase-difference pixels 13Rs but also the normal pixels 13R. However, it may also be applied to a pixel structure in which pupil correction is performed.

[0202] Figure 36 is a side cross-sectional view of a pixel structure 31S' in which pupil correction is performed, and a light-shielding film 58S is formed within the planarization film 54S, and further, a light-shielding film 58S' is formed separately below the waveguide 52 and the wall base film 53, which form the boundary between all pixels 13 within the planarization film 54S. Note that the pixel structure 31S' in Figure 36 basically uses the same reference numerals for components that have the same function as the pixel structure 31S in Figure 33, and their explanation is omitted.

[0203] In the pixel structure 31S' of Figure 36, the difference from the pixel structure 31S of Figure 33 is that a light-shielding film 58S' is provided below the waveguide 52 and the wall base film 53, which form the boundary between all pixels, including pixels 13S and 13Ss within the planarization film 54S.

[0204] This configuration not only reduces the effect of color mixing due to oblique light in the phase-difference pixels 13Ss of the pixel structure 31S shown in Figure 36, but also further reduces the effect of color mixing due to oblique light in the normal pixels 13S.

[0205] <<11-2. Second Modification of the Eleventh Embodiment>> In the above, we have described an example in which a light-shielding film 58S' is formed between all pixels in a pixel structure in which pupil correction is performed. Furthermore, pupil correction may be performed by forming a light-transmitting material with a predetermined refractive index, such as glass, directly beneath the lens 51.

[0206] Figure 37 is a side cross-sectional view of a pixel structure 31T' in which a light-transmitting material 61T with a predetermined refractive index is formed directly beneath the lens 51T to perform pupil correction, a light-shielding film 58T is formed within the planarization film 54T, and further, a separate light-shielding film 58T' is formed below the waveguide 52 and the wall base film 53, which form the boundary between all pixels 13 within the planarization film 54T. Note that the pixel structure 31T' in Figure 37 basically uses the same reference numerals for components that have the same function as the pixel structure 31T in Figure 34, and their explanation is omitted.

[0207] In the pixel structure 31T' of Figure 37, the difference from the pixel structure 31T of Figure 34 is that a light-shielding film 58T' is provided below the waveguide 52 and the wall base film 53, which form the boundary between all pixels, including pixels 13T and 13Ts, within the planarization film 54T.

[0208] This configuration not only reduces the effect of color mixing due to oblique light in the phase-difference pixels 13Ts of the pixel structure 31T shown in Figure 34, but also further reduces the effect of color mixing due to oblique light in the normal pixels 13T.

[0209] <<12. Twelfth Embodiment>> In the above, an example has been described in which the light-shielding film 58 is formed within the planarization film 54, but it may also be formed within the second semiconductor region 57 directly beneath the planarization film 54.

[0210] Figure 38 is a side cross-sectional view of a pixel structure 31U in which, in a phase difference pixel 13Us, the light-shielding film 58U is formed in a second semiconductor region 57 directly beneath the planarization film 54.

[0211] The light-shielding film 58U is formed directly beneath the planarization film 54 and within the first semiconductor region 56 and the second semiconductor region 57, thereby shielding approximately half of the aperture through which incident light to the phase difference pixel 13Us can enter, and thereby improving the sensitivity of the phase difference signal.

[0212] More specifically, in the case of the pixel structure 31 shown on the left side of Figure 39, the incident light Li is focused by the lens 51 and focuses at the focal point Pf on the upper surface of the second semiconductor region 57, which functions as a photodiode. However, in the pixel structure 31, because the light-shielding film 58 is formed on the planarization film 54, the incident light Li focused by the lens 51 is blocked by the light-shielding film 58 just before it reaches the focal point Pf, in the portion of the light indicated by the black triangle in the figure. For this reason, in the case of the pixel structure 31, the amount of light that focuses at the focal point Pf is reduced.

[0213] On the other hand, in the case of the pixel structure 31U shown in the right part of Figure 39, the light-shielding film 58U is formed in the first semiconductor region 56 and the second semiconductor region 57, which are directly beneath the planarization film 54, in the range from the inter-pixel boundary to just before the focal point Pf. As a result, the incident light Li focused by the lens 51 reaches the focal point Pf set on the second semiconductor region 57, which functions as a photodiode. This makes it possible to appropriately detect phase difference information.

[0214] This configuration not only reduces the effect of color mixing due to oblique light in the phase difference pixels 13Us of the pixel structure 32U in Figure 39, but also enables the acquisition of highly accurate phase difference information.

[0215] <<12-1. First Modification of the Twelfth Embodiment>> In the above, we have described a pixel structure 31U in which the light-shielding film 58U is formed in the first semiconductor region 56 and the second semiconductor region 57 directly beneath the planarization film 54. However, it may also be applied to a pixel structure in which pupil correction is performed.

[0216] Figure 40 is a side cross-sectional view of a pixel structure 31V in which pupil correction has been performed based on the configuration of the pixel structure 31U in Figure 39, and in which the light-shielding film 58V is formed in the first semiconductor region 56V and the second semiconductor region 57V directly beneath the planarization film 54V.

[0217] Specifically, with the waveguide 52, the wall base film 53, and CF 55 as reference positions, the lens 51V is shifted to the right in the figure, and the planarization film 54V, the first semiconductor region 56V, the second semiconductor region 57V, and the light-shielding film 58V are shifted to the left in the figure. Furthermore, the light-shielding film 58V is formed within the second semiconductor region 57V, which is directly beneath the planarization film 54V.

[0218] This configuration not only reduces the effect of color mixing due to oblique light in the phase difference pixels 13Vs of the pixel structure 31V shown in Figure 40, but also enables the acquisition of highly accurate phase difference information.

[0219] <<12-2. Second Modification of the Twelfth Embodiment>> In the above, we have described a pixel structure 31V in which pupil correction is performed, and in which the light-shielding film 58U is formed in the first semiconductor region 56V and the second semiconductor region 57V directly beneath the planarization film 54V. Furthermore, pupil correction may be performed by forming a light-transmitting material with a predetermined refractive index, such as glass, directly beneath the lens 51.

[0220] Figure 41 is a side cross-sectional view of a pixel structure 31W in which pupil correction is performed by forming a light-transmitting material 61W with a predetermined refractive index, such as glass, directly beneath the lens 51W, and the light-shielding film 58W is formed in the first semiconductor region 56W and the second semiconductor region 57W, which are directly beneath the planarization film 54W.

[0221] This configuration not only reduces the effect of color mixing due to oblique light in the phase difference pixels 13Ws of the pixel structure 31W shown in Figure 41, but also enables the acquisition of highly accurate phase difference information.

[0222] <<13. Thirteenth Embodiment>> In the above, we have described an example in which the layer on which the waveguide 52 and CF 55 are formed is used as a reference layer, the layer on which the lens 51, which constitutes the layer above the reference layer, is formed is shifted toward the center of the pixel region 3, and the layer on which the planarization film 54, the first semiconductor region 56, and the second semiconductor region 57, which constitute the layer below the reference layer, are formed is shifted in the opposite direction to the center of the pixel region 3.

[0223] To accommodate incident light with a larger angle of incidence, and to increase the amount of shift, the layers in which waveguide 52 and CF55 are formed, which have been used as the reference layer, may be made into a multilayer structure to achieve a larger amount of shift.

[0224] Figure 42 is a side cross-sectional view of a pixel structure 31X in which the waveguide 52 and CF55, which have been used as the reference layer, are formed in a two-layer structure.

[0225] In other words, in the pixel structure 31X of Figure 42, a lens 51X is formed in the uppermost layer, a second layer consisting of a first waveguide 52X-1 and a first CF 55X-1 is formed below it, and a third layer consisting of a second waveguide 52X-2 and a second CF 55X-2 is formed below that.

[0226] In this example, in addition to the second waveguide 52X-2 and the second CF 55X-2, the third layer has a wall base film 53X, a planarization film 54X, a first semiconductor region 56X, a second semiconductor region 57X, and a light-shielding film 58X formed on it. However, the third layer may also be multilayered as described above, for example, the lower structure shown in the figure may be the fourth layer, rather than the planarization film 54X.

[0227] By creating this multi-layer structure, it becomes possible to secure a large shift amount that can accommodate incident light from oblique directions with larger angles of incidence.

[0228] Furthermore, even with this configuration, it is possible to improve sensitivity, reduce the effects of color mixing due to oblique light, acquire highly accurate phase difference information, and suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixel.

[0229] <<14. Fourteenth Embodiment>> In the above, a pixel structure including phase-difference pixels and normal pixels has been described. Furthermore, in a pixel structure including light-shielding pixels (so-called OPB: Optical Black), the light-shielding film in the phase-difference pixels and the light-shielding film in the light-shielding pixels may be formed on the same layer and with the same thickness to reduce the number of steps required to form the light-shielding film in manufacturing and to reduce manufacturing costs.

[0230] Figure 43 is a side cross-sectional view of the pixel structure 31Y when a phase difference pixel 13Ys, a normal pixel 13Y, and a light-shielding pixel 13Yb are formed in order from left to right in the horizontal direction in the figure.

[0231] Furthermore, in the pixel structure 31Y of Figure 43, the pixel structures of the phase difference pixels 13Ys and normal pixels 13Y are the same as those of the phase difference pixels 13s and normal pixels 13 in Figure 3. In addition, the only difference in the configuration of the light-shielding pixel 13Yb from that of the normal pixel 13Y is that a light-shielding film 58 is formed over the entire surface of the planarization film 54. Moreover, the light-shielding film 58 in the phase difference pixels 13Ys and the light-shielding film 58 in the light-shielding pixels 13Yb are formed in the same layer and with the same thickness.

[0232] In other words, in the pixel structure 31Y of Figure 43, after the planarization film 54 is formed during the manufacturing process, the light-shielding film 58 for the phase difference pixel 13Ys and the light-shielding film 58 for the light-shielding pixel 13Yb can be formed simultaneously on the planarization film 54.

[0233] As a result, it becomes unnecessary to treat the light-shielding film 58 on the phase-difference pixel 13Ys and the light-shielding film 58 on the light-shielding pixel 13Yb as separate processes, thereby reducing the number of man-hours required for manufacturing and lowering manufacturing costs.

[0234] Furthermore, by using the same phase difference pixels 13Ys and normal pixels 13Y as the phase difference pixels 13s and normal pixels 13 in Figure 3, it is possible to improve sensitivity, reduce the effects of color mixing due to oblique light, acquire highly accurate phase difference information, and suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixels.

[0235] <<15. Method for Manufacturing a Photodetector>> Next, a method for manufacturing the photodetector 1 of the present disclosure will be described with reference to Figures 44 to 48. However, the photodetector 1 described herein is a method for manufacturing a photodetector 1 consisting of the pixel structure 31 described with reference to Figures 3 and 4. It is also assumed that the photodetector 1 includes phase difference pixels, normal pixels, and opaque pixels (OPB).

[0236] In the first step St1 (Figure 44), a metal layer 101 for light-shielding pixels is formed on the structure 100 corresponding to the planarization film 54.

[0237] In the second step St2, the resist 111 is formed only in the OPB region where the light-shielding pixels are formed.

[0238] In the third step St3, the metal layer 101 is removed by etching, and a metal layer 101' for the OPB is formed only in the OPB region where light-shielding pixels with resist 111 are formed.

[0239] In the fourth step St4 (Figure 45), a metal layer 121 is formed to create a light-shielding film 58 in the phase difference pixels.

[0240] In the fifth step St5, a resist 131 is formed in the area where the light-shielding film 58 is to be formed in the phase difference pixel.

[0241] In the sixth step St6, the metal layer 121 is removed by etching, and a metal layer 121' corresponding to the light-shielding film 58 is formed in the position where the resist 131 was formed.

[0242] In the seventh step St7 (Figure 46), a base layer 151 is formed to constitute the base film 53 for the wall.

[0243] In the eighth step St8, a waveguide layer 161 is formed to constitute the waveguide 52.

[0244] In the ninth step St9, resist 171 is formed in the waveguide layer 161 at the position where the waveguide 52 is to be formed. At this time, the resist 171 is formed at a position where it overlaps with a part of the edge of the metal layer 121' corresponding to the light-shielding film 58 at the boundary between the phase difference pixels and the normal pixels.

[0245] In the tenth step St10 (Figure 47), the waveguide layer 161 is removed by etching, and a waveguide layer 161' corresponding to the waveguide 52 is formed in the position where the resist 171 was formed, with the resist 171' added to it.

[0246] In the 11th step St11, the undercoat layer 151 is removed by etching, leaving a portion where a waveguide layer 161' corresponding to the waveguide 52 formed with the resist 171' added, and a metal layer 121' corresponding to the light-shielding film 58 are formed.

[0247] As a result, in the 11th step St11, as shown in an enlarged view in Figure 48, a base layer 151 corresponding to the wall base layer 53 is formed below the waveguide layer 161' corresponding to the waveguide 52. Furthermore, below the waveguide layer 161' corresponding to the waveguide 52 formed at the boundary between the phase difference pixels and the normal pixels, the boundary portion 53a of the base layer 151 corresponding to the wall base layer 53 is formed to overlap the metal layer 121' corresponding to the light-shielding film 58. Consequently, the end of the metal layer 121' corresponding to the light-shielding film 58 is formed so that the end on the waveguide 52 side is submerged below the waveguide layer 161' corresponding to the waveguide 52.

[0248] Then, in the 12th step St12, the resist 171' is removed, forming waveguides 52 on the wall base film 53. In addition, CF192 corresponding to CF55 is formed between the waveguides 52, and OCL191 corresponding to lens 51 is formed, thereby manufacturing the photodetector 1.

[0249] By the manufacturing method described above, a light detection device 1 equipped with the pixel structure 31 described with reference to Figures 3 and 4 is manufactured.

[0250] As a result, in the phase difference pixels, incident light is prevented from leaking from the boundary between the light-shielding film 58 and the wall base film 53 and entering the second semiconductor region 57 that forms the photoelectric conversion unit 21, thereby preventing the detection of an invalid phase difference signal.

[0251] Furthermore, since the waveguide 52 is composed of a reflective wall made of a low refractive index material, it can appropriately transmit incident light to the second semiconductor region 57 within CF 55 and suppress the intrusion of adjacent oblique light. This allows for improved sensitivity and suppression of color mixing due to oblique light, while appropriately acquiring phase difference information. Moreover, it makes it possible to suppress the sensitivity difference between pixels of the same color adjacent to the phase difference pixel.

[0252] <<16. Fifteenth Embodiment>> In the above, we have described a pixel structure 31Z in which, for example, as shown in the upper part of Figure 49, CF55 (not shown) of different wavelength bands of color are set between adjacent pixels in the horizontal and vertical directions for each pixel 13, and one lens 51 is provided for each. However, we have also described an example in which two pixels of a normal pixel 13, such as the phase difference pixel 13ss in Figure 5, are made into one phase difference pixel 13ss, but here we will describe the normal pixel 13.

[0253] However, for example, as shown in the lower part of Figure 49, a pixel structure 31Aa may be configured such that a CF5 of the same color is set for multiple adjacent pixels 13 (in Figure 49, a 2x2 arrangement of multiple adjacent pixels 13), and a lens 51Aa is provided for the entire set of multiple pixels 13 as a unit, thereby treating the multiple pixels 13 as if they were a single pixel 13.

[0254] Furthermore, in the following, a group of multiple pixels 13 that can process a pixel signal corresponding to the amount of incident light transmitted through a single lens 51Aa and a CF 55 of the same color (wavelength band) as a pixel signal for a single pixel in signal processing will also be referred to as a pixel unit 13u. In the case of Figure 49, the pixel unit 13u is composed of 2 x 2 pixels 13. However, the number of pixels 13 that constitute the pixel unit 13u is not limited to 2 x 2, but may be greater than that. For example, a unit composed of 3 x 3 pixels 13 may be treated as a pixel unit 13u. Also, the case in which the color of the CF 55 is set for each individual pixel 13 and a single lens 51 is formed can also be considered a pixel unit 13u consisting of one pixel 13.

[0255] Furthermore, if the wavelength bands of the lens 51Aa and CF55 are set (not shown) on a pixel unit 13u basis, it is necessary to improve the pixel sensitivity on a pixel unit 13u basis and suppress color mixing.

[0256] For this reason, for example, a light-shielding film similar to the light-shielding film 58R' used in the pixel structure 31R' of Figure 35 may be formed at the bottom of the inter-pixel separation structure, which consists of a waveguide 52 and a wall base film 53, and forms the boundary between the pixel units 13u within the planarization film 54.

[0257] Figure 50 shows a pixel structure 31Ab in which a light-shielding film 58Ab is formed below the waveguide 52 and the wall base film 53, which form the boundary between pixel units 13u within the planarization film 54.

[0258] With this configuration, even when the pixel unit 13u functions as a normal pixel, the incident light is appropriately transmitted to the second semiconductor region 57 within the CF 55, and the intrusion of adjacent oblique light is suppressed. This makes it possible to improve pixel sensitivity and suppress color mixing caused by oblique light.

[0259] The upper part of Figure 50 is a top view of the pixel unit 13u (a cross-sectional view seen from the top surface of the layer on which the light-shielding film 58Ab is formed), and the lower part of Figure 50 is a side cross-sectional view of the CD cross-section in the upper part of Figure 50 of the pixel structure 31Ab. In addition, the pixel structure 31Ab in Figure 50 basically uses the same reference numerals for components that have the same function as the pixel structure 31R' in Figure 35, and their explanation is omitted.

[0260] Furthermore, in Figure 50, the area of ​​the light-shielding film 58Ab formed when the pixel unit 13u is a normal pixel is shown in gray. However, when the pixel unit 13u is to function as a phase-difference pixel, the light-shielding film 58Ab is also formed in the area Zm of the thick dashed line in the upper and lower panels of Figure 50. That is, the area Zm is configured to cover approximately half of the surface area of ​​the pixel unit 13u, so that approximately half of the light-receiving surface of the pixel unit 13u is shielded from light, making it possible to function as a phase-difference pixel.

[0261] Therefore, even when the pixel unit 13u functions as a phase difference pixel, the formation of a light-shielding film 58Ab below the inter-pixel separation structure consisting of a waveguide 52 and a wall base film 53, which forms the boundary between the pixel units 13u within the planarization film 54, prevents incident light from leaking from the boundary of the pixel unit 13u and entering the second semiconductor region 57 that forms the photoelectric conversion unit 21, thereby preventing the detection of an invalid phase difference signal.

[0262] In addition, although Figure 50 shows an example in which the light-shielding film 58Ab is formed so as to be connected directly above the first semiconductor region 56, it is sufficient for it to be formed between the wall base film 53 and the first semiconductor region 56, and it may be connected to either the wall base film 53 or the first semiconductor region 56, or it may not be connected at all.

[0263] <<17. Sixteenth Embodiment>> In the above, an example has been described in which a light-shielding film 58Ab is formed in the boundary region between the pixel units 13u.

[0264] Incidentally, when forming a light-shielding film 58Ab in the boundary region between pixel units 13u, it is known that a cavity-like seam based on air bubbles is formed in the first semiconductor region 56 in the boundary region between adjacent pixel units 13u.

[0265] Depending on the boundary conditions between the pixel units 13u, this seam may become a large cavity, and the light-shielding film 58Ab formed on top of it may leak out and enter the seam within the first semiconductor region 56, potentially causing deterioration of dark performance or alteration of optical properties.

[0266] Here, we consider the case of a pixel structure 31Ab formed in a Bayer array manner by a pixel unit 13uR consisting of R CF55, a pixel unit 13uG consisting of G CF55, and a pixel unit 13uB consisting of B CF55, as shown in the upper part of Figure 51.

[0267] In this case, in the boundary region Zs between the lower pixel unit 13uB, which consists of CF55 B, and the pixel unit 13uG, which consists of CF55 G, of the 2x2 pixel units 13u in Figure 51, as shown in the lower left of Figure 51, the seam 211 within the first semiconductor region 56 remains within the first semiconductor region 56, and the light-shielding film 58Ab is formed on the first semiconductor region 56 as usual.

[0268] However, in the case of the boundary region Zc, which is the central position of the 2x2 pixel unit 13u, the seam 211' within the first semiconductor region 56 may be formed as a large cavity within the first semiconductor region 56, as shown in the lower right of Figure 51. In this case, when the light-shielding film 58Ab is formed on the first semiconductor region 56, it may penetrate into the seam 211' within the first semiconductor region 56. Consequently, the metal constituting the light-shielding film 58Ab may attract hydrogen and generate a dark current, which may degrade the dark-time characteristics. In addition, the metal constituting the light-shielding film 58Ab may absorb too much light, which may cause fluctuations in optical characteristics.

[0269] It has been found that the locations where seam 211' becomes a larger cavity than seam 211 are locations where there are many adjacent pixels 13, that is, locations where the separation structures between pixels 13, consisting of waveguides 52, wall underlayment 53, and first semiconductor region 56, intersect when viewed from the direction of light incidence (on the top view).

[0270] In other words, in positions where there are two adjacent pixels 13, such as the boundary region Zs, in other words, where the separation structure between pixels 13 consisting of the waveguide 52, the wall base film 53, and the first semiconductor region 56 does not intersect when viewed from the direction of incidence of the incident light (on the top view), it is known that there is a low possibility of a large cavity like the seam 211' forming, similar to the seam 211.

[0271] Furthermore, it has been found that in positions where there are four adjacent pixels 13, such as the boundary region Zc, in other words, in positions where the separation structures between pixels 13, consisting of the waveguide 52, the wall base film 53, and the first semiconductor region 56, intersect when viewed from the direction of light incidence (on the top view), there is a high probability that a large cavity like a seam 211' will form.

[0272] Therefore, in boundary regions of pixel units 13u, such as boundary region Zc, where inter-pixel separation structures intersect and are formed, the light-shielding film 58Ab may be left unformed.

[0273] Figure 52 shows a pixel structure 31Ac in which a light-shielding film is not formed in the boundary region of a pixel unit 13u, where there are more than two adjacent pixels 13 and the inter-pixel separation structures intersect.

[0274] In other words, in the pixel structure 31Ac of Figure 52, the light-shielding film 58Ac is formed in areas other than the boundary region formed by the intersection of the inter-pixel separation structures adjacent to many pixel units 13u. More specifically, the light-shielding film Ac with a width Ld1 and length Lw1 is formed on the boundary of the pixel unit 13u, on the side portion of the pixel 13 constituting the pixel unit 13u. In this example, the width Ld1 is approximately the same as the thickness of the waveguide 52, the wall base film 53, and the first semiconductor region 56, and the length Lw1 is approximately the same as the size of the pixel 13.

[0275] This configuration suppresses the formation of large cavities such as seam 211', thereby preventing the light-shielding film 58Ac from penetrating into the first semiconductor region 56. This makes it possible to suppress the resulting deterioration of dark performance and fluctuations in optical properties.

[0276] Furthermore, when the pixel unit 13u functions as a normal pixel 13, suppressing the deterioration of dark conditions and fluctuations in optical characteristics can, as a result, contribute to preventing the detection of incorrect phase difference signals and achieving appropriate phase difference signal detection when the pixel unit 13u functions as a phase difference pixel.

[0277] In other words, in the case of a pixel structure based on a pixel unit 13u, each pixel 13 constituting the pixel unit 13u is configured to be able to individually detect a pixel signal. Therefore, by suppressing the deterioration of dark conditions and fluctuations in optical characteristics based on the pixel unit 13u, it becomes possible to acquire a high-quality pixel signal when the pixel unit 13u functions as a normal pixel 13, and to acquire an appropriate phase difference signal when it functions as a phase difference pixel 13s.

[0278] <<17-1. First Modification of the Sixteenth Embodiment>> In the above, we have described an example in which the light-shielding film 58Ac is formed in the boundary region of the pixel unit 13u, where there are more than two adjacent pixels 13, and where the separation structures between pixels 13, consisting of the waveguide 52, the wall base film 53, and the first semiconductor region 56, are not formed intersecting, with a width Ld1 that is approximately the same as the width of the waveguide 52, the wall base film 53, and the first semiconductor region 56, and a length Lw1 that is approximately the same as the horizontal size of the pixel 13.

[0279] However, since the goal is to suppress color mixing and sensitivity reduction caused by oblique light on the pixel unit 13u, the length of each light-shielding film 58Ac may be slightly shorter than the size of the pixel 13.

[0280] Figure 53 shows a pixel structure 31Ad formed such that the length of each light-shielding film 58Ad is Lw2 (< Lw1).

[0281] The difference between the pixel structure 31Ad in Figure 53 and the pixel structure 31Ac in Figure 52 is that a light-shielding film 58Ad with a length Lw2 (<Lw1) is provided instead of the light-shielding film 58Ac.

[0282] Even in this configuration, the light-shielding film 58Ad is not formed in the boundary region of the pixel unit 13u where the separation structures between pixels 13 intersect. This suppresses the generation of seams 211' with large cavity diameters and prevents the light-shielding film 58Ad from leaking into the first semiconductor region 56. As a result, it becomes possible to suppress the resulting deterioration of dark-time characteristics and fluctuations in optical characteristics.

[0283] Furthermore, even if the length Lw2 is configured to be approximately a predetermined proportion shorter than the length Lw1, the difference is negligible, thus suppressing color mixing and sensitivity reduction due to oblique light reaching the pixel unit 13u.

[0284] <<17-2. Second Modification of the Sixteenth Embodiment>> In the above, we have described an example in which the length of the light-shielding film 58Ad is slightly shorter than the size of the pixel 13, but the width may be greater than the width Ld1.

[0285] Figure 54 shows a pixel structure 31Ae in which a light-shielding film is formed such that the length of each light-shielding film 58Ae is length Lw2 (< Lw1) and the width is width Ld2 (> Ld1).

[0286] The difference between the pixel structure 31Ae in Figure 54 and the pixel structure 31Ad in Figure 53 is that a light-shielding film 58Ae with a length Lw2 (<Lw1) and a width Ld2 (>Ld1) is provided instead of the light-shielding film 58Ad.

[0287] Even in this configuration, the light-shielding film 58Ae is not formed in the boundary region of the pixel unit 13u where the separation structures between pixels 13 intersect. This suppresses the generation of seams 211' with large cavity diameters, and prevents the light-shielding film 58Ae from leaking into the first semiconductor region 56. As a result, it becomes possible to suppress the resulting deterioration of dark-time characteristics and fluctuations in optical characteristics.

[0288] Furthermore, even if the length Lw2 is configured to be shorter by a predetermined proportion compared to the length Lw1, and the width Ld2 is configured to be thicker by a predetermined proportion compared to the width Ld1, it is still possible to suppress color mixing and sensitivity reduction due to oblique light reaching the pixel unit 13u.

[0289] <<17-3. Third Modification of the Sixteenth Embodiment>> In the above, we have described an example in which the length of the light-shielding film 58Ae is slightly shorter than the size of the pixel 13 and the width is greater than the width Ld1, but the width may also be smaller than the width Ld1.

[0290] Figure 55 shows a pixel structure 31Af in which a light-shielding film is formed such that the length of each light-shielding film 58Af is length Lw2 (< Lw1) and the width is width Ld3 (< Ld1).

[0291] The difference between the pixel structure 31Af in Figure 55 and the pixel structure 31Ae in Figure 54 is that a light-shielding film 58Af with a length Lw2 (< Lw1) and a width Ld3 (< Ld1) is provided instead of the light-shielding film 58Ae.

[0292] Even in this configuration, the light-shielding film 58Af is not formed in the boundary region of the pixel unit 13u where the separation structures between pixels 13 intersect. This suppresses the generation of seams 211' with large cavity diameters and prevents the light-shielding film 58Af from leaking into the first semiconductor region 56. As a result, it becomes possible to suppress the resulting deterioration of dark-time characteristics and fluctuations in optical characteristics.

[0293] Furthermore, even if the length Lw2 is configured to be shorter by a predetermined proportion compared to the length Lw1, and the width Ld3 is configured to be smaller by a predetermined proportion compared to the width Ld1, it is still possible to suppress color mixing and sensitivity reduction due to oblique light reaching the pixel unit 13u.

[0294] <<17-4. Fourth Modification of the Sixteenth Embodiment>> The length of the light-shielding film 58 may be slightly longer than the size of the pixel 13, and its width may be greater than the width Ld1.

[0295] Figure 56 shows a pixel structure 31Ag in which a light-shielding film is formed in which each light-shielding film 58Af has a length Lw3 (>Lw1) and a width Ld2 (>Ld1).

[0296] The difference between the pixel structure 31Af in Figure 55 and the pixel structure 31Af in Figure 56 is that a light-shielding film 58Ag with a length Lw3 (>Lw1) and a width Ld2 (>Ld1) is provided instead of the light-shielding film 58Ae. In this case, as shown by region Zo, a region is created where a part of the light-shielding film 58Ag intersects, but this contributes sufficiently to improving color mixing and sensitivity characteristics.

[0297] Furthermore, even in this case, since the light-shielding film 58Ag is not formed in the boundary region of the pixel unit 13u where the separation structures between pixels 13 intersect, the generation of seams 211' with large cavity diameters is suppressed, and leakage of the light-shielding film 58Ag into the first semiconductor region 56 is suppressed. As a result, it becomes possible to suppress the deterioration of dark conditions and fluctuations in optical characteristics that accompany this.

[0298] Furthermore, even if the length Lw3 is configured to be approximately a predetermined proportion longer than the length Lw1, and the width Ld2 is configured to be approximately a predetermined proportion thicker than the width Ld1, it is still possible to suppress color mixing and sensitivity reduction due to oblique light reaching the pixel unit 13u.

[0299] <<17-5. Fifth Modification of the Sixteenth Embodiment>> In the above, we have described an example in which the light-shielding film is formed as a plurality of fragmented light-shielding films so as to avoid the boundary region of the pixel unit 13u where the separation structures between pixels 13 intersect. However, a series of continuously connected light-shielding films may be formed as long as the light-shielding film is configured to avoid the boundary region of the pixel unit 13u where the separation structures between pixels 13 intersect.

[0300] The upper part of Figure 57 shows a pixel structure 31Ah in which the light-shielding film is provided in a continuous configuration, such that the light-shielding film is not formed only in the boundary region where the separation structures between pixels 13 intersect.

[0301] In other words, in the pixel structure 31Ah, instead of the light-shielding film 58Ab, a continuous configuration is adopted in which a rectangular area 231 of the light-shielding film is formed only in the boundary region of the pixel unit 13u, where the separation structures between pixels 13 intersect, from the light-shielding film 58Ab.

[0302] In other words, the light-shielding film 58Ah is formed in a rectangular, untreated area 231 in the boundary region of the pixel unit 13u where larger cavities such as seams 211' are likely to occur, and where the separation structures between pixels 13 intersect, while the rest of the structure is continuously connected. This suppresses leakage of the light-shielding film 58Ah into the seams 211' formed by cavities within the first semiconductor region 56, thereby suppressing the deterioration of dark performance and fluctuations in optical performance that may occur as a result.

[0303] In addition, although the upper pixel structure 31Ah in Figure 57 shows an example where the untreated area 231 of the light-shielding film is rectangular, it is sufficient for the light-shielding film to be untreated in the boundary area of ​​the pixel unit 13u where the separation structures between pixels 13 intersect. Therefore, as shown from left to right in the lower part of Figure 57, the untreated area may be circular 231A, a diamond-shaped untreated area 231B, and a circular untreated area 231C with a smaller diameter than untreated area 231A. The shape of the untreated area 231 shown in the lower part of Figure 57 is just an example, and other shapes are also acceptable.

[0304] Furthermore, regarding the size of the untreated areas 231, 231A to 231C, it is desirable that they be wider than, for example, the trench width formed within the first semiconductor area 56, or wider than the cavity diameter of the seam 211' expected in the first semiconductor area 56 formed within the trench. However, since seams 211' tend to form more easily closer to the center of the trench where the first semiconductor area 56 is formed, even an untreated area 231 narrower than the trench width or cavity diameter can be expected to suppress leakage of the light-shielding film 58Ah into the seam 211', especially if it is near the center of the trench where the first semiconductor area 56 is formed, directly above the position where a cavity is expected to form.

[0305] <<18. Seventeenth Embodiment>> In the above, we have described an example in which a light-shielding film 58Ab is formed in the planarization film 54 formed between the wall base film 53 and the first semiconductor region 56, in the portion directly above the first semiconductor region 56 in the figure, and a planarization film 54 is formed between the light-shielding film 58Ab and the wall base film 53. The same applies to the light-shielding films 58Ac to 58Ah.

[0306] However, the light-shielding film may be formed so as to fill the space between the wall base film 53 and the first semiconductor region 56.

[0307] Figure 58 shows a pixel structure 31Ai in which a light-shielding film is formed so as to fill the space between the wall base film 53 and the first semiconductor region 56.

[0308] In other words, in the pixel structure 31Ai of Figure 58, the light-shielding film 58Ai is formed to fill the space between the wall base film 53 and the first semiconductor region 56.

[0309] Even with this configuration, leakage of the light-shielding film 58Ai into the first semiconductor region 56 is suppressed, making it possible to suppress the resulting deterioration of dark-time characteristics and fluctuations in optical characteristics.

[0310] Furthermore, the range in which the light-shielding film 58Ai is formed, as viewed from the incident light, is the same as that of the light-shielding film 53Ac in the pixel structure 31Ac in Figure 52. In addition, the range in which the light-shielding film 58Ai is formed, as viewed from the incident light, is not limited to the light-shielding film 58Ac in the pixel structure 31Ac in Figure 52, but may also be the light-shielding film 58Ad in the pixel structure 31Ad in Figure 53, the light-shielding film 58Ae in the pixel structure 31Ae in Figure 54, the light-shielding film 58Af in the pixel structure 31Af in Figure 55, the light-shielding film 58Ag in the pixel structure 31Ag in Figure 56, and the light-shielding film 58Ah in the pixel structure 31Ah in Figure 57.

[0311] <<18-1. Modification of the 17th Embodiment>> In the above, an example has been described in which the light-shielding film is formed to fill the space between the wall base film 53 and the first semiconductor region 56. However, the light-shielding film may be formed to have a taper when viewed from the side cross-sectional direction.

[0312] Figure 59 shows a pixel structure 31Aj in which a light-shielding film is formed to fill the space between the wall base film 53 and the first semiconductor region 56, and which is tapered.

[0313] In other words, in the pixel structure 31Aj of Figure 59, the light-shielding film 58Aj is formed to fill the space between the wall base film 53 and the first semiconductor region 56, and to have a taper such that the upper part is larger and the lower part is smaller. Although not shown in the figure, the taper may also be such that the upper part is smaller and the lower part is larger.

[0314] Even in this configuration, since the light-shielding film 58Aj is not formed in the boundary region of the pixel unit 13u where the separation structures between pixels 13 intersect, leakage of the light-shielding film 58Aj into the first semiconductor region 56 is suppressed, and consequently, deterioration of dark characteristics and fluctuations in optical characteristics can be suppressed.

[0315] Furthermore, the range in which the light-shielding film 58Aj is formed, as viewed from the incident light, is the same as that of the light-shielding film 53Ac in the pixel structure 31Ac in Figure 52. Also, the range in which the light-shielding film 58Aj is formed, as viewed from the incident light, is not limited to the light-shielding film 58Ac in the pixel structure 31Ac in Figure 52, but may also be the light-shielding film 58Ad in the pixel structure 31Ad in Figure 53, the light-shielding film 58Ae in the pixel structure 31Ae in Figure 54, the light-shielding film 58Af in the pixel structure 31Af in Figure 55, the light-shielding film 58Ag in the pixel structure 31Ag in Figure 56, and the light-shielding film 58Ah in the pixel structure 31Ah in Figure 57.

[0316] <<19. Eighteenth Embodiment>> The first semiconductor region 56 may be formed within a trench formed by RDTI (Reversed Deep Trench Isolation).

[0317] Figure 60 shows a pixel structure 31Ak in which the lower first semiconductor region where the light-shielding film 58 is formed is formed within a trench formed by RDTI.

[0318] In the pixel structure 31Ak of ​​Figure 60, the lower first semiconductor region 56Ak, where the light-shielding film 58Ac is formed, is formed in a trench 252 formed by RDTI in the substrate 251.

[0319] In RDTI, a trench is formed that penetrates the substrate 251 where the first semiconductor region 56Ak is formed. Instead, a trench 252 is formed that does not reach the leading edge on the surface side (lower part in the figure) of the substrate 251, and the first semiconductor region 56Ak is formed in the formed trench 252.

[0320] Even in this configuration, the light-shielding film 58Ab is not formed in the boundary region of the pixel unit 13u where the separation structures between pixels 13 intersect. Therefore, leakage of the light-shielding film 58 into the first semiconductor region 56Ak due to the generation of seams 211' is suppressed. As a result, it becomes possible to suppress the deterioration of dark characteristics and fluctuations in optical characteristics that occur as a result.

[0321] <<20. 19th Embodiment>> The first semiconductor region 56 may be formed within a trench formed by FFTI (Front Full Trench Isolation).

[0322] Figure 61 shows a pixel structure 31Al in which the lower first semiconductor region where the light-shielding film 58 is formed is formed within a trench formed by FFTI.

[0323] In the pixel structure 31Al shown in Figure 61, the lower first semiconductor region 56Al, where the light-shielding film 58Ac is formed, is formed in the substrate 251 within a trench 252' formed by FFTI.

[0324] In FFTI, a trench is formed that penetrates the substrate 251 on which the first semiconductor region 56Al is formed. A trench 252' is formed that reaches the tip of the surface side (lower part in the figure) of the substrate 251, and the first semiconductor region 56Al is formed in the formed trench 252'.

[0325] Even in this configuration, since the light-shielding film 58Ab is not formed in the boundary region of the pixel unit 13u where the separation structures between pixels 13 intersect, leakage of the light-shielding film 58 into the first semiconductor region 56Al is suppressed, and consequently, deterioration of dark characteristics and fluctuations in optical characteristics can be suppressed.

[0326] <<21. 20th Embodiment>> An electrode may be formed in place of the first semiconductor region 56.

[0327] Figure 62 shows a pixel structure 31Am in which an electrode is formed in place of the first semiconductor region in the lower part where the light-shielding film 58 is formed.

[0328] In the pixel structure 31Am shown in Figure 62, instead of the lower first semiconductor region 56Ak (Figure 60) where the light-shielding film 58Ac is formed, an electrode 56Am made of a metal such as Poly-Si, TiN, or In2O3 is formed in a trench 252 formed by RDTI in the substrate 251.

[0329] As a result, for example, the electrode 56Am and the light-shielding film 58Ac, which is made of metal, are connected, making it possible to apply a voltage to the light-shielding film 58 via the electrode 56Am.

[0330] Furthermore, even in this configuration, the light-shielding film 58Ab is not formed in the boundary region of the pixel unit 13u where the separation structures between pixels 13 intersect. Therefore, leakage of the light-shielding film 58Ab into the first semiconductor region 56Ak is suppressed, and consequently, deterioration of dark-time characteristics and fluctuations in optical characteristics can be suppressed. In Figure 62, an example is shown in which the light-shielding film 58Ac and the electrode 56Am are physically connected, but a configuration in which they are not physically connected is also acceptable. However, if they are not physically connected, it is not possible to apply voltage to the light-shielding film 58Ab via the electrode 56Am.

[0331] <<22. 21st Embodiment>> In the above, an example has been described in which the waveguide 52 is composed of a reflective wall made of a low refractive index material, such as silicon dioxide (SiO2) fine particles. However, it may also be formed from an oxide film.

[0332] Figure 63 shows a pixel structure 31An in which the waveguide 52 is formed from an oxide film.

[0333] In the pixel structure 31An shown in Figure 63, waveguide 52An is provided instead of waveguide 52. Waveguide 52An is formed from an oxide film.

[0334] Even in this configuration, since the light-shielding film 58Ab is not formed in the boundary region of the pixel unit 13u where the separation structures between pixels 13 intersect, leakage of the light-shielding film 58Ab into the first semiconductor region 56Ab is suppressed, and consequently, deterioration of dark time characteristics and fluctuations in optical characteristics can be suppressed.

[0335] <<23. 22nd Embodiment>> In the above, we have described an example in which a waveguide 52An made of an oxide film is formed in place of the waveguide 52, but a cavity may be formed within the oxide film.

[0336] Figure 64 shows a pixel structure 31Ao in which a waveguide is used to form a cavity within the oxide film, instead of the waveguide 52An.

[0337] In the pixel structure 31Ao of Figure 64, instead of the waveguide 52, a waveguide 52Ao is formed in which a cavity 52Ao2 is provided within the oxide film 52Ao1.

[0338] Even in this configuration, since the light-shielding film 58Ab is not formed in the boundary region of the pixel unit 13u where the separation structures between pixels 13 intersect, leakage of the light-shielding film 58Ab into the first semiconductor region 56Ab is suppressed, and consequently, deterioration of dark time characteristics and fluctuations in optical characteristics can be suppressed.

[0339] <<24. 23rd Embodiment>> In the above, an example has been described in which a waveguide 52An made of an oxide film is formed in place of the waveguide 52, but a protective film may be formed on the surface of the waveguide 52.

[0340] Figure 65 is a side cross-sectional view of a pixel structure 31Ap in which a protective film is formed on the surface of the waveguide 52 instead of the waveguide 52.

[0341] In the pixel structure 31Ap shown in Figure 65, instead of the waveguide 52, a waveguide 52Ap is formed, which has a protective film 52Apa on its surface consisting of fine particles such as silicon dioxide (SiO2) and air holes.

[0342] Even in this configuration, since the light-shielding film 58Ab is not formed in the boundary region of the pixel unit 13u where the separation structures between pixels 13 intersect, leakage of the light-shielding film 58Ab into the first semiconductor region 56Ab is suppressed, and consequently, deterioration of dark time characteristics and fluctuations in optical characteristics can be suppressed.

[0343] <<25. 24th Embodiment>> In the above, we have described a pixel unit 13u in which the color of CF55 is set for every 2x2 pixels 13 and one lens 51Ab is formed. However, in a pixel unit 13u composed of a different number of pixels 13, the light-shielding film 58Ab may not be formed in the boundary region of the pixel unit 13u, where the separation structures between pixels 13 intersect and form the boundary region.

[0344] Figure 66 is a top view of a pixel structure 31Aq in which, when a lens 51 is provided for one pixel 13, that is, one pixel 13 constitutes a pixel unit 13u, and RGB CF 55 is provided in units of 2 × 2 pixel units 13u (pixel 13 in Figure 66), a light-shielding film is not formed in the boundary region of the pixel unit 13u where the separation structures between pixels 13 intersect.

[0345] In Figure 66, a red (R) CF55 is provided in the region Zr consisting of a 2x2 pixel unit 13u in the upper right of the figure, a blue (B) CF55 is provided in the region Zb consisting of a 2x2 pixel unit 13u in the lower left of the figure, and a green (G) CF55 is provided in the regions Zg consisting of 2x2 pixel units 13u in the upper left and lower right of the figure.

[0346] In the pixel structure 31Aq of Figure 66, a lens 51 is provided for each pixel 13. In other words, one pixel 13 is considered a pixel unit 13u, and a light-shielding film 58Aq is formed in the boundary region between adjacent pixel units 13u (between pixels 13), excluding the region Zx where the inter-pixel separation structures intersect in a cross shape (the region formed by the intersection of waveguides 52), which is adjacent to four pixels 13 as indicated by the dashed-dotted circle. In the figure, there is only one region Zx, but it is merely an example of a region formed by the intersection of waveguides 52.

[0347] Even in this configuration, the light-shielding film 58Aq is not formed in the boundary region of the pixel unit 13u, where the separation structures between pixels 13 intersect. As a result, leakage of the light-shielding film 58Aq into the first semiconductor region 56Ab is suppressed, making it possible to suppress deterioration of dark conditions and fluctuations in optical characteristics.

[0348] <<25-1. First Modification of the 24th Embodiment>> In the above, an example has been described in which a pixel unit 13u is formed with one pixel 13. However, in a pixel unit 13u consisting of a different number of pixels 13, the light-shielding film 58Ab may not be formed in the boundary region of the pixel unit 13u, where the separation structures between the pixels 13 intersect and form a boundary region.

[0349] Figure 67 is a top view of a pixel structure 31Ar in which a single pixel unit 13u and a 1x2 pixel unit 13u are mixed together.

[0350] In Figure 67, as in Figure 66, a red (R) CF55 is provided in the upper right region Zr, which consists of 2x2 pixels 13; a blue (B) CF55 is provided in the lower left region Zb, which consists of 2x2 pixels 13; and a green (G) CF55 is provided in the upper left and lower right regions Zg, which each consist of 2x2 pixels 13.

[0351] Furthermore, in the pixel structure 31Ar of Figure 67, in the region Zr consisting of 2x2 pixels 13 in the upper right part of the figure, lenses 51' are provided for 1x2 pixels 13 in the upper and lower sections. In other words, two pixels 13 form a pixel unit 13u, and a light-shielding film 58Ar is formed in the boundary region between adjacent pixel units 13u (between pixels 13), excluding the portion where the separation structures between pixels 13 intersect and are formed.

[0352] Furthermore, in the region Zb in the lower left of the figure, which consists of 2x2 pixels 13, lenses 51' are provided on 1x2 pixels 13 in the upper and lower sections. In other words, two pixels 13 form a pixel unit 13u, and a light-shielding film 58Ar is formed in the boundary region between adjacent pixel units 13u (between pixels 13), excluding the area where the separation structures between pixels 13 intersect.

[0353] Furthermore, in the region Zg consisting of 2x2 pixels 13 in the upper left and lower right of the figure, a lens 51 is provided for each pixel 13. In other words, one pixel 13 is considered a pixel unit 13u, and a light-shielding film 58Ar is formed in the boundary region between adjacent pixel units 13u (between pixels 13), excluding the portion formed by the intersection of the separation structures between the pixels 13.

[0354] Even with this configuration, leakage of the light-shielding film 58Ar into the first semiconductor region 56Ab is suppressed, making it possible to suppress deterioration of dark-time characteristics and fluctuations in optical characteristics.

[0355] <<25-2. Second Modification of the 24th Embodiment>> In the above, we have described an example in which a light-shielding film 58Ab is not formed in the boundary region of a pixel unit 13u consisting of pixels other than one or two x two, excluding the portion where the separation structures between the pixels 13 intersect and are formed.

[0356] Furthermore, even when a structure is formed in which each pixel 13 is divided horizontally to the left and right by providing an additional waveguide that is not connected to the central part of each pixel 13, and all pixels 13 can be treated as phase difference pixels, a light-shielding film may be formed in areas other than those where the separation structures between pixels 13 intersect.

[0357] Figure 68 is a top view of a pixel structure 31As in which, for each pixel 13, a protrusion of the waveguide 52 is provided from the central part of the waveguide 52 at the upper limit of the pixel 13, thereby dividing the pixel 13 horizontally to the left and right, and creating a structure in which all pixels 13 can be treated as phase difference pixels.

[0358] In other words, in the pixel structure 31As of Figure 68, a convex portion 52As of the waveguide is formed from the center of the upper and lower waveguides 52 of each pixel 13 to near the center of the pixel 13. By enabling the extraction of the left and right pixel signals of the convex portion 52As as phase difference signals, all pixels can be treated as phase difference pixels. Furthermore, by adding the two phase difference signals, they can be treated as a single pixel signal.

[0359] In Figure 68, a red (R) CF55 is provided in the upper right region Zr, which consists of 2x2 pixels 13; a blue (B) CF55 is provided in the lower left region Zb, which consists of 2x2 pixels 13; and a green (G) CF55 is provided in the upper left and lower right regions Zg, which each consist of 2x2 pixels 13.

[0360] Furthermore, in the pixel structure 31As of Figure 68, a lens 51 is provided for each pixel 13, in other words, one of the pixels 13 is a pixel unit 13u, and in addition, among the waveguides 52 that surround the rectangular periphery of each, a convex portion 52As of the waveguide 52 is formed from near the center to near the center of the upper and lower waveguides 52 in the figure.

[0361] In the pixel structure 31As shown in Figure 68, the light-shielding film 58As is formed in the boundary region between adjacent pixel units 13u (between pixels 13), excluding the regions Zx1 and Zx2, which are formed by the intersection of separation structures between pixels 13 as indicated by the dashed-dotted circles. In the figure, regions Zx1 and Zx2 are shown as one each, but they merely represent an example of a region formed by the intersection of separation structures between pixels 13.

[0362] Even with this configuration, leakage of the light-shielding film 58As into the first semiconductor region 56Ab is suppressed, making it possible to suppress deterioration of dark-time characteristics and fluctuations in optical characteristics.

[0363] <<25-3. Third Modification of the 24th Embodiment>> In the above, we have described an example in which, in the pixel 13, a convex portion 52As of the waveguide 52 is formed from near the center to near the center of the upper and lower waveguides 52 in the figure, and a light-shielding film is formed in the region excluding the regions Zx1 and Zx2 formed by the intersection of the separation structures of the pixel 13.

[0364] However, even if, for each pixel 13, a convex portion 52At of the waveguide 52 is formed from the left and right sides in addition to the top and bottom in the figure, from near the center of the waveguide 52 to near the center, the light-shielding film may be formed in the region excluding the regions Zx1 and Zx2 where the separation structures of the pixel unit 13u intersect.

[0365] Here, the configuration in which a protrusion 52At of the waveguide 52 is formed from the left and right sides, in addition to the top and bottom in the figure, from near the center of the waveguide 52 to near the center of the pixel 13, can be considered as a configuration in which the intersection portion of the central waveguide 52 in the pixel structure 31Ac described with reference to Figure 52 has been removed.

[0366] In other words, for example, when the pixel structure 13Ac described with reference to Figure 32 is formed, as shown in the upper left of Figure 69, the waveguide 52, the wall base film 53, and the first semiconductor region 56 in the region Zx11 within the central dashed circle are removed, resulting in the pixel structure 31At shown in the upper right of Figure 69, in which the convex portion 52At of the waveguide 52 is formed from near the center of the waveguide 52 in the upper, lower, left, and right directions of each pixel 13 to near the center of the pixel 13.

[0367] However, in pixel structure 31Ac, the pixel unit 13u is composed of 2x2 pixels 13, whereas in pixel structure 31At, the pixel unit 13u is composed of 1 pixel 13. For this reason, the pixel unit 13u in the upper right part of pixel structure 31At in Figure 69 is actually 1 / 4 the size of the pixel unit 13u in the upper left part of pixel structure 31Ac in Figure 32.

[0368] In the pixel structure 31At shown in the lower center of Figure 69, which is an enlarged view of the pixel structure 31At in the upper right of Figure 69, a light-shielding film is formed in the boundary region of the pixel unit 13u, excluding the region Zx21 where the inter-pixel structures of the pixels 13 intersect (the region formed by the intersection of the waveguides 52), and the regions Zx22-1 and Zx22-2 where the waveguides 52 and the protrusions 52At intersect. Alternatively, a light-shielding film 58Ac may be formed over the entire boundary region of the pixel unit 13u, and an untreated region 231 may be formed in regions Zx21, Zx22-1, and Zx22-2.

[0369] Even with this configuration, leakage of the light-shielding film 58At into the first semiconductor region 56Ab is suppressed, making it possible to suppress deterioration of dark-time characteristics and fluctuations in optical characteristics.

[0370] <<26. 25th Embodiment>> In the above, we have described an example in which the lens 51, waveguide 52, wall base film 53, CF 55, light-shielding film 58, and first semiconductor region 56 are formed coaxially. However, a pixel structure in which pupil correction is performed for each pixel unit 13u according to the distance from the center position of the pixel region 3 is also possible.

[0371] The pupil correction is as described with reference to the pixel structure 31B in Figure 8. That is, pixels closer to the edge of the pixel region 3 from the center need to receive oblique light with a large angle of incidence. Therefore, pupil correction is a correction that makes it easier to receive oblique light by shifting the lens 51 to the center of the pixel region 3 according to the distance from the center of the pixel region 3, for example, using the positions of the waveguide 52, the wall base film 53, and CF 55 as references, and shifting the planarization film 54, the light-shielding film 58, the first semiconductor region 56, and the second semiconductor region 57 away from the center of the pixel region 3.

[0372] Figure 70 shows, in the upper part of the figure, a diagram illustrating the relative positional relationship between the position of pixel unit 13uc at the center of the pixel region 3 and the position of pixel unit 13uh at a predetermined distance from the center in the horizontal direction (H direction).

[0373] Furthermore, the left side of the middle section of the figure is a top view of the pixel structure 31Auc of a pixel unit 13uc near the center of the pixel region 3, and the right side of the middle section is a top view of the pixel structure 31Auh of a pixel unit 13uh located at a predetermined distance from the center in the horizontal direction of the pixel region 3.

[0374] Furthermore, the lower left portion of the figure is a side cross-sectional view of the pixel structure 31Auc of the pixel unit 13uc near the center of the pixel region 3, and the lower right portion is a side cross-sectional view of the pixel structure 31Auh of the pixel unit 13uh located at a predetermined distance from the center in the horizontal direction of the pixel region 3.

[0375] In other words, as shown in the lower part of Figure 70, by moving a predetermined distance away from the center position, the lens 51Auh of the pixel unit 13uh shifts in the direction of the center position of the pixel region 3 (to the left in the figure), with reference to the positions of the waveguide 52, the wall base film 53, and CF 55, depending on the distance. Conversely, the planarization film 54, the light-shielding film 58, the first semiconductor region 56, and the second semiconductor region 57 shift to the right in the figure, away from the center position of the pixel region 3.

[0376] Consequently, in order to block incident light coming from an oblique direction, the light-shielding portion 58Auh is shifted slightly to the left relative to the first semiconductor region 56, so the area overlapping with the first semiconductor region 56 becomes smaller. As a result, the area overlapping with the first semiconductor region 56 decreases, so as shown in the middle section of Figure 70, the unworked area 231Auh of the light-shielding portion 58Auh in the pixel unit 13uh can be made smaller than the unworked area 231 of the light-shielding portion 58Auc in the pixel unit 13uc near the center as the distance from the center position increases. The basic shape and arrangement of the unworked area 231Auc are based on the unworked area 231 in the pixel structure 31Ah described with reference to Figure 57, but other shapes are also acceptable.

[0377] Since this is a change that corresponds to the distance from the center position, it is not limited to the horizontal direction; for example, as shown in Figure 71, a similar change occurs when the distance changes in the diagonal direction in the figure. However, in this case, the changes in distance in the horizontal and vertical directions are combined.

[0378] In Figure 71, the upper part of the figure illustrates the relative positional relationship between the pixel unit 13uc at the center of the pixel region 3, the pixel unit 13u1 located at a distance of 1 to the upper right from the center, and the pixel unit 13u2 located at a distance of 2 to the upper right (> 1st distance).

[0379] Furthermore, the lower left section of the figure is a top view of the pixel structure 31Auc of pixel unit 13uc near the center of the pixel region 3 (same as the middle left section of Figure 70), the lower center section is a pixel structure 31Au1 of pixel unit 13u1 located at a position a first distance away from the center diagonally upward to the right, and the lower right section is a top view of the pixel structure 31Au2 of pixel unit 13u2 located at a second distance (>first distance) away from the center in the horizontal direction of the pixel region 3.

[0380] In other words, in order to block incident light coming from an oblique direction, the light-shielding portion 58Au1 is slightly shifted diagonally upward to the right relative to the first semiconductor region 56, and the overlapping area becomes smaller. As a result, the area overlapping with the first semiconductor region 56 is reduced, so as shown in the lower center of Figure 71, the unprocessed region 231Au1 in the pixel unit 13Au1 can be made smaller than the unprocessed region 231 in the pixel unit 13uc near the center as the distance from the center position increases. Furthermore, as the distance increases even further than the first distance, near the edge of the pixel region 3, the light-shielding portion 58Au1 does not overlap with the first semiconductor region 56, so as shown in the lower right part of Figure 71, the unprocessed region 231 in the pixel unit 13Au2 becomes unnecessary.

[0381] Even with this configuration, leakage of the light-shielding film 58At into the first semiconductor region 56Ab is suppressed, making it possible to suppress deterioration of dark-time characteristics and fluctuations in optical characteristics.

[0382] <<27. 26th Embodiment>> In the above, we have described an example realized by a pixel unit 13u using two sets of two normal pixels 13. However, it is also possible to use two sets of two normal pixels 13 and a phase difference pixel unit 13us that functions as a phase difference pixel.

[0383] Figure 72 shows a pixel structure 31Aw in which two normal pixels 13 are used in a 2x2 configuration to form a phase difference pixel unit 13us that functions as a phase difference pixel.

[0384] In other words, in the pixel structure 31Aw of Figure 72, a 2x2 pixel region is configured as a pixel unit 31u, and of these, the second pixel unit 13u from the top on the right side has its right half covered by a light-shielding portion 58Awz, and is configured as a pixel unit 13us that functions as a phase difference pixel. Since the right half of the pixel unit 13us that functions as a phase difference pixel is covered by the light-shielding portion 58Awz in the figure, an untreated area 231 of the light-shielding portion 58Awz is formed in the boundary region where the separation structures between pixels 13 intersect, which is the central position.

[0385] Even in this configuration, since the light-shielding film 58Aw is not formed in the boundary region of the pixel unit 13u where the inter-pixel separation structures intersect, leakage of the light-shielding film 58Aw into the first semiconductor region 56Ab is suppressed, making it possible to suppress deterioration of dark conditions and fluctuations in optical characteristics.

[0386] <<28. The 27th Embodiment>> By the way, there is a phase-detection autofocus method in digital cameras. The phase-detection method is a method that applies the technique of so-called triangulation, and it is a method that determines the distance by the difference in angle when the same subject is viewed from two different points. In the case of the phase-detection method, the images of light that have passed through different parts of the lens, for example, the light beams from the right and left sides of the lens are used. In the phase-detection method, by measuring the distance, it is possible to determine how much the lens needs to be moved to the in-focus position.

[0387] Image-plane phase-detection autofocus performs autofocus using a phase-detection method with an image sensor. The image sensor is equipped with a microlens for light collection, and by adding an aperture member to limit the light incident on this microlens, it can be made into an image sensor for phase-detection autofocus (see, for example, Japanese Patent Application Publication No. 2017-054984).

[0388] This technology was developed in consideration of these circumstances, and may also be designed to improve the characteristics of phase difference detection.

[0389] <Configuration of Imaging Device> The technology described below can be applied to autofocus mechanisms of imaging devices and other devices that include a photodetector element. While there are mainly two types of autofocus methods, contrast-based and phase-difference, this technology is applicable to the phase-difference method, and the following explanation will use image-plane phase-difference autofocus as an example.

[0390] Image plane phase-detection autofocus is applicable to a wide range of electronic devices that use semiconductor packages in their image acquisition (photoelectric conversion) units, including imaging devices such as digital still cameras and video cameras, mobile terminal devices with imaging capabilities such as mobile phones, and photocopiers that use imaging devices in their image reading units.

[0391] Figure 73 is a block diagram showing an example of the configuration of an electronic device according to this technology, such as an imaging device. As shown in Figure 73, the imaging device 310 according to this technology includes an optical system including a lens group 321, an image sensor (imaging device) 322, a DSP (Digital Signal Processor) circuit 323, a frame memory 324, a display unit 325, a recording unit 326, an operation unit 327, and a power supply unit 328. The DSP circuit 323, frame memory 324, display unit 325, recording unit 326, operation unit 327, and power supply unit 328 are interconnected via a bus line 329.

[0392] The lens group 321 captures incident light (image light) from the subject and forms an image on the imaging surface of the image sensor 322. The image sensor 322 converts the amount of incident light formed on the imaging surface by the lens group 321 into an electrical signal on a pixel-by-pixel basis and outputs it as a pixel signal.

[0393] The DSP circuit 323 processes signals from the image sensor 322. For example, as will be described in detail later, the image sensor 322 has pixels for detecting focus, and the DSP circuit 323 processes signals from such pixels to perform focus detection. The image sensor 322 also has pixels for constructing an image of the captured subject, and the DSP circuit 323 processes signals from such pixels and expands them into the frame memory 324.

[0394] The display unit 325 consists of a panel-type display device such as a liquid crystal display device or an organic EL (electroluminescence) display device, and displays a video or still image captured by the image sensor 322. The recording unit 326 records the video or still image captured by the image sensor 322 onto a recording medium.

[0395] The operation unit 327 issues operation commands for various functions of the imaging device under the user's control. The power supply unit 328 appropriately supplies various power sources to the DSP circuit 323, frame memory 324, display unit 325, recording unit 326, and operation unit 327.

[0396] <About Autofocus Using Image-Plane Phase Detection> Next, we will explain autofocus using image-plane phase detection. As an example of an imaging device, we will explain the case where an image sensor for obtaining an image and an image sensor for phase detection are mixed together.

[0397] Figure 74 is a diagram illustrating an example of the arrangement of phase-difference detection pixels 361 and 362 when performing autofocus using the image plane phase-difference method. The imaging plane of the image sensor 322 is provided with a pixel array section 351 in which pixels are arranged in a matrix in two dimensions, and a predetermined number of pixels in the pixel array section 351 are assigned as phase-difference detection pixels. Multiple phase-difference detection pixels 361 and 362 are provided at predetermined positions within the pixel array section 351. Pixels that are not phase-difference detection pixels 361 and 362 are referred to as normal pixels 371.

[0398] The pixel array 351 shown in Figure 74 represents a portion of the pixel array 351 that constitutes the image sensor 322. Of the pixel array 351 shown in Figure 74, four pixels are provided as phase difference detection pixels, and the other pixels are provided as normal pixels 371. Phase difference detection pixels 361-1 and 361-2 are right-side light-shielding pixels, and phase difference detection pixels 362-1 and 362-2 are left-side light-shielding pixels.

[0399] The right-side shading pixel has a structure in which the right side is shaded, and the left-side shading pixel has a structure in which the left side is shaded. The right-side and left-side shading pixels are used as a pair of phase difference detection pixels. By shading either the right or left side, the system is configured to enable the selection of the angle of incident light for reception.

[0400] In the example shown in Figure 74, we explained the case where the pair of phase difference detection pixels are not located next to each other. However, the phase difference detection pixels may be located at different, separate locations as shown in Figure 74, or they may be located next to each other.

[0401] <Example of Planar Configuration of Phase Difference Detection Pixel in the 27th Embodiment> Figure 75 shows an example of the planar configuration of the phase difference detection pixel 361. In the following description, the phase difference detection pixel 361, which is a right-side light-shielding pixel, will be used as an example.

[0402] When looking at a single phase difference detection pixel 361, the photoelectric conversion unit 401 is surrounded by an inter-pixel separation unit 402. In the case of a phase difference detection pixel 361, half of the pixel is covered by a light-shielding film 403.

[0403] As shown in Figure 75, the right side of the pixel is covered with the light-shielding film 403 because it is a right-side light-shielding pixel. Although not shown in the figure, if it is a left-side light-shielding pixel, the left side of the pixel is covered with the light-shielding film 403.

[0404] The light-shielding film 403 is provided with notches 404-1 and 404-2. Hereafter, when it is not necessary to distinguish between notches 404-1 and 404-2 individually, they will simply be referred to as notches 404.

[0405] The notch 404 is a region that is originally formed as part of the light-shielding film 403 when the light-shielding film 403 is formed in a rectangular shape in a plan view. It is provided as a region that is not formed, and is a region that is cut out from the original shape of the light-shielding film 403. Such a region will be described here as the notch 404.

[0406] The notch 404 is provided in the region where the light-shielding film 403 is originally formed, which corresponds to the intersection where the inter-pixel separation portions 402 intersect. The notch 404 of the light-shielding film 403 is a region where the light-shielding film 403 is not provided. The notch 404 is a region that is formed when the light-shielding film 403 is formed so as to avoid the intersection where the inter-pixel separation portions 402 intersect. An oxide film 408 (Figure 77) is formed in the region of the notch 404.

[0407] Notch 404-1 is provided on the intersection of the inter-pixel separation section 402 located in the upper right of the phase difference detection pixel 361 in the figure. Notch 404-2 is provided on the intersection of the inter-pixel separation section 402 located in the lower right of the phase difference detection pixel 361 in the figure. The reason for providing such notches 404 will be explained with reference to an example of the cross-sectional configuration of the phase difference detection pixel 361.

[0408] Figure 76 shows an example of the cross-sectional configuration of the phase difference detection pixel 361 in the line segment A-A' of Figure 75, and Figure 77 shows an example of the cross-sectional configuration of the phase difference detection pixel 361 in the line segment B-B' of Figure 75.

[0409] The cross-sectional configuration example of the phase difference detection pixel 361 shown in Figure 76 is an example of the cross-sectional configuration of the phase difference detection pixel 361 in a region without a notch 404. A pixel separation portion 402 is provided on the side surface of the photoelectric conversion unit 401. The pixel separation portion 402 shown in Figure 76 is provided non-penetratingly through the semiconductor substrate on which the photoelectric conversion unit 401 is provided. A light-shielding film 403 and an oxide film 408 are provided on the light incident surface side of the photoelectric conversion unit 401.

[0410] In the diagram, a light-shielding film 403 is provided to cover approximately the right half, and an oxide film 408 is provided on the remaining half. It is also possible to configure the device so that the oxide film 408 is provided on the upper and / or lower surface of the light-shielding film 403. For example, if, during manufacturing, after forming the light-shielding film 403, an oxide film 408 is deposited on the light-shielding film 403 to flatten it, then the oxide film 408 will also be deposited on the upper surface of the light-shielding film 403.

[0411] A color filter 406 is provided on the light-shielding film 403 and the oxide film 408. Waveguides 405 are provided at both ends of the color filter 406. The waveguides 405 have the function of preventing incident light from leaking into adjacent pixels and guiding the incident light towards the photoelectric conversion unit 401. An on-chip lens 407 is provided on the color filter 406.

[0412] The inter-pixel isolation region 402 is a region formed by filling a non-penetrating trench in the semiconductor substrate with a predetermined material. Here, we will continue the explanation using the example where the material constituting the oxide film 408 is also filled into the trench to form the inter-pixel isolation region 402.

[0413] A cavity 411 is provided inside the inter-pixel isolation section 402. By providing the cavity 411, the ability to electrically isolate pixels can be enhanced. The cavity 411 is formed when a predetermined material is filled into the trench during the formation of the inter-pixel isolation section 402. The cavity 411 may be formed at a higher position in the region where the inter-pixel isolation sections 402 intersect (hereinafter referred to as the intersection) compared to the region where they do not intersect (hereinafter referred to as the non-intersection). A higher position means a position closer to the light incident surface in the depth direction (vertical direction in the figure), and closer to the position where the light-shielding film 403 is formed.

[0414] The cavities 411 at the intersections may exist near the location where the light-shielding film 403 is provided, or even extend to the location where the light-shielding film 403 is provided. If the light-shielding film 403 is formed at the intersections during manufacturing, the material forming the light-shielding film 403, such as metal, may enter the cavities 411. If this occurs, the inter-pixel separation portion 402 at the intersections will contain a portion of metal. This can cause dark current to be generated, potentially leading to noise generation and deterioration of pixel characteristics.

[0415] By configuring the notch 404 of the light-shielding film 403 to be located at the intersection of the inter-pixel separation portion 402, it is possible to prevent the material of the light-shielding film 403 from flowing into the inter-pixel separation portion 402, thereby preventing deterioration of the pixel characteristics.

[0416] Figure 77 shows an example of the cross-sectional configuration of a phase difference detection pixel 361 in the region where the notch 404 is provided. The example of the cross-sectional configuration of the phase difference detection pixel 361 shown in Figure 77 is basically the same as the example of the cross-sectional configuration of the phase difference detection pixel 361 shown in Figure 76, but differs in that the light-shielding film 403 is not provided on the inter-pixel separation portion 402. The region of the notch 404 is provided with an oxide film 408 (an oxide film 408 formed in the same process as the inter-pixel separation portion 402).

[0417] Thus, a notch 404 is located at the intersection of the pixel separation portion 402, an oxide film 408 is formed in that region, and a light-shielding film 403 is located at the non-intersecting portion.

[0418] Since a notch 404 is provided on the inter-pixel separation section 402, the light-shielding film 403 itself is not provided. As shown in Figure 77, even if the cavity 411 is formed at a high position, the position of the notch 404 prevents the material of the light-shielding film 403 from flowing into the inter-pixel separation section 402.

[0419] <Configuration of the cutout portion> Figure 78 shows an example of the configuration of the cutout portion 404 of the light-shielding film 403. Figure 78, like Figure 75, shows an example of the planar configuration of the phase difference detection pixel 361.

[0420] The notch 404 shown in A of Figure 78 is formed in the same rectangular shape as the notch 404 shown in Figure 75, but its size is different, being larger than the notch 404 shown in Figure 75.

[0421] If the notch 404 is formed in a square shape, for example, and the length of one side is taken as the size of the notch 404, then the size of the notch 404 is formed to be larger than the width of the inter-pixel separation portion 402 (the width of the trench). Furthermore, taking into account the amount of misalignment when manufacturing the light-shielding film 403, the notch is formed to be larger than the width of the inter-pixel separation portion 402 plus the amount of misalignment. The size of the notch 404 (length of one side) is set to be, for example, about 1.5 to 2.0 times the width of the inter-pixel separation portion 402 (trench).

[0422] The notch 404 shown in Figure 78B has a triangular shape. The shape of the notch 404 must be such that it avoids the intersection of the inter-pixel separation section 402, and any shape can be used as long as this condition is met. For example, a triangular shape can be used as shown in Figure 78B. Also, as shown in Figure 78C, if a triangular shape is used for the notch 404, its size can be made larger.

[0423] The size of the notch 404 can be made large enough so as not to degrade the function of the light-shielding film 403. While triangular and quadrilateral shapes are used as examples here, polygonal shapes with more than four sides are also acceptable.

[0424] As shown in Figure 79A, a fan shape can also be adopted for the shape of the notch 404. In Figure 79A, the notch 404 is formed in the light-shielding film 403 with a circular arc shape in which a part of the corner of the light-shielding film 403 is recessed inward.

[0425] The notch 404 shown in Figure 79B has the same shape as the notch 404 shown in Figure 79A, but is larger than the notch 404 shown in Figure 79A.

[0426] As shown in Figure 79C, a fan shape can also be adopted for the shape of the notch 404. In the notch 404 shown in Figure 79C, the light-shielding film 403 is formed in an arc shape in which a part of the corner of the light-shielding film 403 bulges outwards.

[0427] The notch 404 shown in Figure 79D has the same shape as the notch 404 shown in Figure 79C, but is larger than the notch 404 shown in Figure 79C.

[0428] Thus, the shape and size of the notch 404 can be set as appropriate, and it is formed in a shape and size that avoids the intersection of the pixel separation portion 402. It should be noted that the shape and size are not limited to those shown, and other shapes and sizes can also be applied.

[0429] <<29. 28th Embodiment>> Figure 80 is a diagram illustrating a planar configuration of the phase difference detection pixel 361 in the 28th embodiment, and Figure 81 is a diagram showing an example of a cross-sectional configuration of the phase difference detection pixel 361 along the line segment C-C' in Figure 80.

[0430] In the example of the planar configuration of the phase difference detection pixel 361 shown in Figure 80, the light-shielding film 403 is also formed in the region where the notch 404 is located, corresponding to the intersection of the inter-pixel separation portion 402. In the example shown in Figure 80, the light-shielding film 403 is formed in a rectangular shape, and the light-shielding film 403 is also formed at the corners.

[0431] The cross-sectional configuration example of the phase difference detection pixel 361 shown in Figure 81 is an example of the cross-sectional configuration of the region including the notch 404. In cross-sectional view, the light-shielding film 403 is formed with tapered ends. In cross-sectional view, the light-shielding film 403 is formed with a trapezoidal shape, and when the side on the light incident surface side is considered the upper base, the upper base is formed to be longer than the lower base.

[0432] By making both ends of the light-shielding film 403 tapered, when viewed from the light incident surface side, the light-shielding film 403 is positioned on the intersection of the inter-pixel separation section 402, as shown in Figure 80. However, although not shown, when viewed from the photoelectric conversion section 401 side, the light-shielding film 403 is not positioned at the intersection of the inter-pixel separation section 402, and a notch 404 can be provided.

[0433] By providing a tapered portion in the light-shielding film 403, and by positioning the tapered portion on the intersection of the inter-pixel separation portion 402, a region of the light-shielding film 403 that is not present on the surface facing the photoelectric conversion portion 401 can be created in the light-shielding film 403, and this region can be made into a notch 404.

[0434] The notch 404 can be a region in which the light-shielding film 403 is provided in a tapered shape.

[0435] In Figure 81, the case where both ends of the light-shielding film 403 are formed in a tapered shape was used as an example. In other words, the example described was a configuration in which regions corresponding to the notches 404 are provided on both sides of the light-shielding film 403. However, it is also possible to provide the notches only on the side of the inter-pixel separation portion 402 and not on the opposite side of where the inter-pixel separation portion 402 is located (towards the center of the pixel).

[0436] If a tapered shape is also provided on the center side of the pixel, the effects described with reference to Figure 82 can be obtained.

[0437] Figure 82A shows the configuration of the phase difference detection pixel 361 when the light-shielding film 403 does not have a tapered shape. The arrow shown in Figure 82A represents incident light. Incident light L1 is light that is incident on the phase difference detection pixel 361 from the left diagonal direction in the figure, and hits the edge of the light-shielding film 403, preventing it from entering the photoelectric conversion unit 401. Incident light L2 is light that is incident on the phase difference detection pixel 361 from the right diagonal direction in the figure, and since the phase difference detection pixel 361 is a right light-shielding pixel, it hits the light-shielding film 403 and does not enter the photoelectric conversion unit 401. In this case, there is a possibility that the incident light L1 from the left direction, which should be incident, will not be incident.

[0438] Figure 82B shows the configuration of the phase difference detection pixel 361 when the light-shielding film 403 has a tapered shape. The incident light L1 is light that is incident on the phase difference detection pixel 361 from the left diagonal direction in the figure. If the light-shielding film 403 is not formed in a tapered shape, this light would hit the edge of the light-shielding film 403 and its incidence to the photoelectric conversion unit 401 would be obstructed. However, because it is formed in a tapered shape, it does not hit the edge of the light-shielding film 403 and is incident on the photoelectric conversion unit 401. The incident light L2 is light that is incident on the phase difference detection pixel 361 from the right diagonal direction in the figure. Since the phase difference detection pixel 361 is a right-shielding pixel, it hits the light-shielding film 403 and is not incident on the photoelectric conversion unit 401. In this case, the incident light L1 that should be incident from the left direction can be incident.

[0439] By providing a tapered shape on the surface of the light-shielding film 403 that faces the pixel center, the sensitivity of the phase difference detection pixel 361 can be improved.

[0440] <<30. The 29th Embodiment>> Figure 83A is a diagram illustrating the planar configuration of the phase difference detection pixel 361 in the 29th embodiment, and Figure 83B is a diagram showing an example of the cross-sectional configuration of the phase difference detection pixel 361 along the line segment D-D' in Figure 83A.

[0441] In the planar configuration example of the phase difference detection pixel 361 shown in Figure 83A, the portion corresponding to the notch 404 is provided not only at the intersection of the inter-pixel separation portion 402 but also on the non-intersecting portion. The light-shielding film 403 is not formed on the inter-pixel separation portion 402, but only on the photoelectric conversion portion 401.

[0442] Referring to the example of the cross-sectional configuration of the phase difference detection pixel 361 shown in Figure 83B, a portion corresponding to the notch 404 is also provided on the region corresponding to the non-intersecting portion of the inter-pixel separation portion 402. The light-shielding film 403 is not formed on the inter-pixel separation portion 402, but only on the photoelectric conversion portion 401.

[0443] In this way, the notch 404 can be provided in the inter-pixel separation portion 402, and the light-shielding film 403 itself can be configured not to be provided on the inter-pixel separation portion 402.

[0444] As shown in Figure 84, in combination with the 28th embodiment, the end of the light-shielding film 403 may be formed in a tapered shape in cross-sectional view. Figure 84 is a diagram showing another example of a cross-sectional configuration of the phase difference detection pixel 361 in line segment D-D' of A in Figure 83.

[0445] As shown in Figure 84, the light-shielding film 403 is formed with tapered ends in cross-sectional view. The lower bottom of the light-shielding film 403 is not located on the inter-pixel separation portion 402. In other words, the notch portion 404 of the light-shielding film 403 is located on the inter-pixel separation portion 402. The upper bottom of the light-shielding film 403 may overlap a part of the inter-pixel separation portion 402.

[0446] <Regarding Manufacturing> The manufacturing of the phase difference detection pixels 361 in the 27th to 29th embodiments will be described with reference to Figure 85. In the explanation with reference to Figure 85, the manufacturing of the notch portion 404 will be described.

[0447] In step S11, trenches are formed in the semiconductor substrate 400, and for example, an insulator such as an insulating material that constitutes the pixel isolation part 402 is filled in the trenches. As the insulator, for example, silicon oxide is used. The structure in the trench may be a single layer of silicon oxide or a multilayer structure composed of silicon oxide and polysilicon. The pixel isolation part 402 may be configured such that a metal film such as aluminum or tungsten is formed thereon.

[0448] On the semiconductor substrate 400, a film made of the insulator filled in the trench is also formed. This film is used as the oxide film 408. The material filled in the pixel isolation part 402 and the material used as the oxide film 408 can be the same material, and during manufacturing, the filling into the trench and the film formation can be performed in the same process.

[0449] In step S12, the oxide film 408 in the region where the light-shielding film 403 is to be formed is removed by etching. As shown in step S12, since the region of the light-shielding film 403 where the notch 404 is provided is on the pixel isolation part 402, the oxide film 408 remains in that region without being etched. When forming the light-shielding film 403 in the 27th embodiment, although not shown, in the region other than the notch 404, the pixel isolation part 402 is also etched and the oxide film 408 is removed.

[0450] When forming the light-shielding film 403 in the 28th embodiment, etching is performed so that the end of the light-shielding film 403 has a tapered shape. When, as in the 29th embodiment, the light-shielding film 403 is not formed on the pixel isolation part 402, in other words, when the notch 404 is located on the pixel isolation part 402, etching is performed so that the oxide film 408 remains without being etched on the pixel isolation part 402 as shown in step S12.

[0451] In step S13, a light-shielding film 403 is formed. The region where the oxide film 408 has been removed by etching is filled with a material constituting the light-shielding film 403, such as a metal, and the material is also formed on the oxide film 408. When a metal is used as the material of the light-shielding film 403, for example, tungsten (W), chromium (Cr), or the like can be used. As will be described later, the light-shielding film 403 may be composed of a single layer or may be configured as a laminated film in which a plurality of materials are laminated.

[0452] If, in step S12, the intersection portion of the pixel isolation portion 402 is also etched, the intersection portion of the pixel isolation portion 402 becomes an opened region, and in step S13, for example, a metal that becomes the light-shielding film 403 may flow in from the opened region, and the metal may also flow into the cavity 411 in the pixel isolation portion 402. In the present embodiment, as described above, at least the intersection portion of the pixel isolation portion 402 is not etched, so that the region is not opened, and it is possible to prevent, for example, a metal that becomes the light-shielding film 403 from flowing in.

[0453] In step S14, the material of the light-shielding film 403 formed on the oxide film 408 is removed, and planarization is performed. After planarization, a planarization film may be further formed. Further, after planarization, a color filter 406 and an on-chip lens 407 are formed.

[0454] <<31. 30th Embodiment>> FIG. 86 is a diagram illustrating a cross-sectional configuration example of the pixel 361 for phase difference detection in the 30th embodiment. The cross-sectional configuration example of the pixel 361 for phase difference detection shown in FIG. 86 is a cross-sectional configuration example taken along the line segment B - B' in the planar configuration example of the pixel 361 for phase difference detection shown in FIG. 75.

[0455] A planarization film 501 is formed on the light-incident surface side of the light-shielding film 403 and the oxide film 408 of the pixel 361 for phase difference detection shown in FIG. 86. As described in step S14 of FIG. 85, after the light-shielding film is formed and planarized, the planarization film 501 is further formed, whereby the pixel 361 for phase difference detection having the planarization film 501 can be manufactured.

[0456] The planarization film 501 may be formed from the same material as the oxide film 408. The planarization film 501 may also be formed from a different material than the oxide film 408; for example, tantalum oxide, alumina, etc., can be used. By providing such a planarization film 501, dark current can be suppressed.

[0457] <<32. 31st Embodiment>> Figure 87 is a diagram illustrating an example of the cross-sectional configuration of the phase difference detection pixel 361 in the 31st embodiment. The example of the cross-sectional configuration of the phase difference detection pixel 361 shown in Figure 87 is an example of the cross-sectional configuration at line segment B-B' in the example of the planar configuration of the phase difference detection pixel 361 shown in Figure 75.

[0458] This differs from other embodiments in that an oxide film 408 is formed on the light incident side of the light-shielding film 403 of the phase difference detection pixel 361 shown in Figure 87A. When the planarization film 501 in the 30th embodiment shown in Figure 86 is formed from the same material as the oxide film 408, the oxide film 408 is formed on the light incident side of the light-shielding film 403, as shown in Figure 87A.

[0459] This embodiment differs from other embodiments in that an oxide film 408 is formed on the photoelectric conversion section 401 side of the light-shielding film 403 of the phase difference detection pixel 361 shown in Figure 87B. The light-shielding film 403 can be provided on the upper or lower side of the oxide film 408 (planarization film). By providing the oxide film 408 on the upper or lower side of the light-shielding film 403 and adjusting the thickness, the reflectance caused by the difference in thickness can be adjusted.

[0460] As shown in Figure 88, a planarization film 511 can also be provided on the photoelectric conversion portion 401 side of the light-shielding film 403. The planarization film 511 is formed between the light-shielding film 403 and the semiconductor substrate 400, and is provided to improve the adhesion between the light-shielding film 403, which is made of metal or the like, and the semiconductor substrate 400. Although it is described as a planarization film 511, it has both a planarization function and an adhesive function. The light-shielding film 403 can be made of, for example, tungsten, and the planarization film 511 can be made of, for example, titanium.

[0461] As shown in Figure 89, a planarization film 521 can also be provided on the photoelectric conversion section 401 side of the light-shielding film 403 and oxide film 408. The planarization film 521 is formed between the light-shielding film 403 and the semiconductor substrate 400 and functions as an anti-reflective film or as a film to prevent deterioration of properties caused by the metal film (light-shielding film 403) coming into close proximity to the semiconductor substrate 400 during processing of the semiconductor substrate 400.

[0462] The light-shielding film 403 may be formed of multiple layers, including a planarization film. The oxide film 408 may be formed as a single layer or as multiple layers.

[0463] <<33. The 32nd Embodiment>> Figure 90 is a diagram illustrating an example of the cross-sectional configuration of the phase difference detection pixel 361 in the 32nd embodiment. The example of the cross-sectional configuration of the phase difference detection pixel 361 shown in Figure 87 is an example of the cross-sectional configuration at line segment A-A' in the example of the planar configuration of the phase difference detection pixel 361 shown in Figure 75.

[0464] As a 32nd embodiment, a configuration is shown to prevent the light-shielding film 403 from becoming a floating metal when the light-shielding film 403 is made of metal. The phase difference detection pixel 361 shown in Figure 90 is equipped with a metal part 531 in the waveguide 405, and the metal part 531 is connected to the light-shielding film 403. The metal part 531 is grounded. By grounding the metal part 531, the light-shielding film 403 connected to the metal part 531 is also grounded, and it is possible to prevent the light-shielding film 403 from becoming a floating metal.

[0465] The phase difference detection pixel 361 shown in Figure 91 has a transparent electrode 541 formed on the photoelectric conversion section 401 side of the light-shielding film 403 and oxide film 408. The transparent electrode 541 is grounded. By grounding the transparent electrode 541, the light-shielding film 403 connected to the transparent electrode 541 is also grounded, preventing the light-shielding film 403 from becoming a floating metal.

[0466] The phase difference detection pixel 361 shown in Figure 92 is configured such that the inter-pixel separation portion 402 and oxide film 408 are formed by a transparent electrode 551, and a light-shielding film 403 is embedded within the transparent electrode 551. The transparent electrode 551 is connected to a power source that applies a predetermined voltage. When a predetermined voltage is applied to the transparent electrode 551 from the power source, the predetermined voltage is applied to the light-shielding film 403 within the transparent electrode 551, preventing the light-shielding film 403 from becoming a floating metal.

[0467] <<34. 33rd Embodiment>> Figure 93 is a diagram illustrating the planar configuration of the phase difference detection pixel 361 in the 33rd embodiment.

[0468] In the 27th to 32nd embodiments, the example described was one in which one photoelectric conversion unit 401 is included in one phase difference detection pixel 361 and one on-chip lens 407 is provided. This technology can also be applied to the phase difference detection pixel 361 in the 33rd embodiment shown in Figure 93.

[0469] Figure 93A shows a configuration in which one phase difference detection pixel 361 is equipped with two photoelectric conversion units 401 and one on-chip lens 407. The phase difference detection pixel 361 shown in Figure 93A includes an inter-pixel separation unit 402 surrounding the photoelectric conversion unit 401 and an inter-pixel separation unit 402 located in the center that divides the photoelectric conversion unit 401 into left and right sections. The inter-pixel separation unit 402 located in the center is not provided in the central region (it is provided in a separated state).

[0470] The photoelectric conversion unit 401 on the left side of the figure is designated as photoelectric conversion unit 401-1, and the photoelectric conversion unit 401 on the right side of the figure is designated as photoelectric conversion unit 401-2. Photoelectric conversion unit 401-2 is covered with a light-shielding film 403. Therefore, the phase difference detection pixel 361 shown as A in Figure 93 functions as a right-side light-shielding pixel.

[0471] In the region where the light-shielding film 403 is provided, there are four intersections of the inter-pixel separation section 402, and therefore four notches 404 are also provided. Notch 404-1 is provided at the upper right intersection in the figure, notch 404-2 is provided at the lower right intersection in the figure, notch 404-3 is provided at the upper center intersection in the figure, and notch 404-4 is provided at the lower center intersection in the figure.

[0472] As described above, notches 404 in the light-shielding film 403 are provided in the region corresponding to the intersection of the inter-pixel separation portion 402, and in Figure 93A, four such notches are provided. This technology can also be applied to a phase difference detection pixel 361 having a photoelectric conversion portion 401 divided into two regions in this way.

[0473] Figure 93B shows a configuration in which one on-chip lens 407 is provided for two 2x1 phase difference detection pixels 361 (photoelectric conversion unit 401). Figure 93B shows a planar configuration example of four 2x2 phase difference detection pixels 361. In the figure, photoelectric conversion unit 401-1 is located in the upper left, photoelectric conversion unit 401-2 is located in the upper right, photoelectric conversion unit 401-3 is located in the lower left, and photoelectric conversion unit 401-4 is located in the lower right.

[0474] A pixel separation unit 402 is positioned to surround the photoelectric conversion units 401-1 to 401-4, and another pixel separation unit 402 is positioned to separate each of the photoelectric conversion units 401-1 to 401-4. In other words, each of the photoelectric conversion units 401-1 to 401-4 is surrounded by a pixel separation unit 402.

[0475] An elliptical on-chip lens 407-1 is positioned on top of photoelectric conversion units 401-1 and 401-2, which are arranged in the left-right direction. An elliptical on-chip lens 407-2 is positioned on top of photoelectric conversion units 401-3 and 401-4, which are arranged in the left-right direction.

[0476] Of the 2x2 4-pixel photoelectric conversion units 401-1 to 401-4, a light-shielding film 403 is placed on the rightmost photoelectric conversion unit 401-2 and the photoelectric conversion unit 401-4, thereby shielding them from light.

[0477] In the region where the light-shielding film 403 is provided, there are six intersections of the inter-pixel separation section 402, and therefore six notches 404 are also provided. Notch 404-1 is provided at the upper right intersection in the figure, notch 404-2 is provided at the center right intersection in the figure, notch 404-3 is provided at the lower right intersection in the figure. Furthermore, notch 404-4 is provided at the upper center intersection in the figure, notch 404-5 is provided at the center intersection in the figure, and notch 404-6 is provided at the lower center intersection in the figure.

[0478] As described above, notches 404 in the light-shielding film 403 are provided in the region corresponding to the intersection of the inter-pixel separation portion 402, and in Figure 93B, there are six such notches. This technology can also be applied to a phase difference detection pixel 361 in which one on-chip lens 407 is arranged for two horizontally adjacent photoelectric conversion units 401, and a light-shielding film 403 is provided for two vertically adjacent photoelectric conversion units 401.

[0479] Figure 93C shows a configuration in which one on-chip lens 407 is provided for four 2x2 phase difference detection pixels 361 (photoelectric conversion unit 401). In the planar configuration example shown in Figure 93C, similar to Figure 93B, the photoelectric conversion unit 401-1 is located in the upper left of the figure, the photoelectric conversion unit 401-2 is located in the upper right of the figure, the photoelectric conversion unit 401-3 is located in the lower left of the figure, and the photoelectric conversion unit 401-4 is located in the lower right of the figure.

[0480] A pixel separation unit 402 is positioned to surround the photoelectric conversion units 401-1 to 401-4, and another pixel separation unit 402 is positioned to separate each of the photoelectric conversion units 401-1 to 401-4. Each of the photoelectric conversion units 401-1 to 401-4 is surrounded by a pixel separation unit 402.

[0481] Of the 2x2 4-pixel photoelectric conversion units 401-1 to 401-4, a light-shielding film 403 is placed on the rightmost photoelectric conversion unit 401-2 and the photoelectric conversion unit 401-4, thereby shielding them from light.

[0482] In the area where the light-shielding film 403 is provided, there are six intersections of the pixel separation portions 402 between pixels, so six notch portions 404 are also provided. A notch portion 404-1 is provided at the upper-right intersection in the figure, a notch portion 404-2 is provided at the right-center intersection in the figure, and a notch portion 404-3 is provided at the lower-right intersection in the figure. Also, a notch portion 404-4 is provided at the upper-center intersection in the figure, a notch portion 404-5 is provided at the center intersection in the figure, and a notch portion 404-6 is provided at the lower-center intersection in the figure.

[0483] Thus, notch portions 404 of the light-shielding film 403 are provided in the area corresponding to the intersections of the pixel separation portions 402 between pixels, and six are provided at C in FIG. 93. One on-chip lens 407 is arranged for four photoelectric conversion portions 401 of 2×2, and this technology can also be applied to the pixel 361 for phase difference detection provided with the light-shielding film 403 for two adjacent photoelectric conversion portions 401 in the vertical direction.

[0484] FIG. 94 is a diagram showing a cross-sectional configuration example of the pixel 361 for phase difference detection at the line segment E-E' of C in FIG. 93. The cross-sectional configuration example of the pixel 361 for phase difference detection shown in FIG. 94 is basically the same as the cross-sectional configuration example shown in FIG. 77, but is different in that the pixel separation portion 402 is also arranged in the center.

[0485] The pixel separation portion 402 arranged in the center corresponds to the intersection, so the notch portion 404-5 of the light-shielding film 403 is located. Also, the pixel separation portion 402 arranged on the right side in the figure also corresponds to the intersection, so the notch portion 404-1 of the light-shielding film 403 is located.

[0486] FIG. 95 is a diagram for explaining other shapes, sizes, etc. of the light-shielding film 403 arranged in the pixel 361 for phase difference detection having the planar configuration example shown in A of FIG. 93.

[0487] The light-shielding film 403 shown in Figure 95A has notches 404-1 to 404-4, as explained with reference to Figure 93A. Each of the notches 404-1 to 404-4 is formed in a rectangular shape. Notches 404-1 and 404-2 are formed to be the same size. Also, notches 404-3 and 404-4 are formed to be the same size.

[0488] The notches 404-1 (404-4) and 404-2 (404-3) are formed to be of different sizes, with notch 404-1 (404-4) being larger than notch 404-2 (404-3). In the light-shielding film 403, the notch 404 located on the right side of the figure and the notch 404 located on the left side of the figure are formed to be of different sizes.

[0489] Figure 95B, like Figure 95A, shows an example of a planar configuration where the notches 404 located on the right side of the figure and the notches 404 located on the left side of the figure are formed to be of different sizes in the light-shielding film 403.

[0490] The notches 404-1 to 404-4 provided in the light-shielding film 403 shown in Figure 95B are each formed in a triangular shape. The triangular notch 404-1 (notch 404-4) is formed in a larger triangular shape than the triangular notch 404-2 (notch 404-3). In the light-shielding film 403, the notch 404 located on the right side of the figure and the notch 404 located on the left side of the figure are formed in different sizes.

[0491] Figure 95C also shows a light-shielding film 403 having notches 404-1 to 404-4, but it differs from the other embodiments in that the light-shielding film 403 is formed to span across (spanning the center) to the adjacent photoelectric conversion unit 401 side. When the light-shielding film 403 is formed to span the center, it also spans the intersection of the inter-pixel separation unit 402 located in the center, and therefore notches 404-3 and 404-4 are located in that region.

[0492] The notches 404-1 to 404-4 shown in Figure 95C are each formed in a rectangular shape. Notches 404-1 and 404-2 are formed to be the same size. Also, notches 404-3 and 404-4 are formed to be the same size.

[0493] The notches 404-1 (404-4) and 404-2 (404-3) are formed to be of different sizes, with notch 404-1 (404-4) being smaller than notch 404-2 (404-3). In the light-shielding film 403, the notch 404 located on the right side of the figure and the notch 404 located on the left side of the figure are formed to be of different sizes.

[0494] Figure 95D, like Figure 95C, shows a planar configuration example where the notches 404 located on the right side of the figure and the notches 404 located on the left side of the figure are formed of different sizes, and the light-shielding film 403 is formed straddling the center.

[0495] The notches 404-1 to 404-4 provided in the light-shielding film 403 shown in Figure 95 D are each formed in a triangular shape. The triangular notches 404-1 (notches 404-4) are formed in a smaller triangular shape than the triangular notches 404-2 (notches 404-3). In the light-shielding film 403, the notches 404 located on the right side of the figure and the notches 404 located on the left side of the figure are formed in different sizes.

[0496] Figure 96 is a diagram illustrating, for example, other shapes and sizes of the light-shielding film 403 that is placed on a phase difference detection pixel 361 having the planar configuration example shown in Figure 93A.

[0497] The light-shielding film 403 shown in Figure 96A has notches 404-1 to 404-4. Each of the notches 404-1 to 404-4 is formed in a triangular shape. Although an example is shown where the notches 404-1 to 404-4 are formed to be the same size, they may be formed to be of different sizes, as explained with reference to Figure 95.

[0498] As shown in Figure 96B, a fan shape can also be adopted for the shape of the notch 404. The notches 404-1 to 404-4 shown in Figure 96B are formed in an arc shape in which a part of the corner of the light-shielding film 403 is recessed inward.

[0499] As shown in Figure 96C, a fan shape can also be adopted for the shape of the notch 404. The notches 404-1 to 404-4 shown in Figure 96C are formed in an arc shape in which a part of the corner of the light-shielding film 403 bulges outwards.

[0500] Figure 97 is a diagram illustrating, for example, other shapes and sizes of the light-shielding film 403 that is placed on a phase difference detection pixel 361 having the planar configuration example shown in Figure 93B.

[0501] The light-shielding film 403 shown in Figure 97A has notches 404-1 to 404-6. Each of the notches 404-1 to 404-6 is formed in a triangular shape.

[0502] As shown in Figure 97B, a fan shape can also be adopted for the shape of the notch 404. The notches 404-1 to 404-6 shown in Figure 97B are formed in an arc shape in which a part of the corner of the light-shielding film 403 is recessed inward. The notches 404-2 and 404-5 located in the center are formed in a semicircular shape.

[0503] As shown in Figure 97C, a fan shape can also be adopted for the shape of the notch 404. The notches 404-1 to 404-6 shown in Figure 97C are formed in an arc shape in which a part of the corner of the light-shielding film 403 bulges outwards.

[0504] Figure 98 is a diagram illustrating, for example, other shapes and sizes of the light-shielding film 403 that is placed on a phase difference detection pixel 361 having the planar configuration example shown in Figure 93C.

[0505] The light-shielding film 403 shown in Figure 98A has notches 404-1 to 404-6. Each of the notches 404-1 to 404-6 is formed in a triangular shape.

[0506] As shown in Figure 98B, a fan shape can also be adopted for the shape of the notch 404. The notches 404-1 to 404-6 shown in Figure 98B are formed in an arc shape in which a part of the corner of the light-shielding film 403 is recessed inward. The notches 404-2 and 404-5 located in the center are formed in a semicircular shape.

[0507] As shown in Figure 98C, a fan shape can also be adopted for the shape of the notch 404. The notches 404-1 to 404-6 shown in Figure 98C are formed in an arc shape in which a part of the corner of the light-shielding film 403 bulges outwards.

[0508] In this way, the light-shielding film 403 is formed in a shape that avoids the region corresponding to the intersection of the pixel separation portion 402.

[0509] <<35. 34th Embodiment>> A description will be given of the case in which pupil correction is applied to a phase difference detection pixel 361 equipped with a light-shielding film 403 having a notch 404. The image height will be described with reference to Figure 99.

[0510] Figure 99 is a plan view of a pixel array 351 having multiple pixels, viewed from a direction perpendicular to the light-receiving surface of the pixel array 351 (hereinafter also referred to as the optical axis direction). In Figure 99, position P11 in the pixel array 333 is the central position on the light-receiving surface of the pixel array 351, that is, the position of the image height center.

[0511] Position P12, located to the left of position P11 in the diagram, is a position away from the center of the image height and is approximately 30% of the image height. Position P13, located to the left of position P12 in the diagram, is a position on the edge of the image height (high image height side), that is, the edge of the light-receiving surface of the pixel array section 351, and here it is assumed to be approximately 80% of the image height.

[0512] It is known that at positions on the light-receiving surface of the image sensor 322 that are far from the image height center, i.e., at high image height positions, the angle of incidence of light incident on the pixel 332 increases, reducing the amount of light incident on the pixel (photoelectric conversion unit 401), and thus reducing pixel sensitivity. In other words, there is a possibility that the characteristics of the image sensor 322 will deteriorate. Therefore, as a correction to suppress such a decrease in pixel sensitivity, an embodiment of pupil correction is described below, in which the position of the on-chip lens 407 and color filter 406 is shifted by a width corresponding to the image height.

[0513] The phase difference detection pixel 361 located at position P11, which is the image height center, has a configuration such as that shown in Figures 75 and 77. At the image height center, the on-chip lens 407, color filter 406, and photoelectric conversion unit 401 are arranged to coincide.

[0514] The phase difference detection pixel 361 located at position P12, which is 30% of the image height, has the configuration shown in Figure 100. The configuration of the phase difference detection pixel 361 shown in Figure 100 is the same as that of the phase difference detection pixel 361 shown in Figures 75 and 77, but the arrangement of the color filter 406 and on-chip lens 407 is different. In Figure 100, a pixel separation unit 402 is located in the center of one phase difference detection pixel 361, and the photoelectric conversion unit 401 is separated.

[0515] Figure 100A shows an example of a planar configuration of the phase difference detection pixel 361 at position P12, and Figure 100B shows an example of a cross-sectional configuration of the phase difference detection pixel 361 at the line segment F-F' in Figure 100A.

[0516] As shown in Figure 100A, the light-shielding film 403 of the phase difference detection pixel 361 located at position P12 is positioned shifted toward the center of the field of view. In the figure, the center of the field of view is on the right side, so the light-shielding film 403 is positioned shifted to the right. The amount of this shift corresponds to the field of view.

[0517] As the light-shielding film 403 shifts, it is also formed in a position where it straddles the inter-pixel separation portion 402. Because the positional relationship between the intersection of the light-shielding film 403 and the inter-pixel separation portion 402 changes, the position of the notch portion 404 is also different from the notch portion 404 of the light-shielding film 403 that is at the center of the image height. As shown in Figure 100A, the notch portion 404 is not at the corner of the light-shielding film 403, but is located at a position shifted to the left in the figure, and is provided in the region that is on the intersection of the inter-pixel separation portion 402.

[0518] As shown in Figure 100B, in the example of the cross-sectional configuration, the on-chip lens 407, color filter 406, and light-shielding film 403 are positioned on the left side of the figure, towards the image height center, with a predetermined amount of displacement between them.

[0519] At the center of the field of view, the on-chip lens 407 and color filter 406 are located above the photoelectric conversion units 401-1 and 401-2. However, the on-chip lens 407 and color filter 406, which are positioned at approximately 30% of the image height, are also partially located above the photoelectric conversion unit 401-3. In other words, in the example shown in Figure 100, the on-chip lens 407 and color filter 406 are positioned to the right.

[0520] The light-shielding film 403 is also positioned to the right, similar to the on-chip lens 407 and the color filter 406, so that a portion of it is positioned on the photoelectric conversion unit 401-3.

[0521] Figure 101 shows an example of the planar configuration and cross-sectional configuration of a phase difference detection pixel 361 located further towards the image height. The phase difference detection pixel 361 located at position P13, which is 80% of the image height, has the configuration shown in Figure 101. Figure 101A shows an example of the planar configuration of the phase difference detection pixel 361 at position P13, and Figure 101B shows an example of the cross-sectional configuration of the phase difference detection pixel 361 at line segment G-G' in Figure 100A.

[0522] As shown in Figure 101A, the light-shielding film 403 of the phase difference detection pixel 361 located at position P13 is positioned further towards the center of the field of view than the light-shielding film 403 located at 30% of the image height as shown in Figure 101A. In the figure, the center of the field of view is on the right, so the light-shielding film 403 is positioned to the right. This amount of displacement is proportional to the field of view and is therefore larger than the amount of displacement applied to the position at 30% of the image height.

[0523] As the light-shielding film 403 shifts, it is also formed in a position where it straddles the inter-pixel separation portion 402. Because the positional relationship between the intersection of the light-shielding film 403 and the inter-pixel separation portion 402 changes, the position of the notch portion 404 is also different from the notch portion 404 of the light-shielding film 403 that is at the center of the image height. As shown in Figure 101A, the notch portion 404 is not at the corner of the light-shielding film 403, but is located further to the left in the figure, in the region that is on the intersection of the inter-pixel separation portion 402.

[0524] As shown in Figure 101B, in the example cross-sectional configuration, the on-chip lens 407, color filter 406, and light-shielding film 403 are positioned on the left side of the figure, towards the center of the image height, shifted by a predetermined amount. This amount of shift is greater than the amount of shift applied to the position at 30% of the image height shown in Figure 100B.

[0525] Thus, when pupil correction is applied, the position of the notch 404 in the light-shielding film 403 also differs depending on the image height, and is provided at a position corresponding to the image height.

[0526] <<36. 35th Embodiment>> Figure 102 is a diagram illustrating the cross-sectional configuration of a phase difference detection pixel 361 in the 35th embodiment.

[0527] In the 27th to 34th embodiments, the case in which the inter-pixel separation portion 402 is provided without penetrating the semiconductor substrate 400 was described as an example. As shown in Figure 102, the inter-pixel separation portion 402' can also be configured to penetrate the semiconductor substrate 400.

[0528] A wiring layer 601 is provided on the side of the semiconductor substrate 400 opposite to the light incident surface. For example, a transfer gate 603 of a transfer transistor is provided on this wiring layer 601. The transfer gate 603 shown in Figure 102 is an example of one that has a vertical gate electrode.

[0529] The pixel separation section 402' is provided penetrating the semiconductor substrate 400 from the lower surface of the oxide film 408 to the upper surface of the wiring layer 601.

[0530] <<37. The 36th Embodiment>> Figures 103 to 105 show examples of cross-sectional configurations of the phase difference detection pixel 361 in the 36th embodiment. The phase difference detection pixel 361 shown in Figures 103 to 105 has the same configuration as the phase difference detection pixel 361 shown in Figure 76, but the configuration of the waveguide 405 is different.

[0531] The waveguide 405 of the phase difference detection pixel 361 shown in Figure 103 is formed of an oxide film 621, with a metal portion 622 provided on a part of the oxide film 621. In the example shown in Figure 103, the metal portion 622 is provided on the lower side of the oxide film 621 in the figure. The metal portion 622 can also be formed to be approximately the same size as the oxide film 621.

[0532] By providing the metal part 622, it is possible to further suppress light leakage to adjacent pixels.

[0533] The waveguide 405 of the phase difference detection pixel 361 shown in Figure 104 is formed of a low refractive index material 631, and a metal portion 632 is provided on a part of the low refractive index material 631. In the example shown in Figure 104, the metal portion 632 is provided on a part of the lower side of the low refractive index material 631 in the figure. The metal portion 632 can also be formed to be approximately the same size as the low refractive index material 631.

[0534] The waveguide 405 of the phase difference detection pixel 361 shown in Figure 105 is formed by a 641 cavity 641.

[0535] The waveguide configuration 405 shown in Figures 103 to 105 can be applied in combination with the phase difference detection pixel 361 in the 27th to 35th embodiments.

[0536] <<38. The 37th Embodiment>> Figures 106 to 108 show examples of cross-sectional configurations of the phase difference detection pixel 361 in the 37th embodiment. The phase difference detection pixel 361 shown in Figures 106 to 108 has the same configuration as the phase difference detection pixel 361 shown in Figure 76, but the configuration of the waveguide 405 is different.

[0537] The waveguide 405 of the phase difference detection pixel 361 shown in Figure 106 is made of the same material as the light-shielding film 403, for example, metal (referred to as metal wall 651). In the example shown in Figure 106, the metal walls 651 are provided at both ends of the color filter 406, and the metal walls 651 provided on the light-shielding film 403 are connected to the light-shielding film 403.

[0538] The waveguide 405 of the phase difference detection pixel 361 shown in Figure 107 is formed of an oxide film 661, and a metal portion 662 is provided on a part of the oxide film 661. In the example shown in Figure 107, the metal portion 662 is provided on both ends of the color filter 406, and the metal portion 662 provided on the light-shielding film 403 is connected to the light-shielding film 403.

[0539] The waveguide 405 of the phase difference detection pixel 361 shown in Figure 108 is formed of a low refractive index material 671, and a metal portion 672 is provided on a part of the low refractive index material 671. In the example shown in Figure 108, the metal portion 672 is provided at both ends of the color filter 406, and the metal portion 672 provided on the light-shielding film 403 is connected to the light-shielding film 403.

[0540] The waveguide configuration 405 shown in Figures 106 to 108 can be applied in combination with the phase difference detection pixel 361 in the 27th to 35th embodiments.

[0541] According to the embodiment described above, it is possible to prevent the material of the light-shielding film 403 from entering the intersection of the inter-pixel separation section 402. This prevents deterioration of characteristics that would occur if the material of the light-shielding film 403 entered the inter-pixel separation section 402. Deterioration of characteristics refers to, for example, the generation of dark current, and according to this technology, it is possible to create a configuration that eliminates the factors that cause dark current to occur.

[0542] <<39. Examples of Application to Electronic Devices>> The light detection device 1 shown in Figure 1 above can be applied to various electronic devices such as imaging devices like digital still cameras and digital video cameras, mobile phones equipped with imaging functions, or other devices equipped with imaging functions.

[0543] Figure 109 is a block diagram showing an example configuration of an imaging device as an electronic device to which this technology is applied.

[0544] The imaging device 1001 shown in Figure 109 comprises an optical system 1002, a shutter device 1003, a solid-state image sensor 1004, a control circuit 1005, a signal processing circuit 1006, a monitor 1007, and a memory 508, and is capable of capturing still images and moving images.

[0545] The optical system 502 is composed of one or more lenses and guides light from the subject (incident light) to the solid-state image sensor 1004, forming an image on the light-receiving surface of the solid-state image sensor 1004.

[0546] The shutter device 1003 is positioned between the optical system 502 and the solid-state image sensor 1004, and controls the light irradiation period and light shielding period for the solid-state image sensor 1004 according to the control of the control circuit 1005.

[0547] The solid-state image sensor 1004 is comprised of a package including the solid-state image sensor described above. The solid-state image sensor 1004 accumulates signal charge for a certain period of time in response to light imaged onto the light-receiving surface via the optical system 1002 and shutter device 1003. The signal charge accumulated in the solid-state image sensor 1004 is transferred according to a drive signal (timing signal) supplied from the control circuit 1005.

[0548] The control circuit 1005 controls the operation of the solid-state image sensor 1004 and the shutter device 1003 by outputting drive signals that control the transfer operation of the solid-state image sensor 1004 and the shutter operation of the shutter device 1003.

[0549] The signal processing circuit 1006 performs various signal processing operations on the signal charge output from the solid-state image sensor 1004. The image (image data) obtained by the signal processing circuit 1006 is supplied to the monitor 1007 for display or supplied to the memory 1008 for storage (recording).

[0550] Even in the imaging device 1001 configured in this way, by applying the light detection device 1 of Figure 1 instead of the solid-state image sensor 1004 described above, it is possible to appropriately acquire phase difference information while improving sensitivity and suppressing oblique color mixing, and furthermore, it becomes possible to suppress the same-color sensitivity difference between pixels adjacent to the phase difference pixels.

[0551] <<40. Example of Use of the Photodetector>> Figure 110 shows an example of use of the photodetector 1 described above.

[0552] The above-described light detection device 1 can be used in various cases for sensing light such as visible light, infrared light, ultraviolet light, and X-rays, for example, as follows.

[0553] - Devices that capture images for viewing purposes, such as digital cameras and portable devices with camera functions. - Devices used for traffic purposes, such as in-vehicle sensors that capture images of the front, rear, surroundings, and interior of a vehicle for safe driving such as automatic stopping and recognition of the driver's condition, surveillance cameras that monitor moving vehicles and roads, and distance measuring sensors that measure distances between vehicles. - Devices used in home appliances such as TVs, refrigerators, and air conditioners that capture user gestures and allow device operation according to those gestures. - Devices used for medical and healthcare purposes, such as endoscopes and devices that perform angiography using infrared light reception. - Devices used for security purposes, such as surveillance cameras for crime prevention and cameras for person recognition. - Devices used for beauty purposes, such as skin measuring devices that capture images of skin and microscopes that capture images of the scalp. - Devices used for sports purposes, such as action cameras and wearable cameras for sports use. - Devices used for agriculture, such as cameras that monitor the condition of fields and crops.

[0554] <<41. Examples of Application to Endoscopic Surgical Systems>> The technology disclosed herein (this technology) can be applied to various products. For example, the technology disclosed herein may be applied to an endoscopic surgical system.

[0555] Figure 111 is a diagram showing an example of a schematic configuration of an endoscopic surgical system to which the technology described herein (the technology) may be applied.

[0556] Figure 111 shows a surgeon (physician) 11131 performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgical system 11000. As shown in the figure, the endoscopic surgical system 11000 consists of an endoscope 11100, other surgical instruments 11110 such as an insufflation tube 11111 and an energy treatment device 11112, a support arm device 11120 for supporting the endoscope 11100, and a cart 11200 equipped with various devices for endoscopic surgery.

[0557] The endoscope 11100 consists of a barrel 11101, the tip of which is inserted into the body cavity of the patient 11132 for a predetermined length, and a camera head 11102 connected to the base end of the barrel 11101. In the illustrated example, the endoscope 11100 is shown as a so-called rigid endoscope having a rigid barrel 11101, but the endoscope 11100 may also be configured as a so-called flexible endoscope having a flexible barrel.

[0558] An opening into which an objective lens is fitted is provided at the tip of the microscope tube 11101. A light source device 11203 is connected to the endoscope 11100, and the light generated by the light source device 11203 is guided to the tip of the microscope tube by a light guide extending inside the microscope tube 11101, and is irradiated through the objective lens towards the object to be observed inside the body cavity of the patient 11132. The endoscope 11100 may be a straight-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0559] The camera head 11102 contains an optical system and an image sensor. Reflected light from the object being observed (observation light) is focused onto the image sensor by the optical system. The image sensor converts the observation light into electrical signals, generating an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. This image signal is transmitted as RAW data to the camera control unit (CCU) 11201.

[0560] The CCU 11201 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), and other components, and comprehensively controls the operation of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102 and performs various image processing operations on that image signal, such as development processing (demosaic processing), to display an image based on that image signal.

[0561] The display device 11202 displays an image based on an image signal that has been processed by the CCU 11201, under control from the CCU 11201.

[0562] The light source device 11203 is composed of a light source such as an LED (light-emitting diode) and supplies illumination light to the endoscope 11100 when photographing the surgical area, etc.

[0563] The input device 11204 is an input interface for the endoscopic surgical system 11000. The user can input various types of information and instructions to the endoscopic surgical system 11000 via the input device 11204. For example, the user can input instructions to change the imaging conditions (type of light, magnification, focal length, etc.) of the endoscope 11100.

[0564] The treatment instrument control device 11205 controls the drive of the energy treatment instrument 11112 for purposes such as tissue cauterization, incision, or blood vessel sealing. The insufflation device 11206 injects gas into the body cavity of the patient 11132 via the insufflation tube 11111 to inflate the body cavity for the purpose of securing a field of view by the endoscope 11100 and securing the operator's workspace. The recorder 11207 is a device capable of recording various information related to the surgery. The printer 11208 is a device capable of printing various information related to the surgery in various formats such as text, images, or graphs.

[0565] The light source device 11203 that supplies illumination light to the endoscope 11100 when photographing the surgical area can be configured as a white light source consisting of, for example, an LED, a laser light source, or a combination thereof. When the white light source is configured as a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so the white balance of the captured image can be adjusted in the light source device 11203. In this case, it is also possible to capture images corresponding to each of the RGB colors in time-division by irradiating the observation target with laser light from each of the RGB laser light sources in time-division and controlling the drive of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter on the image sensor.

[0566] Furthermore, the light source device 11203 may be controlled to change the intensity of the light it outputs at predetermined time intervals. By controlling the drive of the image sensor of the camera head 11102 in synchronization with the timing of the change in light intensity, images can be acquired in time-division order, and these images can be combined to generate high dynamic range images without so-called black crushing and white clipping.

[0567] Furthermore, the light source device 11203 may be configured to supply light in a predetermined wavelength band corresponding to special light observation. In special light observation, for example, by utilizing the wavelength dependence of light absorption in body tissue and irradiating with narrow-band light compared to the irradiation light used during normal observation (i.e., white light), so-called narrow-band imaging is performed to image predetermined tissues such as blood vessels on the surface of mucosa with high contrast. Alternatively, in special light observation, fluorescence observation may be performed to obtain an image from fluorescence generated by irradiation with excitation light. In fluorescence observation, excitation light is irradiated onto body tissue and fluorescence from the body tissue is observed (autofluorescence observation), or a reagent such as indocyanine green (ICG) is injected into body tissue and excitation light corresponding to the fluorescence wavelength of the reagent is irradiated onto the body tissue to obtain a fluorescence image. The light source device 11203 may be configured to supply narrow-band light and / or excitation light corresponding to such special light observation.

[0568] Figure 112 is a block diagram showing an example of the functional configuration of the camera head 11102 and CCU 11201 shown in Figure 111.

[0569] The camera head 11102 includes a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other via a transmission cable 11400 so that they can communicate with each other.

[0570] The lens unit 11401 is an optical system provided at the connection point with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and then incident on the lens unit 11401. The lens unit 11401 is composed of a combination of multiple lenses, including a zoom lens and a focus lens.

[0571] The imaging unit 11402 may consist of one image sensor (a so-called single-chip type) or multiple image sensors (a so-called multi-chip type). If the imaging unit 11402 is configured as a multi-chip type, for example, each image sensor may generate image signals corresponding to RGB, and these may be combined to obtain a color image. Alternatively, the imaging unit 11402 may be configured to have a pair of image sensors for acquiring image signals for the right eye and left eye, respectively, corresponding to 3D (dimensional) display. By performing 3D display, the surgeon 11131 can more accurately grasp the depth of the biological tissue in the surgical area. In addition, if the imaging unit 11402 is configured as a multi-chip type, multiple lens units 11401 may be provided corresponding to each image sensor.

[0572] Furthermore, the imaging unit 11402 does not necessarily have to be located on the camera head 11102. For example, the imaging unit 11402 may be located inside the lens barrel 11101, directly behind the objective lens.

[0573] The drive unit 11403 is composed of actuators and, under control from the camera head control unit 11405, moves the zoom lens and focus lens of the lens unit 11401 along the optical axis by a predetermined distance. This allows the magnification and focus of the image captured by the imaging unit 11402 to be adjusted as appropriate.

[0574] The communication unit 11404 is composed of communication devices for sending and receiving various types of information with the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.

[0575] Furthermore, the communication unit 11404 receives a control signal from the CCU 11201 to control the drive of the camera head 11102 and supplies it to the camera head control unit 11405. The control signal includes information about imaging conditions, such as information to specify the frame rate of the captured image, information to specify the exposure value at the time of imaging, and / or information to specify the magnification and focus of the captured image.

[0576] The imaging conditions such as frame rate, exposure value, magnification, and focus may be specified by the user as appropriate, or they may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the endoscope 11100 is equipped with so-called AE (Auto Exposure), AF (Auto Focus), and AWB (Auto White Balance) functions.

[0577] The camera head control unit 11405 controls the drive of the camera head 11102 based on the control signal received from the CCU 11201 via the communication unit 11404.

[0578] The communication unit 11411 is comprised of a communication device for sending and receiving various types of information with the camera head 11102. The communication unit 11411 receives image signals transmitted from the camera head 11102 via the transmission cable 11400.

[0579] Furthermore, the communication unit 11411 transmits control signals to the camera head 11102 to control the driving of the camera head 11102. Image signals and control signals can be transmitted by telecommunications, optical communications, etc.

[0580] The image processing unit 11412 performs various image processing operations on the image signal, which is RAW data transmitted from the camera head 11102.

[0581] The control unit 11413 performs various controls related to imaging the surgical area, etc., by the endoscope 11100, and the display of the images obtained from imaging the surgical area, etc. For example, the control unit 11413 generates a control signal to control the driving of the camera head 11102.

[0582] Furthermore, the control unit 11413 displays the captured image showing the surgical area, etc., on the display device 11202 based on the image signal processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition technologies. For example, the control unit 11413 can recognize surgical instruments such as forceps, specific biological sites, bleeding, mist when using the energy treatment device 11112, etc., by detecting the shape and color of the edges of objects included in the captured image. When the control unit 11413 displays the captured image on the display device 11202, it may use the recognition results to superimpose various surgical support information onto the image of the surgical area. By superimposing the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced, and the surgeon 11131 can proceed with the surgery reliably.

[0583] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable compatible with electrical signal communication, an optical fiber compatible with optical communication, or a composite cable thereof.

[0584] In the illustrated example, communication was performed via a wired connection using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may be performed wirelessly.

[0585] The above describes an example of an endoscopic surgical system to which the technology of this disclosure may be applied. The technology of this disclosure can be applied to the imaging unit 11402 of the camera head 11102, as described above. Specifically, the light detection device 1 in Figure 1 and the imaging device 310 in Figure 73 can be applied to the imaging unit 11402. By applying the technology of this disclosure to the imaging unit 11402, for example, it is possible to appropriately acquire phase difference information while improving sensitivity and suppressing oblique color mixing, as well as improving phase difference characteristics, and furthermore, it is possible to suppress the same-color sensitivity difference between pixels adjacent to phase difference pixels.

[0586] While an endoscopic surgical system has been described here as an example, the technology described herein may also be applied to other systems, such as microsurgical systems.

[0587] <<42. Examples of Application to Mobile Devices>> The technology relating to this disclosure (this technology) can be applied to various products. For example, the technology relating to this disclosure may be realized as a device mounted on any type of mobile device such as automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobility devices, airplanes, drones, ships, and robots.

[0588] Figure 113 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the technology described herein may be applied.

[0589] The vehicle control system 12000 comprises a plurality of electronic control units connected via a communication network 12001. In the example shown in Figure 113, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. The functional configuration of the integrated control unit 12050 is shown in the figure, which includes a microcomputer 12051, an audio / image output unit 12052, and an in-vehicle network interface 12053.

[0590] The drivetrain control unit 12010 controls the operation of devices related to the vehicle's drivetrain according to various programs. For example, the drivetrain control unit 12010 functions as a control device for a drivetrain generating device that generates driving force for the vehicle, such as an internal combustion engine or a drive motor; a drivetrain transmission mechanism that transmits driving force to the wheels; a steering mechanism that adjusts the steering angle of the vehicle; and a braking device that generates braking force for the vehicle.

[0591] The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window system, or various lamps such as headlights, reverse lights, brake lights, turn signals, or fog lights. In this case, the body system control unit 12020 may receive radio waves transmitted from a portable device that replaces a key or signals from various switches. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock system, power window system, lamps, etc.

[0592] The external information detection unit 12030 detects information from outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the external information detection unit 12030. The external information detection unit 12030 causes the imaging unit 12031 to capture images of the outside of the vehicle and receives the captured images. Based on the received images, the external information detection unit 12030 may perform object detection processing such as detecting people, cars, obstacles, signs, or characters on the road surface, or distance detection processing.

[0593] The imaging unit 12031 is a light sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0594] The in-vehicle information detection unit 12040 detects information inside the vehicle. The in-vehicle information detection unit 12040 is connected to, for example, a driver status detection unit 12041 that detects the driver's state. The driver status detection unit 12041 includes, for example, a camera that captures images of the driver, and the in-vehicle information detection unit 12040 may calculate the driver's level of fatigue or concentration, or determine whether the driver is drowsy, based on the detection information input from the driver status detection unit 12041.

[0595] The microcomputer 12051 can calculate control target values ​​for the drive force generator, steering mechanism, or braking device based on information inside and outside the vehicle acquired by the external information detection unit 12030 or the internal information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing ADAS (Advanced Driver Assistance System) functions, including collision avoidance or impact mitigation, following driving based on distance between vehicles, maintaining vehicle speed, vehicle collision warning, or vehicle lane departure warning.

[0596] Furthermore, the microcomputer 12051 can perform cooperative control for purposes such as autonomous driving, where the vehicle drives autonomously without driver intervention, by controlling the drive force generating device, steering mechanism, or braking device, etc., based on information about the vehicle's surroundings acquired by the external information detection unit 12030 or the internal information detection unit 12040.

[0597] Furthermore, the microcomputer 12051 can output control commands to the body system control unit 12020 based on external information acquired by the external information detection unit 12030. For example, the microcomputer 12051 can control the headlights according to the position of a preceding or oncoming vehicle detected by the external information detection unit 12030, and perform coordinated control aimed at reducing glare, such as switching from high beams to low beams.

[0598] The audio-image output unit 12052 transmits at least one of audio and image output signals to an output device capable of visually or audibly notifying information to the vehicle's occupants or to those outside the vehicle. In the example shown in Figure 113, the output devices include an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an onboard display and a head-up display.

[0599] Figure 114 shows an example of the installation position of the imaging unit 12031.

[0600] In Figure 114, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0601] The imaging units 12101, 12102, 12103, 12104, and 12105 are installed, for example, on the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield inside the vehicle 12100. The imaging unit 12101 installed on the front nose and the imaging unit 12105 installed on the upper part of the windshield inside the vehicle mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 installed on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 installed on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 installed on the upper part of the windshield inside the vehicle is mainly used for detecting preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, or lanes.

[0602] Figure 114 shows an example of the imaging range of imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of imaging unit 12101 located on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of imaging units 12102 and 12103 located on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of imaging unit 12104 located on the rear bumper or back door. For example, by superimposing the image data captured by imaging units 12101 to 12104, an overhead view image of the vehicle 12100 can be obtained.

[0603] At least one of the imaging units 12101 to 12104 may have a function for acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera consisting of multiple image sensors, or an image sensor having pixels for phase difference detection.

[0604] For example, the microcomputer 12051, based on distance information obtained from the imaging units 12101 to 12104, can determine the distance to each object within the imaging range 12111 to 12114 and the temporal change of this distance (relative speed to the vehicle 12100). In particular, it can extract the closest object on the vehicle 12100's path that is traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or more) as the preceding vehicle. Furthermore, the microcomputer 12051 can set a predetermined distance to be maintained before the preceding vehicle and perform automatic braking control (including follow-and-stop control) and automatic acceleration control (including follow-and-start control), etc. In this way, cooperative control aimed at autonomous driving, where the vehicle drives autonomously without driver intervention, can be performed.

[0605] For example, the microcomputer 12051 can use distance information obtained from imaging units 12101 to 12104 to classify and extract three-dimensional object data related to three-dimensional objects, such as motorcycles, passenger cars, large vehicles, pedestrians, utility poles, and other three-dimensional objects, and use this data for automatic obstacle avoidance. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the degree of risk of collision with each obstacle. If the collision risk is above a set value and there is a possibility of collision, the microcomputer 12051 can provide driving assistance to avoid collisions by outputting a warning to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or evasive steering via the drive system control unit 12010.

[0606] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared light. For example, the microcomputer 12051 can recognize pedestrians by determining whether or not pedestrians are present in the images captured by the imaging units 12101 to 12104. Such pedestrian recognition is performed, for example, by a procedure to extract feature points from the images captured by the imaging units 12101 to 12104 as infrared cameras, and a procedure to perform pattern matching on a series of feature points that indicate the contour of an object to determine whether or not it is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the imaging units 12101 to 12104 and recognizes a pedestrian, the audio-image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio-image output unit 12052 may also control the display unit 12062 to display an icon indicating a pedestrian at a desired position.

[0607] The above describes an example of a vehicle control system to which the technology described herein may be applied. The technology described herein can be applied to the imaging unit 12031 of the configuration described above. Specifically, the light detection device 1 in Figure 1 and the imaging device 310 in Figure 73 can be applied to the imaging unit 12031. By applying the technology described herein to the imaging unit 12031, for example, it is possible to appropriately acquire phase difference information while improving sensitivity and suppressing oblique color mixing, as well as improving phase difference characteristics, and furthermore, it is possible to suppress the same-color sensitivity difference between pixels adjacent to phase difference pixels.

[0608] The embodiments described herein are not limited to those described above, and various modifications are possible without departing from the spirit of this disclosure. For example, the embodiments described above may be implemented individually or in combination with multiple embodiments. Specifically, for example, a given embodiment may be combined with another embodiment different from the given embodiment. Furthermore, the effects described herein are merely illustrative and not limiting, and other effects may also occur.

[0609] In this specification, "system" refers to an entire apparatus composed of multiple devices.

[0610] Furthermore, the effects described herein are merely illustrative and not limiting, and other effects may also occur.

[0611] Furthermore, the embodiments of this technology are not limited to those described above, and various modifications are possible without departing from the spirit of this technology.

[0612] Furthermore, this disclosure can also be structured as follows:

[0613] <1> A light detection device comprising: a phase difference pixel having a light-shielding film for detecting a phase difference; a normal pixel; and a reflective wall having a refractive index lower than a predetermined refractive index between the color filter for each pixel including the phase difference pixel and the normal pixel, wherein when the direction of incidence of light to the pixel is from top to bottom, the end of the light-shielding film is formed to tuck into the lower part of the reflective wall. <2> The light detection device according to <1>, wherein a wall base film, which is a base film for the reflective wall, is formed on the lower part of the reflective wall, and a part of the wall base film is formed to ride on the upper part of the end of the light-shielding film. <3> The light detection device according to <1>, wherein the reflective wall adjacent to the phase difference pixel is formed to be thicker than the other reflective walls. <4> The light detection device according to <3>, wherein the reflective wall adjacent to the phase difference pixel is formed to be thicker than the other reflective walls so as to protrude toward the phase difference pixel. <5> The light detection device according to <1>, further comprising a photoelectric conversion unit that generates a pixel signal corresponding to the amount of incident light, and a planarization film provided between the photoelectric conversion unit and the color filter, wherein the light-shielding film is formed on the planarization film. <6> The light detection device according to <1>, further comprising a photoelectric conversion unit that generates a pixel signal corresponding to the amount of incident light, and a planarization film provided between the photoelectric conversion unit and the color filter, wherein the light-shielding film is formed within the planarization film. <7> The light detection device according to <1>, further comprising a photoelectric conversion unit that generates a pixel signal corresponding to the amount of incident light, and a planarization film provided between the photoelectric conversion unit and the color filter, wherein the light-shielding film is formed beneath the planarization film. <9> The light-shielding film is composed of at least one layer of tungsten W, titanium Ti, and titanium nitride TiN, as described in <1>. <10> The base film for the wall is composed of at least one layer of tungsten W, titanium Ti, and titanium nitride TiN, as described in <2>. <11> The reflective wall is composed of fine particles of silicon dioxide SiO2, as described in <1>.<12> The reflective wall is surrounded by a protective film, the light detection device according to <1>. <13> The reflective wall surrounded by the protective film is made of fine silicon dioxide (SiO2) particles or Air, the light detection device according to <12>. <14> The layer made up of the color filter and the reflective wall is made up of at least one layer, the light detection device according to <1>. <15> The light detection device according to <1>, further comprising a light-shielding pixel whose entire surface is light-shielded, wherein the light-shielding film in the phase difference pixel is the same thickness as the light-shielding film constituting the light-shielding pixel. <16> An imaging device having a light detection device comprising a phase difference pixel having a light-shielding film for detecting a phase difference, a normal pixel, and a reflective wall having a refractive index lower than a predetermined refractive index between the color filter for each pixel including the phase difference pixel and the normal pixel, wherein when the direction of incidence of light incident on the pixel is from top to bottom, the end of the light-shielding film is formed to tuck into the lower part of the reflective wall. <17> An electronic device having a light detection device comprising: a phase difference pixel having a light-shielding film for detecting a phase difference; a normal pixel; and a reflective wall having a refractive index lower than a predetermined refractive index between the color filter for each pixel including the phase difference pixel and the normal pixel, wherein when the direction of incidence of light incident on the pixel is from top to bottom, the end of the light-shielding film is formed to tuck into the lower part of the reflective wall. <18> An electronic device comprising: an OCL (On Chip Lens); a pixel unit consisting of at least one pixel; and a light-shielding film configured on the outer periphery where the pixel unit is arranged, wherein the light-shielding film is configured between a first intersection where inter-pixel separation structures that separate the pixels intersect and a second intersection adjacent to the first intersection within the range of the outer periphery where the pixel unit is configured. <19> The light detection device according to <18>, wherein the light-shielding film is continuously configured within the range of the outer periphery where the pixel unit is configured, and an unapplied area of ​​the light-shielding film is configured at the intersection where the inter-pixel separation structures intersect. <20> The unconstructed area is larger than the trench width in which the inter-pixel separation structure is formed, or the cavity diameter of the seam in which the structure is assumed to be formed. The light detection device as described in <19>.<21> The light-shielding film is composed of at least one layer of tungsten W, titanium Ti, and titanium nitride TiN, as described in <18>. <22> The light-shielding film is tapered when viewed from a direction perpendicular to the direction of incident light, as described in <18>. <23> The light-shielding film is formed as a plurality of fragmentary components so as not to be formed at intersections where the inter-pixel isolation structures intersect, as described in <18>. <24> The inter-pixel isolation structure is RDTI (Reversed Deep Trench Isolation), as described in <18>. <25> The inter-pixel isolation structure is an electrode structure formed in a trench, as described in <24>. <26> The inter-pixel isolation structure is FFTI (Front Full Trench Isolation), as described in <18>. <27> The photodetector according to <18>, further comprising a color filter separation section above the inter-pixel separation structure in the opposite direction to the direction of light incidence, which separates color filters corresponding to the wavelength band of the incident light of the pixels. <28> The photodetector according to <27>, wherein the color filter separation section is a reflective wall with a refractive index lower than a predetermined refractive index. <29> The photodetector according to <28>, wherein the reflective wall is composed of fine silicon dioxide SiO2 particles. <30> The photodetector according to <28>, wherein the reflective wall is surrounded by a protective film. <31> The photodetector according to <30>, wherein the reflective wall surrounded by the protective film is composed of fine silicon dioxide SiO2 particles or air holes. <32> The photodetector according to <27>, wherein the color filter separation section is composed of an oxide film. <33> The photodetector according to <32>, wherein the inside of the oxide film constituting the color filter separation section is hollow. <34> The light detection device according to <27>, wherein the color filter separation unit is connected to the light-shielding film. <35> The light detection device according to <18>, wherein the pixel unit is composed of one of the pixels. <36> The light detection device according to <18>, wherein the pixel unit is composed of one x two or two x two of the pixels.<37> The light detection device according to <18>, wherein the pixel unit includes a phase difference pixel. <38> In a pixel region where the pixels are arranged in an array, the pixel unit is configured such that, by pupil correction according to the distance from the center position of the pixel region, the intersections where the inter-pixel separation structures intersect in the outer peripheral region in which the pixel unit is formed become smaller as the distance from the pixel region increases, and the area in which the light-shielding film is arranged becomes larger. <39> An electronic device comprising an OCL (On Chip Lens), a pixel unit consisting of at least one pixel, and a light-shielding film configured in the outer peripheral region in which the pixel unit is arranged, wherein the light-shielding film is configured between a first intersection where inter-pixel separation structures separating the pixels intersect and a second intersection adjacent to the first intersection in the outer peripheral region in which the pixel unit is formed. <40> An imaging device comprising: an identical OCL (On Chip Lens); a pixel unit consisting of at least one pixel; and a light-shielding film formed on the outer periphery where the pixel unit is arranged, wherein the light-shielding film is formed in a range of the outer periphery where the pixel unit is arranged, excluding a first intersection where inter-pixel separation structures separating the pixels intersect, and a second intersection adjacent to the first intersection. <41> A photodetector comprising: a pixel including a photoelectric conversion unit; an inter-pixel separation unit surrounding the pixel; and a light-shielding film provided on a part of the light incident surface side of the pixel, wherein, in a plan view, a notch in the light-shielding film is provided at the intersection where the inter-pixel separation units intersect. <42> The photodetector according to <41>, wherein the notch is polygonal or fan-shaped. <43> The photodetector according to <41>, wherein the notch is a tapered region of the light-shielding film. <44> The photodetector element according to any one of <41> to <43>, wherein the notch is 1.5 to 2.0 times the width of the inter-pixel separation portion. <45> The photodetector element according to any one of <41> to <44>, wherein the inter-pixel separation portion is also provided in the center that divides the photoelectric conversion portion within the pixel, and the notch is also provided in the intersection portion in the center.<46> The light-shielding film is arranged across a plurality of adjacent photoelectric conversion sections, and the notch is also provided at the intersection of the inter-pixel separation section across which the light-shielding film is arranged. This is the photodetector element according to any one of <41> to <45>. <47> The light-shielding film is arranged at a position corresponding to the amount of pupil correction shift, and as a result of being arranged at a shifted position, the notch is provided in a region located on the intersection. This is the photodetector element according to any one of <41> to <46>. <48> The notch is provided with an oxide film. This is the photodetector element according to any one of <41> to <47>. <49> The inter-pixel separation section has a cavity inside. This is the photodetector element according to any one of <41> to <48>. <51> The photodetector element according to any one of <41> to <49> that detects a phase difference by treating a first pixel having the light-shielding film on the left side and a second pixel having the light-shielding film on the right side as a pair. <51> An electronic device comprising: a pixel including a photoelectric conversion unit; an inter-pixel separation unit surrounding the pixel; a light-shielding film provided on a part of the light incident surface side of the pixel, wherein in a plan view, a notch in the light-shielding film is provided at the intersection where the inter-pixel separation units intersect; and a processing unit for processing signals from the photodetector. <52> An electronic device comprising: a pixel including a photoelectric conversion unit; an inter-pixel separation unit surrounding the pixel; a light-shielding film provided on a part of the light incident surface side of the pixel; and an oxide film on the photoelectric conversion unit on the light incident surface side of the pixel, wherein the oxide film is provided at the intersection where the inter-pixel separation units intersect, and the light-shielding film is provided at the non-intersection where the inter-pixel separation units do not intersect. <53> The photodetector according to <52>, wherein in a plan view, the shape of the oxide film provided at the intersection is polygonal or fan-shaped. <54> The photodetector element according to <52>, wherein in a cross-sectional view, the light-shielding film has a tapered shape at least at the end closest to the inter-pixel separation portion. <55> The photodetector element according to any one of <52> to <54>, wherein a first pixel having the light-shielding film on the left side and a second pixel having the light-shielding film on the right side are used as a pair to detect a phase difference.<56> An electronic device comprising: a pixel including a photoelectric conversion unit; an inter-pixel separation unit surrounding the pixel; a light-shielding film provided on a part of the light incident surface side of the pixel; an oxide film on the photoelectric conversion unit on the light incident surface side of the pixel, wherein the oxide film is provided at the intersections where the inter-pixel separation units intersect, and the light-shielding film is provided at the non-intersections where the inter-pixel separation units do not intersect; and a processing unit for processing signals from the photodetector.

[0614] 1. Photodetector, 13, 13A-13Y pixels (normal pixels), 13s, 13As-13Ys phase difference pixels, 13Yb light-shielding pixel, 13u pixel unit, 31, 31', 31A-31Z pixel structure, 51 lens (OCL), 52 waveguide, 53 wall base film, 54 planarization film, 55 CF, 56 first semiconductor region, 57 second semiconductor region, 58 light-shielding film, 61 medium, 101, 101' metal layer, 111 resist, 121, 121' metal layer, 131 resist, 151 base film layer, 161, 161' waveguide layer, 171, 171' resist, 191 OCL, 192 CF, 211, 211' Seam, 231, 231A-231C Unprocessed area, 251 Substrate, 252, 252' Trench, 310 Imaging device, 321 Lens group, 322 Image sensor, 323 DSP circuit, 324 Frame memory, 325 Display unit, 326 Recording unit, 327 Operation unit, 328 Power supply unit, 329 Bus line, 332 Pixel, 333 Pixel array unit, 351 Pixel array unit, 361 Pixel for phase difference detection, 362 Pixel for phase difference detection, 371 Normal pixel, 400 Semiconductor substrate, 401 Photoelectric conversion unit, 402 Inter-pixel separation unit, 403 Light-shielding film, 404 Notch, 405 Waveguide, 406 Color filter, 407 On-chip lens, 408 Oxide film, 411 Cavity, 501 Planarization film, 511 Planarization film, 521 Planarization film, 531 Metal part, 541 Transparent electrode, 551 Transparent electrode, 601 Wiring layer, 603 Transfer gate, 621 Oxide film, 622 Metal part, 631 Low refractive index material, 632 Metal part, 641 Cavity, 651 Metal wall, 661 Oxide film, 662 Metal part, 671 Low refractive index material, 672 Metal part

Claims

1. A light detection device comprising: a phase difference pixel having a light-shielding film for detecting a phase difference; a normal pixel; and a reflective wall having a refractive index lower than a predetermined refractive index between the color filter for each pixel including the phase difference pixel and the normal pixel, wherein when the direction of incidence of light to the pixel is from top to bottom, the end of the light-shielding film is formed to tuck into the lower part of the reflective wall.

2. The light detection device according to claim 1, wherein a wall base film, which is a base film for the reflective wall, is formed on the lower part of the reflective wall, and a part of the wall base film is formed to overlap the upper part of the end of the light-shielding film.

3. The photodetector according to claim 1, wherein the reflective wall adjacent to the phase difference pixel is formed to be thicker than the other reflective walls.

4. The photodetector according to claim 3, wherein the reflective wall adjacent to the phase difference pixel is formed thicker than the other reflective walls so as to protrude toward the phase difference pixel.

5. The light detection device according to claim 1, further comprising: a photoelectric conversion unit that generates a pixel signal corresponding to the amount of incident light; and a planarization film provided between the photoelectric conversion unit and the color filter, wherein the light-shielding film is formed on the planarization film.

6. The light detection device according to claim 1, further comprising: a photoelectric conversion unit that generates a pixel signal corresponding to the amount of incident light; and a planarization film provided between the photoelectric conversion unit and the color filter, wherein the light-shielding film is formed within the planarization film.

7. The light detection device according to claim 1, wherein a light-shielding film different from the light-shielding film in the phase difference pixels is formed on the lower part of the reflective wall between the normal pixels.

8. The photodetector according to claim 1, further comprising: a photoelectric conversion unit that generates a pixel signal corresponding to the amount of incident light; and a planarization film provided between the photoelectric conversion unit and the color filter, wherein the light-shielding film is formed beneath the planarization film.

9. The photodetector according to claim 1, wherein the light-shielding film is composed of at least one layer of tungsten W, titanium Ti, and titanium nitride TiN.

10. The photodetector according to claim 2, wherein the wall base film is composed of at least one layer of tungsten W, titanium Ti, and titanium nitride TiN.

11. The photodetector according to claim 1, wherein the reflective wall is composed of fine particles of silicon dioxide (SiO2).

12. The light detection device according to claim 1, wherein the reflective wall is covered with a protective film.

13. The photodetector according to claim 12, wherein the reflective wall, which is surrounded by the protective film, is composed of silicon dioxide (SiO2) fine particles or air pores.

14. The light detection device according to claim 1, wherein at least one layer is formed from the color filter and the reflective wall.

15. The light detection device according to claim 1, further comprising a light-shielding pixel whose entire surface is light-shielded, wherein the light-shielding film in the phase-difference pixel has the same thickness as the light-shielding film constituting the light-shielding pixel.

16. An imaging apparatus having a light detection device comprising: a phase difference pixel having a light-shielding film for detecting a phase difference; a normal pixel; and a reflective wall having a refractive index lower than a predetermined refractive index between the color filter for each pixel including the phase difference pixel and the normal pixel, wherein when the direction of incidence of light to the pixel is from top to bottom, the end of the light-shielding film is formed to tuck into the lower part of the reflective wall.

17. An electronic device having a light detection device comprising: a phase difference pixel having a light-shielding film for detecting a phase difference; a normal pixel; and a reflective wall having a refractive index lower than a predetermined refractive index between the color filter for each pixel including the phase difference pixel and the normal pixel, wherein when the direction of incidence of light to the pixel is from top to bottom, the end of the light-shielding film is formed to tuck into the lower part of the reflective wall.

18. A light detection device comprising an OCL (On Chip Lens), a pixel unit consisting of at least one pixel, and a light-shielding film formed on the outer periphery where the pixel unit is arranged, wherein the light-shielding film is formed between a first intersection where inter-pixel separation structures separating the pixels intersect, and a second intersection adjacent to the first intersection, within the range of the outer periphery where the pixel unit is formed.

19. The light-shielding film is continuously formed over the outer periphery in which the pixel unit is formed, and an unapplied area of ​​the light-shielding film is formed at the intersection where the inter-pixel separation structures intersect.

20. The light detection device according to claim 19, wherein the unconstructed area is larger than the trench width in which the inter-pixel separation structure is formed, or the cavity diameter of the seam in which the structure is assumed to be formed.

21. The photodetector according to claim 18, wherein the light-shielding film is composed of at least one layer of tungsten W, titanium Ti, and titanium nitride TiN.

22. The light-shielding film has a tapered shape when viewed from a direction perpendicular to the direction of light incidence, as described in claim 18.

23. The light-shielding film is configured in multiple fragmentary parts so as not to be formed at the intersections where the inter-pixel separation structures intersect, as described in claim 18.

24. The photodetector according to claim 18, wherein the inter-pixel isolation structure is RDTI (Reversed Deep Trench Isolation).

25. The photodetector according to claim 24, wherein the inter-pixel separation structure is an electrode structure formed in a trench.

26. The photodetector according to claim 18, wherein the inter-pixel isolation structure is FFTI (Front Full Trench Isolation).

27. The light detection device according to claim 18, further comprising a color filter separation section above the inter-pixel separation structure in the opposite direction to the direction of light incidence, which separates color filters corresponding to the wavelength band to be transmitted from the incident light incident on the pixels.

28. The light detection device according to claim 27, wherein the color filter separation section is a reflective wall with a refractive index lower than a predetermined refractive index.

29. The photodetector according to claim 28, wherein the reflective wall is composed of fine particles of silicon dioxide (SiO2).

30. The light detection device according to claim 28, wherein the reflective wall is surrounded by a protective film.

31. The photodetector according to claim 30, wherein the reflective wall, which is surrounded by the protective film, is composed of fine particles of silicon dioxide (SiO2) or air pores.

32. The photodetector according to claim 27, wherein the color filter separation section is composed of an oxide film.

33. The photodetector according to claim 32, wherein the oxide film constituting the color filter separation section is hollow.

34. The light detection device according to claim 27, wherein the color filter separation unit is connected to the light-shielding film.

35. The light detection device according to claim 18, wherein the pixel unit is composed of one pixel.

36. The light detection device according to claim 18, wherein the pixel unit is composed of 1 x 2 or 2 x 2 pixels.

37. The photodetector according to claim 18, wherein the pixel unit includes a phase difference pixel.

38. In a pixel region in which the pixels are arranged in an array, the pixel unit is corrected by pupil correction according to the distance from the center position of the pixel region, so that the intersection where the inter-pixel separation structures intersect in the outer peripheral area in which the pixel unit is formed becomes smaller as the distance from the pixel region increases, and the area in which the light-shielding film is arranged increases, as described in claim 18.

39. An electronic device comprising an OCL (On Chip Lens), a pixel unit consisting of at least one pixel, and a light-shielding film formed on the outer periphery where the pixel unit is arranged, wherein the light-shielding film is formed between a first intersection where inter-pixel separation structures separating the pixels intersect, and a second intersection adjacent to the first intersection, within the range of the outer periphery where the pixel unit is formed.

40. An imaging device comprising an OCL (On Chip Lens), a pixel unit consisting of at least one pixel, and a light-shielding film formed on the outer periphery where the pixel unit is arranged, wherein the light-shielding film is formed between a first intersection where inter-pixel separation structures separating the pixels intersect, and a second intersection adjacent to the first intersection, within the range of the outer periphery where the pixel unit is formed.

Images