Substrate processing apparatus and method for inspecting substrate processing apparatus

Abstract

This substrate processing device has a chamber, a plurality of units, and a host controller. The chamber is disposed in a central region in the height direction of the substrate processing apparatus. The plurality of units are disposed above and below the chamber, and are each configured to include a controller which can perform inspection on the corresponding unit before the unit is incorporated into the substrate processing apparatus. The host controller is configured to manage the controllers of the plurality of units after the plurality of units have been incorporated in the substrate processing apparatus and assembled as the substrate processing apparatus. In addition, the controllers of the plurality of units can perform inspection on the respective units after the units have been assembled as the substrate processing device. Furthermore, after the assembly as the substrate processing device, the host controller can perform inspection on the substrate processing device.

Description

Substrate Processing Apparatus and Inspection Method for Substrate Processing Apparatus

[0001] The present disclosure relates to a substrate processing apparatus and an inspection method for a substrate processing apparatus.

[0002] Patent Document 1 discloses “a semiconductor manufacturing apparatus including a loader module that accommodates, aligns, and transports a processing target, and independent control means for operating the loader module without connecting the loader module to a process ship.”

[0003] Patent Document 2 discloses “a unit control panel provided in at least one unit of a substrate processing apparatus that performs processing on a substrate while transferring the substrate between a plurality of assembled units, the unit control panel being provided in a state where the unit provided with the unit control panel is not assembled with other units, and including a test control unit that performs a substrate transfer test in the unit using a substrate stage installed outside the unit.”[[ID=IO]]

[0004] U.S. Patent Application Publication No. 2004 / 0092069, U.S. Patent Application Publication No. 2015 / 0071742

[0005] The present disclosure provides a substrate processing apparatus and an inspection method for a substrate processing apparatus that can inspect the functions of each unit even in the middle of device assembly.

[0006] A substrate processing apparatus according to one aspect of the present disclosure includes a chamber, a plurality of units, and an upper control unit. The chamber is disposed in a central region in the height direction of the substrate processing apparatus. The plurality of units are disposed above and below the chamber and are configured to each include a control unit capable of inspecting itself for each unit before being incorporated into the substrate processing apparatus. The upper control unit is configured to overall control the control units of the plurality of units after the plurality of units are incorporated into the substrate processing apparatus and assembled as the substrate processing apparatus. Also, each of the control units of the plurality of units can inspect itself for each unit after being assembled as the substrate processing apparatus. Further, the upper control unit can be inspected as the substrate processing apparatus after being assembled as the substrate processing apparatus.

[0007] According to this disclosure, functional testing can be performed on each unit even during the assembly process of the device.

[0008] Figure 1 is a diagram showing an example of a plasma processing system in one embodiment of the present disclosure. Figure 2 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus in this embodiment. Figure 3 is a diagram showing an example of the unit configuration of a plasma processing apparatus in this embodiment. Figure 4 is a diagram showing an example of each unit in this embodiment. Figure 5 is a block diagram showing an example of the connection of each unit in this embodiment. Figure 6 is a diagram showing an example of the hierarchical structure of each unit. Figure 7 is a diagram showing an example of the connection structure between units in this embodiment. Figure 8 is a diagram showing an example of the connection structure between units in this embodiment. Figure 9 is a flowchart showing an example of an inspection method in this embodiment.

[0009] The following describes in detail, with reference to the drawings, embodiments of the disclosed substrate processing apparatus and inspection method for the substrate processing apparatus. However, the disclosed technology is not limited to the embodiments described below.

[0010] Conventional circuit board processing equipment assembles components (units) individually, but some units lack a control unit. In such cases, adjustment and inspection cannot be performed on the unit alone. Adjustment and inspection must be carried out using separately prepared test equipment, or the entire device must be assembled and then connected to power equipment for adjustment and inspection. This can lead to lengthy adjustment and inspection processes, and if a malfunction is discovered, the investigation of the faulty part and replacement of parts may occur in the later stages of the assembly process. Therefore, it is desirable to be able to perform functional inspections on each unit even during the assembly process.

[0011] [Configuration of Plasma Processing System] The following describes an example of the configuration of a plasma processing system. Figure 1 is a diagram showing an example of a plasma processing system in one embodiment of the present disclosure. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20, which will be described later, and the gas outlet is connected to an exhaust system 40, which will be described later. The substrate support unit 11 is arranged in the plasma processing space and has a substrate support surface for supporting a substrate.

[0012] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR (Electron Cyclotron Resonance) plasma, helicon wave excited plasma (HWP), or surface wave plasma (SWP), etc. Various types of plasma generation units, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units, may also be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0013] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control the elements of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 is implemented, for example, by a computer 2a. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The functions realized by the processing unit 2a1 described herein may be implemented in a circuit or processing circuit, including a general-purpose processor, an application-specific processor, integrated circuits, ASICs (Application Specific Integrated Circuits), a CPU (Central Processing Unit), a conventional circuit, and / or a combination thereof, programmed to realize the described functions. The processor is considered to be a circuit or processing circuit, including transistors and other circuits. The processor may be a programmed processor that executes a program stored in the storage unit 2a2. This program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).In this disclosure, circuits, units, and means are hardware programmed to perform or configured to perform the functions described. Such hardware may be any hardware described in this disclosure, or any hardware known to be programmed to perform or execute the functions described. If such hardware is a processor that is considered to be a type of circuit, such circuit, means, or unit is a combination of hardware and software used to constitute such hardware and / or processor.

[0014] The following describes an example configuration of a capacitively coupled plasma processing apparatus as an example of a plasma processing apparatus 1. Figure 2 is a schematic cross-sectional view showing an example configuration of the plasma processing apparatus in this embodiment.

[0015] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply system 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is located inside the plasma processing chamber 10. The shower head 13 is located above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a part of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side walls 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10. Note that the plasma processing chamber 10 is an example of a vacuum chamber.

[0016] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is placed on the central region 111a of the main body portion 111, and the ring assembly 112 is placed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also called the substrate support surface for supporting the substrate W, and the annular region 111b is also called the ring support surface for supporting the ring assembly 112.

[0017] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is placed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic chuck electrode 1111b placed within the ceramic member 1111a. The electrostatic chuck electrode 1111b is also called a clamping electrode. In one embodiment, the electrostatic chuck electrode 1111b is electrically connected or coupled to a chuck power supply. The chuck power supply may be a DC power supply or an AC power supply. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Furthermore, other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have an annular region 111b. In this case, the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or it may be placed on both the electrostatic chuck 1111 and the annular insulating member. In addition, at least one bias electrode, which is electrically connected or coupled to the power supply 31 and / or power supply 32 described later, may be placed inside the ceramic member 1111a. In this case, at least one bias electrode functions as a lower electrode. Also, the conductive member of the base 1110 and the bias electrode inside the ceramic member 1111a may function as multiple lower electrodes. In one embodiment, the first voltage generation unit 32a, which functions as a voltage pulse generation unit described later, is electrically connected or coupled to the bias electrode inside the ceramic member 1111a, and the first RF generation unit 31a, described later, is electrically connected or coupled to the conductive member of the base 1110. Furthermore, the electrostatic chuck electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0018] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one covering ring. The edge rings are formed of a conductive or insulating material, and the covering rings are formed of an insulating material.

[0019] The substrate support section 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed within the base 1110, and one or more heaters are arranged within the ceramic member 1111a of the electrostatic chuck 1111. The substrate support section 11 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0020] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through the plurality of gas inlet ports 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0021] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas to the shower head 13 from a corresponding gas source 21 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of at least one processing gas.

[0022] The power supply system 30 includes a power supply 31 that is electrically connected to or coupled to the plasma processing chamber 10. In one embodiment, the power supply 31 is electrically connected to or coupled to the plasma processing chamber 10 via at least one impedance matcher. The impedance matcher may be a mechanically controlled matcher or an electronically controlled matcher. The power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the power supply 31 can function as at least part of the plasma generation unit 12. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ionic components in the formed plasma can be drawn into the substrate W.

[0023] The power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode and is configured to generate a source RF signal (source RF power) to generate plasma in the plasma processing space 10s. In one embodiment, the first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matcher. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. One or more generated source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0024] The second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode and is configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode via at least one impedance matcher. When the first RF generation unit 31a is electrically connected to or coupled to a lower electrode, the second RF generation unit 31b may be electrically connected to or coupled to the same lower electrode, or it may be electrically connected to or coupled to a different lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0025] The power supply system 30 may also include a power supply 32 that is electrically connected to or coupled to the plasma processing chamber 10. The power supply 32 includes a first voltage generation unit 32a and a second voltage generation unit 32b. In one embodiment, the first voltage generation unit 32a is electrically connected to or coupled to at least one lower electrode and is configured to generate a first voltage signal. The generated first voltage signal is applied to at least one lower electrode. In one embodiment, the second voltage generation unit 32b is electrically connected to or coupled to at least one upper electrode and is configured to generate a second voltage signal. The generated second voltage signal is applied to at least one upper electrode.

[0026] In various embodiments, the first and / or second voltage signals may be pulsed. In this case, the first voltage generation unit 32a and / or the second voltage generation unit 32b function as voltage pulse generation units configured to generate a sequence of voltage pulses. Thus, the sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. In one embodiment, the sequence of voltage pulses has a plurality of cycles, each cycle including a burst of voltage pulses in a first period and a constant reference voltage in a second period. That is, in the sequence of voltage pulses, the burst of voltage pulses is repeated. The absolute value of the voltage level of the voltage pulse is greater than the absolute value of the voltage level of the reference voltage. The voltage pulse may have an arbitrary waveform having a rectangle, trapezoid, triangle, or a combination thereof, and the arbitrary waveform may change over time. The voltage pulse may have positive polarity or negative polarity. The sequence of voltage pulses may also include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. The first and second voltage generation units 32a and 32b may be provided in addition to the power supply 31, and the first voltage generation unit 32a may be provided in place of the second RF generation unit 31b.

[0027] The exhaust system 40 may be connected to, for example, a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0028] Next, the unit configuration of the plasma processing apparatus 1 will be described using Figures 3 to 5. Figure 3 is a diagram showing an example of the unit configuration of the plasma processing apparatus in this embodiment. Figure 4 is a diagram showing an example of each unit in this embodiment. Figure 5 is a block diagram showing an example of the connection of each unit in this embodiment. As shown in Figures 3 to 5, the plasma processing apparatus 1 includes a top rack unit 202, a reactor unit 210, a gas box unit 220, an RF unit 230, and an exhaust unit 240. In Figure 4, the reactor unit 210 and the exhaust unit 240 are given as examples, with a heater 212 and a turbomolecular pump 242 as controlled functions and a control unit 211 and a control unit 241 as controlling functions. Figure 5 shows an example where the reactor unit 210 and the exhaust unit 240 are subunits included in the main unit 310a. The plasma processing apparatus 1 is an example of a process module (PM).

[0029] The top rack unit 202 includes a higher control unit 203 corresponding to the control unit 2 described above, a branching slave 204, a control unit 205, a DC (Direct Current) power supply 206, and a communication unit 250. The higher control unit 203 is configured to manage the control units of each of the multiple units after the multiple units have been incorporated into the plasma processing apparatus 1 and assembled as the plasma processing apparatus 1. The higher control unit 203 is an example of a main controller. The branching slave 204 branches the communication path between units and connects the communication unit 250 of each unit to the higher control unit 203. The control unit 205 is configured to control each part of the top rack unit 202, such as the DC power supply 206. The control unit 205 is implemented by, for example, a computer, similar to the control unit 2 described above. The DC power supply 206 supplies DC power to each part, for example. The communication unit 250 is common to each unit and is connected to the higher control unit 203 via the branching slave 204. Furthermore, the communication unit 250 may have not only communication functions but also control functions for units, subunits, etc.

[0030] The main unit 310a includes a reactor unit 210 and an exhaust unit 240, as well as a communication unit 250 through which the reactor unit 210 and exhaust unit 240 communicate with a higher-level control unit 203. The communication unit 250 is connected to the control unit 211 of the reactor unit 210 and the control units 241 and 243 of the exhaust unit 240. The communication unit 250 is also connected to the higher-level control unit 203 via a branch slave 204. Note that the reactor unit 210 and the exhaust unit 240 may each be configured as separate main units.

[0031] The reactor unit 210 includes the plasma processing chamber 10 described above. The reactor unit 210 also includes, for example, a control unit 211, a heater 212, an impedance matching unit 213, and a DC power supply 214. The control unit 211 is configured to control each part of the reactor unit 210, such as the heater 212, the impedance matching unit 213, and the DC power supply 214. The control unit 211, like the control unit 2 described above, is implemented, for example, by a computer. The heater 212 is an example of a temperature control module in the substrate support unit 11 described above. Note that the heater 212 may also include a heater provided in the deposit shield. The impedance matching unit 213 is an example of at least one impedance matching unit that is electrically connected or coupled between the power supply 31 described above and the plasma processing chamber 10. The DC power supply 214 is an example of a chuck power supply that is electrically connected or coupled to the electrostatic chuck electrode 1111b described above. In other words, the reactor unit 210 includes a plasma processing chamber 10, a heater 212 is provided inside the plasma processing chamber 10, and the control unit 211 is configured to control the heater 212.

[0032] The gas box unit 220 includes the gas supply unit 20 and the like described above. The gas box unit 220 also has, for example, a control unit 221, a gas supply unit 222, and a communication unit 250. The control unit 221 is configured to control each part of the gas box unit 220, such as the gas supply unit 222. The control unit 221 is implemented, for example, by a computer, similar to the control unit 2 described above. The gas supply unit 222 corresponds to the gas supply unit 20 described above. The communication unit 250 is connected to the control unit 221. The communication unit 250 is also connected to the higher-level control unit 203 via a branch slave 204. Note that the gas box unit 220 is an example of a processed gas supply unit.

[0033] The RF unit 230 includes the power supply system 30 described above. The RF unit 230 also includes, for example, a control unit 231, power supplies 232 and 233, and a communication unit 250. The control unit 231 is configured to control each part of the RF unit 230, such as the power supplies 232 and 233. The control unit 231 is implemented, for example, by a computer, similar to the control unit 2 described above. Power supply 232 corresponds to the power supply 31 described above. Power supply 233 corresponds to the power supply 32 described above. The communication unit 250 is connected to the control unit 231. The communication unit 250 is also connected to the higher-level control unit 203 via a branch slave 204.

[0034] In other words, the RF unit 230 includes the first RF generation unit 31a and the second RF generation unit 31b described above, but is not limited to generating RF signals; microwave signals and DC pulse signals may also be generated. For example, in the first RF generation unit 31a, a microwave signal (microwave power supply) may be used instead of a source RF signal (source RF power) to generate plasma. Also, in the second RF generation unit 31b, a DC pulse signal (DC pulse power supply) may be used instead of a bias RF signal (bias RF power). Furthermore, the DC pulse signal may be generated in the first voltage generation unit 32a and the second voltage generation unit 32b described above.

[0035] The exhaust unit 240 includes the exhaust system 40 described above. The exhaust unit 240 also includes, for example, a control unit 241 and a turbomolecular pump 242, and a control unit 243 and an APC (Automatic Pressure Control) 244. The control unit 241 is configured to control the turbomolecular pump 242, which is an exhaust pump for vacuuming. The control unit 243 is configured to control the APC 244, which is an automatic pressure control valve that is a variable butterfly valve and automatically controls the pressure in the plasma processing chamber 10. The exhaust unit 240 may have multiple control units within a single unit. Note that the exhaust unit 240 is just one example of an exhaust unit.

[0036] As shown in Figure 3, the reactor unit 210 is located in the central region in the height direction of the plasma processing apparatus 1. That is, the plasma processing chamber 10 included in the reactor unit 210 is located in the central region in the height direction of the plasma processing apparatus 1. Here, the top rack unit 202, reactor unit 210, gas box unit 220, RF unit 230, and exhaust unit 240 are examples of multiple units. The multiple units are located above and below the plasma processing chamber 10 and are configured to have a control unit that allows each unit to inspect itself before being incorporated into the plasma processing apparatus 1 (substrate processing apparatus). Note that since the reactor unit 210 includes the plasma processing chamber 10, "located above and below the plasma processing chamber 10" means that subunits other than the plasma processing chamber 10 are located above and below the plasma processing chamber 10.

[0037] In other words, the multiple units include an exhaust unit 240 (exhaust unit), an RF unit 230, and a gas box unit 220 (processing gas supply unit). The exhaust unit and RF unit 230 are located below the plasma processing chamber 10. The upper control unit 203 and the processing gas supply unit are located above the plasma processing chamber 10. That is, the exhaust unit and RF unit 230 are located below the reactor unit 210, and the upper control unit 203 and the processing gas supply unit are located above the reactor unit 210.

[0038] Next, the hierarchical structure of each unit will be explained using Figure 6. Figure 6 is a diagram showing an example of the hierarchical structure of each unit. As shown in Figure 6, the process module 300 corresponding to the plasma processing apparatus 1 is assembled in a hierarchical structure from a plurality of main units 310, a plurality of subunits 320, a plurality of subassemblies 330, and a plurality of parts 340. Note that Figure 6 shows only a part of the hierarchical structure and some parts have been omitted. The main unit 310 is, for example, a unit (large unit) that corresponds to the workability and work method of assembling the apparatus, and is structured so that when the main units 310 are docked together, they are assembled into the apparatus (process module 300). The subunit 320 is, for example, a unit (medium unit) that corresponds to the workability, frequency, and work method of maintenance within the main unit 310. The subassembly 330 is, for example, a part (small unit) that is a collection of small parts that make up the subunit 320. Note that the subassembly 330 may be incorporated into the main unit 310 at the same hierarchical level as the subunit 320. Part 340 is, for example, one of the components that make up the sub-assembly 330.

[0039] In other words, the main unit 310 is composed of multiple subunits 320, which are child units. Each of the multiple subunits 320 (child units) may be equipped with its own lower control unit capable of performing its own inspection and adjustment. In the example described above, the main unit 310a is composed of a reactor unit 210 and an exhaust unit 240. In this case, the reactor unit 210 and the exhaust unit 240 become subunits 320. Also, the control units 211, 241, and 243 correspond to lower control units. Note that the main unit 310a may also be provided with a separate control unit.

[0040] In the plasma processing apparatus 1 described above, for example, the top rack unit 202, the gas box unit 220, the RF unit 230, and the main unit 310a all correspond to the main unit 310. Alternatively, for example, the reactor unit 210 and the exhaust unit 240 included in the main unit 310a may be configured to correspond to the main unit 310.

[0041] In other words, the top rack unit 202, reactor unit 210, gas box unit 220, RF unit 230, and exhaust unit 240 are configured to each have a control unit that allows them to inspect themselves before being incorporated into the plasma processing apparatus 1. Furthermore, each control unit of these units can inspect itself after multiple units have been incorporated into the plasma processing apparatus 1 and assembled as the plasma processing apparatus 1. In addition, each control unit of these units can be adjusted by its respective control unit before being incorporated into the plasma processing apparatus 1. Furthermore, each control unit of these units can be adjusted by its respective control unit after being assembled as the plasma processing apparatus 1. Furthermore, the upper control unit 203 can be inspected as the plasma processing apparatus 1 after it has been assembled as the plasma processing apparatus 1. Furthermore, the upper control unit 203 can be adjusted as the plasma processing apparatus 1 after it has been assembled as the plasma processing apparatus 1.

[0042] Next, the connection structure between units will be described using Figures 7 and 8. Figures 7 and 8 show an example of the connection structure between units in this embodiment. As shown in Figure 7, consider the case where, in the assembly of the plasma processing apparatus 1, for example, the exhaust unit 240 is docked to the assembled reactor unit 210 and RF unit 230. In this case, in the connection area 260 between the RF unit 230 and the exhaust unit 240, the area 261 on the exhaust unit 240 side and the area 262 on the RF unit 230 side, as shown in Figure 8, use connectors 263 and 266 with a one-touch connection structure. Connector 263 has, for example, an electrical connector 264 and two positioning pins 265. Similarly, connector 266 has, for example, an electrical connector 267 and two positioning holes 268. The positioning pins 265 and positioning holes 268 are pressed together while fitting into each other to determine the connection position between the RF unit 230 and the exhaust unit 240. The electrical connectors 264 and 267 are connected to each other. Other units may also be connected using connectors similar to those 263 and 266. In other words, units are connected using connectors that serve both to determine the connection position between the units and to provide electrical connections. Therefore, each connector connecting the units has a structure that allows for easy installation. Furthermore, connectors with a similarly easy-to-install structure may be used not only between units but also between the plasma processing apparatus 1 and the power supply equipment. This allows for easy connection of the connector 263 at the bottom of the exhaust unit 240 to the connector 266 of the RF unit 230 when docking the exhaust unit 240 to the reactor unit 210. Additionally, the ease of cable routing facilitates the automation of the assembly process of the plasma processing apparatus 1.

[0043] [Inspection Method] Next, the inspection method in this embodiment will be described. Figure 9 is a flowchart showing an example of the inspection method in this embodiment.

[0044] Before assembling the plasma processing apparatus 1, the control unit of each unit performs its own inspection for each unit (step S1). For example, the control unit 211 of the reactor unit 210 performs inspections of the heater 212, the matcher 213, and the DC power supply 214 as inspections of the reactor unit 210. Also, before assembling the plasma processing apparatus 1, the control unit of each unit may perform its own adjustment for each unit. For example, the control unit 211 of the reactor unit 210 may perform adjustments of the heater 212, the matcher 213, and the DC power supply 214 as adjustments of the reactor unit 210.

[0045] Next, after assembling the plasma processing apparatus 1, the control unit of each unit performs its own inspection for each unit (step S2). Also, after assembling the plasma processing apparatus 1, the control unit of each unit may perform its own adjustment for each unit.

[0046] Subsequently, after assembling the plasma processing apparatus 1, the upper control unit 203 performs an inspection of the plasma processing apparatus 1 (step S3). Also, after assembling the plasma processing apparatus 1, the upper control unit 203 may perform an adjustment of the plasma processing apparatus 1. Thus, in the inspection method according to this embodiment, the function can be inspected for each unit even at an intermediate stage of apparatus assembly. Also, since the inspection can be performed for each unit (part), improvement and assurance of quality can be expected in the assembly process.

[0047] That is, before each of the control units of the plurality of units is incorporated into the substrate processing apparatus (plasma processing apparatus 1), each control unit performs its own inspection for each unit. Also, after each of the control units of the plurality of units is assembled as the substrate processing apparatus, each control unit performs its own inspection for each unit. Also, after the upper control unit 203 is assembled as the substrate processing apparatus, the upper control unit 203 performs an inspection of the substrate processing apparatus.

[0048] As described above, according to this embodiment, the substrate processing apparatus (plasma processing apparatus 1) includes a chamber (plasma processing chamber 10), a plurality of units (units 202, 210, 220, 230, 240), and a host control unit 203. The chamber is disposed in the central region in the height direction of the substrate processing apparatus. The plurality of units are disposed above and below the chamber and are configured to each include a control unit (control units 205, 211, 221, 231, 241, 243) capable of inspecting itself for each unit before being incorporated into the substrate processing apparatus. The host control unit 203 is configured to oversee the control units of each of the plurality of units after the plurality of units are incorporated into the substrate processing apparatus and assembled as the substrate processing apparatus. Also, each of the control units of the plurality of units can inspect itself for each unit after being assembled as the substrate processing apparatus. Further, the host control unit 203 can be inspected as the substrate processing apparatus after being assembled as the substrate processing apparatus. As a result, it is possible to inspect the functions for each unit even in the middle of the device assembly process.

[0049] Also, according to this embodiment, before being incorporated into the substrate processing apparatus, the plurality of units can be adjusted for each unit by their respective control units. As a result, the working time of the device assembly can be shortened.

[0050] Also, according to this embodiment, after being assembled as the substrate processing apparatus, the plurality of units can be adjusted for each unit by their respective control units. As a result, the device assembly process can be flexibly organized. Also, when there are failures or malfunctions in the components after device assembly, readjustment can be performed in units including the component.

[0051] Also, according to this embodiment, after being assembled as the substrate processing apparatus, the host control unit 203 can be adjusted as the substrate processing apparatus. As a result, the entire device can be adjusted without using a jig.

[0052] Also, according to this embodiment, the plurality of units include an exhaust unit (exhaust unit 240). As a result, it is possible to inspect and adjust the functions of the exhaust unit even in the middle of the device assembly process.

[0053] Furthermore, according to this embodiment, the multiple units include an RF unit 230. As a result, the RF unit 230 can be functionally inspected and adjusted even during the assembly of the device.

[0054] Furthermore, according to this embodiment, the multiple units include a processing gas supply unit (gas box unit 220). As a result, the processing gas supply unit can be inspected and adjusted even during the assembly of the device.

[0055] Furthermore, according to this embodiment, the plurality of units include an exhaust unit, an RF unit 230, and a processing gas supply unit. The exhaust unit and the RF unit 230 are located on the lower side of the chamber, while the upper control unit 203 and the processing gas supply unit are located on the upper side of the chamber. As a result, the footprint of the substrate processing apparatus (plasma processing apparatus 1) can be reduced.

[0056] Furthermore, according to this embodiment, the multiple units include a reactor unit 210 which includes a chamber, a heater 212 is provided inside the chamber, and a control unit 211 controls the heater 212. As a result, the functions of the heater 212 and other components of the reactor unit 210 can be inspected and adjusted even during the assembly of the device.

[0057] Furthermore, according to this embodiment, the multiple units include an exhaust unit, an RF unit 230, and a processing gas supply unit. The exhaust unit and the RF unit 230 are located below the reactor unit 210, while the upper control unit 203 and the processing gas supply unit are located above the reactor unit 210. As a result, the footprint of the substrate processing apparatus (plasma processing apparatus 1) can be reduced.

[0058] Furthermore, according to this embodiment, the chamber is a vacuum chamber. As a result, functional testing (e.g., leak testing) and adjustments can be performed on the substrate processing apparatus using the vacuum chamber even during the assembly process.

[0059] Furthermore, according to this embodiment, the units are connected by connectors (connectors 263, 266) that serve both to determine the connection position between the units to be connected and to make electrical connections. As a result, the units can be easily connected to each other.

[0060] Furthermore, according to this embodiment, each of the multiple units is composed of multiple sub-units. As a result, the functionality of each sub-unit can be inspected and adjusted even during the assembly of the device.

[0061] Furthermore, according to this embodiment, each of the multiple child units is equipped with a sub-control unit capable of performing its own inspection. As a result, the functions of each child unit can be inspected and adjusted even during the assembly of the device.

[0062] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0063] Furthermore, although the above-described embodiment described a plasma processing apparatus 1 having a structure with multiple units, it is not limited to this. For example, other devices such as a load lock module, a vacuum transport module, and an atmospheric transport module may also have a similar structure with multiple units.

[0064] Furthermore, this disclosure may also take the following configurations: (1) A substrate processing apparatus comprising: a chamber disposed in the central region in the height direction of the substrate processing apparatus; a plurality of units disposed above and below the chamber, each unit being configured to have a control unit capable of performing its own inspection before being incorporated into the substrate processing apparatus; and a higher-level control unit configured to consolidate the control units of each of the plurality of units after the plurality of units have been incorporated into the substrate processing apparatus and assembled as the substrate processing apparatus, wherein each of the control units of the plurality of units is capable of performing its own inspection after being assembled as the substrate processing apparatus, and the higher-level control unit is capable of performing the substrate processing apparatus inspection after being assembled as the substrate processing apparatus. (2) The substrate processing apparatus according to (1), wherein each of the plurality of units is capable of performing its own adjustment by its respective control unit before being incorporated into the substrate processing apparatus. (3) The substrate processing apparatus according to (1) or (2), wherein each of the plurality of units is capable of performing its own adjustment by its respective control unit after being assembled as the substrate processing apparatus. (4) The substrate processing apparatus according to any one of (1) to (3), wherein the upper control unit can be adjusted as the substrate processing apparatus after it has been assembled as the substrate processing apparatus. (5) The substrate processing apparatus according to any one of (1) to (4), wherein the plurality of units include an exhaust unit. (6) The substrate processing apparatus according to any one of (1) to (5), wherein the plurality of units include an RF (Radio Frequency) unit. (7) The substrate processing apparatus according to any one of (1) to (6), wherein the plurality of units include a processing gas supply unit. (8) The substrate processing apparatus according to any one of (1) to (4), wherein the plurality of units include an exhaust unit, an RF unit and a processing gas supply unit, the exhaust unit and the RF unit are located below the chamber, and the upper control unit and the processing gas supply unit are located above the chamber.(9) The substrate processing apparatus according to any one of (1) to (7), wherein the plurality of units include the chamber, the chamber is provided with a heater, and the control unit is configured to control the heater. (10) The substrate processing apparatus according to (9), wherein the plurality of units include an exhaust unit, an RF unit, and a processing gas supply unit, the exhaust unit and the RF unit are located below the reactor unit, and the upper control unit and the processing gas supply unit are located above the reactor unit. (11) The substrate processing apparatus according to any one of (1) to (10), wherein the chamber is a vacuum chamber. (12) The substrate processing apparatus according to any one of (1) to (11), wherein the units are connected by connectors that serve both to determine the connection position between the connected units and to make an electrical connection. (13) The substrate processing apparatus according to any one of (1) to (12), wherein each of the plurality of units is composed of a plurality of sub-units. (14) The substrate processing apparatus according to (13), wherein each of the plurality of child units is provided with a lower control unit capable of performing its own inspection. (15) A method for inspecting a substrate processing apparatus, wherein the substrate processing apparatus comprises: a chamber disposed in the central region in the height direction of the substrate processing apparatus; a plurality of units disposed above and below the chamber and configured to each have a control unit capable of performing its own inspection before being incorporated into the substrate processing apparatus; and a higher control unit configured to manage the control units of each of the plurality of units after the plurality of units have been incorporated into the substrate processing apparatus and assembled as the substrate processing apparatus, the method for inspecting a substrate processing apparatus comprising: each of the control units of the plurality of units performing its own inspection before being incorporated into the substrate processing apparatus; each of the control units of the plurality of units performing its own inspection after being assembled as the substrate processing apparatus; and the higher control unit performing an inspection of the substrate processing apparatus after being assembled as the substrate processing apparatus.

[0065] 1 Plasma processing apparatus 2 Control unit 10 Plasma processing chamber 20 Gas supply unit 30 Power supply system 40 Exhaust system 202 Top rack unit 203 Upper control unit 205, 211, 221, 231, 241, 243 Control unit 210 Reactor unit 212 Heater 220 Gas box unit 230 RF unit 240 Exhaust unit 242 Turbo molecular pump 244 APC 250 Communication unit 263, 266 Connector 300 Process module 310, 310a Main unit 320 Subunit 330 Subassembly 340 Parts

Claims

1. A substrate processing apparatus comprising: a chamber disposed in the central region in the height direction of the substrate processing apparatus; a plurality of units disposed above and below the chamber, each unit being configured to have a control unit capable of performing its own inspection before being incorporated into the substrate processing apparatus; and a higher-level control unit configured to manage the control units of each of the plurality of units after the plurality of units have been incorporated into the substrate processing apparatus and assembled as the substrate processing apparatus, wherein each of the control units of the plurality of units is capable of performing its own inspection after being assembled as the substrate processing apparatus, and the higher-level control unit is capable of performing the substrate processing apparatus as a whole after being assembled as the substrate processing apparatus.

2. The substrate processing apparatus according to claim 1, wherein each of the plurality of units can be adjusted by its respective control unit before being incorporated into the substrate processing apparatus.

3. The substrate processing apparatus according to claim 1 or 2, wherein, after the plurality of units are assembled as the substrate processing apparatus, each unit can be adjusted by its respective control unit.

4. The substrate processing apparatus according to claim 1 or 2, wherein the upper control unit can be adjusted as a substrate processing apparatus after it has been assembled as such.

5. The substrate processing apparatus according to claim 1 or 2, wherein the plurality of units include an exhaust unit.

6. The substrate processing apparatus according to claim 1 or 2, wherein the plurality of units include an RF (Radio Frequency) unit.

7. The substrate processing apparatus according to claim 1 or 2, wherein the plurality of units include a processing gas supply unit.

8. The substrate processing apparatus according to claim 1 or 2, wherein the plurality of units include an exhaust unit, an RF unit, and a processing gas supply unit, the exhaust unit and the RF unit are located below the chamber, and the upper control unit and the processing gas supply unit are located above the chamber.

9. The substrate processing apparatus according to claim 1 or 2, wherein the plurality of units include a reactor unit comprising the chamber, the chamber having a heater, and the control unit being configured to control the heater.

10. The substrate processing apparatus according to claim 9, wherein the plurality of units include an exhaust unit, an RF unit, and a processing gas supply unit, the exhaust unit and the RF unit are located below the reactor unit, and the upper control unit and the processing gas supply unit are located above the reactor unit.

11. The substrate processing apparatus according to claim 1 or 2, wherein the chamber is a vacuum chamber.

12. The substrate processing apparatus according to claim 1 or 2, wherein the units are connected by a connector that serves both to determine the connection position between the connected units and to make an electrical connection.

13. The substrate processing apparatus according to claim 1 or 2, wherein each of the plurality of units is composed of a plurality of sub-units.

14. The substrate processing apparatus according to claim 13, wherein each of the plurality of child units is provided with a lower control unit capable of performing its own inspection.

15. A method for inspecting a substrate processing apparatus, the substrate processing apparatus comprising: a chamber disposed in the central region in the height direction of the substrate processing apparatus; a plurality of units disposed above and below the chamber, each unit having a control unit capable of performing its own inspection before being incorporated into the substrate processing apparatus; a higher-level control unit configured to manage the control units of each of the plurality of units after the plurality of units have been incorporated into the substrate processing apparatus and assembled as the substrate processing apparatus, the method for inspecting a substrate processing apparatus comprising: each of the control units of the plurality of units performing its own inspection before being incorporated into the substrate processing apparatus; each of the control units of the plurality of units performing its own inspection after being assembled as the substrate processing apparatus; and the higher-level control unit performing an inspection of the substrate processing apparatus after being assembled as the substrate processing apparatus.

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