Processing system and processing method

Abstract

A processing system that mounts a plurality of dies on a substrate, including a plurality of bonding devices that bond the dies held by a die carrier to the substrate, and a gas supply device that supplies a gas to the plurality of bonding devices, wherein the gas supply device includes a gas adjustment unit that is provided so as to be shared by the plurality of bonding devices and adjusts at least the temperature of the gas.

Description

Processing System and Processing Method

[0001] The present disclosure relates to a processing system and a processing method.

[0002] Patent Document 1 discloses a chip-on-wafer bonding method for mounting chips on a wafer. In this chip-on-wafer bonding method, after performing surface activation treatment and hydrophilic treatment on the surface of the chip and surface activation treatment and hydrophilic treatment on the surface of the substrate, a plurality of chips are bonded to the substrate.

[0003] Japanese Patent No. 6337400

[0004] The technology according to the present disclosure efficiently mounts a plurality of dies on a substrate.

[0005] One aspect of the present disclosure is a processing system for mounting a plurality of dies on a substrate, including a plurality of bonding devices for bonding the dies held by a die carrier to the substrate, and a gas supply device for supplying gas to the plurality of bonding devices. The gas supply device is commonly provided for the plurality of bonding devices and has a gas adjustment unit for adjusting at least the temperature of the gas.

[0006] According to the present disclosure, a plurality of dies can be efficiently mounted on a substrate.

[0007] It is a side view showing an outline of the configuration of a wafer on which a plurality of dies are mounted. It is a side view showing an outline of the configuration of a carrier holding a plurality of dies. It is a plan view showing an outline of the configuration of a processing system. It is a plan view showing an outline of the configuration of a second processing block. It is a perspective view showing an outline of the configuration of a bonding device. It is an explanatory view showing an operation in the bonding device. It is an explanatory view showing a state of adjusting the positions of a first imaging unit and a second imaging unit. It is an explanatory view schematically showing an outline of the configuration of a gas supply device. It is a flowchart showing main steps of a die-on-wafer manufacturing process. It is an explanatory view schematically showing a part of a die-on-wafer manufacturing process. It is a side view showing an outline of the configuration of a tape frame holding a plurality of dies. It is an explanatory view schematically showing a part of a die-on-wafer manufacturing process according to another embodiment. It is a plan view showing an outline of the configuration of a second processing block according to another embodiment.

[0008] The processing system and processing method according to this embodiment will be described below with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant explanations will be omitted.

[0009] In this embodiment, a diion wafer manufacturing process is carried out, and as shown in Figure 1, multiple dies D are mounted on a wafer W, which serves as a substrate. Specifically, as shown in Figure 2, multiple dies D held by carrier C, which serves as a die carrier, are bonded to the wafer W to be mounted.

[0010] As shown in Figures 1 and 2, the die D has a structure in which, for example, a silicon layer S and a device layer E are stacked. A circuit is formed on the device layer E. In the die D, the side on which the device layer E is formed is called the surface Da, and the side opposite to surface Da is called the back surface Db. Surface Da is the bonding surface to which the die D is bonded to the wafer W.

[0011] As shown in Figure 1, the wafer W on which the die D is mounted is a semiconductor wafer, such as a silicon substrate or a glass substrate, used in the semiconductor device manufacturing process. For example, the wafer W has a diameter of 300 mm and a thickness of approximately 800 μm. On the wafer W, the side on which the die D is mounted is called the surface Wa, and the side opposite to the surface Wa is called the back surface Wb. The surface Wa is the bonding surface to which the device layer E on the surface Da side of the die D is bonded.

[0012] The number and arrangement of dies D mounted on the surface Wa of the wafer W are set to a desired pattern. Furthermore, a device layer (not shown) may be formed on the surface Wa. Such a device layer is formed to correspond to the device layer E of the die D.

[0013] As shown in Figure 2, the carrier C has an adsorption surface on its upper surface for holding multiple dies D by electrostatic and vacuum adsorption. The carrier C adsorbs and holds the silicon layer S on the back surface Db side of the die D. The carrier C has a structure in which a substrate M and a holding layer N are laminated.

[0014] The substrate M has approximately the same diameter and thickness as the wafer W on which the die D is mounted, for example, a diameter of 300 mm and a thickness of approximately 800 μm. The substrate M is made of any conductive material, such as silicon, aluminum, aluminum alloy, stainless steel, alumina, zirconia, SiC, or titanium. In other words, a silicon substrate may be used as the substrate M. The substrate M may have approximately the same diameter as the wafer W on which the die D is mounted, but with a different thickness (for example, 500 μm to 1000 μm) than the wafer W.

[0015] Multiple through-holes H are formed in the substrate M, penetrating in the thickness direction. These multiple through-holes H can be formed at any position on the adsorption surface of the carrier C. For example, one through-hole H may be formed corresponding to each of the multiple dies D held by the carrier C, in other words, the same number as the multiple dies D held by the carrier C. Alternatively, multiple through-holes H may be formed corresponding to each of the multiple dies D held by the carrier C, in other words, more than the number of dies D held by the carrier C.

[0016] Furthermore, while the number, size, spacing, and arrangement of through-holes H are not particularly limited, it is desirable to determine the number, size, and spacing so as to ensure sufficient strength (rigidity) to prevent deformation such as bending in the carrier C. For example, the diameter of the through-holes H is 0.5 mm to 5.0 mm, and the spacing (distance between the centers of adjacent through-holes H) is 0.5 mm to 5.0 mm.

[0017] The retaining layer N is a layer formed on the surface of the substrate M and constitutes the adsorption surface of the die D on the carrier C. The retaining layer N does not have through holes and covers the surface of the substrate M. The thickness of the retaining layer N is sufficient to hold the die D on the carrier C by electrostatic adsorption, for example, several tens of micrometers.

[0018] The retaining layer N is composed of a material that is thermoplastic, flexible, and insulating, such as polyimide or EVA (ethylene vinyl acetate copolymer). In this embodiment, "the retaining layer N is thermoplastic" means that it can flow and soften at a predetermined temperature, for example, 80°C, and be remolded. Furthermore, "the retaining layer N is flexible" means that the elastic modulus of the retaining layer N on the substrate M is 2 GPa or less, preferably 0.5 GPa or less. Furthermore, "the retaining layer N is insulating" means that the dielectric breakdown voltage of the retaining layer N on the substrate M is 30 kV or more, preferably 40 kV or more.

[0019] In this embodiment, the carrier C is configured as described above, and by generating an electrostatic (Coulomb) force between the carrier C and the die D, the die D is adsorbed and held on the adsorption surface.

[0020] Furthermore, in this embodiment, the carrier C has a retaining layer N formed from a flexible material with a low modulus of elasticity. After the die D is placed on the carrier C, a gap is formed between the die D and the retaining layer N before the die D is adsorbed and held by electrostatic force. Due to the flexibility of this retaining layer N, when the die D is adsorbed by electrostatic force on the carrier C, the force with which the die D is adsorbed to the retaining layer N causes air to escape from between the die D and the retaining layer N, creating a pseudo-vacuum state between the die D and the retaining layer N. As a result, in addition to electrostatic adsorption by electrostatic force, a vacuum adsorption force formed by the pseudo-vacuum state is generated between the carrier C and the die D, creating a strong retaining state using both electrostatic and vacuum adsorption forces.

[0021] The method of holding the die D with the carrier C is not limited to this embodiment. For example, the die D may be pressed against the carrier C. In this case, pressing the die D against the carrier C allows air to escape from between the die D and the holding layer N, creating a vacuum adsorption force between the die D and the holding layer N, and the die D is adsorbed and held by the carrier C. Alternatively, the holding layer N may be heated when pressing the die D against the carrier C. In this case, since the holding layer N is thermoplastic, the holding layer N softens, making it easier for the die D to be adsorbed and held by the carrier C. The material of the base material M in the carrier C does not need to be conductive and is optional. Similarly, the material of the holding layer N only needs to be thermoplastic and flexible; it does not need to be insulating and is optional.

[0022] Alternatively, for example, an adhesive sheet may be used for the retaining layer N of the carrier C. In this case, an adhesive force is generated between the die D and the retaining layer N, and the die D is held in place by the carrier C. A heat-release sheet may also be used for the retaining layer N. A heat-release sheet is adhesive at room temperature but peels off when heated. As will be described later, when bonding the die D to the wafer W, the die D is detached from the carrier C. Heating the retaining layer N at this time can make it easier to detach the die D.

[0023] Next, the processing system 1 according to this embodiment will be described. In the processing system 1, multiple dies D held on a carrier C are bonded to a wafer W for mounting. Figure 3 is a plan view showing a schematic configuration of the processing system 1.

[0024] As shown in Figure 3, the processing system 1 has a configuration in which the loading / unloading station 10 and the processing station 20 are connected as an integrated unit. At the loading / unloading station 10, for example, hoops Fw and Fc, each capable of accommodating multiple wafers W and multiple carriers C, are loaded and unloaded from the outside. The processing station 20 is equipped with various processing devices for realizing a series of processes described later.

[0025] A hoop mounting platform 30 is provided at the loading / unloading station 10. In the illustrated example, multiple hoops, for example, two hoops Fw and two hoops Fc, are placed on the hoop mounting platform 30 in a line along the Y-axis. The number and arrangement of hoops Fw and Fc placed on the hoop mounting platform 30 are not limited to this embodiment and can be determined arbitrarily.

[0026] A transport device 40 is provided adjacent to the hoop mounting table 30 on the positive X-axis side. The transport device 40 has a transport mechanism 41 inside. The transport mechanism 41 is configured to move freely on a transport path 42 that extends in the Y-axis direction. The transport mechanism 41 also has, for example, two transport arms 43, 43 that hold and transport the wafer W and carrier C. Each transport arm 43 is configured to move freely in the horizontal direction, vertical direction, around the horizontal axis and around the vertical axis, and is configured to transport the wafer W and carrier C to the hoops Fw, Fc of the hoop mounting table 30, the transition stage 60 (described later), and the buffer device 61 (described later).

[0027] The processing station 20 is provided with, for example, two processing blocks 21 and 22. The first processing block 21 and the second processing block 22 are arranged in this order from the negative X-axis side to the positive X-axis side.

[0028] The first processing block 21 is equipped with a transport device 50, a transition stage 60, a buffer device 61, a transport device 70, a transition stage 80, a wafer modification device 90, a die modification device 91, a wafer cleaning device 100, a die cleaning device 101, a wafer hydrophilization device 102, and a die hydrophilization device 103. The number and arrangement of these various processing devices are not limited to this embodiment and can be determined arbitrarily.

[0029] The transport device 50 has a transport mechanism 51 inside. The transport mechanism 51 is configured to move freely on a transport path 52 that extends in the X-axis direction. The transport mechanism 51 also has, for example, two transport arms 53, 53 that hold and transport the wafer W and the carrier C. Each transport arm 53 is configured to move freely in the horizontal direction, vertical direction, around the horizontal axis and around the vertical axis, and is configured to transport the wafer W and the carrier C to the transition stage 60, buffer device 61, transition stage 80, wafer cleaning device 100, die cleaning device 101, wafer hydrophilization device 102 and die hydrophilization device 103, transition stage 120 (described later), and buffer device 121 (described later).

[0030] The transition stage 60 and buffer device 61 are positioned on the negative X-axis side of the transport device 50. The transition stage 60 and buffer device 61 are stacked vertically from top to bottom in this order. Multiple buffer devices 61 may be stacked.

[0031] The transition stage 60 transfers the wafer W and carrier C between the transport device 40 and the transport device 50. The buffer device 61 temporarily stores the wafer W and carrier C.

[0032] The transport device 70, transition stage 80, wafer modification device 90, and die modification device 91 are arranged on the positive Y-axis side of the transport device 50. Two transition stages 80 are arranged side by side in the X-axis direction on the negative Y-axis side of the transport device 70. The wafer modification device 90 and die modification device 91 are arranged in this order from the negative X-axis side to the positive X-axis side, with the transport device 70 and the two transition stages 80 in between.

[0033] The transport device 70 has, for example, two transport arms 71, 71 that hold and transport the wafer W and the carrier C. Each transport arm 71 is configured to be movable in the horizontal direction, vertical direction, around the horizontal axis and around the vertical axis, and is configured to transport the wafer W and the carrier C to the transition stage 80, the wafer modification device 90 and the die modification device 91.

[0034] The transition stage 80 transfers the wafer W and carrier C between the transfer device 50 and the transfer device 70.

[0035] The wafer modification apparatus 90 modifies the surface Wa of the wafer W using plasma. In the wafer modification apparatus 90, for example, under a reduced pressure atmosphere, the processing gas, such as oxygen gas, nitrogen gas, or argon gas, is excited and converted into plasma and ionized. These oxygen ions, nitrogen ions, argon ions, etc., are irradiated onto the surface Wa of the wafer W, and the surface Wa is plasma-treated and modified.

[0036] The die modification apparatus 91, like the wafer modification apparatus 90, modifies the surface Da of the die D using plasma. In the die modification apparatus 91, for example, under a reduced pressure atmosphere, the processing gas, such as oxygen gas, nitrogen gas, or argon gas, is excited, turned into plasma, and ionized. These oxygen ions, nitrogen ions, argon ions, etc., are irradiated onto the surface Da of the die D, and the surface Da is plasma-treated and modified.

[0037] The wafer cleaning device 100, die cleaning device 101, wafer hydrophilization device 102, and die hydrophilization device 103 are arranged on the negative Y-axis side of the transport device 50. The wafer cleaning device 100 and the wafer hydrophilization device 102 are stacked in this order from the top in the vertical direction. The die cleaning device 101 and the die hydrophilization device 103 are stacked in this order from the top in the vertical direction. The wafer cleaning device 100 and the die cleaning device 101 are arranged in this order from the negative X-axis side to the positive X-axis side. The wafer hydrophilization device 102 and the die hydrophilization device 103 are arranged in this order from the negative X-axis side to the positive X-axis side.

[0038] The wafer cleaning apparatus 100 cleans the surface Wa of the wafer W. In the wafer cleaning apparatus 100, a cleaning solution, such as pure water, DI water, DHF, or IPA, is supplied onto the wafer W while it is being rotated, for example, by a spin chuck. The supplied cleaning solution then diffuses over the surface Wa of the wafer W, and the surface Wa is cleaned.

[0039] The die cleaning apparatus 101 also cleans the surface Da of the die D, similar to the wafer cleaning apparatus 100. In the die cleaning apparatus 101, a cleaning solution is supplied onto the die D held on the carrier C while the carrier C held in the chuck is rotated. The supplied cleaning solution then diffuses over the surface Da of the die D, and the surface Da is cleaned.

[0040] The wafer hydrophilization apparatus 102 hydrophilizes and rinses the surface Wa of the wafer W. In the wafer hydrophilization apparatus 102, for example, the wafer W held in a spin chuck is rotated while pure water is supplied onto the wafer W. As a result, the supplied pure water diffuses over the surface Wa of the wafer W, making the surface Wa hydrophilic. The surface Wa is also rinsed by the pure water.

[0041] The die hydrophilization apparatus 103, like the wafer hydrophilization apparatus 102, hydrophilizes and rinses the surface Da of the die D. In the die hydrophilization apparatus 103, for example, a carrier C held in a spin chuck is rotated while a cleaning solution is supplied onto the die D held in the carrier C. The supplied cleaning solution then diffuses over the surface Da of the die D, making the surface Da hydrophilic. The surface Da is then rinsed with pure water.

[0042] The second processing block 22 is equipped with a transport device 110, a transition stage 120, a buffer device 121, bonding devices 130A to 130D, and a gas supply device 140. The number and arrangement of these various processing devices are not limited to this embodiment and can be determined arbitrarily. For example, although four bonding devices 130A to 130D are provided, their number and arrangement are arbitrary. In the following description, these four bonding devices 130A to 130D may be collectively referred to as bonding device 130.

[0043] The transfer device 110 has a transfer mechanism 111 inside. The transfer mechanism 111 is configured to be movable on a transfer path 112 extending in the X-axis direction. The transfer mechanism 111 has, for example, two transfer arms 113, 113 that hold and transfer the wafer W and the carrier C. Each transfer arm 113 is configured to be movable in the horizontal direction, the vertical direction, around the horizontal axis, and around the vertical axis, and is configured to be able to transfer the wafer W and the carrier C to the transition stage 120, the buffer device 121, and the bonding devices 130A to 130D.

[0044] The transition stage 120 and the buffer device 121 are arranged on the negative X-axis side of the transfer device 110. The transition stage 120 and the buffer device 121 are provided stacked in this order from the upper stage in the vertical direction. Note that a plurality of buffer devices 121 may be provided stacked.

[0045] The transition stage 120 transfers the wafer W and the carrier C between the transfer device 50 and the transfer device 110. The buffer device 121 temporarily stores the wafer W and the carrier C.

[0046] The bonding devices 130A and 130B are arranged side by side in this order from the negative X-axis side to the positive X-axis side on the negative Y-axis side of the transfer device 110. The bonding devices 130C and 130D are arranged side by side in this order from the negative X-axis side to the positive X-axis side on the positive Y-axis side of the transfer device 110. Each of the bonding devices 130A to 130D picks up the die D held by the carrier C and bonds it to the surface Wa of the wafer W. The details of the configuration of the bonding devices 130A to 130D will be described later.

[0047] The gas supply device 140 is connected to the bonding devices 130A to 130D and the transfer device 110, and supplies gas to each of these bonding devices 130A to 130D and the transfer device 110. For the gas, for example, an inert gas or air is used. The details of the configuration of the gas supply device 140 will be described later.

[0048] At least one control device 150 is provided in the above processing system 1. The control device 150 processes computer-executable instructions for causing the processing system 1 to execute various processes described in the present disclosure. The control device 150 can be configured to control each element of the processing system 1 to execute the various processes described herein. In one embodiment, part or all of the control device 150 may be included in the processing system 1. The control device 150 may include a processing unit, a storage unit, and a communication interface. The control device 150 is realized by, for example, a computer. The processing unit can be configured to read a program that provides logic or routines that enable performing various control operations from the storage unit and perform various control operations by executing the read program. This program may be stored in the storage unit in advance or may be acquired via a medium when necessary. The acquired program is stored in the storage unit and read from the storage unit by the processing unit and executed. The medium may be various computer-readable storage media or may be a communication line connected to the communication interface. The storage media may be temporary or non-temporary. The processing unit may be a CPU (Central Processing Unit) or may be one or more circuits. The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the processing system 1 via a communication line such as a LAN (Local Area Network).

[0049] Note that although the processing system 1 according to this embodiment is configured as described above, other processing devices may be further arranged in the processing system 1 according to the purpose, and part of the processing devices may be arranged outside the processing system 1 according to the purpose.

[0050] For example, the processing system 1 may be equipped with an inspection device for inspecting a wafer W on which a die D is mounted. The inspection device may, for example, use an IR camera to image the wafer W and inspect for the presence or absence of voids between the surface Wa of the wafer W and the die D.

[0051] For example, the wafer modification apparatus 90 and the die modification apparatus 91 may be made common, and the surface Wa of the wafer W or the surface Da of the die D may be modified in the common modification apparatus. Alternatively, the wafer cleaning apparatus 100 and the die cleaning apparatus 101 may be made common, and the surface Wa of the wafer W or the surface Da of the die D may be cleaned in the common cleaning apparatus. Furthermore, the wafer hydrophilization apparatus 102 and the die hydrophilization apparatus 103 may be made common, and the surface Wa of the wafer W or the surface Da of the die D may be made hydrophilic in the common hydrophilization apparatus.

[0052] Next, the configuration of the joining devices 130A to 130D described above will be explained. Figure 4 is a plan view showing a schematic configuration of the second processing block 22, which includes the joining devices 130A to 130D.

[0053] As shown in Figure 4, the bonding apparatus 130A to 130D has chambers 200A to 200D. In chambers 200A to 200D, shutters 201A to 201D are provided on the side facing the transport apparatus 110 to open and close the loading and unloading ports for the carrier C and wafer W.

[0054] In chambers 200A to 200D, panels 202A to 202D are provided on the side opposite to the conveying device 110. Panels 202A to 202D have the function of opening and closing work openings for maintenance and inspection inside the joining devices 130A to 130D, for example.

[0055] Panels 202A to 202D also have air supply sections 203A to 203D and dust collection filters 204A to 204D. The air supply sections 203A to 203D disperse the gas supplied from the gas supply device 140 and supply the gas to the inside of chambers 200A to 200D. The dust collection filters 204A to 204D are installed on the inside (internal side) of the air supply sections 203A to 203D and remove foreign matter (impurities) from the gas supplied from the air supply sections 203A to 203D.

[0056] In the example shown in Figure 4, two panels 202A to 202D are provided for each chamber 200A to 200D, but the number and arrangement of panels 202A to 202D are not limited to this embodiment.

[0057] Furthermore, in chambers 200A to 200D, an exhaust mechanism (not shown) is provided on the shutter 201A to 201D side to discharge the internal atmosphere of chambers 200A to 200D. In this case, inside chambers 200A to 200D, the gas supplied from the air supply sections 203A to 203D and from which foreign matter has been removed by the dust collection filters 204A to 204D is discharged from the exhaust mechanism, and an airflow is formed from the air supply sections 203A to 203D toward the exhaust mechanism (see the dotted arrow in Figure 4). That is, inside chambers 200A and 200B, an airflow is formed moving from the negative Y-axis direction toward the positive Y-axis direction, and inside chambers 200C and 200D, an airflow is formed moving from the positive Y-axis direction toward the negative Y-axis direction.

[0058] As described above, an airflow directed toward the transport device 110 is formed inside chambers 200A to 200D, thereby suppressing the inflow of air from the transport device 110 into chambers 200A to 200D. As a result, the cleanliness of the internal atmosphere of chambers 200A to 200D can be maintained. Furthermore, as will be described later, even if particles are generated from the drive unit of the moving mechanism 260, for example, which is located on the transport device 110 side inside chambers 200A to 200D, it is possible to suppress the flow of these particles toward the wafer W and die D. As a result, the adhesion of foreign matter to the wafer W and die D can be suppressed, and the bonding accuracy of the die D to the wafer W can be improved.

[0059] Next, the internal configuration of chambers 200A to 200D of joining devices 130A to 130D will be described. The internal configurations of joining devices 130A to 130D are similar, and joining devices 130A, 130B and joining devices 130C, 130D are configured symmetrically in the Y-axis direction with the conveying device 110 in between. The following description will focus on joining device 130A. Figure 5 is a perspective view showing a schematic of the internal configuration of joining device 130A.

[0060] As shown in Figure 5, the bonding apparatus 130A has a frame 210. The frame 210 is divided into a first frame (pickup area) 211 and a second frame (bonding area) 212. The first frame 211 and the second frame 212 are arranged side by side in the horizontal direction (X-axis direction). In the pickup area, which is the first frame 211, the die D held by the carrier C is detached from the carrier C and picked up. In the bonding area, which is the second frame 212, the die D picked up by the first frame 211 is bonded to the wafer W. In the illustrated example, the bonding apparatus 130A is located on the negative Y-axis side of the transport device 50, and the transport device 110 is located on the positive Y-axis side of the frame 210.

[0061] Below the frame 210, a seismic damping mechanism 220 is provided to dampen the frame 210 by vibration. The seismic damping mechanism 220 has a support base 221 and dampers 222. The support base 221 supports a plurality of dampers 222, for example, four dampers 222. The plurality of dampers 222 support the lower surface of the frame 210 and dampen the frame 210 by vibration.

[0062] In this embodiment, the first frame 211 and the second frame 212 are provided integrally in the frame 210, but they may be provided separately. In this case, a seismic damping mechanism may be provided for each of the first frame 211 and the second frame 212.

[0063] The first frame 211 is provided with a carrier holding section 230, which serves as a die carrier holding section. The carrier holding section 230 has the holding surface of the carrier C on its upper surface and holds the carrier C from below, with each surface Da of the multiple dies D held by the carrier C facing upward.

[0064] A moving mechanism 231 is provided below the carrier holding section 230. The moving mechanism 231 supports the carrier holding section 230 and moves the carrier holding section 230 in the horizontal direction (X-axis direction and Y-axis direction). The moving mechanism 231 is supported by the first frame 211. The drive unit (not shown) of the moving mechanism 231 is not particularly limited, but a linear motor, for example, can be used.

[0065] A detachment section 240 is provided inside the carrier holding section 230. The detachment section 240 detaches the die D from the suction surface of the carrier C. The detachment section 240 is configured to be detachably attached to and replaceable from the carrier holding section 230.

[0066] The detachment section 240 has an air supply hole (not shown) for supplying air. The detachment section 240 supplies air through the air supply hole to the through hole H of the carrier C held by the carrier holding section 230, and further supplies air to the back surface Db side of the die D on the carrier C through the through hole H. As a result, pressure is applied to the die D by the air, which reduces the adhesion force between the die D and the holding layer N on the adsorption surface of the carrier C. This allows the die D to be detached from the adsorption surface of the carrier C.

[0067] Furthermore, the detachment section 240 has a push-up pin (not shown) that is configured to move up and down. The detachment section 240 can push up the die D on the carrier C held by the carrier holding section 230 from below using the push-up pin, thereby detaching the die D from the suction surface of the carrier C.

[0068] In this embodiment, the detachment portion 240 may be equipped with both an air supply hole and a push-up pin, or it may be equipped with either one or the other.

[0069] A die transport unit 250 is provided above the carrier holding unit 230. For example, a collet is used in the die transport unit 250. As shown in Figure 6, the die transport unit 250 picks up the die D from the carrier C, transports the die D with its surface Da facing upward, and then transfers the die D to the die joining unit 290, which will be described later. Specifically, the die transport unit 250 holds the die D, which has become loose due to the reduced adhesion force between it and the holding layer N caused by the detachment unit 240, and detaches it from the carrier C, and then transports the held die D from the first frame 211 to the second frame 212.

[0070] The die transport unit 250 receives and holds the die D on the carrier C from above. The method of holding the die D by the die transport unit 250 is arbitrary. However, since the surface Da of the die D held by the die transport unit 250 is the device surface of the device layer E, it is necessary that the die D is held by the die transport unit 250 in a manner that does not damage the device surface. For example, the die transport unit 250 may use a non-contact chuck that can hold the die D from above without contact using the Bernoulli effect or the ultrasonic squeeze effect. Alternatively, instead of holding the surface Da of the die D, the die transport unit 250 may be configured to hold the die D by clamping the side surface of the die D, which has been lifted by, for example, the supply of air.

[0071] As shown in Figure 5, the die transport unit 250 is provided with a moving mechanism 260. The moving mechanism 260 has a support part 261, an arm 262, a rail 263, and a support column 264. The support part 261 supports the die transport unit 250. The tip of the arm 262 supports the support part 261, and the base end is attached to the rail 263. The rail 263 extends in the X-axis direction and is supported by a pair of support columns 264, 264. The pair of support columns 264, 264 are supported by the first frame 211.

[0072] The die transport unit 250, support unit 261, and arm 262 are configured to be movable along the rail 263 in the X-axis direction by a drive unit (not shown). Furthermore, the die transport unit 250, support unit 261, and arm 262 are configured to be movable in the Y-axis direction by the drive unit. In addition, the die transport unit 250 and support unit 261 are configured to be movable in the vertical direction by the drive unit. The drive source for the drive unit is not particularly limited, but a linear motor, for example, can be used.

[0073] The second frame 212 is provided with a wafer holder 270, which serves as a substrate holder. As shown in Figure 6, the wafer holder 270 has the wafer W's holding surface on its lower surface and holds the wafer W from above with the wafer W's surface Wa facing downwards.

[0074] As shown in Figure 5, a moving mechanism 280 is provided in the wafer holder 270. The moving mechanism 280 has rails 281 and support columns 282. The rails 281 extend in the Y-axis direction and are provided in pairs, arranged in the X-axis direction on either side of the wafer holder 270. The pair of rails 281, 281 support the wafer holder 270. Each rail 281 is supported by a pair of support columns 282, 282. The pair of support columns 282, 282 are supported by a second frame 212.

[0075] The wafer holder 270 is configured to be movable along the rail 281 in the Y-axis direction by a drive unit (not shown). The drive source for the drive unit is not particularly limited, but a linear motor can be used, for example.

[0076] A die bonding section 290 is provided below the wafer holding section 270. The die bonding section 290 is also referred to as a bond head. As shown in Figure 6, the die bonding section 290 receives and holds the die D from the die transport section 250, and then transports the die D to the wafer W with its surface Da facing upwards, thereby bonding the die D to the wafer W. The die bonding section 290 is configured to be detachably attached to and replaceable with respect to the support section 301 of the moving mechanism 300, which will be described later.

[0077] The die joint 290 receives and holds the die D held by the die transport unit 250 from below. The method of holding the die D by the die joint 290 is arbitrary. Since the back surface Db of the die D held by the die joint 290 is a silicon layer S, the die joint 290 does not necessarily have to be constructed by a non-contact chuck or the like, unlike the die transport unit 250. For example, a vacuum chuck may be used for the die joint 290, and the die joint 290 may hold the die D by vacuuming it with a vacuum mechanism (not shown).

[0078] As shown in Figure 5, a moving mechanism 300 is provided in the die joint 290. The moving mechanism 300 has a support portion 301, a stage 302, a first rail 303, and a second rail 304. The support portion 301 supports the die joint 290. The stage 302 supports the support portion 301 on its upper surface and is attached to the first rail 303 on its lower surface. The first rail 303 extends in the X-axis direction, and both ends are attached to a pair of second rails 304, 304. The second rails 304 extend in the Y-axis direction and are provided in pairs side by side in the X-axis direction, flanking the wafer holding portion 270. The pair of second rails 304, 304 are supported by a second frame 212.

[0079] The die joint 290, support 301, and stage 302 are configured to be movable in the X-axis direction along the first rail 303 by a drive unit (not shown). Furthermore, the die joint 290, support 301, stage 302, and first rail 303 are configured to be movable in the Y-axis direction along a pair of second rails 304, 304 by a drive unit. That is, the die joint 290 is configured to be movable in the horizontal direction (X-axis and Y-axis direction). The die joint 290 is also configured to be movable in the vertical direction by a drive unit. Moreover, the die joint 290 is configured to be movable around the vertical axis (θ-axis) by a drive unit. The drive source for the drive unit is not particularly limited, but for example, a linear motor can be used.

[0080] The second mounting base 212 is provided with a first imaging unit 310, a second imaging unit 311, and a third imaging unit 312.

[0081] The first imaging unit 310 is located above the die bonding portion 290 and is provided on the wafer holding portion 270. For example, a camera is used for the first imaging unit 310. The first imaging unit 310 images at least two points on the surface Da of the die D held by the die bonding portion 290. The first imaging unit 310 is fixed and moves the die bonding portion 290 horizontally to image at least two points on the surface Da. The captured image is output to the control device 150, and the position of the die D held by the die bonding portion 290 is measured in the control device 150.

[0082] The second imaging unit 311 is located below the wafer holding unit 270 and is provided on the stage 302 of the moving mechanism 300. The second imaging unit 311 is configured to be movable horizontally (in the X-axis and Y-axis directions) and vertically by the drive unit of the moving mechanism 300.

[0083] A camera, for example, is used in the second imaging unit 311. The second imaging unit 311 images at least two points on the surface Wa of the wafer W held by the wafer holding unit 270. The die bonding unit 290 is moved horizontally, and the wafer holding unit 270 images at least two points on the surface Wa. The captured image is output to the control device 150, and the control device 150 measures the position of the wafer W held by the wafer holding unit 270.

[0084] The control device 150 adjusts the position of the die D relative to the wafer W based on the position of the die D measured using the first imaging unit 310 and the position of the wafer W measured using the second imaging unit 311. Specifically, the control device 150 controls the moving mechanism 300 to move the die D held in the die bonding unit 290, adjusting the position of the die D relative to the wafer W so that the die D is bonded to the wafer W in an appropriate position.

[0085] As described above, the position of the die D relative to the wafer W is adjusted using the first imaging unit 310 and the second imaging unit 311. However, since the first imaging unit 310 and the second imaging unit 311 move slightly over time, alignment is required at a desired timing. A glass plate 320 is used for this alignment. The glass plate 320 is provided with at least two marks 321. The glass plate 320 moves horizontally between the first imaging unit 310 and the second imaging unit 311, supported by a moving mechanism (not shown).

[0086] As shown in Figure 7, the first imaging unit 310 and the second imaging unit 311 each capture images of the mark 321 on the glass plate 320. The images captured by the first imaging unit 310 and the images captured by the second imaging unit 311 are output to the control device 150. The control device 150 aligns the first imaging unit 310 and the second imaging unit 311 so that the positions of the mark 321 in these two images coincide. Specifically, the control device 150 controls the movement mechanism 300 to align the relative horizontal positions (X-axis and Y-axis directions) and vertical (θ-axis) positions of the first imaging unit 310 and the second imaging unit 311.

[0087] As shown in Figure 5, the third imaging unit 312 is located below the wafer holding unit 270 and is provided on the stage 302 of the moving mechanism 300. The third imaging unit 312 is configured to be movable horizontally (in the X-axis and Y-axis directions) and vertically by the drive unit of the moving mechanism 300.

[0088] For example, an IR camera is used in the third imaging unit 312. The third imaging unit 312 images the die D bonded (mounted) to the wafer W from below. The captured image is output to the control device 150, where the position of the die D relative to the wafer W is measured. In other words, the control device 150 inspects the bonding accuracy of the die D to the wafer W.

[0089] Next, the configuration of the gas supply device 140 described above will be explained. Figure 4 is a plan view showing the schematic configuration of the second processing block 22, which includes the gas supply device 140. Figure 8 is an explanatory diagram schematically showing the configuration of the gas supply device 140.

[0090] As shown in Figures 4 and 8, the gas supply device 140 includes a gas adjustment unit 400, a main line 410, and branch lines 420A to 420E.

[0091] The gas adjustment unit 400 is provided in common to multiple bonding devices 130A to 130D. The gas adjustment unit 400 is equipment for adjusting the gas, and is a so-called air conditioning unit (air conditioner). The gas adjustment unit 400 adjusts at least the temperature of the gas, as well as the humidity and cleanliness of the gas. In the bonding devices 130A to 130D, it is necessary to bond the die D to the wafer W with high precision, and therefore the temperature of the internal atmosphere must be adjusted with high precision. For this reason, the gas adjustment unit 400 adjusts the temperature of the gas with high precision.

[0092] The main line 410 is connected to the gas adjustment unit 400 and is a line that circulates gas from the gas adjustment unit 400 and supplies it to the branch lines 420A to 420E.

[0093] Branch lines 420A to 420D branch off from the main line 410 and connect to the air supply sections 203A to 203D of the joining devices 130A to 130D. Branch line 420E branches off from the main line 410 and connects to the conveying device 110. Branch lines 420A to 420E are lines that circulate gas from the main line 410 and supply gas to the joining devices 130A to 130D and the conveying device 110.

[0094] Each of the branch lines 420A to 420E has an insulating structure. The insulating structure is optional, but for example, an insulating duct may be used for the branch lines 420A to 420E, or an insulating cover may be provided for the branch lines 420A to 420E. In such cases, the gas flowing through the branch lines 420A to 420E can be suppressed from being affected by thermal influences such as temperature changes in the external atmosphere (ambient atmosphere). As a result, although the gas that has been precisely temperature-controlled by the gas adjustment unit 400 flows through the branch lines 420A to 420E, the temperature of the gas can be maintained with high precision.

[0095] Branch lines 420A to 420E are provided with branch line adjustment sections 421A to 421E and branch line measurement sections 422A to 422E. Each branch line adjustment section 421A to 421E adjusts the flow rate (airflow) or pressure of the gas flowing through branch lines 420A to 420E. For example, an auto damper is used in branch line adjustment sections 421A to 421E. Each branch line measurement section 422A to 422E measures the flow rate (airflow) or pressure of the gas flowing through branch lines 420A to 420E. For example, a flow meter or a pressure gauge is used in branch line measurement sections 422A to 422E.

[0096] The gas supply device 140 has a cover 430. The cover 430 is provided so as to cover the main line 410 and the branch lines 420A to 420E. In this case, the gas flowing through the main line 410 and the branch lines 420A to 420E can be protected from thermal influences such as temperature changes in the external atmosphere. As a result, although the gas flowing through the main line 410 and the branch lines 420A to 420E has been precisely temperature-controlled by the gas adjustment unit 400, the temperature of the gas can be maintained with high precision.

[0097] The gas supply device 140 has internal temperature measuring units 440A to 440E and a main line temperature measuring unit 441. The internal temperature measuring units 440A to 440D each measure the temperature of the internal atmosphere in the chambers 200A to 200D of the joining devices 130A to 130D. The internal temperature measuring unit 440E measures the temperature of the internal atmosphere in the conveying device 110. The main line temperature measuring unit 441 measures the temperature of the gas flowing through the main line 410. Temperature sensors, for example, are used in the internal temperature measuring units 440A to 440E and the main line temperature measuring unit 441.

[0098] Next, we will explain the control method for supplying gas from the gas supply device 140 to the joining devices 130A to 130D and the conveying device 110.

[0099] First, the gas control method before processing in the processing system 1 will be described. In the control device 150, for example, one of the internal temperature measuring units 440A to 440D, internal temperature measuring unit 440A, is set as a temperature control measuring unit for controlling the gas temperature in the gas adjustment unit 400. In addition, the other internal temperature measuring units 440B to 440D, among the internal temperature measuring units 440A to 440D, are set as monitoring measuring units for monitoring the temperature of the internal atmosphere of the bonding devices 130B to 130D.

[0100] Furthermore, the control device 150 sets the gas temperature in the gas adjustment unit 400. Specifically, gas is supplied from the gas adjustment unit 400 to the joining device 130A, and the internal temperature measurement unit 440A measures the temperature of the internal atmosphere of the joining device 130A. The measurement result from the internal temperature measurement unit 440A is output to the control device 150. Based on the measurement result from the internal temperature measurement unit 440A, the control device 150 sets the gas temperature to be adjusted in the gas adjustment unit 400.

[0101] Next, the gas control method during processing in the processing system 1 will be described. In the gas adjustment unit 400, as described above, the temperature of the gas is adjusted to a temperature preset by the control device 150. The gas adjustment unit 400 also adjusts the humidity and cleanliness of the gas. From the gas adjustment unit 400, the gas is supplied to the joining devices 130A to 130D and the conveying device 110 via the main line 410 and branch lines 420A to 420E.

[0102] In the bonding apparatus 130A, the temperature of the internal atmosphere is measured by the internal temperature measuring unit 440A. The measurement result from the internal temperature measuring unit 440A is output to the control device 150. Based on the measurement result from the internal temperature measuring unit 440A, the control device 150 controls the temperature of the gas to be adjusted in the gas adjustment unit 400. Then, it supplies appropriately temperature-adjusted gas to the bonding apparatus 130A and appropriately controls the temperature of the internal atmosphere of the bonding apparatus 130A. As a result, the die D can be bonded to the wafer W with high precision in the bonding apparatus 130A.

[0103] In the bonding apparatus 130B, the temperature of the internal atmosphere is measured by the internal temperature measuring unit 440B. The measurement result from the internal temperature measuring unit 440B is output to the control device 150. Based on the measurement result from the internal temperature measuring unit 440B, the control device 150 adjusts the flow rate or pressure of the gas flowing through the branch line 420B using the branch line adjustment unit 421B. Then, it supplies appropriately temperature-controlled gas to the bonding apparatus 130B and appropriately controls the temperature of the internal atmosphere of the bonding apparatus 130B. As a result, the die D can be bonded to the wafer W with high precision in the bonding apparatus 130B.

[0104] In bonding devices 130C and 130D, the same gas control as in bonding device 130B is performed. That is, based on the measurement results of the internal temperature measurement units 440C and 440D, the branch line adjustment units 421C and 421D adjust the flow rate or pressure of the gas flowing through the branch lines 420C and 420D, thereby appropriately controlling the temperature of the internal atmosphere in bonding devices 130C and 130D. As a result, the die D can be bonded to the wafer W with high precision in bonding devices 130C and 130D.

[0105] In the conveying device 110, the same gas control as in the bonding device 130B is performed. That is, based on the measurement results of the internal temperature measuring unit 440E, the branch line adjustment unit 421E adjusts the flow rate or pressure of the gas flowing through the branch line 420E to appropriately control the temperature of the internal atmosphere of the conveying device 110. In this case, the temperature of the internal atmosphere in the bonding devices 130A to 130D adjacent to the conveying device 110 can also be appropriately controlled. Furthermore, the temperatures of the wafer W and carrier C (die D) conveyed by the conveying device 110 can also be appropriately controlled.

[0106] According to this embodiment, by appropriately controlling the temperature of the internal atmosphere of the bonding apparatus 130A to 130D and the transport apparatus 110 as described above, the die D can be bonded to the wafer W with high precision in the bonding apparatus 130A to 130D.

[0107] In conventional processing systems for manufacturing dyon wafers, high-precision gas adjustment units (air conditioning equipment) are provided for devices requiring high-precision temperature control, such as bonding devices. In other words, one gas adjustment unit is provided for each bonding device. In such cases, the cost of the processing system increases, and the footprint (occupied area) of the processing system becomes large. In this respect, according to this embodiment, the gas adjustment unit 400 is provided in common for multiple bonding devices 130A to 130D and the transport device 110, so the gas supply device 140 can be optimized. As a result, the equipment cost of the processing system 1 can be reduced, and the operating costs can also be reduced. Furthermore, the footprint of the processing system 1 can be kept small. As a result, multiple dies D can be efficiently mounted on the wafer W in the processing system 1.

[0108] In this embodiment, the internal temperature measurement unit 440A is set as the temperature control measurement unit, but the method of setting the temperature control measurement unit is arbitrary. For example, any of the other internal temperature measurement units 440B to 440D may be set as the temperature control measurement unit. Also, for example, during processing in the processing system 1, the bonding device 130A, which is equipped with the internal temperature measurement unit 440A, may be under maintenance, and the other bonding devices 130B to 130D may be in operation. In such a case, any of the internal temperature measurement units 440B to 440D may be switched and set as the temperature control measurement unit instead of the internal temperature measurement unit 440A.

[0109] Furthermore, in this embodiment, the internal temperature measurement unit 440A is set as the temperature control measurement unit, but for example, the main line temperature measurement unit 441 may be set as the temperature control measurement unit. In this case, the main line temperature measurement unit 441 measures the temperature of the gas flowing through the main line 410. The measurement result of the main line temperature measurement unit 441 is output to the control device 150. The control device 150 controls the temperature of the gas to be adjusted in the gas adjustment unit 400 based on the measurement result of the main line temperature measurement unit 441. Then, it supplies appropriately temperature-adjusted gas to the bonding devices 130A to 130D and the transport device 110, and appropriately controls the temperature of the internal atmosphere of the bonding devices 130A to 130D and the transport device 110. As a result, the die D can be bonded to the wafer W with high precision in the bonding devices 130A to 130D.

[0110] When the main line temperature measurement unit 441 is set as a temperature control measurement unit, all of the internal temperature measurement units 440A to 440E are set as monitoring measurement units for monitoring the temperature of the internal atmosphere of the joining devices 130A to 130D and the conveying device 110. The temperature of the internal atmosphere in the joining devices 130A to 130D and the conveying device 110 is measured by the internal temperature measurement units 440A to 440E. The measurement results from the internal temperature measurement units 440A to 440E are output to the control device 150. Based on the measurement results from the internal temperature measurement units 440A to 440E, the control device 150 adjusts the flow rate or pressure of the gas flowing through the branch lines 420A to 420E using the branch line adjustment units 421A to 421E. Then, it supplies appropriately temperature-controlled gas to the joining devices 130A to 130D and the conveying device 110, thereby appropriately controlling the temperature of the internal atmosphere of the joining devices 130A to 130D and the conveying device 110. As a result, the die D can be joined to the wafer W with high precision using the joining apparatus 130A to 130D.

[0111] Furthermore, during processing in the processing system 1, the flow rate or pressure of the gas flowing through the branch lines 420A to 420E is measured by the branch line measurement units 422A to 422E. The measurement results from the branch line measurement units 422A to 422E are output to the control device 150. Based on the measurement results from the branch line measurement units 422A to 422E, the control device 150 adjusts the flow rate or pressure of the gas flowing through the branch lines 420A to 420E using the branch line adjustment units 421A to 421E so that the flow rate or pressure of the gas supplied to the joining devices 130A to 130D and the conveying device 110 remains constant.

[0112] Furthermore, the control device 150 grasps the balance of gas flow rate or pressure in the branch lines 420A to 420E based on the measurement results from the branch line measurement units 422A to 422D. For example, if maintenance is performed on one bonding device 130, the balance of gas flow rate or pressure supplied to the other bonding devices 130 may be disrupted. In such cases, the branch line adjustment units 421A to 421D adjust the flow rate or pressure of the gas flowing through the branch lines 420A to 420D. As a result, the temperature of the internal atmosphere of the bonding devices 130A to 130D is appropriately controlled, and the die D can be bonded to the wafer W with high precision in the bonding devices 130A to 130D.

[0113] Next, the dion wafer manufacturing process performed in the processing system 1 configured as described above will be explained. Figure 9 is a flowchart showing the main steps of the dion wafer manufacturing process. Figure 10 is an explanatory diagram schematically showing some steps of the dion wafer manufacturing process.

[0114] First, hoops Fw and Fc, each containing multiple wafers W and carriers C respectively, are placed on the hoop mounting table 30 of the loading / unloading station 10. At this time, as shown in Figure 10(a), the wafers W are stored with their surface Wa facing upwards. Also, as shown in Figure 10(b), multiple dies D are held in the carrier C, and the surface of the carrier C (the surface Da of the die D) is stored with its surface facing upwards.

[0115] Next, the wafer W inside the hoop Fw is removed by the transport device 40 and transported to the transition stage 60. The wafer W transported to the transition stage 60 is then transported to the wafer cleaning device 100 by the transport device 50. In the wafer cleaning device 100, the surface Wa of the wafer W is cleaned, for example, with a cleaning solution (St1 in Figure 9).

[0116] Next, the wafer W is transported to the transition stage 80 by the transport device 50, and then to the wafer modification device 90 by the transport device 70. In the wafer modification device 90, plasma treatment is performed, for example, under a reduced pressure atmosphere, and the surface Wa of the wafer W is modified (St2 in Figure 9).

[0117] Next, the wafer W is transported to the transition stage 80 by the transport device 70, and then to the wafer hydrophilization device 102 by the transport device 50. In the wafer hydrophilization device 102, for example, pure water is used to attach hydroxyl groups (silanol groups) to the surface Wa of the wafer W modified with St2, thereby hydrophilizing the surface Wa. The surface Wa is also rinsed with the same pure water (St3 in Figure 9).

[0118] Next, the wafer W is transported to the transition stage 120 by the transport device 50, and then to the bonding device 130A by the transport device 110. At this time, the transport arm 113 that holds the wafer W is rotated in the transport device 110 to invert the front and back surfaces of the wafer W (St4 in Figure 9). Then, as shown in Figure 10(c), the wafer W is transported to the bonding device 130A with its back surface Wb facing upwards. If bonding processing has already been performed in the four bonding devices 130A to 130D, the wafer W is transported to the buffer device 121 and temporarily stored in the buffer device 121.

[0119] While the wafer W is undergoing the St1 to St4 processes described above, the die D held in the carrier C is processed. First, the carrier C in the hoop Fc is removed by the transport device 40 and transported to the transition stage 60. The carrier C transported to the transition stage 60 is then transported to the die cleaning device 101 by the transport device 50. In the die cleaning device 101, the surface Da of the die D is cleaned, for example, with a cleaning solution (St5 in Figure 9).

[0120] Next, carrier C is transported to the transition stage 80 by the transport device 50, and then to the die modifying device 91 by the transport device 70. In the die modifying device 91, plasma treatment is performed, for example, under a reduced pressure atmosphere, and the surface Da of die D is modified (St6 in Figure 9).

[0121] Next, carrier C is transported to the transition stage 80 by the transport device 70, and then to the die hydrophilization device 103 by the transport device 50. In the die hydrophilization device 103, for example, hydroxyl groups (silanol groups) are attached to the surface Da of die D modified with St6 by pure water, and the surface Da is made hydrophilic. The surface Da is also rinsed with the same pure water (St7 in Figure 9).

[0122] Next, carrier C is transported to the transition stage 120 by the transport device 50, and then to the joining device 130A by the transport device 110. If joining processing has already been performed in the four joining devices 130A to 130D, carrier C is transported to the buffer device 121 and temporarily stored in the buffer device 121.

[0123] As described above, the wafer W that has undergone St1 to St4 processing is transported to the bonding apparatus 130A, and the carrier C that has undergone St5 to St7 processing is also transported to the bonding apparatus 130A. In the bonding apparatus 130A, the multiple dies D held on the carrier C are bonded to the wafer W (St8 in Figure 9).

[0124] In St8, the bonding apparatus 130A transfers the wafer W from the transport arm 113 to the wafer holder 270, which is waiting at the transfer position. At this time, the wafer W is held by the wafer holder 270 from above with its surface Wa facing downwards. The wafer holder 270 is then moved to the processing position in the negative Y-axis direction. In St8, once the wafer holder 270 has moved to the processing position, it remains fixed in place and does not move from the processing position for subsequent processing.

[0125] Furthermore, in the joining device 130A, the carrier C is transferred from the transport arm 113 to the carrier holding section 230. At this time, the carrier C is held by the carrier holding section 230 from below with the surface Da of the die D facing upwards.

[0126] Next, the detachment section 240 lifts one of the multiple dies D on the carrier C held by the carrier holding section 230, which is to be joined, away from the suction surface of the carrier C.

[0127] Next, the die transport unit 250 is lowered, and the surface Da of one of the dies D to be joined, which has been lifted up, is held by the die transport unit 250. Note that the holding of the die D by the die transport unit 250 may be performed before the die D is lifted up by the release unit 240, or it may be performed at the same time as the die D is lifted up by the release unit 240. Subsequently, the die transport unit 250 is raised, and the die D is picked up from the carrier C as shown in Figures 6 and 10(d).

[0128] Next, the die transport unit 250 is moved in the positive X-axis direction to below the die joining unit 290. Subsequently, the die D is transferred from the die transport unit 250 to the die joining unit 290. At this time, as shown in Figure 5, the die D is held in the die joining unit 290 with its surface Da facing upwards.

[0129] Next, the die joint 290 is moved below the first imaging unit 310, and the first imaging unit 310 images at least two points of the die D held by the die joint 290 from above. The captured images are output to the control device 150, and the position of the die D held by the die joint 290 is measured in the control device 150.

[0130] Next, the second imaging unit 311 is moved, and at least two points of the wafer W held in the wafer holding unit 270 are imaged from below by the second imaging unit 311. The imaged images are output to the control device 150, and the control device 150 measures the position of the wafer W held in the wafer holding unit 270. Based on the position of the die D measured using the first imaging unit 310 and the position of the wafer W measured using the second imaging unit 311, the control device 150 adjusts the position of the die D relative to the wafer W (the relative position of the wafer W and the die D) so that the die D is joined to the wafer W in an appropriate position.

[0131] Next, as shown in Figures 6 and 10(e), the die bonding portion 290 is raised, and the surface Da of the die D held by the die bonding portion 290 is superimposed on the surface Wa of the wafer W, and the die D is pressed to bond the die D to the wafer W. Subsequently, the die bonding portion 290 is lowered.

[0132] In this process, the surface Wa of wafer W and the surface Da of die D are modified at St2 and St6, respectively. First, van der Waals forces (intermolecular forces) are generated between the surfaces Wa and Da, and these surfaces Wa and Da are joined together. Furthermore, since the surface Wa of wafer W and the surface Da of die D are hydrophilized at St3 and St7, respectively, the hydrophilic groups between the surfaces Wa and Da form hydrogen bonds (intermolecular forces), and the surfaces Wa and Da are firmly joined together.

[0133] As described above, the die D is bonded to the wafer W. This process of picking up the die D from the carrier C and bonding the die D to the wafer W is repeated, and multiple dies D are bonded to the wafer W and mounted as shown in Figure 10(f).

[0134] Once the die D is bonded to all desired positions on the wafer W, the third imaging unit 312 is moved, and the third imaging unit 312 images the die D mounted on the wafer W from below. The captured image is output to the control device 150, where the position of the die D relative to the wafer W is measured, and the bonding accuracy of the die D to the wafer W is inspected.

[0135] In St8, once all the dies D held in the carrier C are bonded to the wafer W, the carrier C is transported by the transport device 110 to the transition stage 120, then by the transport device 50 to the transition stage 60, and further by the transport device 40 to the hoop Fc. On the other hand, if any dies D remain in the carrier C after St8, the carrier C remains in the bonding device 130A, and the dies D may be bonded to the subsequent wafer W. Alternatively, if any dies D remain in the carrier C after St8, the carrier C may be transported by the transport device 110 to the buffer device 121 and temporarily stored in the buffer device 121.

[0136] Meanwhile, in St8, once the die D is bonded to all desired positions on the wafer W, the wafer W is transported by the transport device 110 to the transition stage 120, then by the transport device 50 to the transition stage 60, and further by the transport device 40 to the hoop Fw. In this way, the series of dion wafer manufacturing processes is completed.

[0137] Furthermore, the hoop from which the wafer W and carrier C are recovered does not necessarily have to be the same hoop that contained the wafer W and carrier C at the time of delivery. That is, for example, the hoops that contained the wafer W and carrier C may each deliver different components, or new hoops for delivering the wafer W and carrier C may be delivered to the processing system 1.

[0138] In conventional dyon wafer manufacturing processes, dies (chips) are bonded to wafers using a flip-chip mounting technique. For example, in the method described in Patent Document 1 mentioned above, a die (chip) with its surface facing upward is picked up, the front and back surfaces of the die are flipped using a flipping mechanism, and then the die with its surface facing downward is pressed onto the wafer for bonding. In this respect, according to this embodiment, in St8, the bonding apparatus 130A processes the die D with its surface Da always facing upward. That is, there is no need to perform a flipping operation of the die D as in the conventional method. Therefore, the throughput of the bonding process can be improved, and the productivity of the resulting wafer W can be increased.

[0139] Furthermore, in conventional technology, when the front and back surfaces of the die are inverted, particles are generated by this inversion operation and adhere to the wafer, affecting the wafer quality. In this respect, according to this embodiment, since the die D is not inverted in the bonding apparatus 130A at St8, particles can be reduced and adhesion to the wafer W can be suppressed. As a result, the quality of the resulting wafer W can be improved.

[0140] Furthermore, in the conventional technology, the die bonding head (bond head) that holds the die is positioned above the wafer holding section (stage) that holds the wafer. The die bonding head is then lowered to bond the die held by the die bonding head to the wafer. In this case, because the die bonding head is positioned above the wafer holding section, the rigidity of the movement mechanism for moving the die bonding head cannot be ensured, resulting in so-called Abbe error, and consequently, the bonding accuracy of the die bonding head cannot be improved. Also, because the rigidity of the movement mechanism of the die bonding head cannot be ensured, the axial acceleration and movement speed of the die bonding head cannot be increased, and the productivity of wafers cannot be improved. In this regard, according to this embodiment, the die bonding head 290 that holds the die D is positioned below the wafer holding section 270 that holds the wafer W. Then, with the wafer holding section 270 that holds the wafer W fixed, the die bonding head 290 is raised to bond the die D held by the die bonding head 290 to the wafer W. In this case, since the moving mechanism 300 for moving the die bonding portion 290 is provided on the frame 210, the rigidity of the moving mechanism 300 can be ensured and Abbe errors can be suppressed. As a result, the die bonding portion 290 can be moved with high precision, and the bonding accuracy of the die D by the die bonding portion 290 can be improved at the nano level. In addition, the axial acceleration and moving speed of the die bonding portion 290 can be increased, improving the throughput of the bonding process and increasing the productivity of the resulting wafer W.

[0141] Furthermore, in the conventional technology, since the die bonding portion is positioned above the wafer holding portion, particles are generated when the die bonding portion is moved by the moving mechanism and may adhere to the wafer positioned below. In such cases, the quality of the wafer is affected. In this respect, according to this embodiment, the wafer holding portion 270 is positioned above the die bonding portion 290, and when the die D is bonded to the wafer W, the wafer holding portion 270 does not move and remains fixed. Therefore, the generation of particles from the wafer holding portion 270 and its moving mechanism 280 can be suppressed. In addition, the generation of particles generated by the moving mechanism 300 of the die bonding portion 290 can be reduced, and the adhesion of particles to the wafer W positioned above can be suppressed. As a result, the quality of the wafer W that becomes the product can be improved.

[0142] According to this embodiment, since the frame 210 is provided with a vibration damping mechanism 220, the frame 210 can be vibration-damped, and furthermore, each part provided on the frame 210 can also be vibration-damped. In this case, for example, the movement accuracy of the movement mechanism 260 of the die transport section 250 can be improved, and the positional accuracy when transferring the die D from the die transport section 250 to the die joining section 290, that is, the holding accuracy of the die D in the die joining section 290 can be improved. In addition, the movement accuracy of the movement mechanism 300 of the die joining section 290 can be improved, and the joining accuracy of the die D by the die joining section 290 can be improved.

[0143] In the embodiments described above, multiple dies D held on a carrier C as a die carrier were bonded to a wafer W for mounting. However, the method of mounting the dies D to the wafer W is not limited to this. For example, multiple dies D held on a tape frame P as a die carrier may be bonded to a wafer W for mounting.

[0144] As shown in Figure 11, the tape frame P has a frame F and a tape T. The frame F has an annular shape and is made of, for example, stainless steel. The tape T is fixed to the back surface of the frame F. The surface of the tape T is adhesive, and a plurality of dies D are held on the surface (adhesive surface) of the tape T. The tape T holds the silicon layer S on the back surface Db side of the dies D.

[0145] Figure 12 is a schematic diagram illustrating some steps of the dion wafer manufacturing process in this embodiment. In this embodiment, a processing system (not shown) having the same apparatus configuration as processing system 1 is used to bond and mount multiple dies D held on a carrier C to a wafer W. In this processing system, the apparatus that processes the dies D held on the carrier C in processing system 1 processes the dies D held on a tape frame P.

[0146] In the processing system according to this embodiment, the surface Wa of the wafer W is sequentially cleaned (St1), modified (St2), hydrophilized, and rinsed (St3). At this time, as shown in Figure 12(a), the wafer W is processed with the surface Wa facing upwards. Next, the wafer W is inverted (St4), and as shown in Figure 12(b), the back surface Wb is facing upwards and transported to the bonding apparatus 130.

[0147] Furthermore, the surface Da of the die D held on the tape frame P is sequentially cleaned (St5), modified (St6), hydrophilized, and rinsed (St7). During this process, as shown in Figure 12(c), the die D is processed with its surface Da facing upwards while still held on the tape frame P. Note that in steps St5 to St7, the carrier C is replaced by the tape frame P, but the actual processing is essentially the same.

[0148] Next, in St8, the multiple dies D held in the tape frame P are bonded to the wafer W. In the bonding apparatus 130, as shown in Figure 12(d), the dies D are picked up from the tape frame P, and then the dies D are bonded to the wafer W as shown in Figure 12(e). This process of picking up the dies D from the tape frame P and placing the dies D on the wafer W is repeated, and multiple dies D are bonded to the wafer W and mounted as shown in Figure 12(f).

[0149] In this embodiment as well, the same effects as in the above embodiment can be enjoyed. That is, the die carrier that holds the die D is arbitrary, and a carrier C may be used, or a tape frame P may be used.

[0150] In the dyon wafer manufacturing process, multiple types of dies D may be mounted on multiple wafers W. Alternatively, multiple types of dies D may be mounted on a single wafer W. The types of dies D vary, and for example, they may include dies D with different required bonding accuracies. For instance, a die D1 with a circuit or other device formed on it requires high bonding accuracy (hereinafter, such a die may be referred to as "high-precision die D1"), while a die D2 without a circuit or other device formed on it requires low bonding accuracy (hereinafter, such a die may be referred to as "low-precision die D2").

[0151] In the processing system 1 of the above embodiment, multiple types of dies D, such as high-precision dies D1 and low-precision dies D2, may be bonded to the wafer W. In this case, for example, as shown in Figure 13, among the four bonding devices 130A to 130D, high-precision bonding devices 130A and 130B bond multiple high-precision dies D1 to the wafer W, and low-precision bonding devices 130C and 130D bond multiple low-precision dies D2 to the wafer W.

[0152] When bonding multiple high-precision dies D1 to a wafer W, high bonding accuracy is required. For this reason, a gas supply device 140 is connected to the high-precision bonding apparatuses 130A and 130B, and the gas supply device 140 supplies gas with high precision temperature control to the high-precision bonding apparatuses 130A and 130B.

[0153] On the other hand, when bonding multiple low-precision dies D2 to a wafer W, high bonding precision is not required. For this reason, the gas supply device 140 is not connected to the low-precision bonding apparatuses 130C and 130D, and gas may be supplied from, for example, a fan filter unit (FFU).

[0154] As described above, the gas supply device 140 may be provided in the bonding device 130 depending on the required bonding accuracy. In this case, the processing system 1 can be simplified, the equipment cost can be reduced, and the operating cost can also be reduced. Furthermore, the footprint of the processing system 1 can be kept small. As a result, multiple dies D can be efficiently mounted on the wafer W in the processing system 1.

[0155] The number and arrangement of the high-precision joining devices 130 and low-precision joining devices 130 are not limited to this embodiment. For example, the processing system 1 may have eight joining devices 130, including four high-precision joining devices 130 and four low-precision joining devices 130.

[0156] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the constituent elements of the embodiments described above can be combined in any way. Such any combination will naturally yield the functions and effects of each constituent element in the combination, as well as other functions and effects that will be apparent to those skilled in the art from the description herein.

[0157] Furthermore, the effects described herein are merely descriptive or illustrative and not limiting. In other words, the technology relating to this disclosure may produce other effects that will be apparent to those skilled in the art from the description herein, in addition to or in lieu of the effects described herein.

[0158] 1 Processing System 130A-130D Bonding Equipment 140 Gas Supply Equipment 400 Gas Adjustment Unit C Carrier D Die P Tape Frame W Wafer

Claims

1. A processing system for mounting multiple dies onto a substrate, comprising: a plurality of bonding devices for bonding the dies held in a die carrier to the substrate; and a gas supply device for supplying gas to the plurality of bonding devices, wherein the gas supply device is provided in common to the plurality of bonding devices and has at least a gas adjustment unit for adjusting the temperature of the gas.

2. The processing system according to claim 1, comprising a control device, wherein the gas supply device has an internal temperature measuring unit for measuring the temperature of the internal atmosphere inside the joining device, and the control device performs the following actions: setting the internal temperature measuring unit provided in one of the plurality of joining devices as a temperature control measuring unit, and controlling the temperature of the gas to be adjusted in the gas adjustment unit based on the measurement result of the temperature control measuring unit.

3. The processing system according to claim 2, wherein the gas supply device comprises a main line connected to the gas adjustment unit and through which the gas flows, branch lines branching off from the main line and connected to a plurality of the joining devices and through which the gas flows, and a branch line adjustment unit that adjusts the flow rate or pressure of the gas flowing through the branch lines, and the control device performs control to adjust the flow rate or pressure of the gas flowing through the branch lines by the branch line adjustment unit based on the measurement results of the internal temperature measuring unit other than the temperature control measuring unit.

4. The processing system according to claim 1, comprising a control device, wherein the gas supply device comprises a main line connected to the gas adjustment unit and through which the gas flows, branch lines branching from the main line and connected to a plurality of the joining devices and through which the gas flows, and a main line temperature measuring unit for measuring the temperature of the gas flowing through the main line, and the control device performs control to control the temperature of the gas to be adjusted in the gas adjustment unit based on the measurement result of the main line temperature measuring unit.

5. The processing system according to claim 4, wherein the gas supply device comprises an internal temperature measuring unit for measuring the temperature of the internal atmosphere of the joining device, and a branch line adjustment unit for adjusting the flow rate or pressure of the gas flowing through the branch line, and the control device performs control to adjust the flow rate or pressure of the gas flowing through the branch line by the branch line adjustment unit based on the measurement result of the internal temperature measuring unit.

6. The processing system according to claim 1, comprising a control device, wherein the gas supply device comprises: a main line connected to the gas adjustment unit and through which the gas flows; branch lines branching from the main line and connected to a plurality of the joining devices and through which the gas flows; a branch line adjustment unit for adjusting the flow rate or pressure of the gas flowing through the branch lines; and a branch line measuring unit for measuring the flow rate or pressure of the gas flowing through the branch lines, wherein the control device performs control to adjust the flow rate or pressure of the gas flowing through the branch lines by the branch line adjustment unit based on the measurement results of the branch line measuring unit.

7. The processing system according to claim 1, wherein the gas supply device has a main line connected to the gas adjustment unit and through which the gas flows, and branch lines branching off from the main line and connected to a plurality of the joining devices and through which the gas flows, and the branch lines have an insulating structure.

8. The processing system according to claim 1, wherein the gas supply device comprises: a main line connected to the gas adjustment unit and through which the gas flows; branch lines branching off from the main line and connected to a plurality of the joining devices and through which the gas flows; and a cover covering the main line and the branch lines.

9. The processing system according to claim 1, wherein a plurality of bonding devices have a transport device for transporting the die carrier and the substrate, the bonding device has an air supply unit provided at a position opposite to the transport device for supplying the gas from the gas supply device into the bonding device, and the gas flows inside the bonding device from the air supply unit side toward the transport device side.

10. The processing system according to claim 1, wherein the plurality of joining devices include a plurality of high-precision joining devices having relatively high joining accuracy and a plurality of low-precision joining devices having relatively low joining accuracy, and the gas supply device supplies the gas to the plurality of high-precision joining devices.

11. The processing system according to claim 1, wherein a plurality of bonding devices have a transport device for transporting the die carrier and the substrate, and the gas supply device supplies the gas to the transport device.

12. A processing method for mounting multiple dies onto a substrate, comprising: adjusting the temperature of at least a gas using a gas adjustment unit of a gas supply device; supplying the gas whose temperature has been adjusted by the gas adjustment unit from the gas supply device to multiple bonding devices; and bonding the dies held on die carriers to the substrate in the bonding devices, wherein the gas adjustment unit is provided in common to the multiple bonding devices.

13. The processing method according to claim 12, comprising: measuring the temperature of the internal atmosphere of the joining device using an internal temperature measuring unit of the gas supply device; setting the internal temperature measuring unit provided in one of the plurality of joining devices as a temperature control measuring unit; and controlling the temperature of the gas to be adjusted in the gas adjustment unit based on the measurement result of the temperature control measuring unit.

14. The processing method according to claim 13, comprising: supplying the gas from the gas adjustment unit to a plurality of joining devices via a main line connected to the gas adjustment unit and branch lines branching from the main line and connected to a plurality of joining devices; and adjusting the flow rate or pressure of the gas flowing through the branch lines by a branch line adjustment unit of the gas supply device based on the measurement results of the internal temperature measurement unit other than the temperature control measurement unit.

15. The processing method according to claim 12, comprising: supplying the gas from the gas adjustment unit to a plurality of joining devices via a main line connected to the gas adjustment unit and branch lines branching from the main line and connected to a plurality of joining devices; measuring the temperature of the gas flowing through the main line with a main line temperature measuring unit of the gas supply device; and controlling the temperature of the gas to be adjusted in the gas adjustment unit based on the measurement result of the main line temperature measuring unit.

16. The processing method according to claim 15, comprising: measuring the temperature of the internal atmosphere of the bonding device using an internal temperature measuring unit of the gas supply device; and adjusting the flow rate or pressure of the gas flowing through the branch line using a branch line adjustment unit of the gas supply device based on the measurement result of the internal temperature measuring unit.

17. The processing method according to claim 12, comprising: supplying the gas from the gas adjustment unit to a plurality of joining devices via a main line connected to the gas adjustment unit and branch lines branching from the main line and connected to a plurality of joining devices; measuring the flow rate or pressure of the gas flowing through the branch lines using a branch line measuring unit of the gas supply device; and adjusting the flow rate or pressure of the gas flowing through the branch lines using a branch line adjustment unit of the gas supply device based on the measurement result of the branch line measuring unit.

18. The processing method according to claim 12, comprising transporting the die carrier and the substrate to a plurality of bonding devices by a transport device, wherein the bonding device is provided at a position opposite to the transport device and has an air supply unit that supplies the gas from the gas supply device into the interior of the bonding device, and the gas flows inside the bonding device from the air supply unit side toward the transport device side.

19. The processing method according to claim 12, wherein the plurality of joining devices include a plurality of high-precision joining devices having relatively high joining accuracy and a plurality of low-precision joining devices having relatively low joining accuracy, and the processing method includes supplying the gas from the gas supply device to the plurality of high-precision joining devices.

20. The processing method according to claim 12, comprising: transporting the die carrier and the substrate to a plurality of bonding devices by a transport device; and supplying the gas from the gas supply device to the transport device.

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