Substrate processing device and temperature control method

Abstract

Disclosed is a substrate processing device comprising a member that is a target of temperature control, a heating mechanism for the member, a cooling mechanism for the member, a temperature sensor, and a temperature control unit. The temperature control unit includes a PID computation part, a feedforward control part, and a synthesis part. The PID computation unit is configured to acquire a first operation amount, by a PID computation and from an error between the set value of the temperature of the member and the measured value of the temperature of the member that has been acquired by the temperature sensor. The feedforward control part is configured to specify a second operation amount corresponding to a disturbance heat input amount with respect to the member. The synthesis part is configured to output, to the heating mechanism and / or the cooling mechanism, a synthesis operation amount which is obtained by synthesizing the first operation amount and the second operation amount.

Description

Substrate processing apparatus and temperature control method

[0001] Exemplary embodiments of this disclosure relate to a substrate processing apparatus and a temperature control method.

[0002] Plasma processing equipment is used in processing substrates. The plasma processing equipment comprises a chamber and a substrate support section. The substrate support section is provided within the chamber. A capacitively coupled plasma processing equipment, which is a type of plasma processing equipment, further comprises an upper electrode. Patent Document 1 below discloses a plasma processing equipment comprising an upper electrode having a refrigerant flow path and a heater disposed within the upper electrode. The temperature of the upper electrode is controlled by the refrigerant supplied to the refrigerant flow path and the heater.

[0003] Japanese Patent Publication No. 2022-143369

[0004] This disclosure provides a technology to improve the responsiveness of temperature control of components in a substrate processing apparatus.

[0005] In one exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus includes a chamber, a member, a heating mechanism for the member, a cooling mechanism for the member, a temperature sensor, and a temperature control unit. The member is a temperature-controlled object and is located in the chamber. The temperature sensor is configured to acquire temperature measurements of the member. The temperature control unit is connected to the heating mechanism and the cooling mechanism. The temperature control unit includes a PID calculation unit, a feedforward control unit, and a synthesis unit. The PID calculation unit is configured to identify a first manipulated variable by a PID calculation that synthesizes a proportional output proportional to the error between the temperature measurement acquired by the temperature sensor and the temperature setpoint of the member, an integral output proportional to the integral of the error, and a differential output proportional to the differential of the error. The feedforward control unit is configured to identify a second manipulated variable corresponding to the amount of heat intrusion into the member from the heating mechanism and the cooling mechanism. The synthesis unit is configured to output a combined manipulated variable, obtained by synthesizing the first manipulated variable and the second manipulated variable, to the heating mechanism and / or the cooling mechanism for control of the heating mechanism and / or the cooling mechanism.

[0006] According to one exemplary embodiment, it is possible to improve the responsiveness of temperature control of components in a substrate processing apparatus.

[0007] This is a diagram illustrating an example configuration of a plasma processing system. This is a diagram illustrating an example configuration of a capacitively coupled plasma processing apparatus. This is a diagram showing a configuration related to temperature control in a substrate processing apparatus according to one exemplary embodiment. This is a diagram showing an example configuration of a temperature control unit in a substrate processing apparatus according to one exemplary embodiment. This is a diagram showing an example of a table. This is a diagram showing a configuration related to temperature control in a substrate processing apparatus according to another exemplary embodiment. This is a diagram showing an example of a voltage pulse sequence. This is a diagram showing an example of the time variation of the amount of heat input in disturbance. This is a flowchart of a temperature control method according to one exemplary embodiment.

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings. In each drawing, the same or corresponding parts will be denoted by the same reference numerals.

[0009] Figure 1 is a diagram illustrating an example configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20, which will be described later, and the gas outlet is connected to an exhaust system 40, which will be described later. The substrate support unit 11 is located in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR plasma (Electron-Cyclotron-Resonance Plasma), helicon wave excited plasma (HWP), or surface wave plasma (SWP), etc. Furthermore, various types of plasma generation units may be used, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described herein. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or it may be obtained via a medium when needed. The obtained program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The memory unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0012] The following describes an example configuration of a capacitively coupled plasma processing apparatus as an example of a plasma processing apparatus 1. Figure 2 is a diagram illustrating an example configuration of a capacitively coupled plasma processing apparatus.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is located inside the plasma processing chamber 10. The shower head 13 is located above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side walls 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is placed on the central region 111a of the main body portion 111, and the ring assembly 112 is placed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also called the substrate support surface for supporting the substrate W, and the annular region 111b is also called the ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is placed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b placed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may also have an annular region 111b. In this case, the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode, which will be coupled to the RF power supply 31 and / or DC power supply 32 described later, may be placed within the ceramic member 1111a. In this case, at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or DC signal, described later, is supplied to at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and at least one RF / DC electrode may function as multiple lower electrodes. Also, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one covering ring. The edge rings are formed of a conductive or insulating material, and the covering rings are formed of an insulating material.

[0017] The substrate support section 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a refrigerant flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the refrigerant flow path 1110a. In one embodiment, the refrigerant flow path 1110a is formed within the base 1110, and one or more heaters are arranged within the ceramic member 1111a of the electrostatic chuck 1111. The substrate support section 11 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0018] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through the plurality of gas inlet ports 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0019] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas to the shower head 13 from a corresponding gas source 21 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of at least one processing gas.

[0020] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This causes plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power supply 31 can function as at least part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ionic components in the formed plasma can be drawn into the substrate W.

[0021] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. One or more generated source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generation unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. One or more generated bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] Furthermore, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generation unit 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0024] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generation unit for generating a sequence of voltage pulses from the DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Thus, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses may have positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generation units 32a and 32b may be provided in addition to the RF power supply 31, and the first DC generation unit 32a may be provided in place of the second RF generation unit 31b.

[0025] The exhaust system 40 may be connected to, for example, a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0026] In the plasma processing apparatus 1, the first RF generation unit 31a may continuously supply the source RF signal to the high-frequency electrode, or it may periodically supply pulses of the source RF signal to the high-frequency electrode in a repeating first pulse period. The high-frequency electrode may be the lower electrode or the upper electrode as described above. Power level L of the source RF signal ＨＦ and the duty cycle D of the pulse of the source RF signal ＨＦ This can be specified by the control unit 2 to the first RF generation unit 31a. Note that the duty cycle D of the pulse of the source RF signal ＨＦ This represents the proportion of time within each first pulse period during which the source RF signal pulse is in the ON state.

[0027] Also, in the plasma processing apparatus 1, the bias power supply 34 may supply an electrical bias to the bias electrode in order to draw ions from the plasma in the chamber 10 to the substrate W on the substrate support portion 11. The bias power supply 34 may continuously supply the electrical bias to the bias electrode, or may periodically supply the pulse of the electrical bias to the bias electrode in the repeated second pulse period. The bias electrode may be the lower electrode described above. Alternatively, the bias electrode may be provided in the electrostatic chuck 1111. The second pulse period may be synchronized with the first pulse period and may have the same time length as the time length of the first pulse period.

[0028] The bias power supply 34 may be the second RF generation unit 31b described above. In this case, the electrical bias is a bias RF signal. In this case, the level L ＥＢ , that is, the power level of the bias RF signal and the duty ratio D ＥＢ of the pulse of the electrical bias can be specified from the control unit 2 to the second RF generation unit 31b. Note that the duty ratio D ＥＢ of the pulse of the electrical bias is the ratio occupied by the period during which the pulse of the electrical bias is in the ON state within each second pulse period.

[0029] Alternatively, the bias power supply 34 may include the first DC generation unit 32a. In this case, the electrical bias is a sequence of voltage pulses generated periodically. In this case, the level L ＥＢ of the electrical bias, that is, the voltage level L ＶＰ of each voltage pulse, the duty ratio D ＶＰ of each voltage pulse, and the duty ratio D ＥＢ of the pulse of the electrical bias can be specified from the control unit 2 to the bias power supply 34 including the first DC generation unit 32a. Note that the voltage level L ＶＰ is the absolute value of the voltage level of each voltage pulse when each voltage pulse has a negative polarity. Also, the duty ratio D ＶＰ of the voltage pulse is the ratio occupied by the period during which the voltage pulse is in the ON state in the bias period which is the time interval at which the voltage pulse is generated.

[0030] In one embodiment, the plasma processing apparatus may further include a bias power supply 35 (see Figure 3). The bias power supply 35 is a power supply similar to the bias power supply 34. The bias power supply 35 may be configured to generate an electrical bias that differs from the electrical bias generated by the bias power supply 34 only in terms of its level. The level L of the electrical bias generated by the bias power supply 35 ＥＢ２ The control unit 2 specifies the bias power supply 35. In this case, the electrostatic chuck 1111 may include bias electrodes BEc and BEe. Bias electrode BEc is located below the substrate support surface, and bias electrode BEe is located below the ring support surface. Bias power supply 34 supplies an electrical bias or an electrical bias pulse to bias electrode BEc. Bias power supply 35 supplies an electrical bias or an electrical bias pulse to bias electrode BEe.

[0031] Furthermore, in the plasma processing apparatus 1, the second DC generation unit 32b may periodically and pulsely change the level of the voltage applied to the upper electrode during the repeating modulation period. In this case, the modulation period includes a first partial period and a second partial period. The level of the voltage applied from the second DC generation unit 32b to the upper electrode during the first partial period is the first level L ＴＨＶ１ Therefore, the level of the voltage applied to the upper electrode from the second DC generation unit 32b during the second partial period is the first level L ＴＨＶ１ A different second level L ＴＨＶ２ This is the first level L. ＴＨＶ１ and the second level L ＴＨＶ２ Each of these may be the absolute value of a negative voltage level, and the first level L ＴＨＶ１ This is the second level L ＴＨＶ２ It can be larger. Level 1 L ＴＨＶ１ , Level 2 L ＴＨＶ２ , and the proportion of the first partial period that occupies the modulation period, i.e., the first level L ＴＨＶ１ The duty cycle D of the voltage ＴＨＶ This is specified by the control unit 2 to the second DC generation unit 32b.

[0032] The following refers to Figure 3. Figure 3 is a diagram showing a configuration related to temperature control in a substrate processing apparatus according to one exemplary embodiment. The plasma processing apparatus 1 may further include an upper electrode 14 as an upper electrode constituting the shower head 13 described above. The upper electrode 14 may have at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c.

[0033] In one embodiment, the upper electrode 14 may further include a top plate 141 and a support 142. The top plate 141 extends above the plasma processing space 10s and is in contact with the processing space 10s. The top plate 141 may be formed from a conductive material such as silicon or aluminum. The support 142 is positioned on the top plate 141 and supports the top plate 141. The support 142 may be formed from a metal such as aluminum. At least one gas diffusion chamber 13b may be located within the support 142. In addition, a plurality of gas inlets 13c may be formed across the top plate 141 and the support 142.

[0034] The upper electrode 14 may provide a refrigerant channel 14f within it. The refrigerant channel 14f may be formed within the support 142. A refrigerant such as brine is supplied to the refrigerant channel 14f from the chiller unit 51u. The refrigerant flows through the refrigerant channel 14f and is returned to the chiller unit 51u.

[0035] The plasma processing apparatus 1 further includes a heating mechanism 50 and a cooling mechanism 51. In one embodiment, the heating mechanism 50 and the cooling mechanism 51 are provided to adjust the temperature of a temperature-controlled component placed in the chamber 10. In one embodiment, the plasma processing apparatus 1 may include an upper electrode 14 as the temperature-controlled component. The heating mechanism 50 may include a heater 50h and a heater controller 50c. The cooling mechanism 51 may include a refrigerant flow path 14f, a chiller unit 51u, and a flow rate controller 51c.

[0036] The heater 50h is configured to heat the upper electrode 14. The heater 50h may include a resistance heating element or it may be a sheet heater. The heater 50h may be placed on the support 142 as shown in Figure 3. Alternatively, the heater 50h may be provided inside the upper electrode 14.

[0037] The heater controller 50c has a control input, and a first control variable C is applied to the control input. Ｈ The system is configured to control the power (e.g., AC power) supplied to the heater 50h accordingly. By controlling the power supplied to the heater 50h, the amount of heat generated by the heater 50h is adjusted, thereby adjusting the temperature of the upper electrode 14.

[0038] The heater controller 50c may supply power to the heater 50h in a repeating cycle. Each cycle includes an ON period in which power is supplied to the heater 50h and an OFF period in which the power supply to the heater 50h is stopped. The heater controller 50c controls the first control variable C Ｈ The power supplied to the heater 50h may be controlled by adjusting the proportion of the ON period in each cycle, i.e., the duty cycle. In this case, the heater controller 50c may include a relay. The relay may be a semiconductor relay such as a solid-state relay, or a mechanical relay. The heater controller 50c can adjust the duty cycle by switching the electrical circuit of the relay ON (i.e., conducting) and OFF (i.e., not conducting). Alternatively, the heater controller 50c may control the first control variable C Ｈ The power level of the electricity supplied to heater 50h may be adjusted accordingly.

[0039] The flow controller 51c is connected between the chiller unit 51u and the refrigerant flow path 14f. The flow controller 51c receives a second control quantity C as its control input. Ａ The chiller unit 51u is configured to adjust the flow rate of refrigerant supplied to the refrigerant flow path 14f accordingly. The flow rate controller 51c adjusts the flow rate of refrigerant supplied to the refrigerant flow path 14f, thereby adjusting the temperature of the upper electrode 14. The flow rate controller 51c controls the second control amount C ＡIt may also be a flow control valve configured to adjust the flow rate of the refrigerant output by adjusting its opening degree accordingly.

[0040] The plasma processing apparatus 1 further includes a temperature sensor 52 and a temperature control unit 60. The temperature sensor 52 is configured to acquire temperature measurements of the component to be temperature controlled as described above. In one embodiment, the temperature sensor 52 is configured to measure the temperature of the upper electrode 14 and acquire a temperature measurement indicating that temperature. The temperature sensor 52 may also be configured to measure the temperature of, for example, the support 142. The temperature sensor 52 may be a contact-type temperature sensor or a non-contact-type temperature sensor.

[0041] The temperature control unit 60 is connected to the heating mechanism 50 and the cooling mechanism 51, and is configured to control the heating mechanism 50 and the cooling mechanism 51. Hereinafter, Figure 4 will be referred to in conjunction with Figure 3. Figure 4 shows an example of the configuration of a temperature control unit in a substrate processing apparatus according to one exemplary embodiment.

[0042] As shown in Figure 4, the temperature control unit 60 includes a PID calculation unit 62, a feedforward control unit 63, and a synthesis unit 65. The temperature control unit 60 may further include a subtraction unit 61, a storage unit 64, a multiplication unit 66, and a multiplication unit 67. The temperature control unit 60 may consist of at least one processing circuit that constitutes these elements of the temperature control unit 60 other than the storage unit 64. The at least one processing circuit may consist of a processor, an ASIC, an FPGA, a programmable logic device, or other electrical circuit. Each of these elements of the temperature control unit 60 other than the storage unit 64 may consist of a dedicated electrical circuit. The storage unit 64 includes a storage device such as a memory device or a hard disk.

[0043] The control unit 2 and the temperature sensor 52 are connected to the input of the subtraction unit 61. The temperature set value T from the control unit 2 is input to the subtraction unit 61. Ｓ and temperature measurement T from temperature sensor 52 Ｍ A temperature set value T is given. ＳThis value represents the set temperature of the component whose temperature is controlled as described above (in one embodiment, the upper electrode 14). The subtraction unit 61 subtracts the temperature set value T Ｓ and temperature measurement T Ｍ The difference calculation between the two results in the temperature set value T Ｓ and temperature measurement T Ｍ Error e between ｒ It is configured to identify.

[0044] The output of the subtraction unit 61 is connected to the input of the PID calculation unit 62. The PID calculation unit 62 calculates the error e ｒ By performing PID calculations in PID control on the first manipulated variable u ＭＶ It is configured to identify the error e. ｒ A proportional output proportional to the error e ｒ The integral output is proportional to the integral value of, and the error e ｒ The first manipulated variable u is generated by a PID operation that synthesizes differential outputs proportional to the differential value of u. ＭＶ It is configured to identify.

[0045] The feedforward control unit 63 controls a second operating amount Δ corresponding to the amount of heat intrusion into the temperature-controlled component (upper electrode 14 in one embodiment) from sources other than the heating mechanism 50 and the cooling mechanism 51. ＭＶ It is configured to identify the amount of heat intrusion. In one embodiment, the feedforward control unit 63 may identify the amount of heat intrusion using a predetermined function that includes one or more control parameters of the plasma processing apparatus 1 that affect the amount of heat intrusion as variables.

[0046] In one embodiment, one or more control parameters used in the feedforward control unit 63 to determine the amount of heat intrusion are the power level L of the source RF signal. ＨＦ and the level L of the electrical bias ＥＢ It may include at least one of the following. In addition, one or more control parameters are the duty cycle D of the pulse of the source RF signal as described above. ＨＦ The duty cycle D of the electrical bias pulses generated by bias power supply 34 and bias power supply 35, respectively. ＥＢThe duty cycle D of the voltage pulses constituting the electrical bias generated by bias power supply 34 and bias power supply 35, respectively. ＶＰ , the level L of the electrical bias generated by the bias power supply 35 ＥＢ２ , Level 1 L ＴＨＶ１ , Level 2 L ＴＨＶ２ , the duty cycle D of the first level voltage ＴＨＶ , as well as the measured pressure P inside the chamber 10 obtained by the pressure sensor 54 Ｍ It may further include at least one selected from the group consisting of the following.

[0047] In one example, the heat input A ＨＩＮ The function used in the feedforward control unit 63 for the identification of is defined by the following equations (1) and (2). A ＨＩＮ = P ＲＦ +P ＲＦ ×f １ (P Ｍ ) + f ２ (e ｒ ) + p ... (1) P ＲＦ = f ３ (L ＥＢ , D ＥＢ , D ＶＰ , L ＨＦ , D ＨＦ ) + f ４ (L ＥＢ２ ) + f ５ (L ＴＨＶ１ , L ＴＨＶ２ , D ＴＨＶ ) ... (2) In equation (1), p is a constant. p can be determined empirically. Also, the function f １ , f ２ , f ３ , f ４ , f ５ This can be determined empirically.

[0048] The feedforward control unit 63 then controls a second manipulated variable Δ corresponding to the identified disturbance heat input. ＭＶ To identify the second manipulated amount Δ by referring to a table stored in the storage unit 64. ＭＶIdentify. FIG. 5 is a diagram showing an example of a table. As shown in FIG. 5, the table in the storage unit 64 has a plurality of records each including an external disturbance heat input amount and a second operation amount corresponding to the external disturbance heat input amount. The external disturbance heat input amounts in each of the plurality of records are different from each other. The feedforward control unit 63 identifies the record including the external disturbance heat input amount identified as described above from the table, and uses the second operation amount in the identified record as the second operation amount Δ ＭＶ to identify. The feedforward control unit 63 outputs the identified second operation amount Δ ＭＶ to the synthesis unit 65.

[0049] The inputs to the synthesis unit 65 are connected to the output of the PID calculation unit 62 and the output of the feedforward control unit 63. The synthesis unit 65 is configured to identify a synthesized operation amount u ＭＶ by performing an operation (sum operation) of synthesizing the first operation amount u ＭＶ and the second operation amount Δ Ｃ . The synthesized operation amount u Ｃ is outputted towards the heating mechanism 50 and / or the cooling mechanism 51.

[0050] The multiplication unit 66 is configured to identify a first control amount C Ｃ by performing a product operation of the synthesized operation amount u Ｈ and a first coefficient. The first control amount C Ｈ is given as the control input to the heater controller 50c. The multiplication unit 67 is configured to identify a second control amount C Ｃ by performing a product operation of the synthesized operation amount u Ａ and a second coefficient. The second control amount C Ａ is given as the control input to the flow rate controller 51c.

[0051] In the plasma processing apparatus 1 described above, when external disturbance heat input occurs to the member to be temperature-controlled, a second operation amount Δ ＭＶ corresponding to the external disturbance heat input amount is added to the first operation amount u ＭＶ obtained by PID calculation, and a synthesized operation amount u Ｃ is obtained. The heating mechanism 50 and the cooling mechanism 51 respectively have a first control amount C Ｃ corresponding to this synthesized operation amount u Ｈ and a second control amount CＡ It is controlled accordingly. Therefore, the plasma processing apparatus 1 improves the responsiveness of temperature control to external heat intrusion into the component whose temperature is to be controlled.

[0052] In one embodiment, the combining unit 65 may include an adding unit 65a and a distribution unit 65b, as shown in Figure 4. The adding unit 65a controls the first operating amount u ＭＶ and the second control variable Δ ＭＶ The sum operation with the composite control variable u Ｃ It is configured to identify the combined operating amount u. Ｃ It is configured to output to the heating mechanism 50 and / or the cooling mechanism 51.

[0053] In one embodiment, the synthesis unit 65 or the distribution unit 65b controls the synthesis operation amount u Ｃ The first control amount C may be continuously output to both the heating mechanism 50 and the cooling mechanism 51. In this case, the heating mechanism 50 and the cooling mechanism 51 each control the first control amount C. Ｈ , second control variable C Ａ It is constantly controlled accordingly. In this case, since both the heating mechanism 50 and the cooling mechanism 51 are controlled, the transient overshoot and / or undershoot of the temperature change of the component due to temperature control when external heat intrusion occurs to the component subject to temperature control is greatly suppressed. In this case, due to the supply of refrigerant from the cooling mechanism 51 to the component subject to temperature control, the temperature that the component subject to temperature control can reach becomes relatively low.

[0054] In another embodiment, the synthesis unit 65 or the distribution unit 65b controls the synthesis operation amount u Ｃ The system may be configured to alternately output the combined operating amount u to the heating mechanism 50 and the cooling mechanism 51. For example, when external heat intrusion occurs to the target component, the combined operating amount u is first directed to the heating mechanism 50. Ｃ The output is generated, and the heating mechanism 50 controls the first control amount C Ｈ The first controlled variable C may be controlled accordingly. Ｈ The first control variable C can be set. Ｈ When it reaches its minimum value, the combined operating amount u is directed toward the cooling mechanism 51. Ｃ The output is generated, and the cooling mechanism 51 controls the second control amount C ＡIt may be controlled accordingly. After that, the temperature of the component to be temperature controlled is set to a temperature setpoint T Ｓ To get closer to it, the composite operation variable u Ｃ The first control quantity C is alternately output to the heating mechanism 50 and the cooling mechanism 51. Ｈ Control of the heating mechanism 50 and the second control amount C Ａ The cooling mechanism 51 may be controlled alternately. In this case as well, it is possible to suppress the transient overshoot and / or undershoot of the temperature change of the component when external heat intrusion occurs into the component subject to temperature control. In this case, the temperature that the component subject to temperature control can reach will be relatively high.

[0055] In yet another embodiment, the synthesis unit 65 or the distribution unit 65b controls the synthesis operation amount u Ｃ Based on this, the first control quantity C is given to the input of the heating mechanism 50 (i.e., the control input of the heater controller 50c). Ｈ Until the synthesis operation amount u falls below the threshold, Ｃ The output may be directed only to the heating mechanism 50. Synthesis operation amount u Ｃ If the output is directed only towards the heating mechanism 50, the cooling mechanism 51 is not controlled, and the first controlled amount C Ｈ In accordance with this, only the heating mechanism 50 is controlled. This threshold is a first control variable C that can be given to the input of the heating mechanism 50 (i.e., the control input of the heater controller 50c). Ｈ The value is smaller than the maximum value, for example, about 80% of the maximum value. Similarly, the combining unit 65 or the distributing unit 65b controls the combining operation amount u Ｃ Based on this, a second control amount C is given to the input of the cooling mechanism 51 (i.e., the control input of the flow controller 51c). Ａ Until the synthesis operation amount u exceeds the threshold, Ｃ The output may be directed only to the cooling mechanism 51. Combined manipulated amount u Ｃ If the output is directed only towards the cooling mechanism 51, the heating mechanism 50 is not controlled, and the second control amount C Ａ In accordance with this, only the cooling mechanism 51 is controlled. Also, the combining unit 65 or the distribution unit 65b controls the first control amount C Ｈ After the point in time when the synthesis operation amount u falls below the threshold, ＣThe output may be directed towards both the heating mechanism 50 and the cooling mechanism 51. Synthesis operation amount u Ｃ When the output is directed towards both the heating mechanism 50 and the cooling mechanism 51, the heating mechanism 50 and the cooling mechanism 51 each control the first control amount C Ｈ , second control variable C Ａ It is controlled accordingly. In this case as well, it is possible to significantly suppress the transient overshoot and / or undershoot of the temperature change of the component when external heat intrusion occurs into the component being temperature-controlled. In addition, in this case, the temperature that the component being temperature-controlled can reach becomes relatively high.

[0056] The following will refer to Figures 6 to 8. Figure 6 is a diagram showing a configuration related to temperature control in a substrate processing apparatus according to another exemplary embodiment. Figure 7 is a diagram showing an example of the configuration of a temperature control unit in a substrate processing apparatus according to another exemplary embodiment. Figure 8 is a diagram showing an example of a voltage pulse sequence. The embodiments shown in Figures 6 and 7 will be described below in terms of differences from the embodiments shown in Figures 3 and 4.

[0057] Each of the bias power supplies 34 and 35 may be configured to periodically generate voltage pulses as an electrical bias, that is, to generate a sequence of voltage pulses. As shown in Figure 8, the bias power supply 34 generates a voltage pulse VP ３４ This is generated periodically. As shown in Figure 6, the bias power supply 34 may include a DC power supply 34p and a pulse unit 34s. The DC power supply 34p is a variable DC power supply. Voltage pulse VP ３４ The voltage level is adjusted by controlling the voltage level of the output voltage of the DC power supply 34p. The DC power supply 34p is connected to the bias electrode BEc via a pulse unit 34s. When a negative voltage pulse is applied to the bias electrode BEc as an electrical bias from the bias power supply 34, the negative terminal of the DC power supply 34p is connected to the bias electrode BEc via the pulse unit 34s. The pulse unit 34s includes a switching element, and the switching element opens and closes the voltage pulse VP from the output voltage of the DC power supply 34p. ３４ Generates a voltage pulse VP. ３４The generation period and duty cycle are adjusted by controlling the switching element of the pulse unit 34s.

[0058] As shown in Figure 8, the bias power supply 35 has a voltage pulse VP ３５ This is generated periodically. As shown in Figure 6, the bias power supply 35 may include a DC power supply 35p and a pulse unit 35s. The DC power supply 35p is a variable DC power supply. Voltage pulse VP ３５ The voltage level is adjusted by controlling the voltage level of the output voltage of the DC power supply 35p. The DC power supply 35p is connected to the bias electrode BEe via a pulse unit 35s. When a negative voltage pulse is applied to the bias electrode BEe as an electrical bias from the bias power supply 35, the negative terminal of the DC power supply 35p is connected to the bias electrode BEe via the pulse unit 35s. The pulse unit 35s includes a switching element, and by opening and closing the switching element, a voltage pulse VP is generated from the output voltage of the DC power supply 35p. ３５ Generates a voltage pulse VP. ３５ The generation period and duty cycle are adjusted by controlling the switching element of the pulse unit 35s.

[0059] In one embodiment, voltage pulse VP ３４ Voltage level and voltage pulse VP ３５ Each of the voltage levels may remain constant from the start to the end of the process. Alternatively, as shown in Figure 8, the voltage pulse VP ３４ Voltage level, voltage pulse VP ３５ The voltage levels of each have a period C from the start to the end of the process. ３４ , period C ３５ It may be changed periodically.

[0060] Period C ３４ This consists of N subperiods P ３４ This includes the period C in the example in Figure 8. ３４ This is the sub-period P ３４１ ~P ３４Ｎ It includes N subperiods P. ３４ Voltage pulse VP in each case ３４ The voltage levels are different from each other. In the following explanation, voltage level LＶ３４ｎ is period C ３４ Sub-period P ３４ｎ Voltage pulse VP ３４ This represents the measured absolute value of the voltage level and the current level L. ｉ３４ｎ is period C ３４ Sub-period P ３４ｎ Voltage pulse VP ３４ This represents the measured current level. Also, the duty cycle D ３４ｎ is period C ３４ Subperiod P relative to the duration ３４ｎ This represents the ratio of the durations of the subperiod P. ３４ｎ Voltage level L Ｖ３４ｎ , current level L ｉ３４ｎ , duty cycle D ３４ｎ In this notation, "n" refers to the subperiod P ３４ｎ Period C ３４ This indicates the order within the period. For example, subperiod P ３４１ In this case, "n" is 1.

[0061] Also, period C ３５ This consists of N subperiods P ３５ Includes period C. ３５ is period C ３４ It is synchronized with N subperiods P. ３５ Each of these has N subperiods P ３４ It may be synchronized with the corresponding subperiod. In the example in Figure 8, period C ３５ This is the sub-period P ３５１ ~P ３５Ｎ It includes N subperiods P. ３５ Voltage pulse VP in each case ３５ The voltage levels are different from each other. In the following explanation, voltage level L Ｖ３５ｎ is period C ３５ Sub-period P ３５ｎ Voltage pulse VP ３５ This represents the measured absolute value of the voltage level. Current level L ｉ３５ｎ is period C ３５ Sub-period P ３５ｎ Voltage pulse VP ３５ This represents the measured current level. Also, the duty cycle D ３５ｎ is period C ３５ Subperiod P relative to the duration３５ｎ This represents the ratio of the durations of the subperiod P. ３５ｎ Voltage level L Ｖ３５ｎ , current level L ｉ３５ｎ , duty cycle D ３５ｎ In this notation, "n" refers to the subperiod P ３５ｎ Period C ３５ This indicates the order within the period. For example, subperiod P ３５１ In this case, "n" is 1.

[0062] In the embodiments shown in Figures 6 and 7, the feedforward control unit 63 controls the voltage level L Ｖ３４ｎ and current level L ｉ３４ｎ The above-mentioned amount of heat intrusion is determined from this. The feedforward control unit 63 further determines the duty cycle D ３４ｎ The amount of heat intrusion may be determined from the voltage level L. Ｖ３５ｎ and current level L ｉ３５ｎ The amount of heat intrusion may be determined from this. The feedforward control unit 63 further controls the duty cycle D ３５ｎ The amount of heat intrusion may be determined from this.

[0063] In the embodiments shown in Figures 6 and 7, the current sensor 34i measures the current level in the electrical path that electrically connects the DC power supply 34p and the pulse unit 34s. The voltage sensor 34v measures the voltage pulse VP in the electrical path that electrically connects the pulse unit 34s and the bias electrode BEc. ３４ The voltage level is measured. In addition, the current sensor 35i measures the current level in the electrical path that electrically connects the DC power supply 35p and the pulse unit 35s. In addition, the voltage sensor 35v measures the voltage pulse VP in the electrical path that electrically connects the pulse unit 35s and the bias electrode BEe. ３５ Measure the voltage level.

[0064] The feedforward control unit 63 calculates the voltage level L from the voltage level measured by the voltage sensor 34v. Ｖ３４ｎ The feedforward control unit 63 identifies the current level L from the current level measured by the current sensor 34i. ｉ３４ｎThe feedforward control unit 63 identifies the voltage level L from the voltage level measured by the voltage sensor 35V. Ｖ３５ｎ The feedforward control unit 63 identifies the current level L from the current level measured by the current sensor 35i. ｉ３５ｎ Identify.

[0065] Voltage level L at each sampling point Ｖ３４ｎ This may be the absolute value of the voltage level measured by the voltage sensor 34V at each sampling time. Alternatively, it may be the voltage level L at each sampling time. Ｖ３４ｎ This may be a moving median value obtained from the absolute value of the voltage level measured by the voltage sensor 34v at each sampling time and the absolute values ​​of the voltage level measured by the voltage sensor 34v at a predetermined number of sampling times before and after. Also, the current level L at each sampling time. ｉ３４ｎ This may be the current level measured by the current sensor 34i at each sampling time. Alternatively, it may be the current level L at each sampling time. ｉ３４ｎ The current level L may be a moving median value obtained from the current level measured by the current sensor 34i at each sampling time and the current levels measured by the current sensor 34i at a predetermined number of sampling times before and after. ｉ３４ｎ This is the voltage level L Ｖ３４ｎ However, the voltage level L mentioned above Ｖ３４ｎ The current level may also be the current level measured by the current sensor 34i at the point where the movement reaches its midpoint.

[0066] Also, the voltage level L at each sampling point. Ｖ３５ｎ This may be the absolute value of the voltage level measured by the voltage sensor 35V at each sampling time. Alternatively, it may be the voltage level L at each sampling time. Ｖ３５ｎ This may be a moving median value obtained from the absolute value of the voltage level measured by the voltage sensor 35V at each sampling time and the absolute values ​​of the voltage level measured by the voltage sensor 35V at a predetermined number of sampling times before and after. Also, the current level L at each sampling time. ｉ３５ｎThis may be the current level measured by the current sensor 35i at each sampling time. Alternatively, it may be the current level L at each sampling time. ｉ３５ｎ The current level L may be a moving median value obtained from the current level measured by the current sensor 35i at each sampling time and the current levels measured by the current sensor 35i at a predetermined number of sampling times before and after that time. ｉ３５ｎ This is the voltage level L Ｖ３５ｎ However, the voltage level L mentioned above Ｖ３５ｎ The current level may also be the current level measured by the current sensor 35i at the point where the movement reaches its midpoint.

[0067] In the embodiments shown in Figures 6 and 7, the feedforward control unit 63 controls the voltage level L at each sampling time. Ｖ３４ｎ , current level L ｉ３４ｎ Voltage level L Ｖ３５ｎ , current level L ｉ３５ｎ , duty cycle D ３４ｎ , and duty cycle D ３５ｎ By using the following equation (3) as a variable, the heat input A of the disturbance can be calculated. ＨＩＮ You may specify it. In equation (3), p ３４ｎ , p ３５ｎ Each of these is a predetermined coefficient, p Ｎ＋１ f is a predetermined constant. ３４ｎ ( ) is L Ｖ３４ｎ and L ｉ３４ｎ and D ３４ｎ It is a function that includes the product of the voltage pulse VP. ３４ If the voltage level of remains constant from the start to the end of the process, then in equation (3), N is 1 and D ３４ｎ , that is, D ３４１ It is also 1. Voltage pulse VP ３４ If the voltage level changes multiple times, for example M times, from the start to the end of the process, then in equation (3), N is M and D ３４ｎ The value of "n" ranges from 1 to M. Also, f ３５ｎ ( ) is L Ｖ３５ｎ and L ｉ３５ｎ and D ３５ｎ It is a function that includes the product of the voltage pulse VP. ３５If the voltage level of remains constant from the start to the end of the process, then N is 1 and D ３５ｎ , that is, D ３５１ It is also 1. Voltage pulse VP ３５ If the voltage level changes multiple times, for example M times, from the start to the end of the process, then in equation (3), N is M and D ３５ｎ The "n" in the equation ranges from 1 to M. The feedforward control unit 63 calculates the disturbance heat A from the above-mentioned variables obtained at each sampling point from the start to the end of the process using equation (3). ＨＩＮ You may update it.

[0068] Now, refer to Figure 9. Figure 9 shows an example of the time variation of the amount of heat input from an external disturbance. In the example in Figure 9, heat input occurs to the component whose temperature is to be controlled at time t1. For example, at time t1, the source RF signal, voltage pulse VP ３４ The sequence and voltage pulse VP ３５ The supply of the sequence is initiated. The feedforward control unit 63 can determine time t1 by the signal from the control unit 2. The feedforward control unit 63 determines the amount of heat intrusion A ＨＩＮ The output of the second manipulated variable ΔMV obtained from this to the synthesis unit 65 may be started from time t1.

[0069] Alternatively, the feedforward control unit 63 controls the voltage level L Ｖ３４ｎ , current level L ｉ３４ｎ Voltage level L Ｖ３５ｎ , and current level L ｉ３５ｎ At least one of these may start outputting the second manipulated variable ΔMV to the synthesis unit 65 from time t2, when the threshold is first reached after time t1.

[0070] Alternatively, the feedforward control unit 63 controls the voltage level L Ｖ３４ｎ , current level L ｉ３４ｎ Voltage level L Ｖ３５ｎ , and current level L ｉ３５ｎ At least one of these may start outputting the second manipulated variable ΔMV to the synthesis unit 65 from time t3, when it first reaches the set value after the overshoot following time t1. In this case, the amount of heat intrusion A during the overshoot ＨＩＮSince the second manipulated amount ΔMV can be applied to the synthesis unit 65 without using the method described above, the temperature control of the component to be temperature controlled can be stabilized.

[0071] Alternatively, the feedforward control unit 63 may start outputting the second manipulated variable ΔMV to the synthesis unit 65 from time t4, which is a predetermined delay time after time t1, time t2, or time t3. The length of the predetermined delay time is not limited. For example, the length of the predetermined delay time is set so that time t4 is a time after the overshoot of the intrusion heat. In this case, the intrusion heat A at the time of overshoot ＨＩＮ Since the second manipulated amount ΔMV can be applied to the synthesis unit 65 without using the method described above, the temperature control of the component to be temperature controlled can be stabilized.

[0072] Furthermore, the feedforward control unit 63 controls the voltage level L Ｖ３４ｎ , current level L ｉ３４ｎ Voltage level L Ｖ３５ｎ , and current level L ｉ３５ｎ The process of determining at least one of these as the moving median described above is performed during the period P between time point t1 and time point t5 after the first set time from time point t1. Ｍ１ , the period P between time point t2 and time point t5, which is a second set time after time point t2. Ｍ２ , the period P between time point t3 and time point t5, which is a third set time after time point t3. Ｍ３ , or the period P between time point t4 and time point t5 after a fourth set time from time point t4. Ｍ４ It may be continued in that case.

[0073] Furthermore, the feedforward control unit 63 controls the period P that starts from time t5. Ｆ In this case, the second manipulated variable ΔMV, which is determined at time t5 or immediately before time t5, may be set as a fixed value and given to the synthesis unit 65. In this case, the temperature control of the component to be temperature controlled can be stabilized. Note that period P Ｆ The process ends at time t6. At time t6, the process switches from a process in which heat is input to the temperature-controlled component to a process in which no heat is input to the temperature-controlled component. For example, at time t6, the source RF signal, voltage pulse VP ３４The sequence and voltage pulse VP ３５ The supply of the sequence is stopped. The process in which no heat input occurs to the temperature-controlled component is the period P that starts at time t6. Ｕ The process continues in this state. The feedforward control unit 63 can determine time t6 by a signal from the control unit 2. The feedforward control unit 63 determines the period P that starts at time t6. Ｕ In this case, the second control variable ΔMV may be set to zero, or it may not be supplied to the combining unit 65.

[0074] Voltage level L Ｖ３４ｎ and current level L ｉ３４ｎ The product of and / or the voltage level L Ｖ３５ｎ and current level L ｉ３５ｎ The product of these two factors has a high correlation with the amount of heat intrusion into the component whose temperature is being controlled. Therefore, according to the embodiments in Figures 6 and 7 in which the amount of heat intrusion is determined based on equation (3), the responsiveness of temperature control of the components of a substrate processing apparatus such as the plasma processing apparatus 1 can be improved.

[0075] Furthermore, the feedforward control unit 63 controls the voltage level L Ｖ３４ｎ , current level L ｉ３４ｎ Voltage level L Ｖ３５ｎ , and current level L ｉ３５ｎ By determining at least one of these as the moving median mentioned above, we can obtain the variables for equation (3) with the influence of disturbances suppressed.

[0076] The following describes a temperature control method according to one exemplary embodiment, with reference to Figure 10. Figure 10 is a flowchart of the temperature control method according to one exemplary embodiment. The temperature control method shown in Figure 10 (hereinafter referred to as "Method MT") is applied to a substrate processing apparatus such as a plasma processing apparatus 1. The following describes Method MT using the example of applying Method MT to the plasma processing apparatus 1 and controlling the temperature of the upper electrode 14 as the component to be controlled. Note that Method MT may also be applied to a component of the plasma processing apparatus 1 other than the upper electrode 14, or to a component of a substrate processing apparatus other than the plasma processing apparatus 1, as the component to be controlled.

[0077] As shown in Figure 10, method MT starts in process STa. In process STa, the temperature measurement T of the upper electrode 14 is measured. Ｍ and the temperature set value T of the upper electrode 14 Ｓ Error e between ｒ However, as mentioned above, it is identified. In the subsequent process STb, the error e ｒ Based on the above PID calculation, the first manipulated variable u ＭＶ However, as described above, it is identified. In the subsequent step STc, the amount of heat intrusion into the upper electrode 14 is identified, and a second manipulated amount Δ corresponding to the identified amount of heat intrusion is determined. ＭＶ However, as described above, it is specified. In the subsequent step STd, the synthesis amount u Ｃ However, as mentioned above, the first manipulated variable u ＭＶ and the second control variable Δ ＭＶ It is determined by combining and. In the subsequent step STe, the synthesis operation amount u Ｃ However, as described above, the output is directed towards the heating mechanism 50 and / or the cooling mechanism 51 for the purpose of controlling the heating mechanism 50 and / or the cooling mechanism 51.

[0078] Method MT may further include process STf and process STg. In process STf, the first controlled variable C Ｈ and / or a second controlled variable C Ａ However, as mentioned above, the composite manipulation variable u Ｃ It is determined based on the following. In process STg, the first controlled variable C Ｈ and / or a second controlled variable C Ａ The output is the first controlled variable C. Ｈ When this is applied to the heating mechanism 50, the first controlled quantity C Ｈ The temperature of the upper electrode 14 is adjusted by the heating mechanism 50 accordingly. Second control amount C Ａ When this is applied to the cooling mechanism 51, the second control amount C Ａ The temperature of the upper electrode 14 is adjusted by the cooling mechanism 51 accordingly.

[0079] Method MT may further include process STJ. In process STJ, it is determined whether or not a stop condition is met. The stop condition is a condition for stopping Method MT. The stop condition is, for example, the first control variable C described above. Ｈ and / or a second controlled variable CＡ The decision is made based on a threshold. If the stop condition is not met, the process from step STA is repeated. On the other hand, if the stop condition is met, method MT is terminated.

[0080] Although various exemplary embodiments have been described above, the invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and modifications may be made. Furthermore, it is possible to combine elements from different embodiments to form other embodiments.

[0081] For example, the substrate processing apparatus to which the contents of this disclosure apply may be a substrate processing apparatus other than the plasma processing apparatus 1.

[0082] Furthermore, the component whose temperature is controlled may be any component of the substrate processing apparatus, as long as it includes a heating element such as a heater and a cooling element such as a refrigerant flow path. For example, the component whose temperature is controlled may be the wall of the chamber 10. Alternatively, as shown in Figure 3, if the substrate support 11 includes a heater 11h, the temperature of the substrate support 11 may be controlled as the component whose temperature is controlled. In this case, the temperature of the substrate support 11 can be controlled by a heating mechanism 50 or another similar heating mechanism, a cooling mechanism 51 or another similar cooling mechanism, and a temperature control unit 60 or another similar temperature control unit. Note that the heater 11h may be located inside the electrostatic chuck 1111.

[0083] Herein, various exemplary embodiments included in this disclosure are described in [E1] to [E11] below.

[0084] [E1] A substrate processing apparatus comprising: a chamber; a member to be temperature controlled, disposed within the chamber; a heating mechanism for the member; a cooling mechanism for the member; a temperature sensor configured to acquire temperature measurements of the member; and a temperature control unit connected to the heating mechanism and the cooling mechanism, wherein the temperature control unit includes: a PID calculation unit configured to identify a first manipulated variable by PID calculation that synthesizes a proportional output proportional to the error between the temperature measurement acquired by the temperature sensor and the temperature setpoint of the member, an integral output proportional to the integral value of the error, and a differential output proportional to the differential value of the error; a feedforward control unit configured to identify a second manipulated variable corresponding to the amount of heat intrusion into the member from the heating mechanism and the cooling mechanism; and a synthesis unit configured to output a combined manipulated variable obtained by synthesizing the first manipulated variable and the second manipulated variable toward the heating mechanism and / or the cooling mechanism for the control of the heating mechanism and / or the cooling mechanism.

[0085] [E2] The substrate processing apparatus according to E1, wherein the synthesis unit is configured to output the synthesis operation amount only to the heating mechanism until the control amount given to the input of the heating mechanism based on the synthesis operation amount falls below a threshold lower than the maximum value of the control amount that can be given to the input of the heating mechanism, and then, after the control amount given to the input of the heating mechanism falls below the threshold, output the synthesis operation amount to both the heating mechanism and the cooling mechanism.

[0086] [E3] The substrate processing apparatus according to E1, wherein the synthesis unit is configured to constantly output the synthesis amount to both the heating mechanism and the cooling mechanism.

[0087] [E4] The substrate processing apparatus according to E1, wherein the synthesis unit is configured to alternately output the synthesis amount to the heating mechanism and the cooling mechanism.

[0088] [E5] The substrate processing apparatus according to any one of E1 to E4, wherein the temperature control unit further includes a storage unit configured to store a table having a plurality of records, each including an intrusion heat amount and a second operation amount corresponding to the intrusion heat amount, and the feedforward control unit is configured to identify the second operation amount corresponding to the intrusion heat amount to the member from the heating mechanism and the cooling mechanism by referring to the table, and to output the identified second operation amount to the synthesis unit.

[0089] [E6] The substrate processing apparatus is a plasma processing apparatus, further comprising: a high-frequency electrode electrically coupled to an RF generating unit that generates a source RF signal to generate plasma in the chamber; and a substrate support unit provided in the chamber and configured to support a substrate placed thereon, the substrate support unit including an electrode electrically coupled to a bias power supply that generates an electrical bias for drawing ions from the plasma, wherein the feedforward control unit is configured to determine the amount of intrusive heat from at least one of the power level of the source RF signal and the level of the electrical bias, as described in any one of E1 to E5.

[0090] [E7] The substrate processing apparatus according to E6, wherein the member is an upper electrode positioned above the substrate support portion.

[0091] [E8] The substrate processing apparatus according to E6, wherein the member is the substrate support portion.

[0092] [E9] The substrate processing apparatus according to any one of E1 to E8, wherein the heating mechanism includes a heater and a heater controller, the heater controller has a control input and is configured to control the power supplied to the heater according to a first control amount given to the control input, and the temperature control unit is configured to output the first control amount, which is the product of the combined operation amount and a predetermined first coefficient, to the control input of the heater controller.

[0093] [E10] The substrate processing apparatus according to any one of E1 to E9, wherein the member includes a refrigerant flow path, the cooling mechanism includes a flow controller connected between the refrigerant flow path and a chiller, the flow controller has a control input and is configured to adjust the flow rate of refrigerant supplied from the chiller to the refrigerant flow path according to a second control amount given to the control input of the flow controller, and the temperature control unit is configured to output the second control amount, which is the product of the combined operation amount and a predetermined second coefficient, to the control input of the flow controller.

[0094] [E11] A temperature control method comprising: a step of identifying an error between a temperature measurement value of a component to be temperature controlled, which is placed in a chamber of a substrate processing apparatus, and a temperature set value of the component; a step of identifying a first manipulated variable by PID calculation that synthesizes a proportional output proportional to the error, an integral output proportional to the integral value of the error, and a differential output proportional to the differential value of the error; a step of identifying a second manipulated variable corresponding to the amount of heat intrusion into the component from other sources, such as a heating mechanism for the component and a cooling mechanism for the component; a step of identifying a combined manipulated variable by synthesizing the first manipulated variable and the second manipulated variable; and a step of outputting the combined manipulated variable toward the heating mechanism and / or the cooling mechanism for the control of the heating mechanism and / or the cooling mechanism.

[0095] From the above description, it will be understood that the various embodiments of this disclosure are described herein for illustrative purposes and can be modified in various ways without departing from the scope and spirit of this disclosure. Accordingly, the various embodiments disclosed herein are not intended to limit the scope and spirit, and the true scope and spirit are shown by the appended claims.

[0096] 1...Plasma processing apparatus, 10...Chamber, 11...Substrate support section, 14...Upper electrode, 50...Heating mechanism, 51...Cooling mechanism, 52...Temperature sensor, 60...Temperature control section, 62...PID calculation unit, 63...Feedforward control section.

Claims

1. A substrate processing apparatus comprising: a chamber; a member to be temperature controlled, disposed within the chamber; a heating mechanism for the member; a cooling mechanism for the member; a temperature sensor configured to acquire temperature measurements of the member; and a temperature control unit connected to the heating mechanism and the cooling mechanism, wherein the temperature control unit includes: a PID calculation unit configured to identify a first manipulated variable by PID calculation that synthesizes a proportional output proportional to the error between the temperature measurement acquired by the temperature sensor and the temperature setpoint of the member, an integral output proportional to the integral value of the error, and a differential output proportional to the differential value of the error; a feedforward control unit configured to identify a second manipulated variable corresponding to the amount of heat intrusion into the member from the heating mechanism and the cooling mechanism; and a synthesis unit configured to output a combined manipulated variable obtained by synthesizing the first manipulated variable and the second manipulated variable toward the heating mechanism and / or the cooling mechanism for the purpose of controlling the heating mechanism and / or the cooling mechanism.

2. The substrate processing apparatus according to claim 1, wherein the synthesis unit is configured to output the synthesis operation amount only to the heating mechanism until the control amount given to the input of the heating mechanism based on the synthesis operation amount falls below a threshold lower than the maximum value of the control amount that can be given to the input of the heating mechanism, and then, after the control amount given to the input of the heating mechanism falls below the threshold, output the synthesis operation amount to both the heating mechanism and the cooling mechanism.

3. The substrate processing apparatus according to claim 1, wherein the synthesis unit is configured to continuously output the synthesis amount to both the heating mechanism and the cooling mechanism.

4. The substrate processing apparatus according to claim 1, wherein the synthesis unit is configured to alternately output the synthesis amount to the heating mechanism and the cooling mechanism.

5. The substrate processing apparatus according to any one of claims 1 to 4, wherein the temperature control unit further includes a storage unit configured to store a table having a plurality of records, each including an intrusive heat amount and a second operation amount corresponding to the intrusive heat amount, and the feedforward control unit is configured to identify the second operation amount corresponding to the intrusive heat amount to the member from the heating mechanism and the cooling mechanism by referring to the table, and to output the identified second operation amount to the synthesis unit.

6. The substrate processing apparatus is a plasma processing apparatus, further comprising: a high-frequency electrode electrically coupled to an RF generating unit that generates a source RF signal to generate plasma in the chamber; and a substrate support unit provided in the chamber and configured to support a substrate placed thereon, the substrate support unit including an electrode electrically coupled to a bias power supply that generates an electrical bias for drawing ions from the plasma, wherein the feedforward control unit is configured to determine the amount of intrusive heat from at least one of the power level of the source RF signal and the level of the electrical bias, according to any one of claims 1 to 4.

7. The substrate processing apparatus according to claim 6, wherein the member is an upper electrode positioned above the substrate support portion.

8. The substrate processing apparatus according to claim 6, wherein the member is the substrate support portion.

9. The substrate processing apparatus according to any one of claims 1 to 4, wherein the heating mechanism includes a heater and a heater controller, the heater controller has a control input and is configured to control the power supplied to the heater according to a first control amount given to the control input, and the temperature control unit is configured to output the first control amount, which is the product of the combined operation amount and a predetermined first coefficient, to the control input of the heater controller.

10. The substrate processing apparatus according to any one of claims 1 to 4, wherein the member includes a refrigerant flow path, the cooling mechanism includes a flow rate controller connected between the refrigerant flow path and a chiller, the flow rate controller has a control input and is configured to adjust the flow rate of refrigerant supplied from the chiller to the refrigerant flow path according to a second control amount given to the control input of the flow rate controller, and the temperature control unit is configured to output the second control amount, which is the product of the combined operation amount and a predetermined second coefficient, to the control input of the flow rate controller.

11. A temperature control method comprising: a step of identifying an error between a temperature measurement value of a temperature-controlled component placed in a chamber of a substrate processing apparatus and a temperature setpoint of the component; a step of identifying a first manipulated variable by PID calculation that synthesizes a proportional output proportional to the error, an integral output proportional to the integral value of the error, and a differential output proportional to the differential value of the error; a step of identifying a second manipulated variable corresponding to the amount of heat intrusion into the component from other sources, such as a heating mechanism and a cooling mechanism for the component; a step of identifying a combined manipulated variable by synthesizing the first manipulated variable and the second manipulated variable; and a step of outputting the combined manipulated variable toward the heating mechanism and / or the cooling mechanism for the control of the heating mechanism and / or the cooling mechanism.

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