Hybrid NV-quantum-sensor-type lithium-ion battery internal-space temperature and pressure sensing and control apparatus and method, comprising battery temperature sensing NV quantum sensor and battery pressure sensing NV quantum sensor

Abstract

The present invention relates to a hybrid NV-quantum-sensor-type lithium-ion battery internal-space temperature and pressure sensing and control apparatus and method, comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, the battery internal-space temperature and pressure sensing and control apparatus coming in contact with the outer surface of a lithium ion battery so as to sense and control the current temperature and pressure of the internal space of the lithium ion battery through spin changes of quantum dots centered on NV composed of nitrogen atoms and vacancy defects within a diamond lattice structure.

Description

Hybrid NV Quantum Sensor Type Lithium-ion Battery Internal Space Temperature and Pressure Sensing Control Device and Method Composed of Battery Temperature Sensing NV Quantum Sensor and Battery Pressure Sensing NV Quantum Sensor

[0001] The present invention relates to a hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing and control device and method, which is compatible with and installed in a lithium-ion battery for electric vehicles, and more specifically, is in contact with the outer surface of a lithium-ion battery and can sense and control the current internal space temperature and pressure of the lithium-ion battery through a spin change of a quantum dot centered on a nitrogen atom and a vacancy defect within a diamond lattice structure.

[0002] The performance and safety of lithium-ion batteries in electric vehicles depend heavily on their condition regarding temperature and pressure. In particular, thermal runaway caused by overheating can lead to battery cell failure and explosion, requiring accurate condition detection and rapid response to prevent this. Existing battery monitoring systems primarily rely on temperature sensors to detect and respond to thermal runaway by sensing only the external surface temperature of the lithium-ion battery; however, they have limitations in predicting early signs of thermal runaway, such as pressure changes, and in preventing it. Furthermore, while immediate cooling and heat dissipation are required when thermal runaway occurs, existing systems have been unable to adequately perform these functions.

[0003] To solve the above problems, the present invention comprises a battery temperature sensing NV quantum sensor unit configured on the outer surface of a lithium-ion battery, thereby enabling the detection of a battery internal space temperature ranging from -50°C to +150°C through photon or fluorescence signal sensing regarding the internal space temperature of the lithium-ion battery; a first multi-channel pulse waveform generation control module and a second multi-channel pulse waveform generation control module configured to perform photon sensing operations regarding the battery internal space temperature and battery internal space pressure with high precision; a battery pressure sensing NV quantum sensor unit configured on another outer surface of the lithium-ion battery, thereby enabling the detection of strain (strain ε) generated by battery internal space pressures ranging from 25KPa to 40MPa through photon or fluorescence signal sensing regarding strain (strain ε) generated by battery internal space pressures; and an intelligent battery control module configured to detect the internal space temperature range of the lithium-ion battery from -50°C to 150°C and pressure based on the ODMR spectrum A hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device and method comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor is provided, which can detect even minute changes within a range of 25KPa to 40MPa and take action, and can rapidly cool the battery surface air cooling module drive control unit in the event of thermal runaway, thereby ensuring the safety of the lithium-ion battery and preventing the thermal runaway from spreading to other lithium-ion batteries.

[0004] To achieve the above objective, the hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device, comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor according to the present invention, is configured to contact the outer surface of the lithium-ion battery and to sense and control the current internal space temperature and pressure of the lithium-ion battery through the spin change of a quantum dot centered on an NV, which is composed of nitrogen atoms and vacancy defects within the lattice structure of diamond.

[0005] First, by configuring a battery temperature sensing NV quantum sensor unit on the outer surface of a lithium-ion battery, it is possible to detect the internal space temperature of the battery from -50 degrees to +150 degrees through photon or fluorescence signal sensing regarding the internal space temperature of the lithium-ion battery, operate stably within a wide frequency range from DC to 10 GHz, maintain consistent performance even in a multi-channel environment, and improve sensor sensitivity and accuracy by 80% by minimizing signal distortion while maintaining sensitivity in various frequency bands through dynamic frequency and cross-coupling control.

[0006] Second, by configuring the first multi-channel pulse waveform generation control module and the second multi-channel pulse waveform generation control module, the scalability of complex quantum systems can be maximized, allowing for the simultaneous processing of more quantum dot qubits and providing a faster response speed than existing technologies with a trigger-output delay of less than 50 ns. Additionally, by precisely controlling the interaction between quantum dot qubits, highly complex quantum computation tasks and photon sensing tasks regarding battery internal space temperature and battery internal space pressure can be performed with high precision, improved by 80% compared to existing methods.

[0007] Third, by configuring a battery pressure sensing NV quantum sensor unit on the outer surface of another lithium-ion battery, it is possible to detect strain (strain, ε) caused by the internal space pressure of the battery from 25KPa to 40MPa through photon or fluorescence signal sensing regarding strain (strain, ε) caused by the internal space pressure of the battery, operate stably within a wide frequency range from DC to 10GHz, maintain consistent performance even in a multi-channel environment, and improve sensor sensitivity and accuracy by 80% by minimizing signal distortion while maintaining sensitivity in various frequency bands through dynamic frequency and cross-coupling control.

[0008] Fourth, by configuring an intelligent battery control module, it is possible to detect and take action on even minute changes within the internal space temperature range of -50°C to 150°C and pressure range of 25KPa to 40MPa of the lithium-ion battery based on the ODMR spectrum, thereby enabling real-time monitoring of the lithium-ion battery and reducing battery explosions and fires by 60% or less compared to conventional methods. Furthermore, in the event of thermal runaway, rapid cooling can be achieved through the battery surface air cooling module drive control unit, thereby ensuring the safety of the lithium-ion battery and preventing the spread of thermal runaway to other lithium-ion batteries.

[0009] FIG. 1 is a block diagram illustrating the components of a hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor according to the present invention.

[0010] FIG. 2 is a configuration diagram illustrating the components of a hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor according to the present invention.

[0011] FIG. 3 is a block diagram illustrating the components of a battery temperature sensing NV quantum sensor module according to the present invention,

[0012] FIG. 4 is a configuration diagram illustrating a component formed in a rectangular shape with a layered structure in contact with the outer surface of one side of a lithium-ion battery and a component formed by modularization inside the module space of an intelligent battery control module, among the configurations of a battery temperature sensing NV quantum sensor module according to the present invention.

[0013] FIG. 5 is an exploded perspective view illustrating a component formed in a rectangular shape with a layered structure that is in contact with the outer surface of one side of a lithium-ion battery, among the components of a battery temperature sensing NV quantum sensor module according to the present invention.

[0014] FIG. 6 is a cross-sectional view illustrating a component formed in a rectangular shape with a layered structure that is in contact with the outer surface of one side of a lithium-ion battery, among the components of a battery temperature sensing NV quantum sensor module according to the present invention.

[0015] FIG. 7 is a configuration diagram illustrating the components of a battery temperature sensing NV quantum sensor module connected to an intelligent battery control module according to the present invention and operated under the control of the intelligent battery control module.

[0016] FIG. 8 is a block diagram illustrating the components of a first lock-in camera unit according to the present invention,

[0017] FIG. 9 is a perspective view illustrating the components of a first lock-in camera unit according to the present invention.

[0018] FIG. 10 is a block diagram illustrating the components of a first lock-in measuring element unit according to the present invention,

[0019] FIG. 11 is a graph illustrating that a first lock-in image control unit according to the present invention controls the formation of image space information regarding the battery internal space temperature by measuring a signal proportional to the slope α of a curve obtained by lock-in measurement of a photon or fluorescence signal regarding the battery internal space temperature.

[0020] FIG. 12 is a block diagram illustrating the components of a first optical filter unit according to the present invention,

[0021] FIG. 13 is a configuration diagram showing the components of a battery temperature sensing NV quantum sensor according to the present invention, enlarged in the planar direction.

[0022] FIG. 14 is an embodiment illustrating the insertion of a nitrogen atom ion beam into a crystal by firing it at a diamond lattice on the surface using an ion implantation tool dedicated to semiconductors according to the present invention.

[0023] FIG. 15 is an embodiment illustrating that, within the lattice structure of diamond according to the present invention, a diamond-based NV center (141a), which is an NV center composed of nitrogen atoms and vacancy defects, is formed, and N quantum dot qubits composed of neutron + spin + N14 (Nitrogen-14) + C13 (Carbon-13) are formed.

[0024] FIG. 16 is an exemplary illustration showing the process of forming a battery temperature sensing NV quantum sensor composed of a diamond-based NV center according to the present invention.

[0025] FIG. 17 is an embodiment illustrating a battery temperature sensing NV quantum sensor unit according to the present invention, wherein a unit such as 1024 qubits is integrated into a single array of 30 × 30 micrometers or less.

[0026] FIG. 18 is a block diagram illustrating the components of a firsta quantum dot qubit according to the present invention,

[0027] FIG. 19 is a block diagram illustrating the components of a first-b quantum dot qubit according to the present invention,

[0028] FIG. 20 is an embodiment illustrating that, in the case of a battery temperature sensing NV quantum sensor unit according to the present invention, detection through a diamond-based NV center is performed as optical detection.

[0029] FIG. 21 is an embodiment illustrating a continuous waveform detection technique that detects the temperature of the battery internal space as a photon or fluorescence signal through the spin shape of a diamond-based NV center before optical detection by the battery temperature sensing NV quantum sensor part according to the present invention.

[0030] FIG. 22 is a block diagram illustrating the components of a first green laser generation control unit according to the present invention,

[0031] FIG. 23 is a block diagram illustrating the components of a first quantum dot qubit control signal generation unit according to the present invention,

[0032] FIG. 24 is a block diagram illustrating the components of a first multi-channel pulse waveform generation control unit according to the present invention,

[0033] FIG. 25 is a block diagram illustrating the components of a first microwave signal generating unit according to the present invention,

[0034] FIG. 26 is a graph illustrating that the first dual-frequency driving signal generation control unit according to the present invention controls the simultaneous generation of two transitions, Ms=0↔Ms=-1 and Ms=0↔Ms=+1, through dual-frequency driving.

[0035] FIG. 27 is an embodiment illustrating the control of the spin of a quantum dot qubit by applying a resonant microwave pulse in a first microwave signal generation unit according to the present invention.

[0036] FIG. 28 illustrates an embodiment in which, by applying a resonant microwave pulse that resonates only at the spin-up transition through a first microwave signal generator according to the invention, a quantum dot qubit is stimulated only when it spins up, and at this time, a photon or fluorescence signal regarding the temperature of the battery internal space is detected.

[0037] FIG. 29 is a block diagram illustrating the components of a battery pressure sensing NV quantum sensor module according to the present invention,

[0038] FIG. 30 is a configuration diagram illustrating a component formed in a rectangular shape with a layered structure in contact with the outer surface of one side of a lithium-ion battery and a component formed by modularization inside the module space of an intelligent battery control module, among the configurations of a battery pressure sensing NV quantum sensor module according to the present invention.

[0039] FIG. 31 is an exploded perspective view illustrating a component formed in a rectangular shape with a layered structure that is in contact with the outer surface of one side of a lithium-ion battery, among the components of a battery pressure sensing NV quantum sensor module according to the present invention.

[0040] FIG. 32 is a cross-sectional view illustrating a component formed in a rectangular shape with a layered structure that is in contact with the outer surface of one side of a lithium-ion battery, among the components of a battery pressure sensing NV quantum sensor module according to the present invention.

[0041] FIG. 33 is a configuration diagram illustrating the components of a battery pressure sensing NV quantum sensor module connected to an intelligent battery control module according to the present invention and operated under the control of the intelligent battery control module.

[0042] FIG. 34 is a block diagram illustrating the components of a second lock-in camera unit according to the present invention,

[0043] FIG. 35 is a perspective view illustrating the components of a second lock-in camera unit according to the present invention.

[0044] FIG. 36 is a block diagram illustrating the components of a second lock-in measuring element unit according to the present invention,

[0045] FIG. 37 is a graph illustrating that a second lock-in image control unit according to the present invention controls a signal proportional to the slope α of a curve obtained by lock-in measurement of a photon or fluorescence signal regarding the battery internal space pressure to form image space information regarding the battery internal space pressure.

[0046] FIG. 38 is a block diagram illustrating the components of a second optical filter unit according to the present invention,

[0047] FIG. 39 is a configuration diagram showing the components of a battery pressure sensing NV quantum sensor according to the present invention, enlarged in the planar direction.

[0048] FIG. 40 is an embodiment illustrating the insertion of a nitrogen atom ion beam into a crystal by firing it at a diamond lattice on the surface using an ion implantation tool dedicated to semiconductors according to the present invention.

[0049] FIG. 41 is an embodiment illustrating that, within the lattice structure of diamond according to the present invention, a diamond-based NV center (141a), which is an NV center composed of nitrogen atoms and vacancy defects, is formed, and N quantum dot qubits composed of neutron + spin + N14 (Nitrogen-14) + C13 (Carbon-13) are formed.

[0050] FIG. 42 is an exemplary illustration showing the process of forming a battery pressure sensing NV quantum sensor composed of a diamond-based NV center according to the present invention.

[0051] FIG. 43 is an embodiment illustrating a battery pressure sensing NV quantum sensor unit according to the present invention configured such that 1024 qubits are integrated into a single array of 30 × 30 micrometers or less.

[0052] FIG. 44 is a block diagram illustrating the components of a seconda quantum dot qubit according to the present invention,

[0053] FIG. 45 is a block diagram illustrating the components of a secondb quantum dot qubit according to the present invention,

[0054] FIG. 46 is an embodiment illustrating that, in the case of a battery pressure sensing NV quantum sensor unit according to the present invention, detection through a diamond-based NV center is performed as optical detection.

[0055] FIG. 47 is an embodiment illustrating a continuous waveform sensing technique that detects the battery internal space pressure as a photon or fluorescence signal through the spin shape of a diamond-based NV center prior to optical sensing by the battery pressure sensing NV quantum sensor part according to the present invention.

[0056] FIG. 48 is a block diagram illustrating the components of a second green laser generation control unit according to the present invention,

[0057] FIG. 49 is a block diagram illustrating the components of a second quantum dot qubit control signal generation unit according to the present invention,

[0058] FIG. 50 is a block diagram illustrating the components of a second multi-channel pulse waveform generation control unit according to the present invention,

[0059] FIG. 51 is a block diagram illustrating the components of a second microwave signal generating unit according to the present invention,

[0060] FIG. 52 is a graph illustrating that the second dual-frequency driving signal generation control unit according to the present invention controls the simultaneous generation of two transitions, Ms=0↔Ms=-1 and Ms=0↔Ms=+1, through dual-frequency driving.

[0061] FIG. 53 is an embodiment illustrating the control of the spin of a quantum dot qubit by applying a resonant microwave pulse in a second microwave signal generation unit according to the present invention.

[0062] FIG. 54 illustrates an embodiment in which, through a second microwave signal generator according to the present invention, a resonant microwave pulse that resonates only at the spin-up transition is applied to stimulate a quantum dot qubit only when it spins up, and at this time, a photon or fluorescence signal regarding the internal space pressure of the battery is detected.

[0063] FIG. 55 is a perspective view illustrating the components of a battery surface air cooling and heating module according to the present invention.

[0064] FIG. 56 is an exploded perspective view illustrating the components of an air-cooled thermoelectric element according to the present invention.

[0065] FIG. 57 is a block diagram illustrating the components of an intelligent battery control module according to the present invention,

[0066] FIG. 58 is a block diagram illustrating the components of an ODMR (Optical Detected Magnetic Resonance) spectrum peak position change detection control unit according to the present invention.

[0067] FIG. 59 is a block diagram illustrating the components of a battery thermal runaway prediction algorithm control unit according to the present invention.

[0068] FIG. 60 is a block diagram illustrating the components of a low-voltage protection circuit control unit according to the present invention.

[0069] FIG. 61 is a block diagram illustrating the components of a power switching control unit according to the present invention,

[0070] FIG. 62 is an exemplary diagram illustrating the operation process of a hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor according to the present invention.

[0071] FIG. 63 is a flowchart illustrating a method for controlling temperature and pressure sensing in the internal space of a lithium-ion battery using a hybrid NV quantum sensor type, comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor according to the present invention.

[0072] FIG. 64 is a flowchart illustrating a specific process for sensing spin changes of quantum dots generated during internal space temperature changes of a lithium-ion battery as photon or fluorescence signals related to the battery internal space temperature through NV centers composed of nitrogen atoms and vacancy defects within the lattice structure of diamond, in a battery temperature sensing NV quantum sensor module in contact with one outer surface of a lithium-ion battery according to the present invention.

[0073] FIG. 65 is a flowchart illustrating a specific process of forming image spatial information regarding the temperature of the internal space of a battery by locking in and measuring a photon or fluorescence signal regarding the temperature of the internal space of a battery sensed through a battery temperature sensing NV quantum sensor module according to the present invention.

[0074] FIG. 66 is a flowchart illustrating a specific process for sensing a spin change of a quantum dot generated during a change in internal space pressure of a lithium-ion battery as a photon or fluorescence signal related to strain (strain rate, ε) generated by the internal space pressure of the battery, through an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of a diamond, in a battery pressure sensing NV quantum sensor module in contact with the other outer surface of a lithium-ion battery according to the present invention.

[0075] FIG. 67 is a flowchart illustrating a specific process for forming image space information regarding strain (strain, ε) generated by the internal space pressure of a battery by locking in and measuring a photon or fluorescence signal regarding strain (strain, ε) generated by the internal space pressure of a battery sensed through a battery pressure sensing NV quantum sensor unit according to the present invention.

[0076] FIG. 68 is a flowchart illustrating a specific process for controlling the battery to predict the possibility of thermal runaway by learning the battery's operating pattern through an intelligent battery control module according to the present invention, by comparing and analyzing current battery internal space temperature and pressure data with past battery internal space temperature data and past battery internal space pressure data.

[0077] A battery temperature sensing NV quantum sensor module that detects changes in the internal temperature of a battery as an optical signal using quantum state changes and forms image spatial information regarding the temperature of the internal space of the battery based thereon;

[0078] A battery pressure sensing NV quantum sensor module that detects changes in internal battery pressure as optical signals using changes in quantum states and forms image spatial information regarding strain caused by internal battery pressure based thereon;

[0079] A battery surface air cooling / heating module that performs thermal management by supplying air to the battery surface according to a control signal of an intelligent battery control module to cool or heat;

[0080] A hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, characterized by being composed of an intelligent battery control module that monitors physical quantities including the temperature and pressure of the battery in real time based on battery internal space data transmitted from a battery temperature sensing NV quantum sensor module and a battery pressure sensing NV quantum sensor module, and performs battery protection, power control, and thermal management functions accordingly.

[0081] Prior to the description of the present invention, the following specific structural or functional descriptions are merely illustrative for the purpose of explaining embodiments according to the concept of the present invention. Embodiments according to the concept of the present invention may be implemented in various forms and should not be interpreted as being limited to the embodiments described herein. Furthermore, since embodiments according to the concept of the present invention may be subject to various modifications and may take various forms, specific embodiments are to be described in detail in this specification. However, this is not intended to limit embodiments according to the concept of the present invention to specific disclosed forms, and should be understood to include all modifications, equivalents, and substitutions that fall within the spirit and scope of the present invention.

[0082]

[0083] First, in the present invention, since the pressure and temperature of the internal space of the lithium-ion battery cannot be directly measured during thermal runaway of the lithium-ion battery, a battery temperature sensing NV quantum sensor module and a battery pressure sensing NV quantum sensor module are formed on the surface of the lithium-ion battery, respectively, and image spatial information regarding the temperature of the internal space of the battery is received from the battery temperature sensing NV quantum sensor module and a change in peak position in the ODMR (Optical Detected Magnetic Resonance) spectrum is detected to monitor the current temperature of the internal space of the lithium-ion battery in real time from -50°C to 150°C, and image spatial information regarding the pressure of the internal space of the battery is received from the battery pressure sensing NV quantum sensor module and a change in peak position in the ODMR (Optical Detected Magnetic Resonance) spectrum is detected to monitor the current pressure of the internal space of the lithium-ion battery in real time from 25KPa to 40MPa.

[0084] In addition, it has the characteristics of controlling the electric vehicle battery short circuit, controlling the low voltage protection circuit, controlling the power switching, and controlling the battery surface air cooling module drive, in order to detect thermal runaway of the lithium-ion battery early and prevent it, based on the current temperature of -50°C to 150°C and the current pressure of 25KPa to 40MPa of the internal space of the lithium-ion battery monitored in real time.

[0085]

[0086] Next, the battery temperature sensing NV quantum sensor module and the battery pressure sensing NV quantum sensor module are each installed on the surface of the lithium-ion battery according to the present invention in a 1:1 ratio on the surface of the lithium-ion battery, which is a cell unit of the lithium-ion battery pack of an electric vehicle. The reason for this is that since it is impossible to know which lithium-ion battery is experiencing thermal runaway, the thermal runaway is detected early and immediate action is taken to prevent the electric vehicle from burning up and, furthermore, other vehicles parked in the parking lot from burning up due to the thermal runaway.

[0087]

[0088] Next, the quantum dot qubit described in the present invention is quantum entanglement, which refers to some electrons being trapped in the empty space of a diamond-based NV center to form electron spins.

[0089]

[0090] Next, the hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device, consisting of a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, can be applied not only to electric vehicles but also to energy storage devices, aviation, and medical devices using lithium-ion batteries.

[0091]

[0092] Hereinafter, preferred embodiments according to the present invention will be described with reference to the accompanying drawings.

[0093] FIG. 1 is a block diagram illustrating the components of a hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor according to the present invention, and FIG. 2 is a configuration diagram illustrating the components of a hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor according to the present invention, wherein the device is configured to sense and control the current internal space temperature and pressure of the lithium-ion battery by contacting the outer surface of the lithium-ion battery and through the spin change of a quantum dot centered on an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of a diamond.

[0094]

[0095] More specifically, the above-mentioned hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device (1) is composed of a battery temperature sensing NV quantum sensor module (100), a battery pressure sensing NV quantum sensor module (200), a battery surface air cooling and heating module (300), and an intelligent battery control module (400).

[0096]

[0097] First, the battery temperature sensing NV quantum sensor module (100) according to the present invention will be described.

[0098] The above battery temperature sensing NV quantum sensor module (100) is in contact with the outer surface of one side of a lithium-ion battery and, through an NV center composed of nitrogen atoms and vacancy defects within a diamond lattice structure, senses the spin change of a quantum dot generated when the internal space temperature of the lithium-ion battery changes as a photon or fluorescent signal regarding the internal space temperature of the battery, and then locks in and measures the sensed photon or fluorescent signal regarding the internal space temperature of the battery to form image spatial information regarding the internal space temperature of the battery. At this time, the photon is identical to the fluorescent signal.

[0099] As illustrated in FIGS. 3 and 4, this is composed of a first lock-in camera unit (110), a first optical filter unit (120), a first elliptic reflector unit (130), a battery temperature sensing NV quantum sensor unit (140), a first quartz base plate unit (150), a first half ball lens (160), a first green laser generation control unit (170), a first quantum dot qubit control signal generation unit (180), a first multi-channel pulse waveform generation control unit (190), and a first microwave signal generation unit (190a).

[0100] In particular, the first lock-in camera unit (110), the first optical filter unit (120), the first elliptic reflector unit (130), the battery temperature sensing NV quantum sensor unit (140), the first quartz base plate unit (150), and the first half ball lens (160) are formed in a rectangular shape with a layered structure as shown in FIGS. 5 and 6, and are located on one side of the surface of the lithium-ion battery.

[0101] In addition, the first green laser generation control unit (170), the first quantum dot qubit control signal generation unit (180), the first multi-channel pulse waveform generation control unit (190), and the first microwave signal generation unit (190a) are made of MEMS (micro-electromechanical systems) as shown in FIG. 3, and each is formed into a modular structure and is located inside the module space of the intelligent battery control module.

[0102] And, the first green laser generation control unit (170), the first quantum dot qubit control signal generation unit (180), the first multi-channel pulse waveform generation control unit (190), and the first microwave signal generation unit (190a) are configured to be connected to the battery temperature sensing NV quantum sensor unit (140) through an electrical line.

[0103]

[0104] First, the first lock-in camera unit (110) according to the present invention will be described.

[0105]

[0106] The first Lock In camera unit (110) is positioned at the top of the first optical filter unit and is formed in a square shape. It serves to form image spatial information regarding the temperature of the battery internal space based on the image obtained by Lock In measuring the photon or fluorescence signal transmitted from the first optical filter unit at each pixel.

[0107] This has a higher signal-to-noise ratio compared to conventional cameras as a Lock In measurement, and has the characteristic of having less than half the number of pixels (292 × 282) compared to conventional cameras.

[0108] And, the measurement area is 150 x 150 µm 2 (1 pixel: 0.7 µm, adjustable depending on the situation), and dual transition is applied to minimize noise caused by contrast and temperature, and magnetic field <100> Through directional alignment, it has characteristics of a 2.7 improvement over the existing signal, thick NV, and low P1 concentration (existing 10 µm / 1 MHz → 40 µm / 0.47 MHz).

[0109] As shown in FIGS. 8 and 9, the first Lock In camera unit (110) is composed of a first Lock In measuring element unit (111), a first microlens type light receiving unit (112), a first camera sensor (113), and a first Lock In image control unit (114).

[0110]

[0111] [First Lock In measuring element part (111)]

[0112]

[0113] The first Lock In measuring element (111) above separates a specific signal from noise and then extracts only the pure signal through synchronization with a periodic input signal.

[0114] This consists of a first signal generator (111a), a first phase detector (111b), and a first low-pass filter (111c), as illustrated in FIG. 10.

[0115]

[0116] The first signal generator (111a) above serves to generate a periodic reference signal.

[0117]

[0118] This provides a reference synchronized with the frequency of the signal to be detected.

[0119]

[0120] The first phase detector (111b) above compares the input signal with the reference signal and extracts the synchronized signal.

[0121] This is configured to amplify only the desired signal based on the phase difference between the signal and the noise.

[0122]

[0123] The first low-pass filter (111c) above acts as a filter that removes high-frequency noise from the detected signal, leaving only a pure low-frequency signal.

[0124]

[0125] [First microlens-type light receiving part (112)]

[0126]

[0127] The first microlens-type light receiving unit (112) is formed as a microlens and serves to detect and receive a large amount of light by concentrating the light reaching each pixel.

[0128] This consists of an array of multiple fine lenses located on the camera sensor, and is designed with optimized lens curvature and size to better collect light entering the pixels.

[0129]

[0130] [First camera sensor (113)]

[0131]

[0132] The first camera sensor (113) performs the role of converting light entering through a microlens-type light receiver into an electrical signal to digitize the image of the Lock In measurement.

[0133] This is configured to detect light entering through a lens, collect the light intensity and color information, convert them into digital signals, and generate image data.

[0134] And, it consists of a CMOS (Complementary Metal-Oxide Semiconductor) sensor or a CCD (Charge-Coupled Device) sensor.

[0135] Here, CMOS sensors have the advantage of consuming less power and processing quickly, with each pixel independently detecting light and generating an electrical signal, while CCD sensors have the characteristic of providing high-quality images by generating an electrical signal in a single line after all pixels detect light.

[0136] And, the number of pixels ranges from tens of thousands to millions.

[0137]

[0138] [First lock-in image control unit (114)]

[0139]

[0140] The first lock-in image control unit (114) measures the spatial temperature distribution based on the image of the lock-in measurement digitized through the first camera sensor, and controls the formation of image spatial information regarding the temperature of the battery internal space.

[0141] In other words, by using the image of the Lock In measurement, a curve in the form of the derivative of ODMR (Optical Detected Magnetic Resonance) is obtained.

[0142] At this time, as shown in Fig. 11, a signal proportional to the slope α of the curve obtained by Lock In measurement is measured for the photon or fluorescence signal regarding the temperature of the battery's internal space, thereby obtaining information about the change in magnetic field ΔB(t).

[0143]

[0144] Contrast (C) and linewidth (Δf) of the ODMR curve, and current (I) generated from fluorescence reaching the photodiode PH If ) is given, calculate the shot-noise limited sensitivity.

[0145] As illustrated in FIG. 11, the source of the shot noise is the current I generated in the first camera sensor. PH It represents, and the noise spectral density (NSD) due to current is It is set to.

[0146] Load resistance R L In this case, the noise caused by short noise at the final output stage is It becomes.

[0147] In this process, The Johnson noise effect generated by the load resistance itself must be ignored by satisfying this condition.

[0148] The zero-crossing slope α of the locking curve is It is set approximately as.

[0149]

[0150] Based on this principle, the short noise limiting sensitivity η as shown in the following Equation 1 B It can be expressed as follows.

[0151]

[0152]

[0153]

[0154] Here, the magnetic field sensitivity of the battery temperature sensing NV quantum sensor part is proportional to the linewidth and linearly inversely proportional to the contrast, and the photocurrent I PH It is inversely proportional in the form of a square root.

[0155]

[0156] Through this, the first lock-in image control unit according to the present invention measures the spatial temperature distribution using a lock-in camera measurement method and forms image spatial information regarding the temperature of the battery internal space.

[0157]

[0158] Second, the first optical filter unit (120) according to the present invention will be described.

[0159] The first optical filter unit (120) is located at the bottom of the first Lock In camera unit and is formed in a square shape, and serves to collect photons or fluorescent signals transmitted from the first elliptical reflector, optically filter them, and then transmit them to the first Lock In camera unit.

[0160] This consists of a first bandpass filter (121), a first blocking filter (122), a first polarizing filter (123), and a first photon concentrator (124), as illustrated in FIGS. 12 and 13.

[0161]

[0162] The first bandpass filter (121) above serves to allow only light of a specific wavelength range (band) to pass through and to block the remaining wavelengths.

[0163]

[0164] The first blocking filter (122) is located on the upper layer of the bandpass filter and works together with the first bandpass filter to completely block light of a specific wavelength range.

[0165]

[0166] The first polarizing filter (123) is located on the upper layer of the first blocking filter and serves to remove reflected light or unnecessary polarization components by adjusting the polarization state of the light.

[0167]

[0168] The first photon concentrator (124) is located on the upper layer of the first polarizing filter and collects photons or fluorescent signals filtered through the first bandpass filter, the first blocking filter, and the first polarizing filter, and then transmits them to the first lock-in camera unit.

[0169]

[0170] Thus, by configuring the first optical filter unit (120) consisting of a first bandpass filter (121), a first blocking filter (122), a first polarizing filter (123), and a first photon concentrator (124), the signal-to-noise ratio (SNR) can be improved by 80% compared to the existing one, the accuracy of the data collected by the first Lock In camera unit can be increased by 1.5 to 3 times compared to the existing one, and the efficiency of the first Lock In camera unit can be improved by selectively strengthening the desired wavelength band through the filter and blocking unnecessary light.

[0171]

[0172] Third, the first reflector (Elliptic reflector) part (130) according to the present invention will be described.

[0173] The first reflector (Elliptic reflector) part (130) is positioned to surround the battery temperature sensing NV quantum sensor part and the first half ball lens, and the surface facing the battery temperature sensing NV quantum sensor part and the first half ball lens is formed in an elliptical shape, so that it serves to reflect the photon or fluorescent signal generated from the battery temperature sensing NV quantum sensor part and the photon or fluorescent signal reflected from the half ball lens back toward the first optical filter part.

[0174] As shown in FIG. 6, this consists of a first support structure body (131), a first elliptical reflective surface (132), and a first reflective coating part (133).

[0175]

[0176] The first support structure body (131) serves to support the battery temperature sensing NV quantum sensor part and the first half ball lens so as to surround them.

[0177] This is configured such that a first elliptical reflective surface is formed in a position facing the battery temperature sensing NV quantum sensor part and the first half ball lens, and a first reflective coating part is formed on the surface of the first elliptical reflective surface.

[0178]

[0179] The first elliptical reflective surface (132) is designed to be elliptical and serves to concentrate and reflect photons or fluorescent signals generated or reflected from the battery temperature sensing NV quantum sensor unit and the first half ball lens toward the first optical filter unit.

[0180]

[0181] The first reflective coating portion (133) is formed as a coating on the surface of the first elliptical reflective surface and serves to increase the reflectivity of photons or fluorescent signals.

[0182] This is formed by coating with aluminum or gold material.

[0183]

[0184] Fourth, the battery temperature sensing NV quantum sensor unit (140) according to the present invention will be described.

[0185] The above battery temperature sensing NV quantum sensor unit (140) is located at the bottom of the first reflector (Elliptic reflector) unit and is in contact with one side of the lithium-ion battery. It plays the role of sensing and detecting the spin change of quantum dots that occurs when the temperature of the lithium-ion battery changes through the NV center composed of nitrogen atoms and vacancy defects within the lattice structure of the diamond, as a photon or fluorescent signal regarding the temperature of the internal space of the battery.

[0186] This is based on a diamond-based NV center and is composed of useful sensors for DC and AC magnetic fields to enable sensitive and wide-field magnetic imaging under ambient conditions.

[0187] And, using a diamond-based NV center, it is configured to detect frequencies within 10 GHz from DC with a bandwidth of up to 100 kHz.

[0188] Sensitivity sets the weakest magnetic field sensitivity that can be detected with a single signal-to-noise ratio (SNR) in a given bandwidth.

[0189] It is composed of N different diamond-based NV centers in the sensing volume, and has the characteristic of improving sensitivity to √N and reaching a sensitivity level of pT / √Hz.

[0190] In addition, the diamond-based NV center is configured to be used for wide-area magnetic imaging at room temperature.

[0191] Since diamond-based NV centers have four possible orientations within the diamond crystal, they are configured to be used for vector magnetic measurements as well.

[0192] In addition, the ambient operating conditions and high sensitivity of the diamond-based NV center provide a wide frequency range and a strong signal.

[0193]

[0194] As shown in FIG. 13, the battery temperature sensing NV quantum sensor unit (140) is composed of a first sensor unit body (141), a first qubit metal gate (142), a first microwave strip line gate (143), a firsta quantum dot qubit (144), and a firstb quantum dot qubit (145).

[0195]

[0196] [First sensor unit body (141)]

[0197]

[0198] The first sensor body (141) is formed in a slim rectangular shape of 1mm × 1mm × 1mm (width × height × depth), that is, 1mm in width, 1mm in height, and 1mm in depth, and serves to protect and support each device from external pressure.

[0199] As shown in FIG. 14, an ion implantation tool dedicated to semiconductors is used to fire an ion beam of nitrogen atoms at the surface diamond lattice and insert it into the crystal, and as shown in FIG. 15, a diamond-based NV center (141a), which is an NV center composed of nitrogen atoms and vacancy defects within the diamond lattice structure, is formed, and N quantum dot qubits composed of neutron + spin + N14 (Nitrogen-14) + C13 (Carbon-13) are formed.

[0200] Here, thousands or tens of thousands of quantum dot qubits are formed, but for the explanation and understanding according to the present invention, a first quantum dot qubit 1a and a first quantum dot qubit 1b are formed.

[0201] At this time, a first qubit metal gate is formed on one side of the upper surface of the diamond where the firsta quantum dot qubit and the firstb quantum dot qubit are formed, and a first microwave strip line gate is formed on one side of the central line surface of the diamond.

[0202]

[0203] In addition, the first sensor body according to the present invention is formed in various sizes depending on the purpose of use and shape, in addition to the size of 1mm × 1mm × 1mm (width × length × height).

[0204]

[0205] The above diamond-based NV center (141a) is formed more specifically through the following process.

[0206]

[0207] First, to remove carbon-based (graphite) impurities attached to the surface of quantum-grade diamonds, a mixed solution of sulfuric acid + sodium nitrate or sulfuric acid + hypochlorite + nitric acid (1:1:1) is sprayed at a high temperature (above 200 degrees).

[0208]

[0209] Next, the interface-treated diamond is formed into a seed diamond through HPHT (High Pressure High Temperature) and CVD (Chemical Vapor Deposition).

[0210] Here, HPHT refers to the synthesis of diamond under high temperature (1300°C) and high pressure (60,000 atmospheres), and CVD (Chemical Vapor Deposition) refers to the formation of a diamond layer by reacting a carbon-containing gas (mainly methane) with hydrogen, thereby depositing carbon atoms in a gaseous state onto a diamond substrate.

[0211]

[0212] Next, as shown in FIG. 16, a seed diamond is placed in a microwave oven and formed to grow a diamond layer slowly through oxygen plasma ashing.

[0213] That is, it is performed by including CYTOP spin coating and 180-degree hard baking.

[0214] At this time, a diamond-based NV center is formed as close as possible to the sample.

[0215] And, in the case where the diamond sensor is a flat plate, the layer is formed so as to be very close to the surface.

[0216]

[0217] Next, using a semiconductor-specific ion implantation tool, an ion beam of nitrogen atoms is fired at the diamond lattice on the surface and inserted into the crystal.

[0218] At this time, when implanting the ion beam of nitrogen atoms, it is formed at 1 MeV, 1 E19 / cm2.

[0219] In addition, it contains nitrogen at a level of 10 ppm (based on Diamond Type 1b).

[0220]

[0221] Next, since the arrangement of diamond-based NV centers is important, diamonds are inserted into the surface, and a mask and resistor are used.

[0222] At this time, spin-coating is performed on the pT crystal.

[0223]

[0224] Next, in order to ensure that the correct pattern is placed on the diamond layer, the diamond chip with a fine pattern made by the theograph after removing the resist undergoes a high-temperature annealing step performed in a vacuum.

[0225] That is, after undergoing a 1-hour CYTOP rotary drying and 50-degree soft baking process, thermal deposition of a silver (Ag) mirror is performed.

[0226] At this time, an atomic void is created next to the embedded nitrogen atom.

[0227]

[0228] Finally, a battery temperature sensing NV quantum sensor part (140) is completed in which some electrons are trapped in the empty space of the diamond-based NV center to form electron spins that can be used as quantum dot qubits.

[0229] At this time, the completed battery temperature sensing NV quantum sensor part (140) is composed of a structure in which a multi-layer dielectric and a metal reflector are combined, and the size is, for example, 3 x 3 x 0.5 mm3, and has characteristics of Ns0 and NV concentrations: 14 ppm and 2.5 ppm.

[0230] In addition, depending on the purpose and form of use, single-crystal diamond having a diamond-based NV center concentration of 5 ppm to 50 ppm is used and configured.

[0231]

[0232] The diamond-based NV center of the battery temperature sensing NV quantum sensor unit formed through this process forms several unique functions required for a quantum information system.

[0233]

[0234] First, electron spin has the characteristic of having a very long, consistent time of up to 0.8 to 1.5 seconds.

[0235] This means that it can be controlled with good qubits.

[0236] And, the qubit at this time can be operated over a wide temperature range up to room temperature (290K).

[0237]

[0238] Second, electron spin has the characteristic that it is not the only qubit in a quantum information system.

[0239] This combines with the environment's nuclear spin to provide additional qubits capable of storing and processing quantum information.

[0240]

[0241] In addition, electron spin interacts with photons, the fundamental particles of light.

[0242] This allows quantum states to be sent over long distances and connected to distant diamond-based NV centers, and entangled.

[0243]

[0244] In addition, the first sensor body according to the present invention controls a quantum dot qubit through a first qubit metal gate on one side of the diamond top surface using crossbar technology.

[0245] And, using a limited number of wires connected horizontally and vertically, a much larger number of components, such as quantum dots in a two-dimensional array, can be adjusted.

[0246]

[0247] Through this approach, the battery temperature sensing NV quantum sensor unit (140) is configured such that, as shown in FIG. 17, 1024 qubits are integrated into a single array of 30 × 30 micrometers or less.

[0248]

[0249] Through this configuration, a first quantum integrated circuit is configured in which different local arrays are interconnected with other local arrays of the same chip using quantum links, which are links capable of transmitting quantum information and entanglement.

[0250]

[0251] The above-mentioned first quantum integrated circuit is designed and fabricated to be capable of capturing more than 99% of photon or fluorescence signals through a structure combining a multi-layer dielectric and a metal reflector.

[0252] That is, a structure that is easy to fabricate by spin-coating a material with a low refractive index (cytop, n=1.35) is selected, a structure is designed to operate in a wide fluorescence emission wavelength band in NV, and the operational performance of the structure is confirmed through FDTD analysis and experiments.

[0253]

[0254] [First qubit metal gate (142)]

[0255]

[0256] The first qubit metal gate (142) above serves to transmit a pulse waveform, which controls the quantum dot (QD) energy level and cross-coupling, generated from the first multi-channel pulse waveform generation control unit, to the firsta quantum dot qubit and the firstb quantum dot qubit on one side of the top surface of the diamond.

[0257] As shown in FIG. 13, this is composed of a first qubit metal gate (142a) and a first qubit metal gate (142b), and is configured with a source and a drain formed on one side.

[0258]

[0259] The above-mentioned firsta qubit metal gate (142a) is connected to the firsta quantum dot qubit and serves to transmit a pulse waveform that controls the quantum dot (QD) energy level and cross-coupling, generated from the first multi-channel pulse waveform generation control unit, to the firsta quantum dot qubit.

[0260]

[0261] The above-mentioned first-b qubit metal gate (142b) is connected to the first-b quantum dot qubit and serves to transmit a pulse waveform that controls the quantum dot (QD) energy level and cross-coupling, generated from the first multi-channel pulse waveform generation control unit, to the first-b quantum dot qubit.

[0262]

[0263] As such, the first qubit metal gate (142), composed of the firsta qubit metal gate (142a) and the firstb qubit metal gate (142b), is configured with 10 channels, 100 channels, 1000 channels, and 10000 channels depending on the purpose and form of use, in addition to 2 channels.

[0264]

[0265] [First microwave strip line gate (143)]

[0266]

[0267] The first microwave strip line gate (143) is located on one side of the diamond center line surface and receives a resonant microwave pulse generated by the first microwave signal generator and transmits it to the firsta quantum dot qubit and the firstb quantum dot qubit.

[0268] As shown in FIG. 13, when viewed from the planar direction, it is formed and configured as a dumbbell structure with wide sides and a narrow central part.

[0269]

[0270] [1a quantum dot qubit (144)]

[0271]

[0272] The above-mentioned first quantum dot qubit (144) forms a diamond-based NV center composed of nitrogen atoms and vacancy defects within the lattice structure of diamond, and forms neutron + spin + N14 (Nitrogen-14) + C13 (Carbon-13) in the diamond-based NV center space, thereby serving to sense the spin change of the quantum dot that occurs when the temperature of the lithium-ion battery changes as a photon or fluorescent signal regarding the temperature of the battery's internal space.

[0273] As illustrated in FIG. 18, this consists of a first-a quantum dot (144a), a first-a electron spin portion (144b), and a first-a quantum portion (144c).

[0274]

[0275] The above-mentioned first quantum dot (144a) is a structure in which electrons have quantized energy in a specific energy state and plays a role in changing spin in a specific form when the temperature of the lithium-ion battery changes.

[0276] Here, specific form refers to the +1, 0, -1 form.

[0277]

[0278] The above-mentioned first electron spin unit (144b) is an electron spin state that is controlled to a state corresponding to 0 or 1, and plays a role in sensing the temperature of the battery internal space as a photon or fluorescent signal through the superposition and quantum entanglement of the two states.

[0279]

[0280] The above-mentioned firsta quantum part (144c) is generated as electrons escape, interacts with electrons within the firsta quantum dot, and plays a role in forming the quantum state of the firsta quantum dot.

[0281] Here, a quantum state refers to a state that has a positive charge.

[0282]

[0283] [1b quantum dot qubit (145)]

[0284]

[0285] The above-mentioned first-b quantum dot qubit (145) is located on one side of the first-a quantum dot qubit, and a diamond-based NV center is formed, which is an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of diamond, and neutron + spin + N14 (Nitrogen-14) + C13 (Carbon-13) is formed in the diamond-based NV center space, thereby serving to sense the spin change of the quantum dot that occurs when the temperature of the lithium-ion battery changes as a photon or fluorescent signal regarding the temperature of the battery's internal space.

[0286] As shown in FIG. 19, this consists of a first-b quantum dot (145a), a first-b electron spin portion (145b), and a first-b electron spin portion (145c).

[0287]

[0288] The above-mentioned first-b quantum dot (145a) is a structure in which an electron has quantized energy in a specific energy state and plays a role in changing spin in a specific form when the temperature of the lithium-ion battery changes.

[0289] Here, specific form refers to the +1, 0, -1 form.

[0290]

[0291] The above-mentioned first electron spin unit (145b) is an electron spin state that is controlled to a state corresponding to 0 or 1, and plays a role in sensing the temperature of the battery internal space as a photon or fluorescent signal through the superposition and quantum entanglement of the two states.

[0292]

[0293] The above-mentioned first quantum part (145c) is generated as electrons escape, interacts with electrons within the second quantum dot, and plays a role in forming the quantum state of the second quantum dot.

[0294] Here, a quantum state refers to a state that has a positive charge.

[0295]

[0296] As such, the battery temperature sensing NV quantum sensor unit (140), composed of a first sensor unit body (141), a first qubit metal gate (142), a first microwave strip line gate (143), a firsta quantum dot qubit (144), and a firstb quantum dot qubit (145), performs detection through a diamond-based NV center as optical detection, as shown in FIG. 20.

[0297] And, prior to optical detection, it is detected by a continuous waveform detection technique that detects photon or fluorescent signals regarding the temperature of the battery's internal space through the spin shape of a diamond-based NV center.

[0298]

[0299] That is, as illustrated in FIG. 21, the continuous waveform detection technique divides the |ms = ±1> levels and measures the state independently. Since the |ms = ±1> levels of different NV directions in the spin shape of the diamond-based NV center are divided into different amounts depending on the direction of the external magnetic field, these NV directions can be distinguished from each other.

[0300] The green laser generated from the first green laser generation control unit excites the spin shape of the diamond-based NV center without resonance, generating a photon or fluorescence signal regarding the temperature of the battery's internal space that can be detected by the photodiode unit, and the quantum dot qubit control signal generation module sends a resonant microwave (MW) frequency signal to the micro-antenna unit close to the spin shape of the diamond-based NV center to drive spin switching.

[0301]

[0302] Then, while transmitting a photon or fluorescence signal regarding the internal battery temperature toward the photodiode, the resonant microwave (MW) frequency is swept.

[0303] When the resonant microwave (MW) frequency transitions from the |ms = 0> state to one of the |ms = ±1> states and enters a resonant state, a decrease in the fluorescence signal is observed.

[0304] Changes in fluorescence when the resonant microwave (MW) frequency resonates allow the intelligent battery control module to record the spectrum.

[0305]

[0306] As described above, by configuring a battery temperature sensing NV quantum sensor unit comprising a first sensor unit body, a first qubit metal gate, a first microwave strip line gate, a firsta quantum dot qubit, and a firstb quantum dot qubit, it is possible to detect the internal space temperature of a battery from -50 degrees to +150 degrees through photon or fluorescence signal sensing regarding the internal space temperature of a lithium-ion battery, operate stably within a wide frequency range from DC to 10 GHz, maintain consistent performance even in a multi-channel environment, and improve sensor sensitivity and accuracy by 80% by minimizing signal distortion while maintaining sensitivity in various frequency bands through dynamic frequency and cross-coupling control.

[0307]

[0308] [First Quartz base plate part (150)]

[0309]

[0310] The first quartz base plate (150) is located at the bottom of the battery temperature sensing NV quantum sensor and supports the battery temperature sensing NV quantum sensor from the bottom direction, generates an electrical signal when pressure is received from the battery surface, and maintains a constant frequency of vibration when there is an external temperature change or mechanical change.

[0311] It is composed of the structure of silicon dioxide (SiO2) and has a hexagonal structure (Alpha) and a trigonal structure (Beta) at high temperatures.

[0312] It is formed into a fixed crystal structure after maintaining piezoelectric properties and natural frequency.

[0313] In addition, the battery temperature sensing NV quantum sensor part is configured to include an oscillator to maintain a stable frequency.

[0314] The thermal conductivity of the quartz base plate is 1.4 [W / m·k], which is more than 2000 times lower than that of diamond, and the diamond-quartz composite structure improves the inaccuracy in temperature measurement caused by the high thermal conductivity of diamond.

[0315]

[0316] In this way, the first quartz base plate is positioned at the bottom of the battery temperature sensing NV quantum sensor to support it, thereby improving structural strength and durability. It can operate stably even in extreme environments such as high temperature and high pressure, and can maintain a constant frequency even under high temperature or external stimuli, thus increasing the stability of the electronic device.

[0317]

[0318] [First half ball lens (160)]

[0319]

[0320] The first half ball lens (160) is formed to be covered with a convex lens structure along the upper surface of the first sensor unit body, and serves to collect photon or fluorescent signals regarding the battery internal space temperature sensed by the first quantum dot qubit and the first quantum dot qubit of the battery temperature sensing NV quantum sensor unit and transmit them toward the first reflector (Elliptic reflector) unit.

[0321]

[0322] [First green laser generation control unit (170)]

[0323]

[0324] The first green laser generation control unit (170) is located on one side of the battery temperature sensing NV quantum sensor unit and generates a 532nm green laser to stimulate the diamond-based NV center of the battery temperature sensing NV quantum sensor unit, thereby controlling the diamond-based NV center to transition to a high energy state so that a photon or fluorescent signal regarding the battery internal space temperature that can be detected by the first Lock In camera unit is generated, and controls the electronic spin state to be initialized.

[0325] Here, the transition of a diamond-based NV center to a high energy state refers to exciting the spin shape of the diamond-based NV center without resonance. Then, a 532 nm green laser is generated with a laser output of 0.1 to 1 W and focused with a lens to form a fluorescence on the surface of the NV quantum sensor with a diameter of approximately 10 to 100 μm. At this time, the NV quantum sensor that receives the 532 nm green laser emits red light (red light) in the 700 nm wavelength range as fluorescence.

[0326] As illustrated in FIG. 22, this consists of a first green laser beam nozzle part (171) that shoots a green laser beam toward the beam splitter part, a first green laser beam generating part (172) that generates a green laser beam, and a first beam splitter part (173) that shoots toward the green laser beam nozzle part.

[0327]

[0328]

[0329] In other words, if it returns directly to the ground state by the emission of photons or fluorescence signals, it generates red light.

[0330] When an electron in this state is exposed to a green laser beam, it is lifted to the degenerate state ms = ±1 (in quantum mechanics, the existence of two or more states for a single energy level) and recombined back into M.

[0331] Here, the state where ms=0 emits less red light, so the diamond appears darker.

[0332]

[0333] [First quantum dot qubit control signal generation unit (180)]

[0334]

[0335] The first quantum dot qubit control signal generation unit (180) generates a quantum dot qubit control signal in a frequency range from DC to 10 GHz with a spurious 1 GHz modulation bandwidth toward the battery temperature sensing NV quantum sensor unit, and plays the role of controlling the quantum dot qubit, which is a component of the battery temperature sensing NV quantum sensor unit.

[0336] More specifically, it is connected to a quantum dot qubit that forms a quantum dot in a diamond-based NV center of the battery temperature sensing NV quantum sensor unit.

[0337] Here, quantum dot qubits are electrons located in a quantum dot, represented as quantum bits, and have spin.

[0338] It has characteristics of low phase noise and low spurious tone for high fidelity gates, high output power for short gate pulses without external amplification, and 14-bit output at 6 GSa / s.

[0339] In addition, waiting time can be minimized, quantum dot qubits can be controlled from 2 channels to N channels (1000 to 10000), and high-fidelity quantum dot qubit gate operations can be performed.

[0340] As shown in FIG. 23, the first quantum dot qubit control signal generation unit (180) is composed of a first double superheterodyne algorithm engine unit (181), a first analog output channel unit (182), a first sequencer unit (183), a first low-latency signal processing chain unit (184), a first low-phase noise synthesizer (185), and a first high-output power unit (186).

[0341]

[0342] The first double superheterodyne algorithm engine (181) upconverts the frequency of the input signal to generate a quantum dot qubit control signal in a wide frequency band (within 10 GHz from DC).

[0343]

[0344] The first analog output channel section (182) above serves to form an analog output channel that simultaneously controls a plurality of quantum dot qubits.

[0345] This is configured on one side of a box-shaped body by selecting one of 2 channels, 4 channels, 6 channels, 8 channels, or 12 channels.

[0346]

[0347] The first sequencer (183) determines the order of control signals and controls the signal timing between quantum dot qubits.

[0348]

[0349] The above first low-latency signal processing chain (184) plays a role in controlling the processing and transmission of control signals quickly to minimize signal transmission delay.

[0350] This allows for rapid response to real-time changes in quantum dot qubit states, making it effective in situations requiring a fast reaction.

[0351]

[0352] The first low-phase noise synthesizer (185) above minimizes the phase noise of the control signal and generates a high-fidelity signal.

[0353]

[0354] The first high-output power unit (186) above serves to form a short gate pulse by providing a strong control signal without an external amplifier.

[0355] This enables fast and powerful control of quantum dot qubits, allowing for high-speed quantum gate operations.

[0356]

[0357]

[0358] Thus, by configuring the first quantum dot qubit control signal generation unit (180) consisting of the first double superheterodyne algorithm engine unit (181), the first analog output channel unit (182), the first sequencer unit (183), the first low-latency signal processing chain unit (184), the first low-phase noise synthesizer (185), and the first high-output power unit (186), a wide frequency range from DC to 10 GHz is supported, a spurious 1 GHz modulation bandwidth is provided, and high-speed control is possible through high output and short gate pulses, thereby making the system response time 1.5 to 2 times faster than the existing one.

[0359]

[0360] [First multi-channel pulse waveform generation control unit (190)]

[0361]

[0362] The first multi-channel pulse waveform generation control unit (190) is connected to the battery temperature sensing NV quantum sensor unit and plays the role of generating a pulse waveform that controls the quantum dot qubit energy level and cross-coupling toward the battery temperature sensing NV quantum sensor unit and outputting it.

[0363] Here, cross-coupling refers to controlling the coupling between non-adjacent resonators through a coupling window, such as coupling between other resonators rather than sequential coupling between resonators through a coupling window, thereby suppressing unwanted interactions and inducing accurate coupling only when necessary.

[0364] This is formed in a box shape and connected to a battery temperature sensing NV quantum sensor unit, and is configured to include a signal bandwidth of 2.4 GSa / s, 16 bits, and 750 MHz, a first direct mode (191) that maximizes the bandwidth and improves noise performance as shown in FIG. 24, and a first amplification mode (192) that raises the signal amplitude to 5 Vpp.

[0365] In addition, it features 144 output channels, high channel density formation, trigger-output delay of less than 50 ns, and multi-frequency digital modulation.

[0366] In addition, to counteract the effects of cross-coupling, additional pulses are configured to be applied to multiple gates (single-structure qubit metal gates, complex-structure qubit metal gates, microwave strip line gates).

[0367] In addition, to generate a single-structure qubit metal gate, the microwave source is modulated and configured to control quantum dot (QD) qubits and neighboring qubits through frequency multiplexing.

[0368]

[0369] Thus, by configuring the first multi-channel pulse waveform generation control unit, the scalability of a complex quantum system can be maximized to process more quantum dot qubits simultaneously, and a response speed faster than existing technology can be provided with a trigger-output delay of less than 50 ns. Furthermore, by precisely controlling the interaction between quantum dot qubits, highly complex quantum computation tasks and photon sensing tasks regarding the temperature of the battery internal space can be performed with high precision, improved by 80% compared to existing methods.

[0370]

[0371] [First microwave signal generating unit (190a)]

[0372]

[0373] The first microwave signal generation unit (190a) sends a microwave signal toward the battery temperature sensing NV quantum sensor unit to control the spin switching of the quantum dot qubit of the diamond-based NV center.

[0374] Here, sending a microwave signal toward the battery temperature sensing NV quantum sensor means sending a microwave signal toward the microwave antenna in contact with the battery temperature sensing NV quantum sensor.

[0375] As shown in FIG. 25, this consists of a first microwave signal generation unit (190a-1), a first microwave amplifier unit (190a-2), and a first microwave antenna unit (190a-3).

[0376]

[0377] The first microwave signal generation unit (190a-1) generates a resonant microwave pulse and transmits it to the first microwave amplifier. This is configured to include a first dual-frequency driving signal generation control unit (190a-1a).

[0378] As shown in FIG. 26, the first dual frequency driving signal generation control unit (190a-1a) plays the role of controlling to simultaneously generate two transitions, Ms=0↔Ms=-1 and Ms=0↔Ms=+1, through dual frequency driving.

[0379] That is, when the phase of the Reference signal used in FM is reversed, the Lock-in signal of the first Lock-In camera unit is set to SLIA = 2αΔB(t).

[0380] In addition, by doubling the signal magnitude or contrast, it can obtain double the sensitivity and eliminate the influence of external temperature changes to a very high degree in extreme environments, thereby having the characteristic of suppressing distortion of the magnetic field signal.

[0381] The first dual frequency driving signal generation control unit is configured to include a first MW generator (MW1) and a second MW generator (MW2).

[0382] That is, two reference signals (Ref1, Ref2) generated by a phase-synchronized 2-channel signal generator are applied to the first MW generator (MW1) and the second MW generator (MW2) as reference signals required for FM.

[0383]

[0384] And, when the frequencies of Ref1 and Ref2 are made equal and the phase difference is made by π, if only the change in magnetic field is observed, it is as shown in FIG. 26.

[0385] In other words, in the case of a single frequency, not only is the magnitude of the 10 Hz signal reduced by half, but baseline drift caused by temperature changes also occurs.

[0386] In addition, since such a phenomenon is not observed at dual frequency, the spin change of quantum dots caused by temperature changes in lithium-ion batteries can be stably measured as a change in magnetic field without being affected by external temperature changes in extreme environments.

[0387]

[0388] The first microwave amplifier (190a-2) above serves to amplify the resonant microwave pulse generated by the first microwave signal generator.

[0389]

[0390] As shown in FIG. 7, the first microwave antenna section (190a-3) sends a resonant microwave pulse toward the quantum dot qubit of the diamond-based NV center to control spin switching.

[0391]

[0392] Thus, the first microwave signal generation unit (190a), composed of the first microwave signal generation unit (190a-1), the first microwave amplifier unit (190a-2), and the first microwave antenna unit (190a-3), shoots a microwave pulse at the quantum dot qubit to make the electron spin up.

[0393] In this case, the pulse must have a very specific frequency, and that frequency depends on the bias magnetic field accompanying the electron.

[0394]

[0395] For example, the resonant microwave pulse is 45 GHz.

[0396] And, the resonant microwave pulse forms a bias magnetic field.

[0397] The bias magnetic field that spin-shifts quantum dot qubits has an electron resonance frequency.

[0398]

[0399] Therefore, when a resonant microwave pulse suitable for them arrives, all electrons are excited and change into a rotational state.

[0400] However, it has the characteristic of being able to stop at any time.

[0401]

[0402] As illustrated in FIG. 27, the spin of the quantum dot qubit is configured to be controlled by applying a resonant microwave pulse.

[0403] In other words, starting with an upward-pointing spin and applying a variable-length resonant microwave pulse, it can be observed that the spin rotates from top to bottom and then returns in a consistent manner.

[0404] Quantum superposition of spin-up and spin-down is generated in the middle of the rotation.

[0405]

[0406] In this case, the spin state is measured through an optical transition.

[0407]

[0408] Diamond-based NV centers have various optical transitions associated with various spin states, such as quantum dot qubits and neighboring quantum dot qubits.

[0409]

[0410] Therefore, as illustrated in FIG. 28, by applying a resonant microwave pulse that resonates only with the spin-up transition, the quantum dot qubit is stimulated only when it spins up, and at this time, a photon or fluorescence signal regarding the temperature of the battery's internal space is detected.

[0411]

[0412] Also, if the spin is lowered, the darkness is maintained.

[0413]

[0414] With this configuration and method, through the quantum dot qubit control signal generation module according to the present invention, it is possible to read what state the spin state of the quantum dot qubit is in and what it is.

[0415]

[0416] In this way, the first microwave signal generation unit (190a) is configured with the first microwave signal generation unit (190a-1), the first microwave amplification unit (190a-2), and the first microwave antenna unit (190a-3), thereby accurately controlling the spin state of the quantum dot qubit and forming a sensing atmosphere capable of detecting photon or fluorescent signals regarding the temperature of the battery internal space according to the spin state, and detecting high-resolution signals.

[0417]

[0418] Next, a battery pressure sensing NV quantum sensor module (200) according to the present invention will be described.

[0419] The above battery pressure sensing NV quantum sensor module (200) is in contact with the outer surface of the other side of the lithium-ion battery and, through the NV center composed of nitrogen atoms and vacancy defects within the lattice structure of diamond, senses the spin change of the quantum dot that occurs when the internal space pressure of the lithium-ion battery changes as a photon or fluorescent signal regarding the strain (strain rate, ε) caused by the internal space pressure of the battery, and then locks in and measures the sensed photon or fluorescent signal regarding the strain (strain rate, ε) caused by the internal space pressure of the battery to form image space information regarding the strain (strain rate, ε) caused by the internal space pressure of the battery.

[0420] As illustrated in FIGS. 29 and 30, this is composed of a second lock-in camera unit (210), a second optical filter unit (220), a second elliptic reflector unit (230), a battery pressure sensing NV quantum sensor unit (240), a second quartz base plate unit (250), a second half ball lens (260), a second green laser generation control unit (270), a second quantum dot qubit control signal generation unit (280), a second multi-channel pulse waveform generation control unit (290), and a second microwave signal generation unit (290a).

[0421] In particular, the second lock-in camera unit (210), the second optical filter unit (220), the second elliptic reflector unit (230), the battery pressure sensing NV quantum sensor unit (240), the second quartz base plate unit (250), and the second half ball lens (260) are formed in a rectangular shape with a layered structure as shown in FIGS. 31 and 32, and are located on the other side of the outer surface of the lithium-ion battery.

[0422] In addition, the second green laser generation control unit (270), the second quantum dot qubit control signal generation unit (280), the second multi-channel pulse waveform generation control unit (290), and the second microwave signal generation unit (290a) are composed of MEMS (micro-electromechanical systems) and are each formed into a modular structure and located inside the module space of the intelligent battery control module.

[0423] And, the second green laser generation control unit (270), the second quantum dot qubit control signal generation unit (280), the second multi-channel pulse waveform generation control unit (290), and the second microwave signal generation unit (290a) are configured to be connected to the battery temperature sensing NV quantum sensor unit via an electrical line, as shown in FIG. 30.

[0424]

[0425] First, the second lock-in camera unit (210) according to the present invention will be described.

[0426] The second Lock In camera unit (210) is located at the top of the second optical filter unit and is formed in a square shape. It serves to form image spatial information regarding the internal space pressure of the battery based on the image obtained by Lock In measuring the photon or fluorescence signal transmitted from the second optical filter unit at each pixel.

[0427] This has a higher signal-to-noise ratio compared to conventional cameras as a Lock In measurement, and has the characteristic of having less than half the number of pixels (292 × 282) compared to conventional cameras.

[0428] And, the measurement area is 150 x 150 µm 2 (1 pixel: 0.7 µm, adjustable depending on the situation), and dual transition is applied to minimize noise caused by contrast and temperature, and magnetic field <100> Through directional alignment, it has characteristics of a 2.7 improvement over the existing signal, thick NV, and low P1 concentration (existing 10 µm / 1 MHz → 40 µm / 0.47 MHz).

[0429] As shown in FIGS. 34 and 35, the second Lock In camera unit (210) is composed of a second Lock In measuring element unit (211), a second microlens type light receiving unit (212), a second camera sensor (213), and a second Lock In image control unit (214).

[0430]

[0431] [Second Lock In measuring element part (211)]

[0432]

[0433] The above second Lock In measuring element unit (211) separates a specific signal from noise and then extracts only the pure signal through synchronization with a periodic input signal.

[0434] This consists of a second signal generator (211a), a second phase detector (211b), and a second low-pass filter (211c), as illustrated in FIG. 36.

[0435]

[0436] The second signal generator (211a) above serves to generate a periodic reference signal.

[0437] This provides a reference synchronized with the frequency of the signal to be detected.

[0438]

[0439] The second phase detector (211b) above compares the input signal with the reference signal and extracts the synchronized signal.

[0440] This is configured to amplify only the desired signal based on the phase difference between the signal and the noise.

[0441]

[0442] The second low-pass filter (211c) above acts as a filter that removes high-frequency noise from the detected signal, leaving only a pure low-frequency signal.

[0443]

[0444] [Second microlens type light receiving part (212)]

[0445]

[0446] The second microlens-type light receiving unit (212) is formed with a fine lens and serves to detect and receive a large amount of light by concentrating the light reaching each pixel.

[0447] This consists of an array of multiple fine lenses located above the second camera sensor, and is designed with optimized lens curvature and size to better collect light entering the pixels.

[0448]

[0449] [Second camera sensor (213)]

[0450]

[0451] The second camera sensor (213) performs the role of converting light entering through the second microlens-type light receiver into an electrical signal to digitize the image of the Lock In measurement.

[0452] This is configured to detect light entering through a lens, collect the light intensity and color information, convert them into digital signals, and generate image data.

[0453] And, it consists of a CMOS (Complementary Metal-Oxide Semiconductor) sensor or a CCD (Charge-Coupled Device) sensor.

[0454] Here, CMOS sensors have the advantage of consuming less power and processing quickly, with each pixel independently detecting light and generating an electrical signal, while CCD sensors have the characteristic of providing high-quality images by generating an electrical signal in a single line after all pixels detect light.

[0455] And, the number of pixels ranges from tens of thousands to millions.

[0456]

[0457] [Second Lock-in Image Control Unit (214)]

[0458]

[0459] The second lock-in image control unit (214) measures the spatial temperature distribution based on the image of the lock-in measurement digitized through the second camera sensor, and controls the formation of image spatial information regarding the temperature of the battery's internal space.

[0460] In other words, by using the image of the Lock In measurement, a curve in the form of the derivative of ODMR (Optical Detected Magnetic Resonance) is obtained.

[0461] At this time, as shown in FIG. 37, a photon or fluorescence signal regarding strain (strain rate, ε) generated by the internal space pressure of the battery is measured, and a signal proportional to the slope α of the curve obtained by Lock In measurement is measured, thereby obtaining information about the change in magnetic field ΔB(t).

[0462]

[0463] Contrast (C) and linewidth (Δf) of the ODMR curve, and current (I) generated from fluorescence reaching the photodiode PHIf ) is given, calculate the shot-noise limited sensitivity.

[0464] As illustrated in FIG. 37, the source of the shot noise is the current I generated in the first camera sensor. PH It represents, and the noise spectral density (NSD) due to current is It is set to.

[0465] Load resistance R L In this case, the noise caused by short noise at the final output stage is It becomes.

[0466] In this process, The Johnson noise effect generated by the load resistance itself must be ignored by satisfying this condition.

[0467] The zero-crossing slope α of the locking curve is It is set approximately as.

[0468]

[0469] Based on this principle, the short noise limiting sensitivity η as shown in the following Equation 2 B It can be expressed as follows.

[0470]

[0471]

[0472]

[0473] Here, the magnetic field sensitivity of the battery temperature sensing NV quantum sensor part is proportional to the linewidth and linearly inversely proportional to the contrast, and the photocurrent I PH It is inversely proportional in the form of a square root.

[0474] Accordingly, the second lock-in image control unit according to the present invention measures the spatial pressure distribution using a lock-in camera measurement method and provides image spatial information regarding the strain (deformation rate, ε) caused by the internal space pressure of the battery.

[0475]

[0476] Second, the second optical filter unit (220) according to the present invention will be described.

[0477] The second optical filter unit (220) is located at the bottom of the second Lock In camera module and is formed in a square shape, and serves to collect photons or fluorescent signals transmitted from the second elliptical reflector, optically filter them, and then transmit them toward the second Lock In camera module.

[0478] As shown in FIG. 38, this consists of a second bandpass filter (221), a second blocking filter (222), a second polarizing filter (223), and a second photon concentrator (224).

[0479]

[0480] The second bandpass filter (221) above serves to allow only light of a specific wavelength range (band) to pass through and to block the remaining wavelengths.

[0481]

[0482] The second blocking filter (222) is located on the upper layer of the bandpass filter and works together with the second bandpass filter to completely block light of a specific wavelength range.

[0483]

[0484] The second polarizing filter (223) is located on the upper layer of the second blocking filter and serves to remove reflected light or unnecessary polarization components by adjusting the polarization state of the light.

[0485]

[0486] The second photon concentrator (224) is located on the upper layer of the second polarizing filter and collects photons or fluorescent signals filtered through the second bandpass filter, the second blocking filter, and the second polarizing filter, and then transmits them to the second lock-in camera module.

[0487]

[0488] Thus, by configuring the second optical filter unit (220) consisting of a second bandpass filter (221), a second blocking filter (222), a second polarizing filter (223), and a second photon concentrator (224), the signal-to-noise ratio (SNR) can be improved by 80% compared to the existing one, the accuracy of the data collected by the Lock In camera module can be increased by 1.5 to 3 times compared to the existing one, and the efficiency of the second Lock In camera module can be improved by selectively strengthening the desired wavelength band through the filter and blocking unnecessary light.

[0489]

[0490] Third, the second reflector (Elliptic reflector) part (230) according to the present invention will be described.

[0491] The second reflector (Elliptic reflector) part (230) is positioned to surround the battery pressure sensing NV quantum sensor part and the second half ball lens, and the surface facing the battery pressure sensing NV quantum sensor part and the second half ball lens is formed in an elliptical shape, so that it serves to reflect the photon or fluorescent signal generated from the battery pressure sensing NV quantum sensor part and the photon or fluorescent signal reflected from the half ball lens back toward the optical filter part.

[0492] As shown in FIG. 32, this consists of a second support structure body (231), a second elliptical reflective surface (232), and a second reflective coating part (233).

[0493]

[0494] The second support structure body (231) serves to support the battery pressure sensing NV quantum sensor part and the second half ball lens so as to surround them.

[0495] This is configured such that a second elliptical reflective surface is formed in a position facing the battery pressure sensing NV quantum sensor part and the second half ball lens, and a second reflective coating part is formed on the surface of the second elliptical reflective surface.

[0496]

[0497] The second elliptical reflective surface (232) is designed to be elliptical and serves to concentrate and reflect photons or fluorescent signals generated or reflected from the battery pressure sensing NV quantum sensor unit and the second half ball lens toward the second optical filter unit.

[0498]

[0499] The second reflective coating portion (233) is formed as a coating on the surface of the second elliptical reflective surface and serves to increase the reflectivity of photons or fluorescent signals.

[0500] This is formed by coating with aluminum or gold material.

[0501]

[0502] Fourth, the battery pressure sensing NV quantum sensor unit (240) according to the present invention will be described.

[0503] The above battery pressure sensing NV quantum sensor unit (240) is located at the bottom of the second reflector (Elliptic reflector) unit and is in contact with one side of the lithium-ion battery. It plays the role of sensing and detecting the spin change of quantum dots that occurs when the pressure of the lithium-ion battery changes through the NV center composed of nitrogen atoms and vacancy defects within the lattice structure of the diamond, as a photon or fluorescent signal regarding the strain (strain rate, ε) caused by the internal space pressure of the battery.

[0504] This is based on a diamond-based NV center and is composed of useful sensors for DC and AC magnetic fields to enable sensitive and wide-field magnetic imaging under ambient conditions.

[0505] And, using a diamond-based NV center, it is configured to detect frequencies within 10 GHz from DC with a bandwidth of up to 100 kHz.

[0506] Sensitivity sets the weakest magnetic field sensitivity that can be detected with a single signal-to-noise ratio (SNR) in a given bandwidth.

[0507] It is composed of N different diamond-based NV centers in the sensing volume, and has the characteristic of improving sensitivity to √N and reaching a sensitivity level of pT / √Hz.

[0508] In addition, the diamond-based NV center is configured to be used for wide-area magnetic imaging at room temperature.

[0509] Since diamond-based NV centers have four possible orientations within the diamond crystal, they are configured to be used for vector magnetic measurements as well.

[0510] In addition, the ambient operating conditions and high sensitivity of the diamond-based NV center provide a wide frequency range and a strong signal.

[0511]

[0512] As shown in FIG. 39, the above battery pressure sensing NV quantum sensor unit (240) is composed of a second sensor unit body (241), a second qubit metal gate (242), a second microwave strip line gate (243), a seconda quantum dot qubit (244), and a secondb quantum dot qubit (245).

[0513]

[0514] First, the second sensor body (241) according to the present invention will be described.

[0515] The second sensor body (241) is formed in a slim rectangular shape of 1 mm × 1 mm × 1 mm (width × height × depth) and serves to protect and support each device from external pressure.

[0516] As illustrated in FIG. 40, an ion implantation tool dedicated to semiconductors is used to fire an ion beam of nitrogen atoms at the surface diamond lattice and insert it into the crystal, thereby forming a diamond-based NV center (241a) composed of nitrogen atoms and vacancy defects within the diamond lattice structure as illustrated in FIG. 413, and N quantum dot qubits composed of neutron + spin + N14 (Nitrogen-14) + C13 (Carbon-13) are formed.

[0517] Here, thousands or tens of thousands of quantum dot qubits are formed, but for the explanation and understanding according to the present invention, a second quantum dot qubit 2a and a second quantum dot qubit 2b are formed.

[0518] At this time, a second qubit metal gate is formed on one side of the upper surface of the diamond where the seconda quantum dot qubit and the secondb quantum dot qubit are formed, and a second microwave strip line gate is formed on one side of the central line surface of the diamond.

[0519]

[0520] In addition, the second sensor body according to the present invention is formed in various sizes depending on the purpose of use and shape, in addition to the size of 1mm × 1mm × 1mm (width × length × height).

[0521]

[0522] The above diamond-based NV center is formed more specifically through the following process.

[0523]

[0524] First, to remove carbon-based (graphite) impurities attached to the surface of quantum-grade diamonds, a mixed solution of sulfuric acid + sodium nitrate or sulfuric acid + hypochlorite + nitric acid (1:1:1) is sprayed at a high temperature (above 200 degrees).

[0525]

[0526] Next, the interface-treated diamond is formed into a seed diamond through HPHT (High Pressure High Temperature) and CVD (Chemical Vapor Deposition).

[0527] Here, HPHT refers to the synthesis of diamond under high temperature (1300°C) and high pressure (60,000 atmospheres), and CVD (Chemical Vapor Deposition) refers to the formation of a diamond layer by reacting a carbon-containing gas (mainly methane) with hydrogen, thereby depositing carbon atoms in a gaseous state onto a diamond substrate.

[0528]

[0529] Next, the seed diamond is placed in a microwave oven, and as shown in Fig. 42, a diamond layer is formed to grow slowly through oxygen plasma ashing.

[0530] That is, it is performed by including CYTOP spin coating and 180-degree hard baking.

[0531] At this time, a diamond-based NV center is formed as close as possible to the sample.

[0532] And, in the case where the diamond sensor is a flat plate, the layer is formed so as to be very close to the surface.

[0533]

[0534] Next, using a semiconductor-specific ion implantation tool, an ion beam of nitrogen atoms is fired at the diamond lattice on the surface and inserted into the crystal.

[0535] At this time, when implanting the ion beam of nitrogen atoms, it is formed at 1 MeV, 1 E19 / cm2.

[0536] In addition, it contains nitrogen at a level of 10 ppm (based on Diamond Type 1b).

[0537]

[0538] Next, since the arrangement of diamond-based NV centers is important, diamonds are inserted into the surface, and a mask and resistor are used.

[0539] At this time, spin-coating is performed on the pT crystal.

[0540]

[0541] Next, in order to ensure that the correct pattern is placed on the diamond layer, the diamond chip with a fine pattern made by the theograph after removing the resist undergoes a high-temperature annealing step performed in a vacuum.

[0542] That is, after undergoing a 1-hour CYTOP rotary drying and 50-degree soft baking process, thermal deposition of a silver (Ag) mirror is performed.

[0543] At this time, an atomic void is created next to the embedded nitrogen atom.

[0544]

[0545] Finally, a battery pressure sensing NV quantum sensor part is completed in which some electrons are trapped in the empty space of a diamond-based NV center to form electron spins that can be used as quantum dot qubits.

[0546] At this time, the completed battery pressure sensing NV quantum sensor is composed of a structure combining a multi-layer dielectric and a metal reflector, has a size of 3 x 3 x 0.5 mm³, and has NsO and NV- concentrations of 14 ppm and 2.5 ppm, respectively.

[0547] In addition, depending on the purpose and form of use, single-crystal diamond having a diamond-based NV center concentration of 5 ppm to 50 ppm is used and configured.

[0548]

[0549] The diamond-based NV center formed through this process forms several unique functions required for quantum information systems.

[0550]

[0551] First, electron spin has the characteristic of having a very long, consistent time of up to 0.8 to 1.5 seconds.

[0552] This means that it can be controlled with good qubits.

[0553] And, the qubit at this time can be operated over a wide temperature range up to room temperature (290K).

[0554]

[0555] Second, electron spin has the characteristic that it is not the only qubit in a quantum information system.

[0556] This combines with the environment's nuclear spin to provide additional qubits capable of storing and processing quantum information.

[0557]

[0558] In addition, electron spin interacts with photons, the fundamental particles of light.

[0559] This allows quantum states to be sent over long distances and connected to distant diamond-based NV centers, and entangled.

[0560]

[0561] In addition, the second sensor body according to the present invention controls a quantum dot qubit through a second qubit metal gate on one side of the diamond top surface using crossbar technology.

[0562] And, using a limited number of wires connected horizontally and vertically, a much larger number of components, such as quantum dots in a two-dimensional array, can be adjusted.

[0563]

[0564] Through this approach, as illustrated in FIG. 43, 1024 qubits are integrated and configured into a single array of 30 × 30 micrometers or less.

[0565]

[0566] Through this configuration, a second quantum integrated circuit is configured in which different local arrays are interconnected with other local arrays on the same chip using quantum links, which are links capable of transmitting quantum information and entanglement.

[0567]

[0568] The above-mentioned second quantum integrated circuit is designed and fabricated to be capable of capturing more than 99% of photon or fluorescence signals through a structure combining a multi-layer dielectric and a metal reflector.

[0569] That is, a structure that is easy to fabricate by spin-coating a material with a low refractive index (cytop, n=1.35) is selected, a structure is designed to operate in a wide fluorescence emission wavelength band in NV, and the operational performance of the structure is confirmed through FDTD analysis and experiments.

[0570]

[0571] [2nd qubit metal gate (242)]

[0572]

[0573] The second qubit metal gate (242) above serves to transmit a pulse waveform, which controls the quantum dot (QD) energy level and cross-coupling, generated from the second multi-channel pulse waveform generation control unit, to the seconda quantum dot qubit and the secondb quantum dot qubit on one side of the upper surface of the diamond.

[0574] As shown in FIG. 39, this is composed of a seconda qubit metal gate (242a) and a secondb qubit metal gate (242b), with a source and a drain formed on one side.

[0575]

[0576] The above-mentioned seconda qubit metal gate (242a) is connected to the seconda quantum dot qubit and serves to transmit a pulse waveform that controls the quantum dot (QD) energy level and cross-coupling, generated from the second multi-channel pulse waveform generation control unit, to the seconda quantum dot qubit.

[0577]

[0578] The above-mentioned second-b qubit metal gate (242b) is connected to the second-b quantum dot qubit and serves to transmit a pulse waveform that controls the quantum dot (QD) energy level and cross-coupling, generated from the second multi-channel pulse waveform generation control unit, to the second-b quantum dot qubit.

[0579]

[0580] As such, the second qubit metal gate (242), composed of the seconda qubit metal gate (242a) and the secondb qubit metal gate (242b), is configured with 10 channels, 100 channels, 1000 channels, and 10000 channels depending on the purpose and form of use, in addition to 2 channels.

[0581]

[0582] [Second microwave strip line gate (243)]

[0583]

[0584] The second microwave strip line gate (243) is located on one side of the diamond center line surface and receives a resonant microwave pulse generated by the second microwave signal generator and transmits it to the seconda quantum dot qubit and the secondb quantum dot qubit.

[0585] As shown in FIG. 39, when viewed from the planar direction, it is formed and configured as a dumbbell structure with wide sides and a narrow central part.

[0586]

[0587] [2a quantum dot qubit (244)]

[0588]

[0589] The above-mentioned second quantum dot qubit (244) forms a diamond-based NV center composed of nitrogen atoms and vacancy defects within the lattice structure of diamond, and forms neutron + spin + N14 (Nitrogen-14) + C13 (Carbon-13) in the diamond-based NV center space, thereby serving to sense the spin change of the quantum dot that occurs when the pressure of the lithium-ion battery changes as a photon or fluorescent signal related to the strain (strain rate, ε) caused by the pressure in the internal space of the battery.

[0590] As shown in FIG. 44, this consists of a seconda quantum dot (244a), a seconda electron spin portion (244b), and a seconda quantum portion (244c).

[0591]

[0592] The above-mentioned second quantum dot (244a) is a structure in which an electron has quantized energy in a specific energy state and plays a role in changing spin in a specific form when the pressure of the lithium-ion battery changes.

[0593] Here, specific form refers to the +1, 0, -1 form.

[0594]

[0595] The above-mentioned 2a electron spin unit (244b) is an electron spin state that is controlled to a state corresponding to 0 or 1, and plays a role in sensing a photon or fluorescent signal regarding strain (strain rate, ε) caused by the internal space pressure of the battery through the superposition and quantum entanglement of the two states.

[0596]

[0597] The above-mentioned seconda quantum part (244c) is generated as electrons escape, interacts with electrons within the seconda quantum dot, and plays a role in forming the quantum state of the seconda quantum dot.

[0598] Here, a quantum state refers to a state that has a positive charge.

[0599]

[0600] [2b quantum dot qubit (245)]

[0601]

[0602] The above 2b quantum dot qubit (245) is located on one side of the 2a quantum dot qubit, and a diamond-based NV center is formed, which is an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of diamond, and neutron + spin + N14 (Nitrogen-14) + C13 (Carbon-13) is formed in the diamond-based NV center space, and plays a role in sensing the spin change of the quantum dot that occurs when the pressure of the lithium-ion battery changes as a photon or fluorescent signal regarding the strain (strain rate, ε) caused by the internal space pressure of the battery.

[0603] As shown in FIG. 45, this consists of a second-b quantum dot (245a), a second-b electron spin portion (245b), and a second-b quantum portion (245c).

[0604]

[0605] The above 2b quantum dot (245a) is a structure in which an electron has quantized energy in a specific energy state and plays a role in changing spin in a specific form when the pressure of the lithium-ion battery changes.

[0606] Here, specific form refers to the +1, 0, -1 form.

[0607]

[0608] The above-mentioned 2b electron spin unit (245b) is an electron spin state that is controlled to a state corresponding to 0 or 1, and plays a role in sensing a photon or fluorescent signal regarding strain (strain rate, ε) caused by the internal space pressure of the battery through the superposition and quantum entanglement of the two states.

[0609]

[0610] The above 2b quantum section (245c) is generated as electrons escape, interacts with electrons within the second quantum dot, and plays a role in forming the quantum state of the second quantum dot.

[0611] Here, a quantum state refers to a state that has a positive charge.

[0612]

[0613] As such, the battery internal space pressure sensing NV quantum sensor unit (240), composed of a second sensor unit body (241), a second qubit metal gate (242), a second microwave strip line gate (243), a seconda quantum dot qubit (244), and a secondb quantum dot qubit (245), performs detection through a diamond-based NV center as optical detection, as shown in FIG. 46.

[0614]

[0615] And, prior to optical detection, it is detected by a continuous waveform detection technique that detects the strain (strain, ε) generated by the internal space pressure of the battery through the spin shape of the diamond-based NV center as a photon or fluorescent signal.

[0616]

[0617] That is, as illustrated in FIG. 47, the continuous waveform detection technique divides the |ms = ±1> levels and measures the state independently. Since the |ms = ±1> levels of different NV directions in the spin shape of the diamond-based NV center are divided into different amounts depending on the direction of the external magnetic field, these NV directions can be distinguished from each other.

[0618] The green laser generated from the green laser generation control unit excites the spin shape of the diamond-based NV center without resonance, generating a photon or fluorescence signal regarding strain (strain rate, ε) caused by the internal space pressure of the battery that can be detected by the photodiode unit, and the quantum dot qubit control signal generation module sends a resonant microwave (MW) frequency signal to the micro-antenna unit close to the spin shape of the diamond-based NV center to drive spin switching.

[0619]

[0620] Then, while transmitting a photon or fluorescent signal regarding the strain (strain, ε) generated by the internal space pressure of the battery toward the photodiode, the resonant microwave (MW) frequency is swept.

[0621] When the resonant microwave (MW) frequency transitions from the |ms = 0> state to one of the |ms = ±1> states and enters a resonant state, a decrease in the fluorescence signal is observed.

[0622] Changes in fluorescence when the resonant microwave (MW) frequency resonates allow the intelligent battery control module to record the spectrum.

[0623]

[0624] As described above, a battery pressure sensing NV quantum sensor unit (240) is configured with a second sensor unit body (241), a second qubit metal gate (242), a second microwave strip line gate (243), a seconda quantum dot qubit (244), and a secondb quantum dot qubit (245). By sensing photon or fluorescent signals regarding strain (strain, ε) caused by the internal space pressure of the battery, strain (strain, ε) caused by the internal space pressure of the battery can be detected. It can operate stably within a wide frequency range from DC to 10 GHz, maintain consistent performance even in a multi-channel environment, and through dynamic frequency and cross-coupling control, maintain sensitivity in various frequency bands while minimizing signal distortion, thereby improving sensor sensitivity and accuracy by 80%.

[0625]

[0626] Fifth, the second quartz base plate portion (250) according to the present invention will be described.

[0627] The second quartz base plate (250) is located at the bottom of the battery pressure sensing NV quantum sensor and supports the battery pressure sensing NV quantum sensor from the bottom direction, generates an electrical signal when pressure is received from the battery surface, and maintains a constant frequency when there is an external temperature change or mechanical change.

[0628] It is composed of the structure of silicon dioxide (SiO2) and has a hexagonal structure (Alpha) and a trigonal structure (Beta) at high temperatures.

[0629] To maintain piezoelectric properties and natural frequency, it is formed with a fixed crystal structure.

[0630] In addition, the battery pressure sensing NV quantum sensor part is configured to include an oscillator to maintain a stable frequency.

[0631] The thermal conductivity of the quartz base plate is 1.4 [W / m·k], which is more than 2000 times lower than that of diamond, and the diamond-quartz composite structure improves the inaccuracy in pressure measurement caused by the high thermal conductivity of diamond.

[0632]

[0633] In this way, the quartz base plate is positioned at the bottom of the battery pressure sensing NV quantum sensor to support it, thereby improving structural strength and durability. It can operate stably even in extreme environments such as high temperature and high pressure, and can maintain a constant frequency even under high temperature or external stimuli, thus increasing the stability of the electronic device.

[0634]

[0635] Sixth, a second half ball lens (260) according to the present invention will be described.

[0636] The second half ball lens (260) is formed to be covered with a convex lens structure along the upper surface perimeter of the second sensor body and serves to collect photon or fluorescent signals regarding strain (strain rate, ε) generated by the internal space pressure of the battery sensed by the second a quantum dot qubit and the second b quantum dot qubit, and transmit them toward the second reflector (Elliptic reflector) part.

[0637]

[0638] Seventh, the second green laser generation control unit (270) according to the present invention will be described.

[0639] The second green laser generation control unit (270) is located on one side of the battery pressure sensing NV quantum sensor unit and generates a 532nm green laser to stimulate the diamond-based NV center of the battery pressure sensing NV quantum sensor unit, thereby controlling the diamond-based NV center to transition to a high energy state so that a photon or fluorescent signal regarding strain (strain rate, ε) caused by the internal space pressure of the battery, which can be detected by the second Lock In camera module, is generated, and controls the electronic spin state to be initialized.

[0640] Here, the transition of a diamond-based NV center to a high energy state refers to exciting the spin shape of the diamond-based NV center without resonance. Then, a 532 nm green laser is generated with a laser output of 0.1 to 1 W and focused with a lens to form a fluorescence on the surface of the NV quantum sensor with a diameter of approximately 10 to 100 μm. At this time, the NV quantum sensor that receives the 532 nm green laser emits red light (red light) in the 700 nm wavelength range as fluorescence.

[0641] As illustrated in FIG. 48, this consists of a second green laser beam nozzle part (271) that shoots a green laser beam toward the beam splitter part, a second green laser beam generating part (272) that generates a green laser beam, and a second beam splitter part (273) that shoots toward the green laser beam nozzle part.

[0642] In other words, if it returns directly to the ground state by the emission of photons or fluorescence signals, it generates red light.

[0643] When an electron in this state is exposed to a green laser beam, it is lifted to the degenerate state ms = ±1 (in quantum mechanics, the existence of two or more states for a single energy level) and recombined back into M.

[0644] Here, the state where ms=0 emits less red light, so the diamond appears darker.

[0645]

[0646] Eighth, the second quantum dot qubit control signal generation unit (280) according to the present invention will be described.

[0647] The second quantum dot qubit control signal generation unit (280) generates a quantum dot qubit control signal in a frequency range from DC to 10 GHz with a spurious modulation bandwidth of 1 GHz toward the battery pressure sensing NV quantum sensor unit, and plays the role of controlling the quantum dot qubit, which is a component of the battery pressure sensing NV quantum sensor unit.

[0648] More specifically, it is connected to a quantum dot qubit that forms a quantum dot in a diamond-based NV center of the battery pressure sensing NV quantum sensor part.

[0649] Here, quantum dot qubits are electrons located in a quantum dot, represented as quantum bits, and have spin.

[0650] It has characteristics of low phase noise and low spurious tone for high fidelity gates, high output power for short gate pulses without external amplification, and 14-bit output at 6 GSa / s.

[0651] In addition, waiting time can be minimized, quantum dot qubits can be controlled from 2 channels to N channels (1000 to 10000), and high-fidelity quantum dot qubit gate operations can be performed.

[0652] As shown in FIG. 49, the second quantum dot qubit control signal generation unit (280) is composed of a second double superheterodyne algorithm engine unit (281), a second analog output channel unit (282), a second sequencer unit (283), a second low-latency signal processing chain unit (284), a second low-phase noise synthesizer (285), and a second high-output power unit (286).

[0653]

[0654] The above-mentioned second double superheterodyne algorithm engine unit (281) upconverts the frequency of the input signal to generate a quantum dot qubit control signal in a wide frequency band (within 10 GHz from DC).

[0655]

[0656] The second analog output channel section (282) above serves to form an analog output channel that simultaneously controls a plurality of quantum dot qubits.

[0657] This is configured on one side of a box-shaped body by selecting one of 2 channels, 4 channels, 6 channels, 8 channels, or 12 channels.

[0658]

[0659] The second sequencer (283) determines the order of control signals and controls the signal timing between quantum dot qubits.

[0660]

[0661] The above second low-latency signal processing chain (284) performs the role of controlling to minimize signal transmission delay by rapidly processing and transmitting control signals.

[0662] This allows for rapid response to real-time changes in quantum dot qubit states, making it effective in situations requiring a fast reaction.

[0663]

[0664] The second low-phase noise synthesizer (285) above minimizes the phase noise of the control signal and generates a high-fidelity signal.

[0665]

[0666] The above second high-output power unit (286) serves to form a short gate pulse by providing a strong control signal without an external amplifier.

[0667] This enables fast and powerful control of quantum dot qubits, allowing for high-speed quantum gate operations.

[0668]

[0669] Thus, by configuring the second quantum dot qubit control signal generation unit (280) consisting of the second double superheterodyne algorithm engine unit (281), the second analog output channel unit (282), the second sequencer unit (283), the second low-latency signal processing chain unit (284), the second low-phase noise synthesizer (285), and the second high-output power unit (286), a wide frequency range from DC to 10 GHz is supported, a spurious 1 GHz modulation bandwidth is provided, and high-speed control is possible through high output and short gate pulses, thereby making the system response time 1.5 to 2 times faster than the existing one.

[0670]

[0671] Ninth, the second multi-channel pulse waveform generation control unit (290) according to the present invention will be described.

[0672] The above second multi-channel pulse waveform generation control unit (290) is connected to the battery pressure sensing NV quantum sensor unit and plays the role of generating a pulse waveform that controls the quantum dot qubit energy level and cross-coupling toward the battery pressure sensing NV quantum sensor unit and outputting it.

[0673] Here, cross-coupling refers to controlling the coupling between non-adjacent resonators through a coupling window, such as coupling between other resonators rather than sequential coupling between resonators through a coupling window, thereby suppressing unwanted interactions and inducing accurate coupling only when necessary.

[0674] This is formed in a box shape and connected to a battery pressure sensing NV quantum sensor unit, and is configured to include a signal bandwidth of 2.4 GSa / s, 16 bits, and 750 MHz, a second direct mode (291) that maximizes the bandwidth and improves noise performance as shown in FIG. 50, and a second amplification mode (292) that raises the signal amplitude to 5 Vpp.

[0675] In addition, it features 144 output channels, high channel density formation, trigger-output delay of less than 50 ns, and multi-frequency digital modulation.

[0676] In addition, to counteract the effects of cross-coupling, additional pulses are configured to be applied to multiple gates (single-structure qubit metal gates, complex-structure qubit metal gates, microwave strip line gates).

[0677] In addition, to generate a single-structure qubit metal gate, the microwave source is modulated and configured to control quantum dot (QD) qubits and neighboring qubits through frequency multiplexing.

[0678]

[0679] Thus, by configuring the second multi-channel pulse waveform generation control unit, the scalability of the complex quantum system can be maximized to process more quantum dot qubits simultaneously, and a response speed faster than existing technology can be provided with a trigger-output delay of less than 50 ns. Furthermore, by precisely controlling the interaction between quantum dot qubits, highly complex quantum computation tasks and photon sensing tasks regarding battery internal space pressure can be performed with high precision, improved by 80% compared to existing methods.

[0680]

[0681] Tenth, the second microwave signal generating unit (290a) according to the present invention will be described.

[0682] The second microwave signal generation unit (290a) sends a microwave signal toward the battery pressure sensing NV quantum sensor unit to control the spin switching of the quantum dot qubit of the diamond-based NV center.

[0683] Here, sending a microwave signal toward the battery pressure sensing NV quantum sensor means sending a microwave signal toward the microwave antenna in contact with the battery pressure sensing NV quantum sensor.

[0684] As shown in FIG. 51, this consists of a second microwave signal generation unit (290a-1), a second microwave amplifier unit (290a-2), and a second microwave antenna unit (290a-3).

[0685]

[0686] The second microwave signal generation unit (290a-1) generates a resonant microwave pulse and transmits it to the second microwave amplifier. This is configured to include a second dual-frequency driving signal generation control unit (290a-1a).

[0687] As shown in FIG. 52, the second dual frequency driving signal generation control unit (290a-1a) plays the role of controlling to simultaneously generate two transitions, Ms=0↔Ms=-1 and Ms=0↔Ms=+1, through dual frequency driving.

[0688] In other words, if the phase of the Reference signal used in FM is reversed, the lock-in signal of the second lock-in camera module is S LIA = is set to 2αΔB(t).

[0689] In addition, by doubling the signal magnitude or contrast, it can obtain double the sensitivity and eliminate the influence of external temperature changes to a very high degree in extreme environments, thereby having the characteristic of suppressing distortion of the magnetic field signal.

[0690] As illustrated in FIG. 52, the second dual frequency driving signal generation control unit is configured to include a second MW generator (MW1) and a second MW generator (MW2).

[0691] That is, two reference signals (Ref1, Ref2) generated from a phase-synchronized 2-channel signal generator are applied to the second MW generator (MW1) and the second MW generator (MW2) as reference signals required for FM.

[0692] And, when the frequencies of Ref1 and Ref2 are made equal and the phase difference is set to π, if only the change in magnetic field is observed, it is as shown in Figure 1.

[0693]

[0694] In other words, in the case of a single frequency, not only is the magnitude of the 10 Hz signal reduced by half, but baseline drift caused by temperature changes also occurs.

[0695] In addition, since such a phenomenon is not observed at dual frequency, the spin change of quantum dots generated during pressure changes in lithium-ion batteries can be stably measured as a change in magnetic field without being affected by external temperature changes in extreme environments.

[0696]

[0697] The second microwave amplifier (290a-2) above serves to amplify the resonant microwave pulse generated by the second microwave signal generator.

[0698]

[0699] As shown in FIG. 33, the second microwave antenna section (290a-3) sends a resonant microwave pulse toward the quantum dot qubit of the diamond-based NV center to control spin switching.

[0700]

[0701] Thus, the second microwave signal generation unit (290a), composed of the second microwave signal generation unit (290a-1), the second microwave amplifier unit (290a-2), and the second microwave antenna unit (290a-3), shoots a microwave pulse at the quantum dot qubit to make the electron spin up.

[0702] In this case, the pulse must have a very specific frequency, and that frequency depends on the bias magnetic field accompanying the electron.

[0703]

[0704] For example, the resonant microwave pulse is 45 GHz.

[0705] And, the resonant microwave pulse forms a bias magnetic field.

[0706] The bias magnetic field that spin-shifts quantum dot qubits has an electron resonance frequency.

[0707]

[0708] Therefore, when a resonant microwave pulse suitable for them arrives, all electrons are excited and change into a rotational state.

[0709] However, it has the characteristic of being able to stop at any time.

[0710]

[0711] As illustrated in FIG. 53, the spin of the quantum dot qubit is configured to be controlled by applying a resonant microwave pulse.

[0712] In other words, starting with an upward-pointing spin and applying a variable-length resonant microwave pulse, it can be observed that the spin rotates from top to bottom and then returns in a consistent manner.

[0713] Quantum superposition of spin-up and spin-down is generated in the middle of the rotation.

[0714]

[0715] In this case, the spin state is measured through an optical transition.

[0716]

[0717] Diamond-based NV centers have various optical transitions associated with various spin states, such as quantum dot qubits and neighboring quantum dot qubits.

[0718]

[0719] Therefore, as illustrated in FIG. 54, by applying a resonant microwave pulse that resonates only during the spin-up transition, the quantum dot qubit is stimulated only when it spins up, and a photon or fluorescence signal regarding the strain (strain, ε) generated by the internal space pressure of the battery is detected.

[0720]

[0721] Also, if the spin is lowered, the darkness is maintained.

[0722]

[0723] With this configuration and method, through the quantum dot qubit control signal generation module according to the present invention, it is possible to read what state the spin state of the quantum dot qubit is in and what it is.

[0724]

[0725] In this way, the second microwave signal generation unit (290a) is configured with the second microwave signal generation unit (290a-1), the second microwave amplifier unit (290a-2), and the second microwave antenna unit (290a-3), thereby accurately controlling the spin state of the quantum dot qubit and forming a sensing atmosphere capable of detecting photon or fluorescent signals related to strain (strain rate, ε) generated by the internal space pressure of the battery according to the spin state, and detecting high-resolution signals.

[0726]

[0727] Next, a battery surface air cooling / heating module (300) according to the present invention will be described.

[0728] The above battery surface air cooling / heating module (300) is driven according to a control signal of an intelligent battery control module and directs cold air to the battery surface to cool it and dissipate heat, or directs warm air to transfer heat and heat.

[0729] Here, heating is achieved by circulating warm air to heat up, and is operated to prevent the lithium-ion battery from freezing and failing to operate in winter environments of -5°C to -30°C.

[0730] As shown in FIG. 55, this consists of an air-cooled thermoelectric element section (310) and a cooling circulation pipe (320).

[0731]

[0732] First, the air-cooled thermoelectric element part (310) according to the present invention will be described.

[0733] The above air-cooling thermoelectric element (310) is driven according to a control signal from an intelligent battery control module and plays a role in generating a Peltier effect that generates heat-absorbing cold air on one side and heat-generating warmth on the opposite side depending on the direction of current flow.

[0734] As shown in FIG. 56, this consists of an air cooling head fan (311), an air cooling first heat sink (312), an air cooling insulation pad (313), an air cooling thermoelectric element (314), an air cooling second heat sink (315), an air cooling rear fan (316), and a power connection part (317).

[0735]

[0736] [Air cooling head fan (311)]

[0737]

[0738] The above air cooling head fan (311) is located at the tip of the head and receives the heat generated from the air cooling thermoelectric element and transfers the heat generated to the cooling circulation pipe, or receives the heat generated from the air cooling thermoelectric element and transfers the heat generated to the cooling circulation pipe.

[0739] This is driven according to the control signal of the intelligent battery control module.

[0740] The above air cooling head fan (210) and cooling circulation pipe are formed as a single, sealed unit.

[0741]

[0742] [First heat sink for air cooling (312)]

[0743]

[0744] The first heat sink (312) for air cooling is located on one side of the top of the air cooling head fan and on the top of the air cooling insulation pad, and serves to send the warmth of the heat dissipated through the air cooling insulation pad to the cooling circulation pipe through the heat sink.

[0745]

[0746] [Air cooling insulation pad (313)]

[0747]

[0748] The above air cooling insulation pad (313) is located in the center of the first air cooling heat sink and the second air cooling heat sink, and serves to block mutual influence between the first air cooling heat sink and the second air cooling heat sink connected to both ends of the air cooling thermoelectric element.

[0749]

[0750] [Air cooling thermoelectric element (314)]

[0751]

[0752] The above-mentioned air cooling thermoelectric element (314) serves to generate heat-dissipating warmth or heat-absorbing cold through the Peltier effect.

[0753] This is driven according to the control signal of the intelligent battery control module.

[0754]

[0755] [Second heat sink for air cooling (315)]

[0756]

[0757] The second heat sink (315) for air cooling is located at the bottom of the thermoelectric element for air cooling and serves to release heat generated from the heat-generating part of the thermoelectric element module for air cooling to the outside through the heat sink.

[0758]

[0759] [Air cooling rear fan (316)]

[0760]

[0761] The above air cooling rear fan (316) is located at the bottom of the second air cooling heat sink and serves to dissipate heat conducted to the second air cooling heat sink to the outside.

[0762] This is driven according to the control signal of the intelligent battery control module.

[0763]

[0764] [Power connection part (317)]

[0765]

[0766] The above power connection unit (317) serves to supply power to the air cooling thermoelectric element, the air cooling head fan, and the air cooling rear fan.

[0767] This is connected to the main power supply and configured to receive power from the main power supply.

[0768]

[0769] Second, a cooling circulation pipe (320) according to the present invention will be described.

[0770] The above cooling circulation pipe (320) is formed in a zigzag structure in the shape of a rod and comes into contact with the surface of the battery, allowing cold air flowing in from the air-cooling thermoelectric element to cool the surface of the battery, or warm air flowing in from the air-cooling thermoelectric element to heat the surface of the battery.

[0771] This is configured so that the inlet side is connected to an air-cooling head fan and the outlet side is connected to an air-cooling tail fan, allowing for circulation in a circulation structure.

[0772]

[0773] Next, an intelligent battery control module (400) according to the present invention will be described.

[0774] The above intelligent battery control module (400) is connected to the battery temperature sensing NV quantum sensor module, the battery pressure sensing NV quantum sensor module, and the battery surface air cooling / heating module, and controls the overall operation of each device. Based on image spatial information data regarding the temperature of the battery internal space transmitted from the battery temperature sensing NV quantum sensor module and image spatial information data regarding the strain (strain rate, ε) generated by the pressure of the battery internal space transmitted from the battery pressure sensing NV quantum sensor module, it detects changes in peak positions in the ODMR (Optical Detected Magnetic Resonance) spectrum to monitor and control the current temperature of the lithium-ion battery internal space from -50°C to 150°C and the current pressure of the lithium-ion battery internal space from 25KPa to 40MPa in real time, along with predicting battery thermal runaway, and performs the role of controlling the electric vehicle battery short circuit, low voltage protection circuit, power conversion, and driving the battery surface air cooling / heating module.

[0775] This is configured by selecting one of a microcomputer, a microprocessor, or an AI chip (including an NPU and an AI accelerator). It is then formed and configured within the internal space of the control module box.

[0776] The present invention is composed of a microprocessor.

[0777]

[0778] As shown in FIG. 57, the above intelligent battery control module (400) is composed of an ODMR (Optical Detected Magnetic Resonance) spectrum peak position change detection control unit (410), a battery thermal runaway prediction algorithm control unit (420), an electric vehicle battery short circuit control unit (430), a low voltage protection circuit control unit (440), a power conversion control unit (450), and a battery surface air cooling / heating module driving control unit (460).

[0779]

[0780] First, the ODMR (Optical Detected Magnetic Resonance) spectrum peak position change detection control unit (410) according to the present invention will be described.

[0781] The above ODMR (Optical Detected Magnetic Resonance) spectrum peak position change detection control unit (410) performs the role of detecting the shift in the peak position of the spectrum and the change in the spectrum by comparing and analyzing the ODMR (Optical Detected Magnetic Resonance) spectrum according to the battery internal space temperature that is pre-set and the ODMR (Optical Detected Magnetic Resonance) spectrum according to the battery internal space pressure, based on image spatial information data regarding the battery internal space temperature transmitted from the battery temperature sensing NV quantum sensor module and image spatial information data regarding the strain (strain rate, ε) generated by the battery internal space pressure transmitted from the battery pressure sensing NV quantum sensor module.

[0782] As shown in FIG. 58, this consists of a temperature change type ODMR peak shift detector (411) and a pressure change type ODMR peak shift detector (412).

[0783]

[0784] [Temperature change type ODMR peak shift detector (411)]

[0785]

[0786] The above temperature change type ODMR peak shift detection unit (411) compares and analyzes image spatial information data regarding the battery internal space temperature transmitted from the battery temperature sensing NV quantum sensor module with the ODMR (Optical Detected Magnetic Resonance) spectrum according to the battery internal space temperature that is pre-set as a reference, and detects the shift in the peak position of the spectrum to form the current temperature of the lithium-ion battery internal space from -50 degrees to 150 degrees.

[0787] For example, when the temperature of the internal space of a lithium-ion battery reaches 80°C, the position of a specific peak in the ODMR spectrum shifts slightly due to the temperature increase, and this is recognized as a high temperature state with the current temperature of the internal space of the lithium-ion battery being 80°C.

[0788] Based on this, the drive control unit of the battery surface air cooling and heating module operates immediately to lower the battery temperature and perform operations to prevent thermal runaway.

[0789]

[0790] [Pressure change type ODMR peak shift detector (412)]

[0791]

[0792] The pressure change type ODMR peak shift detection unit (412) compares and analyzes image spatial information data regarding strain (strain rate, ε) generated by the internal space pressure of the battery transmitted from the battery pressure sensing NV quantum sensor module with the ODMR (Optical Detected Magnetic Resonance) spectrum according to the internal space pressure of the battery that is pre-set as a reference, and detects a change in the spectrum to form the current pressure of 25KPa to 40MPa in the internal space of the lithium-ion battery.

[0793] The reasons why pressure rises inside a lithium-ion battery during thermal runaway are as follows.

[0794] First, this is because thermal runaway causes the electrolyte inside the lithium-ion battery to decompose and generate gas, leading to a rapid increase in internal pressure.

[0795] Second, this is because the temperature rises due to chemical reactions within the internal space, causing the volume of the gas to expand.

[0796] Third, this is because as the pressure in the internal space increases, the battery cells expand, and force is applied to the battery surface.

[0797]

[0798] The battery pressure sensing NV quantum sensor module forms image spatial information data regarding strain (strain rate, ε) generated by pressure in the internal space on the outer surface of a lithium-ion battery.

[0799] And, strain (distortion rate, ε) is closely linked to the pressure in the internal space of the lithium-ion battery.

[0800] When the pressure inside the lithium-ion battery increases, that pressure is transferred to the surface of the lithium-ion battery, causing surface deformation.

[0801] At this time, the pressure change type ODMR peak shift detection unit compares and analyzes image spatial information data regarding strain (strain rate, ε) generated by the internal space pressure of the battery transmitted from the battery pressure sensing NV quantum sensor module with the ODMR (Optical Detected Magnetic Resonance) spectrum according to the internal space pressure of the battery that is pre-set as a reference, detects a change in the spectrum, and calculates the current pressure of the internal space of the lithium-ion battery.

[0802]

[0803] That is, the strain (strain rate, ε) and the pressure P in the internal space of the lithium-ion battery are expressed as shown in the following mathematical equation 3.

[0804]

[0805]

[0806] Here, P int represents the pressure (Pa) inside the lithium-ion battery, ε represents the strain (deformation, ε) caused by the pressure inside the battery, E represents the elastic modulus (Pa) depending on the material of the lithium-ion battery, and t represents the thickness (mm) of the lithium-ion battery.

[0807]

[0808] Through this process, during thermal runaway, the pressure inside the lithium-ion battery was found to be 40 MPa.

[0809] This is a very high pressure, meaning that a severe pressure rise occurred within the internal space of the lithium-ion battery during thermal runaway.

[0810] And, the internal pressure of a basic lithium-ion battery without thermal runaway was 25KPa.

[0811]

[0812] For example, when the pressure change type ODMR peak shift detection unit described above reaches 5 MPa, the strain change detected by the NV sensor is reflected in the ODMR spectrum, and the pressure in the internal space of the lithium-ion battery is recognized as 5 MPa. At this time, the electric vehicle battery short-circuit control unit is activated to control the disconnection from the electric vehicle battery charging system through a short circuit, or the power conversion control unit is activated to control the supply of power from the lithium-ion battery that has not undergone thermal runaway.

[0813]

[0814] Thus, by configuring an ODMR (Optical Detected Magnetic Resonance) spectrum peak position change detection control unit (410) consisting of a temperature change type ODMR peak shift detection unit (411) and a pressure change type ODMR peak shift detection unit (412), the temperature and pressure of the internal space of the lithium-ion battery can be accurately measured and controlled to optimize the battery condition, thereby increasing the battery's lifespan and performance by 1.5 to 2 times compared to the existing one, and above all, problems that may occur due to temperature or pressure changes can be predicted in advance to create an atmosphere for pre-maintenance.

[0815]

[0816] Second, the battery thermal runaway prediction algorithm control unit (420) according to the present invention will be described.

[0817] The above battery thermal runaway prediction algorithm control unit (420) performs the role of controlling to predict a change exceeding a threshold value by first extracting current battery internal space temperature data and current battery internal space pressure data based on the peak position shift and spectrum change of the spectrum detected by the ODMR (Optical Detected Magnetic Resonance) spectrum peak position change detection control unit, and then comparing and analyzing past battery internal space temperature data and past battery internal space pressure data through machine learning.

[0818] As shown in FIG. 59, this consists of a temperature and pressure data extraction control unit (421), a machine learning analysis control unit (422), a threshold analysis control unit (423), and a control signal output unit (424).

[0819]

[0820] The temperature and pressure data extraction control unit (421) controls the extraction of temperature and pressure data in real time based on the peak position shift and spectrum change of the spectrum detected by the ODMR (Optical Detected Magnetic Resonance) spectrum peak position change detection control unit.

[0821]

[0822] The machine learning analysis control unit (422) plays a role in controlling the current temperature and pressure data of the battery's internal space by comparing and analyzing past battery internal space temperature data and past battery internal space pressure data with the current temperature and pressure data of the battery's internal space through a machine learning algorithm, thereby learning the battery's operating pattern and predicting the possibility of thermal runaway.

[0823] Here, the past battery internal space temperature data and past battery internal space pressure data include the battery internal space temperature data directly measured by a temperature sensor with the lithium-ion battery internal space opened, the battery internal space pressure data directly measured by a pressure sensor with the lithium-ion battery internal space opened, and the battery internal space temperature data and battery internal space pressure data undergoing thermal runaway with the temperature and pressure sensors inserted into the lithium-ion battery internal space.

[0824]

[0825] The above threshold analysis control unit (423) plays the role of analyzing and controlling a danger signal by comparing it with a threshold value when the current temperature and pressure data of the battery internal space deviate from the normal range or when a sudden fluctuation occurs.

[0826]

[0827] The above control signal output unit (424) has the role of outputting a control signal to immediately control the battery state to the electric vehicle battery short circuit control unit, low voltage protection circuit control unit, power switching control unit, and battery surface air cooling / heating module driving control unit when a danger signal, which is a change exceeding the threshold value, is detected through the threshold value analysis control unit.

[0828]

[0829] Third, the electric vehicle battery short circuit control unit (430) according to the present invention will be described.

[0830] The above electric vehicle battery short circuit control unit (430) controls the lithium-ion battery that has experienced thermal runaway to be disconnected from the electric vehicle battery charging system through a short circuit using a high-speed switching element (MOSFET).

[0831] This is configured to prevent additional heat generation in lithium-ion batteries and ensure safe isolation of short-circuited cells.

[0832] In addition, it is configured to maintain the safety of the electric vehicle battery charging system by controlling overvoltage that may occur during a short circuit through a surge suppressor.

[0833]

[0834] Fourth, the low voltage protection circuit control unit (440) according to the present invention will be described.

[0835] The above low voltage protection circuit control unit (440) plays the role of monitoring and controlling so that the voltage of the lithium-ion battery does not drop below a specific limit.

[0836] As shown in FIG. 60, this consists of a voltage detector (441), a comparator (442), a relay switch (443), a control logic circuit (444), and an alarm driving unit (445).

[0837]

[0838] The above voltage sensor (441) serves to sense the voltage of the lithium-ion battery in real time.

[0839]

[0840] The above comparator (442) serves to compare the voltage transmitted from the voltage detector with a preset reference voltage (threshold voltage).

[0841] This sends a signal to the intelligent battery control module when the voltage drops below a reference value, shutting off the electric vehicle battery charging system to prevent the lithium-ion battery from discharging further.

[0842]

[0843] The above relay switch (443) acts as a switch to cut off the power to the battery.

[0844]

[0845] The above control logic circuit section (444) performs the role of control logic that determines the operation of the low voltage protection circuit.

[0846] This is configured to process signals from voltage sensors and comparators, and to drive relay switches to protect the lithium-ion battery and the system.

[0847]

[0848] The above alarm driving unit (445) performs the role of notifying the user when the lithium-ion battery reaches a low voltage state.

[0849] This consists of LED indicator lights, warning sounds, or system warning messages.

[0850]

[0851] Fifth, the power switching control unit (450) according to the present invention will be described.

[0852] The power switching control unit (450) above automatically changes the power supply from the lithium-ion battery that has experienced thermal runaway and controls the power supply to be received from the lithium-ion battery that has not experienced thermal runaway.

[0853] As shown in FIG. 61, this consists of a BMS unit (451) and a power switching switch (452).

[0854]

[0855] The above BMS (Battery Management System) unit (451) plays the role of comprehensively monitoring and managing the battery's condition (voltage, temperature, charge state, etc.).

[0856]

[0857] The above power switching switch (452) performs the role of switching to change the power supply path.

[0858] This consists of a MOSFET or a relay switch.

[0859]

[0860] Sixth, the battery surface air cooling / heating module drive control unit (460) according to the present invention will be described.

[0861] The above battery surface air cooling / heating module drive control unit (460) is connected to the battery surface air cooling / heating module and plays a role in controlling the battery surface air cooling / heating module to drive when a temperature and pressure exceeding a reference value are detected in the lithium-ion battery due to thermal runaway.

[0862]

[0863] Thus, by configuring an intelligent battery control module (400) consisting of an OODMR (Optical Detected Magnetic Resonance) spectrum peak position change detection control unit (410), a battery thermal runaway prediction algorithm control unit (420), an electric vehicle battery short circuit control unit (430), a low voltage protection circuit control unit (440), a power conversion control unit (450), and a battery surface air cooling / heating module drive control unit (460), it is possible to detect even minute changes and take action within the internal space temperature range of -50°C to 150°C and the pressure range of 25KPa to 40MPa of the lithium-ion battery based on the ODMR spectrum, thereby enabling real-time monitoring of the lithium-ion battery, reducing battery explosions and fires to 60% or less compared to conventional methods, and in the event of thermal runaway, rapidly cooling can be performed through the battery surface air cooling module drive control unit, thereby ensuring the safety of the lithium-ion battery and preventing the spread of thermal runaway to other lithium-ion batteries. there is.

[0864]

[0865] Hereinafter, a specific process of a hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control method comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor according to the present invention will be described.

[0866]

[0867] FIG. 63 is a flowchart illustrating a method for controlling temperature and pressure sensing in the internal space of a lithium-ion battery using a hybrid NV quantum sensor type, comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor according to the present invention.

[0868]

[0869] First, as shown in FIG. 62, in a battery temperature sensing NV quantum sensor module in contact with one outer surface of a lithium-ion battery, the spin change of a quantum dot generated when the internal space temperature of the lithium-ion battery changes is sensed as a photon or fluorescence signal regarding the internal space temperature of the battery through an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of a diamond (S10).

[0870] That is, as illustrated in FIG. 64, the first green laser generation control unit generates a 532nm green laser to stimulate the diamond-based NV center of the battery temperature sensing NV quantum sensor unit, thereby controlling the diamond-based NV center to transition to a high energy state so that a photon or fluorescence signal regarding the battery internal space temperature, which can be detected by the first Lock In camera unit, is generated, and the electronic spin state is initialized (S11).

[0871] Next, through the first quantum dot qubit control signal generation unit, a quantum dot qubit control signal with a frequency range within DC to 10 GHz with a spurious 1 GHz modulation bandwidth is generated toward the battery temperature sensing NV quantum sensor unit, thereby controlling the quantum dot qubit, which is a component of the battery temperature sensing NV quantum sensor unit (S12).

[0872] Next, through the first multi-channel pulse waveform generation control unit, a pulse waveform that controls the quantum dot qubit energy level and cross-coupling is generated and output controlled toward the battery temperature sensing NV quantum sensor unit (S13).

[0873] Next, the first microwave signal generation unit sends a microwave signal toward the battery temperature sensing NV quantum sensor unit to control the spin switching of the quantum dot qubit of the diamond-based NV center. At this time, the spin change of the quantum dot generated when the temperature of the lithium-ion battery changes is sensed as a photon or fluorescence signal related to the temperature of the internal space of the battery (S14).

[0874]

[0875] Next, a photon or fluorescence signal regarding the internal space temperature of the battery sensed is locked in and measured through the battery temperature sensing NV quantum sensor module to form image space information regarding the internal space temperature of the battery (S20).

[0876] That is, as illustrated in FIG. 65, the spin change of a quantum dot generated during a temperature change of a lithium-ion battery is sensed and detected as a photon or fluorescence signal regarding the temperature of the internal space of the battery through the battery temperature sensing NV quantum sensor unit, through the NV center composed of nitrogen atoms and vacancy defects within the lattice structure of diamond (S21).

[0877] Next, the first quartz base plate generates an electrical signal when pressure is received from the battery surface, and maintains a constant frequency when there is an external temperature change or mechanical change (S22).

[0878] Next, at the first half ball lens, photon or fluorescence signals regarding the battery internal space temperature sensed by the firsta quantum dot qubit and the firstb quantum dot qubit of the battery temperature sensing NV quantum sensor part are collected and transmitted to the first reflector (Elliptic reflector) part (S23).

[0879] Next, the photon or fluorescent signal generated from the battery temperature sensing NV quantum sensor unit and the photon or fluorescent signal reflected from the first half ball lens are reflected back toward the first optical filter unit through the first reflector (Elliptic reflector) (S24).

[0880] Next, the photon or fluorescence signal transmitted from the first elliptic reflector is collected and optically filtered through the first optical filter unit, and then transmitted to the first lock-in camera unit (S25).

[0881] Next, through the first lock-in camera unit, the photon or fluorescence signal transmitted from the first optical filter unit is locked in at each pixel, and then image spatial information regarding the temperature of the battery internal space is formed based on the locked-in image (S26).

[0882]

[0883] Next, as illustrated in FIG. 62, in a battery pressure sensing NV quantum sensor module in contact with the other outer surface of a lithium-ion battery, the spin change of a quantum dot generated when the internal space pressure of the lithium-ion battery changes is sensed as a photon or fluorescence signal regarding strain (strain rate, ε) caused by the internal space pressure of the battery through an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of a diamond (S30).

[0884] That is, as illustrated in FIG. 66, the second green laser generation control unit generates a 532nm green laser to stimulate the diamond-based NV center of the battery pressure sensing NV quantum sensor unit, thereby controlling the diamond-based NV center to transition to a high energy state so that a photon or fluorescent signal regarding the battery internal space pressure, which can be detected by the second Lock In camera unit, is generated, and the electronic spin state is initialized (S31).

[0885] Next, through the second quantum dot qubit control signal generation unit, a quantum dot qubit control signal with a frequency range from DC to 20 GHz with a spurious 2 GHz modulation bandwidth is generated toward the battery pressure sensing NV quantum sensor unit, thereby controlling the quantum dot qubit, which is a component of the battery pressure sensing NV quantum sensor unit (S32).

[0886] Next, through the second multi-channel pulse waveform generation control unit, a pulse waveform that controls the quantum dot qubit energy level and cross-coupling is generated and output controlled toward the battery pressure sensing NV quantum sensor unit (S33).

[0887] Next, the second microwave signal generation unit sends a microwave signal toward the battery pressure sensing NV quantum sensor unit to control the spin switching of the quantum dot qubit of the diamond-based NV center. At this time, the spin change of the quantum dot generated when the pressure of the lithium-ion battery changes is sensed as a photon or fluorescence signal related to the pressure of the internal space of the battery (S34).

[0888]

[0889] Next, a photon or fluorescence signal regarding strain (strain rate, ε) caused by the sensed internal space pressure of the battery is locked in and measured through the battery pressure sensing NV quantum sensor unit to form image space information regarding strain (strain rate, ε) caused by the internal space pressure of the battery (S40).

[0890]

[0891] That is, as illustrated in FIG. 67, the spin change of a quantum dot generated during a pressure change of a lithium-ion battery is sensed and detected as a photon or fluorescence signal related to the internal space pressure of the battery through the battery pressure sensing NV quantum sensor unit, through the NV center composed of nitrogen atoms and vacancy defects within the lattice structure of diamond (S41).

[0892] Next, the second quartz base plate generates an electrical signal when pressure is received from the battery surface, and maintains a constant frequency when there is a change in external pressure or mechanical change (S42).

[0893] Next, at the second half ball lens, photon or fluorescence signals regarding the internal space pressure of the battery sensed by the seconda quantum dot qubit and the secondb quantum dot qubit of the battery pressure sensing NV quantum sensor part are collected and transmitted to the second reflector (Elliptic reflector) part (S43).

[0894] Next, the photon or fluorescence signal generated from the battery pressure sensing NV quantum sensor unit and the photon or fluorescence signal reflected from the second half ball lens are reflected back toward the second optical filter unit through the second reflector (Elliptic reflector) (S44).

[0895] Next, the photon or fluorescence signal transmitted from the second elliptic reflector is collected and optically filtered through the second optical filter unit, and then transmitted to the second lock-in camera unit (S45).

[0896] Next, through the second lock-in camera unit, the photon or fluorescence signal transmitted from the second optical filter unit is locked in at each pixel, and then image spatial information regarding the internal space pressure of the battery is formed based on the locked-in measured image (S46).

[0897]

[0898] Next, through an intelligent battery control module, based on image spatial information data regarding the temperature of the battery internal space transmitted from the battery temperature sensing NV quantum sensor unit and image spatial information data regarding the strain (strain rate, ε) generated by the pressure of the battery internal space transmitted from the battery pressure sensing NV quantum sensor unit, a change in the peak position in the ODMR (Optical Detected Magnetic Resonance) spectrum is detected to monitor and control the current temperature of the lithium-ion battery internal space from -50°C to 150°C and the current pressure of the lithium-ion battery internal space from 25KPa to 40MPa in real time (S50).

[0899]

[0900] Next, through an intelligent battery control module, the current temperature and pressure data of the battery's internal space are compared and analyzed with past temperature data and past pressure data of the battery's internal space to learn the battery's operating pattern and control the possibility of thermal runaway occurring (S60).

[0901] That is, as illustrated in FIG. 68, the temperature and pressure data of the current internal space of the battery is controlled to be extracted in real time based on the shift in the peak position of the spectrum and the change in the spectrum detected by the ODMR (Optical Detected Magnetic Resonance) spectrum peak position change detection control unit through the temperature and pressure data extraction control unit (S61).

[0902]

[0903] Next, the machine learning analysis control unit controls the current temperature and pressure data of the battery's internal space by comparing and analyzing past temperature data of the battery's internal space and past pressure data of the battery's internal space through a machine learning algorithm to learn the battery's operating pattern and predict the possibility of thermal runaway (S62).

[0904]

[0905] Next, in the threshold analysis control unit, if the current temperature and pressure data of the battery internal space deviate from the normal range or a sudden fluctuation occurs, a danger signal is analyzed and controlled by comparing it with the threshold value (S63).

[0906]

[0907] Next, when a danger signal, which is a change exceeding a threshold value, is detected in the control signal output unit through the threshold value analysis control unit, a control signal is output to the electric vehicle battery short circuit control unit, low voltage protection circuit control unit, power switching control unit, and battery surface air cooling / heating module driving control unit to immediately control the battery state (S64).

[0908]

[0909] Finally, as illustrated in FIG. 62, when thermal runaway of the lithium-ion battery is detected early through the intelligent battery control module, one or more of the electric vehicle battery short circuit control, low voltage protection circuit control, power switching control, and battery surface air cooling module driving control are controlled (S70).

[0910] In other words, the electric vehicle battery short-circuit control unit controls the lithium-ion battery, which has experienced thermal runaway, to be disconnected from the electric vehicle battery charging system through a short circuit using a high-speed switching device (MOSFET).

[0911] In addition, the low-voltage protection circuit control unit monitors and controls the lithium-ion battery so that its voltage does not drop below a specific limit.

[0912] In addition, the power switching control unit automatically switches from receiving power from a lithium-ion battery that has experienced thermal runaway to receiving power from a lithium-ion battery that has not experienced thermal runaway.

[0913] In addition, the battery surface air cooling / heating module drive control unit is connected to the battery surface air cooling / heating module, and controls the battery surface air cooling / heating module to operate when a temperature and pressure exceeding a reference value are detected in the lithium-ion battery due to thermal runaway.

[0914] At this time, the battery surface air cooling and heating module is operated to directly flow cold air onto the battery surface, cooling it while dissipating heat.

[0915] The present invention relates to a hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing and control device and method, comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, wherein the battery internal space temperature and pressure sensing and control device is configured to contact the outer surface of a lithium-ion battery and to sense and control the current internal space temperature and pressure of the lithium-ion battery through a spin change of a quantum dot formed by an NV center composed of a nitrogen atom and a vacancy defect within a diamond lattice structure, and is industrially applicable.

Claims

1. A battery temperature sensing NV quantum sensor module that contacts one outer surface of a lithium-ion battery and, through an NV center composed of nitrogen atoms and vacancy defects within a diamond lattice structure, senses the spin change of a quantum dot generated when the internal space temperature of the lithium-ion battery changes as a photon or fluorescence signal regarding the battery internal space temperature, and then locks in and measures the sensed photon or fluorescence signal regarding the battery internal space temperature to form image spatial information regarding the battery internal space temperature; A battery pressure sensing NV quantum sensor module that contacts the other outer surface of a lithium-ion battery and, through an NV center composed of nitrogen atoms and vacancy defects within a diamond lattice structure, senses the spin change of a quantum dot generated upon a change in the internal space pressure of the lithium-ion battery as a photon or fluorescence signal regarding strain (strain rate, ε) caused by the battery's internal space pressure, and then locks in and measures the sensed photon or fluorescence signal regarding the strain caused by the battery's internal space pressure to form image spatial information regarding the strain caused by the battery's internal space pressure; A battery surface air cooling and heating module that is driven according to a control signal of an intelligent battery control module, cools the battery surface by flowing cold air directly over it to dissipate heat, or heats it by flowing warm air directly over it to transfer heat, and Battery Temperature Sensing NV Quantum Sensor and Battery Pressure Sensing, comprising an intelligent battery control module connected to a battery temperature sensing NV Quantum Sensor module, a battery pressure sensing NV Quantum Sensor module, and a battery surface air cooling / heating module; controlling the overall operation of each device; and detecting changes in peak positions in the ODMR (Optical Detected Magnetic Resonance) spectrum based on image spatial information data regarding the battery internal space temperature transmitted from the battery temperature sensing NV Quantum Sensor module and image spatial information data regarding strain caused by the battery internal space pressure transmitted from the battery pressure sensing NV Quantum Sensor module to monitor and control the current temperature of the lithium-ion battery internal space from -50°C to 150°C and the current pressure of the lithium-ion battery internal space from 25KPa to 40MPa in real time, along with predicting battery thermal runaway, and controlling electric vehicle battery short-circuit, low-voltage protection circuit, power switching, and the operation of the battery surface air cooling / heating module. Hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing and control device composed of NV quantum sensors.

2. In paragraph 1, the battery temperature sensing NV quantum sensor module is A first Lock In camera unit positioned at the top of the first optical filter unit, which locks in and measures a photon or fluorescence signal transmitted from the first optical filter unit at each pixel, and forms image spatial information regarding the temperature of the battery internal space based on the locked-in measured image; A first optical filter unit located at the bottom of the first lock-in camera unit, which collects photon or fluorescence signals transmitted from a first elliptic reflector, optically filters them, and transmits them toward the first lock-in camera unit; A first reflector (Elliptic reflector) section positioned to surround the battery temperature sensing NV quantum sensor section and the first half-ball lens, and reflecting the photon or fluorescent signal generated from the battery temperature sensing NV quantum sensor section and the photon or fluorescent signal reflected from the half-ball lens back toward the first optical filter section, and A battery temperature sensing NV quantum sensor unit located at the bottom of the first reflector unit and in contact with one side of the lithium-ion battery, which detects spin changes of quantum dots generated during temperature changes of the lithium-ion battery as photon or fluorescence signals related to the temperature of the internal space of the battery through an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of a diamond, and A first quartz base plate portion located at the bottom of the battery temperature sensing NV quantum sensor portion, supporting the battery temperature sensing NV quantum sensor portion from the bottom direction, generating an electrical signal when receiving pressure from the battery surface, and maintaining a constant frequency during external temperature changes or mechanical changes; A first half-ball lens formed to be covered by a convex lens structure along the perimeter of the upper surface of the first sensor unit body, collecting photon or fluorescence signals regarding the battery internal space temperature sensed by the firsta quantum dot qubit and the firstb quantum dot qubit of the battery temperature sensing NV quantum sensor unit and transmitting them toward the first reflector unit, A first green laser generation control unit located on one side of the battery temperature sensing NV quantum sensor unit, which generates a 532nm green laser to stimulate the diamond-based NV center of the battery temperature sensing NV quantum sensor unit, thereby controlling the diamond-based NV center to transition to a high energy state to generate a photon or fluorescence signal regarding the battery internal space temperature detectable by the first lock-in camera unit, and controlling the electronic spin state to be initialized; A first quantum dot qubit control signal generation unit that generates a quantum dot qubit control signal in a frequency range within DC to 10 GHz with a spurious 1 GHz modulation bandwidth toward the battery temperature sensing NV quantum sensor unit to control a quantum dot qubit, which is a component of the battery temperature sensing NV quantum sensor unit; A first multi-channel pulse waveform generation control unit connected to a battery temperature sensing NV quantum sensor unit and outputting a pulse waveform that controls the quantum dot qubit energy level and cross-coupling toward the battery temperature sensing NV quantum sensor unit, and A hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, wherein the first microwave signal generating unit is configured to send a microwave signal toward the battery temperature sensing NV quantum sensor unit to control the spin switching of a quantum dot qubit of a diamond-based NV center.

3. In paragraph 2, the first lock-in camera unit A first lock-in measurement element that separates a specific signal from noise and extracts only a pure signal through synchronization with a periodic input signal, and A first microlens-type light receiver formed of a microlens, which concentrates light reaching each pixel to detect and receive a large amount of light, and A first camera sensor that converts light entering through a microlens-type light receiver into an electrical signal and digitizes the image of the lock-in measurement, and A hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, characterized by being composed of a first lock-in image control unit that controls the formation of image spatial information regarding the battery internal space temperature by measuring a spatial temperature distribution based on an image of a lock-in measurement digitized through a first camera sensor.

4. In paragraph 2, the first optical filter part A first bandpass filter that allows only light within a specific wavelength range (band) to pass through and blocks the remaining wavelengths, and A first blocking filter located on the upper layer of the bandpass filter, which operates together with the first bandpass filter and completely blocks light of a specific wavelength range, and A first polarizing filter located on the upper layer of a first blocking filter, which adjusts the polarization state of light to remove reflected light or unnecessary polarization components, and A hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, characterized by being composed of a first photon concentrator located on the upper layer of a first polarizing filter, which collects photon or fluorescent signals filtered through a first bandpass filter, a first blocking filter, and a first polarizing filter, optically filters them, and then transmits them toward a first lock-in camera unit.

5. In paragraph 2, the battery temperature sensing NV quantum sensor part A first sensor unit body that protects and supports each device from external pressure, and A first qubit metal gate on one side of the upper surface of a diamond, which transmits a pulse waveform generated from a first multichannel pulse waveform generation control unit for controlling quantum dot (QD) energy levels and cross-coupling to a firsta quantum dot qubit and a firstb quantum dot qubit, and A first microwave strip line gate located on one side of the diamond center line surface, receiving a resonant microwave pulse generated by a first microwave signal generator and transmitting it toward a firsta quantum dot qubit and a firstb quantum dot qubit, and A diamond-based NV center composed of nitrogen atoms and vacancy defects is formed within the lattice structure of diamond, and neutron + spin + N14 (Nitrogen-14) + C13 (Carbon-13) is formed in the diamond-based NV center space, and a first quantum dot qubit that senses spin changes of quantum dots generated during temperature changes of a lithium-ion battery as photon or fluorescence signals related to the temperature of the battery's internal space, and A hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, characterized by being configured such that a diamond-based NV center, which is an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of a diamond, is located on one side of a first quantum dot qubit, and a neutron + spin + N14 (Nitrogen-14) + C13 (Carbon-13) is formed in the diamond-based NV center space, and a first b quantum dot qubit senses the spin change of the quantum dot generated during a temperature change of the lithium-ion battery as a photon or fluorescence signal related to the temperature of the battery internal space.

6. In paragraph 5, the first sensor unit main body A hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, characterized by using a semiconductor-specific ion implantation tool to fire an ion beam of nitrogen atoms at a surface diamond lattice and insert it into the crystal, thereby forming a diamond-based NV center composed of nitrogen atoms and vacancy defects within the diamond lattice structure, and forming N quantum dot qubits composed of neutron + spin + N14 (Nitrogen-14) + C13 (Carbon-13).

7. In paragraph 1, the battery pressure sensing NV quantum sensor module is A second lock-in camera unit positioned at the top of the second optical filter unit, which locks in and measures a photon or fluorescence signal transmitted from the second optical filter unit at each pixel, and forms image spatial information regarding the internal space pressure of the battery based on the locked-in measured image; A second optical filter unit located at the bottom of the second lock-in camera module and formed in a square shape, which collects photon or fluorescence signals transmitted from the second elliptical reflector, optically filters them, and transmits them toward the second lock-in camera module; A second reflector (Elliptic reflector) that is positioned to surround the battery pressure sensing NV quantum sensor unit and the second half ball lens, and whose surface facing the battery pressure sensing NV quantum sensor unit and the second half ball lens is formed in an elliptical shape, and which reflects the photon or fluorescent signal generated from the battery pressure sensing NV quantum sensor unit and the photon or fluorescent signal reflected from the half ball lens back toward the optical filter unit; A battery pressure sensing NV quantum sensor unit located at the bottom of the second reflector unit and in contact with one side of the lithium-ion battery, which detects spin changes of quantum dots generated during pressure changes of the lithium-ion battery by sensing them as photon or fluorescent signals related to strain (distortion rate, ε) generated by the internal space pressure of the battery through an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of diamond; A second quartz base plate part located at the bottom of the battery pressure sensing NV quantum sensor part, supporting the battery pressure sensing NV quantum sensor part from the bottom direction, generating an electrical signal when receiving pressure from the battery surface, and maintaining a constant frequency in the event of external temperature changes or mechanical changes; A second half-ball lens formed to be covered by a convex lens structure along the perimeter of the upper surface of the second sensor body, collecting photon or fluorescence signals related to strain (strain rate, ε) generated by the battery internal space pressure sensed by the seconda quantum dot qubit and the secondb quantum dot qubit, and transmitting them toward the second reflector part; A second green laser generation control unit located on one side of the battery pressure sensing NV quantum sensor unit, which generates a 532nm green laser to stimulate the diamond-based NV center of the battery pressure sensing NV quantum sensor unit, thereby controlling the diamond-based NV center to transition to a high energy state to generate a photon or fluorescence signal regarding strain (strain rate, ε) caused by the battery internal space pressure detectable by the second lock-in camera module, and controlling the electronic spin state to be initialized; A second quantum dot qubit control signal generation unit that generates a quantum dot qubit control signal in a frequency range within DC to 10 GHz with a spurious 1 GHz modulation bandwidth toward the battery pressure sensing NV quantum sensor unit to control a quantum dot qubit that is a component of the battery pressure sensing NV quantum sensor unit, and A second multi-channel pulse waveform generation control unit connected to a battery pressure sensing NV quantum sensor unit and outputting a pulse waveform that controls the quantum dot qubit energy level and cross-coupling toward the battery pressure sensing NV quantum sensor unit, and A hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, characterized by being composed of a second microwave signal generation unit that sends a microwave signal toward a battery pressure sensing NV quantum sensor unit to control the spin switching of a quantum dot qubit of a diamond-based NV center.

8. In paragraph 1, the battery surface air cooling / heating module is An air-cooling thermoelectric element section that is driven according to a control signal from an intelligent battery control module and generates a Peltier effect that produces cool air by endothermic reaction on one side and warm air by exothermic reaction on the opposite side depending on the direction of current flow, and A hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, characterized by being composed of a cooling circulation pipe formed in a rod shape with a zigzag structure, which contacts the battery surface and cools the battery surface by flowing cold air introduced from an air-cooling thermoelectric element part, or heats the battery surface by flowing warm air introduced from an air-cooling thermoelectric element part.

9. In claim 8, the air-cooled thermoelectric element part An air cooling head fan located at the tip of the head, which receives heat dissipation generated by an air cooling thermoelectric element and transfers the heat dissipation heat toward the cooling circulation pipe, or receives heat absorption cold generated by an air cooling thermoelectric element and transfers the heat absorption cold toward the cooling circulation pipe, and A first heat sink for air cooling, positioned on one side of the lower part of the head fan for air cooling and positioned on the upper part of the insulation pad for air cooling, and which sends the warmth of the heat dissipated through the insulation pad for air cooling toward the cooling circulation pipe through the heat sink, and An air cooling insulation pad located in the center of the first air cooling heat sink and the second air cooling heat sink, which blocks mutual influence between the first air cooling heat sink and the second air cooling heat sink connected to both ends of the air cooling thermoelectric element, and A thermoelectric element for air cooling that generates heat dissipation warmth or heat absorption cold through the Peltier effect, and A second heat sink for air cooling located at the bottom of the air cooling thermoelectric element, which dissipates heat generated from the heat-generating part of the air cooling thermoelectric element module to the outside through the heat sink, and An air cooling rear fan located at the bottom of the second air cooling heat sink and dissipating heat conducted to the second air cooling heat sink to the outside, and A hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, characterized by being composed of a thermoelectric element for air cooling, a head fan for air cooling, and a power connection part that supplies power to a rear fan for air cooling.

10. In paragraph 1, the intelligent battery control module An ODMR spectrum peak position change detection control unit that detects peak position shifts and spectrum changes by comparing and analyzing the ODMR spectrum according to a preset reference battery internal space temperature and the ODMR spectrum according to the battery internal space pressure, based on image spatial information data regarding the battery internal space temperature transmitted from the battery temperature sensing NV quantum sensor unit and image spatial information data regarding strain (deformation rate, ε) generated by the battery internal space pressure transmitted from the battery pressure sensing NV quantum sensor unit; A battery thermal runaway prediction algorithm control unit that controls to predict changes exceeding a threshold value by first extracting current battery internal space temperature data and current battery internal space pressure data based on the spectrum peak position shift and spectrum change detected by the ODMR spectrum peak position change detection control unit, and comparing and analyzing past battery internal space temperature data and past battery internal space pressure data through machine learning. An electric vehicle battery short-circuit control unit that controls a lithium-ion battery in which thermal runaway has occurred to be disconnected from an electric vehicle battery charging system through a short circuit using a high-speed switching device (MOSFET), and A voltage protection circuit control unit that monitors and controls the voltage of a lithium-ion battery so that it does not drop below a specific limit, and A power switching control unit that automatically changes the power supply from a lithium-ion battery that has experienced thermal runaway to a lithium-ion battery that has not experienced thermal runaway, and A hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, characterized by being composed of a battery surface air cooling and heating module driving control unit connected to the battery surface air cooling and heating module, which controls the driving of the battery surface air cooling and heating module when a temperature and pressure exceeding a reference value are detected in the lithium-ion battery due to thermal runaway.

11. In item 10, the above ODMR spectrum peak position change detection control unit A temperature change type ODMR peak shift detection unit that forms a current temperature of -50°C to 150°C in the internal space of a lithium-ion battery by detecting a shift in the peak position of the spectrum, after comparing and analyzing image spatial information data regarding the internal space temperature of the battery transmitted from the battery temperature sensing NV quantum sensor unit with an ODMR spectrum according to a preset reference temperature of the internal space of the battery, and A hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, characterized by comprising a pressure change type ODMR peak shift detection unit that forms a current pressure of 25KPa to 40MPa in the internal space of a lithium-ion battery by comparing and analyzing image spatial information data regarding strain (strain rate, ε) generated by the internal space pressure of the battery transmitted from the battery pressure sensing NV quantum sensor unit with an ODMR spectrum according to a preset reference internal space pressure of the battery, and detecting a change in the spectrum.

12. In Clause 10, the battery thermal runaway prediction algorithm control unit A temperature and pressure data extraction control unit that controls the extraction of temperature and pressure data of the current battery internal space in real time based on the peak position shift and spectrum change of the spectrum detected by the ODMR spectrum peak position change detection control unit, and A machine learning analysis control unit that controls to predict the possibility of thermal runaway by learning the battery's operating pattern through a machine learning algorithm by comparing and analyzing current battery internal space temperature and pressure data with past battery internal space temperature data and past battery internal space pressure data, and A threshold analysis control unit that analyzes and controls a danger signal by comparing it with a threshold value when current temperature and pressure data within the battery's internal space deviate from the normal range or rapid fluctuations occur, and A hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, characterized by being composed of a control signal output unit that outputs a control signal to immediately control the battery state toward an electric vehicle battery short circuit control unit, a low voltage protection circuit control unit, a power switching control unit, and a battery surface air cooling and heating module driving control unit when a danger signal, which is a change exceeding a threshold value, is detected through a threshold value analysis control unit.

13. A battery temperature sensing NV quantum sensor module in contact with one outer surface of a lithium-ion battery, a step of sensing a spin change of a quantum dot generated during a temperature change in the internal space of the lithium-ion battery as a photon or fluorescence signal regarding the temperature of the battery's internal space through an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of a diamond, and A step of forming image spatial information regarding the temperature of the internal space of the battery by locking in and measuring a photon or fluorescence signal regarding the temperature of the internal space of the battery sensed through a battery temperature sensing NV quantum sensor module, and In a battery pressure sensing NV quantum sensor module in contact with the other outer surface of a lithium-ion battery, the step of sensing the spin change of a quantum dot generated during a change in the internal space pressure of the lithium-ion battery as a photon or fluorescence signal regarding strain (strain rate, ε) generated by the internal space pressure of the battery through an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of diamond, and A step of forming image space information regarding strain (strain, ε) generated by the internal space pressure of the battery by locking in and measuring a photon or fluorescence signal through a battery pressure sensing NV quantum sensor module, and A step of real-time monitoring and control of the current temperature of the lithium-ion battery internal space from -50°C to 150°C and the current pressure of the lithium-ion battery internal space from 25KPa to 40MPa by detecting changes in peak positions in the ODMR spectrum based on image spatial information data regarding the temperature of the battery internal space transmitted from the battery temperature sensing NV quantum sensor module and image spatial information data regarding strain (strain rate, ε) generated by the pressure of the battery internal space transmitted from the battery pressure sensing NV quantum sensor module through an intelligent battery control module; A step of controlling to predict the possibility of thermal runaway by learning the battery's operating pattern through an intelligent battery control module by comparing and analyzing current battery internal space temperature and pressure data with past battery internal space temperature data and past battery internal space pressure data, and A hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control method comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, characterized by controlling one or more of electric vehicle battery short circuit control, low voltage protection circuit control, power switching control, and battery surface air cooling module driving control when thermal runaway of the lithium-ion battery is detected early through an intelligent battery control module.

14. In Paragraph 13, the above step A step of controlling, in the first green laser generation control unit, to generate a 532nm green laser to stimulate the diamond-based NV center of the battery temperature sensing NV quantum sensor unit, so that the diamond-based NV center transitions to a high energy state to generate a photon or fluorescence signal regarding the battery internal space temperature detectable by the first lock-in camera unit, and to control the electronic spin state to be initialized; A step of controlling a quantum dot qubit, which is a component of the battery temperature sensing NV quantum sensor unit, by generating a quantum dot qubit control signal with a frequency range within DC to 10 GHz with a spurious 1 GHz modulation bandwidth toward the battery temperature sensing NV quantum sensor unit through the first quantum dot qubit control signal generation unit, and A step of generating and outputting a pulse waveform that controls the quantum dot qubit energy level and cross-coupling toward the battery temperature sensing NV quantum sensor unit through a first multi-channel pulse waveform generation control unit, and A method for controlling the temperature and pressure of an internal space of a lithium-ion battery, comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, wherein a microwave signal is sent from a first microwave signal generation unit toward a battery temperature sensing NV quantum sensor unit to control the spin switching of a quantum dot qubit of a diamond-based NV center, and wherein the spin change of the quantum dot generated during a temperature change of the lithium-ion battery is sensed as a photon or fluorescence signal related to the temperature of the internal space of the battery.

15. In Paragraph 13, the above step A step of detecting spin changes of quantum dots generated during temperature changes of a lithium-ion battery as photon or fluorescence signals related to the temperature of the internal space of the battery through a battery temperature sensing NV quantum sensor unit, via an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of a diamond, and In the first quartz base plate portion, a step of generating an electrical signal when pressure is received from the battery surface, and maintaining a constant frequency during external temperature changes or mechanical changes, and In the first half ball lens, the step of collecting photon or fluorescence signals regarding the battery internal space temperature sensed by the firsta quantum dot qubit and the firstb quantum dot qubit of the battery temperature sensing NV quantum sensor part and transmitting them toward the first reflector part, and A step of reflecting the photon or fluorescence signal generated from the battery temperature sensing NV quantum sensor unit and the photon or fluorescence signal reflected from the first half ball lens back toward the first optical filter unit through the first reflector unit, and A step of collecting photon or fluorescence signals transmitted from a first elliptical mirror through a first optical filter unit, optically filtering them, and then transmitting them toward a first lock-in camera unit; A hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control method comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, characterized by the step of locking in a photon or fluorescence signal transmitted from a first optical filter unit through a first lock-in camera unit at each pixel, and then forming image spatial information regarding the battery internal space temperature based on the locked-in measured image.

16. In Paragraph 13, the above step A step of controlling, in the second green laser generation control unit, to generate a 532nm green laser to stimulate the diamond-based NV center of the battery pressure sensing NV quantum sensor unit, so that the diamond-based NV center transitions to a high energy state to generate a photon or fluorescence signal regarding the battery internal space pressure detectable by the second lock-in camera unit, and to control the electronic spin state to be initialized; A step of controlling a quantum dot qubit, which is a component of the battery pressure sensing NV quantum sensor unit, by generating a quantum dot qubit control signal with a frequency range within DC to 20 GHz with a spurious 2 GHz modulation bandwidth toward the battery pressure sensing NV quantum sensor unit through a second quantum dot qubit control signal generation unit, and A step of generating and outputting a pulse waveform that controls the quantum dot qubit energy level and cross-coupling toward the battery pressure sensing NV quantum sensor unit through a second multi-channel pulse waveform generation control unit, and A method for controlling the temperature and pressure of an internal space of a lithium-ion battery, comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, wherein a microwave signal is sent from a second microwave signal generation unit toward a battery pressure sensing NV quantum sensor unit to control the spin switching of a quantum dot qubit of a diamond-based NV center, and wherein the spin change of the quantum dot generated during a pressure change of the lithium-ion battery is sensed as a photon or fluorescence signal related to the pressure of the internal space of the battery.

17. In Paragraph 13, the above step A step of controlling the extraction of temperature and pressure data of the current battery internal space in real time through a temperature and pressure data extraction control unit, based on the peak position shift and spectrum change of the spectrum detected by the ODMR spectrum peak position change detection control unit, and A step of controlling the machine learning analysis and control unit to predict the possibility of thermal runaway by learning the battery's operating pattern through a machine learning algorithm by comparing and analyzing current battery internal space temperature and pressure data with past battery internal space temperature data and past battery internal space pressure data, and In the threshold analysis control unit, when the current temperature and pressure data of the battery internal space deviate from the normal range or rapid fluctuation occurs, a step of analyzing and controlling a danger signal by comparing with a threshold value; A method for sensing and controlling the temperature and pressure of an internal space of a hybrid NV quantum sensor type lithium-ion battery, comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, characterized by the step of outputting a control signal to immediately control the battery state toward an electric vehicle battery short circuit control unit, a low voltage protection circuit control unit, a power switching control unit, and a battery surface air cooling / heating module driving control unit when a danger signal, which is a change exceeding a threshold value, is detected through a threshold value analysis control unit in a control signal output unit.

18. A battery temperature sensing NV quantum sensor module that detects changes in the internal temperature of a battery as an optical signal using a quantum state change and forms image spatial information regarding the temperature of the internal space of the battery based thereon; A battery pressure sensing NV quantum sensor module that detects changes in internal battery pressure as optical signals using changes in quantum states and forms image spatial information regarding strain caused by internal battery pressure based thereon; A battery surface air cooling / heating module that performs thermal management by supplying air to the battery surface according to a control signal of an intelligent battery control module to cool or heat; A hybrid NV quantum sensor type lithium-ion battery internal space temperature and pressure sensing control device comprising a battery temperature sensing NV quantum sensor and a battery pressure sensing NV quantum sensor, characterized by being composed of an intelligent battery control module that monitors physical quantities including the temperature and pressure of the battery in real time based on battery internal space data transmitted from a battery temperature sensing NV quantum sensor module and a battery pressure sensing NV quantum sensor module, and performs battery protection, power control, and thermal management functions accordingly.

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