Chemical vapor deposition apparatus

Abstract

The present invention relates to a chemical vapor deposition apparatus and, more specifically, to a chemical vapor deposition apparatus that, when depositing a silicon carbide (SiC) film or the like on a substrate, supplies process gas in a direction parallel to the substrate, thereby reducing process deviations even when the process for a substrate is repeated.

Description

Chemical Vapor Deposition System

[0001] The present invention relates to a chemical vapor deposition apparatus, and more specifically, to a chemical vapor deposition apparatus that can reduce process errors even when the process on the substrate is repeated, by supplying a process gas parallel to the substrate when depositing a silicon carbide (SiC) film or the like on a substrate.

[0002] Recently, the demand for SiC power devices has surged, and the related market is expected to continue growing. These SiC power devices can be fabricated by placing a substrate in a reaction chamber and growing a silicon carbide (SiC) single crystal on a substrate mounted on a susceptor through thermal decomposition by supplying a mixture of process gas and carrier gas into the chamber.

[0003] In this case, the substrate is placed on the satellite and positioned on the susceptor, and the satellite rotates so that the process on the substrate can proceed.

[0004] FIG. 6 is a side view illustrating a satellite and a substrate in a device according to the prior art.

[0005] Looking at Fig. 6, if the susceptor is not level, the horizontal alignment of the satellite and the substrate mounted on the upper surface of the susceptor will not be aligned. In this case, since the satellite rotates on the upper surface of the susceptor, if the satellite fails to maintain a level position, the flow of process gas supplied toward the substrate will change as the satellite rotates. Therefore, even if the process conditions for the substrate are constant, different results may be obtained when the process on the substrate is repeated.

[0006] The present invention aims to provide a chemical vapor deposition device capable of reducing process errors even when the process on the substrate is repeated, by adjusting the height of the susceptor on which the substrate is placed to maintain the horizontal position of the susceptor, in order to solve the above-mentioned problems.

[0007] The objective of the present invention as described above can be achieved by a chemical vapor deposition apparatus characterized by comprising: a chamber; an inner chamber provided inside the chamber; a susceptor provided inside the inner chamber on which a substrate is placed and which heats the substrate; an upper plate provided inside the inner chamber and above the susceptor, which provides a processing space between the susceptor and the upper plate for processing the substrate; a plurality of support bars that support the susceptor with respect to the chamber and are movable up and down; and a control unit capable of adjusting the horizontal level of the susceptor by moving the support bars up and down.

[0008] Here, the upper part of the support bar is connected to the susceptor, and the lower part of the support bar can be connected to the groove of the base of the chamber so as to be movable up and down.

[0009] In addition, the adjustment unit may be connected to the lower part of the support bar and may be equipped with a height adjustment bolt that is fastened to the groove and can move up and down, and a height maintaining bolt that maintains the height of the height adjustment bolt.

[0010] Meanwhile, the lower end of the support bar protrudes outside the chamber, and the adjustment unit may be equipped with a lifting / lowering plate connected to the lower end of the support bar outside the chamber to move the support bar up and down, a driving source to move the lifting / lowering plate up and down, and a bellows connecting the outer side of the base of the chamber and the lifting / lowering plate.

[0011] According to the present invention having the above-described configuration, by adjusting the height of the susceptor on which the substrate is placed to maintain the horizontal position of the susceptor, the process gas supplied toward the substrate is supplied parallel to the substrate, thereby reducing process error when the process on the substrate is repeated.

[0012] FIG. 1 is a side cross-sectional view illustrating the internal configuration of a chemical vapor deposition apparatus according to one embodiment of the present invention,

[0013] FIG. 2 is a perspective view illustrating a susceptor assembly inside an inner chamber.

[0014] FIG. 3 is a side cross-sectional view illustrating a first adjustment unit located at the lower end of the first support bar.

[0015] FIG. 4 is a perspective view illustrating the connection structure between the upper part of the second support bar and the susceptor.

[0016] FIG. 5 is a side cross-sectional view illustrating a control unit according to another embodiment,

[0017] FIG. 6 is a side view illustrating a satellite and a substrate that are not level in a device according to the prior art.

[0018] Hereinafter, the structure of a chemical vapor deposition apparatus according to an embodiment of the present invention will be examined in detail with reference to the drawings.

[0019] FIG. 1 is a side cross-sectional view illustrating the internal configuration of a chemical vapor deposition apparatus (1000) according to one embodiment of the present invention, and FIG. 2 is a perspective view illustrating the susceptor assembly (330).

[0020] Referring to FIGS. 1 and 2, the chemical vapor deposition apparatus (1000) may be equipped with a chamber (100). Various components may be provided in the chamber (100).

[0021] A receiving space (110) is provided on the inside of the chamber (100), and an inner chamber (300) may be provided in the receiving space (110).

[0022] A gas supply unit (200) may be connected to one side of the chamber (100). The gas supply unit (200) may serve to supply various process gases and purge gases toward the processing space (312).

[0023] The above gas supply unit (200) may be provided with a gas inlet pipe (220) that extends from the outside of the chamber (100) to the inside of the chamber (100) and is connected to the processing space (312). A supply port (210) for supplying gas may be formed in the gas inlet pipe (220) located outside the chamber (100).

[0024] Meanwhile, an inner chamber (300) may be provided inside the chamber (100), and a processing space (312) for the substrate (W) may be provided inside the inner chamber (300). By adopting a so-called double chamber structure in this way, the possibility of particle contamination on the substrate (W) can be reduced, and the process on the substrate (W) can be carried out more smoothly.

[0025] One side of the inner chamber (300) is connected to the gas inlet pipe (220), so that process gas, etc. can be supplied through the gas inlet pipe (350).

[0026] Additionally, the inner chamber (300) can serve as a thermal insulation member. That is, the inner chamber (300) is positioned to surround the susceptor assembly (330) described later and may be composed of carbon felt or graphite felt, etc. Alternatively, the inner chamber (300) may be composed of graphite-coated carbon felt or carbon-coated graphite felt, etc.

[0027] In this way, when the inner chamber (300) or the heat-blocking member is provided, the heat generated by the heater (340) of the susceptor assembly (330) is not radiated to the outside of the inner chamber (300), thereby allowing the processing space (312) to be heated more effectively.

[0028] Specifically, a satellite (326) on which the substrate (W) is placed is placed inside the inner chamber (300), and a susceptor assembly (330) for heating the substrate (W) and an upper plate (310) provided on the upper part of the susceptor assembly (330) inside the inner chamber (300) and providing a processing space between the susceptor assembly (330) and the upper plate (310) for processing the substrate (W) may be provided.

[0029] Additionally, the susceptor assembly (330) may be provided with a susceptor (320) on which a satellite (326) on which the substrate (W) is placed is placed, and a heater (340) for heating the susceptor (320). A cover (350) surrounding the satellite (326) may be provided on the upper surface of the susceptor (320). Additionally, although not shown in the drawing, a configuration is also possible in which a concave portion is formed on the upper surface of the susceptor (320) and the satellite (326) is inserted into the concave portion.

[0030] Additionally, the substrate (W) may be seated on the satellite ((326) while seated on a ring member (not shown).

[0031] The chemical vapor deposition apparatus (1000) according to the present invention may be an apparatus for depositing a silicon carbide (SiC) film on the surface of the substrate (W), and may grow a single crystal of silicon carbide (SiC) on the upper surface of the substrate (W) by supplying process gas, etc. from the side of the processing space (312) by the gas supply unit (200) to induce a laminar flow of gas inside the processing space (312).

[0032] Meanwhile, as described above, when a silicon carbide (SiC) film is deposited on the upper surface of the substrate (W), the process temperature may correspond to a high temperature of approximately 1600 degrees or higher. Accordingly, the upper plate (310), susceptor (320), and cover (350) constituting the processing space (312) can use a material such as graphite, silicon carbide coated graphite (SiC Coated Graphite), TaC coated graphite (Tac Coated Graphite), or a silicon carbide material produced by CVD sintering, thereby increasing thermal stability and thermal conductivity, allowing the substrate to be heated efficiently and power consumption to be reduced.

[0033] The processing space (312) can be provided between the aforementioned upper plate (310) and the susceptor (320).

[0034] In addition, a satellite (326) on which the substrate (W) is placed can be placed on the upper surface of the susceptor (320).

[0035] Meanwhile, when the satellite (326) is seated on the upper surface of the susceptor (320), the satellite (326) may be rotatably provided with respect to the susceptor (320).

[0036] That is, a gas passage (not shown) may be further provided that penetrates the susceptor (320) and connects to the upper surface of the susceptor (320) adjacent to the lower surface of the satellite (326). Floating gas, etc., can be supplied toward the lower surface of the satellite (326) through the gas passage to rotate the satellite (326).

[0037] During the process on the substrate (W), the substrate (W) can be rotated so that the process gas supplied from the side reacts uniformly on the entire surface of the substrate (W).

[0038] Meanwhile, a gas exhaust pipe (400) for exhausting gas from the processing space (312) may be connected to the other side of the inner chamber (300). The gas exhaust pipe (400) may extend to the outside of the chamber (100) to exhaust gas from the processing space (312) to the outside of the chamber (100).

[0039] Additionally, the inner chamber (300) may be equipped with a heater (340) for heating the substrate (W) and the processing space (312) to a process temperature. The heater (340) may be provided at the bottom of the susceptor (320) and may be composed of an induction heating coil.

[0040] If the heater (340) is configured as an induction heating coil, it can be used semi-permanently after installation, thus having advantages in terms of maintenance and equipment operation costs.

[0041] Meanwhile, as described above, when manufacturing the chemical vapor deposition apparatus (1000) according to the present invention, it is important to keep the satellite (326), more specifically the substrate (W), horizontal in parallel with the flow of process gas supplied from the gas inlet pipe (220). Since the satellite (326) rotates on the upper surface of the susceptor (320), if the satellite (326) is not kept horizontal, different results may be obtained for the process on the substrate (W) even if the process conditions are constant.

[0042] In order to solve the aforementioned problems, the present invention may be provided with a plurality of support bars (512, 514, 516, 518) that support the susceptor (320) with respect to the chamber (100) and are movable up and down, and an adjustment unit (500A, 500B, 500C, 500D) that can adjust the horizontal level of the susceptor (320) by moving the support bars (512, 514, 516, 518) up and down.

[0043] Here, the adjustment units (500A, 500B, 500C, 500D) may be provided on all of the plurality of support bars (512, 514, 516, 518) or on some of the plurality of support bars (512, 514, 516, 518). However, in order to adjust the horizontal level of the susceptor (320), the adjustment units (500A, 500B, 500C, 500D) may be provided on multiple of the plurality of support bars (512, 514, 516, 518).

[0044] The above support bars (512, 514, 516, 518) may be composed of multiple units to support the susceptor (320). For example, the support bars (512, 514, 516, 518) may be arranged adjacent to the area where the gas inlet pipe (220) of the susceptor (320) is connected and the area where the gas exhaust pipe (400) is connected. Additionally, although not shown in the drawing, a support bar supporting the central part of the susceptor (320) may be provided.

[0045] The upper part of the support bar (512, 514, 516, 518) is connected to the lower part of the susceptor (320), and the lower part of the support bar (512, 514, 516, 518) can be connected to the groove (103) of the base (102) of the chamber (100) so as to be movable up and down.

[0046] FIG. 3 is a side cross-sectional view showing a first adjustment unit (500A) located at the lower end of the first support bar (512).

[0047] Referring to FIG. 3, the first adjustment unit (500A) is connected to the lower end of the first support bar (512) and may be equipped with a height adjustment bolt (502A) that is fastened to the groove (103) and can move up and down, and a height maintaining bolt (504A) that maintains the height of the height adjustment bolt (502A).

[0048] The height adjustment bolt (502A) has an insertion groove (503A) formed therein, and the lower end of the first support bar (512) can be inserted into the insertion groove (503A) and connected.

[0049] Additionally, the height adjustment bolt (502A) can be fastened to the groove (103) to allow for height adjustment. For example, the height adjustment bolt (502A) can be fastened to the groove (103) by means of screw threads or the like. Therefore, by rotating the height adjustment bolt (502A) in one direction or the other, the first support bar (512) can be raised or lowered. When the first support bar (512) is raised or lowered, the height of the susceptor (320) supported by the first support bar (512) can be adjusted to control the horizontal level.

[0050] Meanwhile, when the height of the first support bar (512) is adjusted by the height adjustment bolt (502A), the height maintaining bolt (504A) may be provided to maintain the adjusted height of the first support bar (512).

[0051] The height maintaining bolt (504A) can be fastened to the outer circumference of the height adjusting bolt (502A) through threads, etc.

[0052] As described above, after adjusting the height of the first support bar (512) by the height adjustment bolt (502A), the height maintaining bolt (504A) can be rotated so that the lower end of the height maintaining bolt (504A) touches the base (102) of the chamber (100), thereby maintaining the height of the first support bar (512).

[0053] In this case, a washer (506A), etc., can be provided between the height-maintaining bolt (504A) and the base (102) to prevent damage to the base (102).

[0054] Meanwhile, the configuration of the other control units (500B, 500C, 500D) is similar to the configuration of the first control unit (500A) described above, so a repetitive explanation is omitted.

[0055] Ultimately, by providing the plurality of support bars (512, 514, 516, 518) and adjustment units (500A, 500B, 500C, 500D), the horizontal level of the susceptor (320) can be adjusted by individually raising and lowering the plurality of support bars (512, 514, 516, 518).

[0056] FIG. 4 is an enlarged view of area 'A' of FIG. 2, and is a perspective view illustrating the connection structure between the upper part of the second support bar (514) and the susceptor (320).

[0057] Referring to FIG. 4, the upper portion of the second support bar (514) can support the lower surface of the susceptor (320).

[0058] For example, a positioning pin (515) may be provided at the upper end of the second support bar (514), and the positioning pin (515) may be inserted into the positioning hole (321) of the susceptor (320). The positioning pin (515) can be inserted into the positioning hole (321) to determine the position of the second support bar (514). The positioning pin (515) may also be integrally formed at the upper end of the second support bar (514).

[0059] The connection structure between the upper part of the other support bars (512, 516, 518) other than the second support bar (514) and the susceptor (320) is similar to the description above, so a repetitive description is omitted.

[0060] Meanwhile, FIG. 5 is a side cross-sectional view illustrating a first control unit (1500A) according to another embodiment.

[0061] Referring to FIG. 5, the lower end of the first support bar (512) can pass through the through hole (104) of the base (102) of the chamber (100) and protrude outside the chamber (100).

[0062] In this case, the first adjustment unit (1500A) may be equipped with a lifting plate (710) connected to the lower end of the first support bar (512) outside the chamber (100), a driving source (720) that moves the lifting plate (710) up and down, and a bellows (600) that extends and contracts by connecting the outer side of the base (102) of the chamber (100) to the lifting plate (710).

[0063] The lifting / lowering plate (710) can be raised or lowered by the operation of the above driving source (720), and the first support bar (512) can be moved up and down in conjunction with the lifting / lowering plate (710).

[0064] Meanwhile, in order to maintain the internal pressure of the chamber (100), a bellows (600) connecting the base (102) of the chamber (100) and the lifting / lowering plate (710) may be provided. The upper end of the bellows (600) may be connected to the outer lower surface of the base (102), and the lower end of the bellows (600) may be connected to the lifting / lowering plate (710).

[0065] When the above-mentioned lifting plate (710) moves up and down, the bellows (600) can extend and contract to maintain the internal pressure of the chamber (100).

[0066] Meanwhile, regarding the process of assembling the susceptor assembly (330), the horizontal level of the susceptor (320) can be adjusted using the adjustment units (500A, 500B, 500C, 500D). For example, the height of the first support bar (512) can be adjusted using the height adjustment bolt (502A), and the height maintenance bolt (504A) can be rotated to maintain the height of the first support bar (512) and adjust the horizontal level. In this way, the height of other support bars (514, 516, 518) can be adjusted if necessary.

[0067] Next, components such as the satellite (326) and the cover (350) can be assembled on the upper part of the horizontally aligned susceptor (320).

[0068] Although the present invention has been described above with reference to preferred embodiments, those skilled in the art may modify and change the present invention in various ways without departing from the spirit and scope of the invention as described in the claims below. Therefore, if a modified embodiment basically includes the components of the claims of the present invention, it should be considered to be included within the technical scope of the present invention.

[0069] According to the present invention, by adjusting the height of the susceptor on which the substrate is placed to maintain the horizontal position of the susceptor, the process gas supplied toward the substrate is supplied parallel to the substrate, thereby reducing process error when the process on the substrate is repeated.

Claims

1. Chamber; An inner chamber provided on the inner side of the above chamber; A susceptor provided on the inner side of the above inner chamber, on which the substrate is placed and which heats the substrate; An upper plate provided on the inner side of the inner chamber and on the upper side of the susceptor, providing a processing space between the susceptor and the upper plate for processing the substrate; A plurality of support bars that support the susceptor with respect to the chamber and are configured to be movable up and down; and A chemical vapor deposition apparatus characterized by having an adjustment unit capable of adjusting the horizontal level of the susceptor by moving the support bar up and down.

2. In Paragraph 1, A chemical vapor deposition apparatus characterized in that the upper portion of the support bar is connected to the susceptor, and the lower portion of the support bar is connected to the groove of the base of the chamber so as to be movable up and down.

3. In Paragraph 2, The above control unit is A chemical vapor deposition apparatus characterized by having a height adjustment bolt connected to the lower end of the support bar and fastened to the groove to move up and down, and a height maintaining bolt that maintains the height of the height adjustment bolt.

4. In Paragraph 1, The lower end of the support bar protrudes outside the chamber, and A chemical vapor deposition apparatus characterized by the above-described control unit comprising a lifting / lowering plate connected to the lower end of the support bar outside the chamber to move the support bar up and down, a driving source to move the lifting / lowering plate up and down, and a bellows connecting the outer side of the base of the chamber and the lifting / lowering plate.

Images