Radio frequency switch and electronic device

Abstract

The present disclosure belongs to the technical field of radio frequency. Provided are a radio frequency switch and an electronic device, which at least partially solve the problems of the parasitic capacitance of existing radio frequency switches being relatively large and the isolation thereof being low. The radio frequency switch in the present disclosure comprises a substrate, and a semiconductor layer, a first interlayer insulating layer and a connection electrode layer, which are stacked on the substrate in sequence, wherein the semiconductor layer comprises a plurality of N-type semiconductors and a plurality of P-type semiconductors, which are alternately arranged, and an intrinsic semiconductor sandwiched between each N-type semiconductor and each P-type semiconductor; and the connection electrode layer comprises a first connection electrode and a second connection electrode, the first connection electrode comprises a plurality of first branches, the second connection electrode comprises a plurality of second branches, the orthographic projection of one N-type semiconductor on the substrate at least partially overlaps with that of one first branch, the orthographic projection of one P-type semiconductor on the substrate at least partially overlaps with that of one second branch, and at least some of the first branches extend in different directions.

Description

A radio frequency switch and electronic device Technical Field

[0001] This disclosure belongs to the field of radio frequency technology, specifically relating to a radio frequency switch and electronic device. Background Technology

[0002] Radio frequency (RF) switches are key components commonly used in wireless communication devices and RF systems. Their main functions are to control the on / off state of RF signals, achieve power distribution, and system integration. They are widely used in array antennas.

[0003] To achieve sufficiently low on-resistance, existing RF switches typically have a large overall width, resulting in a large parasitic capacitance and thus reducing the isolation of the RF switch.

[0004] Summary of the Invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and to provide a radio frequency switch and electronic device with high isolation.

[0006] The first aspect of the present invention provides a radio frequency switch, the radio frequency switch comprising a substrate, and a semiconductor layer, a first interlayer insulating layer and a connection electrode layer sequentially stacked on the substrate;

[0007] The semiconductor layer includes a plurality of N-type semiconductors and a plurality of P-type semiconductors arranged alternately, and an intrinsic semiconductor sandwiched between the N-type semiconductors and the P-type semiconductors;

[0008] The connection electrode layer includes a first connection electrode and a second connection electrode; the first connection electrode is electrically connected to the plurality of N-type semiconductors; the second connection electrode is connected to the plurality of P-type semiconductors;

[0009] The first connection electrode includes a plurality of first branches; the second connection electrode includes a plurality of second branches; the orthographic projection of one of the N-type semiconductors onto the substrate at least partially overlaps with the orthographic projection of one of the first branches onto the substrate, and the orthographic projection of one of the P-type semiconductors onto the substrate at least partially overlaps with the orthographic projection of one of the second branches; wherein...

[0010] At least some of the first branches extend in different directions.

[0011] In one possible implementation, the radio frequency switch includes at least one first switching unit, the first connection electrode further includes a first connection portion; the second connection electrode further includes a second connection portion;

[0012] Wherein, the first connecting part includes a plurality of first sub-connecting parts, and the second connecting part includes a plurality of second sub-connecting parts; the first sub-connecting parts are connected to at least one first branch, and the second sub-connecting parts are connected to at least one second branch;

[0013] A first switching unit includes four first sub-connection portions and four second sub-connection portions, as well as a first branch connected to the four first sub-connection portions and a second branch connected to the four second sub-connection portions;

[0014] The four second sub-connecting parts in the first switching unit define four quadrants, and the second branches connected to the four second connecting parts are respectively located in the four quadrants;

[0015] The second branch includes a first end connected to the second sub-connecting portion and a second end disposed opposite to the first end and located in different quadrants. The first end of the second branch points to the second end in different directions.

[0016] In one possible implementation, the four first sub-connection portions in the first switching unit are connected.

[0017] In one possible implementation, the radio frequency switch includes at least one repeating unit, and one repeating unit includes four of the first switching units;

[0018] For the repeating unit, two first switch units arranged adjacent to each other in the row direction are symmetrically arranged with a straight line extending along the column direction as the axis of symmetry, and two first switch units arranged adjacent to each other in the column direction are symmetrically arranged with a straight line extending along the row direction as the axis of symmetry.

[0019] In one possible implementation, the radio frequency switch includes at least one first switching unit; the first connection electrode further includes a first connection portion; and the second connection electrode further includes a second connection portion.

[0020] Some of the plurality of first branches extend along the row direction and some extend along the column direction; some of the plurality of second branches extend along the row direction and some extend along the column direction.

[0021] At least one first branch extending along the row direction and at least one first branch extending along the column direction are sequentially connected to form a first branch component; each first branch component is connected to a first connecting portion; at least one second branch extending along the row direction and at least one second branch extending along the column direction are connected to form a second branch component; each second branch component is connected to a second connecting portion; the first branch components and the second branch components are alternately arranged.

[0022] In one possible implementation, the first branch component includes a first branch extending along the row direction and a first branch along the column direction; the second branch component includes a second branch extending along the row direction and a second branch along the column direction.

[0023] The first connecting part connects to a first branch extending along the column direction, and the second connecting part connects to a second branch extending along the row direction.

[0024] In one possible implementation, the first branch component includes a first branch extending along the row direction and two first branches along the column direction, the two first branches along the column direction being respectively connected to a first end and a second end of the first branch extending along the row direction.

[0025] The second branch component includes a second branch extending along the row direction and two second branches along the column direction, the two second branches along the column direction being respectively connected to a third end and a fourth end of the second branch extending along the row direction;

[0026] The first branch extending along the row direction is connected to the first end of the first branch extending along the column direction, and the second branch extending along the column direction is connected to the second connecting portion.

[0027] In one possible implementation, the radio frequency switch includes at least one repeating unit, and one repeating unit includes four of the first switching units;

[0028] For the repeating unit, two first switch units that are adjacent in the row direction are symmetrically arranged with a straight line extending along the column direction as the axis of symmetry, and two first switch units that are adjacent in the column direction are symmetrically arranged with a straight line extending along the row direction as the axis of symmetry.

[0029] Alternatively, for the repeating unit, two adjacent first switching units are rotationally symmetrical about the intersection point of the first branch components of the four first switching units.

[0030] In one possible implementation, the first branch components of the four first switching units in the repeating unit, which are arranged adjacent to each other, are connected into a single structure.

[0031] In one possible implementation, the radio frequency switch further includes a first lead-out portion and a second lead-out portion; the first lead-out portion and the second lead-out portion are respectively located at both ends of the radio frequency switch, and the first lead-out portion is connected to the first connection electrode, and the second lead-out portion is connected to the second connection electrode.

[0032] In one possible implementation, the plurality of first branches are divided into a plurality of first branch groups, the first branch group including a plurality of first branches interconnected with each other; the first connecting electrode further includes a first connecting portion; the second connecting electrode further includes a second connecting portion.

[0033] Each of the first branch groups is spaced apart and connected to the first connecting part; each of the second branch groups is spaced apart and connected to the second connecting part.

[0034] In one possible implementation, the orthographic projection of the first branch group onto the substrate is a first pattern; the first pattern includes a first side and a second side disposed opposite to each other along the extending direction of the first connecting portion; the first side forms a first concave pattern, and the second side forms a first convex pattern; and the first concave pattern is adapted to the first convex pattern.

[0035] In one possible implementation, the first protruding graphic includes a first portion and a second portion that are intersected.

[0036] In one possible implementation, the plurality of first branches are interconnected, and the plurality of second branches are interconnected;

[0037] The intrinsic semiconductor's orthogonal projection onto the substrate is a Hilbert curve.

[0038] In one possible implementation, the plurality of first branches are interconnected, and the plurality of second branches are interconnected;

[0039] The intrinsic semiconductor's orthogonal projection onto the substrate is a Peano curve.

[0040] A second aspect of the present invention provides an electrode device, the electronic device comprising the radio frequency switch provided in the first aspect of the present invention. Beneficial effects

[0041] The radio frequency switch provided in this disclosure, by patterning the connection electrode layer and setting the extension directions of some of the first branches in the first connection electrode of the connection electrode layer to be different, reduces the number of pairs of non-adjacent parallel electrodes in the connection electrode layer, increases the distance between non-adjacent parallel electrodes, thereby reducing the parasitic capacitance between the first connection electrode and the second connection electrode, improving the isolation of the radio frequency switch, and reducing the insertion loss of the radio frequency switch. Alternatively, by increasing the length of the intrinsic semiconductor, the width of the effective device of the switching diode is increased, the resistance per unit width of the switching diode is reduced, the off-state parasitic capacitance of the switching diode is reduced, and thus the insertion loss of the radio frequency switch is reduced, improving the isolation of the radio frequency switch and enhancing the performance of the radio frequency switch. Attached Figure Description

[0042] Figure 1 is a cross-sectional view of an exemplary PIN diode.

[0043] Figure 2 is a schematic diagram of an exemplary planar electrode layer.

[0044] Figure 3 is a cross-sectional view of a radio frequency switch provided in an embodiment of this disclosure.

[0045] Figure 4 is a schematic diagram of the structure of a first switching unit provided in the first example of this disclosure.

[0046] Figure 5 is a schematic diagram of the semiconductor layer structure of a radio frequency switch provided in the first example of this disclosure.

[0047] Figure 6 is a schematic diagram of the structure of a first switching unit provided in an embodiment of this disclosure.

[0048] Figure 7 is a schematic diagram of the structure of a first switching unit provided in an embodiment of this disclosure.

[0049] Figure 8 is a schematic diagram of the structure of a repeating unit provided in the second example of this disclosure.

[0050] Figure 9 is a schematic diagram of the structure of a radio frequency switch provided in the second example of this disclosure.

[0051] Figure 10 is a structural schematic diagram of a first switching unit provided in the third example of this disclosure.

[0052] Figure 11 is a structural schematic diagram of a first switching unit provided in the third example of this disclosure.

[0053] Figure 12 is a schematic diagram of the structure of a repeating unit provided in the fourth example of this disclosure.

[0054] Figure 13 is a schematic diagram of the structure of a repeating unit provided in the fourth example of this disclosure.

[0055] Figure 14 is a schematic diagram of the structure of a radio frequency switch provided in the fourth example of this disclosure.

[0056] Figure 15 is a schematic diagram of the structure of a radio frequency switch provided in the fourth example of this disclosure.

[0057] Figure 16 is a schematic diagram of the structure of a radio frequency switch provided in the fifth example of this disclosure.

[0058] Figure 17 is a schematic diagram of the structure of a first connecting electrode provided in the fifth example of this disclosure.

[0059] Figure 18 is a schematic diagram of the structure of a second connecting electrode provided in the fifth example of this disclosure.

[0060] Figure 19 is a schematic diagram of the structure of a radio frequency switch provided in the sixth example of this disclosure.

[0061] Figure 20 is a schematic diagram of the structure of a radio frequency switch provided in the sixth example of this disclosure.

[0062] Figure 21 is a schematic diagram of the structure of a radio frequency switch provided in the sixth example of this disclosure.

[0063] Figure 22 is a schematic diagram of the structure of a radio frequency switch provided in the sixth example of this disclosure.

[0064] Figure 23 is a schematic diagram of the structure of an electronic device provided in an embodiment of this disclosure. Detailed Implementation

[0065] To enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0066] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0067] In the description of this application, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more features. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0068] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication between two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0069] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0070] The following disclosure provides many different embodiments or examples for implementing different structures of this application. To simplify the disclosure, specific examples of components and arrangements are described below. Of course, these are merely examples and are not intended to limit the scope of this application. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, various specific examples of processes and materials are provided in this application, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0071] In 5G wireless infrastructure and massive MIMO (Multiple-Input Multiple-Output) projects, hybrid beamforming architectures are favored for their flexibility and efficiency. In this architecture, RF switches, as key components, not only help save valuable board space but also optimize system thermal management and reduce power consumption. 5G wireless infrastructure operating in sub-6GHz bands allows network providers to quickly and easily increase bandwidth and data throughput; however, its design complexity is high, requiring extensive use of RF switches. While it can rapidly increase bandwidth and data throughput, it also presents greater design challenges, particularly placing higher demands on the number and performance of RF switches.

[0072] Currently, in 5G application scenarios with frequencies below 6GHz, RF switches mainly use wafer-level semiconductor processes such as silicon-based SOI (Silicon On Insulator) and III-V group semiconductors. Due to their complex manufacturing process, high cost, and the need for integration based on SMT (Surface Mount Technology), high-precision simulation consistency cannot be achieved.

[0073] In response, this disclosure proposes a glass-based active radio frequency switching device that can form a large-scale phase-shifting network and is highly integrated with a glass-based array antenna, making it compatible with the whole device.

[0074] Currently, glass-based RF switches mainly use interdigitated PIN diodes. As shown in Figure 1, an interdigitated PIN diode includes an active layer 30, an insulating layer 20, and a planar electrode 10 stacked sequentially. The active layer 30 includes multiple alternating P-type semiconductors 301, N-type semiconductors 303, and an intrinsic semiconductor 302 disposed between them. As shown in Figure 2, the planar electrode 10 includes multiple interdigitated electrodes connected in parallel. Each interdigitated electrode includes a first electrode 11 and a second electrode 12 arranged in an interdigitated manner. The first electrode 11 includes multiple first branches 110, and the second electrode 12 includes multiple second branches 120. The first branches 110 and the second branches 120 are alternately arranged. A portion of each first branch 110 extends to the insulating layer 20 and connects to its corresponding P-type semiconductor 301, and a portion of each second branch 120 extends to the insulating layer 20 and connects to its corresponding N-type semiconductor 303.

[0075] While using interdigitated PIN diodes can increase the effective area and reduce physical footprint, the parallel nature and small spacing between the first and second branches result in a large electric field strength between them, significantly increasing the parasitic capacitance between the first and second electrodes. Furthermore, connecting multiple PIN diodes in parallel inevitably increases the effective width of the device and the off-state parasitic capacitance of the PIN diodes, thereby reducing the isolation of the RF switch and increasing its insertion loss.

[0076] In the principle of PIN RF switches, the on-state resistance Ron and off-state parasitic capacitance Coff of the PIN diode are the core parameters that determine the performance of the RF switch. Ideally, the device should have a low Ron*Coff value so that the RF switch has high isolation and low insertion loss. The embodiments of this disclosure reduce the Ron*Coff value by changing the electrode arrangement.

[0077] It should be noted that the off-state parasitic capacitance of a PIN diode per unit width in an RF switch represents the ratio of the off-state parasitic capacitance of the PIN diode to its total width.

[0078] Parasitic capacitance components exist between any two first branches 110 and second branches 120 of the aforementioned planar electrode layer 10. Specifically, the first branches 111 and second branches 121 are adjacent parallel electrodes. Similarly, combinations such as the first branch 112 and second branch 122, the second branch 121 and first branch 112, the first branch 113 and second branch 123, the first branch 114 and second branch 124, and the second branch 124 and first branch 115 are all adjacent parallel electrode groups. The first branches 111 and second branches 122 are non-adjacent parallel electrodes. Similarly, combinations such as the first branch 111 and second branch 123, and the first branch 111 and second branch 124 are all non-adjacent parallel electrode groups.

[0079] The magnitude of the parasitic capacitance is related to the positional relationship between the first branch and the second branch. The larger the distance between the first branch and the second branch, the weaker the electric field strength and the smaller the parasitic capacitance between the branches. The smaller the angle between the extension directions of the first branch and the second branch, the larger the parasitic capacitance. Therefore, the parasitic capacitance between adjacent parallel electrodes is much larger than that between non-adjacent parallel electrodes. However, due to the resistive characteristics of the active layer, the gap width between the P-type and N-type semiconductors is fixed, and the spacing between adjacent branch electrodes in the planar electrodes corresponding to the P-type and N-type semiconductors is also fixed. Therefore, it is impossible to reduce the capacitance by increasing the spacing between adjacent parallel electrodes. With a fixed electrode spacing, the inventors proposed to pattern the planar electrodes to change the electrode orientation, thereby reducing the number of pairs of non-adjacent parallel electrodes and increasing the spacing between them. This would reduce the off-state parasitic capacitance of the planar electrodes, thereby improving the isolation of the RF switch and reducing its insertion loss. Alternatively, by patterning the planar electrodes, the length of the intrinsic region could be increased, increasing the effective width of the RF switch and reducing the on-state resistance of the switching diode per unit width. This would effectively reduce the off-state parasitic capacitance of the switching diode, thereby improving the isolation of the RF switch and reducing its insertion loss.

[0080] Based on the above considerations, the first embodiment of the present invention proposes a radio frequency switch, which includes at least one switching diode. As shown in FIG3, which is a cross-sectional view of a switching diode, it includes a substrate 40, and a semiconductor layer 50, a first interlayer insulating layer 60 and a connecting electrode layer 70 sequentially stacked on the substrate 40.

[0081] The semiconductor layer 50 includes a plurality of N-type semiconductors 501 and a plurality of P-type semiconductors 503 arranged alternately, and an intrinsic semiconductor 502 sandwiched between the N-type semiconductors 501 and the P-type semiconductors 503.

[0082] The connecting electrode layer 70 includes a first connecting electrode 71 and a second connecting electrode 72 arranged with interdigitated fingers. The first connecting electrode 71 includes a plurality of first branches, and the second connecting electrode 72 includes a plurality of second branches.

[0083] At least some of the first branches extend in different directions, and correspondingly, due to the interdigitated arrangement of the first connecting electrode 71 and the second connecting electrode 72, at least some of the second branches also extend in different directions.

[0084] The first connecting electrode 71 is electrically connected to a plurality of N-type semiconductors 501, and the second connecting electrode 72 is electrically connected to a plurality of P-type semiconductors 503.

[0085] By applying voltage signals to the first connecting electrode 71 and the second connecting electrode 72, an electric field is generated, causing charge carriers to move between the N-type semiconductor and the P-type semiconductor, thereby controlling the on and off states of the radio frequency switch.

[0086] This embodiment of the present disclosure reduces the number of non-adjacent parallel electrode pairs in the connection electrode layer by patterning the connection electrode layer and setting different extension directions for some of the first branches in the first connection electrode of the connection electrode layer. Similarly, at least some of the second branches in the second connection electrode also have different extension directions. This reduces the off-state parasitic capacitance of the switching diode. Alternatively, by setting different extension directions for some of the first branches in the first connection electrode of the connection electrode layer, the length of the intrinsic semiconductor layer is increased, thereby increasing the effective device width of the switching diode, reducing the resistance per unit width of the switching diode, and effectively reducing the off-state parasitic capacitance of the switching diode. This enhances the isolation of the RF switch, reduces the insertion loss of the RF switch, and improves the performance of the RF switch.

[0087] This embodiment does not specifically limit the connection relationship between the connecting electrode and the semiconductor layer. One of the first connecting electrode 71 and the second connecting electrode 72 can be electrically connected to multiple N-type semiconductors, and the other of the first connecting electrode 71 and the second connecting electrode 72 can be electrically connected to multiple P-type semiconductors.

[0088] In some examples, as shown in Figure 4, a portion of the first branch 712 extends along the row direction X, and the remaining portion of the first branch 712 extends along the column direction Y. Similarly, a portion of the second branch 722 extends along the row direction X, and a portion of the second branch 722 extends along the column direction. One first branch 712 serves as an interdigitated electrode of the first connecting electrode 71, and one second branch 722 serves as an interdigitated electrode of the second connecting electrode 72.

[0089] This example reduces the number of pairs of non-adjacent parallel electrodes in the connecting electrode layer by setting at least some of the first branches to have different extension directions, thereby increasing the distance between non-adjacent parallel electrodes, which in turn reduces the off-state parasitic capacitance between the first connecting electrode and the second connecting electrode, improves the isolation of the RF switch, and reduces the insertion loss of the RF switch.

[0090] In some examples, multiple first branch connections constitute a first branch group, multiple second branch connections constitute a second branch group, a first branch group serves as an interdigital electrode of a first connection electrode 71, a second branch group serves as an interdigital electrode of a second connection electrode 72, and at least some of the first branches in the first branch group have different extension directions.

[0091] Specifically, part of the first branch extends along the row direction X, and the remaining part of the first branch extends along the column direction Y.

[0092] This example increases the length of the junction between two adjacent interdigitated electrodes with opposite polarities by setting at least some of the first branches in the first branch group to have different extension directions. That is, it increases the length of the junction between two adjacent first branch electrode groups and second branch electrode groups. Due to the correspondence, the length of the intrinsic semiconductor is consistent with the length of the junction, thereby increasing the effective device width of the switching diode and reducing the resistance per unit width of the device.

[0093] Furthermore, since the extension directions of the branch electrodes in each branch electrode group are at least partially different, the off-state parasitic capacitance between the first branch electrode group and the second branch electrode group in this embodiment is smaller than that between two straight interdigitated electrodes. This further reduces the off-state parasitic capacitance of the switching diode, improves the isolation of the RF switch, reduces the insertion loss of the RF switch, and enhances the performance of the RF switch.

[0094] In one specific embodiment, one interdigital electrode of the first connecting electrode 71 is electrically connected to an N-type semiconductor 501; and one interdigital electrode of the second connecting electrode 72 is electrically connected to a P-type semiconductor 503.

[0095] In one specific embodiment, the first connecting electrode 71 and the second connecting electrode 72 are metal electrodes.

[0096] Specifically, the thickness of semiconductor layer 50 is greater than or equal to 50 nanometers and less than or equal to 200 nanometers;

[0097] Among them, the P-type semiconductor 503 is a semiconductor obtained by heavy doping of P-type ions, for example, P-type semiconductor 503 is formed by doping silicon semiconductor with P-type ions such as boron at a relatively high concentration. The N-type semiconductor 501 is a semiconductor obtained by heavy doping of N-type ions, for example, N-type semiconductor is formed by doping silicon semiconductor with N-type ions such as phosphorus (P) at a relatively high concentration. The I-type semiconductor, also known as the intrinsic semiconductor, is formed by adding a lightly doped intrinsic semiconductor layer 502 between the P-type semiconductor 503 and the N-type semiconductor 501 to form a PIN structure diode. In the semiconductor layer, the P-type semiconductor 503, intrinsic semiconductor 502 and N-type semiconductor 501 are arranged in the order of PIN1-PIN1.

[0098] Specifically, the intrinsic semiconductor 502 is composed of multiple layers of low-temperature polycrystalline silicon. Low-temperature polycrystalline silicon is a semiconductor material with high mobility, which is beneficial for reducing the capacitance and on-state resistance of RF switches.

[0099] To better illustrate the specific structure of the radio frequency switch in the embodiments of this disclosure, the following description is provided in conjunction with specific examples.

[0100] First example:

[0101] The first example of this disclosure provides a radio frequency switch including at least one switching diode, and a switching diode includes at least one first switching unit.

[0102] In a specific embodiment, as shown in FIG4, a switching diode includes only one first switching unit 80. The first switching unit 80 includes four first sub-connection portions 711 and four second sub-connection portions 721, as well as a first branch 712 connected to the four first sub-connection portions 711 and a second branch 722 connected to the four second sub-connection portions 721.

[0103] The four first sub-connecting portions 711 include first sub-connecting portion 7110, first sub-connecting portion 7111, first sub-connecting portion 7112, and first sub-connecting portion 7113. The four first sub-connecting portions are interconnected to define four quadrants. The four second sub-connecting portions 721 include second sub-connecting portion 7210, second sub-connecting portion 7211, second sub-connecting portion 7212, and second sub-connecting portion 7213. The four second sub-connecting portions 721 are located in the four quadrants respectively and are disposed opposite to their corresponding first sub-connecting portions 711. The first branches 712 connected to the four first sub-connecting portions 711 are located in the four quadrants respectively and have different directions. The second branches 722 connected to the four second sub-connecting portions 721 are located in the four quadrants respectively and have different directions.

[0104] The first branch includes a first end connected to the first connecting part and a second end disposed opposite to the first end, and the direction of each first branch indicates the direction from the first end of the first branch to the second end; the second branch includes a third end connected to the second connecting part and a fourth end disposed opposite to the third end, and the direction of each second branch indicates the direction from the third end of the second branch to the fourth end.

[0105] In this embodiment, there is a first branch, namely an interdigitated electrode of the first connecting electrode 71, and a second branch, namely an interdigitated electrode of the second connecting electrode 72.

[0106] A portion of a first branch extends into the first interlayer insulating layer 60 and is electrically connected to its corresponding N-type semiconductor 501; a portion of a second branch extends into the first interlayer insulating layer 60 and is electrically connected to its corresponding P-type semiconductor 503.

[0107] In one specific embodiment, the second sub-connection portion 7210 extends and is electrically connected to the end of the second sub-connection portion 7211 that is close to it, the second sub-connection portion 7212 extends and is electrically connected to the end of the second sub-connection portion 7213 that is close to it, and the second sub-connection portion 7213 extends and is electrically connected to the end of the second sub-connection portion 7210 that is close to it.

[0108] This embodiment uses a patterned design to ensure that the four first sub-connection parts in the first switching unit are arranged on the same layer and electrically connected to each other, and the four second sub-connection parts are arranged on the same layer and electrically connected to each other. Without adding via jumper wires, the electrical connection of multiple first branches and multiple second branches in the first switching unit can be achieved without adding process steps and reducing the off-state parasitic capacitance of the first switching unit.

[0109] In one specific embodiment, the first branch 7120 connected to the first sub-connection portion 7110 is located in the first quadrant, the first branch 7121 connected to the first sub-connection portion 7111 is located in the second quadrant, the first branch 7122 connected to the first sub-connection portion 7112 is located in the third quadrant, and the first branch 7123 connected to the first sub-connection portion 7112 is located in the fourth quadrant.

[0110] The second branch 7220 connected to the second sub-connector 7210 is located in the first quadrant, the second branch 7221 connected to the second sub-connector 7211 is located in the second quadrant, the second branch 7222 connected to the second sub-connector 7212 is located in the third quadrant, and the second branch 7223 connected to the second sub-connector 7213 is located in the fourth quadrant.

[0111] A first branch includes a first end connected to a first sub-connection portion and a second end disposed opposite to the first end. The direction of each first branch indicates the direction from the first end of the first branch to the second end. In order to enrich the arrangement direction of the electrodes and reduce the number of interdigitated electrodes that are parallel to each other in the RF switch, the directions of the first branches in the four quadrants are different. Compared with the conventional interdigitated electrode arrangement, the number of non-adjacent parallel electrodes is reduced.

[0112] A second branch includes a third end connected to the second sub-connector and a fourth end disposed opposite to the third end. The direction of each second branch indicates the direction from the third end of the second branch to the fourth end. The directions of second branches located in different quadrants are different.

[0113] Specifically, taking the first branch 7122 located in the third quadrant as an example, the first branch 7122 includes a first end A connected to the first sub-connecting part 7112 and a second end B disposed opposite to the first end A. The direction from the first end A to the second end B indicates the direction of the first branch 7122. The direction of the first branch located in different quadrants is different. The first branch and the second branch are alternately disposed in each quadrant, and the direction of the first branch is opposite to the direction of the second branch.

[0114] The radio frequency switch provided in this embodiment includes at least one switching diode. Each switching diode includes at least one first switching unit. The multiple branch electrodes of the first switching unit are divided into four groups. The first branches connected to the four first sub-connection portions are located in the four quadrants and point in different directions. The second branches connected to the four second sub-connection portions are located in the four quadrants and point in different directions. This reduces the number of pairs of non-adjacent parallel electrodes, reduces the off-state parasitic capacitance between the first connection electrode and the second connection electrode, increases the isolation of the radio frequency switch, and reduces the insertion loss of the radio frequency switch.

[0115] It should be noted that the number of branch electrodes shown in the figure is for illustrative purposes only and is not intended to limit the specific number of branches.

[0116] Figure 5 shows a schematic diagram of the semiconductor layer 50 of a first switching unit shown in Figure 4. The first branch corresponds to the morphology of the N-type semiconductor 501, and the second branch corresponds to the morphology of the P-type semiconductor 503.

[0117] A portion of a first branch extends into the first interlayer insulating layer 60 and is electrically connected to a corresponding N-type semiconductor; a portion of a second branch extends into the first interlayer insulating layer 60 and is electrically connected to a corresponding P-type semiconductor.

[0118] The parasitic capacitance of the connecting electrode layer mainly consists of the parasitic capacitance between adjacent parallel electrodes and the parasitic capacitance between non-adjacent parallel electrodes. The parasitic capacitance between non-parallel electrodes and the parasitic capacitance between diagonally staggered parallel electrodes are much smaller than the parasitic capacitance between non-adjacent parallel electrodes. The parasitic capacitance between vertical electrodes and the parasitic capacitance between diagonally staggered parallel electrodes can be basically ignored. Therefore, the solution provided in this embodiment significantly reduces the off-state parasitic capacitance between the first connecting electrode and the second connecting electrode, thereby improving the isolation of the RF switch and reducing the insertion loss of the RF switch.

[0119] In one specific embodiment, as shown in FIG4, the interdigitated electrodes located in two adjacent quadrants are rotate symmetrical about the intersection point O of the four first sub-connections.

[0120] The radio frequency switch provided in this disclosure includes at least one first switching unit. The first switching unit includes four sets of interdigitated electrodes located in four quadrants. By using a grouping and non-parallel dense arrangement strategy, the extension directions of adjacent sets of interdigitated electrodes are perpendicular, reducing the number of non-adjacent parallel electrodes. The parasitic capacitance between perpendicular electrodes and the parasitic capacitance between diagonally staggered parallel electrodes can be ignored, thereby eliminating the parasitic effect between the electrodes in each group. Therefore, this disclosure significantly reduces the off-state parasitic capacitance of the switching diode, improves the isolation of the radio frequency switch, and reduces the insertion loss of the radio frequency switch.

[0121] It should be emphasized that obtaining the technical solution of this disclosure embodiment based on the idea of ​​grouping is not an easy task. If only some connecting parts and branches are arranged vertically, parasitic capacitance can obviously be reduced. However, simply changing the direction of each group will cause the electrical connection to be broken. In a specific example, the first connecting electrode and the second connecting electrode together include 16 pairs of interdigital electrodes. If they are divided into 4 groups, each group includes 4 pairs of interdigital electrodes, simply changing the direction of the interdigital electrodes in each group will cause the first connecting electrode 71 and the second connecting electrode 72 to have breakpoints, as shown in Figures 6 and 7. Electrode 72 cannot be connected as a whole on the same plane, requiring via jumper wire technology to achieve electrical connection of four groups of branches, which greatly increases the fabrication process. After countless layout iterations, the inventors obtained the electrode arrangement shown in Figures 6 and 7. By using a grouping and non-parallel dense arrangement strategy, the directional arrangement of the electrodes was changed, the distance between non-adjacent parallel electrodes was increased, and the off-state parasitic capacitance of the switching diode was reduced. Furthermore, the first connecting electrode and the second connecting electrode were set on the same layer, and the same-layer electrical connection of multiple first branches and multiple second branches in the first switching unit could be achieved without adding via jumper wire technology steps.

[0122] Second example:

[0123] The RF switch in this example includes at least one switching diode, and one switching diode includes one or more repeating units. Each repeating unit includes four first switching units 80; the first switching units 80 may be the same as those in the first example.

[0124] In one example, as shown in Figure 8, a switching diode includes only one repeating unit. Two adjacent first switching units 80 arranged in the row direction X are symmetrically arranged about a straight line Z extending along the column direction Y as an axis of symmetry, and two adjacent first switching units 80 arranged in the column direction Y are symmetrically arranged about a straight line W extending along the row direction X as an axis of symmetry.

[0125] The RF switch provided in this example includes at least one switching diode, each switching diode including at least one repeating unit, and each repeating unit including four first switching units. This further reduces the grouping size of the interdigitated electrodes, reduces the number of pairs of non-adjacent parallel electrodes, and further increases the distance between non-adjacent parallel electrodes. This significantly reduces the off-state parasitic capacitance between the first connecting electrode and the second connecting electrode, improves the isolation of the RF switch, reduces the insertion loss of the RF switch, and enhances the performance of the RF switch.

[0126] In another example, as shown in Figure 9, the radio frequency switch includes four repeating units 90 arranged in an array, with multiple first branches interconnected by a first connection portion; and multiple second branches interconnected by a second connection portion.

[0127] It should be noted that the number of interdigitated electrodes in the figure is for illustrative purposes only and is not intended to limit the scope. The grouping of interdigitated electrodes in the above implementation is a grouping based on the original method. For example, taking a switching diode with 16 pairs of interdigitated electrodes as an example, the off-state parasitic capacitance of a switching diode formed by dividing the 16 pairs of interdigitated electrodes into four groups and arranging them in a non-parallel, dense manner is greater than that formed by dividing the 16 pairs of interdigitated electrodes into 16 groups and arranging them in a non-parallel, dense manner. The larger the number of groups, the smaller the number of interdigitated electrodes in each group. Therefore, the off-state parasitic capacitance of each group in the latter is smaller than that in the former, and there is no significant mutual parasitic interference between groups, which can significantly reduce the number of interconnecting electrode layers. The specific number of groups is determined based on the process conditions and the surface area of ​​the RF device.

[0128] Third example:

[0129] The radio frequency switch in this example includes at least one switching diode, and a switching diode includes one or more first switching units.

[0130] In a specific example, as shown in Figures 10 and 11, a switching diode includes only one first switching unit 81. The first switching unit 81 includes a first connection portion 15, at least one first branch component 13 connected to the first connection portion 15, and a second connection portion 16, at least one second branch component 14 connected to the second connection portion 16; the first branch component 13 and the second branch component 14 are alternately arranged.

[0131] In this example, a first branch component 13 corresponds to an interdigitated electrode of the first connecting electrode, and a second branch component 14 corresponds to an interdigitated electrode of the second connecting electrode.

[0132] A portion of a first branch assembly 13 extends into the first interlayer insulating layer 60 and is electrically connected to its corresponding N-type semiconductor 501; a portion of a second branch assembly 14 extends into the first interlayer insulating layer 60 and is electrically connected to its corresponding P-type semiconductor 503.

[0133] A first branch group 13 includes a plurality of sequentially connected first branches 131, wherein the plurality of first branches 131 include at least one first branch extending along the row direction X and at least one first branch extending along the column direction Y.

[0134] A second branch group 14 includes a plurality of sequentially connected second branches 141, wherein the plurality of second branches 141 include at least one second branch extending along the row direction X and at least one second branch extending along the column direction Y.

[0135] The RF switch in this embodiment includes at least one switching diode. Each switching diode includes at least one first switching unit. The first switching unit includes multiple alternating first branch components and second branch components. Each first branch component includes multiple sequentially linked first branches with different extension directions. This changes the electric field distribution between the alternating first branch components and second branch components, concentrating the electric field between them towards the bending point. This reduces the lateral diffusion of the electric field in the dielectric, reduces the parasitic capacitance between non-adjacent parallel electrodes, thereby reducing the off-state parasitic capacitance of the switching diode, improving the isolation of the RF switch, and reducing the insertion loss of the RF switch.

[0136] In one specific embodiment, the first branch is a metallic material, and the first branch group 13 can be understood as a structure obtained by bending a metallic electrode at least once.

[0137] The second branch is a metallic material. The second branch group 14 can be understood as a structure obtained by bending a metallic electrode at least once.

[0138] In a specific embodiment, as shown in FIG10, the first branch component 13 includes a first branch 131 extending along the row direction X and a first branch 131 extending along the column direction Y connected together; the second branch component 14 includes a second branch 141 extending along the row direction X and a second branch 141 extending along the column direction Y connected together; the orthographic projections of the first branch component and the second branch component on the substrate are both L-shaped.

[0139] Specifically, a first branch component is an interdigitated electrode of a first connecting electrode, and a second branch component is an interdigitated electrode of a second connecting electrode.

[0140] The RF switch in this embodiment includes at least one switching diode, and each switching diode includes at least one first switching unit. Each first switching unit includes at least one pair of interdigital electrodes. This embodiment changes the electric field distribution between the interdigital electrodes by bending the interdigital electrodes, reducing the lateral diffusion of the electric field in the dielectric, thereby reducing the parasitic capacitance between non-adjacent parallel electrodes, improving the isolation of the RF switch, and reducing the insertion loss of the RF switch.

[0141] In one specific embodiment, as shown in FIG11, the first branch component 13 includes two first branches 131 extending along the column direction Y, and a first branch 131 extending along the row direction X connecting the two first branches 131 extending along the column direction Y.

[0142] The second branch component 14 includes two second branches 141 extending along the column direction Y, and a second branch 141 extending along the row direction X connecting the two second branches 141 extending along the column direction Y.

[0143] The RF switch in this embodiment includes at least one switching diode, and each switching diode includes at least one first switching unit. Each first switching unit includes at least one pair of interdigital electrodes. By deforming the interdigital electrodes to include two bending points, the electric field distribution between the interdigital electrodes is changed, causing the electric field distribution between the interdigital electrodes to concentrate at the two bending points. This further reduces the lateral diffusion of the electric field in the dielectric, thereby reducing the parasitic capacitance between non-adjacent parallel electrodes, reducing the off-state parasitic capacitance of the switching diode, improving the isolation of the RF switch, reducing the insertion loss of the RF switch, and ensuring the quality of the RF switch.

[0144] In this embodiment, a first branch component, which is an interdigitated electrode of the first connecting electrode, and a second branch component, which is an interdigitated electrode of the second connecting electrode, are zigzag-shaped interdigitated electrodes. This can be understood as being obtained by bending a strip metal electrode twice. This embodiment does not limit the bending angle; bending angles of 30°, 60°, and 90° are all acceptable. The larger the angle, the better the effect.

[0145] It should be noted that this embodiment does not limit the specific shape of the interdigitated electrode. In addition to the interdigitated electrode shapes mentioned in the two implementation methods above, any electrode that can achieve changes in electric field distribution and reduce parasitic capacitance between non-adjacent parallel electrodes can be used, such as a wavy interdigitated electrode or a zigzag interdigitated electrode with more bends.

[0146] Fourth example:

[0147] The radio frequency switch of this example includes at least one switching diode, and each switching diode includes one or more repeating units, each repeating unit including four first switching units; the first switching units may be any of the first switching units provided in the third example.

[0148] In a specific embodiment, as shown in FIG12, two first switch units 81 arranged adjacent to each other in the row direction X are symmetrically arranged with the straight line Z extending along the column direction as the axis of symmetry, and two first switch units 81 arranged adjacent to each other in the column direction Y are symmetrically arranged with the straight line extending along the row direction as the axis of symmetry.

[0149] The RF switch in this embodiment is designed in groups, with adjacent groups of first switch units being axially symmetrical. This reduces the device capacitance, further shrinks the device area, and improves the device integration.

[0150] In one specific embodiment, the shape of the first switching unit 81 is shown in FIG10. The four first switching units 81 in the repeating unit are connected into a single structure by first branch components 13 or second branch components 14 arranged adjacent to each other.

[0151] In a specific embodiment, as shown in FIG13, for a repeating unit, the image formed by the orthographic projection of two adjacent first switching units 81 onto the substrate 40 is rotationally symmetric about the intersection point Q of the first branch components of the four first switching units 81.

[0152] Specifically, for a repeating unit in which the first branch components of four first switching units 81 are connected as a single unit, the image formed by the orthographic projection of two connected first switching units onto the substrate 40 is 90° rotationally symmetrical about the intersection of the first branch components of the four first switching units 81.

[0153] For a repeating unit where the second branch components of the four first switching units 81 are connected as a single unit, the image formed by the orthographic projection of the two connected first switching units about the substrate 40 is 90° rotationally symmetrical about the intersection of the second branch components of the four first switching units 81.

[0154] The first branch components 13 of the four first switching units 81 in a repeating unit, which are arranged adjacent to each other, are connected into a single structure, or the second branch components 14 of the four first switching units 81 in a repeating unit, which are arranged adjacent to each other, are connected into a single structure.

[0155] In the repeating unit provided in this embodiment, the two adjacent groups of first switching units are 90° rotationally symmetrical, which reduces the device capacitance, reduces the device area, and improves the device integration.

[0156] In a specific embodiment, as shown in Figures 13 and 14, the radio frequency switch further includes a first lead-out portion 17 and a second lead-out portion 18. The first lead-out portion 17 and the second lead-out portion 18 are respectively located at both ends of the radio frequency switch. The first lead-out portion 17 is connected to the first connecting electrode 71, and the second lead-out portion 18 is connected to the second connecting electrode 72.

[0157] Specifically, the first connecting electrode 71 and the second connecting electrode 72 are disposed in the same layer, and the orthographic projection of the first connecting electrode 71 on the substrate and the orthographic projection of the second connecting electrode 72 on the substrate are independent of each other. The first connecting electrode 71 is connected to the positive terminal of the external signal line through the first lead-out portion 17, and the second connecting electrode 72 is connected to the negative terminal of the external signal line through the second lead-out portion 18.

[0158] This embodiment, by providing a lead-out section, facilitates the connection between the RF switch and external circuits, and reduces the contact resistance between the RF switch and external circuits, thereby improving signal transmission efficiency.

[0159] In one specific embodiment, as shown in FIG14, a switching diode includes four repeating units 91. Two repeating units arranged adjacent to each other in the row direction X are symmetrically arranged with a straight line extending along the column direction Y as the axis of symmetry.

[0160] In one specific embodiment, as shown in FIG15, a switching diode includes four repeating units 91. Two repeating units arranged adjacent to each other in the row direction X are symmetrically arranged with a straight line extending along the column direction Y as the axis of symmetry. The first connecting part of two repeating units arranged adjacent to each other in the column direction Y is connected into an integral structure.

[0161] The RF switch provided in this example includes at least one switching diode, and the switching diode includes at least one repeating unit, and the repeating unit includes four first switching units, thereby further reducing the grouping size of the interdigitated electrodes, reducing the number of pairs of adjacent parallel electrodes, and further increasing the distance between non-adjacent parallel electrodes. This significantly reduces the off-state parasitic capacitance of the switching diode, improves the isolation of the RF switch, reduces the insertion loss of the RF switch, and enhances the performance of the RF switch.

[0162] Fifth example:

[0163] As shown in Figures 16-18, the radio frequency switch of this example includes at least one switching diode. The switching diode includes a first connecting electrode 71 and a second connecting electrode 72. The first connecting electrode 71 includes a first connecting portion and a plurality of first branch groups 731 connected to the first connecting portion. The second connecting electrode 72 includes a second connecting portion and a plurality of second branch groups 741 connected to the second connecting portion. The first branch groups 731 and the second branch groups 741 are alternately arranged.

[0164] The N-type semiconductor 501 of the semiconductor layer has the same morphology as the first connecting electrode 71, and the P-type semiconductor 503 has the same morphology as the second connecting electrode 72. Therefore, the intrinsic semiconductor of the semiconductor layer corresponds to the morphology of the gap 76 between the first connecting electrode 71 and the second connecting electrode 72.

[0165] In this embodiment, a first branch group 731 is an interdigitated electrode of the first connecting electrode 71, and a second branch group 741 is an interdigitated electrode of the second connecting electrode 72.

[0166] A portion of a first branch group 731 extends into the first interlayer insulating layer 60 and is electrically connected to a corresponding N-type semiconductor 501; a portion of a second branch group 741 extends into the first interlayer insulating layer 60 and is electrically connected to a corresponding P-type semiconductor 503.

[0167] As shown in Figure 17, a first branch group 731 includes a plurality of interconnected first branches 712, wherein at least some of the first branches 712 extend in different directions.

[0168] As shown in Figure 18, a second branch group 732 includes a plurality of interconnected second branches 722, wherein at least some of the second branches 722 extend in different directions.

[0169] In a specific implementation example, the orthographic projection of the first branch group 731 on the substrate is a first pattern; the first pattern includes a first side and a second side disposed opposite to each other along the extension direction of the first connecting portion; the first side forms a first concave pattern 7311, and the second side forms a first convex pattern 7312; and the first concave pattern 7311 and the first convex pattern 7312 are adapted to each other.

[0170] In a specific example, with the extension direction of the first connecting part as the row direction X, a cross-shaped recessed area is formed on the first side of the first pattern, and a cross-shaped protrusion is formed on the second side; the first side and the second side are arranged opposite to each other in the row direction X.

[0171] It should be noted that the first protruding shape is not limited to a cross shape, but can be any image, such as a triangle, a rectangle or a semicircle; and the first protruding shape and the first concave shape can be located on the same side or different sides of the first pattern, for example, both can be located on the first side and the second side.

[0172] To further improve the overall electrode distribution of the RF switch and enable the device to achieve a highly uniform electric field distribution under high voltage, this disclosure proposes a fractal transformation strategy. This strategy involves designing the morphology of individual interdigitated electrodes to increase the length of the interface between the positive and negative electrodes. Since the N-type semiconductor in the semiconductor layer corresponds to the morphology of the corresponding interdigitated electrode in the connecting electrode layer, and the P-type semiconductor also corresponds to the morphology of the corresponding interdigitated electrode in the connecting electrode layer, the fractal design increases the length of the interface between the P-type and N-type semiconductors. This increases the length of the intrinsic semiconductor, thereby increasing the effective device width of the switching diode, reducing the resistance per unit width of the switching diode, reducing the on-state resistance of the switching diode, and effectively reducing the off-state parasitic capacitance of the switching diode. This, in turn, improves the isolation of the RF switch and reduces its insertion loss.

[0173] The RF switch provided in this example features a patterned electrode design that results in a more uniform electric field distribution. It also increases the junction length between the first and second connecting electrodes, thereby increasing the length of the PIN junction region in the semiconductor layer, increasing the effective width of the switching diode, reducing the on-state resistance of the switching diode, and effectively reducing the off-state parasitic capacitance of the switching diode. This improves the isolation of the RF switch, reduces its insertion loss, and ultimately enhances its performance.

[0174] Sixth example:

[0175] The radio frequency switch provided in this example includes at least one switching diode. The switching diode includes a first connection electrode 71 and a second connection electrode 72. The first connection electrode 71 is composed of a plurality of interconnected first branches 712, and the second connection electrode 72 is composed of a plurality of interconnected second branches 722.

[0176] The N-type semiconductor 501 has the same morphology as the first connecting electrode 71, the P-type semiconductor 503 has the same morphology as the second connecting electrode 72, and the intrinsic semiconductor 502 of the semiconductor layer 50 has the same morphology as the gap 76 between the first connecting electrode 71 and the second connecting electrode 72.

[0177] In one example, as shown in Figures 19 and 20, the gap 76 between the orthographic projection of the first connecting electrode 71 on the substrate 40 and the orthographic projection of the second connecting electrode 72 on the substrate 40 is a Hilbert curve, and correspondingly, the orthographic projection of the intrinsic semiconductor 502 on the substrate 40 is a Hilbert curve.

[0178] This embodiment employs a fractal design for the connecting electrodes, resulting in a more uniform electric field distribution in the RF switch and increasing the junction length between the first and second connecting electrodes. This increases the length of the PIN junction region, the width of the effective device, and reduces the on-state resistance of the switching diode, effectively reducing its off-state parasitic capacitance. Consequently, it improves the isolation of the RF switch and reduces its insertion loss. Furthermore, this fractal design saves device area, and the more uniform arrangement of the first and second connecting electrodes enhances the device's integration density.

[0179] In one example, the Hilbert curve is a third-order Hilbert curve, a fourth-order Hilbert curve, or a fifth-order Hilbert curve.

[0180] In one example, as shown in Figures 21 and 22, the gap 76 between the orthographic projection of the first connecting electrode 71 on the substrate 40 and the orthographic projection of the second connecting electrode 72 on the substrate 40 is a Peano curve, and correspondingly, the orthographic projection of the intrinsic semiconductor 502 on the substrate 40 is a Peano curve.

[0181] Radio frequency switches are unidirectional current-type devices, and are usually designed as square devices. However, Hilbert fractal electrodes are difficult to divide within a square, which affects the design freedom of the device size. Therefore, in this embodiment, the connecting electrodes are designed as Piano fractal electrodes, which reduces the design difficulty and increases the design freedom.

[0182] The above-mentioned Peano curve type is a third-order Peano curve, a fourth-order Peano curve, or a fifth-order curve type.

[0183] This embodiment employs a fractal design for the connecting electrodes, specifically a Peano fractal electrode. This increases the junction length between the first and second connecting electrodes, thereby increasing the length of the PIN junction region, the width of the effective device, and reducing the on-state resistance per unit width of the switching diode. This effectively reduces the off-state parasitic capacitance of the switching diode, thereby improving the isolation of the RF switch and reducing its insertion loss. Furthermore, this fractal design saves device area, facilitates partitioning, reduces design complexity, and increases design freedom.

[0184] One embodiment of this disclosure provides an electronic device that includes a radio frequency switch provided in the first embodiment of this application.

[0185] Radio frequency (RF) switches are used to enable electronic devices to switch between different RF signal sources, such as selecting between multiple antennas to support different communication standards.

[0186] In one specific embodiment, the electronic device can be a GSG (Ground-Signal-Ground) probe with a GSG signal connection port. Its structure is shown in Figure 23, including ground wires 401 at the top and bottom ends and a signal line structure in the middle. The signal line structure includes an RF switch 402, a positive terminal 403, and a negative terminal 404. The RF switch 402 can be any type of RF switch provided in the first embodiment of the present invention. One end of the RF switch 402 is electrically connected to the positive terminal 403 of the signal line, and the other end of the RF switch 402 is electrically connected to the negative terminal 404 of the signal line.

[0187] In one specific embodiment, the electronic device is an antenna, which includes any of the radio frequency switches described above.

[0188] The antenna also includes a transceiver unit, an RF transceiver, a signal amplifier, a power amplifier, and a filtering unit. This antenna can function as either a transmitting or receiving antenna. The transceiver unit can include a baseband and a receiver. The baseband provides signals in at least one frequency band, such as 2G, 3G, 4G, or 5G signals, and transmits these signals to the RF transceiver. The transparent antenna in the communication system receives the signal, which is then processed by the filtering unit, power amplifier, signal amplifier, and RF transceiver (not shown in the diagram) before being transmitted to the receiver in the transceiver unit. The receiver could be, for example, a smart gateway.

[0189] Furthermore, the RF transceiver is connected to the transceiver unit and is used to modulate the signals transmitted by the transceiver unit, or to demodulate the signals received by the transparent antenna before transmitting them to the transceiver unit. Specifically, the RF transceiver may include a transmitting circuit, a receiving circuit, a modulation circuit, and a demodulation circuit. After the transmitting circuit receives various types of signals provided by the baseband, the modulation circuit can modulate the various types of signals provided by the baseband before transmitting them to the antenna. The transparent antenna receives the signals and transmits them to the receiving circuit of the RF transceiver. The receiving circuit then transmits the signals to the demodulation circuit, which demodulates the signals before transmitting them to the receiving end.

[0190] Furthermore, the RF transceiver is connected to a signal amplifier and a power amplifier, which are then connected to a filtering unit. The filtering unit is connected to at least one antenna. During signal transmission in the communication system, the signal amplifier improves the signal-to-noise ratio (SNR) of the RF transceiver's output signal before transmitting it to the filtering unit; the power amplifier amplifies the power of the RF transceiver's output signal before transmitting it to the filtering unit. The filtering unit may specifically include a duplexer and a filtering circuit. The filtering unit combines the signals output from the signal amplifier and power amplifier, filters out clutter, and transmits them to the transparent antenna, which radiates the signal. During signal reception in the communication system, the antenna receives the signal and transmits it to the filtering unit. The filtering unit filters out clutter from the received signal and transmits it to the signal amplifier and power amplifier. The signal amplifier increases the gain of the received signal, improving the SNR; the power amplifier amplifies the power of the received signal. The signal received by the antenna, after processing by the power amplifier and signal amplifier, is transmitted to the RF transceiver, which then transmits it to the transceiver unit.

[0191] In some examples, the signal amplifier may include various types of signal amplifiers, such as low-noise amplifiers, without limitation.

[0192] In some examples, the antenna provided in this disclosure also includes a power management unit connected to a power amplifier to provide voltage to the power amplifier for amplifying signals.

[0193] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A radio frequency switch, comprising a substrate, and a semiconductor layer, a first interlayer insulating layer, and a connection electrode layer sequentially stacked on the substrate; The semiconductor layer includes a plurality of N-type semiconductors and a plurality of P-type semiconductors arranged alternately, and an intrinsic semiconductor sandwiched between the N-type semiconductors and the P-type semiconductors; The connection electrode layer includes a first connection electrode and a second connection electrode, wherein the first connection electrode is electrically connected to the plurality of N-type semiconductors; and the second connection electrode is connected to the plurality of P-type semiconductors. The first connection electrode includes a plurality of first branches; the second connection electrode includes a plurality of second branches; the orthographic projection of one of the N-type semiconductors onto the substrate at least partially overlaps with the orthographic projection of one of the first branches onto the substrate, and the orthographic projection of one of the P-type semiconductors onto the substrate at least partially overlaps with the orthographic projection of one of the second branches; wherein... At least some of the first branches extend in different directions.

2. The radio frequency switch of claim 1, wherein, The radio frequency switch includes at least one first switching unit, and the first connection electrode further includes a first connection portion; the second connection electrode further includes a second connection portion. The first connecting portion includes a plurality of first sub-connecting portions, and the second connecting portion includes a plurality of second sub-connecting portions; the first sub-connecting portions are connected to at least one first branch, and the second sub-connecting portions are connected to at least one second branch; A first switching unit includes four first sub-connection portions and four second sub-connection portions, as well as first branches connected to the four first sub-connection portions and second branches connected to the four second sub-connection portions; The four second sub-connecting parts in the first switching unit define four quadrants, and the second branches connected to the four second connecting parts are respectively located in the four quadrants; The second branch includes a first end connected to the second sub-connecting portion and a second end disposed opposite to the first end and located in different quadrants. The first end of the second branch points to the second end in different directions.

3. The radio frequency switch of claim 2, wherein, The four first sub-connecting parts in the first switching unit are connected.

4. The radio frequency switch of claim 2, wherein, The radio frequency switch includes at least one repeating unit, and one repeating unit includes four of the first switching units; For the repeating unit, two first switch units arranged adjacent to each other in the row direction are symmetrically arranged with a straight line extending along the column direction as the axis of symmetry, and two first switch units arranged adjacent to each other in the column direction are symmetrically arranged with a straight line extending along the row direction as the axis of symmetry.

5. The radio frequency switch of claim 1, wherein, The radio frequency switch includes at least one first switching unit; the first connecting electrode further includes a first connecting portion; the second connecting electrode further includes a second connecting portion; Some of the plurality of first branches extend along the row direction, and some extend along the column direction; Some of the plurality of second branches extend along the row direction, and some extend along the column direction; At least one first branch extending along the row direction and at least one first branch extending along the column direction are sequentially connected to form a first branch assembly; each first branch assembly is connected to a first connecting portion; at least one second branch extending along the row direction and at least one second branch extending along the column direction are connected to form a second branch assembly. A first switching unit includes a first connecting portion and at least one first branch component, and a second connecting portion and at least one second branch component; each second branch component is connected to the second connecting portion; the first branch component and the second branch component are alternately arranged.

6. The radio frequency switch of claim 5, wherein, The first branch component includes a first branch extending along the row direction and a first branch extending along the column direction; the second branch component includes a second branch extending along the row direction and a second branch extending along the column direction. The first connecting part connects to a first branch extending along the column direction, and the second connecting part connects to a second branch extending along the row direction.

7. The radio frequency switch of claim 5, wherein, The first branch component includes a first branch extending along the row direction and two first branches along the column direction, the two first branches along the column direction being respectively connected to a first end and a second end of the first branch extending along the row direction; The second branch component includes a second branch extending along the row direction and two second branches along the column direction, the two second branches along the column direction being respectively connected to a third end and a fourth end of the second branch extending along the row direction; The first branch extending along the row direction is connected to the first end of the first branch extending along the column direction, and the second branch extending along the column direction is connected to the second connecting portion.

8. The radio frequency switch of any of claims 5-7, wherein, The radio frequency switch includes at least one repeating unit, and one repeating unit includes four of the first switching units; For the repeating unit, two first switch units that are adjacent in the row direction are symmetrically arranged with a straight line extending along the column direction as the axis of symmetry, and two first switch units that are adjacent in the column direction are symmetrically arranged with a straight line extending along the row direction as the axis of symmetry. or, For the repeating unit, two adjacent first switching units are rotationally symmetrical about the intersection point of the first branch components of the four first switching units.

9. The radio frequency switch of claim 8, wherein, The four first switching units in the repeating unit are connected to each other as a single structure by the first branch components.

10. The radio frequency switch of claim 8, wherein, The radio frequency switch further includes a first lead-out portion and a second lead-out portion; the first lead-out portion and the second lead-out portion are respectively located at both ends of the radio frequency switch, and the first lead-out portion is connected to the first connecting electrode, and the second lead-out portion is connected to the second connecting electrode.

11. The radio frequency switch of claim 1, wherein, The plurality of first branches are divided into a plurality of first branch groups, and the first branch group includes a plurality of first branches that are interconnected; the first connecting electrode further includes a first connecting portion; the second connecting electrode further includes a second connecting portion. Each of the first branch groups is spaced apart and connected to the first connecting part; each of the second branch groups is spaced apart and connected to the second connecting part.

12. The radio frequency switch of claim 9, wherein, The orthographic projection of the first branch group on the substrate is a first pattern; the first pattern includes a first side and a second side disposed opposite to each other along the extension direction of the first connecting portion; the first side forms a first concave pattern, and the second side forms a first convex pattern; and the first concave pattern is adapted to the first convex pattern.

13. The radio frequency switch of claim 12, wherein, The first protruding pattern includes a first part and a second part that are arranged in an intersecting manner.

14. The radio frequency switch according to claim 1, wherein, The plurality of first branches are interconnected, and the plurality of second branches are interconnected; The intrinsic semiconductor's orthogonal projection onto the substrate is a Hilbert curve.

15. The radio frequency switch according to claim 1, wherein, The plurality of first branches are interconnected, and the plurality of second branches are interconnected; The intrinsic semiconductor's orthogonal projection onto the substrate is a Peano curve.

16. An electronic device, wherein, Includes the radio frequency switch as described in any one of claims 1-15.

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