Power semiconductor module and method of producing a power semiconductor module

Abstract

A power semiconductor module (1) comprising a power semiconductor device (2) and a terminal structure ( 3) electrically connected to the power semiconductor d evice (2) is specified, wherein - the terminal structure (3) comprises an interface portion (4) with a surface structure (41) with a plurality of slices (45) extending obliquely or vertically with respect to the interface portion (4); and - the surface structure (41) forms an elastic porti on (35) of the terminal structure (3). Further, a method of producing a power semiconducto r module (1) is specified. Significant Figure: Fig. 2A

Description

[0001] Description

[0002] Power semiconductor module and method of producing a power semiconductor module

[0003] The present disclosure relates to a power semiconductor module and method of producing a power semiconductor module.

[0004] Embodiments of the disclosure relate to an improved way to provide an electrical contact to a power semiconductor device.

[0005] A power semiconductor module comprising a power semiconductor device is specified.

[0006] For example, the power semiconductor module is configured for operating at large electrical currents, for instance of at least 100 A and / or at voltages of at least 1000 V. For example, the power semiconductor module is configured for high voltage direct current (HDVC) applications.

[0007] According to an embodiment of the power semiconductor module, the power semiconductor module comprises a power semiconductor device and a terminal structure electrically connected to the power semiconductor device. The terminal structure comprises an interface portion with a surface structure with a plurality of slices. The surface structure forms an elastic portion of the terminal structure.

[0008] In particular, the interface portion is a contact portion of the terminal structure at or around an interface between two contact partners of the power semiconductor module, wherein the surface structure forms an elastic portion of the terminal structure.

[0009] Thus, the surface structure with the slices may act as an elastic portion of a press contact. A spring travel of the elastic portion may be appropriately defined by the height of the slices and / or by the distance between the slices.

[0010] In this context, the height refers to an extent of the slices in a direction perpendicular to the interface portion. The distance refers to an edge-to-edge distance between adjacent slices in a direction parallel to the interface portion.

[0011] Compared to a plain contact between two flat surfaces, an improved electrical contact between the contact partners can be obtained. Further, a good thermal conductivity can be obtained at the interface by means of the plurality of slices. In particular, the application of pressure helps to improve the thermal and / or electrical contact.

[0012] In addition, the surface structure with the slices may compensate for mechanical uncertainties like tilt or unevenness between two contact partners. This may result in lower mechanical stresses, resulting in improved reliability of the power semiconductor module.

[0013] The terminal structure comprising the surface structure may directly adjoin the power semiconductor device.

[0014] Alternatively, a further component such as a preform or another electrically conductive component may be arranged between the power semiconductor device and the terminal structure. The terminal structure may be formed from a single component, such as a plate or a columnar part, that may be pressed against the power semiconductor device. For example, a surface of the terminal structure that faces the power semiconductor device comprises the surface structure.

[0015] Alternatively, the terminal structure may comprise two or more components. In particular, two or more components of the terminal structure may be arranged one above the other in a direction extending in perpendicular to the interface portion.

[0016] In this case, the interface portion may also be arranged between two components of the terminal structure.

[0017] The terminal structure of the power semiconductor module may also comprise two or more of such interface portions with a surface structure, wherein these interface portions may be stacked in a vertical direction. Thus, two or more elastic portions vertically spaced apart from one another may be present in the power semiconductor module.

[0018] Further, two contact partners may each comprise a surface structure, so that these surface structures directly adjoin each other.

[0019] The "vertical direction" refers to a direction perpendicular to the interface portion.

[0020] According to a further embodiment of the power semiconductor module, the plurality of slices extends obliquely or vertically with respect to the interface portion. Alternatively, the slices may extend parallel to the interface portion.

[0021] According to a further embodiment of the power semiconductor module, at least two of the slices directly adjoin each other. In other words, there may be a direct mechanical contact between adj acent slices. This direct mechanical contact may occur during production of the power semiconductor module as the slices may bend in response to a pressure applied to the surface structure.

[0022] According to a further embodiment of the power semiconductor module, the plurality of slices is formed in one piece with a base portion adjoining the plurality of slices. The one or more interface portions may be an integral part of the terminal structure or a separate part being fixed to the terminal structure.

[0023] For example, the slices are formed by a skiving process. This process is also referred to as "cut-raising". In a skiving process, slices and an underlying base portion may be formed by cutting slices in a predetermined thickness and at a predetermined distance from one another into a base material. These slices are then lifted such that they substantially extend vertically or obliquely with respect to the underlying base portion.

[0024] According to a further embodiment of the power semiconductor module, a distance between adj acent slices next to the base portion is in a range from 50 µm to 1 mm. During the production of the power semiconductor module, the slices may be deformed such that at least some of the adj acent slices directly adj oin each other at a point that is spaced apart from the base portion.

[0025] According to a further embodiment of the power semiconductor module, a height of the slices in a direction perpendicular to the interface portion is in a range from 0.5 mm to 5 mm. By appropriately setting the height and / or the distance of the slices, the spring travel of the elastic portion may be adapted to the specific requirements on the surface structure. Further, the thickness of the slices may have an impact on the mechanical behaviour.

[0026] The terminal structure may also comprise a plurality of fields of slices having different orientation in a lateral direction. For example, the terminal structure may comprise multiple rows of slices which may be arranged in a staggered manner.

[0027] According to a further embodiment of the power semiconductor module, the terminal structure comprises a columnar metal portion wherein the surface structure is formed on an end of the columnar metal portion. A cross-section of the columnar metal portion may comprise one or more curved sections and / or one or more straight sections. For example, the columnar metal portion has a round, oval, rectangular or square cross section.

[0028] For example, the columnar metal portion comprises copper or aluminum or an alloy. For example, the alloy may comprise copper and / or aluminum.

[0029] According to a further embodiment of the power semiconductor module, the columnar metal portion comprises a further surface structure on an opposite end of the columnar metal portion. Thus, two surface structures forming elastic portions are stacked one above the other in the vertical direction.

[0030] The surface structure and the further surface structure may be similar or may differ from one another by at least one parameter, such as the height of the slices or the distance between adjacent slices or the width of the slices.

[0031] It has been found that such columnar metal portions may partly or completely replace spring terminal structures. For example, spring terminal structures are used in so called PressPak or StakPak submodules, where individual pressure contacts to semiconductor chips arranged in an array are provided.

[0032] This may result in less manufacturing effort and lower costs.

[0033] Further, internal losses may be reduced and the heat dissipation may be improved due to the improved electrical and thermal contact so that the terminal structure may withstand higher currents during regular operation and / or in a short-circuit failure mode (SCFM).

[0034] Further, a tilt or unevenness compensation may be improved compared to conventional solutions using spring terminal structures so that the reliability of the power semiconductor module can be improved.

[0035] However, the described surface structure acting as elastic portion may also be combined with a spring terminal structure. According to a further embodiment of the power semiconductor module, the terminal structure comprises a spring terminal structure. The spring terminal structure may comprise, for example, a presspin body and / or a spring and / or a bracket and / or further components such as one or more washers and / or one or more spacers.

[0036] In particular, at least one elastic portion formed by the surface structure with the slices may be provided in addition to the spring terminal structure. For example, the elastic portion may be integrated into the spring terminal structure or may be arranged outside of the spring terminal structure. Further, the elastic portion may be arranged between the spring terminal structure and other parts of the terminal structure.

[0037] According to a further embodiment of the power semiconductor module, the interface portion is located between two components of the spring terminal structure. Alternatively, the interface portion may be arranged between the spring terminal structure and a further component of the power semiconductor module. In particular, the interface portion may directly adjoin a component of the spring terminal structure. For example, at least one of the following interfaces may comprise or be configured as an interface portion with a surface structure:

[0038] (i) between the presspin body and a contact partner such as the power semiconductor device or a preform,

[0039] (ii) between the presspin body and the bracket,

[0040] (iii) between the bracket and a lower spacer,

[0041] (iv) between the lower spacer and the lower washer,

[0042] (v) between the upper washer and the upper spacer, (vi) between upper spacer and the bracket,

[0043] (vii) between the bracket and a contact partner arranged on the side of the spring terminal structure that faces away from the power semiconductor device such as a top plate.

[0044] Here, the lower spacer and the lower washer are arranged on a side of the spring that faces the power semiconductor device, whereas the upper spacer and the upper washer are arranged on a side of the spring that faces away from the power semiconductor device. The bracket may provide current paths for carrying the current laterally beside the spring.

[0045] According to a further embodiment of the power semiconductor module, the power semiconductor module comprises a further power semiconductor device wherein a terminal of the terminal structure is electrically connected to the power semiconductor device and a further terminal of the terminal structure is electrically connected to the further power semiconductor device. Thus, the terminal and the further terminal may be arranged laterally side-by-side to electrically contact adj acent power semiconductor devices. For example, the power semiconductor devices are electrically connected in parallel.

[0046] The power semiconductor device and the further power semiconductor device may be provided as separate semiconductor chips or may be integrated into a common semiconductor chip or semiconductor wafer.

[0047] For example, several power semiconductor devices and associated terminals may be arranged in a row or in a two-dimensional array. According to a further embodiment of the power semiconductor module, the terminal and the further terminal are electrically connected to one another via a current distribution part. By means of the current distribution part, the short circuit capability may be improved. In particular, the short-circuit current can be carried additionally by neighbored terminals, and a larger amount of heat may be dissipated by neighbored terminals.

[0048] For example, the current distribution part provides an electrical parallel interconnection between the terminals. For example, the current distribution part is configured as a plate that extends in parallel or substantially in parallel to a base plate of the power semiconductor module on which the power semiconductor devices are mounted. The shape of the current distribution part may be varied in wide ranges. For example, the current distribution part may comprise rods or cables in addition to, or instead of, a plate-like structure.

[0049] According to a further embodiment of the power semiconductor module, the surface structure is formed by the current distribution part. Thus, the current distribution part may comprise a skived surface providing a surface structure acting as an elastic portion. The current distribution part may comprise a surface structure on only one side or on both sides.

[0050] Alternatively, the surface structure may directly adjoin the current distribution part. For example, the surface structure may be provided on the terminal portion below the distribution part and / or above the current distribution part. Further, a method of producing a power semiconductor module is specified.

[0051] According to an embodiment of the method, the method includes a step of providing a power semiconductor device, a step of providing a surface structure with a plurality of slices and a step of electrically connecting a terminal structure to the power semiconductor device, wherein the terminal structure comprises an interface portion with the surface structure as an elastic portion of the terminal structure.

[0052] In this way, a press contact to a power semiconductor device may be provided in a highly reliable manner.

[0053] According to a further embodiment of the method, the surface structure is produced by skiving. In particular, the slices may extend obliquely or vertically with respect to a base portion. By modifying parameters of the skiving process, the elastic portions of the surface structure may be adapted to specific requirements on the power semiconductor module.

[0054] The plurality of slices is plastically deformed during the formation by a skiving production process of the surface structure.

[0055] During assembly and operation of the power semiconductor module, the surface structure mainly experiences an elastic deformation.

[0056] The method described may be used to produce the power semiconductor module described here. Features and advantages described in connection with the power semiconductor module can therefore be used for the method and vice versa. Features described in connection with at least one embodiment of the power semiconductor module or the method may be combined with other features described in connection with other embodiments of the power semiconductor module or the method unless they are contradictory.

[0057] The accompanying figures are included to provide a further understanding. In the figures, elements of the same structure and / or functionality may be referenced by the same reference signs. It is to be understood that the embodiments shown in the figures are illustrative representations and are not necessarily drawn to scale.

[0058] In the Figures:

[0059] Figure 1A shows an embodiment of a power semiconductor module in a sectional view;

[0060] Figure 1B shows a detail of Figure 1A;

[0061] Figure 2A shows an embodiment of a power semiconductor module in a sectional view;

[0062] Figure 2B shows a detail of Figure 2A;

[0063] Figure 3 shows an embodiment of a power semiconductor module in a sectional view;

[0064] Figure 4 shows an embodiment of a power semiconductor module in a sectional view; Figure 5 shows an embodiment of a power semiconductor module in a sectional view;

[0065] Figure 6 shows an exemplary embodiment of a method of producing a power semiconductor module; and

[0066] Figures 7A and 7B show an embodiment of a method of producing a power semiconductor module by way of two intermediate steps illustrated in a sectional view.

[0067] Figure 1A illustrates an embodiment of a power semiconductor module 1 in a not to scale schematic sectional view with a terminal structure having a skived surface structure. A detail 99 thereof is depicted in Figure 1B.

[0068] The power semiconductor module 1 comprises a power semiconductor device 2 and a terminal structure 3 electrically connected to the power semiconductor device 2. The terminal structure 3 comprises an interface portion 4 with a surface structure 41 with a plurality of slices 45 extending obliquely or vertically with respect to the interface portion 4. The surface structure 41 forms an elastic portion 35 of the terminal structure 3.

[0069] The slices 45 may be produced by a skiving process. Thus, the slices 45 and an underlying base portion 46 may be formed in one piece. For example, the top of a base material is cut into slices 45 in a predetermined thickness and length and at a predetermined distance from another during production. The slices 45 are then lifted such that they substantially extend vertically or obliquely with respect to the base portion 46. The slices undergo plastic deformation during the skiving production process. During the module assembly in a customer application of the power semiconductor module 1, pressure may be exerted onto the slices 45, resulting in an elastic deformation of the slices 45.

[0070] In the finished power semiconductor module 1, the surface structure 41 with the slices 45 is mainly elastically deformable and acts as elastic portion. In exceptional situations where the pressure on the surface structure 41 during the semiconductor module assembly for a customer application (e.g. HVDC application) or during operation of the semiconductor module, is beyond the yield strength of the surface structure there may be a certain amount of plastic deformation.

[0071] Compared to a dry contact between two flat surfaces, the elastic portion 35 formed by the surface structure 41 with the slices 45 may result in a reduced electrical contact resistance and in an improved thermal contact, in particular in combination with a pressure applied between the contact partners.

[0072] A metal may be used as base material for the formation of the base portion 46 and the slices 45. For example the slices 45 comprise copper or an alloy comprising copper.

[0073] As illustrated in Figure 1B, at least some of the slices 45 may directly adj oin an adj acent slice 45.

[0074] For example, a height h of the slices 45 is in a range from 0.5 to 5 mm. The height of the slices 45 essentially defines the spring travel of the elastic portion 35 of the terminal structure 3. For example, a width of the slices is in a range from 50 µm to 500 pm.

[0075] For example, a distance d between adj acent slices in a range from 50 µm to 1 mm.

[0076] The terminal structure 3 may also comprise multiple rows of slices 45 which may be arranged in a staggered manner.

[0077] The terminal structure 3 may directly adj oin the semiconductor power device 2 as illustrated in Figure 1A. However, the terminal structure 3 may also be spaced apart from and electrically connected to the semiconductor power device 2. For example, a preform 21 may be arranged between the power semiconductor device 2 and the terminal structure 3 (cf. Fig. 2A).

[0078] In the embodiment illustrated in Figure 1A, the terminal structure 3 comprises a single terminal. The surface of the terminal structure 3 is provided on a side of the terminal that faces the power semiconductor device 2. However, the terminal structure 3 may also comprise two or more components as will be described in the subsequent embodiments.

[0079] In these subsequent embodiments, the surface structure 41 may be configured as described in connection with Figures 1A and 1B.

[0080] In the embodiment of Figure 2A, the power semiconductor module 1 comprises two or more power semiconductor devices 2 arranged laterally side-by-side on a base plate 61. Exemplarily Figure 2A shows a power semiconductor device 2 and a further power semiconductor device 25.

[0081] For example, the power semiconductor devices 2, 25 are arranged in a row or in a two-dimensional array on the base plate 61.

[0082] The terminal structure 3 comprises a terminal 31 electrically connected to the power semiconductor device 2 and a further terminal 32 electrically connected to the further power semiconductor device 25. A preform 21 is arranged between the terminal structure 3 and the power semiconductor devices 2, 25. However, the preform 21 may also be omitted.

[0083] The terminal structure 3 further comprises a top plate 38 extending in parallel or substantially in parallel to the base plate 61.

[0084] The power semiconductor module 1 may be configured such that two or more of these modules can be stacked one above the other. For example, the semiconductor power devices 2 may be electrically connected in series with a corresponding power semiconductor device of a further power semiconductor module by connecting the base plate 61 of the further power semiconductor module to the top plate 38 of the power semiconductor module 1.

[0085] In the embodiment of Figure 2A, the terminal 31 and the further terminal 32 each comprise a columnar metal portion 5 The surface structure 41 is formed on an end of the columnar metal portion 5 that faces away from the power semiconductor device 2. A further surface structure 42 is formed on an end of the columnar metal portion 5 that faces the power semiconductor device 2. Thus, two interface portions 4 with a surface structure providing an elastic portion are assigned to each power semiconductor device 2. In this drawing, a preform 21 is arranged on the power semiconductor chip 2, which is connected with the further surface structure 42.

[0086] As illustrated in Figure 2A, the surface structure 41 and the further surface structure 42 may differ from one another with respect to at least one parameter. For example, the height h of the surface structure 41 may be smaller than the height of the further surface structure 42, or vice versa. Thus, the spring travel on the interface portion between the columnar metal portions 5 and the top plate 38 is shorter than the spring travel at the interface portion that faces the power semiconductor device 2, or vice versa.

[0087] In the embodiment of Figure 2A, two elastic portions are arranged one above the other in the vertical direction.

[0088] However, one of the elastic portions may be omitted. In other words, a surface structure 41 may be formed on only one side of the columnar metal portion 5. Alternatively or in addition, a surface structure 41 may also be formed on a further component of the power semiconductor module 1 rather than on the columnar metal portion 5. For example, the surface structure 41 may be provided by the top plate 38.

[0089] The columnar metal portions 5 may replace spring terminal structures used in conventional power semiconductor modules with pressure contacts. However, the described surface structure can also be combined with a spring terminal structure as will be described in the subsequent Figures 3 to 5. For easier representation only possible positions of the interface portion 4 are depicted in the figures. In the embodiment of Figure 3 the spring terminal structure 70 comprises a presspin body 71, a bracket 72 used for carrying current and a spring 75. Further, the spring terminal structure 70 comprises a lower spacer 73 and a lower washer 74 arranged between the presspin body 71 and the spring 75. The lower spacer 73 is in mechanical contact with the bracket 72. Further, an upper washer 76 and an upper spacer 77 are arranged between the spring 75 and the bracket 72. The bracket is in contact with the presspin body 71 and with the top plate.

[0090] An interface portion 4 with a surface structure 41 may be located between two components of the spring terminal structure 70 or between the spring terminal structure 70 and a further component of the power semiconductor module 1.

[0091] Interface portion 4A is located between the presspin 71 and the preform 21 or between the presspin 71 and the power semiconductor device 2 if no preform 21 is present.

[0092] Interface portion 4B is located at the interface between the presspin body 71 and the bracket 72.

[0093] Interface portion 4C is located at the interface between the bracket 72 and the lower spacer 73.

[0094] Interface portion 4D is located at the interface between lower spacer 73 and lower washer 74.

[0095] Interface portion 4E is located at the interface between the upper washer 76 and the upper spacer 77. Interface portion 4F is located at the interface between the upper spacer 77 and the bracket 72.

[0096] Interface portion 4G is located at the interface between the bracket 72 and the top plate 38.

[0097] Of course, the described positions of interface portions 4A,..., 4G may be combined so that the terminal structure 3 comprises two or more interface portions 4 with a surface structure 41.

[0098] The elastic portion 35 provided by the surface structure 41 represents an additional elastic element in addition to the spring 75 of the spring terminal structure 70.

[0099] In the embodiment of Figure 4, the power semiconductor module 1 comprises a terminal 31 and a further terminal 32.

[0100] Exemplarily, the terminal 31 comprises a spring terminal structure as described in Figure 3 and the further terminal 32 comprises a columnar metal portion 5 as described in connection with Figures 2A and 2B. However, the power semiconductor module 1 may also comprise columnar metal portions 5 only or spring terminal structures 70 only.

[0101] The terminal 31 and the further terminal 32 are electrically connected to one another via a current distribution part 81. The current distribution part 81 may be a plate such as a metal plate that extends in parallel or substantially in parallel to the base plate 61.

[0102] For example, the current distribution part 81 may comprise copper or a copper alloy or another electrically conductive material. Two possible positions of interface portions 4, 4H are exemplarily depicted in Figure 4. Interface portion 4 is located between the current distribution part 81 and a terminal part 39, wherein the terminal part 39 is arranged between the current distribution part 81 and the power semiconductor device 2. The terminal part 39 may be a presspin body 39.

[0103] Interface portion 4H is located on the side of the current distribution part 81 that faces away from the power semiconductor devices 2, 25. The surface structure 41 may be formed by a surface of the current distribution part 81 or by a surface of the terminal part 39.

[0104] The surface structure at the interface portion 4H may be formed by a surface of the current distribution part 81 or by an adj oining component. For example, the adj oining component is the spring terminal structure 70 or the columnar metal portion 5.

[0105] By means of the current distribution part 81, neighboured terminals 31, 32 may take over current in the case of an electrical short circuit of one of the power semiconductor devices 2, 25. Further, the heat dissipation may be improved has the heat may additionally flow through neighboured terminals.

[0106] The embodiment of Figure 5 substantially corresponds to the embodiment of Figure 4.

[0107] In the exemplary embodiment of Figure 5, the current distribution part 81 and the terminal parts 39 may be formed as a common terminal structure with an integral current distribution part 81. The interface portion with the surface structure 41 may be located at one or more positions described in connection with the previous figures.

[0108] The current distribution part 81 and the terminal part 39 may comprise the same material or different materials. Further, the columnar metal portion 5 and the current distribution part 81 may comprise the same material or different materials

[0109] The shape of the current distribution part 81 may be varied in wide ranges. For example, the current distribution part may comprise rods or cables in addition to, or instead of, a plate-like structure. If there are more than two terminal structures 3, the current distribution part 81 may consist of several parts, which interconnect a part of the multiple terminal structures 3.

[0110] Figure 6 illustrates an embodiment of a method of producing a power semiconductor module. For the sake of better understanding, the described structural features are provided with the same reference signs as in the previous figures even if the structural features and the associated reference signs are not explicitly depicted in Figure 6.

[0111] In a step SI a power semiconductor device is provided. For example, one or more power semiconductor devices are provided laterally side-by-side on a base plate 61, as described in connection with Figures 2A and 2B.

[0112] In a step S2 a surface structure 41 with a plurality of slices 45 is provided wherein the slices 45 extend obliquely or vertically with respect to a base portion 46 directly adjoining the slices 45. In particular, the surface structure 41 can be produced by a skiving process.

[0113] In a step S3 a terminal structure 3 is electrically connected to the power semiconductor device 2, wherein the terminal structure 3 comprises an interface portion 4 with the surface structure 41 as an elastic portion 35 of the terminal structure.

[0114] During production with skiving process, the plurality of slices 45 may undergo a plastic deformation.

[0115] As illustrated in Figures 7A and 7B, an elastic deformation may result in slices 45 that directly adjoin each other in regions while making contact. As described in connection with the previous embodiments, the adjoining component 35 may be a component of the terminal structure 3 or another component of the power semiconductor module 1 such as the power semiconductor device 2 or a preform 21 arranged between the power semiconductor device 2 and the terminal structure 3.

[0116] The method described is suitable for the production of power semiconductor modules 1 with any kind of press contact, wherein a good electrical and / or thermal contact may be obtained between contact partners in a reliable and cost-effective manner. In particular, the surface structure is suited to replace an elastic or spring structure partially or completely.

[0117] While the disclosure is amendable to various modifications and alternative forms, specifics thereof have been shown by way of example in the figures and will be described in detail. It should be understood, however, that the intention is not to limit the disclosure to the particular embodiments described. On the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the scope of the disclosure defined by the appended claims.

[0118] The embodiments shown in the Figures 1A to 7B as stated represent exemplary embodiments of the power semiconductor module and the method; therefore, they do not constitute a complete list of all embodiments according to the described power semiconductor module and the method. Actual power semiconductor modules and methods may vary from the embodiments shown in terms of spatial arrangements, components, and materials for example. Reference Signs

[0119] 1 power semiconductor module

[0120] 2 power semiconductor device

[0121] 21 preform

[0122] 25 further power semiconductor device

[0123] 3 terminal structure

[0124] 31 terminal of terminal structure

[0125] 32 further terminal of terminal structure

[0126] 35 elastic portion

[0127] 38 top plate

[0128] 39 terminal part

[0129] 4 interface portion

[0130] 4A, 4B, 4C, 4D, 4E, 4F, 4G, 4H interface portion 41 surface structure

[0131] 42 further surface structure

[0132] 45 slice

[0133] 46 base portion

[0134] 5 columnar metal portion

[0135] 61 base plate

[0136] 70 spring terminal structure

[0137] 71 presspin body

[0138] 72 bracket

[0139] 73 lower spacer

[0140] 74 lower washer

[0141] 75 spring

[0142] 76 upper washer

[0143] 77 upper spacer

[0144] 81 current distribution part

[0145] 85 adjoining component

[0146] 99 detail

Claims

1. Claims1. A power semiconductor module (1) comprising a power semiconductor device (2) and a terminal structure ( 3) electrically connected to the power semiconductor device (2), wherein3.- the terminal structure (3 ) comprises an interface portion (4) with a surface structure (41) with a plurality of slices (45); and4.- the surface structure (41) forms an elastic portion (35) of the terminal structure (3 ).

2. The power semiconductor module according to claim 1, wherein the plurality of slices (45) extends obliquely or vertically with respect to the interface portion (4 ).

3. The power semiconductor module according to claim 1 or 2, wherein at least two of the slices (45) directly adjoin each other.

4. The power semiconductor module according to any one of the preceding claims,8.wherein the plurality of slices (45) is formed in one piece with a base portion (46) adjoining the plurality of slices (45).

5. The power semiconductor module according to claim 4, wherein a distance (d) between adj acent slices (45) next to the base portion (46) is in a range from 50 µm to 1 mm.

6. The power semiconductor module according to any one of the preceding claims,11.wherein a height of the slices (45) in a direction perpendicular to the interface portion (4) is in a range from 0. 5 mm to 5 mm.

7. The power semiconductor module according to any one of the preceding claims,13.wherein the terminal structure (3 ) comprises a columnar metal portion (5), wherein the surface structure (41) is formed on an end of the columnar metal portion (5).

8. The power semiconductor module according to claim 7, wherein the columnar metal portion (5) comprises a further surface structure (42) on an opposite end of the columnar metal portion (5).

9. The power semiconductor module according to any one of the preceding claims,16.wherein the terminal structure comprises a spring terminal structure (70).

10. The power semiconductor module according to claim 9, wherein the interface portion (4) is located between two components of the spring terminal structure (70) or directly adjoins a component of the spring terminal structure (70).

11. The power semiconductor module according to any one of the preceding claims,19.wherein the power semiconductor module (1) comprises a further power semiconductor device (25), wherein a terminal (31) of the terminal structure (3 ) is electrically connected to the power semiconductor device (2) and a further terminal (32) of the terminal structure (3 ) is electrically connected to the further power semiconductor device (25).

12. The power semiconductor module according to claim 11, wherein the terminal (31) of the terminal structure (3 ) and the further terminal (32) of the terminal structure (3 ) are electrically connected to one another via a current distribution part (81).

13. The power semiconductor module according to claim 12, wherein the surface structure (i) is formed by the current distribution part (81) or (ii) directly adjoins the current distribution part (81).

14. A method of producing a power semiconductor module (1), comprising the steps of:22.a) providing a power semiconductor device (2);23.b) providing a surface structure (41) with a plurality of slices (45 );24.c) electrically connecting a terminal structure (3 ) to the power semiconductor device (2), wherein the terminal structure (3 ) comprises an interface portion (4) with the surface structure (41) as an elastic portion (35) of the terminal structure (3 ).

15. The method according to claim 13,26.wherein the surface structure (41) provided in step b) is produced by skiving and wherein the plurality of slices (45) extends obliquely or vertically with respect to a base portion (46 ).

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