Substrate processing method, substrate processing apparatus, program, and computer storage medium

Abstract

Provided is a substrate processing method for removing, in a substrate processing apparatus, a peripheral portion of a first substrate in a stacked substrate in which the first substrate and a second substrate are bonded. The substrate processing apparatus comprises: a substrate holding unit that holds the stacked substrate; a motor that rotates the substrate holding unit; a contact member; a holding member that holds the contact member; and a horizontal movement mechanism configured to be capable of moving the holding member in a horizontal direction with respect to the substrate holding unit. The substrate processing method comprises: bringing the contact member into contact with a contact target portion of the stacked substrate held by the substrate holding unit, by moving the holding member; rotating the substrate holding unit by a first rotation amount while controlling the contact member under a first control condition in a state where the contact member is in contact with the contact target portion; and rotating the substrate holding unit by a second rotation amount while controlling the contact member under a second control condition different from the first control condition. The total sum of rotation amounts including the first rotation amount and the second rotation amount is larger than one rotation.

Description

Substrate Processing Method, Substrate Processing Apparatus, Program, and Computer Storage Medium

[0001] The present disclosure relates to a substrate processing method, a substrate processing apparatus, a program, and a computer storage medium.

[0002] Each of Patent Documents 1 to 3 discloses a substrate processing system that processes a polymerized substrate in which a first substrate and a second substrate are joined. The substrate processing system has a peripheral edge removing device that removes the peripheral edge portion of the first substrate.

[0003] Japanese Patent No. 7108710, Japanese Patent No. 7241868, Japanese Patent No. 7398554

[0004] The technology according to the present disclosure appropriately removes the peripheral edge portion of the first substrate in a polymerized substrate in which the first substrate and the second substrate are joined.

[0005] One aspect of the present disclosure is a substrate processing method for removing a peripheral edge portion of a first substrate in a polymerized substrate in which a first substrate and a second substrate are joined in a substrate processing apparatus. The substrate processing apparatus includes a substrate holding unit that holds the polymerized substrate, a motor that rotates the substrate holding unit, a contact member, a holding member that holds the contact member, and a horizontal movement mechanism configured to be able to move the holding member in a horizontal direction with respect to the substrate holding unit. The substrate processing method includes bringing the contact member into contact with a contact target portion of the polymerized substrate held by the substrate holding unit by moving the holding member, rotating the substrate holding unit by a first rotation amount while controlling the contact member under a first control condition in a state where the contact member is in contact with the contact target portion, and rotating the substrate holding unit by a second rotation amount while controlling the contact member under a second control condition different from the first control condition. The sum of the rotation amounts including the first rotation amount and the second rotation amount is greater than one rotation.

[0006] According to the present disclosure, in a polymerized substrate in which a first substrate and a second substrate are joined, the peripheral edge portion of the first substrate can be appropriately removed.

[0007] This is an explanatory diagram showing a schematic example of the configuration of a polymerized wafer to be processed. This is an explanatory diagram showing a schematic example of the configuration of a separation base point of a polymerized wafer. This is an explanatory diagram showing a schematic example of the configuration of a separation base point of a polymerized wafer. This is an explanatory diagram showing a schematic example of the configuration of a separation base point of a polymerized wafer. This is an explanatory diagram showing a schematic example of the configuration of a separation base point of a polymerized wafer. This is a side view showing a schematic example of the configuration of a peripheral removal device. This is a plan view showing a schematic example of the configuration of a peripheral removal device. This is a partially enlarged side view showing details of a peripheral removal section configuration example and one state example. This is a partially enlarged side view showing another state example of the peripheral removal section. This is an explanatory diagram showing an example of measured pressure values ​​in a time series. This is a partially enlarged side view showing another state example of the peripheral removal section. This is an explanatory diagram showing an example of measured pressure values ​​in a time series. This is a partially enlarged side view showing another state example of the peripheral removal section. This is a flowchart showing the main process of edge trimming according to the first embodiment. This is a flowchart showing the main process of edge trimming according to the second embodiment. This is a flowchart showing a subprocess of edge trimming according to the second embodiment. This is a flowchart showing the main process of edge trimming according to the third embodiment. This is an explanatory diagram showing the main control conditions of edge trimming according to the fourth embodiment. This is an explanatory diagram showing the main control conditions for edge trimming according to the fifth embodiment. This is an explanatory diagram showing the main control conditions for edge trimming according to the sixth embodiment. This is a schematic side view showing an example of a peripheral removal device configuration having an inspection device and a separation detection device. This is an explanatory diagram showing the main control conditions for edge trimming according to the seventh embodiment. This is an explanatory diagram showing the main control conditions for edge trimming according to the eighth embodiment.

[0008] Hereinafter, the edge removal device 1 as a substrate processing apparatus and the edge trimming method as a substrate processing method according to this embodiment will be described with reference to the drawings. In this specification and drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant explanations will be omitted.

[0009] In the peripheral removal apparatus 1 described later according to this embodiment, processing is performed on a polymerized wafer T, which is a polymerized substrate, formed by joining a first wafer W as a first substrate and a second wafer S as a second substrate, as shown in Figure 1. Hereinafter, in the first wafer W, the side that is joined to the second wafer S will be called the surface Wa, and the side opposite to the surface Wa will be called the back surface Wb. Similarly, in the second wafer S, the side that is joined to the first wafer W will be called the surface Sa, and the side opposite to the surface Sa will be called the back surface Sb.

[0010] The first wafer W is a semiconductor wafer such as a silicon substrate, and at least one film is formed on the surface Wa side by lamination. Hereinafter, the film formed on this surface Wa side will be referred to as the "laminated film". In this embodiment, the laminated film includes a device layer Dw and a bonding film Fw. The device layer Dw includes a plurality of devices. The bonding film Fw includes, for example, an oxide film (THOX film, SiO ２ A film (TEOS film), SiC film, SiCN film, or adhesive is used. The first wafer W is then bonded to the second wafer S via a bonding film Fw. The peripheral edge We of the first wafer W is chamfered, and the cross-section of the peripheral edge We decreases in thickness towards its tip. In the following description, the region radially inward from the peripheral edge We to be removed on the first wafer W may be referred to as the central portion Wc.

[0011] The second wafer S has a configuration similar to that of the first wafer W, for example. That is, a device layer Ds and a bonding film Fs are formed as a laminated film on the surface Sa side, and the peripheral edge is chamfered. Note that the second wafer S does not have to be a device wafer on which the device layer Ds is formed; for example, it may be a support wafer that supports the first wafer W. In this case, the second wafer S functions as a protective material that protects the device layer Dw of the first wafer W.

[0012] In Figure 1, an example is shown where a device layer and a bonding film are formed as a laminated film on the surfaces of the first wafer W and the second wafer S. However, the type and number of layers of the laminated film are not limited to this.

[0013] Furthermore, separation points between the first wafer W and the second wafer S are formed on the polymerized wafer T by, for example, a laser irradiation device (not shown). The separation points are not particularly limited, as long as they can appropriately separate the desired portions of the first wafer W and the second wafer S.

[0014] In one embodiment, the separation point includes a peripheral modification region N, as shown in Figure 2, which comprises a peripheral modification layer M formed along the boundary between the peripheral portion We and the central portion Wc of the first wafer W, and a crack C extending from the peripheral modification layer M. The boundary between the peripheral portion We and the central portion Wc is, for example, a boundary extending in the thickness direction of the first wafer W. In one embodiment, the peripheral modification layer M is formed by irradiating the inside of the first wafer W with laser light (for example, a fiber laser or a YAG laser) in a laser irradiation device (not shown). The peripheral modification region N in this case is not limited to this, but as shown in the example in Figure 2, it is formed near the outer edge of the bonding region where the bonding films Fw and Fs of the first wafer W and the second wafer S are bonded.

[0015] As shown in Figure 3, a separation base point according to one embodiment includes a peripheral modification region N and a bonding force reduction region R formed at the interface between the first wafer W and the second wafer. The bonding force reduction region R is formed in an annular shape in plan view with a width that allows for the appropriate removal of the peripheral portion We of the first wafer W. The bonding force reduction region R according to one embodiment is formed by irradiating the interface between the first wafer W and the second wafer S with laser light (e.g., CO2) in a laser irradiation apparatus (not shown). ２ It is formed by irradiation with a laser. In the description of the peripheral removal section 12 or edge trim in the peripheral removal apparatus 1 described later, for convenience, an example in which the polymerized wafer T is configured as shown in Figure 3 will be described.

[0016] As shown in Figure 4, a separation point according to one embodiment includes a first peripheral modification region N1 which comprises a first peripheral modification layer M1 formed along the boundary between the peripheral portion We and the central portion Wc of the first wafer W, and a first crack C1 extending from the first peripheral modification layer M1. The separation point also includes a second peripheral modification region N2 which comprises a second peripheral modification layer M2 formed extending linearly horizontally radially outward from the lower end of the first peripheral modification region N1, and a second crack C2 extending from the second peripheral modification layer M2. In the illustrated example, the second crack C2 of the second peripheral modification region N2 is connected to the first peripheral modification layer M1 at the lower end.

[0017] In one embodiment, as shown in Figure 5, a peripheral modification layer M1 and a segmented modification layer M3 are formed inside the first wafer W. The peripheral modification layer M1 is the same as the peripheral modification layers M, M1, and M2 described in Figures 2 to 4. Multiple segmented modification layers M3 can be formed around the entire circumference of the peripheral portion We of the first wafer W. The region between one segmented modification layer M3 and another adjacent segmented modification layer M3 is called a segmented region R. The segmented modification layers M3 allow the peripheral portion We to be removed to be broken down into smaller pieces according to the segmented region R.

[0018] As shown in Figures 6 and 7, the edge removal apparatus 1 according to this embodiment has a chuck 10 as a substrate holding part that holds the polymerized wafer T on its upper surface. The chuck 10 adsorbs and holds the back surface Sb of the second wafer S when the first wafer W is positioned on the upper side and the second wafer S is positioned on the lower side. The chuck 10 is supported by a rotating mechanism 11. The rotating mechanism 11 incorporates, for example, a motor as a drive source. The chuck 10 is configured to be rotatable around a vertical axis by the rotating mechanism 11. In one embodiment, the rotating mechanism 11 is configured to rotate the chuck 10 at a desired rotational speed.

[0019] A peripheral edge removal section 12 is provided on the side of the chuck 10. As shown in Figure 8, the peripheral edge removal section 12 according to this embodiment includes a blade 20 as a contact member, a blade holding member 21 as a holding member for holding the blade 20, a horizontal movement mechanism 24 comprising a rail 22 and a motor 23 configured to allow the blade holding member 21 to move horizontally, a horizontal base 25 for holding the horizontal movement mechanism 24, a horizontal base holding section 30 for holding the horizontal base 25, a vertical movement mechanism 33 comprising a rail 31 and a motor 32 configured to allow the horizontal base holding section 30 to move vertically, and a vertical base 34 for holding the vertical movement mechanism 33.

[0020] The blade 20 has, for example, a wedge shape. The configuration of the contact member in this disclosure is not limited to the example of the blade 20 shown. For example, an annular roller with an acute angle on its outer circumference may be used as the contact member. The blade 20 is moved horizontally and vertically together with the blade holding member 21 by the horizontal movement mechanism 24 and the vertical movement mechanism 33. For example, the blade 20 is moved horizontally between the position shown in Figure 8 and the position shown in Figure 9. As the blade 20 moves, the blade 20 comes into contact with or is inserted into the interface between the first wafer W and the second wafer S or the lower part of the bevel of the first wafer W. In the following description, "contact" means contact or insertion. The interface between the first wafer W and the second wafer S or the lower part of the bevel of the first wafer W that the blade 20 contacts may be referred to as the "contact target area". The contact of the blade 20 with the contact target area applies pressure in the direction shown by the white arrow in Figure 9, for example. In this state, the chuck 10 is rotated by the rotation mechanism 11, thereby applying the pressure to the entire circumference of the polymerized wafer T. As a result, as shown in Figure 10, the peripheral portion We of the first wafer W separates around the entire circumference of the polymerized wafer T.

[0021] The horizontal movement mechanism 24 and the vertical movement mechanism 33 are used to move the blade 20 horizontally or vertically by a desired amount of movement, respectively. In the horizontal movement mechanism 24, the blade holding member 21 is moved horizontally on the rail 22 by the driving force of the motor 23. As the blade holding member 21 moves, the blade 20 also moves horizontally. In the vertical movement mechanism 33, the horizontal base holding part 30 is moved vertically on the rail 31 by the driving force of the motor 32, and the horizontal base 25 held by the horizontal base holding part 30 is also moved vertically. As the horizontal base 25 moves vertically, the blade 20 also moves vertically. Hereinafter, for example, as viewed from the standby position of the blade 20 shown in Figure 8, the amount of horizontal movement of the blade 20 moved by the horizontal movement mechanism 24 will be referred to as the "horizontal movement amount," and the amount of vertical movement of the blade 20 moved by the vertical movement mechanism 33 will be referred to as the "vertical movement amount." However, the positive direction for horizontal movement is defined as the direction from the peripheral edge We of the first wafer W toward the central part Wc. The positive direction for vertical movement is defined as the direction vertically upward. In the following description, indirectly moving the blade 20 horizontally or vertically using the horizontal movement mechanism 24 and the vertical movement mechanism 33 may be simply referred to as "moving the blade 20".

[0022] In one embodiment, the peripheral removal device 1 includes an oscillator 40 as an oscillating unit that applies vibration (ultrasonic vibration) to the blade 20. The oscillator 40 is provided, for example, inside the blade holding member 21 and connected to the blade 20. The oscillator 40 is configured to control the on / off state of vibration on the blade 20 and the ultrasonic output. A large ultrasonic output includes cases where the amplitude of the ultrasonic vibration is large or the vibration frequency is large. By vibrating the blade 20, the peripheral portion We can be separated with a smaller insertion amount compared to the case where it is not vibrated, and the pressure applied to the contact target of the blade 20 can be reduced. This can suppress the occurrence of cracks in unintended locations on the contact target and can also suppress the remaining peripheral portion We that is not removed. The horizontal movement mechanism 24 may have an elastic body such as a spring to absorb rotational wobble of the polymerized wafer T due to eccentricity of the chuck 10 and the polymerized wafer T.

[0023] In one embodiment, the edge removal device 1 includes a pressure sensor 50 configured to measure at least horizontal pressure (load) on the blade 20. As for horizontal pressure, for example, as shown in Figure 9, when the blade 20 is moved in the direction of the solid arrow while in contact with the contact target, a reaction pressure is generated on the blade 20 in the direction of the dashed-dotted arrow opposite to the direction of movement. The pressure value measured by the pressure sensor 50 (hereinafter referred to as the "measured pressure value") is output to the control unit 100.

[0024] The measured pressure value is obtained, for example, as shown in Figure 11. Figure 11 shows the pressure fluctuation when the blade 20 is moved from the position shown in Figure 8 to the position shown in Figure 9, and then the peripheral portion We separates as shown in Figure 10. In Figure 11, (a) to (c) indicate the position of the blade 20 and the state of the peripheral portion We, respectively, as shown in Figures 8 to 10. As shown in Figure 11, the measured pressure value is 0 when the blade 20 is not in contact with the contact target (Figure 11(a)). From this state, when the blade 20 is moved horizontally and the blade 20 comes into contact with the contact target, the measured pressure value gradually increases and stabilizes when the horizontal movement stops (Figure 11(b)). Subsequently, when the peripheral portion We separates, the measured pressure value decreases sharply and approaches 0 (Figure 11(c)).

[0025] In one embodiment, as shown in Figure 12, the blade 20 is brought into contact with the lower bevel of the first wafer W. In this case, when the blade 20 is moved in the horizontal or vertical direction indicated by the solid arrow, a reaction force may be generated on the blade 20 in contact with the curved lower bevel in a direction other than horizontal, for example, in the direction indicated by the dashed-dotted arrow. Even in this case, the pressure sensor 50 can measure the horizontal component of the reaction force. In one embodiment, the pressure sensor 50 is configured to measure vertical pressure. In this case, even when a reaction force is generated in the direction indicated by the dashed-dotted arrow in Figure 12, the reaction force can be measured more accurately.

[0026] In one embodiment, when ultrasonic vibration is applied to the blade 20, the pressure at which the blade 20 contacts the contact target fluctuates periodically, and therefore the pressure value measured by the pressure sensor 50 also fluctuates periodically. In this case, the pressure can be determined by removing the periodically fluctuating frequency components using known means.

[0027] In one embodiment, as shown in Figures 6 and 7, the peripheral removal device 1 includes an alignment detection mechanism 60 as a detection mechanism for detecting the position of the peripheral modification region N formed on the outer periphery or inside of the polymerized wafer T (first wafer W) held in the chuck 10.

[0028] The alignment detection mechanism 60 is provided, for example, above the chuck 10 and detects, for example, the outer peripheral position of the polymerized wafer T (first wafer W, second wafer S) around its entire circumference. The detected outer peripheral position is output to the control unit 100. The control unit 100 determines the eccentricity between the center position of the polymerized wafer T calculated from the outer peripheral position and the rotation center of the chuck 10. In one embodiment, the alignment detection mechanism 60 detects the formation position (distance from the outer peripheral position) of the peripheral modification region N. The detected formation position of the peripheral modification region N is output to the control unit 100. As the alignment detection mechanism 60, for example, a non-contact laser displacement meter, a CCD camera, or an IR camera can be used.

[0029] The edge removal device 1 described above is provided with at least one control unit 100, as shown in Figures 6 and 7. The control unit 100 processes computer-executable instructions that cause the edge removal device 1 to perform the various processes described herein. The control unit 100 may be configured to control each element of the edge removal device 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 100 may be included in the edge removal device 1. The control unit 100 is implemented, for example, by a computer. The control unit 100 may be one or more circuits, and may be provided as a single unit or in parts. The control unit 100 may include a processing unit, a storage unit and a communication interface. The functions realized by the processing units described in this disclosure may be implemented in circuits or processing circuits, including general-purpose processors, application-specific processors, integrated circuits, ASICs (Application Specific Integrated Circuits), CPUs (Central Processing Units), conventional circuits, and / or combinations thereof, which are programmed to realize the functions described. A processor is considered to be a circuit or processing circuit that includes transistors and other circuits. A processor may be a programmed processor that executes a program stored in memory. This program (computer program product) may be stored in memory beforehand and may be retrieved via a medium H when needed. The medium H may be various computer-readable storage media, such as a memory card, optical disc, or removable storage media like an HDD (Hard Disk Drive), and the program may be provided in a form stored on such storage media. Alternatively, the medium H may be a communication line connected to a communication interface, and the program may be distributed by a remote server device or the like. The acquired program is stored in the storage unit and read from the storage unit and executed by the processing unit.The memory unit may include storage media such as RAM (Random Access Memory), ROM (Read Only Memory), EEPROM (Electronically Erasable Programmable Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or combinations thereof. The communication interface may communicate with the edge removal device 1 via a communication line such as a LAN (Local Area Network). In this disclosure, circuits, units, and means are hardware programmed to perform or execute the functions described. Such hardware may be any hardware described in this disclosure, or any hardware known to be programmed to perform or execute the functions described. If the hardware is a processor that is considered to be a type of circuit, then the circuit, means, or unit is a combination of hardware and software used to constitute the hardware and / or processor.

[0030] Next, wafer processing performed using the peripheral removal apparatus 1 configured as described above will be explained. In the wafer processing according to each of the following embodiments, edge trimming is performed to remove the peripheral portion We of the first wafer W. Note that the wafer processing according to each of the following embodiments is performed by, for example, the control unit 100. In addition, in each of the following embodiments, the first wafer W and the second wafer S are bonded together to form a polymerized wafer T in advance. Separation base points are also formed in advance on the polymerized wafer T.

[0031] (First Embodiment) The edge trim MT1 according to the first embodiment will be described below.

[0032] First, the polymerized wafer T to be subjected to edge trimming MT1 is set up in the peripheral removal apparatus 1 (St101 in Figure 13). The setup of St101 according to this embodiment includes the following steps. First, the polymerized wafer T is placed on the chuck 10 of the peripheral removal apparatus 1. Next, the alignment detection mechanism 60 detects the outer peripheral position of the polymerized wafer T, and the control unit 100 determines the eccentricity between the center position of the polymerized wafer T calculated from the outer peripheral position of the polymerized wafer T and the rotation center of the chuck 10. In one embodiment, the alignment detection mechanism 60 detects the formation position of the peripheral modification region N. Next, based on the determined or detected eccentricity or the formation position of the peripheral modification region N, the correction amount for the relative horizontal movement of the blade 20 with respect to the polymerized wafer T is determined. Specifically, when determining the correction amount based on the eccentricity of the polymerized wafer T, the correction amount is determined to correct the horizontal movement of the blade 20 so that it follows the outer peripheral position of the polymerized wafer T (first wafer W). Furthermore, when determining the correction amount based on the formation position of the peripheral modification region N, the correction amount is determined so as to correct the horizontal movement amount so that the distance between the formation position and the blade 20 becomes a desired distance. The determination of the correction amount is performed, for example, by the control unit 100.

[0033] Next, the blade 20 is moved to contact the contact target portion of the polymerized wafer T (St102 in Figure 13). At this time, the contact target portion to which the blade 20 is contacted is called the "initial position," and the control conditions of the blade 20 are called the "initial conditions." The initial position and initial conditions are not particularly limited, but may be preferred conditions from the viewpoint of proceeding with the process by sequentially changing the following multiple control conditions. For example, when ultrasonic vibration is applied to the blade 20 under the following multiple control conditions, the ultrasonic vibration may be turned off under the initial conditions. Note that St102 may be the same as St202 in the edge trim MT2 of the second embodiment described later.

[0034] Next, while controlling the blade 20 under the first control condition, the rotation mechanism 11 starts rotating the chuck 10 (St103 in Figure 13).

[0035] In one embodiment, the first control condition includes control of a predetermined horizontal movement amount, which will be described later. When the above-mentioned correction amount is taken into consideration, the first control condition includes control of a predetermined horizontal movement amount corrected by the correction amount. In another embodiment, the first control condition includes control of a predetermined vertical movement amount, which will be described later. In yet another embodiment, the first control condition includes control of a predetermined ultrasonic output in the oscillator 40, which will be described later. In the following description, controlling the horizontal or vertical movement amount of the blade 20 using the horizontal movement mechanism 24 or the vertical movement mechanism 33, or controlling the ultrasonic output related to the vibration of the blade 20 using the oscillator 40, may be simply referred to as "controlling the blade 20".

[0036] The first control condition is predetermined as such that, under the first control condition, when the blade 20 is brought into contact with the target portion of the polymerized wafer T and the polymerized wafer T is rotated once, it is predicted that the peripheral portion We will not separate. Note that "it is predicted that the peripheral portion We will not separate" includes cases in actual processing where separation occurs partially or probabilistically due to the effects of eccentricity, etc. Furthermore, the prediction may be made from empirically accumulated data regarding the conditions at the time of contact of the blade 20 and the presence or absence of separation. Alternatively, the prediction may be made by experiment or simulation. Furthermore, when determining the first control condition from the prediction result, the amount of horizontal movement in the positive direction from the peripheral portion We to the central portion Wc of the first wafer W, the amount of insertion from the peripheral portion We if the blade 20 is inserted into the peripheral portion We, or the distance of the blade 20 to the peripheral modification region N may be considered.

[0037] Next, with the blade 20 in contact under the first control condition, the polymerized wafer T is rotated by a predetermined first amount of rotation (St104 in Figure 13). In this specification, "amount of rotation" means the angle of rotation with respect to the center of rotation. The first amount of rotation may be less than one rotation, for example, half a rotation (180-degree rotation in a plan view). Alternatively, the first amount of rotation may be one rotation or more, for example, three rotations (1080-degree rotation in a plan view).

[0038] Next, the control conditions of the blade 20 are changed to the second control conditions (St105 in FIG. 13). When the first control conditions include a horizontal movement amount, the second control conditions include a horizontal movement amount that is larger in the positive direction than the horizontal movement amount. Further, when the first control conditions include a vertical movement amount, the second control conditions include a vertical movement amount that is larger in the positive direction than the vertical movement amount. Further, when the first control conditions include an ultrasonic output, the second control conditions include an ultrasonic output that is larger than the ultrasonic output.

[0039] Next, while the blade 20 is in contact under the second control conditions, the polymerization wafer T is rotated by a predetermined second rotation amount (St106 in FIG. 13). The second rotation amount may be less than one rotation, for example, half a rotation (180-degree rotation in plan view). Further, the second rotation amount may be one rotation or more, for example, three rotations (1080-degree rotation in plan view).

[0040] The second control conditions according to the present embodiment are determined in advance as control conditions such that when the blade 20 is brought into contact with the contact target portion of the polymerization wafer T under the second control conditions after the treatment under the first control conditions and the polymerization wafer T is rotated by the second rotation amount described later, the peripheral edge portion We is sufficiently separated.

[0041] In the edge trim MT1 according to the example shown in FIG. 13, the peripheral edge portion We is sufficiently separated by the treatment under the second control conditions. Therefore, after St106, it is assumed that the edge trim is completed, and the edge trim MT1 is terminated.

[0042] Here, the sum of the plurality of rotation amounts of the edge trim MT1 is set to be larger than one rotation. In the example shown in FIG. 13, the sum of the first rotation amount and the second rotation amount is set to be larger than one rotation. For example, when the first rotation amount is half a rotation, the second rotation amount is set to be more than half a rotation. At this time, the sum of the plurality of rotation amounts does not have to be an integer. That is, the position of the blade 20 at the end of the rotation does not have to be the initial position.

[0043] In the above example, the control conditions are two, namely the first control condition and the second control condition. However, the present invention is not limited to this, and there may be three or more control conditions. In this case, each control condition may be determined such that the peripheral edge We does not separate except for the last control condition, and the peripheral edge We separates sufficiently under the last control condition. Also, an example in which an infinite number of control conditions are provided and change substantially continuously is included in the technology of the present disclosure. For example, while the polymerization wafer T is rotated by a certain amount of rotation, the horizontal movement amount may be controlled so as to gradually increase in the positive direction. The same applies when the control condition includes the vertical movement amount or the ultrasonic output.

[0044] In one embodiment, the control condition includes the rotation speed of the chuck 10 in the rotation mechanism 11. In this case, the first control condition may include the first rotation speed, and the second control condition may include the second rotation speed different from the first rotation speed. The second rotation speed may be greater than or less than the first rotation speed. For example, when the first control condition and the second control condition include the horizontal movement amount or the vertical movement amount, the second rotation speed may be greater than the first rotation speed. By changing the rotation speed, a greater stress is applied to the contact target portion per unit time, and separation of the peripheral edge We of the first wafer W is promoted by the contact under the second control condition. Also, for example, when the first control condition and the second control condition include the ultrasonic output, the second rotation speed may be less than the first rotation speed. Thereby, a greater stress is applied to the contact target portion per unit time, and separation of the peripheral edge We of the first wafer W is promoted by the contact under the second control condition.

[0045] Hereinafter, the significance of the edge trim MT1 according to the first embodiment will be described. The inventors have intensively studied and found the following. That is, in an edge trimming method of a certain comparative example, when the control conditions of the blade 20 were determined so as to complete the edge trimming in one rotation from the initial position, there was a case where a flaw occurred in a part of the bottom wafer (second wafer S) that was not a removal target.

[0046] In contrast to the problems in the above comparative example, the edge trim MT1 according to the first embodiment can suppress the occurrence of defects on the second wafer S and the like. This is because the first control condition is a gentle condition such that the peripheral portion We does not separate when the polymerized wafer T is processed for one rotation under the first control condition. By changing the control condition in multiple stages from such a gentle condition, the crack can be gradually extended, and sufficient stress necessary for separation can be applied to the peripheral portion We. As a result, it is possible to suppress the scattering of the separated peripheral portion We at a high speed, or to suppress the occurrence of defects caused by the tip of the blade 20 being repelled and coming into contact with a part of the second wafer S when the pressure is released all at once.

[0047] (Second Embodiment) The edge trim MT2 according to the second embodiment will be described below.

[0048] First, the polymerized wafer T to be edge-trimmed is set up in the peripheral removal device 1 (St201 in Figure 14). The setup of St201 according to this embodiment is the same as that of St101 in the edge trimming method Mt1 according to the first embodiment. At this time, the alignment detection mechanism 60 acquires the outer peripheral position of the contact target portion of the polymerized wafer T.

[0049] Next, the blade 20 is moved to contact the contact target portion of the polymerized wafer T (St202 in Figure 14). Specifically, St202 in this embodiment is performed as a subprocess as shown in Figure 15. First, the blade 20 is moved to near the outer periphery position of the contact target portion acquired in St201 (St251 in Figure 15). When it reaches near the outer periphery position, the speed of horizontal movement is reduced. At St251, the blade 20 is not in contact with the contact target portion. Next, the amount of horizontal movement is gradually increased in the positive direction. During this time, the measured pressure value of the pressure sensor 50 is monitored (St252 in Figure 15). Next, it is determined whether the pressure has exceeded a threshold (St253 in Figure 15). If the pressure does not exceed the threshold, the amount of horizontal movement is continued to increase (returning to St252). If the pressure exceeds the threshold, it is determined that the blade 20 has contacted the contact target portion, and the process returns to the main process and proceeds to St203. The threshold can be, for example, a value greater than 0, which has been confirmed through experience, experiment, or simulation to indicate that the blade 20 is in sufficient contact with the target object.

[0050] Next, the polymerized wafer T is rotated while the blade 20 is moved or vibrated under desired control conditions to separate the peripheral portion We (St203 in Figure 14). St203 in this embodiment is not particularly limited, but may be performed by, for example, a known removal method, or by performing the same steps as St103 to St106 in the first embodiment, or the same steps as St303 and St304 in the third embodiment described later.

[0051] The significance of edge trim MT2 according to the second embodiment will be explained below. The inventors have conducted diligent studies and found the following. First, in a polymerized wafer T, the first wafer W and the second wafer S are bonded with a radial misalignment, and in the initial position of the contact target, the second wafer S may protrude further outward (see misalignment amount G in Figure 8). In an edge trimming method of a certain comparative example, the alignment detection mechanism 60 is used to detect the outer peripheral position of the contact target of the polymerized wafer T with respect to the misaligned polymerized wafer T. The outer peripheral position detected by the alignment detection mechanism 60 is detected from above the polymerized wafer T (first wafer W) (see Figure 6). Therefore, the outer peripheral position of the second wafer S, which protrudes further outward (the dashed line on the right side of Figure 8), may be detected as the outer peripheral position of the polymerized wafer T. In this case, even if the blade 20 is moved horizontally by referring to the outer peripheral position, it may not reach the target contact target of the first wafer W, and contact may not be properly made. Furthermore, in cases other than those described above, for example, when detecting from the side of the first wafer W using a displacement sensor or image sensor, contact may not be properly made as a result of errors related to detection in the alignment detection mechanism 60 or errors related to movement in the horizontal movement mechanism 24 and the vertical movement mechanism 33.

[0052] In response to the problems in the above comparative example, the edge trim MT2 according to the second embodiment allows for the determination of whether the blade 20 has made contact with the initial position of the contact target portion of the polymerized wafer T by referring to the measured pressure value. This ensures that the blade 20 makes proper contact with the initial position of the contact target portion. Furthermore, by making proper contact with the initial position of the blade 20, the subsequent processing for separating the peripheral portion We can be carried out appropriately.

[0053] In one embodiment, the subprocesses St251 to St253 of the edge trim MT2 according to the second embodiment can also be applied to processes other than edge trimming, for example, the complete separation (lift-off) of the first wafer W and the second wafer S in a polymerized wafer T. In lift-off, a separation base point is formed at the interface of the entire surface of the first wafer W and the second wafer S by laser processing or the like. During lift-off, the subprocesses St251 to St253 bring the blade 20 into contact with, for example, the interface of the first wafer W and the second wafer S. Furthermore, by moving the blade 20 by a desired amount of horizontal movement from the contact position, the separation of the first wafer W and the second wafer S is assisted. In this case, the subprocesses St251 to St253 ensure that the blade 20 is properly in contact with the initial position of the part to be contacted.

[0054] (Third Embodiment) The edge trim MT3 according to the third embodiment will be described below.

[0055] First, the polymerized wafer T to be edge-trimmed is set up in the peripheral removal apparatus 1 (St301 in Figure 16). The setup of St301 is the same as that of St101 in the edge trimming method Mt1 according to the first embodiment.

[0056] Next, under initial conditions, the blade 20 is brought into contact with the initial position of the contact target portion of the polymerized wafer T (St302 in Figure 16). St302 may be the same as St101 in the edge trim MT1 according to the first embodiment, or St202 in the edge trim MT2 according to the second embodiment.

[0057] Next, while controlling the blade 20 under variable control conditions, the rotation mechanism 11 starts rotating the chuck 10 (St303 in Figure 16).

[0058] In one embodiment, the variable control condition includes a variable horizontal displacement. When considering the correction amount related to the above-mentioned eccentricity, the variable control condition includes the variable horizontal displacement corrected by the correction amount. In another embodiment, the variable control condition includes a variable vertical displacement. In yet another embodiment, the variable control condition includes the variable ultrasonic output of the oscillator 40.

[0059] The variable horizontal movement, variable vertical movement, and variable ultrasonic output related to the variable control conditions are the horizontal movement, vertical movement, and ultrasonic output, respectively, which are determined variably by referring to the measured pressure value of the pressure sensor 50 when the blade 20 is in contact with the contact target.

[0060] For example, the variable control conditions are determined so that the pressure value falls within a desired threshold range. In one case, suppose the measured pressure value when the blade 20 is in contact with a target object is below the desired threshold range. In this case, if the variable control conditions include a variable horizontal movement amount, the variable horizontal movement amount is increased. This causes the blade 20 to make stronger contact with the target object or to be inserted deeper. That is, by increasing the variable horizontal movement amount, the pressure of the blade 20 on the target object increases, and the measured pressure value increases accordingly. Furthermore, the measurement of the measured pressure value is monitored while increasing the variable horizontal movement amount, and when the measured pressure value falls within the threshold range, the increase in the variable horizontal movement amount is stopped. This makes it possible to keep the pressure of the blade 20 on the target object within the desired range.

[0061] In another embodiment, if the variable control conditions include a variable vertical displacement or a variable ultrasonic output, the variable vertical displacement or variable ultrasonic output is increased until the measured pressure value falls within the threshold range. Similarly, if the measured pressure value exceeds a desired threshold range, the variable horizontal displacement, variable vertical displacement, or variable ultrasonic output is decreased until the measured pressure value falls within the threshold range.

[0062] Next, with the blade 20 in contact under variable control conditions, the polymerized wafer T is rotated by a predetermined amount of rotation (St304 in Figure 16). In one embodiment, the amount of rotation is predetermined as an amount that sufficiently separates the peripheral portion We when the processing is carried out with the blade 20 in contact at a pressure within the threshold range. In another embodiment, the amount of rotation is determined as a desired amount of rotation, for example, one rotation, taking into account the processing time. In this case, the threshold range is predetermined as the pressure range that sufficiently separates the peripheral portion We when the processing is carried out at that amount of rotation.

[0063] In St304, the peripheral portion We of the contact target may separate (see Figure 10) before reaching a predetermined amount of rotation. In this case, the pressure of the blade 20 on the contact target decreases sharply, and the measured pressure value also decreases sharply in response (see Figure 11). Furthermore, if the peripheral portion We of the contact target is not completely separated, the measured pressure value may increase or decrease erratically. Thus, if the variable control conditions are determined by referring to the measured pressure value when it changes sharply or increases or decreases erratically, it may actually hinder proper processing.

[0064] To address the above issues, in one embodiment, when the measured pressure value changes abruptly or increases or decreases erratically, the variable control conditions at the time immediately before the fluctuation in the measured pressure value occurs are maintained. In another embodiment, when the measured pressure value changes abruptly or increases or decreases erratically, the system returns to the initial conditions that take into account the correction amount related to eccentricity. In yet another embodiment, an upper limit of the horizontal movement amount is predetermined, and when the measured pressure value changes abruptly or increases or decreases erratically, the system stops increasing the horizontal movement amount when the horizontal movement amount reaches the upper limit. The same applies when the variable control conditions include a variable vertical movement amount or a variable ultrasonic output.

[0065] After the peripheral portion We of the contact target separates, the blade 20 will contact the contact target again as rotation continues. At this time, the measured pressure value will return from 0 to, for example, the level just before the fluctuation in the measured pressure value occurred. After that, the variable control conditions can be determined by referring to the measured pressure value again.

[0066] The following describes a modified example of the edge trim MT3 according to the third embodiment.

[0067] In a modified example of the edge trim MT3 according to the third embodiment, the variable control condition is a plurality of variable control conditions. For example, the variable control condition includes a first variable control condition determined by referring to a predetermined first threshold range for the measured pressure value of the pressure sensor 50, and a second variable control condition determined by referring to a predetermined second threshold range for the measured pressure value. The second threshold range may be a range of larger measured pressure values ​​that does not overlap with the first threshold range.

[0068] When edge trimming is performed using multiple variable control conditions, similar to St103 to St106 of edge trim MT1 according to the first embodiment, the polymerized wafer T is rotated by a predetermined first rotation amount while the blade 20 is in contact with it under the first variable control condition. Subsequently, the polymerized wafer T is rotated by a predetermined second rotation amount while the blade 20 is in contact with it under the second variable control condition.

[0069] The first threshold range is predetermined as a range of pressure values ​​such that, when the blade 20 is brought into contact with the target contact area of ​​the polymerized wafer T at a pressure within the first threshold range and the polymerized wafer T is rotated by a first amount of rotation, the peripheral portion We is not expected to separate. The second threshold range is predetermined as a range of pressure values ​​such that, when the blade 20 is brought into contact with the target contact area of ​​the polymerized wafer T at a pressure within the second threshold range and the polymerized wafer T is rotated by a second amount of rotation, the peripheral portion We is sufficiently separated.

[0070] The significance of edge trim MT3 according to the third embodiment will be explained below. The inventors have conducted diligent studies and found the following: As explained in edge trim MT2 according to the second embodiment above, in processing a polymerized wafer T in which a first wafer W and a second wafer S are bonded together with a misalignment between them, contact may not be properly made. In this case, in the edge trim method of the comparative example, if the blade 20 is brought into contact with the contact target area under constant control conditions and the polymerized wafer T is rotated, variations in the contact pressure of the blade 20 may occur at each circumferential position of the polymerized wafer T. As a result, excessively large stress may be generated on the peripheral edge We of the first wafer W, causing the peripheral edge We to scatter at a high speed, or the tip of the blade 20 to be repelled, which may cause damage to the second wafer S.

[0071] In contrast to the problems in the above comparative example, the edge trim MT3 according to the third embodiment allows the pressure of the blade 20 on the contact target portion during rotation of the polymerized wafer T to be within a desired threshold range. This ensures that the blade 20 makes proper contact with the contact target portion during rotation of the polymerized wafer T. As a result, the quality of the polymerized wafer T after edge trimming is improved, and the occurrence of defects in the second wafer S is suppressed.

[0072] Furthermore, according to the modified edge trim MT3 of the third embodiment described above, in addition to the above-mentioned effects and benefits, the same effects and benefits as those described for the edge trim MT1 of the first embodiment can be obtained.

[0073] The following describes embodiments of edge trimming in which different control conditions are set for each of three or more wraps, including the first wrap, second wrap, ... nth wrap (n≧3, the same applies hereafter). In the following embodiments, "wrap" refers to a control period defined as the time it takes for the chuck 10 to rotate once (360 degrees) by the rotating mechanism 11, and within the duration of each wrap, the blade 20 and the rotating mechanism 11 are controlled according to predetermined control conditions. Note that a wrap may also be defined as the time it takes to rotate at a rotation angle smaller or larger than one full rotation.

[0074] (Fourth Embodiment) The edge trim according to the fourth embodiment will be described below with reference to Figure 17. In this embodiment, the control conditions for each of the three or more laps, including the first lap, the second lap, ... the nth lap, are set so that the amount of horizontal movement of the blade 20 increases in stages. In this embodiment, throughout the first to nth laps, ultrasonic vibration is applied with a predetermined ultrasonic output, the blade 20 is moved horizontally at a predetermined insertion speed, and the chuck 10 is rotated by the rotation mechanism 11 at a predetermined rotation speed. The ultrasonic output of the blade 20, the insertion speed, and the rotation speed of the chuck 10 may be constant throughout the first to nth laps.

[0075] As shown in Figure 17, in the first lap, the horizontal position of the blade 20 is set to 0, that is, the position where the tip of the blade 20 is in contact with the peripheral edge We of the wafer W. In one embodiment, ultrasonic vibrations having an amplitude in the direction of the blade 20's movement are applied to the blade 20. In this case, in the first lap, the horizontal position of the blade 20 is set to the position where the tip of the vibrating blade 20 at a certain vibration period is in contact with the peripheral edge We of the wafer W. In the second lap, the blade 20 is moved horizontally by a predetermined amount of horizontal movement (+x) toward the central part Wc from the horizontal position (0) at the end of the first lap. In the third lap, the blade 20 is moved horizontally by a predetermined amount of horizontal movement (+x) toward the central part Wc from the horizontal position (x) at the end of the second lap. The same procedure is followed for the fourth lap to the nth lap.

[0076] The fixed horizontal movement amount (+x) may be predetermined so that the final horizontal position at the end of the nth lap, which is the final lap, is a predetermined horizontal position such that the peripheral portion We is sufficiently separated. Also, the horizontal position of the blade 20 in the first lap may be any desired position greater than 0.

[0077] According to the edge trim of this embodiment, the blade 20 is gradually moved horizontally by three or more laps, which allows the crack to gradually extend from a gentler condition, and applies a stress to the peripheral portion We that is necessary and sufficient for separation.

[0078] (Fifth Embodiment) The edge trim according to the fifth embodiment will be described below with reference to Figure 18. In this embodiment, the control conditions for each of the three or more laps, including the first lap, the second lap, ... the nth lap, are set so that the amount of horizontal movement of the blade 20 increases in stages. In addition, the control conditions for each of the laps are set so that the rotation speed of the chuck 10 by the rotation mechanism 11 is changed in any of the first to nth laps. In this embodiment, throughout the first to nth laps, ultrasonic vibration is applied at a predetermined ultrasonic output, and the control conditions are set so that the blade 20 moves horizontally at a predetermined insertion speed. The ultrasonic output and insertion speed of the blade 20 may be constant throughout the first to nth laps.

[0079] As shown in Figure 18, in the first lap, the horizontal position of the blade 20 is set to 0, that is, the position where the tip of the blade 20 is in contact with the peripheral edge We of the wafer W. In one embodiment, in the first lap, the horizontal position of the blade 20 is set to the position where the tip of the vibrating blade 20 is in contact with the peripheral edge We of the wafer W at a certain vibration period. Also, in the first lap, the rotational speed of the chuck 10 by the rotation mechanism 11 is set to a first rotational speed. In the second lap, the same control conditions as in the first lap are set.

[0080] In the third lap, the blade 20 is moved horizontally by a predetermined amount of horizontal movement (+x) towards the central part Wc from the horizontal position (0) at the time of the second lap. Also in the third lap, the rotational speed of the chuck 10 by the rotation mechanism 11 is set to the second rotational speed. In the fourth lap, the blade 20 is moved horizontally by a predetermined amount of horizontal movement (+x) towards the central part Wc from the horizontal position at the time of the third lap. The process is then the same from the fourth lap to the nth lap. From the fourth lap to the nth lap, the rotational speed of the chuck 10 by the rotation mechanism 11 is set to the second rotational speed, as in the third lap.

[0081] Regarding the rotational speed of the chuck 10 by the rotating mechanism 11, the first rotational speed in the first and second laps is set to be smaller than the second rotational speed in the third to nth laps. For example, the first rotational speed is 3 rpm and the second rotational speed is 9 rpm.

[0082] Furthermore, the change in rotational speed is not limited to the two stages of the first and second rotational speeds as described above; the control conditions for each lap can be set to allow for three or more stages of change. Also, the first rotational speed may be set for more laps than the first and second laps. That is, the first rotational speed may be set for a series of consecutive laps, including the first lap, and the second rotational speed may be set for subsequent laps.

[0083] According to the edge trimming method of this embodiment, the low rotational speed of the chuck 10 allows ultrasonic vibrations to be applied to the contact target for a longer period of time, resulting in greater stress per unit time. As in this embodiment, the high stress on the contact target during the lap before the insertion of the blade 20 begins (horizontal position 0) allows cracks C to extend sufficiently from the peripheral modified layer M during the lap period. When the amount of horizontal movement is increased in subsequent laps, a peripheral modified region N with sufficient crack C has already been formed. Therefore, in the third to the Nth laps, where the amount of horizontal movement is increased, the separation of the peripheral portion We is performed under more favorable conditions.

[0084] As a modification of the fifth embodiment, the rotational speed is set to be greater than the second rotational speed, with the first rotational speed being greater than the second rotational speed, from the first to the kth lap (1 < k < n, the same applies hereafter), and the rotational speed being greater than the second rotational speed from the (k+1)th lap to the nth lap. In the first to the kth laps, for example, the horizontal position is set to 0, and the amount of horizontal movement is increased in stages from the (k+1)th lap to the nth lap. Even in this case, cracks C extend sufficiently from the peripheral modified layer M in the first to the kth laps. Then, in the (k+1)th lap to the nth lap, where the amount of horizontal movement is increased, the separation of the peripheral portion We is carried out under more favorable conditions.

[0085] (Sixth Embodiment) Hereinafter, an edge trim according to the sixth embodiment will be described with reference to Figures 19 and 20. In this embodiment, the control conditions for each of the three or more laps, including the first lap, second lap, ... nth lap, are set so that the amount of horizontal movement of the blade 20 increases in stages. In this embodiment, throughout the first to nth laps, ultrasonic vibration is applied with a predetermined ultrasonic output, the blade 20 is moved horizontally at a predetermined insertion speed, and the chuck 10 is rotated by the rotation mechanism 11 at a predetermined rotation speed. The ultrasonic output of the blade 20, the insertion speed, and the rotation speed of the chuck 10 may be constant throughout the first to nth laps.

[0086] As shown in Figure 19, in this embodiment, an inspection step is performed after the completion of the k-th wrap and before the start of the (k+1)-th wrap. In the inspection step, the portion of the second wafer S exposed by the separation of the peripheral portion We is inspected for residues such as fragments of the peripheral portion We, and for any scratches on the second wafer S. In the inspection step, the blade 20 is moved to a position where it does not come into contact with the peripheral portion We. In the example in Figure 19, the blade 20 is moved to a position further away from the central portion Wc of the wafer W than the horizontal position (0) in the first wrap.

[0087] As shown in Figure 20, in this embodiment, the edge trimming may include, for example, a peripheral removal device 1 having an inspection device 201 and a separation detection device 202.

[0088] The inspection process can be carried out using the inspection device 201. The inspection device 201 is provided, for example, to the side or above the chuck 10. The inspection device 201 may be a camera capable of imaging the portion of the second wafer S exposed by the separation of the peripheral portion We. In addition to the camera, it may also include any known configurations that can perform any desired inspection on the polymerized wafer T after the separation of the peripheral portion We. The inspection results, such as images acquired by the inspection device 201, are output to the control unit 100.

[0089] In this embodiment, the horizontal position at the end of the k-th lap may be predetermined to be a position that is specified in advance as a horizontal position where the peripheral portion We is sufficiently separated. That is, it is expected that the peripheral portion We will be sufficiently separated at the end of the k-th lap. In the inspection step after the k-th lap, the inspection device 201 checks whether the peripheral portion We is sufficiently separated, and the control unit 100 determines whether the separation is satisfactory. If the control unit 100 determines in the inspection step that the peripheral portion We is sufficiently separated, the (k+1)th lap and subsequent laps are not executed, and edge trimming is terminated. If the control unit 100 determines that the peripheral portion We is not sufficiently separated, the process proceeds to the (k+1)th lap.

[0090] In the (k+1)th lap, the horizontal position of the blade 20 is set to a position further from the central part Wc than the horizontal position ((k-1)x) at the end of the kth lap. This suppresses the blade 20 from strongly colliding with the peripheral part We remaining at the end of the kth lap, or from colliding with it from the side. The "position further from the central part Wc than the horizontal position at the end of the kth lap" is not particularly limited, but may be a position that has been empirically determined in advance to allow for the proper resumption of blade insertion 20. In laps from the (k+1)th lap onward, the control conditions for each lap are set so that the amount of horizontal movement of the blade 20 increases in stages, as in the laps prior to the (k+1)th lap.

[0091] In this embodiment, the inspection process was performed after the completion of the k-th lap, but instead, the inspection process may be performed after the completion of a lap prior to the k-th lap. In other words, the inspection process may be performed after the completion of a lap prior to the lap in which the blade 20 is moved to a predetermined horizontal position such that the peripheral portion We is sufficiently separated.

[0092] The inspection process may be performed after the wrap in which separation was detected in real-time separation detection has finished. Real-time separation detection can be performed using the separation detection device 202.

[0093] As shown in Figure 20, the separation detection device 202 is provided, for example, to the side or above the chuck 10, and detects, for example, that at least a portion of the first wafer W around its entire circumference has separated from the second wafer S. In one embodiment, the separation detection device 202 detects the peripheral edge of the polymerized wafer T during edge trimming by imaging with a CCD camera or IR camera, or by measurement with a laser displacement meter. The detection result is output to the control unit 100. In one embodiment, the separation detection device 202 is provided upstream of the blade 20 as the polymerized wafer T rotates.

[0094] For example, if the separation detection device 202 is a laser displacement meter, during edge trimming, a laser beam is shone from the separation detection device 202, which is located above the chuck 10, onto a region of the peripheral edge We of the first wafer W, and the position (height) of the shone point is detected. When the peripheral edge We separates, the laser beam that was shone onto the peripheral edge We of the first wafer W is shone onto the portion of the second wafer S that is exposed as a result of the separation of the peripheral edge We. At this time, the height of the shone point becomes lower, so the control unit 100 can determine that the peripheral edge We has separated.

[0095] If separation detection determines that the peripheral portion We has separated, after the completion of the wrapping process currently being performed, the blade 20 is moved to a standby position and the inspection process is performed by the inspection device 201.

[0096] According to the edge trim of this embodiment, when processing is performed with a predetermined number of wraps, the inspection step can be performed, thereby omitting the wrap after the separation of the peripheral portion We is complete. This allows for processing that is necessary and sufficient for the separation of the peripheral portion We.

[0097] In one modified example, the pressure of the blade 20 against the contact target is monitored using the pressure sensor 50, similar to the third embodiment. When the peripheral portion We separates, the pressure of the blade 20 decreases sharply, and based on this sharp decrease in pressure, the control unit 100 can determine that the peripheral portion We has separated. In one embodiment, pressure monitoring by the pressure sensor 50 and monitoring of the position of the peripheral portion We by the separation detection device 202 are used in combination, allowing for the detection of the separation of the peripheral portion We prior to the inspection process.

[0098] (Seventh Embodiment) The edge trim according to the seventh embodiment will be described below with reference to Figure 21. In this embodiment, the control conditions for each of the three or more laps, including the first lap, second lap, ... nth lap, are set so that the amount of horizontal movement of the blade 20 increases in stages. In this embodiment, throughout the first to nth laps, ultrasonic vibration is applied with a predetermined ultrasonic output, the blade 20 is moved horizontally at a predetermined insertion speed, and the chuck 10 is rotated by the rotation mechanism 11 at a predetermined rotation speed. The ultrasonic output of the blade 20, the insertion speed, and the rotation speed of the chuck 10 may be constant throughout the first to nth laps.

[0099] As shown in Figure 21, in the first lap, the horizontal position of the blade 20 is set to 0, that is, the position where the tip of the blade 20 is in contact with the peripheral edge We of the wafer W. In one embodiment, in the first lap, the horizontal position of the blade 20 is set to the position where the tip of the vibrating blade 20 is in contact with the peripheral edge We of the wafer W at a certain vibration period. In the second lap, a predetermined fixed first horizontal movement amount (+x) is set from the horizontal position (0) at the time of the first lap toward the central part Wc. １ Only then is the blade 20 moved horizontally. The same applies from the third lap to the (k-1) lap.

[0100] In the k-th lap, a predetermined fixed second horizontal displacement (+x) is set from the horizontal position in the (k-1)-th lap toward the central part Wc. ２ The blade 20 is moved horizontally only during this time. The same applies from the (k+1)th lap to the nth lap.

[0101] Regarding the horizontal movement of the blade 20, the first horizontal movement (+x) from the first to the (k-1) lap １ ) is the second horizontal displacement (+x) from the kth to the nth lap. ２ It is set to be smaller than ). First horizontal movement amount (+x １ ) and second horizontal movement amount (+x ２ This can be determined in advance through experiments or other means, from the viewpoint of performing processing necessary and sufficient for separating the peripheral We, and from the viewpoint of suppressing the scattering of peripheral We and the occurrence of defects on the second wafer S.

[0102] According to the edge trimming method of this embodiment, the blade 20 is gradually moved horizontally over three or more laps, allowing the crack to gradually extend from a gentler condition, thereby applying sufficient stress to the peripheral portion We for separation. Furthermore, in this embodiment, after sufficient crack propagation has occurred under gentle conditions up to the first to (k-1) laps, the blade 20 is inserted with a larger horizontal movement amount from the k-th lap onward. This reduces the overall number of laps while suppressing scattering of peripheral portion We and the occurrence of defects in the second wafer S, thereby improving throughput.

[0103] (Eighth Embodiment) Hereinafter, an edge trim according to the eighth embodiment will be described with reference to Figure 22. In this embodiment, the control conditions for each of the three or more laps, including the first lap, second lap, ... nth lap, are set so that the horizontal and vertical movement amounts of the blade 20 increase in stages. In this embodiment, throughout the first to nth laps, ultrasonic vibration is applied with a predetermined ultrasonic output, the blade 20 is moved horizontally at a predetermined insertion speed, and the chuck 10 is rotated by the rotation mechanism 11 at a predetermined rotation speed. The ultrasonic output of the blade 20, the insertion speed, and the rotation speed of the chuck 10 may be constant throughout the first to nth laps.

[0104] The gradual increase in the amount of horizontal movement of the blade 20 is the same as in the fourth embodiment. That is, with each lap, the blade 20 is gradually inserted toward the central part Wc by a constant amount of horizontal movement (+x).

[0105] As shown in Figure 22, in the first lap, the vertical position of the blade 20 is 0. The vertical position 0 is defined, for example, as the vertical position of the bonding interface between the first wafer W and the second wafer S. In the second lap, the blade 20 is moved vertically upward by a predetermined fixed vertical movement amount (+z) from the vertical position (0) at the end of the first lap. The same applies to the third and fourth laps. In Figure 22, the dashed-dotted line is a side view showing an example of the positional relationship between the first wafer W and the second wafer S, and the double-dotted-dotted line is a side view showing an example of the positional relationship of the blade 20 whose vertical position is determined according to the control conditions of this embodiment.

[0106] After the fourth lap, in the fifth lap, the amount of vertical movement does not change from the vertical position at the end of the fourth lap. In other words, in the laps from the fifth lap onward, contact with the blade 20 occurs at the vertical position at the end of the fourth lap.

[0107] As the peripheral portion We gradually separates due to contact with the blade 20, the peripheral portion We may lift vertically upward. In this case, the contact target shifts vertically upward. In contrast, according to the edge trim of this embodiment, the blade 20 moves vertically to follow the contact target shifting vertically upward. As a result, the blade 20 makes proper contact with the contact target, and the separation of the peripheral portion We is performed more favorably.

[0108] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the constituent elements of the embodiments described above can be combined in any way. Such any combination will naturally yield the functions and effects of each constituent element in the combination, as well as other functions and effects that will be apparent to those skilled in the art from the description herein.

[0109] For example, the peripheral removal device 1 may be integrated into a processing system that includes a laser processing device for forming a modified layer such as a peripheral modified layer M, a cleaning device, a wafer transport device, and a control unit for controlling them. In this case, the control unit 100 may be included in the control unit related to the processing system.

[0110] Furthermore, the effects described herein are merely descriptive or illustrative and not limiting. In other words, the technology relating to this disclosure may produce other effects that will be apparent to those skilled in the art from the description herein, in addition to or in lieu of the effects described herein.

[0111] 1 Peripheral removal device 10 Chuck 11 Rotation mechanism 20 Blade 21 Blade holding member 24 Horizontal movement mechanism S Second wafer T Polymerized wafer W First wafer

Claims

1. A substrate processing method for removing the peripheral edge of a first substrate in a superimposed substrate in which a first substrate and a second substrate are joined, in a substrate processing apparatus, wherein the substrate processing apparatus comprises: a substrate holding part for holding the superimposed substrate; a motor for rotating the substrate holding part; a contact member; a holding member for holding the contact member; and a horizontal movement mechanism configured to allow the holding member to move horizontally relative to the substrate holding part, wherein the substrate processing method comprises: moving the holding member to bring the contact member into contact with a target contact portion of the superimposed substrate held by the substrate holding part; rotating the substrate holding part by a first amount of rotation while controlling the contact member under a first control condition while the contact member is in contact with the target contact portion; and rotating the substrate holding part by a second amount of rotation while controlling the contact member under a second control condition different from the first control condition, wherein the sum of the rotation amounts including the first and second amounts of rotation is greater than one rotation.

2. The substrate processing method according to claim 1, wherein the first control condition and the second control condition include controlling the amount of horizontal movement of the contact member which is moved integrally with the holding member by the horizontal movement mechanism.

3. The substrate processing apparatus has a vertical movement mechanism configured to move the holding member vertically relative to the substrate holding portion, and the first control condition and the second control condition include control of the amount of vertical movement of the contact member which is moved integrally with the holding member by the vertical movement mechanism, according to claim 1.

4. The substrate processing method according to claim 1, wherein the substrate processing apparatus has an oscillator configured to cause the contact member to vibrate ultrasonically, and the first control condition and the second control condition include controlling the ultrasonic output of the oscillator when causing the contact member to vibrate ultrasonically.

5. The substrate processing method according to claim 1, wherein a peripheral modification region constituting a separation base point is formed near the boundary between the peripheral portion and the central portion of the first substrate.

6. The substrate processing method according to claim 1, wherein the motor is configured to control the rotational speed of the substrate holding portion, and when rotating the substrate holding portion by a first amount of rotation, the substrate holding portion is rotated at a first rotational speed, and when rotating the substrate holding portion by a second amount of rotation, the substrate holding portion is rotated at a second rotational speed different from the first rotational speed.

7. The substrate processing apparatus has a pressure sensor configured to measure at least horizontal pressure on the holding member, and the method for processing a substrate according to claim 1, wherein when the contact member is brought into contact with the contact target, it is determined that the contact member has come into contact with the contact target when the pressure value measured by the pressure sensor exceeds a threshold.

8. A substrate processing method according to claim 1, comprising rotating the substrate holding portion by a predetermined amount while controlling the contact member under a plurality of control conditions, including rotating the substrate holding portion by a first amount of rotation while controlling the contact member under a first control condition, and rotating the substrate holding portion by a second amount of rotation while controlling the contact member under a second control condition, wherein one unit of the control period during which the substrate holding portion is rotated by a predetermined amount while controlling the contact member under one of the control conditions is defined as one lap, and in three or more laps, the horizontal position of the contact member in one lap is set to a position moved by a predetermined fixed amount of horizontal movement toward the center of the first substrate from the horizontal position at the end of the previous lap.

9. The substrate processing method according to claim 8, wherein the motor is configured to control the rotational speed of the substrate holder, and in a series of consecutive wraps including the first wrap, the substrate holder is rotated at a first rotational speed, and in subsequent wraps, the substrate holder is rotated at a second rotational speed greater than the first rotational speed.

10. A substrate processing method according to claim 8, comprising an inspection step of checking whether the peripheral edge of the first substrate has been sufficiently separated at the end of any of the multiple wraps, wherein before the start of the inspection step, the contact member is moved to a position where it does not contact the contact target, and if, as a result of the inspection step, it is determined that the peripheral edge of the first substrate has been sufficiently separated, the wraps after the inspection step are not performed.

11. The substrate processing method according to claim 10, wherein the inspection step is performed after the completion of the wrapping, in which the contact member is moved to a position predetermined as the horizontal position such that the peripheral edge of the first substrate is sufficiently separated.

12. The substrate processing method according to claim 10, wherein the substrate processing apparatus has a separation detection device that detects that at least a portion of the peripheral edge of the first substrate has separated from the second substrate, and the inspection step is performed after the completion of the wrap in which the separation detection device has detected that at least a portion of the peripheral edge of the first substrate has separated from the second substrate.

13. In a series of wraps including the first wrap, the horizontal position of the contact member in one wrap is set to be moved by a predetermined fixed first horizontal movement amount toward the center of the first substrate from the horizontal position at the end of the previous wrap, and in subsequent wraps, the horizontal position of the contact member in one wrap is set to be moved by a predetermined fixed second horizontal movement amount toward the center of the first substrate from the horizontal position at the end of the previous wrap, and the first horizontal movement amount is set to be smaller than the second horizontal movement amount.

14. The substrate processing apparatus has a vertical movement mechanism configured to move the holding member vertically relative to the substrate holding portion, and in three or more wraps, the vertical position of the contact member in one of the wraps is set to a position that has been moved vertically upward by a predetermined amount from the vertical position at the end of the previous wrap. This is the substrate processing method according to claim 8.

15. A substrate processing apparatus for removing the peripheral edge of a first substrate in a polymer substrate in which a first substrate and a second substrate are joined, comprising: a substrate holding part for holding the polymer substrate; a motor for rotating the substrate holding part; a contact member; a holding member for holding the contact member; a horizontal movement mechanism configured to allow the holding member to move horizontally relative to the substrate holding part; and a control unit, wherein the control unit executes control comprising: moving the holding member to bring the contact member into contact with a contact target portion of the polymer substrate held by the substrate holding part; rotating the substrate holding part by a first amount of rotation while controlling the contact member under a first control condition while the contact member is in contact with the contact target portion; and rotating the substrate holding part by a second amount of rotation while controlling the contact member under a second control condition different from the first control condition, wherein the sum of the rotation amounts including the first and second amounts of rotation is greater than one rotation.

16. The substrate processing apparatus according to claim 15, wherein the first control condition and the second control condition include control of the amount of horizontal movement of the contact member which is moved integrally with the holding member by the horizontal movement mechanism.

17. The substrate processing apparatus according to claim 15, further comprising a vertical movement mechanism configured to allow the holding member to move vertically relative to the substrate holding portion, wherein the first control condition and the second control condition include control of the amount of vertical movement of the contact member which is moved integrally with the holding member by the vertical movement mechanism.

18. The substrate processing apparatus according to claim 15, comprising an oscillator configured to cause the contact member to vibrate ultrasonically, wherein the first control condition and the second control condition include control of the ultrasonic output when causing the contact member to vibrate ultrasonically.

19. The substrate processing apparatus according to claim 15, wherein a peripheral modification region constituting a separation base point is formed near the boundary between the peripheral portion and the central portion of the first substrate.

20. The substrate processing apparatus according to claim 15, wherein the control unit is configured such that the motor can control the rotational speed of the substrate holding portion, and performs control comprising: rotating the substrate holding portion at a first rotational speed when rotating the substrate holding portion by a first rotational amount, and rotating the substrate holding portion at a second rotational speed different from the first rotational speed when rotating the substrate holding portion by a second rotational amount.

21. The substrate processing apparatus according to claim 15, comprising a pressure sensor configured to measure at least horizontal pressure on the holding member, wherein the control unit performs control to bring the contact member into contact with the contact target, and determines that the contact member has come into contact with the contact target when the pressure value measured by the pressure sensor exceeds a threshold.

22. The substrate processing apparatus according to claim 15, wherein the control unit performs control having a plurality of control conditions for rotating the substrate holding portion by a predetermined amount of rotation while controlling the contact member, including rotating the substrate holding portion by a first amount of rotation while controlling the contact member under a first control condition, and rotating the substrate holding portion by a second amount of rotation while controlling the contact member under a second control condition, and a unit of the control period during which the substrate holding portion is rotated by a predetermined amount of rotation while controlling the contact member under one of the control conditions is defined as a lap, and in three or more laps, the horizontal position of the contact member in one lap is set to a position moved by a predetermined fixed amount of horizontal movement toward the center of the first substrate from the horizontal position at the end of the previous lap toward the center of the first substrate.

23. The substrate processing apparatus according to claim 22, wherein the motor is configured to control the rotational speed of the substrate holding portion, and the control unit performs control to rotate the substrate holding portion at a first rotational speed in a plurality of consecutive laps including the first lap, and rotate the substrate holding portion at a second rotational speed greater than the first rotational speed in subsequent laps.

24. The substrate processing apparatus according to claim 22, wherein the control unit executes a control having an inspection step of checking whether the peripheral edge of the first substrate has been sufficiently separated at the end of any of the plurality of wraps, and if it is determined as a result of the inspection step that the peripheral edge of the first substrate has been sufficiently separated, the wrap after the inspection step is not executed.

25. The substrate processing apparatus according to claim 24, wherein the inspection step is performed after the completion of the wrapping, in which the contact member is moved to a position predetermined as the horizontal position such that the peripheral edge of the first substrate is sufficiently separated.

26. The substrate processing apparatus according to claim 24, wherein the substrate processing apparatus has a separation detection device that detects that at least a portion of the peripheral edge of the first substrate has separated from the second substrate, and the inspection step is performed after the completion of the wrap in which the separation detection device has detected that at least a portion of the peripheral edge of the first substrate has separated from the second substrate.

27. In a series of consecutive wraps including the first wrap, the horizontal position of the contact member in one wrap is set to be moved by a predetermined fixed first horizontal displacement amount toward the center of the first substrate from the horizontal position at the end of the previous wrap, and in subsequent wraps, the horizontal position of the contact member in one wrap is set to be moved by a predetermined fixed second horizontal displacement amount toward the center of the first substrate from the horizontal position at the end of the previous wrap, and the first horizontal displacement amount is set to be smaller than the second horizontal displacement amount, as described in claim 22.

28. The substrate processing apparatus according to claim 22, wherein the substrate processing apparatus has a vertical movement mechanism configured to move the holding member vertically relative to the substrate holding portion, and in three or more wraps, the vertical position of the contact member in one of the wraps is set to a position that has been moved vertically upward by a predetermined fixed amount from the vertical position at the end of the previous wrap.

29. A program that operates on a computer of a control unit that controls a substrate processing apparatus, causing the substrate processing apparatus to perform a substrate processing method for removing the peripheral edge of the first substrate in a polymer substrate in which a first substrate and a second substrate are joined, wherein the substrate processing apparatus comprises: a substrate holding unit for holding the polymer substrate; a motor for rotating the substrate holding unit; a contact member; a holding member for holding the contact member; and a horizontal movement mechanism configured to allow the holding member to move horizontally relative to the substrate holding unit, wherein the substrate processing method comprises: moving the holding member to bring the contact member into contact with a target portion of the polymer substrate held by the substrate holding unit; rotating the substrate holding unit by a first amount of rotation while controlling the contact member under a first control condition while the contact member is in contact with the target portion; and rotating the substrate holding unit by a second amount of rotation while controlling the contact member under a second control condition different from the first control condition, wherein the sum of the rotation amounts including the first and second amounts of rotation is greater than one rotation.

30. A readable computer storage medium storing a program that operates on a computer of a control unit that controls a substrate processing apparatus, which causes the substrate processing apparatus to perform a substrate processing method for removing the peripheral edge of the first substrate in a polymer substrate in which a first substrate and a second substrate are joined, wherein the substrate processing apparatus comprises: a substrate holding unit for holding the polymer substrate; a motor for rotating the substrate holding unit; a contact member; a holding member for holding the contact member; and a horizontal movement mechanism configured to allow the holding member to move horizontally relative to the substrate holding unit, wherein the substrate processing method comprises: moving the holding member to bring the contact member into contact with a target portion of the polymer substrate held by the substrate holding unit; rotating the substrate holding unit by a first amount of rotation while controlling the contact member under a first control condition while the contact member is in contact with the target portion of contact; and rotating the substrate holding unit by a second amount of rotation while controlling the contact member under a second control condition different from the first control condition, wherein the sum of the rotation amounts including the first and second amounts of rotation is greater than one rotation.

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