Semiconductor relay

The semiconductor relay's innovative die pad design with obtuse angles and resin coverage addresses insulation issues, enhancing reliability by reducing discharge and improving electrical insulation between light-emitting and receiving elements.

WO2026094531A1PCT designated stage Publication Date: 2026-05-07PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
Filing Date
2025-10-01
Publication Date
2026-05-07

AI Technical Summary

Technical Problem

Existing semiconductor relays face challenges in improving electrical insulation between the light-emitting and light-receiving elements, leading to potential discharge and reduced reliability.

Method used

The semiconductor relay incorporates a design with an obtuse angle between the first and second surfaces of the die pads, covered by a translucent and light-blocking resin, which enhances electrical insulation and reduces discharge likelihood.

Benefits of technology

The design effectively improves electrical insulation, reducing discharge occurrences and enhancing the reliability of the semiconductor relay by minimizing electric field concentration at corners and intersections.

✦ Generated by Eureka AI based on patent content.

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Abstract

In the present invention, a light-receiving element (62) is positioned below a light-emitting element (61) and faces the light-emitting element (61). The light-emitting element (61) is placed on a first die pad (11). The light-receiving element (62) is placed on a second die pad (31). A light-transmitting resin (91) is located between the first die pad (11) and the second die pad (31) and covers the light-emitting element (61) and the light-receiving element (62). A light-blocking resin (91) covers the first die pad (11), the second die pad (31), and the light-transmitting resin (91). The first die pad (11) has: a first surface (111) on which the light-emitting element (61) is placed, which faces the second die pad (31), and which is covered by the light-transmitting resin (91); and a second surface (112) which connects to the first surface (111), and which is located at an end of the first die pad (11). In the first die pad (11), an angle (Ɵ1) formed by the first surface (111) and the second surface (112) is an obtuse angle.
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Description

Semiconductor relay

[0001] The present disclosure relates to a semiconductor relay, and more particularly to a semiconductor relay including a light emitting element and a light receiving element.

[0002] Patent Document 1 discloses a semiconductor relay.

[0003] This semiconductor relay includes an optical coupling portion and a switching element. The optical coupling portion is configured by opposing a light emitting element and a light receiving element and encapsulating the light emitting element and the light receiving element with a translucent resin. The light emitting element is provided on a lead frame on the light emitting element side. The switching element is turned on and off by signal transmission in the optical coupling portion.

[0004] In the semiconductor relay, the optical coupling portion and the switching element are molded with a light-blocking resin.

[0005] Japanese Patent Application Laid-Open No. 2010-177247

[0006] In the semiconductor relay as described in Patent Document 1, it may be desirable to improve the electrical insulation between the member on the light emitting element side and the member on the light receiving element side.

[0007] A semiconductor relay according to an aspect of the present disclosure includes a light emitting element, a light receiving element, a first die pad, a second die pad, a translucent resin, and a light-blocking resin. The light receiving element is located below the light emitting element and faces the light emitting element. The first die pad has the light emitting element mounted thereon and is electrically connected to the light emitting element. The second die pad has the light receiving element mounted thereon and is electrically connected to the light receiving element. The translucent resin is located between the first die pad and the second die pad and covers the light emitting element and the light receiving element. The light-blocking resin covers the first die pad, the second die pad, and the translucent resin. The first die pad has a first surface and a second surface. The first surface has the light emitting element mounted thereon, faces the second die pad, and is covered with the translucent resin. The second surface is connected to the first surface and is located at an end of the first die pad. An angle formed by the first surface and the second surface in the first die pad is an obtuse angle.

[0008] According to this disclosure, there is an advantage in that it becomes possible to improve the electrical insulation between the light-emitting element and the light-receiving element.

[0009] Figure 1 is a perspective view of a semiconductor relay according to an embodiment. Figure 2 is a perspective view of the semiconductor relay with the light-shielding resin removed. Figure 3 is a perspective view of the semiconductor relay with the light-shielding resin and light-transmitting resin removed. Figure 4 is a top view of the semiconductor relay with the light-shielding resin removed. Figure 5 is a bottom view of the main part of the semiconductor relay including the first die pad. Figure 6 is a top view of the main part of the semiconductor relay including the second die pad. Figure 7 is a cross-sectional view taken along the line VII-VII in Figure 4. Figure 8 is a cross-sectional view taken along the line VIII-VIII in Figure 4. Figure 9 is a circuit diagram showing the configuration of the semiconductor relay. Figure 10 is a cross-sectional view of a semiconductor relay of Modification 1. Figure 11 is a cross-sectional view of a semiconductor relay of Modification 2. Figure 12 is a cross-sectional view of a semiconductor relay of Modification 3. Figure 13 is a cross-sectional view of a semiconductor relay of Modification 4. Figure 14 is a bottom view of the main part of a semiconductor relay including the first die pad in Modification 5. Figure 15 is a cross-sectional view of a semiconductor relay according to Modification 6. Figure 16 is a cross-sectional view of a semiconductor relay according to Modification 7.

[0010] A semiconductor relay according to an embodiment of this disclosure will be described with reference to the drawings. The figures described in the embodiments below are schematic diagrams, and the ratios of the size and thickness of each component in the figures do not necessarily reflect the actual dimensional ratios.

[0011] (1) Embodiments The semiconductor relay 100 of the embodiment will be described with reference to the drawings.

[0012] (1.1) Structure of the semiconductor relay As shown in Figures 1 to 6, the semiconductor relay 100 of this embodiment includes a first input terminal 1, a second input terminal 2, a connection terminal 3, a first output terminal 4, a second output terminal 5, a light-emitting element 61, a light-receiving element 62, a first switching element 71, a second switching element 72, a plurality of wires 8, a light-transmitting resin 91, and a light-shielding resin 92. In this embodiment, the plurality of wires 8 include the first wire 81 to the sixth wire 86.

[0013] As shown in Figures 2 to 4, the first input terminal 1 comprises a first die pad 11 and a first input lead 12. As shown in Figure 5, the light-emitting element 61 is mounted on the first die pad 11 and electrically connected to the first die pad 11.

[0014] As shown in Figures 2 and 3, the connection terminal 3 comprises a second die pad 31 and a connection lead 32. The light-receiving element 62 is mounted on the second die pad 31 and electrically connected to the second die pad 31. As shown in Figure 7, the light-receiving element 62 faces the light-emitting element 61.

[0015] As shown in Figure 2, the light-emitting element 61 and the light-receiving element 62 are covered with a light-transmitting resin 91. Also, as shown in Figure 1, the first die pad 11, the second die pad 31, and the light-transmitting resin 91 are covered with a light-shielding resin 92. The first input lead 12 of the first input terminal 1 includes a portion located inside the light-shielding resin 92 (inner lead) 121 and a portion protruding from the light-shielding resin 92 (outer lead) 122.

[0016] For convenience, the following explanation will define the three axes (X-axis, Y-axis, and Z-axis) of a right-handed three-dimensional Cartesian coordinate system for the semiconductor relay 100 as follows. Specifically, the direction in which the light-emitting element 61 and the light-receiving element 62 face each other is defined as the Z-axis direction. The direction perpendicular to the Z-axis direction, and in which the outer lead 122 of the first input lead 12 extends, is defined as the Y-axis direction. The direction perpendicular to both the Y-axis and Z-axis directions is defined as the X-axis direction. For convenience of explanation, the Z-axis direction is defined as the up-down direction, with the side where the light-emitting element 61 is located relative to the light-receiving element 62 (positive Z-axis direction) being defined as "up," and the opposite side as "down." The Y-axis direction is defined as the left-right direction, with the direction in which the outer lead 122 protrudes from the light-shielding resin 92 (negative Y-axis direction) being defined as "left," and the opposite side as "right." The X-axis direction is defined as the front-back direction, with the positive X-axis direction being "front," and the opposite side as "back." However, the provisions regarding the axis and orientation in this disclosure merely indicate the relative positional relationship between the components of the semiconductor relay 100 and do not limit the orientation of the semiconductor relay 100 during use.

[0017] In this disclosure, the numerical values ​​of angles (including orthogonal, parallel, etc.) are not necessarily exact values ​​and may include processing tolerances of the components, manufacturing tolerances, assembly tolerances between components, etc.

[0018] As shown in Figures 2 to 5, the first input terminal 1 comprises a first die pad 11 and a first input lead 12.

[0019] The first die pad 11 is plate-shaped. The first die pad 11 is arranged so that its thickness direction is oriented vertically.

[0020] The first input lead 12 is formed integrally with the first die pad 11. The first input lead 12 integrally comprises a first portion that is C-shaped in plan view and extends to the left from the right end of the front surface of the first die pad 11, a second portion that extends diagonally downward to the left from the left end of the first portion, and a third portion that extends to the left from the left end of the second portion. The right side surface of the first portion of the first input lead 12 is continuous and integral with the right side surface of the first die pad 11. In this disclosure, "plan view" means viewing the member of interest from above or below.

[0021] As shown in Figures 2 to 5, the second input terminal 2 comprises a connecting piece 21 and a second input lead 22.

[0022] The connecting piece 21 is plate-shaped. The connecting piece 21 is arranged so that its thickness direction is oriented vertically. The connecting piece 21 is positioned behind the first die pad 11, with a gap between it and the first die pad 11.

[0023] For convenience, the first die pad 11 and the connecting piece 21 may be collectively referred to as the "pad portion 10" below. The pad portion 10 has a roughly rectangular outer edge in plan view.

[0024] The second input lead 22 is formed integrally with the connecting piece 21. The second input lead 22 integrally comprises a first portion that is inverted C-shaped in plan view and extends to the left from the right end of the rear side surface of the connecting piece 21, a second portion that extends diagonally downward to the left from the left end of the first portion, and a third portion that extends to the left from the left end of the second portion. The right side surface of the first portion of the second input lead 22 is continuous and integral with the right side surface of the connecting piece 21.

[0025] The first input terminal 1 and the second input terminal 2 may be composed of, for example, a single first lead frame.

[0026] The light-emitting element 61 is a component that emits light. The light-emitting element 61 includes, for example, an LED (Light Emitting diode). As shown in Figure 5, the light-emitting element 61 is mounted on the first die pad 11 of the first input terminal 1. Figure 5 is a bottom view of the portion including the first die pad 11, viewed from below.

[0027] As shown in Figure 9, the light-emitting element 61 is electrically connected to the first input terminal 1 and the second input terminal 2.

[0028] More specifically, the light-emitting element 61 has a cathode terminal on its upper surface and an anode terminal on its lower surface. The cathode terminal of the light-emitting element 61 is fixed to the lower surface of the first die pad 11 with a conductive adhesive such as silver paste. The first end of the first wire 81 is fixed to the anode terminal of the light-emitting element 61, and the second end of the first wire 81 is fixed to the connecting piece 21 of the second input terminal 2.

[0029] When current flows between the first input terminal 1 and the second input terminal 2, the light-emitting element 61 emits light downwards.

[0030] As shown in Figures 5, 7, and 8, the first die pad 11 of the first input terminal 1 has a first surface 111 and a side surface 113. For convenience, Figure 7 also shows an enlarged view of the area near the boundary between the first surface 111 and the side surface 113.

[0031] The first surface 111 is the lower surface of the first die pad 11. The first surface 111 is a plane. The normal to the first surface 111 points downward. A light-emitting element 61 is placed on the first surface 111.

[0032] The side surface 113 is a plane. The normal to the side surface 113 points to the side (perpendicular to the vertical direction).

[0033] As shown in Figures 5, 7, and 8, the first die pad 11 further has a second surface 112. The second surface 112 is located at the end of the first die pad 11. The second surface 112 is located between the first surface 111 (bottom surface) and the side surface 113. The second surface 112 is planar. The normal of the second surface 112 points diagonally downward. The second surface 112 extends along the edge of the first surface 111.

[0034] As shown in Figure 7, the angle θ1 between the first surface 111 and the second surface 112 within the first die pad 11 is an obtuse angle (greater than 90° and less than 180°). In other words, the angle between the normal of the first surface 111 and the normal of the second surface 112 is an acute angle (greater than 0° and less than 90°). In this disclosure, "the angle θ1 between the first surface 111 and the second surface 112 within the first die pad 11" means the interior angle between the line segment corresponding to the first surface 111 and the line segment corresponding to the second surface 112 in the contour line of the first die pad 11 when viewed in a cross-section including the thickness direction (vertical direction) of the first die pad 11 (see Figure 7). In this embodiment, the angle θ1 between the first surface 111 and the second surface 112 within the first die pad 11 is 135°. Furthermore, as shown in Figure 7, the angle θ2 between the second surface 112 and the side surface 113 within the first die pad 11 is obtuse. In other words, the angle between the normal to the second surface 112 and the normal to the side surface 113 is acute. In this embodiment, the angle θ2 between the second surface 112 and the side surface 113 within the first die pad 11 is 135°. Such a second surface 112 can be formed, for example, by chamfering.

[0035] As shown in Figure 5, in this embodiment, the second surface 112 is provided at the front end and right end of the first die pad 11. In this embodiment, the second surface 112 is not provided at the rear end (the end facing the second input terminal 2) and left end of the first die pad 11.

[0036] As shown in Figures 5 and 8, the connecting piece 21 of the second input terminal 2 has a first surface 211 and a side surface 213.

[0037] The first surface 211 is the lower surface of the connecting piece 21. The first surface 211 is a plane. The normal to the first surface 211 points downward. The second end of the first wire 81 is fixed to the first surface 211.

[0038] The side surface 213 is a plane. The normal to the side surface 213 points to the side (perpendicular to the vertical direction).

[0039] As shown in Figure 5, the connecting piece 21 further has a second surface 212. The second surface 212 is located at the end of the connecting piece 21. The second surface 212 is located between the first surface 211 (bottom surface) and the side surface 213. The second surface 212 is planar. The normal of the second surface 212 points diagonally downward. The second surface 212 extends along the edge of the first surface 111.

[0040] The shape of the second surface 212 of the connecting piece 21 is the same as the shape of the second surface 112 of the first die pad 11 (see Figure 7). That is, the angle between the first surface 211 and the second surface 212 within the connecting piece 21 is obtuse. In this embodiment, the angle between the first surface 211 and the second surface 212 within the connecting piece 21 is 135°. Also, the angle between the second surface 212 and the side surface 213 within the connecting piece 21 is obtuse. In this embodiment, the angle between the second surface 212 and the side surface 213 within the connecting piece 21 is 135°. Such a second surface 212 can be formed, for example, by chamfering.

[0041] As shown in Figure 5, in this embodiment, the second surface 212 is provided at the right end of the connecting piece 21. In this embodiment, the second surface 212 is not provided at the front end (the end facing the first die pad 11), the rear end, or the left end of the connecting piece 21.

[0042] Briefly, the pad portion 10 has a first surface 101 (the first surface 111 of the first die pad 11 and the first surface 211 of the connection piece 21) on which the light-emitting element 61 is placed, a second surface 102 (the second surface 112 of the first die pad 11 and the second surface 212 of the connection piece 21) located at the end of the pad portion 10, and a side surface 103 (the side surface 113 of the first die pad 11 and the side surface 213 of the connection piece 21). The angle formed by the first surface 101 and the second surface 102 within the pad portion 10 is an obtuse angle. Also, the angle formed by the second surface 102 and the side surface 103 within the pad portion 10 is an obtuse angle.

[0043] As shown in FIGS. 2, 3, and 6, the connection terminal 3 includes a second die pad 31 and a connection lead 32.

[0044] The second die pad 31 is plate-shaped. The second die pad 31 has a main body portion that is rectangular in plan view. Also, the second die pad 31 has a first protruding piece that protrudes forward from the left end portion of the front side surface of the main body portion, and a second protruding piece that protrudes backward from the left end portion of the rear side surface of the main body portion.

[0045] The second die pad 31 is arranged such that the thickness direction faces the vertical direction. The second die pad 31 is arranged below the pad portion 10 such that the upper surface of the second die pad 31 faces the first surface 101 and the second surface 102 of the pad portion 10. That is, the first surface 111 of the first die pad 11 faces the second die pad 31, and the second surface 112 of the first die pad 11 faces the second die pad 31. In the present disclosure, "two surfaces face each other" is a concept that includes not only the case where two surfaces face each other in a parallel state but also the case where two surfaces face each other in an oblique state.

[0046] As shown in FIG. 7, the second surface 112 of the first die pad 11 overlaps the second die pad 31 in the vertical direction. Also, the second surface 212 of the connection piece 21 overlaps the second die pad 31 in the vertical direction. In other words, in plan view, the entire second surface 102 of the pad portion 10 is located inside the second die pad 31. However, this is not limited thereto, and in plan view, at least a part of the second surface 112 of the first die pad 11 may be located outside the outer edge of the second die pad 31.

[0047] The connection lead 32 is formed integrally with the second die pad 31. The connection lead 32 extends rightward from the center of the right side surface of the main body portion of the second die pad 31. The connection lead 32 integrally has a first portion that extends rightward from the right side surface of the main body portion of the second die pad 31, a second portion that extends obliquely upward to the right from the right end of the first portion, and a third portion that extends rightward from the right end of the second portion.

[0048] The light receiving element 62 is a component that receives the light emitted by the light emitting element 61. The light receiving element 62 has sensitivity to light of a predetermined wavelength including the light emitted by the light emitting element 61. As shown in FIG. 6, the light receiving element 62 is placed on the second die pad 31. As shown in FIG. 7, the light receiving element 62 is located below the light emitting element 61.

[0049] The light receiving element 62 is, for example, a component in which a photoelectric conversion element 621 (see FIG. 9) and a control circuit 622 (see FIG. 9) are integrated into one chip.

[0050] The photoelectric conversion element 621 includes, for example, a plurality of photodiodes (photodiode array) arranged in an array. The photoelectric conversion element 621 receives light from above. The control circuit 622 is electrically connected to the photoelectric conversion element 621.

[0051] The light receiving element 62 (more specifically, the control circuit 622) is electrically connected to the connection terminal 3. As shown in FIGS. 6 and 8, the first end of the fourth wire 84 is fixed to the upper surface of the light receiving element 62, and the second end of the fourth wire 84 is fixed to the connection terminal 3 (more specifically, the second die pad 31). As shown in FIG. 8, the fourth wire 84 is located between the first die pad 11 and the second die pad 31 and extends so as to intersect the second surface 112 of the first die pad 11 in a plan view.

[0052] As shown in FIGS. 2 to 4 and FIG. 6, the first output terminal 4 includes a third die pad 41 and a first output lead 42.

[0053] The third die pad 41 is plate-shaped. The third die pad 41 is positioned so that its thickness direction is oriented vertically. The third die pad 41 is positioned in front of the first portion of the connecting lead 32, with a gap between it and the first portion of the connecting lead 32.

[0054] The first output lead 42 is formed integrally with the third die pad 41. The first output lead 42 integrally comprises a first portion extending to the right from the right side of the third die pad 41, a second portion extending diagonally upward to the right from the right end of the first portion, and a third portion extending to the right from the right end of the second portion. The second portion of the first output lead 42 is positioned in front of the second portion of the connecting lead 32, with a gap between them.

[0055] As shown in Figures 2 to 4 and Figure 6, the second output terminal 5 includes a fourth die pad 51 and a second output lead 52.

[0056] The fourth die pad 51 is plate-shaped. The fourth die pad 51 is positioned so that its thickness direction is oriented vertically. The fourth die pad 51 is positioned behind the first portion of the connecting lead 32, with a gap between it and the first portion of the connecting lead 32. The first portion of the connecting lead 32 is located between the third die pad 41 and the fourth die pad 51.

[0057] The second output lead 52 is formed integrally with the fourth die pad 51. The second output lead 52 integrally has a first portion extending to the right from the right side of the fourth die pad 51, a second portion extending diagonally upward to the right from the right end of the first portion, and a third portion extending to the right from the right end of the second portion. The second portion of the second output lead 52 is positioned behind the second portion of the connecting lead 32, with a gap between them. The second portion of the connecting lead 32 is located between the second portion of the first output lead 42 and the second portion of the second output lead 52.

[0058] The connection terminal 3, the first output terminal 4, and the second output terminal 5 may be composed of, for example, a single second lead frame.

[0059] The first switching element 71 is, for example, an enhancement-type n-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). As shown in Figures 2 to 4 and Figure 6, the first switching element 71 is mounted on the upper surface of the third die pad 41.

[0060] As shown in Figure 9, the first switching element 71 is electrically connected to the light receiving element 62 (more specifically, the control circuit 622) and the first output terminal 4. The first switching element 71 is also electrically connected to the second switching element 72 via the connection terminal 3.

[0061] More specifically, the first switching element 71 has a control terminal (e.g., a gate terminal), a first main terminal (e.g., a drain terminal), and a second main terminal (e.g., a source terminal).

[0062] As shown in Figures 3, 4, and 6, the second end of the second wire 82, whose first end is fixed to the light-receiving element 62, is fixed to the control terminal of the first switching element 71. The second wire 82 is located between the first die pad 11 and the second die pad 31 and extends so as to intersect the second surface 112 of the first die pad 11 in a plan view.

[0063] Furthermore, the first main terminal of the first switching element 71 is provided on the lower surface of the first switching element 71. This first main terminal is fixed to the upper surface of the third die pad 41 with a conductive adhesive such as silver paste. The first end of the fifth wire 85 is fixed to the second main terminal of the first switching element 71, and the second end of the fifth wire 85 is fixed to the connection terminal 3 (more specifically, the first portion of the connection lead 32).

[0064] The second switching element 72 is, for example, an enhancement-type n-channel MOSFET. As shown in Figures 2 to 4 and Figure 6, the second switching element 72 is mounted on the upper surface of the fourth die pad 51.

[0065] As shown in Figure 9, the second switching element 72 is electrically connected to the light receiving element 62 (more specifically, the control circuit 622) and the second output terminal 5. The second switching element 72 is also electrically connected to the first switching element 71 via the connection terminal 3.

[0066] More specifically, the second switching element 72 has a control terminal (e.g., a gate terminal), a first main terminal (e.g., a drain terminal), and a second main terminal (e.g., a source terminal).

[0067] As shown in Figures 3, 4, and 6, the second end of the third wire 83, whose first end is fixed to the light-receiving element 62, is fixed to the control terminal of the second switching element 72. The third wire 83 is located between the connecting piece 21 and the second die pad 31 and extends so as to intersect the second surface 212 of the connecting piece 21 in a plan view.

[0068] Furthermore, the first main terminal of the second switching element 72 is provided on the lower surface of the second switching element 72. This first main terminal is fixed to the upper surface of the fourth die pad 51 with a conductive adhesive such as silver paste. The first end of the sixth wire 86 is fixed to the second main terminal of the second switching element 72, and the second end of the sixth wire 86 is fixed to the connection terminal 3 (more specifically, the first portion of the connection lead 32).

[0069] The control circuit 622 of the light-receiving element 62 controls the on / off state of the first switching element 71 and the second switching element 72 in accordance with the output signal output from the photoelectric conversion element 621. The control circuit 622 controls the on / off state of the first switching element 71 and the second switching element 72, for example, by switching the signal level of the control signal output to the first switching element 71 and the second switching element 72 between a high level and a low level. The high level of the control signal is a voltage level higher than the gate threshold voltage of the first switching element 71 and the second switching element 72. The low level of the control signal is a voltage level lower than the gate threshold voltage of the first switching element 71 and the second switching element 72, for example, 0V.

[0070] The control circuit 622 turns on the first switching element 71 and the second switching element 72 when, for example, current flows through the light-emitting element 61, causing the light-emitting element 61 to emit light, and the photoelectric conversion element 621 receives that light and outputs a high-level output signal. On the other hand, the control circuit 622 turns off the first switching element 71 and the second switching element 72 when the photoelectric conversion element 621 is not receiving light (when the received light intensity is below a threshold level).

[0071] The translucent resin 91 has electrical insulating properties. Furthermore, the translucent resin 91 has the property of transmitting light emitted by the light-emitting element 61 (translucency). The translucent resin 91 is, for example, a transparent silicone resin. However, it is not limited to this; the translucent resin 91 can be any insulating resin that is transparent to light emitted by the light-emitting element 61.

[0072] As shown in Figures 2, 4 to 7, the translucent resin 91 is located between the first die pad 11 and the second die pad 31. The translucent resin 91 covers the light-emitting element 61 and the light-receiving element 62. In Figure 5, for convenience, only the outer edge of the upper surface of the translucent resin 91 is shown by a dashed line. Also, in Figures 6 and 7, for convenience, the contour shape of the translucent resin 91 is shown by a dashed line.

[0073] In this embodiment, the light-transmitting resin 91 is located between the pad portion 10 and the second die pad 31. Furthermore, the light-transmitting resin 91 covers the entire first surface 101 of the pad portion 10, the entire light-emitting element 61, the entire upper surface of the main body portion of the second die pad 31, and the entire light-receiving element 62.

[0074] In this embodiment, the second surface 102 of the pad portion 10 (the second surface 112 of the first die pad 11 and the second surface 212 of the connecting piece 21) is not covered with the translucent resin 91. The outer edge of the upper surface of the translucent resin 91 follows the outer edge of the first surface 101 of the pad portion 10. That is, as shown in Figure 5, in the portions of the pad portion 10 where the second surface 102 is provided (front end and right end), the outer edge of the upper surface of the translucent resin 91 follows the boundary between the first surface 101 and the second surface 102. Also, in the portions of the pad portion 10 where the second surface 102 is not provided (rear end and left end), the outer edge of the upper surface of the translucent resin 91 follows the boundary between the first surface 101 and the side surface 103 of the pad portion 10.

[0075] As shown in Figure 1, the light-shielding resin 92 covers the first die pad 11, the second die pad 31, and the light-transmitting resin 91.

[0076] The light-shielding resin 92 has electrical insulating properties. Furthermore, the light-shielding resin 92 has the property (light-shielding) of blocking light to which the light-receiving element 62 is sensitive. The light-shielding resin 92 is, for example, an epoxy resin containing a black dye. However, it is not limited to this; the light-shielding resin 92 can be any insulating resin that blocks light.

[0077] In this embodiment, the light-shielding resin 92 covers the entirety of the first die pad 11 and a portion of the first input lead 12 of the first input terminal 1. In other words, the first input lead 12 includes a portion located inside the light-shielding resin 92 (inner lead) 121 and a portion protruding from the light-shielding resin 92 (outer lead) 122. In this embodiment, for example, a portion of the first, second, and third parts of the first input lead 12 is the inner lead 121, and the remainder of the third part is the outer lead 122.

[0078] Furthermore, in this embodiment, the light-shielding resin 92 covers the entirety of the connecting piece 21 of the second input terminal 2 and a portion of the second input lead 22. In other words, the second input lead 22 includes a portion located inside the light-shielding resin 92 (inner lead) 221 and a portion protruding from the light-shielding resin 92 (outer lead) 222. In this embodiment, for example, a portion of the first, second, and third parts of the second input lead 221 is the inner lead 221, and the remainder of the third part is the outer lead 222.

[0079] Furthermore, in this embodiment, the light-shielding resin 92 covers almost the entire connection terminal 3. As shown in Figure 1, of the connection terminal 3, only the tip surface of the third portion of the connection lead 32 is exposed from the light-shielding resin 92.

[0080] Furthermore, in this embodiment, the light-shielding resin 92 covers the entire third die pad 41 of the first output terminal 4 and a portion of the first output lead 42. In other words, the first output lead 42 includes a portion located within the light-shielding resin 92 (inner lead) 421 and a portion protruding from the light-shielding resin 92 (outer lead) 422. In this embodiment, for example, a portion of the first, second, and third parts of the first output lead 42 is the inner lead 421, and the remainder of the third part is the outer lead 422.

[0081] Furthermore, in this embodiment, the light-shielding resin 92 covers the entire fourth die pad 51 of the second output terminal 5 and a portion of the second output lead 52. In other words, the second output lead 52 includes a portion located within the light-shielding resin 92 (inner lead) 521 and a portion protruding from the light-shielding resin 92 (outer lead) 522. In this embodiment, for example, the first portion, the second portion, and a portion of the third portion of the second output lead 52 are inner leads 521, and the remainder of the fifth portion is an outer lead 422.

[0082] The multiple wires 8 include the first wire 81 to the sixth wire 86 described above.

[0083] As shown in Figures 2, 3, and 5, the entire first wire 81 is embedded in the translucent resin 91. The first wire 81 is electrically connected to the light-emitting element 61 and the connecting piece 21.

[0084] As shown in Figures 1 and 2, the second wire 82 has its first end located inside the light-transmitting resin 91, and its second end is located inside the light-shielding resin 92, passing through the interface between the light-transmitting resin 91 and the light-shielding resin 92. The second wire 82 is electrically connected to the light-receiving element 62 and the first switching element 71. The third wire 83 also has its first end located inside the light-transmitting resin 91, and its second end is located inside the light-shielding resin 92, passing through the interface between the light-transmitting resin 91 and the light-shielding resin 92. The third wire 83 is electrically connected to the light-receiving element 62 and the second switching element 72. A portion of each of the second wire 82 and the third wire 83 is located at the interface between the light-transmitting resin 91 and the light-shielding resin 92. In other words, each of the second wire 82 and the third wire 83 extends to pass through the interface between the light-transmitting resin 91 and the light-shielding resin 92.

[0085] As shown in Figures 2 and 3, the fourth wire 84 is entirely embedded in the light-transmitting resin 91. The fourth wire 84 is electrically connected to the light-receiving element 62 and the second die pad 31.

[0086] As shown in Figures 1 and 2, the fifth wire 85 and the sixth wire 86 are each entirely embedded in the light-shielding resin 92. The fifth wire 85 is electrically connected to the first switching element 71 and the connecting lead 32. The sixth wire 86 is electrically connected to the second switching element 72 and the connecting lead 32.

[0087] Certain wires 8 among the multiple wires 8 (in this embodiment, the second wire 82, the third wire 83, and the fourth wire 84) extend so as to intersect with the ends of the pad portion 10 in a plan view (see Figures 6 to 8). The second surface 102 is provided at the portion of the end of the pad portion 10 that intersects with the wires 8 in a plan view (the front end and the right end of the pad portion 10).

[0088] (1.2) Operation of the semiconductor relay When current flows between the first input terminal 1 and the second input terminal 2 in the semiconductor relay 100, the light-emitting element 61 emits light. The photoelectric conversion element 621 of the light-receiving element 62 receives this light and outputs a high-level output signal. As a result, the control circuit 622 outputs a high-level control signal, and the first switching element 71 and the second switching element 72 are turned on simultaneously (or synchronously). This causes conductivity between the first output terminal 4 and the second output terminal 5.

[0089] On the other hand, when current stops flowing between the first input terminal 1 and the second input terminal 2, the light-emitting element 61 in the semiconductor relay 100 stops emitting light, and the control signal from the control circuit 622 becomes low level. As a result, the control signal from the control circuit 622 becomes low level, and the first switching element 71 and the second switching element 72 are turned off simultaneously (or synchronously), interrupting the circuit between the first output terminal 4 and the second output terminal 5.

[0090] (1.3) Advantages of the Semiconductor Relay The advantages of the semiconductor relay 100 of this embodiment will be explained, including a comparison with the semiconductor relay of the comparative example. The semiconductor relay of the comparative example has basically the same configuration as the semiconductor relay 100 of this embodiment, but differs in that the pad portion 10 does not have a second surface 102. For the sake of explanation, in the following, elements of the semiconductor relay of the comparative example that correspond to elements of the semiconductor relay 100 of this embodiment may be denoted by the same reference numerals.

[0091] In the comparative semiconductor relay, as described above, the pad portion 10 does not have a second surface 102. Therefore, in the pad portion 10, the angle between the first surface 101 (bottom surface) and the side surface 103 is 90°. Also, in the comparative semiconductor relay, the outer edge of the upper surface of the translucent resin 91 is along the boundary between the first surface 101 and the side surface 103 of the pad portion 10.

[0092] Here, when a voltage is applied between the first input terminal 1 and the second input terminal 2 to allow current to flow through the light-emitting element 61, a discharge may occur between the pad portion 10 and the second die pad 31. Such a discharge is particularly likely to occur at the interface between the light-transmitting resin 91 and the light-shielding resin 92. In the comparative example semiconductor relay, the angle between the first surface 101 (bottom surface) and the side surface 103 of the pad portion 10 is 90°, so the electric field is concentrated at this corner, making discharge likely to occur.

[0093] In particular, when the portion including the pad portion 10 is formed by the first lead frame, when the first lead frame is manufactured by press working, a downward-projecting protrusion (so-called burr) may occur between the first surface 101 and the side surface 103. If there is a protrusion between the first surface 101 and the side surface 103, the electric field concentrates at the tip of the protrusion, making discharge even more likely.

[0094] On the other hand, in the semiconductor relay 100 of this embodiment, the angle θ1 between the first surface 111 and the second surface 112 within the first die pad 11 is obtuse. Also, the angle between the first surface 211 and the second surface 212 within the connecting piece 21 is obtuse. Therefore, compared to the semiconductor relay of the comparative example, the semiconductor relay 100 of this embodiment is less prone to electric field concentration at the corners of the pad portion 10, and less prone to discharge between the pad portion 10 and the second die pad 31. In short, the semiconductor relay 100 of this embodiment has the advantage of improving electrical insulation between the pad portion 10 (the light-emitting element side member) including the first die pad 11 and the second die pad 31 (the light-receiving element side member). Furthermore, in the semiconductor relay 100 of this embodiment, when the second surface 102 is formed by chamfering, the protrusion (burr) between the first surface 101 and the side surface 103 can be removed. This can further improve the electrical insulation between the pad portion 10, including the first die pad 11, and the second die pad 31.

[0095] Furthermore, in the semiconductor relay 100 of this embodiment, certain wires 8 (second wire 82, third wire 83, and fourth wire 84) extend so as to intersect with the ends of the pad portion 10 (first die pad 11 and connecting piece 21) in a plan view. The second surface 102 is provided at the portion of the pad portion 10's end that intersects with the wires 8. In other words, certain wires 8 extend so as to intersect with the second surface 102 (112, 212) in a plan view. When wires 8 extend so as to intersect with the ends of the pad portion 10 in a plan view, discharge may occur between the ends of the pad portion 10 and the wires 8. In contrast, in the semiconductor relay 100 of this embodiment, the provision of the second surface 102 at the portion of the pad portion 10's end that intersects with the wires 8 makes discharge less likely.

[0096] (2) Modifications The above embodiments are only one of many embodiments of the present disclosure. The above embodiments can be modified in various ways depending on the design, etc., as long as the objectives of the present disclosure are achieved. Modifications of the embodiments are listed below. The above embodiments and the modifications described below can be combined and applied as appropriate.

[0097] (2.1) Modification 1 In the semiconductor relay 100 of this modification, as shown in Figure 10, the second surface 112 of the first die pad 11 is a curved surface. Also, the second surface 212 of the connecting piece 21 is a curved surface. In short, the second surface 102 of the pad portion 10 is a curved surface. In this modification, the "angle between the first surface 111 and the second surface 112" can be defined, for example, as the interior angle between the line segment corresponding to the first surface 111 and the tangent to the line segment corresponding to the second surface 112 in the contour line of the first die pad 11 when viewed in a cross section (see Figure 10) that includes the thickness direction (vertical direction) of the first die pad 11.

[0098] Such a second surface 102 can be formed, for example, by R-processing (R-chamfering).

[0099] In this modified example, the upper surface of the first die pad 11 (and connecting piece 21) is also rounded to create a curved surface, and the lower curved surface and the upper curved surface are smoothly connected.

[0100] In this modified semiconductor relay 100, it is possible to improve the electrical insulation between the pad portion 10 including the first die pad 11 and the second die pad 31 compared to the semiconductor relay of the comparative example.

[0101] (2.2) Modification 2 In the semiconductor relay 100 of this modification, as shown in Figure 11, the first die pad 11 has a projection 118 that is located between the side surface 113 and the second surface 112 and protrudes laterally. Such a projection 118 can be formed, for example, when the second surface 112 is formed by chamfering. In this disclosure, "protruding laterally" is not limited to protruding horizontally, but may also include protruding diagonally upward.

[0102] In this modified semiconductor relay 100, it is possible to improve the electrical insulation between the pad portion 10 including the first die pad 11 and the second die pad 31 compared to the semiconductor relay of the comparative example.

[0103] The connecting piece 21 may also have a projection that is located between the side surface 213 and the second surface 212 and protrudes laterally.

[0104] Furthermore, in this modified example, the lower surface of the projection 118 is not covered with the translucent resin 91, but it may be covered.

[0105] (2.3) Modification 3 In the semiconductor relay 100 of this modification, as shown in Figure 12, the first die pad 11 has a protrusion 119 that is located between the first surface 111 and the second surface 112 and protrudes downward. Such a protrusion 119 can be formed, for example, when the second surface 112 is formed by chamfering.

[0106] In this modified semiconductor relay 100, it is possible to improve the electrical insulation between the pad portion 10 including the first die pad 11 and the second die pad 31 compared to the semiconductor relay of the comparative example.

[0107] The connecting piece 21 may also have a protrusion that is located between the first surface 211 and the second surface 212 and protrudes downward.

[0108] Furthermore, in this modified example, it is preferable that the entire protrusion 119 is covered with the translucent resin 91.

[0109] (2.4) Modification 4 In the semiconductor relay 100 of this modification, as shown in Figure 13, the second surface 112 of the first die pad 11 is covered with a translucent resin 91.

[0110] In this modified semiconductor relay 100, the portion of the first die pad 11 located at the interface between the light-transmitting resin 91 and the light-shielding resin 92 can be moved away from the second die pad 31. In other words, the insulation distance between the first die pad 11 and the second die pad 31 can be increased. This makes it possible to further improve the electrical insulation between the pad portion 10 including the first die pad 11 and the second die pad 31.

[0111] The second surface 212 of the connecting piece 21 may also be covered with the translucent resin 91.

[0112] (2.5) Modification 5 In the semiconductor relay 100 of this modification, as shown in Figure 14, in a plan view, the second surface 102 of the pad portion 10 surrounds the first surface 101 of the pad portion 10. In this disclosure, "in a plan view, the second surface 102 of the pad portion 10 surrounds the first surface 101 of the pad portion 10" means that in a plan view, the second surface 102 is provided over the entire outer edge portion of the lower surface of the pad portion 10.

[0113] According to this modified semiconductor relay 100, it is possible to improve the electrical insulation between the pad portion 10 and the second die pad 31 over the entire circumference of the pad portion 10.

[0114] In addition, in a plan view, the second surface 112 of the first die pad 11 may surround the first surface 111 of the first die pad 11. In other words, the second surface 112 may be provided around the entire circumference of the first die pad 11 (excluding the portion connected to the first input lead 12).

[0115] Furthermore, in a plan view, the second surface 212 of the connecting piece 21 may surround the first surface 211 of the connecting piece 21. In other words, the second surface 212 may be provided around the entire circumference of the connecting piece 21 (excluding the portion connected to the second input lead 22).

[0116] (2.6) Modification 6 In the semiconductor relay 100 of this modification, as shown in Figure 15, the second die pad 31 of the connection terminal 3 has a third surface 311 and a side surface 313. The third surface 311 is the top surface of the second die pad 31. The third surface 311 is a plane. The normal to the third surface 311 points upward. The third surface 311 faces the first die pad 11. A light-receiving element 62 is mounted on the third surface 311. The side surface 313 is a plane. The normal to the side surface 313 points sideways (perpendicular to the vertical direction).

[0117] Furthermore, in this modified semiconductor relay 100, the second die pad 31 further has a fourth surface 312. The fourth surface 312 is located at the end of the second die pad 31. The fourth surface 312 is located between the third surface 311 (top surface) and the side surface 313. The fourth surface 312 is planar. The normal to the fourth surface 312 points diagonally upward. The fourth surface 312 faces the first die pad 11. The fourth surface 312 extends along the edge of the third surface 311.

[0118] Furthermore, the angle between the third surface 311 and the fourth surface 312 within the second die pad 31 is obtuse. Also, the angle between the fourth surface 312 and the side surface 313 within the second die pad 31 is obtuse. Such a fourth surface 312 can be formed, for example, by chamfering.

[0119] In this modified semiconductor relay 100, the second die pad 31 has a fourth surface 312, which makes it possible to further improve the electrical insulation between the pad portion 10 including the first die pad 11 and the second die pad 31.

[0120] Furthermore, the shape of the second die pad 31, including the fourth surface 312, can be modified in various ways, as can be seen in the shape of the first die pad 11, including the second surface 112, in the above-described modifications 1 to 5.

[0121] Furthermore, it is preferable that the fourth surface 312 is provided at least at the portion of the end of the second die pad 31 that intersects with the wire 8 in a plan view.

[0122] Furthermore, in this modified example, the pad portion 10 (first die pad 11 and connecting piece 21) does not necessarily have to have a second surface 102 (112, 212).

[0123] One embodiment of the semiconductor relay 100 includes a light-emitting element 61, a light-receiving element 62, a first die pad 11, a second die pad 31, a light-transmitting resin 91, and a light-shielding resin 92. The light-receiving element 62 is located below the light-emitting element 61 and faces the light-emitting element 61. The first die pad 11 is on which the light-emitting element 61 is mounted and is electrically connected to the light-emitting element 61. The second die pad 31 is on which the light-receiving element 62 is mounted and is electrically connected to the light-receiving element 62. The light-transmitting resin 91 is located between the first die pad 11 and the second die pad 31 and covers the light-emitting element 61 and the light-receiving element 62. The light-shielding resin 92 covers the first die pad 11, the second die pad 31, and the light-transmitting resin 91. The second die pad has a third surface 311 and a fourth surface 312. The third surface 311 has a light-receiving element 62 mounted on it, faces the first die pad 11, and is covered with a light-transmitting resin 91. The fourth surface 312 faces the first die pad 11 and is located at the end of the second die pad 31. Within the second die pad 31, the angle between the third surface 311 and the fourth surface 312 is obtuse.

[0124] (2.7) Modification 7 In the semiconductor relay 100 of this modification, as shown in Figure 16, a projection 319 is provided at the end of the second die pad 31.

[0125] In this modified semiconductor relay 100, it is possible to improve the electrical insulation between the pad portion 10 including the first die pad 11 and the second die pad 31 compared to the semiconductor relay of the comparative example.

[0126] In this modified example, the projection 319 is covered with the translucent resin 91, but it does not need to be covered.

[0127] (3) Embodiments As can be seen from the above embodiments and modifications, the following embodiments are disclosed herein.

[0128] The semiconductor relay (100) of the first embodiment comprises a light-emitting element (61), a light-receiving element (62), a first die pad (11), a second die pad (31), a light-transmitting resin (91), and a light-shielding resin (92). The light-receiving element (62) is located below the light-emitting element (61) and faces the light-emitting element (61). The first die pad (11) is on which the light-emitting element (61) is mounted and is electrically connected to the light-emitting element (61). The second die pad (31) is on which the light-receiving element (62) is mounted and is electrically connected to the light-receiving element (62). The light-transmitting resin (91) is located between the first die pad (11) and the second die pad (31) and covers the light-emitting element (61) and the light-receiving element (62). The light-shielding resin (92) covers the first die pad (11), the second die pad (31), and the light-transmitting resin (91). The first die pad (11) has a first surface (111) and a second surface (112). The first surface (111) has a light-emitting element (61) on it, faces the second die pad (31), and is covered with the light-transmitting resin (91). The second surface (112) is connected to the first surface (111) and is located at the end of the first die pad (11). Within the first die pad (11), the angle (θ1) between the first surface (111) and the second surface (112) is obtuse.

[0129] According to this embodiment, it is possible to improve the electrical insulation between the first die pad (11) (the component on the light-emitting element (61) side) and the second die pad (31) (the component on the light-receiving element (62) side).

[0130] In the semiconductor relay (100) of the second embodiment, the second surface (112) of the first die pad (11) is covered with a translucent resin (91).

[0131] According to this embodiment, by covering the second surface (112) of the first die pad (11) with a translucent resin (91), the insulation distance between the first die pad (11) and the second die pad (31) can be increased, making it possible to further improve the electrical insulation between the first die pad (11) and the second die pad (31).

[0132] A semiconductor relay (100) in a third embodiment further comprises a wire (8) in the first or second embodiment. The wire (8) is electrically connected to a photodetector (62) and is located between a first die pad (11) and a second die pad (31). The wire (8) extends so as to intersect the second surface (112) in a plan view.

[0133] According to this embodiment, even when the wire (8) extends so as to intersect with the end of the first die pad (11), the provision of a second surface (112) at the end makes it possible to improve the electrical insulation between the first die pad (11) and the second die pad (31).

[0134] In the fourth embodiment of the semiconductor relay (100), in the third embodiment, the wire (8) extends so as to pass through the interface between the light-transmitting resin (91) and the light-shielding resin (92).

[0135] According to this embodiment, even when the wire (8) extends so as to intersect with the end of the first die pad (11), the provision of a second surface (112) at the end makes it possible to improve the electrical insulation between the first die pad (11) and the second die pad (31).

[0136] In the semiconductor relay (100) of the fifth embodiment, in any one of the first to fourth embodiments, in a plan view, the second surface (112) of the first die pad (11) surrounds the first surface (111) of the first die pad (11).

[0137] According to this embodiment, it is possible to improve the electrical insulation between the first die pad (11) and the second die pad (31) over the entire circumference of the first die pad (11).

[0138] In the semiconductor relay (100) of the sixth embodiment, in any one of the first to fifth embodiments, the first die pad (11) has a side surface (113) and a projection (118) located between the side surface (113) and the second surface (112) and projecting laterally.

[0139] According to this embodiment, it is possible to improve the electrical insulation between the first die pad (11) and the second die pad (31).

[0140] In the semiconductor relay (100) of the seventh embodiment, in any one of the first to sixth embodiments, the first die pad (11) has a convex portion (119) located between the first surface (111) and the second surface (112) and projecting downward, and the second surface (112) is connected to the first surface (111) via the convex portion (119).

[0141] According to this embodiment, it is possible to improve the electrical insulation between the first die pad (11) and the second die pad (31).

[0142] In the semiconductor relay (100) of the eighth embodiment, in any one of the first to seventh embodiments, the second surface (112) of the first die pad (11) is planar.

[0143] According to this embodiment, it is possible to improve the electrical insulation between the first die pad (11) and the second die pad (31).

[0144] In the semiconductor relay (100) of the ninth embodiment, in any one of the first to seventh embodiments, the second surface (112) of the first die pad (11) is a curved surface.

[0145] According to this embodiment, it is possible to improve the electrical insulation between the first die pad (11) and the second die pad (31).

[0146] In the semiconductor relay (100) of the tenth embodiment, in any one of the first to ninth embodiments, the second die pad (31) has a third surface (311) and a fourth surface (312). The third surface (311) has a light-receiving element (62) mounted on it, faces the first die pad (11), and is covered with a light-transmitting resin (91). The fourth surface (312) is connected to the third surface (311) and is located at the end of the second die pad (31). Within the second die pad (31), the angle between the third surface (311) and the fourth surface (312) is obtuse.

[0147] According to this embodiment, it is possible to further improve the electrical insulation between the first die pad (11) and the second die pad (31).

[0148] 100 Semiconductor relay 11 First die pad 111 First surface 112 Second surface 113 Side surface 118 Projection 119 Convex part 31 Second die pad 311 Third surface 312 Fourth surface 61 Light-emitting element 62 Light-receiving element 71 First switching element 72 Second switching element 8 Wire 91 Light-transmitting resin 92 Light-shielding resin θ1 Angle

Claims

Light-emitting element and A light-receiving element located below the light-emitting element and facing the light-emitting element, A first die pad on which the light-emitting element is mounted and electrically connected to the light-emitting element, A second die pad on which the light-receiving element is mounted and electrically connected to the light-receiving element, A translucent resin located between the first die pad and the second die pad, covering the light-emitting element and the light-receiving element, The device comprises the first die pad, the second die pad, and a light-shielding resin covering the light-transmitting resin, The first die pad is, The light-emitting element is mounted on a first surface which faces the second die pad and is covered with the translucent resin, It has a second surface which is connected to the first surface and is located at the end of the first die pad, Within the first die pad, the angle between the first surface and the second surface is obtuse. Semiconductor relay.   The second surface of the first die pad is covered with the translucent resin. The semiconductor relay according to claim 1.   The system further comprises a wire electrically connected to the light-receiving element and located between the first die pad and the second die pad, The wire extends so as to intersect the second surface in a plan view. The semiconductor relay according to claim 1 or 2.   The wire extends so as to pass through the interface between the light-transmitting resin and the light-shielding resin. The semiconductor relay according to claim 3.   In a plan view, the second surface of the first die pad surrounds the first surface of the first die pad. A semiconductor relay according to any one of claims 1 to 4.   The first die pad is, The side and, It has a projection that is located between the side surface and the second surface and protrudes laterally, A semiconductor relay according to any one of claims 1 to 5.   The first die pad has a protrusion that is located between the first surface and the second surface and protrudes downward, The second surface is connected to the first surface via the protrusion. A semiconductor relay according to any one of claims 1 to 6.   The second surface of the first die pad is a plane. A semiconductor relay according to any one of claims 1 to 7.   The second surface of the first die pad is a curved surface. A semiconductor relay according to any one of claims 1 to 7.   The aforementioned second die pad is The light-receiving element is mounted on a third surface that faces the first die pad and is covered with the light-transmitting resin, It has a fourth surface which is connected to the third surface and is located at the end of the second die pad, Within the second die pad, the angle between the third surface and the fourth surface is obtuse. A semiconductor relay according to any one of claims 1 to 9.

Citation Information

Patent Citations

  • Photo coupling semiconductor device

    JP1984130487A

  • Solid-state relay

    JP1992363074A

  • Photo-semiconductor device

    JP1998294487A

  • Optical semiconductor device and electronic apparatus using it

    JP2005159137A

  • Photocoupler

    JP2014056935A