Semiconductor device

Abstract

This semiconductor device comprises: a semiconductor element; a first conductive member separated from the semiconductor element in a first direction orthogonal to the thickness direction of the semiconductor element; a second conductive member having a first bonding section conductively bonded to the semiconductor element, a second bonding section conductively bonded to the first conductive member, and a first intermediate section positioned between the first bonding section and the second bonding section when viewed in the thickness direction and connected to both the first bonding section and the second bonding section; a third conductive member having a first main surface facing one side in the thickness direction, the semiconductor element being mounted on the first main surface; and a first auxiliary member having electrical insulation properties. The first auxiliary member is supported by the first main surface and can support the first intermediate section.

Description

Semiconductor device

[0001] The present disclosure relates to a semiconductor device.

[0002] Semiconductor devices provided with semiconductor elements have been proposed in various configurations. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a plurality of leads, a semiconductor element, and a plurality of conductive members. The plurality of conductive members include metal clips. The metal clips are joined to an electrode formed on the upper surface of the semiconductor element and a lead. When the width of the conductive member (metal clip) is narrow, the self-standing stability of the conductive member decreases, and there is a risk of falling due to vibrations during transportation or the like in the manufacturing process of the semiconductor device. There is concern that such a fall of the conductive member may cause a poor connection of the conductive member.

[0003] International Publication No. 2022 / 014387

[0004] [Summary] One problem of the present disclosure is to provide a semiconductor device that has been improved from the conventional one. In particular, in view of the above circumstances, one problem of the present disclosure is to provide a semiconductor device suitable for preventing a poor connection due to a fall or the like of a conductive member.

[0005] The semiconductor device provided by the first aspect of the present disclosure includes a semiconductor element, a first conductive member spaced apart from the semiconductor element in a first direction orthogonal to the thickness direction of the semiconductor element, a first joint portion electrically joined to the semiconductor element, a second joint portion electrically joined to the first conductive member, and a second conductive member having a first intermediate portion located between the first joint portion and the second joint portion when viewed in the thickness direction and connected to both the first joint portion and the second joint portion, a third conductive member having a first main surface facing one side in the thickness direction and on which the semiconductor element is mounted, and a first auxiliary member having electrical insulation. The first auxiliary member is supported on the first main surface and can support the first intermediate portion.

[0006] A semiconductor device provided by a second aspect of the present disclosure comprises a semiconductor element, a first conductive member spaced apart from the semiconductor element in a first direction perpendicular to the thickness direction of the semiconductor element, a second conductive member having a first joint conductively bonded to the semiconductor element and a second joint conductively bonded to the first conductive member, and a second auxiliary member. The second auxiliary member can be engaged with both the first conductive member and the second joint on both sides of the thickness direction and the second direction perpendicular to the first direction.

[0007] Other features and advantages of this disclosure will become more apparent from the detailed description below, with reference to the accompanying drawings.

[0008] Figure 1 is a perspective view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 2 is a perspective view of a main part showing a semiconductor device according to the first embodiment of the present disclosure. Figure 3 is a plan view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 4 is a plan view of a main part showing a semiconductor device according to the first embodiment of the present disclosure. Figure 5 is a bottom view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 6 is a side view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 7 is a front view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 8 is a cross-sectional view along the line VIII-VIII in Figure 4. Figure 9 is a cross-sectional view along the line IX-IX in Figure 4. Figure 10 is a cross-sectional view along the line X-X in Figure 4. Figure 11 is a cross-sectional view along the line XI-XI in Figure 4. Figure 12 is a cross-sectional view along the line XII-XII in Figure 4. Figure 13 is a partially enlarged view of a part of Figure 9. Figure 14 is a partially enlarged view of a part of Figure 10. Figure 15 is a partially enlarged view of a part of Figure 11. Figure 16 is a plan view of the main part of a semiconductor device according to a first modification of the first embodiment. Figure 17 is a cross-sectional view along the line XVII-XVII in Figure 16. Figure 18 is a partially enlarged view of a part of Figure 17. Figure 19 is a plan view of the main part of a semiconductor device according to a second modification of the first embodiment. Figure 20 is a cross-sectional view along the line XX-XX in Figure 19. Figure 21 is a cross-sectional view of a semiconductor device according to a third modification of the first embodiment. Figure 22 is a cross-sectional view of a semiconductor device according to a fourth modification of the first embodiment. Figure 23 is a cross-sectional view of a semiconductor device according to a fifth modification of the first embodiment. Figure 24 is a perspective view of the main part of a semiconductor device according to a second embodiment of the present disclosure. Figure 25 is a plan view of the main part of a semiconductor device according to a second embodiment of the present disclosure. Figure 26 is a cross-sectional view along the line XXVII-XXVII in Figure 25. Figure 27 is a cross-sectional view along the line XXVII-XXVII in Figure 25. Figure 28 is a cross-sectional view along the line XXVIII-XXVIII in Figure 25. Figure 29 is a cross-sectional view along the line XXIX-XXIX in Figure 25. Figure 30 is a partially enlarged view of a part of Figure 29. Figure 31 is a partially enlarged cross-sectional view showing a semiconductor device according to the first modification of the second embodiment. Figure 32 is a plan view of the main part showing a semiconductor device according to the second modification of the second embodiment.Figure 33 is a partially enlarged cross-sectional view taken along the line XXXIII-XXXIII in Figure 32. Figure 34 is a plan view of the main part showing a semiconductor device according to a third modified example of the second embodiment. Figure 35 is a cross-sectional view taken along the line XXXV-XXXV in Figure 34.

[0009] [Detailed Description] Preferred embodiments of this disclosure will be described below with reference to the drawings.

[0010] The terms "first," "second," "third," etc., used in this disclosure are merely labels and are not necessarily intended to assign a sequence to the objects.

[0011] In this disclosure, "object A is formed on object B" and "object A is formed on object B" include, unless otherwise specified, "object A is directly formed on object B" and "object A is formed on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" and "object A is located on object B" include, unless otherwise specified, "object A is directly located on object B" and "object A is located on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" includes, unless otherwise specified, "object A is located on object B in contact with object B" and "object A is located on object B with another object interposed between object A and object B." Furthermore, unless otherwise specified, "object A overlaps with object B when viewed in a certain direction" includes "object A overlapping with all of object B" and "object A overlapping with a part of object B." Also, in this disclosure, "a surface A facing direction B (one or the other side of it)" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is inclined with respect to direction B.

[0012] First Embodiment: Figures 1 to 11 show a semiconductor device according to the first embodiment of the present disclosure. The semiconductor device A10 of this embodiment comprises a first lead 11, a second lead 12, a third lead 13, a fourth lead 14, a semiconductor element 20, a plurality of conductive members 31, 32, 33, a first auxiliary member 40, and a sealing resin 50. The semiconductor device A10 further comprises a conductive bonding material 29, a conductive bonding material 39, and a bonding material 49. The application of the semiconductor device A10 is not limited in any way, and it can be used in electronic devices equipped with power conversion circuits, such as DC-DC converters.

[0013] Figure 1 is a perspective view showing semiconductor device A10. Figure 2 is a perspective view of the main part of semiconductor device A10, with the sealing resin 50 visible. Figure 3 is a plan view showing semiconductor device A10. Figure 4 is a plan view of the main part of semiconductor device A10, with the sealing resin 50 visible. Figure 5 is a bottom view showing semiconductor device A10. Figure 6 is a side view showing semiconductor device A10. Figure 7 is a front view showing semiconductor device A10. Figure 8 is a cross-sectional view along the line VIII-VIII in Figure 4. Figure 9 is a cross-sectional view along the line IX-IX in Figure 4. Figure 10 is a cross-sectional view along the line X-X in Figure 4. Figure 11 is a cross-sectional view along the line XI-XI in Figure 4. Figure 12 is a cross-sectional view along the line XII-XII in Figure 4. Figure 13 is a partially enlarged view of a part of Figure 9. Figure 14 is a partially enlarged view of a part of Figure 10. Figure 15 is a partially enlarged view of a part of Figure 11. In Figures 2 and 4, the permeated sealing resin 50 is shown by dashed lines.

[0014] In these figures, for example, the thickness direction (plan view direction) of the semiconductor element 20 is an example of the "thickness direction" in this disclosure and is referred to as the "thickness direction z". Also, for example, a direction orthogonal to the thickness direction z is an example of the "first direction" in this disclosure and is referred to as the "first direction x". Also, for example, a direction orthogonal to both the thickness direction z and the first direction x is an example of the "second direction" in this disclosure and is referred to as the "second direction y". Also, for example, one side of the thickness direction z is an example of the "one side of the thickness direction" in this disclosure and is referred to as the "z1 side of the thickness direction z", and the other side of the thickness direction z is an example of the "other side of the thickness direction" in this disclosure and is referred to as the "z2 side of the thickness direction z". Also, for example, one side of the first direction x is referred to as the "x1 side of the first direction x", and the other side of the first direction x is referred to as the "x2 side of the first direction x". For example, one side of the second direction y is called the "y1 side of the second direction y," and the other side of the second direction y is called the "y2 side of the second direction y." Note that terms such as "up," "down," "upper," "downward," "upper surface," and "lower surface" indicate the relative positional relationship of each component in the thickness direction z, and do not necessarily define a relationship with the direction of gravity.

[0015] As shown in Figures 1 to 5 and Figures 7 to 12, the first lead 11 has a base portion 111 and a terminal portion 112. The first lead 11 is a component on which the semiconductor element 20 is mounted and which forms part of the conductive path between the semiconductor element 20 and a wiring board (not shown) on which the semiconductor device A10 is mounted.

[0016] The first lead 11 may include, for example, copper (Cu) or a copper alloy. The first lead 11 may also have a surface metal layer, which is not shown. The surface metal layer may include, for example, Ag (silver), Ni (nickel), etc.

[0017] The base portion 111 has a first main surface 111A, a first back surface 111B, and a through hole 111C. The first main surface 111A faces the z1 side in the thickness direction z. The first back surface 111B faces the z2 side in the z direction. The through hole 111C penetrates the base portion 111 in the thickness direction z. The shape of the through hole 111C is not limited in any way, and in the illustrated example, it is circular when viewed in the thickness direction z.

[0018] As shown in Figures 4 and 9 to 11, a semiconductor element 20 is mounted on the first main surface 111A of the base portion 111. Furthermore, as will be described in detail later, a first auxiliary member 40 is supported on the first main surface 111A. The first lead 11 having such a first main surface 111A corresponds to the "third conductive member" of this disclosure.

[0019] The terminal portion 112 is connected to the base portion 111 and includes a portion that extends towards x1 in the first direction x. The base portion 111 and the terminal portion 112 are electrically connected to each other. A portion of the terminal portion 112 is covered with a sealing resin 50. The portion of the terminal portion 112 covered with the sealing resin 50 is bent when viewed in the second direction y. The surface of the portion of the terminal portion 112 exposed from the sealing resin 50 may be plated with, for example, tin (Sn).

[0020] As shown in Figures 1 to 5, 7 and 9, the second lead 12 is separated from the first lead 11 and positioned at a distance of y2 in the second direction y relative to the terminal portion 112 of the first lead 11. The second lead 12 is also positioned at a distance of x1 in the first direction x relative to the base portion 111 of the first lead 11 and the semiconductor element 20. The second lead 12 is electrically connected to the semiconductor element 20 via a conductive member 31. The second lead 12 has a pad portion 121 and a terminal portion 122. The pad portion 121 is covered with a sealing resin 50. The pad portion 121 may be plated with, for example, silver (Ag) plating, tin (Sn) plating, etc. The terminal portion 122 is connected to the pad portion 121. Part of the terminal portion 122 is covered with the sealing resin 50, and the other part is exposed from the sealing resin 50. The terminal portion 122 extends in the first direction x parallel to the terminal portion 112, for example. The surface of the terminal portion 122 may be plated with, for example, tin (Sn). The second lead 12 in the above configuration corresponds to the "first conductive member" in this disclosure.

[0021] As shown in Figures 1 to 5, 7 and 10, the third lead 13 is separated from the first lead 11 and the second lead 12, and is positioned at a distance from the second lead 12 on the y2 side in the second direction y. The third lead 13 is adjacent to the second lead 12 in the second direction y. The third lead 13 is also positioned at a distance from the base 111 and the semiconductor element 20 on the x1 side in the first direction x. The third lead 13 is electrically connected to the semiconductor element 20 via a conductive member 32. The third lead 13 has a pad portion 131 and a terminal portion 132. The pad portion 131 is covered with a sealing resin 50. The pad portion 131 may be plated with, for example, silver (Ag) plating, tin (Sn) plating, etc. The terminal portion 132 is connected to the pad portion 131. Part of the terminal portion 132 is covered with the sealing resin 50, and the other part is exposed from the sealing resin 50. The terminal portion 132 extends in a first direction x parallel to the terminal portions 112 and 122, for example. The surface of the terminal portion 132 may be plated with, for example, tin (Sn). The third lead 13 in the above configuration corresponds to the "first conductive member" of this disclosure.

[0022] As shown in Figures 1 to 5, 7 and 11, the fourth lead 14 is separated from the first lead 11, the second lead 12 and the third lead 13, and is positioned at a distance from the third lead 13 on the y2 side in the second direction y. In the second direction y, the fourth lead 14 is located on the opposite side of the second lead 12 from the third lead 13. The fourth lead 14 is also positioned at a distance from the base 111 and the semiconductor element 20 on the x1 side in the first direction x. The fourth lead 14 is electrically connected to the semiconductor element 20 via a conductive member 33. The fourth lead 14 has a pad portion 141 and a terminal portion 142. The pad portion 141 is covered with a sealing resin 50. The pad portion 141 may be plated with, for example, silver (Ag) plating, tin (Sn) plating, etc. The terminal portion 142 is connected to the pad portion 141. The terminal portion 142 is partially covered by the sealing resin 50, and the other portion is exposed from the sealing resin 50. The terminal portion 142 extends in a first direction x parallel to, for example, the terminal portions 112, 122, and 132. The surface of the terminal portion 142 may be plated with, for example, tin (Sn). The fourth lead 14 with the above configuration corresponds to the "first conductive member" of this disclosure.

[0023] As shown in Figures 2, 4, 9-11, and 13-15, the semiconductor element 20 is mounted on the first main surface 111A of the base 111. In the semiconductor device A10, the specific configuration of the semiconductor element 20 is not limited in any way. In this embodiment, the semiconductor element 20 is a switching element, for example, an n-channel, vertically structured MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). The semiconductor element 20 is not limited to a MOSFET. The semiconductor element 20 may be other transistors such as IGBTs (Insulated Gate Bipolar Transistors). Furthermore, the semiconductor element 20 may be an LSI (Large Scale Integration) or a diode. The semiconductor element 20 is rectangular when viewed in the thickness direction z. The shape, size, and arrangement of the semiconductor element 20 on the base 111 are not limited to the illustrated examples.

[0024] The semiconductor element 20 has a semiconductor layer 25, a first electrode 21, a second electrode 22, and a third electrode 23. The thickness of the semiconductor element 20 (dimension z in the thickness direction) is not particularly limited, and is, for example, about 100 μm or more and 1000 μm or less.

[0025] The semiconductor layer 25 includes a compound semiconductor substrate. The main material of the compound semiconductor substrate is silicon carbide (SiC). Alternatively, silicon (Si) may be used as the main material of the compound semiconductor substrate.

[0026] The first electrode 21 is positioned in the portion of the semiconductor layer 25 on the z1 side in the thickness direction z. A current corresponding to the power converted by the semiconductor element 20 flows through the first electrode 21. In this embodiment, the first electrode 21 is the source electrode.

[0027] The second electrode 22 is located in the portion of the semiconductor layer 25 on the z1 side in the thickness direction z. The second electrode 22 is located away from the first electrode 21. A voltage is applied to the second electrode 22 to drive the semiconductor element 20. In this embodiment, the second electrode 22 is a gate electrode. In the thickness direction z, the area of ​​the second electrode 22 is smaller than the area of ​​the first electrode 21. In the illustrated example, the second electrode 22 is located near the corner of the semiconductor element 20 on the x1 side in the first direction x and on the y2 side in the second direction y, when viewed in the thickness direction z.

[0028] The third electrode 23 is positioned in the portion of the semiconductor layer 25 on the z2 side in the thickness direction z. The third electrode 23 faces the first main surface 111A of the base portion 111 of the first lead 11. A current corresponding to the power before it is converted by the semiconductor element 20 flows through the third electrode 23. In this embodiment, the third electrode 23 is a drain electrode. The third electrode 23 is conductively bonded to the first main surface 111A via a conductive bonding material 29. The conductive bonding material 29 is, for example, solder, Ag (silver) paste, etc.

[0029] The first lead 11 is electrically connected to the third electrode 23 of the semiconductor element 20. Terminal 112 is the drain terminal of the semiconductor device A10. The second lead 12 is electrically connected to the first electrode 21 of the semiconductor element 20. Terminal 122 is the source terminal of the semiconductor device A10. The third lead 13 is electrically connected to the first electrode 21 of the semiconductor element 20. Terminal 132 is the source sense terminal of the semiconductor device A10. The fourth lead 14 is electrically connected to the second electrode 22 of the semiconductor element 20. Terminal 142 is the gate terminal of the semiconductor device A10.

[0030] As shown in Figures 4, 9, and 13, the conductive member 31 is electrically bonded to the first electrode 21 of the semiconductor element 20 and the pad portion 121 of the second lead 12. The conductive member 31 is made of, for example, a metal plate. The constituent material of the conductive member 31 includes, for example, Cu (copper). The conductive member 31 is a metal plate that has been appropriately bent. In the illustrated example, the conductive member 31 is a standard-length Cu clip (metal clip). The conductive member 31 extends with the first direction x as its longitudinal direction.

[0031] The conductive member 31 has a first joint portion 311, a second joint portion 312, and a first intermediate portion 313.

[0032] The first joint 311 is joined to the first electrode 21 (source electrode) via a conductive bonding material 39, and is the part that conductively bonds the conductive member 31 to the first electrode 21. The conductive bonding material 39 is, for example, solder, Ag (silver) paste, etc. In the illustrated example, the first joint 311 is located at the x2 side end of the conductive member 31 in the first direction x.

[0033] The second joint 312 is joined to the pad portion 121 of the second lead 12 via a conductive bonding material 39, and is the portion that electrically bonds the conductive member 31 to the second lead 12. The conductive bonding material 39 is, for example, solder, Ag (silver) paste, etc. In the illustrated example, the second joint 312 is located at the x1 side end of the conductive member 31 in the first direction x.

[0034] The first intermediate portion 313 is located between the first joint portion 311 and the second joint portion 312 when viewed in the thickness direction z. The first intermediate portion 313 connects to both the first joint portion 311 and the second joint portion 312. The portions of the first intermediate portion 313 that connect to the first joint portion 311 and the second joint portion 312 are bent when viewed in the second direction y. The portions of the first intermediate portion 313 other than the bent portions are along the xy plane and are located on the z1 side of the thickness direction z than the first joint portion 311 and the second joint portion 312. The conductive member 31 with the above configuration corresponds to the "second conductive member" of this disclosure.

[0035] As shown in Figures 4, 10, and 14, the conductive member 32 is electrically bonded to the first electrode 21 of the semiconductor element 20 and the pad portion 131 of the third lead 13. The conductive member 32 is positioned at a distance from the conductive member 31 on the y2 side of the second direction y. The conductive member 32 is made of, for example, a metal plate. The constituent material of the conductive member 32 includes, for example, Cu (copper). The conductive member 32 is a metal plate that has been appropriately bent. In the illustrated example, the conductive member 32 is a standard length Cu clip (metal clip). The conductive member 32 extends with the first direction x as its longitudinal direction. The dimension of the conductive member 32 in the second direction y is smaller than the dimension of the conductive member 31 in the second direction y.

[0036] The conductive member 32 has a first joint portion 321, a second joint portion 322, and a first intermediate portion 323.

[0037] The first joint 321 is joined to the first electrode 21 (source electrode) via a conductive bonding material 39, and is the part that conductively bonds the conductive member 32 to the first electrode 21. The conductive bonding material 39 is, for example, solder, Ag (silver) paste, etc. In the illustrated example, the first joint 321 is located at the x2 side end of the conductive member 32 in the first direction x.

[0038] The second joint 322 is joined to the pad portion 131 of the third lead 13 via a conductive bonding material 39, and is the portion that electrically bonds the conductive member 32 to the third lead 13. The conductive bonding material 39 is, for example, solder, Ag (silver) paste, etc. In the illustrated example, the second joint 322 is located at the x1 side end of the conductive member 32 in the first direction x.

[0039] The first intermediate portion 323 is located between the first joint portion 321 and the second joint portion 322 when viewed in the thickness direction z. The first intermediate portion 323 connects to both the first joint portion 321 and the second joint portion 322. The portions of the first intermediate portion 323 that connect to the first joint portion 321 and the second joint portion 322 are bent when viewed in the second direction y. The portions of the first intermediate portion 323 other than the bent portions are along the xy plane and are located on the z1 side of the thickness direction z than the first joint portion 321 and the second joint portion 322. The conductive member 32 with the above configuration corresponds to the "second conductive member" of this disclosure.

[0040] As shown in Figures 4, 11, and 15, the conductive member 33 is electrically bonded to the second electrode 22 of the semiconductor element 20 and the pad portion 141 of the fourth lead 14. The conductive member 33 is positioned at a distance from the conductive member 32 on the y2 side in the second direction y. The conductive member 33 is made of, for example, a metal plate. The constituent material of the conductive member 33 includes, for example, Cu (copper). The conductive member 33 is a metal plate that has been appropriately bent. In the illustrated example, the conductive member 33 is a standard length Cu clip (metal clip). The conductive member 33 extends with the first direction x as its longitudinal direction.

[0041] The conductive member 33 has a first joint portion 331, a second joint portion 332, and a first intermediate portion 333.

[0042] The first joint 331 is joined to the second electrode 22 (gate electrode) via a conductive bonding material 39, and is the part that conductively joins the conductive member 33 to the second electrode 22. The conductive bonding material 39 is, for example, solder, Ag (silver) paste, etc. In the illustrated example, the first joint 331 is located at the end of the conductive member 33 on the x2 side in the first direction x.

[0043] The second joint 332 is joined to the pad portion 141 of the fourth lead 14 via a conductive bonding material 39, and is the portion that electrically bonds the conductive member 33 to the fourth lead 14. The conductive bonding material 39 is, for example, solder, Ag (silver) paste, etc. In the illustrated example, the second joint 332 is located at the x1 side end of the conductive member 33 in the first direction x.

[0044] The first intermediate portion 333 is located between the first joint portion 331 and the second joint portion 332 when viewed in the thickness direction z. The first intermediate portion 333 is connected to both the first joint portion 331 and the second joint portion 332. The portions where the first intermediate portion 333 is connected to the first joint portion 331 and the second joint portion 332 respectively are bent when viewed in the second direction y. The portion of the first intermediate portion 333 other than the bent portion is along the xy plane and is located on the z1 side of the thickness direction z with respect to the first joint portion 331 and the second joint portion 332. The conductive member 33 having the above configuration corresponds to the "second conductive member" of the present disclosure.

[0045] As shown in FIG. 12, the portion of the first intermediate portion 313 other than the bent portion (the portion along the xy plane), the portion of the first intermediate portion 323 other than the bent portion (the portion along the xy plane), and the portion of the first intermediate portion 323 other than the bent portion (the portion along the xy plane) are at the same (or substantially the same) position in the thickness direction z.

[0046] As shown in FIGS. 2, 4, and 9 to 15, the first auxiliary member 40 is supported on the first main surface 111A of the base portion 111. The first auxiliary member 40 is at a position corresponding to the conductive members 31 to 33. The first auxiliary member 40 has electrical insulation properties. The first auxiliary member 40 is made of a material containing, for example, a black epoxy resin.

[0047] The first auxiliary member 40 has a first surface 40A and a second surface 40B. The first surface 40A faces the z1 side of the thickness direction z. The first surface 40A is a flat surface. The second surface 40B faces the z2 side of the thickness direction z (the side opposite to the first surface 40A). The second surface 40B is a flat surface. The second surface 40B is joined to the first main surface 111A via a joining material 49. The joining material 49 may be, for example, a conductive joining material such as solder or Ag (silver) paste, or may be an insulating joining material.

[0048] The first auxiliary member 40 extends along the second direction y and has a substantially rectangular parallelepiped shape in the present embodiment. As shown in FIGS. 9 to 12, a part of the first intermediate portion 313 of the conduction member 31 (the portion along the xy plane other than the bent portion), a part of the first intermediate portion 323 of the conduction member 32 (the portion along the xy plane other than the bent portion), and a part of the first intermediate portion 333 of the conduction member 33 (the portion along the xy plane other than the bent portion) are located on the z1 side in the thickness direction z with respect to the first surface 40A. The first auxiliary member 40 is located between a part of each of the first intermediate portions 313, 323, 333 and the first main surface 111A.

[0049] When manufacturing the semiconductor device A10, the first auxiliary member 40 is joined to the first main surface 111A of the base portion 111 by a joining material 49, and then the conduction members 31 to 33 are joined to the semiconductor element 20, the second lead 12, the third lead 13, and the fourth lead 14. As understood from FIGS. 9 to 15, each of the first intermediate portions 313, 323, 333 abuts on the first surface 40A (the first auxiliary member 40) or has a slight gap therebetween. Thereby, even if an external force that causes the first auxiliary member 40 to fall acts on the conduction members 31 to 33 during the manufacturing process of the semiconductor device A10, the first auxiliary member 40 can support each of the first intermediate portions 313, 323, 333 in the conduction members 31 to 33.

[0050] As shown in FIGS. 1 to 12, the encapsulating resin 50 covers the semiconductor element 20, the conduction members 31 to 33, the first auxiliary member 40, and a part of each of the first lead 11, the second lead 12, the third lead 13, and the fourth lead 14. The encapsulating resin 50 has electrical insulation properties. The encapsulating resin 50 is made of a material containing, for example, a black epoxy resin. The encapsulating resin 50 has a resin main surface 51, a resin back surface 52, a pair of first resin side surfaces 53, a pair of second resin side surfaces 54, a pair of openings 55, a mounting hole 56, and a recess 57.

[0051] The resin main surface 51 faces the z1 side in the thickness direction z. The resin back surface 52 faces the z2 side in the thickness direction z. The first back surface 111B of the base portion 111 is exposed from the resin back surface 52. The first back surface 111B and the resin back surface 52 are flush with each other.

[0052] The pair of first resin sides 53 are positioned apart from each other in the first direction x. The pair of first resin sides 53 are connected to the resin main surface 51 and the resin back surface 52. The terminal portion 112 of the first lead 11, the terminal portion 122 of the second lead 12, the terminal portion 132 of the third lead 13, and the terminal portion 142 of the fourth lead 14 protrude from the first resin side 53 facing the x1 side in the first direction x.

[0053] The pair of second resin side surfaces 54 are located apart from each other in the second direction y. The pair of second resin side surfaces 54 are connected to the resin main surface 51 and the resin back surface 52.

[0054] The pair of openings 55 are located apart from each other in the second direction y. Each of the pair of openings 55 is recessed inward into the sealing resin 50 from the resin main surface 51 and one of the pair of second resin side surfaces 54. A portion of the first main surface 111A of the base 111 of the first lead 11 is exposed through the pair of openings 55.

[0055] The mounting hole 56 penetrates the sealing resin 50 from the main resin surface 51 to the back surface 52 of the resin in the thickness direction z. In the thickness direction z, the mounting hole 56 is contained within the through hole 111C of the base portion 111 of the first lead 11. The inner circumferential surface of the base portion 111 that defines the through hole 111C is covered with the sealing resin 50. As a result, in the thickness direction z, the maximum dimension of the mounting hole 56 is smaller than the dimension of the through hole 111C.

[0056] The recess 57 is located between the terminal portion 112 and the terminal portion 122 in the second direction y. The recess 57 is recessed from the first resin side surface 53 located on the x1 side in the first direction x toward the x2 side in the first direction x.

[0057] Next, the operation of semiconductor device A10 will be explained.

[0058] The semiconductor device A10 includes a first auxiliary member 40 having electrical insulating properties. The first auxiliary member 40 is supported on the first main surface 111A of the first lead 11 and can also support the first intermediate portions 313, 323, and 333 of the conductive members 31, 32, and 33. With this configuration, it is possible to prevent the conductive members 31, 32, and 33, which are electrically bonded to the semiconductor element 20 and the second lead 12, third lead 13, and fourth lead 14, from tipping over, and to prevent bonding defects of the conductive members 31 to 33.

[0059] The first auxiliary member 40 extends in the second direction y. The semiconductor device A10 includes a plurality of second leads 12, third leads 13 and fourth leads 14 spaced apart from each other in the second direction y, and a plurality of conductive members 31, 32 and 33 spaced apart from each other in the second direction y. The first auxiliary member 40 can support the first intermediate portions 313, 323 and 333 of each of the plurality of conductive members 31, 32 and 33. With this configuration, it is possible to prevent the plurality of conductive members 31, 32 and 33 from tipping over collectively with a single first auxiliary member 40.

[0060] The first auxiliary member 40 has a first surface 40A facing the z1 side in the thickness direction z. At least a portion of each of the first intermediate portions 313, 323, and 333 of the conductive members 31, 32, and 33 is located on the z1 side in the thickness direction z with respect to the first surface 40A. With this configuration, the first intermediate portions 313, 323, and 333 (conductive members 31, 32, and 33) can be properly supported.

[0061] Figures 16 to 35 show modified examples and other embodiments of the present disclosure. In these figures, elements identical or similar to those in the above embodiments are denoted by the same reference numerals, and redundant explanations are omitted. Furthermore, the configurations of the parts in each modified example and each embodiment can be appropriately combined with each other to the extent that no technical inconsistencies arise.

[0062] First Modification of the First Embodiment: Figures 16 to 18 show a first modification of the semiconductor device A10. Figure 16 is a plan view of the main part of the semiconductor device A11 according to the first modification, with the sealing resin 50 transparent. Figure 17 is a cross-sectional view along the line XVII-XVII in Figure 16. Figure 18 is a partially enlarged view of a part of Figure 17. In Figure 16, the transparent sealing resin 50 is shown by dashed lines. In the semiconductor device A11 of this modification, the configuration of the first auxiliary member 40 differs from that of the semiconductor device A10 of the above embodiment.

[0063] In this modified example, the first auxiliary member 40 has a plurality of first recesses 41. Each of the plurality of first recesses 41 is recessed from the first surface 40A toward the z2 side in the thickness direction z. Also, each of the plurality of first recesses 41 penetrates in the first direction x. In this modified example, the first auxiliary member 40 has three first recesses 41 corresponding to each of the three conductive members 31 to 33. At least a portion of each of the first intermediate portions 313, 323, and 333 of the conductive members 31 to 33 is housed in one of the plurality of first recesses 41.

[0064] As shown in Figure 18, each of the plurality of first recesses 41 has a first bottom surface 411 and two first inner surfaces 412. The first bottom surface 411 faces the z1 side in the thickness direction z. The two first inner surfaces 412 are separated in the second direction y. Each of the two first inner surfaces 412 connects to the first surface 40A and the first bottom surface 411. The two first inner surfaces 412 are inclined such that as they move toward the z1 side in the thickness direction z, their distance from each other in the second direction y increases. The first auxiliary member 40 is made of, for example, a resin molded product, and the way in which the two first inner surfaces 412 are inclined with respect to the thickness direction z is due to the draft angle of the mold during resin molding. Note that the drawing is a conceptual representation of the first recess 41, and the inclination angle of the first inner surfaces 412 with respect to the thickness direction z is not limited to the illustrated example.

[0065] The semiconductor device A11 of this modified example includes a first auxiliary member 40 having electrical insulating properties. The first auxiliary member 40 is supported on the first main surface 111A of the first lead 11 and can also support the first intermediate portions 313, 323, and 333 of the conductive members 31, 32, and 33. With this configuration, it is possible to prevent the conductive members 31, 32, and 33, which are electrically bonded to the semiconductor element 20 and the second lead 12, third lead 13, and fourth lead 14, from tipping over, and to prevent bonding defects of the conductive members 31 to 33.

[0066] In this modified example, the first auxiliary member 40 has a plurality of first recesses 41. Each of the plurality of first recesses 41 is recessed from the first surface 40A toward the z2 side in the thickness direction z and penetrates in the first direction x. At least a portion of each of the first intermediate portions 313, 323, and 333 of the conductive members 31 to 33 is housed in the first recesses 41. With this configuration, improper movement of the conductive members 31 to 33 can be suppressed. As a result, the bonding state of the conductive members 31 to 33 is maintained in good condition. In addition, the semiconductor device A11 has the same effects as the semiconductor device A10 of the above embodiment.

[0067] Second Modification of the First Embodiment: Figures 19 and 20 show a second modification of the semiconductor device A10. Figure 19 is a plan view of the main part of the semiconductor device A12 according to the second modification, with the sealing resin 50 transparent. Figure 20 is a cross-sectional view along the line XX-XX in Figure 19. In Figure 19, the transparent sealing resin 50 is shown by dashed lines. In the semiconductor device A12 of this modification, the configuration of the first auxiliary member 40 differs from that of the semiconductor device A10 of the above embodiment.

[0068] In this modified example, the first auxiliary member 40 has a plurality of protrusions 42. Each of the plurality of protrusions 42 projects from the first surface 40A toward the z1 side in the thickness direction z. The plurality of protrusions 42 are spaced apart from each other in the second direction y. In this modified example, the plurality of protrusions 42 are provided at positions corresponding to the first intermediate portions 313, 323, and 333 of the conductive members 31 to 33, respectively. In this modified example, the first auxiliary member 40 has six protrusions 42. Of the six protrusions 42, two protrusions 42 are adjacent to both sides of the first intermediate portion 313 in the second direction y, the other two protrusions 42 are adjacent to both sides of the first intermediate portion 323 in the second direction y, and the remaining two protrusions 42 are adjacent to both sides of the first intermediate portion 333 in the second direction y. As a result, at least a portion of each of the first intermediate portions 313, 323, and 333 is located between two adjacent protrusions 42 in the second direction y.

[0069] The semiconductor device A12 of this modified example includes a first auxiliary member 40 having electrical insulating properties. The first auxiliary member 40 is supported on the first main surface 111A of the first lead 11 and can also support the first intermediate portions 313, 323, and 333 of the conductive members 31, 32, and 33. With this configuration, it is possible to prevent the conductive members 31, 32, and 33, which are electrically bonded to the semiconductor element 20 and the second lead 12, third lead 13, and fourth lead 14, from tipping over, and to prevent bonding defects of the conductive members 31 to 33.

[0070] In this modified example, the first auxiliary member 40 has a plurality of protrusions 42. Each of the plurality of protrusions 42 projects from the first surface 40A toward the z1 side in the thickness direction z, and at least a portion of each of the first intermediate portions 313, 323, 333 is located between two adjacent protrusions 42 in the second direction y. This configuration makes it possible to suppress improper movement of the conductive members 31 to 33. As a result, the bonding state of the conductive members 31 to 33 is maintained in good condition. In addition, the semiconductor device A12 has the same effects as the semiconductor device A10 in the above embodiment.

[0071] Third Modification of the First Embodiment: Figure 21 shows a third modification of the semiconductor device A10. Figure 21 is a cross-sectional view showing the semiconductor device A13 according to the third modification, and corresponds to the cross-section shown in Figure 12. In the semiconductor device A13 of this modification, the configuration of the first auxiliary member 40 differs from that of the semiconductor device A10 of the above embodiment.

[0072] In this modified example, the first auxiliary member 40 has one or more second recesses 43. In the illustrated example, each of the multiple (two) second recesses 43 of the first auxiliary member 40 is recessed from the second surface 40B toward the z1 side in the thickness direction z. Also, each of the multiple second recesses 43 penetrates in the first direction x. The multiple second recesses 43 are spaced apart from each other in the second direction y. The number of second recesses 43 is not limited in any way.

[0073] Each of the multiple second recesses 43 has a bottom surface 431 and two inner surfaces 432. The bottom surface 431 faces the z2 side in the thickness direction z. The two inner surfaces 432 are separated in the second direction y. Each of the two inner surfaces 432 connects to the second surface 40B and the bottom surface 431. The two inner surfaces 432 are inclined such that their distance from each other in the second direction y increases as they move toward the z2 side in the thickness direction z. The first auxiliary member 40 is made of, for example, a resin molded product, and the way in which the two inner surfaces 432 are inclined with respect to the thickness direction z is due to the draft angle of the mold during resin molding. Note that the drawing conceptually represents the second recess 43, and the inclination angle of the inner surfaces 432 with respect to the thickness direction z is not limited to the illustrated example.

[0074] The semiconductor device A13 of this modified example includes a first auxiliary member 40 having electrical insulating properties. The first auxiliary member 40 is supported on the first main surface 111A of the first lead 11 and can also support the first intermediate portions 313, 323, and 333 of the conductive members 31, 32, and 33. With this configuration, it is possible to prevent the conductive members 31, 32, and 33, which are electrically bonded to the semiconductor element 20 and the second lead 12, third lead 13, and fourth lead 14, from tipping over, and to prevent bonding defects of the conductive members 31 to 33.

[0075] In this modified example, the first auxiliary member 40 has one or more second recesses 43. Each of the one or more first recesses 41 is recessed from the second surface 40B toward the z1 side in the thickness direction z and penetrates in the first direction x. With this configuration, when forming the sealing resin 50, the inflow of resin material into the first auxiliary member 40 on both sides in the first direction x is improved. In addition, the semiconductor device A13 has the same effects as the semiconductor device A10 of the above embodiment.

[0076] Fourth Modification of the First Embodiment: Figure 22 shows a fourth modification of the semiconductor device A10. Figure 22 is a cross-sectional view showing the semiconductor device A14 according to the fourth modification, and corresponds to the cross-section shown in Figure 12. In the semiconductor device A14 of this modification, the configuration of the conductive members 32, 33 and the first auxiliary member 40 differs from that of the semiconductor device A10 of the above embodiment.

[0077] In this modified example, the first intermediate portion 323 of the conductive member 32 (the portion along the xy plane other than the bent portion) and the first intermediate portion 333 of the conductive member 33 (the portion along the xy plane other than the bent portion) are located on the z2 side of the thickness direction z than the first intermediate portion 313 of the conductive member 31 (the portion along the xy plane other than the bent portion). Accordingly, the first surface 40A of the first auxiliary member 40 includes a portion corresponding to the first intermediate portion 313 and portions corresponding to the first intermediate portion 323 and the first intermediate portion 333, and the portions corresponding to the first intermediate portion 323 and the first intermediate portion 333 are located on the z2 side of the thickness direction z than the portion corresponding to the first intermediate portion 313. That is, in the semiconductor device A14, the first surface 40A of the first auxiliary member 40 is provided with steps corresponding to the positions in the thickness direction z of the first intermediate portions 313, 323, and 333, respectively.

[0078] The semiconductor device A14 of this modified example includes a first auxiliary member 40 having electrical insulating properties. The first auxiliary member 40 is supported on the first main surface 111A of the first lead 11 and can also support the first intermediate portions 313, 323, and 333 of the conductive members 31, 32, and 33. With this configuration, it is possible to prevent the conductive members 31, 32, and 33, which are electrically bonded to the semiconductor element 20 and the second lead 12, third lead 13, and fourth lead 14, from tipping over, and to prevent bonding defects of the conductive members 31 to 33. In addition, the semiconductor device A14 has the same effects as the semiconductor device A10 of the above embodiment.

[0079] Fifth Modification of the First Embodiment: Figure 23 shows a fifth modification of the semiconductor device A10. Figure 23 is a cross-sectional view showing the semiconductor device A15 according to the fifth modification, and corresponds to the cross-section shown in Figure 12. In the semiconductor device A15 of this modification, the configuration of the first auxiliary member 40 differs from that of the semiconductor device A10 of the above embodiment.

[0080] In this modified example, the first auxiliary member 40 is located in a position corresponding to the conductive members 32 and 33. The length of the first auxiliary member 40 in the second direction y is shorter than the length of the first auxiliary member 40 in the second direction y in the semiconductor device A10. A portion of the first intermediate portion 323 of the conductive member 32 (the portion that follows the xy plane except for the bent portion) and a portion of the first intermediate portion 333 of the conductive member 33 (the portion that follows the xy plane except for the bent portion) are located on the z1 side of the thickness direction z with respect to the first surface 40A. The first auxiliary member 40 is located between a portion of each of the first intermediate portions 323 and 333 and the first main surface 111A. As a result, the first auxiliary member 40 can support the first intermediate portions 323 and 333 of the conductive members 32 and 33. On the other hand, the first auxiliary member 40 is not located between the first intermediate portion 313 and the first main surface 111A. Therefore, the first auxiliary member 40 may be configured to support the first intermediate portion (323, 333) of a part of the conductive members 31 to 33 (conductive members 32, 33). This modified example also provides the same effects as the semiconductor device A10 of the above embodiment.

[0081] Second Embodiment: Figures 24 to 30 show a semiconductor device according to the second embodiment of the present disclosure. Figure 24 is a perspective view of the main part of the semiconductor device A20 according to the present embodiment, with the sealing resin 50 transparent. Figure 25 is a plan view of the main part of the semiconductor device A20, with the sealing resin 50 transparent. Figure 26 is a cross-sectional view along the line XXVI-XXVI in Figure 25. Figure 27 is a cross-sectional view along the line XXVII-XXVII in Figure 25. Figure 28 is a cross-sectional view along the line XXVIII-XXVIII in Figure 25. Figure 29 is a cross-sectional view along the line XXIX-XXIX in Figure 25. Figure 30 is a partially enlarged view of a part of Figure 29. Note that in Figures 24 and 25, the transparent sealing resin 50 is shown by dashed lines.

[0082] In the semiconductor device A20 of this embodiment, a second auxiliary member 60 is provided in place of the first auxiliary member 40 of the above embodiment. The semiconductor device A20 comprises a plurality of second auxiliary members 60. The plurality of second auxiliary members 60 are individually arranged to correspond to the pad portions 121, 131, and 141 of the second lead 12, the third lead 13, and the fourth lead 14, and to the second joint portions 312, 322, and 332 of the conductive members 31 to 33, respectively. The semiconductor device A20 comprises three second auxiliary members 60. Specifically, the semiconductor device A20 comprises a second auxiliary member 60 corresponding to the pad portion 121 (second lead 12) and the second joint portion 312, another second auxiliary member 60 corresponding to the pad portion 131 (third lead 13) and the second joint portion 322, and yet another second auxiliary member 60 corresponding to the pad portion 141 (fourth lead 14) and the second joint portion 332.

[0083] As shown in Figure 30, the second auxiliary member 60 has two first wall portions 61 and a second wall portion 62. The two first wall portions 61 are located on the y1 side and the y2 side of the second direction y with respect to the pad portion 121 (131, 141) and the second joint portion 312 (322, 332). The second wall portion 62 connects to the z1 side end of each of the two first wall portions 61 in the thickness direction z. The second wall portion 62 overlaps the pad portion 121 (131, 141) and the second joint portion 312 (322, 332) when viewed in the thickness direction z. The second wall portion 62 abuts against the second joint portion 312 (322, 332). Furthermore, each of the two first wall portions 61 overlaps the pad portion 121 (131, 141) and the second joint portion 312 (322, 332) when viewed in the second direction y.

[0084] In the illustrated example, the length of the pad portion 121 (131, 141) in the second direction y is longer than the length of the second joint portion 312 (322, 332) in the second direction y. Each of the two first wall portions 61 either abuts against the pad portion 121 (131, 141) between them in the second direction y, or there is a small gap between them and the pad portion 121 (131, 141). As a result, the second auxiliary member 60 (first wall portion 61) can engage with both the pad portion 121 (131, 141) and the second joint portion 312 (322, 332) on both sides (y1 side and y2 side) in the second direction y.

[0085] In this embodiment, the second auxiliary member 60 has electrical insulating properties. The second auxiliary member 60 is made of a material including, for example, black epoxy resin. In contrast to this embodiment, the second auxiliary member 60 may be made of a conductive material such as a metal plate.

[0086] As shown in Figure 30, in the second auxiliary member 60, each of the two first wall portions 61 has a second inner surface 611 that faces each other. The second inner surface 611 of each of the two first wall portions 61 is inclined such that the distance between them in the second direction y increases as they move toward the z2 side of the thickness direction z. The second auxiliary member 60 is made of, for example, a resin molded product, and the way in which the two second inner surface 611 are inclined with respect to the thickness direction z is due to the draft angle of the mold during resin molding. Note that the drawing is a conceptual representation of the second auxiliary member 60, and the inclination angle of the second inner surface 611 with respect to the thickness direction z is not limited to the illustrated example.

[0087] Next, the operation of semiconductor device A20 will be explained.

[0088] The semiconductor device A20 includes a second auxiliary member 60. The second auxiliary member 60 can be engaged with the pad portion 121 (131, 141) and the second joint portion 312 (322, 332) on both sides (y1 side and y2 side) in the second direction y. With this configuration, it is possible to prevent the conductive members 31 (32, 33) which are conductively joined to the semiconductor element 20 and the second lead 12, third lead 13 and fourth lead 14 from tipping over, and to prevent poor joining of the conductive members 31 (32, 33).

[0089] The semiconductor device A20 comprises a plurality of second leads 12, a third lead 13, and a fourth lead 14 spaced apart from each other in a second direction y, a plurality of conductive members 31, 32, and 33 spaced apart from each other in a second direction y, and a plurality of second auxiliary members 60. The plurality of second auxiliary members 60 are individually arranged to correspond to the pad portions 121, 131, and 141 of the second leads 12, the third lead 13, and the fourth lead 14, and the second joint portions 312, 322, and 332 of the conductive members 31 to 33, respectively. With this configuration, it is possible to prevent each of the plurality of conductive members 31, 32, and 33 from tipping over.

[0090] First Modification of the Second Embodiment: Figure 31 shows a first modification of the semiconductor device A20. Figure 31 is a partially enlarged cross-sectional view showing the semiconductor device A21 according to the first modification, and corresponds to the cross-section shown in Figure 30. The semiconductor device A21 of this modification further comprises a first bonding material 70.

[0091] The first bonding material 70 is interposed between the second joint portion 312 (322, 332) and the second wall portion 62, and is bonded to the second joint portion 312 (322, 332) and the second wall portion 62. The first bonding material 70 may be a conductive bonding material such as solder or Ag (silver) paste, or it may be an insulating bonding material.

[0092] The semiconductor device A21 includes a second auxiliary member 60. The second auxiliary member 60 can be engaged with the pad portion 121 (131, 141) and the second joint portion 312 (322, 332) on both sides (y1 side and y2 side) in the second direction y. With this configuration, it is possible to prevent the conductive members 31 (32, 33) which are conductively bonded to the semiconductor element 20 and the second lead 12, third lead 13 and fourth lead 14 from tipping over, and to prevent bonding defects of the conductive members 31 (32, 33).

[0093] The semiconductor device A21 of this modified example further comprises a first bonding member 70. The first bonding member 70 is bonded to the second bonding portion 312 (322, 332) and the second wall portion 62. This configuration makes it possible to suppress improper movement of the second bonding portion 312 (322, 332). As a result, the bonding state of the conductive members 31 (32, 33) is maintained in good condition. In addition, the semiconductor device A21 provides the same effects as the semiconductor device A20 of the above embodiment.

[0094] Second Modification of the Second Embodiment: Figures 32 and 33 show a second modification of the semiconductor device A20. Figure 32 is a plan view of the main part of the semiconductor device A22 according to the second modification, with the sealing resin 50 transparent. Figure 33 is a partially enlarged cross-sectional view along the line XXXIII-XXXIII in Figure 32. In Figure 32, the transparent sealing resin 50 is shown by dashed lines. In the semiconductor device A22 of this modification, the configuration of the second auxiliary member 60 differs from that of the semiconductor device A20 of the above embodiment.

[0095] The semiconductor device A22 of this modified example includes one second auxiliary member 60. The second auxiliary member 60 has electrical insulating properties. The second auxiliary member 60 is positioned corresponding to the pad portions 121, 131, and 141 of the second lead 12, the third lead 13, and the fourth lead 14, and the second joint portions 312, 322, and 332 of the conductive members 31 to 33.

[0096] As shown in Figure 33, in the semiconductor device A22, the second auxiliary member 60 has a plurality of third wall portions 63 and a fourth wall portion 64. In the illustrated example, the second auxiliary member 60 has four third wall portions 63. These four third wall portions 63 are located on the y1 side of the second direction y of the pad portion 121, between the pad portion 121 and the pad portion 131 in the second direction y, between the pad portion 131 and the pad portion 141 in the second direction y, and on the y2 side of the pad portion 141 in the second direction y. The fourth wall portion 64 connects to the z1 side end of each of the four third wall portions 63 in the thickness direction z. The fourth wall portion 64 overlaps the pad portion 121 and the second joint portion 312, the pad portion 131 and the second joint portion 322, and the pad portion 141 and the second joint portion 332 when viewed in the thickness direction z. The fourth wall portion 64 is in contact with the second joint portions 312, 322, and 332.

[0097] The two third wall portions 63 adjacent to the pad portion 121 and the second joint portion 312 on both sides (y1 side and y2 side) in the second direction y overlap the pad portion 121 and the second joint portion 312 when viewed in the second direction y. Each of the two third wall portions 63 is in contact with the pad portion 121 or has a small gap between it and the pad portion 121. As a result, the two third wall portions 63 can engage with both the pad portion 121 and the second joint portion 312 on both sides (y1 side and y2 side) in the second direction y.

[0098] The two third wall portions 63 adjacent to the pad portion 131 and the second joint portion 322 on both sides (y1 side and y2 side) in the second direction y overlap the pad portion 131 and the second joint portion 322 when viewed in the second direction y. Each of the two third wall portions 63 is in contact with the pad portion 131 or has a small gap between it and the pad portion 131. As a result, the two third wall portions 63 can engage with both the pad portion 131 and the second joint portion 322 on both sides (y1 side and y2 side) in the second direction y.

[0099] The two third wall portions 63 adjacent to the pad portion 141 and the second joint portion 332 on both sides (y1 side and y2 side) in the second direction y overlap the pad portion 141 and the second joint portion 332 when viewed in the second direction y. Each of the two third wall portions 63 is in contact with the pad portion 141 or has a small gap between it and the pad portion 141. As a result, the two third wall portions 63 can engage with both the pad portion 141 and the second joint portion 332 on both sides (y1 side and y2 side) in the second direction y.

[0100] As shown in Figure 33, in the second auxiliary member 60, two adjacent third wall portions 63 in the second direction y each have a third inner surface 631 facing each other. The third inner surface 631 of each of the two adjacent third wall portions 63 in the second direction y is inclined such that the distance between them in the second direction y increases as they move toward the z2 side of the thickness direction z. The second auxiliary member 60 is made of, for example, a resin molded product, and the manner in which the opposing third inner surface 631 are inclined with respect to the thickness direction z is due to the draft angle of the mold during resin molding. Note that the drawing is a conceptual representation of the second auxiliary member 60, and the inclination angle of the third inner surface 631 with respect to the thickness direction z is not limited to the illustrated example.

[0101] The semiconductor device A22 includes a second auxiliary member 60. The second auxiliary member 60 can be engaged with both the pad portion 121 (131, 141) and the second joint portion 312 (322, 332) on both sides (y1 side and y2 side) in the second direction y. With this configuration, it is possible to prevent the conductive members 31 (32, 33) which are conductively joined to the semiconductor element 20 and the second lead 12, third lead 13 and fourth lead 14 from tipping over, and to prevent poor joining of the conductive members 31 (32, 33).

[0102] The semiconductor device A22 comprises a plurality of second leads 12, a third lead 13, and a fourth lead 14 spaced apart from each other in a second direction y, a plurality of conductive members 31, 32, and 33 spaced apart from each other in a second direction y, and a second auxiliary member 60. The second auxiliary member 60 has electrical insulating properties and is arranged corresponding to the pad portions 121, 131, and 141 of the second leads 12, the third lead 13, and the fourth lead 14, and the second joint portions 312, 322, and 332 of the conductive members 31 to 33. With this configuration, it is possible to prevent the multiple conductive members 31, 32, and 33 from tipping over collectively with a single second auxiliary member 60.

[0103] Third Modification of the Second Embodiment: Figures 34 and 35 show a third modification of the semiconductor device A20. Figure 34 is a plan view of the main part of the semiconductor device A23 according to the third modification, and the sealing resin 50 is transparent. Figure 35 is a cross-sectional view along the line XXXV-XXXV in Figure 34. In Figure 34, the transparent sealing resin 50 is shown by dashed lines. The semiconductor device A20 of the above embodiment had three semiconductor devices A20, but the semiconductor device A23 of this modification has two second auxiliary members 60.

[0104] In this modified example, the semiconductor device A23 includes a second auxiliary member 60 corresponding to the pad portion 131 (third lead 13) and the second joint portion 322 (conducting member 32), and other second auxiliary members 60 corresponding to the pad portion 141 (fourth lead 14) and the second joint portion 332 (conducting member 33). On the other hand, in this modified example, the second auxiliary member 60 is not provided for the pad portion 121 (second lead 12) and the second joint portion 312 (conducting member 31). Thus, the second auxiliary members 60 may be individually arranged to correspond to some of the multiple second leads 12, third leads 13, fourth leads 14 and conductive members 31 to 33.

[0105] The semiconductor device relating to this disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor device relating to this disclosure can be modified in various ways.

[0106] This disclosure includes the implementation configuration described in the following appendix. Appendix 1. A semiconductor element (20); a first conductive member (13) separated from the semiconductor element (20) in a first direction (x) perpendicular to the thickness direction (z) of the semiconductor element (20); a second conductive member (32) having a first joint (321) conductively bonded to the semiconductor element (20), a second joint (322) conductively bonded to the first conductive member (13), and a first intermediate portion (323) located between the first joint (321) and the second joint (322) when viewed in the thickness direction (z), and connected to both the first joint (321) and the second joint (322); a third conductive member (11) having a first main surface (111A) facing one side (z1 side) of the thickness direction (z), on which the semiconductor element (20) is mounted; A semiconductor device (A10, A11, A12, A13, A14, A15) comprising an electrically insulating first auxiliary member (40), wherein the first auxiliary member (40) is supported on the first main surface (111A) and can support the first intermediate portion (323). Note 2. The semiconductor device (A10, A11, A12, A13, A14, A15) according to Note 1, wherein the first auxiliary member (40) extends in a second direction (y) perpendicular to the thickness direction (z) and the previous first direction (x). Note 3. The semiconductor device (A10, A12, A13, A14, A15) described in Appendix 2, wherein the first auxiliary member (40) has a first surface (40A) facing one side (z1 side) in the thickness direction (z), and at least a portion of the first intermediate portion (323) is located on one side (z1 side) in the thickness direction (z) with respect to the first surface (40A). Appendix 4. The semiconductor device (A11) described in Appendix 2, wherein the first auxiliary member (40) has a first surface (40A) facing one side (z1 side) in the thickness direction (z), and a first recess (41) that is recessed from the front first surface (40A) to the other side (z2 side) in the thickness direction (z) and penetrates in the front first direction (x), and at least a portion of the first intermediate portion (323) is housed in the first recess (41).Note 5. The semiconductor device (A11) described in Note 4, wherein the first recess (41) is located on the other side (z2 side) in the thickness direction (z) than the first surface (40A) and has a first bottom surface (411) facing one side (z1 side) in the thickness direction (z), and two first inner surfaces (412) each connected to the first surface (40A) and the first bottom surface (411) and separated in the second direction (y), and the two first inner surfaces (412) are inclined such that the distance between them in the second direction (y) increases as they move toward one side (z1 side) in the thickness direction (z). Note 6. The semiconductor device (A12) described in Appendix 3, wherein each of the first auxiliary members (40) has a plurality of projections (42) that protrude from the first surface (40A) to one side (z1 side) in the thickness direction (z) and are spaced apart from each other in the second direction (y), and at least a portion of the first intermediate portion (323) is located between two adjacent projections (42) in the second direction (y). Appendix 7. A semiconductor device (A10, A11, A12, A13, A14, A15) according to any one of the appendices 2 to 6, comprising: a plurality of first conductive members (12, 13, 14) spaced apart from each other in the second direction (y); and a plurality of second conductive members (31, 32, 33) spaced apart from each other in the second direction (y), wherein the first auxiliary member (40) is capable of supporting the first intermediate portions (313, 323, 333) of each of the plurality of second conductive members (31, 32, 33). Appendix 8. The semiconductor device (A13) according to Appendix 2, wherein the first auxiliary member (40) has a second surface (40B) facing the other side (z2 side) in the thickness direction (z) and facing the first main surface (111A), and one or more second recesses (43) that are recessed from the second surface (40B) toward one side (z1 side) in the thickness direction (z) and penetrate in the first direction (x).Note 9. The semiconductor device (A10, A11, A12, A13, A14, A15) described in any of Notes 2 to 8, wherein the semiconductor device (20) is a switching element having a drain electrode (23), a source electrode (21), and a gate electrode (22), and comprises three first conductive members (12, 13, 14) spaced apart from each other in the second direction (y), and three second conductive members (31, 32, 33) spaced apart from each other in the second direction (y), and one of the second conductive members (33) is electrically bonded to the gate electrode (22), and the other two second conductive members (31, 32) are electrically bonded individually to the source electrode (21). Note 10. A semiconductor device (A20, A21, A22, A23) comprises: a semiconductor element (20); a first conductive member (13) separated from the semiconductor element (20) in a first direction (x) perpendicular to the thickness direction (z) of the semiconductor element (20); a second conductive member (32) having a first joint (321) conductively bonded to the semiconductor element (20) and a second joint (322) conductively bonded to the first conductive member (13); and a second auxiliary member (60), wherein the second auxiliary member (60) can engage with both the first conductive member (13) and the second joint (322) on both sides (y1 side and y2 side) of the second conductive member (13) and the second joint (322) perpendicular to the thickness direction (z) and the first direction (x). (Note 11) The second auxiliary member (60) has two first wall portions (61) located on one side (y1 side) and the other side (y2 side) of the second direction (y) with respect to the first conductive member (13) and the second joint (322), and a second wall portion (62) connected to the end of each of the two first wall portions (61) on one side (z1 side) of the thickness direction (z) and overlapping the first conductive member (13) and the second joint (322) when viewed in the thickness direction (z), and each of the two first wall portions (61) overlaps the first conductive member (13) and the second joint (322) when viewed in the second direction (y), as described in Appendix 10 (A20, A21, A23).Note 12. The semiconductor device (A20, A21, A22) according to Note 11, wherein each of the two first wall portions (61) has a second inner surface (611) facing each other, and the second inner surface (611) of each of the two first wall portions (61) is inclined such that the distance between them in the second direction (y) increases as they move toward the other side (z2 side) of the thickness direction (z). Note 13. The semiconductor device (A21) according to Note 11 or 12, further comprising a first bonding material (70) interposed between the second bonding portion (322) and the second wall portion (62) in the thickness direction (z), and bonded to the second bonding portion (322) and the second wall portion (62). Note 14. The semiconductor device (A20, A21, A22, A23) described in any of appendices 10 to 13, wherein the second auxiliary member (60) is electrically insulating. Appendix 15. The semiconductor device (A20, A21) described in appendice 10, comprising a plurality of first conductive members (12, 13, 14) spaced apart from each other in the second direction (y), a plurality of second conductive members (31, 32, 33) spaced apart from each other in the second direction (y), and a plurality of second auxiliary members (60), wherein the plurality of second auxiliary members (60) are individually arranged corresponding to the plurality of first conductive members (12, 13, 14) and the plurality of second conductive members (31, 32, 33). Appendix 16. The semiconductor device (A22) described in Appendix 10 comprises a plurality of first conductive members (12, 13, 14) spaced apart from each other in the second direction (y), and a plurality of second conductive members (31, 32, 33) spaced apart from each other in the second direction (y), wherein the second auxiliary member (60) has electrical insulating properties and is arranged in correspondence with the plurality of first conductive members (12, 13, 14) and the plurality of second conductive members (31, 32, 33).Note 17. The semiconductor device (A20, A21, A22, A23) according to any one of Notes 10 to 16, wherein the semiconductor device (20) is a switching device having a drain electrode (23), a source electrode (21), and a gate electrode (22), and comprises three first conductive members (12, 13, 14) spaced apart from each other in the second direction (y), and three second conductive members (31, 32, 33) spaced apart from each other in the second direction (y), and one of the second conductive members (33) is electrically bonded to the gate electrode (22), and the other two second conductive members (31, 32) are electrically bonded individually to the source electrode (21).

[0107] A10, A11, A12, A13, A14, A15, A20, A21, A22, A23: Semiconductor device, 11: First lead (third conductive member), 111: Base, 111A: First main surface, 111B: First back surface, 111C: Through hole, 112: Terminal portion, 12: Second lead (first conductive member), 121: Pad portion, 122: Terminal portion, 13: Third lead (first conductive member), 131: Pad portion, 132: Terminal portion, 14: Fourth lead (first conductive member), 141: Pad portion, 142: Terminal portion, 20: Semiconductor element, 21: First electrode (source electrode), 22: Second electrode (gate electrode), 23: Third electrode (drain electrode), 25: Semiconductor layer, 29: Conductive bonding material, 31, 32, 33: Conductive member (second conductive member), 311, 321, 331: First joint, 312, 322, 332: Second joint, 313, 323, 333: First intermediate part, 39: Conductive bonding material, 40: First auxiliary member, 41: First recess, 411: First bottom surface, 412: First inner surface, 42: Protrusion, 43: Second recess, 431: Bottom surface, 432: Inner Side view, 49: bonding material, 50: sealing resin, 51: main resin surface, 52: back surface of resin, 53: first resin side view, 54: first resin side view, 55: opening, 56: mounting hole, 57: recess, 60: second auxiliary member, 61: first wall section, 611: second inner side view, 62: second wall section, 63: third wall section, 631: third inner side view, 64: fourth wall section, 70: first bonding material

Claims

1. A semiconductor device comprising: a semiconductor element; a first conductive member spaced apart from the semiconductor element in a first direction perpendicular to the thickness direction of the semiconductor element; a second conductive member having a first joint portion conductively bonded to the semiconductor element, a second joint portion conductively bonded to the first conductive member, and a first intermediate portion located between the first joint portion and the second joint portion in the thickness direction and connected to both the first joint portion and the second joint portion; a third conductive member having a first main surface facing one side in the thickness direction, on which the semiconductor element is mounted; and a first auxiliary member having electrical insulating properties, wherein the first auxiliary member is supported by the first main surface and can support the first intermediate portion.

2. The semiconductor device according to claim 1, wherein the first auxiliary member extends in the thickness direction and in a second direction perpendicular to the first direction.

3. The semiconductor device according to claim 2, wherein the first auxiliary member has a first surface facing one side in the thickness direction, and at least a portion of the first intermediate portion is located on one side in the thickness direction with respect to the first surface.

4. The semiconductor device according to claim 2, wherein the first auxiliary member has a first surface facing one side in the thickness direction and a first recess that is recessed from the first surface to the other side in the thickness direction and penetrates in the first direction, and at least a part of the first intermediate portion is housed in the first recess.

5. The semiconductor device according to claim 4, wherein the first recess has a first bottom surface located on the other side in the thickness direction from the first surface and facing one side in the thickness direction, and two first inner surfaces, each connected to the first surface and the first bottom surface and separated in the second direction, and the two first inner surfaces are inclined such that the distance between them in the second direction increases as they move toward one side in the thickness direction with respect to the thickness direction.

6. The semiconductor device according to claim 3, wherein the first auxiliary member has a plurality of projections, each projecting from the first surface to one side in the thickness direction and spaced apart from each other in the second direction, and at least a portion of the first intermediate portion is located between two adjacent projections in the second direction.

7. A semiconductor device according to any one of claims 2 to 6, comprising a plurality of first conductive members spaced apart from each other in the second direction, and a plurality of second conductive members spaced apart from each other in the second direction, wherein the first auxiliary member is capable of supporting the first intermediate portion of each of the plurality of second conductive members.

8. The semiconductor device according to claim 2, wherein the first auxiliary member has a second surface facing the other side in the thickness direction and facing the first main surface, and one or more second recesses that are recessed from the second surface toward one side in the thickness direction and penetrate in the first direction.

9. The semiconductor device according to any one of claims 2 to 8, wherein the semiconductor element is a switching element having a drain electrode, a source electrode, and a gate electrode, and comprises three first conductive members spaced apart from each other in the second direction, and three second conductive members spaced apart from each other in the second direction, one of the second conductive members being electrically bonded to the gate electrode, and the other two second conductive members being electrically bonded individually to the source electrode.

10. A semiconductor device comprising: a semiconductor element; a first conductive member spaced apart from the semiconductor element in a first direction perpendicular to the thickness direction of the semiconductor element; a second conductive member having a first joint portion conductively bonded to the semiconductor element and a second joint portion conductively bonded to the first conductive member; and a second auxiliary member, wherein the second auxiliary member can be engaged with both the first conductive member and the second joint portion on both sides in the second direction perpendicular to the thickness direction and the first direction.

11. The semiconductor device according to claim 10, wherein the second auxiliary member has two first wall portions located on one side in the second direction and the other side in the second direction with respect to the first conductive member and the second joint, and a second wall portion connected to one end of each of the two first wall portions in the thickness direction and overlapping the first conductive member and the second joint when viewed in the thickness direction, and each of the two first wall portions overlaps the first conductive member and the second joint when viewed in the second direction.

12. The semiconductor device according to claim 11, wherein each of the two first wall portions has a second inner surface facing each other, and the second inner surfaces of each of the two first wall portions are inclined such that the distance between them in the second direction increases as they move toward the other side of the thickness direction with respect to the thickness direction.

13. The semiconductor device according to claim 11 or 12, further comprising a first bonding material interposed between the second joint and the second wall in the thickness direction and bonded to the second joint and the second wall.

14. The semiconductor device according to any one of claims 10 to 13, wherein the second auxiliary member has electrical insulating properties.

15. The semiconductor device according to claim 10, comprising: a plurality of first conductive members spaced apart from each other in the second direction; a plurality of second conductive members spaced apart from each other in the second direction; and a plurality of second auxiliary members, wherein the plurality of second auxiliary members are individually arranged corresponding to the plurality of first conductive members and the plurality of second conductive members.

16. The semiconductor device according to claim 10, comprising a plurality of first conductive members spaced apart from each other in the second direction, and a plurality of second conductive members spaced apart from each other in the second direction, wherein the second auxiliary member has electrical insulating properties and is arranged in correspondence with the plurality of first conductive members and the plurality of second conductive members.

17. The semiconductor device according to any one of claims 10 to 16, wherein the semiconductor element is a switching element having a drain electrode, a source electrode, and a gate electrode, and comprises three first conductive members spaced apart from each other in the second direction, and three second conductive members spaced apart from each other in the second direction, one of the second conductive members being electrically bonded to the gate electrode, and the other two second conductive members being electrically bonded individually to the source electrode.

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