Polishing pad, manufacturing method therefor, and method for manufacturing semiconductor device by using same

Abstract

According to implementations of the present invention, a polishing pad is provided, the polishing pad comprising a polishing layer including a first surface and a second surface, which is a rear surface thereof, and having a non-foamed structure, wherein the polishing layer includes a plurality of holes that extend from the first surface toward the second surface and do not penetrate the polishing layer, the width of each of the plurality of holes being 3 μm or less.

Description

Polishing pad, method of manufacturing the same, and method of manufacturing a semiconductor device using the same

[0001] The present invention relates to a polishing pad, a method for manufacturing the same, and a method for manufacturing a semiconductor device using the same.

[0002] Chemical Mechanical Planarization (CMP) processes can be performed for various purposes in diverse technological fields. For example, the CMP process can be utilized for surfaces of materials and substrates used in semiconductor devices, electronic components, optical components, etc., for purposes such as planarization, removal of aggregated material, resolution of crystal lattice damage, and removal of surface defects and contaminants.

[0003] In a CMP process, a polishing pad may be used to polish the surface of a target. For example, in a semiconductor manufacturing process, the CMP process is a process in which a semiconductor substrate, such as a wafer or a die, is attached to a head, and the head and the platen are rotated relative to each other while the semiconductor substrate is in contact with the surface of a polishing pad placed on a platen to polish the surface of the semiconductor substrate.

[0004] In conventional polishing pads, fine pores or microcells are formed inside the polishing layer through hollow bodies or foaming methods to support the flow of the slurry. Meanwhile, it is necessary to detect the thickness of the semiconductor substrate to be polished in the CMP process and thereby detect the end point of the CMP process. For example, the thickness and flatness of the semiconductor substrate can be measured in-situ using a reflected beam generated by an interferometer of a laser irradiated from an optical sensor.

[0005] However, when the polishing layer is formed through a foaming method, light such as a laser cannot pass through the polishing layer due to the porous structure or foam structure, so a window with light transmittance must be inserted into the polishing layer. When a window is inserted into the polishing layer, leakage of slurry may occur through the part where the window is inserted, or the durability of the polishing layer may be reduced. Furthermore, due to the difference in physical properties between the window and the polishing layer, it may become difficult to control polishing characteristics such as polishing flatness and polishing rate to a desired range, and it may affect the processing quality of the polishing target.

[0006] Therefore, research is needed on a polishing pad that can easily detect the thickness, polishing amount, and process end time of the semiconductor substrate during the CMP process while ensuring polishing characteristics at a desired level.

[0007] [Prior Art Literature]

[0008] [Patent Literature]

[0009] (Patent Document 1) Republic of Korea Registered Patent No. 10-1762936

[0010] The technical problem to be solved by the present invention is to provide a polishing pad that can detect the thickness of a semiconductor substrate and the end point of the polishing process without inserting a window by using a polishing layer having a non-foaming structure so that light can be transmitted to the polishing pad, and can exhibit improved polishing characteristics without pores or microcells by having a plurality of holes formed in the polishing layer.

[0011] In addition, another technical problem to be solved by the present invention is to provide a method for manufacturing the polishing pad.

[0012] In addition, another technical problem to be solved by the present invention is to provide a method for manufacturing a semiconductor device using the polishing pad.

[0013]

[0014] A polishing pad according to an embodiment of the present invention includes a polishing layer having a non-foaming structure, comprising a first surface and a second surface which is a back surface, and the polishing layer includes a plurality of holes that extend from the first surface toward the second surface and do not penetrate the polishing layer, and the width of each of the plurality of holes is 3 μm or less.

[0015] A method for manufacturing a polishing pad according to another embodiment of the present invention comprises: a step of manufacturing a sheet for a polishing layer from a raw material composition that includes a prepolymer and a curing agent and does not include a foaming agent; and a step of irradiating a laser onto one surface of the sheet for a polishing layer to form a plurality of holes that do not penetrate the sheet for a polishing layer, wherein the width of each of the plurality of holes is 3 μm or less.

[0016] A method for manufacturing a semiconductor device according to another embodiment of the present invention comprises the steps of: mounting a polishing pad on a surface plate; mounting a polishing target on a carrier; arranging the first surface of the polishing layer and the surface to be polished of the polishing target so as to come into contact; and rotating the surface plate and the carrier, respectively.

[0017]

[0018] A polishing pad according to an embodiment of the present invention includes a polishing layer having a non-foaming structure, and the light transmittance to the polishing pad is improved so that the thickness and degree of polishing of a semiconductor substrate can be easily detected without a window being inserted into the polishing pad. In addition, the polishing pad does not penetrate the polishing layer and includes a plurality of holes having a width of 3 μm or less, thereby allowing the flow of slurry and the reception of debris to be effectively controlled by said holes, and the polishing pad can have improved polishing characteristics.

[0019]

[0020] FIG. 1 is a schematic perspective view showing a polishing pad according to some embodiments of the present invention.

[0021] FIG. 2 is a schematic cross-sectional view showing a polishing pad according to some embodiments of the present invention.

[0022] FIG. 3 is a schematic perspective view showing a polishing pad according to some embodiments of the present invention.

[0023] FIG. 4 is a schematic plan view showing a polishing pad according to some embodiments of the present invention.

[0024] FIG. 5 is a schematic plan view showing a polishing pad according to some embodiments of the present invention.

[0025] FIG. 6 is a schematic cross-sectional view showing a polishing pad according to some embodiments of the present invention.

[0026] FIG. 7 is a schematic process diagram showing a manufacturing process of a semiconductor device according to some embodiments of the present invention.

[0027] FIG. 8 is a schematic process diagram showing a manufacturing process of a semiconductor device according to some embodiments of the present invention.

[0028] Figures 9a and 9b are photographic images of a window inserted within the polishing layer of the polishing pad of Comparative Example 1, respectively.

[0029] The present invention will be described in detail below through various embodiments. The embodiments are not limited to those disclosed below and may be modified in various forms as long as the essence of the invention is not altered.

[0030] In this specification, terms referring to each component are used to distinguish them from other components and are not intended to limit the embodiments. Additionally, in this specification, singular expressions include plural expressions unless the context clearly indicates otherwise.

[0031] In this specification, when a part is described as "comprising" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.

[0032] In this specification, the description that one component is placed or formed on or under another component, or is connected or coupled to one another, includes both direct placement, formation, connection, or coupling between these components and indirect placement, formation, connection, or coupling through the interposition of other components. Furthermore, it should be understood that the criteria for the top and bottom of each component may vary depending on the direction in which the object is observed.

[0033] All numerical ranges representing physical property values, dimensions, etc. of the components described in this specification should be understood to be modified by the term "approximately" in all cases unless otherwise specified.

[0034] In numerical ranges defining the size, physical properties, etc., of components described in this specification, if a numerical range in which only the upper limit is defined and a numerical range in which only the lower limit is defined are separately exemplified, it should be understood that a numerical range combining these upper and lower limits is also included in the exemplary range.

[0035] In this specification, terms such as "first," "second," etc., are used to describe various components, and said components are not to be limited by said terms. These terms are used for the purpose of distinguishing one component from another.

[0036] Polishing pad

[0037] A polishing pad according to embodiments of the present invention includes a polishing layer having a non-foaming structure, comprising a first surface and a second surface which is a back surface, and the polishing layer includes a plurality of holes that extend from the first surface toward the second surface and do not penetrate the polishing layer, and the width of each of the plurality of holes is 3 μm or less.

[0038] Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, this is intended to describe preferred embodiments of the present invention, and the present invention is not limited to the structures, components, forms, arrangement relationships, etc., shown in the drawings. The size of each component in the drawings may be exaggerated for illustrative purposes and does not represent the actual size applied.

[0039] FIG. 1 is a schematic perspective view showing a polishing pad according to some embodiments of the present invention. FIG. 2 is a schematic cross-sectional view showing a polishing pad according to one embodiment of the present invention.

[0040] Referring to FIGS. 1 and 2, the polishing pad (100) may include a polishing layer (110) having a first surface (101) and a second surface (102). The first surface (101) and the second surface (102) may be surfaces facing each other of the polishing layer (110), for example, the first surface (101) may be provided as a polishing surface in contact with a polishing target, and the second surface (102) may be the back surface of the polishing surface.

[0041] The polishing layer (110) may have a non-foaming structure. For example, the polishing layer (110) may be composed of a non-porous material that does not contain pores or microcells.

[0042] Conventional polishing pads are generally formed through methods such as hollowing or foaming, and accordingly, pores or microcells may be formed inside the polishing pad. When the polishing pad contains pores, the polishing pad can be softened and slurry can be accommodated on the surface of the polishing pad; however, since light such as a laser cannot penetrate the polishing pad due to the porous or foamed structure, a window, which is a light-transmitting structure, must be inserted into the polishing layer to detect the thickness or polishing characteristics of the object being polished during the polishing process. However, since the window is inserted into the polishing layer, leakage of slurry may occur in the inserted area, or the durability of the polishing layer may be reduced due to detachment or peeling of the window, and the polishing characteristics and polishing quality may vary due to the difference in physical properties between the polishing layer and the window on the polishing surface.

[0043] According to embodiments of the present invention, as the polishing layer (110) has a non-foaming structure, the polishing layer (110) can have high transmittance to light such as a laser. Therefore, even without a window being installed on the polishing layer (110), the thickness and polishing flatness of the polishing target can be detected in an in-situ manner, and the end point of the polishing process can be detected.

[0044] In addition, since no window is inserted within the polishing layer (110), leakage and slurry outflow due to the insertion of a window can be prevented, the durability of the polishing layer (110) can be improved, and more uniform polishing characteristics can be provided in the polishing area. Furthermore, since the polishing layer (110) does not contain pores, it can have a higher density and a lower repetitive compression rate, and the polishing wear rate can be reduced as it has hard physical properties.

[0045] In one embodiment, the polishing layer (110) may have a light transmittance of 30% to 90%, 30% to 85%, 50% to 80%, 60% to 80%, or 65% to 75% for light having one wavelength within the wavelength range of about 500 nm to about 700 nm at a thickness of about 2 mm. Additionally, the polishing layer (110) may have a refractive index of 1.40 to 1.65, 1.45 to 1.60, or 1.48 to 1.58 at a thickness of about 2 mm. As the light transmittance and refractive index of the polishing layer (110) are within the above ranges, the thickness of the polishing target and the polishing endpoint can be detected more accurately. As the polishing layer (110) has a non-foamed structure, it may have improved light transmittance and a refractive index within the above ranges.

[0046] A plurality of holes (112) may be formed on the first surface (101) of the polishing layer (110). Specifically, the polishing layer (110) may include a plurality of holes (112) that extend from the first surface (101) toward the second surface (102) and do not penetrate the polishing layer (110).

[0047] Each of the above plurality of holes (112) has a predetermined width (W H ) and depth (D H It can have ). The above width (W H ) may be the longest width or diameter of the hole (112) measured when observed from the first surface (101). The depth (D H ) may be the length of the hole (112) from the first surface (101) toward the second surface (102).

[0048] The width (W) of each of the plurality of holes (112) mentioned above H ) can be 3 μm or less.

[0049] As the polishing layer (110) opens at the first surface (101), which is the polishing surface, and includes a plurality of holes (112) having a width of 3 μm or less, the slurry can be received in the holes (112) and the discharge speed can be delayed, and the flow of the slurry on the polishing surface can be effectively controlled. In addition, the holes (112) can receive debris generated during the polishing process and discharge it during conditioning, thereby suppressing scratches and surface defects caused by debris. For example, if holes are not formed on the polishing surface, or if holes are formed but the width of the holes exceeds 3 μm, the slurry and debris carrying function, such as that in pores or microcells, may not be substantially provided.

[0050] Accordingly, according to embodiments of the present invention, even if the polishing layer (110) has a non-foamed structure that does not include pores or microcells, improved polishing characteristics and polishing uniformity can be provided. Additionally, when the polishing layer is formed to have a foamed structure or a porous structure using a foaming agent, it may be difficult to accurately control the distribution, size, shape, etc. of the pores formed within the polishing layer to a desired range. For example, even if the pores have an average diameter of 3 μm or less, the diameter distribution of the pores may range from tens of μm to hundreds of μm. According to embodiments of the present invention, the width, depth, etc. of the holes (112) can be easily controlled to a desired range, thereby providing a polishing pad with uniform polishing performance.

[0051] In some embodiments, the width (W) of the hole (112) H ) may be 0.1 μm or more. Specifically, the width (W) of the hole (112) H) may be 0.1 μm to 3.0 μm. Accordingly, an opening may be formed on the first surface (101) such that slurry, debris, or abrasive particles can be supported, and abrasive particles and slurry may be easily transferred to the polishing surface or debris may be easily accommodated in the hole (112) during the polishing process.

[0052] In one embodiment, the width (W) of the hole (112) H The width of the plurality of holes (112) may be 0.2 μm or more, 0.3 μm or more, 0.4 μm or more, or 0.5 μm or more, and may be 2.5 μm or less, 2.0 μm or less, 1.8 μm or less, or 1.5 μm or less. For example, the width of each of the plurality of holes (112) may be 0.1 μm to 2.5 μm, 0.2 μm to 2.5 μm, 0.2 μm to 2.0 μm, 0.3 μm to 2.0 μm, 0.3 μm to 1.8 μm, 0.4 μm to 1.8 μm, 0.4 μm to 1.5 μm, or 0.5 μm to 1.5 μm. Within the above range, polishing uniformity and flatness can be further improved, and a more precise polishing process can be provided by the polishing pad, thereby further improving polishing quality and efficiency.

[0053] In some embodiments, the depth (D) of each of the plurality of holes (112) H ) can be 100 μm to 1,000 μm. Accordingly, the slurry can be properly received and discharged, and the slurry can be uniformly supplied to the polishing area.

[0054] For example, if the depth of the hole is greater than 1,000 μm, the volume of the hole increases and a larger amount of slurry is accommodated within the hole, so a relatively large amount of slurry may be required to spread the slurry uniformly in the polishing area. In addition, if the depth of the hole is less than 100 μm, the volume of the hole decreases, which may reduce the capacity and retention of slurry during the polishing process, and consequently, the amount of slurry supplied to the polishing area decreases, which may lead to a decrease in the polishing speed and quality.

[0055] In one embodiment, the depth (D) of the hole (112) H ) may be 150 μm or more, 200 μm or more, 250 μm or more, 300 μm or more, or 350 μm or more, and may be 900 μm or less, 800 μm or less, 700 μm or less, 600 μm or less, 500 μm or less, or 450 μm or less. For example, the depth (D) of the hole (112). H The range may be 100 μm to 900 μm, 150 μm to 900 μm, 200 μm to 800 μm, 200 μm to 700 μm, 250 μm to 600 μm, 300 μm to 500 μm, 300 μm to 450 μm, or 350 μm to 450 μm. Within the above range, the slurry and debris loading performance can be further improved, and the slurry can be spread uniformly over the polishing surface, thereby further improving polishing uniformity and polishing efficiency.

[0056] In one embodiment, when observed from the first surface (101), the shape of the upper surface of the hole (112), for example, the shape of the opening of the hole (112) exposed outside the polishing layer (110), may be circular, elliptical, or polygonal, such as a triangle, square, pentagon, or hexagon. Specifically, the shape of the upper surface of the hole (112) may be circular or elliptical, and more specifically, circular.

[0057] In some embodiments, a plurality of holes (112) may be distributed over the entire area of ​​the first surface (101) of the polishing layer (110). For example, a plurality of holes (112) may be uniformly formed on the first surface (101) of the polishing layer (110) to have a honeycomb structure overall.

[0058] In other embodiments, the plurality of holes (112) may be formed in a portion of the first surface (101) of the polishing layer (110).

[0059] FIG. 3 is a schematic perspective view showing a polishing pad according to some embodiments of the present invention.

[0060] Referring to FIG. 3, the polishing layer (110) may include a first region (HR) containing a hole (112) and a second region (NHR) not containing a hole (112).

[0061] Both the first region (HR) and the second region (NHR) have a non-foamed structure and may contain the same resin. For example, the first region (HR) and the second region (NHR) are formed as a single sheet using the same raw material composition, and in the hole formation process, holes may be formed only in the first region (HR) through laser irradiation, etc.

[0062] The first area (HR) and the second area (NHR) can be arranged alternately and repeatedly along a certain direction on the first surface (101).

[0063] In some embodiments, when observed from the first surface (101) of the polishing layer (110), the first region (HR) and the second region (NHR) may have a concentric shape extending from the center of the polishing layer (110) toward the outside. For example, either of the first region (HR) and the second region (NHR) may have a circular shape at the center of the polishing layer (110), and the other region may have a ring shape surrounding the said region.

[0064] In one embodiment, the first region (HR) and the second region (NHR) may be alternately and repeatedly arranged from the center of the polishing layer (110) toward the outer edge. For example, in the direction from the center of the polishing layer (110) toward the outer edge, the first region (HR) may be arranged between the second region (NHR), or the second region (NHR) may be arranged between the first region (HR).

[0065] In FIG. 3, the first region (HR) is shown as being located at the outermost edge of the polishing layer (110) and the second region (NHR) is shown as being located at the center of the polishing layer (110), but this is not limited thereto, and the first region (HR) may be located at the center of the polishing layer (110) or the second region (NHR) may be located at the outermost edge of the polishing layer (110).

[0066] FIG. 4 is a schematic plan view showing a polishing pad according to another embodiment of the present invention. For example, FIG. 4 is a plan view of a polishing layer observed from the first side (third direction) of the polishing pad.

[0067] Referring to FIG. 4, when observed from the first surface (101) of the polishing layer (110), the first region (HR) and the second region (NHR) may each have a fan shape extending from the center to the outer edge of the polishing layer (110).

[0068] In one embodiment, the first region (HR) and the second region (NHR) may be alternately and repeatedly arranged along the outer perimeter of the polishing layer (110). For example, along the outer perimeter of the polishing layer (110), the first region (HR) may be arranged between the second region (NHR), and the second region (NHR) may be arranged between the first region (HR).

[0069] In some embodiments, the first region (HR) and the second region (NHR) may be arranged randomly or disorderly when observed from the first surface (101).

[0070] In some embodiments, based on the area of ​​the first surface (101) of the polishing layer (110) (based on the area of ​​the first region if the polishing layer includes the first region and the second region), the number of holes (112) is 10 / 324 mm 2 60 pieces / 324mm 2 It is possible. Within the above range, the flow of the slurry in the polishing area can be controlled more effectively, and the polishing speed and polishing efficiency can be further improved.

[0071] For example, the number of holes (112) is 10 / 324mm based on the area of ​​the first surface (or first region). 2 More than 15 pieces / 324mm 2 More than 20 pieces / 324mm 2 More than, or 25 pieces / 324mm 2 It may be more than 60 pieces / 324mm 2 Below, 50 pieces / 324mm 2 Below, 40 pieces / 324mm 2 Less than, or 35 pieces / 324mm 2 It may be less than or equal to 15 holes / 324 mm. Specifically, the number of holes (112) is 15 / 324 mm 2 50 pieces / 324mm 2 , 20 pieces / 324mm 2 50 pieces / 324mm 2 , 20 pieces / 324mm 2 40 pieces / 324mm 2 , or 25 pieces / 324mm 2 35 pieces / 324mm 2 It could be.

[0072] FIG. 5 is a schematic plan view showing a polishing pad according to some embodiments of the present invention. For example, FIG. 5 is an enlarged plan view of area C of FIG. 1.

[0073] Referring to FIG. 5, when observed from the first surface (101), a plurality of holes (112) may be regularly arranged on the first surface (101). For example, when observed from the first surface (101) of the polishing layer (110), a plurality of holes (112) may be arranged along a first direction to form a hole group (H G ) can be defined. In addition, multiple hole groups (H G ) can be arranged along a second direction perpendicular to the first direction above.

[0074] In one embodiment, the hole (112) may be formed with a constant diameter and depth. For example, the diameter and depth of the hole formed in the polishing layer may both be the same. In another embodiment, holes having various diameters or depths may be formed in the polishing layer.

[0075] In some embodiments, the plurality of holes (112) may include a first hole (114) and a second hole (116) having different sizes. Specifically, the first hole (114) has a first width (W H1 It has ), and the second hole (116) has the first width (W H1 The second width (W) greater than ) H2 Can have ).

[0076] In one embodiment, the first width (W H1 ) is 1.0 μm or less, and the second width (W H2The width may be greater than 1.0 μm. For example, a plurality of holes (112) may include a first hole (114) having a width of 1.0 μm or less and a second hole (116) having a width greater than 1.0 μm. As the first hole (114) and the second hole (116) having different sizes are formed on the polishing surface, the polishing characteristics can be controlled under optimal conditions. For example, the slurry can be uniformly dispersed throughout the entire polishing area by the first hole (114), and the polishing uniformity and flatness can be further improved. In addition, debris can be effectively accommodated during the polishing process by the second hole (116), and the amount of polishing particles or slurry retained can be increased, thereby improving the polishing speed and polishing quality.

[0077] Specifically, the first width (W H1 ) may be 0.1 μm to 1.0 μm, and more specifically, may be 0.2 μm to 1.0 μm, 0.3 μm to 1.0 μm, 0.4 μm to 1.0 μm, or 0.5 μm to 1.0 μm.

[0078] Specifically, the second width (W H2 ) may be 1.0 μm to 3.0 μm, and more specifically, may be 1.0 μm to 2.5 μm, 1.0 μm to 2.0 μm, 1.0 μm to 1.8 μm, or 1.0 μm to 1.5 μm.

[0079] In one embodiment, the ratio of the number of second holes (116) to the number of first holes (114) on the first surface (101) may be 0.5 or more, 0.6 or more, 0.7 or more, 0.8 or more, or 0.9 or more, and may be 2.0 or less, 1.7 or less, 1.4 or less, 1.3 or less, or 1.1 or less. For example, the ratio of the number of second holes (116) to the number of first holes (114) may be 0.5 to 2.0, and specifically, 0.6 to 1.7, 0.7 to 1.4, 0.8 to 1.3, or 0.9 to 1.1.

[0080] Based on the area of ​​the first surface (101) of the polishing layer (110) (based on the area of ​​the first region if the polishing layer includes the first region and the second region), the number of first holes (114) is 5 / 324mm 2 30 pieces / 324mm 2 It may be. Specifically, the number of the first holes (114) is 5 / 324mm 2 25 pieces / 324mm 2 , 5 pieces / 324mm 2 20 pieces / 324mm 2 , or 10 pieces / 324mm 2 20 pieces / 324mm 2 It could be.

[0081] Based on the area of ​​the first surface (101) of the polishing layer (110) (based on the area of ​​the first area if the polishing layer includes the first area and the second area), the number of second holes (116) is 5 / 324mm 2 30 pieces / 324mm 2 It may be. Specifically, the number of second holes (116) is 5 / 324mm 2 25 pieces / 324mm 2 , 5 pieces / 324mm 2 20 pieces / 324mm 2 , or 10 pieces / 324mm 2 20 pieces / 324mm 2 It could be.

[0082] In some embodiments, based on the area of ​​the first surface (101) of the polishing layer (110) (or based on the area of ​​the first region), the number of first holes (114) is 5 / 324 mm 2 30 pieces / 324mm 2 and the number of second holes (116) is 5 / 324mm 2 30 pieces / 324mm 2 It could be.

[0083] In one embodiment, the first hole (114) and the second hole (116) may be randomly arranged on the first surface (101). In another embodiment, the first hole (114) and the second hole (116) may be regularly arranged on the first surface (101).

[0084] In one embodiment, when observed from the first surface (101) of the polishing layer (110), a plurality of holes (112) are arranged along a first direction to define a hole group (H G ) may include first holes (114) and second holes (116) that are alternately and repeatedly arranged along the first direction. For example, the first holes (114) may be located between adjacent second holes (116) in the first direction, and the second holes (116) may be located between adjacent first holes (114) in the first direction.

[0085] In addition, a plurality of the above-mentioned hole groups (H G ) can be arranged adjacent to each other along the second direction. The first hole (114) and the second hole (116) can be arranged alternately and repeatedly along the second direction. For example, the first hole (114) may be located between the second holes (116) adjacent to the second direction, and the second hole (116) may be located between the first holes (114) adjacent to the second direction.

[0086] The polishing layer (110) may further include grooves on the first surface (101). The grooves can support a large flow of liquid components, such as slurry or cleaning liquid, in the polishing area, and the polishing characteristics can be maintained more effectively.

[0087] FIG. 6 is a schematic cross-sectional view showing a polishing pad according to some embodiments of the present invention.

[0088] Referring to FIG. 6, the polishing layer (110) is formed on the first surface (101) at a predetermined depth (D G) and width (W G It may include a groove (118) having )

[0089] The width (W) of the groove (118) G ) is the width (W) of the hole (112) H It can be larger than ). Accordingly, the large flow of slurry on the polishing surface is controlled by the groove (118), and the polishing target is mechanically polished so that the polishing efficiency can be increased, and the hole (112) having a smaller width can substantially perform a function such as a pore or microcell in the polishing area.

[0090] In one embodiment, the depth (D) of the groove (118) G ) is the depth (D) of the hole (112) H It can be larger than )

[0091] In one embodiment, the width (W) of the groove (118) G ) may be 0.1 mm to 20 mm, 0.1 mm to 15 mm, 0.1 mm to 10 mm, 0.1 mm to 5 mm, or 0.1 mm to 1.5 mm.

[0092] In one embodiment, the depth (D) of the groove (118) G ) may be 100 µm to 1500 µm, 300 µm to 1300 µm, 400 µm to 1200 µm, 400 µm to 1000 µm, or 400 µm to 800 µm.

[0093] As the groove (118) has a width and / or depth of the above range, the fluidity of the polishing slurry is controlled so that debris is efficiently contained within the groove (118) or hole (112), and components such as polishing particles that perform a polishing function can be provided to the polishing area at an appropriate flow rate.

[0094] In one embodiment, the groove (118) may be a concentric circular structure spaced apart at a predetermined interval from the center of the polishing layer (110) toward the end. In another embodiment, the groove (118) may be a radial structure formed continuously from the center of the polishing layer (110) toward the end. In yet another embodiment, the groove (118) may include both the concentric circular structure and the radial structure described above.

[0095] Multiple holes (112) may be arranged between the grooves (118). For example, if the grooves (118) have a concentric structure, multiple holes (112) may be arranged between adjacent concentric grooves (118).

[0096] The hardness of the polishing layer (110) may be 40 Shore D to 65 Shore D, 40 Shore D to 60 Shore D, 40 Shore D to 55 Shore D, 40 Shore D to 50 Shore D, or 40 Shore D to 45 Shore D.

[0097] The density of the polishing layer (110) is 0.85 g / m² 3 It may be more than that. For example, the density of the polishing layer (110) is 0.85 g / m² 3 Up to 1.2 g / m 3 , 0.85 g / m 3 Up to 1.0 g / m² 3 , 0.85 g / m 3 Up to 0.95 g / m² 3 , or 0.90 g / m² 3 Up to 0.95 g / m² 3 It could be.

[0098] The Pad Wear Rate (PWR) of the polishing pad (100) may be 20 μm / 10 min or less. The PWR can be measured as the change in thickness per hour of the polishing pad before and after conditioning when the polishing pad is pre-conditioned with deionized water for an initial 90 minutes, and then conditioned again while spraying deionized water for 10 minutes. The conditioning may be performed using Saesol CI45 as a disc at a conditioning pressure of 9 lbf and a rotational speed of 120 rpm.

[0099] For example, the PWR of the polishing pad (100) may be 15 μm / 10min or less, 11 μm / 10min or less, 10 μm / 10min or less, 9 μm / 10min or less, 7 μm / 10min or less, or 5 μm / 10min or less, and specifically, 2 μm / 10min to 15 μm / 10min, 2 μm / 10min to 10 μm / 10min, 8 μm / 10min to 11 μm / 10min, 3 μm / 10min to 5 μm / 10min, or 4 μm / 10min to 5 μm / 10min.

[0100] The polishing pad (100) may further include an adhesive layer (not shown) formed on the second surface (102) of the polishing layer (110). The adhesive layer may be formed using a hot-melt adhesive composition. The adhesive layer may bond the polishing layer with a transparent substrate or platen to be described later, and may also function as a barrier layer to prevent the slurry supplied to the polishing layer (110) from leaking out.

[0101] The polishing pad (100) may further include a transparent substrate formed on the bottom surface of the adhesive layer. The transparent substrate can be bonded to the polishing layer (110) through the adhesive layer. The external force acting on the polishing layer during the polishing process can be buffered and dispersed by the transparent substrate, and the durability of the polishing pad can be further improved.

[0102] In one embodiment, the polishing pad (100) may not include other pad layers except for the polishing layer (110). Since the polishing layer (110) does not contain pores or microcells and has a hard physical property, the physical properties of the polishing pad may be further improved, for example, even if other pad layers such as a cushion layer are not included. Additionally, since other pad layers are not included, the light transmittance may be maintained at a high level, while the polishing pad (100) may be made lighter, thinner, and smaller.

[0103] In another embodiment, the polishing pad (100) may further include a cushion layer on the bottom surface of the polishing layer (110). For example, the cushion layer may be attached to the polishing layer (110) through the adhesive layer.

[0104] In one embodiment, the cushion layer may also have a non-foamed or non-porous structure. Accordingly, the cushion layer may have light transmittance, so the polishing pad (100) may have a high overall light transmittance.

[0105] The cushion layer may include the same resin as the polishing layer (110). For example, the cushion layer may be formed by curing a raw material composition comprising a prepolymer and a curing agent. In another embodiment, the cushion layer may be manufactured by impregnating a substrate layer, such as a nonwoven fabric, with a composition comprising a fluorine-based resin or a silane-based resin.

[0106] The polishing pad (100) may not include a window. As described above, since the polishing layer (110) has a non-foaming structure and a relatively high light transmittance, even if a window is not inserted into the polishing layer (110), light such as a laser can directly pass through the polishing layer (110) to easily detect and determine the thickness of the polishing target and the time when polishing is finished.

[0107] Method for manufacturing a polishing pad

[0108] A method for manufacturing a polishing pad according to embodiments of the present invention comprises: a step of manufacturing a sheet for a polishing layer from a raw material composition that includes a prepolymer and a curing agent and does not include a foaming agent; and a step of irradiating a laser onto a first surface of the sheet for a polishing layer to form a plurality of holes having a width of 3 μm or less that do not penetrate the sheet for a polishing layer.

[0109] "Prepolymer" generally refers to a polymer with a relatively low molecular weight in which the degree of polymerization is stopped at an intermediate stage to facilitate molding when manufacturing a type of final molded product. The prepolymer can be molded as is or after reacting with other polymerizable compounds.

[0110] The above prepolymer may include a urethane-based prepolymer. For example, the urethane-based prepolymer may be prepared by reacting an isocyanate compound with a polyol.

[0111] The above isocyanate compound may include, for example, one or more compounds selected from the group consisting of toluene diisocyanate (TDI), naphthalene-1,5-diisocyanate, p-phenylene diisocyanate, tolidine diisocyanate, 4,4'-diphenyl methane diisocyanate, hexamethylene diisocyanate, dicyclohexylmethane diisocyanate, and isophorone diisocyanate.

[0112] The above polyol may include one or more compounds selected from the group consisting of, for example, polyether polyol, polyester polyol, polycarbonate polyol, and acryl polyol.

[0113] In one embodiment, the polyol may have a weight-average molecular weight (Mw) of 300 g / mol to 3,000 g / mol.

[0114] In one embodiment, the urethane-based prepolymer may be a polymer prepared by reacting an isocyanate compound containing toluene diisocyanate with a polyol containing polytetramethylene ether glycol.

[0115] In some embodiments, the urethane-based prepolymer may have a weight-average molecular weight of 500 g / mol to 3,000 g / mol. Specifically, the urethane-based prepolymer may have a weight-average molecular weight of 600 g / mol to 2,000 g / mol, or 800 g / mol to 1,000 g / mol.

[0116] In one embodiment, the isocyanate end group (terminal NCO) content (NCO%) of the urethane-based prepolymer may be 5% to 15% by weight based on the total weight of the urethane prepolymer. For example, the terminal NCO content (NCO%) of the urethane-based prepolymer may be 6% to 13% by weight, 7% to 12% by weight, 7.5% to 11% by weight, or 8% to 10% by weight.

[0117] The curing agent may include an amine compound and / or an alcohol compound. For example, the curing agent may include one or more compounds selected from the group consisting of aromatic amines, aliphatic amines, aromatic alcohols, and aliphatic alcohols.

[0118] For example, the curing agent is 4,4'-methylenebis(2-chloroaniline) (MOCA), diethyltoluenediamine, diaminodiphenyl methane, diaminodiphenyl sulfone, m-xylylene diamine, isophoronediamine, ethylenediamine, diethylenetriamine, triethylenetetramine, polypropylenediamine, polypropylenetriamine, ethyleneglycol, diethyleneglycol, dipropyleneglycol, butanediol, hexanediol, glycerin, trimethylolpropane, and It may include one or more selected from the group consisting of bis(4-amino-3-chlorophenyl)methane.

[0119] In one embodiment, the urethane-based prepolymer and the curing agent may be mixed in a molar equivalent ratio of 1:0.8 to 1.2 or 1:0.9 to 1.1, based on the number of moles of reactive groups within each molecule. Here, "based on the number of moles of each reactive group" means, for example, based on the number of moles of isocyanate groups of the urethane-based prepolymer and the number of moles of reactive groups (amine groups, alcohol groups, etc.) of the curing agent. The urethane-based prepolymer and the curing agent may be added during the mixing process to satisfy the aforementioned molar equivalent ratio and react with each other. As the curing reaction is carried out at the above reaction ratio, the curing reaction can be optimized, and a polishing pad having the physical properties required for the CMP process can be provided.

[0120] In some embodiments, the raw material mixture may comprise 60 to 97 parts by weight of the urethane-based prepolymer and 3 to 40 parts by weight of the curing agent based on 100 parts by weight of the raw material mixture. For example, the raw material mixture may comprise 65 to 95 parts by weight of the urethane-based prepolymer and 5 to 35 parts by weight of the curing agent based on 100 parts by weight of the raw material mixture.

[0121] A solid polyurethane can be formed by reacting the above raw material mixture. For example, during the reaction process, the isocyanate terminal group (NCO group) of the urethane-based prepolymer may react with the amine group or alcohol group of the curing agent. Since the above raw material mixture does not contain a foaming agent, the solid polyurethane may have a non-foamed or non-porous structure that does not contain pores or microcells.

[0122] In one embodiment, the solid polyurethane may be manufactured in the form of a sheet. For example, the polyurethane formed from the raw material mixture may be provided as a sheet for an abrasive layer.

[0123] A plurality of holes may be formed by irradiating a laser onto one surface of the sheet for the polishing layer. The plurality of holes may be formed so as not to penetrate the sheet for the polishing layer. For example, when a laser is irradiated onto one surface of the sheet for the polishing layer, the polyurethane at the laser-irradiated area absorbs the laser beam, and consequently, strong heat is generated, causing the polyurethane to melt, and holes may be formed in the melted area.

[0124] The hole may be formed to have a width of 3 μm or less. For example, the hole may be formed to have a width of 0.1 μm to 3.0 μm, 0.1 μm to 2.5 μm, 0.2 μm to 2.5 μm, 0.2 μm to 2.0 μm, 0.3 μm to 2.0 μm, 0.3 μm to 1.8 μm, 0.4 μm to 1.8 μm, 0.4 μm to 1.5 μm, or 0.5 μm to 1.5 μm.

[0125] The width, depth, shape, distribution, and area where the holes are formed in the sheet for the polishing layer can be controlled by controlling the laser irradiation position and angle, the intensity and wavelength range of the laser beam, the exposure time to the laser beam, the spot size, etc. For example, the laser irradiation conditions can be adjusted so that the width, depth, shape, number, arrangement form, and area where the holes are formed (first area) of the holes (or first holes and second holes) satisfy the embodiments described above.

[0126] According to embodiments of the present invention, by forming the holes using a laser, the specifications, size, shape, and distribution of the holes can be controlled more precisely, and, for example, holes with complex shapes and fine sizes can be easily formed to a desired level, thereby further improving the reliability and uniformity of the polishing process.

[0127] A groove may be further formed along with a hole on one side of the sheet for the polishing layer. The groove may be formed to have a depth, width, shape, etc., according to the embodiments described above. For example, a groove having a concentric or radial structure may be formed on one side of the sheet for the polishing layer, and a hole may be formed by irradiating a laser onto at least a portion of the area on one side of the sheet for the polishing layer where the groove is not formed. In other embodiments, the hole may be formed first by irradiating a laser onto at least a portion of one side of the sheet for the polishing layer, and then a groove having a concentric or radial structure may be formed.

[0128] Method for manufacturing a semiconductor substrate

[0129] A method for manufacturing a semiconductor device according to embodiments of the present invention comprises the steps of: mounting a polishing pad according to the above-described embodiments onto a surface plate; mounting a polishing target onto a carrier; arranging the first surface of the polishing layer and the surface to be polished of the polishing target so as to come into contact with each other; and rotating the surface plate and the carrier, respectively.

[0130] FIG. 7 is a schematic process diagram showing a manufacturing process of a semiconductor device according to some embodiments of the present invention.

[0131] Referring to FIG. 7, a polishing pad (100) can be mounted on a surface plate (310). The polishing pad (100) can be mounted on the surface plate (310) such that the first surface of the polishing layer (110) faces upward. For example, a plurality of holes may be exposed on the polishing surface of the polishing pad (100) mounted on the surface plate (310).

[0132] The polishing pad (100) may further include an adhesive layer (150) formed on a second surface of the polishing layer (110). The polishing layer (110) may be attached to a surface plate (310) through the adhesive layer (150). For example, the polishing pad (100) may not include any other pad layers other than the polishing layer (110).

[0133] A semiconductor substrate (200) can be positioned on the polishing pad (100) so that the polishing surface of the polishing pad (100) and the surface (surface to be polished) of the semiconductor substrate (200) to be polished come into contact. For example, the semiconductor substrate (200) can be mounted on a polishing head (320) to come into direct contact with the polishing surface of the polishing pad (100).

[0134] In one embodiment, a polishing slurry (340) may be sprayed onto a polishing pad (100) for polishing. The polishing slurry (340) may be sprayed through a nozzle (330). The flow rate of the polishing slurry (340) sprayed through the nozzle (330) may be controlled within the range of 10 mL / min to 1,000 mL / min, or 50 mL / min to 500 mL / min.

[0135] The polishing pad (100) and the semiconductor substrate (200) can be rotated relative to each other to polish the surface to be polished of the semiconductor substrate (200). In one embodiment, the rotation direction of the polishing pad (100) and the rotation direction of the semiconductor substrate (200) may be the same. In one embodiment, the rotation direction of the polishing pad (100) and the rotation direction of the semiconductor substrate (200) may be opposite to each other.

[0136] FIG. 8 is a schematic process diagram showing a manufacturing process of a semiconductor device according to some embodiments of the present invention.

[0137] Referring to FIG. 8, the thickness of the semiconductor substrate (200) can be detected and the end point of the polishing process can be detected through the optical sensor unit (350). The optical sensor unit (350) may include a light irradiation unit that irradiates light toward the semiconductor substrate (200), and a light detection unit that detects a change in the intensity of the reflected light.

[0138] For example, the polishing layer (110) has a high light transmittance so that light such as a laser can directly pass through the polishing layer (110). Accordingly, the thickness of the semiconductor substrate (200) can be measured through the reflected light generated by the interferometer of the laser coming from the light sensor unit (350) without the insertion of a window.

[0139] An area of ​​the polishing layer (110) in which no holes are formed may be provided as a light-transmitting area. For example, light may be projected from a light sensor unit (350) located below the light-transmitting area into the light-transmitting area, and light reflected from the semiconductor substrate (200) may reach the light sensor unit (350) through the light-transmitting area. The light sensor unit (350) detects changes in the thickness and surface roughness of the semiconductor substrate (200) by identifying changes in the reflected light, and thereby detects the end point of the polishing process. The polishing process may end when a change in the intensity of the reflected light corresponding to a predetermined amount of thickness change or surface roughness is detected by the light sensor unit (350).

[0140] The light sensor unit (350) may be located at the bottom of the polishing pad (100). In one embodiment, the light sensor unit (350) may be located inside the surface plate (310). For example, a groove may be formed in the surface plate (310), and the light sensor unit (350) may be placed inside the groove.

[0141]

[0142] The present invention will be explained in more detail below through the following examples. However, the following examples are merely illustrative of the present invention, and the scope of the present invention is not limited thereto.

[0143] Example 1

[0144] Manufacturing of abrasive layer (abrasive pad)

[0145] A urethane-based prepolymer (HD-500D, SKC) with an unreacted NCO group content of 8.5 wt% was filled into a casting machine equipped with an inert gas injection line and a reaction control agent injection line, and bis(4-amino-3-chlorophenyl)methane was filled into a curing agent tank as a curing agent.

[0146] The molar equivalent of the NCO groups of the above urethane-based prepolymer and the molar equivalent of the reactive groups of the curing agent were matched to a 1:1 ratio, and the urethane-based prepolymer and curing agent were fed into a mixing head while stirring at a rotational speed of 6,000 rpm. The stirred raw materials were extruded into a mold (1,000 mm × 1,000 mm × 50 mm) at a speed of 10 kg / min, and the reaction was completed to obtain a molded body in the form of a solid cake. The top and bottom ends of the molded body were cut and punched, and then a milling process and a groove forming process were performed to manufacture a sheet for a polishing layer with a thickness of 1.9 mm.

[0147] A polishing layer (polishing pad) was manufactured by irradiating a laser (irradiation conditions such as wavelength, output, spot size, etc.) onto the upper surface of the sheet for the polishing layer to form a plurality of holes having a certain depth and width.

[0148] The laser beam output, shutdown time, and spot size were adjusted so that the holes have a depth of approximately 300 µm to approximately 500 µm and a width of approximately 0.5 µm to approximately 1.5 µm. Among the holes, the first holes having a width of 0.5 µm to 1.0 µm number 15 / 324 mm based on the area of ​​the upper surface of the polishing layer.2 Formed, the second holes having a width of 1.0 μm to 1.5 μm are 15 / 324 mm based on the area of ​​the upper surface of the polishing layer. 2 It was formed. At this time, the irradiation position of the laser beam was aligned so that the first hole and the second hole were formed in the shape of Fig. 5 below on the upper surface of the polishing layer.

[0149] Example 2

[0150] A circular sub-pad (thickness 1.2 mm) was prepared by impregnating a polyester fiber non-woven fabric with polyurethane resin. Using the polishing layer prepared in Example 1 as the top pad, the bottom surface of the polishing layer and the sub-pad were attached using the hot-melt adhesive to produce a polishing pad having a laminated structure of sub-pad / adhesive layer (thickness: 0.1 mm) / top pad.

[0151] Comparative Example 1

[0152] As a polishing pad, an SKC HD-319B pad containing a polishing layer having a foam structure was used.

[0153] Measurement of the physical properties of the polishing pad

[0154] Density: The abrasive pad was cut to a size of 2 cm × 2 cm (thickness: 1.5 mm) and left to stand for 16 hours in an environment with a temperature of 23±2 ℃ and a humidity of 50±5%. The density of the abrasive pad was measured using a 3D CMM instrument, CRYSTA-Apex S9106 (Mitutoyo).

[0155] Hardness: The abrasive pad was cut to a size of 2 cm × 2 cm (thickness: 1.5 mm) and left to stand for 16 hours in an environment with a temperature of 23±2℃ and a humidity of 50±5%. The Shore D hardness of the abrasive pad was measured using a digital hardness tester HPE 3 Shore D (Bareiss).

[0156] Repeated compression rate: The compression rate was measured by the change in thickness (A) measured after placing an 85 g weight on the polishing pad for 30 seconds using a dial thickness gauge (129-E, YASUDA) and the thickness (B) measured after placing an additional 800 g weight (85 g weight + 800 g weight) on it for 3 minutes ([(A - B) / A] × 100).

[0157] Density (g / cm³) 3 Hardness (Shore D) Repeated Compression Rate (%) Example 10.9 44.2 17.01 Example 20.9 62 19.63 Comparative Example 10.8 55~60 19.75

[0158] Referring to Table 1, the polishing pads of the examples have a polishing layer that is non-porous or non-foamed, so they may have a relatively higher density than the polishing pads of the comparative examples.

[0159] Experimental Example 1: PWR (Pad Wear Rate) Evaluation

[0160] The PWR of the above-mentioned polishing pad was evaluated. Specifically, the polishing pad was pre-conditioned with deionized water for an initial 90 minutes, and then re-conditioned while spraying deionized water for 10 minutes to measure the change in thickness of the polishing pad. Conditioning was performed using a CTS PWR-300 machine, and Saesol CI45 was used as the disc. The conditioning pressure was set to 9 lbf, the plate rotation speed was set to 120 rpm, and the conditioner rotation speed was set to 90 rpm.

[0161] The PWR for each grinding pad was measured three times, and the average PWR was calculated as the arithmetic mean of the measured values.

[0162] 1 st PWR(㎛ / 10min)2 nd PWR(㎛ / 10min)3 rdPWR (㎛ / 10 min) Average PWR (㎛ / 10 min) Example 1 10.7 8.7 9.1 9.5 Example 24.3 4.1 4.9 4.4 Comparative Example 1 26.5 27.1 27.5 27.0

[0163] Referring to Table 2, the polishing pads of Examples 1 and 2 exhibited a PWR of 20 μm / 10 min or less. This indicates that the performance of the polishing pad does not change significantly even when used for a long time in the polishing process, as the polishing pad has a low pad wear rate per hour. Therefore, the polishing pads of the examples can maintain polishing performance for a long period even under harsh process conditions or high process loads, such as when a relatively high load is applied or a slurry with a high content of polishing particles is used. On the other hand, the polishing pad of Comparative Example 1 exhibited a high PWR of 26 μm / 10 min or more.

[0164] Experimental Example 2: Evaluation of Grinding Pad Leakage

[0165] A polishing process was performed using the polishing pad of Comparative Example 1. A window inserted into the polishing layer of the polishing pad was photographed before and after the polishing process, respectively. FIG. 9a is an image of the window photographed before the polishing process, and FIG. 9b is an image of the window photographed after the polishing process.

[0166] Referring to Figures 9a and 9b, moisture was found in the window inserted into the polished layer after the polishing process compared to before the polishing process. Through this, it can be confirmed that slurry leakage or leaking occurred through the window during the polishing process.

[0167]

[0168] [Explanation of the symbol]

[0169] 100: Polishing pad, 110: Polishing layer, 112: Hole, 114: First hole, 116: Second hole, 118: Groove, 150: Adhesive layer, 200: Semiconductor substrate, 310: Surface plate, 320: Polishing head, 330: Nozzle, 340: Polishing slurry, 350: Optical sensor part

Claims

1. A polishing layer comprising a first surface and a second surface which is a reverse surface, and having a non-foaming structure, and The polishing layer includes a plurality of holes that extend from the first surface toward the second surface and do not penetrate the polishing layer, A polishing pad having a plurality of holes, each having a width of 3 μm or less.

2. In Paragraph 1, A polishing pad in which the plurality of holes are distributed across the entire area of ​​the first surface of the polishing layer.

3. In Paragraph 1, The polishing layer comprises a first region including the hole and a second region not including the hole, forming a polishing pad.

4. In Paragraph 3, A polishing pad, wherein when observed from the first surface of the polishing layer, the first region and the second region have a concentric shape extending from the center of the polishing layer toward the outer edge.

5. In Paragraph 4, A polishing pad in which the first region and the second region are alternately and repeatedly arranged from the center of the polishing layer toward the outer edge.

6. In Paragraph 3, A polishing pad, wherein when observed from the first surface of the polishing layer, the first region and the second region each have a fan shape extending from the center to the outer edge of the polishing layer.

7. In Paragraph 6, A polishing pad in which the first region and the second region are alternately and repeatedly arranged along the outer perimeter of the polishing layer.

8. In Paragraph 1, A polishing pad, wherein the depth of each of the plurality of holes is 100 μm to 1,000 μm.

9. In Paragraph 1, A polishing pad, wherein the width of each of the plurality of holes is 0.1 μm to 3.0 μm.

10. In Paragraph 1, A polishing pad comprising a plurality of holes, the plurality of holes including a first hole having a width of 1.0 μm or less and a second hole having a width greater than 1.0 μm.

11. In Paragraph 10, A polishing pad in which the ratio of the number of the second holes to the first holes is 0.5 to 2.

0.

12. In Paragraph 10, Based on the area of ​​the first surface of the polishing layer, the number of the first holes is 5 / 324mm 2 30 pieces / 324mm 2 and the number of the second holes mentioned above is 5 / 324mm 2 30 pieces / 324mm 2 Phosphor, polishing pad.

13. In Paragraph 10, When observed from the first surface of the above-mentioned polishing layer, The above plurality of holes are arranged along a first direction to define a hole group, and A polishing pad in which a plurality of the above-mentioned hole groups are arranged along a second direction perpendicular to the first direction.

14. In Paragraph 13, A polishing pad comprising the first hole and the second hole that are alternately and repeatedly arranged along the first direction.

15. In Paragraph 13, A polishing pad in which the first hole and the second hole are alternately and repeatedly arranged along the second direction.

16. In Paragraph 1, The above polishing pad is a polishing pad that does not include a window.

17. In Paragraph 1, The above polishing pad is a polishing pad that does not include any other pad layers except for the above polishing layer.

18. A step of manufacturing a sheet for an abrasive layer from a raw material composition comprising a prepolymer and a curing agent, and not comprising a foaming agent; and The method includes the step of irradiating a laser onto one surface of the sheet for the polishing layer to form a plurality of holes that do not penetrate the sheet for the polishing layer, A method for manufacturing a polishing pad, wherein the width of each of the plurality of holes is 3 μm or less.

19. A step of mounting the polishing pad according to claim 1 onto a surface plate; Step of mounting the object to be polished onto the carrier; A step of arranging the first surface of the polishing layer and the surface to be polished of the polishing target so as to come into contact with each other; and A method for manufacturing a semiconductor device comprising the step of rotating the above-mentioned plate and the above-mentioned carrier, respectively.

20. In Paragraph 19, The area of ​​the polishing layer where the hole is not formed is provided as a light-transmitting area, and A method for manufacturing a semiconductor device, further comprising the step of detecting the end point of a polishing process by detecting the thickness of a semiconductor substrate through the light-transmitting region.

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