Glass substrate singulation process and glass substrate unit manufactured thereby

Abstract

A glass substrate singulation process according to an embodiment of the present application comprises the steps of: forming a metal pattern on one surface or both surfaces of a glass substrate; forming an insulating layer on the one surface or both the surfaces of the glass substrate on which the metal pattern has been formed; removing the insulating layer formed on the metal pattern from the insulating layer; forming a protective layer on the insulating layer; removing the metal pattern; and forming a glass substrate unit by cutting the glass substrate along a position at which the metal pattern of the glass substrate has been removed.

Description

Glass substrate singulation process and glass substrate unit manufactured therefrom

[0001] The present application relates to a glass substrate singulation process and a glass substrate unit manufactured therefrom.

[0002] The present application claims the benefit of the filing dates of Korean Patent Application No. 10-2024-0152434 filed with the Korean Intellectual Property Office on October 31, 2024, and Korean Patent Application No. 10-2025-0157570 filed with the Korean Intellectual Property Office on October 28, 2025, the entire contents of which are incorporated herein by reference.

[0003] Glass substrates, which are gaining attention as next-generation packaging materials, offer superior warpage and CTE (coefficient of thermal expansion) compared to conventional organic substrates, enabling the implementation of large-area substrates and providing significant advantages for high-speed signaling and heat dissipation due to the increased number of I / O ports.

[0004] However, in the case of glass substrates, when singulating into units after the lamination process is completed, if singulating is performed using mechanical sewing, which is used in conventional printed circuit boards, a problem arises where the glass breaks.

[0005] To address this, processes utilizing lasers to directly cut glass substrates are being researched; however, there is a problem with microcracks occurring on the cut surface of the glass substrate, and this issue has not yet been resolved.

[0006] Therefore, research is needed on a technology that can chemically singulate a glass substrate without causing thermal or material shock.

[0007] [Prior Art] (Patent Document 1) Korean Patent Publication No. 10-2011-0060622

[0008] The present application aims to provide a glass substrate singulation process and a glass substrate unit manufactured therefrom.

[0009] One embodiment of the present application provides a glass substrate singulation process comprising the steps of: forming a metal pattern on one or both sides of a glass substrate; forming an insulating layer on one or both sides of the glass substrate on which the metal pattern is formed; removing the insulating layer formed on the metal pattern among the insulating layers; forming a protective layer on the insulating layer; removing the metal pattern; and cutting the glass substrate along the location where the metal pattern of the glass substrate is removed to form a glass substrate unit.

[0010] The above metal pattern may be a Cu pattern.

[0011] The above insulating layer may be ABF (Ajinomoto Build-up Film).

[0012] The step of removing the insulating layer formed on the metal pattern among the insulating layers may be a step of exposing at least a portion of the metal pattern.

[0013] The step of removing the insulating layer formed on the metal pattern among the insulating layers above may be a step of removing the insulating layer formed on the metal pattern using a CO2 laser or a UV laser.

[0014] The above protective layer can be formed using a positive photosensitive material or a negative photosensitive material.

[0015] The step of forming a protective layer on the insulating layer may not form a protective layer on at least a portion of the metal pattern.

[0016] The step of removing the metal pattern may be a step of etching the metal pattern using a metal etching solution to expose the glass substrate.

[0017] The step of forming a glass substrate unit by cutting the glass substrate along the location where the metal pattern of the glass substrate has been removed may include: the step of irradiating a glass-modifying laser at the location where the metal pattern of the glass substrate has been removed; and the step of etching the glass substrate to divide it into a plurality of glass substrate units.

[0018] The above glass-modified laser may be a Bessel beam.

[0019] The step of etching the glass substrate to divide it into a plurality of glass substrate units may include the step of etching the glass substrate using a glass etching solution at a vertical etching rate of 3 μm / min or more.

[0020] The step of removing the protective layer from the above glass substrate unit may be further included.

[0021] One embodiment of the present application provides a glass substrate unit manufactured by the aforementioned glass substrate singulation process.

[0022] One embodiment of the present application provides a glass substrate unit comprising: a first plane and a second plane facing each other; a first side connected to the first plane and inclined; and a second side connected to the second plane and inclined, wherein the first side and the second side meet roundly at the center of the thickness of the glass substrate unit, and the surface roughness (Ra) of the first side is 0.1 μm to 10 μm.

[0023] The first side has a taper angle of 50° to 70°, and the taper angle of the first side may be an angle between a plane perpendicular to the first plane and the first side.

[0024] According to a glass substrate singulation process according to one embodiment of the present application, when forming a glass substrate unit, micro-cracks do not occur on the cut surface of the glass substrate, and the cut surface forms an appropriate taper angle so that an edge grinding process is not required.

[0025] According to a glass substrate singulation process according to one embodiment of the present application, a glass substrate unit can be manufactured without damaging the insulating layer.

[0026] A glass substrate unit according to one embodiment of the present application has rounded edges, which reduces the possibility of damage from external impact and improves durability.

[0027] Figure 1 is a figure showing a conventional glass substrate singulation process.

[0028] FIGS. 2 to 5 illustrate problems with conventional singulation processes.

[0029] Figures 6a and 6b are figures illustrating a glass substrate singulation process according to the present invention.

[0030] FIG. 7 is a diagram showing the arrangement of a metal pattern according to the present invention.

[0031] FIG. 8 is a perspective view of a glass substrate unit according to the present invention.

[0032] FIG. 9 is a cross-sectional view of the edge portion of a unit of a glass substrate according to the present invention.

[0033] FIGS. 10 to 14 show cross-sectional views after singulation of a glass substrate according to an embodiment of the present invention.

[0034] [Explanation of the symbol]

[0035] 10: Glass substrate

[0036] 11: Metal pattern

[0037] 20: Insulating layer

[0038] 21: Laser for cutting insulation layers

[0039] 30: Protection layer

[0040] 31: Laser for internal deformation of glass substrates

[0041] 100: Glass substrate unit

[0042] The present application will be described in more detail below.

[0043] When a part in this application is described as "comprising" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.

[0044] In this application, "A to B" means "A or more and B or less".

[0045] In this application, when referring to the "surface" or "image" of an object, it may mean all parts of the object that come into contact with the outside.

[0046] In this application, a first direction (DR1), a second direction (DR2), and a third direction (DR3) are defined in the attached drawings. The first direction (DR1) and the second direction (DR2) may exist on the same plane and be perpendicular to each other. The first direction (DR1) and the third direction (DR3) may exist on another same plane and be perpendicular to each other. The second direction (DR2) and the third direction (DR3) may exist on yet another same plane and be perpendicular to each other. The first direction (DR1) may mean the horizontal direction in the drawings, and the second direction (DR2) may mean the vertical direction in the drawings. The third direction (DR3) may mean the upper and lower directions in the drawings, i.e., the thickness direction. The first to third directions (DR1, DR2, DR3) are relative to what is indicated in the drawings. In this application, unless otherwise specified, "direction" may refer to both directions facing each other that extend along that direction. Additionally, if it is necessary to distinguish between the two "directions" extending to both sides, one side shall be referred to as "direction side one" and the other side as "direction other side," respectively. The direction in which the arrow indicating the direction points may be the first side, and the opposite direction may be the other side.

[0047] In the following description, for convenience of explanation, when describing the surfaces of each member, the surface facing one side of the third direction (DR3) may be referred to as the upper surface, and the surface opposite to said surface may be referred to as the lower surface or the lower surface. However, this is not limited thereto, and said surface and said other surface of said member may be referred to as the front surface and the back surface, or as the first surface or the second surface, respectively. In addition, when describing the relative position of each member, one side of the third direction (DR3) may be referred to as the upper surface, and the other side of the third direction (DR3) may be referred to as the lower surface. Terms such as upper surface, lower surface, top, and bottom are relative concepts and are described based on the direction indicated in the drawing.

[0048] One embodiment of the present application provides the aforementioned glass substrate singulation process.

[0049] A glass substrate singulation process according to one embodiment of the present application can prevent damage to the glass substrate when removing the insulating layer by forming a metal pattern in the region where singulation of the glass substrate occurs, and can prevent damage to the insulating layer when etching the glass substrate by forming a protective layer on the insulating layer.

[0050] FIG. 1 illustrates a conventional glass substrate singulation process, wherein an insulating layer (20) is formed on both sides of a glass substrate (10), and the insulating layer (20) formed in the area where the glass substrate (10) is etched is removed using a laser (21) for removing the insulating layer. At this time, micro-cracks may occur in the glass substrate (10) by the laser (21). Subsequently, the glass substrate (10) is singulated by using a laser (31) for internal deformation of the glass substrate to cause phase displacement within the glass substrate (10) and etching the glass substrate (10). However, in the case of the conventional process, the cut area is not smooth due to cracks, etc., so the glass substrate unit (100) is manufactured through an additional edge grinding process.

[0051] Specifically, FIG. 2 illustrates a conventional singulation process using a Bessel beam. As shown in (A) of FIG. 2, a hole is machined in the glass substrate along the location to be cut, and at the same time, a glass crack is induced in the transverse direction, and then the substrate is physically cut to create a glass substrate unit as shown in (B). When cut in this way, the cut surface of the glass substrate unit is as shown in FIG. 3, and has a high surface roughness and multiple cracks.

[0052] In addition, Fig. 4 illustrates a conventional singulation process in which holes are formed in a glass substrate by laser ablation using a Bessel beam, and then the substrate is separated by cutting between the holes with a CO2 laser. When cut in this manner, the cut surface is as shown in Fig. 5, and similarly, there is a problem of high surface roughness and the presence of numerous cracks.

[0053] FIGS. 6a and 6b are flowcharts illustrating a glass substrate singulation process according to the present invention. The process is characterized by forming a metal pattern (11) on a glass substrate (10) prior to forming an insulating layer (20). By forming the metal pattern (11), damage to the glass substrate (10) can be prevented by the laser (21) used in the step of removing the insulating layer (20). Additionally, after removing the insulating layer (20), a protective layer (30) is formed on the insulating layer (20) to prevent damage to the insulating layer (20) during the subsequent glass substrate singulation step. After forming the protective layer (30), the metal pattern (11) is removed, and the interior of the glass substrate (10) is phase-displaced using a laser (31) for internal deformation of the glass substrate, and the glass substrate (10) is etched to perform singulation. Finally, the glass substrate unit (100) is manufactured by removing the protective layer (30). Since the glass substrate unit (100) according to the present invention does not have cracks on the cut surface, it is not necessary to perform an additional edge grinding process.

[0054] A glass substrate singulation process according to one embodiment of the present application comprises: a step of forming a metal pattern on one or both sides of a glass substrate; a step of forming an insulating layer on one or both sides of the glass substrate on which the metal pattern is formed; a step of removing the insulating layer formed on the metal pattern among the insulating layers; a step of forming a protective layer on the insulating layer; a step of removing the metal pattern; and a step of cutting the glass substrate along the location where the metal pattern of the glass substrate is removed to form a glass substrate unit.

[0055] In one embodiment of the present application, the glass substrate may include a plurality of through holes called TGVs (through-glass vias).

[0056] In one embodiment of the present application, the thickness of the glass substrate may be 0.3 mm to 1.2 mm.

[0057] In one embodiment of the present application, the thickness of the metal pattern formed on one or both sides of the glass substrate is 0.05 μm to 0.5 μm.

[0058] The metal pattern must be formed within the above thickness range to be effective for protecting the glass substrate. If the thickness is lower than the above, damage or cracks may occur on the surface of the glass substrate due to the UV laser used when removing the insulating layer, and if it is formed thicker than the above thickness, it may affect the adhesion and flatness when attaching the insulating layer.

[0059] In one embodiment of the present application, the metal pattern formed on one or both sides of the glass substrate may be formed with a width of 0.1 μm to 5 μm. The length of the metal pattern may be formed to match the singulation length.

[0060] In one embodiment of the present application, the step of forming the metal pattern is to form a singulation pattern on one or both sides of the glass substrate.

[0061] In one embodiment of the present application, the singulation pattern is formed to cover the location where singulation occurs. The singulation pattern may be a cutting location of the glass. The singulation pattern or metal pattern may be formed to surround the glass substrate unit.

[0062] In one embodiment of the present application, the shape of the glass substrate unit may be rectangular or trapezoidal, but is not particularly limited.

[0063] Referring to FIG. 7, in order to divide a glass substrate (10) into a plurality of glass substrate units (100), a singulation pattern (SP) is designed and a metal pattern (11) is formed to overlap with the singulation pattern (SP).

[0064] The above metal pattern can be formed using photoresist. After forming an electroless plating with secured adhesion on the surface of a glass substrate, a dry film is applied, and exposure and development are performed. Subsequently, the metal in a portion of the area is etched with an etchant, and the dry film is peeled off to form a metal pattern according to the pattern to be singulated.

[0065] In one embodiment of the present application, the metal pattern may be a Cu pattern.

[0066] If a Cu pattern is used as the metal pattern, damage to the glass substrate can be prevented when the insulating layer is removed. If a Ti / Cu pattern is used as the metal pattern, hydrofluoric acid ions must be used to remove Ti during the pattern formation process, but this is undesirable as the glass substrate may be damaged by the hydrofluoric acid ions.

[0067] In one embodiment of the present application, a metal pattern may be formed on both sides (upper and lower surfaces) of the glass substrate.

[0068] After forming a metal pattern on one or both sides of the glass substrate, an insulating layer can be formed on the glass substrate. At this time, the insulating layer can be formed to cover the metal pattern.

[0069] In one embodiment of the present application, the insulating layer may be a single layer or a multilayer. The insulating layer may have a multilayer structure. The insulating layer may include via holes, and a metal may be located in the via holes. In one embodiment, the insulating layer may be ABF (Ajinomoto Build-up Film).

[0070] In one embodiment of the present application, the thickness of the insulating layer may be 3 μm to 200 μm. In one embodiment of the present application, the thickness of the insulating layer may be 3 μm to 30 μm. By forming the insulating layer within the thickness range, an efficient build-up process is possible.

[0071] In one embodiment of the present application, the step of forming the insulating layer may include: laminating an insulating layer film on one or both sides of a glass substrate on which a metal pattern is formed; a via processing step; a desmearing step; and a curing step after metal pattern processing.

[0072] After forming the insulating layer, a portion of the insulating layer can be removed. The insulating layer in the area overlapping with the metal pattern can be removed, and at least a portion of the metal pattern can be exposed. The insulating layer in at least a portion of the area overlapping with the metal pattern may be removed, or the insulating layer in the entire area overlapping with the metal pattern may be removed. In the area to be removed, the insulating layer is completely removed in the thickness direction. Through this process, the insulating layer can be patterned according to the shape of the glass substrate unit.

[0073] In one embodiment of the present application, the step of removing the insulating layer formed on the metal pattern among the insulating layers may be a step of removing the insulating layer formed on the metal pattern using a CO2 laser or a UV laser.

[0074] In one embodiment of the present application, the CO2 laser or UV laser is not particularly limited as long as it is used in the art.

[0075] In one embodiment of the present application, a UV laser may be used in the step of removing the insulating layer formed on the metal pattern among the insulating layers.

[0076] A glass substrate singulation process according to one embodiment of the present application has the advantage that the glass substrate is not damaged when the insulating layer is removed, as a metal pattern is formed in the area where the insulating layer is removed.

[0077] After removing a portion of the insulating layer, a protective layer can be formed.

[0078] In one embodiment of the present application, the protective layer may be formed using a positive photosensitive material or a negative photosensitive material.

[0079] In one embodiment of the present application, the type of positive photosensitive material or negative photosensitive material is not particularly limited, and materials used in the art may be used.

[0080] In one embodiment of the present application, the thickness of the protective layer may be 1 μm or more. The protective layer must be stacked to a thickness of 1 μm or more to protect the insulating layer (ABF) from the etching solution.

[0081] In one embodiment of the present application, the thickness of the protective layer may be 1 μm to 5 μm.

[0082] In one embodiment of the present application, the thickness of the protective layer may be 1 μm to 2 μm.

[0083] In one embodiment of the present application, the step of forming a protective layer on the insulating layer may be performed by applying a protective layer composition to the surface of the insulating layer, and then pre-baking, exposing, and developing to form the protective layer.

[0084] In one embodiment of the present application, the protective layer composition may include a positive photosensitive material or a negative photosensitive material.

[0085] In one embodiment of the present application, the protective layer is formed on the surface of the insulating layer, and the protective layer is not formed on at least a portion of the metal pattern. Even after the protective layer is formed, at least a portion of the metal pattern is exposed.

[0086] After the protective layer is formed, the metal pattern can be removed.

[0087] In one embodiment of the present application, the step of removing the metal pattern may be a step of etching the metal pattern using a metal etching solution to expose the glass substrate. The glass substrate on the singulation pattern may be exposed.

[0088] In one embodiment of the present application, the step of etching the metal pattern may be performed through wet etching.

[0089] In one embodiment of the present application, the step of etching the metal pattern involves etching the metal etching solution onto the metal pattern using a spray method.

[0090] After removing the metal pattern, the glass substrate can be cut along the location where the metal pattern was removed.

[0091] In one embodiment of the present application, the step of forming a glass substrate unit by cutting the glass substrate along the location where the metal pattern of the glass substrate has been removed comprises: the step of irradiating a glass-modifying laser at the location where the metal pattern of the glass substrate has been removed; and the step of etching the glass substrate to divide it into a plurality of glass substrate units.

[0092] In one embodiment of the present application, the glass-modifying laser can form a modified region inside a glass substrate.

[0093] In one embodiment of the present application, the glass-modified laser is a Bessel beam.

[0094] In one embodiment of the present application, the step of irradiating a glass-modifying laser at a location where a metal pattern of the glass substrate has been removed may involve modifying an image inside the glass substrate using a Bessel beam before etching the glass substrate.

[0095] In one embodiment of the present application, the Bessel beam may use a wavelength of picoseconds or longer.

[0096] In one embodiment of the present application, the Bessel beam may use a wavelength of IR-pico (1064 nm) or lower.

[0097] In one embodiment of the present application, the Bessel beam may use a laser of 2 pico or less. If it exceeds this, there is a possibility that the phase displacement efficiency will decrease or microcracks will occur.

[0098] In one embodiment of the present application, by forming a deformation region inside the glass substrate before the step of etching the glass substrate to form a glass substrate unit, the inside of the glass substrate is phase-displaced, thereby increasing the etching speed in the subsequent etching step of the glass substrate.

[0099] In one embodiment of the present application, the step of etching the glass substrate to divide it into a plurality of glass substrate units may include the step of etching the glass substrate using a glass etching solution at a vertical etching rate of 3 μm / min or more.

[0100] In one embodiment of the present application, the glass etching solution is not particularly limited but may include hydrofluoric acid.

[0101] In one embodiment of the present application, the glass etching solution may further include an auxiliary etchant and an additive.

[0102] In one embodiment of the present application, the step of etching the glass substrate to form a glass substrate unit may include the step of treating the glass substrate to be etched with an etching solution by a spray method.

[0103] In one embodiment of the present application, the vertical etching rate refers to the etching rate in the thickness direction of the glass substrate.

[0104] In one embodiment of the present application, the vertical etching rate may be 3 μm / min to 10 μm / min.

[0105] In one embodiment of the present application, the glass substrate singulation process further includes the step of removing a protective layer from the glass substrate unit. After removing the protective layer, an insulating layer may be exposed.

[0106] In one embodiment of the present application, the step of removing the protective layer from the glass substrate unit is to process the stripping solution using a spray method.

[0107] According to the glass substrate singulation process according to one embodiment of the present application, a glass substrate unit with a smooth surface can be obtained without a grinding process of the cut surface after the removal of the protective layer.

[0108] One embodiment of the present application provides a glass substrate unit. The glass substrate unit can be manufactured by the glass substrate singulation process described above.

[0109] A glass substrate unit manufactured according to one embodiment of the present application does not contain microcracks on the cut surface of the glass substrate.

[0110] FIG. 8 is a perspective view of the edge portion of the glass substrate unit (100). The edge portion is the part adjacent to the cut plane. FIG. 9 is a cross-sectional view of the edge portion of the glass substrate unit (100).

[0111] A glass substrate unit (10) according to one embodiment of the present application comprises: a first plane (S1) and a second plane (S2) facing each other; a first side (ED1) that is inclined and connected to the first plane (S1); and a second side (ED2) that is inclined and connected to the second plane (S2).

[0112] The first plane (S1) may be an upper plane, the second plane (S2) may be a lower plane, and the first side (ED1) and the second side (ED2) may be cut surfaces.

[0113] The first side (ED1) and the second side (ED2) are each part of the side of the glass substrate unit (100), the first side (ED1) may be an upper part in the thickness direction (DR3), and the second side (ED2) may be a lower part in the thickness direction (DR3). The first side (ED1) is inclined or sagging towards the thickness center from the first plane (S1). The second side (ED2) is inclined or sagging towards the thickness center from the second plane (S2).

[0114] In one embodiment of the present application, the first side (ED1) and the second side (ED2) meet in a rounded manner at the center of the thickness (CT) of the glass substrate unit (100). The end of the edge portion where the first side (ED1) and the second side (ED2) meet is not pointed but rounded. As a result, the possibility of damage from external impact is reduced and durability can be improved.

[0115] In one embodiment of the present application, the thickness center (CT) of the glass substrate unit (100) is a portion having a height of 0.45 to 0.55 times the thickness (T1) of the glass substrate unit (100) from the second plane (S2). That is, the portion from 45% height to 55% height of the thickness (T1) of the glass substrate unit (100) from the second plane (S2) is called the thickness center (CT) of the glass substrate unit (100).

[0116] In one embodiment of the present application, the side of the glass substrate unit (100) may include a rounded portion at the center of thickness (CT).

[0117] In one embodiment of the present application, the first side (ED1) of the glass substrate unit (100) may be flat from the first plane (S1) to a height of less than 45% of the thickness (T1) of the glass substrate unit (100). In parts other than the center of the thickness (CT), the first side (ED1) is not rounded and is flat.

[0118] In one embodiment of the present application, the second side (ED2) of the glass substrate unit (100) may be flat from the second plane (S2) to a height of less than 45% of the thickness (T1) of the glass substrate unit (100). In parts other than the center of the thickness (CT), the second side (ED2) is not rounded and is flat.

[0119] In one embodiment of the present application, the radius of curvature of the rounded portion at the center of the thickness (CT) is 20 mm or less. When viewing the glass substrate unit (100) from the side, a virtual circle including the rounded portion on the side can be set, and the radius of the virtual circle can be defined as the size of the round. In one embodiment, the radius of curvature of the rounded portion is 5 mm to 20 mm.

[0120] In one embodiment of the present application, the surface roughness (Ra) of the first side (ED1) is 0.1 μm to 10 μm.

[0121] In one embodiment of the present application, the surface roughness (Ra) of the first side (ED1) is 0.1 μm to 5 μm.

[0122] In one embodiment of the present application, the surface roughness (Ra) of the first side (ED1) is 0.1 μm to 1 μm.

[0123] In one embodiment of the present application, the surface roughness (Ra) of the second side (ED2) is 0.1 μm to 10 μm.

[0124] In one embodiment of the present application, the surface roughness (Ra) of the second side (ED2) is 0.1 μm to 5 μm.

[0125] In one embodiment of the present application, the surface roughness (Ra) of the second side (ED2) is 0.1 μm to 1 μm.

[0126] In this application, surface roughness (Ra) may be measured by a method known to those skilled in the art. Surface roughness (Ra) may be measured according to ISO 4287, ISO 25178, or ASTM E1421. In one embodiment, the surface roughness of the glass substrate unit (100) may be measured according to ISO 25178 using the Ra measurement mode of a Keyence 3D confocal microscope. The surface roughness (Ra) of the first side (ED1) and the second side (ED2) may be measured in a flat position.

[0127] The first side (ED1) and the second side (ED2) of the glass substrate unit (100) have a low surface roughness (Ra), so that the mechanical strength may be excellent.

[0128] In one embodiment of the present application, the first side (ED1) has a taper angle (Ta1) of 50° to 70°. The taper angle of the first side (ED1) is the angle between the plane perpendicular to the first plane (S1) and the first side (ED1). When the taper angle is within the above range, no additional edge grinding process is required.

[0129] In one embodiment of the present application, the second side (ED2) has a taper angle (Ta2) of 50° to 70°. The taper angle of the second side (ED2) is the angle between the plane perpendicular to the first plane (S1) and the second side (ED1). When the taper angle is within the above range, no additional edge grinding process is required.

[0130] In one embodiment of the present application, when a TGV hole is formed at the center of the glass substrate unit (100), the taper angle of the TGV hole may be different from the taper angle of the first side (ED1). The taper angle of the TGV hole may be different from the taper angle of the second side (ED2). The formation of the TGV hole and the penetration for singulation do not proceed simultaneously.

[0131] In one embodiment of the present application, the thickness (T) of the glass substrate unit (100) may be 0.3 mm to 1.2 mm.

[0132] A glass substrate unit manufactured according to the present application can be used for semiconductor packaging. Specifically, the glass substrate unit according to the present application can be used to package semiconductor chips / devices. More specifically, semiconductor packaging is a general term for post-processing technology that cuts a processed wafer into a chip shape and packages it, and glass substrates are attracting attention as next-generation semiconductor packaging materials that play a role in physically / electrically connecting semiconductor chips to a system. In order to be used as a semiconductor packaging material, roles such as mechanical protection, electrical / mechanical connection, and heat dissipation are required. In particular, in the case of TGV hole substrates, the glass substrate contains fine electrode channels that facilitate the flow of electricity, which has the advantage of enabling the mounting of more chips and high-performance chips.

[0133] The glass substrate unit manufactured according to the present application can be applied to package fields requiring a large area, such as AI, High Performance Computer (HPC), Data Center, Server, and Networking, and can be applied particularly to generative AI and HPC.

[0134] Hereinafter, the present application will be described in detail with reference to examples to specifically explain the present application. However, the embodiments according to the present application may be modified in various different forms, and the scope of the present application is not to be interpreted as being limited to the embodiments described below. The embodiments of the present application are provided to more completely explain the present application to those with average knowledge in the art.

[0135] <Example 1>

[0136] On a glass substrate with a thickness of 600 μm, after treating both sides of the glass substrate with an adhesion enhancement treatment based on the singulation position, electroless Cu plating was performed, and then a pattern was formed using a positive photoresist. Subsequently, Cu etching and peeling off the photoresist were performed to form a Cu pattern with a thickness of 0.05 μm and a width of 0.5 μm along the singulation position.

[0137] Subsequently, a multi-stage stacking and patterning process was performed on both sides of the glass substrate using ABF to form a thickness of 7 to 200 μm, and an insulating layer formed at the location to be singulated was removed using a UV laser. A protective layer with a thickness of 2 μm was formed by applying a negative photosensitive material to the surface of the insulating layer, and a Cu pattern was removed using a metal etching solution. Afterward, phase displacement was applied at 1 μm intervals to the substrate surface at the location to be singulated using a 400 femtosecond laser (38 μJ), and then both sides of the glass substrate were treated for 30 minutes using a glass etching solution via a spray method to perform singulation, and the protective layer was removed using a dedicated stripper. At this time, the taper angle was 65 degrees, the surface roughness at the first and second surfaces was 0.49 μm, and the cross-sectional SEM measurement results are shown in Fig. 10.

[0138] <Example 2>

[0139] Except for using a glass substrate with a thickness of 1100 μm, the Cu pattern formation, insulating layer formation, partial insulating layer removal, and Cu pattern removal were performed in the same manner as in Example 1.

[0140] Subsequently, a laser phase displacement is applied to the surface of the substrate at the location to be singulated. At this time, the laser has a pulse width of 1 picosecond and a single pulse energy of 75 μJ, and phase displacement is applied at intervals of 1.2 μm. The focal position of the laser was set to 100 μm. Subsequently, singulation was performed on both sides of the glass substrate by S-EPD (Singulation End Point Detection) using a glass etching solution for 30 minutes (etch selectivity: 2.96). The protective layer was removed using a dedicated stripper. At this time, the taper angle was 60 degrees, the surface roughness on the first and second surfaces was 0.8 μm, and the results of observing the cross-section are shown in Figures 11 to 14.

[0141] FIG. 11 is an SEM image of a cross-section of a glass substrate unit viewed from the front, FIG. 12 is an optical microscope image of the center of the cross-section of the glass substrate unit, FIG. 13 is an SEM image of the edge of the glass substrate unit viewed obliquely, and FIG. 14 is an SEM image of the glass substrate unit viewed from the side. The magnification of the SEM and optical microscope images is 50 to 300 times. Through FIG. 14, the taper angles of the first side and the second side are each 60 o It can be seen that. Through this, it can be seen that no cracks occur on the cut surface.

Claims

1. A step of forming a metal pattern on one or both sides of a glass substrate; A step of forming an insulating layer on one or both sides of a glass substrate on which the above metal pattern is formed; A step of removing the insulating layer formed on the metal pattern among the insulating layers; A step of forming a protective layer on the insulating layer; Step of removing the above metal pattern; and A glass substrate singulation process comprising the step of cutting the glass substrate along the location where the metal pattern of the glass substrate is removed to form a glass substrate unit.

2. In Claim 1, A glass substrate singulation process in which the metal pattern above is a Cu pattern.

3. In Claim 1, A glass substrate singulation process in which the insulating layer is ABF (Ajinomoto Build-up Film).

4. In Claim 1, The step of removing the insulating layer formed on the metal pattern among the insulating layers is, A glass substrate singulation process that is a step of exposing at least a portion of the metal pattern.

5. In Claim 1, A glass substrate singulation process in which the step of removing an insulating layer formed on a metal pattern among the insulating layers is a step of removing an insulating layer formed on a metal pattern using a CO2 laser or a UV laser.

6. In Claim 1, The above protective layer is formed using a positive photosensitive material or a negative photosensitive material in a glass substrate singulation process.

7. In Claim 1, The step of forming a protective layer on the insulating layer is, A glass substrate singulation process that does not form a protective layer on at least a portion of the metal pattern.

8. In Claim 1, A glass substrate singulation process in which the step of removing the metal pattern is a step of etching the metal pattern using a metal etching solution to expose the glass substrate.

9. In Claim 1, The step of forming a glass substrate unit by cutting the glass substrate along the location where the metal pattern of the glass substrate has been removed is: A step of irradiating a glass-modifying laser at a location where the metal pattern of the glass substrate has been removed; and A glass substrate singulation process comprising the step of etching the glass substrate to divide it into a plurality of glass substrate units.

10. In Claim 9, The above glass-modified laser is a Bessel beam in the glass substrate singulation process.

11. In Claim 9, A glass substrate singulation process in which the step of etching the glass substrate to divide it into a plurality of glass substrate units includes the step of etching the glass substrate using a glass etching solution at a vertical etching rate of 3 μm / min or more.

12. In Claim 1, A glass substrate singulation process further comprising the step of removing a protective layer from the above glass substrate unit.

13. A glass substrate unit manufactured by a glass substrate singulation process according to any one of claims 1 to 12.

14. A first plane and a second plane facing each other; A first inclined side connected to the first plane above; and A glass substrate unit including a second inclined side connected to the second plane, The first side and the second side meet roundly at the center of the thickness of the glass substrate unit, and A glass substrate unit having a surface roughness (Ra) of the first side of the above-mentioned first side of 0.1㎛ to 10㎛.

15. In Claim 14, The first side has a taper angle of 50° to 70°, A glass substrate unit in which the taper angle of the first side is the angle between a plane perpendicular to the first plane and the first side.

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