Method for stabilizing plasma processing apparatus, and plasma processing apparatus

Abstract

A method for stabilizing a plasma processing apparatus according to one embodiment of the present disclosure includes: performing a seasoning process by supplying plasma that is generated from a seasoning gas which contains a hydrogen-containing gas into a processing chamber; and performing a dummy process. The dummy process includes: performing a film-forming process for supplying plasma that is generated from a film-forming gas into the processing chamber and forming a film on the inner surface of the processing chamber; and performing a cleaning process for supplying plasma that is generated from a cleaning gas which contains a halogen-containing gas into the processing chamber and cleaning the inside of the processing chamber.

Description

Method for Stabilizing Plasma Processing Apparatus and Plasma Processing Apparatus

[0001] The present disclosure relates to a method for stabilizing a plasma processing apparatus and a plasma processing apparatus.

[0002] Patent Document 1 discloses a technique of performing a precoat treatment before performing a film formation treatment in a processing container.

[0003] Japanese Patent Application Laid-Open No. 2006-294816

[0004] The present disclosure provides a technique capable of stabilizing the surface inside the processing container in a short time.

[0005] A method for stabilizing a plasma processing apparatus according to an aspect of the present disclosure includes performing a seasoning process by supplying plasma generated from a seasoning gas containing a hydrogen-containing gas into a processing container, and performing a dummy process. Performing the dummy process includes supplying plasma generated from a film formation gas into the processing container and performing a film formation process of forming a film on the surface inside the processing container, and supplying plasma generated from a cleaning gas containing a halogen-containing gas into the processing container and performing a cleaning process of cleaning the inside of the processing container.

[0006] According to the present disclosure, the surface inside the processing container can be stabilized in a short time.

[0007] It is a schematic cross-sectional view showing a plasma processing apparatus according to an embodiment. It is a diagram showing a method for stabilizing a plasma processing apparatus according to an embodiment. It is a diagram showing an example of a dummy process. It is a schematic cross-sectional view showing a top plate not subjected to seasoning treatment. It is a schematic cross-sectional view showing a top plate subjected to seasoning treatment. It is a diagram (1) showing the measurement result of the number of particles. It is a diagram (2) showing the measurement result of the number of particles. It is a diagram (3) showing the measurement result of the number of particles. It is a diagram (4) showing the measurement result of the number of particles.

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding members or components are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted.

[0009] [Plasma Processing Apparatus] A plasma processing apparatus 1 according to an embodiment will be described with reference to Figure 1. Figure 1 is a schematic cross-sectional view showing the plasma processing apparatus 1 according to an embodiment.

[0010] The plasma processing apparatus 1 comprises a processing vessel 10 and a plasma source 2. The processing vessel 10 has a substantially cylindrical shape. The processing vessel 10 is made of a metal material such as aluminum and is airtight. The processing vessel 10 is grounded. The plasma source 2 introduces microwaves of a predetermined power into the processing vessel 10 to form a surface wave plasma. The top plate 10a of the processing vessel 10 is made of a metal body into which a plurality of dielectric members (hereinafter referred to as dielectric windows 56) of a microwave radiation mechanism 42 are fitted. As a result, the plasma source 2 introduces microwaves into the processing vessel 10 through the plurality of dielectric windows 56 of the top plate 10a.

[0011] The plasma processing apparatus 1 has a control unit 90. The control unit 90 is an electronic circuit such as a CPU (Central Processing Unit), FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit). The control unit 90 performs various control operations described in this specification by executing instruction codes stored in memory or by circuit design for special applications.

[0012] Inside the processing container 10, a mounting base 11 is supported by a cylindrical support member 12 via an insulating member 12a at the center of the bottom of the processing container 10. The mounting base 11 horizontally supports the substrate W. The materials constituting the mounting base 11 and the support member 12 are, for example, metals such as aluminum with anodized (anodic oxidation) surfaces, or insulating materials (ceramics, etc.) having high-frequency electrodes inside.

[0013] The mounting table 11 is equipped with a temperature control mechanism, a gas channel for supplying heat transfer gas to the back surface of the substrate W, and pins that move up and down to transport the substrate W. The mounting table 11 may also be equipped with an electrostatic chuck for electrostatically adsorbing the substrate W.

[0014] A DC power supply 14 is connected to the mounting table 11. The DC voltage supplied from the DC power supply 14 to the mounting table 11 draws ions from the plasma towards the substrate W, contributing to improved film quality and uniformity of the substrate W processing. A high-frequency power supply may be connected instead of the DC power supply 14. Neither the DC power supply 14 nor the high-frequency power supply is necessarily connected.

[0015] An exhaust pipe 15 is connected to the bottom of the processing container 10. An exhaust device 16, including a vacuum pump, is connected to the exhaust pipe 15. By operating the exhaust device 16, the inside of the processing container 10 can be evacuated, and the pressure inside the processing container 10 can be reduced to a predetermined pressure. The side wall 10b of the processing container 10 is provided with an inlet / outlet 17 for loading and unloading substrates W, and a gate valve 18 for opening and closing the inlet / outlet 17.

[0016] The plasma processing apparatus 1 includes a first gas shower section 21, a second gas shower section 22, and a third gas shower section 23. The first gas shower section 21 discharges a predetermined gas into the processing container 10 from the top plate 10a of the processing container 10. The second gas shower section 22 introduces gas from a position between the top plate 10a and the mounting base 11. The third gas shower section 23 introduces gas from a position between the top plate 10a and the mounting base 11 inside the processing container 10, but outside of the position of the second gas shower section 22.

[0017] The first gas shower section 21 and the second gas shower section 22 are shown in Figure 1 at positions that are radially offset for convenience, but they are arranged alternately on the same circle. The first gas shower section 21 is provided on the top plate 10a of the processing container 10 and supplies gas transported from the gas supply section 81 through the gas line 82 from a first position. The second gas shower section 22 is provided on the top plate 10a of the processing container 10 and supplies gas transported from the gas supply section 81 through the gas line 83 from a second position lower than the first position. The third gas shower section 23 is provided on the side wall 10b of the processing container 10 and supplies gas transported from the gas supply section 81 through the gas line 84 from a third position lower than the first position.

[0018] The plasma source 2 includes a microwave output unit 30 that distributes microwaves to multiple paths and outputs microwaves, and a microwave transmission unit 40 that transmits the microwaves output from the microwave output unit 30.

[0019] The microwave output unit 30 includes a microwave power supply, a microwave oscillator, an amplifier, and a distributor. The microwave power supply supplies power to the microwave oscillator. The microwave oscillator generates microwaves at a predetermined frequency (e.g., 860 MHz) using, for example, a PLL oscillation. The amplifier amplifies the generated microwaves. The distributor distributes the microwaves amplified by the amplifier while matching the impedance of the input and output sides to minimize microwave loss. In addition to 860 MHz, various frequencies in the range of 700 MHz to 3 GHz, such as 915 MHz, can be used as the microwave frequency.

[0020] The microwave transmission unit 40 has a plurality of amplifier units 41 and a plurality of microwave radiation mechanisms 42 provided corresponding to the amplifier units 41. For example, one microwave radiation mechanism 42 is located in the center of the top plate 10a, and six more are arranged at equal intervals around the circumference centered on the central one, for a total of seven. In this example, they are arranged such that the distance between the central microwave radiation mechanism 42 and the outer microwave radiation mechanisms 42 is equal to the distance between the outer microwave radiation mechanisms 42.

[0021] The amplifier section 41 amplifies the microwaves distributed by the distributor and guides them to each microwave radiation mechanism 42. The microwave radiation mechanism 42 has a coaxial tube 51. The coaxial tube 51 has a coaxial microwave transmission path consisting of a cylindrical outer conductor 51a and a rod-shaped inner conductor 51b located in its center. The microwave radiation mechanism 42 has a feeding antenna (not shown) that supplies the microwaves amplified by the amplifier section 41 to the coaxial tube 51. The microwave radiation mechanism 42 has a tuner that matches the impedance of the load to the characteristic impedance of the microwave power supply and an antenna section that radiates microwaves from the coaxial tube into the processing container 10.

[0022] The antenna section is located at the lower end of the coaxial tube 51 and is fitted into the metal portion of the top plate 10a of the processing container 10. The antenna section has a dielectric window 56, and microwaves transmitted through the dielectric window 56 generate surface wave plasma in the processing container 10 directly below the dielectric window 56.

[0023] Multiple plasma sources 2 (dielectric windows 56) are provided: one in the center of the ceiling and six on the outer periphery. Each of the multiple plasma sources 2 (dielectric windows 56) can independently control the microwave power supplied from each plasma source 2. The microwave power supplied from the plasma sources 2 (dielectric windows 56) on the outer periphery may be higher, lower, or the same as the microwave power supplied from the plasma source 2 in the center.

[0024] The surface of the top plate 10a inside the processing container 10 is covered with a thermal spray coating SF. The thermal spray coating SF is formed from a plasma-resistant material. The plasma-resistant material is yttria (Y ２ O ３ The material may be a ceramic material such as aluminum. The thermal spray coating SF protects the surface of the top plate 10a inside the processing container 10 from the plasma during plasma processing and reduces the generation of particles caused by the metal material such as aluminum that makes up the top plate 10a. The surface of the second gas shower section 22 is also covered with the thermal spray coating SF, similar to the surface of the top plate 10a inside the processing container 10.

[0025] However, it is difficult to completely cover the surface of the top plate 10a inside the processing container 10 with the thermal spray coating SF. For example, there may be exposed areas where the metal material is not covered by the thermal spray coating SF, such as the edges of the top plate 10a inside the processing container 10 (region A1 in Figure 1) and the boundary between the top plate 10a and the dielectric window 56 (region A2 in Figure 1). During plasma processing, particles originating from metal materials such as aluminum are generated starting from these exposed areas. In particular, particle generation is likely to occur when the top plate 10a is new and the plasma processing is performed using high-power microwaves.

[0026] One method to reduce particle generation is to stabilize the surface inside the processing container 10 by alternately repeating a pre-coating process and a cleaning process. However, this method requires a long time to stabilize the surface inside the processing container 10.

[0027] The following describes a method for stabilizing the plasma processing apparatus 1, which can stabilize the surface inside the processing container 10 in a short time.

[0028] [Method for stabilizing the plasma processing apparatus] A method for stabilizing the plasma processing apparatus 1 according to the embodiment will be described with reference to Figures 2 and 3. Figure 2 is a diagram showing the method for stabilizing the plasma processing apparatus 1 according to the embodiment. Figure 3 is a diagram showing an example of dummy processing.

[0029] The stabilization method for the plasma processing apparatus 1 according to the embodiment is performed, for example, after the top plate 10a has been replaced with a new one, and before plasma processing is performed on the product substrate in the processing container 10. The plasma processing on the product substrate is a process in which a silicon nitride film is formed on the product substrate by, for example, atomic layer deposition (ALD) or chemical vapor deposition (CVD) using plasma. The stabilization method for the plasma processing apparatus 1 according to the embodiment comprises steps S1 to S4 shown in Figure 2.

[0030] In step S1, the control unit 90 controls the plasma processing apparatus 1 to perform dummy processing. The dummy processing has steps S11 to S14 shown in Figure 3.

[0031] In step S11, the control unit 90 supplies microwaves of first power into the processing container 10 and performs a first film deposition process in which a first film is formed on the surface inside the processing container 10 by plasma generated from the first film deposition gas using microwaves of first power. The purpose of the first film deposition process is to ensure close contact between the side walls inside the processing container 10 and the silicon nitride film, and conditions are used that make it difficult for particles to be generated due to insufficient adhesion of the silicon nitride film. For this reason, the conditions for the first film deposition process are different from those for the plasma treatment of the product substrate. The first film deposition gas may contain a silicon-containing gas and a nitrogen-containing gas. In this case, a silicon nitride film can be formed as the first film. The silicon-containing gas may be supplied from at least one of the second gas shower section 22 and the third gas shower section 23. By supplying the silicon-containing gas from a second position and / or a third position lower than the first position of the first gas shower section 21, excessive dissociation of the silicon-containing gas can be reduced. The silicon-containing gas is, for example, monosilane gas. Furthermore, for example, the silicon-containing gas may be disilane gas. The nitrogen-containing gas may be supplied from at least one of the first gas shower section 21, the second gas shower section 22, and the third gas shower section 23. The nitrogen-containing gas may be, for example, ammonia gas. Furthermore, for example, the nitrogen-containing gas may be nitrogen gas.

[0032] In step S12, the control unit 90 supplies microwaves of second power into the processing container 10 and performs a second film deposition process in which a second film is formed on the surface inside the processing container 10 by plasma generated from the second film deposition gas using microwaves of second power. The purpose of the second film deposition process is to stabilize the silicon nitride film deposited on the product substrate. For this reason, the conditions for the second film deposition process are the same as those for the plasma treatment of the product substrate. The second film deposition gas may contain a silicon-containing gas and a nitrogen-containing gas. In this case, a silicon nitride film can be formed as the second film. The silicon-containing gas may be supplied from at least one of the second gas shower section 22 and the third gas shower section 23. By supplying the silicon-containing gas from a second position and / or a third position lower than the first position of the first gas shower section 21, excessive dissociation of the silicon-containing gas can be reduced. The silicon-containing gas is, for example, monosilane gas. Alternatively, for example, the silicon-containing gas may be disilane gas. The nitrogen-containing gas may be supplied from at least one of the first gas shower section 21, the second gas shower section 22, and the third gas shower section 23. The nitrogen-containing gas is, for example, ammonia gas. Alternatively, the nitrogen-containing gas may be nitrogen gas.

[0033] In step S13, the control unit 90 supplies microwaves of a third power to the processing container 10 and performs a cleaning process in which the inside of the processing container 10 is cleaned by plasma generated from the cleaning gas using microwaves of a third power. The cleaning gas contains a halogen-containing gas. The halogen-containing gas may be supplied from the first gas shower unit 21. By supplying the halogen-containing gas from the first gas shower unit 21, the dissociation of the halogen-containing gas can be promoted. The halogen-containing gas is, for example, nitrogen trifluoride gas.

[0034] In step S14, the control unit 90 determines whether steps S11 to S13 have been performed a first time. If the number of executions has not reached the first time (NO in step S14), the control unit 90 performs steps S11 to S13 again. If the number of executions has reached the first time (YES in step S14), the control unit 90 terminates the dummy processing and proceeds to step S2. In this way, the control unit 90 controls the plasma processing apparatus 1 to repeat steps S11 to S13 until the number of executions reaches the first time. The first time is, for example, two or more times. The first time may be one time.

[0035] In step S2, the control unit 90 performs a seasoning process by supplying plasma generated from the seasoning gas into the processing container 10 using microwaves of a fourth power. The seasoning process may be performed under conditions that result in a higher electron temperature and higher electron density than the plasma treatment on the product substrate. The seasoning gas includes a hydrogen-containing gas and an inert gas. The hydrogen-containing gas and the inert gas may be supplied from at least one of the first gas shower section 21, the second gas shower section 22, and the third gas shower section 23. The hydrogen-containing gas is, for example, ammonia gas. Alternatively, for example, the hydrogen-containing gas may be hydrogen gas. The inert gas is, for example, argon gas. In this case, a high electron temperature and high electron density are easily obtained. Alternatively, for example, the inert gas may be helium gas or nitrogen gas. The seasoning gas does not necessarily have to contain an inert gas.

[0036] In step S3, the control unit 90 determines whether steps S1 and S2 have been performed a second time. If the number of executions has not reached the second time (NO in step S3), the control unit 90 performs steps S1 and S2 again. If the number of executions has reached the second time (YES in step S3), the control unit 90 proceeds to step S4. In this way, the control unit 90 controls the plasma processing apparatus 1 to repeat steps S1 and S2 until the number of executions reaches the second time. The second time is, for example, two or more times. The second time may be one time.

[0037] In step S4, the control unit 90 controls the plasma processing apparatus 1 to execute dummy processing. The dummy processing in step S4 may be the same as the dummy processing in step S1. After executing the dummy processing in step S4, the control unit 90 ends the processing.

[0038] Next, referring to FIGS. 4 and 5, the effects of the seasoning process in the stabilization method of the plasma processing apparatus 1 according to the embodiment will be described. FIGS. 4 and 5 are enlarged views of the boundary portion (region A2 in FIG. 1) between the top plate 10a and the dielectric window 56. FIG. 4 is a schematic cross-sectional view showing the top plate 10a without the seasoning process. FIG. 5 is a schematic cross-sectional view showing the top plate 10a with the seasoning process.

[0039] As shown in FIG. 4, on the top plate 10a without the seasoning process, there may be a protrusion 10c due to processing variations. If the protrusion 10c exists in the narrow gap between the top plate 10a and the dielectric window 56, the protrusion 10c may be exposed without being covered by the sprayed film SF. In this case, it is considered that discharge occurs starting from the protrusion 10c during plasma processing, generating particles caused by a metal material such as aluminum.

[0040] As shown in FIG. 5, when the seasoning process is performed in the processing container 10, the surface of the top plate 10a is flattened and the protrusion 10c disappears, and no discharge occurs starting from the protrusion 10c. Therefore, it is considered that the generation of particles caused by a metal material such as aluminum can be reduced.

[0041] As described above, according to the stabilization method of the plasma processing apparatus 1 according to the embodiment, the seasoning process and the dummy process are performed. In the seasoning process, the surface inside the processing container 10 is flattened. In the dummy process, radicals (for example, fluorine radicals) in the plasma generated from the halogen-containing gas during the cleaning process halogenate (for example, fluorinate) the surface of the exposed portion inside the processing container 10 to stabilize it. By combining these processes, the surface inside the processing container 10 can be stabilized in a short time. Also, the variation in the time required for stabilization between plasma processing apparatuses 1 can be reduced.

[0042] According to the stabilization method of the plasma processing apparatus 1 according to the embodiment, a dummy process may be performed after the seasoning process. In this case, after reducing the surface area of the exposed portion in the processing vessel 10, the surface of the exposed portion can be fluorinated.

[0043] According to the stabilization method of the plasma processing apparatus 1 according to the embodiment, the dummy process may be performed first among the seasoning process and the dummy process. In this case, yttria constituting the sprayed film SF reacts with the halogen-containing gas during the cleaning process included in the dummy process, and the surface of the sprayed film SF is covered with a passive film. Therefore, since the sprayed film SF is protected by the passive film during the seasoning process, damage to the sprayed film SF can be reduced.

[0044] According to the stabilization method of the plasma processing apparatus 1 according to the embodiment, the dummy process may be performed last among the seasoning process and the dummy process. In this case, yttria constituting the sprayed film SF reacts with the halogen-containing gas, and the surface of the sprayed film SF is covered with a passive film. Therefore, since the sprayed film SF is protected by the passive film when performing the product process, generation of particles from the sprayed film SF can be reduced.

[0045] In the above embodiment, the case where the dummy process includes the first film forming process (step S11), the second film forming process (step S12), and the cleaning process (step S13) has been described, but it is not limited thereto. For example, either one of the first film forming process and the second film forming process may be omitted.

[0046] [Experimental Results] Referring to FIGS. 6 to 9, the results of measuring the number of particles on the substrate W when the plasma processing is performed on the substrate W in the plasma processing apparatus 1 after performing the stabilization method of the plasma processing apparatus 1 according to the embodiment will be described. The experimental conditions are as follows.

[0047] <Conditions for the first film deposition process (step S11)> ・First film deposition gas: Monosilane gas + ammonia gas ・Pressure inside the processing container 10: 6 Pa to 100 Pa (e.g., 10 Pa) ・Microwave power (first power): 1.2 kW to 7.0 kW (e.g., 3.0 kW) ・Substrate temperature: 200°C to 500°C (e.g., 400°C)

[0048] <Conditions for the second film deposition process (step S12)> ・Second film deposition gas: Monosilane gas + ammonia gas ・Pressure inside the processing container 10: 6 Pa to 100 Pa (e.g., 10 Pa) ・Microwave power (first power): 1.2 kW to 7.0 kW (e.g., 5.0 kW) ・Substrate temperature: 200°C to 500°C (e.g., 400°C)

[0049] <Conditions for cleaning process (step S13)> ・Cleaning gas: Mixed gas of nitrogen trifluoride and argon (NF ３ / Ar), a mixed gas of nitrogen trifluoride and helium gas (NF ３ / He) • Pressure inside processing container 10: 6 Pa to 100 Pa (e.g., 67 Pa) • Microwave power (first power): 1.2 kW to 7.0 kW (e.g., 3.0 kW) • Substrate temperature: 200°C to 500°C (e.g., 400°C)

[0050] <Conditions for seasoning treatment (step S2)> ・Seasoning gas: Ammonia gas (NH ３ ), a mixture of ammonia gas and argon gas (NH ３ / Ar), a mixed gas of hydrogen gas and argon gas (H ２ / Ar) • Pressure inside processing container 10: 6 Pa to 100 Pa (e.g., 20 Pa) • Microwave power (first power): 1.2 kW to 7.0 kW (e.g., 5.0 kW) • Substrate temperature: 200°C to 500°C (e.g., 400°C)

[0051] <Number of repetitions> - First repetition: 1 to 30 times (for example, 10 times) - Second repetition: 1 to 10 times (for example, 5 times)

[0052] For comparison, in the stabilization method of the plasma processing apparatus 1 according to the embodiment, the number of particles on the substrate W was measured after performing only dummy processing without seasoning processing, and then performing plasma processing on the substrate W with the plasma processing apparatus 1.

[0053] Figures 6 to 9 show the measurement results of the number of particles. Figure 6 shows the results when the seasoning gas is ammonia gas. Figure 7 shows the results when the seasoning gas is a mixture of ammonia gas and argon gas. Figure 8 shows the results when the seasoning gas is a mixture of hydrogen gas and argon gas. Figure 9 shows the results when no seasoning treatment is performed. In Figures 6 to 8, the horizontal axis shows the total time [h] for the seasoning treatment and dummy treatment, and the vertical axis shows the number of particles [particles] on the substrate W. In Figure 9, the horizontal axis shows the time [h] for the dummy treatment, and the vertical axis shows the number of particles [particles] on the substrate W.

[0054] As shown in Figure 6, when the seasoning gas is ammonia gas, it can be seen that the number of particles on the substrate W becomes almost zero after a total of 18 hours of seasoning and dummy processing time.

[0055] As shown in Figure 7, when the seasoning gas is a mixture of ammonia and argon gas, it can be seen that the number of particles on the substrate W becomes almost zero after a total seasoning and dummy treatment time of 12 hours.

[0056] As shown in Figure 8, when the seasoning gas is a mixture of hydrogen gas and argon gas, it can be seen that the number of particles on the substrate W becomes almost zero after a total seasoning and dummy treatment time of 11 hours.

[0057] As shown in Figure 9, when no seasoning process was performed, the number of particles was only about 14,000 even after 40 hours of dummy processing.

[0058] The results from Figures 6 to 9 above demonstrate that particle generation can be reduced in a short time by performing both seasoning and dummy treatments. This is thought to be due to the rapid stabilization of the surface inside the treatment container 10.

[0059] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0060] In the embodiments described above, the case in which the film formed on the product substrate is a silicon nitride (SiN) film was explained, but this disclosure is not limited thereto. For example, the film formed on the product substrate may be a SiCN film, a SiOCN film, a SiON film, or a SiON film. ２ A film, or even a silicon film, may be used.

[0061] This international application claims priority based on Japanese Patent Application No. 2024-193818, filed on 5 November 2024, and the entire contents of said application are incorporated herein by reference.

[0062] 1 Plasma processing apparatus 10 Processing container W Substrate

Claims

1. A method for stabilizing a plasma processing apparatus, comprising: supplying plasma generated from a hydrogen-containing seasoning gas into a processing vessel to perform a seasoning process; and performing a dummy process, wherein the dummy process includes supplying plasma generated from a film-forming gas into the processing vessel to perform a film-forming process to form a film on the surface inside the processing vessel; and supplying plasma generated from a halogen-containing cleaning gas into the processing vessel to perform a cleaning process to clean the inside of the processing vessel.

2. The method for stabilizing a plasma processing apparatus according to claim 1, wherein the dummy processing is performed by repeatedly performing the film formation process and the cleaning process.

3. The method for stabilizing a plasma processing apparatus according to claim 2, wherein the film formation process comprises: performing a first film formation process to form a first film in the processing container under first conditions; and performing a second film formation process to form a second film in the processing container under second conditions different from the first conditions.

4. A method for stabilizing a plasma processing apparatus according to claim 1, comprising performing the dummy treatment after performing the seasoning treatment.

5. A method for stabilizing a plasma processing apparatus according to claim 1, comprising performing the dummy treatment before performing the seasoning treatment.

6. A method for stabilizing a plasma processing apparatus according to claim 1, comprising repeating the dummy processing and the seasoning processing.

7. A method for stabilizing a plasma processing apparatus according to claim 6, wherein, of performing the dummy processing and the seasoning processing, the dummy processing is performed first.

8. A method for stabilizing a plasma processing apparatus according to claim 6, wherein, of performing the dummy processing and the seasoning processing, the dummy processing is performed last.

9. The method for stabilizing a plasma processing apparatus according to any one of claims 1 to 8, wherein the hydrogen-containing gas is hydrogen gas or ammonia gas.

10. The method for stabilizing a plasma processing apparatus according to any one of claims 1 to 8, wherein the seasoning gas further comprises an inert gas.

11. The method for stabilizing a plasma processing apparatus according to any one of claims 1 to 8, wherein the film deposition process is performed under the same conditions as the plasma treatment on the product substrate.

12. The method for stabilizing a plasma processing apparatus according to any one of claims 1 to 8, wherein the film-forming gas comprises a silicon-containing gas and a nitrogen-containing gas.

13. The method for stabilizing a plasma processing apparatus according to any one of claims 1 to 8, wherein the halogen-containing gas is nitrogen trifluoride gas.

14. The plasma processing apparatus is configured to introduce microwaves into the processing vessel through a dielectric window fitted into the top plate of the processing vessel, and the method for stabilizing the plasma processing apparatus is performed after the top plate has been replaced with a new one and before plasma processing is performed on the product substrate in the processing vessel, the method for stabilizing a plasma processing apparatus according to any one of claims 1 to 8.

15. A plasma processing apparatus comprising: a processing vessel; a gas supply unit for supplying gas into the processing vessel; a plasma source for introducing microwaves into the processing vessel; and a control unit, wherein the control unit is configured to control the gas supply unit and the plasma source to perform a seasoning process by supplying plasma generated from a seasoning gas containing hydrogen gas into the processing vessel, and to perform a dummy process, wherein the dummy process includes: supplying plasma generated from a film-forming gas into the processing vessel to perform a film-forming process to form a film on the surface inside the processing vessel; and supplying plasma generated from a cleaning gas containing halogen gas into the processing vessel to perform a cleaning process to clean the inside of the processing vessel.

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