Oxide semiconductor transparent solar cell, manufacturing method thereof, and underwater photovoltaic system using oxide semiconductor transparent solar cell

Abstract

The present invention relates to an oxide semiconductor transparent solar cell, a manufacturing method thereof, and an underwater photovoltaic system using the oxide semiconductor transparent solar cell, and more specifically, to an oxide semiconductor transparent solar cell, a manufacturing method thereof, and an underwater photovoltaic system using the oxide semiconductor transparent solar cell, wherein the transparent solar cell includes an oxide semiconductor, specifically a Cu2O / Ga2O3 heterojunction, and can form a transparent solar cell module using Cu2O as a light-absorbing layer, the transparent solar cell module is capable of underwater solar power generation in an underwater environment, and power conversion efficiency during underwater solar power generation can be enhanced by using water disposed above the transparent solar cell module as a condensing lens.

Description

Oxide semiconductor transparent solar cell, method for manufacturing the same, and underwater solar power system using oxide semiconductor transparent solar cell

[0001] The present invention relates to an oxide semiconductor transparent solar cell, a method for manufacturing the same, and an underwater solar power system using an oxide semiconductor transparent solar cell. More specifically, the transparent solar cell comprises an oxide semiconductor, particularly a Cu2O / Ga2O3 heterojunction, and can form a transparent solar module using Cu2O as a light-absorbing layer. The transparent solar module is capable of generating underwater solar power in an underwater environment, and can improve power conversion efficiency by using water placed above the transparent solar module as a concentrating lens during underwater solar power generation.

[0002]

[0003] Solar photovoltaic power generation is being researched in many fields, including terrestrial and floating energy plants and space development, as a next-generation energy source for carbon neutrality. However, research on underwater solar photovoltaic power generation remains insufficient.

[0004] Installing solar modules underwater offers the advantages of not being constrained by installation area compared to land-based installations, and allows the modules to be automatically cooled by the water. Therefore, if underwater solar power generation is realized, it is expected to be utilized in fields such as underwater power production, remote sensing for marine research, automated operation, and navigation.

[0005] However, most conventional solar modules are silicon-based opaque devices, and when used underwater, there is a risk that they may cause problems for the existing ecosystem by blocking sunlight incident on the seabed. Although underwater solar power generation using transparent devices has been studied in the past, a problem has arisen in that the range of light that can be used by solar modules placed underwater is limited due to the characteristics of water, which absorbs some ultraviolet rays and light greater than 600 nm, resulting in reduced power conversion efficiency.

[0006] In other words, there is a need for photovoltaic power generation devices that possess high power conversion efficiency and transparency underwater.

[0007]

[0008] The present invention aims to provide an oxide semiconductor transparent solar cell, a method for manufacturing the same, and an underwater solar power system using the oxide semiconductor transparent solar cell, wherein the transparent solar cell comprises an oxide semiconductor, particularly a Cu2O / Ga2O3 heterojunction, and can form a transparent solar module using Cu2O as a light-absorbing layer, wherein the transparent solar module is capable of generating underwater solar power in an underwater environment, and can improve power conversion efficiency by using water placed above the transparent solar module as a concentrating lens during underwater solar power generation.

[0009]

[0010] In order to solve the above problems, one embodiment of the present invention provides a transparent photovoltaic module capable of operating underwater, formed of an oxide semiconductor including a p / n heterojunction, comprising: a glass substrate layer including a conductive material; a p-type oxide layer disposed on the glass substrate layer; an n-type oxide layer disposed on the p-type oxide layer; and an upper electrode layer disposed on the n-type oxide layer; wherein the transparent photovoltaic module has a transmittance of 20% or more and can operate in the atmosphere to convert light energy into electrical energy.

[0011] In order to solve the above problems, one embodiment of the present invention provides a transparent photovoltaic module capable of operating underwater, formed of an oxide semiconductor including a p / n heterojunction, comprising: a glass substrate layer including a conductive material; an n-type oxide layer disposed on the glass substrate layer; a p-type oxide layer disposed on the n-type oxide layer; and an upper electrode layer disposed on the p-type oxide layer; wherein the transparent photovoltaic module has a transmittance of 20% or more and can operate in the atmosphere to convert light energy into electrical energy.

[0012] In some embodiments of the present invention, the transparent photovoltaic module comprises a plurality of at least one of the p-type oxide layer and the n-type oxide layer, wherein the p-type oxide layer comprises at least one of NiO, CuO, Cu2O, to Co3O4, and the n-type oxide layer comprises at least one of Ga2O3, ZnO, In2O3, SnO2, to BiVO4.

[0013] In some embodiments of the present invention, when the transparent photovoltaic module comprises a plurality of n-type oxide layers, the n-type oxide layers other than one of the plurality of n-type oxide layers can perform the role of a wide bandgap layer.

[0014]

[0015] To solve the above problems, one embodiment of the present invention provides a transparent photovoltaic module capable of operating underwater and comprising a Cu2O / Ga2O3 heterojunction, the transparent photovoltaic module comprising: a glass substrate layer; a p-type oxide layer comprising Cu2O disposed on the glass substrate layer; a wide bandgap layer comprising Ga2O3 disposed on the p-type oxide layer; an n-type oxide layer disposed on the wide bandgap layer; and an upper electrode layer disposed on the n-type oxide layer; wherein the transparent photovoltaic module can operate underwater and convert light energy into electrical energy.

[0016] In some embodiments of the present invention, the transparent photovoltaic module may have a Cu2O / Ga2O3 heterojunction structure formed by the p-type oxide layer and the wide bandgap layer.

[0017] In some embodiments of the present invention, the transparent photovoltaic module may have a higher power conversion efficiency (PCE) in an underwater environment than in an environment in contact with air.

[0018] In some embodiments of the present invention, when the transparent photovoltaic module operates underwater, the straightness of light is improved by the refractive index of water, so the fill factor (FF) may be 10% or more.

[0019] In some embodiments of the present invention, the transparent photovoltaic module may have a power conversion efficiency (PCE) of 1% or more when operating underwater.

[0020] In some embodiments of the present invention, the n-type oxide layer and the upper electrode layer each have a thickness of 1 to 1000 nm and may be formed as a single layer or a multilayer structure.

[0021] In some embodiments of the present invention, the p-type oxide layer may be formed by magnetron sputtering for 1 to 60 minutes under sputtering power of 1 to 500 W, argon (Ar) gas flow rate of 1 to 100 sccm, oxygen (O2) gas flow rate of 0.1 to 50 sccm, operating pressure of 1 to 50 mTorr, and temperature of 100 to 800°C.

[0022] In some embodiments of the present invention, the wide bandgap layer and the n-type oxide layer can each be formed by magnetron sputtering for 1 to 60 minutes under conditions of RF power of 1 to 100 W, argon (Ar) gas flow rate of 0.1 to 10 sccm, and operating pressure of 1 to 10 mTorr.

[0023] In some embodiments of the present invention, the transparent solar module can operate underwater to convert light energy into electrical energy for underwater solar power generation, and when underwater solar power generation is performed, water positioned adjacent to the upper side of the transparent solar module can function as a concentrating lens.

[0024] In some embodiments of the present invention, when the transparent solar module operates underwater, an electric double layer is formed at the interface between the upper surface of the transparent solar module and water disposed adjacent to the upper surface of the transparent solar module, and the electric double layer can perform the role of promoting the generation of an electric field by the light and the movement of photocharges generated in the transparent solar module when light is irradiated onto the transparent solar module.

[0025] In some embodiments of the present invention, the transparent photovoltaic module may operate in an air ambient and an underwater environment, and the underwater environment may include one or more of seawater, freshwater, tap water, and distilled water.

[0026] In some embodiments of the present invention, the transparent solar module may be operable when irradiated with natural sunlight and LED artificial light.

[0027]

[0028] In order to solve the above problems, one embodiment of the present invention provides a method for manufacturing a transparent photovoltaic module capable of operating underwater, formed of an oxide semiconductor including a p / n heterojunction, comprising: a substrate preparation step of placing a glass substrate layer containing a conductive material; a p-type oxide layer formation step of placing a p-type oxide layer on the glass substrate layer; an n-type oxide layer formation step of placing an n-type oxide layer on the p-type oxide layer; and an upper electrode formation step of placing an upper electrode layer on the n-type oxide layer; wherein the transparent photovoltaic module has a transmittance of 20% or more and can operate in the atmosphere to convert light energy into electrical energy.

[0029]

[0030] To solve the above problems, one embodiment of the present invention provides a method for manufacturing a transparent photovoltaic module capable of operating underwater and comprising a Cu2O / Ga2O3 heterojunction, comprising: a substrate preparation step of placing a glass substrate layer containing a conductive material; a p-type oxide layer formation step of placing a p-type oxide layer containing Cu2O on the glass substrate layer; a wide bandgap layer formation step of placing a wide bandgap layer containing Ga2O3 on the p-type oxide layer; an n-type oxide layer formation step of placing an n-type oxide layer on the wide bandgap layer; and an upper electrode formation step of placing an upper electrode layer on the n-type oxide layer; wherein the transparent photovoltaic module can operate underwater and convert light energy into electrical energy.

[0031] In some embodiments of the present invention, the n-type oxide layer and the upper electrode layer each have a thickness of 1 to 1000 nm and may be formed as a single layer or a multilayer structure.

[0032] In some embodiments of the present invention, the p-type oxide layer may be formed by magnetron sputtering for 1 to 60 minutes under sputtering power of 1 to 500 W, argon (Ar) gas flow rate of 1 to 100 sccm, oxygen (O2) gas flow rate of 0.1 to 50 sccm, operating pressure of 1 to 50 mTorr, and temperature of 100 to 800°C.

[0033] In some embodiments of the present invention, the wide bandgap layer and the n-type oxide layer can each be formed by magnetron sputtering for 1 to 60 minutes under conditions of RF power of 1 to 100 W, argon (Ar) gas flow rate of 0.1 to 10 sccm, and operating pressure of 1 to 10 mTorr.

[0034]

[0035] According to one embodiment of the present invention, when a transparent solar module is placed underwater, the water placed above the transparent solar module functions as a concentrating lens for the transparent solar module, thereby increasing the critical angle of light incident on the transparent solar module placed in an underwater environment and capturing light incident over a wide angle range and transmitting it to the transparent solar module, thereby producing an effect that improves the power conversion efficiency of underwater solar power generation.

[0036] According to one embodiment of the present invention, since the transparent solar module has light transmittance, when used for underwater solar power generation, it does not block sunlight incident on the water, thereby minimizing the impact on the underwater ecosystem and thereby enhancing environmental friendliness.

[0037] According to one embodiment of the present invention, a transparent solar module uses Cu2O as a light-absorbing layer to absorb light in the 400 to 600 nm range incident into water, and when the transparent solar module is installed underwater, it has a deeper light penetration depth than when it is installed in the atmosphere, thereby enabling the effect of improving the efficiency of underwater solar power generation.

[0038] According to one embodiment of the present invention, the p-type oxide layer, the wide bandgap layer, and the n-type oxide layer are sequentially deposited on a glass substrate layer using a magnetron sputtering device, thereby processing the p-type oxide layer formation step, the wide bandgap layer formation step, and the n-type oxide layer formation step with a single device, thereby providing the effect of improving process convenience.

[0039] According to one embodiment of the present invention, the water layer electrically interacts with the transparent photovoltaic module to increase the space charge region inside the transparent photovoltaic module and lower the energy barrier at the interface, thereby allowing the photovoltaic charge generated in the transparent photovoltaic module to be used as output power without recombination, thus enabling the efficiency of underwater photovoltaic power generation to be improved.

[0040]

[0041] FIG. 1 schematically illustrates the layered structure of a transparent photovoltaic module according to one embodiment of the present invention.

[0042] FIG. 2 schematically illustrates the manufacturing steps of a transparent solar module according to one embodiment of the present invention.

[0043] FIG. 3 illustrates details regarding a transparent photovoltaic module according to one embodiment of the present invention, a cross-sectional TEM image, an EDS image, absorbance, absorption coefficient, transmittance, and color coordinates of the transparent photovoltaic module.

[0044] FIG. 4 illustrates a transparent solar module according to one embodiment of the present invention and details regarding the electrical characteristics of the transparent solar module.

[0045] FIG. 5 illustrates the incident photon-to-current conversion efficiency (IPCE) and power conversion efficiency (PCE) of a transparent solar module according to one embodiment of the present invention.

[0046] FIG. 6 illustrates the electrical characteristics measured in each of the cases where a transparent solar module according to one embodiment of the present invention is installed in the atmosphere, in an underwater environment (distilled water), in an underwater environment (tap water), and in an underwater environment (saltwater).

[0047] FIG. 7 illustrates the electrical characteristics according to the angle of incidence of incident light for a transparent photovoltaic module according to one embodiment of the present invention.

[0048] FIG. 8 schematically illustrates a transparent solar module according to one embodiment of the present invention when installed in the atmosphere and when installed in an underwater environment, and a band diagram of the transparent solar module.

[0049]

[0050] Hereinafter, various embodiments and / or aspects are disclosed with reference to the drawings. For illustrative purposes, numerous specific details are disclosed in the following description to aid in a general understanding of one or more aspects. However, it will also be recognized by those skilled in the art that these aspects may be practiced without such specific details. The following description and the accompanying drawings describe specific exemplary aspects of one or more aspects in detail. However, these aspects are exemplary, and some of the various methods in the principles of the various aspects may be used, and the description is intended to include all such aspects and their equivalents.

[0051] In addition, various aspects and features will be presented by a system that may include multiple devices, components and / or modules, etc. It should also be understood and recognized that various systems may include additional devices, components and / or modules, etc., and / or may not include all of the devices, components, modules, etc. discussed in relation to the drawings.

[0052] As used herein, terms such as "examples," "examples," "aspects," "examples," etc., may not be interpreted as implying that any aspect or design described is better or more advantageous than other aspects or designs.

[0053] Additionally, the terms “comprising” and / or “comprising” should be understood to mean that the relevant feature and / or component is present, but not to exclude the presence or addition of one or more other features, components and / or groups thereof.

[0054] Additionally, terms including ordinal numbers, such as first, second, etc., may be used to describe various components, but said components are not limited by said terms. Such terms are used solely for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component. The term "and / or" includes a combination of a plurality of related described items or any of a plurality of related described items.

[0055] Furthermore, in the embodiments of the present invention, all terms used herein, including technical or scientific terms, unless otherwise defined, have the same meaning as generally understood by those skilled in the art to which the present invention pertains. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in the embodiments of the present invention.

[0056]

[0057] Underwater solar power generation offers advantages such as greater flexibility in determining the installation area of ​​solar modules compared to land-based systems, as well as the potential for automatic cooling by the water. Therefore, if underwater solar power generation is realized, it is expected to be widely utilized in the fields of underwater power production and marine research; however, research on this topic is currently lacking.

[0058] Conventional commercially available solar modules are silicon-based opaque devices, posing a risk that their use in underwater solar power generation may affect the underwater ecosystem by blocking incident light on the seabed. Consequently, while the use of transparent solar devices for underwater solar power generation has been studied, these devices suffer from issues such as low power conversion efficiency and insufficient underwater stability. Furthermore, since water absorbs light in the ultraviolet and infrared regions, the usable light spectrum for solar modules deployed underwater is limited.

[0059] To solve this problem, the present invention discloses an oxide semiconductor transparent solar cell, a method for manufacturing the same, and an underwater solar power system using an oxide semiconductor transparent solar cell.

[0060] More specifically, the transparent solar cell comprises an oxide semiconductor, particularly a Cu2O / Ga2O3 heterojunction, and can form a transparent solar module (1) using Cu2O as a light-absorbing layer. The transparent solar module (1) can convert light in the 400 to 600 nm range incident on water into electrical energy by using Cu2O, which has a bandgap of 2.1 eV, as a light-absorbing layer, and Ga2O3, which has a wide bandgap, can prevent the recombination of photocharges generated in Cu2O by forming a heterojunction with Cu2O. In addition, the transparent solar module (1) can use water placed above the transparent solar module (1) as a concentrating lens during underwater solar power generation.

[0061]

[0062] That is, the present invention can produce electrical energy by using Cu2O as a light-absorbing layer, thereby absorbing light in the 400 to 600 nm range incident into the water rather than light in the infrared and some ultraviolet ranges absorbed by water, and thus can have the effect of improving suitability as an underwater photovoltaic power generation device.

[0063] In addition, when a transparent solar module (1) according to one embodiment of the present invention is placed underwater, the water placed above the transparent solar module (1) functions as a concentrating lens for the transparent solar module (1), thereby enabling an effect of improving the power conversion efficiency of underwater solar power generation.

[0064] A transparent solar module (1) according to one embodiment of the present invention has light transmittance, so when used for underwater solar power generation, it does not block sunlight incident into the water, thereby minimizing the impact on the underwater ecosystem and thereby improving environmental friendliness.

[0065]

[0066] Hereinafter, a transparent photovoltaic module (1) including a Cu2O / Ga2O3 heterojunction according to one embodiment of the present invention and a method for manufacturing the same will be described in detail.

[0067]

[0068] FIG. 1 schematically illustrates the layered structure of a transparent solar module (1) according to one embodiment of the present invention.

[0069]

[0070] A transparent solar module (1) capable of operating underwater, formed from an oxide semiconductor including a p / n heterojunction according to one embodiment of the present invention, comprises: a glass substrate layer (100) including a conductive material; a p-type oxide layer (200) disposed on the glass substrate layer (100); an n-type oxide layer (400) disposed on the p-type oxide layer (200); and an upper electrode layer (500) disposed on the n-type oxide layer (400). The transparent solar module (1) has a transmittance of 20% or more and can operate in the atmosphere to convert light energy into electrical energy.

[0071] According to one embodiment of the present invention, the transparent photovoltaic module (1) comprises at least one of the p-type oxide layer (200) and the n-type oxide layer (400), and the p-type oxide layer (200) may comprise at least one of NiO, CuO, Cu2O, to Co3O4, and the n-type oxide layer (400) may comprise at least one of Ga2O3, ZnO, In2O3, SnO2, to BiVO4. When the transparent photovoltaic module (1) comprises at least one of the n-type oxide layer (400), the remaining n-type oxide layer (400), excluding any one of the n-type oxide layer (400), may perform the role of a plurality of wide bandgap layers (300).

[0072] In detail, a transparent solar module (1) capable of operating underwater and comprising a Cu2O / Ga2O3 heterojunction according to one embodiment of the present invention may be provided, comprising: a glass substrate layer (100) comprising a conductive material; a p-type oxide layer (200) comprising Cu2O disposed on the glass substrate layer (100); a wide bandgap layer (300) comprising Ga2O3 disposed on the p-type oxide layer (200); an n-type oxide layer (400) disposed on the wide bandgap layer (300); and an upper electrode layer (500) disposed on the n-type oxide layer (400). The transparent solar module (1) may be provided, capable of operating underwater and converting light energy into electrical energy.

[0073] According to one embodiment of the present invention, the transparent photovoltaic module (1) may have a Cu2O / Ga2O3 heterojunction structure formed by the p-type oxide layer (200) and the wide bandgap layer (300).

[0074] In addition, according to one embodiment of the present invention, the n-type oxide layer (400) and the upper electrode layer (500) may each include ZnO.

[0075]

[0076] As illustrated in FIG. 1, the transparent photovoltaic module (1) may include a glass substrate layer (100), a p-type oxide layer (200), a wide bandgap layer (300), an n-type oxide layer (400), and an upper electrode layer (500).

[0077] Specifically, the glass substrate layer (100) may be an electrode containing a transparent conductive oxide (TCO). Preferably, the glass substrate layer (100) includes a fluorine-doped tin oxide (FTO) on its upper side.

[0078] The p-type oxide layer (200) may be disposed on the glass substrate layer (100), and the p-type oxide layer (200) may include Cu2O. The Cu2O may be a semiconductor material having a band gap of about 2.1 eV, a cubic structure, and p-type conductivity. When sunlight is irradiated onto the Cu2O, the Cu2O may be able to absorb short wavelengths of about 600 nm or more due to its band gap of about 2.1 eV. That is, since the Cu2O possesses photocatalytic properties that generate photoelectrons by absorbing light in the visible light range, the p-type oxide layer (200) according to one embodiment of the present invention can serve as a light absorption layer of the transparent solar module (1). A more detailed description of the p-type oxide layer (200) will be provided in the drawings described later.

[0079] A wide bandgap layer (300) may be disposed on top of the p-type oxide layer (200), and the wide bandgap layer (300) may include Ga2O3. The transparent photovoltaic module (1) may form a Cu2O / Ga2O3 heterojunction structure by disposing of the wide bandgap layer (300) on top of the p-type oxide layer (200). The Ga2O3 included in the wide bandgap layer (300) may be a transparent conductive oxide having a wide bandgap of approximately 4.9 eV, and by including a low conduction band offset, it may perform the role of moving photoelectrons generated in the p-type oxide layer (200) from the p-type oxide layer (200) to the n-type oxide layer (400) and the upper electrode layer (500). A more detailed description of the wide bandgap layer (300) will be provided in the drawings described later.

[0080] The n-type oxide layer (400) may be disposed on top of the wide bandgap layer (300). According to one embodiment of the present invention, the n-type oxide layer (400) may include ZnO. The ZnO is a semiconductor material having n-type conductivity, and is a material widely used as a photovoltaic device because it is non-toxic, has high stability and transparency, has a low cost, and is easy to synthesize. In the transparent photovoltaic module (1), the n-type oxide layer (400) can form a pn junction with the p-type oxide layer (200) and receive photoelectrons generated from the p-type oxide layer (200), and transfer them to the upper electrode layer (500).

[0081] A more detailed description of the above n-type oxide layer (400) will be provided in the drawings described later.

[0082] The upper electrode layer (500) may be disposed on the n-type oxide layer (400). Preferably, the upper electrode layer (500) may include ZnO and may further include Ag nanowires. A more detailed description of the upper electrode layer (500) will be provided in the drawings described later.

[0083] As described above, when the transparent photovoltaic module (1) includes a plurality of n-type oxide layers (400), the n-type oxide layers (400) excluding one of the plurality of n-type oxide layers (400) can perform the role of a wide bandgap layer (300). Specifically, one of the plurality of n-type oxide layers (400) may be placed adjacent to the p-type oxide layer (200), and another of the plurality of n-type oxide layers (400) may be placed adjacent to the upper electrode layer (500). In this case, all of the n-type oxide layers (400) excluding the other one placed adjacent to the upper electrode layer (500) among the plurality of n-type oxide layers (400) can perform the role of a wide bandgap layer (300).

[0084]

[0085] Meanwhile, as described above, since the above Ga2O3 and ZnO can have transparency, the transparent photovoltaic module (1) can have a transmittance of 20% or more for the irradiated light.

[0086] That is, the glass substrate layer (100), wide bandgap layer (300), n-type semiconductor layer, and upper electrode layer (500) according to one embodiment of the present invention can have the effect of improving the transmittance of the transparent solar module (1) by including a transparent material.

[0087] In addition, the transparent solar module (1) according to one embodiment of the present invention includes a Cu2O / Ga2O3 heterojunction structure, thereby preventing the recombination of photoelectrons generated in the p-type oxide layer (200) and thus having the effect of improving photoelectric conversion efficiency.

[0088]

[0089] Meanwhile, although not shown in the drawings, according to one embodiment of the present invention, a transparent solar module (1) capable of operating underwater, formed of an oxide semiconductor including a p / n heterojunction, comprises: a glass substrate layer (100) including a conductive material; an n-type oxide layer (400) disposed on the glass substrate layer (100); a p-type oxide layer (200) disposed on the n-type oxide layer (400); and an upper electrode layer (500) disposed on the p-type oxide layer (200); wherein the transparent solar module (1) has a transmittance of 20% or more and can operate in the atmosphere to convert light energy into electrical energy.

[0090] Specifically, the transparent photovoltaic module (1) may have the n-type oxide layer (400) disposed first on the glass substrate layer (100) instead of the p-type oxide layer (200). When the n-type oxide layer (400) is disposed first on the glass substrate layer (100) instead of the p-type oxide layer (200), the p-type oxide layer (200) may be disposed on the n-type oxide layer (400), and the upper electrode layer (500) may be disposed on the p-type oxide layer (200).

[0091]

[0092] FIG. 2 schematically illustrates the manufacturing steps of a transparent solar module (1) according to one embodiment of the present invention.

[0093]

[0094] A method for manufacturing a transparent solar module (1) that can operate underwater, formed from an oxide semiconductor including a p / n heterojunction according to one embodiment of the present invention, comprising: a substrate preparation step (S10) of placing a glass substrate layer (100) including a conductive material; a p-type oxide layer formation step (S20) of placing a p-type oxide layer (200) on the glass substrate layer (100); an n-type oxide layer formation step (S40) of placing an n-type oxide layer (400) on the p-type oxide layer (200); and an upper electrode formation step (S50) of placing an upper electrode layer (500) on the n-type oxide layer (400); wherein the transparent solar module (1) has a transmittance of 20% or more and can operate in the atmosphere to convert light energy into electrical energy.

[0095] More specifically, a method for manufacturing a transparent photovoltaic module (1) capable of operating underwater and including a Cu2O / Ga2O3 heterojunction according to one embodiment of the present invention comprises: a substrate preparation step (S10) of placing a glass substrate layer (100) containing a conductive material; a p-type oxide layer formation step (S20) of placing a p-type oxide layer (200) containing Cu2O on the glass substrate layer (100); a wide band gap layer formation step (S30) of placing a wide band gap layer (300) containing Ga2O3 on the p-type oxide layer (200); and an n-type oxide layer formation step (S40) of placing an n-type oxide layer (400) on the wide band gap layer (300). A method for manufacturing a transparent solar module (1) can be provided, comprising: a step of forming an upper electrode (S50) of placing an upper electrode layer (500) on the n-type oxide layer (400); wherein the transparent solar module (1) can operate underwater to convert light energy into electrical energy.

[0096] Additionally, according to one embodiment of the present invention, the p-type oxide layer (200) can be formed by magnetron sputtering for 1 to 60 minutes under conditions of sputtering power of 1 to 500 W, argon (Ar) gas flow rate of 1 to 100 sccm, oxygen (O2) gas flow rate of 0.1 to 50 sccm, operating pressure of 1 to 50 mTorr, and temperature of 100 to 800°C, and the wide bandgap layer (300) and the n-type oxide layer (400) can each be formed by magnetron sputtering for 1 to 60 minutes under conditions of RF power of 1 to 100 W, argon (Ar) gas flow rate of 0.1 to 10 sccm, and operating pressure of 1 to 10 mTorr.

[0097] According to one embodiment of the present invention, the n-type oxide layer (400) and the upper electrode layer (500) may each have a thickness of 1 to 1000 nm and may be formed as a single layer or a multilayer structure. In particular, the upper electrode layer (500) may include a nanowire layer disposed on the n-type oxide layer (400); and an oxide thin film layer disposed on the nanowire layer.

[0098] In addition, according to one embodiment of the present invention, a pattern mask having one or more electrode patterns formed thereon is placed on the n-type oxide layer (400), spin-coated on the pattern mask for 1 to 60 minutes at a speed condition of 100 to 10000 rpm, and heat-treated for 1 to 1000 seconds at a temperature condition of 0 to 500°C to form the nanowire layer, and the oxide thin film layer is formed on the nanowire layer through RF sputtering for 1 to 60 minutes under conditions of RF power of 1 to 100 W, an argon (Ar) gas flow rate of 0.1 to 10 sccm, and an operating pressure of 1 to 10 mTorr, and the upper electrode layer (500) including one or more pattern electrodes corresponding to the shape of the electrode pattern can be formed on the n-type oxide layer (400) by removing the pattern mask.

[0099]

[0100] As illustrated in FIG. 2, the method for manufacturing the transparent photovoltaic module (1) may include a substrate preparation step (S10), a p-type oxide layer formation step (S20), a wide bandgap layer formation step (S30), an n-type oxide layer formation step (S40), and an upper electrode formation step (S50).

[0101]

[0102] Specifically, in the substrate preparation step (S10), the glass substrate layer (100) may be placed. As described above, the glass substrate layer (100) may be FTO glass containing FTO. The glass substrate layer (100) may be ultrasonically cleaned for 10 minutes in acetone, methanol, and distilled water, respectively, dried with nitrogen gas, and placed as a substrate in a device for forming the p-type oxide layer (200).

[0103] In the p-type oxide layer formation step (S20) above, the p-type oxide layer (200) containing Cu2O can be formed on the glass substrate layer (100). As described above, the p-type oxide layer (200) containing Cu2O can serve as a light absorption layer of the transparent photovoltaic module (1). The p-type oxide layer (200) can be formed by depositing it on the glass substrate layer (100) using a magnetron sputtering device.

[0104] A copper target may be disposed on one side of the inner side of the magnetron sputtering device, and the glass substrate layer (100) may be disposed on the other side. In the p-type oxide layer formation step (S20), the magnetron sputtering device operates under conditions of sputtering power of 1 to 500 W, argon (Ar) gas flow rate of 1 to 100 sccm, oxygen (O2) gas flow rate of 0.1 to 50 sccm, operating pressure of 1 to 50 mTorr, and temperature of 100 to 800°C, and the p-type oxide layer (200) may be formed by the magnetron sputtering device at a deposition rate of 1 to 100 nm / min for 1 to 60 minutes to a thickness of 300 to 800 nm.

[0105] Preferably, the magnetron sputtering device is operated under conditions of a sputtering power of 200 to 400 W, an argon gas flow rate of 20 to 70 sccm, an oxygen gas flow rate of 1 to 20 sccm, an operating pressure of 3 to 20 mTorr, and a temperature of 300 to 600°C, and the p-type oxide layer (200) can be formed to a thickness of 400 to 750 nm for 5 to 50 minutes at a deposition rate of 10 to 60 nm / min.

[0106] More specifically, the magnetron sputtering device is operated under conditions of 300W sputtering power, 30sccm argon gas flow rate, 7sccm oxygen gas flow rate, 7mTorr operating pressure, and 450℃ temperature, and the p-type oxide layer (200) can be formed to a thickness of 650nm for 10 to 30 minutes at a deposition rate of 33nm / min.

[0107] Meanwhile, in the wide bandgap layer formation step (S30), the wide bandgap layer (300) containing Ga2O3 can be formed on the p-type oxide layer (200), and in the n-type oxide layer formation step (S40), the n-type oxide layer (400) can be formed on the wide bandgap layer (300). As described above, the n-type oxide layer (400) may contain ZnO. Each of the wide bandgap layer (300) and the n-type oxide layer (400) may be deposited using a magnetron sputtering device corresponding to the p-type oxide layer (200), and the deposition conditions of the wide bandgap layer (300) and the n-type oxide layer (400) may correspond to each other.

[0108] Specifically, the wide bandgap layer formation step (S30) and the n-type oxide layer formation step (S40) may be performed sequentially in the magnetron sputtering device. A Ga2O3 target and a ZnO target are disposed on one side of the inner side of the magnetron sputtering device, and the Ga2O3 target is used in the wide bandgap layer formation step (S30), and the ZnO target is used in the n-type oxide layer formation step (S40). In the wide bandgap layer formation step (S30) and the n-type oxide layer formation step (S40), the magnetron sputtering device may be operated at an RF power of 1 to 100 W, an argon (Ar) gas flow rate of 0.1 to 10 sccm, and an operating pressure of 1 to 10 mTorr.

[0109] Preferably, the magnetron sputtering device can operate at an RF power of 20 to 70 W, an argon gas flow rate of 1 to 7 sccm, and an operating pressure of 2 to 7 mTorr.

[0110] More specifically, the magnetron sputtering device can operate at an RF power of 50W, an argon gas flow rate of 5sccm, and an operating pressure of 5mTorr.

[0111] Under the above conditions, the wide bandgap layer (300) can be deposited on the p-type oxide layer (200) at a deposition rate of 0.1 to 3 nm / min for 1 to 60 minutes with a thickness of 1 to 50 nm. Preferably, the wide bandgap layer (300) can be deposited at a deposition rate of 0.5 to 2 nm / min for 5 to 50 minutes with a thickness of 5 to 30 nm. More specifically, the wide bandgap layer (300) can be deposited at a deposition rate of 1 nm / min for 10 to 30 minutes with a thickness of 14 nm.

[0112] When the wide bandgap layer formation step (S30) is completed, the magnetron sputtering device may perform the n-type oxide layer formation step (S40) to form the n-type oxide layer (400) on the wide bandgap layer (300). The n-type oxide layer (400) may be deposited for 1 to 120 minutes at a deposition rate of 0.1 to 10 nm / min under the aforementioned conditions to finally have a thickness of 10 to 1000 nm. Preferably, the n-type oxide layer (400) may be deposited for 10 to 100 minutes at a deposition rate of 0.5 to 5 nm / min to have a thickness of 30 to 200 nm. More specifically, the n-type oxide layer (400) may be deposited for 30 to 80 minutes at a deposition rate of 1.5 nm / min to have a thickness of 85 nm.

[0113] In the upper electrode formation step (S50) above, the upper electrode layer (500) can be formed on the n-type oxide layer (400). As described above, the n-type oxide layer (400) and the upper electrode layer (500) can each be formed as a single layer or a multilayer structure. Additionally, the upper electrode layer (500) may include ZnO and Ag nanowires.

[0114] Specifically, the upper electrode layer (500) may include a nanowire layer disposed on an n-type oxide layer (400) and an oxide thin film layer disposed on the nanowire layer, wherein the nanowire layer includes the Ag nanowire and the oxide thin film layer includes the ZnO.

[0115] In the upper electrode formation step (S50) above, the nanowire layer may be formed, and an oxide thin film layer may be formed on the nanowire layer. According to one embodiment of the present invention, in the upper electrode formation step (S50), a pattern mask having one or more electrode patterns formed thereon may be placed on the n-type oxide layer (400). Hereinafter, the n-type oxide layer (400) on which the pattern mask is placed will be referred to as an intermediate substrate. The intermediate substrate may be placed in a spin coating device, and the nanowire layer may be spin-coated by supplying a nanowire solution containing Ag nanowires from the upper side of the intermediate substrate while rotating the intermediate substrate at a speed of 100 to 10,000 rpm for 1 to 60 minutes. The spin-coated nanowire layer may include a network composed of Ag nanowires on the inside by heat-treating it for 1 to 1,000 seconds at a temperature condition of 0 to 500°C.

[0116] Preferably, the nanowire layer can be formed by spin-coating the intermediate substrate while rotating it at a speed of 1,000 to 5,000 rpm for 10 to 50 minutes, and heat-treating it at a temperature of 10 to 300°C for 30 to 500 seconds.

[0117] More specifically, the nanowire layer can be formed by spin-coating the intermediate substrate while rotating it at a speed of 2000 rpm for 30 minutes, and heat-treating it at a temperature of 100°C for 60 to 360 seconds.

[0118] An oxide thin film layer may be formed on the heat-treated nanowire layer, and the oxide thin film layer may be formed under conditions corresponding to the n-type oxide layer formation step (S40). The ZnO target may be disposed on one side of the inner side of the magnetron sputtering device, and the intermediate substrate on which the nanowire layer is formed may be disposed on the other side of the inner side of the magnetron sputtering device, and the magnetron sputtering device may be operated at an RF power of 1 to 100 W, an argon gas flow rate of 0.1 to 10 sccm, and an operating pressure of 1 to 10 mTorr. Under the aforementioned conditions, the oxide thin film layer may be deposited on the nanowire layer for 1 to 60 minutes with a thickness of 1 to 1000 nm.

[0119] Preferably, the magnetron sputtering device operates at an RF power of 20 to 70 W, an argon gas flow rate of 1 to 7 sccm, and an operating pressure of 1 to 7 mTorr, and the oxide thin film layer can be deposited with a thickness of 5 to 30 nm for 5 to 50 minutes.

[0120] More specifically, the magnetron sputtering device operates at an RF power of 50W, an argon gas flow rate of 5sccm, and an operating pressure of 5mTorr, and the oxide thin film layer can be deposited to a thickness of 12nm in 10 minutes.

[0121] After the oxide thin film layer is formed, the pattern mask disposed on the intermediate substrate can be removed from the intermediate substrate on which the nanowire layer and the oxide thin film layer are formed. By removing the pattern mask, the upper electrode layer (500) can be formed on the n-type oxide layer (400), the upper electrode layer (500) comprising one or more pattern electrodes corresponding to the shape of the electrode pattern of the pattern mask, and the pattern electrodes of the upper electrode layer (500) may include the nanowire layer and the oxide thin film layer. The transparent photovoltaic module (1) can be formed by forming the upper electrode layer (500).

[0122]

[0123] According to one embodiment of the present invention, the p-type oxide layer (200), the wide bandgap layer (300), and the n-type oxide layer (400) are sequentially deposited on the glass substrate layer (100) using a magnetron sputtering device, thereby allowing the p-type oxide layer formation step (S20), the wide bandgap layer formation step (S30), and the n-type oxide layer formation step (S40) to be processed with a single device, thereby improving the convenience of the process.

[0124]

[0125] In the present invention, in order to verify both the performance of the transparent solar module (1) when generating solar power in the atmosphere and the performance of generating solar power in an underwater environment, the following examples of the transparent solar module (1) are prepared. Examples #1 to #3 of the transparent solar module (1) according to one embodiment of the present invention may include all of the above-described glass substrate layer (100) containing FTO, p-type oxide layer (200) containing Cu2O, wide bandgap layer (300) containing Ga2O3, n-type oxide layer (400) containing ZnO, and upper electrode layer (500) containing a nanowire layer containing Ag nanowire and an oxide thin film layer containing ZnO, and the manufacturing steps of Examples #1 to #3 of the transparent solar module (1) may correspond to the manufacturing steps of the transparent solar module (1) described in FIG. 2.

[0126]

[0127] Example #1

[0128] A transparent photovoltaic module (1) comprising a glass substrate layer (100) including FTO, a p-type oxide layer (200) including Cu2O with a thickness of 650 nm, a wide bandgap layer (300) including Ga2O3 with a thickness of 14 nm, an n-type oxide layer (400) including ZnO with a thickness of 85 nm, and an upper electrode layer (500), wherein the upper electrode layer (500) has a structure in which four rectangular pattern electrodes with widths and heights of 6 mm and 7 mm, respectively, are arranged in a row on the n-type oxide layer (400), and each of the pattern electrodes includes a nanowire layer including Ag nanowires and an oxide thin film layer including ZnO with a thickness of 12 nm.

[0129]

[0130] Example #2

[0131] A transparent photovoltaic module (1) comprising a glass substrate layer (100) including FTO, a p-type oxide layer (200) including Cu2O with a thickness of 650 nm, a wide bandgap layer (300) including Ga2O3 with a thickness of 14 nm, an n-type oxide layer (400) including ZnO with a thickness of 85 nm, and an upper electrode layer (500), wherein the upper electrode layer (500) has a structure in which a total of 9 rectangular pattern electrodes with widths and heights of 4 mm and 5 mm, respectively, are arranged on the n-type oxide layer (400), and each of the pattern electrodes includes a nanowire layer including Ag nanowires and an oxide thin film layer including ZnO with a thickness of 12 nm.

[0132]

[0133] Example #3

[0134] A transparent photovoltaic module (1) comprising a glass substrate layer (100) including FTO, a p-type oxide layer (200) including Cu2O with a thickness of 650 nm, a wide bandgap layer (300) including Ga2O3 with a thickness of 14 nm, an n-type oxide layer (400) including ZnO with a thickness of 85 nm, and an upper electrode layer (500), wherein the upper electrode layer (500) has a structure in which a total of 16 rectangular pattern electrodes with widths and heights of 3 mm and 4 mm, respectively, are arranged on the n-type oxide layer (400), and each of the pattern electrodes includes a nanowire layer including Ag nanowires and an oxide thin film layer including ZnO with a thickness of 12 nm.

[0135]

[0136] Each of Examples #1, #2, and #3 differs in the size and number of pattern electrodes of the upper electrode layer (500), but the glass substrate layer (100), p-type oxide layer (200), wide bandgap layer (300), n-type oxide layer (400), and upper electrode layer (500) of Examples #1, #2, and #3 have corresponding thicknesses and materials. Below, experimental results analyzing the characteristics of the transparent photovoltaic module (1) based on Examples #1, #2, and #3 will be described. The FTO and glass shown in FIGS. 3 to 8 correspond to the glass substrate layer (100), Cu2O, Ga2O3, and ZnO correspond to the p-type oxide layer (200), wide bandgap layer (300), and n-type oxide layer (400), respectively, and the AgNW and the ZnO to AgNW / ZnO disposed above the AgNW correspond to the upper electrode layer (500).

[0137] FIG. 3 illustrates a transparent solar module (1) according to one embodiment of the present invention, a cross-sectional TEM image, an EDS image, absorbance, absorption coefficient, transmittance, and color coordinates of the transparent solar module (1).

[0138]

[0139] FIG. 3(a) illustrates a schematic diagram in which the above Example #1 is inserted into a transparent cuvette, the lower side of the glass substrate layer (100) is fixed to one side of the transparent cuvette, water is introduced into the inside of the transparent cuvette, and the upper side of the above Example #1 is in contact with water. FIG. 3(b) illustrates a cross-sectional TEM image of the above Example #1, FIG. 3(c) illustrates an enlarged cross-sectional TEM image of the upper electrode layer (500) of the above Example #1, and FIG. 3(d) illustrates an EDS image of the above Example #1. Additionally, FIG. 3(e), FIG. 3(f), FIG. 3(g), and FIG. 3(h) each illustrate details regarding the absorbance, absorption coefficient, transmittance, and color coordinates when the above Example #1 is installed in the atmosphere and when it is installed in an underwater environment.

[0140]

[0141] As described above, the upper electrode layer (500) of a transparent solar module (1) according to one embodiment of the present invention includes one or more patterned electrodes formed on the n-type oxide layer (400), and the patterned electrode may include a nanowire layer disposed on the n-type oxide layer (400) and an oxide thin film layer disposed on the nanowire layer. As shown in FIG. 3(a), the above embodiment #1 includes an upper electrode layer (500) comprising four patterned electrodes arranged in a row. When the above embodiment #1 is installed in an underwater environment, the water disposed on the upper side of the upper electrode layer (500) of the above embodiment #1 may be considered as a single layer. Hereinafter, when the transparent solar module (1) according to one embodiment of the present invention is installed in an underwater environment, the water disposed on the upper side of the transparent solar module (1) is referred to as a water layer.

[0142] As shown in FIG. 3(b), the p-type oxide layer (200) of Example #1 may have a shape in which Cu2O containing pillar-shaped crystal grains having a width of 200 nm and a height of 650 nm is disposed on the glass substrate layer (100). Additionally, as shown in FIG. 3(c), the upper electrode layer (500) of Example #1 may include a network structure made of Ag nanowires, and the diameter of the Ag nanowires may be 25 nm.

[0143]

[0144] According to one embodiment of the present invention, the network of Ag nanowires included in the upper electrode layer (500) can improve the transparency and conductivity of the transparent photovoltaic module (1) and improve electrical and thermal stability.

[0145]

[0146] As illustrated in FIG. 3(d), Example #1 may include silicon (Si), oxygen (O), tin (Sn), copper (Cu), gallium (Ga), zinc (Zn), and silver (Ag). Since silicon and tin are detected intensively at the lower side of Example #1, silicon and tin may be contained in the glass substrate layer (100). Copper can be confirmed to be detected intensively at the upper side of the area where tin is detected, and since the p-type oxide layer (200) is placed on the glass substrate layer (100), copper may be a component of Cu2O contained in the p-type oxide layer (200). Gallium is detected intensively at the upper side of the copper detection area, and zinc is detected intensively at the upper side of the gallium detection area. That is, the gallium may be a material included in the wide bandgap layer (300), and the zinc may be a material included in the n-type oxide layer (400). The silver is detected above the detection area of ​​the zinc, and by being detected in the form of a dot rather than a single layer, the network structure formed by the Ag nanowires included in the upper electrode layer (500) described above can be confirmed. Since the glass substrate layer (100), the p-type oxide layer (200), the wide bandgap layer (300), and the n-type oxide layer (400) all contain oxides, the oxygen can be detected in the entire cross-section of Example #1.

[0147]

[0148] According to one embodiment of the present invention, the transparent solar module (1) can operate in an air ambient and an underwater environment, and the underwater environment may include seawater, freshwater, tap water, and distilled water.

[0149] In addition, according to one embodiment of the present invention, the transparent solar module (1) may be operable when natural sunlight and LED artificial light are irradiated.

[0150]

[0151] Specifically, when the transparent solar module (1) is immersed in seawater, freshwater, tap water, or distilled water and operates, it may be said that the transparent solar module (1) is installed in the underwater environment.

[0152]

[0153] Hereinafter, the cases in which each of the above Examples #1, #2, and #3 is installed in the atmosphere are referred to as Example #1 (atmosphere), Example #2 (atmosphere), and Example #3 (atmosphere), and the cases in which each of the above Examples #1, #2, and #3 is installed in an underwater environment are referred to as Example #1 (underwater), Example #2 (underwater), and Example #3 (underwater).

[0154] The above Example #1 (underwater) may be a state in which the above Example #1 is inserted into a transparent cuvette as shown in FIG. 3(a), the lower side of the glass substrate layer (100) is fixed to one side of the transparent cuvette, and water is introduced into the inside of the transparent cuvette.

[0155]

[0156] As illustrated in FIG. 3(e), Example #1 (atmosphere) and Example #1 (underwater) may have relatively high absorbance at approximately 300 to 500 nm when measuring absorbance by irradiating artificial light in the wavelength range of 300 to 1050 nm. Example #1 (underwater) includes a water layer disposed above Example #1, and as ultraviolet rays incident on the surface of Example #1 are attenuated by the water layer, it may have suppressed ultraviolet rays and absorbance in the 450 nm range compared to Example #1 (atmosphere).

[0157] Meanwhile, FIG. 3(f) illustrates the result of calculating the absorption coefficient (α) based on the absorbance of Example #1 (air) and Example #1 (underwater) measured in FIG. 3(e). When the absorption coefficient is substituted into the following equation, it may be possible to calculate the light penetration depth for Example #1 (air) and Example #1 (underwater).

[0158] [Equation 1]

[0159]

[0160] Here, in [Equation 1], α is the absorption coefficient, and d t λ is the thickness of Example #1, which is 700 nm, where T is the transmittance and λ corresponds to the wavelength of light. The transmittances of Example #1 (atmosphere) and Example #1 (underwater), derived by substituting the absorption coefficient into the above equation, are shown in FIG. 3(g). As shown in FIG. 3(g), Example #1 (atmosphere) and Example #1 (underwater) can have high transmittance for light having a wavelength of 500 nm or more. In addition, the transmittance of Example #1 (underwater) has a higher value than the transmittance of Example #1 (atmosphere), which may mean that light incident on Example #1 (underwater) can penetrate deeper into the interior of Example #1 than light incident on Example #1 (atmosphere). The penetration depths of Example #1 (underwater) and Example #1 (atmosphere) at 460 nm light are 62.5 nm and 50 nm, respectively, and the light incident on Example #1 (underwater) can penetrate about 10 to 12 nm deeper into the interior of Example #1 compared to the light incident on Example #1 (atmosphere).

[0161]

[0162] That is, the transparent solar module (1) according to one embodiment of the present invention has a deeper light penetration depth when installed in an underwater environment than when installed in the atmosphere, thereby allowing incident light to penetrate deeper into the transparent solar module (1), thereby suppressing surface absorption and improving photovoltaic power generation efficiency.

[0163] In addition, the transparent solar module (1) according to one embodiment of the present invention has a transmittance of 50% or more in the visible light range and exhibits high transparency, thereby having the effect of expanding the application range of the device.

[0164]

[0165] FIG. 3(h) illustrates the color coordinates of Example #1 (atmosphere) and Example #1 (underwater). Each of Example #1 (atmosphere) and Example #1 (underwater) may display a beige to gold color when observed with the naked eye. However, as previously mentioned, Example #1 (atmosphere) and Example #1 (underwater) may have high transmittance in the visible light range with a wavelength of 500 nm or more, so they may appear as translucent or transparent devices in the beige to gold color range when observed with the naked eye.

[0166]

[0167] FIG. 4 illustrates a transparent solar module (1) according to one embodiment of the present invention and details regarding the electrical characteristics of the transparent solar module (1).

[0168]

[0169] According to one embodiment of the present invention, the transparent solar module (1) may have a higher power conversion efficiency (PCE) in an underwater environment than in an environment in contact with air.

[0170] According to one embodiment of the present invention, when the transparent solar module (1) operates underwater, the straightness of light is improved by the refractive index of water, so the fill factor (FF) may be 10% or more.

[0171] According to one embodiment of the present invention, the transparent solar module (1) may have a power conversion efficiency (PCE) of 1% or more when operating underwater.

[0172]

[0173] FIG. 4(a) illustrates Example #3, FIG. 4(b) illustrates Example #3 (underwater) installed in an underwater environment, FIG. 4(c) illustrates the current density-voltage curves of Example #3 (air) and Example #3 (underwater), FIG. 4(d) illustrates the power density-voltage curves of Example #3 (air) and Example #3 (underwater), FIG. 4(e), FIG. 4(f), FIG. 4(g), and FIG. 4(h) each illustrate the short-circuit current, open-circuit voltage, fill factor, and power conversion efficiency of Example #3 (air) and Example #3 (underwater).

[0174]

[0175] Embodiment #3 illustrated in FIG. 4(a) can be installed in an underwater environment as illustrated in FIG. 3(b). Embodiment #3 (underwater) illustrated in FIG. 3(b) may use the upper electrode layer (500) as the cathode and the glass substrate layer (100) as the anode. Embodiment #3 (underwater) is placed in water at a depth of 1.2 cm, and the water layer of Embodiment #3 (underwater) may have a flat surface. The light irradiated on Embodiment #3 (underwater) and Embodiment #3 (atmosphere) is 100 mW / cm² under AM1.5G conditions. 2 It has the strength of and can be irradiated vertically toward the ground from the upper side of Example #3 (underwater) and Example #3 (atmosphere).

[0176] As shown in FIG. 4(c), each of the above Examples #3 (atmosphere) and #3 (underwater) can exhibit photovoltaic power generation characteristics in which the current density value is negative when light is irradiated and a voltage having a positive value is applied.

[0177] FIG. 4(d) illustrates the output power as a function of voltage based on the current-voltage curves of Example #3 (Standing) and Example #3 (Underwater) measured in FIG. 4(c). As shown in FIG. 4(d), the maximum output power (P) of Example #3 (Underwater) max ) is approximately 3.05 mW / cm² 2And, the maximum output power of the above Example #3 (standby) is approximately 2.5 mW / cm² 2 Thus, the above Example #3 (underwater) can have a maximum output power value increased by about 22% compared to the above Example #3 (standby).

[0178] As shown in FIG. 4(e), the short-circuit current (J) of Example #3 (underwater) sc ) is approximately -8.21 mA / cm 2 As the short-circuit current value of Example #3 (Standby) above is -7.14 mA / cm 2 Approximately 1 mA / cm 2 It can have an improved value. The underwater short-circuit current value of the transparent solar module (1) according to one embodiment of the present invention is -8.21 mA / cm 2 This may correspond to a value larger than the short-circuit current reported in conventionally studied InGaP, DSSC cells, and BiFeO3-based underwater photovoltaic devices.

[0179] As shown in FIG. 4(f), the open-circuit voltage (V) of Example #3 (underwater) above oc ) is 0.7914V, and the open-circuit voltage of Example #3 (standby) may be 0.751V. In addition, the fill factor shown in FIG. 4(g) can be calculated as follows.

[0180] [Equation 2]

[0181]

[0182] In [Equation 2], FF can be a fill factor, and P max may be the aforementioned maximum output power value, and J sc can be a short-circuit current value, and V oc is the open-circuit voltage value. The fill factor is a very important measure in the quality evaluation of a photovoltaic module and can represent the efficiency of the photovoltaic module; the closer it is to 100%, the more it can be evaluated as an ideal photovoltaic module. As shown in Fig. 4(g), the fill factor values ​​of Example #3 (underwater) and Example #3 (atmosphere) can have corresponding values ​​of approximately 46.8%.

[0183] Based on the above fill factor value, the power conversion efficiency (PCE) of Example #3 (underwater) and Example #3 (atmosphere) can be calculated. As shown in FIG. 4(h), Example #3 (underwater) can exhibit a power conversion efficiency of 2.59%, and Example #3 (atmosphere) can exhibit a power conversion efficiency of 2.13%. The power conversion efficiency of the transparent photovoltaic module (1) according to one embodiment of the present invention can have a power conversion efficiency that is improved by up to 21.1% compared to conventional photovoltaic power devices based on organic materials, amorphous silicon, ZnO wide bandgap materials, etc.

[0184] In the above Example #3 (underwater), by operating underwater, the straightness of the irradiated light can be improved by the refractive index of the water placed above Example #3 (underwater), and by improving the straightness of the irradiated light, the performance of the photovoltaic module can be improved compared to Example #3 (atmosphere). A more detailed explanation regarding the refractive index of the water will be provided in the drawings described later.

[0185]

[0186] That is, the transparent solar module (1) according to one embodiment of the present invention can have a higher short-circuit current, open-circuit voltage, and power conversion efficiency than when the transparent solar module (1) is installed in an underwater environment by including a water layer, thereby exhibiting the effect of improving device performance.

[0187]

[0188] FIG. 5 illustrates the incident photon-to-current conversion efficiency (IPCE) and power conversion efficiency (PCE) of a transparent solar module (1) according to one embodiment of the present invention.

[0189]

[0190] FIG. 5(a) illustrates the incident photon-to-current conversion efficiency (IPCE) of Example #3, and FIG. 5(b) illustrates the power conversion efficiency (PCE) of Example #3.

[0191]

[0192] As shown in FIG. 5(a), Example #3 (underwater) and Example #3 (atmosphere) according to one embodiment of the present invention may have a photoelectric conversion efficiency value of 80% or more in a wavelength range of 365 to 480 nm, and the photoelectric conversion efficiency of Example #3 (underwater) may have a higher value than the photoelectric conversion efficiency of Example #3 (atmosphere).

[0193] As described above, since Example #1 can have high absorbance in the wavelength range of 300 to 500 nm, Example #3, which has a structure corresponding to Example #1 but differs only in the size and number of pattern electrodes of the upper electrode layer (500), can have optical characteristics corresponding to Example #1. That is, Example #3 has high absorbance in the wavelength range of 300 to 500 nm, and in particular, since Example #3 (underwater) can have a deeper light penetration depth compared to Example #3 (atmosphere) by including the water layer, Example #3 (underwater) can have a higher photoelectric conversion efficiency than Example #3 (atmosphere) in the wavelength range of 365 to 480 nm.

[0194] As illustrated in FIG. 5(b), when monochromatic light is irradiated at each wavelength to Example #3 (underwater) and Example #3 (atmosphere), the power conversion efficiency of Example #3 (underwater) and Example #3 (atmosphere) can each have partially corresponding values. In particular, Example #3 (atmosphere) can achieve a power conversion efficiency of about 6% in the wavelength range of 365 to 470 nm, and Example #3 (underwater) can increase the power conversion efficiency to about 10.25% when monochromatic light of 470 nm is irradiated.

[0195]

[0196] FIG. 6 illustrates the electrical characteristics measured in each case where a transparent solar module (1) according to one embodiment of the present invention is installed in the atmosphere, in an underwater environment (distilled water), in an underwater environment (tap water), and in an underwater environment (saltwater).

[0197]

[0198] FIG. 6(a) schematically illustrates the installation of Example #2 in an underwater environment to determine underwater photovoltaic power generation characteristics, FIG. 6(b) illustrates the output power characteristics of Example #2 according to the depth of the underwater environment in which Example #2 is installed, and FIG. 6(c) illustrates the power conversion efficiency of Example #2 according to the type of underwater environment in which Example #2 is installed.

[0199]

[0200] Specifically, a transparent solar module (1) according to one embodiment of the present invention may be installed in an underwater environment, and the above embodiment #2 may be installed in a device as shown in FIG. 6(a) to determine underwater solar power generation characteristics according to the thickness or composition of the water layer. In the above embodiment #2 (underwater), an O-ring chamber including an O-ring rubber packing may be disposed on top of the upper electrode layer (500), and the thickness of the water layer of the above embodiment #2 (underwater) can be controlled by injecting water into the O-ring chamber. In addition, the composition of the water layer included in the above embodiment #2 (underwater) can be controlled by changing the type of water injected into the O-ring chamber.

[0201] The water layer of Example #2 (underwater) above may have a thickness of 0 to 20 mm. As shown in FIG. 6(b), Example #2 is 2.193 mW / cm² in the case of Example #2 (atmosphere) where the thickness of the water layer is 0 mm. 2 It can have a maximum output power value. Meanwhile, in the above Example #2 (underwater), when the thickness of the water layer is 12 mm, the maximum output power value is 3.611 mW / cm² 2 It can be improved up to, and when the thickness of the above water layer increases to 20 mm, the maximum output power value of Example #2 (underwater) is 2.516 mW / cm² 2 It can be reduced again. However, it can be confirmed that even when the thickness of the water layer in Example #2 (underwater) increases, it has a value greater than the maximum output power value of Example #2 (atmosphere).

[0202]

[0203] Meanwhile, the power conversion efficiency of Example #2 (underwater) according to the composition of the above water layer may be as shown in FIG. 6(c). Specifically, Example #2 (underwater) can measure underwater photovoltaic power generation characteristics in distilled water, tap water, and saltwater environments, and the thickness of each water layer including distilled water, tap water, and saltwater may be 0 to 20 mm. The saltwater may be used to simulate underwater photovoltaic power generation in seawater. Hereinafter, the case where the water layer of Example #2 (underwater) is distilled water is referred to as Example #2 (underwater / distilled water), the case where the water layer of Example #2 (underwater) is tap water is referred to as Example #2 (underwater / tap water), and the case where the water layer of Example #2 (underwater) is saltwater is referred to as Example #2 (underwater / saltwater).

[0204] As illustrated in FIG. 6(c), Example #2 (underwater / distilled water), Example #2 (underwater / tap water), and Example #2 (underwater / saltwater) each may have the highest power conversion efficiency when containing an aqueous layer of approximately 12.5 mm in the range of 0 to 20 mm. When the thickness of the aqueous layer is approximately 12.5 mm, the power conversion efficiencies of Example #2 (underwater / distilled water), Example #2 (underwater / tap water), and Example #2 (underwater / saltwater), respectively, may be 3.61%, 3.78%, and 3.41%. The maximum output power of Example #2 (underwater / tap water) is approximately 3.78 mW / cm² 2 It can have a maximum output power value that is 80% higher than that of Example #2 (Standing). While Example #2 (Underwater / Saltwater) has a higher power conversion efficiency than Example #2 (Standing), it can have a relatively lower power conversion efficiency compared to Example #2 (Underwater / Distilled Water) and Example #2 (Underwater / Tap Water).

[0205] That is, the above-mentioned water layer can affect the generation and recombination of photocharges of a transparent solar module (1) according to one embodiment of the present invention, and it can be interpreted that the effect on the transparent solar module (1) may vary depending on the thickness and composition of the water layer.

[0206]

[0207] FIG. 7 illustrates the electrical characteristics according to the angle of incidence of incident light for a transparent solar module (1) according to one embodiment of the present invention.

[0208]

[0209] According to one embodiment of the present invention, the transparent solar module (1) can perform underwater solar power generation by operating underwater to convert light energy into electrical energy, and when performing underwater solar power generation, water placed adjacent to the upper side of the transparent solar module (1) can function as a concentrating lens.

[0210]

[0211] FIG. 7(a) illustrates a schematic diagram of light incident from various angles when a transparent solar module (1) according to one embodiment of the present invention is installed in an underwater environment, FIG. 7(b) illustrates light incident from various angles when the embodiment #3 is installed in an underwater environment, FIG. 7(c) and FIG. 7(d) each illustrate details regarding the short-circuit current and power conversion efficiency of the embodiment #3 according to the angle of light incident on the embodiment #3, FIG. 7(e) and FIG. 7(f) each illustrate a schematic diagram and an actual view of the embodiment #2 installed in an underwater environment, sunlight collected by a Fresnel lens, and an electric fan installed on the embodiment #2.

[0212]

[0213] Specifically, when a transparent solar module (1) according to one embodiment of the present invention is installed in an underwater environment, light incident on the transparent solar module (1) may be incident within an angle range of 0 to 60°. Assuming that actual sunlight is incident on the transparent solar module (1), the angle at which the sunlight is incident on the transparent solar module (1) may change depending on the season and time of day. Additionally, basically, when light travels through air and is incident on another medium, some of the light may be reflected at the boundary between the air and the other medium, and some of the light that is not reflected may be refracted and incident on the inside of the other medium.

[0214] In order to respond to actual sunlight with continuously changing incident angles, it is desirable to form a photovoltaic module that has excellent performance for all incident angles. A transparent photovoltaic module (1) according to one embodiment of the present invention can maintain a power conversion efficiency of about 2% at an angle of 0 to 60°, and thus has the stability to produce a certain amount of output power even when the angle of light incident changes, making it suitable for actual application.

[0215]

[0216] In the following, the case where the above-mentioned transparent solar module (1) is installed in the atmosphere is referred to as the transparent solar module (atmosphere), and the case where the above-mentioned transparent solar module (1) is installed in an underwater environment and includes a water layer is referred to as the transparent solar module (underwater).

[0217] As illustrated in FIG. 7(a), light at various angles can be incident on the transparent solar module (1), and the transparent solar module (underwater) includes a water layer having a refractive index (n) different from that of air, unlike the transparent solar module (atmosphere), so that the light incident on the transparent solar module (underwater) can be refracted. In addition, the refractive index (n) and the angle of incidence (θ) of the light iAccording to ), the light may be totally reflected inside the incident material. When the light travels from one medium (n1) to another medium (n2), the critical angle can be calculated as follows.

[0218] [Equation 3]

[0219]

[0220] In [Equation 3], θ c is the critical angle, n1 is the refractive index of the one medium, and n2 corresponds to the refractive index of the other medium into which the light is incident. When the critical angle is greater than the angle of incidence of the light incident on the medium (θ c >θ i ), the incident light can penetrate the medium, and in the case where the critical angle is smaller than the angle of incidence of the light incident on the medium (θ c <θ i ), the incident light can be reflected from the surface of the medium.

[0221] Meanwhile, when light having a wavelength of 550 nm is incident on the transparent photovoltaic module (1), the glass and FTO included in the glass substrate layer (100) of the transparent photovoltaic module (1), the Cu2O included in the p-type oxide layer (200), the Ga2O3 included in the wide bandgap layer (300), and the ZnO included in the n-type oxide layer (400) and the upper electrode layer (500) may each have refractive indices of 1.55, 1.85, 2.75, 1.8, and 1.98, respectively, with respect to the light having a wavelength of 550 nm. Hereinafter, the light having a wavelength of 550 nm is referred to as light.

[0222] The critical angle when the light is incident on the ZnO in air is 30.4°, and the critical angle when the light is incident on the ZnO in water is 48.9°. That is, since the transparent solar module (underwater) has a larger critical angle for light incident on its surface than the transparent solar module (atmosphere), it can transmit light incident over a wider angle range instead of reflecting it, thereby capturing it inside the transparent solar module (underwater).

[0223] That is, as described above, the water layer can improve the straightness of light due to the refractive index of water, and by capturing the light incident from the atmosphere instead of reflecting it and transmitting it to the transparent solar module (underwater), it can reduce the reflection on the surface of the transparent solar module (1) caused by the mismatch in refractive index between the air and the transparent solar module (1), and help the incident light penetrate into the transparent solar module (underwater) over a wider angle range.

[0224] In addition, light captured inside the transparent solar module (underwater) can be trapped inside the transparent solar module (underwater) without being emitted to the outside of the transparent solar module (underwater) by generating total internal reflection at the interfaces of the glass substrate layer (100), p-type oxide layer (200), wide bandgap layer (300), and n-type oxide layer (400). The light trapped by total internal reflection inside the transparent solar module (underwater) can be absorbed by the p-type oxide layer (200), which is the light absorption layer of the transparent solar module (1), and generate photocharge.

[0225]

[0226] That is, the water layer according to one embodiment of the present invention can increase the critical angle of light incident on the transparent solar module (1) placed in an underwater environment and perform the role of a concentrating lens that collects light incident over a wide angle range and transmits it to the transparent solar module (1), thereby having the effect of improving the underwater solar power generation efficiency of the transparent solar module (1).

[0227]

[0228] As illustrated in FIG. 7(b), light can be irradiated at various angles in Example #3 (underwater). The short-circuit current and power conversion efficiency according to the angle of incidence of light in Example #3 (underwater) and Example #3 (atmosphere) are as illustrated in FIG. 7(c) and FIG. 7(d). As previously mentioned, since Example #3 (underwater) includes a water layer to capture more light and perform photovoltaic power generation, it can have a higher short-circuit current value and a higher power conversion efficiency than Example #3 (atmosphere). In particular, Example #3 (underwater) and Example #3 (atmosphere) can exhibit excellent power conversion efficiency within an angle range of 20 to 40°, and it can be confirmed that Example #3 (underwater) has a power conversion efficiency of 3.35% when light is incident at 20°.

[0229] FIGS. 7(e) and FIGS. 7(f) illustrate a drawing and an actual test apparatus for testing the actual underwater solar power generation performance of the transparent solar module (1) according to one embodiment of the present invention. The transparent solar module (1) of the test apparatus may use the embodiment #2 (underwater), and a Fresnel lens with a focal length of approximately 120 mm may be placed on the upper side of the apparatus to intensively irradiate sunlight onto the embodiment #2 (underwater). A fan installed in the test apparatus is connected to the embodiment #2 (underwater) and may be operated using the photocurrent generated through underwater solar power generation in the embodiment #2 (underwater).

[0230] It was confirmed that when sunlight is irradiated onto the test device, the above Example #2 (underwater) generates a photocurrent to operate the fan, and accordingly, the transparent solar module (1) according to one embodiment of the present invention can be applied in reality and can support the continuous production of output power at a level capable of operating the fan in real time when appropriate lighting is irradiated.

[0231]

[0232] FIG. 8 schematically illustrates a transparent solar module (1) according to one embodiment of the present invention when installed in the atmosphere and when installed in an underwater environment, and a band diagram of the transparent solar module (1).

[0233]

[0234] FIG. 8(a) schematically illustrates cross-sections of a transparent solar module (1) according to an embodiment of the present invention when installed in the atmosphere and when installed in an underwater environment, respectively; FIG. 8(b) illustrates details regarding the Mott-Schottky characteristics of the transparent solar module (1); FIG. 8(c) schematically illustrates the energy level of the transparent solar module (1); FIG. 8(d) and FIG. 8(e) schematically illustrate energy band diagrams when the transparent solar module (1) is installed and operated in the atmosphere and when installed and operated in an underwater environment, respectively.

[0235]

[0236] According to one embodiment of the present invention, when the transparent solar module (1) generates solar power underwater, water placed adjacent to the upper side of the transparent solar module (1) performs the role of the aforementioned concentrating lens and can simultaneously affect the electrochemical characteristics of the transparent solar module (1).

[0237] Specifically, according to one embodiment of the present invention, when the transparent solar module (1) operates underwater, an electric double layer is formed at the interface between the upper surface of the transparent solar module (1) and water adjacent to the upper surface of the transparent solar module (1), and the electric double layer can perform the role of promoting the generation of an electric field by the light and the movement of photocharges generated in the transparent solar module (1) when light is irradiated onto the transparent solar module (1).

[0238]

[0239] More specifically, the water contains water molecules, and hydronium ions (H3O) formed as the water molecules ionize. + ) and hydroxides (OH - It may further include ions such as ). The ions contained in the water can act as charge carriers in a localized area and, since they have electrical properties, can affect the electric field of the transparent solar module (underwater).

[0240] As illustrated in FIG. 8(a), the transparent solar module (atmosphere) does not undergo electrochemical interaction between the atmosphere and the upper electrode layer (500), whereas the transparent solar module (underwater) undergoes electrical interaction between the ions contained in the water layer and the upper electrode layer (500), thereby forming an electric double layer (EDL). The transparent solar module (atmosphere) and the transparent solar module (underwater) can form a space charge region (SCR) on the inside through the junction between the layers contained therein, and can form a quasi-neutral region below the space charge region. In the space charge region, charge moves by electrostatic driving force, whereas in the quasi-neutral region, charge movement may occur by the diffusion of minority carriers rather than electrostatic driving force. Therefore, when the thickness of the aforementioned quasi-neutral region is greater than the diffusion distance of the charge, the charge may recombine and disappear during diffusion within the quasi-neutral region. On the other hand, since the probability of recombination occurring in the space charge region is relatively lower compared to the quasi-neutral region, the charge transfer efficiency is higher, and superior photoelectric conversion efficiency and power conversion efficiency can be obtained as the space charge region becomes wider.

[0241] The space charge region formed on the inner side of the transparent solar module (underwater) may have a thickness greater than that of the space charge region formed on the inner side of the transparent solar module (atmosphere) due to the electric double layer formed on the upper electrode layer (500). As the thickness of the space charge region of the transparent solar module (underwater) increases, the thickness of the quasi-neutral region of the transparent solar module (underwater) may decrease compared to the thickness of the quasi-neutral region of the transparent solar module (atmosphere). As the thickness of the space charge region increases, photoelectrons generated by light that has penetrated to the inner side of the p-type oxide layer (200) of the transparent solar module (underwater) may have a higher probability of moving in the space charge region rather than the quasi-neutral region. Therefore, the above transparent solar module (underwater) has a wider space charge region and a narrower quasi-neutral region compared to the transparent solar module (atmosphere), which reduces the probability of recombination of generated photocharges and enables higher power conversion efficiency.

[0242]

[0243] Meanwhile, Mott-Schottky measurements may be performed to further analyze the electrochemical characteristics of a transparent photovoltaic module (underwater) according to one embodiment of the present invention. The transparent photovoltaic module (underwater) may be placed in an underwater environment with a water layer consisting of distilled water, tap water, and saltwater, respectively, to perform Mott-Schottky measurements. As illustrated in FIG. 8(b), the transparent photovoltaic module (underwater) may have different slopes depending on the composition of the water layer. When the water layer of the transparent photovoltaic module (underwater) is distilled water, tap water, and saltwater, the respective flat band potentials may be 1.15V, 1.35V, and 0.7V. In the case of a transparent photovoltaic module (atmosphere), the flat band potential may be 0.95V.

[0244] As shown in FIG. 8(c), the energy levels of each material included in the transparent photovoltaic module (1) can all have different values, and as shown in FIG. 8(d), a junction can be formed and have the shape of a bent band. The Cu2O of the p-type oxide layer (200) of the transparent photovoltaic module (atmosphere) can form a pn junction with the Ga2O3 of the wide band gap layer (300), and at the interface between the p-type oxide layer (200) and the wide band gap layer (300), the band is bent by the pn junction, so that the photocharge generated in the p-type oxide layer (200) can move in the direction of the wide band gap layer (300) without being hindered. However, since an energy barrier may be formed at the interface between the wide bandgap layer (300) and the n-type oxide layer (400), photocharges that have moved to the wide bandgap layer (300) may not be able to move to the n-type oxide layer (400) and may be recombined.

[0245] The above transparent solar module (underwater) may have a shape of a curved band corresponding to the above transparent solar module (atmosphere). However, as shown in FIG. 8(e), the degree of curvature of the curved band may be modified by further including the water layer that affects the electric field of the above transparent solar module (underwater). The water layer may reduce the energy barrier at the interface between the wide bandgap layer (300) and the n-type oxide layer (400) occurring inside the above transparent solar module (underwater), and as the energy barrier is reduced, the photocharge that has moved to the wide bandgap layer (300) may easily move to the n-type oxide layer (400), so that the photocharge is not recombined and can be used as output power.

[0246]

[0247] That is, the water layer according to one embodiment of the present invention electrically interacts with the transparent solar module (1) to increase the space charge region inside the transparent solar module (1) and lower the energy barrier at the interface, thereby allowing the photocharge generated in the transparent solar module (1) to be used as output power without recombination, and thus can have the effect of improving the efficiency of underwater solar power generation.

[0248]

[0249] According to one embodiment of the present invention, a transparent photovoltaic module can produce electrical energy by using Cu2O as a light-absorbing layer and absorbing light in the 400 to 600 nm range incident into the water, rather than light in the infrared and some ultraviolet ranges absorbed by water, thereby improving suitability as an underwater photovoltaic power generation device.

[0250] According to one embodiment of the present invention, when a transparent solar module is placed underwater, the water placed above the transparent solar module functions as a concentrating lens for the transparent solar module, thereby enabling an effect of improving the power conversion efficiency of underwater solar power generation.

[0251] According to one embodiment of the present invention, since the transparent solar module has light transmittance, when used for underwater solar power generation, it does not block sunlight incident on the water, thereby minimizing the impact on the underwater ecosystem and exhibiting an effect of improved environmental friendliness.

[0252] According to one embodiment of the present invention, the glass substrate layer, the wide bandgap layer, the n-type semiconductor layer, and the upper electrode layer include a transparent material, thereby enabling the effect of improving the transmittance of the transparent photovoltaic module.

[0253] According to one embodiment of the present invention, a transparent photovoltaic module can improve photovoltaic conversion efficiency by including a Cu2O / Ga2O3 heterojunction structure, thereby preventing the recombination of photoelectrons generated in the p-type oxide layer.

[0254] According to one embodiment of the present invention, the p-type oxide layer, the wide bandgap layer, and the n-type oxide layer are sequentially deposited on a glass substrate layer using a magnetron sputtering device, thereby processing the p-type oxide layer formation step, the wide bandgap layer formation step, and the n-type oxide layer formation step with a single device, thereby providing the effect of improving process convenience.

[0255] According to one embodiment of the present invention, a network of Ag nanowires included in the upper electrode layer can improve the transparency and conductivity of a transparent photovoltaic module and improve electrical and thermal stability.

[0256] According to one embodiment of the present invention, when a transparent solar module is installed in an underwater environment, it has a deeper light penetration depth than when installed in the atmosphere, thereby allowing incident light to penetrate deeper into the transparent solar module, which suppresses surface absorption and improves photovoltaic power generation efficiency.

[0257] According to one embodiment of the present invention, a transparent solar module can exhibit high transparency with a transmittance of 50% or more in the visible light range, thereby having the effect of expanding the application range of the device.

[0258] According to one embodiment of the present invention, when a transparent solar module is installed in an underwater environment, it includes a water layer, thereby having a higher short-circuit current, open-circuit voltage, and power conversion efficiency than when the transparent solar module is installed in the atmosphere, so that the device performance can be improved.

[0259] According to one embodiment of the present invention, the water layer can increase the critical angle of light incident on a transparent solar module placed in an underwater environment and perform the role of a concentrating lens that collects light incident over a wide angle range and transmits it to the transparent solar module, thereby improving the underwater solar power generation efficiency of the transparent solar module.

[0260] According to one embodiment of the present invention, the water layer electrically interacts with the transparent photovoltaic module to increase the space charge region inside the transparent photovoltaic module and lower the energy barrier at the interface, thereby allowing the photovoltaic charge generated in the transparent photovoltaic module to be used as output power without recombination, thus enabling the efficiency of underwater photovoltaic power generation to be improved.

[0261]

[0262] Although the embodiments have been described above with reference to limited examples and drawings, those skilled in the art can make various modifications and variations from the description above. For example, suitable results may be achieved even if the described techniques are performed in a different order than described, and / or if the components of the described system, structure, device, circuit, etc. are combined or assembled in a form different from described, or replaced or substituted by other components or equivalents. Therefore, other implementations, other embodiments, and equivalents to the claims below are also within the scope of the claims.

Claims

1. A transparent photovoltaic module capable of operating underwater, formed of an oxide semiconductor including a p / n heterojunction, A glass substrate layer containing a conductive material; A p-type oxide layer disposed on the above glass substrate layer; An n-type oxide layer disposed on the above p-type oxide layer; and It includes an upper electrode layer disposed on the above n-type oxide layer, and The above transparent solar module has a transmittance of 20% or more and is capable of operating in the atmosphere to convert light energy into electrical energy.

2. A transparent photovoltaic module capable of operating underwater, formed of an oxide semiconductor including a p / n heterojunction, A glass substrate layer containing a conductive material; n-type oxide layer disposed on the above glass substrate layer; A p-type oxide layer disposed on the above n-type oxide layer; and A top electrode layer disposed on the above p-type oxide layer; comprising, The above transparent solar module has a transmittance of 20% or more and is capable of operating in the atmosphere to convert light energy into electrical energy.

3. In Claim 1, The above transparent solar module is, Each comprising one or more of the above p-type oxide layer and the above n-type oxide layer, and The above p-type oxide layer comprises one or more of NiO, CuO, Cu2O to Co3O4, and The above n-type oxide layer comprises one or more of Ga2O3, ZnO, In2O3, SnO2 to BiVO4, in a transparent photovoltaic module.

4. In Claim 3, A transparent photovoltaic module comprising a plurality of n-type oxide layers, wherein the remaining n-type oxide layers, excluding any one of the plurality of n-type oxide layers, perform the role of a wide bandgap layer.

5. A transparent photovoltaic module comprising a Cu2O / Ga2O3 heterojunction and capable of operating underwater, A glass substrate layer containing a conductive material; A p-type oxide layer comprising Cu2O disposed on the above glass substrate layer; A wide bandgap layer comprising Ga2O3 disposed on the above p-type oxide layer; n-type oxide layer disposed on the above wide bandgap layer; and It includes an upper electrode layer disposed on the above n-type oxide layer, and The above transparent solar module is a transparent solar module capable of operating underwater to convert light energy into electrical energy.

6. In Claim 5, The above transparent solar module is, A transparent photovoltaic module in which a Cu2O / Ga2O3 heterojunction structure is formed by the above-mentioned p-type oxide layer and wide bandgap layer 7. In Claim 1, The above transparent solar module is a transparent solar module that has a higher power conversion efficiency (PCE) in an underwater environment than in an environment in contact with air.

8. In Claim 1, The above transparent solar module is a transparent solar module having a Fill Factor (FF) of 10% or more, as the straightness of light is improved by the refractive index of water when operating underwater.

9. In Claim 1, The above transparent solar module is a transparent solar module having a power conversion efficiency (PCE) of 1% or more when operating underwater.

10. In Claim 5, A transparent photovoltaic module in which the n-type oxide layer and the upper electrode layer each have a thickness of 1 to 1000 nm and are formed in a single-layer or multi-layer structure.

11. In Claim 5, A transparent photovoltaic module, wherein the above p-type oxide layer is formed by magnetron sputtering for 1 to 60 minutes under conditions of sputtering power of 1 to 500 W, argon (Ar) gas flow rate of 1 to 100 sccm, oxygen (O2) gas flow rate of 0.1 to 50 sccm, operating pressure of 1 to 50 mTorr, and temperature of 100 to 800°C.

12. In Claim 5, A transparent photovoltaic module in which the wide bandgap layer and the n-type oxide layer are each formed by magnetron sputtering for 1 to 60 minutes under conditions of RF power of 1 to 100 W, an argon (Ar) gas flow rate of 0.1 to 10 sccm, and an operating pressure of 1 to 10 mTorr.

13. In Claim 1, The above transparent solar module is, It is capable of underwater solar power generation that operates underwater and converts light energy into electrical energy, and A transparent solar module in which, when generating underwater solar power, water positioned adjacent to the upper side of the transparent solar module can function as a concentrating lens.

14. In Claim 1, The above transparent solar module is, When operating underwater, an electric double layer is formed at the interface between the upper surface of the transparent solar module and the water positioned adjacent to the upper surface of the transparent solar module. The above electric double layer is, A transparent solar module capable of performing the role of generating an electric field by the light and promoting the movement of photocharges generated in the transparent solar module when light is irradiated onto the transparent solar module.

15. In Claim 1, The above transparent solar module is, It can operate in ambient and underwater environments, and A transparent solar module in which the above underwater environment comprises one or more of seawater, freshwater, tap water, and distilled water.

16. In Claim 1, The above transparent solar module is, A transparent solar module capable of operating when illuminated by natural sunlight and LED artificial light.

17. A method for manufacturing a transparent photovoltaic module capable of operating underwater, formed of an oxide semiconductor including a p / n heterojunction, wherein A substrate preparation step for placing a glass substrate layer containing a conductive material; A p-type oxide layer formation step of placing a p-type oxide layer on the above glass substrate layer; An n-type oxide layer formation step of placing an n-type oxide layer on the above p-type oxide layer; and A step of forming an upper electrode layer by placing an upper electrode layer on the above n-type oxide layer; A method for manufacturing a transparent solar module, wherein the transparent solar module has a transmittance of 20% or more and can operate in the atmosphere to convert light energy into electrical energy. 18.Cu2O / Ga2O3 A method for manufacturing a transparent photovoltaic module capable of operating underwater and including a heterojunction, A substrate preparation step for placing a glass substrate layer containing a conductive material; A p-type oxide layer formation step of placing a p-type oxide layer containing Cu2O on the above glass substrate layer; A wide band gap layer formation step of placing a wide band gap layer containing Ga2O3 on the above p-type oxide layer; n-type oxide layer formation step of placing an n-type oxide layer on the above wide bandgap layer; and A step of forming an upper electrode layer by placing an upper electrode layer on the above n-type oxide layer; A method for manufacturing a transparent solar module capable of operating underwater to convert light energy into electrical energy.

19. In Claim 18, A method for manufacturing a transparent photovoltaic module, wherein the n-type oxide layer and the upper electrode layer each have a thickness of 1 to 1000 nm and are formed in a single-layer or multi-layer structure.

20. In Claim 18, A method for manufacturing a transparent photovoltaic module, wherein the p-type oxide layer is formed by magnetron sputtering for 1 to 60 minutes under conditions of sputtering power of 1 to 500 W, argon (Ar) gas flow rate of 1 to 100 sccm, oxygen (O2) gas flow rate of 0.1 to 50 sccm, operating pressure of 1 to 50 mTorr, and temperature of 100 to 800°C.

21. In Claim 18, A method for manufacturing a transparent photovoltaic module, wherein the wide bandgap layer and the n-type oxide layer are each formed by magnetron sputtering for 1 to 60 minutes under conditions of RF power of 1 to 100 W, argon (Ar) gas flow rate of 0.1 to 10 sccm, and operating pressure of 1 to 10 mTorr.

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