Pedestal processing method, pedestal, and semiconductor device process chamber

Abstract

Disclosed in the present invention are a pedestal processing method, a pedestal, and a semiconductor device process chamber. The pedestal processing method comprises: providing a process chamber and a calculation apparatus, wherein opening reference information and depth reference information of a recessed structure are pre-stored in the calculation apparatus; controlling an optical ranging apparatus to emit a ranging beam to the bottom surface of a specific recess of the rotating pedestal; on the basis of optical ranging information, the optical ranging apparatus sending ranging information to the calculation apparatus; the calculation apparatus calculating a vibration difference of the pedestal; the calculation apparatus obtaining a design depth on the basis of the vibration difference and the depth reference information, making the design depth greater than the vibration difference, and obtaining design opening size information on the basis of the opening reference information; and on the basis of the design depth and the design opening size information, forming the recessed structure in a processing region of the pedestal. Thus, the present invention avoids the impact of pedestal vibration on the ranging and positioning of a recessed structure, thereby ensuring that an optical measurement apparatus scans only substrates in recesses, and improving the accuracy of the optical measurement of a coating thickness.

Description

Substrate fabrication methods, substrates and semiconductor equipment process chambers

[0001] This application is based on and claims priority to Chinese Patent Application No. 202411632160.8, filed on November 15, 2024, entitled "Base Processing Method, Base and Semiconductor Equipment Process Chamber", the entire disclosure of which is incorporated herein by reference. Technical Field

[0002] This invention relates to the field of semiconductor measurement technology, and more specifically to a substrate processing method, a substrate, and a semiconductor equipment process chamber. Background Technology

[0003] Vapor deposition is an important method for growing semiconductor materials within semiconductor equipment. It involves depositing reactive gases onto the surface of a wafer substrate under appropriate temperature and pressure conditions to form a semiconductor material layer. The uniformity of the material layer deposited on the wafer surface is a crucial indicator of its quality. Rotating the wafer substrate support device to rotate the substrate is an important method for improving uniformity.

[0004] During the growth of semiconductor material layers, optical detection devices (such as spectrometers) are used to emit detection beams of specific wavelength ranges from the semiconductor material layer. The spectral information of the detected light in the specific wavelength range can be used to obtain information such as the growth rate of the semiconductor material layer, thereby providing a reference for process control.

[0005] Because the carrier device rotates during the manufacturing process, the sampling points of the optical detection device will fall outside the wafer carrier area used to house the wafer substrate, specifically in the non-carrier area. The optical information from this non-carrier area is also incorporated into subsequent integration calculations by the optical detection device, leading to weak or even lost fluorescence signals. To address this issue, existing technologies employ a ranging reference object placed at the edge of the carrier device and use an optical ranging device to detect the reference object and obtain its position information. This position information is then used to instruct the detection beam emitted by the optical detection device to scan only the wafer carrier area. However, as the carrier device's rotation speed increases, its jitter becomes more pronounced, resulting in more significant deviations in the optical ranging device's detection of the ranging reference object. This affects the accuracy of the detection beam emitted by the optical detection device in scanning the wafer carrier area, ultimately leading to weak or even lost fluorescence signals. Summary of the Invention

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a base processing method, a base and a semiconductor equipment process chamber, so as to reduce or avoid the influence of the shaking caused by the rotation of the bearing device on the ranging device and the inaccuracy of ranging, thereby improving the accuracy of measurement.

[0007] To achieve the above objectives, the present invention provides a base processing method, comprising:

[0008] S0: Provides a process chamber and a measuring device. The process chamber is equipped with a base, and the base is equipped with a rotary drive device. The bearing surface of the base is provided with a groove to support the substrate. The process chamber is equipped with an optical ranging device opposite to the bearing surface of the base. The measuring device is communicatively connected to the rotary drive device and the optical ranging device to measure the dimensional information of the recessed structure preset on the bearing surface of the base. The measuring device has pre-stored the opening reference information and depth reference information of the recessed structure.

[0009] S1: Control the optical ranging device to emit a ranging beam towards the bottom surface of a specific groove in the base, and control the rotation drive device to drive the base to rotate;

[0010] S2: The optical ranging device acquires ranging optical information and sends the ranging information of the specific groove to the calculation device based on the acquired ranging optical information. The calculation device calculates the jitter difference of the base based on the ranging information.

[0011] S3: The measuring device obtains the design depth based on the jitter difference and depth reference information, making the design depth greater than the jitter difference, and obtains the design opening size information based on the opening reference information;

[0012] S4: Based on the design depth and design opening size information, a recessed structure is formed in the machining area of ​​the base to serve as a distance measurement indicator mark. The machining area of ​​the base is the area other than the area where the recess is located.

[0013] Optionally, the process chamber is further equipped with a heating device, and step S1 further includes:

[0014] The process temperature is controlled within the process chamber by a heating device and is not lower than 700 degrees Celsius.

[0015] Optionally, the ranging information includes the minimum and maximum ranging values. In step S2, the step of the measuring device calculating the base vibration difference based on the ranging information includes:

[0016] The measuring device calculates the difference between the minimum and maximum distance measurements to obtain the jitter difference.

[0017] Optionally, the depth reference information includes the crack threshold and the bottom surface machining accuracy value of a specific groove. In step S3, the step of the measuring device obtaining the design depth based on the jitter difference and the depth reference information includes:

[0018] After the measuring device determines that the sum of the jitter difference and the bottom surface machining accuracy value is less than the cracking threshold, it takes the value that is greater than the sum of the jitter difference and the bottom surface machining accuracy value but less than the cracking threshold as the design depth.

[0019] Optionally, the bearing surface of the base includes a central region and a bearing area surrounding the central region, and the number of grooves is at least two, which are provided in the bearing area. In step S4, the step of forming a recessed structure in the machining area of ​​the base according to the design depth and design opening size information includes:

[0020] A recessed structure is formed in the area between adjacent grooves within the bearing area, or in the central area.

[0021] Optionally, the adjacent grooves include a first groove and a second groove, the interval between the first groove and the second groove is the first interval region, and the interval region close to the second groove and located in the bearing area is the second interval region.

[0022] Step S4 also includes:

[0023] A tangent extending from the center of the central region toward the first interval region and tangent to the first groove is defined as the first tangent, and a tangent extending from the center of the central region toward the second interval region and tangent to the second groove is defined as the second tangent. The closed area enclosed by the first tangent, the second tangent, and the edge of the central region is defined as the processing area of ​​the base.

[0024] Optionally, the adjacent grooves include a first groove and a second groove, the interval between the first groove and the second groove is the first interval region, and the interval region close to the second groove and located in the bearing area is the second interval region.

[0025] Step S4 also includes:

[0026] A tangent line extending from the center of the central region toward the first interval region and tangent to the first groove is defined as the first tangent line, and a tangent line extending from the center of the central region toward the first interval region and tangent to the second groove is defined as the third tangent line. The recessed structure is set in the closed area enclosed by the first tangent line, the third tangent line and the edge of the central region as the processing area of ​​the base.

[0027] Optionally, the edge of the central region is tangent to the edge of each groove.

[0028] Optionally, the grooves are evenly distributed around the central axis of the base. In step S4, the step of forming a recessed structure in the machining area of ​​the base according to the design depth and design opening size information includes:

[0029] At least two recessed structures are formed in the processing area, arranged around the same circumference.

[0030] Optionally, the aperture reference information includes the spot size of the ranging beam emitted by the optical ranging device. In step S3, the step of obtaining the design aperture size information based on the aperture reference information includes:

[0031] Take a value larger than the light spot size as the design aperture size information.

[0032] Optionally, in step S4, the step of forming a recessed structure in the machining area of ​​the base according to the design depth and design opening size information includes:

[0033] Starting from the top surface of the self-processing area, a portion of the base material is removed along the base axis to form a recessed structure, and the opening size of the recessed structure is larger than the bottom surface size.

[0034] The present invention also provides a base, which is obtained by the base processing method described above.

[0035] The present invention also provides a semiconductor device process chamber, comprising:

[0036] chamber body;

[0037] The base located inside the chamber body is obtained by the base processing method described above;

[0038] An optical ranging device is installed in the chamber body and is opposite to the bearing surface of the base;

[0039] An optical detection device is installed in the chamber body and is opposite to the bearing surface of the base.

[0040] Optionally, the optical ranging device includes a blue light ranging device.

[0041] Compared with the prior art, the substrate processing method, substrate, and semiconductor equipment process chamber described in this invention have at least the following beneficial effects:

[0042] The purpose of the base processing method of the present invention is to set a recessed structure in the non-groove area of ​​the bearing surface of the base as a ranging indicator mark. In order to reduce or avoid the adverse effect of the rotational jitter of the base on the ranging and positioning performed by the recessed structure, in step S1, the optical ranging device is controlled to emit a ranging beam to the bottom surface of a specific groove of the base, and the rotation drive device is controlled to drive the base to rotate. In step S2, the jitter difference of the base is obtained according to the ranging information of the specific groove. In step S3, the design depth is obtained according to the jitter difference and the pre-stored depth reference information, so that the design depth is greater than the jitter difference. The design opening size information is obtained according to the pre-stored opening reference information. Then, the recessed structure is formed in the processing area of ​​the base according to the design depth and the design opening size information.

[0043] The base in this invention is formed using the base processing method described above, and the semiconductor equipment process chamber is applied to the base processing method and includes the base described above, thus also possessing the aforementioned technical effects. Attached Figure Description

[0044] Figure 1 is a schematic diagram of the semiconductor equipment process chamber in Embodiment 1 of the present invention;

[0045] Figure 2 is a schematic diagram of the sampling trajectory of the semiconductor equipment process chamber during testing and the opening and closing of the optical detection device in Embodiment 1 of the present invention.

[0046] Figure 3 is a flowchart of the base processing method in Embodiment 2 of the present invention;

[0047] Figure 4 is a schematic diagram of the bearing surface of the base in an example of Embodiment 2 of the present invention;

[0048] Figure 5 is a schematic diagram of the bearing surface of the base in another example of Embodiment 2 of the present invention;

[0049] Figure 6 is a schematic diagram of the bearing surface of the base in another example of Embodiment 2 of the present invention;

[0050] Figure 7 is a structural schematic diagram of a sealed area marked on the bearing surface of the base in Embodiment 2 of the present invention;

[0051] Figure 8 is a schematic diagram of the structure of another sealed area marked on the bearing surface of the base in Embodiment 2 of the present invention;

[0052] Figure 9 is a schematic diagram of the marked recessed structure position on the bearing surface of the base in an example of Embodiment 2 of the present invention;

[0053] Figure 10 is a schematic diagram of the marked recessed structure position on the bearing surface of the base in another example of Embodiment 2 of the present invention;

[0054] Figure 11 is a schematic diagram of the marked recessed structure position on the bearing surface of the base in another example of Embodiment 2 of the present invention;

[0055] Figure 12 is a schematic diagram of a partial cross-sectional structure of the base in an example of Embodiment 2 of the present invention;

[0056] Figure 13 is a schematic diagram of a partial cross-sectional structure of the base in another example of Embodiment 2 of the present invention;

[0057] Figure 14 is a schematic diagram of a partial cross-sectional structure of the base in another example of Embodiment 2 of the present invention;

[0058] Figure 15 is a voltage-time curve generated by algorithm conversion based on ranging data in an example of Embodiment 2 of this utility model;

[0059] Figure 16 is a voltage-time curve generated by an algorithm based on ranging data and detection data in an example of Embodiment 2 of the present invention;

[0060] Figure 17 is a voltage-time curve generated by algorithmic conversion of ranging data and detection data in another example of Embodiment 2 of the present invention;

[0061] Figure 18 is a schematic diagram of the top feature of the ranging jump signal in Figure 14 or 15 in an example of Embodiment 2 of the present invention;

[0062] Figure 19 is a schematic diagram of the top feature of the ranging jump signal in Figure 14 or 15 in another example of Embodiment 2 of the present invention;

[0063] Figure 20 is a graph showing the relationship between the groove ranging distance and the ranging time in Embodiment 2 of the present invention.

[0064] List of reference numerals: 100 Base; 101 Central region; 1011 Sealed region; 102 Bearing region; 1021 Groove; 1021-1 First groove; 1021-2 Second groove; 1022 First interval region; 1023 Second interval region; 103 Outer region; 104, 104' Recessed structure; 1041 First opening structure; 1042 Second opening structure; 201 First tangent; 202 Second tangent; 203 Third tangent; 300 Light spot; 400 Optical ranging device; 500 Optical detection device; 600 Rotation drive device; 700 Substrate; 800 Sampling trajectory Detailed Implementation

[0065] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this application. It should be noted that, unless otherwise specified, the following embodiments and features in the embodiments can be combined with each other.

[0066] It should be understood that the illustrations provided in the embodiments of this invention are merely schematic representations of the basic concept of the invention. Although the illustrations only show components relevant to the invention and are not drawn according to the actual number, shape, and size of components in implementation, the shape, quantity, and proportion of each component can be arbitrarily changed in actual implementation, and the component layout may also be more complex. The structures, proportions, sizes, etc., shown in the accompanying drawings are only used to complement the content disclosed in the specification for those skilled in the art to understand and read, and are not intended to limit the conditions under which this application can be implemented. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportional relationships, or adjustments to the size, without affecting the effects and objectives that the invention can produce, should still fall within the scope of the technical content disclosed in this application.

[0067] Example 1

[0068] This embodiment provides a semiconductor equipment process chamber. Referring to Figures 1 and 2, the semiconductor equipment process chamber includes a base 100, an optical ranging device 400, and an optical detection device 500 disposed within the chamber body (not shown in the figures).

[0069] The base 100 has a groove 1021 on its bearing surface. The groove 1021 is used to support the substrate. The optical detection device 500 is disposed in the cavity body (not shown in the figure) and faces the bearing surface of the base 100. It emits a detection beam into the area where the groove 1021 is located and receives information from the corresponding feedback beam. Based on the received light information, the coating thickness on the substrate in the groove can be detected. In order to control the optical detection device 500 to emit a detection beam only to the substrate in the groove, a recessed structure is also provided on the non-groove area of ​​the bearing surface of the base 100 as a ranging indicator mark.

[0070] The position of the recessed structure and its relative position to the groove 1021 are determined. Then, the optical detection device 500 is controlled to emit a detection beam only towards the substrate within the groove. The optical ranging device 400 is disposed on the cavity body and faces the bearing surface of the base 100 to emit a ranging beam towards the recessed structure and receive information from the corresponding feedback beam. When the optical ranging device 400 acquires the abrupt change characteristic information of the recessed structure, it can pinpoint the position of the recessed structure. This facilitates subsequent positioning of the groove based on the location of the recessed structure, ensuring that the optical detection device 500 activates and reflects the detection beam when it is positioned relative to the corresponding groove.

[0071] Optionally, a rotary drive device 600 is further provided within the semiconductor equipment process chamber. This rotary drive device 600 is driven and connected to the base 100, and is used to drive the base 100 to rotate during operation. Optionally, a heating device is also provided within the semiconductor equipment process chamber. This heating device is used to control the process temperature within the process chamber. Optionally, the process temperature is not lower than 700°C. Optionally, a gas injection device is included within the semiconductor equipment process chamber, which is disposed opposite to the bearing surface of the base 100, and process gas is injected into the process chamber through the gas injection device.

[0072] When operating in the semiconductor equipment process chamber, substrates 700 are placed one-to-one in the grooves 1021. The base 100 rotates under the action of the drive device 600, and process gas for synthesizing thin film materials is introduced into the process chamber to deposit a thin film material layer on the substrate. Before detecting the thickness of the thin film material layer deposited on the substrate, the bearing surface of the base 100 is first measured by the optical ranging device 400. After obtaining the jump characteristic information of the recessed structure 104, the position of the recessed structure 104 is determined based on the jump characteristic information. In conjunction with the relative position of the recessed structure 104, the groove 1021, and the base 100, the information of the probe light sampling trajectory 800, and the rotation speed information, the opening and closing of the light output port of the optical detection device 500 is controlled so that the probe light is turned on only when the sampling trajectory 800 passes through the surface of the coated substrate and the corresponding specific wavelength information is obtained.

[0073] When the high-speed bearing device is in a high-temperature environment, such as above 700°C, the thermal medium in this environment (e.g., high-temperature process gas – not limited to source gas, purge gas, and carrier gas) will affect the detection light emitted by the optical ranging device 400 and / or the reflected light from the semiconductor material layer. This causes the data obtained by the optical ranging device 400 for ranging the same position on the base 100 under high-temperature and normal-temperature conditions to be different. If the ranging light emitted by the optical ranging device 400 is not properly selected, effective ranging data may not be obtained. To avoid the influence of high temperature on the ranging device, in this embodiment, a blue light ranging device is selected for the optical ranging device 400 at process temperatures above 700°C in the process chamber. This blue light ranging device emits a blue light ranging beam to the recessed structure 104 to measure the distance to the recessed structure 104, thus avoiding the influence of high temperature on the ranging accuracy and improving the accuracy of the test.

[0074] Because the height characteristics at the recessed structure 104 show a significant jump compared to the height characteristics of other surfaces on the ranging sampling trajectory, a clear voltage jump appears on the voltage-time curve output by the optical ranging device 400. This significant jump characteristic can then be used to determine the position of the recessed structure 104. However, the inventors discovered that as the rotational speed of the supporting device increases, the jitter of the supporting device becomes more pronounced, leading to a greater likelihood of significant deviations in the optical ranging device's detection of the ranging reference object. This affects the accuracy of the detection beam emitted by the optical detection device in scanning the carrier area, resulting in a weak or even lost fluorescence signal. Therefore, this embodiment uses the base processing method described in Embodiment 2 to set and process the shape and depth of the recessed structure 104 to avoid the influence of the jitter of the supporting device on the ranging, improve the ranging accuracy of the recessed structure 104, and allow the optical ranging device 400 to accurately control the precise scanning of the carrier area by accurately feeding back the position of the recessed structure 104.

[0075] Example 2

[0076] This embodiment provides a base processing method, which is mainly used to calculate the dimensional information of the recessed structure, avoid the impact of base vibration on the positioning of the recessed structure, and improve the distance measurement and positioning accuracy of the recessed structure.

[0077] Specifically, referring to Figure 3, the base processing method includes:

[0078] S0: Provides a process chamber and a measuring device. The process chamber is equipped with a base, and the base is equipped with a rotary drive device. The bearing surface of the base is provided with a groove to support the substrate. The process chamber is equipped with an optical ranging device opposite to the bearing surface of the base. The measuring device is communicatively connected to the rotary drive device and the optical ranging device to measure the dimensional information of the recessed structure preset on the bearing surface of the base. The measuring device has pre-stored the opening reference information and depth reference information of the recessed structure.

[0079] Referring to Figures 1 and 2, a process chamber is provided, which is the semiconductor equipment process chamber described in Embodiment 1. A base 100 is disposed within the process chamber. The base 100 has a groove on its bearing surface for supporting a substrate. Process gas is introduced into the process chamber to deposit a material layer on the substrate surface. A rotary drive device 600 is disposed at the bottom end of the base 100. The rotary drive device 600 is connected to the base 100 and is used to drive the base 100 to rotate during the material deposition process. An optical ranging device 400 is also disposed within the process chamber, opposite to the bearing surface of the base 100. The optical ranging device 400 is used to measure the distance from itself to the bearing surface of the base 100 to locate the recessed structure subsequently disposed on the bearing surface of the base 100. The process chamber is also equipped with an optical detection device 500 for detecting the coating thickness of the coated substrate on the bearing surface of the base 100. Subsequently, based on the recessed structure and groove, the relative position of the base 100, the sampling trajectory information of the optical detection device 500, and the rotation speed information, the opening and closing of the light output port of the optical detection device 500 is controlled so that the detection light only starts when the sampling trajectory passes through the surface of the coated substrate and acquires the corresponding specific wavelength information.

[0080] A measuring device (not shown in the figure) is provided for measuring the depth and opening size of the recessed structure provided on the base 100. Specifically, the measuring device is communicatively connected to the rotary drive device 600 and the optical rangefinder 400, and the measuring device has pre-stored opening reference information and depth reference information of the recessed structure.

[0081] Because the base 100 vibrates during rotation, this vibration affects the jump characteristic signal when the optical ranging device 400 detects and locates the recessed structure. Therefore, when designing the recessed structure, it is necessary to first test the vibration difference of the base 100 during normal operation, and design the depth of the recessed structure based on the vibration difference. In this embodiment, firstly, with the base 100 unloaded, the optical ranging device 400 emits a ranging beam to a fixed position on the bottom surface of the recess of the rotating base 100. By changing the temperature of the process chamber or the rotation speed of the base 100, different ranging information is obtained, and the vibration difference of the base 100 is calculated based on the difference in the ranging information. Steps S1 and S2 are the specific operation steps for obtaining the vibration difference.

[0082] S1: Control the optical ranging device to emit a ranging beam towards the bottom surface of a specific groove on the rotating base, and control the rotation drive device to drive the base to rotate;

[0083] Referring to Figure 1, the rotary drive device 600 drives the base 100 to rotate. During the rotation of the base 100, the heating device controls the process chamber to reach a process temperature, which is not lower than 700 degrees Celsius. Process gas is injected into the process chamber through a gas injection device. Under normal operating conditions of this process chamber, the optical ranging device 400 emits a ranging beam towards the bottom surface of the groove 1021 of the base 100. Optionally, the optical ranging device 400 emits a ranging beam in a specific direction towards the bottom surface of a specific groove 1021 of the rotating base 100, for example, a continuously emitted ranging beam or a pulsed ranging beam. It should be noted that the specific groove mentioned herein refers to any one of the various grooves 1021 on the base 100. In one embodiment, the specific groove is a groove near the area where the recessed structure is to be formed.

[0084] S2: The optical ranging device acquires ranging optical information and sends ranging information to the calculation device based on the acquired optical information. The calculation device calculates the jitter difference of the base based on the ranging information.

[0085] Referring to Figures 1 and 2, the optical ranging device 400 receives the optical information for ranging and sends the ranging information to the calculation device. The calculation device calculates the jitter difference of the base based on the ranging information. In this embodiment, the ranging information includes a maximum ranging value and a minimum ranging value. The calculation device calculates the difference between the minimum ranging value and the maximum ranging value to obtain the jitter difference.

[0086] When the substrate carrier 100 is in a high-temperature environment (e.g., above 700 degrees Celsius), hot gases (e.g., source gas, purge gas, carrier gas) will affect the detection light emitted by the optical ranging device 400 and / or the reflected light from the semiconductor material layer, causing deviations in the distance data obtained by the optical ranging device 400 at the same location on the substrate carrier 100 under different temperatures. Structural factors such as the backlash of the reducer of the rotating motor and the stability of the connection between the support shaft and the carrier will inevitably cause vibration of the high-speed rotating substrate carrier 100. Therefore, it is necessary to conduct distance measurement tests on the substrate carrier 100 under process temperature and speed conditions using the optical ranging device 400 to examine the influence of process temperature and speed on distance measurement, providing a design basis for setting the minimum depth of the recessed structure 104.

[0087] Specifically, the substrate carrier 100 is a graphite disk covered with a silicon carbide coating, and the optical ranging device 400 is a blue light rangefinder. The chamber temperature is set to different temperatures. Once the chamber temperature meets the requirements, the ranging light from the optical ranging device 400 is directed to be emitted perpendicularly to the bottom of a groove. Then, the graphite disk is rotated at a certain speed. The optical ranging device 400 (blue light rangefinder) acquires the ranging light and feeds the ranging data back to the host computer. The host computer filters the ranging data of the groove based on the rotation motor data and the ranging data, obtaining, for example, the distance-time relationship graph shown in Figure 20 (the graphite disk rotates at 900 rpm at room temperature). The graph shows that the ranging value changes at high speeds. The specific implementation method of the host computer filtering the ranging data of the groove based on the rotation motor data and the ranging data is a conventional technique in this field and will not be elaborated here.

[0088] The graphite disk is rotated under the temperature of each chamber. The groove is positioned with the assistance of the rotating motor signal. The maximum and minimum distance values ​​of the same position of a specific groove on the same graphite disk under different conditions are obtained by a blue light rangefinder. The difference between the maximum and minimum distance values ​​is the jitter difference. The data are shown in Table 1 and Table 2 below.

[0089] Table 1

[0090] Table 2

[0091] As can be seen from Tables 1 and 2, the effects of temperature and rotation speed on the jitter of the substrate carrier 100 are not negligible, and the depth of the recessed structure 104 needs to be greater than the jitter difference. During the process, since the substrate 700 is placed in the groove 1021, if the depth of the recessed structure 104 is less than or equal to the jitter difference during the rotation of the substrate carrier 100, the jitter of the substrate carrier 100 will cause the distance measurement data of the recessed structure 104 to be basically consistent with or too small in difference from the distance measurement data of the semiconductor material layer deposited on the substrate 700, making the jump signal of the recessed structure 104 insignificant.

[0092] S3: The measuring device obtains the design depth based on the jitter difference and depth reference information, and obtains the design opening size information based on the opening reference information;

[0093] Referring to Figure 4, the bearing surface of the base 100 includes a central region 101, a bearing region 102 surrounding the central region 101, and a peripheral region 103 surrounding the bearing region 102. A groove 1021 is provided within the bearing region 102.

[0094] The uneven structure of the bottom surface of the groove 1021 can also cause fluctuations in the ranging value. This influencing factor needs to be considered along with the fluctuation difference when designing the depth of the recessed structure 104. The depth of the recessed structure 104 cannot be too deep or penetrate the graphite disk; otherwise, it is easy to cause the graphite disk to crack or there is a risk of cracking during processing. The processing accuracy of the bottom surface of the groove 1021 used for ranging also has a certain impact on the ranging of the optical ranging device 400. Therefore, the design depth of the recessed structure 104 is jointly determined by the fluctuation difference of the base, the cracking threshold, and the processing accuracy of the bottom surface of the specific groove 1021. The depth reference information in this embodiment includes the aforementioned cracking threshold and the processing accuracy of the bottom surface of the specific groove 1021.

[0095] In this embodiment, when determining the design depth of the recessed structure 104, the measuring device judges whether the sum of the jitter difference and the bottom surface machining accuracy is less than the crack threshold. If it is determined that it is less than the crack threshold, the value that is greater than the sum of the jitter difference and the bottom surface machining accuracy, and less than the crack threshold, is taken as the design depth. Optionally, the machining accuracy value of the bottom surface of the groove 1021 is the absolute value of the maximum machining error value of the bottom surface height of the groove 1021. Optionally, the machining accuracy value of the bottom surface of the groove 1021 is the absolute value of the average machining error value of the bottom surface height of the groove 1021.

[0096] In some embodiments, the difference in vibration of the substrate carrier 100 at the process temperature (1000 degrees Celsius) and rotation speed (1000 rpm) is 0.3 mm, and the absolute value of the maximum processing error of the height at various points on the bottom surface of the groove 1021 is 0.5 mm, then the depth of the recessed structure 104 is greater than 0.8 mm.

[0097] In some embodiments, the depth h of the recessed structure 104 is greater than or equal to 1 mm.

[0098] In some embodiments, the depth of the recessed structure 104 does not exceed the crack threshold. For example, when the substrate carrier 100 is made of coated graphite, such as silicon carbide coated graphite, creating a recessed structure 104 on such a carrier beyond a certain depth will cause cracks in the substrate carrier 100. Because graphite has poor wear resistance, it easily produces graphite powder, which can contaminate the substrate 700 or the semiconductor material layer deposited on it. Furthermore, the repeated heating and cooling processes and pressure changes during the process can cause thermal stress on such a carrier, leading to fatigue damage and failure. Therefore, it is necessary to control the depth of the recessed structure 104 to not exceed the crack threshold. The specific crack threshold value is an empirical value, determined by the material and shape of the substrate carrier 100, the thickness of the portion supporting the substrate 700, the opening size of the recessed structure 104, and the temperature and pressure of the deposition process.

[0099] In some embodiments, the crack threshold of the recessed structure 104 is taken as the depth of the groove 1021.

[0100] The design aperture size information is obtained based on the aperture reference information. The aperture reference information includes the spot size of the ranging beam emitted by the optical ranging device, and a value larger than the spot size is taken as the design aperture size signal.

[0101] Specifically, the opening size of the recessed structure 104 is configured to allow the light beam emitted by the optical rangefinder 400 to pass through. Referring to FIG12, its radial dimension d ensures that the light spot 300 emitted by the optical rangefinder 400 can be accommodated. The recessed structure 104 is recessed from the surface of the substrate carrier 100 into the interior of the substrate carrier 100.

[0102] In some embodiments, referring to FIG12, the opening size of the recessed structure 104 is equal to the size of its bottom surface. For example, the recessed structure 104 may be cylindrical.

[0103] As shown in Figures 1 and 2, during the rotation of the substrate carrier 100, the optical ranging device 400 remains fixed relative to the carrier surface of the substrate carrier 100, continuously emitting ranging light in a fixed direction towards the carrier surface of the substrate carrier 100. At this time, the optical ranging device 400 only receives ranging light information and feeds back the light information to the optical detection device 500 or the main control device of the optical detection device 500 (not shown in the figure). The optical detection device 500 or the main control device of the optical detection device 500 (not shown in the figure) converts the light information into voltage-time relationship data, which is then processed by a noise reduction algorithm and a fitting algorithm to form the ranging jump signal shown in Figure 13. Continuing the process, the optical ranging device 400 continuously provides ranging light. The optical detection device 500 or the main control device controlling the optical detection device 500 receives ranging light information from the optical ranging device 400. The optical detection device 500 or the main control device controlling the optical detection device 500 (not shown in the figure) determines the position of the recessed structure 104 based on the trigger information formed by the ranging jump signal. Based on the position information of each groove 1021 relative to the recessed structure 104, the size information of each groove 1021, and the rotation speed, the detection light emitted by the optical detection device 500 is controlled to scan only the surface of the groove 1021 (i.e., "detection light ON" as shown in Figure 12). In the non-groove area, the probe light is turned off (i.e., the "probe light OFF" area shown in Figure 12). The optical detection device 500 or the main control device controlling the optical detection device 500 receives the detection information from the optical detection device 500. After noise reduction and fitting algorithms, the resulting test jump signal and ranging jump signal are shown in Figure 14 or 15. The difference between Figure 14 and Figure 15 is that the position of the recessed structure 104 relative to the groove 1021 is different. The resulting test jump signal and ranging jump signal may overlap or not overlap depending on the relative position of the recessed structure 104 and the groove 1021. It should be noted that the optical detection device 500 or the main control device of the optical detection device 500 determines the time to turn the probe light on or off based on the position information of each groove 1021 relative to the recessed structure 104, the size information of each groove 1021, and the rotation speed. The specific implementation method is a conventional technical means. The optical inspection device 500 or the main control device controlling the optical inspection device 500 will further select, based on the graphic information shown in Figure 14 or 15, an integral algorithm to obtain the thickness of the semiconductor material layer by scanning the graphic region.

[0104] The more complex the known noise reduction and fitting algorithms are, the greater the error they introduce. Therefore, the opening shape of the recessed structure 104 is further optimized, and the longitudinal section shape of the recessed structure 104 is adjusted so that the jump signal characteristics generated by scanning it can be significantly distinguished from the jump signal characteristics generated by scanning the semiconductor material layer on the substrate, thereby reducing the difficulty of the algorithm.

[0105] For example, in this embodiment, the shape of the recessed structure 104 is further configured such that the opening size of the recessed structure 104 is larger than the bottom size, so that the undulation of the inner wall of the recessed structure 104 scanned is significantly different from the undulation of the surface of the semiconductor material layer scanned. In some embodiments, the opening size of each radial section of the recessed structure 104 along its recess direction is non-uniform.

[0106] In one example, referring to FIG13, the recessed structure 104 includes a top and a bottom along the recessed direction, and the opening size of the top of the recessed structure 104 is larger than the opening size of the bottom. The recessed structure 104 may be provided with two opening structures, including a first opening structure 1041 and a second opening structure 1042 sequentially along the recessed direction, and the opening size of the first opening structure 1041 is larger than the opening size of the second opening structure 1042. The optical ranging device 400 scans the jump signal characteristics formed by this structure, and its top characteristics are shown in FIG18, which can be significantly distinguished from the top characteristics of the test jump signals shown in FIG16 and FIG17.

[0107] In another example, referring to FIG14, the opening size of each radial section of the recessed structure 104 along the recess direction can also be set to gradually decrease. As shown in FIG14, the cross-section of the recessed structure 104 is semi-circular. The optical ranging device 400 scans the jump signal characteristics formed by the structure. Its top feature is shown in FIG19, which can also be significantly distinguished from the top feature of the test jump signal shown in FIG16 and FIG17.

[0108] The depth of the recessed structure 104 cannot be too deep or penetrate the graphite disk, otherwise it is easy to cause the graphite disk to crack or there is a risk of cracking during processing. The depth of the recessed structure 104 cannot be too shallow, otherwise the transition signal will be insignificant due to the insignificant height difference, affecting the control effect. If the depth of the recessed structure 104 is too low, even if the structure is designed as shown in Figures 13 and 14, the recessed structure 104 is easily blocked and filled during the deposition process, making it more difficult to distinguish its transition signal from the transition signal formed by the semiconductor material layer, and increasing the complexity of the corresponding algorithm.

[0109] S4: Based on the design depth and design opening size information, a recessed structure is formed in the machining area of ​​the base to serve as a distance measurement indicator mark. The machining area of ​​the base is the area other than the area where the recess is located.

[0110] Based on step S3, after determining the design depth and design opening size information of the recessed structure, a recessed structure is formed in the processing area of ​​the bearing surface of the base to serve as a distance measurement indicator. The processing area of ​​the base includes all areas except the area where the groove is located. In this embodiment, there are at least two grooves 1021, located in the bearing area. Referring to Figure 4, a recessed structure 104 is formed in the area between adjacent grooves 1021 within the bearing area; referring to Figure 6, a recessed structure 104 is formed in the central region 101; referring to Figure 5, a recessed structure 104 is formed in the edge region 103.

[0111] Referring to Figure 1, when the substrate carrier 100 rotates under the action of the driving device 600, it inevitably causes the substrate carrier 100 to vibrate (e.g., swaying radially along the substrate carrier 100). This vibration effect becomes more significant with increasing rotational speed, and its impact on the edge region of the substrate carrier 100 is much greater than its impact on the inner region. Therefore, by placing the recessed structure 104 in the central region 101 or in the interval region between adjacent recesses 1021, the adverse effects on the accuracy of ranging data caused by the rotational vibration of the substrate carrier can be reduced or avoided. Furthermore, in this embodiment, as shown in Figure 4, the recessed structure 104 is placed in the interval region between adjacent recesses 1021. Alternatively, it is placed in the central region 101, as shown in Figure 6.

[0112] Since the transition signal of the concave structure 104 needs to be processed by noise reduction and fitting algorithms, the more complex the algorithm, the greater the error introduced. Therefore, further optimizing the location of the concave structure 104 to avoid excessive overlap between its ranging transition signal and the test transition signal helps to reduce the requirements for algorithm complexity and reduce algorithm error.

[0113] Specifically, referring to FIG7, two adjacent grooves 1021 are respectively the first groove 1021-1 and the second groove 1021-2, and the interval region between the first groove 1021-1 and the second groove 1021-2 is the first interval region 1022. Referring to FIG4, the interval region close to the second groove 1021-2 and adjacent to the first interval region 1022 is the second interval region 1023. Referring to FIG7, a tangent line extending from the center of the central region 101 toward the first interval region 1022 and tangent to the first groove 1021-1 is defined as the first tangent line 201, and a tangent line extending from the center of the central region 101 toward the second interval region 1023 and tangent to the second groove 1021-2 is defined as the second tangent line 202. Referring to FIG8, a tangent line extending from the center of the central region 101 toward the second interval region 1023 and tangent to the second groove 1021-2 is defined as the third tangent line 203.

[0114] In one example, as shown in Figure 7, the recessed structure 104 is disposed within the enclosed region 1011 enclosed by the first tangent 201, the second tangent 202, and the edge of the central region 101. The edge of the recessed structure 104 is located within the enclosed region 1011 and is not simultaneously tangent to the first tangent 201 and the second tangent 202 of the enclosed region 1011, or as shown in Figure 9, the recessed structure 104' is simultaneously tangent to both the first tangent 201 and the second tangent 202. During the process, the time period during which the optical ranging device 400 scans the recessed structure (range jump signal) and the time period during which the optical detection device 500 scans the nearby groove 1021 (test jump signal) do not overlap, as shown in Figure 16; or they only overlap at the start and end times, with fewer repeated time periods, further reducing the complexity requirements of the algorithm, thereby reducing algorithm errors and improving test accuracy.

[0115] In one example, as shown in Figure 8, the recessed structure 104 is disposed within the enclosed region 1011 enclosed by the first tangent 201, the third tangent 203, and the edge of the central region 101. The time period during which the optical ranging device 400 scans the recessed structure (not shown in the figure) only overlaps with the time period during which the optical detection device 500 scans a groove 1021-2. This reduces the complexity of the algorithm, thereby decreasing algorithm error and improving test accuracy.

[0116] In one example, as shown in Figure 10, one of the recessed structures 104' intersects only the first tangent 201, and the other recessed structure 104' is tangent only to the second tangent 202. Since the recessed structure 104' intersects only with either the first tangent 201 or the second tangent 202, in this case, the time period during which the optical ranging device 400 scans the recessed structure only partially overlaps with the time period during which the optical detection device 500 scans the nearby groove, and the algorithm complexity requirement is not high. As shown in Figure 11, the recessed structure 104' intersects both the first tangent 201 and the second tangent 202. In this case, because the recessed structure 104' is too close to the center and has a greater overlap with the time period of the recess, the algorithm complexity requirement is relatively high.

[0117] The number of recessed structures 104 can be one or at least two. When the rotation speed of the substrate carrier 100 is too fast and the sampling speed of the optical rangefinder 400 is difficult to match, the position of the recessed structure 104 can be determined by increasing the number of recessed structures 104.

[0118] In some embodiments, the number of recessed structures 104 is at least two, arranged around the same circumference. The grooves 1021 on the substrate carrier 100 are evenly distributed. This allows the sampling signals from other recessed structures 104 to replace the sampling signal of the first recessed structure 104 for the aforementioned voltage-time pattern determination when the sampling of the first recessed structure 104 is difficult to match, resulting in an insignificant or even lost transition signal. In some more specific embodiments, the recessed structures 104 are further positioned on the same circumference centered on the center of the carrier surface and on the same diameter. In some more specific embodiments, the two recessed structures 104 can be spaced 180° apart, or the three recessed structures 104 can be spaced 120° apart, or the four recessed structures 104 can be spaced 90° apart.

[0119] Example 3

[0120] This embodiment provides a base formed by the base processing method described in Embodiment 2 above. Since the base is formed by the aforementioned base processing method, it also possesses the technical effects of the base processing method described in Embodiment 2.

[0121] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A method of processing a susceptor, the method comprising: include: S0: A process chamber and a measuring device are provided. A base is provided in the process chamber. A rotary drive device is provided on the base. A groove is provided on the bearing surface of the base to support the substrate. An optical ranging device is provided in the process chamber opposite to the bearing surface of the base. The measuring device is communicatively connected to the rotary drive device and the optical ranging device to measure the size information of the recessed structure preset on the bearing surface of the base. The measuring device stores the opening reference information and depth reference information of the recessed structure. S1: Control the optical ranging device to emit a ranging beam toward the bottom surface of a specific groove on the base, and control the rotation drive device to drive the base to rotate, wherein the specific groove is one of the grooves on the base; S2: The optical ranging device acquires ranging optical information and sends the ranging information of the specific groove to the calculation device based on the acquired ranging optical information. The calculation device calculates the jitter difference of the base based on the ranging information. S3: The measuring device obtains the design depth based on the jitter difference and the depth reference information, making the design depth greater than the jitter difference, and obtains the design opening size information based on the opening reference information; S4: Based on the design depth and the design opening size information, the recessed structure is formed in the processing area of ​​the base to serve as a distance measuring indicator mark. The processing area of ​​the base is the area other than the area where the groove is located.

2. The method of claim 1, wherein The process chamber is also equipped with a heating device, and step S1 further includes: The heating device controls the process chamber to reach the process temperature, which is not lower than 700 degrees Celsius.

3. The method of claim 1, wherein The ranging information includes a minimum ranging value and a maximum ranging value. In step S2, the calculation device calculates the jitter difference of the base based on the ranging information, including: The measuring device calculates the difference between the minimum and maximum distance values ​​to obtain the jitter difference.

4. The method of claim 3, wherein The depth reference information includes the crack threshold and the bottom surface machining accuracy value of the specific groove. In step S3, the step of the measuring device obtaining the design depth based on the jitter difference and the depth reference information includes: After the measuring device determines that the sum of the jitter difference and the bottom surface machining accuracy value is less than the crack threshold, it takes the value that is greater than the sum of the jitter difference and the bottom surface machining accuracy value and less than the crack threshold as the design depth.

5. The method of claim 1, wherein The bearing surface of the base includes a central region and a bearing area surrounding the central region. The number of grooves is at least two and they are located within the bearing area. In step S4, the step of forming a recessed structure in the machining area of ​​the base according to the design depth and the design opening size information includes: The recessed structure is formed in the region between adjacent grooves within the bearing area, or in the central region.

6. The method of claim 5, wherein The adjacent grooves include a first groove and a second groove, the interval between the first groove and the second groove is a first interval region, and the interval region close to the second groove and located in the bearing area is a second interval region; Step S4 also includes: A first tangent is defined as a tangent extending from the center of the central region toward the first interval region and tangent to the first groove, and a second tangent is defined as a tangent extending from the center of the central region toward the second interval region and tangent to the second groove. The enclosed area enclosed by the first tangent, the second tangent, and the edge of the central region is defined as the processing area of ​​the base.

7. The method of claim 5, wherein The adjacent grooves include a first groove and a second groove, the interval between the first groove and the second groove is a first interval region, and the interval region close to the second groove and located in the bearing area is a second interval region; Step S4 also includes: A first tangent is defined as a tangent extending from the center of the central region toward the first interval region and tangent to the first groove, and a third tangent is defined as a tangent extending from the center of the central region toward the first interval region and tangent to the second groove. The recessed structure is disposed in the closed area enclosed by the first tangent, the third tangent, and the edge of the central region as the processing area of ​​the base.

8. The susceptor processing method of claim 6 or 7, wherein, The edge of the central region is tangent to the edge of each of the grooves.

9. The method of claim 5, wherein, The grooves are evenly distributed around the central axis of the base. In step S4, the step of forming a recessed structure in the machining area of ​​the base according to the design depth and the design opening size information includes: At least two recessed structures are formed in the processing area, arranged around the same circumference.

10. The method of claim 1, wherein The aperture reference information includes the spot size of the ranging beam emitted by the optical ranging device. In step S3, the step of obtaining the design aperture size information based on the aperture reference information includes: A value larger than the light spot size is taken as the design opening size information.

11. The method of claim 1, wherein In step S4, the step of forming a recessed structure in the machining area of ​​the base according to the design depth and the design opening size information includes: Starting from the top surface of the processing area, a portion of the material of the base is removed along the axial direction of the base to form the recessed structure, and the opening size of the recessed structure is larger than the bottom surface size.

12. A susceptor, characterized by, It is obtained by the base processing method according to any one of claims 1-11.

13. A semiconductor equipment process chamber, characterized by, include: chamber body; The base disposed within the cavity body is obtained by the base processing method according to any one of claims 1 to 11; An optical ranging device is disposed in the cavity body and opposite to the bearing surface of the base; An optical detection device is disposed in the chamber body and is opposite to the bearing surface of the base.

14. The semiconductor equipment process chamber of claim 13, wherein, The optical ranging device includes a blue light ranging device.

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