Plasma source assembly and substrate processing device

Abstract

A plasma source assembly according to an aspect of the present invention comprises: a gas discharge plate having a plurality of gas discharge holes formed therein; and a plasma source coupled via an insulating member interposed on the gas discharge plate to supply activated process gas to the gas discharge plate. The plasma source may comprise: a reaction body including a plurality of body parts and a plurality of insulating parts, and forming a toroidal channel in the plurality of body parts; a plurality of magnetic cores disposed to be spaced apart from each other along the toroidal channel; a plurality of windings disposed to wind the plurality of magnetic cores; an ignition auxiliary part for inducing an electric field for assisting plasma ignition in the reaction body; and a control part for controlling ignition of plasma in the toroidal channel.

Description

Plasma source assembly and substrate processing device

[0001] The present invention relates to a semiconductor manufacturing apparatus, and more specifically, to a plasma source, a plasma source assembly, and a substrate processing apparatus using the same.

[0002] In a substrate processing apparatus for forming semiconductor devices, an apparatus and process are being studied in which activated reactants, such as radicals, are supplied into the process chamber using a plasma source assembly located outside the process chamber, such as a remote plasma generator, rather than directly forming plasma within the process chamber. By using a remote plasma generator in this manner, desired reactants can be generated and supplied to the process chamber, and since direct plasma formation within the process chamber is avoided, plasma damage to the substrate can be prevented.

[0003] Furthermore, in order to reduce the path of radicals generated from a remote plasma generator being supplied onto a substrate, a structure is being studied in which a plasma source assembly is coupled to a gas injection part of a process chamber. According to this structure, the process efficiency can be increased by increasing the activity ratio of radicals supplied from the plasma source assembly onto the substrate.

[0004] However, the aforementioned remote plasma generator or plasma source assembly is designed to use power under limited conditions, which leads to a problem where plasma ignition failure occurs frequently.

[0005] The present invention aims to solve the aforementioned problems, and one technical objective according to the present invention is to provide a plasma source, a plasma source assembly, and a substrate processing apparatus using the same that can increase the plasma ignition success rate.

[0006] However, these tasks are exemplary and do not limit the scope of the invention.

[0007] A plasma source assembly according to one aspect of the present invention for solving a technical problem according to the present invention comprises a gas discharge plate having a plurality of gas discharge holes formed therein, and a plasma source coupled to the gas discharge plate with an insulating member interposed therein to supply an activated process gas to the gas discharge plate. The plasma source may include a reaction body comprising a plurality of body parts each having gas diffusion spaces formed therein and a plurality of insulating parts coupled so that the gas diffusion spaces are in communication with each other between the plurality of body parts, wherein the gas diffusion spaces within the plurality of body parts collectively form a toroidal channel; a plurality of magnetic cores spaced apart from each other along the toroidal channel while surrounding each of the plurality of body parts; a plurality of windings arranged to wind the plurality of magnetic cores and inducing magnetic force within the plurality of magnetic cores through power supplied from a power source; an ignition assisting part that applies power to at least some of the plurality of body parts to induce an electric field to assist plasma ignition within the reaction body; and a control part that controls the ignition of plasma within the toroidal channel by applying an ignition voltage to at least one of the plurality of windings after inducing an electric field within the reaction body through the ignition assisting part.

[0008] According to the above plasma source assembly, the ignition assist unit applies power between body parts disposed on both sides of at least one insulating part among the plurality of body parts to induce an electric field in at least one insulating part among the plurality of insulating parts, and the control unit can control the ignition of the plasma in the toroidal channel by applying an ignition voltage to at least one of the plurality of windings after inducing an electric field within the at least one insulating part by applying power between body parts disposed on both sides of the at least one insulating part through the ignition assist unit.

[0009] According to the above plasma source assembly, the ignition assist unit applies power between at least one of the plurality of body units and the gas discharge plate, and the control unit can control the ignition of the plasma in the toroidal channel by applying power between the at least one body unit and the gas discharge plate through the ignition assist unit to induce an electric field, and then applying an ignition voltage to at least one of the plurality of windings.

[0010] According to the above plasma source assembly, the ignition auxiliary part may be electrically connected between at least one of the plurality of body parts and the gas discharge plate.

[0011] According to the above plasma source assembly, the gas exhaust plate is coupled to the process chamber of a substrate processing device, the gas exhaust plate is grounded through the process chamber, and the ignition auxiliary part can be electrically connected between at least one of the plurality of body parts and the process chamber.

[0012] According to the plasma source assembly, the plasma source includes a plurality of switches each connected between the ends of two adjacent body parts so that the plurality of body parts are electrically connected or electrically disconnected by bypassing the plurality of insulating parts, and the control unit can control at least one of the plurality of switches to a turn-on state before applying an ignition voltage to at least one of the plurality of windings during plasma ignition in the toroidal channel.

[0013] According to the above plasma source assembly, the ignition assist unit applies power to body parts positioned on both sides of the first insulating part among the plurality of body parts to induce an electric field in the first insulating part among the plurality of insulating parts, and among the plurality of switches, the first switch for electrically bypassing the first insulating part is turned off and the remaining switches are turned on, and the control unit can control the ignition of the plasma in the toroidal channel by applying an ignition voltage to at least one of the plurality of windings after inducing an electric field in the first insulating part through the ignition assist unit.

[0014] According to the above plasma source assembly, the ignition assist unit applies power between at least one of the plurality of body units and the gas discharge plate, and the control unit induces an electric field by applying power between the at least one of the body units and the gas discharge plate through the ignition assist unit, and after controlling at least one of the plurality of switches to a turn-on state, can control the ignition of the plasma in the toroidal channel by applying an ignition voltage to at least one of the plurality of windings.

[0015] A substrate processing device according to another aspect of the present invention for solving one technical problem according to the present invention may include a process chamber having a reaction space formed therein, a substrate support member coupled to the lower part of the process chamber to support a substrate within the reaction space, a plasma source assembly coupled to the upper part of the process chamber, and a gas injection member having a gas injection plate formed opposite to the substrate support member and disposed below the plasma source assembly to inject a process gas activated by the plasma source assembly onto the substrate support member.

[0016] According to the above substrate processing device, the process chamber includes a body portion with an upper opening and a top lead coupled to the body portion, and the gas injection plate of the plasma source assembly can be coupled to the top lead.

[0017] According to some embodiments of the present invention as described above, the plasma source assembly and substrate processing apparatus can increase the plasma ignition success rate by inducing an electric field within the reaction body and then applying an ignition voltage to the windings. Of course, the scope of the present invention is not limited by this effect.

[0018] FIG. 1 is a schematic diagram showing a plasma source according to one embodiment of the present invention.

[0019] Figure 2 is a schematic perspective view showing the plasma source of Figure 1.

[0020] Figure 3 is a schematic diagram showing power transfer from the plasma source of Figure 1.

[0021] FIGS. 4 to 6 are schematic cross-sectional views showing a plasma source assembly according to some embodiments of the present invention.

[0022] FIGS. 7 to 12 are schematic cross-sectional views partially showing a plasma source assembly according to some embodiments of the present invention.

[0023] FIG. 13 is a schematic cross-sectional view showing substrate processing apparatus according to some embodiments of the present invention.

[0024] Hereinafter, several preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0025] The embodiments of the present invention are provided to more fully explain the invention to those skilled in the art, and the following embodiments may be modified in various different forms, and the scope of the invention is not limited to the following embodiments. Rather, these embodiments are provided to make the disclosure more faithful and complete and to fully convey the spirit of the invention to those skilled in the art.

[0026] In addition, the thickness or size of each layer in the drawings is exaggerated for convenience and clarity of explanation. Furthermore, embodiments of the concept of the present invention should not be interpreted as being limited to specific shapes of the areas depicted in this specification, and should include, for example, variations in shape resulting from manufacturing.

[0027] FIG. 1 is a schematic diagram showing a plasma source (200) according to one embodiment of the present invention, FIG. 2 is a schematic perspective view showing the plasma source (200) of FIG. 1, and FIG. 3 is a schematic diagram showing power transfer in the plasma source (200) of FIG. 1.

[0028] Referring to FIGS. 1 to 3, the plasma source (200) may include a reaction body (210), a plurality of magnetic cores (220a, 220b, 220c), and a plurality of windings (224a, 224b, 224c).

[0029] The reaction body (210) may include a plurality of body portions (212a, 212b, 212c) and a plurality of insulating portions (216a, 216b, 216c). Gas diffusion spaces (214a, 214b, 214c) may each be formed within the body portions (212a, 212b, 212c). More specifically, the body portion (212a) may have a gas diffusion space (214a) formed within it, the body portion (212b) may have a gas diffusion space (214b) formed within it, and the body portion (212c) may have a gas diffusion space (214c) formed within it. The cross-sectional shape of the gas diffusion spaces (214a, 214b, 214c) may have various shapes, such as a circle, an ellipse, or a polygon.

[0030] In some embodiments, the body portions (212a, 212b, 212c) may be formed by coating an insulating material onto a conductive material. For example, the body portions (212a, 212b, 212c) may be formed by coating an insulating material, such as a metal oxide, a metal nitride, etc., onto a metal.

[0031] Insulating parts (216a, 216b, 216c) may be joined between body parts (212a, 212b, 212c). Insulating parts (216a, 216b, 216c) may be interposed between the body parts (212a, 212b, 212c) so that they are spaced apart from each other and are not directly electrically connected. For example, the insulating parts (216a, 216b, 216c) may have a flow path formed therein so that gas diffusion spaces (214a, 214b, 214c) within the body parts (212a, 212b, 212c) communicate with each other. The insulating parts (216a, 216b, 216c) may be formed of a suitable insulating material, such as an oxide, a nitride, a polymer resin, etc. Optionally, the insulating parts (216a, 216b, 216c) may be referred to as the first insulating part (216a), the second insulating part (216b), and the third insulating part (216c) for convenience.

[0032] In some embodiments, in the reaction body (210), gas diffusion spaces (214a, 214b, 214c) may form the toroidal channel (214) as a whole. More specifically, the body portions (212a, 212b, 212c) may be formed to correspond to structures that divide the overall shape of the toroidal channel (214) so ​​as to define the toroidal channel (214) as a whole. For example, if the toroidal channel (214) is formed as a donut shape as a whole, the body portions (212a, 212b, 212c) may be formed to correspond to structures that divide this donut shape into multiple parts.

[0033] In some embodiments, the reaction body (210) may be formed with a gas inlet (2123) for introducing gas into a toroidal channel (214) and an opening (2124) for discharging gas.

[0034] Magnetic cores (220a, 220b, 220c) may be spaced apart from each other along the toroidal channel (214) while each surrounding the reaction body (210). For example, magnetic cores (220a, 220b, 220c) may each surround the body portions (212a, 212b, 212c). More specifically, magnetic core (220a) may be positioned to surround the outer surface of the body portion (212a), magnetic core (220b) may be positioned to surround the outer surface of the body portion (212b), and magnetic core (220c) may be positioned to surround the outer surface of the body portion (212c). For example, the magnetic cores (220a, 220b, 220c) may include a magnetic material, such as a ferrite material.

[0035] In some embodiments, each of the magnetic cores (220a, 220b, 220c) may be formed as a single closed structure or may have a structure in which a plurality of divided parts are combined.

[0036] The windings (224a, 224b, 224c) may be arranged to wind magnetic cores (220a, 220b, 220c). For example, the winding (224a) may be arranged to wind the magnetic core (220a), the winding (224b) may be arranged to wind the magnetic core (220b), and the winding (224c) may be arranged to wind the magnetic core (220c).

[0037] The windings (224a, 224b, 224c) can induce a magnetic force within the magnetic cores (220a, 220b, 220c) through power supplied from the power supply unit (230). For example, when the windings (224a, 224b, 224c) are wound in the width direction of the magnetic cores (220a, 220b, 220c), when power is applied to the windings (224a, 224b, 224c), a magnetic force can be induced along the circumferential direction within the magnetic cores (220a, 220b, 220c).

[0038] The power supply unit (230) may include a power supply device and may supply RF power to windings (224a, 224b, 224c) through a resonant circuit unit, etc. (not shown). For example, the power supply unit (230) may include a switching mode power supply (SMPS). Furthermore, the power supply unit (230) may include a full bridge or half bridge switching circuit for DC-AC conversion. The resonant circuit may include an LCC, etc.

[0039] In the plasma source (200), the number of body parts (212a, 212b, 212c) is illustrated by example and can be selected as two or more. Furthermore, depending on the number of body parts (212a, 212b, 212c), the number of magnetic cores (220a, 220b, 220c), windings (224a, 224b, 224c), and insulating parts (216a, 216b, 216c) may be varied.

[0040] In some embodiments, the body portions (212a, 212b, 212c) may each include first body portions (2121a, 2121b, 2121c) and second body portions (2122a, 2122b, 2122c). For example, the body portion (212a) may include a first body portion (2121a) and a second body portion (2122a) joined together, the body portion (212b) may include a first body portion (2121b) and a second body portion (2122b) joined together, and the body portion (212c) may include a first body portion (2121c) and a second body portion (2122c) joined together.

[0041] For example, the first body parts (2121a, 2121b, 2121c) may have a first length and a second width, and the second body parts (2122a, 2122b, 2122c) may have a second length and a second width. The first length may be greater than the second length, and the first width may be greater than the second width. For example, the first length may be at least three times greater than the second length, and the first width may be 1.1 to 1.4 times greater than the second width. Here, length refers to the circumferential length of the first body parts (2121a, 2121b, 2121c) or the second body parts (2122a, 2122b, 2122c), e.g., the length of an arc, and width may refer to the cross-sectional length of the first body parts (2121a, 2121b, 2121c) or the second body parts (2122a, 2122b, 2122c), e.g., the diameter.

[0042] Flanges (2126, 2127) may be formed on both ends of the second body parts (2122a, 2122b, 2122c). For example, one side of each of the first body parts (2121a, 2121b, 2121c) may be connected to the flanges (2127) on one side of the second body parts (2122a, 2122b, 2122c), and insulating parts (216a, 216b, 216c) may be connected to the flanges (2126) on the other side of the second body parts (2122a, 2122b, 2122c) and the other side of the first body parts (2121a, 2121b, 2121c). The magnetic cores (220a, 220b, 220c) may be arranged to surround the second body parts (2122a, 2122b, 2122c).

[0043] In some embodiments, additional flanges (not shown) may also be added between the insulating portions (216a, 216b, 216c) and the first body portions (2121a, 2121b, 2121c).

[0044] In some embodiments, at least one gas inlet (2123) is formed on the upper surface (A1) of the first body parts (2121a, 2121b, 2121c), and at least one opening (2124) may be formed on the lower surface (A2) of the first body parts (2121a, 2121b, 2121c). Gas introduced into the toroidal channel (214) through the gas inlet (2123) can be activated by plasma and discharged to the lower part of the plasma source (200) through the opening (2124). For example, the opening (2124) may be formed in the shape of a slit.

[0045] In some embodiments, the gas inlet (2123) may be formed on the side of the first body parts (2121a, 2121b, 2121c).

[0046] In some embodiments, an inlet (H1) for the inflow of a cooling medium and a cooling outlet (H2) for the outflow of a cooling medium may be formed within at least a portion of each of the body parts (212a, 212b, 212c). A cooling line (not shown) connected to the cooling inlet (H1) and the cooling outlet (H2) may be formed inside the body parts (212a, 212b, 212c). The cooling medium may be circulated through the cooling lines, thereby cooling the reaction body (210). For example, the cooling medium may include cooling water.

[0047] According to the plasma source (200), when power is applied from the power supply unit (230) to the windings (224a, 224b, 224c), a magnetic force is induced in the magnetic cores (220a, 220b, 220c), and by this induced magnetic force, a current can be induced in the toroidal channel (214) penetrating the interior of the magnetic cores (220a, 220b, 220c). By this current, a gas within the toroidal channel (214) can be activated to form a plasma atmosphere.

[0048] In a plasma source (200), a structure in which a magnetic force is induced in the magnetic cores (220a, 220b, 220c) from the current flowing through the windings (224a, 224b, 224c), and a current is induced in the toroidal channel (214) by this induced magnetic force, can correspond to the principle of a transformer. In this respect, the plasma source (200) may be called a transformer coupled plasma (TCP) device or a magnetic induction plasma device.

[0049] In the transformer structure, the windings (224a, 224b, 224c) can function as primary coils, and the toroidal channel (214) defined by the body portions (212a, 212b, 212c) can function as secondary coils. In this regard, the windings (224a, 224b, 224c) can be referred to as primary coils or primary windings, and the current flowing through the windings (224a, 224b, 224c) can be referred to as primary current. Furthermore, the current induced within the toroidal channel (214) can be referred to as secondary current.

[0050] The plasma source (200) can form a plasma atmosphere within the reaction body (210) using this secondary current. A more detailed description of the control of the plasma in the plasma source (200) will be provided later.

[0051] FIGS. 4 to 6 are schematic cross-sectional views showing a plasma source assembly according to some embodiments of the present invention.

[0052] Referring to FIG. 4, the plasma source assembly (3000) may include a gas exhaust plate (7000) and at least one plasma source (3100).

[0053] The plasma source (3100) may have substantially the same structure as the aforementioned plasma source (200), and thus the configuration and description of the plasma source (200) may be referenced. A plurality of gas discharge holes (7100) may be formed in the gas discharge plate (7000). The gas discharge holes (7100) are hole structures that penetrate the gas discharge plate (7000) and may be formed in the shape of a cylinder, a cone, a pyramid, etc.

[0054] A plasma source (3100) may be coupled to a gas discharge plate (7000) to supply activated process gas to the gas discharge plate (7000). For example, the gas discharge holes (7100) may be formed on the gas discharge plate (7000) to match the shape of the plasma source (3100) so that the gas discharge holes (7100) communicate with the opening (2124) of the plasma source (3100) and are aligned with the opening (2124).

[0055] In this way, by combining the gas discharge plate (7000) with the plasma source (3100), the activated process gas generated in the plasma source (3100) can be easily supplied to the lower part of the plasma source (3100) through the opening (2124) and then sprayed through the gas discharge plate (7000), and conversely, the inflow of particles, etc. into the plasma source (3100) from outside the gas discharge plate (7000) can be suppressed.

[0056] In some embodiments, an insulating member (3170) may be interposed between the plasma source (3100) and the gas discharge plate (7000) to electrically insulate the two.

[0057] In some embodiments, the gas discharge plate (7000) may be formed of a conductive material and may be connected to a ground portion.

[0058] FIGS. 5 and 6 are schematic drawings showing plasma source assemblies (3000a, 3000b) according to some embodiments of the present invention.

[0059] Referring to FIGS. 5 and 6, plasma source assemblies (3000a, 3000b) may each include a gas discharge plate (7000), a first plasma source (3200), and a second plasma source (3100).

[0060] The second plasma source (3100) may have substantially the same structure as the aforementioned plasma source (200), and thus the configuration and description of the plasma source (200) may be referenced. The first plasma source (3200) may have a structure similar to the aforementioned plasma source (200), but some configurations may be modified from the plasma source (200) in that its diameter is smaller. For example, in the first plasma source (3200), the reaction body (210) may be composed of one or two pieces rather than three pieces, and accordingly, one or two magnetic cores may also be provided.

[0061] The first plasma source (3200) may be provided with a first opening (2124a) through which process gas activated through the first plasma source (3200) is discharged, and the second plasma source (3100) may be provided with a second opening (2124b) through which process gas activated through the second plasma source (3100) is discharged. For the first opening (2124a) and the second opening (2124b), refer to the description of the opening (2124) of the plasma source (200).

[0062] The first plasma source (3200) and the second plasma source (3100) can each be coupled to the gas exhaust plate (7000). For example, the second plasma source (3100) can be coupled to the gas exhaust plate (7000) on the outside of the first plasma source (3200). More specifically, the first plasma source (3200) can be coupled to the inside of the gas exhaust plate (7000), and the second plasma source (3100) can be coupled to the outside of the gas exhaust plate (7000) to surround the first plasma source (3200).

[0063] In some embodiments, the gas exhaust plate (7000) may include a first gas exhaust plate (7000a) to which a first plasma source (3200) is coupled and a second gas exhaust plate (7000b) to which a second plasma source (3100) is coupled. For example, the first gas exhaust plate (7000a) may refer to an inner portion of the gas exhaust plate (7000), and the second gas exhaust plate (7000b) may refer to an outer portion of the gas exhaust plate (7000). An insulating member (3270) may be interposed between the first gas exhaust plate (7000a) and the first plasma source (3200), and an insulating member (3170) may be interposed between the second gas exhaust plate (7000b) and the second plasma source (3100).

[0064] Process gas activated from the first plasma source (3200) can be supplied to the first gas discharge plate (7000) through the first opening (2124a), and process gas activated from the second plasma source (3100) can be supplied to the second gas discharge plate (7000b) through the second opening (2124b).

[0065] In this way, a plurality of plasma sources, such as a first plasma source (3200) and a second plasma source (3100), are arranged on a gas discharge plate (7000), thereby allowing the discharge amount of activated process gas, such as radicals, to be controlled by region. For example, the amount of radicals discharged from the first plasma source (3200) and the second plasma source (3100) can be controlled according to the size and shape of the first opening (2124a) and the second opening (2124b).

[0066] In some embodiments, as illustrated in FIG. 5, in a plasma source assembly (3000a), the first opening (2124a) of the first plasma source (3200) and the second opening (2124b) of the second plasma source (3100) may be arranged at the same height, and the first gas exhaust plate (7000a) and the second gas exhaust plate (7000b) may be formed integrally on the same plane. In this case, process gas controlled by region can be supplied through the gas exhaust plate (7000) by controlling the process gas supply conditions and / or plasma generation conditions of the first plasma source (3200) and the second plasma source (3100).

[0067] In some embodiments, as illustrated in FIG. 6, in the plasma source assembly (3000b), the first gas exhaust plate (7000a) and the second gas exhaust plate (7000b) may be joined to each other at different heights so that the heights of the first opening (2124a) and the second opening (2124b) are positioned at different heights. For example, the gas exhaust plate (7000) may be formed with a stepped structure. Through this structure, the process gas supplied from the inner side of the gas exhaust plate (7000), i.e., the first gas exhaust plate (7000a), may be dispersed relatively far, and the process gas supplied from the outer side, i.e., the second gas exhaust plate (7000b), may be dispersed relatively little. The first gas discharge plate (7000a) and the second gas discharge plate (7000b) can be formed separately and then combined, or formed integrally and then undergo processing such as bending to form the gas discharge plate (7000).

[0068] For example, the first gas exhaust plate (7000a) may be positioned higher than the second gas exhaust plate (7000b) so that the first opening (2124a) in the plasma source assembly (3000b) is positioned higher than the second opening (2124b). In this case, the supply density of the process gas on the outside of the gas exhaust plate (7000) may be higher than on the inside.

[0069] Plasma source assemblies (3000, 3000a, 3000b) can utilize the advantages of the plasma source (200) by using the plasma source (200). Furthermore, the plasma source assemblies (3000, 3000a, 3000b) can adjust the emitted plasma density by changing the arrangement of the first plasma source (3200) and the second plasma source (3100).

[0070] The aforementioned plasma source assemblies (3000, 3000a, 3000b) refer to a structure in which plasma sources (3100, 3200) are combined with a gas discharge plate (7000), but are not limited to these terms, and plasma sources and plasma source assemblies are not distinguished and may all be referred to as plasma sources or all as plasma source assemblies.

[0071] FIGS. 7 to 12 are schematic cross-sectional views partially showing plasma source assemblies (3000, 3000-1, 3000-2, 3000-3, 3000-4, 3000-5) according to some embodiments of the present invention. Although the body portion (212c) is not shown in FIGS. 7 to 11, it can be understood from the illustration in FIGS. 1 and 2 that the body portion (212c) is coupled to the body portions (212a, 212b) of the plasma source assembly (3000, 3000-1, 3000-2, 3000-3, 3000-4, 3000-5).

[0072] Referring to FIG. 7, the plasma source assembly (3000-1) can be understood as having some configuration modified or added to the plasma source assembly (3000). The plasma source assembly (3000-1) may further include an ignition assist unit (270a) and a control unit (250) for controlling it.

[0073] The ignition assist unit (270a) may be electrically connected to the interior of the reaction body (210) and provided to induce an electric field to assist plasma ignition within the reaction body (210). For example, the ignition assist unit (270a) may include a power supply unit (272) and a conductive line unit (274).

[0074] For example, the ignition auxiliary unit (270a) may apply power to at least some of the body parts (212a, 212b, 212c), such as body part (212a), to induce an electric field within the insulating unit (216a). More specifically, the ignition auxiliary unit (270a) may include a conductive line unit (274) electrically connected to the body parts (212a, 212b) on both sides of the power supply unit (272) and the insulating unit (216a). For example, the conductive line unit (274) may be connected to the flange (2126) of the body part (212a) on one side of the insulating unit (216a) and to the body part (212b) on the other side of the insulating unit (216a).

[0075] The power supply unit (272) may include various power supply devices for supplying RF or DC power, for example, a high-frequency power supply device for supplying high-frequency power. The power supply unit (272) may supply a voltage higher than the breakdown voltage required for plasma formation according to the gas, for example, Paschen's law. For example, the power supply unit (272) may be provided as a separate power source separated from the power supply unit (230), or it may be a high-voltage power source branched from the power supply unit (230) and boosted.

[0076] When voltage is applied to both sides of the insulating part (216a) by the ignition assisting part (270a), an electric field can be induced within the insulating part (216a). Accordingly, plasma ignition can be initiated in a capacitively coupled plasma (CCP) manner in the toroidal channel (214) within the insulating part (216a). The induction of an electric field by such an ignition assisting part (270a) can serve to trigger or assist plasma ignition.

[0077] For example, the control unit (250) can control the induction of an electric field in the toroidal channel (214) inside the reaction body (210), such as the insulating unit (216a), by means of the ignition assist unit (270a), so that plasma ignition is initiated in a CCP manner. Subsequently, the control unit (250) can control the application of power from the power supply unit (230) to the windings (224a, 224b, 224c) so that plasma ignition and maintenance are stably performed in a TCP manner inside the reaction body (210), such as the toroidal channel (214). Once plasma ignition is stabilized, the voltage application through the ignition assist unit (270a) is stopped, and the plasma can be maintained by the power applied to the windings (224a, 224b, 224c).

[0078] Therefore, the plasma ignition success rate can be increased through plasma ignition via electric field induction using the CCP method, and stable plasma maintenance can subsequently be achieved using the TCP method. Accordingly, compared to the case where plasma ignition and maintenance are performed solely using the conventional TCP method, the plasma can be stably ignited and maintained by combining the CCP and TCP methods.

[0079] In some embodiments, the ignition assist member (270a) may be provided to apply voltage to both sides of a selected insulating member to induce an electric field in at least one selected insulating member among the insulating members (216a, 216b, 216c). For example, the ignition assist member (270a) may apply power between the body members (212a, 212b) on both sides of the insulating member (216a), apply power to the body members (212b, 212c) on both sides of the insulating member (216b), or apply power between the body members (212a, 212c) on both sides of the insulating member (216c). The control unit (250) can control plasma ignition and maintenance within the reaction body (210), such as the toroidal channel (214), by inducing an electric field within the insulation selected by the ignition assist unit (270a) and then applying power from the power supply unit (230) to the windings (224a, 224b, 224c).

[0080] In some embodiments, the ignition aids (270a) may be provided to apply voltage to both sides of each of the insulating parts (216a, 216b, 216c) to induce an electric field in the insulating parts (216a, 216b, 216c). The ignition aids (270a) may be driven simultaneously or selectively by the control unit (250). For example, the control unit (250) may control plasma ignition and maintenance within the reaction body (210), such as the toroidal channel (214), by inducing an electric field within the insulating parts (216a, 216b, 216c) through the ignition aids (270a) and then applying power from the power supply unit (230) to the windings (224a, 224b, 224c).

[0081] Meanwhile, if plasma ignition is not smooth, the above steps may be repeated, but one of the insulating parts (216a, 216b, 216c) may be alternately selected to induce an electric field in the selected insulating part and power may be applied to the windings (224a, 224b, 224c).

[0082] According to the aforementioned plasma source assembly (3000-1), by first inducing an electric field in at least a portion of the insulating portions (216a, 216b, 216c) where plasma ignition begins using the ignition auxiliary portions (270a), the plasma can be stably maintained in a TCP manner while increasing the success rate of plasma ignition.

[0083] Meanwhile, the ignition assist unit (270a) and control unit (250) within the plasma source assembly (3000-1) can be similarly applied to the aforementioned plasma source (200) and plasma source assemblies (3000, 3000a, 3000b).

[0084] Referring to FIG. 8, the plasma source assembly (3000-2) may further include an ignition assisting unit (270b) and a control unit (250) for controlling it.

[0085] The ignition assist unit (270b) applies power to at least a portion of the body parts (212a, 212b, 212c), and the gas discharge plate (7000) may be grounded. For example, the ignition assist unit (270b) may be electrically connected between the reaction body (210) and the gas discharge plate (7000) to induce an electric field to assist plasma ignition within the reaction body (210). For example, the ignition assist unit (270b) may apply power, such as voltage, between the reaction body (210) and the gas discharge plate (7000). The ignition assist unit (270b) may include a power supply unit (272) and a conductive line unit (274). For the power supply unit (272) and the conductive line unit (274), refer to the description of the ignition assist unit (270a). According to the ignition auxiliary part (270b), an electric field can be induced over a wide range between the body parts (212a, 212b, 212c) and the gas discharge plate (7000).

[0086] When voltage is applied between the reaction body (210) and the gas discharge plate (7000) by the ignition assist unit (270b), plasma ignition can be initiated in the toroidal channel (214) in a capacitively coupled plasma (CCP) manner due to the electric field induced between them. Subsequently, power is applied from the power supply unit (230) to the windings (224a, 224b, 224c) so that plasma ignition and maintenance can be stably achieved in a TCP manner inside the reaction body (210), for example, within the toroidal channel (214). Once the plasma ignition is stabilized, the voltage application through the ignition assist unit (270b) is stopped, and the plasma can be maintained by the power applied to the windings (224a, 224b, 224c).

[0087] In some embodiments, the ignition auxiliary part (270b) may be electrically connected between one of the body parts (212a, 212b, 212c) and the gas discharge plate (7000). For example, the ignition auxiliary part (270b) may apply power between the body part (212a) and the gas discharge plate (7000), apply power between the body part (212b) and the gas discharge plate (7000), or apply power between the body part (212c) and the gas discharge plate (7000). The control unit (250) can control to apply power to the windings (224a, 224b, 224c) after inducing an electric field between one of the body parts (212a, 212b, 212c) and the gas discharge plate (7000) through the ignition assist unit (270b).

[0088] In some embodiments, ignition aids (270b) may be electrically connected between the body portion (212a) and the gas discharge plate (7000), between the body portion (212b) and the gas discharge plate (7000), and between the body portion (212c) and the gas discharge plate (7000), respectively. The ignition aids (270b) may be driven simultaneously or selectively by the control unit (250). For example, the control unit (250) may control plasma ignition in the toroidal channel (214) by inducing an electric field between the body portions (212a, 212b, 212c) and the gas discharge plate (7000) through the ignition aids (270b) and then applying an ignition voltage to at least one of the windings (224a, 224b, 224c).

[0089] Referring to FIG. 9, in the plasma source assembly (3000-2), the gas exhaust plate (7000) can be coupled to the process chamber (1000). For example, the process chamber (1000) may be a component of a substrate processing device, such as the substrate processing device (5000a) of FIG. 13. The process chamber (1000) may be grounded, and the gas exhaust plate (7000) may be coupled to be electrically connected to the process chamber (1000). Accordingly, the gas exhaust plate (7000) may be grounded through the process chamber (1000).

[0090] For example, the ignition auxiliary part (270b) may be electrically connected between at least one of the body parts (212a, 212b, 212c) and the process chamber (1000). When power is applied through the power supply part (272) of the ignition auxiliary part (270b), an electric field may be induced between at least one of the body parts (212a, 212b, 212c) and the gas discharge plate (7000) and / or the process chamber (110).

[0091] Referring to FIG. 10, the plasma source assembly (3000-3) may further include an ignition assist unit (270a), an ignition assist unit (270b), and a control unit (250) for controlling them.

[0092] For the ignition auxiliary part (270a) and the ignition auxiliary part (270b), refer to the description of the plasma source assembly (3000-1, 3000-2) described above. When the ignition auxiliary part (270a) is configured to apply power between the body parts (212a, 212b), the ignition auxiliary part (270b) may be configured to apply power between the body part (212c) and the gas discharge plate (7000).

[0093] When plasma is formed, the control unit (250) can induce an electric field within the reaction body (210) using either or both of the ignition assist unit (270a) and the ignition assist unit (270b) to start plasma ignition in the reaction body (210) in the CCP manner. Subsequently, the control unit (250) applies power from the power supply unit (230) to the windings (224a, 224b, 224c) so that plasma ignition and maintenance can be stably performed in the TCP manner.

[0094] Referring to FIG. 11, the plasma source assembly (3000-4) may further include an ignition assist unit (270a), an ignition assist unit (270b), at least one switch (SW), and a control unit (250) for controlling them. The plasma source assembly (3000-4) can be understood as a structure that further includes a switch (SW) in addition to the plasma source assembly (3000-3).

[0095] A switch (SW) may be connected between the body parts (212a, 212b) so that the body parts (212a, 212b) are electrically connected or electrically disconnected by bypassing the insulating part (216a). When the switch (SW) is turned on, the body parts (212a, 212b) are electrically connected, and an electrical path bypassing the insulating part (216a) may be formed. On the other hand, when the switch (SW) is turned off, the body parts (212a, 212b) may be electrically insulated by the insulating part (216a).

[0096] Switches (SW) may be applied with various structures capable of controlling the electrical connection to turn on or off. For example, the switch (SW) may include a transistor in which an electrical channel is formed according to a control signal.

[0097] In some embodiments, a plurality of switches (SW) may each be connected between two adjacent body parts (212a, 212b, 212c) such that the body parts (212a, 212b, 212c) are electrically connected or electrically disconnected by bypassing the insulating parts (216a, 216b, 216c). For example, a first switch (SW) may be connected between the ends of two adjacent body parts (212a, 212b), a second switch (SW) may be connected between the ends of two adjacent body parts (212b, 212c), and a third switch (SW) may be connected between the ends of two adjacent body parts (212c, 212a).

[0098] In some embodiments, the control unit (250) can control the formation of plasma within the toroidal channel (214) by controlling the switches (SW). When secondary current is induced within the toroidal channel (214), the voltage can be applied across most of the insulating sections (216a, 216b, 216c). Thus, plasma ignition within the toroidal channel (214) can be initiated within the insulating sections (216a, 216b, 216c). When all switches (SW) are turned off, the total voltage during plasma ignition can be divided equally between the insulating sections (216a, 216b, 216c), with each being one-third. In this respect, the control of the switches (SW) can affect the magnitude of the voltage applied between the insulating sections (216a, 216b, 216c).

[0099] For example, the control unit (250) can control at least one of the switches (SW) to a turned-on state when the plasma in the toroidal channel (214) is ignited. In this case, there is no voltage drop between the insulating parts (216a, 216b, 216c) corresponding to the turned-on switch, so that the voltage applied to the insulating parts corresponding to the turned-off switches can be increased.

[0100] During plasma ignition, it may be advantageous to apply a high voltage to some insulating parts rather than distributing the voltage evenly across all insulating parts (216a, 216b, 216c). For example, the plasma ignition success rate can be increased by applying the total voltage to only one of the insulating parts (216a, 216b, 216c) or by applying half of the total voltage to two of them.

[0101] In some embodiments, the control unit (250) may keep only one of the switches (SW) in a turned-off state and turn on the others when the plasma is ignited, and turn off the remaining switches that were turned on when the plasma is ignited so that all of the switches (SW) are turned off when the plasma is maintained.

[0102] In some embodiments, the control unit (250) may select at least one of the switches (SW) to perform a turn-on operation whenever ignition of the plasma in the toroidal channel (214) is performed. For example, when the control unit (250) intends to process the process repeatedly using the plasma source assembly (3000-4), it may change the plasma ignition position each time by sequentially changing at least one switch among the switches (SW) that is controlled to a turn-on state for each process cycle unit. Here, the process cycle unit may be distinguished based on when plasma ignition is newly required, and may be defined as a unit for processing substrates in a lot or foup unit, for example.

[0103] Accordingly, voltage can be concentrated only in specific parts within the body parts (212a, 212b, 212c), thereby preventing concentrated damage to specific parts. Accordingly, damage to the components of the plasma source assembly (3000-4) can be reduced, thereby increasing maintenance time and improving operational efficiency.

[0104] In some embodiments, the control unit (250) can control at least one of the switches (SW) to a turn-on state when plasma ignition occurs in the toroidal channel (214), and then apply an ignition voltage to at least one of the windings (224a, 224b, 224c).

[0105] In some embodiments, the control unit (250) can control both the switches (SW) and the ignition aids (270a, 270b) when forming plasma in the plasma source assembly (3000-4). For example, the control unit (250) can turn off at least one of the switches (SW) and turn on the remaining switches, induce an electric field in the reaction body (210) through at least one of the ignition aids (270a, 270b), and then control the ignition of the plasma in the toroidal channel (214) by applying an ignition voltage to at least one of the windings (224a, 224b, 224c).

[0106] For example, the control unit (250) can control the ignition of the plasma in the toroidal channel (214) by turning off the first switch (SW1) for electrically bypassing the first insulation unit (216a) among the switches (SW), turning on the second and third switches (SW2, SW3), inducing an electric field in the first insulation unit (216a) through at least one of the ignition aids (270a, 270b), and then applying an ignition voltage to at least one of the windings (224a, 224b, 224c).

[0107] According to this, by turning off only the first switch (SW1) so that the voltage drop is concentrated within the first insulating part (216a) and inducing an electric field within the first insulating part (216a) through at least one of the ignition auxiliary parts (270a, 270b), the success rate of plasma ignition can be significantly increased. Subsequently, by applying an ignition voltage to at least one of the windings (224a, 224b, 224c), the ignition and maintenance of the plasma within the toroidal channel (214) can be stably controlled.

[0108] Meanwhile, although the above description describes the case where the first switch (SW1) is turned off, it is also possible to turn off the second switch (SW2) or the third switch (SW3) and induce an electric field into the second insulating part (216b) or the third insulating part (216c).

[0109] Below, a plasma control method using plasma source assemblies (3000-1, 3000-2, 3000-3, 3000-4), such as a plasma formation method, is described.

[0110] For example, a step of inducing an electric field within the reaction body (210) can be performed using either or both of the ignition auxiliary parts (270a, 270b). Accordingly, plasma ignition can be initiated in a CCP manner within the reaction body (210). Subsequently, while the electric field within the reaction body (210) is induced, a step of applying an ignition voltage to at least one of the windings (224a, 224b, 224c) can be performed. Accordingly, the ignition and maintenance of the plasma within the toroidal channel (214) can be stably controlled. For control of the steps of inducing the electric field and applying the ignition voltage, refer to the description of FIGS. 7 through 10 above.

[0111] In some embodiments, prior to the step of applying an ignition voltage to the windings (224a, 224b, 224c), a step of turning on at least one of the switches (SW) and turning off at least one of the switches (SW) may be performed. The control step of these switches (SW) may be performed prior to or simultaneously with the electric field induction step using the ignition aids (270a, 270b).

[0112] Referring to FIG. 12, in the plasma source assembly (3000-5), the gas exhaust plate (7000) may include separate gas exhaust plates (7000c), for example, three gas exhaust plates (7000c). For example, the gas exhaust plates (7000c) may be understood as separate parts of the gas exhaust plate (7000).

[0113] Gas exhaust plates (7000c) can be attached to the lower portions of the body parts (212a, 212b, 212c), respectively. For example, gas exhaust holes (7100 in FIG. 4) corresponding to the openings (2124 in FIG. 2) of the body parts (212a, 212b, 212c) can be formed in the gas exhaust plates (7000c). To ensure that the openings (2124) and the gas exhaust holes (7100) communicate with each other, the gas exhaust plates (7000c) can be attached to the lower portions of the body parts (212a, 212b, 212c).

[0114] When the plasma source assembly (3000-5) is coupled to the process chamber (1100), an insulating member (3170) may be interposed between the gas exhaust plates (7000c) and the process chamber (1100). The insulating member (3170) may be a single plate or may be formed in multiple pieces corresponding to the gas exhaust plates (7000c). Openings or holes may be formed in the insulating member (3170) so that process gas is supplied to the process chamber (110) through the gas exhaust holes (7100).

[0115] In the plasma source assembly (3000-5), the process chamber (1100) is grounded, and the ignition assist unit (270b) can apply power between the body parts (212a, 212b, 212c) and the process chamber (1100) to induce an electric field between them. The control unit (250) can control plasma ignition in the toroidal channel (214) by applying power to the windings (224a, 224b, 224c) after inducing an electric field between one of the body parts (212a, 212b, 212c) and the process chamber (1100) through the ignition assist unit (270b).

[0116] The structure and control for plasma ignition in the above plasma source assemblies (3000-1, 3000-2, 3000-3, 3000-4, 3000-5) can be applied to all of the aforementioned plasma source assemblies (3000, 3000a, 3000b).

[0117] FIG. 13 is a schematic cross-sectional view showing a substrate processing apparatus (5000a) according to one embodiment of the present invention.

[0118] Referring to FIG. 13, a substrate processing device (5000a) may include a process chamber (1000), a gas injection unit (4000), a substrate support unit (2000), and at least one plasma source assembly (3000a).

[0119] A process chamber (1000) may have a reaction space (A) formed therein. The process chamber (1000) may include a body portion (1050) with an upper opening and a top lid (1100) coupled to the body portion (105). The process chamber (1000) may be connected to a vacuum pump (1300) through an exhaust portion (1200) to form a vacuum atmosphere. Furthermore, the process chamber (1000) may include an inlet / outlet for loading a substrate (S) into or unloading it from the reaction space (A), and a gate (not shown) for opening and closing the inlet / outlet.

[0120] A gas injection unit (4000) may be coupled to the process chamber (1000) to inject process gas supplied from outside the process chamber (1000) into the reaction space (A). For example, the gas injection unit (4000) may be coupled to the upper part of the process chamber (1000) so as to face the substrate support (2000). The gas injection unit (4000) may supply process gas, such as source gas, reaction gas, inert gas, etc., onto a substrate (S) within the reaction space (A).

[0121] In some embodiments, the gas injection unit (4000) may be understood as a structure coupled to the process chamber (1000) or as a structure coupled to the top lid (1100).

[0122] The plasma source assembly (3000a) is intended to activate a process gas supplied from the outside, and the above description may be referenced. The plasma source assembly (3000a) may be coupled to the process chamber (1000) opposite the substrate support (2000). For example, the plasma source assembly (3000a) may be coupled to the top of the process chamber (1000). For example, the gas injection plate (7000) of the plasma source assembly (3000a) may be coupled to the top lead (1100). The plasma source assembly (3000a) may supply the activated process gas, such as radicals, to the space below it, for example, the internal space of the gas injection unit (4000).

[0123] For example, the first plasma source assembly (3200) may be positioned in a donut shape on the central portion of the top lead (1100), and the second plasma source assembly (3100) may be positioned on the edge portion of the top lead (1100) in a larger diameter donut shape surrounding the donut shape of the first plasma source assembly (3200). The first plasma source (3200) may be supplied with process gas through the first gas pipe (3280), and the second plasma source (3100) may be supplied with process gas through the second gas pipe (3180). These plasma source assemblies (3000a) enable the injection of activated process gas across the entire central and edge portions of the gas injection unit (4000).

[0124] In some embodiments, the gas injection unit (4000) may include a distribution plate (4100) for injecting an activated process gas supplied from a plasma source assembly (3000a) into a reaction space (A). A plurality of injection holes may be formed in the distribution plate (4100) in a vertical direction. Optionally, the gas injection unit (4000) may further include a middle plate, such as a blocker plate, for injecting gas between the top lead (1100) and the distribution plate (4100).

[0125] In some embodiments, the gas injection unit (4000) may further include a separate gas inlet to supply process gas into it without passing through the plasma source assembly (3000a). In this case, the gas injection unit (4000) may supply process gas activated through the plasma source assembly (3000a) and process gas that is inactive because it does not pass through the plasma source assembly (3000a) together.

[0126] A substrate support (2000) may be coupled to a process chamber (1000) to support a substrate (S) within a reaction space (A). For example, the substrate support (2000) may be installed in the process chamber (1000) opposite to a gas injection unit (4000). Furthermore, the substrate support (2000) may include a heater (not shown) for heating the substrates (S) inside it. Since the substrate support (2000) is configured to place a substrate (S) thereon, it may also be called a substrate mounting unit, a susceptor, a substrate holder, etc.

[0127] The shape of the top plate of the substrate support (2000) generally corresponds to the shape of the substrate (S), but is not limited thereto and can be provided in various shapes to stably seat the substrate (S). Furthermore, a shaft (1200) is connected to the top plate of the substrate support (2000), and the shaft (1200) can be connected to an external motor (not shown) to enable it to move up and down. Optionally, a means for maintaining airtightness, such as a bellows tube, may be connected between the shaft (1200) and the process chamber (1000).

[0128] In some embodiments, the substrate support (2000) may further include an electrostatic electrode (not shown) to apply an electrostatic force to the substrate (S) and fix it thereon. In this case, the electrostatic electrode can generate an electrostatic force using DC power.

[0129] The aforementioned substrate processing device (5000a) can be used as a thin film deposition device, such as an atomic layer deposition (ALD) device or a chemical vapor deposition (CVD) device.

[0130] According to the substrate processing device (5000a), since the plasma source assembly (3000a) is directly coupled to the gas injection units (4000), the activated process gas, such as radicals, can be directly supplied to the substrate (S), thereby reducing the supply path of the radicals. Accordingly, by using the plasma source assembly (3000a), the recombination of radicals can be reduced compared to the case where a conventional remote plasma device is used, thereby increasing the supply efficiency of radicals and improving process reliability.

[0131] Meanwhile, although the substrate processing device (5000a) is illustrated with a structure using a plasma source assembly (3000a), it can be modified in various ways, for example, the plasma source assembly (3000a) may be replaced with plasma source assemblies (3000, 3000b). Furthermore, at least one of the ignition auxiliary parts (270a, 270b) of FIGS. 7 to 12 may be applied to the plasma source assemblies (3000, 3000a, 3000b). Accordingly, the substrate processing device (5000a) can increase the plasma ignition delivery rate by using the ignition auxiliary parts (270a, 270b).

[0132] The present invention has been described with reference to the embodiments illustrated in the drawings, but this is merely illustrative, and those skilled in the art will understand that various modifications and equivalent alternative embodiments are possible therefrom. Accordingly, the true technical scope of protection of the present invention should be determined by the technical spirit of the appended claims.

Claims

1. A gas discharge plate having multiple gas discharge holes formed therein; A plasma source coupled with an insulating member interposed thereon to supply activated process gas to the gas discharge plate, and The above plasma source is, A reaction body comprising a plurality of body portions, each having gas diffusion spaces formed therein, and a plurality of insulating portions coupled between the plurality of body portions so that the gas diffusion spaces communicate with each other, wherein the gas diffusion spaces within the plurality of body portions collectively form a toroidal channel; A plurality of magnetic cores spaced apart from each other along the toroidal channel, each surrounding the plurality of body parts; A plurality of windings arranged to wind the plurality of magnetic cores and inducing magnetic force within the plurality of magnetic cores through power supplied from a power supply unit; An ignition assisting member that applies power to at least some of the plurality of body parts to induce an electric field to assist plasma ignition within the reaction body; and A control unit comprising, after inducing an electric field within the reaction body through the ignition assisting unit, controlling the ignition of the plasma within the toroidal channel by applying an ignition voltage to at least one of the plurality of windings. Plasma source assembly.

2. In claim 1, the ignition auxiliary member applies power between body parts disposed on both sides of at least one insulating part among the plurality of body parts to induce an electric field in at least one insulating part among the plurality of insulating parts, and The control unit controls the ignition of the plasma in the toroidal channel by applying power between body parts disposed on both sides of the at least one insulating part through the ignition assisting part to induce an electric field within the at least one insulating part, and then applying an ignition voltage to at least one of the plurality of windings. Plasma source assembly.

3. In Paragraph 1, The above ignition auxiliary unit applies power between at least one of the plurality of body parts and the gas discharge plate, and The control unit controls the ignition of the plasma in the toroidal channel by applying power between the at least one body part and the gas discharge plate through the ignition assist unit to induce an electric field, and then applying an ignition voltage to at least one of the plurality of windings. Plasma source assembly.

4. In Paragraph 3, The above gas discharge plate is grounded, and The above ignition auxiliary part is electrically connected between at least one of the plurality of body parts and the gas discharge plate, Plasma source assembly.

5. In Paragraph 3, The above gas exhaust plate is coupled to the process chamber of the substrate processing device, and The above gas exhaust plate is grounded through the process chamber, and The above ignition auxiliary part is electrically connected between at least one of the plurality of body parts and the process chamber, Plasma source assembly.

6. In Paragraph 1, The plasma source includes a plurality of switches each connected between the ends of two adjacent body parts so that the plurality of body parts are electrically connected or electrically disconnected by bypassing the plurality of insulating parts. The control unit controls at least one of the plurality of switches to a turn-on state before applying an ignition voltage to at least one of the plurality of windings during plasma ignition in the toroidal channel. Plasma source assembly.

7. In Paragraph 6, The above ignition auxiliary unit applies power to body parts disposed on both sides of the first insulating part among the plurality of body parts to induce an electric field in the first insulating part among the plurality of insulating parts, and Among the plurality of switches, the first switch for electrically bypassing the first insulation part is turned off, and the remaining switches are turned on, and The control unit controls the ignition of the plasma in the toroidal channel by inducing an electric field within the first insulating unit through the ignition assisting unit and then applying an ignition voltage to at least one of the plurality of windings. Plasma source assembly.

8. In Paragraph 6, The above ignition auxiliary unit applies power between at least one of the plurality of body parts and the gas discharge plate, and The control unit induces an electric field by applying power between the at least one body part and the gas discharge plate through the ignition assist unit, controls at least one switch among the plurality of switches to a turn-on state, and then controls the ignition of the plasma in the toroidal channel by applying an ignition voltage to at least one of the plurality of windings. Plasma source assembly.

9. A process chamber with a reaction space formed inside; A substrate support member coupled to the lower part of the process chamber to support the substrate within the reaction space; A plasma source assembly according to any one of claims 1 to 8 coupled to the upper part of the process chamber; and A gas injection unit comprising a gas injection plate formed opposite to the substrate support and disposed below the plasma source assembly for injecting a process gas activated by the plasma source assembly onto the substrate support, Substrate processing device.

10. In Paragraph 9, The above process chamber includes a body portion with an upper opening and a top lid coupled to the body portion, and The gas injection plate of the above plasma source assembly is coupled to the top lead, Substrate processing device.

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