Holographic antenna and control method therefor, and antenna apparatus

By designing uniform radiating element positions and wiring in the holographic antenna, the synchronization and load imbalance problems of the holographic liquid crystal phased array antenna were solved, improving communication performance and signal quality, simplifying the process and reducing costs.

WO2026112905A1PCT designated stage Publication Date: 2026-06-04BOE TECHNOLOGY GROUP CO LTD +1

Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
BOE TECHNOLOGY GROUP CO LTD
Filing Date
2024-11-28
Publication Date
2026-06-04

AI Technical Summary

Technical Problem

Existing holographic liquid crystal phased array antennas suffer from poor synchronization and unbalanced load in splicing and wiring design, affecting communication reception performance and frequency deviation. Furthermore, they are complex to manufacture and costly.

Method used

By designing uniform radiating element positions, cross-sectional dimensions, and the number of thin-film transistors in the holographic antenna, and employing a balanced wiring design, the synchronization and load balance of each radiating element are ensured, thereby improving antenna performance.

Benefits of technology

This improved the transmission and reception performance and radiated signal quality of the holographic antenna, reduced frequency deviation and manufacturing complexity, and lowered costs.

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Abstract

A holographic antenna and a control method therefor, and an antenna apparatus, which belong to the technical field of antennas. The holographic antenna comprises a radiation structure, the radiation structure comprising a plurality of radiation units, which are arranged in an array. Each of the radiation units comprises: a first structural layer, which comprises a first electrode layer and a slit provided in the first electrode layer; a second structural layer, which is opposite the first structural layer and comprises a switch element corresponding to the slit, the switch element comprising a thin-film transistor; and a dielectric layer, which is located between the first structural layer and the second structural layer. The thin-film transistors of at least two of the radiation units are connected to the same control port, and the radiation structure maintains uniformity in terms of at least one of the following parameters: the cross-sectional dimensions at different positions, the relative positions of the plurality of radiation units, and the number of thin-film transistors connected to each of some or all of the control ports.
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