Gallium oxide vertical device and preparation method therefor

By employing epitaxial structures and low-temperature bonding technology, the crystal quality and interface characteristics of gallium oxide pn junction diodes were addressed, enabling efficient large-scale fabrication of high-quality gallium oxide pn heterojunction diodes and improving the device's breakdown voltage and reliability.

WO2026114316A1PCT designated stage Publication Date: 2026-06-04SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Filing Date
2025-11-27
Publication Date
2026-06-04

AI Technical Summary

Technical Problem

Existing technologies struggle to produce high-quality gallium oxide pn junction diodes due to issues with p-type oxide crystal quality and material interface characteristics, which prevent the full realization of the theoretical advantages of Ga2O3. Furthermore, devices fabricated through high-temperature bonding face challenges in terms of performance and reliability.

Method used

An epitaxial structure design is adopted, including a heavily doped n-type Ga2O3 substrate, a lightly doped n-type Ga2O3 drift region, an insertion layer, and a p-type nitride epitaxial layer. A high-quality pin structure is formed by low-temperature bonding, and Al elements are diffused under high pressure using the Al2O3/AlN insertion layer to improve the bonding interface quality and carrier concentration.

Benefits of technology

High-quality gallium oxide pn heterojunction diodes have been achieved, which improves the uniformity and reliability of the device, reduces the on-resistance, increases the depletion region width, and improves the breakdown voltage performance of the device, making it suitable for large-scale fabrication.

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Abstract

Disclosed in the present application are a gallium oxide vertical device and a preparation method therefor. The gallium oxide vertical device comprises an epitaxial structure, and a cathode and an anode, which match the epitaxial structure, wherein the epitaxial structure comprises a heavily doped n-type Ga2O3 substrate, a lightly doped n-type Ga2O3 drift region, an insertion layer and a p-type nitride epitaxial layer, which are sequentially stacked; the lightly doped n-type Ga2O3 drift region, the insertion layer and the p-type nitride epitaxial layer are constructed to form a p-i-n structure; the cathode forms an Ohmic contact with the heavily doped n-type Ga2O3 substrate, and the anode forms an Ohmic contact with the p-type nitride epitaxial layer; the material of the insertion layer is an Al-containing compound; and a surface region of the lightly doped n-type Ga2O3 drift region that is close to the insertion layer further contains Al, which is diffused into the lightly doped n-type Ga2O3 drift region from the insertion layer during a high-pressure bonding process.
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