Semiconductor processing systems, chemical vapor deposition (CVD) reactors and methods for depositing material on semiconductor substrates with uniform temperature and gas flow across the substrate surface

The improved CVD reactor design addresses non-uniform temperature and gas flow issues by using a conductive heat spreader and peripheral gas inlets, achieving uniform material deposition and film quality across the substrate surface.

WO2026117352A1PCT designated stage Publication Date: 2026-06-04TOKYO ELECTRON LTD +1
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
TOKYO ELECTRON LTD
Filing Date
2025-11-04
Publication Date
2026-06-04

AI Technical Summary

Technical Problem

Conventional CVD reactor designs struggle to maintain uniform temperature and gas flow across the substrate surface, leading to non-uniform material deposition, particularly in cold wall CVD chambers, due to radiative heat loss and turbulent gas flow.

Method used

The improved CVD reactor design incorporates a conductive heat spreader plate between the ceramic resistive heater and susceptor for uniform heat distribution, and uses multiple gas inlets around the periphery of the process chamber to provide uniform gas flow, ensuring consistent material deposition across the substrate surface.

Benefits of technology

This design achieves less than 1°C temperature variation and uniform gas flow, resulting in a uniform thickness of deposited material, enhancing deposition uniformity and film quality.

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Abstract

The present disclosure relates to the processing of semiconductor substrates. The present disclosure provides various embodiments of substrate processing systems, chemical vapor deposition (CVD) reactors and CVD deposition methods that utilize improved substrate heating and gas flow distribution techniques to deposit materials uniformly across a substrate surface. Multiple chambers may be utilized and a plurality of gas inlets may also be utilized.
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