Scanning magnetron device for PVD rectangular planar target, and thin film deposition apparatus

By designing a scanning magnetron device, full etching of a rectangular planar target was achieved, solving the problems of low target utilization and uneven etching, and improving the utilization efficiency of the target and the uniformity of thin film deposition.

WO2026124570A1 Publication Date: 2026-06-18SHENZHEN ARRAYED MATERIALS TECH CO LTD
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
SHENZHEN ARRAYED MATERIALS TECH CO LTD
Filing Date
2025-12-11
Publication Date
2026-06-18

AI Technical Summary

⚠Technical Problem

In the existing technology, the four corners of the rectangular planar target are difficult to be fully etched, resulting in low target utilization. Furthermore, the magnetron scanning trajectory design makes it difficult to achieve full-area etching, especially with uneven etching problems at the edges and corners.

⚗Method used

A scanning magnetron device is used, which moves the magnetron along the first and second directions by a driving device to ensure that it can reach the extreme positions of each corner of the rectangular planar target. The device is designed with alternating first and second strokes to achieve full etching of the rectangular planar target.

🎯Benefits of technology

This improved the utilization rate of the target material, ensured uniform etching at each corner of the rectangular planar target, and enhanced the utilization efficiency of the target material and the uniformity of thin film deposition.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present application relates to the technical field of vacuum deposition. Disclosed are a scanning magnetron device for a PVD rectangular planar target, and a thin film deposition apparatus. The magnetron device comprises: a magnetron; and a driving device, used to drive the magnetron to move relative to a rectangular planar target along a first direction and a second direction, such that the magnetron reaches limit positions corresponding to corners of the rectangular planar target. A movement stroke of the magnetron comprises a first stroke and a second stroke that are successively performed. During the first stroke, the magnetron moves between a first limit position and a second limit position; during the second stroke, the magnetron moves between the first limit position and a third limit position, or moves between the second limit position and the third limit position; the first limit position, the second limit position and the third limit position are different limit positions. In the present embodiment, a limit position reached by the magnetron after the second stroke is completed is different from a limit position from which the magnetron departs or which the magnetron reaches during the first stroke, thus improving the etching uniformity.
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