Thermoelectric conversion device

Abstract

In order to achieve the purpose described herein, a thermoelectric conversion device according to the present technology is provided with: a Peltier element having a first substrate including one or more first electrodes, a second substrate facing the first substrate and including one or more second electrodes, one or more P-type semiconductor elements and N-type semiconductor elements which are alternately disposed between one surface of the first substrate and one surface of the second substrate and which have their ends joined in series by the first electrodes and the second electrodes, and a first metal layer provided on the other surface of the first substrate; and a first temperature sensor provided between the first metal layer and the first substrate.

Claims

1. A thermoelectric conversion device comprising: a Peltier element having a first substrate including one or more first electrodes; a second substrate facing the first substrate and including one or more second electrodes; one or more P-type semiconductor elements and N-type semiconductor elements alternately arranged between one surface of the first substrate and the second substrate, with their ends joined in series by the first electrodes and the second electrodes; and a first metal layer provided on the other surface of the first substrate; and a first temperature sensor provided between the first metal layer and the first substrate.

2. A thermoelectric conversion device according to claim 1, wherein the first temperature sensor is in contact with the first metal layer.

3. A thermoelectric conversion device according to claim 1, wherein the first substrate has a recess for housing the first temperature sensor.

4. A thermoelectric conversion device according to claim 1, wherein the first substrate is a flexible substrate.

5. A thermoelectric conversion device according to claim 4, wherein the flexible substrate includes a polyimide film.

6. A thermoelectric conversion device according to claim 1, wherein the first substrate is a ceramic substrate.

7. A thermoelectric conversion device according to claim 6, wherein the ceramic substrate comprises aluminum nitride or alumina.

8. A thermoelectric conversion device according to claim 1, wherein the Peltier element further comprises a second metal layer provided on the other surface of the second substrate, and a second temperature sensor provided between the second metal layer and the second substrate.

9. A thermoelectric conversion device according to claim 1, wherein the first temperature sensor is a thermistor element or a semiconductor temperature sensor.

10. A thermoelectric conversion device according to claim 1, wherein the Peltier element further comprises a heat insulating resin provided between the P-type semiconductor element and the N-type semiconductor element.

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