Preparation method for fluorine-doped tin oxide film
By adjusting the number of deposition processes and using a specific gas source to prepare fluorine-doped tin oxide films in an atomic layer deposition apparatus, the problems of insufficient thickness and uniformity in the prior art have been solved, achieving precise control and improved uniformity.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- JIANGSU MICROVIA NANO EQUIP TECH CO LTD
- Filing Date
- 2025-12-24
- Publication Date
- 2026-07-02
AI Technical Summary
Existing technologies cannot precisely control the thickness and uniformity of fluorine-doped tin oxide films, thus failing to meet the requirements of different operating conditions.
By adjusting the number of deposition cycles, the number of tin oxide film sub-depositions, and the number of fluoride sub-depositions in an atomic layer deposition apparatus, and by using specific tin, fluorine, and oxygen sources, multiple cyclic deposition processes can be performed to control film thickness and uniformity.
This technology enables precise control of the thickness of fluorine-doped tin oxide films and significantly improves film uniformity, thereby reducing thickness variations.
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Figure CN2025145350_02072026_PF_FP_ABST