Semiconductor cooling device, semiconductor component, method for manufacturing semiconductor cooling device, and method for manufacturing semiconductor component

Abstract

Provided is a semiconductor cooling device (1) that has further improved heat dissipation characteristics. The semiconductor cooling device (1) is joined to a first semiconductor device main surface (401), which is one main surface of a semiconductor device (100), and comprises a base material part (16) and a heat conduction part (10) formed from a material having a thermal conductivity higher than that of silicon. When a direction from a second semiconductor device main surface (402), which is the other main surface of the semiconductor device (100), toward the first semiconductor device main surface (401) is defined as a first lamination direction (301), the heat conduction part (10) includes: a second heat conduction portion (14) that is adjacent to the first semiconductor device main surface (401) and extends in a direction parallel to the first semiconductor device main surface (401); and first heat conduction portions (12) that extend from the second heat conduction portion (14) in the first lamination direction (301).

Description

Semiconductor cooling device, semiconductor component, method for manufacturing a semiconductor cooling device, and method for manufacturing a semiconductor component

[0001] The present invention relates to a semiconductor cooling device, a semiconductor component, a method for manufacturing a semiconductor cooling device, and a method for manufacturing a semiconductor component.

[0002] Conventionally, semiconductor devices are required to have good heat dissipation characteristics. In particular, in a semiconductor device in which a backside power delivery network (BSPDN) is introduced, a signal wiring process (BEOL) layer with low thermal conductivity may be interposed in the heat dissipation path from a heat generating element such as a transistor. In such a case, the semiconductor device is required to have better heat dissipation characteristics than conventional ones.

[0003] 3D Architecture to Integrate Backside Power Interconnect and Integrated Passive Device for Thermal and Electrical Performance Management of Logic Chip (2024 International VLSI )

[0004] Regarding the heat dissipation of a semiconductor device, Non-Patent Document 1 discloses a semiconductor device in which the heat dissipation characteristics in the direction perpendicular to the main surface of the substrate are improved by forming vias.

[0005] However, in Non-Patent Document 1, the heat dissipation characteristics in the horizontal direction with respect to the main surface of the substrate are not considered. In particular, the heat dissipation in the horizontal direction near the surface element layer such as the transistor layer is not considered. For example, when there is a locally high-temperature portion in the transistor layer, heat dissipation may be insufficient only by considering the heat dissipation characteristics in the horizontal direction.

[0006] Therefore, an object of the present invention is to provide a semiconductor cooling device with further improved heat dissipation characteristics.

[0007] The semiconductor cooling device of the present invention is a semiconductor cooling device provided on a semiconductor device, and is bonded to a first semiconductor main surface which is one main surface of the semiconductor device, and comprises a base material portion and a heat conduction portion formed from a material having a higher thermal conductivity than silicon, wherein when the direction from the second semiconductor main surface which is the other main surface of the semiconductor device toward the first semiconductor main surface is defined as the first stacking direction, the heat conduction portion includes a second heat conduction portion adjacent to the first semiconductor main surface and extending in a direction parallel to the first semiconductor main surface, and a first heat conduction portion extending from the second heat conduction portion toward the first stacking direction.

[0008] According to the present invention, it is possible to provide a semiconductor cooling device with improved heat dissipation characteristics.

[0009] Figure 1 is a cross-sectional view of a semiconductor component according to the first embodiment of the present invention. Figure 2A is a cross-sectional view taken along line 311-311 in Figure 1. Figure 2B is a cross-sectional view taken along line 313-313 in Figure 1. Figure 3A is a cross-sectional view of a semiconductor cooling device before it is bonded to a semiconductor device. Figure 3B is a cross-sectional view of a semiconductor device before the semiconductor cooling device is bonded to it. Figure 3C is a cross-sectional view of a semiconductor component with the semiconductor cooling device bonded to it. Figure 4A is a cross-sectional view of a semiconductor cooling device during the manufacturing process of the first embodiment. Figure 4B is a cross-sectional view of a semiconductor cooling device during the manufacturing process of the first embodiment, following Figure 4A. Figure 4C is a cross-sectional view of a semiconductor cooling device during the manufacturing process of the first embodiment, following Figure 4B. Figure 4D is a cross-sectional view of a semiconductor cooling device during the manufacturing process of the first embodiment, following Figure 4C. Figure 4E is a cross-sectional view of a semiconductor cooling device for illustrating the dimensions of the first heat conduction section. Figure 5A is a cross-sectional view of a semiconductor device during the manufacturing process of the first embodiment. Figure 5B is a cross-sectional view of a semiconductor device during the manufacturing process of the first embodiment, following Figure 5A. Figure 5C is a cross-sectional view of a semiconductor device during the manufacturing process of the first embodiment, following Figure 5B. Figure 5D is a cross-sectional view of a semiconductor device in the manufacturing process of the first embodiment, following Figure 5C. Figure 6 is a cross-sectional view of a semiconductor component in the second embodiment of the present invention. Figure 7A is a cross-sectional view of a semiconductor cooling device in the manufacturing process of the second embodiment. Figure 7B is a cross-sectional view of a semiconductor cooling device in the manufacturing process of the second embodiment, following Figure 7A. Figure 7C is a cross-sectional view of a semiconductor cooling device in the manufacturing process of the second embodiment, following Figure 7B. Figure 7D is a cross-sectional view of a semiconductor cooling device in the manufacturing process of the second embodiment, following Figure 7C. Figure 7E is a cross-sectional view of a semiconductor cooling device in the manufacturing process of the second embodiment, following Figure 7D. Figure 7F is a cross-sectional view of a semiconductor cooling device in the manufacturing process of the second embodiment, following Figure 7E. Figure 8 is a cross-sectional view of a mounted component incorporating the semiconductor cooling device of the second embodiment. Figure 9 is a cross-sectional view of a semiconductor component in the third embodiment of the present invention. Figure 10A is a diagram corresponding to the cross-sectional view taken along line 311-311 in Figure 1, showing a modified first heat conduction part. Figure 10B is a diagram corresponding to the cross-sectional view taken along line 311-311 in Figure 1, showing a modified first heat conduction part. Figure 11A is a diagram corresponding to the cross-sectional view taken along line 311-311 in Figure 1, showing the first heat conduction part of a modified example. Figure 11B is a diagram corresponding to the cross-sectional view taken along line 311-311 in Figure 1, showing the first heat conduction part of a modified example.Figure 11C is a cross-sectional view corresponding to line 311-311 in Figure 1, showing a modified example of the first heat conduction section. Figure 12 is a flowchart showing an overview of the manufacturing process of a semiconductor component equipped with a semiconductor cooling device according to an embodiment of the present invention.

[0010] (First Embodiment) The embodiments for carrying out the invention will be described with reference to the drawings. First, the semiconductor cooling device 1 of the first embodiment will be described. A semiconductor component 200 is defined as a semiconductor component 100 on which the semiconductor cooling device 1 is provided. The semiconductor component 200 can also be called a semiconductor component 100 with a semiconductor cooling device 1. Figure 1 is a cross-sectional view of a semiconductor component 200 on which the semiconductor cooling device 1 of the first embodiment of the present invention is provided.

[0011] (Semiconductor device) As shown in Figure 1, the semiconductor device 100 comprises a back wiring layer 121, a semiconductor device substrate 110, a front element layer 131, a front wiring layer 133, and a bonding layer 135.

[0012] (Semiconductor device substrate) The semiconductor device substrate 110 is formed of, for example, silicon. One main surface of the semiconductor device substrate 110 is defined as the first semiconductor device substrate main surface 411, and the other main surface of the semiconductor device substrate 110 is defined as the second semiconductor device substrate main surface 412.

[0013] (Definition of Direction) As shown in Figure 1, the direction connecting the main surface 411 of the first semiconductor device substrate and the main surface 412 of the second semiconductor device substrate is defined as the stacking direction 300. The direction from the main surface 412 of the second semiconductor device substrate toward the main surface 411 of the first semiconductor device substrate is defined as the first stacking direction 301. The direction from the main surface 411 of the first semiconductor device substrate toward the main surface 412 of the second semiconductor device substrate is defined as the second stacking direction 302. The first stacking direction 301 and the second stacking direction 302 are opposite directions. The first stacking direction 301 and the second stacking direction 302 are parallel to the stacking direction 300.

[0014] The direction perpendicular to the stacking direction 300 is defined as the surface direction. In the surface direction, the direction indicated by the double arrow 304 in Figure 1 is defined as the first surface direction 304. The first surface direction 304 is parallel to the main surface 411 of the first semiconductor device substrate and the main surface 412 of the second semiconductor device substrate. In the surface direction, the direction perpendicular to the first surface direction 304 is defined as the second surface direction 306. The second surface direction 306 is not shown in Figure 1. The second surface direction 306 is shown in Figure 2A, etc.

[0015] (Surface element layer (heat-generating layer)) A surface element layer 131 is provided on the main surface 411 of the first semiconductor device substrate. The surface element layer 131 is an element layer formed by the FS-FEOL (Frontside Front-End of Line) process. Heat-generating elements such as transistors are formed on the surface element layer 131. Therefore, the surface element layer 131 can also be called a heat-generating layer.

[0016] (Surface wiring layer) A surface wiring layer 133 is provided on the first stacking direction 301 side of the surface element layer 131. The surface wiring layer 133 is a wiring layer formed by the FS-BEOL (Frontside Back-End of Line) process. The surface wiring layer 133 mainly forms wiring related to signal transmission.

[0017] (Backside wiring layer) A backside wiring layer 121 is provided on the main surface 412 of the second semiconductor device substrate. The backside wiring layer 121 is a wiring layer formed by the BS-BEOL (Backside Back-End of Line) process. The backside wiring layer 121 is a layer on which wiring related to power supply is mainly formed. The semiconductor device 100 has a Backside Power Delivery Network (BSPDN) configuration.

[0018] The main surface 411 of the first semiconductor device substrate and the main surface 412 of the second semiconductor device substrate are electrically connected by nanoscale through-silicon vias (n-TSVs) formed in the semiconductor device substrate 110. Note that nanoscale through-silicon vias are not shown in Figure 1. Nanoscale through-silicon vias will be explained later with reference to Figure 5A and other figures.

[0019] (Bonding portion) A bonding layer 135 is provided on the surface of the surface wiring layer 133 on the first stacking direction 301 side. The bonding layer 135 is a layer used when bonding the semiconductor cooling device 1 to the semiconductor device 100. The semiconductor cooling device 1 is bonded to the bonding layer 135 of the semiconductor device 100.

[0020] The bonding layer 135 can be formed from a metal such as copper. The bonding between the semiconductor cooling device 1 and the bonding layer 135 will be described later.

[0021] The surface of the bonding layer 135 on the side facing the first stacking direction 301 is defined as the main surface 401 of the first semiconductor device. The surface of the back wiring layer 121 on the side facing the second stacking direction 302 is defined as the main surface 402 of the second semiconductor device. The direction from the main surface 402 of the second semiconductor device toward the main surface 401 of the first semiconductor device coincides with the first stacking direction 301. The direction from the main surface 401 of the first semiconductor device toward the main surface 402 of the second semiconductor device coincides with the second stacking direction 302.

[0022] (Semiconductor Cooling Device) Next, the semiconductor cooling device 1 will be described. As shown in Figure 1, the semiconductor cooling device 1 is bonded to the first semiconductor main surface 401 of the semiconductor device 100. More specifically, the semiconductor cooling device 1 is bonded to the bonding layer 135 of the semiconductor device 100.

[0023] The semiconductor cooling device 1 comprises a base material 16 and a heat conduction part 10. The base material 16 is formed of, for example, silicon or glass. A material with a higher thermal conductivity than silicon is defined as a high thermal conductivity material. The heat conduction part 10 is formed of a high thermal conductivity material. An example of a high thermal conductivity material is copper. Other examples of high thermal conductivity materials include tungsten, copper-carbon nanotube composites (Cu-CNTCopper-Carbon Nanotube composite), silver nanowires, silver, and silver paste.

[0024] (Heat Conduction Section) The heat conduction section 10 consists of a first heat conduction section 12 and a second heat conduction section 14. This will be explained with reference to Figure 1, as well as Figures 2A and 2B. Figure 2A is a cross-sectional view taken along line 311-311 of Figure 1. Figure 2B is a cross-sectional view taken along line 313-313 of Figure 1.

[0025] (Second heat conduction portion) As shown in Figure 1, the second heat conduction portion 14 is a portion of the heat conduction portion 10 that is adjacent to the first semiconductor device main surface 401 and extends in a direction parallel to the first semiconductor device main surface 401. As shown in Figure 2B, the second heat conduction portion 14 extends in a planar manner along the first surface direction 304 and the second surface direction 306. The first semiconductor device main surface 401 of the semiconductor device 100 is covered by the second heat conduction portion 14.

[0026] Furthermore, the end of the second heat conduction section 14 in the planar direction may be exposed from the semiconductor cooling device 1. This configuration can increase the efficiency of heat dissipation by the second heat conduction section 14.

[0027] (First heat conduction section) As shown in Figure 1, the first heat conduction section 12 is the portion of the heat conduction section 10 that extends from the second heat conduction section 14 in the first stacking direction 301. The heat conduction section 10 contains multiple first heat conduction sections 12. As shown in Figure 2B, the cross-sectional shape of the first heat conduction section 12 is circular. The shape of the first heat conduction section 12 is cylindrical.

[0028] The first heat conduction section 12 is aligned in the first planar direction 304 and the second planar direction 306, and arranged in a matrix at approximately equal intervals. The first heat conduction section 12 is arranged across the entire surface of the second heat conduction section 14.

[0029] Furthermore, the end of the first heat conduction portion 12 on the first stacking direction 301 side may be covered by the base material portion 16. In other words, the end of the first heat conduction portion 12 on the first stacking direction 301 side does not have to be exposed from the surface of the base material portion 16 on the first stacking direction 301 side. This configuration makes it easier to form the first heat conduction portion 12 because it is not necessary to form vias that penetrate the base material portion 16.

[0030] (Heat Diffusion) The semiconductor cooling device 1 of this embodiment can efficiently diffuse the heat generated in the semiconductor device 100. In the semiconductor device 100, heat is generated particularly in the surface element layer 131. This is because the surface element layer 131 is a layer that contains many heat-generating elements such as transistors.

[0031] In the semiconductor cooling device 1 of this embodiment, the heat conduction section 10 is positioned near the surface element layer 131. Specifically, the second heat conduction section 14 of the heat conduction section 10 is positioned relative to the surface element layer 131 via the surface wiring layer 133 and the bonding layer 135. Both the surface wiring layer 133 and the bonding layer 135 are thin layers. Because the second heat conduction section 14 is positioned near the surface element layer 131, the heat generated in the surface element layer 131 is easily transferred to the second heat conduction section 14.

[0032] Furthermore, the heat conduction portion 10 is made of a material having a higher thermal conductivity than silicon. Therefore, the heat transferred to the second heat conduction portion 14 easily diffuses while spreading in directions perpendicular to the lamination direction 300, such as the first surface direction 304 and the second surface direction 306.

[0033] A localized high-temperature area in the semiconductor component 200 is defined as a localized high-temperature area. A localized high-temperature area is also called a hot spot. In the semiconductor cooling device 1 of this embodiment, heat diffuses in the planar direction in the second heat conduction section 14. Therefore, heat can be efficiently diffused to localized high-temperature areas in the semiconductor component 200, such as the surface element layer 131.

[0034] Furthermore, the heat conduction section 10 includes a first heat conduction section 12 that extends from the second heat conduction section 14 in the first stacking direction 301. Therefore, the heat transferred to the second heat conduction section 14 is further diffused in the first stacking direction 301 via the first heat conduction section 12.

[0035] Furthermore, multiple first heat conduction sections 12 are provided on the main surface of the second heat conduction section 14 on the first stacking direction 301 side, extending across the entire main surface. Therefore, in the semiconductor cooling device 1 of this embodiment, heat can be diffused more efficiently via the first heat conduction section 12.

[0036] (Implementation Example) Next, an implementation example of the semiconductor device 100 will be described. As shown in Figure 1, the semiconductor device 100 is connected to the redistribution layer 1200 via the semiconductor device connection layer 190 on the second semiconductor device main surface 402. An example of the semiconductor device connection layer 190 is a solder ball. An example of the redistribution layer 1200 is a silicon interposer.

[0037] The redistribution layer 1200 is connected to the organic substrate 1100 via a redistribution layer connection layer 1210. An example of the redistribution layer connection layer 1210 is a solder ball. An example of the organic substrate 1100 is a substrate formed of epoxy resin.

[0038] (Overview of Manufacturing Flow) The overview of the manufacturing flow of the semiconductor component 200 will be explained with reference to Figures 3A to 3C. Figure 3A is a cross-sectional view of the semiconductor cooling device 1 before it is bonded to the semiconductor device 100. Figure 3B is a cross-sectional view of the semiconductor device 100 before it is bonded to the semiconductor device 100. Figure 3C is a cross-sectional view of the semiconductor device 100 with the semiconductor cooling device 1 bonded to it. In other words, Figure 3C shows a cross-section of the semiconductor component 200.

[0039] In the manufacturing of the semiconductor component 200, first, the semiconductor cooling device 1 and the semiconductor device 100 are prepared separately. Then, the semiconductor component 200 is manufactured by joining the semiconductor cooling device 1 to the prepared semiconductor device 100.

[0040] (Preparation of semiconductor cooling equipment) The general outline of the manufacturing flow of semiconductor cooling equipment 1 is as follows (A1) to (A3). (A1) to (A3) are carried out in this order.

[0041] (A1) Via formation on the wafer As shown in Figure 3A, vias are formed on the silicon wafer which will become the base material portion 16. The vias are formed in the portion that will form the first heat conduction portion 12. (A2) Filling with high thermal conductivity material High thermal conductivity material is filled into the vias. This forms the first heat conduction portion 12. (A3) Formation of high thermal conductivity material layer A layer of high thermal conductivity material is formed on the main surface of the silicon wafer where the first heat conduction portion 12 is exposed. This forms the second heat conduction portion 14.

[0042] (Preparation of Semiconductor Device) The general outline of the manufacturing flow for the semiconductor device 100 is as follows (B1) to (B3). (B1) to (B3) are performed in this order.

[0043] (B1) Device formation on the wafer (formation of FS-FEOL) As shown in FIG. 3B, a device is formed on a silicon wafer as the support substrate 114. Here, the device includes, for example, an element with a large heat generation amount such as a transistor element. As a result, the surface element layer 131 is formed. (B2) Formation of FS-BEOL (surface wiring layer) The surface wiring layer 133 is formed on the first stacking direction 301 side of the surface element layer 131. (B3) Formation of the bonding layer The bonding layer 135 is formed on the first stacking direction 301 side of the surface wiring layer 133.

[0044] (Manufacture of semiconductor components) Next, the semiconductor component 200 is manufactured from the prepared semiconductor cooling device 1 and semiconductor device 100. The outline of the manufacturing flow of the semiconductor component 200 is as follows in (C1) to (C5) below. (C1) to (C5) are performed in this order.

[0045] (C1) Bonding (wafer-to-wafer) The semiconductor cooling device 1 is bonded to the semiconductor device 100. This bonding can be performed by bonding silicon wafers together (see FIG. 3C). (C2) Wafer grinding (wafer lapping) The wafer of the support substrate 114 is ground. As a result, the semiconductor device substrate 110 is formed (see FIG. 3B). (C3) Formation of nTSV (nanosilicon through via) Nanosilicon through vias are formed in the semiconductor device substrate 110. Note that nanosilicon through vias are not shown in FIG. 3C. (C4) Formation of BS-BEOL (backside wiring layer) The backside wiring layer 121 is formed. As a result, as shown in FIG. 3C, the semiconductor component 200 is formed. (C5) Bump formation Solder bumps as the semiconductor device connection layer 190 are formed on the surface of the second stacking direction 302 side of the backside wiring layer 121. Thus, the semiconductor component 200 with the semiconductor device connection layer 190 formed is obtained.

[0046] The outline of the manufacturing flow of the semiconductor component 200 is as described above. Hereinafter, the manufacturing flows of the semiconductor cooling device 1 and the semiconductor device 100 will be described in more detail.

[0047] (Manufacturing Flow of Semiconductor Cooling Device) Referring to FIGS. 4A to 4G, the manufacturing flow of the semiconductor cooling device 1 will be described. FIGS. 4A to 4F are cross-sectional views of the base material portion 16 and the like, sequentially showing the manufacturing flow of the semiconductor cooling device 1. FIG. 4G is a cross-sectional view of the semiconductor cooling device 1 for explaining the dimensions of the first heat conduction portion 12.

[0048] Further, FIG. 12 is a flowchart showing an overview of the manufacturing process of the semiconductor cooling device 1 according to an embodiment of the present invention and the semiconductor components provided with the semiconductor cooling device 1.

[0049] (Silicon Etching) First, as shown in FIG. 4A, vias 30 are formed in the base material portion 16. The base material portion 16 is composed of a silicon wafer. The shape of the via 30 is the same as the shape of the first heat conduction portion 12 to be formed. For example, when forming the first heat conduction portion 12 having a cylindrical shape, the shape of the via 30 is also that cylindrical shape.

[0050] The formation of the via 30 is performed by etching the base material portion 16. Specifically, an etching mask 32 is provided at a desired position on the surface of the base material portion 16. Then, by etching the base material portion 16 where the etching mask 32 is not provided, the via 30 is formed. After forming the via 30, the etching mask 32, that is, the resist film, is removed.

[0051] This silicon etching process corresponds to the via formation process in step S1 shown in FIG. 12.

[0052] (Insulating Film Formation) Next, as shown in FIG. 4B, an insulating film 34 is formed on the surface of the base material portion 16. The insulating film 34 can be, for example, a silicon oxide film. The method of forming the silicon oxide film is not particularly limited. The silicon oxide film can be formed by thermal oxidation, CVD (Chemical Vapor Deposition), sputtering, or the like.

[0053] The insulating film 34 also functions, for example, as a barrier layer for suppressing the diffusion of copper into the silicon wafer.

[0054] The thickness of the insulating film 34 is defined as the insulating film thickness 311. The insulating film thickness 311 can be, for example, 100 nm or more and 1500 nm.

[0055] (Seed sputtering) Next, as shown in Figure 4C, a seed layer 36 is formed on the insulating film 34. The seed layer 36 can be, for example, a multilayer film of titanium and copper. When the seed layer 36 is a multilayer film of titanium and copper, the seed layer 36 can be formed by sputtering.

[0056] The thickness of the seed layer 36 is defined as the seed layer thickness 312. The seed layer thickness 312 can be, for example, 10 nm or more and 500 nm or less.

[0057] (Electroplating of copper) Next, as shown in Figure 4D, electroplating of copper is performed. By electroplating, a copper plating is deposited on the seed layer 36. Since the copper fills the inside of the vias 30, this electroplating of copper is also called copper filling plating. The layer of copper deposited by electroplating is defined as the copper plating layer 40.

[0058] This copper filling plating process corresponds to the high thermal conductivity material filling process in step S2 shown in Figure 12.

[0059] The formation of the second heat conduction portion 14 will now be described. The second heat conduction portion 14 may be formed by the copper electroplating described above. Alternatively, the second heat conduction portion 14 may be formed by copper CVD, sputtering, or the like, separate from the copper electroplating described above. Alternatively, the second heat conduction portion 14 may be formed by copper electroplating, separate from the copper filling plating described above for filling the inside of the via 30 with copper. Furthermore, the second heat conduction portion 14 may be formed by combining these methods.

[0060] This process of forming the second heat conduction section 14 corresponds to the high thermal conductivity layer formation process of step S3 shown in Figure 12.

[0061] The layer comprising the seed layer 36 and the copper plating layer 40 is defined as the first copper layer 42. Through the above process, a semiconductor cooling device 1 is formed in which the interior of the via 30 is filled with the first copper layer 42.

[0062] The dimensions of the semiconductor cooling device 1 will be explained with reference to Figure 4E. As shown in Figure 4E, the entire surface of the base material 16 is copper plated.

[0063] Furthermore, in the semiconductor cooling device 1 shown in Figure 4E, as previously described as another example, a process of forming a second heat conduction section 14 is carried out separately after the electroplating of copper for copper filling. The layer formed by this process, combined with the first copper layer 42, is defined as the second copper layer 44.

[0064] The length of the first heat conduction section 12 in the stacking direction 300 is defined as the length of the first heat conduction section 321. The length of the first heat conduction section 321 can be, for example, 10 μm or more and 800 μm or less. The length of the first heat conduction section 321 can be 60 μm as an example.

[0065] The length of the first surface direction 304 of the first heat conduction section 12 is defined as the length of the second heat conduction section 322. The length of the second heat conduction section 322 can be, for example, 1 μm or more and 200 μm or less. The length of the second heat conduction section 322 can be, as an example, 11 μm.

[0066] If the shape of the first heat conduction section 12 is cylindrical, the length 321 of the first heat conduction section corresponds to the height of the cylinder. Also, if the shape of the first heat conduction section 12 is cylindrical, the length 322 of the second heat conduction section corresponds to the diameter of the cylinder.

[0067] The dimensions of the second heat conduction section 14 will now be described. The length of the second heat conduction section 14 in the stacking direction 300 is defined as the length of the third heat conduction section 331. The length of the third heat conduction section 331 can be, for example, 10 nm or more and 10 μm or less. Preferably, it can be 100 nm or more and 5 μm or less. More preferably, it can be 100 nm or more and 1500 nm or less.

[0068] When the second heat conduction portion 14 is formed by CVD, the length 331 of the third heat conduction portion will be, for example, 10 nm to 1500 nm. When the second heat conduction portion 14 is formed by sputtering, the length 331 of the third heat conduction portion will be, for example, 1 μm to 5 μm. When the second heat conduction portion 14 is formed by plating, the length 331 of the third heat conduction portion will be, for example, 1 μm to 10 μm. When the second heat conduction portion 14 is formed by plating, the thickness of the third heat conduction portion 331 can also exceed 10 μm.

[0069] (Manufacturing Flow of Semiconductor Device) The manufacturing flow of the semiconductor device 100 and semiconductor components 200 will be described with reference to Figures 5A to 5D. Figures 5A to 5D are cross-sectional views of the support substrate 114 and other components, sequentially showing the manufacturing flow of the semiconductor device 100.

[0070] (Device Formation) First, as shown in Figure 5A, each device is formed on the support substrate 114. The support substrate 114 is made of a silicon wafer. Examples of devices formed include nanosilicon through-vias 112, a surface element layer 131, a surface wiring layer 133, and a bonding layer 135.

[0071] Nanosilicon through-vias 112 are formed from the surface of the support substrate 114 on the first stacking direction 301 side toward the inside of the support substrate 114. More precisely, in the process shown in Figure 5A, the nanosilicon through-vias 112 are not yet complete. Only vias are formed on the support substrate 114, and the formed vias are not yet through. The vias penetrate the silicon wafer through wafer grinding, which will be explained later with reference to Figure 5C. This completes the nanosilicon through-vias 112.

[0072] Next, a surface element layer 131 is formed on the surface of the support substrate 114 on the first stacking direction 301 side. The surface element layer 131 includes transistor elements. As mentioned above, the surface element layer 131 can also be called a heat-generating layer. Next, a surface wiring layer 133 is formed. The surface wiring layer 133 has a multilayer structure. For example, wiring and interlayer connection vias are formed in the surface wiring layer 133. The wiring and interlayer connection vias formed in the wiring layer are called wiring portions 137. Next, a bonding layer 135 is formed.

[0073] (Bonding of semiconductor cooling device (bonding of support silicon)) Next, as shown in Figure 5B, the semiconductor cooling device 1 is bonded to the bonding layer 135. Specifically, the second heat conduction part 14 of the semiconductor cooling device 1 and the bonding layer 135 are bonded. This bonding can be, for example, bonding silicon wafers together. The specific bonding method in bonding wafers together is not particularly limited. For example, if both the second heat conduction part 14 and the bonding layer 135 are made of a metal such as copper, the second heat conduction part 14 and the bonding layer 135 can be bonded by metal-to-metal diffusion bonding. Alternatively, if both the second heat conduction part 14 and the bonding layer 135 have a portion made of silicon oxide and a portion made of metal, the second heat conduction part 14 and the bonding layer 135 can also be bonded by hybrid bonding.

[0074] The bonding process for this semiconductor cooling device corresponds to the bonding process in step S4 shown in Figure 12.

[0075] (Inversion and silicon wafer grinding) Next, as shown in Figure 5C, the support substrate 114 is ground. The semiconductor cooling device 1 bonded to the bonding layer 135 functions as a support substrate. The support substrate 114 is then inverted and the silicon wafer constituting the support substrate 114 is ground. The support substrate 114 remaining after grinding becomes the semiconductor device substrate 110. In addition, vias are penetrated by the grinding of the support substrate 114, forming nanosilicon through-vias 112.

[0076] (Formation of BS-BEOL) Next, as shown in Figure 5D, a back surface wiring layer 121 is formed on the surface of the semiconductor device substrate 110 exposed by grinding, on the second stacking direction 302 side. Wiring portions 137 are formed on the back surface wiring layer 121, similar to the surface wiring layer 133. With the above steps completed, the semiconductor device 100 is completed and the semiconductor component 200 is manufactured.

[0077] (Second Embodiment) The semiconductor cooling device 1 of the second embodiment will be described with reference to Figure 6 and the like. In describing the second embodiment, the focus will be on matters that differ from the first embodiment. Descriptions of matters that are the same as in the first embodiment will be omitted. Figure 6 is a cross-sectional view of a semiconductor component 200 equipped with the semiconductor cooling device 1 of the second embodiment of the present invention.

[0078] The materials constituting the heat conduction section 10 differ between the second embodiment and the first embodiment. In the first embodiment, the first heat conduction section 12 and the second heat conduction section 14 were made of the same material. Specifically, both the first heat conduction section 12 and the second heat conduction section 14 were made of copper.

[0079] In contrast, in the second embodiment, the first heat conduction portion 12 and the second heat conduction portion 14 are formed from different materials. The material forming the first heat conduction portion 12 is defined as the first high thermal conductivity material, and the material forming the second heat conduction portion 14 is defined as the second high thermal conductivity material.

[0080] In the second embodiment, the thermal conductivity of the first high thermal conductivity material and the second high thermal conductivity material can be made different. For example, the thermal conductivity of the second high thermal conductivity material can be made higher than that of the first high thermal conductivity material. This allows heat to be more efficiently diffused in the first planar direction 304 and the second planar direction 306 at a position close to the heat-generating layer such as the surface element layer 131. This makes it possible to provide a semiconductor cooling device 1 with improved heat dissipation characteristics.

[0081] Examples of the second high thermal conductivity material 5 used in the second embodiment include diamond, graphite, gold, and silver.

[0082] (Manufacturing Flow of Semiconductor Cooling Device) The manufacturing flow of the semiconductor cooling device 1 of the second embodiment will be described with reference to Figures 7A to 7F. Figures 7A to 7F are cross-sectional views of the base material 16, etc., showing the manufacturing flow of the semiconductor cooling device 1 of the second embodiment in order. In the following description, the explanation of matters that are the same as those of the manufacturing flow of the semiconductor cooling device of the first embodiment will be kept brief.

[0083] (Si etching) First, as shown in Figure 7A, vias 30 are formed on the substrate portion 16. This step is the same as the step shown in Figure 4A in the first embodiment.

[0084] (Insulating film formation) Next, as shown in Figure 7B, an insulating film 34 is formed. This step is the same as the step shown in Figure 4B in the first embodiment.

[0085] (Seed layer formation) Next, as shown in Figure 7C, a seed layer 36 is formed. This step is the same as the step shown in Figure 4C in the first embodiment.

[0086] (Cu Plating Formation and Insulating Film Formation) Next, as shown in Figure 7D, a copper plating layer 40 is formed on vias 30 and the like. This step is the same as the step shown in Figure 4D in the first embodiment.

[0087] (Planarization) Next, as shown in Figure 7E, the copper plating layer 40 is planarized. Planarization can be performed, for example, by CMP (Chemical Mechanical Polishing). Planarization grinds and removes the copper plating layer 40 on the surface of the second stacking direction side 302 of the base material 16. In addition, the surface of the second stacking direction side 302 of the base material 16 and the copper plating layer 40 on the second stacking direction side 302 within the via 30 are ground as needed. This planarizes the surface of the second stacking direction side 302 of the base material 16 and the surface of the second stacking direction side 302 of the copper plating layer 40 within the via 30. Note that the seed layer 36 is not shown in Figure 7E and subsequent figures.

[0088] (Formation of a second heat conduction section using a second high thermal conductivity material) Next, as shown in Figure 7F, a second heat conduction section 14 is formed on the flattened surface. The second heat conduction section 14 is formed using a second high thermal conductivity material which has a higher thermal conductivity than the first high thermal conductivity material.

[0089] The case where the second high thermal conductivity material is diamond will be explained. When the second high thermal conductivity material is diamond, the first heat conduction part 12 can be formed, for example, by chemical vapor deposition (CVD). Note that the type of second high thermal conductivity material and the method of forming the second heat conduction part 14 are not limited to the methods described above. The method of forming the second heat conduction part 14 can be appropriately selected depending on the method of forming the second heat conduction part 14.

[0090] In the second embodiment, the length 331 of the third heat conduction portion can be made shorter than the length 331 of the third heat conduction portion in the first embodiment. In the second embodiment, the second heat conduction portion 14 is formed of a second high thermal conductivity material which has a higher thermal conductivity than the first high thermal conductivity material. Therefore, even if the thickness of the second heat conduction portion 14 in the lamination direction 300 is reduced, heat can be sufficiently conducted and diffused in planar directions such as the first planar direction 304 and the second planar direction 306.

[0091] As a result, in the semiconductor cooling device 1 of the second embodiment, the thickness of the semiconductor cooling device 1 in the stacking direction 300 can be reduced.

[0092] The bonding of the semiconductor cooling device 1 to the semiconductor device 100 will now be described. The method of bonding the semiconductor cooling device 1 to the semiconductor device 100 is not particularly limited. The bonding method can be appropriately selected depending on the material forming the second heat conduction portion 14 and the material forming the bonding layer 135.

[0093] For example, if the second heat conduction part 14 is made of diamond and the bonding layer 135 is made of copper, the semiconductor cooling device 1 can be bonded to the semiconductor device 100 using surface activation bonding. In surface activation bonding, first, the surface is physically and chemically cleaned to remove oxide film layers and the like. Next, an ion beam is used to temporarily break the chemical bonds on the surface and activate the atoms on the surface. Then, the activated surfaces are brought into contact and bonded together.

[0094] Furthermore, if, for example, the second heat conduction portion 14 is made of diamond and the bonding layer 135 is made of silicon, the semiconductor cooling device 1 can be bonded to the semiconductor device 100 by thermal bonding.

[0095] (Mounted Components) Referring to Figure 8, an example of a mounted component 500 incorporating the semiconductor cooling device 1 of the second embodiment will be described. Figure 8 is a cross-sectional view of a mounted component 500 incorporating the semiconductor cooling device 1 of the second embodiment. As previously described with reference to Figure 1 for the first embodiment, the semiconductor component 200 including the semiconductor cooling device 1 is connected to the organic substrate 1100 via a redistribution layer 1200.

[0096] The surface of the semiconductor cooling device 1 on the side of the first stacking direction 301 is defined as the cooling device surface 431. In the mounted component 500 shown in Figure 8, a heat sink 1300 is provided on the cooling device surface 431 via a thermal interface material (TIM) layer 1310.

[0097] The material of the thermal interface material layer 1310 is not particularly limited. For example, the thermal interface material layer 1310 can be formed from silicone grease, metal material, thermal conductive pad, etc.

[0098] The heat sink 1300 can be a known heat sink made of, for example, aluminum, copper, or the like.

[0099] In the example shown in Figure 1, only the semiconductor component 200 was connected to the redistribution layer 1200. As shown in Figure 8, in addition to the semiconductor component 200, a memory such as a high-bandwidth memory (HBM) 1400 may also be connected to the redistribution layer 1200. In the example shown in Figure 8, the high-bandwidth memory 1400 is arranged on both sides of the semiconductor component 200 in the first planar direction 304.

[0100] Furthermore, in the example shown in Figure 8, resin molded portions 1500 are provided between the semiconductor component 200 and the high-bandwidth memory 1400, around the semiconductor component 200, around the high-bandwidth memory 1400, the semiconductor device connection layer 190, the high-bandwidth memory connection layer 1410, etc.

[0101] Furthermore, semiconductor components 200 and the like are connected to the printed circuit board 1000 via the organic substrate 1100. The connection of the organic substrate 1100 to the printed circuit board 1000 is made via an organic substrate connection layer 1110. The organic substrate connection layer 1110 can be, for example, a solder ball.

[0102] (Third Embodiment) The semiconductor cooling device 1 of the third embodiment will be described with reference to Figure 9 and the like. In describing the third embodiment, the same matters as in the first or second embodiment will be omitted, and the focus will be on matters that differ from the first or second embodiment. Figure 9 is a cross-sectional view of a semiconductor component 200 equipped with the semiconductor cooling device 1 of the third embodiment of the present invention.

[0103] The third embodiment differs from the first embodiment in that, in the third embodiment, the third heat conduction section 18 is formed on the first stacking direction 301 side of the first heat conduction section 12. In the first embodiment, the heat conduction section 10 consisted of a second heat conduction section 14 and a first heat conduction section 12. In contrast, in the third embodiment, the heat conduction section 10 consists of a first heat conduction section 12, a second heat conduction section 14, and a third heat conduction section 18.

[0104] The third heat conduction section 18 is formed at the end of the first heat conduction section 12 on the side facing the first stacking direction 301. The end of the first heat conduction section 12 on the side facing the first stacking direction 301 is defined as the end of the first heat conduction section 421. The third heat conduction section 18 is connected to the first heat conduction section 12 at the end of the first heat conduction section 421.

[0105] The third heat conduction section 18 has the same structure as the second heat conduction section 14. Similar to the second heat conduction section 14, the third heat conduction section 18 extends in the first planar direction 304 and the second planar direction 306, forming the surface of the semiconductor cooling device 1 on the first stacking direction 301 side.

[0106] In the semiconductor cooling device 1 of the third embodiment, the heat conducted through the first heat conduction section 12 is further diffused and dissipated through the third heat conduction section 18. Therefore, the heat dissipation characteristics can be further improved in the semiconductor cooling device 1 of the third embodiment.

[0107] A method for manufacturing the semiconductor cooling device 1 according to the third embodiment will now be described. As shown in Figure 4E, the surface of the base material portion 16 on the first stacking direction 301 side is defined as the base material portion surface 161. In the first embodiment, as shown in Figure 4E, in the stacking direction 300, the base material portion 16 exists between the first heat conduction portion end 421, which is the end of the first heat conduction portion 12 on the first stacking direction 301 side, and the base material portion surface 161. The first heat conduction portion 12 is not exposed from the base material portion surface 161.

[0108] In the third embodiment, the base material portion 16 between the end portion 421 of the first heat conduction portion and the surface 161 of the base material portion is ground and removed. This exposes the first heat conduction portion 12 from the surface 161 of the base material portion. The base material portion 16 can be ground by, for example, CMP.

[0109] Next, a third heat conduction portion 18 is formed on the exposed surface. The high thermal conductivity material forming the third heat conduction portion 18 can be, for example, the same as the high thermal conductivity material forming the first heat conduction portion 12 and the second heat conduction portion 14. Alternatively, the high thermal conductivity material forming the third heat conduction portion 18 can be a different material from the high thermal conductivity material forming the first heat conduction portion 12 and the second heat conduction portion 14.

[0110] Furthermore, in the third embodiment, similar to the second embodiment, the first heat conduction portion 12 and the second heat conduction portion 14 can be formed from different high thermal conductivity materials.

[0111] (Modifications) Modifications of the heat conduction section 10 will be described with reference to Figures 10A, 10B, and 11A to 11C. Figures 10A, 10B, and 11A to 11C are all diagrams that show modified versions of the first heat conduction section 12 and correspond to the cross-sectional view taken along line 311-311 in Figure 1.

[0112] (In-plane distribution of the first heat conduction part) The in-plane distribution of the first heat conduction part 12 will be explained with reference to Figures 10A and 10B. As shown in Figure 2A, in the first to third embodiments described above, the shape of each first heat conduction part 12 is cylindrical, and each of the first heat conduction parts 12 is evenly arranged in a matrix in the plane indicated by the first plane direction 304 and the second plane direction 306. In addition, the diameter of the cylindrical cross-section of each first heat conduction part 12 was uniform.

[0113] The arrangement and shape of each individual first heat conduction part 12 can be changed as appropriate. For example, as shown in Figure 10A, the diameter of the cylindrical cross-section may be different at different positions in the planar direction. Also, the density of the first heat conduction parts 12, the spacing between adjacent first heat conduction parts 12, etc., may be different at different positions in the planar direction.

[0114] In other words, the opening position, opening diameter, pitch, etc., of the via 30 to be formed may be changed within the plane.

[0115] In the example shown in Figure 10A, the diameter of the cylindrical cross-section is smaller near the central position in the first plane direction 304 and the second plane direction 306. Consequently, the arrangement density of the first heat conduction parts 12 increases, and the spacing between adjacent first heat conduction parts 12 becomes narrower. That is, the semiconductor cooling device 1 shown in Figure 10A has, in a plane, a first portion in which the first heat conduction parts 12 are arranged at a high density, and a second portion in which the first heat conduction parts 12 are arranged at a lower density than in the first portion. More specifically, the semiconductor cooling device 1 shown in Figure 10A has, in a plane, a central portion in which the first heat conduction parts 12 are arranged at a high density, and a peripheral portion located around the central portion in which the first heat conduction parts 12 are arranged at a lower density than in the central portion.

[0116] Furthermore, in the example shown in Figure 10B, the diameter of the cylindrical cross-section is smaller on both sides of the first surface direction 304 compared to the central part of the first surface direction 304. Consequently, the arrangement density of the first heat conduction parts 12 is higher, and the spacing between adjacent first heat conduction parts 12 is narrower. On the other hand, there are areas on both sides of the second surface direction 306 where the first heat conduction parts 12 are not arranged. In other words, the semiconductor cooling device 1 shown in Figure 10B has, in its plane, a first part in which the first heat conduction parts 12 are arranged at a high density, and a second part in which the first heat conduction parts 12 are arranged at a lower density than in the first part. More specifically, the semiconductor cooling device 1 shown in Figure 10B has, in its plane, a first side portion and a second side portion in which the first heat conduction portion 12 is arranged at a high density, and an intermediate portion located between the first side portion and the second side portion in which the first heat conduction portion 12 is arranged at a lower density than the first side portion and the second side portion.

[0117] As shown in Figures 10A and 10B, the heat dissipation characteristics can be further improved by varying the arrangement of the first heat conduction portion 12 in the planes indicated by the first plane direction 304 and the second plane direction 306.

[0118] Specifically, for example, the shape and arrangement of the first heat conduction portion 12 are determined by aligning it with the location of the localized high-temperature area in the surface element layer 131. In other words, the shape of the vias to be formed is optimized to meet the heat dissipation requirements.

[0119] For example, if transistors are densely arranged near the center of the plane, and the area near the center of the plane is a localized high-temperature region, the form and arrangement of the first heat conduction portion 12 as shown in Figure 10A is preferable. This allows for the formation of many first heat conduction portions 12 directly above the localized high-temperature region, i.e., on the first stacking direction 301 side of the localized high-temperature region. As a result, heat from the localized high-temperature region can be effectively dissipated.

[0120] When a localized high-temperature area is located near the center of the plane, heat is particularly difficult to dissipate and tends to accumulate. Even in such cases, the configuration shown in Figure 10A facilitates heat dissipation.

[0121] As another example, if, for instance, the arrangement of elements and terminals formed on the surface element layer 131 results in a large number of input / output terminals (I / O: Input / Output) being located on both sides of the first surface direction 304, and not many on both sides of the second surface direction 306, then the heat dissipation characteristics can be further improved by arranging the first heat conduction section 12 as shown in Figure 10B. This is because input / output terminals tend to generate heat, and areas where many input / output terminals are located often become localized high-temperature areas.

[0122] As described above, the heat dissipation characteristics can be further improved by varying the density of the first heat conduction section 12 within the plane of the second heat conduction section 14. Specifically, if the position of the localized high-temperature area on the first stacking direction 301 side within the plane of the second heat conduction section 14 is defined as the high-temperature position, the density of the first heat conduction section 12 near the high-temperature position within the plane of the second heat conduction section 14 is made higher than in other parts. This allows for efficient heat dissipation from the localized high-temperature area.

[0123] (Form of the first heat conduction section) Referring to Figures 11A to 11C, other forms of the first heat conduction section 12 will be described. In the first to third embodiments, the first heat conduction section 12 had a cylindrical shape. The shape of the first heat conduction section 12 is not limited to a cylindrical shape. When viewed in the cross section along line 311-311 in Figure 1, for example, as shown in Figure 11A, the shape of the first heat conduction section 12 may be ring-shaped. Also, as shown in Figure 11B, the shape of the first heat conduction section 12 may be lattice-shaped. Furthermore, as shown in Figure 11C, the shape of the first heat conduction section 12 may be hexagonal, i.e., a honeycomb structure. Note that the shape of the first heat conduction section 12 is not limited to a cylindrical or hexagonal shape, but may also be columnar. In addition, different forms of the first heat conduction section 12 may be combined in a plane. For example, the shape of the first heat conduction part 12 can be cylindrical in a part of the plane, and a grid shape in the remaining parts.

[0124] As shown in Figure 11A, if the shape of the first heat conduction section 12 is ring-shaped, for example, by positioning the center of the ring near the local high-temperature area or by narrowing the pitch of the ring near the local high-temperature area, the heat from the local high-temperature area can be diffused more efficiently.

[0125] As shown in Figure 11C, if the structure of the first heat conduction part 12 is a honeycomb structure, it becomes easier to increase the density of the first heat conduction part 12 in the plane.

[0126] In the semiconductor cooling device of this disclosure, in addition to forming vias extending in the stacking direction, a composite material having a higher thermal conductivity than silicon is placed near heat-generating elements such as transistors. This provides excellent thermal conductivity in both the vertical (stacking direction) and horizontal (plane direction) directions, efficiently dissipating heat from the heat source. Because heat can be diffused horizontally near the transistor, heat can be efficiently diffused from, for example, localized high-temperature areas on a silicon chip.

[0127] In the manufacturing process of a back-side power supply network (BSPDN), the semiconductor cooling device is manufactured separately from the semiconductor process. The semiconductor cooling device is constructed by forming vias on one side of silicon or glass and filling them with a high thermal conductivity material, which has a higher thermal conductivity than silicon. Subsequently, the surface is flattened, and the same material is formed on part or the entire surface to further improve the horizontal heat dissipation characteristics. This makes it possible to form a heat conduction section comprising a first heat conduction section and a second heat conduction section.

[0128] The embodiments of the present invention have been described above. The present invention is not limited to the embodiments described above, and various modifications, variations, and combinations are possible.

[0129] <1> A semiconductor cooling device provided on a semiconductor device, comprising: a base material portion and a heat conduction portion formed from a material having a higher thermal conductivity than silicon, wherein the heat conduction portion comprises: a base material portion and a heat conduction portion formed from a material having a higher thermal conductivity than silicon, and the direction from the second semiconductor main surface, which is the other main surface of the semiconductor device, toward the first semiconductor main surface, is defined as the first stacking direction, the heat conduction portion comprises: a second heat conduction portion adjacent to the first semiconductor main surface and extending in a direction parallel to the first semiconductor main surface, and a first heat conduction portion extending from the second heat conduction portion in the first stacking direction.

[0130] <2> The semiconductor cooling device according to <1>, wherein the first heat conduction part and the second heat conduction part are formed of different materials, and the thermal conductivity of the material forming the second heat conduction part is higher than the thermal conductivity of the material forming the first heat conduction part.

[0131] <3> The semiconductor cooling device according to <1> or <2>, wherein the end of the first heat conduction portion on the first stacking direction side is covered with the base material portion.

[0132] <4> The semiconductor cooling device according to <1> or <2>, wherein the heat conduction portion further includes a third heat conduction portion that is arranged at the end of the first heat conduction portion on the first stacking direction side and extends in a direction parallel to the main surface of the first semiconductor device.

[0133] A semiconductor component comprising the semiconductor cooling device described in any one of <5>, <1> to <4> provided on the semiconductor device, wherein the semiconductor device comprises a semiconductor device substrate, and a surface element layer and a surface wiring layer are formed sequentially between the first main surface of the semiconductor device substrate, which is one of the main surfaces of the semiconductor device substrate, and the surface element layer includes transistor elements.

[0134] <6> The semiconductor component according to <5>, wherein a back surface wiring layer is formed on the second main surface of the semiconductor device substrate, which is the other main surface of the semiconductor device substrate, and the back surface wiring layer includes wiring for power supply.

[0135] <7> A method for manufacturing a semiconductor cooling device provided in a semiconductor device, comprising a base material, a first heat conduction part, and a second heat conduction part, the method comprising: a via formation step of forming vias on the main surface of the base material; a high thermal conductivity material filling step of filling the vias with a material having a higher thermal conductivity than silicon to form the first heat conduction part; and a high thermal conductivity layer formation step of providing a material having a higher thermal conductivity than silicon so as to cover the main surface and the first heat conduction part to form the second heat conduction part.

[0136] A method for manufacturing a semiconductor component, comprising the method for manufacturing a semiconductor cooling device described in <8> and <7>, further comprising a bonding step of bonding the second heat conduction portion of the semiconductor cooling device to a semiconductor device after the high thermal conductivity layer formation step.

[0137] 1 Semiconductor cooling device 10 Heat conduction section 12 First heat conduction section 14 Second heat conduction section 16 Substrate section 18 Third heat conduction section 30 Via 32 Etching mask 34 Insulating film 36 Seed layer 40 Copper plating layer 42 First copper layer 44 Second copper layer 100 Semiconductor device 110 Semiconductor device substrate 112 Nanosilicon through-via 114 Support substrate 121 Back surface wiring layer 131 Surface element layer 133 Surface wiring layer 135 Bonding layer 137 Wiring section 161 Substrate surface 190 Semiconductor device connection layer 200 Semiconductor component 300 Stacking direction 301 First stacking direction 302 Second stacking direction 304 First surface direction 306 Second surface direction 311 Insulating film thickness 312 Seed layer thickness 321 Length of first heat conduction section 322 Length of second heat conduction section 331 Length of third heat conduction section 401 Main surface of first semiconductor device 402 Main surface of second semiconductor device 411 Main surface of first semiconductor device substrate 412 Main surface of second semiconductor device substrate 421 End of first heat conduction section 431 Cooling device surface 500 Mounted components 1000 Printed wiring board 1100 Organic substrate 1110 Organic substrate connection layer 1200 Redistribution layer 1210 Redistribution layer connection layer 1300 Heat sink 1310 Thermal interface material layer 1400 High bandwidth memory 1410 High bandwidth memory connection layer 1500 Resin molded section

Claims

1. A semiconductor cooling device provided on a semiconductor device, comprising: a base material portion and a heat conduction portion formed from a material having a higher thermal conductivity than silicon, wherein the heat conduction portion comprises: a base material portion and a heat conduction portion formed from a material having a higher thermal conductivity than silicon, and the direction from the second semiconductor main surface, which is the other main surface of the semiconductor device, toward the first semiconductor main surface, is defined as the first stacking direction, the heat conduction portion comprises: a second heat conduction portion adjacent to the first semiconductor main surface and extending in a direction parallel to the first semiconductor main surface, and a first heat conduction portion extending from the second heat conduction portion in the first stacking direction.

2. The semiconductor cooling device according to claim 1, wherein the first heat conduction part and the second heat conduction part are formed of different materials, and the thermal conductivity of the material forming the second heat conduction part is higher than the thermal conductivity of the material forming the first heat conduction part.

3. The end of the first heat conduction portion on the first stacking direction side is covered with the substrate portion, as described in claim 1.

4. The semiconductor cooling device according to claim 1, wherein the heat conduction portion further includes a third heat conduction portion disposed at the end of the first heat conduction portion on the first stacking direction side and extending in a direction parallel to the main surface of the first semiconductor device.

5. A semiconductor component comprising the semiconductor cooling device described in claim 1 provided on the semiconductor device, wherein the semiconductor device comprises a semiconductor device substrate, and a surface element layer and a surface wiring layer are sequentially formed on a first main surface of the semiconductor device substrate, which is one main surface of the semiconductor device substrate, between the first main surface of the semiconductor device substrate and the surface element layer, and the surface element layer includes transistor elements.

6. The semiconductor component according to claim 5, wherein a back wiring layer is formed on the second main surface of the semiconductor device substrate, which is the other main surface of the semiconductor device substrate, and the back wiring layer includes wiring for power supply.

7. A method for manufacturing a semiconductor cooling device provided in a semiconductor device, comprising a base material, a first heat conduction part, and a second heat conduction part, the method comprising: a via formation step of forming vias on the main surface of the base material; a high thermal conductivity material filling step of filling the vias with a material having a higher thermal conductivity than silicon to form the first heat conduction part; and a high thermal conductivity layer formation step of providing a material having a higher thermal conductivity than silicon so as to cover the main surface and the first heat conduction part to form the second heat conduction part.

8. A method for manufacturing a semiconductor component, comprising the method for manufacturing a semiconductor cooling device according to claim 7, further comprising a bonding step of bonding the second heat conduction portion of the semiconductor cooling device to a semiconductor device after the high thermal conductivity layer forming step.

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