Light-emitting device and method of manufacturing light-emitting device

Abstract

A semiconductor device is provided which includes a light-emitting element which includes a resonator end surface, and a protrusion from the resonator end surface extending in a normal direction from the resonator end surface, disposed along at least a portion of the resonator end surface, and a block including a top mounting surface and four side surfaces which are disposed orthogonally to the top mounting surface and orthogonally to one another, wherein the light-emitting element is mounted to the top mounting surface in an orientation such that the protrusion is disposed fully within a region bounded by four planes defined, respectively, by the four side surfaces.

Description

LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT-EMITTING DEVICECROSS REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of priority of U.S. Provisional Patent Application No. 63 / 739,359 filed December 27, 2024, the entire contents of which are incorporated herein by reference.

[0002] The present disclosure relates to a light-emitting device, and a method of manufacturing the light-emitting device.

[0003] Various methods have been proposed to mount a semiconductor laser element (see, e.g., PTLs 1 and 2).

[0004] [PTL 1] Japanese Unexamined Patent Application Publication No. 2003-46182 [PTL 2] Japanese Unexamined Utility Model Application Publication No. S62-30365Summary

[0005] Incidentally, it is desired, in the field of a semiconductor laser element, to suppress a decrease in a yield caused by a flaw that unintentionally occurs during a manufacturing process, i.e., to suppress occurrence of a defect. It is desirable to provide a light-emitting device that makes it possible to suppress occurrence of a defect and a method of manufacturing the light-emitting device.

[0006] A semiconductor device according to a first aspect of the present disclosure includes a light-emitting element which includes a resonator end surface, and a protrusion from the resonator end surface extending in a normal direction from the resonator end surface, disposed along at least a portion of the resonator end surface, and a block including a top mounting surface and four side surfaces which are disposed orthogonally to the top mounting surface and orthogonally to one another, wherein the light-emitting element is mounted to the top mounting surface in an orientation such that the protrusion is disposed fully within a region bounded by four planes defined, respectively, by the four side surfaces.

[0007] An imaging device according to a second aspect of the present disclosure includes a semiconductor laser element and a bonding object. The semiconductor laser element includes a semiconductor layer provided with a first cleaved surface and a second cleaved surface opposed to each other. The semiconductor laser element further has a first surface and a second surface opposed to each other with the semiconductor layer interposed therebetween in a direction intersecting normal lines of the first cleaved surface and the second cleaved surface. The bonding object has a mounting surface to which the second surface is bonded, and a third surface and a fourth surface opposed to each other in a direction intersecting a normal line of the mounting surface. The first cleaved surface is disposed at a position near the third surface. The second cleaved surface is disposed at a position distant from the fourth surface, as compared with a distance between the first cleaved surface and the third surface. An end edge of the first cleaved surface includes no protrusion protruding in a direction of the normal line of the first cleaved surface. An end edge of the second cleaved surface is provided with a non-cleaved protrusion protruding in a direction of the normal line of the second cleaved surface.

[0008] A method of manufacturing a light-emitting device according to a third aspect of the present disclosure is a method of manufacturing a light-emitting device including a bonding object and a semiconductor laser element. The bonding object has a mounting surface and a first side surface and a second side surface opposed to each other in a direction intersecting a normal line of the mounting surface. This method includes the following three steps: (1) forming a semiconductor layer on a substrate, and then forming a bar-shaped substrate having a pair of cleaved surfaces opposed to each other by cleaving the substrate and the semiconductor layer; (2) pressing a blade, for each of scribe lines, against a location shifted by a predetermined offset from a position opposed to each of the scribe lines to cleave the bar-shaped substrate, and forming the semiconductor laser element having a portion of the pair of cleaved surfaces and a first cleaved surface and a second cleaved surface, which are newly formed and are opposed to each other, by the cleavage of the bar-shaped substrate, and forming, in the semiconductor laser element, a non-cleaved protrusion, which protrudes in a direction of a normal line of the second cleaved surface, at a part, of an end edge of the second cleaved surface, close to the blade, and forming a non-cleaved cutout part at a part, of an end edge of the first cleaved surface, close to the blade; and (3) bonding the semiconductor laser element to the mounting surface to allow the first cleaved surface to be disposed at a position near the first side surface and to allow the second cleaved surface to be disposed at a position distant from the second side surface, as compared with a distance between the first cleaved surface and the first side surface.

[0009] Fig. 1 is a diagram illustrating a perspective configuration example of a light-emitting device according to an embodiment of the present disclosure.Fig. 2 is a diagram illustrating an example of a developed perspective configuration of the light-emitting device of Fig. 1.Fig. 3 is a diagram illustrating an example of a front surface configuration of the light-emitting device of Fig. 1.Fig. 4 is a diagram illustrating an example of a side surface configuration of the light-emitting device of Fig. 1.(A) of Fig. 5 is a diagram illustrating an example of a manufacturing process of the light-emitting device of Fig. 1. (B) of Fig. 5 is a diagram illustrating an example of a manufacturing process subsequent to (A) of Fig. 5. (C) of Fig. 5 is a diagram illustrating an example of a cross-sectional configuration of a substrate before cleavage in (B) of Fig. 5. (D) of Fig. 5 is a diagram illustrating an example of a cross-sectional configuration of the substrate after the cleavage in (B) of Fig. 5.(A) of Fig. 6 is a diagram illustrating an example of a manufacturing process subsequent to (B) of Fig. 5. (B) of Fig. 6 is a diagram illustrating an example of a manufacturing process subsequent to (A) of Fig. 6. (C) of Fig. 6 is a diagram illustrating an example of a manufacturing process subsequent to (B) of Fig. 6. (D) of Fig. 6 is a diagram illustrating an example of a manufacturing process subsequent to (C) of Fig. 6.Fig. 7 is a diagram illustrating a modification example of the side surface configuration of the light-emitting device of Fig. 1.(A) of Fig. 8 is a diagram illustrating an example of a manufacturing process of the light-emitting device of Fig. 7. (B) of Fig. 8 is a diagram illustrating an example of a cross-sectional configuration of a substrate before cleavage in (A) of Fig. 8. (C) of Fig. 8 is a diagram illustrating an example of a cross-sectional configuration of the substrate after the cleavage in (A) of Fig. 8.(A) of Fig. 9 is a diagram illustrating an example of a manufacturing process subsequent to (A) of Fig. 8. (B) of Fig. 9 is a diagram illustrating an example of a manufacturing process subsequent to (A) of Fig. 9. (C) of Fig. 9 is a diagram illustrating an example of a manufacturing process subsequent to (B) of Fig. 9. (D) of Fig. 9 is a diagram illustrating an example of a manufacturing process subsequent to (C) of Fig. 9.Fig. 10 is a diagram illustrating a modification example of the side surface configuration of the light-emitting device of Fig. 4.(A) of Fig. 11 is a diagram illustrating an example of a manufacturing process subsequent to (B) of Fig. 6. (B) of Fig. 11 is a diagram illustrating an example of a manufacturing process subsequent to (A) of Fig. 11. (C) of Fig. 11 is a diagram illustrating an example of a manufacturing process subsequent to (B) of Fig. 11.Fig. 12 is a diagram illustrating a modification example of the side surface configuration of the light-emitting device of Fig. 7.(A) of Fig. 13 is a diagram illustrating an example of a manufacturing process subsequent to (B) of Fig. 9. (B) of Fig. 13 is a diagram illustrating an example of a manufacturing process subsequent to (A) of Fig. 13. (C) of Fig. 13 is a diagram illustrating an example of a manufacturing process subsequent to (B) of Fig. 13.Fig. 14 is a diagram illustrating a modification example of the front surface configuration of the light-emitting device of Fig. 3.(A) of Fig. 15 is a diagram illustrating an example of a manufacturing process of the light-emitting device of Fig. 14. (B) of Fig. 15 is a diagram illustrating an example of a manufacturing process subsequent to (A) of Fig. 15.(A) of Fig. 16 is a diagram illustrating an example of a manufacturing process subsequent to (B) of Fig. 15. (B) of Fig. 16 is a diagram illustrating an example of a cross-sectional configuration of a substrate before cleavage in (A) of Fig. 16. (C) of Fig. 16 is a diagram illustrating an example of a cross-sectional configuration of the substrate after the cleavage in (A) of Fig. 16. (D) of Fig. 16 is a diagram illustrating an example of a manufacturing process subsequent to (A) of Fig. 16.(A) of Fig. 17 is a diagram illustrating an example of a manufacturing process subsequent to (D) of Fig. 16. (B) of Fig. 17 is a diagram illustrating an example of a manufacturing process subsequent to (A) of Fig. 17.Fig. 18 is a diagram illustrating a modification example of the perspective configuration of the light-emitting device of Fig. 1.Fig. 19 is a diagram illustrating an example of a front surface configuration of the light-emitting device of Fig. 18.Fig. 20 is a diagram illustrating a modification example of the perspective configuration of the light-emitting device of Fig. 1.

[0010] <Background> A manufacturing process of a semiconductor laser element includes a step of cleaving a semiconductor wafer or a bar-shaped substrate. Due to the cleavage step, an unintentional projection may be formed, in some cases, on a cleaved surface of the semiconductor laser element. When the semiconductor laser element is bonded to a submount or a heat sink to manufacture a light-emitting device, a projection may stick out from a side surface of the heat sink or the submount, in some cases. In a case where the light-emitting device is brought to the next step while the projection is in a state of sticking out from the side surface of the heat sink or the submount, there is a possibility that the projection may be brought into contact with another structure and be broken. In addition, there is also a possibility that the projection may interfere with another structure and that the semiconductor laser element may not be able to be bonded to an external component at a correct position and in a correct attitude. It is desirable to provide a light-emitting device that makes it possible to suppress occurrence of a defect caused by such a projection, and a method of manufacturing the light-emitting device.

[0011] Hereinafter, embodiments of the present disclosure are described in detail with reference to the drawings. In the present specification and the drawings, components having substantially the same functional configuration are denoted by the same reference numerals, and redundant descriptions thereof are omitted.

[0012] The drawings to be referred to in the following description are intended to describe an embodiment of the present disclosure and facilitate understanding thereof; shapes, dimensions, ratios, and the like illustrated in the drawings may differ from actual ones, in some cases, for better understanding. Further, the design of the light-emitting device illustrated in the drawings can be modified as appropriate by taking into consideration the following description and known techniques. In addition, in the description using the cross-sectional view of the light-emitting device, the up / down direction of the stacked structure of the light-emitting device corresponds to a relative direction in a case where an external electrode to be wire-bonded is defined as being the top. The up / down direction may differ, in some cases, from an up / down direction that is compliant with the actual gravitational acceleration.

[0013] In the following description, expressions regarding a size and a shape do not only mean the same values as a numerical value defined mathematically or a shape defined geometrically. The expressions regarding a size and a shape also include a shape in a case of having an industrially acceptable difference in a step of manufacturing the light-emitting device or even a shape similar thereto.

[0014] In the description of the light-emitting device, unless otherwise specified, "coupling" means electrical coupling between a plurality of elements. Additionally, "coupling" in the following description includes not only a case of coupling a plurality of elements directly and electrically, but also a case of coupling the plurality of elements indirectly and electrically via another element. It is to be noted that description is given in the following order. 1. Embodiment (Figs. 1 to 6) 2. Modification Examples (Figs. 7 to 20) 1. Embodiment <Configuration>

[0015] A description is given of a light-emitting device 1 according to an embodiment of the present disclosure. Fig. 1 illustrates a perspective configuration example of the light-emitting device 1. Fig. 2 illustrates a developed perspective configuration example of the light-emitting device 1 of Fig. 1. Fig. 3 illustrates a front surface configuration example of the light-emitting device 1 of Fig. 1. Fig. 4 illustrates a side surface configuration example of the light-emitting device 1 of Fig. 1.

[0016] As illustrated in Figs. 1 to 3, for example, the light-emitting device 1 includes a semiconductor laser element 10 provided with a ridge part R, and a submount 20. The semiconductor laser element 10 corresponds to a specific example of a "semiconductor laser element" according to an embodiment of the present disclosure. The submount 20 corresponds to a specific example of a "bonding object" according to an embodiment of the present disclosure.

[0017] The semiconductor laser element 10 is mounted on a top surface (a mounting surface Sb1) of the submount 20, with a surface, which is on a side opposite to a surface on which the ridge part R is formed, being closer to the submount 20. The mounting surface Sb1 of the submount 20 is provided with a coupling electrode Ec and an external electrode Eb coupled to the coupling electrode Ec. A lower electrode 19 provided on a back surface of the semiconductor laser element 10 is bonded to the coupling electrode Ec with solder 30 interposed therebetween. The solder 30 is configured by an Sn-based solder material, for example.

[0018] The semiconductor laser element 10 includes a substrate 11 and a semiconductor layer 12 formed on the substrate 11. The semiconductor layer 12 is a stacked body formed by subjecting the substrate 11, as a crystal growth substrate, to epitaxial crystal growing. The semiconductor layer 12 includes, for example, a lower clad layer 13, an active layer 14, an upper clad layer 15, and a contact layer 16, in this order, from a side closer to the substrate 11. It is to be noted that the semiconductor layer 12 may further include another layer in addition to those described above. The semiconductor layer 12 may further include, for example, a buffer layer to adjust lattice mismatch between the substrate 11 and the lower clad layer 13, a spacer layer to adjust an optical confinement property in a stacking direction, or the like. The semiconductor layer 12 corresponds to a specific example of a "semiconductor layer" according to an embodiment of the present disclosure.

[0019] The substrate 11 and the semiconductor layer 12 are each provided with a pair of resonator end surfaces Sa1 and Sa2 opposed to each other in an extending direction of the ridge part R. The substrate 11 and the semiconductor layer 12 are each further provided with a pair of side surfaces Sa3 and Sa4 opposed to each other in a direction orthogonal to the extending direction of the ridge part R. The resonator end surfaces Sa1 and Sa2 and the side surfaces Sa3 and Sa4 constitute a side surface of the semiconductor laser element 10. Hereinafter, a direction orthogonal to the extending direction of the ridge part R is referred to as a "width direction of the ridge part R". Respective end surfaces of at least the substrate 11, the lower clad layer 13, the active layer 14, and the upper clad layer 15 are exposed to the resonator end surfaces Sa1 and Sa2 and the side surfaces Sa3 and Sa4. The resonator end surface Sa1 corresponds to a specific example of a "first cleaved surface" according to an embodiment of the present disclosure. The resonator end surface Sa2 corresponds to a specific example of a "second cleaved surface" according to an embodiment of the present disclosure.

[0020] The resonator end surfaces Sa1 and Sa2 are each a cleaved surface. The side surfaces Sa3 and Sa4 are each a cleaved surface. The resonator end surface Sa1 is a light emission surface through which laser light is emitted to the outside. Accordingly, the semiconductor laser element 10 is an edge-emitting laser that is able to emit laser light to the outside from the resonator end surface Sa1. The resonator end surfaces Sa1 and Sa2 function as resonator mirrors, and the ridge part R functions as an optical waveguide. As illustrated in Fig. 4, for example, the resonator end surface Sa1 may be provided with a multilayer reflective film La1 configured to allow a reflectance at the resonator end surface Sa1 to be about 15%, for example. As illustrated in Fig. 4, for example, the resonator end surface Sa2 may be provided with a multilayer reflective film La2 configured to allow a reflectance at the resonator end surface Sa2 to be about 95%, for example.

[0021] The semiconductor layer 12 is provided with the ridge part R having a raised shape. The ridge part R is provided between the resonator end surface Sa1 and the resonator end surface Sa2 in the semiconductor layer 12. The ridge part R has a band shape extending from the resonator end surface Sa1 to the resonator end surface Sa2. The ridge part R is provided on the contact layer 16 and the upper clad layer 15 of the semiconductor layer 12, for example.

[0022] The substrate 11 is, for example, an Si-doped n-type GaAs substrate. The substrate 11 may be configured by a material system different from that of the semiconductor layer 12. In this case, the buffer layer described above may be provided in the semiconductor layer 12. The semiconductor layer 12 is configured by a semiconductor material of an AlxGa1-xAs system (0 ≦x < 1), for example. The lower clad layer 13 is configured by Si-doped n-type Alx1Ga1-x1As (0 < x1 < 1), for example. The active layer 14 has a multi-quantum well structure, for example. The multi-quantum well structure is, for example, a structure in which a barrier layer and a well layer are alternately stacked. The barrier layer is configured by Alx2Ga1-x2As (0 < x2 < 1), for example. The well layer is configured by Alx3Ga1-x3As (0 < x3 < 1, x3 > x2), for example. In the active layer 14, a dopant in the multi-quantum well structure constituting the active layer 14 and a doping concentration are adjusted to allow average electric characteristic of the active layer 14 to be of a p-type. The upper clad layer 15 is configured by C-doped p-type Alx4Ga1-x4As (0 < x4 < 1), for example. The contact layer 16 is configured by C-doped p-type GaAs, for example. The materials of the substrate 11 and the semiconductor layer 12 are not limited to the materials described above. The substrate 11 may be an inclined substrate, for example.

[0023] The semiconductor laser element 10 includes an upper electrode 18 on a top surface of the semiconductor layer 12. The semiconductor laser element 10 includes the lower electrode 19 on a back surface of the substrate 11. A front surface of the lower electrode 19 corresponds to a specific example of a "second surface" according to an embodiment of the present disclosure.

[0024] The upper electrode 18 is a metal layer to inject a current supplied from the outside into the ridge part R. The upper electrode 18 is formed in contact with a top surface of the ridge part R. The upper electrode 18 is in contact with the contact layer 16 formed on an upper part of the ridge part R, for example. The upper electrode 18 includes, for example, Ti, Pt, and Au, in this order, from a side closer to the ridge part R. It is sufficient for the upper electrode 18 to be electrically coupled to the top surface of the ridge part R, and a layer configuration thereof is not limited to the configuration described above.

[0025] The lower electrode 19 is formed in contact with the back surface of the substrate 11, for example. The lower electrode 19 includes at least two or more of Ti, Al, vanadium (V), Pt, or Au, for example. The lower electrode 19 is electrically coupled to the back surface of the substrate 11. The lower electrode 19 may be in contact with the entire back surface of the substrate 11, or may be in contact with only a portion of the back surface of the substrate 11.

[0026] The semiconductor laser element 10 includes an insulating film 17 in contact with both side surfaces and the foot of the ridge part R. The insulating film 17 is a film to regulate a region where a current supplied from the outside is injected into the ridge part R. The insulating film 17 is provided with an opening at a location opposed to the top surface of the ridge part R. The upper electrode 18 is provided in the opening of the insulating film 17. The upper electrode 18 is in contact with the top surface of the ridge part R via the opening of the insulating film 17.

[0027] The semiconductor laser element 10 includes an external electrode Ea on top surfaces of the upper electrode 18 and the insulating film 17. A front surface of the external electrode Ea corresponds to a specific example of a "first surface" according to an embodiment of the present disclosure. The external electrode Ea and the lower electrode 19 are disposed to be opposed to each other, with the semiconductor layer 12 interposed therebetween in a stacking direction of the substrate 11 and the semiconductor layer 12. The stacking direction of the substrate 11 and the semiconductor layer 12 is a direction orthogonal to (intersecting) normal lines of the resonator end surfaces Sa1 and Sa2. The external electrode Ea is, for example, a metal layers to which bonding wire is bonded. The external electrode Ea includes, for example, Ti and Au, in this order, from a side closer to the upper electrode 18 and the insulating film 17. The external electrode Ea is electrically coupled to the top surface of the ridge part R via the upper electrode 18. The external electrode Ea may be formed collectively with the upper electrode 18.

[0028] The submount 20 includes, on a surface, the mounting surface Sb1 on which the semiconductor laser element 10 is mounted, and a side surface Sb2 having a normal line that intersects a normal line of the mounting surface Sb1. The submount 20 further includes, on the surface, a side surface Sb3 and a pair of side surfaces Sb4 and Sb5. The side surface Sb3 is opposed to the side surface Sb2. The pair of side surfaces Sb4 and Sb5 has a normal line that intersects the normal lines of the mounting surface Sb1 and the side surface Sb2.

[0029] The mounting surface Sb1 corresponds to a specific example of a "mounting surface" according to an embodiment of the present disclosure. The side surface Sb2 corresponds to a specific example of a "third surface" according to an embodiment of the present disclosure. The side surface Sb3 corresponds to a specific example of a "fourth surface" according to an embodiment of the present disclosure.

[0030] The submount 20 is configured by an insulating material having a high heat dissipation property. The submount 20 is configured by, for example, AlN, Si, SiC, Cu, W, Mo, Al, diamond, or a composite material including these materials such as Cu-W or Al-SiC.

[0031] The mounting surface Sb1 is provided with the coupling electrode Ec and the external electrode Eb. The lower electrode 19 of the semiconductor laser element 10 is bonded to the coupling electrode Ec with the solder 30 interposed therebetween. The external electrode Eb is, for example, a metal layer to which the bonding wire is bonded. The coupling electrode Ec and the external electrode Eb include, for example, Ti, Pt, and Au, in this order, from a side closer to the submount 20. It is sufficient for the coupling electrode Ec and the external electrode Eb to be able to be in close contact with the mounting surface Sb1 of the submount 20, and a layer configuration thereof is not limited to the configuration described above.

[0032] The side surface Sb2, the side surface Sb3, and the side surfaces Sb4 and Sb5 constitute a side surface of the submount 20. The submount 20 has a size larger than a size of the semiconductor laser element 10. Specifically, the mounting surface Sb1 of the submount 20 has a size larger than a size of the lower electrode 19 of the semiconductor laser element 10. For example, the semiconductor laser element 10 is bonded to the mounting surface Sb1 to allow the ridge part R to be positioned to be opposed to a center position of the mounting surface Sb1 in the width direction of the ridge part R. For example, the resonator end surface Sa1 is disposed at a position near the side surface Sb2. For example, the resonator end surface Sa2 is disposed at a position distant from the side surface Sb3, as compared with a distance between the resonator end surface Sa1 and the side surface Sb2. For example, the side surface Sa3 is disposed at a position near the side surface Sb4. For example, the side surface Sa4 is disposed at a position distant from the side surface Sb5, as compared with a distance between the side surface Sa3 and the side surface Sb4.

[0033] The side surface Sb2 is a mounting surface to be bonded to an external component. The semiconductor laser element 10 is bonded to the external component via the submount 20. At this time, the side surface Sb2 has a datum feature. Meanwhile, a surface of the external component, to which the side surface Sb2 (datum feature) of the submount 20 is bonded, is a surface (simulated datum feature) that is to be a standard for measurement of an attitude and a position of the submount 20 by being brought into contact with the side surface Sb2 (datum feature) of the submount 20.

[0034] Incidentally, an end edge of the resonator end surface Sa2 of the semiconductor laser element 10 is provided with a protrusion Pp1 protruding in a normal direction of the resonator end surface Sa2, for example, as illustrated in Fig. 4. The protrusion Pp1 corresponds to a specific example of a "non-cleaved protrusion" according to an embodiment of the present disclosure. The protrusion Pp1 is provided at a part, of the end edge of the resonator end surface Sa2, close to the lower electrode 19. The protrusion Pp1 extends along the end edge of the resonator end surface Sa2. The protrusion Pp1 extends in the width direction of the ridge part R. A surface, of the protrusion Pp1, in contact with the resonator end surface Sa2 is provided with a non-cleaved surface generated by blade break described later. The surface, of the protrusion Pp1, in contact with the resonator end surface Sa2 includes no cleaved surface. A height of the protrusion Pp1 from the resonator end surface Sa2 is, for example, a value within a range of 0.02 μm or more and 5 μm or less.

[0035] Further, an end edge of the resonator end surface Sa1 of the semiconductor laser element 10 is provided with a cutout part Np1, for example, as illustrated in Fig. 4. The cutout part Np1 corresponds to a specific example of a "non-cleaved cutout part" according to an embodiment of the present disclosure. The cutout part Np1 is provided at a part, of the end edge of the resonator end surface Sa1, close to the lower electrode 19. The cutout part Np1 extends along the end edge of the resonator end surface Sa1. The cutout part Np1 extends in the width direction of the ridge part R. The cutout part Np1 is provided with a non-cleaved surface generated by blade break described later. The cutout part Np1 includes no cleaved surface. The resonator end surface Sa1 includes no protrusion protruding in a normal direction of the resonator end surface Sa1. That is, the resonator end surface Sa1 includes no protrusion sticking out from a plane including the side surface Sb2. <Operations>

[0036] In the light-emitting device 1 having such a configuration, when a predetermined voltage is applied between the upper electrode 18 and the lower electrode 19, a current is injected into the active layer 14 through the ridge part R, which causes light emission to be generated due to recombination of electrons and holes. The light is reflected by the pair of resonator end surfaces Sa1 and Sa2, and is confined by the lower clad layer 13 and the upper clad layer 15, thereby causing generation of laser oscillation at a predetermined oscillation wavelength. At this time, an optical waveguide region guided by oscillated laser light is formed in the semiconductor layer 12. The optical waveguide region is generated in a region immediately below the ridge part R, with the active layer 14 being centered. Then, laser light of a predetermined oscillation wavelength is emitted to the outside from one resonator end surface Sa1. <Manufacturing Method>

[0037] Next, a description is given of a method of manufacturing the light-emitting device 1. (A) of Fig. 5 illustrates an example of a manufacturing process of the light-emitting device 1. (B) of Fig. 5 illustrates an example of a manufacturing process subsequent to (A) of Fig. 5. (C) of Fig. 5 illustrates an example of a cross-sectional configuration of a substrate 200 before cleavage in (B) of Fig. 5. (D) of Fig. 5 illustrates an example of a cross-sectional configuration of the substrate 200 after the cleavage in (B) of Fig. 5. It is to be noted that, in the method of manufacturing the light-emitting device 1, no limitation is made to materials exemplified below.

[0038] First, a substrate 100 is prepared (see (A) of Fig. 5). The substrate 100 corresponds to a specific example of a "substrate" according to an embodiment of the present disclosure. Next, a compound semiconductor is collectively formed on the substrate 100, by, for example, an epitaxial crystalline growth method such as an MOCVD (Metal Organic Chemical Vapor Deposition: metal-organic chemical vapor deposition) method. Thus, a semiconductor layer 12A is formed on the substrate 100 (see (A) of Fig. 5). The semiconductor layer 12A may include, for example, a buffer layer, the lower clad layer 13, the active layer 14, the upper clad layer 15, and the contact layer 16. The semiconductor layer 12A corresponds to a specific example of the "semiconductor layer" according to an embodiment of the present disclosure.

[0039] Next, a resist film is formed on the contact layer 16 to cover a location where an upper part of each ridge part R is formed later. Subsequently, etching is used to remove a portion of the upper clad layer 15 and the contact layer 16, of the semiconductor layer 12A, by means of a RIE (Reactive Ion Etching) method, for example, using the resist film as a mask. This allows for formation of a plurality of ridge parts R that is two-dimensionally arranged in the semiconductor layer 12A. Thereafter, the insulating film 17 is formed on the entire surface including the plurality of ridge parts R using a vacuum deposition method or a sputtering method, for example (see (A) of Fig. 5). Subsequently, an opening is formed at a location, of the insulating film 17, opposed to the top surface of each of the ridge parts R, for example, by means of the RIE method or pattering using a solution containing hydrogen fluoride.

[0040] Next, the upper electrode 18 is formed on the top surface of each of the ridge parts R, for example, by means of a vacuum deposition method or a sputtering method. Subsequently, the external electrode Ea is formed on each upper electrode 18, for example, by means of a vacuum deposition method or a sputtering method (see (A) of Fig. 5). In this manner, a top surface 210 is formed that includes a plurality of external electrodes Ea arranged two-dimensionally (see (A) of Fig. 5). Next, the lower electrode 19 is formed at a location, of a back surface of the substrate 100, opposed to each upper electrode 18, for example, by means of a vacuum deposition method or a sputtering method. In this manner, a back surface 220 is formed that includes a plurality of lower electrodes 19 arranged two-dimensionally (see (A) of Fig. 5).

[0041] Thereafter, a plurality of scribe lines SL1 extending in a predetermined direction is formed on the top surface 210 using, for example, a diamond tool, a laser, or the like (see (A) of Fig. 5). In this manner, for example, the substrate 200 as illustrated in (A) of Fig. 5 is formed. The scribe line SL1 corresponds to a specific example of a "scribe line" according to an embodiment of the present disclosure.

[0042] Next, the substrate 200 is cleaved using a blade 300, for example (see (B) of Fig. 5). The blade 300 corresponds to a specific example of a "blade" according to an embodiment of the present disclosure. For example, as illustrated in (C) of Fig. 5, the blade 300 is pressed against a location, of the back surface 220 of the substrate 200, shifted by a predetermined offset Δd from a position opposed to the scribe line SL1, thereby allowing for cleavage of the substrate 200 (the substrate 100 and the semiconductor layer 12A). The offset Δd is, for example, a value within a range of 0.1 μm or more and 20 μm or less.

[0043] Subsequently, the cleavage of the substrate 200 is performed for each of the scribe lines SL1 by the method illustrated in (C) of Fig. 5. This allows for formation of a bar-shaped substrate 400 having cleaved surfaces 230 and 240 opposed to each other (see (A) of Fig. 6). At this time, the plurality of external electrodes Ea is formed side by side in line on a top surface 410 of the bar-shaped substrate 400. Meanwhile, the plurality of lower electrodes 19 is formed side by side in line on a back surface 420 of the bar-shaped substrate 400. The cleaved surface 230 corresponds to a specific example of the "first cleaved surface" according to an embodiment of the present disclosure. The cleaved surface 240 corresponds to a specific example of the "second cleaved surface" according to an embodiment of the present disclosure. The bar-shaped substrate 400 corresponds to a specific example of a "bar-shaped substrate" according to an embodiment of the present disclosure.

[0044] At this time, the cleavage by the method illustrated in (C) of Fig. 5 allows for formation, in the substrate 200, of a protrusion 240A at a part, of an end edge of the cleaved surface 240, close to the blade 300, for example, as illustrated in (D) of Fig. 5. The protrusion 240A protrudes in a normal direction of the cleaved surface 240. Further, a cutout part 230A is formed, in the substrate 200, at a part, of an end edge of the cleaved surface 230, close to the blade 300. The protrusion 240A corresponds to a specific example of the "non-cleaved protrusion" according to an embodiment of the present disclosure. The cutout part 230A corresponds to a specific example of the "non-cleaved cutout part" according to an embodiment of the present disclosure.

[0045] The protrusion 240A extends, in the bar-shaped substrate 400, in a longitudinal direction of the bar-shaped substrate 400, for example, as illustrated in (A) of Fig. 6. A surface, of the protrusion 240A, at a location in contact with the cleaved surface 240 includes no cleaved surface. A height of the protrusion 240A from the cleaved surface 240 is, for example, a value within a range of 0.02 μm or more and 5 μm or less. The cutout part 230A extends, in the bar-shaped substrate 400, in the longitudinal direction of the bar-shaped substrate 400, for example, as illustrated in (A) of Fig. 6. The cutout part 230A includes no cleaved surface. A depth of the cutout part 230A from the cleaved surface 240 is, for example, a value within a range of 0.02 μm or more and 5 μm or less.

[0046] Next, the multilayer reflective films La1 and La2 are formed on the pair of cleaved surfaces 230 and 240 of the bar-shaped substrate 400, for example, by means of a vacuum deposition method or a sputtering method. Next, a plurality of scribe lines SL2 is formed at a location, of the back surface 420 of the bar-shaped substrate 400, to be cleaved (see (A) of Fig. 6). Subsequently, a blade 500 is pressed against a location, of the top surface 410 of the bar-shaped substrate 400, to be cleaved, thereby allowing for cleavage of the bar-shaped substrate 400 (see (A) of Fig. 6). This allows for formation of the semiconductor laser element 10 having the resonator end surfaces Sa1 and Sa2 and the side surfaces Sa3 and Sa4, for example, as illustrated in (B) of Fig. 6.

[0047] Next, for example, a mounter is used to mount the semiconductor laser element 10 on the mounting surface Sb1 of the submount 20 (see (C) of Fig. 6). At this time, the semiconductor laser element 10 is bonded to the mounting surface Sb1 of the submount 20 to allow the resonator end surface Sa1 to be close to the side surface Sb2. Specifically, the semiconductor laser element 10 is bonded to the mounting surface Sb1 of the submount 20 to allow the resonator end surface Sa1 to be disposed at a position near the side surface Sb2. Further, the semiconductor laser element 10 is bonded to the mounting surface Sb1 of the submount 20 to allow the resonator end surface Sa2 to be disposed at a position distant from the side surface Sb3, as compared with the distance between the resonator end surface Sa1 and the side surface Sb2. As a result, the light-emitting device 1 is formed in which the semiconductor laser element 10 is mounted on the submount 20, for example, as illustrated in (D) of Fig. 6. <Effects>

[0048] Next, a description is given of the effects of the light-emitting device 1.

[0049] In the present embodiment, the end edge of the resonator end surface Sa1 of the semiconductor laser element 10 includes no protrusion protruding in the normal direction of the resonator end surface Sa1. The end edge of the resonator end surface Sa2 of the semiconductor laser element 10 is provided with the protrusion Pp1 protruding in the normal direction of the resonator end surface Sa2. This prevents a portion of the resonator end surface Sa1 from unintentionally sticking out from the side surface Sb2 of the submount 20. As a result, there is no possibility that a portion of the resonator end surface Sa1 may be brought into contact with another structure and be broken. Further, there is no possibility that a portion of the resonator end surface Sa1 may interfere with another structure and that the semiconductor laser element 10 may not be able to be bonded to an external component at a correct position and in a correct attitude. It is therefore possible, in the present embodiment, to suppress occurrence of a defect caused by a portion of the resonator end surface Sa1 sticking out from the side surface Sb2 of the submount 20.

[0050] In the present embodiment, the protrusion Pp1 is provided at a part, of the end edge of the resonator end surface Sa2, close to the lower electrode 19. Further, the cutout part Np1 is provided at a part, of the end edge of the resonator end surface Sa1, close to the lower electrode 19. This prevents a portion of the resonator end surface Sa1 from unintentionally sticking out from the side surface Sb2 of the submount 20. As a result, there is no possibility that a portion of the resonator end surface Sa1 may be brought into contact with another structure and be broken. Further, there is no possibility that a portion of the resonator end surface Sa1 may interfere with another structure and that the semiconductor laser element 10 may not be able to be bonded to an external component at a correct position and in a correct attitude. It is therefore possible, in the present embodiment, to suppress occurrence of a defect caused by a portion of the resonator end surface Sa1 sticking out from the side surface Sb2 of the submount 20.

[0051] In the present embodiment, the semiconductor laser element 10 is an edge-emitting laser that is able to emit laser light to the outside from the resonator end surface Sa1. The end edge of the resonator end surface Sa1 includes no protrusion protruding in the normal direction of the resonator end surface Sa1. Further, the cutout part Np1 functions as a region housing leaked solder 30. This eliminates a possibility that the protrusion protruding in the normal direction of the resonator end surface Sa1 or the leaked solder 30 may block laser light emitted from the resonator end surface Sa1. It is therefore possible, in the present embodiment, to suppress occurrence of a defect caused by the protrusion protruding in the normal direction of the resonator end surface Sa1 or the leaked solder 30.

[0052] In the present embodiment, the semiconductor laser element 10 is bonded to the submount 20. This allows heat generated by the semiconductor laser element 10 to be discharged to the outside via the submount 20. Here, in the present embodiment, there is no possibility that a portion of the resonator end surface Sa1 may interfere with another structure and that the semiconductor laser element 10 may not be able to be bonded to the submount 20 at a correct position and in a correct attitude. This enables the semiconductor laser element 10 to be bonded to the submount 20 at a correct position and in a correct attitude. As a result, it is possible to efficiently propagate heat generated by the semiconductor laser element 10 to the submount 20. It is therefore possible to suppress occurrence of a defect caused by a portion of the resonator end surface Sa1 sticking out from the side surface Sb2 of the submount 20.

[0053] In the present embodiment, in the manufacturing process, the blade 300 is pressed, for each of the scribe lines SL1, against a location shifted by the predetermined offset Δd from a position opposed to the scribe line SL1 to cleave the substrate 200. This allows for formation of the bar-shaped substrate 400 having the cleaved surfaces 230 and 240 opposed to each other. Further, in the bar-shaped substrate 400, the protrusion 240A protruding in the normal direction of the cleaved surface 240 is formed at a part, of the end edge of the cleaved surface 240, close to the blade 300. Further, the cutout part 230A is formed at a part, of the end edge of the cleaved surface 230, close to the blade 300. In this manner, in the present embodiment, no unintentional protrusion is formed on the cleaved surface 230, and the protrusion 240A is intentionally formed on the cleaved surface 240.

[0054] In the present embodiment, in the manufacturing process, the semiconductor laser element 10 is bonded to the mounting surface Sb1 of the submount 20 to allow the resonator end surface Sa1 to be disposed at a position near the side surface Sb2. Further, the semiconductor laser element 10 is bonded to the mounting surface Sb1 of the submount 20 to allow the resonator end surface Sa2 to be disposed at a position distant from the side surface Sb3, as compared with the distance between the resonator end surface Sa1 and the side surface Sb2. This prevents the protrusion Pp1 of the semiconductor laser element 10 from sticking out from the side surface Sb2 of the submount 20. In addition, the resonator end surface Sa1 of the semiconductor laser element 10 includes no protrusion sticking out from the side surface Sb2 of the submount 20. As a result, there is no possibility that the protrusion Pp1 or a portion of the resonator end surface Sa1 may be brought into contact with another structure and be broken. Further, there is no possibility that the protrusion Pp1 or a portion of the resonator end surface Sa1 may interfere with another structure and that the semiconductor laser element 10 may not be able to be bonded to an external component at a correct position and in a correct attitude. It is therefore possible, in the present embodiment, to suppress occurrence of a defect caused by the protrusion Pp1 or a portion of the resonator end surface Sa1 sticking out from the side surface Sb2 of the submount 20.

[0055] In the present embodiment, the offset Δd is a value within a range of 0.1 μm or more and 20 μm or less. Thus, pressing the blade 300 against the substrate 200 with moderate pressing force enables formation of the cutout part 230A at the end edge of the cleaved surface 230 as well as formation of the protrusion 240A at the end edge of the cleaved surface 240. As a result, it is possible to prevent unintentional formation of a protrusion on the cleaved surface 230. It is therefore possible, in the present embodiment, to suppress occurrence of a defect caused by an unintentional protrusion. 2. Modification Examples

[0056] Next, a description is given of modification examples of the light-emitting device 1 according to the foregoing embodiment. <Modification Example A>

[0057] In the foregoing embodiment, the end edge of the resonator end surface Sa2 of the semiconductor laser element 10 may be provided with a cutout part Np4, for example, as illustrated in Fig. 7. The cutout part Np4 corresponds to a specific example of a "second non-cleaved cutout part" according to an embodiment of the present disclosure. The cutout part Np4 is provided at a part, of the end edge of the resonator end surface Sa2, close to the lower electrode 19. The cutout part Np4 extends along the end edge of the resonator end surface Sa2. The cutout part Np4 extends in the width direction of the ridge part R. The cutout part Np4 is provided with a non-cleaved surface generated by dicing described later.

[0058] In the present modification example, a protrusion Pp2 is provided at a boundary part, of the resonator end surface Sa2, with respect to the cutout part Np4, for example, as illustrated in Fig. 7. The protrusion Pp2 corresponds to a specific example of the "non-cleaved protrusion" according to an embodiment of the present disclosure. The protrusion Pp2 extends along the end edge of the resonator end surface Sa2. The protrusion Pp2 extends in the width direction of the ridge part R. A surface, of the protrusion Pp2, in contact with the resonator end surface Sa2 is provided with a non-cleaved surface generated by blade break described later. The surface, of the protrusion Pp2, in contact with the resonator end surface Sa2 includes no cleaved surface. A height of the protrusion Pp2 from the resonator end surface Sa2 is, for example, a value within a range of 0.02 μm or more and 5 μm or less.

[0059] In the present modification example, the end edge of the resonator end surface Sa1 of the semiconductor laser element 10 is provided with a cutout part Np3, for example, as illustrated in Fig. 7. The cutout part Np3 corresponds to a specific example of a "first non-cleaved cutout part" according to an embodiment of the present disclosure. The cutout part Np3 is provided at a part, of the end edge of the resonator end surface Sa1, close to the lower electrode 19. The cutout part Np3 extends along the end edge of the resonator end surface Sa1. The cutout part Np3 extends in the width direction of the ridge part R. The cutout part Np3 is provided with a non-cleaved surface generated by dicing described later and blade break described later. The cutout part Np3 includes no cleaved surface. The resonator end surface Sa1 includes no protrusion protruding in the normal direction of the resonator end surface Sa1. That is, the resonator end surface Sa1 includes no protrusion sticking out from a plane including the side surface Sb2.

[0060] Next, a description is given of a method of manufacturing the light-emitting device 1 according to the present modification example. (A) of Fig. 8 illustrates an example of a manufacturing process of the light-emitting device 1 according to the present modification example. (B) of Fig. 8 illustrates an example of a cross-sectional configuration of the substrate 200 before cleavage in (A) of Fig. 8. (C) of Fig. 8 illustrates an example of a cross-sectional configuration of the substrate 200 after the cleavage in (A) of Fig. 8.

[0061] First, the substrate 200 is prepared (see (A) of Fig. 8). Next, for example, a dicer is used to dice a location, of the back surface 220 of the substrate 200, opposed to each of the scribe lines SL1. This allows for formation of a plurality of dicing lines DL each having a width of about several μm and a depth of about several μm ((A) of Fig. 8).

[0062] Next, as illustrated in (B) of Fig. 8, for example, the blade 300 is pressed against a location, of a bottom surface of the dicing line DL, shifted by the predetermined offset Δd from a position opposed to the scribe line SL1, thereby allowing for cleavage of the substrate 200. The offset Δd is, for example, a value within a range of 0.1 μm or more and 20 μm or less.

[0063] Subsequently, the cleavage of the substrate 200 is performed for each of the dicing lines DL by the method illustrated in (B) of Fig. 8. This allows for formation of the bar-shaped substrate 400 having the cleaved surfaces 230 and 240 opposed to each other (see (A) of Fig. 9). At this time, the plurality of external electrodes Ea is formed side by side in line on the top surface 410 of the bar-shaped substrate 400. Meanwhile, the plurality of lower electrodes 19 is formed side by side in line on the back surface 420 of the bar-shaped substrate 400.

[0064] At this time, the cleavage by the method illustrated in (B) of Fig. 8 allows for formation, in the substrate 200, of a cutout part 240B and a protrusion 240C at a part, of the end edge of the cleaved surface 240, close to the blade 300, for example, as illustrated in (C) of Fig. 8. The protrusion 240C protrudes in the normal direction of the cleaved surface 240. Further, a cutout part 230B is formed, in the substrate 200, at a part, of the end edge of the cleaved surface 230, close to the blade 300.

[0065] The cutout part 240B extends, in the bar-shaped substrate 400, in the longitudinal direction of the bar-shaped substrate 400, for example, as illustrated in (A) of Fig. 9. The cutout part 240B includes no cleaved surface. A depth of the cutout part 240B from the cleaved surface 240 is, for example, a value within a range of 0.02 μm or more and 5 μm or less. The protrusion 240C extends, in the bar-shaped substrate 400, in the longitudinal direction of the bar-shaped substrate 400, for example, as illustrated in (A) of Fig. 9. A surface, of the protrusion 240C, at a location in contact with the cleaved surface 240 includes no cleaved surface. A height of the protrusion 240C from the cleaved surface 240 is, for example, a value within a range of 0.02 μm or more and 5 μm or less. The cutout part 230B extends, in the bar-shaped substrate 400, in the longitudinal direction of the bar-shaped substrate 400, for example, as illustrated in (A) of Fig. 9. The cutout part 230B includes no cleaved surface. A depth of the cutout part 230B from the cleaved surface 230 is, for example, a value within a range of 0.02 μm or more and 5 μm or less.

[0066] Next, the multilayer reflective films La1 and La2 are formed on the pair of cleaved surfaces 230 and 240 of the bar-shaped substrate 400, for example, by means of a vacuum deposition method or a sputtering method. Next, the plurality of scribe lines SL2 is formed at a location, of the back surface 420 of the bar-shaped substrate 400, to be cleaved (see (A) of Fig. 9). Subsequently, the blade 500 is pressed against a location, of the top surface 410 of the bar-shaped substrate 400, to be cleaved, thereby allowing for cleavage of the bar-shaped substrate 400 (see (A) of Fig. 9). This allows for formation of the semiconductor laser element 10 having the resonator end surfaces Sa1 and Sa2 and the side surfaces Sa3 and Sa4, for example, as illustrated in (B) of Fig. 9.

[0067] Next, for example, a mounter is used to mount the semiconductor laser element 10 on the mounting surface Sb1 of the submount 20 (see (C) of Fig. 9). At this time, the semiconductor laser element 10 is bonded to the mounting surface Sb1 of the submount 20 to allow the resonator end surface Sa1 to be close to the side surface Sb2. Specifically, the semiconductor laser element 10 is bonded to the mounting surface Sb1 of the submount 20 to allow the resonator end surface Sa1 to be disposed at a position near the side surface Sb2. Further, the semiconductor laser element 10 is bonded to the mounting surface Sb1 of the submount 20 to allow the resonator end surface Sa2 to be disposed at a position distant from the side surface Sb3, as compared with the distance between the resonator end surface Sa1 and the side surface Sb2. As a result, the light-emitting device 1 is formed in which the semiconductor laser element 10 is mounted on the submount 20, for example, as illustrated in (D) of Fig. 9.

[0068] Next, a description is given of effects of the light-emitting device 1 according to the present modification example. In the present modification example, the end edge of the resonator end surface Sa2 of the semiconductor laser element 10 is provided with the cutout part Np4 and the protrusion Pp2. In the present modification example, the end edge of the resonator end surface Sa1 of the semiconductor laser element 10 is further provided with the cutout part Np3. This prevents a portion of the resonator end surface Sa1 from unintentionally sticking out from the side surface Sb2 of the submount 20. As a result, there is no possibility that a portion of the resonator end surface Sa1 may be brought into contact with another structure and be broken. Further, there is no possibility that a portion of the resonator end surface Sa1 may interfere with another structure and that the semiconductor laser element 10 may not be able to be bonded to an external component at a correct position and in a correct attitude. It is therefore possible, in the present modification example, to suppress occurrence of a defect caused by a portion of the resonator end surface Sa1 sticking out from the side surface Sb2 of the submount 20. <Modification Example B>

[0069] In the foregoing embodiment, as illustrated in Fig. 10, for example, an underfill 31 may be provided between the cutout part Np1 and the mounting surface Sb1. Further, the underfill 31 may be provided between the protrusion Pp1 and the mounting surface Sb1. The underfill 31 fills gaps between the cutout part Np1 and the mounting surface Sb1 and between the protrusion Pp1 and the mounting surface Sb1, and supports the protrusion Pp1. The underfill 31 is configured by a thermosetting resin, for example.

[0070] Next, a description is given of a method of manufacturing the light-emitting device 1 according to the present modification example. (A) of Fig. 11 illustrates an example of a manufacturing process of the light-emitting device 1 according to the present modification example. (A) of Fig. 11 illustrates an example of a manufacturing process subsequent to (B) of Fig. 6. (B) of Fig. 11 illustrates an example of a manufacturing process subsequent to (A) of Fig. 11. (C) of Fig. 11 illustrates an example of a manufacturing process subsequent to (B) of Fig. 11.

[0071] For example, a mounter is used to mount the semiconductor laser element 10 on the mounting surface Sb1 of the submount 20 (see (A) and (B) of Fig. 11). At this time, the semiconductor laser element 10 is bonded to the mounting surface Sb1 of the submount 20 to allow the resonator end surface Sa1 to be close to the side surface Sb2. Specifically, the semiconductor laser element 10 is bonded to the mounting surface Sb1 of the submount 20 to allow the resonator end surface Sa1 to be disposed at a position near the side surface Sb2. Further, the semiconductor laser element 10 is bonded to the mounting surface Sb1 of the submount 20 to allow the resonator end surface Sa2 to be disposed at a position distant from the side surface Sb3, as compared with the distance between the resonator end surface Sa1 and the side surface Sb2. Subsequently, the underfill 31 is formed between the cutout part Np1 and the mounting surface Sb1 and between the protrusion Pp1 and the mounting surface Sb1 ((C) of Fig. 11). In this manner, the light-emitting device 1 according to the present modification example is manufactured.

[0072] In the present modification example, the underfill 31 is provided between the cutout part Np1 and the mounting surface Sb1. Further, the underfill 31 is provided between the protrusion Pp1 and the mounting surface Sb1. This makes it possible to prevent the possibility of the protrusion Pp1 being broken, as compared with a case where there are air gaps between the cutout part Np1 and the mounting surface Sb1 and between the protrusion Pp1 and the mounting surface Sb1. As a result, it is possible to suppress occurrence of a defect caused by the protrusion Pp1. Further, it is possible, in the present modification example, to dissipate heat generated by the semiconductor laser element 10 to the submount 20 via the underfill 31. It is therefore possible, in the present modification example, to suppress deterioration of laser characteristics of the semiconductor laser element 10 by utilizing the protrusion Pp1 and the underfill 31. <Modification Example C>

[0073] In the foregoing Modification Example A, the underfill 31 may be provided between the cutout part Np3 and the mounting surface Sb1, between the cutout part Np4 and the mounting surface Sb1, and between the protrusion Pp2 and the mounting surface Sb1, for example, as illustrated in Fig. 12. The underfill 31 fills gaps between the cutout part Np3 and the mounting surface Sb1, between the cutout part Np4 and the mounting surface Sb1, and between the protrusion Pp2 and the mounting surface Sb1, and supports the protrusion Pp2. The underfill 31 is configured by a thermosetting resin, for example.

[0074] Next, a description is given of a method of manufacturing the light-emitting device 1 according to the present modification example. (A) of Fig. 13 illustrates an example of a manufacturing process of the light-emitting device 1 according to the present modification example. (A) of Fig. 13 illustrates an example of a manufacturing process subsequent to (B) of Fig. 9. (B) of Fig. 13 illustrates an example of a manufacturing process subsequent to (A) of Fig. 13. (C) of Fig. 13 illustrates an example of a manufacturing process subsequent to (B) of Fig. 13.

[0075] For example, a mounter is used to mount the semiconductor laser element 10 on the mounting surface Sb1 of the submount 20 (see (A) and (B) of Fig. 13). At this time, the semiconductor laser element 10 is bonded to the mounting surface Sb1 of the submount 20 to allow the resonator end surface Sa1 to be close to the side surface Sb2. Specifically, the semiconductor laser element 10 is bonded to the mounting surface Sb1 of the submount 20 to allow the resonator end surface Sa1 to be disposed at a position near the side surface Sb2. Further, the semiconductor laser element 10 is bonded to the mounting surface Sb1 of the submount 20 to allow the resonator end surface Sa2 to be disposed at a position distant from the side surface Sb3, as compared with the distance between the resonator end surface Sa1 and the side surface Sb2. Subsequently, the underfill 31 is formed between the cutout part Np3 and the mounting surface Sb1, between the cutout part Np4 and the mounting surface Sb1, and between the protrusion Pp2 and the mounting surface Sb1 ((C) of Fig. 13). In this manner, the light-emitting device 1 according to the present modification example is manufactured.

[0076] In the present modification example, the underfill 31 is provided between the cutout part Np3 and the mounting surface Sb1, between the cutout part Np4 and the mounting surface Sb1, and between the protrusion Pp2 and the mounting surface Sb1. This makes it possible to prevent the possibility of the protrusion Pp2 being broken, as compared with a case where there are air gaps between the cutout part Np3 and the mounting surface Sb1, between the cutout part Np4 and the mounting surface Sb1, and between the protrusion Pp2 and the mounting surface Sb1. As a result, it is possible to suppress occurrence of a defect caused by the protrusion Pp2. Further, it is possible, in the present modification example, to dissipate heat generated by the semiconductor laser element 10 to the submount 20 via the underfill 31. It is therefore possible, in the present modification example, to suppress deterioration of laser characteristics of the semiconductor laser element 10 by utilizing the protrusion Pp2 and the underfill 31. <Modification Example D>

[0077] In the foregoing embodiment, the side surface of the semiconductor laser element 10 may be provided with a protrusion Pp3 and a cutout part Np5 instead of the protrusion Pp1 and the cutout part Np1, for example, as illustrated in Fig. 14.

[0078] The protrusion Pp3 corresponds to a specific example of the "non-cleaved protrusion" according to an embodiment of the present disclosure. The cutout part Np5 corresponds to a specific example of the "non-cleaved cutout part" according to an embodiment of the present disclosure. In the present modification example, the side surface Sa3 corresponds to a specific example of the "first cleaved surface" according to an embodiment of the present disclosure. In the present modification example, the side surface Sa4 corresponds to a specific example of the "second cleaved surface" according to an embodiment of the present disclosure. The resonator end surface Sa1 corresponds to a specific example of a "third cleaved surface" according to an embodiment of the present disclosure. The resonator end surface Sa2 corresponds to a specific example of a "fourth cleaved surface" according to an embodiment of the present disclosure.

[0079] The protrusion Pp3 is provided on the side surface Sa4. The protrusion Pp3 is provided at a part, of an end edge of the side surface Sa4, close to the external electrode Ea. The protrusion Pp3 extends along the end edge of the side surface Sa4. The protrusion Pp3 extends in the width direction of the ridge part R. A surface, of the protrusion Pp3, in contact with the side surface Sa4 is provided with a non-cleaved surface generated by blade break described later. The surface, of the protrusion Pp3, in contact with the side surface Sa4 includes no cleaved surface. A height of the protrusion Pp3 from the side surface Sa4 is, for example, a value within a range of 0.1 μm or more and 5 μm or less.

[0080] The cutout part Np5 is provided on the side surface Sa3. The cutout part Np5 is provided at a part, of an end edge of the side surface Sa3, close to the external electrode Ea. The cutout part Np5 extends along the end edge of the side surface Sa3. The cutout part Np5 extends in the width direction of the ridge part R. A surface, of the cutout part Np5, in contact with the side surface Sa3 is provided with a non-cleaved surface generated by blade break described later. The surface, of the cutout part Np5, in contact with the side surface Sa3 includes no cleaved surface. A height of the cutout part Np5 from the side surface Sa3 is, for example, a value within a range of 0.1 μm or more and 5 μm or less.

[0081] Next, a description is given of a method of manufacturing the light-emitting device 1 according to the present modification example. (A) of Fig. 15 illustrates an example of a manufacturing process of the light-emitting device 1 according to the present modification example. (B) of Fig. 15 illustrates an example of a manufacturing process subsequent to (A) of Fig. 15. (A) of Fig. 16 illustrates an example of a manufacturing process subsequent to (B) of Fig. 15. (B) of Fig. 16 illustrates an example of a cross-sectional configuration of the bar-shaped substrate 400 before cleavage in (A) of Fig. 16. (C) of Fig. 16 illustrates an example of a cross-sectional configuration of the bar-shaped substrate 400 after the cleavage in (A) of Fig. 16. (D) of Fig. 16 illustrates an example of a manufacturing process subsequent to (A) of Fig. 16. (A) of Fig. 17 illustrates an example of a manufacturing process subsequent to (D) of Fig. 16. (B) of Fig. 17 illustrates an example of a manufacturing process subsequent to (A) of Fig. 17.

[0082] First, the substrate 200 is prepared (see (A) of Fig. 15). Next, the substrate 200 is cleaved using the blade 300, for example (see (A) of Fig. 15). This allows for formation of the bar-shaped substrate 400 having the cleaved surfaces 230 and 240 opposed to each other (see (B) of Fig. 15). At this time, the plurality of external electrodes Ea is formed side by side in line on the top surface 410 of the bar-shaped substrate 400. Meanwhile, the plurality of lower electrodes 19 is formed side by side in line on the back surface 420 of the bar-shaped substrate 400. The cleaved surfaces 230 and 240 correspond to a specific example of a "cleaved surface" according to an embodiment of the present disclosure. The bar-shaped substrate 400 corresponds to a specific example of the "bar-shaped substrate" according to an embodiment of the present disclosure.

[0083] Next, the multilayer reflective films La1 and La2 are formed on the cleaved surfaces 230 and 240 of the bar-shaped substrate 400, for example, by means of a vacuum deposition method or a sputtering method. Next, the plurality of scribe lines SL2 is formed at a location, of the back surface 420 of the bar-shaped substrate 400, to be cleaved (see (A) of Fig. 16).

[0084] Next, the bar-shaped substrate 400 is cleaved using the blade 500, for example, as illustrated in (A) of Fig. 16. The blade 500 corresponds to a specific example of the "blade" according to an embodiment of the present disclosure. As illustrated in (B) of Fig. 16, for example, the blade 500 is pressed against a location, of the top surface 410 of the bar-shaped substrate 400, shifted by the predetermined offset Δd from a position opposed to the scribe line SL2, thereby allowing for cleavage of the bar-shaped substrate 400. The offset Δd is, for example, a value within a range of 0.1 μm or more and 20 μm or less.

[0085] Subsequently, the cleavage of the bar-shaped substrate 400 is performed for each of the scribe lines SL2 by the method illustrated in (B) of Fig. 16. This allows for formation of the semiconductor laser element 10 having a portion of the cleaved surfaces 230 and 240 (resonator end surfaces Sa1 and Sa2) and newly formed cleaved surfaces (side surfaces Sa3 and Sa4), for example, as illustrated in (D) of Fig. 16.

[0086] At this time, the cleavage by the method illustrated in (C) of Fig. 16 allows for formation, in the bar-shaped substrate 400, of the protrusion Pp3 at a part, of the end edge of the cleaved surface (side surface Sa4), close to the blade 500, for example, as illustrated in (D) of Fig. 16. The protrusion Pp3 protrudes in a normal direction of the cleaved surface (side surface Sa4). Further, the cutout part Np5 is formed, in the bar-shaped substrate 400, at a part, of the end edge of the cleaved surface (side surface Sa3), close to the blade 500.

[0087] Next, for example, a mounter is used to mount the semiconductor laser element 10 on the mounting surface Sb1 of the submount 20 (see (A) of Fig. 17). At this time, the semiconductor laser element 10 is bonded to the mounting surface Sb1 of the submount 20 to allow the resonator end surface Sa1 to be close to the side surface Sb2. Specifically, the semiconductor laser element 10 is bonded to the mounting surface Sb1 of the submount 20 to allow the resonator end surface Sa1 to be disposed at a position near the side surface Sb2. Further, the semiconductor laser element 10 is bonded to the mounting surface Sb1 of the submount 20 to allow the resonator end surface Sa2 to be disposed at a position distant from the side surface Sb3, as compared with the distance between the resonator end surface Sa1 and the side surface Sb2. As a result, the light-emitting device 1 is formed in which the semiconductor laser element 10 is mounted on the submount 20, for example, as illustrated in (B) of Fig. 17.

[0088] Next, a description is given of effects of the light-emitting device 1 according to the present modification example. In the present modification example, the end edge of the side surface Sa3 of the semiconductor laser element 10 is provided with the cutout part Np5. In addition, the end edge of the side surface Sa4 of the semiconductor laser element 10 is provided with the protrusion Pp3 protruding in a normal direction of the side surface Sa4. This prevents a portion of the side surface Sa3 from unintentionally sticking out from the side surface Sb4 of the submount 20. As a result, there is no possibility that a portion of the side surface Sa3 may be brought into contact with another structure and be broken. Further, there is no possibility that a portion of the side surface Sa3 may interfere with another structure and that the semiconductor laser element 10 may not be able to be bonded to an external component at a correct position and in a correct attitude. It is therefore possible, in the present modification example, to suppress occurrence of a defect caused by a portion of the side surface Sa3 sticking out from the side surface Sb4 of the submount 20.

[0089] In the present modification example, the semiconductor laser element 10 is an edge-emitting laser that is able to emit laser light to the outside from the resonator end surface Sa1. The end edge of the resonator end surface Sa1 includes no protrusion protruding in the normal direction of the resonator end surface Sa1. This eliminates a possibility that the protrusion protruding in the normal direction of the resonator end surface Sa1 may block laser light emitted from the resonator end surface Sa1. It is therefore possible, in the present modification example, to suppress occurrence of a defect caused by the protrusion protruding in the normal direction of the resonator end surface Sa1.

[0090] In the present modification example, in the manufacturing process, the blade 500 is pressed, for each of the scribe lines SL2, against a location shifted by the predetermined offset Δd from a position opposed to the scribe line SL2 to cleave the bar-shaped substrate 400. This allows for formation of the semiconductor laser element 10 having a portion of the cleaved surfaces 230 and 240 (resonator end surfaces Sa1 and Sa2) and the cleaved surfaces (side surfaces Sa3 and Sa4). Further, in the bar-shaped substrate 400, the protrusion Pp3 protruding in the normal direction of the cleaved surface (side surface Sa4) is formed at a part, of the end edge of the cleaved surface (side surface Sa4), close to the blade 500. Further, the cutout part Np5 is formed at a part, of the end edge of the cleaved surface (side surface Sa3), close to the blade 500. In this manner, in the present modification example, no unintentional protrusion is formed on the cleaved surface (side surface Sa3), and the protrusion Pp3 is intentionally formed on the cleaved surface (side surface Sa4).

[0091] In the present modification example, in the manufacturing process, the semiconductor laser element 10 is bonded to the mounting surface Sb1 of the submount 20 to allow the cleaved surface (side surface Sa3) to be disposed at a position near the side surface Sb4. Further, the semiconductor laser element 10 is bonded to the mounting surface Sb1 of the submount 20 to allow the cleaved surface (side surface Sa4) to be disposed at a position distant from the side surface Sb5, as compared with a distance between the cleaved surface (side surface Sa3) and the side surface Sb4. This prevents the protrusion Pp3 of the semiconductor laser element 10 from sticking out from the side surface Sb4 of the submount 20. In addition, the cleaved surface (side surface Sa3) of the semiconductor laser element 10 includes no protrusion sticking out from the side surface Sb4 of the submount 20. As a result, there is no possibility that the protrusion Pp3 or a portion of the cleaved surface (side surface Sa3) may be brought into contact with another structure and be broken. Further, there is no possibility that the protrusion Pp3 or a portion of the cleaved surface (side surface Sa3) may interfere with another structure and that the semiconductor laser element 10 may not be able to be bonded to an external component at a correct position and in a correct attitude. It is therefore possible, in the present modification example, to suppress occurrence of a defect caused by the protrusion Pp3 or a portion of the cleaved surface (side surface Sa3) sticking out from the side surface Sb2 of the submount 20.

[0092] In the present modification example, the offset Δd is a value within a range of 0.1 μm or more and 20 μm or less. Thus, pressing the blade 500 against the bar-shaped substrate 400 with moderate pressing force enables formation of the cutout part Np5 at the end edge of the cleaved surface (side surface Sa3). Further, it is possible to form the protrusion Pp3 at the end edge of the cleaved surface (side surface Sa4). As a result, it is possible to prevent unintentional formation of a protrusion on the cleaved surface (side surface Sa3). It is therefore possible, in the present modification example, to suppress occurrence of a defect caused by an unintentional protrusion. <Modification Example E>

[0093] In the foregoing Modification Example D, the light-emitting device 1 may include an adjacency 40 on the mounting surface Sb1 of the submount 20, for example, as illustrated in Figs. 18 and 19. The adjacency 40 is bonded to a region, of the mounting surface Sb1, between the cleaved surface (side surface Sa3) and the side surface Sb4 of the submount 20.

[0094] The mounting surface Sb1 is provided with a coupling pad Ed. A coupling pad 41 is provided on a surface, of the adjacency 40, close to the mounting surface Sb1. The coupling pad 41 is bonded to the coupling pad Ed with the solder 30 interposed therebetween. The coupling pad Ed includes, for example, Ti, Pt, and Au, in this order, from a side closer to the mounting surface Sb1. The coupling pad 41 includes, for example, Ti, Pt, and Au, in this order, from a side more distant from the mounting surface Sb1.

[0095] The adjacency 40 is used, for example, for positioning at the time when the semiconductor laser element 10 is mounted on the submount 20. The adjacency 40 is configured by, for example, Si, GaAs, GaN, or the like.

[0096] In the present modification example, the adjacency 40 is bonded to a region, of the mounting surface Sb1, between the cleaved surface (side surface Sa3) and the side surface Sb4 of the submount 20. Even in such a case, a portion of the side surface Sa3 is not unintentionally brought into contact with the adjacency 40. As a result, there is no possibility that a portion of the side surface Sa3 may be brought into contact with the adjacency 40 and be broken. Further, there is no possibility that a portion of the side surface Sa3 may interfere with the adjacency 40 and that the semiconductor laser element 10 may not be able to be bonded to the submount 20 at a correct position and in a correct attitude. It is therefore possible, in the present modification example, to suppress occurrence of a defect caused by a portion of the side surface Sa3 being brought into contact with the adjacency 40. <Modification Example F>

[0097] In the foregoing embodiment and Modification Examples A to E, a heat sink 50 may be provided instead of the submount 20, for example, as illustrated in Fig. 20.

[0098] In the same manner as the submount 20, the heat sink 50 includes, on the surface, the mounting surface Sb1, the side surface Sb2, the side surface Sb3, and the side surfaces Sb4 and Sb5, for example, as illustrated in Fig. 20. In the heat sink 50, the mounting surface Sb1 is provided with the coupling electrode Ec and the external electrode Eb. The heat sink 50 is configured by, for example, Cu, Fe, Al, Au, W, Mo, or a composite material including these materials such as Cu-W or Cu-Mo.

[0099] In this manner, in the present modification example, the heat sink 50 is provided instead of the submount 20. Also in such a case, the semiconductor laser element 10 is able to be bonded to an external component via the heat sink 50.

[0100] Although the present disclosure has been described above with reference to the embodiment, the modification examples thereof, and the application example, the present disclosure is not limited to the embodiment and the like described above, and may be modified in a wide variety of ways. It is to be noted that the effects described herein are merely exemplary. The effects of the present disclosure are not limited to the effects described herein. The present disclosure may have effects other than the effects described herein.

[0101] In addition, for example, the present disclosure may have the following configurations. (1) A light-emitting device including: a semiconductor laser element including a semiconductor layer provided with a first cleaved surface and a second cleaved surface opposed to each other, the semiconductor laser element having a first surface and a second surface opposed to each other with the semiconductor layer interposed therebetween in a direction intersecting normal lines of the first cleaved surface and the second cleaved surface; and a bonding object having a mounting surface to which the second surface is bonded, the bonding object having a third surface and a fourth surface opposed to each other in a direction intersecting a normal line of the mounting surface, in which the first cleaved surface is disposed at a position near the third surface, the second cleaved surface is disposed at a position distant from the fourth surface, as compared with a distance between the first cleaved surface and the third surface, an end edge of the first cleaved surface includes no protrusion protruding in a direction of the normal line of the first cleaved surface, and an end edge of the second cleaved surface is provided with a non-cleaved protrusion protruding in a direction of the normal line of the second cleaved surface. (2) The light-emitting device according to (1), in which the non-cleaved protrusion is provided at a part, of the end edge of the second cleaved surface, close to the second surface, and a non-cleaved cutout part is provided at a part, of the end edge of the first cleaved surface, close to the second surface. (3) The light-emitting device according to (1), in which a first non-cleaved cutout part is provided at a part, of the end edge of the first cleaved surface, close to the second surface, a second non-cleaved cutout part is provided at a part, of the end edge of the second cleaved surface, close to the second surface, and the non-cleaved protrusion is provided at a boundary part, of the second cleaved surface, with respect to the second non-cleaved cutout part. (4) The light-emitting device according to (1), in which the non-cleaved protrusion is provided at a part, of the end edge of the second cleaved surface, close to the first surface, and a non-cleaved cutout part is provided at a part, of the end edge of the first cleaved surface, close to the first surface. (5) The light-emitting device according to (2), further including an underfill provided in gaps between the non-cleaved protrusion and the mounting surface and between the non-cleaved cutout part and the mounting surface. (6) The light-emitting device according to (3), further including an underfill provided in gaps between the non-cleaved protrusion and the mounting surface, between the first non-cleaved cutout part and the mounting surface, and between the second non-cleaved cutout part and the mounting surface. (7) The light-emitting device according to (2) or (3), in which the semiconductor laser element includes an edge-emitting laser configured to emit light to an outside from the first cleaved surface. (8) The light-emitting device according to (4), in which the semiconductor layer is provided with a third cleaved surface and a fourth cleaved surface opposed to each other in a direction intersecting the normal lines of the first cleaved surface and the second cleaved surface, and the semiconductor laser element includes an edge-emitting laser configured to emit light to an outside from the third cleaved surface. (9) The light-emitting device according to (8), further including an adjacency bonded to a region, of the mounting surface, between the first cleaved surface and the third surface. (10) The light-emitting device according to any one of (1) to (9), in which the bonding object includes a submount or a heat sink. (11) A method of manufacturing a light-emitting device including a bonding object and a semiconductor laser element, the bonding object having a mounting surface and a first side surface and a second side surface opposed to each other in a direction intersecting a normal line of the mounting surface, the method including: forming a semiconductor layer on a substrate; forming a bar-shaped substrate having a first cleaved surface and a second cleaved surface opposed to each other by pressing a blade, for each of scribe lines, against a location shifted by a predetermined offset from a position opposed to each of the scribe lines to cleave the substrate and the semiconductor layer; forming, in the bar-shaped substrate, a non-cleaved protrusion at a part, of an end edge of the second cleaved surface, close to the blade, the non-cleaved protrusion protruding in a direction of a normal line of the second cleaved surface; forming a non-cleaved cutout part at a part, of an end edge of the first cleaved surface, close to the blade; forming the semiconductor laser element by cleaving the bar-shaped substrate; and bonding the semiconductor laser element to the mounting surface to allow the first cleaved surface to be disposed at a position near the first side surface and to allow the second cleaved surface to be disposed at a position distant from the second side surface, as compared with a distance between the first cleaved surface and the first side surface. (12) The method of manufacturing the light-emitting device according to (11), in which the offset includes a value within a range of 0.1 μm or more and 20 μm or less. (13) The method of manufacturing the light-emitting device according to (11) or (12), further including forming an underfill in gaps between the non-cleaved protrusion and the mounting surface and between the non-cleaved cutout part and the mounting surface. (14) A method of manufacturing a light-emitting device including a bonding object and a semiconductor laser element, the bonding object having a mounting surface and a first side surface and a second side surface opposed to each other in a direction intersecting a normal line of the mounting surface, the method including: forming a semiconductor layer on a substrate; forming a bar-shaped substrate having a pair of cleaved surfaces opposed to each other by cleaving the substrate and the semiconductor layer; forming the semiconductor laser element having a portion of the pair of cleaved surfaces and a first cleaved surface and a second cleaved surface, which are newly formed and are opposed to each other, by pressing a blade, for each of scribe lines, against a location shifted by a predetermined offset from a position opposed to each of the scribe lines to cleave the bar-shaped substrate; forming, in the semiconductor laser element, a non-cleaved protrusion at a part, of an end edge of the second cleaved surface, close to the blade, the non-cleaved protrusion protruding in a direction of a normal line of the second cleaved surface; forming a non-cleaved cutout part at a part, of an end edge of the first cleaved surface, close to the blade; and bonding the semiconductor laser element to the mounting surface to allow the first cleaved surface to be disposed at a position near the first side surface and to allow the second cleaved surface to be disposed at a position distant from the second side surface, as compared with a distance between the first cleaved surface and the first side surface. (15) The method of manufacturing the light-emitting device according to (14), in which the offset includes a value within a range of 0.1 μm or more and 20 μm or less. (16) A semiconductor device comprising a light-emitting element which includes a resonator end surface, and a protrusion from the resonator end surface extending in a normal direction from the resonator end surface, disposed along at least a portion of the resonator end surface, and a block including a top mounting surface and four side surfaces which are disposed orthogonally to the top mounting surface and orthogonally to one another, wherein the light-emitting element is mounted to the top mounting surface in an orientation such that the protrusion is disposed fully within a region bounded by four planes defined, respectively, by the four side surfaces. (17) The semiconductor device according to (16), wherein the protrusion is disposed across an entire length of the resonator end surface along an axis coplanar to the resonator end surface and substantially parallel to the top mounting surface. (18) The semiconductor device according to (16) or (17), wherein the protrusion includes a substantially prismatic end profile. (19) The semiconductor device according to (16) to (18), wherein the light-emitting element is a laser. (20) The semiconductor device according to (16) to (19), wherein the protrusion is disposed along an edge of the resonator end surface which is closest to the mounting surface. (21) The semiconductor device according to (16) to (19), wherein the protrusion is disposed along an edge of the resonator end surface which is farthest from the mounting surface. (22) The semiconductor device according to (16) to (21), further comprising a second element mounted to the mounting surface substantially adjacent to the light-emitting element. (23) The semiconductor device according to (22), wherein the protrusion extends in a direction which is opposite from the second element. (24) The semiconductor device according to (16) to (23), wherein the protrusion extends from the resonator end surface by a distance between 0.02 micrometers (μm) and 5 μm. (25) The semiconductor device according to (16) to (24), wherein the resonator end surface is coated in a reflective film. (26) The semiconductor device according to (16) to (25), wherein the block is a submount. (27) The semiconductor device according to (16) to (26), wherein the block is a heat sink. (28) The semiconductor device according to (16) to (27), further comprising a second resonator end surface opposed to the resonator end surface and a cutout portion of the second resonator end surface disposed along an edge of the resonator end surface which is substantially parallel to the mounting surface. (29) The semiconductor device according to (28), wherein the cutout portion includes a substantially prismatic end profile. (30) The semiconductor device according to (28) or (29), wherein the cutout portion includes a substantially curved end profile. (31) The semiconductor device according to (28) to (30), wherein the cutout portion is at least partially filled with solder. (32) The semiconductor device according to (28) to (31), wherein an underfill is provided between the mounting surface and the cutout portion. (33) The semiconductor device according to (32), wherein the underfill includes a thermosetting resin. (34) The semiconductor device according to (16) to (32), wherein an underfill is provided between the mounting surface and the protrusion. (35) The semiconductor device according to (34), wherein the underfill includes a thermosetting resin.

[0102] In the light-emitting device according to a first aspect of the present disclosure, the end edge of the first cleaved surface of the semiconductor laser element includes no protrusion protruding in the normal direction of the first cleaved surface. In addition, the end edge of the second cleaved surface of the semiconductor laser element is provided with the non-cleaved protrusion protruding in the normal direction of the second cleaved surface. This prevents a portion of the first cleaved surface from unintentionally sticking out from the third surface of the bonding object. As a result, there is no possibility that a portion of the first cleaved surface may be brought into contact with another structure and be broken. Further, there is no possibility that a portion of the first cleaved surface may interfere with another structure and that the semiconductor laser element may not be able to be bonded to an external component at a correct position and in a correct attitude. It is therefore possible, in the present embodiment, to suppress occurrence of a defect caused by a portion of the first cleaved surface sticking out from the third surface of the bonding object.

[0103] In the method of manufacturing the semiconductor laser according to a second aspect of the present disclosure, the blade is pressed, for each of the scribe lines, against a location shifted by the predetermined offset from a position opposed to the scribe line to cleave the substrate and the semiconductor layer. This allows for formation of the bar-shaped substrate having the first cleaved surface and the second cleaved surface opposed to each other. Further, in the bar-shaped substrate, the non-cleaved protrusion is formed at a part, of the end edge of the second cleaved surface, close to the blade. The non-cleaved protrusion protrudes in the normal direction of the second cleaved surface. Further, the non-cleaved cutout part is formed at a part, of the end edge of the first cleaved surface, close to the blade. In this manner, in the present disclosure, no unintentional protrusion is formed on the first cleaved surface, and the non-cleaved protrusion is intentionally formed on the second cleaved surface.

[0104] In addition, in the present disclosure, in the manufacturing process, the semiconductor laser element is bonded to the mounting surface of the mounting object to allow the first cleaved surface to be disposed at a position near the first side surface and to allow the second cleaved surface to be disposed at a position distant from the second side surface, as compared with a distance between the first cleaved surface and the first side surface. This prevents the non-cleaved protrusion of the semiconductor laser element from sticking out from the first side surface of the bonding object. In addition, the first cleaved surface of the semiconductor laser element includes no protrusion sticking out from the first side surface of the bonding object. As a result, there is no possibility that a portion of the first cleaved surface or the non-cleaved protrusion may be brought into contact with another structure and be broken. Further, there is no possibility that a portion of the first cleaved surface or the non-cleaved protrusion may interfere with another structure and that the semiconductor laser element may not be able to be bonded to an external component at a correct position and in a correct attitude. It is therefore possible, in the present disclosure, to suppress occurrence of a defect caused by a portion of the first cleaved surface or the non-cleaved protrusion sticking out from the first side surface of the bonding object.

[0105] In the method of manufacturing the semiconductor laser according to a third aspect of the present disclosure, the blade is pressed, for each of the scribe lines, against a location shifted by the predetermined offset from a position opposed to the scribe line to cleave the bar-shaped substrate. This allows for formation of a semiconductor laser element having a portion of the pair of cleaved surfaces and the first cleaved surface and the second cleaved surface which are newly formed and are opposed to each other. Further, in the semiconductor laser element, the non-cleaved protrusion is formed at a part, of the end edge of the second cleaved surface, close to the blade. The non-cleaved protrusion protrudes in the normal direction of the second cleaved surface. Further, the non-cleaved cutout part is formed at a part, of the end edge of the first cleaved surface, close to the blade. In this manner, in the present disclosure, no unintentional protrusion is formed on the first cleaved surface, and the non-cleaved protrusion is intentionally formed on the second cleaved surface.

[0106] In addition, in the present disclosure, in the manufacturing process, the semiconductor laser element is bonded to the mounting surface to allow the first cleaved surface to be disposed at a position near the first side surface and to allow the second cleaved surface to be disposed at a position distant from the second side surface, as compared with the distance between the first cleaved surface and the first side surface. This prevents the non-cleaved protrusion of the semiconductor laser element from sticking out from the first side surface of the bonding object. In addition, the first cleaved surface of the semiconductor laser element includes no protrusion sticking out from the first side surface of the bonding object. As a result, there is no possibility that a portion of the first cleaved surface or the non-cleaved protrusion may be brought into contact with another structure and be broken. Further, there is no possibility that a portion of the first cleaved surface or the non-cleaved protrusion may interfere with another structure and that the semiconductor laser element may not be able to be bonded to an external component at a correct position and in a correct attitude. It is therefore possible, in the present disclosure, to suppress occurrence of a defect caused by a portion of the first cleaved surface or the non-cleaved protrusion sticking out from the first side surface of the bonding object.

[0107] It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and alterations may occur depending on design requirements and other factors insofar as they are within the scope of the appended claims or the equivalents thereof.Reference Numerals List

[0108] 1 light-emitting device 10 semiconductor laser element 11 substrate 12 semiconductor layer 12A semiconductor layer 13 lower clad layer 14 active layer 15 upper clad layer 16 contact layer 17 insulating film 18 upper electrode 19 lower electrode 20 submount 30 solder 31 underfill 40 adjacency 50 heat sink 100, 200 substrate 210, 410 top surface 220, 420 back surface 230, 240 cleaved surface 230A, 230B cutout part 240A, 240C protrusion 300, 500 blade 400 bar-shaped substrate DL dicing line Ea, Eb external electrode Ec coupling electrode La1, La2 multilayer reflective film Np1, Np3, Np4, Np5 cutout part Pp1, Pp2, Pp3 protrusion R ridge part Sa1, Sa2 resonator end surface Sa3, Sa4 side surface Sb1 mounting surface Sb2, Sb3, Sb4, Sb5 side surface SL1, SL2 scribe line Δd offset

Claims

1. A semiconductor device, comprising: a light-emitting element which includes: a resonator end surface, and a protrusion from the resonator end surface extending in a normal direction from the resonator end surface, disposed along at least a portion of the resonator end surface; and a block including a top mounting surface and four side surfaces which are disposed orthogonally to the top mounting surface and orthogonally to one another, wherein the light-emitting element is mounted to the top mounting surface in an orientation such that the protrusion is disposed fully within a region bounded by four planes defined, respectively, by the four side surfaces.

2. The semiconductor device of claim 1, wherein the protrusion is disposed across an entire length of the resonator end surface along an axis coplanar to the resonator end surface and substantially parallel to the top mounting surface.

3. The semiconductor device of claim 1, wherein the protrusion includes a substantially prismatic end profile.

4. The semiconductor device of claim 1, wherein the light-emitting element is a laser.

5. The semiconductor device of claim 1, wherein the protrusion is disposed along an edge of the resonator end surface which is closest to the mounting surface.

6. The semiconductor device of claim 1, wherein the protrusion is disposed along an edge of the resonator end surface which is farthest from the mounting surface.

7. The semiconductor device of claim 1, further comprising a second element mounted to the mounting surface substantially adjacent to the light-emitting element.

8. The semiconductor device of claim 7, wherein the protrusion extends in a direction which is opposite from the second element.

9. The semiconductor device of claim 1, wherein the protrusion extends from the resonator end surface by a distance between 0.02 micrometers (μm) and 5 μm.

10. The semiconductor device of claim 1, wherein the resonator end surface is coated in a reflective film.

11. The semiconductor device of claim 1, wherein the block is a submount.

12. The semiconductor device of claim 1, wherein the block is a heat sink.

13. The semiconductor device of claim 1, further comprising: a second resonator end surface opposed to the resonator end surface; and a cutout portion of the second resonator end surface disposed along an edge of the resonator end surface which is substantially parallel to the mounting surface.

14. The semiconductor device of claim 13, wherein the cutout portion includes a substantially prismatic end profile.

15. The semiconductor device of claim 13, wherein the cutout portion includes a substantially curved end profile.

16. The semiconductor device of claim 13, wherein the cutout portion is at least partially filled with solder.

17. The semiconductor device of claim 13, wherein an underfill is provided between the mounting surface and the cutout portion.

18. The semiconductor device of claim 17, wherein the underfill includes a thermosetting resin.

19. The semiconductor device of claim 1, wherein an underfill is provided between the mounting surface and the protrusion.

20. The semiconductor device of claim 19, wherein the underfill includes a thermosetting resin.

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