Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method for producing semiconductor device

By optimizing the reflectance spectrum and material composition of multilayer reflective films in EUV lithography masks, the light intensity on the transfer object is enhanced, addressing the challenges of high throughput and precision in semiconductor manufacturing.

WO2026141184A1PCT designated stage Publication Date: 2026-07-02HOYA CORPORATION
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
HOYA CORPORATION
Filing Date
2025-12-19
Publication Date
2026-07-02

AI Technical Summary

Technical Problem

Existing EUV lithography processes for semiconductor manufacturing face challenges in achieving high light intensity and precision, particularly due to insufficient consideration of light intensity on the transfer object in reflective masks with multilayer reflective films.

Method used

The design of multilayer reflective films with specific slope and center wavelength ranges, along with protective films, enhances light intensity on the transfer object by optimizing the reflectance spectrum, using materials like Si and Mo for high and low refractive index layers, and incorporating carbon-containing intermediate layers to suppress material diffusion.

Benefits of technology

This approach increases the light intensity on the transfer object, improving the throughput and precision of EUV lithography processes for semiconductor devices.

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Abstract

The present invention provides a substrate with multilayer reflective film for obtaining a reflective mask that can achieve a higher intensity (quantity) of exposure light on a body to be transferred in an EUV lithography process for producing a semiconductor device.　A substrate with a multilayer reflective film according to the present invention comprises a substrate and a multilayer reflective film, said substrate being characterized in that on a surface of the substrate with a multilayer reflective film, the inclination dR of a reflectance spectrum R(λ) indicating the relationship between the wavelength λ of incident light and the reflectance R is represented by dR = (R2 - R1) / (λ2 - λ1), and the inclination dR is -41.5 % / nm to 14.5 % / nm. (In the formula of the inclination dR, the wavelength λ1 is 13.525 nm, the wavelength λ2 is 13.550 nm, R1 is a reflectance R(λ1) at the wavelength λ1 on the surface of the substrate with a multilayer reflective film, and R2 is a reflectance R(λ2) at the wavelength λ2 on the surface of the substrate with a multilayer reflective film.)
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