Method for forming electrode and method for forming capacitor by using same

Abstract

The present invention provides a method for forming an electrode including a first layer and a second layer on a substrate, the method comprising the steps of: forming the first layer on the substrate; and forming the second layer on the first layer, wherein the first layer contains Ru, and the second layer contains an oxide of Ru (RuO).

Description

Method for forming electrodes and method for forming a capacitor using the same

[0001] The present invention relates to a method for forming an electrode and a method for forming a capacitor using the same.

[0002] In various technological fields, metals with excellent electrical conductivity have been primarily used as electrode materials.

[0003] In the case of a capacitor, it comprises a lower electrode, an upper electrode, and a dielectric layer provided between the lower electrode and the upper electrode, and in the conventional case, metal was used as the lower electrode and the upper electrode.

[0004] However, if metal is used as the lower and upper electrodes, there is a problem with leakage current occurring.

[0005] The present invention is designed to solve the aforementioned conventional problems, and aims to provide a method for forming an electrode capable of preventing leakage current while having excellent electrical conductivity, and a method for forming a capacitor using the same.

[0006] To achieve the above objective, the present invention provides a method for forming an electrode comprising a first layer and a second layer on a substrate, comprising the steps of: forming the first layer on the substrate; and forming the second layer on the first layer, wherein the first layer comprises Ru and the second layer comprises an oxide of Ru (RuO).

[0007] The first layer may further comprise at least one metal selected from the group consisting of Ti, Pt, Co, and Cu, and the second layer may further comprise an oxide of at least one metal selected from the group consisting of Ti, Pt, Co, Cu, W, Ir, and In.

[0008] The step of forming the first layer and the step of forming the second layer can each be performed using one of the methods of ALD, PEALD, CVD, PECVD, LPCVD, MPCVD, HDPCVD, APCVD, MOCVD, and Cyclic-CVD.

[0009] The sheet resistance of the first layer above may be lower than the sheet resistance of the second layer above.

[0010] The work function of the second layer above may be higher than the work function of the first layer above.

[0011] The thickness of the second layer may be thicker than the thickness of the first layer.

[0012] After the step of forming the second layer, the method further includes the step of forming a third layer on the second layer, and the third layer may include at least one metal selected from the group consisting of Ru, Ti, Pt, Co, and Cu.

[0013] The method further includes a step of forming a plasma after the step of forming the first layer or the step of forming the second layer, and the gas forming the plasma may include one or more gases selected from O2, O3, N2, Ar, He, N2O, and NO.

[0014] The present invention also provides a method for forming a capacitor comprising a first electrode, a dielectric layer, and a second electrode on a substrate, comprising the steps of: forming the first electrode on the substrate; forming the dielectric layer on the first electrode; and forming the second electrode on the dielectric layer, wherein the step of forming the first electrode comprises the steps of: forming a first layer on the substrate; and forming a second layer on the first layer, wherein the first layer comprises Ru and the second layer comprises an oxide of Ru (RuO).

[0015] The first layer may further comprise at least one metal selected from the group consisting of Ti, Pt, Co, and Cu, and the second layer may further comprise an oxide of at least one metal selected from the group consisting of Ti, Pt, Co, Cu, W, Ir, and In.

[0016] The step of forming the first layer and the step of forming the second layer can each be performed using one of the methods of ALD, PEALD, CVD, PECVD, LPCVD, MPCVD, HDPCVD, APCVD, MOCVD, and Cyclic-CVD.

[0017] The sheet resistance of the first layer above may be lower than the sheet resistance of the second layer above.

[0018] The work function of the second layer above may be higher than the work function of the first layer above.

[0019] The thickness of the second layer may be thicker than the thickness of the first layer.

[0020] The dielectric layer may be composed of an oxide of a metal material selected from the group consisting of TiO, HfO, ZrO, CeO, LaO, SrO, STO, NbO, TaO, and AlO.

[0021] The crystal structure of the above dielectric layer may be identical to the crystal structure of the above second layer.

[0022] The second electrode may be composed of at least one metal material selected from the group consisting of Ru, Ti, Pt, Co, Cu, W, Ir, and In, or an oxide of a metal material.

[0023] The material constituting the second electrode above may be the same as the material constituting the second layer above.

[0024] The present invention also provides a method for forming a capacitor comprising a first electrode, a dielectric layer, and a second electrode on a substrate, comprising the steps of: forming the first electrode on the substrate; forming the dielectric layer on the first electrode; and forming the second electrode on the dielectric layer, wherein the step of forming the second electrode comprises the steps of: forming a first layer on the dielectric layer; and forming a second layer on the first layer, wherein the first layer comprises an oxide of Ru (RuO) and the second layer comprises Ru.

[0025] The first layer may further comprise an oxide of at least one metal selected from the group consisting of Ti, Pt, Co, Cu, W, Ir, and In, and the second layer may further comprise at least one metal selected from the group consisting of Ti, Pt, Co, and Cu.

[0026] The step of forming the first layer and the step of forming the second layer can each be performed using one of the methods of ALD, PEALD, CVD, PECVD, LPCVD, MPCVD, HDPCVD, APCVD, MOCVD, and Cyclic-CVD.

[0027] The sheet resistance of the second layer may be lower than the sheet resistance of the first layer.

[0028] The work function of the first layer above may be higher than the work function of the second layer above.

[0029] The thickness of the first layer above may be thicker than the thickness of the second layer above.

[0030] The dielectric layer may be composed of an oxide of a metal material selected from the group consisting of TiO, HfO, ZrO, CeO, LaO, SrO, STO, NbO, TaO, and AlO.

[0031] The crystal structure of the above dielectric layer may be identical to the crystal structure of the above first layer.

[0032] The first electrode may be composed of at least one metal material selected from the group consisting of Ru, Ti, Pt, Co, Cu, W, Ir, and In, or an oxide of a metal material.

[0033] The material constituting the first electrode above may be the same as the material constituting the first layer above.

[0034] According to the present invention as described above, the following effects are achieved.

[0035] An electrode according to one embodiment of the present invention comprises a first layer and a second layer, wherein the first layer comprises Ru and the second layer comprises an oxide of Ru, thereby

[0036] The sheet resistance of the first layer may be lower than that of the second layer, so that a high dielectric constant can be maintained in the high-frequency region, and the second layer may have a higher work function than the first layer, which can be advantageous for improving leakage current.

[0037] FIGS. 1a to 1c are schematic process cross-sectional views of an electrode forming method according to one embodiment of the present invention.

[0038] FIGS. 2a to 2c are schematic process cross-sectional views of an electrode forming method according to another embodiment of the present invention.

[0039] FIGS. 3a to 3c are schematic process cross-sectional views of an electrode forming method according to another embodiment of the present invention.

[0040] FIG. 4 is a schematic diagram of a substrate processing apparatus according to one embodiment of the present invention.

[0041] FIG. 5 is a schematic bottom view of a gas injection unit provided in a substrate processing device according to one embodiment of the present invention.

[0042] FIG. 6 is a schematic diagram of a substrate processing apparatus according to another embodiment of the present invention.

[0043] FIG. 7 is a diagram showing the arrangement structure of openings in a substrate processing apparatus according to another embodiment of the present invention.

[0044] FIG. 8 is a drawing showing the formation of a supply port and an opening in a substrate processing device according to another embodiment of the present invention.

[0045] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims.

[0046] Shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining embodiments of the present invention are exemplary, and therefore the present invention is not limited to the depicted details. Throughout the specification, the same reference numerals refer to the same components. Furthermore, in describing the present invention, if it is determined that a detailed description of related prior art could unnecessarily obscure the essence of the present invention, such detailed description is omitted. Where terms such as "includes," "has," or "is made up" are used in this specification, other parts may be added unless "only" is used. Where a component is expressed in the singular, it includes cases where it is included in the plural unless specifically stated otherwise.

[0047] In interpreting the components, they are interpreted to include a margin of error even in the absence of a separate explicit statement.

[0048] In the case of describing a positional relationship, for example, when the positional relationship between two parts is described using expressions such as 'on,' 'upper,' 'lower,' or 'next to,' one or more other parts may be located between the two parts unless 'immediately' or 'directly' is used.

[0049] In the case of an explanation of a temporal relationship, for example, when a temporal sequence is explained using 'after', 'following', 'next', 'before', etc., it may include cases where the sequence is not continuous unless 'immediately' or 'directly' is used.

[0050] Although terms such as "first," "second," etc., are used to describe various components, these components are not limited by these terms. These terms are used merely to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the technical scope of the present invention.

[0051] The features of each of the various embodiments of the present invention may be combined or combined with one another, either partially or wholly, and may technically enable various interlocking and operation. Each embodiment may be implemented independently of one another or may be implemented together in an associated relationship.

[0052] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

[0053] FIGS. 1a to 1c are schematic process cross-sectional views of a capacitor formation method according to one embodiment of the present invention.

[0054] First, as can be seen in FIG. 1a, a first electrode (2000) that functions as a lower electrode is formed on a substrate (100).

[0055] The process of forming the first electrode (2000) comprises a process of forming a first lower layer (2100) on the substrate (100) and a process of forming a first upper layer (2200) on the first lower layer (2100).

[0056] The substrate (100) may be made of a transparent material such as glass or plastic, or an opaque material such as metal or a silicon wafer. The substrate (100) may be made of an insulating material or a semiconductor material.

[0057] The first lower layer (2100) may be composed of at least one metal material selected from the group consisting of TiN, Ti, Ru, Pt, Co, and Cu, an oxide of the metal material, or a nitride of the metal material. For example, the first lower layer (2100) may include Ru. As another example, the first lower layer (2100) may additionally include at least one metal selected from the group consisting of Ti, Pt, Co, and Cu in addition to Ru, in which case it may include an alloy of Ru and the at least one metal.

[0058] The first lower layer (2100) can be formed using atomic layer deposition (ALD) or chemical vapor deposition (CVD). For example, the first lower layer (2100) can be formed using one of the methods of ALD, PEALD, CVD, PECVD, LPCVD, MPCVD, HDPCVD, APCVD, MOCVD, and Cyclic-CVD.

[0059] After forming the first lower layer (2100), a plasma can be formed. At this time, the gas forming the plasma may include one or more gases selected from O2, O3, N2, Ar, He, N2O, and NO.

[0060] The first upper layer (2200) may be composed of at least one metal material selected from the group consisting of TiN, Ti, Ru, Pt, Co, Cu, W, Ir, and In, an oxide of the metal material, or a nitride of the metal material. For example, the first upper layer (2200) may include an oxide of Ru (RuO). As another example, the first upper layer (2200) may additionally include an oxide of at least one metal selected from the group consisting of Ti, Pt, Co, Cu, W, Ir, and In in addition to the oxide of Ru, in which case it may include an oxide of an alloy of Ru and at least one metal.

[0061] The first upper layer (2200) can be formed using atomic layer deposition (ALD) or chemical vapor deposition (CVD). For example, the first upper layer (2200) can be formed using one of the methods of ALD, PEALD, CVD, PECVD, LPCVD, MPCVD, HDPCVD, APCVD, MOCVD, and Cyclic-CVD.

[0062] After forming the first upper layer (2200), a plasma can be formed. At this time, the gas forming the plasma may include one or more gases selected from O2, O3, N2, Ar, He, N2O, and NO.

[0063] The first lower layer (2100) and the first upper layer (2200) can be formed through a separate deposition process.

[0064] The first lower layer (2100) may have superior electrical conductivity compared to the first upper layer (2200). That is, the sheet resistance of the first lower layer (2100) may be lower than the sheet resistance of the first upper layer (2200), and accordingly, a high dielectric constant can be maintained in the high-frequency region.

[0065] The first upper layer (2200) may have a higher work function than the first lower layer (2100), and accordingly, may be advantageous for improving leakage current.

[0066] For such characteristics, the first lower layer (2100) may be composed of at least one metal material selected from the group consisting of TiN, Ti, Ru, Pt, Co, and Cu, and the first upper layer (2200) may be composed of an oxide of at least one metal material selected from the group consisting of TiN, Ti, Ru, Pt, Co, Cu, W, Ir, and In, but is not necessarily limited thereto.

[0067] In addition, the thickness of the first upper layer (2200) may be thicker than the thickness of the first lower layer (2100).

[0068] Although not illustrated, the process of forming the first electrode (2000) may additionally include a process of forming a first cover layer on the first upper layer (2200) after the process of forming the first upper layer (2200). The first cover layer may include at least one metal selected from the group consisting of Ru, Ti, Pt, Co, and Cu. The first cover layer may be formed from the same material through the same process as the first lower layer (2100).

[0069] Next, as can be seen in FIG. 1b, a dielectric layer (3000) is formed on the first electrode (2000).

[0070] The dielectric layer (3000) may be made of an oxide of a metal material.

[0071] The dielectric layer (3000) may be made of an oxide of a metal material selected from the group consisting of TiO, HfO, ZrO, CeO, LaO, SrO, STO, NbO, TaO, and AlO.

[0072] The dielectric layer (3000) can be formed using atomic layer deposition (ALD) or chemical vapor deposition (CVD). For example, the dielectric layer (3000) can be formed using one of the methods of ALD, PEALD, CVD, PECVD, LPCVD, MPCVD, HDPCVD, APCVD, MOCVD, and Cyclic-CVD.

[0073] The dielectric layer (3000) can be in contact with the first upper layer (2200) of the first electrode (2000).

[0074] The oxide of the metal material constituting the dielectric layer (3000) may have the same crystal structure as the material constituting the first upper layer (2200). For example, the oxide of the metal material constituting the dielectric layer (3000) and the material constituting the first upper layer (2200) may have a rutile structure.

[0075] Next, as can be seen in FIG. 1c, a second electrode (4000) that functions as an upper electrode is formed on the dielectric layer (3000).

[0076] The second electrode (4000) may be composed of at least one metal material selected from the group consisting of TiN, Ti, Ru, Pt, Co, Cu, W, Ir, and In, an oxide of a metal material, or a nitride of a metal material.

[0077] The second electrode (4000) can be formed using atomic layer deposition (ALD) or chemical vapor deposition (CVD). For example, the second electrode (4000) can be formed using one of the methods of ALD, PEALD, CVD, PECVD, LPCVD, MPCVD, HDPCVD, APCVD, MOCVD, and Cyclic-CVD.

[0078] The material constituting the second electrode (4000) may be the same as the material constituting the first upper layer (2200) of the first electrode (2000).

[0079] FIGS. 2a to 2c are schematic process cross-sectional views of a capacitor formation method according to another embodiment of the present invention.

[0080] First, as can be seen in FIG. 2a, a first electrode (2000) that functions as a lower electrode is formed on a substrate (100).

[0081] The substrate (100) may be made of a transparent material such as glass or plastic, or an opaque material such as metal or a silicon wafer. The substrate (100) may be made of an insulating material or a semiconductor material.

[0082] The first electrode (2000) may be composed of at least one metal material selected from the group consisting of TiN, Ti, Ru, Pt, Co, Cu, W, Ir, and In, an oxide of the metal material, or a nitride of the metal material.

[0083] The first electrode (2000) can be formed using atomic layer deposition (ALD) or chemical vapor deposition (CVD). For example, the first electrode (2000) can be formed using one of the methods of ALD, PEALD, CVD, PECVD, LPCVD, MPCVD, HDPCVD, APCVD, MOCVD, and Cyclic-CVD.

[0084] Next, as can be seen in FIG. 2b, a dielectric layer (3000) is formed on the first electrode (2000).

[0085] The dielectric layer (3000) may be made of an oxide of a metal material.

[0086] The dielectric layer (3000) may be made of an oxide of a metal material selected from the group consisting of TiO, HfO, ZrO, CeO, LaO, SrO, STO, NbO, TaO, and AlO.

[0087] The dielectric layer (3000) can be formed using atomic layer deposition (ALD) or chemical vapor deposition (CVD). For example, the dielectric layer (3000) can be formed using one of the methods of ALD, PEALD, CVD, PECVD, LPCVD, MPCVD, HDPCVD, APCVD, MOCVD, and Cyclic-CVD.

[0088] Next, as can be seen in FIG. 2c, a second electrode (4000) that functions as an upper electrode is formed on the dielectric layer (3000).

[0089] The process of forming the second electrode (4000) comprises a process of forming a second lower layer (4100) on the dielectric layer (3000) and a process of forming a second upper layer (4200) on the second lower layer (4100).

[0090] The second lower layer (4100) may be composed of at least one metal material selected from the group consisting of TiN, Ti, Ru, Pt, Co, Cu, W, Ir, and In, an oxide of the metal material, or a nitride of the metal material. For example, the second lower layer (4100) may include an oxide of Ru (RuO). As another example, the second lower layer (4100) may additionally include an oxide of at least one metal selected from the group consisting of Ti, Pt, Co, Cu, W, Ir, and In in addition to the oxide of Ru, in which case it may include an oxide of an alloy of Ru and at least one metal.

[0091] The second lower layer (4100) may be formed using atomic layer deposition (ALD) or chemical vapor deposition (CVD). For example, the second lower layer (4100) may be formed using one of the following methods: ALD, PEALD, CVD, PECVD, LPCVD, MPCVD, HDPCVD, APCVD, MOCVD, and Cyclic-CVD.

[0092] After forming the second lower layer (4100) above, a plasma can be formed. At this time, the gas forming the plasma may include one or more gases selected from O2, O3, N2, Ar, He, N2O, and NO.

[0093] The second upper layer (4200) may be composed of at least one metal material selected from the group consisting of TiN, Ti, Ru, Pt, Co, and Cu, an oxide of the metal material, or a nitride of the metal material. For example, the second upper layer (4200) may include Ru. As another example, the second upper layer (4200) may additionally include at least one metal selected from the group consisting of Ti, Pt, Co, and Cu in addition to Ru, in which case it may include an alloy of Ru and the at least one metal.

[0094] The second upper layer (4200) can be formed using atomic layer deposition (ALD) or chemical vapor deposition (CVD). For example, the second upper layer (4200) can be formed using one of the following methods: ALD, PEALD, CVD, PECVD, LPCVD, MPCVD, HDPCVD, APCVD, MOCVD, and Cyclic-CVD.

[0095] After forming the second upper layer (4200) above, a plasma can be formed. At this time, the gas forming the plasma may include one or more gases selected from O2, O3, N2, Ar, He, N2O, and NO.

[0096] The second lower layer (4100) and the second upper layer (4200) can be formed through a separate deposition process.

[0097] The second upper layer (4200) may have superior electrical conductivity compared to the second lower layer (4100). That is, the sheet resistance of the second upper layer (4200) may be lower than the sheet resistance of the second lower layer (4100), and accordingly, a high dielectric constant can be maintained in the high-frequency region.

[0098] The second lower layer (4100) may have a higher work function than the second upper layer (4200), and accordingly, may be advantageous for improving leakage current.

[0099] For such characteristics, the second upper layer (4200) may be composed of at least one metal material selected from the group consisting of TiN, Ti, Ru, Pt, Co, and Cu, and the second lower layer (4100) may be composed of an oxide of at least one metal material selected from the group consisting of TiN, Ti, Ru, Pt, Co, Cu, W, Ir, and In, but is not necessarily limited thereto.

[0100] Additionally, the thickness of the second lower layer (4100) may be thicker than the thickness of the second upper layer (4200).

[0101] The material constituting the second lower layer (4100) of the second electrode (4000) may be the same as the material constituting the first electrode (2000).

[0102] The second lower layer (4100) of the second electrode (4000) can be in contact with the dielectric layer (3000).

[0103] Although not illustrated, the process of forming the second electrode (4000) may additionally include a process of forming a second cover layer on the second upper layer (4200) after the process of forming the second upper layer (4200). The second cover layer may include an oxide of at least one metal selected from the group consisting of Ru, Ti, Pt, Co, Cu, W, Ir, and In. The second cover layer may be formed from the same material through the same process as the second lower layer (4100).

[0104] The oxide of the metal material constituting the dielectric layer (3000) may have the same crystal structure as the material constituting the second lower layer (4100). For example, the oxide of the metal material constituting the dielectric layer (3000) and the material constituting the second lower layer (4100) may have a rutile structure.

[0105] FIGS. 3a to 3c are schematic process cross-sectional views of a capacitor forming method according to another embodiment of the present invention.

[0106] First, as can be seen in FIG. 3a, a first electrode (2000) that functions as a lower electrode is formed on a substrate (100).

[0107] The process of forming the first electrode (2000) comprises a process of forming a first lower layer (2100) on the substrate (100) and a process of forming a first upper layer (2200) on the first lower layer (2100).

[0108] The substrate (100) may be made of a transparent material such as glass or plastic, or an opaque material such as metal or a silicon wafer. The substrate (100) may be made of an insulating material or a semiconductor material.

[0109] The first lower layer (2100) may be composed of at least one metal material selected from the group consisting of TiN, Ti, Ru, Pt, Co, and Cu, an oxide of the metal material, or a nitride of the metal material. For example, the first lower layer (2100) may include Ru. As another example, the first lower layer (2100) may additionally include at least one metal selected from the group consisting of Ti, Pt, Co, and Cu in addition to Ru, in which case it may include an alloy of Ru and the at least one metal.

[0110] The first lower layer (2100) can be formed using atomic layer deposition (ALD) or chemical vapor deposition (CVD). For example, the first lower layer (2100) can be formed using one of the methods of ALD, PEALD, CVD, PECVD, LPCVD, MPCVD, HDPCVD, APCVD, MOCVD, and Cyclic-CVD.

[0111] After forming the first lower layer (2100), a plasma can be formed. At this time, the gas forming the plasma may include one or more gases selected from O2, O3, N2, Ar, He, N2O, and NO.

[0112] The first upper layer (2200) may be composed of at least one metal material selected from the group consisting of TiN, Ti, Ru, Pt, Co, Cu, W, Ir, and In, an oxide of the metal material, or a nitride of the metal material. For example, the first upper layer (2200) may include an oxide of Ru (RuO). As another example, the first upper layer (2200) may additionally include an oxide of at least one metal selected from the group consisting of Ti, Pt, Co, Cu, W, Ir, and In in addition to the oxide of Ru, in which case it may include an oxide of an alloy of Ru and at least one metal.

[0113] The first upper layer (2200) can be formed using atomic layer deposition (ALD) or chemical vapor deposition (CVD). For example, the first upper layer (2200) can be formed using one of the methods of ALD, PEALD, CVD, PECVD, LPCVD, MPCVD, HDPCVD, APCVD, MOCVD, and Cyclic-CVD.

[0114] After forming the first upper layer (2200), a plasma can be formed. At this time, the gas forming the plasma may include one or more gases selected from O2, O3, N2, Ar, He, N2O, and NO.

[0115] The first lower layer (2100) and the first upper layer (2200) can be formed through a separate deposition process.

[0116] The first lower layer (2100) may have superior electrical conductivity compared to the first upper layer (2200). That is, the sheet resistance of the first lower layer (2100) may be lower than the sheet resistance of the first upper layer (2200), and accordingly, a high dielectric constant can be maintained in the high-frequency region.

[0117] The first upper layer (2200) may have a higher work function than the first lower layer (2100), and accordingly, may be advantageous for improving leakage current.

[0118] For such characteristics, the first lower layer (2100) may be composed of at least one metal material selected from the group consisting of TiN, Ti, Ru, Pt, Co, and Cu, and the first upper layer (2200) may be composed of an oxide of at least one metal material selected from the group consisting of TiN, Ti, Ru, Pt, Co, Cu, W, Ir, and In, but is not necessarily limited thereto.

[0119] In addition, the thickness of the first upper layer (2200) may be thicker than the thickness of the first lower layer (2100).

[0120] Although not illustrated, the process of forming the first electrode (2000) may additionally include a process of forming a first cover layer on the first upper layer (2200) after the process of forming the first upper layer (2200). The first cover layer may include at least one metal selected from the group consisting of Ru, Ti, Pt, Co, and Cu. The first cover layer may be formed from the same material through the same process as the first lower layer (2100).

[0121] Next, as can be seen in FIG. 3b, a dielectric layer (3000) is formed on the first electrode (2000).

[0122] The dielectric layer (3000) may be made of an oxide of a metal material.

[0123] The dielectric layer (3000) may be made of an oxide of a metal material selected from the group consisting of TiO, HfO, ZrO, CeO, LaO, SrO, STO, NbO, TaO, and AlO.

[0124] The dielectric layer (3000) can be formed using atomic layer deposition (ALD) or chemical vapor deposition (CVD). For example, the dielectric layer (3000) can be formed using one of the methods of ALD, PEALD, CVD, PECVD, LPCVD, MPCVD, HDPCVD, APCVD, MOCVD, and Cyclic-CVD.

[0125] The dielectric layer (3000) is in contact with the first upper layer (2200) of the first electrode (2000).

[0126] The oxide of the metal material constituting the dielectric layer (3000) may have the same crystal structure as the material constituting the first upper layer (2200). For example, the oxide of the metal material constituting the dielectric layer (3000) and the material constituting the first upper layer (2200) may have a rutile structure.

[0127] Next, as can be seen in FIG. 3c, a second electrode (4000) that functions as an upper electrode is formed on the dielectric layer (3000).

[0128] The process of forming the second electrode (4000) comprises a process of forming a second lower layer (4100) on the dielectric layer (3000) and a process of forming a second upper layer (4200) on the second lower layer (4100).

[0129] The second lower layer (4100) may be composed of at least one metal material selected from the group consisting of TiN, Ti, Ru, Pt, Co, Cu, W, Ir, and In, an oxide of the metal material, or a nitride of the metal material. For example, the second lower layer (4100) may include an oxide of Ru (RuO). As another example, the second lower layer (4100) may additionally include an oxide of at least one metal selected from the group consisting of Ti, Pt, Co, Cu, W, Ir, and In in addition to the oxide of Ru, in which case it may include an oxide of an alloy of Ru and at least one metal.

[0130] The second lower layer (4100) may be formed using atomic layer deposition (ALD) or chemical vapor deposition (CVD). For example, the second lower layer (4100) may be formed using one of the following methods: ALD, PEALD, CVD, PECVD, LPCVD, MPCVD, HDPCVD, APCVD, MOCVD, and Cyclic-CVD.

[0131] After forming the second lower layer (4100) above, a plasma can be formed. At this time, the gas forming the plasma may include one or more gases selected from O2, O3, N2, Ar, He, N2O, and NO.

[0132] The second upper layer (4200) may be composed of at least one metal material selected from the group consisting of TiN, Ti, Ru, Pt, Co, and Cu, an oxide of the metal material, or a nitride of the metal material. For example, the second upper layer (4200) may include Ru. As another example, the second upper layer (4200) may additionally include at least one metal selected from the group consisting of Ti, Pt, Co, and Cu in addition to Ru, in which case it may include an alloy of Ru and the at least one metal.

[0133] The second upper layer (4200) can be formed using atomic layer deposition (ALD) or chemical vapor deposition (CVD). For example, the second upper layer (4200) can be formed using one of the following methods: ALD, PEALD, CVD, PECVD, LPCVD, MPCVD, HDPCVD, APCVD, MOCVD, and Cyclic-CVD.

[0134] After forming the second upper layer (4200) above, a plasma can be formed. At this time, the gas forming the plasma may include one or more gases selected from O2, O3, N2, Ar, He, N2O, and NO.

[0135] The second lower layer (4100) and the second upper layer (4200) can be formed through a separate deposition process.

[0136] The second upper layer (4200) may have superior electrical conductivity compared to the second lower layer (4100). That is, the sheet resistance of the second upper layer (4200) may be lower than the sheet resistance of the second lower layer (4100), and accordingly, a high dielectric constant can be maintained in the high-frequency region.

[0137] The second lower layer (4100) may have a higher work function than the second upper layer (4200), and accordingly, may be advantageous for improving leakage current.

[0138] For such characteristics, the second upper layer (4200) may be composed of at least one metal material selected from the group consisting of TiN, Ti, Ru, Pt, Co, and Cu, and the second lower layer (4100) may be composed of an oxide of at least one metal material selected from the group consisting of TiN, Ti, Ru, Pt, Co, Cu, W, Ir, and In, but is not necessarily limited thereto.

[0139] Additionally, the thickness of the second lower layer (4100) may be thicker than the thickness of the second upper layer (4200).

[0140] The material constituting the second lower layer (4100) of the second electrode (4000) may be the same as the material constituting the first upper layer (2200) of the first electrode (2000).

[0141] Additionally, the material constituting the second upper layer (4200) of the second electrode (4000) may be the same as the material constituting the first lower layer (2100) of the first electrode (2000).

[0142] The second lower layer (4100) of the second electrode (4000) can be in contact with the dielectric layer (3000).

[0143] Although not illustrated, the process of forming the second electrode (4000) may additionally include a process of forming a second cover layer on the second upper layer (4200) after the process of forming the second upper layer (4200). The second cover layer may include an oxide of at least one metal selected from the group consisting of Ru, Ti, Pt, Co, Cu, W, Ir, and In. The second cover layer may be formed from the same material through the same process as the second lower layer (4100).

[0144] The oxide of the metal material constituting the dielectric layer (3000) may have the same crystal structure as the material constituting the second lower layer (4100). For example, the oxide of the metal material constituting the dielectric layer (3000) and the material constituting the second lower layer (4100) may have a rutile structure.

[0145] Additionally, as an example, the crystal structure of the material constituting the second lower layer (4100) and the crystal structure of the material constituting the first upper layer (2200) may also be the same as a rutile structure.

[0146] FIG. 4 is a schematic diagram of a substrate processing apparatus according to one embodiment of the present invention.

[0147] Referring to FIG. 4, a substrate processing device according to one embodiment may include a chamber (2). A processing process for a substrate (100) may be performed inside the chamber (2). The chamber (2) may include an upper dome (2a) and a lower dome (2b).

[0148] The upper dome (2a) may be positioned above the lower dome (2b). The upper dome (2a) may block the upper side of the processing space (PS). The processing space (PS) may be a space located inside the chamber (2). A processing process for the substrate (100) may be performed in the processing space (PS). The upper dome (2a) may be formed of quartz. The upper dome (2a) may be formed in the shape of a dome with the lower side open overall.

[0149] The lower dome (2b) may be positioned below the upper dome (2a). The lower dome (2b) may block the lower side of the processing space (PS). The lower dome (2b) may be formed of quartz. The lower dome (2b) may be formed with an open upper side. The lower dome (2b) may be provided with an exhaust section (221) for exhausting gas, impurities, etc. from the processing space (PS). The exhaust section (221) may include a turbo molecular pump (TMP) (222). The chamber (2) including the turbo molecular pump (222) may be controlled to a high vacuum pressure of 10 mTorr or more and 50 mTorr or less.

[0150] The chamber (2) may include a heating unit (23). The heating unit (23) may heat the substrate (100) located inside the chamber (2). The heating unit (23) may also heat the substrate (100) by heating the processing space (PS). The heating unit (23) may include a plurality of lamp heaters. The lamp heaters may heat the substrate (100) by emitting heating light toward the processing space (PS). The heating unit (23) may be positioned on the outside of the lower dome (2b). The heating unit (23) may also be positioned on the outside of the upper dome (2a).

[0151] The chamber (2) may include a chamber body (2c). The chamber body (2c) may be positioned between the upper dome (2a) and the lower dome (2b). The upper dome (2a) and the lower dome (2b) may each be coupled to the chamber body (2c).

[0152] A substrate support member (3) may be installed in the chamber (2). The substrate support member (3) may support one or more substrates (100). A processing process for the substrate (100) may be performed while the substrate (100) is supported by the substrate support member (3) and positioned in the processing space (PS). A driving unit (30a) may be coupled to the substrate support member (3). The driving unit (30a) may raise and lower the substrate support member (3). The driving unit (30a) may also rotate the substrate support member (3).

[0153] A gas injection unit (4) may be installed in the chamber (2). The gas injection unit (4) may inject gas. A processing process for the substrate (100) may be performed using the gas injected by the gas injection unit (4). The gas injection unit (4) may inject gas into the processing space (PS). The gas injection unit (4) may inject gas toward the substrate support (3).

[0154] The above gas injection unit (4) may include a first gas injection unit (41) and a second gas injection unit (42). The first gas injection unit (41) may inject a first gas. The second gas injection unit (42) may inject a second gas. The first gas and the second gas may be different types of gases.

[0155] The first gas injection unit (41) and the second gas injection unit (42) may inject gas toward different parts of the substrate support (3). The first gas injection unit (41) may include a first gas flow path for injecting the first gas. The second gas injection unit (42) may include a second gas flow path for injecting the second gas. In this case, a gas injection unit (4) having the first gas flow path and the second gas flow path may be provided on the upper part of the chamber (2). The first gas flow path and the second gas flow path may be spatially separated so that the first gas and the second gas are not mixed until they are injected into the processing space (PS).

[0156] The first gas and the second gas may be sequentially injected through a first gas channel and a second gas channel separated from each other to deposit a thin film by an Atomic Layer Deposition (ALD) process, or they may be simultaneously injected through a first gas channel and a second gas channel separated from each other to deposit a thin film by a Chemical Vapor Deposition (CVD) process. In this case, the first gas may include at least one gas among a source gas, a plasma gas, and a reaction gas, and the second gas may include at least one other gas among a source gas, a plasma gas, and a reaction gas. For example, the first gas may include at least one gas among a gas containing a metal element, a gas containing oxygen, a gas containing nitrogen, and a plasma gas, and the second gas may include at least one other gas among a gas containing a metal element, a gas containing oxygen, a gas containing nitrogen, and a plasma gas.

[0157] The first gas injection unit (41) may be connected to the first supply unit (51). The first supply unit (51) may store the first gas and supply the first gas to the first gas injection unit (41). The first gas injection unit (41) may be connected to the first pile-up tank (52). The first pile-up tank (52) may fill the first gas and temporarily inject the first gas into the processing space (PS) through the first gas injection unit (41). The first pile-up tank (52) may be connected to the first supply unit (51) and the first gas injection unit (41) respectively, between the first supply unit (51) and the first gas injection unit (41). The first supply unit (51) may supply a purge gas for purging the processing space (PS), a source gas, a reaction gas, or a plasma gas to the processing space (PS) to the first gas injection unit (41).

[0158] The second gas injection unit (42) may be connected to the second supply unit (53). The second supply unit (53) may store the second gas and supply the second gas to the second gas injection unit (42). The second gas injection unit (42) may be connected to the second pile-up tank (54). The second pile-up tank (54) may fill the second gas and temporarily inject the second gas into the processing space (PS) through the second gas injection unit (42). The second pile-up tank (54) may be connected to the second supply unit (53) and the second gas injection unit (42) respectively, between the second supply unit (53) and the second gas injection unit (42). The second supply unit (53) may supply a purge gas for purging the processing space (PS), a source gas, a reaction gas, or a plasma gas to the processing space (PS) to the second gas injection unit (42).

[0159] An antenna (40) may be installed in the chamber (2). The antenna (40) may be used to form plasma in the processing space (PS). The antenna (40) may include a coil that induces an electric field inside the chamber (2) for plasma formation. The antenna (40) may be positioned outside the upper dome (2a). The antenna (40) may be coupled to the upper surface of the upper dome (2a).

[0160] The antenna (40) can be connected to a power supply unit (400). The power supply unit (400) can apply RF (Radio Frequency) power to the antenna (40). Accordingly, the antenna (40) can form plasma inside the chamber (2). In this case, the gas injection unit (4) may inject plasma gas into the processing space (PS).

[0161] FIG. 5 is a schematic bottom view of a gas injection unit provided in a substrate processing device according to one embodiment of the present invention.

[0162] Referring to FIG. 5, the hole (44a) and the protruding member (43b) are formed over the entire lower surface of the gas injection part (4), and thus, gas can be injected over the entire central and outer regions of the substrate support part.

[0163] FIG. 6 is a schematic diagram of a substrate processing apparatus according to another embodiment of the present invention, FIG. 7 is a diagram showing the arrangement structure of an opening in a substrate processing apparatus according to another embodiment of the present invention, and FIG. 8 is a diagram showing the appearance of a supply port and an opening being formed in a substrate processing apparatus according to another embodiment of the present invention.

[0164] Referring to FIGS. 6 to 8, a substrate processing device according to another embodiment of the present invention comprises a chamber (10), a substrate support member (20) installed inside the chamber (10) to support a substrate (S) provided inside the chamber (10), a gas supply member (300) installed inside the chamber (10) to spray gas onto the substrate support member (20), and a power supply device (400) connected to the gas supply member (300) to supply power to the gas supply member (300) for generating plasma inside the chamber (10). The substrate processing device may further include a control device (not shown) for controlling the power supply device (400).

[0165] The chamber (10) provides a predetermined reaction space and maintains the reaction space in an airtight manner. The chamber (10) may include a body (14) having a predetermined reaction space, comprising a circular or square planar portion and a side wall portion extending upward from the planar portion, and a lid (12) positioned on the body (14) to maintain the reaction space in an airtight manner. However, the chamber (10) is not limited thereto and may be manufactured in various shapes corresponding to the shape of the substrate (S).

[0166] An exhaust port (not shown) is formed in a predetermined lower region of the chamber (10), and an exhaust pipe (not shown) connected to the exhaust port may be provided on the outside of the chamber (10). Additionally, the exhaust pipe may be connected to an exhaust device (not shown). A vacuum pump, such as a turbo molecular pump, may be used as the exhaust device. Accordingly, the inside of the chamber (10) can be vacuum-suctioned to a predetermined reduced pressure atmosphere, for example, to a predetermined pressure of 0.1 mTorr or less, by the exhaust device. The exhaust pipe may be installed not only on the bottom surface of the chamber (10) but also on the side surface of the chamber (10). Furthermore, to reduce the exhaust time, multiple exhaust pipes and corresponding exhaust devices may be additionally installed.

[0167] A substrate (S) provided into the chamber (10) for a substrate processing process can be placed on the substrate support member (20). The substrate support member (20) may be provided, for example, with an electrostatic chuck to support the substrate (S) by adsorbing it by electrostatic force, or it may support the substrate (S) by vacuum adsorption or mechanical force.

[0168] The substrate support member (20) may be provided in a shape corresponding to the shape of the substrate (S), for example, a circular or square shape. The substrate support member (20) may include a substrate support (22) on which the substrate (S) is placed, and an elevator (24) disposed below the substrate support (22) to move the substrate support (22) up and down. Here, the substrate support (22) may be manufactured to be larger than the substrate (S), and the elevator (24) is provided to support at least one area of ​​the substrate support (22), for example, the center, so that when the substrate (S) is placed on the substrate support (22), the substrate support (22) can be moved to be close to the gas injection device (300). A heater (not shown) may be installed inside the substrate support (22). The heater generates heat at a predetermined temperature to heat the substrate support (22) and the substrate (S) mounted on the substrate support (22), thereby allowing a thin film to be uniformly deposited on the substrate (S).

[0169] A gas supply unit may be installed in the lid (12) of the chamber (10). The gas supply unit may be installed to penetrate the lid (12) of the chamber (10) and may include a first gas supply unit (110) and a second gas supply unit (120) to provide a first gas and a second gas, respectively, to the gas supply unit (300). The first gas supply unit (110) and the second gas supply unit (120) may not be configured to provide only one gas each, but may be configured to provide multiple gases simultaneously.

[0170] The gas supply unit (300) is installed inside the chamber (10), for example, on the lower surface of the lid (12), and inside the gas supply unit (300), a first gas path for spraying a first gas onto a substrate and a second gas path for spraying a second gas onto a substrate are formed. The first gas path and the second gas path are provided to be independent and separated from each other so that the first gas and the second gas can be supplied to the substrate separately without mixing within the gas supply unit (300).

[0171] More specifically, the gas supply unit (300) comprises a first plate (310, 320) having a first gas injection hole (312) capable of supplying a first gas and a second gas injection hole (322) capable of supplying a second gas, and a second plate (330) having a plurality of openings (332) that are electrically insulated from the first plate (310, 320), spaced apart from the first plate (310, 320), and arranged staggered with respect to the first gas injection hole (312) and the second gas injection hole (322). Here, the first gas injection hole (312) is connected to a first gas flow path, and the second gas injection hole (322) is connected to a second gas flow path.

[0172] The first plate (310, 320) can operate as a first electrode for generating plasma in a reaction space, and thus, the first plate (310, 320) can be referred to as a first electrode.

[0173] The first plate (310, 320) may include an upper frame (310) and a lower frame (320).

[0174] The upper frame (310) is detachably attached to the lower surface of the lead (12), and at the same time, a portion of its upper surface, for example, the center of its upper surface, may be spaced apart from the lower surface of the lead (12) by a predetermined distance. Accordingly, the first gas provided from the first gas supply unit (110) can be diffused in the space between the upper surface of the upper frame (310) and the lower surface of the lead (12).

[0175] The lower frame (320) is installed at a certain distance from the lower surface of the upper frame (310). Accordingly, the second gas provided from the second gas supply unit (120) can be diffused in the space between the upper surface of the lower frame (320) and the lower surface of the upper frame (310).

[0176] The upper frame (310) and the lower frame (320) may be connected by a first sealing member (350) that seals their outer surfaces, thereby sealing their internal space. The first sealing member (350) may be formed of an insulating material to electrically insulate the upper frame (310) and the lower frame (320) from each other, or conversely, may be formed of a conductive material to electrically connect the upper frame (310) and the lower frame (320) to each other.

[0177] The first gas flow path may be formed so that the first gas provided from the first gas supply unit (110) diffuses in the space between the lower surface of the lid (12) and the upper frame (310), penetrates the upper frame (310) and the lower frame (320), and is supplied into the chamber (10). At this time, the first gas injection hole (312) may be formed in the first gas flow path, and specifically, it may be formed penetrating the upper frame (310) and the lower frame (320) while being isolated from the space between the upper surface of the lower frame (320) and the lower surface of the upper frame (310).

[0178] The second gas path may be formed so that the second gas provided from the second gas supply unit (120) diffuses in the space between the lower surface of the upper frame (310) and the upper surface of the lower frame (320), penetrates the lower frame (320), and is supplied into the chamber (10). At this time, the second gas injection hole (322) may be formed in the second gas path, and specifically, it may be formed penetrating the lower frame (320) while communicating with the space between the upper surface of the lower frame (320) and the lower surface of the upper frame (310).

[0179] Accordingly, the first gas path and the second gas path may not be connected to each other, and the first gas and the second gas may be supplied separately from the gas supply device through the first plate (310, 320) to the lower side of the first plate (310, 320).

[0180] The second plate (330) can operate as a second electrode for generating plasma in the reaction space, and thus, the second plate (330) can be referred to as a second electrode.

[0181] The second plate (330) is insulated from the first plate (310, 320) and can be installed spaced apart from the lower side of the first plate (310, 320). That is, the second plate (330) is insulated from the lower frame (320) and can be installed spaced apart from the lower side of the lower frame (320).

[0182] The second plate (330) is installed at a certain distance (D1) from the lower surface of the lower frame (320). Accordingly, the first gas and the second gas supplied downward through the first plate (310, 320) can diffuse in the space between the upper surface of the second plate (330) and the lower surface of the lower frame (320). The lower frame (320) and the second plate (330) may be structured such that their outer surfaces are sealed by a second sealing member (360). At this time, the second sealing member (360) may be formed of an insulating material to electrically insulate the lower frame (320) and the second plate (330) from each other.

[0183] At this time, the second plate (330) may be installed spaced apart from the lower side of the lower frame (320) by a distance such that the plasma sheath region formed on the lower surface of the lower frame (320) and the plasma sheath region formed on the upper surface of the second plate (330) can overlap. Here, the plasma sheath region refers to a dark field region where positive (+) ions are densely concentrated between the plasma and the surface of the structure, and although there is energy exchange, almost no plasma is formed.

[0184] If the plasma sheath area that can be formed on the lower surface of the lower frame (320) and the plasma sheath area that can be formed on the upper surface of the second plate (330) do not overlap, plasma may be formed between the plasma sheath areas. However, in another embodiment of the present invention, the lower frame (320) and the second plate (330) are spaced apart by a distance such that the plasma sheath area that can be formed on the lower surface of the lower frame (320) and the plasma sheath area that can be formed on the upper surface of the second plate (330) overlap, thereby preventing plasma from being generated between the lower surface of the lower frame (320) and the upper surface of the second plate (330).

[0185] Meanwhile, since the first gas and the second gas supplied downward through the first plate (310, 320) need to diffuse in the space between the lower surface of the lower frame (320) and the upper surface of the second plate (330), the lower surface of the lower frame (320) and the upper surface of the second plate (330) must be spaced apart at a distance that allows the gas to flow smoothly. Accordingly, the second plate (330) may be spaced apart from the lower frame (320) by a distance of 3 mm or less, for example, 1 to 3 mm. If the second plate (330) is spaced apart from the lower frame (320) by a distance of less than 1 mm, gas cannot flow smoothly in the space between the lower surface of the lower frame (320) and the upper surface of the second plate (330), and if it is spaced apart by a distance exceeding 3 mm, plasma is generated in the space between the lower surface of the lower frame (320) and the upper surface of the second plate (330), causing particles, which leads to process defects.

[0186] Additionally, the second plate (330) has a plurality of openings (332) arranged staggered with respect to the first gas injection hole (312) and the second gas injection hole (322). That is, as shown in FIG. 9, the second plate (330) has a plurality of openings (332) formed in a plan view that do not overlap with either the first gas injection hole (312) or the second gas injection hole (322). Such a plurality of openings (332) can be formed to be arranged between the first gas injection hole (312) and the second gas injection hole (322) respectively in a plan view. Additionally, the plurality of openings (332) can be formed to be arranged at a central position between the first gas injection hole (312) and the second gas injection hole (322).

[0187] If at least some of the plurality of openings (332) are arranged to overlap with the first gas injection hole (312) or the second gas injection hole (322), most of the gas supplied from the first gas injection hole (312) or the second gas injection hole (322) will pass through the opening (332) that overlaps with the first gas injection hole (312) or the second gas injection hole (322) and be injected, respectively. However, some gas may not be injected into the opening (332) and may flow into the space between the lower surface of the lower frame (320) and the upper surface of the second plate (330), and may stagnate in the space. Such stagnant gas may obstruct the smooth flow of gas and cause particle formation. Therefore, in the present invention, a plurality of openings (332) may be formed in the second plate (330) such that they are arranged alternately with the first gas injection hole (312) and the second gas injection hole (322), respectively.

[0188] As shown in FIG. 8, the above opening (332) may include a first opening (333) formed close to the lower frame (320) of the first plate and a second opening (335) connected to the first opening (333) and having a larger diameter than the first opening (333).

[0189] The above opening (332) may include a first opening (333) having a predetermined length (H1) and a predetermined diameter (D2) from the upper surface of the second plate (330), and a second opening (335) having a predetermined length (H2) and a predetermined diameter (D3) from the lower surface of the second plate (330). At this time, the first opening (333) serves as a gas inlet, and gas diffused in the space between the lower surface of the lower frame (320) and the upper surface of the second plate (330) is introduced through the first opening (333). On the other hand, the second opening (335) serves as a gas outlet, and gas introduced through the first opening (333) is injected to the lower side of the second plate (330) through the second opening (335).

[0190] The first opening (333) is arranged alternately with the first gas injection hole (312) and the second gas injection hole (322), and the second opening (335) may be formed extending downward from the first opening (333) while having a larger diameter than the first opening (333). Meanwhile, the second opening (335) may include a connecting portion (335a) formed such that the diameter increases at the connection portion with the first opening (333).

[0191] The first opening (333) guides the gas diffused between the lower surface of the lower frame (320) and the upper surface of the second plate (330) to the second opening (335) on the lower side. Thus, the first opening (333) has a selected diameter (D2) to uniformly guide the gas diffused between the lower surface of the lower frame (320) and the upper surface of the second plate (330) to each of the second openings (335). At this time, the first opening (333) may have a diameter (D2) such that its interior can form a plasma sheath region. To this end, the first opening (333) may have a diameter (D2) of 0.5 to 1.0 mm. If the diameter (D2) of the first opening (333) is formed to be less than 0.5 mm, gas cannot flow smoothly through the first opening (333), and it becomes difficult to remove particles that may exist within the first opening (333) during cleaning. On the other hand, if the diameter (D2) of the first opening (333) is formed to exceed 1.0 mm, plasma may be generated within the first opening (333), which may cause blockage by particles. Thus, the first opening (333) extends from the upper surface of the second plate (330) and may be formed to be shorter than the length of the second opening (335).

[0192] The second opening (335) is formed by connecting it to the lower side of the first opening (333). The second opening (335) generates plasma inside the second plate (330), that is, in a roughly cylindrical space. In other words, the second opening (335) provides a large surface area to promote the plasma ionization of the gas flowing into the second opening (335), thereby generating high-density plasma.

[0193] Meanwhile, the second opening (335) may include a connecting portion (335a) formed such that its diameter increases at the connection portion with the first opening (333). The connecting portion (335a) serves to smoothly transfer gas supplied through the first opening (333) to the second opening (335) from the upper side of the second opening (335). Such a connecting portion (335a) may have a shape in which the cross-section gradually increases from one end connected to the first opening (333) to the other end, thereby allowing the gas supplied through the first opening (333) to be guided through the connecting portion (335a) without stagnation and smoothly transferred to the second opening (335). However, the connecting portion (335a) is not an essential component, and if the connecting portion (335a) is omitted, a cylindrical second opening (335) may be directly connected to the lower side of the first opening (333).

[0194] The power supply unit (400) may be connected to the gas supply unit (300) to supply power to the gas supply unit (300) for generating plasma within the chamber (10). That is, the power supply unit (400) may supply RF power for generating plasma within the chamber (10).

[0195] The power supply device (400) is connected to the second plate (330) to supply RF power only to the second plate (330), and in this case, the first plate (310, 320) can be grounded. At this time, the first plate (310, 320) and the second plate (330) can be insulated by a second sealing member (360) formed of an insulating material. In this way, when the power supply device (400) supplies RF power to the second plate (330) and the first plate (310, 320) is grounded, the first plate (310, 320) and the second plate (330) each form electrodes for generating capacitively coupled plasma (CCP). Additionally, the substrate support (22) is also grounded so that capacitively coupled plasma can be generated between the second plate (330) and the support (22). Alternatively, the power supply unit (400) may be configured to supply RF power to the first plate (310, 320) and the second plate (330), respectively.

[0196] Although embodiments of the present invention have been described in more detail with reference to the attached drawings, the present invention is not necessarily limited to these embodiments and may be modified in various ways within the scope of the technical spirit of the present invention. Accordingly, the embodiments disclosed in the present invention are intended to explain, not limit, the technical spirit of the present invention, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. The scope of protection of the present invention shall be interpreted by the claims, and all technical spirits within an equivalent scope shall be interpreted as being included within the scope of rights of the present invention.

Claims

1. A method of forming an electrode comprising a first layer and a second layer on a substrate, A step of forming the first layer on the substrate; and The method comprises the step of forming the second layer on the first layer, and The above first layer includes Ru, A method for forming an electrode characterized in that the second layer comprises an oxide of Ru (RuO).

2. In Paragraph 1, The first layer further comprises at least one metal selected from the group consisting of Ti, Pt, Co, and Cu, and A method for forming an electrode, characterized in that the second layer further comprises an oxide of at least one metal selected from the group consisting of Ti, Pt, Co, Cu, W, Ir, and In.

3. In Paragraph 1, An electrode forming method characterized in that the step of forming the first layer and the step of forming the second layer are each performed using one of the methods of ALD, PEALD, CVD, PECVD, LPCVD, MPCVD, HDPCVD, APCVD, MOCVD, and Cyclic-CVD.

4. In Paragraph 1, A method for forming an electrode characterized in that the sheet resistance of the first layer is lower than the sheet resistance of the second layer.

5. In Paragraph 1, A method for forming an electrode characterized in that the work function of the second layer is higher than the work function of the first layer.

6. In Paragraph 1, A method for forming an electrode in which the thickness of the second layer is thicker than the thickness of the first layer.

7. In Paragraph 1, The method further includes the step of forming a third layer on the second layer after the step of forming the second layer, and A method for forming an electrode characterized in that the third layer comprises at least one metal selected from the group consisting of Ru, Ti, Pt, Co, and Cu.

8. In Paragraph 1, The method further includes a step of forming plasma after the step of forming the first layer or the step of forming the second layer, and A method for forming an electrode characterized in that the gas forming the plasma comprises one or more of O2, O3, N2, Ar, He, N2O, and NO.

9. A method for forming a capacitor comprising a first electrode, a dielectric layer, and a second electrode on a substrate, wherein A step of forming the first electrode on the substrate; A step of forming the dielectric layer on the first electrode; and The method comprises the step of forming the second electrode on the dielectric layer, and The process of forming the first electrode above is, A step of forming a first layer on the substrate; and It comprises the step of forming a second layer on the first layer, and The above first layer includes Ru, A method for forming a capacitor characterized in that the second layer comprises an oxide of Ru (RuO).

10. In Paragraph 9, The first layer further comprises at least one metal selected from the group consisting of Ti, Pt, Co, and Cu, and A method for forming a capacitor, characterized in that the second layer further comprises an oxide of at least one metal selected from the group consisting of Ti, Pt, Co, Cu, W, Ir, and In.

11. In Paragraph 9, A capacitor forming method characterized by each performing the step of forming the first layer and the step of forming the second layer using one of the methods of ALD, PEALD, CVD, PECVD, LPCVD, MPCVD, HDPCVD, APCVD, MOCVD, and Cyclic-CVD.

12. In Paragraph 9, A method for forming a capacitor characterized in that the sheet resistance of the first layer is lower than the sheet resistance of the second layer.

13. In Paragraph 9, A method for forming a capacitor characterized in that the work function of the second layer is higher than the work function of the first layer.

14. In Paragraph 9, A method for forming a capacitor in which the thickness of the second layer is thicker than the thickness of the first layer.

15. In Paragraph 9, A method for forming a capacitor characterized in that the dielectric layer is composed of an oxide of a metal material selected from the group consisting of TiO, HfO, ZrO, CeO, LaO, SrO, STO, NbO, TaO, and AlO.

16. In Paragraph 9, A method for forming a capacitor characterized in that the crystal structure of the dielectric layer is identical to the crystal structure of the second layer.

17. In Paragraph 9, A method for forming a capacitor, characterized in that the second electrode is composed of at least one metal material selected from the group consisting of Ru, Ti, Pt, Co, Cu, W, Ir, and In, or an oxide of a metal material.

18. In Paragraph 9, A method for forming a capacitor characterized in that the material constituting the second electrode is the same as the material constituting the second layer.

19. A method for forming a capacitor comprising a first electrode, a dielectric layer, and a second electrode on a substrate, wherein A step of forming the first electrode on the substrate; A step of forming the dielectric layer on the first electrode; and The method comprises the step of forming the second electrode on the dielectric layer, and The process of forming the second electrode above is, A step of forming a first layer on the dielectric layer; and It comprises the step of forming a second layer on the first layer, and The first layer above comprises an oxide of Ru (RuO), and A method for forming a capacitor characterized in that the second layer comprises Ru.

20. In Paragraph 19, The first layer further comprises an oxide of at least one metal selected from the group consisting of Ti, Pt, Co, Cu, W, Ir, and In, and A method for forming a capacitor, characterized in that the second layer further comprises at least one metal selected from the group consisting of Ti, Pt, Co, and Cu.

21. In Paragraph 19, A capacitor forming method characterized by each performing the step of forming the first layer and the step of forming the second layer using one of the methods of ALD, PEALD, CVD, PECVD, LPCVD, MPCVD, HDPCVD, APCVD, MOCVD, and Cyclic-CVD.

22. In Paragraph 19, A method for forming a capacitor characterized in that the sheet resistance of the second layer is lower than the sheet resistance of the first layer.

23. In Paragraph 19, A method for forming a capacitor characterized in that the work function of the first layer is higher than the work function of the second layer.

24. In Paragraph 19, A method for forming a capacitor in which the thickness of the first layer is thicker than the thickness of the second layer.

25. In Paragraph 19, A method for forming a capacitor characterized in that the dielectric layer is composed of an oxide of a metal material selected from the group consisting of TiO, HfO, ZrO, CeO, LaO, SrO, STO, NbO, TaO, and AlO.

26. In Paragraph 19, A method for forming a capacitor characterized in that the crystal structure of the dielectric layer is identical to the crystal structure of the first layer.

27. In Paragraph 19, A method for forming a capacitor, characterized in that the first electrode is composed of at least one metal material selected from the group consisting of Ru, Ti, Pt, Co, Cu, W, Ir, and In, or an oxide of a metal material.

28. In Paragraph 19, A method for forming a capacitor characterized in that the material constituting the first electrode is the same as the material constituting the first layer.

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