Method for forming boron nitride thin film and semiconductor device comprising thin film

WO2026142206A1PCT designated stage Publication Date: 2026-07-02SK TRICHEM +1
View PDF 0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
SK TRICHEM
Filing Date
2025-12-19
Publication Date
2026-07-02

Smart Images

  • Figure KR2025022415_02072026_PF_FP_ABST
    Figure KR2025022415_02072026_PF_FP_ABST
Patent Text Reader

Abstract

The present invention relates to a method for forming a boron nitride thin film, a boron nitride thin film produced therefrom, and a semiconductor device comprising the thin film and, more specifically, to a method for forming a boron nitride thin film for forming an insulating film, by using a nitrogen- and boron-containing precursor having a low dielectric constant (low-k) property, a boron nitride thin film produced therefrom, and a semiconductor device comprising the thin film.
Need to check novelty before this filing date? Find Prior Art