Solar cell and photovoltaic module

Abstract

The present application relates to the technical field of photovoltaics, and discloses a solar cell and a photovoltaic module, for use in solving the problem of optimization of a conductive doped region of the solar cell. The solar cell comprises a substrate; at least one surface of the substrate comprises first regions, second regions, and spacing regions; the first regions and the second regions are alternately arranged, and each first region is spaced apart from the adjacent second region by the corresponding spacing region; the first regions comprise first electrode arrangement regions and first connection portion arrangement regions which are connected; the first electrode arrangement regions are configured to correspondingly arrange first gate line electrodes; the first connection portion arrangement regions are configured to correspondingly arrange first connection portions electrically connected to the first gate line electrodes; in the alternating arrangement direction of the first regions and the second regions, at least one side of each first connection portion arrangement region protrudes, relative to the same side edge of the corresponding first electrode arrangement region, toward an adjacent spacing region to form a first protruding portion.

Description

Solar cells and photovoltaic modules Technical Field

[0001] This application relates to the field of photovoltaic technology, and more particularly to a solar cell and a photovoltaic module. Background Technology

[0002] A solar cell is a device that converts sunlight into electrical energy. Specifically, when a solar cell is in operation, sunlight shines on it, creating new electron-hole pairs. Under the influence of the built-in electric field of the pn junction, photogenerated holes flow to the p-region, and photogenerated electrons flow to the n-region. Once the circuit is connected through the electrode structure, an electric current is generated.

[0003] Solar cells have doped conductive regions on their surface. Metal electrodes are placed on these regions to collect the current generated within them. This current is then collected and discharged through interconnects. The shape of the doped conductive regions affects the energy conversion efficiency of the solar cell. The patterning of the doped conductive regions in existing solar cells needs further optimization to improve their energy conversion efficiency. Summary of the Invention

[0004] The purpose of this application is to provide a solar cell and a photovoltaic module that optimizes the patterning of the doped conductive region of the solar cell, thereby improving the energy conversion efficiency and the reliability of the solar cell.

[0005] In a first aspect, this application provides a solar cell, including a substrate, at least one side of which includes a first region, a second region and a spacer region, the first region and the second region being arranged alternately, and the first region being separated from the adjacent second region by the spacer region;

[0006] The first region includes a first electrode setting area and a first junction setting area connected together. The first electrode setting area is used to correspondingly set a first gate line electrode, and the first junction setting area is used to correspondingly set a first junction that is electrically connected to the first gate line electrode.

[0007] In the alternating arrangement direction of the first region and the second region, at least one side of the first joint setting region protrudes toward the adjacent spacing region relative to the same side edge of the first electrode setting region, forming a first protruding portion.

[0008] When the above technical solution is adopted, a first region and a second region are alternately arranged on at least one side of the solar cell. Both the first region and the second region are doped conductive regions of the cell. The first electrode setting area of ​​the first region is used to correspondingly set the first grid line electrode, and the first bonding part setting area of ​​the first region is used to correspondingly set the first bonding part. The first bonding part is electrically connected to the first grid line electrode, and the first grid line electrode is conductively connected to the interconnect through the first bonding part, so as to conduct out the current collected in the first region. Because the size of the first bonding portion is typically adjustable within a limited range to ensure reliable conductive connection with the interconnecting element, the width range of the first region on the solar cell corresponding to the first bonding portion is also limited. To optimize the pattern of the first and second regions on the cell, reduce carrier recombination, and achieve better energy conversion efficiency, this application does not adjust the width range of the first bonding portion setting area. Instead, it adjusts only the width of the first electrode setting area on the first region where the first bonding portion is not located, thus narrowing the width of the first electrode setting area. The resulting pattern of the first region is such that at least one side of the first bonding portion setting area protrudes towards the adjacent spacing area relative to the same edge of the first electrode setting area, forming a first protruding portion. This ensures the proper size setting of the first bonding portion setting area and, by narrowing the doped conductive areas in other locations, reduces the overall coverage area of ​​the doped conductive areas. This rationally optimizes the pattern of the first and second regions of the cell, reduces carrier recombination, and achieves the goal of improving the energy conversion efficiency of the cell while ensuring the reliability of the cell's electrical connection.

[0009] In some possible implementations, in the alternating arrangement direction of the first region and the second region, the opposite sides of the first joint setting area protrude towards the adjacent interval region relative to the corresponding side edges of the first electrode setting area, forming the first protruding portion. Thus, the pattern of the first region is such that both sides of the first joint setting area protrude outwards relative to the first electrode setting area. If the width of the first joint setting area is limited, both sides of the first electrode setting area can be narrowed inwards to optimize the pattern.

[0010] In some possible implementations, the second region includes a second electrode setting area and a second junction setting area connected together. The second electrode setting area is used to correspondingly set the second gate line electrode, and the second junction setting area is used to correspondingly set the second junction connected to the second gate line electrode.

[0011] In the alternating arrangement direction of the first region and the second region, the widths of the second electrode setting area and the second joint setting area in the same second region are equal; and / or, the distance between the first electrode setting area and the adjacent second electrode setting area is greater than the distance between the first protruding part of the first joint setting area and the adjacent second electrode setting area.

[0012] When adopting the above technical solution, the second electrode setting area of ​​the second region is used to correspondingly set the second grid line electrode, and the second joint setting area of ​​the second region is used to correspondingly set the second joint. The second joint is electrically connected to the second grid line electrode, and the second grid line electrode is electrically connected to the interconnect through the second joint. When the first region has a first protrusion, the second electrode setting area and the second joint setting area of ​​the same second region can be of equal width. That is, when the first electrode setting area of ​​the first region is narrowed, the distance between the first electrode setting area and the adjacent second electrode setting area is greater than the distance between the first protrusion of the first joint setting area and the adjacent second electrode setting area. By narrowing the first region and widening the second region, the pattern is optimized, thereby improving the energy conversion efficiency.

[0013] In some possible implementations, the second region includes a second electrode setting area and a second junction setting area connected together. The second electrode setting area is used to correspondingly set the second gate line electrode, and the second junction setting area is used to correspondingly set the second junction connected to the second gate line electrode.

[0014] In the alternating arrangement direction of the first region and the second region, a portion of at least one side of the second electrode setting region is recessed relative to the remaining portion of the at least one side of the second electrode setting region, away from the adjacent interval region, forming a first recessed portion.

[0015] When the above technical solution is adopted, if the first electrode setting area in the first region is narrowed, the second electrode setting area in the second region can also be recessed inward to form a first recessed part. By locally narrowing the second electrode setting area in the second region, the pattern of the second region can be optimized as needed.

[0016] In some possible implementations, the first recessed portion corresponds in position and matches in shape with the first protruding portion, and the first protruding portion and the first recessed portion are separated by the interval region;

[0017] And / or, in the alternating arrangement direction of the first region and the second region, the distance between the first electrode setting area and the adjacent second electrode setting area is greater than or equal to the distance between the first protruding part of the first joint setting area and the adjacent second electrode setting area.

[0018] When the above technical solution is adopted, if the first joint setting area in the first region has a first protruding part, in order to ensure that the distance between the first protruding part and the second electrode setting area in the adjacent second region meets the electrical isolation requirements, the first recessed part formed on the second region can be matched with the first protruding part, and there is a certain distance between the first recessed part and the first protruding part to achieve electrical isolation. The first electrode setting area and the second electrode setting area account for a large proportion of the first region and the second region, respectively. Therefore, ensuring that the distance between the first electrode setting area and the second electrode setting area is greater than or equal to the distance between the first protruding part of the first joint setting area and the adjacent second electrode setting area can reduce the overall leakage risk of the first region and the second region, and also ensure the distribution density of the first region and the second region.

[0019] In some possible implementations, the second region includes a second electrode setting area and a second junction setting area connected together, wherein the second electrode setting area is used to correspondingly set the second gate line electrode, and the second junction setting area is used to correspondingly set the second junction connected to the second gate line electrode;

[0020] In the alternating arrangement direction of the first region and the second region, at least one side of the second joint setting region protrudes toward the adjacent interval region relative to the same side edge of the second electrode setting region, forming a second protruding portion.

[0021] When the above technical solution is adopted, if the first joint area has a first protruding portion, similarly, since the second joint is usually limited in size adjustment range to ensure reliable conductive connection with the interconnect, the width range of the second region on the solar cell corresponding to the second joint is also limited. In order to optimize the pattern of the first and second regions on the cell to obtain better energy conversion efficiency, this application does not adjust the width range of the second joint area, but only adjusts the width of the second electrode area on the second region where the second joint is not set, so that the width of the second electrode area is narrowed. The resulting pattern of the second region is such that at least one side of the second joint area protrudes towards the adjacent interval area relative to the same side edge of the second electrode area, forming a second protruding portion. In this way, the size limitation of the second joint area can be eliminated, and the pattern of the first and second regions of the cell can be reasonably optimized to improve the energy conversion efficiency of the cell while ensuring the electrical connection reliability of the cell.

[0022] In some possible implementations, the first protruding portion and the adjacent second protruding portion are staggered in a direction perpendicular to the alternating arrangement direction of the first and second regions, and are separated by the interval region. Because the first and second protruding portions are staggered, correspondingly, the first joint area and the second joint area are also staggered. This facilitates the connection of the first joint portion in the first joint area with the interconnecting component, and facilitates the connection of the second joint portion in the second joint area with the external interconnecting component. This ensures that the connection areas of different interconnecting components are staggered, preventing short circuits caused by contact.

[0023] In some possible implementations, the projections of the first protrusion and the adjacent second protrusion on a straight line parallel to the alternating arrangement direction of the first and second regions overlap. This arrangement can further reduce the spacing between the first and second regions, thereby increasing the proportion of the first and second regions on the battery while meeting the spacing requirements, thus improving energy conversion efficiency and battery utilization.

[0024] In some possible implementations, in the alternating arrangement direction of the first and second regions, a portion of at least one side of the first electrode placement area is recessed relative to the remaining portion of the at least one side of the first electrode placement area, away from the adjacent spacing region, forming a second recessed portion. Similarly, when the second electrode placement area of ​​the second region is narrowed, the first electrode placement area of ​​the first region can also be recessed inward to form a second recessed portion, thereby optimizing the pattern of the first region as needed by locally narrowing the first electrode placement area of ​​the first region.

[0025] In some possible implementations, the second recessed portion corresponds in position and matches the shape of the second protruding portion, and the second protruding portion and the second recessed portion are separated by the interval region. Similarly, when the second joint setting area of ​​the second region has a second protruding portion, in order to ensure that the distance between the second protruding portion and the first electrode setting area of ​​the adjacent first region meets the electrical isolation requirements, the second recessed portion formed on the first region can be matched with the second protruding portion so that the distance there is equal to the distance between the second electrode setting area and the first electrode setting area.

[0026] In some possible implementations, in the alternating arrangement direction of the first and second regions, the protrusion width of the first protrusion relative to the same side of the first electrode setting region connected to the first junction setting region is 40μm to 80μm, and / or the protrusion width of the second protrusion relative to the same side of the second electrode setting region connected to the second junction setting region is 40μm to 80μm. If the protrusion width is less than this range when the width of the first junction setting region remains essentially unchanged, it indicates that the narrowing of the first electrode setting region is small, and the optimization effect is not significant. If the protrusion width is greater than this range, it indicates that the narrowing of the first electrode setting region is large, affecting the current collection in the first region and requiring higher precision in the subsequent setting of the first gate electrode. The reason for selecting the range of the second protrusion is the same as that for selecting the range of the first protrusion, and will not be repeated here.

[0027] In some possible implementations, the solar cell further includes the first grid line electrode and the first junction portion;

[0028] In the alternating arrangement direction of the first region and the second region, the ratio of the width of the first joint to the width of the first electrode setting area is 0.35 to 1.4. When the width ratio is less than 0.35, the width of the first joint is too small, which is not conducive to reliable connection with the interconnect. When the width ratio is greater than 1.4, the width of the first joint is too large, which is not conducive to electrical isolation and consumes more material. And / or, the ratio of the width of the first gate electrode to the width of the first electrode setting area is 0.015 to 0.3. When the width ratio is less than 0.015, the width of the first gate electrode is too small, which is not conducive to current collection and has a large resistance. When the width ratio is greater than 0.3, the width of the first gate electrode is too large, which is not conducive to electrical isolation and consumes more material.

[0029] In some possible implementations, the solar cell further includes a second grid electrode and a second junction.

[0030] In the alternating arrangement direction of the first region and the second region, the ratio of the width of the second joint to the width of the second electrode setting area is 0.2 to 0.7. When the width ratio is less than 0.2, the width of the second joint is too small, which is not conducive to reliable connection with the interconnect. When the width ratio is greater than 0.7, the width of the second joint is too large, which is not conducive to electrical isolation and consumes more material. And / or, the ratio of the width of the second gate electrode to the width of the second electrode setting area is 0.012 to 0.12. When the width ratio is less than 0.012, the width of the second gate electrode is too small, which is not conducive to current collection and has a large resistance. When the width ratio is greater than 0.12, the width of the second gate electrode is too large, which is not conducive to electrical isolation and consumes more material.

[0031] In some possible implementations, the substrate is a semiconductor substrate, and the solar cell further includes a first doped semiconductor layer and a first electrode unit. The semiconductor substrate includes a first surface and a second surface opposite to each other, and at least one surface includes the first surface. The first doped semiconductor layer is disposed on a first region of the first surface. The first doped semiconductor layer includes a plurality of first strip-shaped portions spaced apart along a first direction and extending along a second direction. The first direction and the second direction intersect. The alternating arrangement direction of the first region and the second region is the same as the first direction. Along the second direction, the first strip-shaped portions include a first partition and a second partition, the width of the first partition being greater than the width of the second partition. The first electrode unit is disposed on the side of the first doped semiconductor layer facing away from the semiconductor substrate. Wherein, the first partition includes a first edge and a second edge disposed opposite to each other and extending along the second direction. Along the second direction, within the same first partition, the two endpoints of the first edge are respectively offset from the two endpoints of the corresponding second edge; and / or, both the first edge and the second edge are provided with at least one first protruding unit spaced apart along the second direction and protruding along the first direction, the first protruding unit of the first edge and the first protruding unit of the second edge being offset along the second direction, and the first protruding portion includes the first protruding unit.

[0032] The first doped semiconductor layer includes a first strip-shaped portion for collecting charge carriers and discharging them through a first electrode unit disposed thereon. Within the first strip-shaped portion, there is a wider first partition and a narrower second partition. Charge carriers collected by the first electrode unit located on the second partition can flow to the first electrode unit located on the first partition and be discharging through the first electrode unit on the first partition to the in-string interconnect (the in-string interconnect is used to interconnect adjacent solar cells; the in-string interconnect can be a conductive structure such as a solder ribbon). The wider first partition increases the interconnect area between the in-string interconnect and the first partition, thus reducing the interconnect resistance. The narrower second partition reduces parasitic absorption in the first doped semiconductor layer.

[0033] Furthermore, when the two endpoints of the first edge within the same first partition are staggered from the two endpoints of the corresponding second edge along the second direction, the first edge within the same first partition shifts relative to the second edge along the second direction. This effectively widens the actual carrier collection range of the first partition along the second direction and improves carrier collection efficiency. Simultaneously, even if interconnecting elements are disposed on the first surface of the solar cell, and operational errors cause the actual placement position to shift relative to the designed position along the second direction, it can still be located on the first partition, increasing the contact probability between the interconnecting elements and the first partition. When both the first and second edges are provided with at least one first protruding unit spaced apart along the second direction and protruding along the first direction, the boundaries of different regions corresponding to the first protruding unit and the recessed portion adjacent to the first protruding unit in the same first partition shift along the first direction. This effectively widens the actual carrier collection range of the first partition along the first direction. Furthermore, when the first protruding units on the first edge and the second edge are staggered along the second direction, the recessed portions adjacent to the first protruding units in one of the first and second edges can be staggered, resulting in a larger width for different regions along the second direction within the same first partition. This facilitates a larger actual carrier collection range along the first direction for different regions along the second direction within the same first partition, improving the carrier collection efficiency of the first doped semiconductor layer and thus enhancing the performance of the solar cell. Especially in situations with limited design space, such as when controlling the coverage area of ​​the doped semiconductor layer on the first surface is necessary, or when a dense grid design requires a more compact arrangement of the doped semiconductor layer, the actual carrier collection range can be increased through the above two methods, thereby improving cell performance.

[0034] In some possible implementations, the first electrode unit includes a plurality of first bonding portions and a plurality of first gate line electrodes. The first bonding portions are disposed on a first partition. The first gate line electrodes are disposed on a second partition and are electrically connected to the first bonding portions. The first partition corresponds to a first bonding portion placement area, and the second partition corresponds to a first electrode placement area. Along a first direction, the width of the first bonding portion is greater than the width of the first gate line electrode.

[0035] The width of the first junction is greater than the width of the first grid electrode, which increases the contact area between the first junction and the interconnecting elements in the string, reduces the contact resistance between them, facilitates the collection and discharge of charge carriers, and reduces transmission losses. Secondly, the first partition in the first strip has a larger width (relative to the second partition). Therefore, even if the first junction has a larger width, it can prevent excessive metal recombination losses caused by the edge region of the first junction extending along the first direction crossing the boundary of the first partition, or the risk of leakage and short circuit caused by the contact between the first junction and the heterodyne-doped semiconductor layer for back contact cells. This improves the electrical reliability of the solar cell and also reduces the process difficulty of forming the first junction on the first partition, thereby improving the yield of the solar cell.

[0036] In some possible implementations, along the second direction, the ratio of the length of at least one first protruding unit to the length of the first partition is greater than or equal to one-fiftieth and less than or equal to one-half.

[0037] The ratio of the length of at least one first protruding unit to the length of the first partition is within the aforementioned range. This prevents the first protruding unit from being too small, which would limit the growth of the actual carrier collection range of the first partition due to the presence of the first protruding unit, thus ensuring higher carrier collection efficiency in the first partition. Furthermore, it prevents the proportion of the wider portion of the first partition due to the presence of the first protruding unit from being too large, which helps reduce parasitic absorption of the first doped semiconductor layer at the first partition. Secondly, for back-contact cells, this also prevents the leakage risk between the second doped semiconductor layer and the first partition from being too high due to the excessive length of the wider portion of the first partition, thus improving the performance of the solar cell.

[0038] In some possible implementations, along the second direction, the ratio of the spacing between two adjacent first protruding units to the length of the first partition is greater than or equal to one-fiftieth and less than or equal to three-quarters.

[0039] The ratio of the spacing between two adjacent first protruding units to the length of the first partition is within the aforementioned range. This prevents the proportion of the length of the first protruding units in the first edge and / or the second edge from being too large due to an excessively small ratio, i.e., preventing the portion with a larger width in the first partition from being too large due to the presence of the first protruding units. Furthermore, this ratio also prevents the proportion of the length of the first protruding units in the first edge and / or the second edge from being too small due to an excessively large ratio, i.e., preventing the effective increase in the actual carrier collection range corresponding to the first protruding units in the first partition from being ineffective. The application principle of this beneficial effect can be referred to the preceding text and will not be repeated here.

[0040] In some possible implementations, the ratio of the width of the first partition along the first direction to the distance by which at least one first protruding unit protrudes along the first direction is greater than or equal to 2 and less than or equal to 1000.

[0041] The ratio of the width of the first partition along the first direction to the distance by which at least one first protruding unit protrudes along the first direction is within the aforementioned range. This prevents the width growth of the corresponding region within the first partition from being limited due to the presence of the first protruding unit in the first edge and / or second edge, thus ensuring a higher carrier collection efficiency for the first partition. Furthermore, it prevents the width of the region corresponding to the first protruding unit within the first partition from being excessively large due to an excessively large ratio, which helps reduce parasitic absorption of the first doped semiconductor layer at the first partition. Secondly, for back-contact cells, it also prevents a high risk of leakage between the second doped semiconductor layer and the region corresponding to the first protruding unit in the first partition, thereby improving the performance of the solar cell.

[0042] In some possible implementations, along the first direction, the ratio of the width of the first partition to the width of the second partition is greater than or equal to 1.2 and less than or equal to 3.

[0043] The ratio of the width of the first partition and the second partition being within the aforementioned range can prevent the width of the first partition from being too small due to an excessively small ratio, ensuring a large interconnection area between the first partition and the interconnect components within the string, and / or reducing the manufacturing difficulty of the wider first junction portion on the first partition. Furthermore, it can also prevent the width of the first partition from being too large and / or the width of the second partition from being too small due to an excessively large ratio, reducing the risk of parasitic absorption and leakage of the first doped semiconductor layer at the first partition, while simultaneously lowering the required process precision when manufacturing the first gate electrode on the second partition, thus reducing manufacturing difficulty.

[0044] In some possible implementations, along the second direction, the ratio of the length of the first partition to the distance offset from at least one endpoint of the first edge and the corresponding endpoint of the second edge is greater than 0 and less than or equal to 14.5.

[0045] The ratio of the length of the first partition to the distance by which it is offset from at least one endpoint of the first edge and the corresponding endpoint of the second edge is within the aforementioned range. This prevents the actual carrier collection range of the first partition along the first direction from being limited due to a small ratio, thus ensuring that the first partition has a high carrier collection efficiency along the first direction. Furthermore, it prevents the length of the narrower edge portions at both ends of the first partition along the first direction from being excessively long due to the offset of the first and second edges along the second direction. This ensures that the edge portions at both ends of the first partition along the first direction also have a certain carrier collection range in the second direction, and also helps reduce the manufacturing difficulty of the first joint on the edge portions at both ends of the first partition along the first direction.

[0046] In some possible implementations, the length of at least one first protruding unit located on the outer side of the first edge and / or the second edge along the first direction is less than the length of the remaining first protruding units along the second direction. This configuration differentiates the lengths of the first protruding units located on the outer side of the first edge and / or the second edge along the first direction. Because there is a certain distance between the edge portion of the first joint along the second direction and the edge of the first partition extending along the first direction, when the length of at least one first protruding unit located on the outer side of the first edge and / or the second edge along the first direction is smaller, and the lengths of the remaining first protruding units along the second direction are larger, the width of the first partition can be increased by using the larger first protruding unit located in the middle. This reduces the manufacturing difficulty of the first joint while also reducing the risk of parasitic absorption and leakage at the edge portion of the first partition along the second direction where the first joint is not located, resulting in higher performance for the solar cell.

[0047] In some possible implementations, the number of first protruding units on the first edge is greater than the number of first protruding units on the second edge; and / or, along the second direction, the length of at least one first protruding unit on the first edge is different from the length of the first protruding unit on the second edge; and / or, the distance by which at least one first protruding unit on the first edge protrudes along the first direction is different from the distance by which the first protruding unit on the second edge protrudes along the first direction. This configuration allows for differentiated configuration of the first protruding units on the first edge and the second edge, enabling diversified configuration of the carrier collection range on the side corresponding to the first edge and the side corresponding to the second edge of the first partition.

[0048] In some possible implementations, the solar cell further includes a second doped semiconductor layer. The second doped semiconductor layer is disposed on a second region of the first surface, and the conductivity type of the second doped semiconductor layer is opposite to that of the first doped semiconductor layer. The second doped semiconductor layer includes a plurality of second stripes extending along a second direction and spaced apart along a first direction, with the first and second stripes alternately spaced along the first direction.

[0049] In some possible implementations, at least one second strip includes a third section and a fourth section. The width of the third section is smaller than the width of the fourth section. The third section included in at least one second strip is correspondingly configured with the first section included in the adjacent first strip.

[0050] At least one of the narrower third sections in the second stripe is correspondingly positioned to the wider first section in the adjacent first stripe. This facilitates the effective utilization of the surface area in the first surface and promotes timely splitting and collection of charge carriers. Furthermore, the correspondence between the narrower third section and the wider first section ensures a certain distance between them, reducing the risk of leakage and making the corresponding patterns of the first and second stripes relatively regular, thus reducing the difficulty of patterning.

[0051] In some possible implementations, the end of the first partition adjacent to the second partition has a first inflection point protruding outward along a first direction, and the end of the fourth partition adjacent to the third partition has a second inflection point protruding outward along the first direction. The line connecting at least one first inflection point and an adjacent second inflection point is parallel to the second direction; or, the extension line of at least one first inflection point in the second direction is located on the side of the extension line of the adjacent second inflection point in the second direction closer to the second partition. This arrangement helps to increase the distance between the end of the first partition adjacent to the second partition and the adjacent third partition, which has the opposite conductivity type, along the first direction, thus reducing the risk of leakage between them.

[0052] In some possible implementations, the region in the first surface located between the first doped semiconductor layer and the second doped semiconductor layer is a gap region. Wherein, along the second direction, the length of the third partition is greater than the length of the adjacent first partition, and the portion of the gap region located between the end of the third partition along the second direction and the end of the adjacent first partition along the second direction is a corner region, and wherein: the width of the corner region along the first direction is greater than the width of the remaining portion of the gap region excluding the corner region along the first direction; and / or, the width of the gap region between the first partition and the adjacent third partition is s, and the width of the gap region between the second partition and the adjacent fourth partition is r, 0.5r ≤ s ≤ 2r.

[0053] There are corners at the ends of the first and second sections, and at the ends of the fourth and third sections, where the electric field is relatively concentrated, leading to a higher risk of leakage. By making the width of the corner region along the first direction greater than the width of the rest of the interval region along the first direction, the distance between the ends of the first and second sections and the ends of the fourth and third sections can be increased, reducing the carrier recombination rate at the corners. Furthermore, when the relationship between r and s satisfies the above, the width of the interval region at different locations can be set according to actual needs, which is beneficial for reducing the risk of leakage.

[0054] In some possible implementations, the two side boundaries of the second partition extending along the second direction are each provided with a plurality of second protruding units that are spaced apart along the second direction and protrude along the first direction. Specifically, the distance by which at least one first protruding unit protrudes along the first direction is greater than or equal to the distance by which at least one second protruding unit protrudes along the first direction; and / or, along the second direction, the spacing between two adjacent first protruding units is less than the spacing between two adjacent second protruding units.

[0055] The distance that charge carriers travel from the first partition to the interconnect within the string is less than the distance that charge carriers travel from the second partition to the interconnect within the string. Therefore, when at least one first protruding unit protrudes a large distance along the first direction, it is beneficial to increase the actual charge carrier collection range of the first partition along the first direction, while enabling more charge carriers to be exported over a shorter distance, thus reducing the transmission resistance.

[0056] In some possible implementations, the side boundaries of the third and / or fourth partitions extending along the second direction are provided with third protruding units that are spaced apart along the second direction and protrude along the first direction. Specifically, the distance by which at least one first protruding unit protrudes along the first direction is greater than the distance by which at least one third protruding unit protrudes along the first direction; and / or, along the second direction, the length of at least one first protruding unit is greater than the length of at least one third protruding unit; and / or, along the second direction, the spacing between two adjacent first protruding units is greater than the spacing between two adjacent third protruding units; and / or, the undulation morphology of the side boundaries of the third partition extending along the second direction is different from the undulation morphology of the side boundaries of the first partition extending along the second direction; and / or, the undulation morphology of the side boundaries of the fourth partition extending along the second direction is different from the undulation morphology of the side boundaries of the second partition extending along the second direction.

[0057] When the distance of at least one first protruding unit protruding along the first direction and / or the length of at least one first protruding unit along the second direction are large, it is beneficial to increase the actual carrier collection range of the first partition along the first direction and improve the carrier collection capability of the first partition. Conversely, when the spacing between two adjacent first protruding units is large, it can prevent the proportion of the wider portion in the first partition from becoming too large, which is beneficial to reducing the leakage risk between the first partition and the adjacent third partition. Furthermore, when the distance of at least one third protruding unit protruding along the first direction and / or the length of at least one third protruding unit along the second direction are small, it is beneficial to ensure that the gap between the first and third partitions has a certain width, and that the wider gap has a certain length proportion, which is beneficial to reducing the leakage risk between the first partition and the adjacent third partition. In addition, when the undulating morphology of the two side boundaries of the third partition extending along the second direction is different from that of the two side boundaries of the first partition extending along the second direction, the polarity and position of the first and second strip-shaped portions can be accurately determined by the difference in their edge morphologies, reducing the difficulty of subsequent operations such as printing electrodes. As for the beneficial effects of the third protruding unit of the fourth partition having the above-mentioned features, please refer to the previous text, which will not be repeated here.

[0058] In some possible implementations, along the first direction, the ratio of the width of the first partition to the width of the third partition is greater than or equal to 1.2 and less than or equal to 3; and / or, along the first direction, the ratio of the width of the first partition to the width of the fourth partition is greater than or equal to 0.6 and less than or equal to 1.8.

[0059] The ratio of the widths of the first and third partitions being within the aforementioned range can prevent the first partition from being too narrow and / or the third partition from being too wide due to an excessively small ratio. This ensures that the first partition has a large actual carrier collection range along the first direction, reduces the manufacturing difficulty of the first junction on the first partition, reduces parasitic absorption in the third partition, and reduces the risk of leakage between the first and third partitions due to a smaller distance caused by a larger width in the third partition. Furthermore, it can also prevent the first partition from being too wide and / or the third partition from being too narrow due to an excessively large ratio. The application principle of preventing the first partition from being too wide can refer to the application principle of preventing the third partition from being too wide, and the application principle of preventing the third partition from being too narrow can refer to the application principle of preventing the first partition from being too narrow, which will not be repeated here. The application principle of the beneficial effect of the ratio of the widths of the first and fourth partitions being within the aforementioned range can refer to the application principle of the beneficial effect of the ratio of the widths of the first and third partitions being within the aforementioned range, which will not be repeated here.

[0060] In some possible implementations, the angle β between at least one end boundary of the first protruding unit along the second direction and the second direction is greater than or equal to 60° and less than or equal to 150°. This setting can prevent one end of the first protruding unit along the second direction from having an excessively large protrusion distance while the other end has an excessively small protrusion distance due to an excessively large or small angle β, thus making the carrier collection capacity of different parts of the first protruding unit along the length direction more balanced and reducing the carrier recombination rate; at the same time, it prevents the distance of the first protruding unit protruding too far from one end along the second direction from being too small, thus reducing the risk of leakage.

[0061] Secondly, this application also provides a photovoltaic module, comprising:

[0062] A battery string, which is formed by electrically connecting several or more solar cells in any of the embodiments;

[0063] Interconnectors and the junction of the solar cells are electrically connected; and

[0064] Encapsulation layer, used to cover the surface of the battery string.

[0065] The beneficial effects of photovoltaic modules in the second aspect can be found in the analysis of the beneficial effects in the first aspect and its various implementation methods, and will not be elaborated here. Attached Figure Description

[0066] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0067] Figure 1 is a schematic diagram of the structure of the first and second regions of a solar cell provided in an embodiment of this application;

[0068] Figure 2 is a schematic diagram of the structure of the first and second regions of another solar cell provided in an embodiment of this application;

[0069] Figure 3A is a schematic diagram of the structure of the first and second regions of another solar cell provided in an embodiment of this application;

[0070] Figure 3B is a schematic diagram of the structure of the first and second regions of another solar cell provided in an embodiment of this application;

[0071] Figure 4 is a schematic diagram of the structure of the first and second regions of another type of solar cell provided in the embodiments of this application;

[0072] Figure 5 is a schematic diagram of the structure of a solar cell including electrodes according to an embodiment of this application;

[0073] Figure 6 is a schematic diagram of the structure of another solar cell including electrodes provided in an embodiment of this application.

[0074] Figure 7 is a partial schematic diagram of the first doped semiconductor layer and the second doped semiconductor layer in the solar cell provided in the embodiment of this application;

[0075] Figure 8 is a partial schematic diagram of the first doped semiconductor layer and the second doped semiconductor layer in the solar cell provided in the embodiment of this application;

[0076] Figure 9 is a partial schematic diagram of the first doped semiconductor layer and the second doped semiconductor layer in the solar cell provided in the embodiment of this application;

[0077] Figure 10 is a partial schematic diagram of the first doped semiconductor layer and the second doped semiconductor layer in the solar cell provided in the embodiment of this application.

[0078] Reference numerals: 1 for first region, 11 for first joint area, 111 for first protrusion, 12 for first electrode area, 121 for second recessed area, 2 for second region, 21 for second joint area, 211 for second protrusion, 22 for second electrode area, 221 for first recessed area, 3 for interval area, 4 for second joint, 5 for second gate electrode, 6 for first joint, 7 for first gate electrode, 8 for semiconductor substrate, 9 for first doped semiconductor layer, 13 for first strip, 14 for first partition, 15 for second partition, 16 for first electrode, 17 for first edge, 18 for second edge, 19 for first protrusion unit, 10 for second doped semiconductor layer, 23 for second strip, 24 for third partition, 25 for fourth partition, 26 for first inflection point, 27 for second inflection point, 29 for second protrusion unit, 30 for third protrusion unit. Detailed Implementation

[0079] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.

[0080] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0081] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise expressly specified. "Several" means one or more, unless otherwise expressly specified.

[0082] In the description of this application, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0083] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0084] Solar cells have doped conductive regions on their surface. Metal electrodes are placed on these doped conductive regions to collect the current generated within them. The metal electrodes are electrically connected through bonding elements and interconnects. Finally, the current is collected and discharged through the interconnects, which can be external solder strips or conductive layers. The shape of the doped conductive regions affects the energy conversion efficiency of the solar cell. The patterning of the doped conductive regions in existing solar cells needs further optimization to improve their energy conversion efficiency.

[0085] Implementation Plan A

[0086] In a first aspect, as shown in Figures 1 and 5, embodiments of this application provide a solar cell, including a substrate. At least one side of the substrate includes a first region 1, a second region 2, and a spacer region 3. The first region 1 and the second region 2 are arranged alternately, and the first region 1 is separated from the adjacent second region 2 by the spacer region 3. Both the first region 1 and the second region 2 are doped conductive regions of the solar cell. The first region 1 and the second region 2 may be provided with a doped semiconductor layer located on the surface of the substrate and / or a doped semiconductor layer located within the surface of the substrate. The first region 1 includes a first electrode setting region 12 and a first bonding region setting region 11 connected together. There may be multiple first electrode setting regions 12 and first bonding region setting regions 11, which are arranged alternately in the connecting direction. The first electrode setting region 12 is used to correspondingly set a first grid electrode 7, and the first bonding region setting region 11 is used to correspondingly set a first bonding region 6 electrically connected to the first grid electrode 7. It is understood that "the first junction area 11 is used to correspondingly provide the first junction 6 electrically connected to the first gate electrode 7" does not mean that the first junction area 11 only provides the first junction 6, but rather that the size (length and / or width) of the first junction 6 can be less than or equal to the size (length and / or width) of the first junction area 11, and therefore in some cases a portion of the first gate electrode 7 enters the first junction area 11; correspondingly, the first gate electrode 7 is at least partially located in the first electrode area 12. When a doped semiconductor layer is provided on the substrate surface in the first region 1, "the first region 1 includes the connected first electrode area 12 and the first junction area 11" can be understood as the doped semiconductor layer provided in the first region 1 including the connected first electrode area 12 and the first junction area 11. The second region 2 includes a connected second electrode setting area 22 and a second junction setting area 21. There can be multiple second electrode setting areas 22 and second junction setting areas 21, arranged alternately in the connecting direction. The second electrode setting area 22 is used to correspondingly set the second gate electrode 5, and the second junction setting area 21 is used to correspondingly set the second junction 4 connected to the second gate electrode 5. Similarly, "the second junction setting area 21 is used to correspondingly set the second junction 4 connected to the second gate electrode 5" does not mean that the second junction setting area 21 only sets the first junction 4. Rather, the size (length and / or width) of the first junction 4 can be smaller than or equal to the size (length and / or width) of the second junction setting area 21, and therefore in some cases, a portion of the second gate electrode 5 enters the second junction setting area 21; correspondingly, the second gate electrode 5 is at least partially located in the second electrode setting area 22.Similarly, when a doped semiconductor layer is provided on the substrate surface in the second region 2, "the second region 2 includes the connected second electrode setting area 22 and the second bonding area 21" can be understood as the doped semiconductor layer provided in the first region 2 including the connected second electrode setting area 22 and the second bonding area 21. The first bonding area 6 and the second bonding area 4 can be a bonding area, a thickened section of the grid line electrode, a section of the grid line electrode, or an electrical connection point, etc., that can be electrically connected to the interconnect. The interconnect can be an external solder strip or a conductive layer, as long as it enables the battery cells to form a battery string through conductive connection. For example, the conductive layer can be a conductive layer used for a conductive backsheet. Furthermore, although the above text uses terms such as "first joint 6 electrically connected to the first gate electrode 7" and "second joint 4 connected to the second gate electrode 5," it should be understood that the first joint 6 and the second joint 4 themselves can have structures different from the first gate electrode 7 and the second gate electrode 5, such as bonding pads or other joints. The first joint 6 itself can also be a part of the first gate electrode 7, and the second joint 4 itself can also be a part of the second gate electrode 5. For example, a part of the first gate electrode 7 and a part of the second gate electrode 5 can directly form a conductive connection with the interconnect, and this part is the first joint 6 and the second joint 4, respectively. The alternating arrangement direction of the first region 1 and the second region 2 is the first direction in FIG1. ​​At least one side of the first joint setting region 11 protrudes towards the adjacent spacing region 3 relative to the same side edge of the first electrode setting region 12, forming a first protruding portion 111.

[0087] In the above-described technical solution, a first region 1 and a second region 2 are alternately arranged on at least one side of the solar cell. A first electrode setting area 12 of the first region 1 is used to correspondingly set a first grid electrode 7, and a first junction area 11 of the first region 1 is used to correspondingly set a first junction 6. The first junction 6 is electrically connected to the first grid electrode 7, and the first grid electrode 7 is conductively connected to the interconnect via the first junction 6, thus discharging the current collected in the first region 1. Because the size of the first junction 6 is typically limited to ensure reliable conductive connection with the interconnect, the overall width range of the first region 1 on the solar cell where the first junction 6 is located is limited. This restricts the existing doped conductive region pattern setting schemes for solar cells. To optimize the doped conductive region pattern on the cell and obtain better energy conversion efficiency, this application does not adjust the width range of the first junction setting area 11 used to set the first junction 6, but only adjusts the width of the first electrode setting area 12 on the first region 1 where the first junction 6 is not located. Adjustments are made to narrow the width of the first electrode setting area 12, resulting in a pattern in the first region 1 where at least one side of the first bonding area 11 protrudes towards the adjacent interval area 3 relative to the same edge of the first electrode setting area 12, forming a first protruding portion 111. This ensures the size setting of the first bonding area 11, and by narrowing the doped conductive areas in other locations, the overall coverage area of ​​the doped conductive areas is reduced. This optimizes the pattern of the battery's doped conductive areas, reduces carrier recombination, and improves the energy conversion efficiency of the battery while ensuring the reliability of the battery's electrical connection. Furthermore, even without considering the limitation of the width of the first junction area 11 by the width of the first junction 6, from the perspective of optimizing current collection, the width of the first junction area 11 can be set to be wider than the width of the first electrode area 12. Increasing the width of the first junction area 11 increases its area. The metal electrode collects current, and the junction collects the surrounding current on the one hand, and gathers the current discharged by the metal electrode on the other hand. The junction performs a dual function compared to the metal electrode. The first junction area 11 and the first electrode area 12 are doped conductive regions. The lateral transport capability of charge carriers in doped conductive regions is strong. Therefore, the width of the first junction area 11 is wider than the width of the first electrode area 12, which enhances the transport and collection of charge carriers around the junction. Narrowing the width of the first electrode area 12 is adapted to the current collection of the metal electrode part, reducing parasitic absorption, and ultimately achieving optimized collection of charge carriers on the substrate and improving current transmission efficiency.

[0088] Exemplarily, the solar cell can be a back-contact cell. A back-contact cell refers to a solar cell in which the light-facing surface of the cell wafer has no electrodes, and both the positive and negative electrodes are provided on the backlight side of the cell wafer, which can reduce the shielding of the electrodes to the cell wafer, increase the short-circuit current of the cell wafer, and improve the energy conversion efficiency of the cell wafer. Correspondingly, the backlight side of the substrate of the back-contact cell includes a first region 1 and a second region 2. The conduction types of the first region 1 and the second region 2 are opposite and are spaced apart and isolated by a spacer region 3. The first region 1 and the second region 2 can be alternating strip regions or alternating "rich" - shaped regions in shape, forming an interdigitated pattern. The direction in which the first region 1 and the second region 2 are alternately arranged can be defined as the direction in which each strip region is alternately arranged, or the direction in which the strip regions corresponding to the fine grid electrodes of the interdigitated finger regions are alternately arranged, such as the first direction shown in FIG. 1.

[0089] Exemplarily, the solar cell can also not be a back-contact cell. One side of the solar cell substrate is the positive electrode, and the other side is the negative electrode. The first region 1 and the second region 2 are distributed on at least one side of the substrate. The conduction types of the first region 1 and the second region 2 located on the same side of the substrate are the same. The first region 1 and the second region 2 can be alternating strip regions. The direction in which the first region 1 and the second region 2 are alternately arranged can be defined as the direction in which each strip region is alternately arranged, such as the first direction shown in FIG. 1. The first region 1 and the second region 2 of the solar cell can be separated from each other and not connected; they can also be connected by a connection region, and the connection region is a doped conductive region with the same conduction type as the first region 1 and the second region 2.

[0090] All of the above battery types can form a first protruding portion 111 in the first joint portion setting area 11 of the first region 1 according to the above description, without adjusting the width range of the first joint portion 6, and reasonably optimizing the doped conductive region pattern to achieve the purpose of improving the energy conversion efficiency of the battery while ensuring the electrical connection reliability of the battery.

[0091] In the actual application process, the embodiments of the present application do not specifically limit the material and conduction type of the substrate. Exemplarily, the above substrate can be a silicon substrate. Alternatively, the above substrate can also be a germanium-silicon substrate, a germanium substrate, a gallium arsenide substrate or any other semiconductor material substrate. The conduction type of the substrate can be an N-type semiconductor substrate, a P-type semiconductor substrate or an intrinsic semiconductor substrate.

[0092] The first and second regions described above are the doped conductive regions of the battery, each containing a doped semiconductor layer located above and / or within the substrate surface. In terms of materials, the doped semiconductor layers can be made of silicon, silicon germanium, germanium, or gallium arsenide, among other semiconductor materials. Regarding the arrangement of matter, the crystal phases of the first and second regions can be amorphous, microcrystalline, nanocrystalline, single-crystal, or polycrystalline, meaning the doped semiconductor layers in the first and second regions can have amorphous, microcrystalline, nanocrystalline, single-crystal, or polycrystalline phases. In terms of doping concentration, the doping concentration of the doped semiconductor layers in the first and second regions is higher than the doping concentration of the substrate. Regarding conductivity type, for back-contact batteries, the conductivity type of the first or second region can be opposite to or the same as the conductivity type of the substrate, as long as the conductivity types of the first and second regions are opposite. For non-back-contact batteries, the conductivity type of the first and second regions on one side of the substrate can be opposite to the conductivity type of the substrate; the conductivity type of the first and second regions on one side of the substrate can be the same as the conductivity type of the substrate; or, the conductivity type of the first and second regions on one side of the substrate can be opposite to the conductivity type of the substrate, while the conductivity type of the first and second regions on the other side of the substrate can be the same as the conductivity type of the substrate, as long as the conductivity type of the first and second regions on the same side is ensured to be the same. The thickness of the first and second regions can be set according to actual needs and is not specifically limited here.

[0093] In practical applications, the first region can be formed directly within the substrate surface (i.e., the first region has a doped semiconductor layer located within the substrate surface) or directly on the substrate surface (i.e., the first region has a doped semiconductor layer located above the substrate surface). Alternatively, the back contact cell also includes a first passivation layer located between the substrate surface and the first region. In this case, the first passivation layer and the first region (with its doped semiconductor layer) can constitute a selective contact structure to achieve chemical passivation of the substrate's back surface and selective collection of carriers of the corresponding conductivity type, reducing the carrier recombination rate on the back surface side and improving the photoelectric conversion efficiency of the back contact cell.

[0094] Specifically, the material of the first passivation layer can be determined based on the material of the first region and the type of selective contact structure formed by the first passivation layer and the first region in the actual application scenario, without specific limitations here.

[0095] For example, when the selective contact structure formed by the first passivation layer and the first region is a tunneling passivation contact structure, the first region (the doped semiconductor layer) is a doped polysilicon layer, and the first passivation layer is a tunneling passivation layer. The material of the tunneling passivation layer may include silicon oxide, silicon carbide, aluminum oxide, or titanium oxide, etc.

[0096] For example, when the selective contact structure formed by the first passivation layer and the first region is a heterogeneous contact structure, the first region (the doped semiconductor layer) is a doped amorphous silicon layer and / or a doped microcrystalline silicon layer, and the first passivation layer is an intrinsic amorphous silicon layer and / or an intrinsic microcrystalline silicon layer.

[0097] Regarding the second region mentioned above, it can be formed directly within the substrate surface (i.e., the second region has a doped semiconductor layer located within the substrate surface) or directly on the substrate surface (i.e., the second region has a doped semiconductor layer located above the substrate surface). Alternatively, the back contact cell also includes a second passivation layer located between the substrate surface and the second region. In this case, the second passivation layer and the second region (with its doped semiconductor layer) can constitute a selective contact structure to achieve chemical passivation of the substrate's back surface and selective collection of carriers of the corresponding conductivity type, reducing the carrier recombination rate on the back surface side and improving the photoelectric conversion efficiency of the back contact cell. Specifically, the material of the second passivation layer can refer to the material of the first passivation layer described above, and will not be repeated here.

[0098] For example, taking a first region having a doped semiconductor layer located within the substrate surface and a doped semiconductor layer located above the substrate surface, the doped semiconductor layer located above the substrate surface may be N-type doped polysilicon, and the doped semiconductor layer located within the substrate surface may be an inner extension layer with N-type doping formed on the substrate; when a first passivation layer is present, the first passivation layer is located between the doped semiconductor layer located within the substrate surface and the doped semiconductor layer located above the substrate surface. For example, when the first passivation layer is a tunneling passivation layer, the first region has stacked N-type doped polysilicon, a tunneling passivation layer, and an inner extension layer.

[0099] For example, taking a second region having a doped semiconductor layer located within the substrate surface and a doped semiconductor layer located above the substrate surface, the doped semiconductor layer located above the substrate surface may be P-type doped polysilicon, and the doped semiconductor layer located within the substrate surface may be an inner extension layer with P-type doping formed on the substrate; when a second passivation layer is provided, the second passivation layer is located between the doped semiconductor layer located within the substrate surface and the doped semiconductor layer located above the substrate surface. For example, when the second passivation layer is a tunneling passivation layer, the second region is provided with stacked P-type doped polysilicon, a tunneling passivation layer, and an inner extension layer.

[0100] Optionally, in some embodiments, in the alternating arrangement direction of the first region 1 and the second region 2, the opposite sides of the first joint setting area 11 protrude towards the adjacent spacing area 3 relative to the corresponding side edges of the first electrode setting area 12, forming a first protruding portion 111. Thus, the pattern of the first region 1 is such that both sides of the first joint setting area 11 protrude outward relative to the first electrode setting area 12. When the width of the first joint setting area 11 is limited, both sides of the first electrode setting area 12 can be narrowed inward to optimize the pattern.

[0101] As shown in Figures 1 and 5, in some embodiments, when the first joint setting area 11 has a first protruding portion 111, in the alternating arrangement direction of the first region 1 and the second region 2, the widths of the second electrode setting area 22 and the second joint setting area 21 in the same second region 2 are equal, that is, the second electrode setting area 22 and the second joint setting area 21 in the same second region 2 have an equal width structure. At this time, since the first region 1 has a first protruding portion 111 protruding towards the adjacent interval region 3, the distance between the first electrode setting area 12 and the adjacent second electrode setting area 22 in the first region 1 and the adjacent second region 2 is greater than the distance between the first protruding portion 111 of the first joint setting area 11 and the adjacent second electrode setting area 22.

[0102] Example 1: The width of the first joint setting area 11 is set to be wider than that of the first joint 6, and the width of the first electrode setting area 12 of the first region 1 is narrower than that of the first joint setting area 11, so that the first region 1 has a first protruding part 111. If the overall width of the second region 2 is consistent, that is, the second electrode setting area 22 and the second joint setting area 21 of the same second region 2 have the same width structure, then the gap area 3 between the first electrode setting area 12 of the first region 1 and the second region 2 is wider than the gap area 3 between the first joint setting area 11 and the second region 2. By ensuring that the width of the gap area 3 between the first electrode setting area 12 of the first region 1 and the second region 2 is larger, the leakage risk between the first region 1 and the second region 2 can be effectively reduced. On the other hand, increasing the width of the gap area 3, that is, increasing the area ratio of the gap area 3 on the substrate side, can improve the bifaciality of the cell and enhance the overall efficiency of the cell. Ensuring that the first bonding area 11 has a certain width ensures the reliability of the electrical connection between the first bonding area 6 and the interconnecting components, etc.; by narrowing the first electrode setting area 12 of the first region 1, the area ratio of the doped conductive region on one side of the substrate is reduced, parasitic absorption is reduced, the bifaciality of the solar cell is improved, and the overall efficiency of the solar cell is enhanced.

[0103] Example 2: The width of the first joint setting area 11 is set to be wider than the first joint 6, and the width of the first electrode setting area 12 of the first region 1 is narrower than the first joint setting area 11, so that the first region 1 has a first protrusion 111. The width of the first electrode setting area 12 in Example 2 is equal to the width of the first electrode setting area 12 in Example 1. On the basis that the overall width of the second region 2 in Example 1 remains the same, if the overall width of the second region 2 in Example 2 is increased compared to the overall width of the second region 2 in Example 1, the increased width is equal to the narrowing width of the first electrode setting area 12 compared to the first joint setting area 11 in Example 2. At this time, the width of the interval area 3 between the first electrode setting area 12 of the first region 1 and the second region 2 in Example 2 is narrower than the width of the interval area between the first electrode setting area 12 of the first region 1 and the second region 2 in Example 1. The width of the interval area 3 between the first joint setting area 11 and the second region 2 in Example 2 is smaller than the width of the interval area between the first joint setting area 11 and the second region 2 in Example 1. Taking a solar cell as a back-contact cell with an N-type substrate, a first region 1 being an N-type doped region, and a second region 2 being a P-type doped region as an example, the width of the first electrode setting region 12 of the N-type doped region is smaller than that of the first junction setting region 11, giving the N-type doped region a first protrusion 111. Simultaneously, the P-type doped region has a uniform width structure, and its overall width is greater than that of the second region 2 in Example 1. This increase is equal to the reduction in width of the first electrode setting region 12 compared to the first junction setting region 11, thereby increasing the PN junction area between the P-type doped region and the N-type substrate. This allows for the generation of more electron-hole pairs, thus increasing the current. Furthermore, the width of the first electrode setting region 12 of the N-type doped region is smaller than that of the first junction setting region 11, which has a limited width reduction. The width of the spacer region 3 is also smaller than that of the spacer region 3 in Example 1, resulting in a smaller base region width composed of the N-type doped region and the spacer region 3. This reduces the lateral path of minority carriers to the PN junction region, improving the carrier collection probability. For all the reasons mentioned above, this is beneficial to improving the energy conversion efficiency of solar cells.

[0104] Of course, the substrate can also be a P-type substrate. The first region 1 can be a P-type doped region, and the second region 2 can be an N-type doped region. The width of the first electrode setting region 12 of the P-type doped region is smaller than that of the first junction setting region 11, so that the P-type doped region has a first protrusion 111. At the same time, the N-type doped region has a uniform width structure, and the overall width of the N-type doped region is larger than that of the second region 2 in Example 1. The increased width is equal to the width of the first electrode setting region 12 being smaller than that of the first junction setting region 11. This can also increase the PN junction area between the N-type doped region and the P-type substrate, generating more electron-hole pairs, thereby increasing the current. Meanwhile, the width of the first electrode setting region 12 of the P-type doped region is smaller than that of the first junction setting region 11, which has a limited width reduction. The width of the spacer region 3 is smaller than that of the spacer region 3 in Example 1, so that the width of the base region composed of the P-type doped region and the spacer region 3 is reduced. The lateral path of the minority carriers generated here to the PN junction region is reduced, which increases the carrier collection probability and is also beneficial to improving the energy conversion efficiency of the solar cell.

[0105] Example 3: The width of the first joint setting area 11 is set to be wider than the first joint 6, and the width of the first electrode setting area 12 of the first region 1 is narrower than the first joint setting area 11, so that the first region 1 has a first protruding part 111. The width of the first electrode setting area 12 in Example 3 is equal to the width of the first electrode setting area 12 in Example 2. Based on the fact that the overall width of the second region 2 in Example 2 is equal and the width is increased, if the overall width of the second region 2 in Example 3 is further increased than the overall width of the second region 2 in Example 2, the width of the interval area 3 between the first electrode setting area 12 and the second region 2 in the first region 1 in Example 3 is smaller than the width of the interval area 3 between the first electrode setting area 12 and the second region 2 in the first region 1 in Example 2. The width of the interval area 3 between the first joint setting area 11 and the second region 2 in the first region 1 in Example 3 is smaller than the width of the interval area 3 between the first joint setting area 11 and the second region 2 in the first region 1 in Example 2. Taking a solar cell as a back-contact cell with an N-type substrate, a first region 1 being an N-type doped region and a second region 2 being a P-type doped region as an example, the width of the first electrode setting region 12 of the N-type doped region is smaller than that of the first junction setting region 11, so that the N-type doped region has a first protrusion 111. At the same time, the P-type doped region has a uniform width structure, and the overall width of the P-type doped region is larger than that of the second region 2 in Example 1. The increased width is greater than the reduced width of the first electrode setting region 12 compared to the first junction setting region 11 in Example 3. Therefore, compared to Example 2, Example 3 further increases the PN junction area between the P-type doped region and the N-type substrate, which can generate more electron-hole pairs and increase the current. Since the width of the spacer region 3 between the first electrode setting region 12 and the P-type doped region in Example 3 is smaller than that between the first electrode setting region 12 and the P-type doped region in Example 2, and since the width of the first electrode setting region 12 of the N-type doped region is reduced, the width of the spacer region 3 is also reduced. At this time, the width of the base region composed of the N-type doped region and the adjacent spacer region 3 is further reduced compared to Example 2. The lateral path of the minority carriers generated here to the PN junction region is further reduced, which further improves the carrier collection probability.

[0106] When the above technical solution is adopted, if the first region 1 has a first protrusion 111, the second electrode setting area 22 and the second joint setting area 21 in the same second region 2 can be of equal width. At this time, the distance between the first electrode setting area 12 and the adjacent second electrode setting area 22 is greater than the distance between the first protrusion 111 of the first joint setting area 11 and the adjacent second electrode setting area 22. By narrowing the first electrode setting area 12, narrowing the spacing area 3, or widening the second region 2, the pattern of the doped conductive area is optimized, thereby improving the energy conversion efficiency.

[0107] As shown in Figures 2, 4 and 5, based on any of the above embodiments, in this embodiment, when the first region 1 has a first protruding portion 111, in the alternating arrangement direction of the first region 1 and the second region 2, that is, in the first direction, a portion of at least one side of the second electrode setting region 22 is recessed relative to the remaining portion of the at least one side of the second electrode setting region 22 away from the adjacent interval region 3, forming a first recessed portion 221. The number of first recessed portions 221 on the same second region 2 can be one or more.

[0108] When the above technical solution is adopted, when the first electrode setting area 12 of the first region 1 is narrowed, the second electrode setting area 22 of the second region 2 can also be recessed inward to form a first recessed part 221. By locally narrowing the second electrode setting area 22 of the second region 2, the pattern of the second region 2 can be optimized as needed.

[0109] Optionally, in this embodiment, the first recessed portion 221 and the first protruding portion 111 are positioned and matched in shape (e.g., complementary in shape), the first protruding portion 111 is surrounded by the first recessed portion 221, and the first protruding portion 111 and the first recessed portion 221 are separated by a spacing region 3; at this time, in the alternating arrangement direction of the first region 1 and the second region 2, the distance between the first electrode setting area 12 and the adjacent second electrode setting area 22 can be equal to the distance between the first protruding portion 111 of the first joint setting area 11 and the first recessed portion 221 of the adjacent second electrode setting area 22. Because the distance between the first region 1 and the second region 2 of the solar cell may have some errors in actual measurement or fluctuate within a certain range due to the influence of the surrounding structure, the term "equal to" in this application should cover the cases of complete equality and substantially equality. Slightly greater than or slightly less than are both considered substantially equal. The case of substantially equal is applied, and the judgment is made according to the actual measurement results. For example, 10% or 20% of the distance measurement value can be selected as the fluctuation space, and the difference within the range of 10% or 20% can be considered as substantially equal.

[0110] For example, the width of the first joint area 11 is set to be wider than the first joint 6, and the width of the first electrode area 12 of the first region 1 is narrower than the first joint area 11, so that the first region 1 has a first protrusion 111. If the width of at least a local portion of the second region 2 in this embodiment is increased compared to the width of the corresponding local position of the second region 2 in Example 1 above, the width of the second region 2 can be increased overall or partially. The part with the increased width usually corresponds to the part of the first electrode area 12 that is narrower than the first joint area 11 in this embodiment. The increased width of the second region 2 is equal to or greater than the narrower width of the first electrode area 12 that is narrower than the first joint area 11 in this embodiment, and the width of the gap area 3 between the first electrode area 12 of the first region 1 and the second region 2 is greater than... In Example 2, the width of the gap region 3 between the first electrode setting area 12 of the first region 1 and the second region 2 remains unchanged or is slightly reduced. By forming a first recessed portion 221 by recessing the second electrode setting area 22 of the second region 2 close to and corresponding to the first protruding portion 111, the width of the gap region 3 between the first joint setting area 11 of the first region 1 and the first recessed portion 221 of the second region 2 is increased compared to the width of the gap region 3 between the first joint setting area 11 and the second region 2 in Example 2. This ensures that the width of the gap region 3 between the first region 1 and the second region 2 is equal. Compared to the case where the first protruding portion 111 and the first recessed portion 221 do not correspond, this ensures a sufficient gap distance and reduces the risk of the first joint setting area 11 and the second region 2 becoming conductive.

[0111] When the above technical solution is adopted, if the first joint setting area 11 of the first region 1 has a first protruding part 111, in order to ensure that the distance between the first protruding part 111 and the second electrode setting area 22 of the adjacent second region 2 meets the electrical isolation requirements, the first recessed part 221 formed in the second region 2 can be correspondingly matched with the first protruding part 111, so that the distance at that location is equal to the distance between the first electrode setting area 12 and the second electrode setting area 22. The above solution is only one way to achieve the distance between the first electrode setting area 12 and the second electrode setting area 22 being equal to the distance between the first protruding part 111 of the first joint setting area 11 and the adjacent second electrode setting area 22. It can also be achieved by adjusting the distribution density of the first region 1 and the second region 2, etc.

[0112] Optionally, in this embodiment, the first recessed portion 221 and the first protruding portion 111 are positioned and matched in shape, the first protruding portion 111 is surrounded by the first recessed portion 221, and the first protruding portion 111 and the first recessed portion 221 are separated by a gap region 3; at this time, in the alternating arrangement direction of the first region 1 and the second region 2, the distance between the first electrode setting area 12 and the adjacent second electrode setting area 22 can be smaller than the distance between the first protruding portion 111 of the first joint setting area 11 and the first recessed portion 221 of the adjacent second electrode setting area 22.

[0113] For example, the width of the first joint area 11 is set to be wider than the first joint 6, and the width of the first electrode area 12 of the first region 1 is narrower than the width of the first joint area 11, so that the first region 1 has a first protrusion 111. If the width of the second region 2 in this embodiment is at least partially increased compared to the width of the corresponding local position of the second region 2 in Example 1, the width of the second region 2 can be increased overall or partially. The part with the increased width usually corresponds to the part of the first electrode area 12 that is narrower than the first joint area 11 in this embodiment. The increased width of the second region 2 is greater than the narrower width of the first electrode area 12 that is narrower than the first joint area 11 in this embodiment, and the gap area 3 between the first electrode area 12 of the first region 1 and the second region 2 is... The width of the gap region 3 between the first electrode setting area 12 and the second region 2 in the first region 1 of Example 2 is reduced. By forming a first recessed portion 221 by recessing the second electrode setting area 22 in the second region 2 close to and corresponding to the first protruding portion 111, the width of the gap region 3 between the first joint setting area 11 in the first region 1 and the first recessed portion 221 in the second region 2 is increased or remains unchanged compared to the width of the gap region 3 between the first joint setting area 11 and the second region 2 in Example 2. This ensures a sufficient gap distance, especially by increasing the distance between the first electrode setting area 12 and the second electrode setting area 22, which respectively account for a larger proportion in the first region 1 and the second region 2, greatly reducing the risk of the first joint setting area 11 and the second region 2 becoming conductive.

[0114] When the above technical solution is adopted, if the first joint setting area 11 of the first region 1 has a first protruding part 111, in order to ensure that the distance between the first protruding part 111 and the second electrode setting area 22 of the adjacent second region 2 meets the electrical isolation requirements, the first recessed part 221 formed in the second region 2 can be correspondingly matched with the first protruding part 111, so that the distance at that location is smaller than the distance between the first electrode setting area 12 and the second electrode setting area 22. The above solution is only one way to achieve a distance between the first electrode setting area 12 and the second electrode setting area 22 that is greater than the distance between the first protruding part 111 of the first joint setting area 11 and the adjacent second electrode setting area 22. It can also be achieved by adjusting the distribution density of the first region 1 and the second region 2, etc.

[0115] As shown in Figures 3A, 3B and 4, based on any of the above embodiments, that is, based on the first protrusion 111 in the first region 1, the pattern of the second region 2 is further optimized. In the alternating arrangement direction of the first region 1 and the second region 2, that is, in the first direction, at least one side of the second joint setting area 21 protrudes toward the adjacent spacing area 3 relative to the same side edge of the second electrode setting area 22, forming the second protrusion 211.

[0116] When the first bonding area 11 has a first protrusion 111, similarly, since the second bonding area 4 is usually limited in size adjustment range to ensure reliable conductive connection with the interconnect, the width range of the second region 2 on the solar cell corresponding to the second bonding area 4 is also limited. However, in order to optimize the pattern of the conductive doped regions on the cell and obtain better energy conversion efficiency, this embodiment does not adjust the width range of the second bonding area 21 used to set the second bonding area 4, but only adjusts the width of the second electrode setting area 22 on the second region 2 where the second bonding area 4 is not set. By making individual adjustments to narrow the width of the second electrode setting area 22, the resulting pattern of the second region 2 is such that at least one side of the second bonding area 21 protrudes towards the adjacent interval area 3 relative to the same edge of the second electrode setting area 22, forming a second protruding portion 211. In this way, the size setting of the second bonding area 21 can be guaranteed, and by narrowing the doped conductive areas in other positions, the overall coverage area of ​​the doped conductive areas is reduced. The pattern of the conductive doped areas on the battery is reasonably optimized, and carrier recombination is reduced, so as to improve the energy conversion efficiency of the battery and ensure the electrical connection reliability of the battery. Furthermore, even without considering the limitation of the width of the second junction region 21 by the width of the second junction region 4, from the perspective of optimizing current collection, the width of the second junction region 21 can be set to be wider than the width of the second electrode region 22. Increasing the width of the second junction region 21 increases its area. The metal electrode collects current, and the junction collects the surrounding current on the one hand, and gathers the current discharged by the metal electrode on the other hand. The junction performs a dual function compared to the metal electrode. The second junction region 21 and the second electrode region 22 are doped conductive regions. The lateral transport capability of charge carriers in doped conductive regions is strong. Therefore, the width of the second junction region 21 is wider than the width of the second electrode region 22, which enhances the transport and collection of charge carriers around the junction. Narrowing the width of the second electrode region 22 is adapted to the current collection of the metal electrode part, reducing parasitic absorption, and ultimately achieving optimized collection of charge carriers on the substrate and improving current transport efficiency.

[0117] In this design, a second protrusion 211 is formed on one or both sides of the second joint area 21, and there may be one or more second protrusions 211 on each side. The pattern design for the second region 2 is also applicable to back-contact batteries and non-back-contact batteries, and its beneficial effects can be found in the description of the first region in the above embodiments, which will not be repeated here.

[0118] Optionally, in other embodiments, the first recessed portion 221 corresponds in position to the first protruding portion 111. The shapes of the first protruding portion 111 and the first recessed portion 221 are not limited, as long as there is a gap between the edges of the first protruding portion 111 and the first recessed portion 221 facing each other, so as to achieve isolation between the two regions. For example, if the size of the recessed portion of the first recessed portion 221 is larger than the size of the protruding portion of the first protruding portion 111, the first recessed portion 221 and the first protruding portion 111 may correspond in position but their shapes may not match.

[0119] Similarly, in other embodiments, the second recessed portion 121 corresponds in position to the second protruding portion 211. The shapes of the second protruding portion 211 and the second recessed portion 121 are not limited, as long as there is a gap between the edges of the second protruding portion 211 and the second recessed portion 121 facing each other, so as to achieve isolation between the two regions. For example, if the size of the recessed portion of the second recessed portion 121 is larger than the size of the protruding portion of the second protruding portion 211, the second recessed portion 121 and the second protruding portion 211 may correspond in position but their shapes may not match.

[0120] In some embodiments, in a direction perpendicular to the alternating arrangement direction of the first region 1 and the second region 2, i.e., in the second direction shown in Figures 3A, 3B, and 4, the second direction is perpendicular to the first direction. The first protruding portion 111 and the adjacent second protruding portion 211 are staggered, and their projections on a straight line parallel to the second direction do not overlap. The first protruding portion 111 and the adjacent second protruding portion 211 are separated by a spacing region 3. Since the first protruding portion 111 and the second protruding portion 211 are staggered, correspondingly, the first joint setting area 11 and the second joint setting area 21 are staggered. This facilitates the connection of the first joint portion 6 provided on the first joint setting area 11 with multiple conductive areas arranged along the first direction on the outer solder strip or conductive layer extending along the first direction. At the same time, it facilitates the connection of the second joint portion 4 provided on the second joint setting area 21 with multiple conductive areas arranged along the first direction on the outer solder strip or conductive layer extending along the first direction. This ensures that different solder strips or conductive areas are staggered in the second direction, avoiding short circuits or mutual interference.

[0121] For example, the first region 1 can be an N-type doped region, the second region 2 can be a P-type doped region, and both the first region 1 and the second region 2 can be strip-shaped regions. The first electrode setting region 12 is used to correspondingly set the first fine gate electrode, the first bonding region 11 is used to correspondingly set the first bonding region, the second electrode setting region 22 is used to correspondingly set the second fine gate electrode, and the second bonding region 21 is used to correspondingly set the second bonding region. The first region 1 and the second region 2 extend along the second direction. Multiple first bonding regions set on multiple first regions 1 and located in the same first direction are welded by a first solder strip. Multiple second bonding regions set on multiple second regions 2 and located in the same first direction are welded by a second solder strip. Since the first protrusion 111 and the second protrusion 211 are staggered in the second direction, the first bonding region and the second bonding region are staggered in the second direction, so that the first solder strip and the second solder strip are staggered, avoiding the contact between the first solder strip and the second solder strip leading to a short circuit. Alternatively, multiple first joints disposed on multiple first regions 1 and located in the same first direction are electrically connected through multiple first conductive areas arranged in the same first direction on the conductive layer, and multiple second joints disposed on multiple second regions 2 and located in the same first direction are electrically connected through multiple second conductive areas arranged in the same first direction on the conductive layer, so as to facilitate the partitioning of the first conductive area and the second conductive area.

[0122] The same applies to the interdigitated pattern of the first region 1 and the second region 2. For example, the first region 1 includes multiple strip regions corresponding to the first fine gate electrode and at least one strip region corresponding to the first main gate electrode, with the strip region corresponding to the first fine gate electrode perpendicular to the strip region corresponding to the first main gate electrode. Similarly, the second region 2 includes multiple strip regions corresponding to the second fine gate electrode and at least one strip region corresponding to the second main gate electrode, with the strip region corresponding to the second fine gate electrode perpendicular to the strip region corresponding to the second main gate electrode. The first direction refers to the alternating arrangement direction of the strip regions corresponding to the first and second fine gate electrodes, i.e., the extension direction of the first and second main gate electrodes. The second direction refers to the extension direction of the strip regions corresponding to the first and second fine gate electrodes. Each strip region corresponding to the first fine gate electrode has a first bonding area 11, where a first bonding portion can be disposed. Each strip region corresponding to the second fine gate electrode has a second bonding area 21, where a second bonding portion can be disposed. Of course, the first bonding area 11 can be located on the strip region corresponding to the first main gate electrode, and the second bonding area 21 can be located on the strip region corresponding to the second main gate electrode, as long as the first bonding portion and the second bonding portion are staggered in the second direction.

[0123] Optionally, in some embodiments, based on the above embodiments where the first protruding portion 111 and the second protruding portion 211 are staggered in the second direction, the projections of the first protruding portion 111 and the adjacent second protruding portion 211 on a straight line parallel to the alternating arrangement direction of the first region 1 and the second region 2 overlap. That is, the projections of the first protruding portion 111 and the adjacent second protruding portion 211 on a straight line parallel to the first direction overlap. This arrangement, on the one hand, can reduce the coverage area of ​​individual doped conductive regions by narrowing the doped conductive regions in other positions while ensuring the size setting of the joint setting area. With a certain arrangement density of the first region 1 and the second region 2 on the battery, the overall coverage area of ​​the doped conductive regions is reduced. On the other hand, when it is necessary to increase the arrangement density of the first region 1 and the second region 2 on the battery, the arrangement spacing of the first region 1 and the second region 2 in the first direction can be further reduced. While meeting the spacing requirements of the spacing region 3, the arrangement density of the first region 1 and the second region 2 on the battery can be further increased, thereby improving energy conversion efficiency and battery utilization.

[0124] Figure 3B is similar to Figure 3A, except that Figure 3B shows the case where the first region 1 has a first protruding portion 111 and a second recessed portion 121, and the second region 2 has a second protruding portion 211 and a first recessed portion 221. The first protruding portion 111 and the first recessed portion 221 are in corresponding positions; the second recessed portion 121 and the second protruding portion 211 are in corresponding positions. This configuration, on the one hand, reduces the coverage area of ​​individual doped conductive regions by narrowing the doped conductive regions in other locations, while ensuring the size of the joint area. Furthermore, by making one doped conductive region protrude while the other narrows, the overall coverage area of ​​the doped conductive regions is balanced. Given a fixed arrangement density of the first region 1 and the second region 2 on the battery, this further reduces the overall coverage area of ​​the doped conductive regions. On the other hand, when it is necessary to increase the arrangement density of the first region 1 and the second region 2 on the battery, the arrangement spacing in the first direction can be further reduced. While meeting the spacing requirements of the interval region 3, this further increases the arrangement density of the first region 1 and the second region 2 on the battery, improving energy conversion efficiency and battery utilization.

[0125] As shown in Figure 4, based on the embodiments described above where the second region 2 has a second protruding portion 211, this embodiment further optimizes the first region 1. In the alternating arrangement direction of the first region 1 and the second region 2, i.e., in the first direction, a portion of at least one side of the first electrode setting area 12 is recessed relative to the remaining portion of the at least one side of the first electrode setting area 12, away from the adjacent interval region 3, forming a second recessed portion 121. The number of second recessed portions 121 on the same first region 1 can be one or more. Similar to the reason for providing the first recessed portion 221 in the second region 2, the first electrode setting area 12 of the first region 1 can also be recessed inward to form a second recessed portion 121. By locally narrowing the first electrode setting area 12 of the first region 1, the pattern of the first region 1 can be optimized as needed.

[0126] Optionally, in this embodiment, the second recessed portion 121 and the second protruding portion 211 are positioned and matched in shape, the second protruding portion 211 is surrounded by the second recessed portion 121, and the second protruding portion 211 and the second recessed portion 121 are separated by the interval region 3. Similarly, when the second joint setting area 21 of the second region 2 has the second protruding portion 211, in order to ensure that the distance between the second protruding portion 211 and the first electrode setting area 12 of the adjacent first region 1 meets the electrical isolation requirements, the second recessed portion 121 formed in the recess on the first region 1 can be matched with the second protruding portion 211, so that the distance at this point is equal to the distance between the second electrode setting area 22 and the first electrode setting area 12, thereby ensuring that the width of the interval region 3 between the first region 1 and the second region 2 is equal. Compared with the case where the second protruding portion 211 and the second recessed portion 121 do not match, sufficient spacing distance is ensured, reducing the risk of conduction between the second joint setting area 21 and the first region 1.

[0127] The patterns of the first region 1 and the second region 2 described in any of the above embodiments can be applied to the pattern optimization of solar cells with high-resistance dense grids. Dense-grid solar cells narrow the spacing of the metal grid lines, reducing recombination during electron movement perpendicular to the grid lines. Simultaneously, the overall area of ​​the fine grid lines on the cell increases, reducing series resistance, increasing the fill factor, and improving cell efficiency. The corresponding spacing between the first and second fine grid electrodes will decrease, and consequently, the widths of the first and second regions will decrease. At this time, while ensuring that the widths of the first and second joints meet reliability requirements, the first joint area and / or the second joint area can form a first protrusion and / or a second protrusion. Correspondingly, the second region can have a first recessed portion corresponding to the first protrusion, and the first region can have a second recessed portion corresponding to the second protrusion. The remaining positions are narrowed normally according to the grid spacing. The pattern optimization scheme in this application is more suitable for dense-grid solar cells, and can further improve cell conversion efficiency while ensuring module reliability.

[0128] As shown in Figure 4, it should be noted that on the same surface of the solar cell, the first region 1 with the first protrusion 111 can exist in one or more of the following combinations: the second region 2 with the second protrusion 211, the second region 2 with the first recess 221, the first region 1 with the second recess 121, the second region 2 without the second protrusion 211, the second region without the first recess 221, and the first region 1 without the second recess 121. All of these can be regarded as pattern optimization of the conductive doped region.

[0129] As shown in Figures 1-6, in some possible implementations, in the alternating arrangement direction of the first region 1 and the second region 2, i.e., in the first direction, the protrusion width of the first protrusion 111 on one side relative to the first electrode setting region 12 connected to the first joint setting region it belongs to is 40μm to 80μm. Specifically, the protrusion width of the first protrusion 111 on one side can be 40μm, 50μm, 60μm, 70μm, 80μm, etc. The protrusion widths of the first protrusions 111 on both sides of the same first joint setting region 11 can be the same or different. When the protrusion widths are the same, the first electrode setting region 12 and the first joint setting region 11 are symmetrical with respect to the second direction. The distance between the first grid electrode 7 and the first joint 6 and the two sides can be the same, ensuring the uniformity of current collection and reducing the current transmission time.

[0130] Similarly, the protrusion width of the second protrusion 211 on one side relative to the same side of the second electrode setting area 22 connected to the second joint setting area is 40μm to 80μm. Specifically, the protrusion width of the second protrusion 211 on one side is 40μm, 50μm, 60μm, 70μm, 80μm, etc. The protrusion widths of the second protrusions 211 on both sides of the same second joint setting area 21 can be the same or different, with the same effect as the first protrusion 111, and will not be described again.

[0131] Thus, if the width of the first joint area 11 remains essentially unchanged, and the protrusion width is less than this range, it indicates that the narrowing of the first electrode area 12 is relatively small, resulting in an insignificant optimization effect. Conversely, if the protrusion width is greater than this range, it indicates that the narrowing of the first electrode area 12 is relatively large, affecting the current collection in the first region 1 and requiring higher precision in the subsequent setting of the first grid electrode 7. The reason for selecting the range of the second protrusion 211 is the same as that for selecting the range of the first protrusion 111, and will not be repeated here.

[0132] For example, in some possible implementations, in the alternating arrangement direction of the first region 1 and the second region 2, i.e., in the first direction, the ratio of the protrusion width of the first protrusion 111 on one side relative to the width of the first electrode setting area 12 on the same side to the width of the first electrode setting area 12 is 0.05 to 0.5. Specifically, the ratio of the protrusion width of the first protrusion 111 on one side to the width of the first electrode setting area 12 can be 0.05, 0.1, 0.2, 0.3, 0.4, 0.5, etc. The ratio of the protrusion width of the first protrusion 111 on both sides of the same first joint setting area 11 to the width of the first electrode setting area 12 can be the same or different. When the ratio of the protrusion width on both sides to the width of the first electrode setting area 12 is the same, the first electrode setting area 12 and the first joint setting area 11 are symmetrical structures relative to the second direction. The distance between the first grid electrode 7 and the first joint 6 and the width on both sides can be the same, ensuring the uniformity of current collection and reducing the current transmission time.

[0133] Similarly, the ratio of the protrusion width of the second protrusion 211 on one side relative to the width of the second electrode setting area 22 to the width of the second electrode setting area 22 is 0.05 to 0.5. Specifically, the ratio of the protrusion width of the second protrusion 211 on one side to the width of the second electrode setting area 22 is 0.05, 0.1, 0.2, 0.3, 0.4, 0.5, etc. The ratio of the protrusion width of the second protrusion 211 on both sides of the same second joint setting area 22 to the width of the second electrode setting area 22 can be the same or different, with the same effect as the first protrusion 111, and will not be described again.

[0134] Similar to the selection of the protruding width, if the ratio of the protruding width to the width of the first electrode setting area 12 is less than a certain range, assuming the width of the first joint setting area 11 remains essentially unchanged, it indicates that the narrowing width of the first electrode setting area 12 is small, and the optimization effect is not significant. If the ratio of the protruding width to the width of the first electrode setting area 12 is greater than a certain range, it indicates that the narrowing width of the first electrode setting area 12 is large, affecting the current collection of the first region 1 and requiring higher precision in the subsequent setting of the first grid electrode 7. The reasons for selecting the range of the second protruding portion 211 are the same as those for selecting the range of the first protruding portion 111, and will not be repeated here.

[0135] As shown in Figures 5 and 6, in some embodiments, the solar cell further includes a first grid electrode 7 and a first junction 6. In the alternating arrangement direction of the first region 1 and the second region 2, i.e., in the first direction, the ratio of the width of the first junction 6 to the width of the first electrode placement area 12 is 0.35 to 1.4. Specifically, the width ratio can be 0.35, 0.5, 0.64, 0.7, 0.9, 1.0, 1.2, 1.4, etc. A smaller width ratio means a relatively larger width of the first electrode placement area 12, and a larger width ratio means a relatively smaller width of the first electrode placement area 12. When the first junction 6 is a first junction, the width of the first junction is larger, resulting in a larger width ratio. When the first junction 6 is a thickened grid line segment, the width of the thickened grid line segment is smaller, resulting in a smaller width ratio. If the width ratio is less than 0.35, the width of the first joint 6 is too small, which is not conducive to reliable connection with the interconnect. Alternatively, the width of the first electrode setting area 12 is too large, resulting in insufficient narrowing of the first electrode setting area 12 and insignificant optimization effect. If the width ratio is greater than 1.4, the width of the first joint 6 is too large, which is not conducive to electrical isolation and results in greater material consumption. Alternatively, the width of the first electrode setting area 12 is too small, which is not conducive to carrier collection and increases the alignment accuracy requirement of the first gate electrode 7. It should be noted that the width of the first joint 6 is smaller than the width of the first joint setting area 11.

[0136] For example, in a back-contact solar cell, taking an N-type substrate, a first region 1 as an N-type doped region, and a second region 2 as a P-type doped region, the width of the first electrode setting region 12 in the N-type doped region is smaller than that of the first junction setting region 11, while the width of the P-type doped region is increased. This increases the area of ​​the PN junction region between the P-type doped region and the N-type substrate, generating more electron-hole pairs and thus increasing the current. Simultaneously, with the width of the first electrode setting region 12 in the N-type doped region decreasing and the width of the spacer region 3 remaining constant, the width of the base region composed of the N-type doped region and the spacer region 3 decreases. This reduces the lateral path of minority carriers to the PN junction region, improving the carrier collection probability. Therefore, for these reasons, a smaller width of the first electrode setting region 12 in the N-type doped region is more beneficial for improving the energy conversion efficiency of the solar cell. Correspondingly, a larger ratio of the width of the first junction 6 to the width of the first electrode setting region 12 is more beneficial for improving the energy conversion efficiency of the solar cell.

[0137] In some embodiments, the ratio of the width of the first gate electrode 7 to the width of the first electrode setting region 12 is 0.015 to 0.3, specifically 0.015, 0.02, 0.05, 0.1, 0.15, 0.2, 0.25, 0.3, etc. When the width ratio is less than 0.015, the width of the first gate electrode 7 is too small, which is not conducive to current collection and results in a large resistance; or the width of the first electrode setting region 12 is too small, which is not conducive to pattern optimization. When the width ratio is greater than 0.3, the width of the first gate electrode 7 is too large, which is not conducive to electrical isolation and results in a large material consumption; or the width of the first electrode setting region 12 is too small, which is not conducive to carrier collection.

[0138] For example, the width of the first gate electrode 7 is 10μm to 35μm, specifically it can be 10μm, 15μm, 20μm, 23μm, 24μm, 25μm, 26μm, 27μm, 30μm, 35μm, etc., and more specifically it can be 24μm to 27μm. The width of the first electrode setting area 12 is 150μm to 600μm, specifically it can be 150μm, 220μm, 280μm, 300μm, 350μm, 400μm, 450μm, 500μm, 550μm, 600μm, etc.

[0139] As shown in Figures 5 and 6, in some possible implementations, the solar cell further includes a second grid electrode 5 and a second junction 4. In the alternating arrangement direction of the first region 1 and the second region 2, i.e., in the first direction, the ratio of the width of the second junction 4 to the width of the second electrode placement area 22 is 0.2 to 0.7, specifically 0.2, 0.25, 0.3, 0.35, 0.49, 0.55, 0.7, etc. A smaller width ratio means a relatively larger width of the second electrode placement area 22, and a larger width ratio means a relatively smaller width of the second electrode placement area 22. When the second junction 4 is a second junction, its width is larger, resulting in a larger width ratio. When the second junction 4 is a thickened section of the grid line, its width is smaller, resulting in a smaller width ratio. If the width ratio is less than 0.2, the width of the second junction 4 is too small, which is not conducive to reliable connection with the interconnect. If the width ratio is greater than 0.7, the width of the second junction 4 is too large, which is not conducive to electrical isolation and results in greater material consumption. It should be noted that the width of the second joint 4 is smaller than the width of the second joint setting area 21.

[0140] For example, in a back-contact solar cell with an N-type substrate, a first region 1 being an N-type doped region, and a second region 2 being a P-type doped region, the width of the first electrode placement region 12 in the N-type doped region is smaller than that of the first junction region 11, while the width of the P-type doped region is increased. This increases the area of ​​the PN junction region between the P-type doped region and the N-type substrate, allowing for the generation of more electron-hole pairs and thus increasing the current. Therefore, for these reasons, a larger width of the second electrode placement region 22 in the P-type doped region is more beneficial for improving the energy conversion efficiency of the solar cell. Correspondingly, a smaller ratio of the width of the second junction 4 to the width of the second electrode placement region 22 is more beneficial for improving the energy conversion efficiency of the solar cell.

[0141] In some embodiments, the ratio of the width of the second gate electrode 5 to the width of the second electrode setting area 22 is 0.012 to 0.12, specifically 0.012, 0.013, 0.05, 0.08, 0.1, 0.12, etc. When the width ratio is less than 0.012, the width of the second gate electrode 5 is too small, which is not conducive to current collection and results in high resistance. When the width ratio is greater than 0.12, the width of the second gate electrode 5 is too large, which is not conducive to electrical isolation and results in high material consumption.

[0142] For example, the width of the second gate electrode 5 is 10μm to 35μm, specifically it can be 10μm, 15μm, 20μm, 23μm, 24μm, 25μm, 26μm, 27μm, 30μm, 35μm, etc., and more specifically it can be 24μm to 27μm. The width of the second electrode setting area 22 is 300μm to 800μm, specifically it can be 300μm, 400μm, 450μm, 500μm, 550μm, 600μm, 650μm, 700μm, 750μm, 800μm, etc.

[0143] The following provides three sets of examples and three sets of comparative examples for parameter comparison:

[0144] Comparative Example 1: Measurements were taken of multiple solar cells using a back-contact cell. The substrate was an N-type substrate. The first region was an N-type doped region, the second region was a P-type doped region, the first region had an equal width structure, the second region had an equal width structure, and the spacer region had an equal width structure. The widths of the first region, the second region, and the spacer region in Comparative Example 1 can be defined as the original widths.

[0145] In Example 1, the solar cell is the same as that in Comparative Example 1. The width of the first junction area 11 in Example 1 is the same as the original width of the first region in Comparative Example 1, and the width of the second region 2 in Example 1 is the same as the original width of the second region in Comparative Example 1. The difference is that the first electrode area 12 in Example 1 is narrower than the first junction area 11, while the width of the first junction area 11 remains unchanged, so that the first region forms a first protrusion 111. At this time, the gap area 3 between the first electrode area 12 and the second region 2 is wider than the gap area in Comparative Example 1, and the width of the gap area 3 between the first junction area 11 and the second region 2 remains unchanged from the original width of the gap area in Comparative Example 1.

[0146] By comparing Example 1 and Comparative Example 1, the following parameter comparison table 1 is obtained:

[0147] Table 1. Parameter Comparison Table for Comparative Example 1 and Example 1

[0148] By comparison, it was found that the short-circuit current was improved after the width of the first electrode setting region 12 of the N-type doped region in Example 1 was reduced.

[0149] Comparative Example 2, by measuring multiple solar cells, also uses back-contact cells, and is basically the same as the scheme of Comparative Example 1. The difference is that the overall width of the second region in Comparative Example 2 is increased compared to the original width of the second region in Comparative Example 1, and it is a structure of equal width. The width of the spacing region in Comparative Example 2 is decreased compared to the original width of the spacing region in Comparative Example 1. The decrease in width is equal to the increase in width of the second region in Comparative Example 2 compared to the second region in Comparative Example 1.

[0150] Example 2 is basically the same as the scheme in Example 1, except that the overall width of the second region 2 in Example 2 is increased compared to the overall width of the second region 2 in Example 1. The increased width is equal to the width by which the first electrode setting area 12 is narrowed compared to the first joint setting area 11. In Example 2, the width of the interval region 3 between the first electrode setting area 12 and the second region 2 in the first region 1 is equal to the original width of the interval region in Comparative Example 1. The second region 2 forms a first recessed portion 221 corresponding to the first protruding portion 111. The width of the interval region 3 between the first protruding portion 111 and the second recessed portion 221 in the first joint setting area 11 is equal to the original width of the interval region in Comparative Example 1.

[0151] By comparing Example 2 and Comparative Example 2, the following parameter comparison table 2 is obtained:

[0152] Table 2. Parameter comparison table for Comparative Example 2 and Example 2

[0153] By comparison, it was found that when the width of the first electrode setting region 12 of the N-type doped region in Example 2 is reduced and then correspondingly added to the P-type doped region to form the first recessed region 221 that matches the first protruding region 111, the conversion efficiency is improved, the fill factor is improved, and the short-circuit current is improved.

[0154] Comparative Example 3 is basically the same as the scheme in Comparative Example 2. The difference is that the overall width of the second region in Comparative Example 3 is further increased on the basis of the already increased width of the second region in Comparative Example 2, and the overall width of the interval region is further decreased on the basis of the already decreased width of the interval region in Comparative Example 2. The further decrease in width of the interval region is equal to the further increase in width of the second region.

[0155] Example 3 is basically the same as the scheme in Example 2. The difference is that, based on Example 2, the overall width of the second region in Example 3 is increased compared to the overall width of the second region in Example 2, and the overall width of the interval region in Example 3 is decreased compared to the overall width of the interval region in Example 2. The decrease in the width of the interval region is equal to the increase in the width of the second region. The second region 2 also forms a first recessed portion 221 corresponding to the first protruding portion 111. The width of the interval region 3 between the first region 1 and the second region 2 is equal.

[0156] By comparing Example 3 and Comparative Example 3, the following parameter comparison table 3 is obtained:

[0157] Table 3. Parameter comparison table for Comparative Example 3 and Example 3

[0158] By comparison, it was found that when the width of the first electrode setting region 12 of the N-type doped region in Example 3 is reduced, it is correspondingly increased on the P-type doped region. When the width of the interval region 3 between the first region 1 and the second region 2 is reduced on the basis of the original width, and the reduced width is also increased to the overall width of the second region 2 and forms the first recessed region 221 that matches the first protruding part 111, the conversion efficiency is improved, the fill factor is improved, and the short-circuit current is improved.

[0159] It is evident that, overall, the patterning scheme in this application is beneficial to improving the energy conversion efficiency of the battery.

[0160] Implementation Plan B

[0161] Referring to Figures 7-10, this application provides a solar cell. The solar cell can be a double-contact cell, meaning one of the positive and negative electrodes is disposed on the front side and the other on the back side. Alternatively, the solar cell provided in this application can also be a back-contact cell, meaning the positive and negative electrodes are spaced apart on the back side.

[0162] As shown in Figures 7 and 8, the solar cell provided in this embodiment includes a semiconductor substrate 8, a first doped semiconductor layer 9, and a first electrode unit 16. The first electrode unit 16 includes a first bonding portion 6 and a first gate electrode 7. The semiconductor substrate 8 includes a first surface and a second surface facing each other. The first doped semiconductor layer 9 is disposed on a local area (e.g., a first region) of the first surface. The first electrode unit 16 is disposed on the side of the first doped semiconductor layer 9 facing away from the semiconductor substrate 8. The first doped semiconductor layer 9 includes a plurality of first strip-shaped portions 13 extending along a first direction and spaced apart along a second direction. The first direction and the second direction intersect. With this configuration, the first strip-shaped portions 13 of the first doped semiconductor layer 9 are used to collect charge carriers, which are collected through the first gate electrode 7 disposed thereon, and the first bonding portion 6 leads out, facilitating the formation of photocurrent.

[0163] This application does not specifically limit the conductivity type of the first doped semiconductor layer. The conductivity type of the first doped semiconductor layer can be N-type (in which case the first electrode unit is the negative electrode) or P-type (in which case the first electrode unit is the positive electrode). As for the specific directions referred to by the first direction and the second direction, they can be set according to the shape of the first surface and actual needs. Optionally, the first direction and the second direction are perpendicular. For example, when the first surface is a rectangle, one of the first direction and the second direction is parallel to the extension direction of the long side of the rectangle, and the other is parallel to the extension direction of the short side of the rectangle.

[0164] The specific structure of the first electrode unit can be set according to actual needs.

[0165] For example, the first electrode unit 16 may include a plurality of first gate line electrodes 7 (also referred to as collector electrodes) extending along a second direction and spaced apart along a first direction. The first gate line electrodes 7 are disposed on the first strip portion 13. The widths of different portions of the first gate line electrodes 7 along the second direction may be substantially the same. The first connecting portion 6 is a part of the first gate line electrodes 7.

[0166] For example, as shown in FIG8, the first electrode unit 16 may include a plurality of first bonding portions 6 (also referred to as electrical bonding portions) and a plurality of first gate electrodes 7, wherein the plurality of first bonding portions 6 can be electrically connected to the plurality of first gate electrodes 7. The first bonding portions 6 and the first gate electrodes 7 are disposed on the first strip portion 13. Each first strip portion 13 is provided with at least one first gate electrode 7 and at least one first bonding portion 6. When at least one first strip portion 13 is provided with a plurality of first bonding portions 6, the different first bonding portions 6 located on the same first strip portion 13 are spaced apart along a second direction. Along the first direction, the width of the first bonding portion 6 may be greater than the width of the first gate electrode 7 to increase the contact area between the interconnect and the first electrode unit 16, reduce the contact resistance, facilitate the collection and discharge of charge carriers, and reduce transmission losses. The first bonding portion 6 may be a thickened section disposed in a portion of the first gate electrode 7, or it may be a conductive structure additionally fabricated on a portion of the first gate electrode 7 for electrical connection. Along the second direction, the difference in width between the first gate electrode 7 and the first junction 6 can be set according to actual needs.

[0167] As shown in Figures 7 and 8, along the second direction, the first strip 13 may include a first partition 14 and a second partition 15 other than the first partition 14, and the width w1 of the first partition 14 is greater than the width w2 of the second partition 15. The first partition 14 includes a first edge 17 and a second edge 18 that are oppositely disposed and extend along the second direction. Along the second direction, within the same first partition 14, the two endpoints of the first edge 17 are respectively offset from the two endpoints of the corresponding second edge 18; and / or, both the first edge 17 and the second edge 18 are provided with at least one first protruding unit 19 that is spaced apart along the second direction and protrudes along the first direction, and the first protruding units 19 of the first edge 17 and the second edge 18 are offset along the second direction.

[0168] It should be noted that the embodiments of this application do not specifically limit the shape of the first and second partitions included in the first strip-shaped portion, and can be set according to actual needs. For example, the first and / or second partitions can be shaped like a square, a rectangle, a parallelogram, an ellipse, etc. In addition, the first edge and the second edge in the first partition refer to two boundary lines in the outline of the first partition that are arranged opposite each other along a first direction and extend approximately along a second direction. For example, as shown in Figures 7 and 8, when the first partition 14 is a rectangle, the first edge 17 and the second edge 18 refer to the two long sides of the rectangle.

[0169] When the width of the first partition is greater than the width of the second partition, as shown in Figure 9, one of the first edge 17 and the second edge 18 of the first partition 14 may be approximately aligned with the boundary of the second partition 15 on the same side, and the other may protrude along a first direction relative to the edge of the second partition 15 on the same side. Alternatively, as shown in Figures 7 and 8, each of the first edge 17 and the second edge 18 of the first partition 14 may protrude along a first direction relative to the boundary of the second partition 15 on the same side (wherein, the distance by which each of the first edge 17 and the second edge 18 of the first partition 14 protrudes along the first direction relative to the boundary of the second partition 15 on the same side may be the same or different).

[0170] The shape of the first protruding unit set on the first edge and the second edge can be determined according to actual needs and the actual manufacturing process. For example, the first protruding unit can be rectangular, parallelogram-like, or triangular in shape.

[0171] For example, the angle β between one end boundary of at least one first protruding unit along the second direction and the second direction can be greater than or equal to 60° and less than or equal to 150°. For instance, the angle β between one end boundary of at least one first protruding unit along the second direction and the second direction can be 60°, 70°, 80°, 90°, 100°, 110°, 120°, 130°, 140°, or 150°. This configuration prevents one end of the first protruding unit along the second direction from having an excessively large protrusion distance while the other end has an excessively small protrusion distance due to an excessively large or small angle β. This ensures a more balanced carrier collection capacity across different portions of the first protruding unit along its length, reducing the carrier recombination rate. Simultaneously, it prevents the distance between the first protruding unit and the second strip from becoming too large due to an excessively large protrusion distance at one end along the second direction, reducing the risk of leakage. In the actual manufacturing process, the size of the included angle β can be controlled by adjusting the tilt angle of the laser spot used to pattern the first doped semiconductor layer using laser etching technology.

[0172] The first edge and the second edge have an undulating shape along the first direction due to the presence of the first protruding unit. Therefore, the undulating shape of the first edge and the second edge can be determined based on the shape of the first protruding unit and the number of the first protruding units. For example, the undulating shape of the first edge and the second edge can be square wave-like, sawtooth-like, or wave-like.

[0173] As shown in Figures 7 and 8, one of the two endpoints of the same first edge 17 and the same second edge 18 is located above the other along the second direction. Along the second direction, within the same first partition 14, the two endpoints of the first edge 17 are offset from the two endpoints of the corresponding second edge 18 in the second direction: the endpoint of the first edge 17 located above the other endpoint of the second edge 18 is offset along the second direction; and the endpoint of the first edge 17 located below the other endpoint of the second edge 18 is also offset along the second direction.

[0174] As shown in Figures 7 and 8, the first strip 13 includes a wider first partition 14 and a narrower second partition 15. The charge carriers collected by the first electrode unit 16 on the second partition 15 can flow to the first electrode unit 16 on the first partition 14 and be led out through the first electrode unit 16 on the first partition 14 to the in-string interconnect (the in-string interconnect is used to interconnect adjacent solar cells; the in-string interconnect can be a conductive structure such as a solder strip). The first partition 14 has a larger width w1, which helps to increase the interconnection area between the in-string interconnect and the first partition 14, thus reducing the interconnection resistance. For example, when the first electrode unit 16 includes a first grid electrode 7 and a plurality of first bonding portions 6, and the first grid electrode 7 is located at least in the second partition 15 and the first bonding portions 6 are located in the first partition 14, the first partition 14 in the first strip portion 13 has a larger width w1 (relative to the second partition 15). Therefore, even if the first bonding portions 6 located on the first partition 14 have a larger width, it can prevent excessive metal recombination loss caused by the edge region of the first bonding portion 6 extending along the second direction crossing the boundary of the first partition 14, or the risk of leakage and short circuit caused by the first bonding portion 6 contacting the heterogeneous doped semiconductor layer for back contact cells. While improving the electrical reliability of the solar cell, it can also reduce the process difficulty of forming the first bonding portions 6 on the first partition 14 and improve the yield of the solar cell. The second partition 15 has a smaller width w2, which is beneficial to reducing the parasitic absorption of the first doped semiconductor layer 9. Furthermore, as shown in Figures 7 and 8, when the two endpoints of the first edge 17 within the same first partition 14 are staggered from the two endpoints of the corresponding second edge 18 along the second direction, the first edge 17 within the same first partition 14 shifts relative to the second edge 18 along the second direction. This effectively widens the actual carrier collection range of the first partition 14 along the second direction and improves carrier collection efficiency. Simultaneously, even if interconnecting elements are disposed on the first surface of the solar cell, and the actual placement position shifts relative to the design position along the second direction due to operational errors, it can still be located on the first partition 14, increasing the contact probability between the interconnecting elements and the first partition 14. When both the first edge 17 and the second edge 18 are provided with at least one first protruding unit 19 spaced apart along the second direction and protruding along the first direction, the boundaries of different regions corresponding to the first protruding unit 19 and the recessed portion adjacent to the first protruding unit 19 in the same first partition 14 shift along the first direction. This effectively widens the actual carrier collection range of the first partition 14 along the first direction.Furthermore, when the first protruding unit 19 of the first edge 17 and the first protruding unit 19 of the second edge 18 are staggered along the second direction, the recessed portion adjacent to the first protruding unit 19 in one of the first edges 17 and 18, and the recessed portion adjacent to the first protruding unit 19 in the other, can be staggered. This results in different regions in the same first partition 14 having a larger width w1 along the second direction, which helps to ensure that different regions in the same first partition 14 have a larger actual carrier collection range along the first direction, thereby improving the carrier collection efficiency of the first doped semiconductor layer 9 and thus improving the working performance of the solar cell. Especially when the design space is limited, such as when it is necessary to control the coverage area of ​​the doped semiconductor layer on the first surface, such as when the doped semiconductor layer needs to be set more densely in a dense grid scheme, the actual carrier collection range can be improved through the above two methods, thus improving the battery performance.

[0175] In practical applications, the ratio of the width of the first partition and the width of the second partition can be set according to the size of the first electrode unit located in the first partition, the size of the first electrode unit located in the second partition, and actual requirements. As shown in Figure 7, the width w1 of the first partition 14 refers to the distance between two points along the first direction of a straight line extending in the second direction and passing through the first partition 14. The width w1 of the first partition 14 is the distance between these two points along the first direction. The width w2 of the second partition 15 can be determined by referring to the method for determining the width w2 of the first partition 14.

[0176] For example, along the first direction, the ratio of the width of the first partition and the second partition can be greater than or equal to 1.2 and less than or equal to 3. For instance, the ratio of the width of the first partition and the second partition can be 1.2, 1.5, 1.7, 1.9, 2, 2.2, 2.5, 2.7, 2.9, or 3, etc. This setting, with the ratio of the width of the first partition and the second partition within the aforementioned range, prevents the ratio from being too small, thus ensuring a large interconnect area between the first partition and the interconnect components, and / or reducing the manufacturing difficulty of the wider first junction portion on the first partition. Furthermore, it also prevents the ratio from being too large, thus preventing the width of the first partition from being too large and / or the width of the second partition from being too small, reducing the risk of parasitic absorption and leakage of the first doped semiconductor layer at the first partition, while simultaneously reducing the required process precision when manufacturing the first gate electrode on the second partition, thereby lowering the manufacturing difficulty.

[0177] In addition, the distance between the two endpoints of the first edge along the second direction of the first partition and the two endpoints of the second edge along the second direction can be determined according to the size of the first partition in the actual application scenario and the requirements for the actual carrier collection range of the first partition along the second direction.

[0178] For example, along the second direction, the ratio of the length of the first partition to the distance offset from at least one endpoint of the first edge and the corresponding endpoint of the second edge can be greater than 0 and less than or equal to 14.5. For instance, the ratio of the length of the first partition to the distance offset from at least one endpoint of the first edge and the corresponding endpoint of the second edge can be 0.5, 1, 2, 5, 8, 9, 10, 12, 13, 14, or 14.5, etc. This setting prevents the actual carrier collection range of the first partition along the second direction from being limited due to a small ratio, thus ensuring a high carrier collection efficiency for the first partition along the second direction. Furthermore, it prevents the length of the narrower edge portions of the first partition along the second direction from being excessively long due to the offset of the first and second edges along the first direction, ensuring that the edge portions at both ends of the first partition along the second direction also have a certain carrier collection range in the first direction. Simultaneously, it helps reduce the manufacturing difficulty of the first joint on the edge portions at both ends of the first partition along the second direction.

[0179] The length of the first protruding unit, the protrusion distance, and the spacing between two adjacent first protruding units can be determined based on the size of the first partition in the actual application scenario and the requirements for the actual carrier collection range of the first partition along the first direction. It should be noted that the protrusion distance of the first protruding unit along the first direction refers to the distance along the first direction between the outermost contour line of the first protruding unit and the outermost contour line of the recessed portion adjacent to that first protruding unit.

[0180] For example, along the second direction, the ratio of the length of at least one first protruding unit to the length of the first partition can be greater than or equal to one-fiftieth and less than or equal to one-half. For instance, the ratio of the length of at least one first protruding unit to the length of the first partition can be one-fiftieth, one-forty-fifth, one-forty-first, one-thirty-fifth, one-thirty-second, one-twenty-fifteenth, one-tenth, one-fifth, or one-half, etc. This setting prevents the first protruding unit from being too small, thus limiting the growth of the actual carrier collection range of the first partition due to the presence of the first protruding unit, resulting in higher carrier collection efficiency in the first partition. Furthermore, it prevents the proportion of the wider portion of the first partition due to the presence of the first protruding unit from being too large, which helps reduce parasitic absorption of the first doped semiconductor layer at the first partition. Secondly, for back-contact cells, it also prevents the leakage risk between the second doped semiconductor layer and the first partition from being too high due to the excessive length of the wider portion of the first partition, thus improving the operating performance of the solar cell.

[0181] For example, along the second direction, the ratio of the spacing between two adjacent first protruding units to the length of the first partition can be greater than or equal to one-fiftieth and less than or equal to three-quarters. For instance, the ratio of the spacing between two adjacent first protruding units to the length of the first partition can be one-fiftieth, one-forty-fifth, one-forty-first, one-thirty-fifth, one-thirty-second, one-twenty-fifteenth, one-tenth, one-fifth, one-half, or three-quarters, etc. This setting prevents the proportion of the length of the first protruding units in the first edge and / or the second edge from being too large due to an excessively small ratio, i.e., prevents the proportion of the wider portion of the first partition from being too large due to the presence of the first protruding units. Furthermore, it also prevents the proportion of the length of the first protruding units in the first edge and / or the second edge from being too small due to an excessively large ratio, i.e., prevents the effective growth of the actual carrier collection range corresponding to the first protruding units in the first partition from being ineffective. The application principle of this beneficial effect can be referred to the previous text and will not be repeated here.

[0182] For example, the ratio of the width of the first partition along the first direction to the distance of the protrusion of at least one first protruding unit along the first direction can be greater than or equal to 2 and less than or equal to 1000. For instance, the ratio of the width of the first partition along the first direction to the distance of the protrusion of at least one first protruding unit along the first direction can be 2, 3, 5, 8, 10, 50, 100, 200, 300, 500, 800, or 1000, etc. This setting prevents the width growth of the corresponding region within the first partition from being limited due to the presence of the first protruding unit in the first edge and / or second edge, thus ensuring a higher carrier collection efficiency for the first partition. Furthermore, it prevents the width of the region corresponding to the first protruding unit within the first partition from being too large due to an excessively large ratio, which helps reduce parasitic absorption of the first doped semiconductor layer at the first partition. Secondly, for back-contact cells, it also prevents a high risk of leakage between the second doped semiconductor layer and the region corresponding to the first protruding unit in the first partition, thus improving the operating performance of the solar cell.

[0183] In practical applications, the first edge and / or the second edge may have only one first protruding unit, or it may have multiple first protruding units spaced apart along the second direction. When the first edge and / or the second edge has multiple first protruding units, the lengths of the different first protruding units along the second direction may be the same or different.

[0184] For example, as shown in FIG8, the length L2 of at least one first protruding unit 19 located on the outer side of the first edge 17 and / or the second edge 18 along the second direction may be less than the length L2 of the remaining first protruding units 19 along the second direction. This configuration differentiates the lengths of the first protruding unit 19 located on the outer side of the first edge 17 and / or the second edge 18 along the first direction and the remaining first protruding units 19 along the second direction. Since there is a certain gap between the edge portion of the first joint 6 along the second direction and the edge of the first partition 14 extending along the first direction, when at least one first protruding unit 19 located on the outer side of the first edge 17 and / or the second edge 18 along the first direction has a smaller length L2 along the second direction, and the remaining first protruding units 19 have a larger length L2 along the second direction, the width w1 of the first partition 14 can be increased by the first protruding unit 19 located in the middle and with a larger length. This reduces the manufacturing difficulty of the first joint 6 and also reduces the risk of parasitic absorption and leakage current in the edge portion of the first partition 14 along the second direction where the first joint 6 is not located, thus enabling the solar cell to have higher operating performance.

[0185] In addition, when the first edge and / or the second edge are provided with multiple first protruding units, the distance that different first protruding units protrude along the first direction and the spacing between two adjacent first protruding units can be the same or different.

[0186] The distribution of the first protruding unit at the first edge and the first protruding unit at the second edge can be the same or different. When the distribution of the first protruding units at the first edge and the second edge is different, the first protruding units at the first edge and the second edge have differentiated settings, realizing diversified settings of the carrier collection range of the first partition corresponding to the first edge side and the second edge side.

[0187] For example, the number of first protruding units on the first edge may be greater than the number of first protruding units on the second edge.

[0188] For example, along the second direction, the length of at least one first protruding unit on the first edge is different from the length of the first protruding unit on the second edge. Specifically, the length of at least one first protruding unit on the first edge may be greater than the length of the first protruding unit on the second edge. Alternatively, the length of at least one first protruding unit on the first edge may be less than the length of the first protruding unit on the second edge.

[0189] For example, the distance by which at least one first protruding unit on the first edge protrudes along the first direction is different from the distance by which the first protruding unit on the second edge protrudes along the first direction. Specifically, the distance by which at least one first protruding unit on the first edge protrudes along the first direction may be greater than the distance by which the first protruding unit on the second edge protrudes along the first direction. Alternatively, the distance by which at least one first protruding unit on the first edge protrudes along the first direction may be less than the distance by which the first protruding unit on the second edge protrudes along the first direction.

[0190] For the second partition, which has a smaller width (relative to the first partition) in the first strip, the two side boundaries extending along the second direction in the second partition can be roughly straight lines. Alternatively, as shown in Figures 8 and 10, the two side boundaries extending along the second direction in the second partition 15 are provided with multiple second protruding units 29 that are spaced apart along the second direction and protrude along the first direction; this arrangement helps to increase the actual carrier collection range of the second partition 15 along the first direction and improve the carrier collection efficiency of the second partition 15. The length L4 of the second protruding unit 29 along the second direction, the distance w4 of the second protruding unit protruding along the first direction, and the spacing L5 between two adjacent second protruding units along the second direction can be set according to actual needs.

[0191] The dimensions of the second protruding unit (such as the distance of protrusion along the first direction, the length along the second direction, the spacing along the second direction, etc.) can be the same as or different from the dimensions of the first protruding unit.

[0192] For example, as shown in Figures 7 and 8, the distance w3 by which at least one first protruding unit 19 protrudes along the first direction can be greater than or equal to the distance w4 by which at least one second protruding unit 29 protrudes along the first direction; and / or, along the second direction, the spacing L3 between two adjacent first protruding units 19 is less than the spacing L5 between two adjacent second protruding units 29. With this configuration, the distance by which charge carriers are collected and led out to the interconnect via the first partition 14 is less than the distance by which charge carriers are collected and led out to the interconnect via the second partition 15. Therefore, when the distance by which at least one first protruding unit 19 protrudes along the first direction is large, it is beneficial to increase the actual charge carrier collection range of the first partition 14 along the first direction while enabling more charge carriers to be led out over a shorter distance, thus reducing the transmission resistance.

[0193] In some cases, as shown in Figures 7 and 8, the solar cell may further include a second doped semiconductor layer 10. The second doped semiconductor layer 10 has an opposite conductivity type to the first doped semiconductor layer 9. The location of the second doped semiconductor layer 10 on the semiconductor substrate 8 can be determined according to the type of solar cell and actual requirements. The second electrode unit can be disposed on the side of the second doped semiconductor layer facing away from the semiconductor substrate.

[0194] For example, in the case of a double-sided contact solar cell, a second doped semiconductor layer is disposed on at least a portion of the second side. When the second doped semiconductor layer is disposed only on a portion of the second side, it may include a plurality of second strip-shaped portions extending along a second direction and spaced apart along a first direction. In this case, the widths of the portions of the second strip-shaped portions along the second direction may be the same, or the second strip-shaped portion may include a third section and a fourth section other than the third section. The width of the third section may be smaller than the width of the fourth section. When the second strip-shaped portion includes both the third and fourth sections, the morphology of the second strip-shaped portion can also refer to the morphology of the first strip-shaped portion described above, and will not be repeated here.

[0195] For example, as shown in Figures 7 and 8, in the case of a back-contact solar cell, a second doped semiconductor layer 10 is disposed on a local area (e.g., a second region) of the first surface. The second doped semiconductor layer 10 includes a plurality of second strip-shaped portions 23 extending along a second direction and spaced apart along a first direction, with the first strip-shaped portions 13 and 23 alternately spaced along the first direction. In this case, the first doped semiconductor layer 9 and the second doped semiconductor layer 10 on the first surface can be spaced apart, and the region between the first doped semiconductor layer 9 and the second doped semiconductor layer 10 on the first surface is defined as the spacing region 3. Furthermore, the widths of the portions of the second strip-shaped portions along the second direction can be the same; or, as shown in Figures 7 and 8, at least one second strip-shaped portion 23 includes a third partition 24 and a fourth partition 25 other than the third partition 24, and the width w5 of the third partition 24 is less than the width w6 of the fourth partition 25.

[0196] When at least one second strip includes a third section and a fourth section with different widths, one of the two boundaries extending along the second direction of the third section may be substantially aligned with the boundary on the same side of the fourth section, and the other may be recessed along the first direction relative to the edge on the same side of the fourth section. Alternatively, as shown in Figures 7 and 8, each of the two boundaries extending along the second direction of the third section 24 may be recessed along the first direction with the boundary on the same side of the second section 15 (wherein, the recessed distance of each of the two boundaries extending along the second direction of the third section 24 relative to the boundary on the same side of the fourth section 25 along the first direction may be the same or different).

[0197] Furthermore, as shown in Figures 7 and 8, when at least one second strip 23 includes a third partition 24 and a fourth partition 25 with different widths, the third partition 24 included in the at least one second strip 23 can be correspondingly arranged with the first partition 14 included in the adjacent first strip 13. With this arrangement, at least a portion of the narrower third partition 24 in the at least one second strip 23 overlaps with at least a portion of the wider first partition 14 in the adjacent first strip 13 in the second direction. This facilitates the placement of the portion of the first partition 14 protruding relative to the second partition 15 at the portion of the third partition 24 recessed relative to the fourth partition 25, thereby enabling effective utilization of the surface area in the first surface and facilitating timely diversion and collection of charge carriers. Moreover, the corresponding arrangement of the narrower third partition 24 with the wider first partition 14 ensures a certain distance between them, reducing the risk of leakage and making the corresponding patterns of the first strip 13 and the second strip 23 relatively regular, reducing the difficulty of patterning.

[0198] Optionally, as shown in FIG8, the length L8 of the third partition 24 of at least one second strip 23 along the second direction can be greater than or equal to the length L1 of the corresponding first partition 14 in the adjacent first strip 13 along the second direction. In this case, the projection of the first partition 14 in the first strip 13 in the second direction can be located within the projection of the corresponding third partition 24 in the adjacent second strip 23 in the second direction.

[0199] The distribution of the third partition and the corresponding first partition along the first direction can be determined based on the width requirements of the third partition and the first partition in the actual application scenario, as well as the leakage risk requirements between them.

[0200] As shown in Figures 7 and 8, the first partition 14, adjacent to the end of the second partition 15, has a first inflection point 26 protruding outward along a first direction, and the fourth partition 25, adjacent to the end of the third partition 24, has a second inflection point 27 protruding outward along the first direction. The specific positions of the first inflection point 26 and the second inflection point 27 can be determined according to the shapes of the first partition 14 and the fourth partition 25. Taking the first partition 14 as an example, if the first partition 14 is a polygon without rounded corners, then the first inflection point 26 is the outermost endpoint of the outline of the end of the first partition 14 adjacent to the second partition 15 along the first direction. For example, when the first partition 14 is a rectangle-like shape, the first inflection point 26 is the rectangle-like shape near the end of the second partition 15.

[0201] For example, as shown in Figures 7 and 8, the line connecting at least one first inflection point 26 and the adjacent second inflection point 27 can be parallel to the second direction. This arrangement helps to ensure that the portion of the first partition 14 that protrudes relative to the second partition 15 maintains a certain distance from the adjacent third partition 24, reducing the risk of leakage between them.

[0202] For example, as shown in FIG9, at least one first inflection point 26 extending in the second direction may be located on the side of the extension line of the adjacent second inflection point 27 in the second direction closer to the second partition 15. This arrangement helps to increase the distance along the first direction between the end of the first partition 14 adjacent to the second partition 15 and the adjacent third partition 24, which has the opposite conductivity type, thus reducing the risk of leakage between them.

[0203] The widths of the third and fourth sections in the same second strip, and the difference between them, can be set according to the size of the second electrode unit, the relative positional relationship between the third and fourth sections in the second strip and the first and second sections in the first strip, and the width difference between the first and second sections, and are not specifically limited here.

[0204] The differences between the widths of the third and fourth partitions and the first and second partitions can be set according to the dimensions of the first and second electrode units.

[0205] For example, along the first direction, the ratio of the width of the first partition to the width of the third partition can be greater than or equal to 1.2 and less than or equal to 3. For instance, the ratio of the width of the first partition to the width of the third partition can be 1.2, 1.3, 1.5, 1.6, 1.8, 2, 2.2, 2.5, 2.8, or 3, etc. This setting, with the ratio of the widths of the first and third partitions within the aforementioned range, prevents the first partition from being too narrow and / or the third partition from being too wide. While ensuring that the first partition has a large actual carrier collection range along the first direction and reducing the manufacturing difficulty of the first junction on the first partition, it also reduces parasitic absorption in the third partition and reduces the risk of leakage between the first and third partitions due to the larger width of the third partition.

[0206] For example, along the first direction, the ratio of the width of the first partition to the width of the fourth partition can be greater than or equal to 0.6 and less than or equal to 1.8. For instance, the ratio of the width of the first partition to the width of the fourth partition can be 0.6, 0.7, 0.8, 0.9, 1, 1.2, 1.5, or 1.8, etc. This setting prevents the width of the first partition from being too large and / or the width of the third partition from being too small due to an excessively large ratio. The application principle of preventing the width of the first partition from being too large can refer to the application principle of preventing the width of the third partition from being too large, and the application principle of preventing the width of the third partition from being too small can refer to the application principle of preventing the width of the first partition from being too small, which will not be repeated here.

[0207] In terms of morphology, the two side boundaries of the third and / or fourth partitions extending along the second direction can be flat straight lines. Alternatively, as shown in Figures 7, 8 and 10, the two side boundaries of the third partition 24 and / or the fourth partition 25 extending along the second direction are provided with third protruding units 30 that are spaced apart along the second direction and protrude along the first direction.

[0208] The length of the third protruding unit along the second direction, the distance by which the third protruding unit protrudes along the first direction, and the spacing between two adjacent third protruding units along the second direction can be set according to actual needs.

[0209] The dimensions of the third protruding unit (such as the distance of protrusion along the first direction, the length along the second direction, the spacing along the second direction, etc.) can be the same as or different from the dimensions of the first protruding unit. When both sides of the third and fourth partitions extending along the second direction are provided with third protruding units, the dimensions of the third protruding unit corresponding to the third partition can be the same as or different from the dimensions of the third protruding unit corresponding to the fourth partition.

[0210] It should be noted that the lateral boundaries of the third and / or fourth partitions extending along the second direction have an undulating shape along the first direction due to the presence of third protruding units. Therefore, the undulating shape of the lateral boundaries of the third partition extending along the second direction can be determined based on the shape of the third protruding units. For example, the shape of the third protruding unit can be a square, a rectangle, a semicircle, a parallelogram, etc. The lateral boundaries of the third and / or fourth partitions extending along the second direction can be a square wave, a sawtooth shape, or a wavy shape, etc.

[0211] As shown in Figures 7 and 8, the undulations of the two side boundaries of the third partition 24 extending along the second direction can differ from the undulations of the two side boundaries of the first partition 14 extending along the second direction. For example, the undulations of the two side boundaries of the first partition 14 extending along the second direction can be square-shaped, while the undulations of the two side boundaries of the third partition 24 extending along the second direction can be sawtooth-shaped. This configuration allows for precise determination of the polarity and position of the first stripe 13 and the second stripe 23 by observing the difference in their edge morphologies, reducing the difficulty of subsequent operations such as electrode printing.

[0212] Alternatively, the undulating shape of the two sides of the third zone extending along the second direction can be the same as the undulating shape of the two sides of the first zone extending along the second direction.

[0213] As shown in Figures 7 and 8, the undulation morphology of the two side boundaries of the fourth partition 25 extending along the second direction may be different from the undulation morphology of the two side boundaries of the second partition 15 extending along the second direction. Alternatively, the undulation morphologies of the two partitions may be the same.

[0214] For example, as shown in FIG7, the distance w3 by which at least one first protruding unit 19 protrudes along the first direction can be greater than the distance w7 by which at least one third protruding unit 30 protrudes along the first direction. This configuration is beneficial to increasing the actual carrier collection range of the first partition 14 along the first direction and improving the carrier collection capability of the first partition 14. When the distance w7 by which at least one third protruding unit 30 protrudes along the first direction is small, it is beneficial to ensure that the interval region 3 between the first partition 14 and the third partition 24 has a certain width, and the wider interval region 3 has a certain length ratio, which is beneficial to reducing the leakage risk between the first partition 14 and the adjacent third partition 24.

[0215] For example, as shown in FIG8, along the second direction, the length L2 of at least one first protruding unit 19 is greater than the length L6 of at least one third protruding unit 30. The application principle of the beneficial effect in this case can be referred to the application principle of the beneficial effect described above, where the distance w3 of at least one first protruding unit 19 protruding along the first direction is greater than the distance w7 of at least one third protruding unit 30 protruding along the first direction.

[0216] For example, as shown in FIG8, along the second direction, the distance L3 between two adjacent first protruding units 19 is greater than the distance L7 between two adjacent third protruding units 30. This setting can prevent the proportion of the wider portion in the first partition 14 from being too large, which helps to reduce the risk of leakage between the first partition 14 and the adjacent third partition 24.

[0217] It should be noted that the wider fourth section in the second strip may include a third edge and a fourth edge that are oppositely arranged and extend along the second direction. The arrangement of the third and fourth edges can be referenced to the arrangement of the first and second edges. For example, along the second direction, within the same fourth section, the two endpoints of the third edge are offset from the two endpoints of the corresponding fourth edge; and / or, both the third and fourth edges are provided with at least one third protruding unit that is spaced apart along the second direction and protrudes along the first direction, with the third protruding units of the third edge and the third protruding units of the fourth edge offset along the second direction. The application principle of the beneficial effects in this case can be referenced to the application principle of the beneficial effects corresponding to the first and second edges having corresponding technical features as described above.

[0218] Alternatively, the arrangement of the third and fourth edges can differ from that of the first and second edges. For example, along the second direction, within the same fourth partition, the two endpoints of the third edge can be aligned with the two endpoints of the corresponding fourth edge; and / or, both the third and fourth edges are provided with at least one third protruding unit that is spaced apart along the second direction and protrudes along the first direction, with the third protruding units of the third edge and the third protruding units of the fourth edge aligned along the second direction.

[0219] For the spacer region located between the first doped semiconductor layer and the second doped semiconductor layer, the widths of different portions of the spacer region along the extension direction can be the same or different.

[0220] For example, as shown in FIG8, when the length L8 of the third partition 24 is greater than the length L1 of the adjacent first partition 14 along the second direction, the portion of the interval region 3 located between the end of the third partition 24 along the second direction and the end of the adjacent first partition 14 along the second direction is defined as a corner region. The width of the corner region along the first direction can be greater than the width of the rest of the interval region 3 excluding the corner region along the first direction. With this configuration, there are corners at the ends of the first partition 14 adjacent to the second partition 15 and the fourth partition 25 adjacent to the third partition 24, where the electric field is relatively concentrated, resulting in a greater risk of leakage. By making the width of the corner region along the first direction greater than the width of the rest of the interval region 3 excluding the corner region along the first direction, the distance between the ends of the first partition 14 adjacent to the second partition 15 and the ends of the fourth partition 25 adjacent to the third partition 24 can be increased, reducing the carrier recombination rate in the corner region.

[0221] For example, as shown in Figure 7, the width of the interval region 3 between the first partition 14 and the adjacent third partition 24 is s, and the width of the interval region 3 between the second partition 15 and the adjacent fourth partition 25 is r, where 0.5r ≤ s ≤ 2r. For example, s can be equal to 0.5r, 0.6r, 0.8r, r, 1.2r, 1.5r, 1.8r, or 2r. This setting allows the width of the interval region 3 to be set at different locations according to actual needs, which helps to reduce the risk of leakage current.

[0222] Implementation Plan C

[0223] The foregoing descriptions of some features of the solar cell are presented in two sections, Implementation Scheme A and Implementation Scheme B. It should be understood that Implementation Scheme A and Implementation Scheme B can be implemented independently, and some or all features of Implementation Scheme A can be used in combination with some or all features of Implementation Scheme B.

[0224] In embodiment A, the terms "first joint area," "first electrode area," "second joint area," and "second electrode area" are used, while in embodiment B, the terms "first partition," "second partition," "third partition," and "fourth partition" are used. In one embodiment, when the features of embodiment A and embodiment B are used in combination, the first joint area and the first electrode area in embodiment A may correspond to the first partition and the second partition in embodiment B, respectively. It will be understood that when the first joint area and the first electrode area in embodiment A correspond to the first partition and the second partition in embodiment B, respectively, the corresponding third partition in embodiment B may correspond to the first recessed portion in embodiment A. Alternatively, in one embodiment, when the second joint area in embodiment A has a second protrusion, the second joint area and the second electrode area in embodiment A may correspond to the first partition and the second partition in embodiment B, respectively, and the corresponding third partition in embodiment B may correspond to the second recessed portion in embodiment A. In another embodiment, when combining the features of implementation scheme A and implementation scheme B, the width of the strip-shaped doped semiconductor layer can be set according to actual needs. The first bonding portion setting region in implementation scheme A and the first partition in implementation scheme B may not be in a one-to-one correspondence, and / or, the first electrode setting region in implementation scheme A and the second partition in implementation scheme B may not be in a one-to-one correspondence. For example, the first partition may be set outside the first bonding portion setting region, and / or, the second partition may be set outside the first electrode setting region. Alternatively, in another embodiment, when combining the features of implementation scheme A and implementation scheme B, the second bonding portion setting region in implementation scheme A and the first partition in implementation scheme B may not be in a one-to-one correspondence, and / or, the second electrode setting region in implementation scheme A and the second partition in implementation scheme B may not be in a one-to-one correspondence. For example, the first partition may be set outside the second bonding portion setting region, and / or, the second partition may be set outside the second electrode setting region.

[0225] In yet another embodiment, when the features of embodiments A and B are used in combination, the first protrusion of embodiment A may include one or more first protrusion units as described in embodiment B. In still another embodiment, when the features of embodiments A and B are used in combination, one or more second protrusion units as described in embodiment B may also be provided in the first electrode setting area (including the second recessed portion therein) of embodiment A.

[0226] The above are merely some examples of combining features of implementation scheme A and implementation scheme B. It should be understood that those skilled in the art can make various combinations of features of implementation scheme A and implementation scheme B, as long as such combinations are technically feasible.

[0227] Implementation Plan D

[0228] The foregoing descriptions of some features of the solar cell in sections A and B respectively should be understood. Other features can also be combined with one or both of sections A and B. Other features can also be combined with section C, which is a combination of sections A and B. For example, in sections A-C, the interconnects can be at an angle to the grid electrodes, optionally 90 degrees.

[0229] Although the present application is defined in the claims, it should be understood that the first aspect of the present application may be defined alternatively according to the following embodiments:

[0230] Example 1. A solar cell, comprising:

[0231] A semiconductor substrate, the semiconductor substrate including opposing first and second surfaces;

[0232] A first doped semiconductor layer is disposed on a local area of ​​the first surface; the first doped semiconductor layer includes a plurality of first strip-shaped portions extending along a second direction and spaced apart along a first direction; the second direction intersects the first direction; along the second direction, the first strip-shaped portions include a first partition and a second partition, the width of the first partition being greater than the width of the second partition;

[0233] The first electrode unit is disposed on the side of the first doped semiconductor layer away from the semiconductor substrate;

[0234] The first partition includes a first edge and a second edge that are disposed opposite to each other and extend along the second direction;

[0235] Along the second direction, within the same first partition, the two endpoints of the first edge are respectively offset from the two endpoints of the corresponding second edge; and / or, both the first edge and the second edge are provided with at least one first protruding unit that is spaced apart along the second direction and protrudes along the first direction, and the first protruding unit of the first edge and the first protruding unit of the second edge are offset along the second direction.

[0236] Example 2. The solar cell according to Example 1, wherein the first electrode unit includes a plurality of first bonding portions and a plurality of first current collecting electrodes; the first bonding portions are disposed on the first partition; the first current collecting electrodes are disposed on the second partition and are electrically connected to the first bonding portions;

[0237] Along the first direction, the width of the first joint is greater than the width of the first current collector electrode.

[0238] Example 3. The solar cell according to Example 1, wherein, along the second direction, the ratio of the length of at least one of the first protruding units to the length of the first partition is greater than or equal to one-fiftieth and less than or equal to one-half; and / or,

[0239] Along the second direction, the ratio of the spacing between two adjacent first protruding units to the length of the first partition is greater than or equal to one-fiftieth and less than or equal to three-quarters; and / or,

[0240] The ratio of the width of the first partition along the first direction to the distance by which at least one of the first protruding units protrudes along the first direction is greater than or equal to 2 and less than or equal to 1000; and / or,

[0241] The ratio of the width of the first partition to the width of the second partition is greater than or equal to 1.2 and less than or equal to 3.

[0242] Example 4. The solar cell according to Example 1, wherein, along the second direction, the ratio of the length of the first partition to the distance offset between at least one endpoint of the first edge and the corresponding endpoint of the second edge is greater than 0 and less than or equal to 14.5.

[0243] Example 5. The solar cell according to Example 1, wherein the length of at least one of the first protruding units located on the outer side of the first edge along the first direction along the second direction is less than the length of the remaining first protruding units along the second direction; and / or,

[0244] The first edge has a greater number of first protruding units than the second edge has; and / or,

[0245] The length of at least one of the first protruding units on the first edge along the second direction is different from the length of the first protruding unit on the second edge along the second direction; and / or,

[0246] The distance by which at least one of the first protruding units of the first edge protrudes along the first direction is different from the distance by which the first protruding unit of the second edge protrudes along the first direction.

[0247] Example 6. The solar cell according to Example 1, wherein the solar cell further includes a second doped semiconductor layer; the second doped semiconductor layer is disposed on a local area of ​​the first surface, and the conductivity type of the second doped semiconductor layer is opposite to that of the first doped semiconductor layer;

[0248] The second doped semiconductor layer includes a plurality of second stripes extending along the second direction and spaced apart along the first direction, wherein the first stripes and the second stripes are alternately spaced apart along the first direction.

[0249] Example 7. The solar cell according to Example 6, wherein at least one of the second strip portions includes a third section and a fourth section; the width of the third section is smaller than the width of the fourth section;

[0250] At least one of the third partitions included in the second stripe portion is configured correspondingly to the first partitions included in the adjacent first stripe portion.

[0251] Example 8. The solar cell according to Example 7, wherein the first partition has a first inflection point protruding outward along the first direction at the end immediately adjacent to the second partition, and the fourth partition has a second inflection point protruding outward along the first direction at the end immediately adjacent to the third partition; and wherein:

[0252] At least one of the first inflection points and the line connecting the adjacent second inflection point is parallel to the second direction; or, at least one extension of the first inflection point in the second direction is located on the side of the extension of the adjacent second inflection point in the second direction closer to the second partition.

[0253] Example 9. The solar cell according to Example 7, wherein the region on the first surface located between the first doped semiconductor layer and the second doped semiconductor layer is a spacer region;

[0254] Wherein, along the second direction, the length of the third partition is greater than the length of the adjacent first partition, and the portion of the interval region located between the end of the third partition along the second direction and the end of the adjacent first partition along the second direction is a corner region; and wherein:

[0255] The width of the corner area along the first direction is greater than the width of the remaining portion of the interval area excluding the corner area along the first direction; and / or, the width of the interval area between the first partition and the adjacent third partition is s, and the width of the interval area between the second partition and the adjacent fourth partition is r, 0.5r≤s≤2r.

[0256] Example 10. According to the solar cell of Example 7, wherein each of the two side boundaries extending along the second direction in the second partition is provided with a plurality of second protruding units spaced apart along the second direction and protruding along the first direction; wherein the distance by which at least one first protruding unit protrudes along the first direction is greater than or equal to the distance by which at least one second protruding unit protrudes along the first direction; and / or, along the second direction, the spacing between two adjacent first protruding units is less than the spacing between two adjacent second protruding units; and / or,

[0257] The third partition and / or the fourth partition are provided with third protruding units that are spaced apart along the second direction and protrude along the first direction on both sides of their side boundaries; wherein, at least one first protruding unit protrudes a greater distance along the first direction than at least one third protruding unit; and / or, along the second direction, the length of at least one first protruding unit is greater than the length of at least one third protruding unit; and / or, along the second direction, the spacing between two adjacent first protruding units is greater than the spacing between two adjacent third protruding units; and / or, the undulation morphology of the side boundaries of the third partition extending along the second direction is different from the undulation morphology of the side boundaries of the first partition extending along the second direction; and / or, the undulation morphology of the side boundaries of the fourth partition extending along the second direction is different from the undulation morphology of the side boundaries of the second partition extending along the second direction.

[0258] Example 11. The solar cell according to Example 7, wherein, along the first direction, the ratio of the width of the first partition to the width of the third partition is greater than or equal to 1.2 and less than or equal to 3; and / or,

[0259] In the first direction, the ratio of the width of the first partition to the width of the fourth partition is greater than or equal to 0.6 and less than or equal to 1.8.

[0260] Example 12. The solar cell according to Example 1, wherein the angle β between one end boundary of at least one of the first protruding units along the second direction and the second direction is greater than or equal to 60° and less than or equal to 150°.

[0261] Secondly, embodiments of this application also provide a photovoltaic module, which includes a battery string, an interconnecting element, and an encapsulation layer; wherein, the battery string is formed by electrically connecting a plurality of solar cells provided in the first aspect and its various implementations; the interconnecting element is electrically connected to the junction of the solar cells provided in the first aspect and its various implementations, the junction being a first junction and a second junction, for current collection and assisting the solar cells in forming the battery string; the encapsulation layer is used to cover the surface of the battery string.

[0262] The beneficial effects of the photovoltaic modules in the embodiments of this application can be found in the analysis of the beneficial effects in the first aspect and its various implementations, which will not be repeated here.

[0263] In the description of the above embodiments, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0264] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A solar cell, comprising a substrate, wherein at least one side of the substrate includes a first region, a second region, and a spacer region, the first region and the second region being alternately arranged, and the first region being separated from an adjacent second region by the spacer region; in, The first region includes a first electrode setting area and a first junction setting area connected together. The first electrode setting area is used to correspondingly set a first gate line electrode, and the first junction setting area is used to correspondingly set a first junction that is electrically connected to the first gate line electrode. In the alternating arrangement direction of the first region and the second region, at least one side of the first joint setting region protrudes toward the adjacent spacing region relative to the same side edge of the first electrode setting region, forming a first protruding portion.

2. The solar cell according to claim 1, wherein, In the alternating arrangement direction of the first region and the second region, the opposite sides of the first joint setting area protrude toward the adjacent interval area relative to the corresponding side of the first electrode setting area, forming the first protruding portion.

3. The solar cell according to claim 1, wherein, The second region includes a connected second electrode setting area and a second bonding portion setting area. The second electrode setting area is used to correspondingly set a second gate line electrode, and the second bonding portion setting area is used to correspondingly set a second bonding portion connected to the second gate electrode; and wherein: In the alternating arrangement direction of the first region and the second region, the widths of the second electrode setting area and the second joint setting area in the same second region are equal; and / or, the distance between the first electrode setting area and the adjacent second electrode setting area is greater than the distance between the first protruding part of the first joint setting area and the adjacent second electrode setting area.

4. The solar cell according to claim 1, wherein, The second region includes a second electrode setting area and a second joint setting area connected together. The second electrode setting area is used to correspondingly set the second gate line electrode, and the second joint setting area is used to correspondingly set the second joint connected to the second gate line electrode. In the alternating arrangement direction of the first region and the second region, a portion of at least one side of the second electrode setting region is recessed relative to the remaining portion of the at least one side of the second electrode setting region away from the adjacent interval region, forming a first recessed portion.

5. The solar cell according to claim 4, wherein, The first recessed portion corresponds in position and matches the shape of the first protruding portion, and the first protruding portion and the first recessed portion are separated by the interval region; and / or In the alternating arrangement direction of the first region and the second region, the distance between the first electrode setting area and the adjacent second electrode setting area is greater than or equal to the distance between the first protruding part of the first joint setting area and the adjacent second electrode setting area.

6. The solar cell according to claim 1, wherein, The second region includes a second electrode setting area and a second joint setting area connected together. The second electrode setting area is used to correspondingly set the second gate line electrode, and the second joint setting area is used to correspondingly set the second joint connected to the second gate line electrode. In the alternating arrangement direction of the first region and the second region, at least one side of the second joint setting region protrudes toward the adjacent interval region relative to the same side edge of the second electrode setting region, forming a second protruding portion.

7. The solar cell according to claim 6, wherein, In a direction perpendicular to the alternating arrangement direction of the first region and the second region, the first protruding portion and the adjacent second protruding portion are staggered and separated by the interval region.

8. The solar cell according to claim 7, wherein, The projections of the first protruding portion and the adjacent second protruding portion on a straight line parallel to the alternating arrangement direction of the first region and the second region overlap.

9. The solar cell according to claim 6, wherein, In the alternating arrangement direction of the first region and the second region, a portion of at least one side of the first electrode setting region is recessed relative to the remaining portion of the at least one side of the first electrode setting region, away from the adjacent interval region, forming a second recessed portion.

10. The solar cell according to claim 9, wherein, The second recessed portion corresponds to the second protruding portion in position and matches in shape, and the second protruding portion and the second recessed portion are separated by the interval region.

11. The solar cell according to any one of claims 6-10, wherein, In the alternating arrangement direction of the first region and the second region, the protrusion width of the first protruding portion relative to the same side of the first electrode setting region connected to the first joint setting region is 40μm to 80μm; and / or, The second protruding portion has a protrusion width of 40μm to 80μm relative to the second electrode setting area connected to the second joint setting area where it is located.

12. The solar cell according to any one of claims 1-10, wherein, The solar cell further includes the first grid electrode and the first junction portion; and wherein: In the alternating arrangement direction of the first region and the second region, the ratio of the width of the first joint to the width of the first electrode setting area is 0.35 to 1.4; and / or, the ratio of the width of the first gate electrode to the width of the first electrode setting area is 0.015 to 0.

3.

13. The solar cell according to any one of claims 1-10, wherein, The solar cell further includes a second grid electrode and a second junction; and wherein: In the alternating arrangement direction of the first region and the second region, the ratio of the width of the second joint to the width of the second electrode setting area is 0.2 to 0.7; and / or, the ratio of the width of the second gate electrode to the width of the second electrode setting area is 0.012 to 0.

12.

14. The solar cell according to claim 1, wherein, The substrate is a semiconductor substrate, the semiconductor substrate including a first surface and a second surface opposite to each other; the at least one surface includes the first surface, and the solar cell further includes: A first doped semiconductor layer is disposed on the first region of the first surface; the first doped semiconductor layer includes a plurality of first strip-shaped portions that are spaced apart along a first direction and extend along a second direction; the first direction and the second direction intersect, and the alternating arrangement direction of the first region and the second region is the same as the first direction; along the second direction, the first strip-shaped portion includes a first partition and a second partition, and the width of the first partition is greater than the width of the second partition. The first electrode unit is disposed on the side of the first doped semiconductor layer away from the semiconductor substrate; The first partition includes a first edge and a second edge that are disposed opposite to each other and extend along the second direction; Along the second direction, within the same first partition, the two endpoints of the first edge are respectively offset from the two endpoints of the corresponding second edge; and / or, both the first edge and the second edge are provided with at least one first protruding unit that is spaced apart along the second direction and protrudes along the first direction, the first protruding unit of the first edge and the first protruding unit of the second edge are offset along the second direction, and the first protruding portion includes the first protruding unit.

15. The solar cell according to claim 14, wherein, The first electrode unit includes a plurality of first bonding portions and a plurality of first gate line electrodes; the first bonding portions are disposed on the first partition; the first gate line electrodes are disposed on the second partition and are electrically connected to the first bonding portions; the first partition corresponds to the first bonding portion disposal area, and the second partition corresponds to the first electrode disposal area; Along the first direction, the width of the first junction is greater than the width of the first gate electrode.

16. The solar cell according to claim 14, wherein, Along the second direction, the ratio of the length of at least one of the first protruding units to the length of the first partition is greater than or equal to one-fiftieth and less than or equal to one-half; And / or, along the second direction, the ratio of the spacing between two adjacent first protruding units to the length of the first partition is greater than or equal to one-fiftieth and less than or equal to three-quarters; and / or, The ratio of the width of the first partition along the first direction to the distance by which at least one of the first protruding units protrudes along the first direction is greater than or equal to 2 and less than or equal to 1000; and / or, Along the first direction, the ratio of the width of the first partition to the width of the second partition is greater than or equal to 1.2 and less than or equal to 3.

17. The solar cell according to claim 14, wherein, Along the second direction, the ratio of the length of the first partition to the distance offset between at least one endpoint of the first edge and the corresponding endpoint of the second edge is greater than 0 and less than or equal to 14.

5.

18. The solar cell according to claim 14, wherein, The length of at least one of the first protruding units located on the outer side of the first edge along the first direction along the second direction is less than the length of the remaining first protruding units along the second direction; and / or, The first edge has a greater number of first protruding units than the second edge has; and / or, Along the second direction, the length of at least one of the first protruding units on the first edge is different from the length of the first protruding units on the second edge; and / or, The distance by which at least one of the first protruding units of the first edge protrudes along the first direction is different from the distance by which the first protruding unit of the second edge protrudes along the first direction.

19. The solar cell according to claim 14, wherein, The solar cell further includes a second doped semiconductor layer; the second doped semiconductor layer is disposed on the second region of the first surface, and the conductivity type of the second doped semiconductor layer is opposite to that of the first doped semiconductor layer; The second doped semiconductor layer includes a plurality of second stripes spaced apart along the first direction and extending along the second direction, wherein the first stripes and the second stripes are alternately spaced apart along the first direction.

20. The solar cell according to claim 19, wherein, At least one of the second strip-shaped portions includes a third section and a fourth section; the width of the third section is smaller than the width of the fourth section; At least one of the third partitions included in the second stripe portion is configured correspondingly to the first partitions included in the adjacent first stripe portion.

21. The solar cell according to claim 20, wherein, The first partition has a first inflection point protruding outward along the first direction at its end immediately adjacent to the second partition, and the fourth partition has a second inflection point protruding outward along the first direction at its end immediately adjacent to the third partition; and wherein: The line connecting at least one first inflection point and an adjacent second inflection point is parallel to the second direction; or, the extension of at least one first inflection point in the second direction is located on the side of the extension of the adjacent second inflection point in the second direction closer to the second partition.

22. The solar cell according to claim 20, wherein, The region located between the first doped semiconductor layer and the second doped semiconductor layer in the first surface is the spacing region; Wherein, along the second direction, the length of the third partition is greater than the length of the adjacent first partition, and the portion of the interval region located between the end of the third partition along the second direction and the end of the adjacent first partition along the second direction is a corner region; and wherein: The width of the corner area along the first direction is greater than the width of the remaining portion of the interval area excluding the corner area along the first direction; and / or, the width of the interval area between the first partition and the adjacent third partition is s, and the width of the interval area between the second partition and the adjacent fourth partition is r, 0.5r≤s≤2r.

23. The solar cell according to claim 20, wherein, The second partition has multiple second protruding units distributed at intervals along the second direction and protruding along the first direction on both sides of its two-sided boundary; wherein, at least one first protruding unit protrudes a distance greater than or equal to at least one second protruding unit protrudes a distance along the first direction; and / or, along the second direction, the distance between two adjacent first protruding units is less than the distance between two adjacent second protruding units; and / or, The third partition and / or the fourth partition are provided with third protruding units that are spaced apart along the second direction and protrude along the first direction on both sides of their side boundaries; wherein, at least one first protruding unit protrudes a greater distance along the first direction than at least one third protruding unit; and / or, along the second direction, the length of at least one first protruding unit is greater than the length of at least one third protruding unit; and / or, along the second direction, the spacing between two adjacent first protruding units is greater than the spacing between two adjacent third protruding units; and / or, the undulation morphology of the side boundaries of the third partition extending along the second direction is different from the undulation morphology of the side boundaries of the first partition extending along the second direction; and / or, the undulation morphology of the side boundaries of the fourth partition extending along the second direction is different from the undulation morphology of the side boundaries of the second partition extending along the second direction.

24. The solar cell according to claim 20, wherein, Along the first direction, the ratio of the width of the first partition to the width of the third partition is greater than or equal to 1.2 and less than or equal to 3; and / or, In the first direction, the ratio of the width of the first partition to the width of the fourth partition is greater than or equal to 0.6 and less than or equal to 1.

8.

25. The solar cell according to claim 14, wherein, At least one of the first protruding units has an angle β between its end boundary along the second direction and the second direction that is greater than or equal to 60° and less than or equal to 150°.

26. A photovoltaic module, comprising: A battery string, wherein the battery string is formed by electrically connecting a plurality of solar cells as described in any one of claims 1 to 25; Interconnectors, which are electrically connected to the junction of the solar cell; and An encapsulation layer that covers the surface of the battery string.

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