Admittance testing method for resonator and resonator

Abstract

The present invention provides an admittance testing method for a resonator and a resonator. The testing method comprises the following steps: acquiring a scattering parameter matrix file of a resonator to be tested; constructing an equivalent circuit of a real resonator on the basis of the scattering parameter matrix file, the real resonator having parasitic effects incorporated therein; deriving equations of scattering parameters of the real resonator on the basis of the equivalent circuit; and calculating admittance parameters of the real resonator by means of the equations, for designing the real resonator. In the present invention, the admittance testing method for the resonator has low costs, and is capable of acquiring more accurate admittance parameters.

Description

Resonator admittance testing methods and resonators Technical Field

[0001] This invention relates to the field of surface acoustic wave (SAW) device technology, and in particular to a method for testing the admittance of a resonator and a resonator thereof. Background Technology

[0002] Surface acoustic wave devices have advantages such as small size, low noise, low loss, high performance, good stability and compatible manufacturing processes, and are now widely used in fields such as medicine, telemetry technology and communications.

[0003] Surface acoustic wave (SAW) devices are mainly composed of piezoelectric substrates and metal structures. With the development of radio frequency (RF) technology, SAW filters are continuously evolving towards higher quality factors, higher electromechanical coupling coefficients, and higher frequency capabilities. In product development, high-quality iteration not only gains a competitive edge but also reduces costs, and improving the accuracy of test data is a crucial way to achieve high-quality iteration.

[0004] Data testing of surface acoustic wave devices mainly relies on probe testing. However, the probe test admittance contains parasitic effects caused by the toroidal metal structure, which can lead to differences between the test admittance and the actual device admittance.

[0005] As a type of surface acoustic wave device, the existing technology for admittance testing of resonators requires the design of de-embedding structures for resonators with different structures and fabrication along with the resonator, which leads to high costs for this testing method. Summary of the Invention

[0006] To address the shortcomings of the existing technologies, this invention proposes a method for testing the admittance of a resonator and a resonator in order to solve the problem of high cost in the existing methods of testing the admittance of resonators using probes.

[0007] To solve the above-mentioned technical problems, the present invention adopts the following technical solution:

[0008] In a first aspect, the present invention provides a method for testing the admittance of a resonator, which includes the following steps:

[0009] Obtain the scattering parameter matrix file of the resonator under test;

[0010] The schematic circuit of the real resonator is constructed based on the scattering parameter matrix file; the real resonator is supplemented with parasitic effects;

[0011] Based on the aforementioned principle circuit, the equations for the scattering parameters of the actual resonator are derived.

[0012] The admittance parameters of the real resonator are calculated using the equations, which can then be used to design the real resonator.

[0013] Preferably, obtaining the scattering parameter matrix file of the resonator under test includes the following sub-steps:

[0014] An electromagnetic simulation model of the resonator under test is established based on the layout of the real resonator; the resonator under test includes a busbar that generates parasitic effects, a ground port, an input port, an output port, and a simulation port;

[0015] The electromagnetic simulation model is swept according to the operating frequency band of the real resonator to obtain the scattering parameter matrix file; the scattering parameter matrix file is a *.s3p file of the input port, output port and simulation port of the resonator under test, and the *.s3p file includes scattering parameters at different frequencies.

[0016] Preferably, constructing a schematic circuit containing a real resonator based on the scattering parameter matrix file includes the following sub-steps:

[0017] The real resonator is placed at the simulation port of the resonator under test;

[0018] The schematic circuit is constructed based on the *.s3p file, the input port of the real resonator, and the output port of the real resonator.

[0019] Preferably, the step of deriving the equation for the scattering parameters of the real resonator based on the principle circuit is as follows: the equation is derived based on the parasitic effect of the real resonator and the relationship between the input and output of the principle circuit.

[0020] Preferably, calculating the admittance parameters of the actual resonator using the equation includes the following sub-steps:

[0021] The formula for calculating the scattering parameters of the real resonator is derived from the above equation;

[0022] The scattering parameters of the actual resonator are calculated according to the aforementioned calculation formula;

[0023] The scattering parameters of the real resonator are converted into the admittance parameters of the real resonator.

[0024] Preferably, after calculating the admittance parameters of the real resonator using the equation, the method further includes the following step: programming the calculation formula to obtain a calculation program.

[0025] Preferably, calculating the admittance parameters of the actual resonator using the equation includes the following sub-steps:

[0026] The scattering parameters of the real resonator are obtained by solving the equation using numerical methods.

[0027] The scattering parameters of the real resonator are converted into the admittance parameters of the real resonator.

[0028] Preferably, after calculating the admittance parameters of the real resonator using the equation, the method further includes the following step: programming the numerical method to obtain a calculation program.

[0029] Secondly, the present invention provides a resonator whose admittance parameters are obtained according to the admittance testing method of the resonator described above.

[0030] Compared with existing technologies, the resonator admittance testing method of the present invention sequentially obtains the scattering parameter matrix file of the resonator under test, constructs the schematic circuit of the real resonator based on the scattering parameter matrix file, derives the equation of the scattering parameters of the real resonator based on the schematic circuit, and calculates the admittance parameters of the real resonator using the equation, which is then used for resonator design. This testing method has lower costs because it does not require designing de-embedding structures and fabrication. In addition, this testing method uses simulation technology to simulate the additional metal structure other than the resonator and uses mathematical methods to remove the parasitic effects generated by the additional metal structure, thereby obtaining more accurate admittance parameters. Attached Figure Description

[0031] The present invention will now be described in detail with reference to the accompanying drawings. The above and other aspects of the present invention will become clearer and more readily understood through the detailed description following the accompanying drawings. In the drawings:

[0032] Figure 1 is a flowchart of the steps of the resonator admittance testing method provided in an embodiment of the present invention;

[0033] Figure 2 is a layout of the resonator under test provided in an embodiment of the present invention;

[0034] Figure 3 is a schematic diagram of the principle circuit of the parasitic effect of the real resonator provided in the embodiment of the present invention;

[0035] Figure 4 is a schematic diagram comparing the admittance parameters of the resonator under test before and after removing parasitic effects, provided in an embodiment of the present invention. Detailed Implementation

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein in the specification of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "comprising" and "having," and any variations thereof, in the specification, claims, and foregoing drawings of this application, are intended to cover non-exclusive inclusion. The terms "first," "second," etc., in the specification, claims, or foregoing drawings of this application are used to distinguish different objects, not to describe a particular order.

[0037] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0038] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0039] Example 1

[0040] This invention provides a method for testing the admittance of a resonator, as shown in Figure 1, which includes the following steps:

[0041] S1. Obtain the scattering parameter matrix file of the resonator to be tested.

[0042] Obtaining the scattering parameter matrix file of the resonator under test includes the following sub-steps:

[0043] S11. Establish an electromagnetic simulation model of the resonator to be tested based on the layout of the real resonator.

[0044] As shown in Figure 2, the layout of the resonator under test includes a busbar 1 (metal layer) that generates parasitic effects, a ground port 2, an input port 3, an output port 4, and a simulation port 5.

[0045] S12. The electromagnetic simulation model is swept according to the operating frequency band of the real resonator to obtain the scattering parameter matrix file.

[0046] The scattering parameter matrix file is a *.s3p file containing the input port, output port, and simulation port of the resonator under test (data obtained from the simulation results). The *.s3p file includes scattering parameters (S-parameters) at different frequencies.

[0047] It operates in multiple frequency bands, with 0-5GHz being one of them.

[0048] S2. Construct the principle circuit of the real resonator based on the scattering parameter matrix file.

[0049] The real resonator is supplemented with the parasitic effects of the resonator under test.

[0050] Constructing a schematic circuit containing a real resonator based on the scattering parameter matrix file includes the following sub-steps:

[0051] S21. Place the real resonator at the simulation port of the resonator under test.

[0052] After the real resonator is placed at the simulation port of the resonator under test, that is, the input port of the real resonator is connected to the simulation port of the resonator under test, and the output port of the real resonator is grounded, which is equivalent to the real resonator not including busbars, grounding ports, input ports, output ports and simulation ports.

[0053] S22. Construct the schematic circuit based on the *.s3p file, the input port of the real resonator, and the output port of the real resonator.

[0054] S3. Based on the aforementioned principle circuit, derive the equations for the scattering parameters of the actual resonator.

[0055] Specifically, the step of deriving the equation for the scattering parameters of the real resonator based on the principle circuit is as follows: the equation is derived based on the parasitic effect of the real resonator and the relationship between the input and output of the principle circuit.

[0056] The parasitic effect of a real resonator is the same as the parasitic effect of the resonator under test, which is equivalent to the scattering parameters of the resonator under test.

[0057] S4. The admittance parameters of the real resonator are calculated using the equation.

[0058] Once the admittance parameters of the real resonator are obtained, they can be used to design the real resonator.

[0059] The calculation of the admittance parameters of the actual resonator using the aforementioned equations includes the following sub-steps:

[0060] S41. The formula for calculating the scattering parameters of the real resonator is derived from the equation.

[0061] The calculation formula is also called the analytical solution.

[0062] S42. The scattering parameters of the actual resonator are calculated according to the calculation formula.

[0063] S43. Convert the scattering parameters of the real resonator into the admittance parameters of the real resonator.

[0064] When converting the scattering parameters of the real resonator into the admittance parameters of the real resonator, the conversion can be performed using an open-source package, because the scattering parameters and admittance parameters of the real resonator are interchangeable.

[0065] After calculating the admittance parameters of the actual resonator using the aforementioned equations, the following steps are also included: programming the calculation formula to obtain a calculation program. Once the calculation program is obtained, it can be conveniently used directly to obtain the admittance parameters of the actual resonator during subsequent design.

[0066] Another method for calculating the admittance parameters of the real resonator using the aforementioned equations includes the following sub-steps:

[0067] S411. Solve the equation using numerical methods to obtain the scattering parameters of the real resonator.

[0068] S412. Convert the scattering parameters of the real resonator into the admittance parameters of the real resonator.

[0069] Accordingly, after calculating the admittance parameters of the real resonator using the equation, the following steps are also included: programming the calculation formula to obtain a calculation program.

[0070] The principle circuit of the real resonator with added parasitic effects in this embodiment is shown in Figure 3, including the input port 3 and output port 4 of the resonator under test, the battery simulation model 8, and the real resonator 9. Based on the principle circuit and scattering parameters, the equations for the scattering parameters of the real resonator can be derived as follows:

[0071] Where A11, A12, A21, and A22 are the scattering parameters of the resonator to be tested, sij (i = 1, 2, 3, j = 1, 2, 3) is the scattering parameter matrix file after electromagnetic simulation, and s44, s45, s54, and s55 are the scattering parameters of the real resonator or the ideal resonator.

[0072] Numerical methods were used to solve for s44, s45, s54, and s55, and the results were converted into admittance parameters, as shown in Figure 4.

[0073] Compared with existing technologies, the resonator admittance testing method in this embodiment sequentially obtains the scattering parameter matrix file of the resonator under test, constructs the schematic circuit of the real resonator based on the scattering parameter matrix file, derives the equation of the scattering parameters of the real resonator based on the schematic circuit, and calculates the admittance parameters of the real resonator using the equation. This testing method has lower cost because it does not require designing a de-embedding structure and fabricating the chip. In addition, this testing method uses simulation technology to simulate the additional metal structure other than the resonator and uses mathematical methods to remove the parasitic effects generated by the additional metal structure, thereby obtaining more accurate admittance parameters.

[0074] Example 2

[0075] This embodiment provides a resonator, the admittance parameters of which are obtained according to the admittance testing method of the resonator in Embodiment 1 above.

[0076] Since the admittance parameters of the resonator in this embodiment are obtained according to the admittance testing method of the resonator in Embodiment 1 above, it can also achieve the technical effect achieved by the admittance testing method of the resonator in Embodiment 1 above, and will not be described in detail here.

[0077] It should be noted that the various embodiments described above with reference to the accompanying drawings are merely illustrative of the present invention and not intended to limit its scope. Those skilled in the art should understand that any modifications or equivalent substitutions made to the present invention without departing from its spirit and scope should be included within the scope of the present invention. Furthermore, unless the context otherwise requires, words appearing in the singular include those in the plural, and vice versa. Additionally, unless specifically stated otherwise, all or part of any embodiment may be used in conjunction with all or part of any other embodiment.

Claims

1. A method for testing the admittance of a resonator, characterized in that, The method for testing the admittance of the resonator includes the following steps: Obtain the scattering parameter matrix file of the resonator under test; The schematic circuit of the real resonator is constructed based on the scattering parameter matrix file; the real resonator is supplemented with parasitic effects; Based on the aforementioned principle circuit, the equations for the scattering parameters of the actual resonator are derived. The admittance parameters of the real resonator are calculated using the equations, which can then be used to design the real resonator.

2. The method for testing the admittance of a resonator as described in claim 1, characterized in that, Obtaining the scattering parameter matrix file of the resonator under test includes the following sub-steps: An electromagnetic simulation model of the resonator under test is established based on the layout of the real resonator; the resonator under test includes a busbar that generates parasitic effects, a ground port, an input port, an output port, and a simulation port; The scattering parameter matrix file is obtained by sweeping the frequency of the electromagnetic simulation model according to the operating frequency band of the real resonator. The scattering parameter matrix file is a *.s3p file containing the input port, output port, and simulation port of the resonator under test. The *.s3p file includes scattering parameters at different frequencies.

3. The method for testing the admittance of a resonator as described in claim 2, characterized in that, Constructing a schematic circuit containing a real resonator based on the scattering parameter matrix file includes the following sub-steps: The real resonator is placed at the simulation port of the resonator under test; The schematic circuit is constructed based on the *.s3p file, the input port of the real resonator, and the output port of the real resonator.

4. The method for testing the admittance of a resonator as described in claim 1, characterized in that, The specific steps for deriving the equations for the scattering parameters of the real resonator based on the principle circuit are as follows: derive the equations based on the parasitic effects of the real resonator and the relationship between the input and output of the principle circuit.

5. The method for testing the admittance of a resonator as described in claim 1, characterized in that, The calculation of the admittance parameters of the actual resonator using the aforementioned equations includes the following sub-steps: The formula for calculating the scattering parameters of the real resonator is derived from the above equation; The scattering parameters of the actual resonator are calculated according to the aforementioned calculation formula; The scattering parameters of the real resonator are converted into the admittance parameters of the real resonator.

6. The method for testing the admittance of a resonator as described in claim 5, characterized in that, After calculating the admittance parameters of the actual resonator using the aforementioned equations, the following steps are also included: The calculation formula is programmed to obtain a calculation program.

7. The method for testing the admittance of a resonator as described in claim 1, characterized in that, The calculation of the admittance parameters of the real resonator using the equations includes the following sub-steps: The scattering parameters of the real resonator are obtained by solving the equation using numerical methods. The scattering parameters of the real resonator are converted into the admittance parameters of the real resonator.

8. The method for testing the admittance of a resonator as described in claim 7, characterized in that, The admittance parameters of the real resonator are calculated using the equations, and the calculation also includes the following steps: programming the numerical method to obtain a calculation program.

9. A resonator, characterized in that, The admittance parameters of the resonator are obtained according to the admittance test method of the resonator as described in any one of claims 1 to 8.

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