Electronic instrument

Abstract

Provided is a miniaturized optical device or electronic instrument. One embodiment of the present invention is an electronic instrument that comprises a display device and an optical system and is worn in front of the eyes of a user, wherein the display device has a pixel unit and a light-receiving region on the same substrate, the pixel unit has a plurality of light-emitting elements each having a light-emitting layer between a first electrode and a second electrode, the light-receiving region has a light-receiving element, the light-receiving element has an electron transport layer on a third electrode, an active layer on the electron transport layer, a hole transport layer on the active layer, a compound layer on the hole transport layer, a fourth electrode on the compound layer, and a protective layer on the second electrode and the fourth electrode, the protective layer is a transparent conductive film formed by a sputtering method, and the active layer receives infrared light that has passed through the protective layer, the fourth electrode, and the compound layer.

Description

electronic equipment

[0001] One aspect of the present invention relates to organometallic complexes, organic compounds, light-emitting elements, photodetectors, light-receiving and light-emitting elements, light-emitting devices, light-receiving and light-emitting devices, display devices, electronic devices, lighting devices, and electronic devices. However, one aspect of the present invention is not limited to the above-mentioned technical fields. One aspect of the present invention disclosed herein relates to a product, a method, or a method of manufacture. Alternatively, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. More specifically, one example of a technical field of one aspect of the present invention disclosed herein is a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a memory device, an imaging device, a method for driving them, or a method for manufacturing them.

[0002] In recent years, electronic devices for virtual reality (VR) or augmented reality (AR) have attracted attention. Furthermore, electronic devices for VR or AR equipped with eye-tracking capabilities are being developed. Electronic devices for VR or AR with eye-tracking capabilities can be applied to, for example, consumer behavior analysis, image processing, avatar creation, or eye-based manipulation.

[0003] For example, Patent Document 1 discloses an electronic device for VR or AR that has an eye-tracking function.

[0004] International Publication No. 2019 / 158709

[0005] Electronic devices for VR or AR equipped with eye-tracking capabilities require an imaging system (e.g., an image sensor or control IC) in addition to a display system (e.g., a display or driver). Furthermore, the optical system must be appropriately adjusted to match the positional relationship between the user's eyes, the display system, and the imaging system.

[0006] In particular, the placement of sensors for sensing the user's eyes is a problem. Considering the need to reduce the number of parts, it is desirable to form an infrared light sensor near the display unit. By providing an infrared light sensor and detecting the user's eyeball or eyelid, the number of blinks can be detected and the degree of eye fatigue can be measured. In this specification, the detection of the number of blinks of the user is also considered one of the gaze detection functions.

[0007] One aspect of the present invention aims to provide a miniaturized optical device or electronic device. Alternatively, one aspect of the present invention aims to provide a miniaturized optical device or electronic device equipped with a gaze detection function. Alternatively, one aspect of the present invention aims to provide a novel optical device or electronic device. Alternatively, one aspect of the present invention aims to provide a novel optical device or electronic device equipped with a gaze detection function.

[0008] The description of these problems does not preclude the existence of other problems. Furthermore, one aspect of the present invention does not need to solve all of these problems. Other problems can be extracted from this specification, drawings, or claims.

[0009] One aspect of the present invention is an electronic device that is mounted in front of the user's eyes and comprises a display device and an optical system, wherein the display device has a pixel section and a light-receiving area on the same substrate, the pixel section has a plurality of light-emitting elements having a light-emitting layer between a first electrode and a second electrode, the light-receiving area has a light-receiving element, the light-receiving element has an electron transport layer on a third electrode, an active layer on the electron transport layer, a hole transport layer on the active layer, a compound layer on the hole transport layer, a fourth electrode on the compound layer, and further protective layers on the second and fourth electrodes, and the active layer is an electronic device that receives infrared light that has passed through the protective layer, the fourth electrode, the hole transport layer, and the compound layer.

[0010] In the above configuration, the compound layer contains molybdenum oxide and reduces sputtering damage to the photodetector that occurs during the formation of the protective layer, which is a transparent conductive film formed by the sputtering method. The fourth electrode can also reduce sputtering damage to the photodetector.

[0011] Furthermore, in the above configuration, the direction in which voltage is applied to the light-emitting layer of the light-emitting element and the direction in which voltage is applied to the active layer of the photodetector are the same. That is, by configuring the pixel electrode of the light-emitting element to be on the high-voltage side and the lower electrode of the photodetector to be on the high-voltage side, the power supply amplitude can be reduced, and the power consumption of electronic devices can be reduced.

[0012] Furthermore, in the above configuration, the second electrode and the fourth electrode are made of a silver-magnesium alloy material, and the film thickness of the second electrode and the fourth electrode is 20 nm or less. In the above configuration, it is preferable that the film thickness of the second electrode be 20 nm or less in order to allow the light emitted from the light-emitting layer to pass through. In the above configuration, the light emitted from the light-emitting layer passes through the second electrode and is perceived by the user's eye. If the film thickness of the second electrode becomes thicker than 20 nm, the extraction efficiency of the light-emitting element will decrease.

[0013] Furthermore, while it is possible to omit the fourth electrode in the light-receiving element, which would act as a light-reflecting or light-shielding film, the inventors have found through numerous experiments that omitting the fourth electrode makes leakage currents more likely to occur. Therefore, to obtain stable sensing characteristics, it is necessary to include the fourth electrode. In the case of the configuration without the fourth electrode, the cause of leakage currents is presumed to be sputtering damage during the formation of the protective layer placed above.

[0014] If the film thickness of the fourth electrode is made thicker than 20 nm, the light-receiving sensitivity (specifically in the 800 nm wavelength range) deteriorates, making it difficult for the photodetector to sense light. Therefore, it is preferable to keep the film thickness of the fourth electrode thin, preferably 20 nm or less, and more preferably 10 nm or less. Furthermore, the inventors have found through numerous experiments that even if the fourth electrode is provided on the active layer with a film thickness of 1 nm to 20 nm, preferably 10 nm or less, the light-receiving sensitivity of the active layer can be kept good. A photodetector having a fourth electrode with a film thickness of 1 nm to 20 nm, preferably 10 nm or less, can receive light not only in the 800 nm infrared range but also in a wide wavelength range including infrared light (375 nm to 825 nm). Therefore, light in a wide wavelength range including infrared light passes through the fourth electrode and reaches the active layer.

[0015] The inventors estimate that by providing a fourth electrode with a film thickness of 1 nm to 20 nm, preferably 10 nm or less, sputtering damage to the photodetector can be reduced, thereby enabling the realization of an excellent photodetector.

[0016] Furthermore, the process is not limited to forming the light-emitting element and the photodetector on the same substrate and forming the second electrode of the light-emitting element and the fourth electrode of the photodetector as common electrodes in the same process; it may also be a process in which the film thickness of the fourth electrode is thinner than that of the second electrode. For example, by depositing a silver-magnesium alloy material film with a thickness of 10 nm, and then using a deposition mask to deposit a silver-magnesium alloy material film with a thickness of 5 nm only on the pixel area, the film thickness of the second electrode of the light-emitting element can be selectively formed to 15 nm and the film thickness of the fourth electrode of the photodetector to 10 nm.

[0017] In this specification, a compound layer refers to a layer containing an organic compound material, an inorganic compound material, or both. The light-emitting layer of a light-emitting element has at least one organic compound material, and the active layer of a photodetector also has at least one organic compound material.

[0018] One aspect of the present invention can provide a miniaturized optical device or electronic device. Alternatively, one aspect of the present invention can provide a miniaturized optical device or electronic device equipped with a gaze detection function. Alternatively, one aspect of the present invention can provide a novel optical device or electronic device. Alternatively, one aspect of the present invention can provide a novel optical device or electronic device equipped with a gaze detection function.

[0019] Furthermore, the description of these effects does not preclude the existence of other effects. Moreover, one aspect of the present invention does not necessarily have to possess all of these effects. Other effects can be extracted from this specification, the drawings, or the claims.

[0020] Figures 1A and 1B are examples of top views showing one embodiment of the present invention. Figures 2A, 2B, and 2C are examples of cross-sectional views showing one embodiment of the present invention. Figure 3A shows an external view, and Figure 3B is an example of a schematic diagram of a laminated structure. Figure 4A is a diagram illustrating an example of the configuration of a display device, and Figures 4B and 4C are external views of an electronic device. Figures 5A, 5B, and 5C are examples of cross-sectional views showing a manufacturing method according to one embodiment of the present invention. Figures 6A, 6B, 6C, and 6D are examples of cross-sectional views showing a manufacturing method according to one embodiment of the present invention. Figures 7A, 7B, 7C, and 7D are examples of cross-sectional views showing a manufacturing method according to one embodiment of the present invention. Figures 8A, 8B, and 8C are examples of cross-sectional views showing a manufacturing method according to one embodiment of the present invention. Figures 9A, 9B, and 9C are examples of cross-sectional views showing a manufacturing method according to one embodiment of the present invention. Figures 10A, 10B, and 10C are examples of cross-sectional views showing a manufacturing method according to one embodiment of the present invention. Figures 11A, 11B, 11C, and 11D are examples of cross-sectional views of one embodiment of the present invention. Figures 12A and 12B are examples of top views of one embodiment of the present invention. Figure 13 is a schematic cross-sectional view showing the stacked structure of the photodetector 1. Figure 14 is a diagram showing the current density-voltage characteristics of the photodetector 1. Figure 15 is a diagram showing the external quantum efficiency of the photodetector 1.

[0021] Embodiments of the present invention will be described in detail below with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and its form and details can be modified in various ways. Furthermore, the present invention is not to be interpreted as being limited to the embodiments described below.

[0022] In this specification, the terms "first" and "second" may be used for convenience to understand the technical content or to identify each component. Therefore, the terms "first" and "second" do not limit the number of each component. Nor do the terms "first" and "second" limit the order of each component. Furthermore, the terms "first" and "second" or identification codes used in this specification may not correspond to the terms or identification codes in the claims of this patent.

[0023] (Embodiment 1) This embodiment describes a display device according to one aspect of the present invention.

[0024] As shown in Figure 1A, the display device has a pixel section 177 in which a plurality of pixels 178 are arranged in a matrix. The pixels 178 include sub-pixels 110R, sub-pixels 110G, and sub-pixels 110B. By arranging three types (R, G, B) of light-emitting elements in the pixel section 177, a special pixel arrangement method such as the pentile method can be applied, and a display device with a resolution of 500 ppi or more, 1000 ppi or more, 2000 ppi or more, 3000 ppi or more, or even 5000 ppi or more can be realized with different aperture areas for R, G, and B, as shown in Figure 1. For example, the size of the pixel section 177 is set to 1.5 inches diagonally, the number of pixels is set to 6000 x 3 types (R, G, B) x 4500, and the aperture area ratio of R:G:B is set to 1:1.5:2.1, resulting in an aperture ratio of 40.1% and achieving 5009 ppi.

[0025] In this specification, for example, when describing matters common to sub-pixels 110R, 110G, and 110B, they may be referred to as sub-pixel 110. Similarly, when describing matters common to other components distinguished by letters, the letters may be omitted and the corresponding symbols used.

[0026] Sub-pixel 110R emits red light, sub-pixel 110G emits green light, and sub-pixel 110B emits blue light. This allows an image to be displayed on the pixel section 177. In this embodiment, three sub-pixels of red (R), green (G), and blue (B) are used as an example, but the number of sub-pixels is not limited to three; there may be four or more. Examples of four sub-pixels include sub-pixels of four colors: R, G, B, and white (W), or sub-pixels of four colors: R, G, B, and yellow (Y).

[0027] In this specification and other documents, the row direction may be referred to as the X direction and the column direction as the Y direction. The X and Y directions intersect, for example, perpendicularly.

[0028] Figure 1A shows an example where subpixels of different or the same color are arranged side by side in the X or Y direction.

[0029] FIG. 2A is an example of a cross-sectional view between the dashed-dotted lines A1 - A2 in FIG. 1A. In FIG. 2A, three types of sub-pixels 110R, 110G, and 110B are arranged, and among them, the red light-emitting element 130R shows that the first electrode 101R, which is the lower electrode, is a laminate of a conductive layer 151R and a conductive layer 152R.

[0030] Outside the pixel portion 177, a connection portion 140 is provided, and a light-receiving region 62PD, or a light-emitting region 61IR, or both of them may be provided.

[0031] FIG. 1A shows the pixel portion 177, the connection portion 140, and the light-receiving region 62PD arranged at intervals. It can also be said that the connection portion 140 is provided between the pixel portion 177 and the light-receiving region 62PD.

[0032] FIG. 2B is an example in which cross-sectional views between the dashed-dotted lines A3 - A4, between the dashed-dotted lines D1 - D2, and between B1 - B2 in FIG. 1A are arranged side by side. In the cross-sectional view between B1 - B2, there is a compound layer 86PD including an active layer on the insulating layer 158PD. Also, the compound layer 86PD is formed on the insulating layer 127. Further, a compound layer 11�PD is formed on the compound layer 86PD. Also, a common electrode 155 is formed on the compound layer 115PD. A plurality of light-receiving elements 62 having the compound layer 86PD are provided in the light-receiving region 62PD. In this embodiment, an example of installing a plurality of light-receiving elements 62 is shown, but by installing at least one, it is possible to detect the blinking of the user's eye.

[0033] Also, the insulating layer 158PD is formed in the same process as the insulating layers 158R, 158G, and 158B of the pixel portion.

[0034] In the cross-sectional view between the dashed-dotted lines D1 - D2 in FIG. 1A shown in FIG. 2B, the connection portion 140 is shown. As shown in FIG. 2B, a conductive layer 152C called a cathode contact is provided in the connection portion 140. The conductive layer 152C is formed so as to contact the common electrode 155. The common electrode 155 of the connection portion 140 has the same pattern as the second electrodes 102 of the light-emitting elements 130R, 130G, and 130B, and is formed in the same process. Also, as shown in FIG. 2B, the common electrode 155 in the connection portion 140 is formed on the insulating layer 158C and has a region formed in contact with the insulating layer 127.

[0035] The organic materials to be deposited in the deposition regions of the pixel portion 177 and the light-receiving element 62 are different, and since they are formed using different deposition masks, it is preferably designed to have a distance of 200 μm or more from each other.

[0036] Also, the second electrodes 102 of the sub-pixels 110R, 110G, and 110B are formed in the same pattern using a common mask with the common electrode 155 of the light-receiving element 62. Also, the second EL layer 105 deposited on the insulating layer 127 is part of the light-emitting element, but as shown in FIG. 2B, it is not formed in the connection portion 140. Also, the compound layer 115PD deposited on the insulating layer 127 is part of the light-receiving element, but as shown in FIG. 2B, it is not formed in the connection portion 140. Also, since the second EL layer 105 and the compound layer 115PD are made of different materials, they are deposited separately.

[0037] Figure 1B shows an example in which the light-emitting region 61IR, connection portion 140, and pixel portion 177 are arranged with intervals between them. Figure 2C is an example of a cross-sectional view between the dashed lines E1 and E2 in Figure 1B. Multiple light-emitting elements 61, each having a compound layer 85IR, are provided in the light-emitting region 61IR. The light-emitting element 61 has a compound layer 85IR on a conductive layer 152IR, a compound layer 105IR on the compound layer 85IR, and a common electrode 155 on the compound layer 105IR. The compound layer 85IR and the second EL layer 105, which is part of the light-emitting element, may be made of the same material, in which case they can be formed in the same process. If different materials are used for the compound layer 85IR and the second EL layer 105, they are deposited separately. In this embodiment, an example in which multiple light-emitting elements 61 are installed is shown, but infrared light irradiation to the user's eyes is possible by installing at least one. Since infrared light is not perceived by the human eye, shining it directly on the eye will produce no reaction if the intensity is low. By receiving the reflected light with a photodetector, it is possible to check for the presence or absence of eyelids and detect blinking, making it ideal for electronic devices for VR or AR.

[0038] When both a light-receiving area 62PD and a light-emitting area 61IR are provided, connection parts 140 are provided on both sides of the pixel section 177, and the light-emitting area 61IR, one connection part 140, the pixel section 177, the other connection part 140, and the light-receiving area 62PD are arranged with a gap between them.

[0039] In this embodiment, in order to reduce the photolithography process, the active layer (compound layer 86PD) of the photodetector 62 and the light-emitting layer (compound layer 85IR) of the light-emitting element 61 are formed in separate processes using separate vapor-deposited metal masks. Furthermore, since compound layer 115PD and compound layer 105IR are made of different materials, they are formed in separate processes using separate vapor-deposited metal masks. In addition, the photodetector 62 may be designed to be patterned in an array of X rows (where X is a natural number) and Y columns (where Y is a natural number) in order to enable imaging of the eye. In this embodiment, the light-receiving area 62PD of the photodetector has an aperture area of ​​2.3 mm × 1.5 mm, and nine of them are arranged in a line in the Y direction.

[0040] The n-type semiconductor material of the active layer of the photodetector 62 is fullerene (for example, C６０ , C ７０ Examples include electron-accepting organic semiconductor materials such as fullerene derivatives.

[0041] Furthermore, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0042] Examples of p-type semiconductor materials for the active layer of the photodetector 62 include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperifuranthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone.

[0043] Furthermore, examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. In addition, examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0044] The HOMO (Highest Occupied Molecular Orbital) level of electron-donating organic semiconductor materials is preferably higher than the HOMO level of electron-accepting organic semiconductor materials. The LUMO (Lowest Unoccupied Molecular Orbital) level of electron-donating organic semiconductor materials is preferably higher than the LUMO level of electron-accepting organic semiconductor materials.

[0045] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0046] For example, the active layer of the photodetector 62 is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer of the photodetector 62 may have a laminated structure of a layer having an n-type semiconductor and a layer having a p-type semiconductor.

[0047] The pixel section 177 of the display device shown in Figure 2A is composed of three types of light-emitting elements 130R, 130G, and 130B to form one pixel 178.

[0048] As shown in Figure 2A, the display device includes an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and on the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 is provided on a substrate (not shown). The insulating layer 175, insulating layer 174, and insulating layer 173 are provided with openings that reach the conductive layer 172, and wiring 176 is provided to fill these openings.

[0049] In the pixel section 177, light-emitting elements 130R, 130G, and 130B are provided on the insulating layer 175 and the wiring 176. A protective layer 131 is provided so as to cover the light-emitting elements 130R, 130G, and 130B. A sealing substrate 120 is bonded to the protective layer 131 by a resin layer 122. The sealing substrate 120 is a light-transmitting substrate, specifically a glass substrate. Furthermore, it is preferable that an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided between adjacent light-emitting elements 130R, 130G, and 130B. In this embodiment, in order to improve the reliability of the light-emitting elements 130R, 130G, and 130B, an example is shown in which the areas overlapping with the light-emitting elements 130R, 130G, and 130B are protected by the resin layer 122 and the sealing substrate 120. However, the light-receiving area 62PD or the light-emitting area 61IR may also be protected by the resin layer 122 and the sealing substrate 120. Furthermore, a microlens may be installed between the sealing substrate 120 and the light-receiving element 62.

[0050] When the display device is viewed from above, it is preferable that the inorganic insulating layer 125 and the insulating layer 127 are connected as one unit. In other words, it is preferable that the insulating layer 127 is an insulating layer having an opening on the first electrode.

[0051] The light-emitting elements 130R, 130G, and 130B emit light of different colors from each other. For example, light-emitting element 130R can emit red light, light-emitting element 130G can emit green light, and light-emitting element 130B can emit blue light.

[0052] One embodiment of the present invention is a top-emission type display device that emits light in the opposite direction to the substrate on which the light-emitting element is formed.

[0053] The light-emitting element 130R includes a first electrode 101R (pixel electrode) consisting of a conductive layer 151R and a conductive layer 152R, a first EL layer 104R on the first electrode 101R, a compound layer (second EL layer 105 on the first EL layer 104R), and a second electrode 102 on the second EL layer 105. The second EL layer 105 is preferably located on the second electrode 102 side of the light-emitting layer, and is preferably a hole-blocking layer, a second electron transport layer, or an electron injection layer, or a stack of these. With this configuration, damage to the light-emitting layer or active layer during the photolithography process can be suppressed, and good film quality and electrical properties can be expected.

[0054] In this specification, the term "light-emitting layer" refers to at least one layer included in the first EL layer 104R, and although the second EL layer 105 contributes to the light-emitting phenomenon of the light-emitting element, it is not referred to as a light-emitting layer.

[0055] The light-emitting element 130G also includes a first electrode 101G (pixel electrode) consisting of a conductive layer 151G and a conductive layer 152G, a first EL layer 104G on the first electrode 101G, a second EL layer 105 on the first EL layer 104G, and a second electrode 102 on the second EL layer 105. The second EL layer 105 is preferably a hole-blocking layer, a second electron-transport layer, or an electron-injection layer, or a stack of these.

[0056] The light-emitting element 130B also includes a first electrode 101B (pixel electrode) consisting of a conductive layer 151B and a conductive layer 152B, a first EL layer 104B on the first electrode 101B, a second EL layer 105 on the first EL layer 104B, and a second electrode 102 on the second EL layer 105. The second EL layer 105 is preferably a hole-blocking layer, a second electron transport layer, or an electron injection layer, or a stack of these.

[0057] Of the pixel electrodes (first electrodes) and common electrodes (second electrodes) of the light-emitting element, one functions as the anode and the other functions as the cathode. In this embodiment, unless otherwise specified, the pixel electrodes function as the anode and the common electrodes function as the cathode.

[0058] The first EL layer 104R, the first EL layer 104G, and the first EL layer 104B are independent island-like structures for each light-emitting element or for each light-emitting color. Preferably, the first EL layer 104R, the first EL layer 104G, and the first EL layer 104B do not overlap with each other. By providing the first EL layer 104 in an island-like structure for each light-emitting element 130, leakage current between adjacent light-emitting elements 130 can be suppressed even in high-definition display devices. This prevents crosstalk and enables the realization of a display device with extremely high contrast. In particular, it enables the realization of a display device with high current efficiency at low brightness.

[0059] The island-shaped first EL layer 104 can be formed by depositing an EL film and processing the EL using a photolithography method.

[0060] Furthermore, in a display device according to one aspect of the present invention, it is preferable that the first electrode 101 (pixel electrode) of the light-emitting element be in a stacked configuration. For example, in the example shown in Figure 2A, the first electrodes 101R, 101G, and 101B of the light-emitting elements 130R, 130G, and 130B are in a stacked configuration of conductive layers 151R, 151G, and 151B provided on the substrate 171 side and conductive layers 152R, 152G, and 152B provided on the compound layer side.

[0061] For example, metallic materials can be used as the conductive layers 151R, 151G, and 151B. Specifically, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing these in appropriate combinations can also be used.

[0062] As conductive layers 152R, 152G, and 152B, oxides having one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, it is preferable to use conductive oxides containing one or more of the following: indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. In particular, indium tin oxide containing silicon has a large work function, for example, a work function of 4.0 eV or more, so it can be suitably used as conductive layers 152R, 152G, and 152B.

[0063] The conductive layers 151R, 151G, and 151B may be a laminated structure of multiple layers having different materials, and the conductive layers 152R, 152G, and 152B may be a laminated structure of multiple layers having different materials. In this case, the conductive layers 151R, 151G, and 151B may have layers made of materials that can be used for the conductive layers 152R, 152G, and 152B, such as conductive oxides, and the conductive layers 152R, 152G, and 152B may also have layers made of materials that can be used for the conductive layers 151R, 151G, and 151B, such as metallic materials. For example, if the conductive layers 151R, 151G, and 151B are a laminated structure of two or more layers, the layers in contact with the conductive layers 152R, 152G, and 152B may be layers made of materials that can be used for the conductive layers 152R, 152G, and 152B.

[0064] Furthermore, it is preferable that the ends of the conductive layers 151R, 151G, and 151B have a tapered shape. Specifically, it is preferable that the ends of the conductive layers 151R, 151G, and 151B have a tapered shape with a taper angle of less than 90°. In this case, the conductive layers 152R, 152G, and 152B provided along the sides of the conductive layers 151R, 151G, and 151B also have a tapered shape. By making the sides of the conductive layers 152R, 152G, and 152B tapered, the coverage of the first EL layer 104 provided along the sides of the conductive layers 152R, 152G, and 152B can be improved.

[0065] Figure 3A shows a schematic diagram of the external appearance of the display device 100. Figure 3A shows an example in which a light-receiving area 62PD is arranged on one side of the pixel section 177 and a light-emitting area 61IR is arranged on the other side. The display device 100 also has five terminals 71 around the pixel section 177 for inputting and outputting signals from or to the outside.

[0066] A cathode contact 140R is provided between the pixel portion 177 and the light-receiving area 62PD, and a cathode contact 140L is provided between the pixel portion 177 and the light-emitting area 61IR.

[0067] Furthermore, as shown in Figure 3B, the display device 100 has a stacked structure, and it is preferable that a semiconductor circuit, such as a gate line drive circuit (gate driver) or a source line drive circuit (source driver), is configured as a drive circuit 96 for the pixel portion 177 at a position overlapping with the pixel portion 177. In addition to the above, a CPU 56 including, for example, an arithmetic circuit or a memory circuit may be configured. A functional circuit 57 such as a temperature sensor may also be configured.

[0068] Furthermore, a sensor drive circuit 54 is provided in a position overlapping with the light-receiving area 62PD, and an IR light-emitting element drive circuit 55 is provided in a position overlapping with the light-emitting area 61IR. In addition, a microlens array may be installed in a position overlapping with the light-receiving area 62PD to increase the light-receiving sensitivity. In addition, a microlens array may be installed in a position overlapping with the light-emitting area 61IR to increase the light emission intensity.

[0069] These drive circuits preferably use a semiconductor substrate on which semiconductor circuits, including semiconductor elements such as transistors, are formed. In this embodiment, these circuits are formed on a semiconductor substrate, and the display device 100 has a chip size of 12 mm × 16 mm. For example, a single-crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or a semiconductor substrate such as an SOI substrate can be used.

[0070] Figure 4A shows an example of a block diagram when a display system is configured using the display device 100 shown in Figure 3A as a display module.

[0071] The display system 10 shown in Figure 4A includes a drive circuit 30, a function circuit 40, and multiple pixels 230, as well as pixels 230IR, sensor 125IR, sensor 125T, input / output unit IO, and multiplexer MUX.

[0072] For example, a CPU can be used as the functional circuit 40. In this case, it is preferable that the functional circuit 40 is composed of multiple CPUs (for example, 2 to 128, typically 4). This enables parallel processing by multiple CPUs, thereby achieving faster processing. A CPU can be used for the analog-to-digital conversion of data obtained from the photodetector.

[0073] The input / output unit (IO) is connected to the bus wiring BW of the display system 10 and has the function of controlling external input signals and output signals from the display system 10 to the bus wiring BW.

[0074] The multiplexer MUX has the function of controlling the signals input to the drive circuit 30. The drive circuit 30 receives either a signal input from the functional circuit 40 via the multiplexer MUX, or a signal input from an external source via the input / output unit I / O.

[0075] Each pixel 230IR has a light-emitting element that emits infrared light and a pixel circuit that drives the light-emitting element. The operation of the pixel 230IR is controlled by the drive circuit 30, similar to the pixel 230. The sensor 125IR has the function of receiving infrared light. It is preferable that the pixel 230IR and the sensor 125IR are each arranged outside the pixel section where the pixel 230 is provided. It is also preferable that there are multiple pixels 230IR and sensors 125IR.

[0076] For example, the pixel 230IR and sensor 125IR can detect the user's blinking motion. More specifically, the built-in sensor 125IR can measure the amount of reflected light from the infrared light emitted by the pixel 230IR that is reflected by the user's eye, and this is used to detect the blinking pattern. This allows for the detection of the user's fatigue level. This function can be said to be a feature that takes the user's safety and security into consideration.

[0077] Furthermore, the display system 10 has a foveal rendering function. For example, the function circuit 40 can generate and control the operating parameters when the drive circuit 30 performs foveal rendering. Foveal rendering is achieved by adjusting the resolution for each 4x3x4 block.

[0078] Furthermore, the drive circuit 30 can output analog data relating to the output voltage of the source driver circuit's amplifier to the function circuit 40. The function circuit 40 converts the analog data into digital data, generates correction data based on the digital data, and reflects this in the potential of the output video data, thereby correcting the output of the amplifier.

[0079] Various sensors can be used for the sensor 125T as described above, but here a temperature sensor capable of measuring temperature can be used. The sensor 125T can measure the temperature of one or both of the functional circuit 40 and the drive circuit 30.

[0080] Furthermore, it is preferable that the functional circuit 40 has the function of holding specific video data. By outputting this video data to the drive circuit 30, the operation of the drive circuit 30 can be verified (debug control) without requiring external video data input.

[0081] By applying such a display system 10 to electronic devices, further miniaturization and multi-functionalization of the devices can be achieved.

[0082] Figure 4B shows a perspective view of a glasses-type (goggle-type) electronic device 600 to which the display system 10 is applied. Figure 4B is also a perspective view of the electronic device 600 as seen from the housing 605 side.

[0083] In the glasses-type (goggle-type) electronic device 600, two display devices are required, one for the right eye and one for the left eye. The display device 100 shown in Figure 3 is equivalent to the display device 100 shown in Figure 3, with a display device 100R for the right eye and a display device 100L for the left eye. The display device 100 shown in Figure 3 has a light-receiving element that can detect the user's blinking. By using the light-receiving element, the number of blinks, eyelid movement, and pupil size of the user can be measured.

[0084] Figure 4B illustrates how the electronic device 600, which includes a pair of display devices (display device 100L and display device 100R), a motion detection unit 601, a calculation unit 603, and a communication unit 604, is housed within a housing 605. The motion detection unit 601 has the function of detecting the movement of the housing 605, that is, the movement of the user's head wearing the electronic device 600. The motion detection unit 601 can use, for example, a motion sensor using MEMS technology.

[0085] Furthermore, the electronic device 600 may also be equipped with a sensor 625. Preferably, the sensor 625 has the function of acquiring one or more of the user's visual, auditory, tactile, gustatory, and olfactory information. More specifically, preferably, the sensor 625 has the function of detecting or measuring one or more of the following information: force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, magnetism, temperature, sound, time, electric field, current, voltage, power, radiation, humidity, gradient, vibration, odor, and infrared radiation. The electronic device 600 may also be equipped with one or more sensors 625.

[0086] Furthermore, it is preferable to provide the electronic device 600 with an imaging device 629 for imaging the surroundings. The imaging device 629 can capture images of the surroundings and display them on the display devices 100L and 100R. It is also possible to overlay other information on the images acquired by the imaging device 629 and display them on the display devices 100L and 100R.

[0087] Figure 4C is a perspective view of the electronic device 600 from the mounting portion 606 side. In addition to the display devices 100L and 100R and the calculation unit 603 mentioned above, Figure 4C also shows the mounting portion 606, the buffer member 607, and the pair of lenses 608. The display device 100L is positioned so that it can be seen through one of the pair of lenses 608. The display device 100R is positioned so that it can be seen through the other of the pair of lenses 608. The size of the lens 608 may be larger or smaller than that of the display device 100L, and the designer of the electronic device 600 may decide as appropriate.

[0088] The electronic device 600 also has an input terminal 609 and an output terminal 610 on its housing 605. A cable can be connected to the input terminal 609 to receive image data from a video output device or the like, or power to charge a battery (not shown) located inside the housing 605. The output terminal 610 functions, for example, as an audio output terminal, and earphones, headphones, etc., can be connected to it.

[0089] Furthermore, it is preferable that the housing 605 has a mechanism that allows the lens 608, the display device 100L, and the display device 100R to be in an optimal position according to the user's eye position. It is also preferable that the housing 605 has a mechanism that adjusts the focus by changing the distance between the lens 608 and the display devices 100L and 100R.

[0090] An electronic device according to one aspect of the present invention may further include an earphone 606A. The earphone 606A has a communication unit (not shown) and has wireless communication functionality. The earphone 606A can output audio data through its wireless communication functionality. Preferably, the earphone 606A has a vibration mechanism in order to function as a bone conduction earphone.

[0091] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0092] (Embodiment 2) In this embodiment, first, an example of the method for manufacturing the pixel portion 177 shown in Embodiment 1 will be described using Figures 5 to 10. In Figures 5 to 10, the same reference numerals used in Figures 1A, 1B, and 2A will be used for the same parts.

[0093] [Example of manufacturing method 1] The thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed using sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD), or atomic layer deposition (ALD).

[0094] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by wet film deposition methods such as spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0095] Furthermore, when processing the thin films that make up the display device, the processing can be done using methods such as photolithography.

[0096] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof. Other light sources such as ultraviolet light, KrF laser light, or ArF laser light can also be used. Exposure may also be performed using immersion lithography. Furthermore, extreme ultraviolet (EUV) light or X-rays may be used as the light source for exposure. An electron beam can also be used instead of the light source for exposure.

[0097] For etching thin films, dry etching, wet etching, or sandblasting methods can be used.

[0098] First, as shown in Figure 5A, an insulating layer 171 is formed on a substrate (not shown). Next, a conductive layer 172 is formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layer 172. Subsequently, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0099] As the substrate, a substrate with sufficient heat resistance to withstand subsequent heat treatment can be used. For example, single-crystal semiconductor substrates made of silicon or silicon carbide, polycrystalline semiconductor substrates, compound semiconductor substrates such as silicon germanium, and SOI substrates can be used. Furthermore, when using a semiconductor substrate, one with the drive circuit and connecting electrodes already formed on it should be used.

[0100] Next, as shown in Figure 5A, openings reaching the conductive layer 172 are formed in the insulating layer 175, insulating layer 174, and insulating layer 173. Subsequently, wiring 176 is formed to fill these openings.

[0101] Next, as shown in Figure 5A, conductive films 101f, which will later become the first electrodes 101R, 101G, and 101B, are formed on the wiring 176 and the insulating layer 175. The conductive films 101f are formed by laminating a metal material layer and a transparent conductive layer. The conductive layer 151f below the conductive films 101f can be made of, for example, a metal material. The conductive layer 152f above the conductive films 101f can be made of, for example, a conductive oxide (such as ITO). In addition, connecting electrodes for connecting to the drive circuit below are formed in the same process as these conductive layers. Conductive layers that will serve as cathode contacts are formed at least around the pixel area.

[0102] Next, as shown in Figure 5A, a resist mask 191 is formed on the conductive film 101f. The resist mask 191 can be formed by applying a photosensitive material (photoresist), exposing it to light, and developing it.

[0103] Next, as shown in Figure 5B, for example, the conductive film 101f in the region that does not overlap with the resist mask 191 is removed. This forms the first electrode 101R, the first electrode 101G, and the first electrode 101B.

[0104] Next, as shown in Figure 5C, the resist mask 191 is removed. The resist mask 191 can be removed, for example, by ashing using oxygen plasma.

[0105] Next, as shown in Figure 6A, an insulating film 154f is formed on the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the insulating layer 175.

[0106] As the insulating film 154f, an inorganic material, such as a silicon oxidoxide film, can be used. In this specification, "oxiditride" refers to a material whose composition contains more oxygen than nitrogen, and "nitride oxide" refers to a material whose composition contains more nitrogen than oxygen. For example, when "silicon oxidoxide" is written, it refers to a material whose composition contains more oxygen than nitrogen, and when "silicon nitride oxide" is written, it refers to a material whose composition contains more nitrogen than oxygen. In addition, an organic insulating material can also be used as the insulating film 154f.

[0107] Next, as shown in Figure 6B, the insulating film 154f is processed to form an insulating layer 154 that covers the edges of the conductive layer 152R, the conductive layer 152G, and the conductive layer 152B. The area of ​​the conductive layer not covered by the insulating layer 154 corresponds to the aperture area in the pixel portion.

[0108] Next, as shown in Figure 6C, the compound film 103Rf is formed on the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the insulating layer 154.

[0109] Next, as shown in Figure 6C, a sacrificial film 158Rf and a mask film 159Rf are formed.

[0110] By providing a sacrificial film 158Rf on the compound film 103Rf, the damage sustained by the compound film 103Rf during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-emitting element.

[0111] For the sacrificial film 158Rf, a film with high resistance to the processing conditions of the compound film 103Rf is used, specifically a film with a high etching selectivity ratio with the compound film 103Rf. For the mask film 159Rf, a film with a high etching selectivity ratio with the sacrificial film 158Rf is used.

[0112] Furthermore, it is preferable that the sacrificial film 158Rf, which is formed in contact with the compound film 103Rf, is formed using a method that causes less damage to the compound film 103Rf than the mask film 159Rf. For example, the ALD method or vacuum deposition method is preferred over the sputtering method.

[0113] The sacrificial film 158Rf and the mask film 159Rf can be, for example, one or more of the following: a metal film, an alloy film, a metal or metal compound film, a semiconductor film, an organic insulating film, and an inorganic insulating film.

[0114] The sacrificial film 158Rf and the mask film 159Rf can be made of metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metallic materials. In particular, it is preferable to use low-melting-point materials such as aluminum or silver. It is preferable to use a metallic material capable of shielding ultraviolet rays for one or both of the sacrificial film 158Rf and the mask film 159Rf, as this can suppress the irradiation of the compound film 103Rf with ultraviolet rays during pattern exposure and suppress the degradation of the compound film 103Rf.

[0115] Furthermore, the sacrificial film 158Rf and the mask film 159Rf can be made of metals or metal compounds such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), or silicon-containing indium tin oxide, respectively.

[0116] Furthermore, in the above metal or metallic compound, element M (where M is one or more selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium) may be used instead of gallium.

[0117] For the sacrificial film 158Rf and the mask film 159Rf, it is preferable to use semiconductor materials such as silicon or germanium, for example, because they have high compatibility with semiconductor manufacturing processes. Alternatively, a compound containing the above semiconductor material can be used.

[0118] Furthermore, various inorganic insulating films can be used as the sacrificial film 158Rf and the mask film 159Rf, respectively. In particular, oxide insulating films are preferred because they have higher adhesion to the compound film 103Rf compared to nitride insulating films.

[0119] Next, as shown in Figure 6C, a resist mask 190R is formed. The resist mask 190R can be formed by applying a photosensitive material (photoresist), followed by exposure and development.

[0120] The resist mask 190R is smaller than the area of ​​the first electrode 101R and is positioned to overlap with the first electrode 101R.

[0121] Next, as shown in Figure 6D, a resist mask 190R is used to remove a portion of the mask film 159Rf and form a mask layer 159R. The mask layer 159R remains on the first electrode 101R. After that, the resist mask 190R is removed. Subsequently, the mask layer 159R is used as a mask (also called a hard mask) to remove a portion of the sacrificial film 158Rf and form an insulating layer 158R.

[0122] By using the wet etching method, damage to the compound film 103Rf during processing of the sacrificial film 158Rf and the mask film 159Rf can be reduced compared to the dry etching method. When using the wet etching method, for example, an alkaline aqueous solution such as a developer, an aqueous solution of tetramethylammonium hydroxide (TMAH), or an acidic aqueous solution such as dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof can be used. However, it is preferable to perform wet etching using an aqueous solution containing phosphoric acid and hydrofluoric acid (preferably an aqueous solution containing phosphoric acid and hydrofluoric acid but not nitric acid). By performing wet etching using an aqueous solution containing phosphoric acid and hydrofluoric acid (preferably an aqueous solution containing phosphoric acid and hydrofluoric acid but not nitric acid), the occurrence of dark spots and shrinkage can be suppressed, making it possible to provide a display device with good characteristics even for ultra-high-definition display devices.

[0123] Furthermore, when using a dry etching method for processing the sacrificial film 158Rf, the degradation of the compound film 103Rf can be suppressed by not using an oxygen-containing gas as the etching gas.

[0124] The resist mask 190R can be removed in the same manner as the resist mask 191.

[0125] Next, as shown in Figure 6D, the compound film 103Rf is processed to form the compound layer 103R. For example, the mask layer 159R and the insulating layer 158R are used as a hard mask to remove a portion of the compound film 103Rf and form the compound layer 103R.

[0126] As a result, as shown in Figure 6D, a laminated structure of the compound layer 103R, the insulating layer 158R, and the mask layer 159R remains on the conductive layer 152R.

[0127] The compound film 103Rf is preferably processed by anisotropic etching. In particular, anisotropic dry etching is preferred. Alternatively, wet etching may be used.

[0128] When using the dry etching method, the degradation of the compound film 103Rf can be suppressed by not using an oxygen-containing gas as the etching gas.

[0129] Further, a gas containing oxygen may be used as the etching gas. By including oxygen in the etching gas, the etching rate can be increased. Therefore, etching can be performed under low-power conditions while maintaining the etching rate at a sufficient speed. For this reason, damage to the compound film 103Rf can be suppressed. Furthermore, problems such as adhesion of reaction products generated during etching can be suppressed.

[0130] When using a dry etching method, for example, H ２ , CF ４ , C ４ F ８ , SF ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ , or a gas containing one or more of the Group 18 elements such as He and Ar is preferably used as the etching gas. Alternatively, it is preferable to use one or more of these and a gas containing oxygen as the etching gas. Alternatively, oxygen gas may be used as the etching gas.

[0131] Subsequently, as shown in FIG. 7A, a compound film 103Gf that will later become the compound layer 103G is formed.

[0132] The compound film 103Gf can be formed by the same method as the method used for forming the compound film 103Rf. Also, the compound film 103Gf can have the same configuration as the compound film 103Rf.

[0133] Subsequently, as shown in FIG. 7A, a sacrificial film 158Gf and a mask film 159Gf are formed in order. Thereafter, a resist mask 190G is formed. The materials and formation methods of the sacrificial film 158Gf and the mask film 159Gf are the same as the conditions applicable to the sacrificial film 158Rf and the mask film 159Rf. The materials and formation methods of the resist mask 190G are the same as the conditions applicable to the resist mask 190R.

[0134] The resist mask 190G is smaller than the area of the conductive layer 152G and is provided at a position overlapping the conductive layer 152G.

[0135] Next, as shown in Figure 7B, a portion of the mask film 159Gf is removed using the resist mask 190G to form a mask layer 159G. The mask layer 159G remains on the conductive layer 152G. After that, the resist mask 190G is removed. Subsequently, the mask layer 159G is used as a mask to remove a portion of the sacrificial film 158Gf to form an insulating layer 158G. In this embodiment, a portion of the sacrificial film 158Gf is removed by dry etching.

[0136] Next, the compound film 103Gf is processed to form the compound layer 103G. As a result, as shown in Figure 7B, a laminated structure of the compound layer 103G, insulating layer 158G, and mask layer 159G remains on the conductive layer 152G. The insulating layer 154, mask layer 159R, and conductive layer 152B are exposed.

[0137] Next, as shown in Figure 7C, a compound film 103Bf is formed.

[0138] The compound film 103Bf can be formed by the same method as that used to form the compound film 103Rf. Furthermore, the compound film 103Bf can have the same configuration as the compound film 103Rf.

[0139] Next, as shown in Figure 7C, a sacrificial film 158Bf and a mask film 159Bf are formed in sequence. After that, a resist mask 190B is formed. The materials and formation methods for the sacrificial film 158Bf and the mask film 159Bf are the same as those applicable to the sacrificial film 158Rf and the mask film 159Rf. The materials and formation methods for the resist mask 190B are the same as those applicable to the resist mask 190R.

[0140] The resist mask 190B is smaller in area than the conductive layer 152B and is positioned to overlap with the conductive layer 152B.

[0141] Next, as shown in Figure 7D, a portion of the mask film 159Bf is removed using the resist mask 190B to form a mask layer 159B. The mask layer 159B remains on the conductive layer 152B. After that, the resist mask 190B is removed. Subsequently, a portion of the sacrificial film 158Bf is removed using the mask layer 159B as a mask to form an insulating layer 158B. This is preferably done by wet etching using an aqueous solution containing phosphoric acid and hydrofluoric acid (preferably an aqueous solution containing phosphoric acid and hydrofluoric acid but not nitric acid). By performing wet etching using an aqueous solution containing phosphoric acid and hydrofluoric acid (preferably an aqueous solution containing phosphoric acid and hydrofluoric acid but not nitric acid), the occurrence of dark spots and shrinkage is suppressed, making it possible to provide a display device with good characteristics even for ultra-high-definition display devices.

[0142] Next, the compound film 103Bf is processed to form the compound layer 103B. For example, the mask layer 159B and the insulating layer 158B are used as a hard mask to remove a portion of the compound film 103Bf and form the compound layer 103B.

[0143] As a result, as shown in Figure 7D, the laminated structure of the compound layer 103B, insulating layer 158B, and mask layer 159B remains on the conductive layer 152B. In addition, the insulating layer 154, mask layer 159R, and mask layer 159G are exposed.

[0144] Furthermore, it is preferable that the sides of compound layer 103R, compound layer 103G, and compound layer 103B are perpendicular or approximately perpendicular to the surface to be formed. For example, it is preferable that the angle between the surface to be formed and these sides be 60 degrees or more and 90 degrees or less.

[0145] As described above, the distance between two adjacent compound layers 103R, 103G, and 103B formed using photolithography can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 350 nm or less. Here, this distance can be defined, for example, by the distance between two adjacent opposing ends of compound layers 103R, 103G, and 103B. By narrowing the distance between the island-shaped compound layers in this way, a display device with high resolution and a large aperture ratio can be provided. Furthermore, the distance between the first electrodes between adjacent light-emitting devices can also be narrowed, for example, to 10 μm or less, 8 μm or less, 5 μm or less, 3 μm or less, or 2 μm or less. It is preferable that the distance between the first electrodes between adjacent light-emitting devices is 350 nm or less.

[0146] Next, as shown in Figure 8A, it is preferable to remove the mask layer 159R, mask layer 159G, and mask layer 159B to expose the insulating layer 158R, insulating layer 158G, and insulating layer 158B.

[0147] The same method as the mask film processing method can be used for the mask layer removal process. In particular, by using a wet etching method, the damage to the compound layer 103 during mask layer removal can be reduced compared to when using a dry etching method.

[0148] Alternatively, the mask layer may be removed by dissolving it in a polar solvent such as water or alcohol. Examples of alcohols include ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0149] After removing the mask layer, a drying treatment may be performed to remove water adsorbed on the surface. For example, a heat treatment can be performed in an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 120°C. A reduced pressure atmosphere is preferable because it allows drying at a lower temperature.

[0150] Next, as shown in Figure 8B, an inorganic insulating film 125f is formed. As will be described later, an insulating film that will later become the insulating layer 127 is formed in contact with the upper surface of the inorganic insulating film 125f. For this reason, it is preferable that the upper surface of the inorganic insulating film 125f has high affinity for the material used for the insulating film that will become the insulating layer 127 (for example, a photosensitive resin composition containing acrylic resin). To improve this affinity, the upper surface of the inorganic insulating film 125f may be surface-treated. Specifically, it is preferable to hydrophobize (or increase the hydrophobicity of) the surface of the inorganic insulating film 125f. For example, it is preferable to treat with a silylation agent such as hexamethyldisilazane (HMDS). By hydrophobizing the upper surface of the inorganic insulating film 125f in this way, the insulating film 127f can be formed with good adhesion.

[0151] Next, as shown in Figure 8C, an insulating film 127f, which will later become the insulating layer 127, is formed on the inorganic insulating film 125f.

[0152] The substrate temperature when forming the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher, and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower, respectively.

[0153] As the inorganic insulating film 125f, it is preferable to form an insulating film with a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less, within the above substrate temperature range.

[0154] The inorganic insulating film 125f is preferably formed using, for example, the ALD method. The ALD method is preferable because it can reduce film formation damage and allow for the formation of a film with high coverage. As the inorganic insulating film 125f, for example, it is preferable to form an aluminum oxide film using the ALD method.

[0155] The insulating film 127f is preferably formed using the wet film formation method described above. The insulating film 127f is preferably formed using a photosensitive material, for example, by spin coating, and more specifically, it is preferably formed using a photosensitive resin composition containing an acrylic resin. Furthermore, the material of the insulating film 127f is preferably a material that does not contain PFAS (Per- and Polyfluoroalkyl Substance), specifically a material that does not contain perfluoroalkyl compounds and polyfluoroalkyl compounds (PFAS-free material).

[0156] Next, exposure is performed to expose a portion of the insulating film 127f to visible light or ultraviolet light. The insulating layer 127 is formed around the region sandwiched between any two of the conductive layers 152R, 152G, and 152B.

[0157] The width of the insulating layer 127 to be formed later can be controlled by the exposure area on the insulating film 127f. In this embodiment, the insulating layer 127 is processed so that it has a portion that overlaps with the upper surfaces of the conductive layer 152R, conductive layer 152G, and conductive layer 152B.

[0158] The light used for exposure preferably includes the i-line (wavelength 365 nm). Furthermore, the light used for exposure may also include at least one of the g-line (wavelength 436 nm) and the h-line (wavelength 405 nm).

[0159] Next, as shown in Figure 9A, development is performed to remove the exposed area of ​​the insulating film 127f and form the insulating layer 127a.

[0160] Next, as shown in Figure 9B, etching is performed using the insulating layer 127a as a mask to remove a portion of the inorganic insulating film 125f and thin the film thickness of parts of the insulating layers 158R, 158G, and 158B. As a result, the inorganic insulating layer 125 is formed beneath the insulating layer 127a. In addition, the surfaces of the thinned portions of the insulating layers 158R, 158G, and 158B are exposed. In the following, the etching process using the insulating layer 127a as a mask may be referred to as the first etching process.

[0161] The first etching process can be carried out by dry etching or wet etching. It is preferable that the inorganic insulating film 125f is formed using the same material as the insulating layer 158R, insulating layer 158G, and insulating layer 158B, as this allows the first etching process to be performed in a single step.

[0162] When performing dry etching, it is preferable to use a chlorine-based gas. Examples of chlorine-based gases include Cl ２ , BCl ３ SiCl ４ , and CCl ４ These can be used individually or in combination of two or more gases. In addition, oxygen gas, hydrogen gas, helium gas, and argon gas, etc., can be added to the chlorine-based gas as appropriate, individually or in combination of two or more gases. By using dry etching, regions with thin film thickness of insulating layer 158R, insulating layer 158G, and insulating layer 158B can be formed with good in-plane uniformity.

[0163] As the dry etching apparatus, a dry etching apparatus having a high-density plasma source can be used. A dry etching apparatus having a high-density plasma source can be, for example, an inductively coupled plasma (ICP) etching apparatus. Alternatively, a capacitively coupled plasma (CCP) etching apparatus having parallel plate electrodes can be used.

[0164] Furthermore, it is preferable to perform the first etching process by wet etching. By using the wet etching method, damage to the compound layer 103R, compound layer 103G, and compound layer 103B can be reduced compared to when the dry etching method is used. In this case, wet etching can be performed using a paddle method. It is preferable that the inorganic insulating film 125f is formed using the same material as the insulating layer 158R, insulating layer 158G, and insulating layer 158B, as the above etching process can be performed in one step. It is preferable to perform the first etching process by wet etching using an aqueous solution containing phosphoric acid and hydrofluoric acid (preferably an aqueous solution containing phosphoric acid and hydrofluoric acid but not nitric acid). By performing wet etching using an aqueous solution containing phosphoric acid and hydrofluoric acid (preferably an aqueous solution containing phosphoric acid and hydrofluoric acid but not nitric acid), the occurrence of dark spots and shrinkage can be suppressed, making it possible to provide a display device with good characteristics even for ultra-high-definition display devices.

[0165] In the first etching process, the insulating layers 158R, 158G, and 158B are not completely removed, and the etching process is stopped when the film thickness is reduced. By leaving the corresponding insulating layers 158R, 158G, and 158B on the compound layers 103R, 103G, and 103B in this way, damage to the compound layers 103R, 103G, and 103B in subsequent processing steps can be prevented.

[0166] Next, it is preferable to expose the entire substrate to visible light or ultraviolet light and irradiate the insulating layer 127a. The energy density of this exposure is 0 mJ / cm². ２ Even larger, 800 mJ / cm ２ The following is preferable: 0 mJ / cm ２ Larger, 500 mJ / cm ２ The following is more preferable: Performing such exposure after development may improve the transparency of the insulating layer 127a. In addition, it may be possible to lower the substrate temperature required for the heat treatment in a later process to deform the insulating layer 127a into a tapered shape.

[0167] Here, the presence of an oxygen barrier insulating layer (for example, an aluminum oxide film) as insulating layer 158R, insulating layer 158G, and insulating layer 158B reduces the diffusion of oxygen into compound layer 103R, compound layer 103G, and compound layer 103B.

[0168] Next, a heat treatment (also called post-bake) is performed. By performing the heat treatment, the insulating layer 127a can be deformed into an insulating layer 127 having a tapered shape on its side surface (Figure 9C). This heat treatment is performed at a temperature lower than the heat resistance temperature of the compound layer. The heat treatment can be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 130°C. The heating atmosphere may be an atmospheric atmosphere or an inert gas atmosphere. The heating atmosphere may also be an atmospheric pressure atmosphere or a reduced pressure atmosphere. This improves the adhesion between the insulating layer 127 and the inorganic insulating layer 125, and also improves the corrosion resistance of the insulating layer 127.

[0169] In the first etching process, the insulating layers 158R, 158G, and 158B are not completely removed, but rather left in a state where their film thickness has been reduced. This prevents the compound layers 103R, 103G, and 103B from being damaged and degraded during the heat treatment. Therefore, the reliability of the light-emitting device can be improved.

[0170] Next, as shown in Figure 10A, etching is performed using the insulating layer 127 as a mask to remove a portion of the insulating layer 158R, insulating layer 158G, and insulating layer 158B. This creates openings in the insulating layer 158R, insulating layer 158G, and insulating layer 158B, exposing the upper surfaces of the compound layer 103R, compound layer 103G, and compound layer 103B. In the following, this etching process may be referred to as the second etching process.

[0171] The edges of the inorganic insulating layer 125 are covered with the insulating layer 127. Figure 10A also shows an example where the insulating layer 127 covers a portion of the edge of the insulating layer 158G (specifically, the tapered portion formed by the first etching process), while the tapered portion formed by the second etching process is exposed.

[0172] The second etching process is performed by wet etching. By using the wet etching method, damage to compound layer 103R, compound layer 103G, and compound layer 103B can be reduced compared to when using the dry etching method. Wet etching can be performed using, for example, an alkaline solution or an acidic solution. It is preferable that the solution be an aqueous solution so that compound layer 103 does not dissolve. Furthermore, it is preferable that the second etching process be performed by wet etching using an aqueous solution containing phosphoric acid and hydrofluoric acid (preferably an aqueous solution containing phosphoric acid and hydrofluoric acid but not nitric acid). By performing wet etching using an aqueous solution containing phosphoric acid and hydrofluoric acid (preferably an aqueous solution containing phosphoric acid and hydrofluoric acid but not nitric acid), the occurrence of dark spots and shrinkage can be suppressed, making it possible to provide a display device with good characteristics even for ultra-high-definition display devices.

[0173] Next, as shown in Figure 10B, a second EL layer 105 and a second electrode 102 are formed on compound layer 103R, compound layer 103G, compound layer 103B, and insulating layer 127. In this specification, the second electrode 102 is formed using a deposition mask with a different opening position than the deposition mask used to form the second EL layer 105. In the region overlapping with the electrode layer that will become the cathode contact, the second EL layer 105 is formed using a deposition mask that does not form the second EL layer 105. The second electrode 102 can be formed by sputtering or vacuum deposition. The lamination of a lithium fluoride thin film formed by deposition as the second EL layer 105 and a silver thin film formed by deposition as the second electrode 102 can also be called a common electrode.

[0174] Next, as shown in Figure 10C, a protective layer 131 (also called a cap layer) is formed on the second electrode 102. The protective layer 131 can be formed by methods such as vacuum deposition, sputtering, CVD, or ALD.

[0175] Next, the display device can be manufactured by bonding the sealing substrate 120 onto the protective layer 131 using the resin layer 122.

[0176] As described above, in the method for manufacturing a display device according to one aspect of the present invention, the island-shaped compound layers 103R, 103G, and 103B are formed not using a fine metal mask, but by processing after a film has been deposited on one surface, so that the island-shaped layers can be formed with a uniform thickness. This makes it possible to realize a high-definition display device or a display device with a high aperture ratio. Furthermore, even if the resolution or aperture ratio is high and the distance between light-emitting elements is extremely short, it is possible to suppress contact between the compound layers 103R, 103G, and 103B in adjacent light-emitting elements. Therefore, it is possible to suppress the generation of leakage current between light-emitting elements. This prevents crosstalk and makes it possible to realize a display device with extremely high contrast. Moreover, by performing the etching of the sacrificial film, mask film, sacrificial layer, and mask by wet etching using an aqueous solution containing phosphoric acid and hydrofluoric acid (preferably an aqueous solution containing phosphoric acid and hydrofluoric acid but not nitric acid), the occurrence of dark spots and shrinkage is suppressed, making it possible to provide a display device with good characteristics even for ultra-high-definition display devices.

[0177] Furthermore, even in display devices having tandem-type light-emitting devices fabricated using photolithography, it is possible to provide light-emitting devices and display devices that are excellent in moisture resistance, water resistance, oxygen resistance, and chemical resistance, have a low driving voltage, and have good luminous efficiency.

[0178] [Manufacturing Method Example 2] In Manufacturing Method Example 1 described above, only the drawing of the pixel portion is shown, but the connecting portion 140 shown in Figure 2B can also be manufactured in the same process.

[0179] Figure 11A shows a cross-sectional view of the process corresponding to Figure 2B, and is a cross-sectional view before the formation of the compound layer 115PD, the second electrode 102, and the protective layer 131. Furthermore, Figure 11B corresponds to a cross-sectional view immediately after the deposition of the compound layer 115PD.

[0180] As shown in Figures 11A and 11B, in order to reduce contact resistance, the second EL layer 105 and the compound layer 115PD are not deposited on the connection portion 140.

[0181] After obtaining the structure shown in Figure 11B, the second electrode 102 is deposited and the protective layer 131 is sputter-deposited to obtain the cross-sectional structure shown in Figure 2B.

[0182] Figure 11C shows a cross-sectional view in which the connection portion 140 is formed on the same substrate as the pixel portion. Conductive layer 152C is formed in the same process as conductive layer 152R, conductive layer 152G, and conductive layer 152B, and a common electrode 155 and protective layer 131 are formed on the insulating layer 127. The pixel portion is positioned so as not to overlap with the photodetector when viewed from above, and has a connection portion 140 between the common electrode 155 and the lower electrode layer (conductive layer 152C) between the pixel portion and the photodetector. The common electrode 155 is formed in contact with the insulating layer 158C. In this specification, the common electrode 155 has the same pattern as the second electrode 102, and the second electrode 102 located at the connection portion 140 is referred to as the common electrode 155.

[0183] Furthermore, the insulating layer 158C is formed in the same process as the insulating layers 158R, 158G, and 158B of the pixel portion.

[0184] Furthermore, when fabricating the light-receiving region 62PD shown in Figure 2B, the conductive layer 152PD is formed in the same process as the conductive layer 152R, conductive layer 152G, and conductive layer 152B, and the insulating layer 127 is formed. Then, an additional step is added to selectively form a compound layer 86PD containing an active layer using a vapor deposition mask. In a later step, a compound layer 105PD is formed using a different vapor deposition mask in a separate process from the second EL layer 105 of the pixel portion, and a common electrode 155 with the same pattern as the second electrode 102 of the pixel portion is formed, thereby fabricating the light-receiving region 62PD. A protective layer 131 is provided on the common electrode 155 to improve the reliability of the light-receiving element 62. In this specification, the common electrode 155 has the same pattern as the second electrode 102, and the region of the second electrode 102 located in the light-receiving region 62PD is referred to as the common electrode 155.

[0185] In this specification, the active layer refers to at least one layer included in the compound layer 86PD, and although the compound layer 105PD contributes to the photoelectric conversion of the photodetector, it is not referred to as the active layer. In this specification, the compound layer 105PD may be referred to as the first compound layer, and the second EL layer 105 may be referred to as the second compound layer.

[0186] Figure 11D shows a cross-sectional view in which the light-receiving region 62PD is also formed on the same substrate as the pixel portion by adding the deposition process of compound layers 105PD and 86PD formed on the insulating layer 127.

[0187] In Figure 11D, the pixel portion has a first insulating layer (insulating layers 158R, G, B) on the light-emitting layer, and a second insulating layer (insulating layer 127) on the first insulating layer (insulating layers 158R, G, B). The light-receiving region has a photodetector having an active layer (compound layer 86PD) between a third electrode (conductive layer 152PD) and a fourth electrode (common electrode 155). The light-receiving region has a third insulating layer (insulating layer 158PD) on the third electrode (conductive layer 152PD), a second insulating layer (insulating layer 127) on the third insulating layer (insulating layer 158PD), and an active layer (compound layer 86PD) on the second insulating layer (insulating layer 127). The photodetector has an electron transport layer on the third electrode (conductive layer 152PD), an active layer on the electron transport layer, and a hole transport layer on the active layer.

[0188] If a step is added to selectively form compound layer 105PD and compound layer 86PD using a vapor deposition mask, the photolithography process is not performed, thus minimizing the impact on other elements, specifically the pixel area.

[0189] Furthermore, when producing the light-emitting region 61IR shown in Figure 2C, the conductive layer 152IR is formed in the same process as the conductive layers 152R, 152G, and 152B, and the insulating layer 158IR and insulating layer 127 are formed. In the pixel area, insulating layers 158R, 158G, and 158B are formed on the light-emitting layer, covering the periphery of the light-emitting layer, and the insulating layer 127 is formed on the insulating layers 158R, 158G, and 158B. In the light-emitting region 61IR, an additional step is added to selectively form the compound layer 85IR, which will become the light-emitting layer, using a vapor deposition mask, and the compound layer 85IR is formed in contact with the insulating layer 158IR and insulating layer 127.

[0190] Furthermore, the insulating layer 158IR is formed in the same process as the insulating layers 158R, 158G, and 158B of the pixel portion.

[0191] In subsequent steps, a compound layer 105IR is formed using the same mask as the second EL layer 105 of the pixel portion, and a common electrode 155 is formed using the same mask as the second electrode 102 of the pixel portion, thereby creating the light-emitting region 61IR. A protective layer 131 is provided on the common electrode 155 to improve the reliability of the light-emitting element 61. In this specification, the common electrode 155 has the same pattern as the second electrode 102, and the second electrode 102 located in the light-emitting region 61IR is referred to as the common electrode 155.

[0192] If a step is added to selectively form the compound layer 85IR, which will become the light-emitting layer, using a vapor deposition mask, the photolithography process is not performed, thus minimizing the impact on other elements, specifically the pixel area.

[0193] In this specification, in the light-emitting region 61IR, the light-emitting layer that emits infrared light is referred to as the compound layer 85IR. This distinction is made to differentiate it from the light-emitting layer of the pixel portion, and although the emission wavelength is different, it can also be called a light-emitting layer.

[0194] The insulating layers 158R, G, B, and 158PD function as sacrificial layers that prevent short circuits between adjacent electrodes and protect the light-emitting layer of the pixel portion during the manufacturing process.

[0195] This embodiment can be freely combined with other embodiments.

[0196] (Embodiment 3) In Embodiment 1, an example was shown in which the overall shape of the pixel portion is rectangular, but it is not particularly limited. In this embodiment, the case in which the overall shape of the pixel portion is octagonal will be explained as an example.

[0197] Figure 12A shows a display device 70 in which an octagonal pixel section 95 is arranged, with a cathode contact 72R on one side and a cathode contact 72L on the other. Therefore, the pixel section 95 is positioned between the cathode contact 72R and the cathode contact 72L.

[0198] The dotted circle indicates the area that overlaps with the circular lens, and the octagonal pixel area 95 is slightly larger in area than the lens. Therefore, from the user's perspective, the area visible through the lens is the circular area that overlaps with the lens. The pixel area 95 is octagonal, and the light-emitting area is octagonal, but the area visible to one eye of the user is circular. Because the octagonal pixel area 95 creates space, as shown in Figure 12A, a light-receiving element 52 or an IR light-emitting element 53 can be placed in that space. This arrangement allows for effective use of the area other than the pixel area. By arranging multiple light-receiving elements in an array of X rows (X is a natural number) and Y columns (Y is a natural number), the user's eye can be imaged and used as an eye tracker.

[0199] Furthermore, the IR light-emitting element 53 is not limited to being manufactured on the same substrate as the pixel section, as shown in Figure 12A, but may also be configured as an external IR light-emitting element. In that case, as shown in Figure 12B, four light-receiving elements 52 may be arranged around the octagonal pixel section 95. In the case of the display device 80 shown in Figure 12B, an IR light-emitting element module is separately arranged so that IR light from the IR light-emitting element module is shone on the user's eye, and the reflected light is received by the four light-receiving elements 52. With the configuration of arranging the light-receiving elements 52 at four locations as shown in Figure 12B, it becomes possible to image the eye from four directions, improving the accuracy of the eye tracker.

[0200] Furthermore, this embodiment can be freely combined with other embodiments. For example, one or both of the display devices 100L and 100R of the electronic device 600 shown in Embodiment 1 can be used in the display device 70 shown in Figure 12A. Also, one or both of the display devices 100L and 100R of the electronic device 600 shown in Embodiment 1 can be used in the display device 80 shown in Figure 12B.

[0201] In this example, a light-receiving element was fabricated and its characteristics were measured. Figure 13 shows a schematic cross-sectional view of the element structure of the light-receiving element.

[0202] (Method for fabricating the photodetector 1) First, a film 402a was formed on a substrate 300 by sputtering a silver-palladium-copper alloy (APC: Ag-Pd-Cu) to a thickness of 100 nm, and then a film 402b was formed by further depositing a 10 nm thick film of indium tin oxide (ITO) containing silicon oxide. Subsequently, a reflective electrode 402 was formed by photolithography in a 2 mm x 2 mm area to have a pixel density of 500 ppi. The reflective electrode 402 is a stack of film 402a and film 402b.

[0203] Next, the substrate on which the reflective electrode 402 was formed was washed with water, baked at 200°C for 1 hour, and then subjected to UV ozone treatment for 370 seconds. −４ The substrate was introduced into a vacuum deposition apparatus where the internal pressure was reduced to approximately Pa, and vacuum firing was performed at 170°C for 30 minutes in the heating chamber of the vacuum deposition apparatus. After that, the substrate was allowed to cool for about 30 minutes.

[0204] Next, the substrate is fixed to a holder provided in the vacuum deposition apparatus so that the surface on which the reflective electrode 402 is formed faces downwards, and the material is deposited onto the reflective electrode 402 by a vapor deposition method. The structural formulas of the main compounds used in this embodiment are shown below.

[0205]

[0206] An electron transport layer 414 was formed on the reflective electrode 402 by depositing 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviated as mPPhen2P), represented by the above structural formula (i), to a thickness of 10 nm.

[0207] Next, on the electron transport layer 414, fullerene C represented by the above structural formula (ii) is added. ７０ A buffer layer 415 was formed with a film thickness of 20 nm.

[0208] The active layer 413 was formed on the buffer layer 415 to a thickness of 60 nm. The active layer 413 of the photodetector is made of fullerene C represented by the above structural formula (ii). ７０ And zinc phthalocyanine (ZnPc), represented by the above structural formula (iii), is used in a weight ratio of C ７０ The material was formed by co-deposition with a ratio of ZnPc = 0.7:0.3.

[0209] Next, N-(1,1'-biphenyl-4-yl)-9,9-dimethyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9H-fluoren-2-amine (abbreviated as PCBiF), represented by the above structural formula (iv), was deposited onto the active layer 413 to a thickness of 10 nm to form a hole transport layer 412.

[0210] Next, a molybdenum oxide film was deposited onto the hole transport layer 412 to a thickness of 60 nm to form a hole injection layer 411. The molybdenum oxide film reduces sputter damage from the sputtering process that is carried out later.

[0211] Subsequently, silver (Ag) and magnesium (Mg) were co-deposited in a volume ratio of 1:0.1 and with a film thickness of 10 nm to form an electrode layer 418 on the hole injection layer 411. The electrode layer 418 reduces sputter damage caused by the sputtering method performed later.

[0212] Furthermore, a 70 nm indium tin oxide (ITO) film is deposited on the electrode layer 418 as a protective layer 419 by sputtering to improve the light extraction efficiency.

[0213] Next, in a glove box under a nitrogen atmosphere, the photodetector was sealed with a glass substrate to prevent exposure to the atmosphere (applying a UV-curable sealant around the element, irradiating only the sealant with UV light without irradiating the photodetector, and heat-treating at 80°C for 1 hour under atmospheric pressure) to form the photodetector element 1.

[0214] The photodetector 1 corresponds to the stacked structure of the light-receiving region 62PD shown in Figure 2B. The stacked structure of the electron transport layer 414, buffer layer 415, active layer 413, and hole transport layer 412 shown in Figure 13 corresponds to the compound layer 86PD including the active layer shown in Figure 2B. The compound layer 115PD shown in Figure 2B corresponds to the hole injection layer 411 shown in Figure 13. The common electrode 155 shown in Figure 2B corresponds to the electrode layer 418 shown in Figure 13. The protective layer 131 shown in Figure 2B corresponds to the protective layer 419 shown in Figure 13.

[0215] Furthermore, the device structure of the photodetector 1 is shown in Table 1 below. This corresponds to the stacked structure shown in Figure 13 and is also called an inverted stacked structure. The inverted stacked structure only requires that at least an electron transport layer, an active layer, and a hole transport layer be formed in that order, and is not particularly limited to the number and type of stacks in this embodiment.

[0216]

[0217] <Current-Voltage Characteristics> Next, the current-voltage characteristics of the photodetector 1 were measured. The measurement was performed using monochromatic light with a wavelength of 800 nm and an irradiance of 12.5 μW / cm². ２The tests were performed both when the light was on (indicated as Photo) and in the dark (indicated as Dark). The current-voltage characteristics of the photodetector 1 are shown in Figure 14. In Figure 14, the horizontal axis represents voltage V and the vertical axis represents current density.

[0218] As shown in Figure 14, it was confirmed that the photodetector 1 exhibits a good saturation characteristic and an increase in current due to light irradiation. Therefore, the photodetector 1 can be suitably used as a photodetector for detecting light from an IR light-emitting element.

[0219] Figure 15 shows the wavelength dependence of the external quantum efficiency (EQE) of the photodetector 1. The EQE was calculated with a voltage of -2V and an irradiance of 12.5 μW / cm². ２ Measurements were taken at different wavelengths. In Figure 15, the horizontal axis represents wavelength λ, and the vertical axis represents EQE.

[0220] As shown in Figure 15, it was confirmed that the photodetector 1 has light detection sensitivity in the wavelength range of 375 nm to 900 nm. Therefore, the photodetector 1 can be suitably used as a photodetector for detecting light with a wavelength of 375 nm to 900 nm.

[0221] 10: Display system, 30: Drive circuit, 40: Function circuit, 52: Light-receiving element, 53: IR light-emitting element, 54: Sensor drive circuit, 55: IR light-emitting element drive circuit, 56: CPU, 57: Function circuit, 61: Light-emitting element, 61IR: Light-emitting area, 62: Light-receiving element, 62PD: Light-receiving area, 70: Display device, 71: Terminal, 72L: Cathode contact, 72R: Cathode contact, 80: Display device, 85IR: Compound layer, 86PD: Compound layer, 95: Pixel section, 96: Drive circuit, 100: Display device, 100L: Display device, 100R: Display device, 101: First electrode, 101 B: First electrode, 101f: Conductive film, 101G: First electrode, 101R: First electrode, 102: Second electrode, 103: Compound layer, 103B: Compound layer, 103Bf: Compound film, 103G: Compound layer, 103Gf: Compound film, 103R: Compound layer, 103Rf: Compound film, 104: First EL layer, 104B: First EL layer, 104G: First EL layer, 104R: First EL layer, 105: Second EL layer, 105IR: Compound layer, 105PD: Compound layer, 110: Sub-pixel, 110B: Sub-pixel, 110G: Sub-pixel, 110R: Sub-pixel, 115PD: Compound layer, 1 20: Encapsulation substrate, 122: Resin layer, 125: Inorganic insulating layer, 125f: Inorganic insulating film, 125IR: Sensor, 125T: Sensor, 127: Insulating layer, 127a: Insulating layer, 127f: Insulating film, 130B: Light-emitting element, 130G: Light-emitting element, 130R: Light-emitting element, 131: Protective layer, 140: Connection part, 140L: Cathode contact, 140R: Cathode contact, 151B: Conductive layer, 151f: Conductive layer, 151G: Conductive layer, 151R: Conductive layer, 152B: Conductive layer, 152C: Conductive layer, 152f: Conductive layer, 152G: Conductive layer, 152IR: Conductive layer, 152PD: Conductive layer Layers, 152R: conductive layer, 154: insulating layer, 154f: insulating film, 155: common electrode, 158B: insulating layer, 158Bf: sacrificial film, 158C: insulating layer, 158G: insulating layer, 158Gf: sacrificial film, 158IR: insulating layer, 158PD: insulating layer, 158R: insulating layer, 158Rf: sacrificial film, 159B: mask layer, 159Bf: mask film, 159G: mask layer, 159Gf: mask film, 159R: mask layer, 159Rf: mask film, 171: insulating layer, 172: conductive layer, 173: insulating layer, 174: insulating layer, 175: insulating layer, 176: wiring, 177: pixel area, 178: pixel,190B: Resist mask, 190G: Resist mask, 190R: Resist mask, 191: Resist mask, 230: Pixel, 230IR: Pixel, 300: Substrate, 402: Reflective electrode, 402a: Film, 402b: Film, 411: Hole injection layer, 412: Hole transport layer, 413: Active layer, 414: Electron transport layer, 415: Buffer layer, 418: Electrode layer, 419: Protective layer, 600: Electronic equipment, 601: Motion detection unit, 603: Calculation unit, 604: Communication unit, 605: Housing, 606: Mounting unit, 606A: Earphone, 607: Cushioning member, 608: Lens, 609: Input terminal, 610: Output terminal, 625: Sensor, 629: Imaging device,

Claims

An electronic device comprising a display device and an optical system, which is worn in front of the user's eyes, The display device has a pixel section and a light-receiving area on the same substrate. The pixel section has a plurality of light-emitting elements, each having a light-emitting layer between a first electrode and a second electrode. The light-receiving region has a light-receiving element, The light-receiving element has an electron transport layer on a third electrode, an active layer on the electron transport layer, a hole transport layer on the active layer, a compound layer on the hole transport layer, and a fourth electrode on the compound layer. Furthermore, a protective layer is provided on the second electrode and the fourth electrode. The active layer is an electronic device that receives infrared light that has passed through the protective layer, the fourth electrode, the hole transport layer, and the compound layer. 　 The electronic device according to claim 1, wherein the compound layer comprises molybdenum oxide. 　 The electronic device according to claim 1, wherein the direction in which a voltage is applied to the light-emitting layer and the direction in which a voltage is applied to the active layer are the same. 　 The electronic device according to claim 1, wherein the second electrode and the fourth electrode are made of a silver-magnesium alloy material, the second electrode and the fourth electrode are common electrodes, and the film thickness is 20 nm or less. 　 The electronic device according to claim 1, wherein the second electrode and the fourth electrode are made of a silver-magnesium alloy material, the thickness of the fourth electrode is thinner than that of the second electrode, and the thickness of the fourth electrode is 20 nm or less. 　 The electronic device according to claim 1, wherein a second compound layer is located on the light-emitting layer, the second compound layer is in contact with the second electrode, the light emitted from the light-emitting layer passes through the second compound layer and the second electrode and is perceived by the user's eye, and the second compound layer is made of a different material from the compound layer. 　 The electronic device according to claim 6, wherein the second compound layer comprises lithium fluoride. 　 The electronic device according to claim 1, wherein the protective layer is a transparent conductive film formed by a sputtering method. 　 The electronic device according to claim 1, wherein the light emitted from the light-emitting layer passes through the second electrode and is perceived by the user's eye.

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