Lapping Machines TRIZ Cases

Acoustic emission sensors detect mechanical vibrations in CMP apparatuses, predicting irregular motions to prevent wafer defects from over or under polishing.

Segmenting the support film over a peripheral part prevents slurry leakage while leaving a central recessed part open for precise endpoint detection.

A gas-mixed polishing slurry system dissolves oxygen or nitrogen into liquid to enhance material removal rates during chemical mechanical polishing.

Lift pins push substrates while fluid ejection reduces adhesion forces, enabling smooth detachment of large-area wafers without mechanical damage.

A polishing liquid storage mechanism retains fluid on the pad while a sensor measures its freshness to adjust supply conditions.

Adjusting substrate pressing forces based on film thickness measurements to enable accurate torque-based polishing end point detection.

A polishing apparatus regulates pad temperature to stabilize the chemical action of the polishing liquid during substrate planarization.

A polishing apparatus control device switches between polishing and cleaning solutions to flush flow channels.

Tracking spectral extrema at selected wavelengths detects the polishing endpoint while avoiding photocorrosion caused by harmful light exposure.

Dispensing steam into polishing liquid controls slurry temperature, improving wafer uniformity and reducing dishing.

A polyurethane polishing pad containing hollow polymeric particles creates a closed cell structure for semiconductor substrate processing.

Transparent polishing pad window with concave surface and drainage groove directs debris away from optical path.

Polishing pad maintains stable positive zeta potential independent of pH to improve planarization performance and productivity.

Pre-processing inserts via lapping and polishing reduces thickness variation, ensuring uniform wafer flatness during batch double-side polishing.

Shaped dressing boards refurbish dull semiconductor blades, resolving the trade-off between blade durability and substrate damage.

Independent pressing portions in the top ring adjust force based on effect rates to equalize the polishing profile across the wafer.

Cleaning liquid removes slurry from the optical sensor head, resolving film thickness measurement inaccuracies caused by reflected light intensity loss.

Interchangeable conditioning disks manage slurry and pad temperatures, reducing replacement frequency during chemical mechanical polishing.

A cylindrical roller with a polishing pad rotates to remove material from specific substrate regions.

Shearing force breaks slurry aggregates to prevent filter clogging and reduce processing time.

Removable storage media in the pneumatic control unit records pressure signals to detect deviations and reduce substrate damage risk.

A method determines film thickness by performing a Fourier transform on spectral waveforms of reflected light to extract frequency components.

Pre-heating both components eliminates thermal gradients that cause shock and prolong transient stages, stabilizing the material removal rate.

A polishing end point detection apparatus uses dual polarized lights at Brewster angles to analyze brightness and saturation changes.

A wafer grinding method uses integrated height recognition to adjust annular projection levels during processing.

A polishing method determines the endpoint by measuring the rate of change of torque during a static phase after oscillation.

A polishing method adjusts the endpoint offset based on real-time pad thickness measurements to control conductive film precision.

A recessed non-porous window in a polishing pad transmits signals for endpoint detection while preventing substrate scratching from material mismatches.

Dynamic rotational speed adjustment during multi-layer grinding resolves the contradiction between high grinding capability and production efficiency.

Optical slurry monitoring device measures abrasive particle size to prevent wafer scratches from aggregated particles during chemical mechanical polishing.

Fine bubble liquid stabilizes chemical mechanical polishing by reducing defects and extending pad life without increasing pressure.

A polishing apparatus calculates differences in eddy current measurement signals to detect the precise end point of metal film removal.

Segmented adhesive layers and barrier structures seal the endpoint detection window in CMP polishing pads.

Low peripheral speed and controlled slurry flow prevent thermal expansion and rapid wear, improving surface roughness and flatness.

Embedded microwave sensors measure substrate temperature through shielding polishing liquid to enable precise CMP control.

Mixed-height protruding members on a CMP pad conditioner restrict indentation depth to minimize surface roughness and prevent wafer scratches.

A wafer polishing apparatus switches between abrasive slurries of different grain sizes to remove surface roughness components.

X-ray monitoring measures metal thickness during chemical mechanical polishing to adjust process parameters.

Detecting substrate rotational orientation enables targeted hot spot treatment during chemical mechanical polishing, improving planarization uniformity.

A CMP retaining ring adjusts its position on the polishing pad to maintain a fixed step height relative to the membrane.

A scratch removal tool uses a DC brushless motor to drive a rotating shaft that positions a polishing pad within a shroud.

Sequential dispensing of distinct cleaning fluids removes dried residues from CMP surfaces, eliminating manual maintenance downtime.

A precision lapping device rotates a generatrix around a fixed axis to machine disk part cylindrical surfaces with ultra-high accuracy.

A double-side polishing method calculates processing time using center thickness and previous batch GBIR data to maintain target surface finish values.

Movable pins on a detecting module contact the polishing pad to identify bubbles and unevenness, preventing wafer cracking from improper planarization.

Concentric polishing-rate adjustment grooves deliver coolant or dilutant to reduce edge polishing speed, minimizing hot spots and uneven substrate surfaces.

A vacuum substrate support unit holds wafers during polishing and lifts them for cleaning using magnetic repulsion.

Dynamic pressure regulation matches attachment forces, preventing physical stress and substrate breakage during release.

Segmenting liquid streams via a switching device prevents slurry adhesion in long discharge lines, reducing pure water consumption.