Solid-State Devices TRIZ Cases

Side contact grinding removes wafer material while eliminating vertical pressure that breaks low-k films during thickness adjustment.

An optical member with reactive mesogen reduces diffuse reflection caused by the micro lens array, improving luminance.

Segmented routing wiring with varying bending radii accommodates mechanical stress in flexible organic light emitting display substrates.

Diketopyrrolopyrrole polymers maintain coplanarity and reduce steric hindrance to overcome oxygen sensitivity in organic thin film transistors.

Storing hole charges along word line fringes expands the second bit operation window and reduces interference in charge trapping memory devices.

A semiconductor light emitting device uses a recessed reflector and highly conductive material to enhance light emission efficiency.

A quantum dot display panel integrates light sensing layers to adjust brightness automatically.

Switchable dummy metal pads reduce ambient light reflection, resolving the trade-off between improved contrast and added structural complexity.

Plasma-enhanced chemical vapor deposition deposits an oxide liner on through-silicon vias at low temperatures.

A lateral silicon-on-insulator bipolar junction transistor detects radiation exposure through charge trapping in its buried insulator layer.

Lead-containing glass absorbs harmful X-rays while transmitting visible light, protecting semiconductor channel layers from deterioration.

Variable intervals between column portions improve metal film embeddability near slits, reducing void formation and enhancing memory cell yield.

An etch stop material layer enables selective anisotropic etching for precise inter-tier memory openings in 3D NAND structures.

Common mode noise suppression capacitors reduce interference in galvanic isolation systems, enhancing transient immunity and communication reliability.

A semiconductor gate structure uses appendages and a mandrel to maintain consistent spacing between large patterns and fine gate lines.

Segmented resistance cell arrays reduce current consumption during high-speed sum-of-products operations by activating only necessary computation blocks.

Stacked transparent conductive oxide layers enhance electrode reflectance and work function in light-emitting elements.

A cutting apparatus uses a curved stage portion to create an inclined cut surface on the substrate.

An adsorptive and reactive layer captures moisture and oxygen before they degrade the organic photoelectric conversion layer, improving manufacturing yield.

Parallel processing units and three-row electric contacts minimize fabrication variations and reduce wire bonding skew angles to prevent short circuits.

A charge pump circuit adjusts capacitor charging current via a supply current control means to match load demand.

A metal oxide semiconductor fabrication method merges gate, lightly doped drain, and source/drain electrode definition into single photolithography steps.

A semiconductor circuit uses trigger signals to manage electric charge discharge.

Electric fields align micro-light-emitting diodes within substrate grooves, resolving assembly precision challenges while maintaining compact device volume.

Alternating width side sealant segments distribute mechanical loads to prevent delamination and cracking during rolling or folding operations.

Segmented silicon nitride charge trapping regions reduce inter-level diffusion and retention loss while maintaining high storage density.

Morphotropic phase boundary lead zirconate titanate enables multiple polarization states, increasing spatial density of memory cells.

Segmented magnetic tunneling junction stacks with asymmetric pinned and free layers reduce chip area while enhancing temperature stability.

Nanoparticles embedded in the pixel definition film redirect wave-guided light, resolving side color shifts and boosting OLED light efficiency.

A touch organic light-emitting display device uses bridges to connect mesh electrodes across a bank insulation film.

Prioritized charge flow paths in a photosite reduce bulk and power consumption while maintaining sampling capability for indirect time-of-flight sensors.

Buffer circuit isolates high-capacitance global bit lines from sense amplifiers, maintaining signal precision and read speed during Giga-bit density scaling.

Asymmetric color control layers in a two-way OLED display convert white light into full color images for front and side viewing, reducing manufacturing complexity.

A recess channel transistor employs a vertical silicon-on-insulator structure to enhance the effective channel area.

A display device uses a planarization layer with a higher refractive index than total reflection layers to redirect light.

Cross-linkable monomers form stable nanoparticles in hole transport layers, maintaining layer integrity during sequential deposition.

A micro light emitting element uses a specific slope and layered metal films to redirect emitted light outward from the emission layer.

Etched metal conductor portions protect unetched segments during MEMS plasma fabrication to maintain CMOS electrical connectivity.