The invention provides a
crucible guide die structure for growing an extra-thick monocrystal
alumina wafer. The
crucible guide die structure has the advantages of capacity of growing 8 to 18-mm type extra-thick monocrystal
alumina wafers, simple die core structure of each crystallizer, capacity of controlling and adjusting the
temperature gradient of
crystallization table-board wafers, and guarantee of no bubbles, no growth striations, low
internal stress, difficult
cracking and high qualification rate of
crystal finished products. The
crucible guide die structure comprises a crucible, wherein the crucible is arranged in a heater through a grip; the heater is arranged in an
electrode plate; a
thermal insulation screen is arranged outside the heater; the crystallizers are arranged in the crucible; a
seed crystal is arranged above the
crystallization table-board of each crystallizer; the
seed crystal is connected with a
seed crystal coupling sleeve through a connection structure; the crucible has a cuboid shape or a rectangular strip shape with two arc ends; the crystallizers are arranged along the
central line of the length direction of the crucible sequentially; and the heater has a cuboid shape or a rectangular strip shape with two arc ends. The crucible guide die structure is characterized in that: each crystallizer comprises a die core; the die core comprises two inversed L-shaped
molybdenum plates; the end parts of the two inversed L-shaped
molybdenum plates are hermetically welded with each other; and the two inversed L-shaped
molybdenum plates are in symmetrical
rivet weld connection with each other through a molybdenum rod.